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JP4606181B2 - Multilayer wiring board - Google Patents
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JP4606181B2 - Multilayer wiring board - Google Patents

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JP4606181B2
JP4606181B2 JP2005009154A JP2005009154A JP4606181B2 JP 4606181 B2 JP4606181 B2 JP 4606181B2 JP 2005009154 A JP2005009154 A JP 2005009154A JP 2005009154 A JP2005009154 A JP 2005009154A JP 4606181 B2 JP4606181 B2 JP 4606181B2
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layer
wiring board
multilayer wiring
insulating
adhesive layer
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JP2006196832A (en
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匡史 宮脇
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Kyocera Corp
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Description

本発明は多層配線基板に関し、より詳細には半導体集積回路素子を収容するための半導体素子収納用パッケージ等の電子部品収納用パッケージや、半導体集積回路等の電気的な検査をするためのプローブカード等に使用される多層配線基板に関するものである。   The present invention relates to a multilayer wiring board, and more specifically, a package for storing an electronic component such as a package for housing a semiconductor element for housing a semiconductor integrated circuit element, or a probe card for performing an electrical inspection of a semiconductor integrated circuit or the like. The present invention relates to a multilayer wiring board used for, for example.

近年、半導体集積回路は半導体素子の高集積化および処理信号数の増加によって、半導体基板上に形成される端子数が増加するとともに端子の狭ピッチ化が進んでいる。これにより、半導体集積回路素子を収容する半導体素子収納用パッケージの接続端子や、半導体集積回路の電気的な検査を行なうプローブカードのプローブも狭ピッチ化が要求されている。   2. Description of the Related Art In recent years, in semiconductor integrated circuits, the number of terminals formed on a semiconductor substrate has increased and the pitch of terminals has been reduced due to higher integration of semiconductor elements and an increase in the number of processing signals. As a result, the pitch of the connection terminals of the package for housing the semiconductor element that houses the semiconductor integrated circuit element and the probe of the probe card that performs electrical inspection of the semiconductor integrated circuit is also required.

この狭ピッチ化の要求に対して、半導体素子収納用パッケージにおいては半導体素子の実装形態がワイヤボンディング接続からフリップチップ接続へ、またプローブカードは、カンチレバー方式のものからニードル状のプローブを細密に格子状に配置したものへと移り変わってきている。   In response to this demand for narrow pitches, in the package for housing semiconductor devices, the mounting form of the semiconductor devices is changed from wire bonding connection to flip chip connection, and the probe card is a cantilever type, and needle-like probes are finely latticed. It has changed to something arranged in a shape.

また、それら半導体素子収納用パッケージやプローブカードに使われる多層配線基板の構成は、ガラス繊維から成る基材に有機樹脂を含浸硬化させた絶縁層に銅箔をパターン加工した配線導体層を形成して成るプリント配線板から、配線導体層の狭ピッチ化に優れるとともに、配線導体層を細密な格子状に配置することが可能な、基板の上面に薄膜の絶縁層と配線導体層とから成る多層配線部を形成したビルドアップ方式の多層配線基板へと移り変わってきている。   In addition, the structure of the multilayer wiring board used in the semiconductor element storage package and the probe card is formed by forming a wiring conductor layer obtained by patterning a copper foil on an insulating layer obtained by impregnating and curing an organic resin on a substrate made of glass fiber. Multi-layer consisting of a thin insulating layer and a wiring conductor layer on the top surface of the substrate, which is excellent in narrowing the pitch of the wiring conductor layer and can be arranged in a fine lattice pattern. It is changing to a build-up type multilayer wiring board in which a wiring part is formed.

かかるビルドアップ方式の多層配線基板は、基板の上面に、ポリイミド樹脂等から成り、カーテンコート法やスピンコート法等によって樹脂の前駆体を塗布し加熱硬化させることによって形成される絶縁層と、銅やアルミニウム等の金属から成り、めっき法や気相成膜法等の薄膜形成技術およびフォトリソグラフィ技術を採用することによって形成される配線導体層とを交互に多層に積層させた構造となっている。
特開平11−163520号公報 特開平11−38044号公報
Such a build-up type multilayer wiring board is made of polyimide resin or the like on the upper surface of the board, and an insulating layer formed by applying a resin precursor by a curtain coating method or a spin coating method and heat curing, and a copper It consists of metal such as aluminum and aluminum, and has a structure in which wiring conductor layers formed by adopting thin film formation technology such as plating method and vapor deposition method and photolithography technology are alternately laminated in multiple layers .
JP 11-163520 A Japanese Patent Laid-Open No. 11-38044

しかしながら、基板の上面にポリイミド樹脂等から成る絶縁層が多層に積層された多層配線基板では、ポリイミド樹脂を加熱硬化させて接着させるか、または加熱しながら加圧して接着させ、冷却すると、基板との熱膨張率の違いから多層配線基板の表面が凹形状となる反りが発生し、半導体素子等のチップをバンプにより実装する際、基板の反りによる高さばらつきのためにうまく接合できないという問題があった。   However, in a multilayer wiring board in which an insulating layer made of polyimide resin or the like is laminated in multiple layers on the upper surface of the substrate, the polyimide resin is cured by heating or bonded or heated and pressurized and cooled. Due to the difference in thermal expansion coefficient, the surface of the multilayer wiring board has a concave warp, and when a chip such as a semiconductor element is mounted with a bump, it cannot be joined well due to the height variation due to the warp of the board. there were.

また、基板に発生する反りを低減するために、基板の裏側に基板の上面と同様にポリイミド樹脂等から成る絶縁層を同じ層数で積層し、上下同じような樹脂構造にすることによって反りを防止しようとすると、チップから発生する熱の熱放散性が下がるという問題があった。   In addition, in order to reduce the warpage generated in the substrate, the insulating layer made of polyimide resin or the like is laminated on the back side of the substrate in the same manner as the upper surface of the substrate, and the warpage is reduced by forming the same resin structure in the upper and lower sides. When trying to prevent it, there is a problem that the heat dissipation of the heat generated from the chip is lowered.

本発明は上記のような背景技術における問題点に鑑みてなされたものであり、その目的は、多層配線基板の配線導体層の実装信頼性および接続信頼性が高く、配線導体層の狭ピッチ化に対応することができる多層配線基板を提供することにある。   The present invention has been made in view of the problems in the background art as described above, and the object thereof is high mounting reliability and connection reliability of the wiring conductor layer of the multilayer wiring board, and a narrow pitch of the wiring conductor layer. It is an object of the present invention to provide a multilayer wiring board that can cope with the above.

本発明の多層配線基板は、絶縁フィルム層と絶縁性接着剤層とが積層されて成る絶縁層と、配線導体層とが交互に複数層積層されて成る多層配線基板において、前記絶縁層に絶縁性接着剤層の非形成部を複数層に設けており、前記絶縁層の積層方向に隣接する前記非形成部同士を平面透視して重ならないようにずらして配置したことを特徴とする。
The multilayer wiring board of the present invention is an insulating layer formed by laminating an insulating film layer and an insulating adhesive layer and a plurality of wiring conductor layers alternately, and is insulated from the insulating layer. The non-forming part of the adhesive layer is provided in a plurality of layers, and the non-forming parts adjacent to each other in the stacking direction of the insulating layers are arranged so as not to overlap each other in a plan view .

本発明の多層配線基板において、好ましくは、前記絶縁性接着剤層の中央部から外周部に向かって前記非形成部の占有面積を漸次大きくしたことを特徴とする。   The multilayer wiring board of the present invention is preferably characterized in that the area occupied by the non-formed part is gradually increased from the central part to the outer peripheral part of the insulating adhesive layer.

本発明の多層配線基板によれば、絶縁フィルム層と絶縁性接着剤層とが積層されて成る絶縁層と、配線導体層とが交互に複数層積層されて成る多層配線基板において、絶縁層に絶縁性接着剤層の非形成部を設けたことにより、熱膨張係数の大きい絶縁性接着剤層の膨張や収縮を非形成部で吸収して絶縁性接着剤層全体としての寸法変化を小さくすることができ、熱膨張差により発生する絶縁性接着剤層からの引っ張り応力を減らすことができる。   According to the multilayer wiring board of the present invention, in a multilayer wiring board in which an insulating layer formed by laminating an insulating film layer and an insulating adhesive layer and a plurality of wiring conductor layers are alternately laminated, By providing the non-forming part of the insulating adhesive layer, the non-forming part absorbs the expansion and contraction of the insulating adhesive layer having a large thermal expansion coefficient, thereby reducing the dimensional change of the insulating adhesive layer as a whole. The tensile stress from the insulating adhesive layer generated by the difference in thermal expansion can be reduced.

すなわち、熱膨張差により発生する多層配線基板の表面が凹形状となる反りを低減することができ、半導体素子などのチップをバンプにより実装する際、基板反りによる高さばらつきを低減することができることで、バンプの接続信頼性を高めることができる。   That is, it is possible to reduce the warpage that the surface of the multilayer wiring board that is generated due to the difference in thermal expansion becomes a concave shape, and it is possible to reduce the height variation due to the board warpage when mounting a chip such as a semiconductor element with a bump. Thus, the connection reliability of the bumps can be improved.

本発明の多層配線基板によれば、好ましくは、絶縁性接着剤層の中央部から外周部に向かって非形成部の占有面積を漸次大きくしたことにより、基板の中心部から角部にかけて大きくなる絶縁性接着剤層の熱収縮による引っ張り応力をより有効に減らすことができる。よって、多層配線基板の反りをより低減できるとともに多層配線基板の最表層の中央部に半導体素子などのチップをバンプにより実装する際、十分に圧力を加えることができる。   According to the multilayer wiring board of the present invention, preferably, the area occupied by the non-formed part is gradually increased from the central part to the outer peripheral part of the insulating adhesive layer, so that it increases from the central part to the corner part of the board. The tensile stress due to heat shrinkage of the insulating adhesive layer can be reduced more effectively. Therefore, the warpage of the multilayer wiring board can be further reduced, and a sufficient pressure can be applied when a chip such as a semiconductor element is mounted on the central portion of the outermost layer of the multilayer wiring board by bumps.

本発明の多層配線基板によれば、縁層の積層方向に隣接する非形成部同士を平面透視して重ならないようにずらして配置したことから、熱膨張差により発生する反りの応力をさらに低減することができる。
According to the multilayer wiring board of the present invention, the non-formation portions adjacent in the stacking direction of the insulation layer since the staggered so as not to overlap in a plan perspective, further stress warping caused by thermal expansion difference Can be reduced.

すなわち、絶縁層の積層方向に隣接する非形成部同士を平面透視して重ねた場合、下の層で発生した引っ張り応力に、さらに上の層で発生した引っ張り応力が加わることとなって基板の反りが大きくなるが、本発明のように絶縁層の積層方向に隣接する非形成部同士を平面透視して重ならないように配置することで引っ張り応力を各層毎の応力として分散させることができ、最終的に多層配線基板に加わる全引っ張り応力を低減することができる。また、絶縁層の積層方向に隣接する非形成部同士が重ならないことで、表層の平坦性を向上させることができる。   That is, when the non-formed portions adjacent to each other in the stacking direction of the insulating layers are overlapped with each other in plan view, the tensile stress generated in the lower layer is added to the tensile stress generated in the lower layer. Although the warpage is large, it is possible to disperse the tensile stress as the stress for each layer by arranging the non-formed portions adjacent to each other in the stacking direction of the insulating layers so as not to overlap each other as in the present invention, Ultimately, the total tensile stress applied to the multilayer wiring board can be reduced. Moreover, the non-formation part adjacent to the lamination direction of an insulating layer does not overlap, but the flatness of a surface layer can be improved.

よって、樹脂の絶縁層と配線導体層とを積み重ねる多層配線基板の構造にしても、多層配線基板の配線導体層の実装信頼性および接続信頼性が高く、配線導体層の狭ピッチ化に対応できる多層配線基板となる。   Therefore, even in a multilayer wiring board structure in which a resin insulating layer and a wiring conductor layer are stacked, the mounting reliability and the connection reliability of the wiring conductor layer of the multilayer wiring board are high, and the pitch of the wiring conductor layer can be reduced. It becomes a multilayer wiring board.

以下、図面に基づいて本発明の多層配線基板を詳細に説明する。   Hereinafter, a multilayer wiring board of the present invention will be described in detail with reference to the drawings.

図1は本発明の多層配線基板の実施の形態の一例を示す縦断面図である。図2,図3は本発明の多層配線基板の実施の形態の各種例における絶縁性接着剤層部分の横断面図である。図4(A),図5(A)は本発明の多層配線基板の実施の形態の各種例を示す縦断面図であり、図4(B)および図5(B)はそれぞれ図4(A)および図5(A)の多層配線基板のX−X線での横断面図、図4(C)および図5(C)はそれぞれ図4(A)および図5(A)の多層配線基板のY−Y線での横断面図である。   FIG. 1 is a longitudinal sectional view showing an example of an embodiment of a multilayer wiring board according to the present invention. 2 and 3 are cross-sectional views of an insulating adhesive layer portion in various examples of embodiments of the multilayer wiring board of the present invention. 4A and 5A are longitudinal sectional views showing various examples of the embodiment of the multilayer wiring board of the present invention. FIGS. 4B and 5B are respectively shown in FIG. ) And FIG. 5A are cross-sectional views taken along the line XX of FIG. 4C, and FIG. 5C are the multilayer wiring boards of FIG. 4A and FIG. 5A, respectively. It is a cross-sectional view in the YY line.

これらの図において、1は基板、2は絶縁層、3は配線導体層、4は絶縁層2の一部としての絶縁フィルム層、5は絶縁層2の一部としての絶縁性接着剤層、6は貫通導体、7は貫通孔、8は絶縁性接着剤層の非形成部である。   In these drawings, 1 is a substrate, 2 is an insulating layer, 3 is a wiring conductor layer, 4 is an insulating film layer as a part of the insulating layer 2, 5 is an insulating adhesive layer as a part of the insulating layer 2, 6 is a through conductor, 7 is a through hole, and 8 is a non-formed portion of the insulating adhesive layer.

基板1はその上面に、絶縁層2(絶縁フィルム層4と絶縁性接着剤層5とから成る)と配線導体層3とを多層に積層した多層配線部が配設されており、この多層配線部を支持する支持体として機能する。   On the upper surface of the substrate 1, a multilayer wiring portion in which an insulating layer 2 (consisting of an insulating film layer 4 and an insulating adhesive layer 5) and a wiring conductor layer 3 are laminated in multiple layers is disposed. It functions as a support that supports the part.

基板1は、酸化アルミニウム質焼結体,ムライト質焼結体等の酸化物系セラミックス、表面に酸化物膜を有する窒化アルミニウム質焼結体,炭化珪素質焼結体等の非酸化物系セラミックス、ガラス繊維から成る基材にエポキシ樹脂を含浸させたガラスエポキシ樹脂、あるいはガラス繊維から成る基材にビスマレイミドトリアジン樹脂を含浸させたもの等の電気絶縁材料で形成されている。   The substrate 1 is made of an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, an aluminum nitride sintered body having an oxide film on its surface, or a non-oxide ceramic such as a silicon carbide sintered body. It is formed of an electrically insulating material such as a glass epoxy resin obtained by impregnating a glass fiber base material with an epoxy resin, or a glass fiber base material impregnated with a bismaleimide triazine resin.

基板1が、例えば、酸化アルミニウム質焼結体で形成されている場合には、アルミナ,シリカ,カルシア,マグネシア等の原料粉末に適当な有機溶剤,溶媒を添加混合して泥漿状となすとともにこれをドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート(セラミック生シート)を形成し、しかる後、このセラミックグリーンシートに適当な打ち抜き加工を施し、所定形状となすとともに高温(約1600℃)で焼成することによって製作される。あるいは、アルミナ等の原料粉末に適当な有機溶剤,溶媒を添加混合して原料粉末を調製するとともにこの原料粉末をプレス成形機によって所定形状に成形し、最後にこの成形体を高温(約1600℃)で焼成することによって製作される。また、ガラスエポキシ樹脂から成る場合は、例えばガラス繊維から成る基材にエポキシ樹脂の前駆体を含浸させ、このエポキシ樹脂前駆体を所定の温度で熱硬化させることによって製作される。   When the substrate 1 is formed of, for example, an aluminum oxide sintered body, an appropriate organic solvent or solvent is added to and mixed with raw material powders such as alumina, silica, calcia, and magnesia to form a slurry. A ceramic green sheet (ceramic green sheet) is formed by adopting a doctor blade method or a calender roll method, and thereafter, the ceramic green sheet is appropriately punched to obtain a predetermined shape and a high temperature (about 1600 ° C.). ). Alternatively, a raw material powder is prepared by adding and mixing an appropriate organic solvent and solvent to a raw material powder such as alumina, and the raw material powder is formed into a predetermined shape by a press molding machine. Finally, the compact is heated to a high temperature (about 1600 ° C. ). Moreover, when it consists of glass epoxy resins, it manufactures, for example by impregnating the base material which consists of glass fiber with the precursor of an epoxy resin, and thermosetting this epoxy resin precursor at predetermined temperature.

また、基板1には、その上面に複数の絶縁層2と配線導体層3とを多層に積層した多層配線部が配設されている。絶縁層2は上下に位置する配線導体層3を電気的に絶縁し、配線導体層3は電気信号を伝達するための伝達路として機能する。   The substrate 1 is provided with a multilayer wiring portion in which a plurality of insulating layers 2 and wiring conductor layers 3 are laminated in multiple layers on the upper surface thereof. The insulating layer 2 electrically insulates the wiring conductor layer 3 positioned above and below, and the wiring conductor layer 3 functions as a transmission path for transmitting an electrical signal.

多層配線部の絶縁層2は、例えば、絶縁フィルム層4と絶縁性接着剤層5とから構成されており、絶縁フィルム層4はポリイミド樹脂,ポリフェニレンサルファイド樹脂,全芳香族ポリエステル樹脂,フッ素樹脂等から成る。また、絶縁性接着剤層5はシロキサン変性ポリアミドイミド樹脂,シロキサン変性ポリイミド樹脂,ポリイミド樹脂,ビスマレイミドトリアジン樹脂等から成る。   The insulating layer 2 of the multilayer wiring portion is composed of, for example, an insulating film layer 4 and an insulating adhesive layer 5, and the insulating film layer 4 is made of polyimide resin, polyphenylene sulfide resin, wholly aromatic polyester resin, fluororesin, or the like. Consists of. The insulating adhesive layer 5 is made of siloxane-modified polyamideimide resin, siloxane-modified polyimide resin, polyimide resin, bismaleimide triazine resin, or the like.

絶縁層2は、例えば、まず12.5〜50μm程度の絶縁フィルムに絶縁性接着剤をドクターブレード法等を用いて乾燥厚みで5〜20μm程度に塗布し乾燥させたものを準備し、この絶縁フィルム層4を基板1や下層の絶縁層2の上面の間に絶縁性接着剤層5が配されるように積み重ね、これを加熱プレス装置を用いて加熱加圧し接着することによって形成される。   The insulating layer 2 is prepared, for example, by first applying an insulating adhesive to an insulating film of about 12.5 to 50 μm to a dry thickness of about 5 to 20 μm using a doctor blade method or the like, and drying the insulating film. It is formed by stacking the film layer 4 so that the insulating adhesive layer 5 is disposed between the upper surfaces of the substrate 1 and the lower insulating layer 2, and heating and pressurizing the film layer 4 using a hot press device.

また、本発明の非形成部を有した絶縁層2については、任意の形状にカッティングや型抜き等により絶縁性接着剤5の非形成部8を形成して絶縁フィルム4と絶縁層2の間に配し積層して絶縁層2を形成するが、絶縁性接着剤5の非形成部8は、熱収縮により発生する引っ張り応力が基板の中心部から角部にかけて大きくなるので、図2、3のように基板の角部および外周部に非形成部8を多く設ける方が良い。また、基板の中央部は半導体素子等のチップを実装する際に応力を十分に加えられるように非形成部の占有面積を小さくするか、または非形成部を設けない方が良い。
Also, the insulating layer 2 having a non-formation portion of the present invention, the absolute Enfu Irumu layer 4 to form a non-formation portion 8 of the insulating adhesive layer 5 by cutting or stamping or the like into a desired shape insulating The insulating layer 2 is formed by being disposed between the layers 2 and laminated. However, in the non-formed portion 8 of the insulating adhesive layer 5, the tensile stress generated by thermal contraction increases from the center portion to the corner portion of the substrate. 2 and 3, it is preferable to provide a large number of non-formed portions 8 at the corners and the outer periphery of the substrate. In addition, it is preferable to reduce the occupied area of the non-formed part or not to provide the non-formed part so that stress is sufficiently applied to the central part of the substrate when mounting a chip such as a semiconductor element.

また、非形成部8を図3のような円状の形状や複雑な形状にする場合や、図4,5のような上下の重なりの精度を向上させて形成する場合は、絶縁層2の上に絶縁性接着剤5を加熱プレス装置により仮積層した後、フォトリソグラフィ法を用いて非形成部8となる部分以外を覆うようにレジストパターンを形成した後、ケミカルエッチング法やドライエッチング法等にて除去することにより非形成部8が形成される。その後、レジストパターンを除去し、絶縁フィルム4を積み重ねて加熱プレス装置により加熱加圧し接着することで非形成部8を有した絶縁層2が形成される。
Further, when the non-formed portion 8 has a circular shape or a complicated shape as shown in FIG. 3 or is formed with improved accuracy of vertical overlap as shown in FIGS. After the insulating adhesive layer 5 is temporarily laminated by a hot press apparatus, a resist pattern is formed so as to cover the portion other than the non-formed portion 8 using a photolithography method, and then a chemical etching method or a dry etching method is performed. The non-formation part 8 is formed by removing by etc. Thereafter, the resist pattern is removed, absolute Enfu Irumu layer 4 insulating layer 2 having a non-formation portion 8 by heat and pressure bonded by heat pressing apparatus stacked is formed.

図4(B),(C)や、図5の(B),(C)のような形状に絶縁性接着剤層5の非形成部8を加工し、図4(A)や図5(A)のように積層すると積層方向(上下方向)に絶縁性接着剤層5の隣接する非形成部同士が重ならないようにずらして配置したことにより、熱収縮の際に発生する引っ張り応力が各層毎の応力として分散させることができ、最終的に基板にかかる全引っ張り応力を低減することができる。さらに、上下方向に隣接する非形成部同士が重ならないことで、表層の平坦性を向上させることもできる。
The non-forming portion 8 of the insulating adhesive layer 5 is processed into a shape as shown in FIGS. 4B and 5C and FIGS. 5B and 5C, and FIGS. When the layers are stacked as in A), the adjacent non-formed portions of the insulating adhesive layer 5 are arranged so as not to overlap each other in the stacking direction (vertical direction), so that the tensile stress generated at the time of thermal shrinkage is different for each layer. Each stress can be dispersed, and the total tensile stress applied to the substrate can be finally reduced. Furthermore, since the non-formed portions which are adjacent in the vertical direction do not overlap, thereby improving the surface flatness.

このように非形成部8を有した絶縁層2を積層して多層配線基板を作製することにより、加熱プレス装置により加熱加圧し接着した後、基板1と絶縁性接着剤5の熱膨張差により発生する熱収縮の差による引っ張り応力を減らすことで凹形状の反りを低減することができ、チップをバンプにより実装する際、多層配線基板の反りによる高さばらつきを低減することができることで、バンプの接続信頼性を高めることができる。
Thus, by laminating the insulating layer 2 having the non-formed portion 8 to produce a multilayer wiring board, after being heated and pressed by a heating press device and bonded, the thermal expansion difference between the substrate 1 and the insulating adhesive layer 5 By reducing the tensile stress due to the difference in thermal shrinkage caused by the concave warpage can be reduced, and when mounting the chip with bumps, the height variation due to the warpage of the multilayer wiring board can be reduced, Bump connection reliability can be improved.

これらに使われる絶縁フィルム層4と絶縁性接着剤層5との組み合わせとしては、例えば、絶縁フィルム層4をポリイミド樹脂とし、絶縁性接着剤層5をシロキサン変性ポリアミドイミド樹脂とする組み合わせがある。この組み合わせによれば、シロキサン変性ポリアミドイミド樹脂とポリイミド樹脂との接着性も良好であり、かつ耐熱性が高いものであるため、これらにより形成した多層配線基板をプリント基板等に実装する際の耐半田耐熱性等が良好なものとなる。   As a combination of the insulating film layer 4 and the insulating adhesive layer 5 used for these, for example, there is a combination in which the insulating film layer 4 is a polyimide resin and the insulating adhesive layer 5 is a siloxane-modified polyamideimide resin. According to this combination, the adhesion between the siloxane-modified polyamideimide resin and the polyimide resin is good and the heat resistance is high, so that the multi-layer wiring board formed by these is resistant to being mounted on a printed board or the like. Good solder heat resistance and the like.

また、より耐熱性が高い組み合わせとしては、絶縁フィルム層4をポリイミド樹脂とし、絶縁性接着剤層5を絶縁フィルム層4よりも融点が低い熱可塑性のポリイミド樹脂としておくのがよい。この組み合わせの場合には、耐熱性が高いものになるとともに、絶縁フィルム層4と絶縁性接着剤層5の線膨張係数差を小さくできるための線膨張係数の差による応力を低くすることができ、これにより、配線導体層3と貫通導体6との界面における剥離を生じる応力を小さくすることができる。また、多層配線基板の全体の反りを低減することができるようになることにより、その表面に実装される半導体集積回路素子の端子の狭ピッチ化にもよりよく対応することができるような多層配線基板にすることができる。   As a combination with higher heat resistance, it is preferable to use the insulating film layer 4 as a polyimide resin and the insulating adhesive layer 5 as a thermoplastic polyimide resin having a melting point lower than that of the insulating film layer 4. In the case of this combination, the heat resistance is high and the stress due to the difference in linear expansion coefficient for reducing the difference in linear expansion coefficient between the insulating film layer 4 and the insulating adhesive layer 5 can be reduced. As a result, the stress that causes separation at the interface between the wiring conductor layer 3 and the through conductor 6 can be reduced. In addition, since it becomes possible to reduce the overall warpage of the multilayer wiring board, the multilayer wiring can better cope with the narrow pitch of the terminals of the semiconductor integrated circuit element mounted on the surface thereof. It can be a substrate.

さらに、各絶縁層2には表面に配線導体層3が配設されるとともに、絶縁層2を挟んで上下に位置する配線導体層3同士を電気的に接続するため、その絶縁層2に設けた貫通孔7に貫通導体6が埋設されている。これら配線導体層3および貫通導体6は、銅,金,アルミニウム,ニッケル,クロム,モリブデン,チタンおよびそれらの合金等の金属材料をスパッタリング法,蒸着法,めっき法等の薄膜形成技術を採用することによって形成することができる。   Further, each insulating layer 2 is provided with a wiring conductor layer 3 on the surface, and is provided on the insulating layer 2 in order to electrically connect the wiring conductor layers 3 positioned above and below the insulating layer 2. A through conductor 6 is embedded in the through hole 7. The wiring conductor layer 3 and the through conductor 6 employ a thin film forming technique such as sputtering, vapor deposition, plating, etc., of a metal material such as copper, gold, aluminum, nickel, chromium, molybdenum, titanium, and alloys thereof. Can be formed.

貫通導体6は配線導体層3と別々に形成してもよいが、これらは同時に形成した方が、工程数を少なくできる点で好ましいものとなるとともに、両者の電気的な接続信頼性の点でも良好なものとなる。また、配線導体層3と貫通導体6とを一体的に形成する場合には、それぞれを所望の厚みに調整してめっき膜で形成することができるように、主として電解めっき法を用いて形成しておくのがよい。   The through conductors 6 may be formed separately from the wiring conductor layer 3, but it is preferable that these are formed at the same time in that the number of steps can be reduced, and also in terms of reliability of electrical connection between them. It will be good. In addition, when the wiring conductor layer 3 and the through conductor 6 are integrally formed, the wiring conductor layer 3 and the through conductor 6 are mainly formed by using an electrolytic plating method so that each of the wiring conductor layer 3 and the through conductor 6 can be formed to have a desired thickness. It is good to keep.

配線導体層3および貫通導体6の形成方法は、例えば、まず絶縁層2の表面に貫通導体6用の貫通孔7を形成する。貫通孔7は、例えばレーザを使い、所定位置の絶縁層2を除去することにより形成される。特に、貫通孔7の開口の径が小さな場合は、貫通孔7の内壁面の角度をコントロールすることが容易で貫通孔7の内壁面が滑らかに加工される紫外線レーザ等で形成することが望ましい。   As a method for forming the wiring conductor layer 3 and the through conductor 6, for example, first, the through hole 7 for the through conductor 6 is formed on the surface of the insulating layer 2. The through hole 7 is formed by removing the insulating layer 2 at a predetermined position using, for example, a laser. In particular, when the opening diameter of the through hole 7 is small, it is desirable to control the angle of the inner wall surface of the through hole 7 and to form the inner wall surface of the through hole 7 with an ultraviolet laser or the like that is processed smoothly. .

次に、絶縁層2の上面の全面に、クロム,モリブデン,チタン等から成る拡散防止層(バリア層)とその上に被着された主に銅から成る銅層とで構成された下地導体層を無電解めっき法やスパッタリング法等によって形成する。そして、下地導体層が形成された基板1をフォトリソグラフィ法を用いて配線導体層3となる部分以外を覆うようにレジストパターンを形成した後、配線導体層3および貫通導体6の主導体層の部分を、電解めっき法にて形成する。その後、レジストパターンを除去し、レジストパターンにより覆われていた余分な下地導体層をケミカルエッチング法やドライエッチング法等にて除去することにより配線導体層3が形成される。   Next, an underlying conductor layer composed of a diffusion prevention layer (barrier layer) made of chromium, molybdenum, titanium or the like and a copper layer mainly made of copper deposited thereon on the entire upper surface of the insulating layer 2 Is formed by electroless plating or sputtering. Then, a resist pattern is formed on the substrate 1 on which the base conductor layer is formed so as to cover the portion other than the portion that becomes the wiring conductor layer 3 by using a photolithography method, and then the wiring conductor layer 3 and the main conductor layer of the through conductor 6 are formed. The part is formed by electrolytic plating. Thereafter, the resist pattern is removed, and the excess base conductor layer covered with the resist pattern is removed by a chemical etching method, a dry etching method, or the like, thereby forming the wiring conductor layer 3.

また、多層配線基板の最上層となる絶縁層2の表面に形成される配線導体層3の主導体層には、電気的な特性や接続信頼性の観点から、主導体層が銅層から成るものとすることがよく、また、その場合には接続信頼性および耐環境信頼性の観点から主導体層の上にニッケル層や金層を形成するとよい。   Further, the main conductor layer of the wiring conductor layer 3 formed on the surface of the insulating layer 2 which is the uppermost layer of the multilayer wiring board is made of a copper layer from the viewpoint of electrical characteristics and connection reliability. In this case, a nickel layer or a gold layer is preferably formed on the main conductor layer from the viewpoint of connection reliability and environmental resistance.

なお、最表層の絶縁層2に形成された貫通導体6の直上には、導体バンプやプローブを接続するための配線導体3を形成しなくともよく、その場合、最表層の絶縁層2に形成された貫通導体6の上面に直接導体バンプやプローブを接続すればよい。   It is not necessary to form the wiring conductor 3 for connecting a conductor bump or a probe directly above the through conductor 6 formed in the outermost insulating layer 2. In this case, the wiring conductor 3 is formed in the outermost insulating layer 2. A conductor bump or probe may be directly connected to the upper surface of the formed through conductor 6.

かくして、本発明の多層配線基板によれば、最上層の絶縁層2の表面に露出した貫通導体6の上面に、または、貫通導体6の上面に形成された配線導体層3に半導体集積回路の導体バンプを実装するとともに、多層配線基板を外部電気回路に電気的に接続することによって半導体装置となる。   Thus, according to the multilayer wiring board of the present invention, the semiconductor integrated circuit is formed on the top surface of the through conductor 6 exposed on the surface of the uppermost insulating layer 2 or on the wiring conductor layer 3 formed on the top surface of the through conductor 6. A semiconductor device is obtained by mounting conductor bumps and electrically connecting the multilayer wiring board to an external electric circuit.

あるいは、本発明の多層配線基板によれば、最上層の絶縁層2の表面に露出した貫通導体6の上面に、または、貫通導体6の上面に形成された配線導体層3にプローブを接続し、固定するともに多層配線基板を外部電気回路に電気的および機械的に接続することによって、半導体集積回路等の電気的な検査をするためのプローブカードとなる。   Alternatively, according to the multilayer wiring board of the present invention, the probe is connected to the upper surface of the through conductor 6 exposed on the surface of the uppermost insulating layer 2 or to the wiring conductor layer 3 formed on the upper surface of the through conductor 6. By fixing and fixing the multilayer wiring board electrically and mechanically to an external electric circuit, a probe card for conducting an electrical inspection of a semiconductor integrated circuit or the like is obtained.

本発明の多層配線基板の実施の形態の一例を示す縦断面図である。It is a longitudinal cross-sectional view which shows an example of embodiment of the multilayer wiring board of this invention. 図1の多層配線基板の絶縁性接着層部分の横断面図である。It is a cross-sectional view of the insulating adhesive layer portion of the multilayer wiring board of FIG. 本発明の多層配線基板の実施の形態の他の例における絶縁性接着層部分の横断面図である。It is a cross-sectional view of the insulating adhesive layer portion in another example of the embodiment of the multilayer wiring board of the present invention. (A)は本発明の多層配線基板の実施の形態の他の例を示す縦断面図、(B)は(A)の多層配線基板のX−X線での横断面図、(C)は(A)の多層配線基板のY−Y線での横断面図である。(A) is a longitudinal sectional view showing another example of the embodiment of the multilayer wiring board of the present invention, (B) is a transverse sectional view of the multilayer wiring board of (A) taken along line XX, (C) is It is a cross-sectional view in the YY line of the multilayer wiring board of (A). (A)は本発明の多層配線基板の実施の形態の他の例を示す縦断面図、(B)は(A)の多層配線基板のX−X線での横断面図、(C)は(A)の多層配線基板のY−Y線での横断面図である。(A) is a longitudinal sectional view showing another example of the embodiment of the multilayer wiring board of the present invention, (B) is a transverse sectional view of the multilayer wiring board of (A) taken along line XX, (C) is It is a cross-sectional view in the YY line of the multilayer wiring board of (A).

符号の説明Explanation of symbols

1・・・・基板
2・・・・絶縁層
3・・・・配線導体層
4・・・・絶縁フィルム
5・・・・絶縁性接着剤層
8・・・・非形成部
1 ... substrate 2 ... insulating layer 3 .... wiring conductor layer 4 ... insulation Enfu Irumu layer 5 ... insulating adhesive layer 8 ....-free portion

Claims (3)

絶縁フィルム層と絶縁性接着剤層とが積層されて成る絶縁層と、配線導体層とが交互に複数層積層されて成る多層配線基板において、前記絶縁層に前記絶縁性接着剤層の非形成部を複数層に設けており、前記絶縁層の積層方向に隣接する前記非形成部同士を平面透視して重ならないようにずらして配置したことを特徴とする多層配線基板。 In a multilayer wiring board in which an insulating layer formed by laminating an insulating film layer and an insulating adhesive layer and a plurality of wiring conductor layers are alternately laminated, the insulating adhesive layer is not formed on the insulating layer. A multilayer wiring board characterized in that a plurality of portions are provided in a plurality of layers, and the non-formed portions adjacent to each other in the stacking direction of the insulating layers are arranged so as not to overlap each other in a plan view . 前記絶縁性接着剤層の中央部から外周部に向かって前記非形成部の占有面積を漸次大きくしたことを特徴とする請求項1記載の多層配線基板。   2. The multilayer wiring board according to claim 1, wherein the area occupied by the non-formed part is gradually increased from the central part to the outer peripheral part of the insulating adhesive layer. 前記絶縁性接着剤層の中央部は前記非形成部の占有面積を小さくした、または前記非形成部を設けないことを特徴とする請求項1記載の多層配線基板。2. The multilayer wiring board according to claim 1, wherein the central portion of the insulating adhesive layer has a reduced area occupied by the non-formed portion or is not provided with the non-formed portion.
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