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JP4596946B2 - Semiconductor mounting method - Google Patents
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JP4596946B2 - Semiconductor mounting method - Google Patents

Semiconductor mounting method Download PDF

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JP4596946B2
JP4596946B2 JP2005087379A JP2005087379A JP4596946B2 JP 4596946 B2 JP4596946 B2 JP 4596946B2 JP 2005087379 A JP2005087379 A JP 2005087379A JP 2005087379 A JP2005087379 A JP 2005087379A JP 4596946 B2 JP4596946 B2 JP 4596946B2
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terminal portion
cylindrical body
solder
heat
terminal
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JP2006269839A (en
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聡 堀江
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/245—Dispositions, e.g. layouts of outermost layers of multilayered bumps, e.g. bump coating being only on a part of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/283—Reinforcing structures, e.g. bump collars

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Description

本発明は、フリップチップ実装などの半導体実装方法に関するものである。   The present invention relates to a semiconductor mounting method such as flip chip mounting.

図６はフリップチップ実装の工程を示している。
図６（ｃ）に示すように半導体チップ１を基板２に実装する場合には、先ず、図６（ａ）に示すように半導体チップ１の端子部３にハンダボール４を形成し、次に図６（ｂ）に示すように基板２の端子部５に、前記半導体チップ１を裏返してセットし、この状態で加熱して常温に戻すことによって前記ハンダボール４が溶融し凝固して実装が完了する。 FIG. 6 shows a flip chip mounting process.
When the semiconductor chip 1 is mounted on the substrate 2 as shown in FIG. 6C, first, the solder balls 4 are formed on the terminal portions 3 of the semiconductor chip 1 as shown in FIG. As shown in FIG. 6B, the semiconductor chip 1 is set upside down on the terminal portion 5 of the substrate 2, and the solder ball 4 is melted and solidified by heating in this state and returning to normal temperature. Complete.

また、図８（ａ）に示すように基板２の表面に突起電極６を形成し、図８（ｂ）に示すように突起電極６の先端にハンダなどの接続層７を形成し、図８（ｃ）に示すように部品８を押し付けて加熱して両者を接続層７によって接合した技術も知られている。
特開２００２−８６３６１公報 特開２００４−５０２２９３公報 特開２００１−２７４２７７公報 Further, as shown in FIG. 8A, a protruding electrode 6 is formed on the surface of the substrate 2, and as shown in FIG. 8B, a connecting layer 7 such as solder is formed at the tip of the protruding electrode 6, and FIG. As shown in (c), a technique is also known in which the component 8 is pressed and heated to join the two together with a connection layer 7.
JP 2002-86361 A JP 2004-502293 A JP 2001-274277 A

ハンダボールによる半導体実装方法では、図７（ａ）（ｂ）に示すように半導体チップ１の端子部３のピッチが小さくなった場合には、隣接するハンダボールの間隔が少なくなって、前記ハンダボール４を溶融し凝固させた場合には、ハンダブリッジによる実装不良（Ａ）が発生する。   In the semiconductor mounting method using solder balls, as shown in FIGS. 7A and 7B, when the pitch of the terminal portions 3 of the semiconductor chip 1 is reduced, the interval between adjacent solder balls is reduced and the solder is reduced. When the balls 4 are melted and solidified, mounting defects (A) due to solder bridges occur.

また、図８の実装方法においても狭隣接の場合には接合時に突起電極６からはみだした接続層７のブリッジによる実装不良が発生する。
本発明は半導体チップの端子部のピッチが小さくてもハンダブリッジの発生を無くして実装の信頼性の向上を実現できる半導体実装方法を提供することを目的とする。 Also in the mounting method of FIG. 8, in the case of narrow adjacency, a mounting failure due to the bridge of the connection layer 7 protruding from the protruding electrode 6 occurs at the time of bonding.
An object of the present invention is to provide a semiconductor mounting method capable of improving the mounting reliability by eliminating the occurrence of solder bridges even when the pitch of the terminal portions of the semiconductor chip is small.

本発明の請求項１記載の半導体実装方法は、端子部にバンプが形成された第１の部材を第２の部材の端子部へ実装するに際し、第１の部材の端子部に熱収縮性樹脂による筒体を形成し、前記筒体の内側から第１の部材の前記端子部にかけてハンダをメッキし、前記筒体を熱収縮させ、前記熱収縮によって筒体の端面から前記ハンダが盛り上がった状態で前記第２の部材の端子部に第１の部材を押し付けて前記ハンダの溶融温度以上に昇温した後に降温して前記ハンダを介して第１の部材の端子部と第２の部材の端子部とをハンダ付けするとともに、前記筒体を、第１の部材の表面から第１の部材の端子部にかけて形成し、さらに、第１の部材の端子部と第２の部材の端子部とを前記ハンダ付けした状態では、加熱溶融もしくは熱収縮した前記筒体によって第２の基板の端子部から第２の基板の表面にかけて封止することを特徴とする。 In the semiconductor mounting method according to claim 1 of the present invention, when the first member having the bump formed on the terminal portion is mounted on the terminal portion of the second member, the heat shrinkable resin is applied to the terminal portion of the first member. Forming a cylindrical body, plating solder from the inside of the cylindrical body to the terminal portion of the first member, thermally contracting the cylindrical body, and the solder rising from the end surface of the cylindrical body by the thermal contraction Then, the first member is pressed against the terminal portion of the second member to raise the temperature to the melting temperature of the solder, and then the temperature is lowered and the terminal portion of the first member and the terminal of the second member are passed through the solder. The cylindrical body is formed from the surface of the first member to the terminal portion of the first member, and further, the terminal portion of the first member and the terminal portion of the second member are formed. In the soldered state, the heat-melted or heat-shrinked Wherein the sealing from the terminal portion of the second substrate by the body toward the surface of the second substrate.

本発明の請求項２記載の半導体実装方法は、請求項１において、第１の部材の端子部ごとに分離して前記筒体を形成することを特徴とする。
本発明の請求項３記載の半導体実装方法は、請求項１において、第１の部材の端子部に形成した前記筒体を、隣接する端子部に形成した筒体とは少なくとも先端部が分離された形状に形成することを特徴とする。 The semiconductor mounting method according to claim 2 of the present invention is characterized in that in claim 1, the cylindrical body is formed separately for each terminal portion of the first member.
According to a third aspect of the present invention, there is provided a semiconductor mounting method according to the first aspect, wherein at least a tip of the cylindrical body formed on the terminal portion of the first member is separated from the cylindrical body formed on the adjacent terminal portion. It is characterized by being formed in a different shape.

本発明の請求項４記載の構造体は、端子部にバンプが形成された第１の部材を第２の部材の端子部へ実装した構造体であって、熱収縮した熱収縮性樹脂によって形成された筒状で内部にハンダが入れられた筒体を前記第１の部材の端子部に設け、前記第１の部材の端子部と第２の部材の端子部とを前記筒体を介してハンダ付けして、加熱溶融もしくは熱収縮した前記筒体によって第２の基板の端子部から第２の基板の表面にかけて封止されていることを特徴とする。 The structure according to claim 4 of the present invention is a structure in which the first member having the bump formed on the terminal portion is mounted on the terminal portion of the second member, and is formed of a heat-shrinkable heat-shrinkable resin. A cylindrical body having solder formed therein is provided in the terminal part of the first member, and the terminal part of the first member and the terminal part of the second member are interposed via the cylindrical body. It is characterized by being sealed from the terminal portion of the second substrate to the surface of the second substrate by the soldered , heated and melted or contracted cylindrical body .

この構成によると、第１の部材の端子部に付けられたハンダは筒体によって周囲が覆われており、溶けたハンダの隣接した端子部への広がりが規制され、端子部のピッチが小さくてもハンダブリッジの発生を無くして実装の信頼性の向上を実現できる。   According to this configuration, the periphery of the solder attached to the terminal portion of the first member is covered with the cylindrical body, the spread of the molten solder to the adjacent terminal portion is restricted, and the pitch of the terminal portion is small. In addition, it is possible to improve the mounting reliability by eliminating the occurrence of solder bridges.

本発明の半導体実装方法を具体的な各実施の形態に基づいて説明する。
（実施の形態１）
図１は本発明の半導体実装方法による実装工程を示している。 The semiconductor mounting method of the present invention will be described based on specific embodiments.
(Embodiment 1)
FIG. 1 shows a mounting process according to the semiconductor mounting method of the present invention.

ここでは、端子部にバンプが形成された第１の部材としての半導体チップ１０を、第２の部材としての基板１１の端子部５へ実装する場合を示している。
図１（ａ）に示した半導体チップ１０は、端子部３に熱収縮性樹脂による筒体１２（高さは４〜５μｍ程度）を形成し、さらに筒体１２の内側から前記端子部３にかけてハンダメッキが施されて凹部がハンダ１３で満たされている。 Here, the case where the semiconductor chip 10 as the first member having the bump formed in the terminal portion is mounted on the terminal portion 5 of the substrate 11 as the second member is shown.
In the semiconductor chip 10 shown in FIG. 1A, a cylindrical body 12 (height is about 4 to 5 μm) made of a heat-shrinkable resin is formed on the terminal portion 3, and further from the inside of the cylindrical body 12 to the terminal portion 3. Solder plating is applied and the recess is filled with solder 13.

この半導体チップ１０は図２の工程で加工されている。
図２（ａ）では、半導体チップ１０の端子部５の上に熱収縮性樹脂１４をスピンコート法などで塗布する。なお、ここでは端子部３は後工程（ｄ）でのハンダメッキのために、ＴｉまたはＣｕまたはＮｉなどのバリアメタルが予め成膜されている。 The semiconductor chip 10 is processed in the process of FIG.
In FIG. 2A, a heat-shrinkable resin 14 is applied on the terminal portion 5 of the semiconductor chip 10 by a spin coating method or the like. Here, a barrier metal such as Ti, Cu, or Ni is formed in advance on the terminal portion 3 for solder plating in the subsequent step (d).

図２（ｂ）では、塗布された熱収縮性樹脂１４の上に感光性樹脂などでパターンマスク１５を形成する。このパターンマスク１５は前記端子部３の部分に対応して開口１６が形成されている。   In FIG. 2B, a pattern mask 15 is formed on the applied heat-shrinkable resin 14 with a photosensitive resin or the like. The pattern mask 15 has an opening 16 corresponding to the terminal portion 3.

図２（ｃ）では、ウエットエッチ、Ｏ２プラズマによるアッシングにより熱収縮性樹脂１４の一部をエッチング除去する。
図２（ｄ）では、図２（ｃ）で形成された凹部１７の内側と端子部３にかけてハンダ１３をメッキする。 In FIG. 2C, a part of the heat-shrinkable resin 14 is removed by etching by wet etching and ashing using O 2 plasma.
In FIG. 2 (d), the solder 13 is plated over the inside of the recess 17 and the terminal portion 3 formed in FIG. 2 (c).

図２（ｅ）では、ウエットエッチまたは機械的研磨などによってパターンマスク１５と余剰ハンダを除去する。
図２（ｆ）では、隣接する端子部３の間に対応して開口１８が形成されたパターンマスク１９を感光性樹脂などで形成する。 In FIG. 2E, the pattern mask 15 and excess solder are removed by wet etching or mechanical polishing.
In FIG. 2F, a pattern mask 19 having openings 18 correspondingly formed between adjacent terminal portions 3 is formed of a photosensitive resin or the like.

図２（ｇ）では、ウエットエッチ、Ｏ２プラズマによるアッシングにより熱収縮性樹脂１４の一部をエッチング除去した後に、パターンマスク１９を除去する。パターンマスク１９の除去の後は、必要に応じて機械的な研磨を施してもよい。 In FIG. 2G, after partially removing the heat-shrinkable resin 14 by wet etching and ashing with O 2 plasma, the pattern mask 19 is removed. After removing the pattern mask 19, mechanical polishing may be performed as necessary.

このようにして筒体１２が作成された半導体チップ１０を、図１（ｂ）ではハンダ１３が再結晶する温度にまで昇温して熱収縮性樹脂１４が熱収縮するようにアニール処理を実行する。これによって、筒体１２を形成していた熱収縮性樹脂１４が熱収縮して縮径してその高さは１５〜２０μｍ程度に伸長し、ハンダ１３は伸長した筒体１２の端面上に盛り上がって露出する。   The semiconductor chip 10 in which the cylindrical body 12 is thus formed is heated to a temperature at which the solder 13 is recrystallized in FIG. 1B, and annealing treatment is performed so that the heat-shrinkable resin 14 is thermally contracted. To do. As a result, the heat-shrinkable resin 14 forming the cylinder 12 is heat-shrinked and reduced in diameter, and the height is increased to about 15 to 20 μm, and the solder 13 rises on the end surface of the expanded cylinder 12. Exposed.

図１（ｃ）では、半導体チップ１０を反転させて前記基板１１の端子部５に位置合わせした後に、半導体チップ１０を加熱体２０で加熱しながら基板１１の側に押し付ける。
これによって、加熱体２０の加熱で溶融温度以上に昇温した後に降温して前記ハンダ１３を介して半導体チップ１０の端子部３と基板１１の端子部５とが図１（ｄ）に示すようにハンダ付けされる。この図１（ｄ）の状態ではハンダ１３の外側は熱収縮以後の前記熱収縮性樹脂１４の加熱溶融によってコーティングも併せて実現されている。 In FIG. 1C, after the semiconductor chip 10 is inverted and aligned with the terminal portion 5 of the substrate 11, the semiconductor chip 10 is pressed against the substrate 11 while being heated by the heating body 20.
As a result, the temperature of the heating body 20 is raised to the melting temperature or higher after the heating body 20 is heated, and the terminal portion 3 of the semiconductor chip 10 and the terminal portion 5 of the substrate 11 are shown in FIG. Soldered to In the state of FIG. 1D, the outer side of the solder 13 is also coated by heat melting of the heat-shrinkable resin 14 after heat shrinkage.

具体的には、熱収縮性樹脂１４としてはテフロン系のＰＦＡ（収縮温度：３００℃，収縮後耐用温度：２６０℃）を使用し、ハンダとして溶融温度が中温域（１８０℃〜２６０℃）のＳｎ−５Ｓｂ系ハンダ（２４０℃）を使用した場合、図１（ｂ）では収縮温度付近の３００℃まで加熱してアニール処理し、図１（ｃ）（ｄ）では２８０℃〜３００℃の温度で接合する。   Specifically, Teflon-based PFA (shrinking temperature: 300 ° C., post-shrinking durable temperature: 260 ° C.) is used as the heat-shrinkable resin 14, and the melting temperature is in the middle temperature range (180 ° C. to 260 ° C.) as solder. When Sn-5Sb solder (240 ° C.) is used, annealing is performed by heating to 300 ° C. near the shrinkage temperature in FIG. 1B, and temperatures from 280 ° C. to 300 ° C. in FIGS. Join with.

なお、図１（ｂ）のアニール処理で熱収縮性樹脂１４を完全収縮させて処理する場合と、図１（ｂ）のアニール処理では熱収縮性樹脂１４を半収縮させ、図１（ｃ）（ｄ）の接合時に収縮を完了させる温度プロファイルであっても同様に実施できる。   1B, the heat-shrinkable resin 14 is completely shrunk in the annealing process, and in the annealing process of FIG. 1B, the heat-shrinkable resin 14 is half-shrinked, and FIG. The temperature profile that completes the shrinkage at the time of joining in (d) can be similarly implemented.

このように熱収縮性樹脂１４の収縮を積極的に利用してハンダ１３の広がりを確実に制御することができるため、従来のハンダボールによる半導体実装方法ではハンダブリッジによる実装不良が発生していた端子部３のピッチが２０μｍ、隣接した端子部３との隙間が５μｍの狭隣接の場合にも、ハンダブリッジのない良好な接続状態が得られた。   As described above, since the expansion of the solder 13 can be reliably controlled by actively utilizing the shrinkage of the heat-shrinkable resin 14, a mounting failure due to a solder bridge has occurred in the conventional semiconductor mounting method using solder balls. Even in the case where the pitch of the terminal portions 3 is 20 μm and the gap between the adjacent terminal portions 3 is 5 μm, it is possible to obtain a good connection state without a solder bridge.

さらに、従来のハンダボールによる半導体実装方法では、ハンダボールを溶融し凝固させた後に、アンダーフィルなどの処理で樹脂を充填するなどしてハンダ表面をコーティングする工程が必要であったが、この実施の形態では図１（ｄ）の接合完了状態では、凝固したハンダ１３の外側が収縮後の熱収縮性樹脂１４によって封止されて露出しないため、従来のようなアンダーフィル処理工程を必要としない。   Furthermore, the conventional solder ball semiconductor mounting method required a step of coating the surface of the solder by melting and solidifying the solder ball and then filling the resin with a process such as underfill. In the form of FIG. 1 (d), since the outside of the solidified solder 13 is sealed with the heat-shrinkable resin 14 after shrinkage and is not exposed, the conventional underfill processing step is not required. .

また、図１（ａ）では筒体１２を、半導体チップ１０の表面１０ａから端子部３にかけて形成したが、筒体１２の全部を端子部３の範囲内に設けて実施することもできる。
（実施の形態２）
図３は本発明の半導体実装方法による実装工程を示している。 Further, in FIG. 1A, the cylindrical body 12 is formed from the surface 10 a of the semiconductor chip 10 to the terminal portion 3, but the entire cylindrical body 12 may be provided within the range of the terminal portion 3.
(Embodiment 2)
FIG. 3 shows a mounting process according to the semiconductor mounting method of the present invention.

図１（ｂ）アニール処理が完了した状態では筒体１２の全部が端子部３の上に位置していたが、この（実施の形態２）では図３（ｂ）に示したように半導体チップ１０の表面１０ａから端子部３にかけて位置して筒体１２が端子部３の外側を覆うように、例えばアニール処理時の温度プロファイルを設定することによって、図１（ｃ）（ｄ）と同様に図３（ｃ）（ｄ）を実施して図３（ｄ）の接合完了状態において、基板１１の表面１０ａにかけて溶融した熱収縮性樹脂１４が達して端子部５の外側を含んで封止することができる。   In FIG. 1B, the entire cylindrical body 12 is positioned on the terminal portion 3 in the state where the annealing process is completed. In this (Embodiment 2), as shown in FIG. 1C and FIG. 1D, for example, by setting a temperature profile at the time of annealing so that the cylinder 12 covers the outside of the terminal part 3 and is located from the surface 10a of the terminal 10 to the terminal part 3. 3C and 3D, the heat-shrinkable resin 14 that has melted over the surface 10a of the substrate 11 reaches the surface 10a of the substrate 11 and seals including the outside of the terminal portion 5 in the bonding completion state of FIG. be able to.

（実施の形態３）
図４（ａ）（ｂ）はそれぞれ図２（ｆ）（ｇ）の別の例を示している。
図２（ｆ）（ｇ）ではパターンマスク１９を使用して半導体チップ１０の表面１０ａにまで達するまで熱収縮性樹脂１４をアッシングして端子部３ごとに筒体１２を分離したが、これは図４（ａ）に示したように隣接する端子部３に形成した筒体とは少なくとも先端部が分離された溝２１を形成することによっても、図１または図３に示した半導体実装方法を実現できる。 (Embodiment 3)
FIGS. 4A and 4B show other examples of FIGS. 2F and 2G, respectively.
2F and 2G, the pattern mask 19 is used to ash the heat-shrinkable resin 14 until the surface 10a of the semiconductor chip 10 is reached, and the cylindrical body 12 is separated for each terminal portion 3. As shown in FIG. 4A, the semiconductor mounting method shown in FIG. 1 or FIG. 3 can also be achieved by forming a groove 21 having at least a tip portion separated from the cylindrical body formed in the adjacent terminal portion 3. realizable.

また、パターンマスク１９を使用したアッシングによらずに、レーザー光によって熱収縮性樹脂１４をアブレーション効果によって除去して図４（ｂ）に示したように溝２２を形成して、隣接する端子部３に形成した筒体とは少なくとも先端部が分離された形状に形成することによっても、図１または図３に示した半導体実装方法を実現できる。   In addition, without using ashing using the pattern mask 19, the heat-shrinkable resin 14 is removed by the ablation effect by laser light to form a groove 22 as shown in FIG. The semiconductor mounting method shown in FIG. 1 or FIG. 3 can also be realized by forming the cylindrical body formed in 3 into a shape in which at least the tip is separated.

（実施の形態４）
図５は本発明の半導体実装方法による別の実装工程を示している。
半導体チップ１０を基板１１に実装するに際して、図１では半導体チップ１０の端子部３に筒体１２を形成したが、図５では基板１１の端子部５に熱収縮性樹脂１４の筒体１２を形成している点だけが異なっている。 (Embodiment 4)
FIG. 5 shows another mounting process according to the semiconductor mounting method of the present invention.
In mounting the semiconductor chip 10 on the substrate 11, the cylindrical body 12 is formed on the terminal portion 3 of the semiconductor chip 10 in FIG. 1, but in FIG. 5, the cylindrical body 12 of the heat-shrinkable resin 14 is mounted on the terminal portion 5 of the substrate 11. Only the formation is different.

図５（ａ）では、基板１１の端子部５に熱収縮性樹脂による筒体１２を形成し、筒体１２の内側から前記端子部５にかけてハンダメッキが施されて凹部がハンダ１３で満たされている。   In FIG. 5A, a cylindrical body 12 made of heat-shrinkable resin is formed on the terminal portion 5 of the substrate 11, solder plating is performed from the inside of the cylindrical body 12 to the terminal portion 5, and the concave portion is filled with the solder 13. ing.

図５（ｂ）ではハンダ１３が再結晶する温度にまで昇温したアニール処理を実行する。
図５（ｃ）（ｄ）では、半導体チップ１０を前記基板１１の端子部５に位置合わせした後に、加熱体２０で加熱しながら基板１１の側に押し付け、加熱体２０の加熱で溶融温度以上に昇温して図１（ｄ）と同じハンダ付け完了状態を得る。 In FIG. 5B, an annealing process is performed in which the temperature is raised to a temperature at which the solder 13 is recrystallized.
5C and 5D, after the semiconductor chip 10 is aligned with the terminal portion 5 of the substrate 11, the semiconductor chip 10 is pressed against the substrate 11 side while being heated by the heating body 20, and the heating body 20 is heated to reach the melting temperature or higher. To obtain the same soldering completion state as in FIG.

なお、基板１１の端子部５の表面１１ａから端子部５にかけて熱収縮性樹脂１４の筒体１２を形成して実施した場合であっても図３（ｄ）と同じハンダ付け完了状態を得ることができる。   In addition, even if it is a case where it implements by forming the cylinder 12 of the heat-shrinkable resin 14 from the surface 11a of the terminal part 5 of the board | substrate 11 to the terminal part 5, the same soldering completion state as FIG.3 (d) is obtained. Can do.

上記の各実施の形態では、アニール工程は筒体１２を上側にして実行したが、筒体１２を下側にして実行した場合であってもハンダ１３の濡れ性が重力よりも大きいために溶けたハンダは落下しないので、姿勢は何れでも実施できる。   In each of the above-described embodiments, the annealing process is performed with the cylindrical body 12 facing upward. However, even when the annealing process is performed with the cylindrical body 12 facing downward, the solder 13 melts because the wettability of the solder 13 is greater than gravity. Since the solder does not fall, any posture can be implemented.

上記の各実施の形態では、第１，第２の部材の一方が半導体チップで他方が基板の場合を例に挙げて説明したが、両方が半導体チップまたは基板の場合であっても同様に実施できる。   In each of the above-described embodiments, the case where one of the first and second members is a semiconductor chip and the other is a substrate has been described as an example. it can.

本発明は各種電子機器の実装の高密度化を実現して、電気機器の小型化に寄与できる。   The present invention can realize high-density mounting of various electronic devices and contribute to downsizing of electrical devices.

本発明の（実施の形態１）の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 1) of this invention 同実施の形態の要部の工程図Process drawing of the main part of the same embodiment 本発明の（実施の形態２）の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 2) of this invention 本発明の（実施の形態３）の半導体実装方法の要部の断面図Sectional drawing of the principal part of the semiconductor mounting method of (Embodiment 3) of this invention 本発明の（実施の形態４）の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 4) of this invention 従来のハンダボールを使用した実装方法の工程図Process diagram of conventional mounting method using solder balls 同従来例の実装方法で狭隣接の場合の工程図Process diagram in the case of narrow adjacent by the mounting method of the conventional example 別の従来例の半導体実装方法の工程図Process diagram of another conventional semiconductor mounting method

符号の説明Explanation of symbols

３ 半導体チップ１０の端子部
５ 基板の端子部
１０ 半導体チップ（第１の部材）
１１ 基板（第２の部材）
１２ 筒体
１３ ハンダ
１４ 熱収縮性樹脂 3 Terminal portion of semiconductor chip 10 5 Terminal portion 10 of substrate Semiconductor chip (first member)
11 Substrate (second member)
12 cylinder 13 solder 14 heat shrinkable resin

Claims (4)

端子部にバンプが形成された第１の部材を第２の部材の端子部へ実装するに際し、
第１の部材の端子部に熱収縮性樹脂による筒体を形成し、
前記筒体の内側から第１の部材の前記端子部にかけてハンダをメッキし、
前記筒体を熱収縮させ、
前記熱収縮によって筒体の端面から前記ハンダが盛り上がった状態で前記第２の部材の端子部に第１の部材を押し付けて前記ハンダの溶融温度以上に昇温した後に降温して前記ハンダを介して第１の部材の端子部と第２の部材の端子部とをハンダ付けするとともに、
前記筒体を、第１の部材の表面から第１の部材の端子部にかけて形成し、さらに、第１の部材の端子部と第２の部材の端子部とを前記ハンダ付けした状態では、加熱溶融もしくは熱収縮した前記筒体によって第２の基板の端子部から第２の基板の表面にかけて封止する
半導体実装方法。 When mounting the first member having the bump formed on the terminal portion to the terminal portion of the second member,
Forming a cylindrical body of heat-shrinkable resin on the terminal portion of the first member;
Solder is plated from the inside of the cylindrical body to the terminal portion of the first member,
Heat shrinking the cylinder,
The first member is pressed against the terminal portion of the second member in a state where the solder is raised from the end surface of the cylindrical body due to the thermal contraction, the temperature is raised to the melting temperature of the solder, the temperature is lowered, and the solder is passed through the solder. And soldering the terminal part of the first member and the terminal part of the second member,
In the state where the cylindrical body is formed from the surface of the first member to the terminal portion of the first member and the terminal portion of the first member and the terminal portion of the second member are soldered, heating is performed. that abolish sealed from the terminal portion of the second substrate toward the surface of the second substrate by said cylindrical body which is melted or heat-shrinkable
Semiconductors implementation. 第１の部材の端子部ごとに分離して前記筒体を形成する
請求項１記載の半導体実装方法。 The semiconductor mounting method according to claim 1, wherein the cylindrical body is formed separately for each terminal portion of the first member. 第１の部材の端子部に形成した前記筒体を、隣接する端子部に形成した筒体とは少なくとも先端部が分離された形状に形成する
請求項１記載の半導体実装方法。 The semiconductor mounting method according to claim 1, wherein the cylindrical body formed on the terminal portion of the first member is formed in a shape in which at least a tip portion is separated from a cylindrical body formed on the adjacent terminal portion. 端子部にバンプが形成された第１の部材を第２の部材の端子部へ実装した構造体であって、
熱収縮した熱収縮性樹脂によって形成された筒状で内部にハンダが入れられた筒体を前記第１の部材の端子部に設け、
前記第１の部材の端子部と第２の部材の端子部とを前記筒体を介してハンダ付けして、加熱溶融もしくは熱収縮した前記筒体によって第２の基板の端子部から第２の基板の表面にかけて封止されている
構造体。 A structure in which a first member having a bump formed on a terminal portion is mounted on a terminal portion of a second member,
A cylindrical body formed of heat-shrinkable heat-shrinkable resin and soldered inside is provided on the terminal portion of the first member,
The terminal part of the first member and the terminal part of the second member are soldered via the cylinder, and the second body is secondly connected to the second board by the cylinder that has been heated, melted, or thermally contracted. A structure that is sealed over the surface of the substrate .
JP2005087379A 2005-03-25 2005-03-25 Semiconductor mounting method Expired - Fee Related JP4596946B2 (en)

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