JP4580967B2 - Power conversion circuit - Google Patents

Description

  The present invention relates to a power conversion circuit.

  In recent years, drive devices that are small in size and high in output for industrial use or electric power use have been adopted in many fields.

  Switching elements such as bipolar transistors, FETs, IGBTs, and GTO thyristors are used as main circuit elements of the drive device. For example, as described in “Motor Driver Module” of Japanese Patent Application Laid-Open No. 7-130927 (Patent Document 2), these are generally combined with a free wheel diode in a package that is exclusively manufactured for each capacity. It is mounted and assembled to form a so-called modular device structure. This module element technology is also described in “Semiconductor Device and Manufacturing Method Thereof” of Japanese Patent Laid-Open No. 9-298262 (Patent Document 3).

  Furthermore, conventionally, for example, as described in Japanese Utility Model Laid-Open No. 6-26269 (Patent Document 1), a set of switching elements and freewheeling diodes is packaged in a package of 2 sets, 4 sets, or 6 sets. Packages, 4 in 1 packages, and 6 in 1 packages have also appeared, and some have a structure convenient for configuring a drive device circuit for driving a single-phase circuit or a three-phase circuit.

  In addition, the components include a cooling device for module elements that generate heat during operation, a pre-drive circuit that drives the main circuit elements, a smoothing capacitor, etc., all of which constitute a drive device.

  When a main drive device having a module structure for each capacity is used to make the drive device small, the main circuit device requires a dedicated product that matches the drive device capacity. Therefore, when the capacity is changed, it is necessary to develop again.

However, with the conventional structure, when redesigning, a new design that matches the capacity from the capacity of the main circuit element itself to the package structure is required, so there are many development man-hours and it is difficult to reduce the cost. there were.
Japanese Utility Model Publication No. 6-26269 JP-A-7-130927 JP-A-9-298262

  The present invention has been made in view of such a conventional technical problem, and an object of the present invention is to provide a power conversion circuit capable of realizing a drive device in accordance with a necessary capacity at a low cost.

A power conversion circuit according to a first aspect of the present invention provides a switching element as a main circuit element and a free wheel diode mounted on a common substrate and resin-molded to form a rectangular parallelepiped resin molded portion, The four or more even bodies (hereinafter referred to as “2M bodies” ) of the semiconductor modules in which the main circuit terminals and the second main circuit terminals are protruded in a direction perpendicular to the side surfaces on one side surface of the resin mold portion. Is a natural number of 2 or more.) Are arranged in two rows so that the non-projecting side surfaces of the terminal group of the resin mold portion face each other, and are arranged in parallel with each other. the condenser was arranged, and all the semiconductor modules inside side surface of the resin mold portion is adhered to constitute a main circuit components for one phase, a plurality of phases of the main circuit components ( "N-phase" That .N is a natural number. The), semiconductor modules for each phase arranged so that back-to-back, the entire semiconductor module to the arrangement of M rows × 2N columns 1,3 of 2N columns, ..., 2N-1 The first main circuit terminal of each of the semiconductor modules in the second row is connected to one of the positive side and negative side common terminals, and the second, 4,... One main circuit terminal is connected to the other of the positive side and negative side common terminals, and the second main circuit terminals of the semiconductor modules of the main circuit components of each phase of the N phase are connected to the load side common terminal It is a thing.

According to a second aspect of the present invention, in the power conversion circuit of the first aspect, both sides of two semiconductor modules facing each other across the element cooler are sandwiched by C-shaped springs, and the two semiconductor modules, the element cooler, It is characterized by having adhered .

In the power conversion circuit according to the first aspect of the present invention, the switching element as the main circuit element and the free wheel diode are mounted on a common substrate and resin-molded to form a rectangular parallelepiped resin mold portion. A semiconductor module in which a main circuit terminal and a second main circuit terminal are protruded in a direction perpendicular to the side surface on one side surface of the resin mold portion is arranged in M rows × 2N columns , and N having a capacity required for design The phase power conversion circuit can be freely configured.

In the power conversion circuit according to the second aspect of the present invention, a set of two semiconductor modules facing each other with the element cooler interposed therebetween is integrated by being sandwiched from both sides by a C-shaped spring so that the two sets of semiconductor modules are unit-set. Thus, it is possible to facilitate the production work of the power conversion circuit constituted by a large number of semiconductor module assemblies.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First Embodiment)
A semiconductor module 101 according to a first embodiment of the present invention will be described with reference to FIG . In the semiconductor module 101 according to the present embodiment, a switching element such as a bipolar transistor, FET, IGBT, GTO thyristor and the like as a main circuit element and a free wheel diode are mounted together and molded in a resin mold 10 as a main circuit element.
In the following description of each embodiment, the terminals are applied to bipolar transistors and IGBTs, the emitter terminal, the collector terminal is the first main circuit terminal, the second main circuit terminal, the gate terminal is the control signal terminal. However, the terminal names may be different for FETs, GTO thyristors, and the like. Also in such a semiconductor switching element, the terminals corresponding to the emitter terminal, the collector terminal, and the gate terminal of the bipolar transistor form the first main circuit terminal, the second main circuit terminal, and the control signal terminal.
The main circuit terminal groups 3 and 4 are short and the signal terminal groups 1 and 2 protrude long from one side surface of the resin mold portion 10. The arrangement of the terminal group will be described. 1 is a gate terminal, and 2 is a protection signal terminal. Reference numeral 3 denotes an emitter terminal which forms a first main circuit terminal, and 4 denotes a collector terminal which forms a second main circuit terminal. The emitter terminal 3 has a longer projecting length than the collector terminal 4 for connection with a smoothing capacitor.

As will be described later, the semiconductor module 101 of the first embodiment is in a two-to-one pair as shown in FIG. 2 and has a required capacity M and phase N M × N (N × 2M in resin module units). Only in a matrix, and can be used to configure the power conversion circuit 410 by connecting using a plate-like bus bar.

(Second Embodiment)
Next, the power conversion circuit 410 according to the second embodiment of the present invention will be described with reference to FIG . The power conversion circuit 410 according to the present embodiment has two semiconductor modules 101 shown in FIG. 1 facing each other to form one set of semiconductor modules, and four sets are arranged in parallel. A main circuit component 210 for one phase is disposed so that the long element cooler 20 is in close contact therewith, and is arranged in parallel for the U, V, and W3 phases.

  The U, V, and W phase main circuit components 210 are provided with U phase, V phase, and W phase bus bars 41U, 41V, and 41W, respectively, and project from the semiconductor modules 101 in a short manner. The collector terminal 4 which is the main circuit terminal is connected to each side edge from both sides.

Further, all the emitter terminals 3 in the row of one of the semiconductor modules 101 of each phase of U, V, W are connected by a plate-like positive (P) side bus bar 42, and the other one of the semiconductor modules 101 of each phase is connected. All of the emitter terminals 3 in the row are connected by a plate-like negative (N) bus bar 43. However, since the P-side bus bar 42 is located above (outside) the N-side bus bar 43 in FIG. 2 , each emitter terminal 3 at a predetermined position penetrates the P-side bus bar 43 without contacting the N-side bus bar 43. Each of the corresponding portions of the N-side bus bar 43 is perforated so as to contact only 42. Further, the P-side bus bar 42 and the N-side bus bar 43 are similarly perforated so that the low-voltage control signal terminal groups 1 and 2 pass therethrough. In the embodiment, these are the common holes 45. A pre-drive circuit is connected to the signal terminal groups 1 and 2 projecting long from the holes 45.

In the power conversion circuit 410 of the second embodiment having such a configuration, the semiconductor modules 101 of the first embodiment are arranged in parallel by the number M of sets corresponding to the required capacity, and the phases of the main circuit are arranged. The power conversion circuit corresponding to the capacity and the number of phases required in the design can be freely configured by the arrangement arranged in parallel by the portion N.

( Third embodiment)
Next, a semiconductor module assembly 211 according to a third embodiment of the present invention will be described with reference to FIG . In the semiconductor module assembly 211 of the present embodiment, two of the semiconductor modules 101 of the first embodiment shown in FIG. It is characterized by a structure in which it is sandwiched between the shape springs 27 and fixed integrally.

In the semiconductor module assembly 211 of the third embodiment having this configuration, a power conversion circuit that becomes complex and difficult to manufacture as the number of parallel circuits is increased in order to increase the capacity, and this assembly 211 is used as a unit. Arrangement of the required number makes it easy to manufacture the power conversion circuit 411 as shown in FIG. 4 , for example.

The power conversion circuit 411 shown in FIG. 4 includes eight sets (M = 4) of the semiconductor module assemblies 211 shown in FIG. 3 and a main circuit component 311 for one phase that is arranged in parallel. , V, W3 (N = 3) are arranged in parallel. In FIG. 4 , 26 is a smoothing capacitor, 42 is a plate-like P-side bus bar, 43 is a plate-like N-side bus bar, 41 is a load-side common terminal plate for each phase, and 310 is a pre-drive circuit.

  Note that the present invention is not limited to the above-described embodiments, and in particular, as the terminals protruding from the resin mold portion 10, basically only three input / output terminals of the switching element are required. In the case of a structure in which a protective circuit is further embedded in the resin mold part, the terminal for the protective circuit is also added. Further, the protruding length of the terminal may be set to the same length when the semiconductor module is manufactured, and post-processing may be performed by cutting or bending each terminal to an appropriate length depending on the application.

1 is a perspective view of a semiconductor module according to a first embodiment of the present invention. The perspective view of the power converter circuit of the 2nd Embodiment of this invention. The perspective view of the semiconductor module assembly of the 3rd Embodiment of this invention. The disassembled perspective view of the power converter circuit comprised using the semiconductor module assembly of the 3rd Embodiment of this invention.

DESCRIPTION OF SYMBOLS 1 Gate terminal 2 Protection signal terminal 3 Emitter terminal 4 Collector terminal 10 Resin mold part 20 Element cooler 26U, 26V, 26W Smoothing capacitor 27 C-shaped spring 41U, 41V, 41W Load side common terminal board 42 Positive (P) side bus bar 43 Negative (N) side bus bar 101 Semiconductor module
210 Semiconductor Module Assembly 211 Semiconductor Module Assembly 310 Bridge Drive Circuit 311 Main Circuit Component 410 Power Conversion Circuit 411 Power Conversion Circuit

Claims (2)

A switching element as a main circuit element and a freewheel diode are mounted on a common substrate and resin-molded to form a rectangular parallelepiped resin-molded portion. The first main circuit terminal and the second main circuit terminal of the switching element 4 or more even numbers of semiconductor modules (hereinafter referred to as “2M bodies”, where M is a natural number of 2 or more) in two rows . The resin mold parts are arranged so that the non-projecting side surfaces of the terminal groups face each other, and the element coolers are arranged between the two rows of the semiconductor modules arranged in the two rows. A main circuit component for one phase is constructed by closely contacting the inner side surface of the mold part,
A plurality of phases of the main circuit components (.N is a natural number. To "N phase"), the semiconductor module of each phase are arranged such that back-to-back, the entire semiconductor module to the arrangement of M rows × 2N columns,
The first main circuit terminal of each of the semiconductor modules in the 1st, 3rd, 2N-1 rows in the 2N row is connected to one of the positive side or negative side common terminals,
The first main circuit terminal of each of the semiconductor modules in columns 2, 2,..., 2N of the 2N columns is connected to the other of the positive side or negative side common terminals,
A power conversion circuit formed by connecting between the second main circuit terminals of each of the semiconductor modules of the main circuit components of each of the N phases to a load side common terminal. 2. The power conversion circuit according to claim 1 , wherein the two semiconductor modules facing each other across the element cooler are sandwiched by C-shaped springs, and the two semiconductor modules and the element cooler are brought into close contact with each other .