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JP4552552B2 - Semiconductor device - Google Patents
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JP4552552B2 - Semiconductor device - Google Patents

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JP4552552B2
JP4552552B2 JP2004214070A JP2004214070A JP4552552B2 JP 4552552 B2 JP4552552 B2 JP 4552552B2 JP 2004214070 A JP2004214070 A JP 2004214070A JP 2004214070 A JP2004214070 A JP 2004214070A JP 4552552 B2 JP4552552 B2 JP 4552552B2
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substrate
resist film
electrodes
semiconductor device
width
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JP2006040924A (en
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正美 小原
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires

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Description

本発明は、基板の両端部にそれぞれ電極が設けられた表面実装型の半導体装置に関する。   The present invention relates to a surface-mount type semiconductor device in which electrodes are provided at both ends of a substrate.

表面実装型の半導体装置は、基板に搭載された半導体素子と、この基板の両端部に設けられた一対の電極とを有している。この半導体装置は、リフロー工程で他の基板へ実装する際に、基板の実装面の両端部に形成された電極同士が半田などで短絡しないように、実装面側の電極間にレジスト膜が設けられている。   A surface-mount type semiconductor device has a semiconductor element mounted on a substrate and a pair of electrodes provided at both ends of the substrate. This semiconductor device is provided with a resist film between the electrodes on the mounting surface side so that the electrodes formed at both ends of the mounting surface of the substrate are not short-circuited by solder or the like when mounted on another substrate in the reflow process. It has been.

従来の半導体装置を図2に示す。図2(a)は従来の半導体装置の半導体素子の搭載面側の図、(b)は実装面側の図である。   A conventional semiconductor device is shown in FIG. FIG. 2A is a diagram on the mounting surface side of a semiconductor element of a conventional semiconductor device, and FIG. 2B is a diagram on the mounting surface side.

図2(a)および同図(b)に示すように、従来の半導体装置10は、発光ダイオード11が基板12に搭載されており、基板12の実装面側の両端部に形成された断面コ字状の電極13,14の2つの突出部15に重なるように、レジスト膜16が設けられている。このようにレジスト膜16を設けることで、他の基板に搭載する際に、電極13,14を短絡するように半田が付着することを防止している。なお、図示の例では、レジスト膜16の外形をダイオードの回路記号を模した形状に形成して、部品の極性を容易に判別することができるようにしている。   As shown in FIG. 2A and FIG. 2B, the conventional semiconductor device 10 includes a light emitting diode 11 mounted on a substrate 12 and cross-sections formed at both end portions on the mounting surface side of the substrate 12. A resist film 16 is provided so as to overlap the two protruding portions 15 of the letter-shaped electrodes 13 and 14. Providing the resist film 16 in this way prevents solder from adhering so as to short-circuit the electrodes 13 and 14 when mounted on another substrate. In the illustrated example, the outer shape of the resist film 16 is formed to resemble the circuit symbol of the diode so that the polarity of the component can be easily determined.

また、図3に他の従来の半導体装置を示す。図3は他の従来の半導体装置の底面図である。   FIG. 3 shows another conventional semiconductor device. FIG. 3 is a bottom view of another conventional semiconductor device.

図3に示すように、他の従来の半導体装置20は、基板21の実装面側の両端部に形成された略T字状に形成された電極22に重ならないように、また電極23に重なるようにレジスト膜24が設けられている。レジスト膜24の外形を電極22側と電極23側で異なるものとすることで、この従来の半導体装置の極性を表している。このようなレジスト膜が形成された半導体装置が特許文献1に記載されている。
特開2001−352102号公報
As shown in FIG. 3, another conventional semiconductor device 20 overlaps the electrode 23 so as not to overlap the substantially T-shaped electrodes 22 formed at both ends on the mounting surface side of the substrate 21. Thus, a resist film 24 is provided. By making the outer shape of the resist film 24 different between the electrode 22 side and the electrode 23 side, the polarity of this conventional semiconductor device is represented. A semiconductor device in which such a resist film is formed is described in Patent Document 1.
JP 2001-352102 A

しかし、図2(a)および同図(b)に示される従来の半導体装置は、他の基板へ実装する工程にて、基板12が撓むような応力がかかり、基板12の短手方向に割れが発生したり、基板12に形成された配線パターンの剥離が生じたりすることがある。これは、基板12の撓みに対して、基板12の強度が耐えられないからである。図2(b)に示される従来の半導体装置10の基板12の実装面側には、基板12の長手方向の撓みを抑止する効果があると思われる電極13と電極14と、この電極13,14のそれぞれの突出部15を接続するレジスト膜16とが設けられているが、これではまだ基板12の割れや、配線パターンの剥離などを防止するには、強度不足である。   However, the conventional semiconductor device shown in FIGS. 2A and 2B is subjected to a stress that causes the substrate 12 to be bent in the process of mounting on another substrate, and cracks in the short direction of the substrate 12. May occur or the wiring pattern formed on the substrate 12 may be peeled off. This is because the strength of the substrate 12 cannot withstand the bending of the substrate 12. On the mounting surface side of the substrate 12 of the conventional semiconductor device 10 shown in FIG. 2 (b), an electrode 13 and an electrode 14, which are considered to have an effect of suppressing the bending of the substrate 12 in the longitudinal direction, 14 is provided with a resist film 16 that connects each of the projecting portions 15, but this is still insufficient to prevent cracking of the substrate 12 and peeling of the wiring pattern.

図3に示される特許文献1に記載の半導体装置20のレジスト膜24は、電極23には重なっているが、電極22には重なっていないため、基板21の長手方向の撓みに対する強度は、図2に示される従来の半導体装置より弱いものと思われる。   Since the resist film 24 of the semiconductor device 20 described in Patent Document 1 shown in FIG. 3 overlaps the electrode 23 but does not overlap the electrode 22, the strength against bending of the substrate 21 in the longitudinal direction is as shown in FIG. It seems to be weaker than the conventional semiconductor device shown in FIG.

このように従来の半導体装置を他の基板へ実装する工程にて、基板の割れや配線パターンの剥離が発生すると、半導体素子が正常に動作しないこともあるため、半導体装置は不良品として扱われることとなる。撓みの応力に対する強度の高い基板を採用することも考えられるが、基板のコストアップになる。   In this way, when a conventional semiconductor device is mounted on another substrate, if the substrate is cracked or the wiring pattern is peeled off, the semiconductor element may not operate normally, so the semiconductor device is treated as a defective product. It will be. Although it is conceivable to employ a substrate having a high strength against the bending stress, the cost of the substrate increases.

そこで本発明は、基板のコストをアップさせることなく、基板の撓み強度を向上させて不良の発生を抑止することが可能な半導体装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a semiconductor device capable of suppressing the occurrence of defects by improving the flexural strength of the substrate without increasing the cost of the substrate.

本発明は、矩形状に形成された基板に半導体素子を搭載した表面実装型の半導体装置において、前記基板の両端部に断面がコ字状に形成された一対の電極と、前記半導体素子を搭載した搭載面の反対面に、外形が矩形状で前記一対の電極に両端部が重なるように形成されたレジスト膜とを備え、前記電極と前記レジスト膜との重なる面の幅を、前記基板の幅と略等しくしたことを特徴とする。   The present invention provides a surface-mount type semiconductor device in which a semiconductor element is mounted on a rectangular substrate, and the semiconductor element is mounted on a pair of electrodes having a U-shaped cross section at both ends of the substrate. And a resist film formed on the opposite surface of the mounting surface so that both ends overlap the pair of electrodes, and the width of the surface where the electrodes and the resist film overlap each other is It is characterized by being substantially equal to the width.

本発明の半導体装置は、矩形状に形成された基板に半導体素子を搭載した表面実装型の半導体装置において、基板の両端部に断面がコ字状に形成された一対の電極と、半導体素子を搭載した搭載面の反対面に、外形が矩形状で前記一対の電極に両端部が重なるように形成されたレジスト膜とを備え、電極とレジスト膜との重なる面の幅を、基板の幅と略等しくしたことにより、レジスト膜が基板の片側面を補強するように形成されているので、基板の撓みに対する強度がアップする。よって、不良の発生を抑止することが可能である。   A semiconductor device of the present invention is a surface-mount type semiconductor device in which a semiconductor element is mounted on a rectangular substrate, and a pair of electrodes having a U-shaped cross section at both ends of the substrate, and a semiconductor element And a resist film formed on the opposite surface of the mounting surface so that both ends overlap the pair of electrodes, and the width of the surface where the electrodes and the resist film overlap is defined as the width of the substrate. Since the resist film is formed so as to reinforce one side surface of the substrate, the strength against bending of the substrate is increased. Therefore, it is possible to suppress the occurrence of defects.

また、このレジスト膜は、従来の半導体装置に形成されたレジスト膜の外形の形状を変更するだけなので、製造工程を変更する必要が無い。よってコストアップせずに対策を施すことができる。   Moreover, since this resist film only changes the external shape of the resist film formed in the conventional semiconductor device, it is not necessary to change the manufacturing process. Therefore, measures can be taken without increasing the cost.

本願の第1の発明は、矩形状に形成された基板に半導体素子を搭載した表面実装型の半導体装置において、基板の両端部に断面がコ字状に形成された一対の電極と、半導体素子を搭載した搭載面の反対面に、外形が矩形状で一対の電極に両端部が重なるように形成されたレジスト膜とを備え、電極とレジスト膜との重なる面の幅を、基板の幅と略等しくしたことを特徴とするものである。   According to a first aspect of the present invention, in a surface-mount type semiconductor device in which a semiconductor element is mounted on a rectangular substrate, a pair of electrodes having a U-shaped cross section at both ends of the substrate, and the semiconductor element And a resist film formed so that both ends overlap a pair of electrodes on the opposite surface of the mounting surface, and the width of the surface where the electrode and the resist film overlap is defined as the width of the substrate. It is characterized by being substantially equal.

レジスト膜が基板の両端部に形成された一対の電極に両端部が重なるように接続しているので、基板の厚みをレジスト膜により厚くしたことと同じ効果を得ることができる。   Since the resist film is connected so that both ends overlap with a pair of electrodes formed on both ends of the substrate, the same effect can be obtained as when the thickness of the substrate is increased by the resist film.

また、図2(b)に示される従来の半導体装置のレジスト膜16のように徐々にレジスト膜16の幅が細くなるように窪んだ部分があると、撓みの応力に対してはレジスト膜16の最も狭くなった箇所の幅しか基板を補強することができない。基板の電極が形成されていない両端辺部分は、撓みに対して補強するものがないため基板の割れや配線パターンが剥離しやすい。本発明の半導体発光装置のレジスト膜は、その外形を矩形状とし、電極とレジスト膜との重なる面の幅を基板の幅と略等しくしている。従って、電極が形成されていない両端辺部分を補強するために、レジスト膜の外形を矩形状とし、電極とレジスト膜との重なる面の幅を基板の幅と略等しくすることで、電極が形成されていない両端辺部分を補強することができる。   Further, if there is a concave portion such that the width of the resist film 16 gradually becomes narrower like the resist film 16 of the conventional semiconductor device shown in FIG. 2B, the resist film 16 against the bending stress. Only the width of the narrowest part of the substrate can be reinforced. Since both ends of the substrate where no electrode is formed have no reinforcement against bending, the substrate is easily cracked or the wiring pattern is peeled off. The resist film of the semiconductor light emitting device of the present invention has a rectangular outer shape, and the width of the surface where the electrode and the resist film overlap is substantially equal to the width of the substrate. Therefore, in order to reinforce both side portions where the electrode is not formed, the outer shape of the resist film is rectangular, and the width of the surface where the electrode and the resist film overlap is substantially equal to the width of the substrate, thereby forming the electrode. It is possible to reinforce the ends that are not formed.

また、電極が矩形状に形成された基板の両端部に断面コ字状に形成され、レジスト膜がこの両端部の電極に重なるように形成されているので、レジスト膜の形成面である実装面が反る撓みに対して、レジスト膜が一対の電極をそれぞれ引っ張るようにして反発する。従って、基板の撓みに対する強度がアップする。   In addition, since the electrodes are formed in a U-shaped cross section at both ends of the rectangular substrate, and the resist film is formed so as to overlap the electrodes at both ends, the mounting surface that is the formation surface of the resist film The resist film is repelled by pulling the pair of electrodes against the warping. Accordingly, the strength against bending of the substrate is increased.

また、このレジスト膜は、従来の半導体装置に形成されたレジスト膜の外形の形状を変更するだけなので、製造工程を変更する必要が無い。   Moreover, since this resist film only changes the external shape of the resist film formed in the conventional semiconductor device, it is not necessary to change the manufacturing process.

本願の第2の発明は、レジスト膜の中央部に、基板が露出するような露出部が形成されていることを特徴としたものであり、基板が撓む応力に対しては、基板の中央部分であれば基板が露出するようにレジスト膜を形成しても、その露出部分を除いたレジスト膜により撓み強度が確保できる。また、レジスト膜を形成する樹脂の量を節約することができる。   The second invention of the present application is characterized in that an exposed portion is formed in the central portion of the resist film so that the substrate is exposed. Even if the resist film is formed so that the substrate is exposed at the portion, the bending strength can be secured by the resist film excluding the exposed portion. Further, the amount of resin for forming the resist film can be saved.

本発明の実施の形態に係る半導体装置の構成を、半導体発光装置を例に図1に基づいて説明する。図1は本発明の実施の形態に係る半導体装置の構成を説明する図であり、(a)は正面断面図、(b)は平面図、(c)は底面図である。   A configuration of a semiconductor device according to an embodiment of the present invention will be described with reference to FIG. 1 by taking a semiconductor light emitting device as an example. 1A and 1B are diagrams illustrating a configuration of a semiconductor device according to an embodiment of the present invention, in which FIG. 1A is a front sectional view, FIG. 1B is a plan view, and FIG.

図1に示すように、本発明の実施の形態に係る半導体装置の一例である半導体発光装置1は、表面実装型であり、矩形状に形成された基板2と、半導体発光素子3と、一対の電極4,5と、レジスト膜6とを備えている。   As shown in FIG. 1, a semiconductor light emitting device 1 which is an example of a semiconductor device according to an embodiment of the present invention is a surface mount type, and includes a substrate 2 formed in a rectangular shape, a semiconductor light emitting element 3, and a pair. Electrodes 4 and 5 and a resist film 6.

基板2には、半導体素子3の搭載面に配線パターン7,8が形成されている。配線パターン7は、半導体発光素子3と導通搭載し、電極4と接続することで、半導体発光素子3と電極4とを導通している。配線パターン8は、ワイヤ9を介して半導体発光素子3と接続され、電極5に接続されることで、半導体発光素子3と電極5とを導通している。   On the substrate 2, wiring patterns 7 and 8 are formed on the mounting surface of the semiconductor element 3. The wiring pattern 7 is electrically connected to the semiconductor light emitting element 3 and connected to the electrode 4, thereby electrically connecting the semiconductor light emitting element 3 and the electrode 4. The wiring pattern 8 is connected to the semiconductor light emitting element 3 via the wire 9 and is connected to the electrode 5, thereby electrically connecting the semiconductor light emitting element 3 and the electrode 5.

半導体発光素子3は、樹脂モールド17により封止されている。   The semiconductor light emitting element 3 is sealed with a resin mold 17.

電極4,5は、基板2の両端部に形成されている。この電極4,5は、他の基板である実装基板に設けられた電極と接続して半導体発光素子3と導通するために、断面コ字状に形成されている。電極4,5の幅は、基板2の短手方向の幅と等しく形成される。これは、この半導体発光装置1を製造する場合に、複数の半導体発光素子を一列に搭載した基板に電極を形成した後に、基板を切断して個々の半導体発光装置としているからである。   The electrodes 4 and 5 are formed at both ends of the substrate 2. The electrodes 4 and 5 are formed in a U-shaped cross section so as to be connected to an electrode provided on a mounting substrate which is another substrate and to be electrically connected to the semiconductor light emitting element 3. The widths of the electrodes 4 and 5 are formed to be equal to the width of the substrate 2 in the short direction. This is because, when the semiconductor light emitting device 1 is manufactured, after forming electrodes on a substrate on which a plurality of semiconductor light emitting elements are mounted in a row, the substrate is cut into individual semiconductor light emitting devices.

レジスト膜6は、半導体発光素子3の搭載面の反対面である実装面に形成されている。このレジスト膜6により、基板2の厚みを厚くしたことと同じ効果を得ることができる。   The resist film 6 is formed on a mounting surface that is opposite to the mounting surface of the semiconductor light emitting element 3. This resist film 6 can provide the same effect as increasing the thickness of the substrate 2.

レジスト膜6は、その外形を矩形状とし、電極4,5とレジスト膜6との重なる面の幅を基板の幅と略等しくしている。基板2は電極4,5が形成されていない両端辺2a,2b部分は、撓みに対して補強するものがないため基板2の割れや配線パターン7,8が剥離しやすい。従って、電極4,5が形成されていない両端辺部分を補強するために、レジスト膜6の外形を矩形状とし、電極4,5とレジスト膜6との重なる面の幅を基板2の幅と略等しくすることで、電極4,5が形成されていない両端辺2a,2b部分を補強することができる。   The resist film 6 has a rectangular outer shape, and the width of the overlapping surface of the electrodes 4 and 5 and the resist film 6 is substantially equal to the width of the substrate. Since both ends 2a and 2b of the substrate 2 where the electrodes 4 and 5 are not formed have no reinforcement against bending, the cracks of the substrate 2 and the wiring patterns 7 and 8 are easily peeled off. Therefore, in order to reinforce both end portions where the electrodes 4 and 5 are not formed, the outer shape of the resist film 6 is rectangular, and the width of the surface where the electrodes 4 and 5 and the resist film 6 overlap is the width of the substrate 2. By making them substantially equal, both end sides 2a and 2b where the electrodes 4 and 5 are not formed can be reinforced.

また、電極4,5が矩形状に形成された基板2の両端部に断面コ字状に形成され、レジスト膜6がこの両端部の電極4,5に重なるように形成されているので、レジスト膜6の形成面である実装面が反る撓みに対して、レジスト膜6が一対の電極4,5をそれぞれ引っ張るようにして反発する。従って、基板2の撓みに対する強度がアップする。   Further, the electrodes 4 and 5 are formed in a U-shaped cross section at both ends of the substrate 2 formed in a rectangular shape, and the resist film 6 is formed so as to overlap the electrodes 4 and 5 at both ends. The resist film 6 is repelled by pulling the pair of electrodes 4 and 5 with respect to the bending of the mounting surface on which the film 6 is formed. Accordingly, the strength against bending of the substrate 2 is increased.

また、レジスト膜6には、中央部を基板2が三角形状に露出する露出部18を設けている。この露出部18を三角形状とすることで、半導体発光装置1の電極4,5のアノード側またはカソード側の方向を表すことができる。また、レジスト膜6を形成する樹脂を節約することができる。   The resist film 6 is provided with an exposed portion 18 where the substrate 2 is exposed in a triangular shape at the center. By making the exposed portion 18 triangular, the direction of the anode side or the cathode side of the electrodes 4 and 5 of the semiconductor light emitting device 1 can be expressed. Further, the resin for forming the resist film 6 can be saved.

この露出部18は、基板2の中央部分に形成されているので、電極が形成されていない両端辺部分を補強するために外形を矩形状とした形状には影響しない。従って、その露出部18部分を除いたレジスト膜6により撓み強度が確保できる。また、レジスト膜6を形成する樹脂の量を節約することができる。本実施の形態では露出部18を三角形状としたが、四角形状、多角形状または異形状としてもよい。   Since the exposed portion 18 is formed in the central portion of the substrate 2, it does not affect the rectangular shape of the outer shape in order to reinforce both end portions where the electrodes are not formed. Therefore, the bending strength can be secured by the resist film 6 excluding the exposed portion 18. Further, the amount of resin for forming the resist film 6 can be saved. In the present embodiment, the exposed portion 18 has a triangular shape, but may have a rectangular shape, a polygonal shape, or an irregular shape.

レジスト膜6は、図2に示される半導体装置に形成されたレジスト膜16や、図3に示される半導体装置のレジスト膜24の外形の形状を変更し、露出部18を設けただけなので、製造工程を変更する必要が無い。よってコストアップせずに対策を施すことができる。   The resist film 6 is manufactured by changing the outer shape of the resist film 16 formed on the semiconductor device shown in FIG. 2 and the resist film 24 of the semiconductor device shown in FIG. There is no need to change the process. Therefore, measures can be taken without increasing the cost.

本発明は、基板の撓み強度を向上させて不良の発生を抑止することが可能なので、基板の両端部にそれぞれ電極が設けられた表面実装型の半導体装置に好適である。   Since the present invention can suppress the occurrence of defects by improving the flexural strength of the substrate, it is suitable for a surface mount type semiconductor device in which electrodes are provided at both ends of the substrate.

本発明の実施の形態に係る半導体装置の構成を説明する図であり、(a)は正面断面図、(b)は平面図、(c)は底面図BRIEF DESCRIPTION OF THE DRAWINGS It is a figure explaining the structure of the semiconductor device which concerns on embodiment of this invention, (a) is front sectional drawing, (b) is a top view, (c) is a bottom view. (a)は従来の半導体装置の半導体素子の搭載面側の図、(b)は実装面側の図(A) is the figure of the mounting surface side of the semiconductor element of the conventional semiconductor device, (b) is the figure of the mounting surface side. 他の従来の半導体装置の底面図Bottom view of another conventional semiconductor device

符号の説明Explanation of symbols

1 半導体発光装置
2 基板
3 半導体発光素子
4,5 電極
6 レジスト膜
7,8 配線パターン
9 ワイヤ
17 樹脂モールド
18 露出部

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Board | substrate 3 Semiconductor light-emitting element 4,5 Electrode 6 Resist film 7, 8 Wiring pattern 9 Wire 17 Resin mold 18 Exposed part

Claims (1)

矩形状に形成された基板に半導体素子を搭載した表面実装型の半導体装置において、
前記基板の長手方向の両端部に断面がコ字状かつ、前記基板の短手方向の幅と等しく形成された一対の電極と、前記半導体素子を搭載した搭載面の反対面に、外形が矩形状で前記一対の電極に両端部が重なるように形成されたレジスト膜とを備え、前記電極と前記レジスト膜との重なる面の前記基板の短手方向の幅を、前記基板の短手方向の幅と略等しくし、前記レジスト膜の中央部に、前記基板が露出するような露出部が形成されていることを特徴とする半導体装置。
In a surface mount type semiconductor device in which a semiconductor element is mounted on a rectangular substrate,
A pair of electrodes having a U-shaped cross section at both ends in the longitudinal direction of the substrate and having a width equal to the width in the short direction of the substrate, and a rectangular outer shape on the opposite surface of the mounting surface on which the semiconductor element is mounted. and a resist film formed to both end portions overlaps the pair of electrodes in shape, the lateral direction of the width of the substrate overlaps the surface of the electrode and the resist film, the lateral direction of the substrate A semiconductor device characterized in that an exposed portion is formed so as to be substantially equal to the width and to expose the substrate at a central portion of the resist film .
JP2004214070A 2004-07-22 2004-07-22 Semiconductor device Expired - Fee Related JP4552552B2 (en)

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JP2004214070A JP4552552B2 (en) 2004-07-22 2004-07-22 Semiconductor device

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Application Number Priority Date Filing Date Title
JP2004214070A JP4552552B2 (en) 2004-07-22 2004-07-22 Semiconductor device

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JP4552552B2 true JP4552552B2 (en) 2010-09-29

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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738233A (en) * 1993-07-16 1995-02-07 Sony Corp Printed wiring board and manufacturing method thereof
JPH1097902A (en) * 1996-09-20 1998-04-14 Hokuriku Electric Ind Co Ltd Chip resistor
JP2001177151A (en) * 1999-12-21 2001-06-29 Sharp Corp Chip component type LED
JP2001352160A (en) * 2000-06-07 2001-12-21 Rohm Co Ltd Wiring pattern for resist for protection

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