JP4614380B2 - Vacuum processing equipment - Google Patents

Description

The present invention relates to a deposited film on a substrate to be processed, especially a functional deposited film, for example, a semiconductor device, an electrophotographic photosensitive member, an image input line sensor, an imaging device, a photovoltaic element, and the like. relates to vacuum processing equipment for forming the light-receiving member using the deposition film of non-single-crystal etc., in particular those concerning the vacuum processing equipment for forming a deposited film by plasma CVD.

  Conventionally, as element members used for semiconductor devices, electrophotographic photoreceptor devices, image input line sensors, imaging devices, photovoltaic devices, various other electronic elements, optical elements, etc., hydrogen and halogen (for example, fluorine, chlorine, etc.) ), A deposited film for a semiconductor or the like composed of amorphous silicon compensated for at least one of them is proposed, and some of them are put into practical use.

  When this kind of deposited film is formed, it is necessary to make the deposited film thickness and film characteristics uniform, and the plasma is made uniform by a source gas supply method, a plasma CVD (Chemical Vapor Deposition) method, or the like. Rotating the means and the substrate to be processed on which the deposited film is formed is effective in achieving uniform film characteristics of the deposited film.

  Further, Patent Document 1 discloses an apparatus that defines a source gas supply means, an array of deposited film forming substrates, and an exhaust direction for the purpose of improving the utilization efficiency of the source gas and making the deposited film uniform. ing.

  Further, Patent Document 2 prescribes the source gas supply means, the material of the electrode component that blows out the source gas, and the conductance of the suction port near the periphery of the target object for the purpose of homogenizing the plasma processing. An apparatus is disclosed.

  Here, a schematic diagram of an example of a conventional deposited film forming apparatus 510 is shown in FIG. 5A is a longitudinal sectional view, and FIG. 5B is a transverse sectional view.

  The deposited film forming apparatus 510 includes a cylindrical reaction vessel 511 for forming a deposited film on the cylindrical substrate 512 by plasma treatment, a heater 513 for heating the cylindrical substrate 512, and the inside of the cylindrical reaction vessel 511. A substrate holder 517 for holding a cylindrical substrate 512 disposed in the chamber, and a source gas introduction pipe 514 for introducing a source gas into the cylindrical reaction vessel 511.

  Further, the deposited film forming apparatus 510 has a mixing gas 523 for adjusting a flow rate of the raw material gas, a mixing 523 with a mass flow controller (not shown) interposed therein, and a raw material gas inflow for adjusting the raw material gas supplied to the raw material gas introduction pipe 514. A valve 530, a high frequency power source 516 for supplying high frequency power to the cylindrical reaction vessel 511, and a matching box 515 having a matching circuit are provided.

  A high frequency power source 516 is electrically connected to the cylindrical reaction vessel 511 via a high frequency matching box 515.

  Further, a rotation support mechanism 505 that rotatably supports a substrate holder 517 that holds the cylindrical substrate 512 is provided at the lower portion of the cylindrical reaction vessel 511. The rotation support mechanism 505 includes a turntable 521 on which a base holder 517 is placed, a support shaft 522 that rotatably supports the turntable 521, and a motor 520 for rotating the turntable 521. Yes.

  The cylindrical base body 512 is mounted on the base body holder 517, and is rotatable with the base body holder 517 by rotating the turntable 521 about the axis of the support shaft 522.

  The exhaust system provided in the deposited film forming apparatus 510 includes an exhaust pipe 528 communicated with the exhaust port 526 of the cylindrical reaction vessel 511, a vacuum gauge 525 provided in the path of the exhaust pipe 528, an exhaust main valve 527, For example, a vacuum pump 529 such as a rotary pump or a mechanical booster pump is provided, and the inside of the cylindrical reaction vessel 511 is maintained at a predetermined pressure.

  By forming the deposited film using the conventional vacuum processing apparatus configured as described above, it is possible to obtain a deposited film in which practical film characteristics and uniformity are ensured to some extent.

Conventionally, the deposited film has been made uniform by the above-described method and apparatus. However, in recent years, with the digitization and colorization, the uniformity of the deposited film is required more than ever. Further, a deposited film having further improved electrophotographic characteristics is required, and the layer configuration of the deposited film is diversified. As a result, the vacuum processing conditions are also complicated.
Japanese Patent Publication No. 5-32472 JP-A-8-153679

  However, in the above-described conventional vacuum processing apparatus, when producing a product requiring a relatively large area and a thick deposited film such as an electrophotographic photoreceptor, a large amount of powdery by-products are formed during the formation of the deposited film. Occurs.

  These powdery by-products are also formed around the exhaust port and inside the exhaust pipe, and as a result, the exhaust conductance changes. This change in conductance affects the processing conditions (especially internal pressure) during the formation of the deposited film, and at the same time, depending on the shape of the exhaust port, may change the gas flow and affect the uniformity of the deposited film. is there.

  Further, as described above, the layer configuration of the deposited film has been diversified in order to improve the electrophotographic characteristics, so that the vacuum processing conditions are also complicated. Therefore, in the conventional vacuum processing apparatus, it may be difficult to flow the source gas uniformly and stably for all processing conditions.

  Furthermore, since the vacuum processing conditions are different in multi-product production, it is necessary to optimize the vacuum processing apparatus according to each product, which may lead to a decrease in productivity.

  In the conventional electrophotographic apparatus, as described above, there was no practical problem even when an electrophotographic photosensitive member made of a deposited film formed in a state where a change in the gas flow occurred during the formation of the deposited film. .

  However, for example, in recent high-quality color apparatuses, since gradation is improved, when the electrophotographic photoreceptor as described above is used, unevenness in electrophotographic characteristics of the electrophotographic photoreceptor is visually observed. May become noticeable.

Accordingly, an object of the present invention to provide a vacuum processing equipment which can improve the uniformity of the film thickness and film properties of the deposited film.

To achieve the above object, the vacuum processing apparatus according to the present invention, a reaction vessel having a cylindrical shape or a cylindrical shape having a pressure can be reduced reaction space part, an exhaust means for decompressing said reaction vessel,
A substrate holding means for holding the cylindrical body in the longitudinal direction so as to face the axial direction of the cylindrical substrate in the reaction vessel,
Rotating means for rotating said substrate holding means,
A raw material gas introduction means for introducing a raw material gas for forming the deposited film into the reaction vessel,
A heating means for heating the cylindrical substrate,
In a vacuum processing apparatus comprising application means for applying discharge energy for exciting and seeding the source gas,
The exhaust means includes
A sidewall of the reaction vessel, and a plurality of exhaust ports arranged toward the longitudinal direction,
An exhaust pipe connected to each of the plurality of exhaust ports;
An exhaust conductance adjustment means the provided in each exhaust pipe,
I have a,
In the vacuum processing apparatus, a buffer space for preventing gas flow disturbance is formed in a region where the plurality of exhaust ports are arranged,
The buffer space is characterized that you have been formed by the buffer wall has a gradually narrowed and gradually shape toward said plurality of exhaust ports from the reaction vessel.

  As described above, the vacuum processing apparatus of the present invention can improve the uniformity of the gas flow in the longitudinal direction by providing a plurality of exhaust ports in the longitudinal direction of the reaction vessel.

  Furthermore, in the vacuum processing apparatus of the present invention, since conductance adjusting means is provided in each exhaust pipe exhaust, during the vacuum processing as described above, a powdery by-product is formed around the exhaust port or inside the exhaust pipe. As a result, even when the exhaust conductance changes, the exhaust conductance adjusting means is driven, so that the exhaust conductance related to each exhaust port during the vacuum processing can be balanced during the vacuum processing. . As a result, the gas flow during the vacuum processing can be stabilized, and the uniformity of the deposited film is greatly improved.

  In addition, even if the vacuum processing conditions are diversified as in the case of multi-layered vacuum processing or multi-product production, the exhaust conductance relating to each exhaust port during vacuum processing is driven by driving the exhaust conductance adjusting means as described above. It is possible to achieve a certain balance. As a result, the gas flow during the vacuum processing can be stabilized, and the uniformity of the deposited film is greatly improved.

  In addition, even in the case of multi-product production, even if each vacuum processing condition is different, it is possible to optimize the vacuum processing apparatus by simply adjusting the exhaust conductance according to each product, and the productivity can be improved.

  According to the present invention, it is possible to achieve uniformity and stabilization in the longitudinal direction with respect to the gas flow in the reaction vessel in vacuum processing. Thereby, the film thickness of the deposited film, and hence the uniformity of the film characteristics can be improved.

  Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 schematically shows an example of a deposition film forming apparatus 110 for manufacturing an electrophotographic photoreceptor by an RF (Radio Frequency) -CVD (Chemical Vapor Deposition) method using a high frequency of 13.56 [MHz] band. FIG. 1A is a longitudinal sectional view, and FIG. 1B is a transverse sectional view.

  The deposited film forming apparatus 110 includes a cylindrical reaction vessel 111 for forming a deposited film on the cylindrical substrate 112 by plasma processing, a heater 113 for heating the cylindrical substrate 112, and a cylindrical reaction vessel 111. A substrate holder 117 for holding the cylindrical substrate 112 disposed in the chamber, and a source gas introduction pipe 114 for introducing a source gas into the cylindrical reaction vessel 111.

  Further, the deposited film forming apparatus 110 has a mixing gas 123 for interposing a mass flow controller (not shown) for adjusting the flow rate of the source gas, and a source gas inflow for adjusting the source gas supplied to the source gas introduction pipe 114. A valve 130, a cylindrical reaction vessel 111 to which high-frequency discharge power is supplied, a high-frequency power source 116 for supplying high-frequency power to the cylindrical reaction vessel 111, and a matching box 115 having a matching circuit are provided.

  The cylindrical substrate 112 only needs to have a material according to the purpose of use. As the material of the cylindrical substrate 112, for example, copper, aluminum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel and the like are preferable because of their good electrical conductivity. Aluminum is the best considering the manufacturing cost. As the aluminum forming the cylindrical substrate 112, it is preferable to use, for example, either an Al—Mg alloy or an A—Mn alloy.

  The heater 113 is provided inside the base holder 117. The heating heater 113 may be a heating element that can be used in a vacuum. Specifically, an electric resistance heating element such as a sheath heater, a plate heater, a ceramic heater, or a carbon heater, a halogen lamp, or an infrared lamp. Examples of the heat radiation lamp heating element such as a heat radiation lamp and the like, and a heating element by heat exchange means using a liquid, gas, or the like as a heat medium, are examples. As the surface material of the heater 113, metals such as stainless steel, nickel, aluminum, and copper, ceramics, heat resistant polymer resins, and the like can be used.

  A high frequency power supply 116 is electrically connected to the cylindrical reaction vessel 111 via a high frequency matching box 115. The cylindrical reaction vessel 111 is insulated from the lower plate 118 and the upper lid 119 of the cylindrical reaction vessel 111 serving as the ground surface by an insulator 131 made of ceramics.

  Further, at the lower part of the cylindrical reaction vessel 111, a rotation support for rotatably supporting a substrate holder 117 that holds the cylindrical substrate 112 so that the axial direction of the cylindrical substrate 112 faces the longitudinal direction of the cylindrical reaction vessel 111 is supported. A mechanism 105 is provided. The rotation support mechanism 105 includes a turntable 121 on which the base holder 117 is placed, a support shaft 122 that supports the turntable 121, and a motor 120 that rotates the turntable 121.

  The cylindrical base body 112 is mounted on the base body holder 117 and rotated around the support shaft 122 together with the turntable 121.

  The exhaust system included in the deposited film forming apparatus 110 includes an exhaust pipe 128 communicating with the exhaust port 126 of the cylindrical reaction vessel 111, vacuum gauges 125A to 125C provided in the paths of the exhaust pipes 128, and exhaust conductance adjusting means. Conductance valves 124A to 124C, an exhaust main valve 127, and a vacuum pump unit 129 such as, for example, a rotary pump or a mechanical booster pump, and the inside of the cylindrical reaction vessel 111 is maintained at a predetermined pressure.

  The exhaust ports 126 are arranged on the side wall of the cylindrical reaction vessel 111 on three straight lines in the longitudinal direction.

  The exhaust pipe 128 is connected to the side surface of the cylindrical reaction vessel 111 via an insulator 131.

  An example of a procedure of a method for forming a deposited film using the deposited film forming apparatus 110 configured as described above will be described below.

  A substrate holder 117 mounted with a cylindrical substrate 112 is installed in the cylindrical reaction vessel 111, and the inside of the cylindrical reaction vessel 111 is evacuated by a vacuum pump unit 129. Subsequently, a raw material gas necessary for heating the cylindrical substrate 112, such as Ar or He, is introduced into the cylindrical reaction vessel 111 through the mixing 123 and the raw material gas introduction pipe 114, and the vacuum pump unit 129 and the exhaust main Using the valve 127, adjustment is performed while checking the vacuum gauges 125A to 125C so that the inside of the cylindrical reaction vessel 111 becomes a predetermined pressure.

  Next, after the predetermined pressure is reached, the temperature of the cylindrical substrate 112 is about 200 [° C.] to 450 [° C.], more preferably about 250 [° C.] to 350 [° C.] by the heater 113 for heating. Control to temperature.

  After the preparation for forming the deposited film is completed by the above procedure, a photoconductive layer is formed on the cylindrical substrate 112.

  That is, the raw material gas for heating and the raw material gas for forming the deposited film are mixed and introduced through the mixing 123 so that the raw material gas is adjusted to have a desired flow rate. At that time, the rotation of the mechanical booster pump of the vacuum pump unit 129 is confirmed while checking the vacuum gauges 125A to 125C so that the inside of the cylindrical reaction vessel 111 has a desired pressure of about 13.3 [mPa] to 1330 [Pa]. Adjust the frequency.

  At the same time, the opening degrees of the conductance valves 124A to 124C are adjusted so that the values of the vacuum gauges 125A to 125C become predetermined values (ratio).

  After the pressure in the cylindrical reaction vessel 111 is stabilized, the high frequency power supply 116 is set to a desired power, and the high frequency power is supplied via the high frequency matching box 115 using, for example, an RF power supply having a frequency of 13.56 [MHz]. By supplying it to the cylindrical reaction vessel 111, high-frequency glow discharge is caused.

  With this discharge energy, the raw material gas introduced into the cylindrical reaction vessel 111 is decomposed, and a desired deposited film mainly containing silicon atoms is formed on the cylindrical substrate 112.

  In order to form a uniform deposited film, the cylindrical substrate 112 is rotated at the same time as the deposited film is formed or at the stage where the cylindrical substrate 112 is heated. The motor 120 is rotated and rotated at a rotation speed of about 1 [rpm] to 10 [rpm], for example, 1 [rpm]. By doing so, a uniform deposited film is formed in the circumferential direction of the cylindrical substrate 112.

  Further, during the formation of the deposited film, the opening degrees of the conductance valves 124A to 124C are adjusted as needed so that the values of the vacuum gauges 125A to 125C become predetermined values. By doing so, the gas flow in the longitudinal direction of the cylindrical substrate 112 is stabilized during the vacuum processing, so that a uniform deposited film is formed in the longitudinal direction.

  For example, when the vacuum processing conditions change as in the case of producing an electrophotographic photosensitive member having a multi-layer structure, the conductance valve 124A is set so that the values of the vacuum gauges 125A to 125C become optimum values for each layer. The opening degree of ˜124C is adjusted at any time. In this way, a deposited film is formed on the outer peripheral surface of the cylindrical substrate 112.

Next, after the deposited film is formed, the supply of the source gas and the high-frequency power is stopped, the degree of opening of the conductance valves 124A to 124C is fully opened, and the inside of the cylindrical reaction vessel 111 is exhausted. Thereafter, the inside of the cylindrical reaction vessel 111 and the raw material gas introduction pipe 114 is purged using at least one of a purge gas, for example, an inert gas such as Ar and N ₂ . After the purge process is completed, the inside of the cylindrical reaction vessel 111 is returned to atmospheric pressure using at least one of an inert gas such as Ar and N ₂ gas, and the cylindrical substrate 112 is taken out from the cylindrical reaction vessel 111.

Thereafter, a cleaning process of by-products such as polysilane generated and deposited in large quantities during the formation of the deposited film is performed. As a procedure at that time, instead of the cylindrical substrate 112, a cleaning dummy substrate (not shown) having the same shape is installed in the cylindrical reaction vessel 111, and the inside of the cylindrical reaction vessel 111 is evacuated by the vacuum pump unit 129. Exhaust. Subsequently, a raw material gas necessary for the cleaning process, such as a mixed gas of Ar and ClF ₃ , is introduced into the cylindrical reaction vessel 111 through the mixing 124 and the raw material gas introduction pipe 114, and the vacuum pump unit 129 and the exhaust main valve 127 are introduced. Using the conductance valves 124A to 124C, the inside of the cylindrical reaction vessel 111 is adjusted while confirming the vacuum gauges 125A to 125C so as to be a predetermined pressure.

  After the pressure in the cylindrical reaction vessel 111 is stabilized, the high frequency power supply 116 is set to a desired power, and the high frequency power is supplied via the high frequency matching box 115 using, for example, an RF power supply having a frequency of 13.56 [MHz]. By supplying it to the cylindrical reaction vessel 111, high-frequency glow discharge is caused. With this discharge energy, the cleaning source gas introduced into the cylindrical reaction vessel 111 is decomposed, and the inside of the cylindrical reaction vessel 111 is cleaned.

Next, the supply of high-frequency power is stopped after the cleaning process, the degree of opening of the conductance valves 124A to 124C is fully opened, and the inside of the cylindrical reaction vessel 111 is exhausted. Thereafter, the inside of the cylindrical reaction vessel 111 and the raw material gas introduction pipe introduction pipe 114 is purged using a purge gas, for example, at least one of an inert gas such as Ar and N ₂ . After the purge process is completed, the inside of the cylindrical reaction vessel 111 is returned to atmospheric pressure by using at least one of an inert gas such as Ar and N ₂ gas, and a dummy substrate for cleaning (not shown) is removed from the inside of the cylindrical reaction vessel 111. Take out.

  In the present embodiment, the exhaust ports 126 are basically arranged in the longitudinal direction of the cylindrical base body 112 in terms of the uniformity of the gas flow in the longitudinal direction. From the standpoint of improving uniformity. Further, the arrangement in the circumferential direction is preferably arranged in one direction in the circumferential direction in terms of gas utilization efficiency and simplification of the apparatus.

  In the present embodiment, the distance from the end of the exhaust port 126 on one end side to the end of the exhaust port 126 on the other end side indicated by “L1” in FIG. 1 is longer than the length of the cylindrical base body 112. This is preferable from the viewpoint of the uniformity of the gas flow in the longitudinal direction.

(Second Embodiment)
Next, another specific embodiment of the present invention will be described with reference to the drawings. In the description, the same members as those in the first embodiment will be described using the same reference numerals as those in the first embodiment.

  FIG. 2 shows a deposited film forming apparatus for manufacturing an electrophotographic photoreceptor by RF (Radio Frequency) -CVD (Chemical Vapor Deposition) method using a high frequency of 13.56 [MHz] band as in FIG. It is the longitudinal cross-sectional view which showed an example of 110 typically.

  The difference between the present embodiment and the first embodiment is that a buffer space 200 is provided between the exhaust port 126 and the cylindrical reaction vessel 111 to prevent gas flow disturbance.

  As shown in FIG. 2, a buffer space 200 is formed by a buffer wall 201 in a region where the exhaust ports 126 are arranged. As the buffer wall 201 gradually narrows from the cylindrical reaction vessel 111 toward each exhaust port 126, the cross-sectional area of the flow path changes abruptly between the cylindrical reaction vessel 111 and each exhaust port 126. It has a shape that is smoothly connected so that there is no. In the apparatus of the present embodiment, by providing the buffer space 200 between the cylindrical reaction vessel 111 and each exhaust port 126, it is possible to improve the uniformity of the gas flow in the longitudinal direction while keeping the apparatus small. Become. The reason is presumed as follows.

  Since the source gas is finally concentrated at each exhaust port 126, the gas flow is different between the front surface of the exhaust port 126 and the periphery of the exhaust port 126.

  The effect may appear on the surface of the cylindrical substrate 112 that is processed on the exhaust port 126 side. Such disturbance of the gas flow in the vicinity of the exhaust port 126 is less likely to be affected if the exhaust port 126 is moved away from the cylindrical base body 112, but the apparatus becomes large. If the buffer space 200 is provided so as to include all the exhaust ports 126 as in the present embodiment, it is possible to reduce the turbulence of the gas flow generated in the vicinity of the exhaust ports 126 as described above. Therefore, compared with the case where the buffer space 200 is not provided, the influence of the gas flow disturbance can be reduced without greatly increasing the distance between the exhaust port 126 and the cylindrical base body 112. It is possible to improve flow uniformity.

  2, the distance from one end side to the other end side of the opening of the buffer space 200, which is indicated by “L2”, is longer than the length of the cylindrical substrate 112 in terms of uniformity of gas flow in the longitudinal direction. To preferred.

  Further, as shown in FIG. 2, the wall surface forming the buffer space 200 and the exhaust port 126 are preferably connected smoothly so that the disturbance of the gas flow can be reduced.

  In the present invention, the application means for applying the discharge energy for exciting the source gas to be excited and seeded is provided with a plurality of exhaust ports 126 on the cylindrical base 112 and a discharge energy feeding point on the opposite side. This is preferable because discharge energy can be efficiently applied to the raw material gas. As a result, the uniformity of plasma in the discharge space is improved.

The source gas used when forming the deposited film includes amorphous silicon such as silane (SiH ₄ ), disilane (Si ₂ H ₆ ), silicon tetrafluoride (SiF ₄ ), and disilicon hexafluoride (Si ₂ F ₆ ). It is also effective to use a raw material gas for formation or a mixed gas thereof. It is also effective to use hydrogen (H ₂ ), argon (Ar), helium (He) or the like as the dilution gas. Further, as a characteristic improving gas for changing the band gap width of the deposited film, elements containing nitrogen atoms such as nitrogen (N ₂ ) and ammonia (NH ₃ ), oxygen (O ₂ ), nitrogen monoxide (NO), Elements containing oxygen atoms such as nitrogen dioxide (NO ₂ ), dinitrogen oxide (N ₂ O), carbon monoxide (CO), carbon dioxide (CO ₂ ), methane (CH ₄ ), ethane (C ₂ H ₆ ) , Hydrocarbons such as ethylene (C ₂ H ₄ ), acetylene (C ₂ H ₂ ), propane (C ₃ H ₈ ), fluorine compounds such as germanium tetrafluoride (GeF ₄ ), nitrogen fluoride (NF ₃ ) or It is also effective to use these mixed gases in combination.

For the purpose of doping treatment, it is also effective to introduce a dopant gas such as diborane (B ₂ H ₆ ), boron fluoride (BF ₃ ), or phosphine (PH ₃ ) into the discharge space at the same time.

Examples of the cleaning gas used in the cleaning process include CF ₄ , CF ₄ / O ₂ , SF ₆ , and ClF ₃ (chlorine trifluoride). In the present invention, the cleaning gas is effective from the viewpoint of shortening the cleaning time. ClF ₃ (chlorine trifluoride) is used. In the present invention, in order to adjust the concentration of the cleaning gas, it is effective to adjust the concentration using an inert gas for dilution. As the introduced inert gas, for example, He, Ne and Ar are exemplified, but Ar is preferably used.

  In the deposited film forming apparatus according to the present invention configured as described above, a plurality of exhaust ports 126 are provided in the longitudinal direction on the side wall of the cylindrical reaction vessel 111, and an exhaust pipe 128 is provided at each exhaust port 126. Each exhaust pipe 128 is provided with conductance valves 124A to 124C serving as exhaust conductance adjusting means. That is, according to the vacuum processing apparatus according to the present invention, during vacuum processing, a powdery by-product is formed around the exhaust port and inside the exhaust pipe, and as a result, even when the exhaust conductance changes, By driving the exhaust conductance adjusting means, the exhaust conductance relating to each exhaust port during the vacuum processing can be kept at a certain balance during the vacuum processing. As a result, the gas flow during the vacuum processing can be stabilized, and the uniformity of the deposited film is greatly improved.

  In addition, for example, even if the vacuum processing conditions are diversified, such as in a vacuum processing of a multi-layer configuration, by driving the exhaust conductance adjusting means, a certain balance of the exhaust conductance regarding each exhaust port during the vacuum processing can be achieved. It becomes possible. As a result, the gas flow during the vacuum processing can be stabilized, and the uniformity of the deposited film is greatly improved.

  In addition, in the multi-product production, even when each vacuum processing condition is different, it is possible to easily optimize the vacuum processing apparatus according to each product, and the productivity can be improved.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited at all by these. In the following description, the same reference numerals as those in the above-described embodiments are used.

Example 1
Using the deposited film forming apparatus in which the buffer space 200 shown in FIG. 2 is formed, it is shown in FIG. 4 on the cylindrical substrate 112 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a wall thickness of 3 mm under the conditions shown in Table 1. A layered amorphous silicon deposited film was formed (hereinafter abbreviated as an electrophotographic photosensitive member). In FIG. 4, reference numeral 401 denotes a cylindrical substrate, reference numeral 402 denotes a lower blocking layer (first layer), reference numeral 403 denotes a first photoconductive layer (second layer), and reference numeral 404 denotes a surface layer (third layer). Layer).

  In this example, when the formation of each layer was started, the aperture ratio of the conductance valve was adjusted as shown in Table 2, and the aperture ratio was maintained during the formation of each layer. did. Further, the distance from one end side to the other end side of the opening of the buffer space indicated by “L2” in the drawing is configured to be 10% longer than the length of the cylindrical base body 112 in the vertical direction with respect to the cylindrical base body 112. .

Evaluation of “Vd bus line unevenness”, “Vh bus line unevenness”, and “image defect” was performed on the electrophotographic photosensitive member produced. The evaluation was carried out as follows using a copying machine modified from Canon iR-5000 so that the surface potential in the longitudinal direction of the electrophotographic photosensitive member could be measured.
・ "Vd bus unevenness"
Surface potential meter with a process speed of 265 mm / sec, pre-exposure (LED with a wavelength of 655 nm) light amount of 4 lx · s, and the surface potential at the center in the length direction of the electrophotographic photosensitive member set at the charger position (TREK Model 344) The electric current value of the charger is adjusted to 450 V (dark potential) by the potential sensor. Thereafter, the measurement probe was measured at nine points in the axial direction from the end of the electrophotographic photosensitive member, and the maximum value-minimum value of the nine points was evaluated as Vd bus line unevenness.
・ "Vh bus line unevenness"
The current value of the charger is adjusted so that the surface potential at the center position of the electrophotographic photosensitive member becomes 450 V (dark potential) in the same procedure as the Vd bus line unevenness, and then image exposure (laser with a wavelength of 660 nm) is irradiated. After adjusting the amount of light of the exposure light source so that the surface potential becomes 200 V (bright potential), the measurement probe is measured 9 points in the axial direction from the end of the electrophotographic photosensitive member, and the maximum value of the 9 points − The minimum value was evaluated as Vh bus line unevenness.
・ "Image defects"
An image having a transmission density of 2.0 was prepared by adjusting the charging voltage, developing bias, etc., and the number of image defects having a diameter of 0.2 mm or more within the same area of the image was evaluated.
-"Vd bus line unevenness", "Vh bus line unevenness", and "image defect" were evaluated relative to the result of Comparative Example 1 below as 100. The results are shown in Table 3.

(Example 2)
Using the deposited film forming apparatus in which the buffer space 200 shown in FIG. 2 is formed, it is shown in FIG. 4 on the cylindrical substrate 112 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a wall thickness of 3 mm under the conditions shown in Table 1. A layered amorphous silicon deposited film was formed.

  In this example, the aperture ratios of the conductance valves 124A, 124B, and 124C were adjusted during the formation of each layer so that the values of the internal pressure gauges 125A, 125B, and 125C were always at a constant ratio (1: 1: 1) when each layer was created. Except for the above, an electrophotographic photosensitive member was produced in the same manner as in Example 1, and the same evaluation as in Example 1 was performed. The obtained results are shown in Table 3.

(Example 3)
Using the deposited film forming apparatus in which the buffer space 200 shown in FIG. 2 is formed, it is shown in FIG. 4 on the cylindrical substrate 112 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a wall thickness of 3 mm under the conditions shown in Table 1. A layered amorphous silicon deposited film was formed.

  In this example, an electrophotographic photosensitive member was produced in the same manner as in Example 1 except that “L2” in the figure was the same length as the cylindrical substrate 112, and the same evaluation as in Example 1 was performed. The obtained results are shown in Table 3.

( Reference Example 4)
Using the deposited film forming apparatus shown in FIG. 1, an amorphous silicon deposited film having the layer structure shown in FIG. 4 on the cylindrical substrate 112 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a thickness of 3 mm under the conditions shown in Table 1. Was formed.

In this reference example, an electrophotographic photosensitive member was produced in the same manner as in Example 1 except that “L1” in the figure was the same length as the cylindrical substrate 112, and the same evaluation as in Example 1 was performed. The obtained results are shown in Table 3.

(Comparative Example 1)
4 using the deposited film forming apparatus having no conductance valve shown in FIG. 5 on a cylindrical substrate 512 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a thickness of 3 mm under the conditions shown in Table 1. An amorphous silicon deposited film having the layer structure shown in FIG. Evaluation similar to Example 1 was performed with respect to the produced electrophotographic photoreceptor. The obtained results are shown in Table 3.

  As is apparent from Table 3, it can be seen that the uniformity of the vacuum processing is greatly improved by the present invention.

  Furthermore, it became clear that the conductance valves 124A, 124B, and 124C, which are exhaust conductance adjusting means, are driven during the vacuum processing to adjust the gas flow, which is more preferable in terms of uniformity.

  Furthermore, it has been clarified that the uniformity of the gas flow in the longitudinal direction can be improved by providing the buffer space 200 between the exhaust port 126 and the cylindrical reaction vessel 111.

  Furthermore, it has become clear that it is more preferable in terms of uniformity to make the distance from one end side to the other end side of the opening of the buffer space 200 longer than the length of the cylindrical substrate 112.

  Furthermore, as shown by the reduction in image defects, it has been found that the vacuum processing characteristics are improved according to the present invention. About this reason, it estimates as follows. As described above, the present invention improves the uniformity of the deposited film on the substrate. On the other hand, it is presumed that the uniformity of the deposited film other than the substrate such as the reaction vessel 111 is also improved. As a result, since the distortion such as internal stress in the deposited film which has conventionally occurred is reduced, the adhesion of the deposited film is improved, and it is presumed that the film peeling or the like during the vacuum processing is reduced.

(Example 5)
Using the deposited film forming apparatus shown in FIG. 3, an amorphous silicon deposited film having the layer structure shown in FIG. 4 on the cylindrical substrate 112 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a wall thickness of 3 mm under the conditions shown in Table 1. Was formed.

  The deposited film forming apparatus of FIG. 3 is different from the deposited film forming apparatus of FIG. 2 in the position of the feeding point. That is, in the deposited film forming apparatus of FIG. 2, the feeding point of the high-frequency power supply 116 is provided at a position facing the plurality of exhaust ports 126 with the cylindrical base 112 interposed therebetween. On the other hand, in the deposited film forming apparatus of FIG. 3, the feeding point is provided at a position other than the position facing the plurality of exhaust ports 126 with the cylindrical substrate 112 interposed therebetween.

In the present embodiment, the evaluation of “Vd circumferential unevenness” and “image defect” with respect to the electrophotographic photosensitive member produced by the deposited film forming apparatus having the configuration shown in FIG. Went like that.
・ Evaluation of “Vd circumferential unevenness” Center position in the length direction of the electrophotographic photosensitive member under the conditions of a process speed of 265 mm / sec, a pre-exposure (LED with a wavelength of 655 nm) light amount of 4 lx · s, and a current value of the charger of 1000 μA. Measure the surface potential. This measurement was performed for 10 rotations of the electrophotographic photosensitive member, and the obtained difference between the maximum value and the minimum value of the surface potential is shown in Table 4 as unevenness in the Vd circumferential direction.
"Image defects"
As in Example 1, the charging voltage, the developing bias, etc. are adjusted to create an image with a transmission density of 2.0. evaluated. Table 4 shows the obtained results. In Table 4, relative evaluation was performed with the results of “Vd circumferential unevenness” and “image defects” of the electrophotographic photosensitive member produced in Example 1 being 100.

As is apparent from Table 4, the application means for applying the discharge energy that excites the source gas to be excited and seeded is provided with a plurality of exhaust ports and a discharge energy feeding point on the opposite side of the cylindrical substrate. It is preferable in terms of uniformity.
The reason for this is not clear, but is presumed as follows.

  It is considered that the active species generated by exciting the source gas with the discharge energy is shorter in the discharge space as it is closer to the exhaust port. Therefore, it is considered that by supplying discharge energy from a position far from the exhaust means, active species are efficiently generated in the discharge space, and as a result, the plasma is stabilized and the uniformity in the discharge space is improved.

It is sectional drawing which shows typically an example of the deposited film forming apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows typically an example of the deposited film formation apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows typically the deposited film formation apparatus used in Example 2. FIG. It is a schematic diagram showing an example of a layer structure of an amorphous silicon electrophotographic photoreceptor. It is sectional drawing which shows typically an example of the conventional deposited film formation apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 105 Rotation support mechanism 110 Deposited film formation apparatus 111 Cylindrical reaction vessel 112 Cylindrical base body 114, 514 Source gas introduction pipe 124A-124C Conductance valve 126 Exhaust port 127 Exhaust main valve 128 Exhaust pipe 130 Source gas inflow valve 200 Buffer space

Claims (5)

A reaction vessel having a reaction space that can be depressurized, or a reaction vessel partially having a cylindrical shape, an exhaust means for depressurizing the inside of the reaction vessel, and an axial direction of the cylindrical substrate in the longitudinal direction in the reaction vessel Substrate holding means for holding the cylindrical substrate, rotating means for rotating the substrate holding means, source gas introducing means for introducing a source gas for forming a deposited film into the reaction vessel, and the cylindrical substrate In a vacuum processing apparatus comprising: a heating means for heating the gas; and an application means for applying discharge energy for exciting and seeding the source gas.
The exhaust means includes
A plurality of exhaust ports arranged in the longitudinal direction on the side wall of the reaction vessel;
An exhaust pipe connected to each of the plurality of exhaust ports;
Exhaust conductance adjusting means provided in each exhaust pipe;
I have a,
In the vacuum processing apparatus, a buffer space for preventing gas flow disturbance is formed in a region where the plurality of exhaust ports are arranged,
The buffer space is a vacuum processing apparatus which is characterized that you have been formed by the buffer wall has a gradually narrowed and gradually shape toward from said reaction vessel to said plurality of exhaust ports.   The distance from the exhaust port end on one end side to the exhaust port end on the other end side of the plurality of exhaust ports arranged in the longitudinal direction is longer than the axial length of the cylindrical base body. The vacuum processing apparatus according to claim 1. The vacuum processing apparatus according to claim 1, wherein a distance of the buffer space in the longitudinal direction is longer than the axial length of the cylindrical substrate. The feeding point of the application means is provided at a position on the side wall of the reaction vessel facing the plurality of exhaust ports with the cylindrical substrate interposed therebetween. Vacuum processing equipment. The vacuum processing apparatus according to claim 1, wherein the source gas introduction unit supplies a source gas containing silicon atoms.

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