JP4581466B2 - Film forming method and film forming apparatus - Google Patents

Description

  The present invention relates to a dielectric laminate, a film forming method, and a film forming apparatus.

  Conventionally, a laminate (dielectric laminate) including a dielectric layer represented by a capacitor has been produced by superposing ceramic green sheets. That is, as a method for producing a dielectric laminate, a production method in which a plurality of ceramic green sheets coated with an electrode paste are stacked and fired, and dielectric layers and electrode layers are alternately laminated is widely known. Such a dielectric laminate is disclosed in, for example, Patent Document 1 and Patent Document 2 below.

JP-A-8-306580 JP-A-5-275272

  However, it is difficult to reduce the thickness of such a conventional dielectric laminate. That is, both the dielectric layer and the electrode layer having a thickness of about 1 μm have been put into practical use, and it has been difficult to make the thickness smaller than this thickness.

  SUMMARY An advantage of some aspects of the invention is to provide a dielectric laminate, a film forming method, and a film forming apparatus which are reduced in thickness.

In the film forming method according to the present invention, the pattern plate on which the slit is formed is arranged above the substrate so as to face the substrate, and the slit is formed with the pattern plate positioned at the first reference position with respect to the substrate. A first electrode film forming step for forming a first electrode film on the substrate by sputtering, and a second reference position where the pattern plate is shifted from the first reference position by a distance d1 in the width direction of the slit. A dielectric film forming step of sputtering a dielectric film on the substrate through the slit in a positioned state; and a third pattern plate shifted from the second reference position by a distance d2 in the width direction of the slit . a state located in the reference position, the second electrode film saw including a second electrode film forming step of forming the sum of distances d1 and d2 is less than the width of the slit on the substrate through the slit It is characterized by that.

In this film forming method, a first electrode film, a dielectric film, and a second electrode film having substantially the same shape as the slits formed on the pattern plate are formed by sputtering on the substrate. Thereby, a dielectric laminate is formed on the substrate with the dielectric film sandwiched between the two electrode films (that is, the first electrode film and the second electrode film). That is, thinning of the dielectric laminate, which has been difficult with a manufacturing method using a green sheet, is realized by forming an electrode film and a dielectric film by sputtering. Here, since the reference position of the pattern plate with respect to the substrate is different when the first electrode film, the dielectric film, and the second electrode film are formed, the first electrode film, the dielectric film, and the second electrode are used. when a film is formed by sequentially electrode films, these films are sequentially stacked in a state shifted in the width direction of the slit. Accordingly, in the dielectric laminate composed of the first electrode film, the dielectric film, and the second electrode film, a part of the surface of the first electrode film is sufficiently exposed. Connection with an electrode can be easily performed.

In addition, after the second electrode film forming step, a dielectric film forming step and a first electrode film forming step are sequentially performed, and after the first electrode film forming step, the dielectric film forming step is performed. It is preferable to alternately repeat the second stacking step in which the film step and the second electrode film forming step are sequentially performed . In this case, a part of the first electrode film is exposed from the dielectric film formed on the first electrode film. Therefore, when another first electrode film is formed at the same position as the first electrode film, two first electrode films that overlap vertically are exposed in the exposed portion of the first electrode film. Electrically connected. Similarly to the first electrode film, the second electrode film is electrically connected to the two second electrode films that are vertically overlapped at the portion exposed from the dielectric layer. That is, all the first electrode portions are electrically connected to each other, and all the second electrode portions are electrically connected to each other, so that the dielectric laminate can be multilayered and the capacitance can be increased.

A film forming apparatus according to the present invention is arranged above a substrate holder and a substrate placed on the substrate holder so as to face the substrate. Displacement means, a control unit for controlling the displacement means, and a target that opposes the substrate holder and discharges a sputtering substance deposited on the substrate through the slits of the pattern plate. When the first electrode film is formed, the pattern plate is arranged at the first reference position with respect to the substrate, and when the dielectric film is formed, the pattern plate is the first electrode film. place from the reference position to the second reference position shifted in the width direction of the slit by a distance d1, in forming the second electrode film is pattern plate distance in the width direction of the slit from the second reference position d2 shifted the third reference position was Disposed, the sum of the distances d1 and d2 is less than the width of the slit, it is characterized.

  In this film forming apparatus, the pattern plate disposed above the substrate of the substrate holder is displaced by the displacement means, and the displacement means is controlled by the control unit. Then, the control unit controls the displacement means to form the pattern plate when forming the first electrode film, forming the dielectric film, and forming the second electrode film, They are arranged at the first reference position, the second reference position, and the third reference position, respectively. Thereby, the first electrode film, the dielectric film, and the second electrode film having substantially the same shape as the slits formed on the pattern plate are sputter-deposited on the substrate. Thereby, a dielectric laminate is formed on the substrate with the dielectric film sandwiched between the two electrode films (that is, the first electrode film and the second electrode film). That is, thinning of the dielectric laminate, which has been difficult with a manufacturing method using a green sheet, is realized by forming an electrode film and a dielectric film by sputtering.

Note that the reference position of the pattern plate with respect to the substrate is different for each of the first electrode film, the dielectric film, and the second electrode film, so the first electrode film, the dielectric film, and the second electrode film are different. When the electrode films are formed in this order, these films are sequentially stacked in a state shifted in the width direction of the slit . Accordingly, in the dielectric laminate composed of the first electrode film, the dielectric film, and the second electrode film, a part of the surface of the first electrode film is sufficiently exposed. Connection with an electrode can be easily performed. In the case where a multilayer dielectric laminate is manufactured using this film forming apparatus, the first electrode film overlapping vertically is electrically connected in the portion exposed from the dielectric layer, and the dielectric In the portion exposed from the layer, the second electrode film overlapping vertically is electrically connected. That is, in the manufactured multilayer dielectric laminate, all the first electrode portions are electrically connected to each other, and all the second electrode portions are electrically connected to each other, thereby increasing the capacitance. Is planned.

Dielectric laminate according to the present invention, on a substrate, a dielectric laminate first electrode film plane shape is the same, the first dielectric film and the second electrode film are sequential lamination The first electrode film is located at the first reference position, and the first dielectric film is located at the second reference position shifted from the first reference position by a distance d1 in the width direction of the first electrode film. The second electrode film is located at a third reference position that is shifted from the second reference position by a distance d2 in the width direction of the first electrode film, and the sum of the distance d1 and the distance d2 is the first electrode film. It is characterized by being smaller than the width of .

This dielectric laminate is a dielectric laminate composed of a first electrode film, a first dielectric film, and a second electrode film formed on a substrate. That is, thinning of the dielectric laminate, which has been difficult with the manufacturing method using the green sheet, is realized by using a film forming technique such as sputtering. Here, since the first electrode film, the first dielectric film, and the second electrode film are sequentially stacked in a state shifted in the width direction of the first electrode film , A part of the surface of the first electrode film is sufficiently exposed, and the first electrode film and the external electrode can be easily connected.

A first electrode film, a first dielectric film, and a second electrode film; and a second dielectric film formed on the second electrode film and positioned at the second reference position; a plurality of laminates comprising, in a plurality of laminates, each of the first electrode film is consistent projection to the substrate, each of the second electrode film is consistent projection to the substrate, the respective first 1 of the dielectric film is consistent projection to the substrate, each of the second dielectric film is preferably projected onto the substrate coincide.

  In addition, it is preferable that the first electrode films overlapping vertically are directly connected and the second electrode films overlapping vertically are directly connected. In this case, since all the first electrode portions are electrically connected to each other and all the second electrode portions are electrically connected to each other, the capacitance is increased.

  ADVANTAGE OF THE INVENTION According to this invention, the dielectric laminated body, film-forming method, and film-forming apparatus with which thickness reduction was achieved are provided.

  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments that are considered to be the best for carrying out a dielectric laminate, a film forming method and a film forming apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. In addition, the same code | symbol is attached | subjected about the same or equivalent element, and the description is abbreviate | omitted when description overlaps.

  FIG. 1 is a partially cutaway perspective view showing a capacitor manufacturing apparatus (film forming apparatus) according to an embodiment of the present invention. The capacitor manufacturing apparatus 10 is an apparatus that forms a thin film on a substrate 12 using a sputtering method.

  The apparatus 10 includes a chamber 14, a substrate holder 16 provided in the vicinity of the lower end portion in the chamber 14, a target support plate 18 provided in the vicinity of the upper end portion in the chamber 14, and a substrate holder 16 and a target support plate 18. And two shutter plates 20 and 21 provided between the two.

Two target holders 21A and 21B that also serve as cathodes are fixed to the target support plate 18, and a metal target 22A and a dielectric target 22B are attached to these target holders 21A and 21B, respectively. Cu, Ni, Ta, Pt, Au, Ag, Pd, etc. are selected as the material of the metal target, and BaTiO ₃ , SrTiO ₃ , PZT, CaTiO ₃ , SiO ₂ , Al ₂ O ₃ , SiN or the like is selected.

  The disc-shaped shutter plates 20 and 21 face the target support plate 18 respectively. At the positions corresponding to the metal target 22A and the dielectric target 22B of the target support plate 18 of the shutter plates 20 and 21, openings 24A, 24B, 25A and 25B having the same size as these targets 22A and 22B are provided. Is formed. That is, only the material that has passed through the openings 25 A and 25 B of the shutter plate 21 and the openings 24 A and 24 B of the shutter plate 20 among the sputtering materials scattered from the targets 22 A and 22 B is deposited on the substrate holder 16. That is, the shutter plates 20 and 21 significantly suppress the diffusion of the sputtering material, and the region where the sputtering material is deposited is limited to a predetermined region of the substrate holder 16.

  The shutter plates 20 and 21 are connected to a drive shaft 26 a of a motor 26 provided outside the chamber 14, and are rotated by the motor 26. That is, by controlling the rotation of the motor 26 by a motor control unit (not shown) and appropriately rotating the motor 26, the sputter deposition on the substrate 12 can be interrupted / resumed at a desired timing. In the above embodiment, the mode in which both the shutter plate 20 and the shutter plate 21 are controlled by the single motor 26 is shown, but the shutter plate 20 and the shutter plate 21 are connected to separate drive shafts, The rotation of the shutter plate 21 may be individually controlled. In addition, the shutter plate included in the apparatus 10 may be one, but the number of the shutter plates is more effectively suppressed when the number is two. Furthermore, the shutter plate 21 closer to the targets 22A and 22B is preferably closer to the targets 22A and 22B.

  The substrate holder 16 that functions as an anode has a disk shape, and four substrates 12 are placed on the upper surface 16a. These substrates 12 are arranged at positions shifted by 90 degrees with respect to the center of the substrate holder 16. Each substrate 12 faces the target support plate 18, and an electrode film and a dielectric film described later are formed on the substrate 12 by sputtering the targets 22 </ b> A and 22 </ b> B attached to the target support plate 18. However, as described above, the deposition region of the sputtering material is limited to the region corresponding to the openings 24A and 24B of the shutter plate 20 in the region of the upper surface 16a of the substrate holder 16.

  Here, the substrate holder 16 is connected to a drive shaft 28 a of a motor 28 provided outside the chamber 14, and is rotated by the motor 28. The rotation of the motor 28 is controlled by the control unit 29. By appropriately rotating the motor 26 by the control unit 29, the electrode film and the dielectric film can be formed on the substrate 12 that is not located in the deposition region of the sputtering material.

  A vacuum pump 32 is attached to the chamber 14 via a pipe 30, and the inside of the chamber 14 can be appropriately evacuated by opening and closing the valve 30 a of the pipe 30. The chamber 14 is provided with a pipe 34 used for intake and exhaust of discharge gas.

  Next, a patterning unit that covers each substrate 12 on the substrate holder 16 will be described with reference to FIG. In the apparatus 10 shown in FIG. 1, the patterning unit is omitted for simplicity of illustration.

  As shown in FIG. 2, the patterning unit 36 includes a rectangular pattern plate 38 facing the substrate holder 16 at a position close to the substrate 12, and a displacement unit (displacement means) that changes the relative position of the pattern plate 38 with respect to the substrate 12. 39). The displacement portion 39 is attached to the substrate holder 16 and extends in a direction orthogonal to the pattern plate 38, a connecting shaft 42 that connects the pattern plate 38 and the rotation shaft 40, and the substrate holder It consists of a pair of guide members 44A and 44B fixed at positions sandwiching 16 pattern plates 38. The rotation of the rotary shaft 40 is controlled by the same control unit 29 as the control unit that controls the rotation of the substrate holder 16. A servo motor or a stepping motor can be used as the motor that drives the rotating shaft 40.

  The connecting shaft 42 is rotatably attached to the end portion of the pattern plate 38 and is rotatably attached to an eccentric position of the rotating shaft 40. Therefore, when the rotary shaft 40 rotates, the pattern plate 38 swings. The pattern plate 38 is guided in one direction by the pair of guide members 44A and 44B. That is, by rotating the rotating shaft 40, the pattern plate 38 advances and retreats in a direction (arrow X direction in the figure) orthogonal to the direction in which the guide members 44A and 44B face each other.

The pattern plate 38 is formed with four slits 46 extending in the direction in which the guide members 44A and 44B face each other, and these slits 46 are arranged at equal intervals. For this reason, the sputtering material is deposited on the substrate 12 disposed under the pattern plate 38 in substantially the same shape as the four slits 46. Here, as described above, the pattern plate 38 is in a direction orthogonal to the slit 46 (that is, the width direction of the slit 46) by the cooperation of the connecting shaft 42, the rotating shaft 40, and the guide members 44A and 44B. Therefore, the substrate region on which the sputtering material is deposited can also be shifted in that direction (X direction). That is, as shown in FIGS. 2A to 2D, when the rotary shaft 40 rotates, the pattern plate 38 is displaced, and the relative position of the pattern plate with respect to the substrate changes. Therefore, in order to specify this relative position, the relative position (see FIG. 2A) where the pattern plate 38 is closest to the rotation shaft 40 is the position A (first reference position), and the pattern plate 38 is the rotation shaft 40. farthest relative position from a position (see FIG. 2 (c)) C (third reference position), an intermediate relative position between the position C and the position a (see FIG. 2 (b) and see FIG. 2 (d)) Position B. That is, the distance between the position A and the position B is equal to the distance between the position B and the position C, and for convenience of explanation, the distance is d.

  Next, the control of the control unit 29 when manufacturing a capacitor using the apparatus 10 will be described with reference to FIGS.

  As described above, the control unit 29 can control the position of the substrate 12 by controlling the rotation of the substrate holder 16. Further, the control unit 29 can control the relative displacement of the pattern plate 38 with respect to the substrate 12 by controlling the rotation of the rotating shaft 40 of the patterning unit 36. And the control part 29 produces a capacitor | condenser by controlling so that the positional relationship of the position of the board | substrate 12 and the relative position of the pattern board 38 will be in the four states shown below.

  That is, in the first state, the substrate 12 is positioned in the deposition region 48A of the metal target 22A on the substrate holder 16 (see FIG. 3A), and the pattern plate 38 corresponding to the substrate 12 is disposed at the position A. As shown (see FIG. 2A), the position is controlled by the control unit 29. At this time, an electrode film (first electrode film) 50A having a thickness of about 10 nm is formed on the substrate 12 in a region corresponding to the slit 46 of the pattern plate 38 by sputtering of the metal target 22A.

  In the second state, the substrate 12 is positioned in the deposition region 48B of the dielectric target 22B on the substrate holder 16 (see FIG. 3B), and the pattern plate 38 corresponding to the substrate 12 is disposed at the position B. In this manner (see FIG. 2B), the position is controlled by the control unit 29. At this time, a dielectric film 50B having a thickness of about 10 nm is formed on the substrate 12 in a region corresponding to the slit 46 of the pattern plate 38 by sputtering of the dielectric target 22B. In addition, since the position of the slit 46 with respect to the substrate 12 changes between the first state and the second state, the dielectric film 50B has a distance d (ie, the width direction (X direction) of the slit 46 from the electrode film 50A. The film is shifted by a distance of (position A and position B).

  In the third state, the substrate 12 is positioned in the deposition region 48A of the metal target 22A on the substrate holder 16 (see FIG. 3C), and the pattern plate 38 corresponding to the substrate 12 is disposed at the position C. The position is controlled by the controller 29 (see FIG. 2C). At this time, an electrode film (second electrode film) 50C having a thickness of about 10 nm is formed on the substrate 12 in a region corresponding to the slit 46 of the pattern plate 38 by sputtering of the metal target 22A. In addition, since the position of the slit 46 with respect to the substrate 12 changes between the second state and the third state, the electrode film 50C has a distance d (ie, the width direction (X direction) of the slit 46 from the dielectric film 50B). The film is shifted by a distance of (position B and position C).

  The fourth state is the same as the second state, and the substrate 12 is positioned in the deposition region 48B of the dielectric target 22B on the substrate holder 16 (see FIG. 3D) and corresponds to the substrate 12. The position of the pattern plate 38 is controlled by the control unit 29 so that the pattern plate 38 is disposed at the position B (see FIG. 2D). At this time, a dielectric film 50D (50B) having a thickness of about 10 nm is formed on the substrate 12 in a region corresponding to the slit 46 of the pattern plate 38 by sputtering of the dielectric target 22B. Since the position of the slit 46 with respect to the substrate 12 changes between the third state and the fourth state, the dielectric film 50D is displaced from the dielectric film 50C by the distance d in the width direction (X direction) of the slit 46. To form a film.

  And the control part 29 is controlled so that the positional relationship of the position of the board | substrate 12 and the relative position of the pattern board 38 changes in order of a 1st state, a 2nd state, a 3rd state, and a 4th state. After the fourth state, the first state is restored. The control unit 29 completes the film formation on the substrate 12 and dices into a predetermined shape by making two transitions in the order of the first state, the second state, the third state, and the fourth state. Thus, the capacitor (dielectric laminate) 52 shown in FIG. 5 is obtained.

  As shown in FIG. 5A, the capacitor 52 is formed on an electrode film 50A, a dielectric film 50B, an electrode film 50C, a dielectric film 50B, an electrode film 50A, a dielectric film 50B, and an electrode film 50C on the substrate 12. Are sequentially stacked. Each of the electrode film 50A, the dielectric film 50B, and the electrode film 50C is laminated on the lower film in a state shifted in the width direction of the slit 46 of the pattern plate 38, and the shape thereof is a pattern. The shape is the same as the slit 46 of the plate 38. That is, the electrode film 50A, the dielectric film 50B, and the electrode film 50C each overlap with the same kind of film in a state where the projection onto the substrate 12 is coincident (see FIG. 5B).

  The two-layer electrode film 50A is in direct contact with the upper and lower directions and is electrically connected. Further, the two-layer electrode film 50C is also in direct contact with the vertical direction and is electrically connected. That is, since the plurality of electrode films 50A are electrically connected and the plurality of electrode films 50C are electrically connected, the capacitor 52 has a plurality of capacitor structures connected in parallel. Increased capacity has been realized. Since the capacitor 52 has a part of the surface of the electrode films 50A and 50C sufficiently exposed from the dielectric film 50B, the electrode films 50A and 50C can be easily connected to the external electrodes.

  As described in detail above, in the capacitor manufacturing apparatus 10, the control unit 29 controls the displacement unit 39 to form the electrode film 50A, the dielectric film 50B, and the electrode. When the film 50C is formed, the pattern plate 38 is disposed at the position A, the position B, and the position C, respectively. As a result, a capacitor 52 is formed on the substrate 12 with the dielectric film 50B sandwiched between the electrode films 50A and 50C. The electrode films 50A and 50C and the dielectric film 50B can be formed with a thickness of about 10 nm. Therefore, the capacitor 52 is thinner than a capacitor using a green sheet composed of an electrode layer and a dielectric layer having a thickness of about 1 μm. In other words, the thinning of the capacitor, which has been difficult with the manufacturing method using the green sheet, is realized by forming the electrode films 50A and 50C and the dielectric film 50B by sputtering.

  The capacitor 52 can be used as an electric circuit represented by a high-pass filter, a low-pass filter, or the like by appropriately connecting to a predetermined coil. FIG. 6 shows an example of such a filter. As shown in FIG. 6, the filter 60 includes the capacitor 52 shown in FIG. 5 and a coil 62 formed on the substrate 12 of the capacitor. One end 62a of the coil 62 is connected to the electrode film 50A of the capacitor 52, and the other end 62b is connected to the external electrode terminal 64A. The electrode film 50C of the capacitor 52 is connected to the other external electrode terminal 64B.

  When manufacturing the filter 60, first, an insulating film 66 having a thickness covering the entire capacitor 52 is formed on the substrate 12, and positions corresponding to the electrode film 50A and the electrode film 50C of the capacitor 52 and external electrode terminals are formed. Vias 68A, 68B, 68C penetrating the insulating film 66 are formed at positions corresponding to 64A (see FIG. 7).

  Next, an electrode film for plating is formed by sputtering on the entire surface of the insulating film 66, and one end portion 62a is formed in the via 68C by using an electrode film having a predetermined shape obtained by photolithography using a predetermined mask pattern. The coil 62 and the electrodes 65A and 65B connected to are plated on the insulating film 66 (see FIG. 8). Then, an insulating film 70 having a thickness that covers the entire coil 62 is formed on the insulating film 66, a pair of external electrode terminals 64 A and 64 B connected to the electrodes 65 A and 65 B, and an end portion of the coil 62. The electrode terminal 64C connected to 62b and the connecting electrode 72 connecting the electrode terminal 64C and the external electrode terminal 64A are formed by plating to complete the production of the filter 60.

  The present invention is not limited to the above embodiment, and various modifications are possible. For example, the number of stacked capacitors may be appropriately increased or decreased. Further, the slit shape of the pattern plate may be, for example, as shown in FIG. Furthermore, although the mode which supports a pattern board only on one side by the displacement part was shown, in order to support more reliably, another similar displacement part may be prepared suitably and a pattern board may be supported from both sides. . In the above-described embodiment, a capacitor is shown as an example of a dielectric laminate. However, other devices may be used as long as the laminate includes a dielectric layer. It can be manufactured by a film forming method and a film forming apparatus that are the same as or equivalent to the apparatus.

It is the figure which showed the capacitor | condenser manufacturing apparatus which concerns on embodiment of this invention. It is the top view which showed the patterning unit and its movement. It is the figure which showed the state of rotation of a substrate holder. It is the figure which showed the state of the sputter film formation on a board | substrate. It is the (a) sectional view and the (b) top view showing the capacitor concerning an embodiment. (A) is the top view which showed the filter using the capacitor | condenser shown in FIG. 5, (b) is the II sectional view taken on the line of (a). (A) is a top view which shows the preparation procedures of the filter shown in FIG. 6, (b) is the II sectional view taken on the line of (a). (A) is a top view which shows the preparation procedures of the filter shown in FIG. 6, (b) is the II sectional view taken on the line of (a). It is the figure which showed the other form of the pattern board.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Capacitor manufacturing apparatus, 12 ... Board | substrate, 16 ... Board | substrate holder, 22A, 22B ... Target, 29 ... Control part, 36 ... Pattern board, 39 ... Displacement part, 46 ... Slit, 50A ... Electrode film, 50B ... Dielectric film , 50C ... electrode film, 52 ... capacitor.

Claims (3)

Above the substrate, a pattern plate in which slits are formed is arranged so as to face the substrate,
A first electrode film forming step of sputtering a first electrode film on the substrate through the slit in a state where the pattern plate is positioned at a first reference position with respect to the substrate;
After the first electrode film forming step, the pattern plate is positioned at a second reference position that is shifted from the first reference position by a distance d1 in the width direction of the slit, and the pattern plate is inserted through the slit. A dielectric film forming step of sputtering a dielectric film on the substrate;
Wherein after the dielectric film forming step, in a state in which the pattern plate is positioned at a third reference position shifted by a distance d2 in the width direction of the slit from the second reference position, wherein through the slit substrate And a second electrode film forming step of forming a second electrode film on the top,
The film forming method, wherein the sum of the distance d1 and the distance d2 is smaller than the width of the slit. A first laminating step for sequentially performing the dielectric film forming step and the first electrode film forming step after the second electrode film forming step;
2. The film formation according to claim 1, wherein after the first electrode film formation step, a second lamination step in which the dielectric film formation step and the second electrode film formation step are sequentially performed is repeated alternately. Method. A substrate holder;
Above the substrate placed on the substrate holder, arranged to face the substrate, a pattern plate formed with a slit,
Displacement means for displacing the pattern plate in the surface direction;
A control unit for controlling the displacement means;
A target that opposes the substrate holder and emits a sputtering material deposited on the substrate through the slits of the pattern plate;
When the first electrode film is formed based on an instruction from the control unit, the displacement means places the pattern plate at a first reference position with respect to the substrate, and forms a dielectric film. In this case, the pattern plate is disposed at the second reference position that is shifted from the first reference position by a distance d1 in the width direction of the slit, and when the second electrode film is formed, the pattern plate The plate is disposed at a third reference position shifted from the second reference position by a distance d2 in the width direction of the slit;
The film forming apparatus, wherein a sum of the distance d1 and the distance d2 is smaller than a width of the slit.

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