JP4431908B2 - Sputtering cathode and sputtering apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a sputtering apparatus for forming a thin film on a substrate by sputtering, and more particularly to an improvement in a sputtering cathode that functions a target.
[0002]
[Prior art]
The sputtering cathode in the sputtering apparatus is an indispensable element in the magnetron sputtering method in which a substantially parallel magnetic field component is formed on the target and the electric field and the magnetic field are almost orthogonal. A permanent magnet is installed on the back side of the target, and the magnet is magnetized in a direction perpendicular to the target surface.
[0003]
In such a magnet arrangement configuration, the region of the lines of magnetic force parallel to the target surface is narrow, and there has been a limit to the rate of stable discharge and the film formation on the substrate. In addition, if the region of the lines of magnetic force parallel to the target surface is narrow, the erosion (target erosion) region is eventually narrowed. Therefore, the use efficiency of the target is lowered and the manufacturing cost is increased.
[0004]
[Problems to be solved by the invention]
In the conventional sputtering cathode, in order to widen the region of the lines of magnetic force parallel to the target surface, a larger magnet may be provided and the interval between the inner and outer magnets may be increased.
[0005]
However, if the requirements of the above configuration are followed, the cathode becomes large, resulting in high cost of the sputtering apparatus. Moreover, since the weight of the cathode increases, the maintainability is deteriorated, which is not preferable.
[0006]
The present invention has been made in consideration of the above circumstances, and the problem is that a large area of magnetic lines of force parallel to the target surface can be secured without increasing the size of the cathode, thereby improving the utilization efficiency of the target. Another object of the present invention is to provide a sputtering cathode and a sputtering apparatus capable of forming a film with high uniformity and high speed in a large area with high efficiency.
[0007]
[Means for Solving the Problems]
In order to solve such a problem, in the present invention, a cylindrical outer peripheral magnet disposed so as to face the magnetic pole end surface facing the target, and the magnetic pole end surface facing the target inside the outer peripheral magnet. A configuration having a cylindrical inner circumferential magnet arranged so as to face each other is specified as a basic configuration.
[0008]
In addition, about claim 1,
(A) The inner peripheral magnet is a single columnar magnet, and the magnetic pole end surface is inclined so as to go away from the target as it goes inward toward the center as seen from the outer magnet,
(B) The outer peripheral magnet is composed of a plurality of magnets arranged at the outer circumferential position, and is inclined so as to move away from the target as the magnetic pole end surface moves outward as viewed from the inner peripheral magnet.
Identify points.
[0009]
Regarding claim 2,
(A) The inner circumference magnet has the same configuration as (a) of the second feature point,
(B) The outer peripheral magnet is different in that the second feature point (b) is composed of “a plurality of magnets”, whereas the outer magnet is composed of “one ring-shaped magnet”.
Identify points.
[0010]
Further about claim 3,
(A) The inner circumferential magnet includes a third portion in which a plurality of round magnets are stacked at an inner circumferential position, and a fourth portion in which a plurality of round magnets are stacked at an outer circumferential position. And the distance between the pole end surface of the inner third portion and the target surface is greater than the outer fourth portion,
(B) The outer peripheral magnet includes a first portion in which a plurality of round magnets are stacked at an inner circumferential position, and a second portion in which a plurality of round magnets are stacked at an outer circumferential position; And the distance between the pole end surface of the outer second portion and the target surface is larger than the inner first portion.
Identify points.
[0011]
Furthermore, about claim 4,
(A) Instead of the inner peripheral magnet having a configuration in which the fourth feature point (a) “stacks a plurality of round magnets”, “a plurality of magnets at inner and outer inner peripheral positions” With a configuration of
(B) The outer peripheral magnet has the same configuration as (b) of the fourth feature point.
Identify points.
[0013]
According to the present invention, a cylindrical outer peripheral magnet is provided at a circumferential position on the outer side of the cylindrical inner peripheral magnet, and a surface or a step that inclines inward so as to spread the magnetic lines of force passing through the target in the inner peripheral magnet. In addition, a surface of the magnetic pole end that forms the outer surface of the outer peripheral magnet and a surface of the magnetic pole end that forms a step so as to spread outward can be provided. Thus, a compact sputtering cathode can be realized.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a cross-sectional view showing the main configuration of a sputtering apparatus including a sputtering cathode according to the first embodiment of the present invention. The cathode housing 6 in the cathode 1 is in contact with the insulating plate 7 through an O-ring 12 and is attached to the vacuum vessel 2 through an O-ring 14. Bolts 16 used for attaching the cathode 1 and the vacuum vessel 2 are fixed via an insulating collar 9 so as not to contact the cathode housing 6.
[0015]
The vacuum vessel 2 is exhausted by a vacuum exhaust system (not shown). Further, the sputtering gas supplied by the gas supply means is introduced through the gas introduction port GIN. A substrate holder 3 is disposed in the vacuum vessel 2 at a position facing the target 4 attached to the cathode 1.
[0016]
A target 4 bonded to a backing plate 5 via an O-ring 12 is attached to the cathode 1. An earth shield 8 is disposed on the side surface of the target 4. The substrate holder 3 in the vacuum vessel 2 has a substrate holding means (not shown), whereby a substrate (not shown) is held.
[0017]
An inner peripheral magnet 10 and an outer peripheral magnet 11 are disposed on the back surface of the target 4. The bolt 16 is a ground potential, and a negative voltage is applied to the bolt 15 by a direct current (not shown). Thereby, plasma is generated near the surface of the target 4 and the sputtering gas is ionized. Since the ionized sputtering gas is directed to the cathode 1 biased at a negative potential and collides with the surface of the target 4, particles (target material) are ejected from the target surface. The ejected particles are deposited on a substrate (not shown) on the substrate holder 3.
[0018]
Further, cooling water flows in a space formed by the backing plate 5 in contact with the cathode housing 6 via the O-ring 12 to cool the target 4 being sputtered.
[0019]
The feature of the present invention in the first embodiment is the arrangement configuration of the inner circumference magnet 10 and the outer circumference magnet 11 arranged in the cathode housing 6. The inner peripheral magnet 10 has a magnetic pole end surface inclined toward the inner periphery, and the outer peripheral magnet 11 has a magnetic pole end surface inclined toward the outer periphery. Hereinafter, the sputtering cathode having the inner peripheral magnet 10 and the outer peripheral magnet 11 will be described.
[0020]
FIG. 2 is an enlarged view of the cathode 1 of FIG. 1, showing the main part of the sputtering cathode of the present invention. On the back surface of the target 4 and the backing plate 5, a plurality of cylindrical inner peripheral magnets 10 are arranged on the circumference, and a plurality of cylindrical outer peripheral magnets 11 are inclined on the outer side.
[0021]
Lines of magnetic force 18 due to the inner peripheral magnet 10 and the outer peripheral magnet 11 pass through the surface of the target 4. The ionized sputtering gas collides with the surface of the target 4 at the portion where the magnetic force lines 18 are parallel to the surface of the target 4, and particles jump out of the target 4.
[0022]
In the first embodiment, the inner peripheral magnet 10 is attached to the magnet mounting plate 17 while the inner peripheral magnet 10 is inclined inward and the outer peripheral magnet 11 is inclined outward. That is, the arrangement configuration of the inner circumferential magnet 10 and the outer circumferential magnet 11 is realized by the magnet mounting plate 17 itself being inclined at a predetermined angle from a plane parallel to the target 4. The magnet mounting plate 17 is attached to the cathode housing 6 by bolts 19.
[0023]
The magnetic pole end surfaces of the inner peripheral magnet 10 and the outer peripheral magnet 11 have opposite polarities. The magnetic field lines 18 exit from the inner peripheral magnet 10, spread once, exit the surface of the target 4, expand again, and proceed toward the outer peripheral magnet 11.
[0024]
According to the embodiment, since the inner and outer peripheral magnets 10 and 11 are arranged to be inclined, the lines of magnetic force spread and leak to the surface of the target 4, so that a wide erosion region can be taken. That is, the utilization efficiency of the target 4 is improved.
[0025]
Furthermore, by arranging the inner and outer peripheral magnets 10 and 11 to be inclined, a region parallel to the target 4 of the magnetic lines of force leaking to the surface of the target 4 can be widely taken. For this reason, stable discharge becomes possible. Therefore, it contributes to the high speed and reliability of film formation. Thereby, the film can be formed at high speed with high uniformity in a large area with high efficiency.
[0026]
Furthermore, there is an advantage that a magnet portion necessary for obtaining an erosion region similar to the conventional one can be reduced. For this reason, a more compact cathode can be manufactured, and cost can be reduced.
[0027]
FIG. 3 is a cross-sectional view showing the main part of the sputtering cathode showing the second embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals. Each of the inner peripheral magnet 10Q and the outer peripheral magnet 11Q has a surface in which each magnetic pole end surface itself is inclined at a predetermined angle from a plane parallel to the target 4, so that each magnetic pole end surface is inclined inward and outer in the inner peripheral magnet 10Q. The magnet 11Q is inclined outward.
[0028]
That is, for each of the inner and outer peripheral magnets, the magnetic pole end closer to the target is slanted, and the magnetic pole end farther from the target is parallel to the target. A plurality of inner circumference magnets 10Q and outer circumference magnets 11Q are arranged on the circumference of the magnet mounting plate 17F on the parallel magnetic pole surfaces. The magnet mounting plate 17F is also parallel to the target and is mounted on the cathode housing 6.
[0029]
The magnetic pole end surfaces of the inner peripheral magnet 10Q and the outer peripheral magnet 11Q have opposite polarities. The magnetic field line 18 exits from the inner circumferential magnet 10Q, spreads once, exits the surface of the target 4, spreads again, and proceeds toward the outer circumferential magnet 11Q.
[0030]
The effect similar to 1st Embodiment is acquired also by the said embodiment. That is, by tilting the magnetic pole end surfaces of the inner and outer peripheral magnets 10Q and 11Q, the magnetic lines of force spread and leak to the surface of the target 4, so that a wide erosion region can be taken. That is, the utilization efficiency of the target 4 is improved.
[0031]
Further, by inclining the magnetic pole end surfaces of the inner and outer peripheral magnets 10Q and 11Q, a region parallel to the target 4 of the lines of magnetic force leaking to the surface of the target 4 can be widened. For this reason, stable discharge becomes possible. Therefore, it contributes to the high speed and reliability of film formation. Thereby, the film can be formed at high speed with high uniformity in a large area with high efficiency.
[0032]
Furthermore, there is an advantage that a magnet portion necessary for obtaining an erosion region similar to the conventional one can be reduced. For this reason, a more compact cathode can be manufactured, and cost can be reduced.
[0033]
FIG. 4 is a cross-sectional view showing the main part of the sputtering cathode showing the third embodiment of the present invention. The same parts as those in the second embodiment are denoted by the same reference numerals. The form of the inner peripheral magnet 10R is different from that of the second embodiment. The inner circumferential magnet 10R is formed of a single columnar (for example, a cylinder) having a surface inclined inward toward the center. Others are the same as in the second embodiment.
[0034]
Also here, the surfaces of the magnetic pole end portions of the inner peripheral magnet 10R and the outer peripheral magnet 11Q have opposite polarities. The magnetic field line 18 exits from the inner peripheral magnet 10R, once expands, exits the surface of the target 4, and then expands again toward the outer peripheral magnet 11Q.
[0035]
According to such a configuration, the second embodiment requires a plurality of inner peripheral magnets 10Q, but is replaced with a single magnet called an inner peripheral magnet 10R. Thereby, the installation area of an inner peripheral magnet becomes smaller than 2nd Embodiment.
[0036]
The third embodiment can provide the same effects as those of the first and second embodiments. That is, by tilting the magnetic pole end surfaces of the inner and outer magnets 10R and 11Q, the lines of magnetic force spread and leak to the surface of the target 4, so that a wide erosion region can be taken. That is, the utilization efficiency of the target 4 is improved.
[0037]
Furthermore, by inclining the magnetic pole end surfaces of the inner and outer peripheral magnets 10R and 11Q, a region parallel to the target 4 of the lines of magnetic force leaking to the surface of the target 4 can be widened. For this reason, stable discharge becomes possible. Therefore, it contributes to the high speed and reliability of film formation.
[0038]
Furthermore, there is an advantage that a magnet portion necessary for obtaining an erosion region similar to the conventional one can be reduced. In particular, since the inner peripheral magnet 10R is composed of a single columnar body, a more compact cathode can be manufactured and the cost can be reduced.
[0039]
Although not particularly illustrated, as a modified example, at least one of the inner peripheral magnet 10 (10Q) and the outer peripheral magnet 11 (11Q) is annular (ring shape, cylindrical shape) as a modification example. Even if the magnet is a single magnet (that is, both the inner and outer magnets are ring-shaped (cylindrical)), the present invention can be carried out and is within the scope of the present invention.
[0040]
FIG. 5 is a cross-sectional view showing the main configuration of a sputtering apparatus including a sputtering cathode according to the fourth embodiment of the present invention. The same parts as those in the first embodiment shown in FIG. The cathode housing 6 in the cathode 1 is in contact with the insulating plate 7 through an O-ring 12 and is attached to the vacuum vessel 2 through an O-ring 14. Bolts 16 used for attaching the cathode 1 and the vacuum vessel 2 are fixed via an insulating collar 9 so as not to contact the cathode housing 6.
[0041]
The vacuum vessel 2 is exhausted by a vacuum exhaust system (not shown). Further, the sputtering gas supplied by the gas supply means is introduced through the gas introduction port GIN. A substrate holder 3 is disposed in the vacuum vessel 2 at a position facing the target 4 attached to the cathode 1.
[0042]
A target 4 bonded to a backing plate 5 via an O-ring 12 is attached to the cathode 1. An earth shield 8 is disposed on the side surface of the target 4. The substrate holder 3 in the vacuum vessel 2 has a substrate holding means (not shown), whereby a substrate (not shown) is held.
[0043]
An inner peripheral magnet 20 and an inner and outer peripheral magnet 21 are arranged on the back surface of the target 4. The bolt 16 is a ground potential, and a negative voltage is applied to the bolt 15 by a direct current (not shown). Thereby, plasma is generated near the surface of the target 4 and the sputtering gas is ionized. Since the ionized sputtering gas is directed to the cathode 1 biased at a negative potential and collides with the surface of the target 4, particles (target material) are ejected from the target surface. The ejected particles are deposited on a substrate (not shown) on the substrate holder 3.
[0044]
Further, cooling water flows in a space formed by the backing plate 5 in contact with the cathode housing 6 via the O-ring 12 to cool the target 4 being sputtered.
[0045]
The feature of the present invention in the fourth embodiment is the arrangement configuration of the inner circumference magnet 20 and the outer circumference magnet 21 arranged in the cathode housing 6. The inner peripheral magnet 20 is configured to be double-wrapped, and the outer peripheral magnet 21 is also configured to be double-wrapped. Hereinafter, the sputtering cathode having the inner peripheral magnet 20 and the outer peripheral magnet 21 will be described.
[0046]
FIG. 6 is an enlarged view of the cathode 1 of FIG. 5, showing the main part of the sputtering cathode of the present invention. On the back surface of the target 4 and the backing plate 5, a magnet attachment plate 17 </ b> F is attached to the cathode housing 6 with bolts 19. A cylindrical inner peripheral magnet 20A and an outer peripheral magnet 21A are disposed on the magnet mounting plate 17F. A cylindrical magnet 20B having a magnetic pole end portion that is further away from the target 4 than the inner peripheral magnet 20A is disposed on the inner periphery of the inner peripheral magnet 20A. Further, on the outer periphery of the outer peripheral magnet 21A, a cylindrical magnet 21B having a magnetic pole end separated from the target 4 than the outer peripheral magnet 21A is disposed.
[0047]
A plurality of the four types of magnets are arranged on each circumference. Further, in order to fix the four types of magnets to the magnet mounting plate 17F, they are each mounted in a case. That is, a mold is made of resin or the like and a magnet is inserted. Also, a method of attaching with a bolt using a perforated magnet is conceivable. The magnet attachment plate 17F is attached to the cathode housing 6 by bolts 19.
[0048]
Lines of magnetic force 18 by the inner peripheral magnet 20 and the outer peripheral magnet 21 pass through the surface of the target 4. The ionized sputtering gas collides with the surface of the target 4 at the portion where the magnetic force lines 18 are parallel to the surface of the target 4, and particles jump out of the target 4.
[0049]
In the fourth embodiment, the inner magnet 20 provided closer to the inner side has a larger separation distance between the surface of the magnetic pole end and the target 4 (20B), and the outer peripheral magnet 21 provided closer to the outer side has a larger magnetic pole end. The separation distance between the part surface and the target 4 is increased (21B).
[0050]
The magnetic pole end surfaces of the inner peripheral magnet 20 and the outer peripheral magnet 21 have opposite polarities. The magnetic field line 18 exits from the inner circumferential magnet 20Q, spreads once, exits the surface of the target 4, spreads again, and proceeds toward the outer circumferential magnet 11Q.
[0051]
According to the above embodiment, the magnets 20 and 21 on the inner and outer circumferences are provided in duplicate, and the magnetic pole ends are arranged with a step, so that the lines of magnetic force spread and leak to the surface of the target 4, so that a wide erosion region can be taken. . That is, the utilization efficiency of the target 4 is improved.
[0052]
Furthermore, the magnets 20 and 21 on the inner and outer circumferences are provided in duplicate, and the magnetic pole ends are provided with a step, so that a wide region of the lines of magnetic force leaking to the surface of the target 4 can be taken. For this reason, stable discharge becomes possible. Therefore, it contributes to the high speed and reliability of film formation. Thereby, the film can be formed at high speed with high uniformity in a large area with high efficiency.
[0053]
Furthermore, there is an advantage that a magnet portion necessary for obtaining an erosion region similar to the conventional one can be reduced. For this reason, a more compact cathode can be manufactured, and cost can be reduced.
[0054]
FIG. 7 is a cross-sectional view showing the main part of the sputtering cathode showing the fifth embodiment of the present invention. The same parts as those in the fourth embodiment are denoted by the same reference numerals. Each of the inner circumferential magnet 20 and the outer circumferential magnet 21 is double or more, for example, each has three rows (triple), and each of the three rows has a step so that a large parallel region of the magnetic force lines 18 can be taken as in the fourth embodiment. Has been placed.
[0055]
That is, the inner magnet 20 is set to have a larger separation distance between the surface of the magnetic pole end and the target 4 as it is provided on the inner side such as 20C → 20D → 20E. And the outer peripheral side magnet 21 is set to have a larger distance between the surface of the magnetic pole end and the target 4 as it is provided on the outer side, such as 21C → 21D → 21E.
[0056]
The inner peripheral magnet 20 (20C, 20D, 20E) and the outer peripheral magnet 21 (21C, 21D, 21E) have opposite polarities on the surfaces of the magnetic pole ends. The magnetic field line 18 exits from the inner circumferential magnet 20, spreads once, exits the surface of the target 4, spreads again, and proceeds toward the outer circumferential magnet 21.
[0057]
According to the above embodiment, the magnets 20 and 21 on the inner and outer circumferences are provided more than double, and are arranged with a fine step at the magnetic pole end, thereby increasing the magnetic force and spreading the magnetic lines of force on the surface of the target 4. Since it leaks, the erosion area can be widened. That is, the utilization efficiency of the target 4 is improved.
[0058]
Furthermore, by providing the inner and outer magnets 20 and 21 more than double and arranging them with a fine step at the magnetic pole end, a wide area of the lines of magnetic force leaking to the surface of the target 4 can be taken. For this reason, stable discharge becomes possible. Therefore, it contributes to the high speed and reliability of film formation. Thereby, the film can be formed at high speed with high uniformity in a large area with high efficiency.
[0059]
Furthermore, there is an advantage that a magnet portion necessary for obtaining an erosion region similar to the conventional one can be reduced. For this reason, a more compact cathode can be manufactured, and cost can be reduced.
[0060]
FIG. 8 is a cross-sectional view showing the main part of the sputtering cathode according to the sixth embodiment of the present invention. This embodiment is a modification of the fourth and fifth embodiments, and is given the same reference numerals. The inner peripheral magnets 20 are arranged in two rows (20A, 20B) as in FIG. 6, and the outer peripheral magnets 21 are arranged in three rows (21C, 21D, 21E) as in FIG.
[0061]
FIG. 9 is a cross-sectional view showing the main part of the sputtering cathode according to the seventh embodiment of the present invention. This embodiment is a modification of the fourth and fifth embodiments, and is given the same reference numerals. The inner circumference magnets 20 are arranged in three rows (20C, 20D, 20E) as in FIG. 7, and the outer circumference magnets 21 are arranged in two rows (21A, 21B) as in FIG.
[0062]
These sixth and seventh embodiments also have the same effects as the configurations shown in the fourth and fifth embodiments. That is, the erosion area in the target 4 is widened, and the utilization efficiency of the target 4 is improved. Furthermore, it contributes to the improvement of the deposition rate on the substrate. In addition, since a large area parallel to the target 4 can be taken, stable discharge is possible, which contributes to the improvement of film formation reliability. Furthermore, since the magnet portion necessary for obtaining the same erosion region as that of the prior art can be reduced, a compact cathode can be manufactured at a lower cost.
[0063]
FIG. 10 is a cross-sectional view showing the main part of the sputtering cathode showing the eighth embodiment of the present invention. The same parts as those in the fourth embodiment are denoted by the same reference numerals. Regarding the inner peripheral magnet 20 and the outer peripheral magnet 21, each of the inner peripheral magnets is doubled, and the inner peripheral magnet provided on the inner side has a larger separation distance between the magnetic pole end surface and the target 4 (20G), and the outer peripheral side provided on the outer side. Although the distance between the surface of the magnetic pole end and the target 4 is greater for a magnet (21G), it is the same as in the fourth embodiment, but the configuration of the magnet is characteristic.
[0064]
In this embodiment, the inner peripheral magnets 20F and 20G and the outer peripheral magnets 21F and 21G have a configuration in which round magnets 30 and 31 are stacked so as to approach the target 4, respectively. The magnets 30 and 31 are arranged with opposite polarities, and the end portions of the magnetic poles are configured to have opposite polarities with inner / outer magnets. That is, a mold is made of resin and a round magnet is inserted. Thereby, the magnetic force increase by stacking is aimed at.
[0065]
FIG. 11 is a cross-sectional view showing the main part of the sputtering cathode showing the ninth embodiment of the present invention. This is a modification in which the fourth embodiment is applied to the inner peripheral magnet 20 and the eighth embodiment is applied to the outer peripheral magnet 21. As described above, at least one of the inner peripheral side magnet and the outer peripheral side magnet may have a configuration in which round magnets are stacked so as to approach the target 4. Of course, the magnetic pole ends are configured to have opposite polarities in the inner / outer peripheral magnets.
[0066]
As described above, according to each embodiment, by providing the sputtering apparatus with a sputtering cathode as shown in each embodiment, the lines of magnetic force leaking to the surface of the target 4 are widened, a wide area parallel to the target 4 can be taken, and the erosion area is Can be widely taken. Therefore, while reducing the size and cost of the cathode, the utilization efficiency of the target 4 can be improved, the deposition rate on the substrate can be improved, and stable discharge can be obtained, so that the reliability of the deposition can be expected.
[0067]
【The invention's effect】
As described above, according to the present invention, the inner / outer peripheral magnets in the cathode on the back surface of the target are unique so that the magnetic lines of force are widened so that a region parallel to the target surface can be widened and the erosion region can be widened. By adopting the arrangement and configuration, it is possible to perform high-speed film formation with high uniformity and high uniformity in a large area area while realizing improvement in target utilization efficiency, improvement in film formation rate on the substrate, stable discharge, etc. A highly reliable sputtering cathode and sputtering apparatus that are more compact and low-cost can be provided.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a main configuration of a sputtering apparatus including a sputtering cathode according to a first embodiment of the present invention.
FIG. 2 is an enlarged view of the cathode in FIG. 1, showing the main part of the sputtering cathode of the present invention.
FIG. 3 is a cross-sectional view showing a main part of a sputtering cathode showing a second embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a main part of a sputtering cathode showing a third embodiment of the present invention.
FIG. 5 is a cross-sectional view showing the main configuration of a sputtering apparatus including a sputtering cathode according to a fourth embodiment of the present invention.
6 is an enlarged view of the cathode of FIG. 5, showing the main part of the sputtering cathode of the present invention.
FIG. 7 is a cross-sectional view showing a main part of a sputtering cathode showing a fifth embodiment of the present invention.
FIG. 8 is a cross-sectional view showing a main part of a sputtering cathode showing a sixth embodiment of the present invention.
FIG. 9 is a cross-sectional view showing a main part of a sputtering cathode showing a seventh embodiment of the present invention.
FIG. 10 is a cross-sectional view showing a main part of a sputtering cathode showing an eighth embodiment of the present invention.
FIG. 11 is a cross-sectional view showing a main part of a sputtering cathode according to a ninth embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Cathode, 2 ... Vacuum container, 3 ... Substrate holder, 4 ... Target, 5 ... Backing plate, 6 ... Cathode housing, 7 ... Insulating plate, 8 ... Earth shield, 9 ... Insulating collar, 10, 20 ... Outer magnet Reference numerals 11, 21, ... inner peripheral magnets, 12, 13, 14 ... O-rings, 15, 16, 19 ... bolts, 18 ... lines of magnetic force.

Claims (5)

A cylindrical outer magnet arranged so that the surface of the magnetic pole end faces the target;
A cylindrical inner peripheral magnet disposed inside the outer peripheral magnet so that the surface of the magnetic pole end faces the target;
With
The outer peripheral magnet is provided with a plurality of magnets that are inclined so as to go away from the target as the surface of the magnetic pole end portion goes outward as viewed from the inner peripheral magnet,
The inner peripheral magnet is a single columnar magnet that is inclined so as to move away from the target as the surface of the magnetic pole end portion goes inward toward the center as viewed from the outer peripheral magnet.
A sputtering cathode characterized by that . A cylindrical outer magnet arranged so that the surface of the magnetic pole end faces the target;
A cylindrical inner peripheral magnet disposed inside the outer peripheral magnet so that the surface of the magnetic pole end faces the target;
With
The outer peripheral magnet is provided with one ring-shaped magnet that is inclined so as to go away from the target as the surface of the magnetic pole end portion moves outward as viewed from the inner peripheral magnet, at the outer circumferential position,
The inner peripheral magnet is a single columnar magnet that is inclined so as to move away from the target as the surface of the magnetic pole end portion goes inward toward the center as viewed from the outer peripheral magnet.
A sputtering cathode characterized by that . A cylindrical outer magnet arranged so that the surface of the magnet end faces the target;
A cylindrical inner peripheral magnet disposed inside the outer peripheral magnet so that the surface of the magnetic pole end faces the target;
With
In the outer magnet, a plurality of round magnets are stacked at inner circumferential positions so as to approach the target, and a plurality of round magnets are disposed at outer circumferential positions of the first part. A second portion formed by stacking magnets so as to approach the target, and the distance between the surface of the magnetic pole end facing the target of the second portion and the surface of the target is the first portion. Greater than the distance between the surface of the pole tip surface facing the target of the portion and the surface of the target,
The above inner magnet has a plurality of round magnets stacked at inner circumferential positions so as to approach a target, and a plurality of round magnets at outer circumferential positions of the third part. The fourth portion is formed by stacking the magnets so as to approach the target, and the distance between the surface of the magnetic pole end portion facing the target of the third portion and the surface of the target is the fourth portion. Greater than the distance between the surface of the magnetic pole end facing the target and the surface of the target
A sputtering cathode characterized by that . A cylindrical outer magnet arranged so that the surface of the magnet end faces the target;
A cylindrical inner peripheral magnet disposed inside the outer peripheral magnet so that the surface of the magnetic pole end faces the target;
With
In the outer magnet, a plurality of round magnets are stacked at inner circumferential positions so as to approach the target, and a plurality of round magnets are disposed at outer circumferential positions of the first part. A second portion formed by stacking magnets so as to approach the target, and the distance between the surface of the magnetic pole end facing the target of the second portion and the surface of the target is the first portion. Greater than the distance between the surface of the pole tip surface facing the target of the portion and the surface of the target,
The inner circumferential magnet includes a third portion in which a plurality of magnets are disposed at an inner circumferential position, and a fourth portion in which a plurality of magnets are disposed at an outer circumferential position of the third portion. The distance between the surface of the magnetic pole end portion facing the target of the third portion and the surface of the target of the third portion is that of the surface of the extreme portion facing the target of the fourth portion. Greater than the distance between the target surface
A sputtering cathode characterized by that . A sputtering apparatus comprising the sputtering cathode according to claim 1 .

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