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JP4550503B2 - Semiconductor device - Google Patents
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JP4550503B2 - Semiconductor device - Google Patents

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JP4550503B2
JP4550503B2 JP2004214136A JP2004214136A JP4550503B2 JP 4550503 B2 JP4550503 B2 JP 4550503B2 JP 2004214136 A JP2004214136 A JP 2004214136A JP 2004214136 A JP2004214136 A JP 2004214136A JP 4550503 B2 JP4550503 B2 JP 4550503B2
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electrode
end side
adhesive member
convex portion
conductive adhesive
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JP2006040928A (en
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聡 今井
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W99/00—Subject matter not provided for in other groups of this subclass
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    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01308—Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
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    • H10W72/071—Connecting or disconnecting
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    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
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    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
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    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07651—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
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    • H10W72/07651—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
    • H10W72/07653—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting changes in shapes
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    • H10W72/381—Auxiliary members
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
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    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
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    • H10W72/874—On different surfaces
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Die Bonding (AREA)

Description

この発明は、半導体チップ上の電極およびパッケージ外部に露出されたリードの間をフレームで接続する半導体装置に関する。   The present invention relates to a semiconductor device for connecting an electrode on a semiconductor chip and a lead exposed outside the package with a frame.

従来、半導体チップ上の電極およびリードの間の接続は、金やアルミニウムのワイヤを用いたワイヤボンディングにより行われていた。ワイヤと半導体チップ上の電極との接合およびワイヤとリードとの接合は、接続する金属をお互いに加圧し、超音波振動または熱を加え、もしくはその両方を与えて接合することにより行われる。   Conventionally, connection between electrodes and leads on a semiconductor chip has been performed by wire bonding using gold or aluminum wires. The bonding between the wire and the electrode on the semiconductor chip and the bonding between the wire and the lead are performed by pressing the metals to be connected to each other and applying ultrasonic vibration or heat, or both, and bonding.

一方、ワイヤによる接続では電気抵抗が高く、効率的な電気接続が行えていなかった。このため、ワイヤに替えて例えばクリップ状のフレームを用いて低抵抗の電気接続を得ていた。
例えば、半導体チップ（半導体ペレット）上の電極とリードとを接続する半導体パッケージ用接続導体として、帯状をなす銅または銅合金箔からなる導電性フレーム（クリップフレーム）を用いた半導体パッケージが記載されている。また、クリップフレームと半導体チップ上の電極との接合およびクリップフレームとリードとの接合に、導電性接着部材が用いられていた（例えば、特許文献１参照）。
特開２００１−２７４２０６号公報（図１、図２） On the other hand, the electrical connection is high in the connection by the wire, and the efficient electrical connection cannot be performed. For this reason, a low-resistance electrical connection is obtained by using, for example, a clip-shaped frame instead of the wire.
For example, a semiconductor package using a conductive frame (clip frame) made of copper or copper alloy foil in a band shape is described as a semiconductor package connection conductor for connecting an electrode on a semiconductor chip (semiconductor pellet) and a lead. Yes. In addition, a conductive adhesive member has been used for joining the clip frame and the electrode on the semiconductor chip and joining the clip frame and the lead (for example, see Patent Document 1).
JP 2001-274206 A (FIGS. 1 and 2)

しかしながら、従来の半導体装置では、半導体チップ上の電極に設けられた導電性接着部材（例えば、Ａｇペースト）に対して、クリップフレームを圧着したときに、導電性接着部材が半導体チップ上の電極領域から外れ、半導体チップ表面上に広がり、その結果、Ａｇマイグレーションが生じ、クリップフレームと半導体チップの電極間の接合部分の抵抗値等の電気特性が変わってしまい、半導体装置の品質低下を招いていた。   However, in the conventional semiconductor device, when the clip frame is pressure-bonded to the conductive adhesive member (for example, Ag paste) provided on the electrode on the semiconductor chip, the conductive adhesive member becomes the electrode region on the semiconductor chip. As a result, Ag migration occurs, resulting in a change in electrical characteristics such as a resistance value of a joint portion between the clip frame and the semiconductor chip electrode, resulting in deterioration of the quality of the semiconductor device. .

また、半導体チップ上に複数の電極が互いに隣接して配置されていた場合、クリップフレームの圧着によって導電性接着部材が横に広がってしまうことにより、電極間の距離が狭くなり、電極間でショートしてしまうおそれがあった。また、半導体チップおよびクリップフレームは導電性接着部材を挟んでパッケージされるが、導電性接着部材が半導体チップの表面上に広がることにより、導電性接着部材が露出してしまう。この導電性接着部材は、金属導体である半導体チップやクリップフレームと比較して、パッケージの樹脂材との密着力が小さいため、例えば、半導体装置にリフロー等の熱処理を施した場合、半導体チップとパッケージ樹脂との界面で樹脂の剥離が生じ、この部分で耐湿性劣化が生じていた。   In addition, when a plurality of electrodes are arranged adjacent to each other on the semiconductor chip, the conductive adhesive member spreads laterally due to the crimping of the clip frame, thereby reducing the distance between the electrodes and shorting between the electrodes. There was a risk of doing so. Further, although the semiconductor chip and the clip frame are packaged with the conductive adhesive member interposed therebetween, the conductive adhesive member is exposed when the conductive adhesive member spreads on the surface of the semiconductor chip. Since this conductive adhesive member has less adhesive force with the resin material of the package than a semiconductor chip or clip frame that is a metal conductor, for example, when a heat treatment such as reflow is applied to a semiconductor device, The resin peeled off at the interface with the package resin, and the moisture resistance deteriorated at this portion.

この発明は、このような問題点を解決するためになされたものであり、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる半導体装置を提供することを目的とする。   The present invention has been made to solve such a problem, and suppresses the conductive adhesive member between the electrode on the semiconductor chip and the conductive frame from spreading, and the electric power due to the migration of Ag or the like. It is an object of the present invention to provide a semiconductor device capable of preventing a change in characteristics and preventing peeling of a package.

本発明に係る半導体装置は、半導体チップが樹脂材料のパッケージによって固定された半導体装置であって、上記半導体チップの表面上に設けられた電極、上記半導体チップの表面上であって、上記電極の外周に設けられた凸部、上記パッケージによって固定され、上記パッケージの外部に一端側が露出されたリード、一端側が該リードの他端側に接続し、他端側が上記電極に接続し、上記リードおよび上記電極の間を電気接続する導電性フレーム、およびこの導電性フレームの他端側および上記電極間であって、上記凸部に囲まれた領域に導電性接着部材を有し、上記凸部の高さは、上記凸部に囲まれた領域の体積が、上記電極および上記導電性接着部材の体積の和に相当するように形成され、上記凸部は、上記電極と同一部材で形成されていることを特徴とするものである。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
A semiconductor device according to the present invention is a semiconductor device in which a semiconductor chip is fixed by a package of a resin material, the electrode provided on the surface of the semiconductor chip, the surface of the semiconductor chip, A convex portion provided on the outer periphery, a lead fixed by the package and having one end exposed to the outside of the package, one end connected to the other end of the lead, the other end connected to the electrode, the lead and A conductive frame that electrically connects the electrodes; and a conductive adhesive member in a region surrounded by the convex portion between the other end side of the conductive frame and the electrode, and the convex portion The height is formed such that the volume of the region surrounded by the convex portion corresponds to the sum of the volumes of the electrode and the conductive adhesive member, and the convex portion is formed of the same member as the electrode. It is characterized in that there.
With such a configuration, the conductive adhesive member between the electrode on the semiconductor chip and the conductive frame is prevented from spreading, and the change in electrical characteristics due to migration of Ag or the like can be prevented, and the peeling of the package can be prevented. can do.

また、導電性接着部材は、導電性フレームの他端側および電極間で圧着されて、上記導電性フレームの他端側および上記電極間を、凸部に囲まれた領域で接着するようにしてもよい。   Further, the conductive adhesive member is pressure-bonded between the other end side of the conductive frame and the electrode so as to bond the other end side of the conductive frame and the electrode in a region surrounded by the convex portion. Also good.

また、導電性接着部材は、銀ペーストで形成されてもよい。   Moreover, the conductive adhesive member may be formed of a silver paste.

半導体チップの表面上の凸部とは別の凸部が、リードの他端側に、上記リードの他端側および導電性フレームの一端側の間の接続領域を四方で囲って設けられ、導電性フレームの一端側および上記リードの他端側の間であって、上記別の凸部に囲われた領域に導電性接着部材を更に有してもよい。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材に加え、更にリードおよび導電性フレームの間の導電性接着部材が、広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。 A convex portion different from the convex portion on the surface of the semiconductor chip is provided on the other end side of the lead so as to surround the connection region between the other end side of the lead and the one end side of the conductive frame in four directions. A conductive adhesive member may be further provided in a region between one end side of the conductive frame and the other end side of the lead and surrounded by the another convex portion.
With such a configuration, in addition to the conductive adhesive member between the electrode on the semiconductor chip and the conductive frame, the conductive adhesive member between the lead and the conductive frame is further prevented from spreading, such as Ag. Changes in electrical characteristics due to migration can be prevented, and peeling of the package can be prevented.

この発明により、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる半導体装置を提供することができる。   According to the present invention, it is possible to prevent the conductive adhesive member between the electrode on the semiconductor chip and the conductive frame from spreading, to prevent a change in electrical characteristics due to migration of Ag or the like, and to prevent peeling of the package. A semiconductor device capable of achieving the above can be provided.

発明の実施の形態１．
本発明の実施の形態１について、図に基づいて説明する。
図１は、本発明の実施の形態１にかかる半導体装置の構成および製造工程を示す図である。
図１（ａ）において、ダイパッド１の周囲には複数のリード２Ａ、２Ｂが設けられている。ダイパッド１の表面上に、例えば銀ペーストにより形成されたゲル状の導電性接着部材３Ａをディスペンサによって塗布する。なお、導電性接着部材３Ａは、ゲル状のものではなく、シート状のものを用いて構わない。なお、リード２Ａ、２Ｂは、後述のパッケージによって固定され、パッケージの外部に一端側が露出される。 Embodiment 1 of the Invention
Embodiment 1 of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram illustrating the configuration and manufacturing process of the semiconductor device according to the first embodiment of the present invention.
In FIG. 1A, a plurality of leads 2 </ b> A and 2 </ b> B are provided around the die pad 1. On the surface of the die pad 1, for example, a gel-like conductive adhesive member 3A formed of silver paste is applied by a dispenser. The conductive adhesive member 3A may be a sheet-like member instead of a gel-like member. The leads 2A and 2B are fixed by a package described later, and one end side is exposed to the outside of the package.

次に、図１（ｂ）において、半導体チップ４を、塗布された導電性接着部材３Ａによってダイパッド１上に固定する。半導体チップ４の表面上には、例えばアルミニウムやアルミニウム合金からなる電極５Ａ、５Ｂが設けられている。次に、電極５Ｂの外周に凸部６を電極５Ｂの高さよりも高く設ける。   Next, in FIG. 1B, the semiconductor chip 4 is fixed on the die pad 1 by the applied conductive adhesive member 3A. On the surface of the semiconductor chip 4, electrodes 5A and 5B made of, for example, aluminum or an aluminum alloy are provided. Next, the convex part 6 is provided in the outer periphery of the electrode 5B higher than the height of the electrode 5B.

次に、図１（ｃ）において、例えばゲル状の導電性接着部材３Ｂ、３Ｃを、ディスペンサによって、リード２Ｂの他端側および電極５Ｂの表面上に塗布する。導電性接着部材３Ｃは、凸部６に囲まれた領域内に設けられる。好ましくは、凸部６に囲まれた領域の体積が、電極５Ｂおよび導電性接着部材３Ｃの体積の和に相当するようにする。このように凸部６の高さを設定すれば、後述のように、導電性接着部材３Ｃが電極５Ｂ及び導電性フレーム８の他端側の間で圧着されたとき、導電性接着部材３Ｃが凸部６に囲われた領域外に広がらない。   Next, in FIG. 1C, for example, gel-like conductive adhesive members 3B and 3C are applied onto the other end of the lead 2B and the surface of the electrode 5B by a dispenser. The conductive adhesive member 3 </ b> C is provided in a region surrounded by the convex portion 6. Preferably, the volume of the region surrounded by the protrusions 6 corresponds to the sum of the volumes of the electrode 5B and the conductive adhesive member 3C. If the height of the convex portion 6 is set in this way, as will be described later, when the conductive adhesive member 3C is crimped between the electrode 5B and the other end side of the conductive frame 8, the conductive adhesive member 3C It does not spread outside the region surrounded by the convex portion 6.

次に、図１（ｄ）において、電極５Ａおよびリード２Ａ間を例えば金のワイヤ７を用い、ワイヤボンディングによって電気接続する。また、電極５Ｂおよびリード２Ｂの間を、帯板状の銅または銅合金箔等からなる導電性フレーム８で電気接続する。具体的には、導電性フレーム８の一端側はリード２Ｂの他端側に接続し、導電性フレーム８の他端側は電極５Ｂに接続し、リード２Ｂおよび電極５Ｂの間を電気接続する。また、このとき、導電性接着部材３Ｃは、導電性フレーム８の他端側および電極５Ｂ間であって、凸部６に囲まれた領域に設けられている。また、導電性接着部材３Ｃは、導電性フレーム８の他端および電極５Ｂ間で圧着されて、導電性フレーム８の他端側および電極５Ｂの間を凸部６に囲まれた領域で接着している。このとき、凸部６に囲まれた領域の体積が、電極５Ｂおよび導電性接着部材３Ｃの体積の和に相当するようにされているので、導電性接着部材３Ｃが電極５Ｂ及び導電性フレーム８の他端側の間で圧着されたとき、導電性接着部材３Ｃが凸部６に囲われた領域外に広がらない。   Next, in FIG. 1D, the electrode 5A and the lead 2A are electrically connected by wire bonding using, for example, a gold wire 7. Further, the electrode 5B and the lead 2B are electrically connected by a conductive frame 8 made of a strip-like copper or copper alloy foil or the like. Specifically, one end side of the conductive frame 8 is connected to the other end side of the lead 2B, the other end side of the conductive frame 8 is connected to the electrode 5B, and the lead 2B and the electrode 5B are electrically connected. At this time, the conductive adhesive member 3 </ b> C is provided between the other end of the conductive frame 8 and the electrode 5 </ b> B and in a region surrounded by the convex portion 6. In addition, the conductive adhesive member 3C is pressure-bonded between the other end of the conductive frame 8 and the electrode 5B, and adheres between the other end side of the conductive frame 8 and the electrode 5B in a region surrounded by the convex portion 6. ing. At this time, since the volume of the region surrounded by the convex portion 6 corresponds to the sum of the volumes of the electrode 5B and the conductive adhesive member 3C, the conductive adhesive member 3C becomes the electrode 5B and the conductive frame 8. When the pressure bonding is performed between the other end sides, the conductive adhesive member 3 </ b> C does not spread outside the region surrounded by the protrusions 6.

次に、図１（ｅ）において、半導体チップ４等の部材を樹脂材料のパッケージ９によって、パッケージ９の外部にリード２Ａ、２Ｂの一端側が露出されるように固定する。
このような製造工程を経て、本発明の実施の形態１に係る半導体装置を得ることができる。
すなわち、本発明の実施の形態１に係る半導体装置は、半導体チップ４が樹脂材料のパッケージ９によって固定された半導体装置であって、半導体チップ４の表面上に設けられた電極５Ｂ、半導体チップ４の表面上であって、電極５Ｂの外周に設けられた凸部６、パッケージ９によって固定され、パッケージ９の外部に一端側が露出されたリード２Ｂ、一端側がリード２Ｂの他端側に接続し、他端側が電極５Ｂに接続し、リード２Ｂおよび電極５Ｂの間を電気接続する導電性フレーム８、および導電性フレーム８の他端側および電極５Ｂ間であって、凸部６に囲まれた領域に導電性接着部材３Ｃを有している。 Next, in FIG. 1E, a member such as the semiconductor chip 4 is fixed by a resin material package 9 so that one end sides of the leads 2A and 2B are exposed to the outside of the package 9.
Through such a manufacturing process, the semiconductor device according to Embodiment 1 of the present invention can be obtained.
That is, the semiconductor device according to the first embodiment of the present invention is a semiconductor device in which the semiconductor chip 4 is fixed by the package 9 made of a resin material, and includes the electrode 5B provided on the surface of the semiconductor chip 4, the semiconductor chip 4 A lead 2B which is fixed by a convex portion 6 provided on the outer periphery of the electrode 5B and the package 9 and has one end exposed to the outside of the package 9, and one end connected to the other end of the lead 2B, The conductive frame 8 having the other end connected to the electrode 5B and electrically connecting the lead 2B and the electrode 5B, and the region surrounded by the protrusion 6 between the other end of the conductive frame 8 and the electrode 5B 3C has a conductive adhesive member 3C.

このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
また、更に、導電性接着部材が半導体チップ表面上に広がらないように抑制することにより、半導体チップ４上で電極５Ｂとこれに隣接する電極５Ａとのショートを防止することができる。 With such a configuration, the conductive adhesive member between the electrode on the semiconductor chip and the conductive frame is prevented from spreading, and the change in electrical characteristics due to migration of Ag or the like can be prevented, and the peeling of the package can be prevented. can do.
Further, by suppressing the conductive adhesive member from spreading on the surface of the semiconductor chip, it is possible to prevent a short circuit between the electrode 5B and the electrode 5A adjacent thereto on the semiconductor chip 4.

また、凸部６の高さを、凸部６に囲まれた領域の体積が電極５Ｂおよび導電性接着部材３Ｃの体積の和に相当するように形成すれば、導電性接着部材３Ｃが電極５Ｂ及び導電性フレーム８の他端側の間で圧着されたとき、凸部６および導電性接着部材３Ｃの表面の高さが略同一となり、導電性接着部材３Ｃが電極５Ｂおよび導電性フレーム８の他端側の間を確実に電気接続しながら、導電性接着部材３Ｃが凸部６に囲われた領域外に広がらないように抑制できる。   Further, if the height of the convex portion 6 is formed so that the volume of the region surrounded by the convex portion 6 corresponds to the sum of the volumes of the electrode 5B and the conductive adhesive member 3C, the conductive adhesive member 3C becomes the electrode 5B. And the height of the surfaces of the convex portion 6 and the conductive adhesive member 3C are substantially the same, and the conductive adhesive member 3C is formed between the electrode 5B and the conductive frame 8. It is possible to prevent the conductive adhesive member 3 </ b> C from spreading outside the region surrounded by the convex portion 6 while securely connecting the other end side.

また、凸部６は、電極５Ｂと同一部材で形成されてもよく、これにより、製造工程の短縮化を図ることができる。   Moreover, the convex part 6 may be formed with the same member as the electrode 5B, and, thereby, a manufacturing process can be shortened.

発明の実施の形態２．
本発明の実施の形態２について、図に基づいて説明する。
図２は、本発明の実施の形態２にかかる半導体装置の構成および製造工程を示す図である。
図２（ａ）〜（ｅ）において、図１（ａ）〜（ｅ）と相違する部分について、説明する。すなわち、図２（ｂ）において、図１（ｂ）で電極５Ｂの外周に設けるのと同様に、リード２Ｂの他端側にも、リード２Ｂの他端側および導電性フレーム８の一端側の間の接続領域を四方で囲って凸部６Ａを更に設ける。次に、図２（ｃ）において、ゲル状の導電性接着部材３Ｄをディスペンサによって塗布する。次に、図２（ｄ）において、導電性フレーム８の一端側を、導電性接着部材３Ｄを介してリード２Ｂに、他端側を、導電性接着部材３Ｃを介して電極５Ｂに接続する。
このような製造工程を経て、本発明の実施の形態２に係る半導体装置を得ることができる。 Embodiment 2 of the Invention
A second embodiment of the present invention will be described with reference to the drawings.
FIG. 2 is a diagram illustrating the configuration and manufacturing process of the semiconductor device according to the second embodiment of the present invention.
2 (a) to 2 (e), portions different from those in FIGS. 1 (a) to 1 (e) will be described. That is, in FIG. 2B, the other end side of the lead 2B and the other end side of the lead 2B and the one end side of the conductive frame 8 are provided on the other end side of the lead 2B in the same manner as provided on the outer periphery of the electrode 5B in FIG. A convex portion 6A is further provided by surrounding the connecting area between the four sides. Next, in FIG. 2C, a gel-like conductive adhesive member 3D is applied by a dispenser. Next, in FIG. 2D, one end side of the conductive frame 8 is connected to the lead 2B via the conductive adhesive member 3D, and the other end side is connected to the electrode 5B via the conductive adhesive member 3C.
Through such a manufacturing process, the semiconductor device according to Embodiment 2 of the present invention can be obtained.

すなわち、本発明の実施の形態２に係る半導体装置は、半導体チップ４の表面上の凸部６とは別の凸部６Ａが、リード２Ｂの他端側に、リード２Ｂの他端側および導電性フレーム８の一端側の間の接続領域を四方で囲って設けられ、導電性フレーム８の一端側およびリード２Ｂの他端側の間であって、別の凸部６Ａに囲われた領域に導電性接着部材３Ｄを更に有するものである。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材に加え、更にリードおよび導電性フレームの間の導電性接着部材が、広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。 That is, in the semiconductor device according to the second embodiment of the present invention, the convex portion 6A different from the convex portion 6 on the surface of the semiconductor chip 4 has the other end side of the lead 2B and the conductive portion on the other end side of the lead 2B. A connection region between one end sides of the conductive frame 8 is provided to be surrounded by four sides, and is provided between one end side of the conductive frame 8 and the other end side of the lead 2B and is surrounded by another convex portion 6A. It further has a conductive adhesive member 3D.
With such a configuration, in addition to the conductive adhesive member between the electrode on the semiconductor chip and the conductive frame, the conductive adhesive member between the lead and the conductive frame is further prevented from spreading, such as Ag. Changes in electrical characteristics due to migration can be prevented, and peeling of the package can be prevented.

本発明の実施の形態１にかかる半導体装置の構成および製造工程を示す図である。It is a figure which shows the structure and manufacturing process of the semiconductor device concerning Embodiment 1 of this invention. 本発明の実施の形態２にかかる半導体装置の構成および製造工程を示す図である。It is a figure which shows the structure and manufacturing process of the semiconductor device concerning Embodiment 2 of this invention.

符号の説明Explanation of symbols

１ ダイパッド、 ２Ａ、２Ｂ リード、 ３Ａ、３Ｂ、３Ｃ、３Ｄ 導電性接着部材、 ４ 半導体チップ、 ５Ａ、５Ｂ 電極、 ６、６Ａ 凸部、７ ワイヤ、 ８導電性フレーム、 ９ パッケージ。   1 die pad, 2A, 2B lead, 3A, 3B, 3C, 3D conductive adhesive member, 4 semiconductor chip, 5A, 5B electrode, 6, 6A convex portion, 7 wire, 8 conductive frame, 9 package.

Claims (4)

半導体チップが樹脂材料のパッケージによって固定された半導体装置であって、
上記半導体チップの表面上に設けられた電極、
上記半導体チップの表面上であって、上記電極の外周に設けられた凸部、
上記パッケージによって固定され、上記パッケージの外部に一端側が露出されたリード、
一端側が該リードの他端側に接続し、他端側が上記電極に接続し、上記リードおよび上
記電極の間を電気接続する導電性フレーム、
および
この導電性フレームの他端側および上記電極間であって、上記凸部に囲まれた領域に導
電性接着部材を有し、
上記凸部の高さは、上記凸部に囲まれた領域の体積が、上記電極および上記導電性接着部材の体積の和に相当するように形成され、
上記凸部は、上記電極と同一部材で形成されていることを特徴とする半導体装置。 A semiconductor device in which a semiconductor chip is fixed by a resin material package,
Electrodes provided on the surface of the semiconductor chip,
On the surface of the semiconductor chip, a protrusion provided on the outer periphery of the electrode,
A lead fixed by the package and having one end exposed to the outside of the package;
One end side is connected to the other end side of the lead, the other end side is connected to the electrode, and a conductive frame electrically connecting the lead and the electrode,
And a between the other end and the electrode of the conductive frame, it has a conductive adhesive member in a region surrounded by the convex portion,
The height of the convex portion is formed so that the volume of the region surrounded by the convex portion corresponds to the sum of the volumes of the electrode and the conductive adhesive member,
The semiconductor device is characterized in that the convex portion is formed of the same member as the electrode . 導電性接着部材は、導電性フレームの他端側および電極間で圧着されて、上記導電性フレームの他端側および上記電極間を、凸部に囲まれた領域で接着することを特徴とする請求項１に記載の半導体装置。   The conductive adhesive member is pressure-bonded between the other end side of the conductive frame and the electrode, and bonds the other end side of the conductive frame and the electrode in a region surrounded by a convex portion. The semiconductor device according to claim 1. 導電性接着部材は、銀ペーストで形成されたことを特徴とする請求項１又は２に記載の半導装置。 Conductive adhesive member, semiconductor device according to claim 1 or 2, characterized in that it is formed of silver paste. 半導体チップの表面上の凸部とは別の凸部が、リードの他端側に、上記リードの他端側および導電性フレームの一端側の間の接続領域を四方で囲って設けられ、
導電性フレームの一端側および上記リードの他端側の間であって、上記別の凸部に囲われた領域に導電性接着部材を更に有することを特徴とする請求項１〜３のいずれか１項に記載の半導体装置。 A convex portion different from the convex portion on the surface of the semiconductor chip is provided on the other end side of the lead so as to surround the connection region between the other end side of the lead and the one end side of the conductive frame in four directions,
4. The method according to claim 1, further comprising a conductive adhesive member in a region between one end side of the conductive frame and the other end side of the lead and surrounded by the another convex portion . 2. A semiconductor device according to item 1 .
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