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JP4646997B2 - Driving method of photoelectric conversion device - Google Patents
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JP4646997B2 - Driving method of photoelectric conversion device - Google Patents

Driving method of photoelectric conversion device Download PDF

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JP4646997B2
JP4646997B2 JP2008187331A JP2008187331A JP4646997B2 JP 4646997 B2 JP4646997 B2 JP 4646997B2 JP 2008187331 A JP2008187331 A JP 2008187331A JP 2008187331 A JP2008187331 A JP 2008187331A JP 4646997 B2 JP4646997 B2 JP 4646997B2
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photoelectric conversion
electrode layer
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driving
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功 小林
朋之 八木
紀之 海部
敏和 田村
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Canon Inc
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Description

本発明は光電変換装置の駆動方法に係わり、特に大面積プロセスを用いて形成する光電変換装置、例えばファクシミリ、デジタル複写機あるいはX線撮像装置等の等倍読み取りを行う二次元の光電変換装置に好適に用いられる光電変換装置及の駆動方法に関するものである。   The present invention relates to a method for driving a photoelectric conversion device, and more particularly to a photoelectric conversion device formed by using a large area process, for example, a two-dimensional photoelectric conversion device that performs the same magnification reading such as a facsimile, a digital copying machine, or an X-ray imaging device. The present invention relates to a suitably used photoelectric conversion device and driving method.

従来、ファクシミリ、デジタル複写機あるいはX線撮像装置等の読み取り系としては縮小光学系とCCD型センサを用いた読み取り系が用いられていたが、近年、水素化アモルファスシリコン(以下、a−Siと記す)に代表される光電変換半導体材料の開発により、光電変換素子及び信号処理部を大面積の基板に形成し、情報源と等倍の光学系で読み取る、いわゆる密着型センサの開発がめざましい。特にa−Siは光電変換材料としてだけでなく、薄膜電界効果型トランジスタ(以下、TFTと記す)としても用いることができるので光電変換半導体層とTFTの半導体層とを同時に形成することができる利点を有している。   Conventionally, a reading system using a reduction optical system and a CCD type sensor has been used as a reading system for a facsimile, a digital copying machine, an X-ray imaging apparatus, etc. In recent years, hydrogenated amorphous silicon (hereinafter referred to as a-Si) is used. The development of a photoelectric conversion semiconductor material represented by the following describes a so-called contact-type sensor in which a photoelectric conversion element and a signal processing unit are formed on a large-area substrate and read by an optical system of the same magnification as an information source. In particular, a-Si can be used not only as a photoelectric conversion material but also as a thin film field effect transistor (hereinafter referred to as TFT), so that the photoelectric conversion semiconductor layer and the TFT semiconductor layer can be formed simultaneously. have.

しかしながら、大面積の光電変換装置に対する特性的なスペックは年々厳しくなっており、特にX線撮像装置等の等倍読み取りを行う二次元の光電変換装置においては、人体に影響のあるX線を少しでも減らして、より精度の高いデータを二次元エリア内で一様に且つ短時間で得ることが要求されており、このような要求を受けて、光電変換素子の信号出力のバラツキを少しでも小さくし、且つ短時間で駆動するために、センサのリフレッシュ方法において駆動線の動作に工夫をすることが考えられる。   However, characteristic specifications for large-area photoelectric conversion devices are becoming stricter year by year. Particularly in a two-dimensional photoelectric conversion device that performs the same magnification reading such as an X-ray imaging device, X-rays that affect the human body are slightly affected. However, it is required to obtain highly accurate data uniformly in a two-dimensional area in a short time, and in response to such a request, the variation in the signal output of the photoelectric conversion element is reduced as much as possible. In order to drive in a short time, it is conceivable to devise the operation of the drive line in the sensor refresh method.

本発明の光電変換装置の駆動方法は、2つの電極層を有する光電変換素子と、前記光電変換素子の一方の電極層に接続されたスイッチ素子と、をそれぞれ備えた画素が行方向と列方向に複数配列されており、
前記行方向に配列された複数の前記スイッチ素子に接続された駆動線と、前記列方向に配列された複数の前記スイッチ素子に接続された信号線と、をそれぞれ複数有し、
前記スイッチ素子をオンしているパルス幅と前記スイッチ素子をオンからオフにする立ち下がりとを有するパルスを各駆動線に対して印加する制御手段と、前記複数の画素の前記光電変換素子の他方の電極層に共通に接続された配線を、前記光電変換素子が光電変換を行うための第1の電位と前記第1の電位と異なる第2の電位のうちのいずれかの電位とする電源と、を有する光電変換装置の駆動方法であって、
前記配線が前記第2の電位とされ且つ複数の前記信号線が所定の電位とされている間に、複数の前記パルスが複数の前記駆動線に印加されてなされるリフレッシュ動作において、
複数の前記駆動線に対して印加される複数の前記パルスのうち、連続して印加される2つの前記パルスの間で、前記パルスの立ち下がりのタイミングがずれており、且つ前記2つの前記パルスの前記パルス幅が一部重なってなる光電変換装置の駆動方法である。
A method for driving a photoelectric conversion device according to the present invention is such that pixels each including a photoelectric conversion element having two electrode layers and a switch element connected to one electrode layer of the photoelectric conversion element are in a row direction and a column direction. Is arranged in multiple,
A plurality of drive lines connected to the plurality of switch elements arranged in the row direction and a plurality of signal lines connected to the plurality of switch elements arranged in the column direction;
Control means for applying a pulse having a pulse width for turning on the switch element and a falling edge for turning off the switch element to each drive line; and the other of the photoelectric conversion elements of the plurality of pixels A power source having a wiring commonly connected to the electrode layers of the first and second potentials different from the first potential for the photoelectric conversion element to perform photoelectric conversion; A method of driving a photoelectric conversion device having
In a refresh operation in which a plurality of the pulses are applied to the plurality of drive lines while the wiring is set to the second potential and the plurality of signal lines are set to a predetermined potential,
Among the plurality of pulses applied to the plurality of drive lines, the falling timing of the pulse is shifted between the two pulses applied successively, and the two pulses This is a method for driving a photoelectric conversion device in which the pulse widths partially overlap.

本発明は、少なくとも連続する2本の駆動線がオンするタイミングを重ならせることにより、二次元エリア内での複数の信号出力を比較的短時間で一様にすることが可能となるように作用する。   In the present invention, it is possible to make a plurality of signal outputs in a two-dimensional area uniform in a relatively short time by overlapping timings at which at least two continuous drive lines are turned on. Works.

以上説明したように、リフレッシュ時の駆動線のオンパルスのタイミングを少なくとも連続する2本の駆動線がオンするタイミングが重なるようにずらして駆動することにより、信号線もしくはセンサバイアス線の電位が一瞬さがる時の電位変化量を小さくすることが比較的短時間のリフレッシュ時間内に可能となり、結果的に二次元エリア内での複数の信号出力を短時間で更に一様にし、パネルの品質を更に向上させることが可能となる。   As described above, the potential of the signal line or sensor bias line is momentarily lost by driving the on-line timing of the drive line at the time of refreshing so that at least the two consecutive drive lines turn on. It is possible to reduce the amount of potential change within a short time within a relatively short refresh time, and as a result, multiple signal outputs in the two-dimensional area are made more uniform in a short time, further improving the panel quality. It becomes possible to make it.

以下、本発明の実施例について図面を用いて詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図2(a),(b)は本発明に係わる光電変換素子の構成を示す概略図である。図2(b)は図2(a)を図中A−Bで切り取った場合の断面図である。図2に示すように、光電変換素子はガラス基板7上のセンサ8とTFT9で構成されている。図2において、センサ8及びTFT9はアモルファスシリコン薄膜プロセスで同時に形成される。センサ8はMIS型センサである。センサ8及びTFT9はガラス基板7上に下メタル層10、絶縁層11、半導体層12、n+ 層13、上メタル層14及び図示しない保護層(アモルファスシリコン窒化膜又はポリイミドなど)を順次成膜、パターニングすることにより形成される。 2A and 2B are schematic views showing the configuration of the photoelectric conversion element according to the present invention. FIG. 2B is a cross-sectional view of FIG. 2A taken along line AB. As shown in FIG. 2, the photoelectric conversion element includes a sensor 8 and a TFT 9 on a glass substrate 7. In FIG. 2, the sensor 8 and the TFT 9 are simultaneously formed by an amorphous silicon thin film process. The sensor 8 is a MIS type sensor. For the sensor 8 and the TFT 9, a lower metal layer 10, an insulating layer 11, a semiconductor layer 12, an n + layer 13, an upper metal layer 14 and a protective layer (not shown) (such as an amorphous silicon nitride film or polyimide) are sequentially formed on a glass substrate 7. , By patterning.

図3は、図2の光電変換素子の働きを示す等価回路である。センサ8に入射した光量に応じて電荷が発生し、その電荷をTFT9で図示しない読みとり装置に転送することによって、読みとり動作を行うものである。   FIG. 3 is an equivalent circuit showing the function of the photoelectric conversion element of FIG. A charge is generated according to the amount of light incident on the sensor 8, and the charge is transferred to a reading device (not shown) by the TFT 9 to perform a reading operation.

次に図3に示した光電変換素子を3×3個配置した光電変換装置の全体回路図を図4に示す。   Next, FIG. 4 shows an overall circuit diagram of a photoelectric conversion device in which 3 × 3 photoelectric conversion elements shown in FIG. 3 are arranged.

図4において、S11〜S33は光電変換素子で下部電極側をG、上部電極側をDで示している。C11〜C33は蓄積用コンデンサであり、光電変換素子S11〜S33がコンデンサの働きをするため等価回路上このように示している。T11〜T33は転送用TFTである。Vsは読み出し用電源、Vgはリフレッシュ用電源であり、それぞれスイッチSWs,SWgを介して全光電変換素子S11〜S33のD電極に接続されている。スイッチSWsはインバータを介して、スイッチSWgは直接にリフレッシュ制御回路RFに接続されており、リフレッシュ期間はスイッチSWgがオンするよう制御されている。   In FIG. 4, S11 to S33 are photoelectric conversion elements, and the lower electrode side is indicated by G and the upper electrode side is indicated by D. C11 to C33 are storage capacitors, and the photoelectric conversion elements S11 to S33 function as capacitors and are shown in this way on the equivalent circuit. T11 to T33 are transfer TFTs. Vs is a power source for reading and Vg is a power source for refreshing, which are connected to the D electrodes of all the photoelectric conversion elements S11 to S33 via switches SWs and SWg, respectively. The switch SWs is directly connected to the refresh control circuit RF via the inverter, and the switch SWg is controlled to be turned on during the refresh period.

上記光電変換装置は計9個の画素を3つのブロックに分け1ブロックあたり3画素の出力を同時に転送し、この信号配線SIGを通して検出用集積回路ICによって順次出力に変換され出力される(Vout)。また1ブロック内の3画素を横方向に配置し、3ブロックを順に縦に配置することにより各画素を二次元的に配置している。   The photoelectric conversion device divides a total of nine pixels into three blocks and simultaneously transfers the output of three pixels per block, and is sequentially converted into an output by the detection integrated circuit IC through this signal wiring SIG and output (Vout). . Each pixel is arranged two-dimensionally by arranging three pixels in one block in the horizontal direction and arranging the three blocks in the vertical direction in order.

また、画素上部には、ヨウ化セシウム(CsI)等の蛍光体が形成される場合がある。上方よりX線(X−ray)が入射すると蛍光体により光に変換され、この光が光電変換素子に入射される。   In addition, a phosphor such as cesium iodide (CsI) may be formed on the top of the pixel. When X-rays (X-ray) are incident from above, the phosphors convert the light into light, and the light enters the photoelectric conversion element.

次に上記光電変換装置の動作について説明する。まず、本発明の先行技術となる光電変換装置の動作について図4及び図5のタイミングチャートを用いて説明する。   Next, the operation of the photoelectric conversion device will be described. First, the operation of the photoelectric conversion device as the prior art of the present invention will be described with reference to the timing charts of FIGS.

はじめにシフトレジスタSR1およびSR2により制御配線g1〜g3、s1〜s3にHiレベルが印加される。すると転送用TFT・T11〜T33とスイッチM1〜M3がオンして導通し、全光電変換素子S11〜S33のG電極はGND電位になる(積分検出器Ampの入力端子はGND電位に設計されているため)。同時にリフレッシュ制御回路RFがHiレベルを出力しスイッチSWgがオンし全光電変換素子S11〜S33のD電極はリフレッシュ用電源Vgにより正電位になる。すると全光電変換素子S11〜S33はリフレッシュモードになりリフレッシュされる。つぎにリフレッシュ制御回路RFがLoレベルを出力しスイッチSWsがオンし全光電変換素子S11〜S33のD電極は読み取り用電源Vsにより更に高い正電位になる。すると全光電変換素子S11〜S33は光電変換モードになり同時にコンデンサC11〜C33は初期化される。この状態でシフトレジスタSR1およびSR2により制御配線g1〜g3、s1〜s3にLoレベルが印加される。すると転送用TFT・T11〜T33のスイッチM1〜M3がオフし、全光電変換素子S11〜S33のG電極はDC的にはオープンになるがコンデンサC11〜C33によって電位は保持される。しかしこの時点ではX線は入射されていないため全光電変換素子S11〜S33には光は入射されず光電流は流れない。この状態でX線がパルス的に出射され人体等を通過し蛍光体に入射すると光に変換され、その光がそれぞれの光電変換素子S11〜S33に入射する。この光は人体等の内部構造の情報が含まれている。この光により流れた光電流は電荷としてそれぞれのコンデンサC11〜C33に蓄積されX線の入射終了後も保持される。   First, the Hi level is applied to the control wirings g1 to g3 and s1 to s3 by the shift registers SR1 and SR2. Then, the transfer TFTs T11 to T33 and the switches M1 to M3 are turned on and become conductive, and the G electrodes of all the photoelectric conversion elements S11 to S33 are set to the GND potential (the input terminal of the integration detector Amp is designed to the GND potential). Because). At the same time, the refresh control circuit RF outputs a Hi level, the switch SWg is turned on, and the D electrodes of all the photoelectric conversion elements S11 to S33 are set to a positive potential by the refresh power supply Vg. Then, all the photoelectric conversion elements S11 to S33 enter the refresh mode and are refreshed. Next, the refresh control circuit RF outputs a Lo level, the switch SWs is turned on, and the D electrodes of all the photoelectric conversion elements S11 to S33 are set to a higher positive potential by the reading power source Vs. Then, all the photoelectric conversion elements S11 to S33 enter the photoelectric conversion mode, and the capacitors C11 to C33 are initialized at the same time. In this state, the Lo level is applied to the control wirings g1 to g3 and s1 to s3 by the shift registers SR1 and SR2. Then, the switches M1 to M3 of the transfer TFTs T11 to T33 are turned off, and the G electrodes of all the photoelectric conversion elements S11 to S33 are opened in terms of DC, but the potential is held by the capacitors C11 to C33. However, since no X-rays are incident at this time, no light enters the photoelectric conversion elements S11 to S33 and no photocurrent flows. In this state, X-rays are emitted in a pulsed manner, pass through the human body, etc., and enter the phosphor, and are converted into light, and the light enters each of the photoelectric conversion elements S11 to S33. This light contains information on the internal structure of the human body and the like. The photocurrent flowing by this light is accumulated in each of the capacitors C11 to C33 as electric charges and is held even after the X-ray incidence is completed.

つぎにシフトレジスタSR1により制御配線g1にHiレベルの制御パルスが印加され、シフトレジスタSR2の制御配線s1〜s3への制御パルス印加によって転送用TFT・T11〜T33のスイッチM1〜M3を通してv1〜v3が順次出力される。同様にシフトレジスタSR1,SR2の制御により他の光信号も順次出力される。これにより人体等の内部構造の二次元情報がv1〜v9として得られる。静止画像を得る場合はここまでの動作であるが動画像を得る場合はここまでの動作を繰り返す。   Next, a Hi-level control pulse is applied to the control wiring g1 by the shift register SR1, and v1 to v3 through the switches M1 to M3 of the transfer TFTs T11 to T33 by applying control pulses to the control wirings s1 to s3 of the shift register SR2. Are output sequentially. Similarly, other optical signals are sequentially output under the control of the shift registers SR1 and SR2. Thereby, the two-dimensional information of the internal structure of the human body or the like is obtained as v1 to v9. The operation so far is performed when a still image is obtained, but the operation so far is repeated when a moving image is obtained.

上記光電変換装置では光電変換素子のD電極が共通に接続され、この共通の配線をスイッチSWgとスイッチSWsを介してリフレッシュ用電源Vgと読み取り用電源Vsの電位に制御している為、全光電変換素子を同時にリフレッシュモードと光電変換モードとに切り換えることができる。このため複雑な制御なくして1画素あたり1個のTFTで光出力を得ることができる。   In the photoelectric conversion device, the D electrodes of the photoelectric conversion elements are connected in common, and the common wiring is controlled to the potentials of the refresh power supply Vg and the read power supply Vs via the switches SWg and SWs. The conversion element can be simultaneously switched between the refresh mode and the photoelectric conversion mode. Therefore, light output can be obtained with one TFT per pixel without complicated control.

図5の動作においては、リフレッシュ動作が全Vg駆動線同時に行うため、g1〜g3のオンパルスは同時に立ち下がる。   In the operation of FIG. 5, since the refresh operation is performed simultaneously for all Vg drive lines, the on pulses of g1 to g3 fall simultaneously.

各駆動線g1〜g3は、図4における駆動線と信号線のクロス部容量CCR1及び駆動線とセンサバイアス線のクロス部容量CCR2により、g1〜g3のオンパルスが同時に立ち下がる瞬間に信号線とセンサバイアス線の電位が一瞬さがる。   Each of the drive lines g1 to g3 is connected to the signal line and the sensor at the moment when the ON pulses of g1 to g3 fall at the same time due to the cross section capacitance CCR1 of the drive line and the signal line and the cross section capacitance CCR2 of the drive line and the sensor bias line in FIG. The potential of the bias line drops for a moment.

信号線とセンサバイアス線のそれぞれの電位は一瞬さがった後、それぞれの時定数により元の電位に回復する。   The potentials of the signal line and the sensor bias line are restored to the original potential by the respective time constants after a moment.

しかし、それぞれの電位は一瞬さがった後、元の電位に回復するまでの時間が充分にとれない場合、即ち図5においてX−rayをオンし、センサにより光電変換を行った後、g1をオンし、TFTにより信号電荷を転送するまでの間の時間が充分にとれない場合は、信号線もしくはセンサバイアス線の電位が元の電位に回復する前に信号電荷を転送するため、理想的な出力が充分に得られない場合が考えられる。   However, after a short time for each potential, if it is not enough time to recover to the original potential, that is, X-ray is turned on in FIG. 5 and photoelectric conversion is performed by the sensor, and then g1 is turned on. If the time until the signal charge is transferred by the TFT is not sufficient, the signal charge is transferred before the potential of the signal line or sensor bias line is restored to the original potential. It is conceivable that a sufficient value cannot be obtained.

また、信号線とセンサバイアス線のそれぞれの時定数が小さくできない場合、即ち信号線もしくは、センサバイアス線の配線抵抗が大きい場合、もしくは浮遊容量が大きい場合も、信号線もしくはセンサバイアス線の電位が元の電位に回復する前に信号電荷を転送するため、理想的な出力が充分得られない場合が考えられる。   In addition, when the time constant of each of the signal line and the sensor bias line cannot be reduced, that is, when the wiring resistance of the signal line or the sensor bias line is large or the stray capacitance is large, the potential of the signal line or the sensor bias line is Since the signal charge is transferred before the original potential is restored, there may be a case where an ideal output cannot be obtained sufficiently.

これは、信号出力Voutが信号線もしくはセンサバイアス線の電位に依存することによる。   This is because the signal output Vout depends on the potential of the signal line or sensor bias line.

このような場合、信号電荷を読み出す場合の読み出しの初めの信号出力、即ち図5においてVoutのv1の出力が若干理想でないことが起きる場合が考えられる。   In such a case, there may be a case where the signal output at the beginning of reading when reading out signal charges, that is, the output of v1 of Vout in FIG.

本発明は二次元エリア内での複数の信号出力を更に一様にし、パネルの品質を更に向上させるために、上述したようなg1〜g3のオンパルスの立ち下がりのタイミングをずらす。こうすることで、信号線もしくはセンサバイアス線の電位が一瞬さがる時の電位変化量を小さくすることができる。   In the present invention, in order to make a plurality of signal outputs in a two-dimensional area more uniform and further improve the quality of the panel, the timing of falling of the on-pulses of g1 to g3 as described above is shifted. By doing so, the amount of potential change when the potential of the signal line or the sensor bias line falls for a moment can be reduced.

図1は、本発明に係る一実施例を説明するための動作を示すタイミングチャートである。なお、図5と同一動作の部分には同一符号を付してあり、説明を省略する。   FIG. 1 is a timing chart showing an operation for explaining an embodiment according to the present invention. In addition, the same code | symbol is attached | subjected to the part of the same operation | movement as FIG. 5, and description is abbreviate | omitted.

図1に示すタイミングチャートにおいて特徴的な点は、上述したように、g1〜g3のオンパルスのタイミングをずらしている点である。これにより信号線もしくはセンサバイアス線の電位が一瞬さがる時の電位変化量を小さくすることが可能となり、結果的に信号線もしくはセンサバイアス線の電位が元の電位に回復する時間が短縮される。   A characteristic point in the timing chart shown in FIG. 1 is that the on-pulse timings of g1 to g3 are shifted as described above. This makes it possible to reduce the amount of potential change when the potential of the signal line or sensor bias line falls for a moment, and as a result, the time for restoring the potential of the signal line or sensor bias line to the original potential is shortened.

更に特徴的な点は、g1〜g3のオンパルスのタイミングのずらし方において、少なくとも連続する2本の駆動線(g1とg2、又はg2とg3)がオンするタイミングがパルスの幅の半分程重なっている点である。このように少なくとも連続する2本の駆動線がオンするタイミングが重なるように駆動することにより、全駆動線をリフレッシュする時間が短くでき、動画のような高速駆動が可能になる。   Furthermore, the characteristic point is that the timing at which at least two continuous drive lines (g1 and g2, or g2 and g3) are turned on overlaps by about half the width of the pulse in the way of shifting the timing of the on pulses of g1 to g3. It is a point. Thus, by driving so that at least two continuous drive lines are turned on, the time for refreshing all the drive lines can be shortened, and high-speed driving like a moving image becomes possible.

以上説明したように、リフレッシュ時の駆動線のオンパルスのタイミングを少なくとも連続する2本の駆動線がオンするタイミングが重なるようにずらして駆動することにより、信号線もしくはセンサバイアス線の電位が一瞬さがる時の電位変化量を小さくすることが比較的短時間のリフレッシュ時間内に可能となり、結果的に二次元エリア内での複数の信号出力を短時間で更に一様にし、パネルの品質を更に向上させることが可能となる。   As described above, the potential of the signal line or sensor bias line is momentarily lost by driving the on-line timing of the drive line at the time of refreshing so that at least the two consecutive drive lines turn on. It is possible to reduce the amount of potential change within a short time within a relatively short refresh time, and as a result, multiple signal outputs in the two-dimensional area are made more uniform in a short time, further improving the panel quality. It becomes possible to make it.

上記光電変換装置では9個の画素を3×3に二次元配置し3画素ずつ同時に、3回に分割して転送・出力したがこれに限らず、例えば縦横1mmあたり5×5個の画素を2000×2000個の画素として二次元的に配置すれば40cm×40cmのX線検出器が得られる。これをX線フィルムの代わりにX線発生器と組み合わせX線レントゲン装置を構成すれば胸部レントゲン検診や乳ガン検診に使用できる。するとフィルムと異なり瞬時にその出力をCRT等の表示装置で映し出すことが可能で、さらに出力をディジタルに変換しコンピュータで画像処理して目的に合わせた出力に変換することも可能である。また光磁気ディスク等の情報記録媒体に保管もでき、過去の画像を瞬時に検索することもできる。また感度もフィルムより良く人体に影響の少ない微弱なX線で鮮明な画像を得ることもできる。   In the above photoelectric conversion device, nine pixels are two-dimensionally arranged in 3 × 3, and three pixels are divided and transferred at the same time three times. However, the present invention is not limited to this. For example, 5 × 5 pixels per 1 mm in length and width If it is arranged two-dimensionally as 2000 × 2000 pixels, an X-ray detector of 40 cm × 40 cm can be obtained. If this is combined with an X-ray generator instead of an X-ray film to constitute an X-ray X-ray apparatus, it can be used for chest X-ray screening and breast cancer screening. Then, unlike film, the output can be instantly displayed on a display device such as a CRT, and the output can be converted to digital and converted into an output suitable for the purpose by computer processing. It can also be stored in an information recording medium such as a magneto-optical disk, and past images can be retrieved instantly. It is also possible to obtain a clear image with weak X-rays that have better sensitivity than films and have little effect on the human body.

図6にその例を示す。ここで101が患者、102がX線源、103が蛍光体、104が光電変換装置、105が撮影スイッチ、106がディスプレイ、107が制御回路、108が駆動回路である。図6において、X線を光に変換する蛍光体と2次元センサパネル及びX線源、X線源の駆動回路、X線源の制御回路から成り立つX線撮像装置を構成している。   An example is shown in FIG. Here, 101 is a patient, 102 is an X-ray source, 103 is a phosphor, 104 is a photoelectric conversion device, 105 is an imaging switch, 106 is a display, 107 is a control circuit, and 108 is a drive circuit. In FIG. 6, an X-ray imaging apparatus comprising a phosphor that converts X-rays into light, a two-dimensional sensor panel, an X-ray source, a drive circuit for the X-ray source, and a control circuit for the X-ray source is configured.

本発明に係る第一実施例を説明するための動作を示すタイミングチャートである。It is a timing chart which shows the operation | movement for demonstrating the 1st Example which concerns on this invention. (a)は本発明に係わる光電変換装置における各構成素子の平面図、(b)はその断面図である。(A) is a top view of each component in the photoelectric conversion apparatus concerning this invention, (b) is the sectional drawing. 本発明に係わる光電変換装置における1素子の等価回路である。2 is an equivalent circuit of one element in the photoelectric conversion device according to the present invention. 本発明に係わる光電変換装置における全体回路図である。It is a whole circuit diagram in the photoelectric conversion apparatus concerning this invention. 先行技術に係わる光電変換装置の動作を示すタイミングチャートである。It is a timing chart which shows operation | movement of the photoelectric conversion apparatus concerning a prior art. X線撮像システムを示す概略的構成図である。1 is a schematic configuration diagram showing an X-ray imaging system.

符号の説明Explanation of symbols

S11〜S33 センサ
T11〜T33 TFT
C11〜C33 コンデンサ
SR1,SR2 シフトレジスタ
IC 検出用集積回路
S11-S33 sensor T11-T33 TFT
C11 to C33 Capacitors SR1, SR2 Shift register IC Integrated circuit for detection

Claims (8)

2つの電極層を有する光電変換素子と、前記光電変換素子の一方の電極層に接続されたスイッチ素子と、をそれぞれ備えた画素が行方向と列方向に複数配列されており、
前記行方向に配列された複数の前記スイッチ素子に接続された駆動線と、前記列方向に配列された複数の前記スイッチ素子に接続された信号線と、をそれぞれ複数有し、
前記スイッチ素子をオンしているパルス幅と前記スイッチ素子をオンからオフにする立ち下がりとを有するパルスを各駆動線に対して印加する制御手段と、前記複数の画素の前記光電変換素子の他方の電極層に共通に接続された配線を、前記光電変換素子が光電変換を行うための第1の電位と前記第1の電位と異なる第2の電位のうちのいずれかの電位とする電源と、を有する光電変換装置の駆動方法であって、
前記配線が前記第2の電位とされ且つ複数の前記信号線が所定の電位とされている間に、複数の前記パルスが複数の前記駆動線に対して印加されてなされるリフレッシュ動作において、
複数の前記駆動線に対して印加される複数の前記パルスのうち、連続して印加される2つの前記パルスの間で、前記パルスの立ち下がりのタイミングがずれており、且つ前記2つの前記パルスの前記パルス幅が一部重なってなる光電変換装置の駆動方法。
A plurality of pixels each having a photoelectric conversion element having two electrode layers and a switch element connected to one electrode layer of the photoelectric conversion element are arranged in a row direction and a column direction,
A plurality of drive lines connected to the plurality of switch elements arranged in the row direction and a plurality of signal lines connected to the plurality of switch elements arranged in the column direction;
A control means for applying a pulse having a pulse width for turning on the switch element and a falling edge for turning the switch element from ON to each drive line; and the other of the photoelectric conversion elements of the plurality of pixels And a power source having a wiring commonly connected to the electrode layer of the first and second potentials different from the first potential for the photoelectric conversion element to perform photoelectric conversion; A method of driving a photoelectric conversion device having
In a refresh operation in which a plurality of the pulses are applied to the plurality of drive lines while the wiring is at the second potential and the plurality of signal lines are at a predetermined potential,
Among the plurality of pulses applied to the plurality of drive lines, the timing of the falling of the pulse is shifted between the two pulses applied successively, and the two pulses A method for driving a photoelectric conversion device in which the pulse widths of the portions overlap.
前記光電変換素子は、前記一方の電極層と、前記他方の電極層と、前記一方の電極層と前記他方の電極層との間に設けられた絶縁層と、前記絶縁層と前記他方の電極層との間に設けられた半導体層と、前記半導体層と前記他方の電極層との間に設けられた高濃度不純物半導体層と、を有することを特徴とする請求項1に記載の光電変換装置の駆動方法。   The photoelectric conversion element includes the one electrode layer, the other electrode layer, an insulating layer provided between the one electrode layer and the other electrode layer, the insulating layer, and the other electrode. The photoelectric conversion according to claim 1, further comprising: a semiconductor layer provided between the semiconductor layer and a high-concentration impurity semiconductor layer provided between the semiconductor layer and the other electrode layer. Device driving method. 前記複数の光電変換素子上に、X線を光に変換する蛍光体を有し、前記X線は前記蛍光体にパルス的に入射されることを特徴とする請求項1又は請求項2に記載の光電変換装置の駆動方法。   3. The phosphor according to claim 1, further comprising a phosphor that converts X-rays into light on the plurality of photoelectric conversion elements, wherein the X-rays are incident on the phosphor in a pulsed manner. Driving method of the photoelectric conversion device. 前記電源は、前記配線を前記第1の電位とするための読み出し用電源と、前記配線を前記第2の電位とするためのリフレッシュ用電源と、前記読み出し用電源と前記リフレッシュ用電源との一方を前記配線に接続するためのスイッチと、を有し、前記第1の電位は前記第2の電位より高い正電位であることを特徴とする請求項1乃至請求項3のいずれか1項に記載の光電変換装置の駆動方法。   The power supply is one of a read power supply for setting the wiring to the first potential, a refresh power supply for setting the wiring to the second potential, the read power supply, and the refresh power supply. 4. The switch according to claim 1, wherein the first potential is a positive potential higher than the second potential. 5. A driving method of the photoelectric conversion device. 前記パルスは、複数の前記駆動線に順次印加されることを特徴とする請求項1乃至請求項のいずれか1項に記載の光電変換装置の駆動方法。 The pulse driving method of a photoelectric conversion device according to any one of claims 1 to 3, characterized in that it is sequentially applied to a plurality of said drive lines. 前記スイッチ素子は、前記一方の電極層と、前記他方の電極層と、前記一方の電極層と前記他方の電極層との間に設けられた絶縁層と、前記絶縁層と前記他方の電極層との間に設けられた半導体層と、前記半導体層と前記他方の電極層との間に設けられた高濃度不純物半導体層と、を有することを特徴とする請求項1乃至請求項5のいずれか1項に記載の光電変換装置の駆動方法。   The switch element includes the one electrode layer, the other electrode layer, an insulating layer provided between the one electrode layer and the other electrode layer, the insulating layer, and the other electrode layer. And a high-concentration impurity semiconductor layer provided between the semiconductor layer and the other electrode layer. A driving method of the photoelectric conversion device according to claim 1. 複数の前記光電変換素子と複数の前記スイッチ素子とは同一の基板上に設けられていることを特徴とする請求項1乃至請求項6のいずれか1項に記載の光電変換装置の駆動方法。   The method for driving a photoelectric conversion device according to claim 1, wherein the plurality of photoelectric conversion elements and the plurality of switch elements are provided on the same substrate. 前記光電変換によって前記光電変換素子に発生した電荷を、前記信号線を通して検出する為の検出手段と、を更に有する請求項1乃至請求項7のいずれか1項に記載の光電変換装置の駆動方法。   8. The method for driving a photoelectric conversion device according to claim 1, further comprising detection means for detecting charges generated in the photoelectric conversion elements by the photoelectric conversion through the signal lines. 9. .
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