JP4657173B2 - Thin film transistor - Google Patents

Description

The present invention relates to a method for manufacturing a thin film transistor by a droplet discharge method and a method for manufacturing a semiconductor device such as a light-emitting device or a liquid crystal display device.

Droplet ejection techniques represented by the piezo method and thermal jet method are attracting attention. Although this droplet discharge technique has been used for printing characters and images, attempts to apply it to the semiconductor field such as fine pattern formation have recently started.

In addition, in a method for forming a thin film transistor in the semiconductor field, there is a method in which a mask removing step is omitted (see Patent Document 1). In Patent Document 1, for example, a resist mask is formed in contact with an insulating film above a gate wiring, and in a process of adding impurities, the mask to which phosphorus is added is blackened, and serves as a protective film above a channel formation region. The use is described.
JP 2000-150904 A

In Patent Document 1, although a method for forming a resist mask is not specifically described, it is applied by a spin coating method in a general photolithography process. When a resist mask is formed by spin coating, there is a problem that the material of the mask is often wasted.

In general, when patterning is completed, a mask such as a resist is removed. Therefore, an ashing process, a peeling process, a cleaning process, and the like, which are processes for removing the mask, are required.

Therefore, an object of the present invention is to provide a simple method for manufacturing a thin film transistor that is used without removing a mask and does not require mask removal, a thin film transistor, and a semiconductor device having the thin film transistor.

In view of the above problems, the present invention is characterized in that a thin film transistor (TFT) is formed without removing a mask for patterning into a desired shape. That is, the thin film transistor of the present invention has a mask. In addition, the present invention does not need to leave a mask in every process, and includes a state in which a mask in at least one process remains. When leaving the masks for all the steps, it is preferable because the steps for all the masks can be reduced. However, if at least one step of the mask is left, the steps for the one-step mask can be reduced. Therefore, if at least one mask is left, the process can be expected to be shortened as compared with the case where all the masks are removed.

The mask can be formed by an inkjet method or a photolithography method.
For example, a mask can be formed by discharging a composition in which a mask material is mixed in a solvent (including a composition in which the mask material is dissolved or dispersed in the solvent) by an inkjet method. In particular, when a mask is formed by an ink jet method, a photolithography process such as exposure and development of the mask can be omitted. The ink jet method is preferable because it can reduce the material cost because the mask material can be used more effectively than the spin coating method used when forming a mask in the photolithography method.

In the present invention, the wiring may be formed by an inkjet method. For example, the wiring can be formed by discharging a composition (including a composition in which a conductor is dissolved or dispersed in a solvent) in which a conductor (a material constituting the wiring) is mixed in a solvent by an inkjet method. .

The step of discharging such a composition is preferably performed under reduced pressure. The solvent of the composition evaporates between the time when the composition is discharged and the material is landed on the object to be processed, so that the steps of drying and baking the composition can be omitted. Further, it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor.

At this time, the composition is ejected in the form of dots (droplets), or is ejected in the form of columns in which dots are connected. Moreover, it may be only described as dripping that a composition is discharged in the shape of a dot or a column. That is, since a plurality of dots are continuously ejected, they are not recognized as dots and may be ejected linearly.

In particular, when a wiring is formed by an inkjet method, a photolithography process such as exposure and development of a mask for patterning the wiring and an etching process for patterning the wiring can be omitted. Further, when it is necessary to remove the mask on the wiring, the mask cleaning step can be omitted. In addition, compared with a coating method such as a spin coating method, the inkjet method can effectively use a wiring material, so that the material cost can be reduced.

In particular, a semiconductor film is likely to require a mask because it is formed by a deposition method such as a plasma CVD method. Therefore, in the present invention, a thin film transistor is preferably formed without removing a mask for patterning a semiconductor film. Further, it is preferable to form a mask by an ink jet method. In this case, the mask can be used as a gate insulating film, an interlayer insulating film, or a part thereof. That is, the mask can function as an insulating film such as a gate insulating film or an interlayer insulating film. At this time, the mask is made of silicon (Si) and oxygen (O) in addition to the above materials.
And a skeleton structure is formed by the bond with, and the substituent contains at least hydrogen, or the substituent has fluorine,
It may be formed using a polymer material having at least one of an alkyl group or an aromatic hydrocarbon, a so-called siloxane, or a polymer material having a bond of silicon (Si) and nitrogen (N), a so-called polysilazane liquid material. .

A piezo method can be used as a droplet discharge method, a so-called inkjet method. The piezo method is also used in ink jet printers because of its excellent controllability of ink droplets and high degree of freedom in ink selection. Note that there are two types of piezo methods: MLP (Multi Layer Piezo) type and MLChip (Multi Layer Ceramic Hyper Integrated Piezo Segments) type. Depending on the material of the solvent, an ink jet method using a so-called thermal method in which a heating element generates heat to generate bubbles and push out the solution may be used.

As described above, a thin film transistor can be formed by a simple method that does not require a mask material peeling step. Further, since the mask material is formed by the ink jet method, a photolithography process such as exposure and development of the mask material can be omitted. in this way,
The number of processes can be reduced, and the product delivery period can be shortened. In particular, it is possible to omit the cleaning process of the substrate end face which can be performed when the mask is formed by the spin coating method. Compared with a spin coating method or the like, the inkjet method can effectively use a mask material, so that the material cost can be reduced.

Embodiments of the present invention will be described below with reference to the drawings. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In this embodiment, an example of a method for manufacturing a thin film transistor will be described.

First, as illustrated in FIG. 1A, a base film 101 is formed over a substrate 100 having an insulating surface. As the substrate 100, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a stainless steel substrate, or the like can be used. Polyethylene
-Plastic such as terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and substrates made of flexible synthetic resin such as acrylic are generally compared with other substrates. Although the heat resistant temperature tends to be low, it can be used as long as it can withstand the processing temperature in the manufacturing process.

The base film 101 is made of alkali metal such as Na or alkaline earth metal contained in the substrate 100,
It is provided for preventing diffusion into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Therefore, silicon oxide that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film,
It is formed using an insulating film such as silicon nitride or silicon nitride oxide. Note that the base film 101 may have a single-layer structure or a stacked structure. In this embodiment mode, a plasma CVD method is used, a plasma CVD method is used as the first base film, the source gas is SiH ₄ , N ₂ O, NH ₃ , H ₂ , and the pressure is 0.
A silicon oxynitride film formed at 3 Torr, RF power of 50 W, RF frequency of 60 MHz, and substrate temperature of 400 ° C. is formed with a thickness of 10 to 200 nm (preferably 50 to 200 nm). The gas is SiH ₄ , N ₂ O, the pressure is 0.3 Torr,
A silicon oxynitride film formed with an RF power of 150 W, an RF frequency of 60 MHz, and a substrate temperature of 400 ° C. is stacked in the order of 50 to 200 nm (preferably 200 to 150 nm).

When using a substrate that contains alkali metal or alkaline earth metal, such as a glass substrate, stainless steel substrate, or plastic substrate, it is effective to provide a base film from the viewpoint of preventing impurity diffusion. In the case where diffusion of impurities does not cause any problem, such as a quartz substrate, it is not necessarily provided.

A conductive film 102 is formed with a thickness of 5 nm to 500 nm over the base film. The conductive film may have either a single layer structure or a stacked structure. As the conductive film 102, a film formed of an element of aluminum, titanium, molybdenum, tungsten, or silicon, or an alloy film using these elements may be used. In addition, the conductive film can be formed using any one of an inkjet method, a CVD method, and a sputtering method. In this embodiment, a tungsten film is formed by a sputtering method.

An N-type semiconductor film 103 is formed over the conductive film 102. The semiconductor film having an N type can be formed by a plasma CVD method, a sputtering method, or the like. Note that an N-type semiconductor film may be provided as necessary. When provided, a resistance such as contact resistance is lowered, which is preferable.

As shown in FIG. 1B, it is preferable to form the mask 105 by an inkjet method, but the mask may be formed by a photolithography method. As the mask material, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), or a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene) can be used. In this embodiment mode, a mask is formed by an inkjet method using polyimide. Heat treatment may be performed at 150 to 300 ° C. after discharging polyimide to a desired portion by an ink jet method. Using the mask formed in this manner, the N-type semiconductor film and conductive film are patterned. The patterned conductive film
Functions as a source electrode and a drain electrode.

As shown in FIG. 1C, the semiconductor film 106 is formed without performing the mask removal step. The film thickness of the semiconductor film is 25 to 200 nm (preferably 30 to 60 nm). As the amorphous semiconductor, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%. Further, the semiconductor is selected from a semi-amorphous semiconductor in which crystal grains are dispersed in an amorphous semiconductor and a microcrystalline semiconductor in which crystals of 0.5 nm to 20 nm can be observed in the amorphous semiconductor. Any semiconductor film may be used. Microcrystals capable of observing 0.5 nm to 20 nm crystals are also called so-called microcrystals (μc). Semi-amorphous silicon (also referred to as SAS), which is a semi-amorphous semiconductor,
It can be obtained by glow discharge decomposition of silicide gas. A typical silicide gas is SiH _4. Besides, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ ,
SiF ₄ or the like can be used. The formation of the SAS can be facilitated by diluting the silicide gas with one or plural kinds of rare gas elements selected from hydrogen, hydrogen and helium, argon, krypton, and neon. It is preferable to dilute the silicide gas at a dilution ratio in the range of 10 times to 1000 times. Of course, the reaction of the coating by glow discharge decomposition is performed under reduced pressure, but the pressure may be in the range of about 0.1 Pa to 133 Pa. The power for forming the glow discharge may be high frequency power of 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or less, and a substrate heating temperature of 100 to 200 ° C. is recommended.

In this embodiment, an amorphous semiconductor film containing silicon as a main component (also referred to as an amorphous silicon film or amorphous silicon) is formed by a plasma CVD method. Thereafter, the amorphous semiconductor film is patterned into a desired shape. Note that the semiconductor film may be formed by an inkjet method.

An insulating film 107 that functions as a gate insulating film is formed so as to cover the semiconductor film 106. The insulating film can have a stacked structure or a single layer structure. As the insulating film, an insulator such as silicon oxide or silicon nitride oxide can be formed by a plasma CVD method. Note that an insulating film may be formed by an inkjet method.

As shown in FIG. 1D, a conductive film 108 functioning as a gate electrode is formed. Conductive film 1
As an 08, an element selected from tantalum, tungsten, titanium, molybdenum, aluminum, and copper, or an alloy material or a compound material containing the element as a main component may be used. As the conductive film, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used. In particular, when the film thickness of the source electrode and the drain electrode is large, it can be used as alignment for forming the gate electrode, which is preferable. The conductive film can be formed by a sputtering method, a plasma CVD method, or an inkjet method.

As described above, the thin film transistor provided up to the gate electrode is completed. The thin film transistor in this embodiment is a so-called top gate thin film transistor in which a gate electrode is provided above a semiconductor film. A substrate provided with a plurality of such thin film transistors is formed as T.
Indicated as FT substrate.

Further, the thin film transistor thus formed has a mask used for patterning the conductive film. In this embodiment mode, a source electrode, a drain electrode, and a mask provided when patterning an N-type semiconductor film provided as necessary are provided, and the mask is provided over the conductive film with the mask interposed therebetween. A thin film transistor having a semiconductor film. Of course, the thin film transistor of the present invention may have a mask used in other patterning steps.

As described above, a thin film transistor can be formed by a simple method that does not require a mask material peeling step.

Further, when a mask is formed by an ink jet method, a photolithography process such as exposure and development of a mask material can be omitted. Compared with spin coating, etc.
The ink jet method can effectively use a mask material, so that the material cost can be reduced.

In the case of a low-temperature process for forming a thin film transistor having an amorphous semiconductor film, the heat resistance of the mask is not a problem. On the other hand, the heat resistance of the mask is a problem in the field of LSIs that are forced to undergo high-temperature processes. Therefore, it is preferable to use a step of leaving a mask without removing it in a low-temperature process for forming an amorphous semiconductor film as in this embodiment mode.

(Embodiment 2)
In this embodiment, a method for manufacturing a thin film transistor, which is different from that in the above embodiment, will be described. In this embodiment mode, a point different from the above embodiment mode is that a conductive film is formed by an inkjet method, and further, the conductive film is patterned using a mask. Therefore, other manufacturing steps are the same as those in the above embodiment, and a detailed description thereof is omitted.

When the conductive film formed by the inkjet method is formed larger than the desired width,
It is preferable to pattern the conductive film using a mask. Especially as pixels get smaller,
A fine line width is required for the wiring formed by the inkjet method. Therefore, the conductive film formed by an inkjet method may be patterned using a mask as necessary.

As shown in FIG. 2A, a base film 101 is formed over a substrate 100 as in the above embodiment. Next, in this embodiment mode, the conductive film 102 is formed by an inkjet method. Specifically, a solvent in which a conductor is mixed is discharged by an inkjet method. As conductor, gold, silver, copper, platinum, palladium, tungsten, nickel, tantalum, bismuth, lead,
Indium, tin, zinc, titanium, or aluminum, alloys thereof, dispersible nanoparticles thereof, or silver halide fine particles can be used. In particular, low resistance silver or copper may be used. However, in the case of using copper, an insulating film containing nitrogen is formed as a barrier film in order to prevent copper from diffusing into the semiconductor film or the like. In this embodiment mode, a composition in which silver is mixed into tetradecane is discharged by an inkjet method.

The discharge means for discharging the composition is the same as in the above embodiment. That is, the material to be discharged may be changed to the conductive film material.

The composition thus discharged is heated to 150 ° C. to 400 ° C. to form a source electrode and a drain electrode.

After that, as in the above embodiment, an N-type semiconductor film is formed as necessary.

As shown in FIG. 2B, a mask 105 is formed by an inkjet method or a photolithography method as in the above embodiment. Using the mask 105, a source electrode and a drain electrode, and an N-type semiconductor film provided as necessary are patterned. As a result, further miniaturized source and drain electrodes can be formed.

As shown in FIG. 2C, a semiconductor film 106, an insulating film 107 functioning as a gate insulating film, and a conductive film 108 functioning as a gate electrode are formed as in the above embodiment mode.

As described above, the thin film transistor provided up to the gate electrode is completed. The thin film transistor in this embodiment is a so-called top gate thin film transistor in which a gate electrode is provided above a semiconductor film. A substrate provided with a plurality of such thin film transistors is formed as T.
Indicated as FT substrate.

In this embodiment mode, since the conductive film to be the source electrode and the drain electrode is formed by an ink jet method, the conductive film can be used effectively. Further, by patterning using a mask, a miniaturized source electrode and drain electrode can be formed.

Further, the thin film transistor thus formed has a mask used for patterning the conductive film. In this embodiment mode, the thin film transistor includes a source electrode, a drain electrode, and a mask provided when patterning an N-type semiconductor film provided as necessary. Of course, the thin film transistor of the present invention may have a mask used in other patterning steps.

As described above, a thin film transistor can be formed by a simple method that does not require a mask material peeling step.

Further, when a mask is formed by an ink jet method, a photolithography process such as exposure and development of a mask material can be omitted. Compared with spin coating, etc.
The ink jet method can effectively use a mask material, so that the material cost can be reduced.

In the case of a low-temperature process for forming a thin film transistor having an amorphous semiconductor film, the heat resistance of the mask is not a problem. On the other hand, the heat resistance of the mask is a problem in the field of LSIs that are forced to undergo high-temperature processes. Therefore, it is preferable to use a step of leaving a mask without removing it in a low-temperature process for forming an amorphous semiconductor film as in this embodiment mode.

(Embodiment 3)
In this embodiment, a method for manufacturing a thin film transistor, which is different from that in the above embodiment, will be described. In this embodiment mode, a point different from the above embodiment mode is that a conductive film functioning as a gate electrode is patterned using a mask. Therefore, other manufacturing steps are the same as those in the above embodiment, and a detailed description thereof is omitted.

As shown in FIG. 3A, a base film 101 is formed over a substrate 100 as in the above embodiment. After that, as in the above embodiment, a conductive film 102 functioning as a source electrode and a drain electrode, and an N-type semiconductor film 103 are formed as needed. The conductive film and the N-type semiconductor film are patterned using a mask 105 formed by an inkjet method or a photolithography method. Then, a semiconductor film 106 and an insulating film 107 functioning as a gate insulating film are formed.

After that, using the same material as the above embodiment, sputtering method, plasma CVD method,
Alternatively, the conductive film 108 is formed over the entire surface by an inkjet method. Next, a mask is formed over the conductive film by an inkjet method or a photolithography method. For example, polyimide, polyvinyl alcohol, or the like is discharged by an ink jet method.

As shown in FIG. 3B, the conductive film is patterned using a mask. Further, as in the above embodiment, a conductive film may be formed by an ink jet method, and further patterned and refined using a mask.

As described above, in this embodiment mode, the thin film transistor provided up to the gate electrode is completed without removing the mask for patterning the conductive films 102 and 108. The thin film transistor in this embodiment is a so-called top gate thin film transistor in which a gate electrode is provided above a semiconductor film. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

In addition, the thin film transistor thus formed has a mask used for patterning the conductive films 102 and 108. In this embodiment mode, a source electrode and a drain electrode, a mask provided when patterning an N-type semiconductor film provided as necessary, and a mask provided when patterning a gate electrode are used. A thin film transistor. Of course, the thin film transistor of the present invention may have a mask used in other patterning steps.

As described above, a thin film transistor can be formed by a simple method that does not require a mask material peeling step, that is, a cleaning step.

Further, when a mask is formed by an ink jet method, a photolithography process such as exposure and development of a mask material can be omitted. Compared with spin coating, etc.
The ink jet method can effectively use a mask material, so that the material cost can be reduced.

In the case of a low-temperature process for forming a thin film transistor having an amorphous semiconductor film, the heat resistance of the mask is not a problem. On the other hand, the heat resistance of the mask is a problem in the field of LSIs that are forced to undergo high-temperature processes. Therefore, it is preferable to use a step of leaving a mask without removing it in a low-temperature process for forming an amorphous semiconductor film as in this embodiment mode.

(Embodiment 4)
In this embodiment, an example of a method for manufacturing a thin film transistor, which is different from that in the above embodiment, will be described. This embodiment is different from the above embodiment in that a mask for patterning a semiconductor film is used for a gate insulating film. Therefore, other manufacturing steps are the same as those in the above embodiment, and a detailed description thereof is omitted.

As shown in FIG. 4A, a base film 101 is formed over a substrate 100 having an insulating surface. A conductive film 102 is formed on the base film by sputtering, and an N-type semiconductor film 1 if necessary.
03 are formed in order. Although not illustrated, in this embodiment, a mask is formed over an N-type semiconductor film by an inkjet method or a photolithography method. For example, the mask
It can be formed by discharging polyimide, polyvinyl alcohol, or the like by an inkjet method. Then, the conductive film 102 and the N-type semiconductor film 103 are patterned using the mask. Thereafter, the mask is removed. A semiconductor film 106 is formed over the N-type semiconductor film. A mask 107 is formed so as to cover the semiconductor film 106 by an inkjet method or a photolithography method. Thereafter, the semiconductor film is patterned using the mask. Further, this embodiment mode is characterized in that the mask is not removed but used as a gate insulating film. Therefore, the mask is preferably formed using so-called siloxane or polysilazane in addition to polyimide and polyvinyl alcohol. Thereafter, the conductive film 1 functioning as a gate electrode
08 is formed.

FIG. 4B shows a case where a mask for patterning the source electrode and the drain electrode is left based on the above embodiment mode. Other structures are the same as those in FIG. 4A, and detailed description thereof is omitted.

As shown in FIG. 4B, a base film 101 is formed over a substrate 100 having an insulating surface, and a conductive film 102 is formed over the base film by sputtering, and an N-type semiconductor film 10 as necessary.
3 are formed in order. In this embodiment, a mask 105 is formed over an N-type semiconductor film by an inkjet method or a photolithography method. Then, the conductive film 102 and the N-type semiconductor film 103 are patterned using the mask.

After that, the semiconductor film 106 is formed without removing the mask 105. A mask is formed so as to cover the semiconductor film 106 by an inkjet method or a photolithography method. Thereafter, the semiconductor film is patterned using the mask. Further, this embodiment mode is characterized in that the mask insulating film 107 is used without removing the mask. After that, a conductive film 108 that functions as a gate electrode is formed.

4A and 4B, a conductive film functioning as a source electrode and a drain electrode may be formed by an inkjet method based on the above embodiment mode. And it is used as a gate insulating film, without removing the mask which patterns a semiconductor film.

The thin film transistor thus formed has a mask used for patterning at least a semiconductor film. Further, in this embodiment mode, a thin film transistor using a mask used for patterning a semiconductor film as a gate insulating film can be formed. Of course, the thin film transistor of the present invention may have a mask used in other patterning steps. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

As described above, a thin film transistor can be formed by a simple method that does not require a mask material peeling step for patterning a semiconductor film and a conductive film, that is, a cleaning step.

Further, when a mask is formed by an ink jet method, a photolithography process such as exposure and development of a mask material can be omitted. Compared with spin coating, etc.
The ink jet method can effectively use a mask material, so that the material cost can be reduced.

In the case of a low-temperature process for forming a thin film transistor having an amorphous semiconductor film, the heat resistance of the mask is not a problem. On the other hand, the heat resistance of the mask is a problem in the field of LSIs that are forced to undergo high-temperature processes. Therefore, it is preferable to use a step of leaving a mask without removing it in a low-temperature process for forming an amorphous semiconductor film as in this embodiment mode. Of course, in a low-temperature process for forming a crystalline semiconductor film, for example, a process for forming a crystalline semiconductor film by heating an amorphous semiconductor film, the mask for patterning the semiconductor film is not removed as in this embodiment mode. It may be used as a gate insulating film.

(Embodiment 5)
In this embodiment, a top view of a pixel including the thin film transistor described in the above embodiment will be described.

The pixel shown in FIG. 5 includes an N-channel type switching TFT (switching TFT) 2
00.

First, the electrode 111 is formed by a sputtering method or an inkjet method. For example, it is formed on the entire surface by sputtering and patterned so as to have a desired shape. Electrode 1
When 11 is formed from a light-transmitting conductive film, a transmissive display device is formed. When 11 is formed from a non-light-transmitting conductive film, a reflective display device can be formed.

Next, the conductive film 102 serving as the source wiring and drain wiring of the switching TFT is formed by a sputtering method or an inkjet method so as to be in the same layer as the signal line 201. In order to make the source wiring and the drain wiring into desired shapes, patterning is performed using a mask 102 formed by an inkjet method or a photolithography method. As shown in the above embodiment mode, the mask can be formed using polyimide, polyvinyl alcohol, or the like. Then, the source wiring and the drain wiring are patterned using the mask.
At this time, a part of the source wiring and the drain wiring becomes the source electrode and the drain electrode of the switching TFT. At this time, the source wiring and the drain wiring are formed so as to be connected to the electrode 111. For example, the source electrode of the switching TFT may be formed so as to overlap with the electrode 111.

Further, as shown in the above embodiment mode, N is formed on the conductive film to be the source wiring and the drain wiring.
A semiconductor film having a mold may be formed. An N-type semiconductor film is patterned simultaneously with the source wiring and the drain wiring using the mask 102.

After that, the semiconductor film 106 is formed without removing the mask. In FIG. 5, for the sake of convenience, the mask 105 is illustrated as being narrower than the width of the source and drain wirings 102, but a mask is formed over the source and drain wirings. Further, as shown in the above embodiment mode, the semiconductor film is formed by a plasma CVD method or the like. A mask is formed over the semiconductor film by an ink-jet method or a photolithography method, and the semiconductor film is patterned using the mask. For example, polyimide, polyvinyl alcohol, or the like is discharged by an ink jet method. As shown in the above embodiment mode, the gate insulating film may be used without removing the mask for patterning the semiconductor film.

Next, a gate wiring of the switching TFT is formed. The gate wiring is formed in the same layer as the scanning line 202 by a sputtering method or an inkjet method. A part of the gate wiring becomes the gate electrode of the switching TFT. In the case of forming a gate wiring by an inkjet method, a gate electrode can be formed by self-alignment using a source electrode and a drain electrode having a high film thickness as alignment.

Since the switching TFT has an amorphous semiconductor film, it is preferable to increase the channel width (W) of the switching TFT.

In FIG. 5, the mask for patterning the source wiring and the drain wiring is provided without being removed, but the mask for patterning other films may be left without being removed.

Further, without removing the mask for patterning the semiconductor film, it may be used as a gate insulating film and other masks may be removed.

That is, it is characterized by a thin film transistor having a mask at least in part, and is not limited to the portion where the mask is left.

In such a top view, a cut surface A-A ′ corresponds to the cross-sectional view of the above embodiment.

An example of a cross-sectional view corresponding to B-B 'is shown in FIG.

As shown in FIG. 6A, a base film 101 is formed over a substrate 100 having an insulating surface. An electrode 111 is formed on the base film formed on the substrate 100 by a sputtering method or the like. Next, a conductive film 102 and an N-type semiconductor film 103 are sequentially formed, and are patterned using a mask 105 formed by an ink-jet method or a photolithography method. At this time, the source electrode or the drain electrode is formed so as to be connected to the electrode 111. That is, the source electrode or the drain electrode is formed so as to overlap with the electrode 111.

Subsequent steps are the same as those in the above embodiment, and a description thereof will be omitted.

As described above, a thin film transistor including a mask for patterning at least a source wiring and a drain wiring can be formed.

FIG. 6B is a cross-sectional view in which a source wiring and a drain wiring are formed by an inkjet method and then patterned using a mask as described in the above embodiment. In addition, FIG.
The source electrode or the drain electrode is formed so as to overlap with the electrode 111 in the same manner as in FIG. Other configurations are the same as those in the above embodiment, and thus description thereof is omitted.

FIG. 6C is a cross-sectional view in which a mask for patterning a semiconductor film is used for a gate insulating film as shown in the above embodiment mode. Similarly to FIG. 6A, the source electrode or the drain electrode is formed so as to overlap with the electrode 111. Other configurations are the same as those in the above embodiment, and thus description thereof is omitted.

(Embodiment 6)
In this embodiment, a display device (liquid crystal display device) including a liquid crystal module including the thin film transistor described in the above embodiment is described.

FIG. 7 shows a cross section of a liquid crystal display device including the thin film transistor 120 formed on the TFT substrate formed as described above and the electrode 111. Note that the electrode 111 can be formed by an inkjet method or a sputtering method. When a light-transmitting conductive film (for example, ITO or ITSO) is used for the electrode 111, a transmissive liquid crystal display device is obtained, and when a non-transmissive, that is, highly reflective conductive film (for example, aluminum l) is used, a reflective liquid crystal display is obtained. A device can be formed.

A protective film 112 is formed so as to cover the thin film transistor 120 and the electrode 111. The protective film may be formed by discharging polyimide, polyvinyl alcohol, or the like by, for example, an inkjet method or a photolithography method. Alternatively, a silicon oxide film or a silicon nitride film can be formed by a plasma CVD method, a sputtering method, or the like. By forming the protective film in this way, the thin film transistor can be protected from the outside. The TFT substrate in this state is referred to as a liquid crystal module TFT substrate.

Thereafter, an alignment film 121 is formed to cover the protective film 112.

A counter substrate 125 is prepared, and a color filter 124, a counter electrode 123, and an alignment film 121 are prepared.
Are formed in order. The color filter, the counter electrode, or the alignment film can be formed by an inkjet method. Although not shown, the black matrix can also be formed by an ink jet method.

Thereafter, the substrate 100 and the counter substrate 125 are bonded together using a sealant, and liquid crystal is injected between them to form a liquid crystal layer 126, whereby a liquid crystal module is completed. Note that the liquid crystal may be formed by dropping. An ink jet method may be used as means for dropping the liquid crystal.

Then, using an anisotropic conductive film, FPC (Flexible Print Circuit: Flexible Pri
nted Circuit) can be bonded to form an external terminal.

The thin film transistor of this embodiment can be formed very thin because an interlayer insulating film is not formed.

In this embodiment mode, an interlayer insulating film may be formed to improve flatness. Increasing the flatness is preferable because a voltage can be uniformly applied to the liquid crystal layer. In addition, the alignment film can be formed uniformly, which is preferable. For the interlayer insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane , And their stacked structures can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

Note that an interlayer insulating film may be formed by stacking wirings first by an inkjet method and then forming a highly viscous insulating film. Further, the insulating film and the wiring may be appropriately dropped by an ink jet method. That is, the insulating film material and the wiring material may be dropped in order. If surface flatness becomes a problem at this time, a planarization process such as CMP (Chemical Mechanical Polishing) or etch back may be performed. As described above, photolithography processes such as a photomask forming process for opening contact holes, an etching process using the mask, and a cleaning process for removing the mask can be reduced.

Further, when a protective film is formed by an ink jet method, a photolithographic process such as a photomask exposure process, an etching process using the mask, and a mask removing process can be omitted.

Thus, a liquid crystal display device can be formed.

(Embodiment 7)
In this embodiment, a top view of a pixel which is different from that in the above embodiment is described. A TFT has three terminals: a gate, a source, and a drain. The source terminal (source electrode) and the drain terminal (
With regard to the drain electrode), it cannot be clearly distinguished due to the structure of the transistor. Therefore, when describing the connection between the elements, one of the source electrode and the drain electrode is used as the first electrode,
The other is referred to as a second electrode.

FIG. 8 shows an equivalent circuit diagram of a pixel portion of a display device (light emitting device) having a light emitting module having a light emitting element. One pixel includes a switching TFT (switching TFT) 800, a driving TFT (driving TFT) 801, and a current control TFT (current control TFT) 802. These TFTs have an N-channel type. . One electrode and a gate electrode of the switching TFT 800 are connected to a signal line 803 and a scanning line 805, respectively. One electrode of the current control TFT 802 is connected to the first power supply line 804, and the gate electrode is connected to the other electrode of the switching TFT.

The capacitor 808 may be provided so as to hold the voltage between the gate and the source of the current control TFT. In this embodiment mode, for example, when the potential of the first power supply line is set to a low potential and the light emitting element is set to a high potential, the current control TFT has an N-channel type, so that the source electrode and the first power supply line are connected to each other. To do. Therefore, the capacitive element includes a gate electrode and a source electrode of the current control TFT,
That is, it can be provided between the first power supply line. Note that when the gate capacitance of the switching TFT, the driving TFT, or the current control TFT is large and the leakage current from each TFT is within an allowable range, the capacitor 808 is not necessarily provided.

One electrode of the driving TFT 801 is connected to the other electrode of the current control TFT, and the gate electrode is connected to the second power supply line 806. The second power supply line 806 has a fixed potential. Therefore, the gate potential of the driving TFT can be set to a fixed potential, and operation can be performed so that the gate-source voltage Vgs due to parasitic capacitance or wiring capacitance does not change.

A light emitting element 807 is connected to the other electrode of the driving TFT. In this embodiment, for example, when the potential of the first power supply line is set to a low potential and the light emitting element is set to a high potential, the driving TF
The cathode of the light emitting element is connected to the drain electrode of T. Therefore, it is preferable to stack the cathode, the electroluminescent layer, and the anode in this order. At this time, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) is preferably formed on the uppermost surface of the electroluminescent layer in order to reduce damage caused by the sputtering method when forming the second electrode. Therefore, molybdenum oxide (M
More preferably, an oxide such as oOx: x = 2 to 3) is formed on the uppermost surface of the electroluminescent layer. Thus, when the TFT has an amorphous semiconductor film and has an N-channel type, the TFT
It is preferable that the drain electrode and the cathode are connected and the EIL, ETL, EML, HTL, HIL, and anode are laminated in this order.

The operation of such a pixel circuit will be described below.

When the scanning line 805 is selected and the switching TFT is turned on, the capacitor 808
Charge begins to accumulate in The charge of the capacitor element 808 is accumulated until it becomes equal to the gate-source voltage of the current control TFT. When equal, the current control TFT is turned on,
The driving TFTs connected in series are turned on. At this time, since the gate potential of the driving TFT is a fixed potential, a constant gate-source voltage Vgs is applied to the light emitting element regardless of the parasitic capacitance or the wiring capacitance, that is, the constant gate-source voltage Vgs. Minute current can be supplied.

Thus, since the light-emitting element is a current-driven element, variation in TFT characteristics within the pixel,
In particular, when there is little Vth variation, it is preferable to use analog driving. As in this embodiment mode, a TFT having an amorphous semiconductor film has low characteristic variation, and thus analog driving can be used. On the other hand, even in digital driving, the driving TFT is set in a saturation region (| Vgs−Vt
By operating in a region satisfying h | <| Vds |), a constant current value can be supplied to the light emitting element.

FIG. 8B illustrates an example of a top view of a light-emitting device having the above equivalent circuit.

First, the electrode 810 of the light emitting element 807 is formed. The electrode can be formed by an inkjet method or a sputtering method.

Thereafter, the source wiring, the drain wiring, the signal line, and the first power supply line are formed by patterning the same conductive film. The source electrode, the drain electrode, the signal line, and the first power supply line can be formed by an inkjet method, a sputtering method, or the like. A mask for patterning the conductive film is formed. The mask can be formed by an inkjet method or a photolithography method. In FIG. 8B, for convenience, the mask 105 is illustrated as being narrower than the width of the source and drain wirings 102, but a mask is formed over the source and drain wirings.

Then, a semiconductor film of each TFT is formed. In this embodiment mode, a semiconductor film is formed over the entire surface by a plasma CVD method, and a semiconductor film of each TFT is formed using a mask. Although not shown, a gate insulating film is formed thereafter.

Thereafter, a gate electrode, a scanning line, and a second power supply line of each TFT are formed from the same conductive film by an inkjet method or a sputtering method.

In this embodiment mode, the capacitor 808 is formed of a gate wiring and a source / drain wiring provided with a gate insulating film interposed therebetween.

In this embodiment mode, since the driving TFT includes an amorphous semiconductor film, the driving TFT is designed to have a wide channel width (W).

In this manner, a pixel portion of the light emitting device can be formed.

In this embodiment mode, an active matrix light-emitting device in which each pixel is provided with each TFT has been described; however, a passive matrix light-emitting device in which a TFT is provided for each column can also be formed. A passive matrix light-emitting device has a high aperture ratio because a TFT is not provided for each pixel. Therefore, in the case of a light-emitting device in which light is emitted to both sides of an electroluminescent layer, a passive matrix display device is preferably used. Further, when the pixel density is increased, an active matrix light-emitting device is considered to be advantageous because it can be driven at a low voltage because a TFT is provided in each pixel.

FIG. 9 shows a cross-sectional view of a light emitting device corresponding to C-C ′ in FIG. 8.

A thin film transistor 120 and an electrode 111 formed as described in the above embodiment mode are formed. At this time, the protective film 112 may be formed to cover the gate electrode. The protective film may be formed by discharging polyimide, polyvinyl alcohol, or the like by, for example, an inkjet method or a photolithography method. Alternatively, a silicon oxide film or a silicon nitride film can be formed by a plasma CVD method, a sputtering method, or the like. By forming the protective film in this way, the thin film transistor can be protected from the outside.

In this embodiment mode, an interlayer insulating film may be formed to improve flatness. Increasing the flatness is preferable because a voltage can be uniformly applied to the liquid crystal layer. In addition, the alignment film can be formed uniformly, which is preferable. For the interlayer insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane , And their stacked structures can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

Note that an interlayer insulating film may be formed by stacking wirings first by an inkjet method and then forming a highly viscous insulating film. Further, the insulating film and the wiring may be appropriately dropped by an ink jet method. That is, the insulating film material and the wiring material may be dropped in order. If surface flatness becomes a problem at this time, a planarization process such as CMP (Chemical Mechanical Polishing) or etch back may be performed. As described above, photolithography processes such as a photomask forming process for opening contact holes, an etching process using the mask, and a cleaning process for removing the mask can be reduced.

After that, an insulating film 113 that functions as a bank or a partition is formed. Insulating films include inorganic materials (
Silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane, and their stacked structures Can do. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used. For example, in the case where positive photosensitive acrylic is used as the organic material, an opening having a curvature can be formed at the upper end when the photosensitive organic resin is etched by an exposure process. Therefore, disconnection of an electroluminescent layer or the like to be formed later can be prevented.
The TFT substrate in this state is referred to as a light emitting module TFT substrate.

An electroluminescent layer 114 is formed in the opening of the insulating film 113 provided over the electrode 111. The electrode 11 functions as a first electrode of the light emitting element. Thereafter, the electroluminescent layer 114 and the insulating film 1
A second electrode 304 of the light emitting element is formed so as to cover 13.

As the type of molecular exciton formed by the electroluminescent layer, a singlet excited state and a triplet excited state are possible, and since the ground state is usually a singlet state, emission from the singlet excited state is fluorescence,
Light emission from the triplet excited state is called phosphorescence. The light emission from the electroluminescent layer includes the case where either excited state contributes. Further, a combination of fluorescence and phosphorescence may be used.
It can be selected according to the emission characteristics (emission brightness, lifetime, etc.) of GB.

The electroluminescent layer 114 includes an HIL (hole injection layer) and an HTL (hole injection layer) in order from the first electrode 111 side.
A hole transport layer), an EML (light emitting layer), an ETL (electron transport layer), and an EIL (electron injection layer) are laminated in this order. Note that the electroluminescent layer can have a single-layer structure or a mixed structure in addition to the stacked structure.

Further, in the case of full-color display as the electroluminescent layer 114, red (R), green (G),
A material that emits blue (B) light is selectively formed by an evaporation method using an evaporation mask, an inkjet method, or the like. The ink-jet method is preferable because RGB can be separately applied without using a mask. Of course, a monochromatic electroluminescent layer may be formed by an inkjet method.

Specifically, CuPc or PEDOT is used as HIL, α-NPD is used as HTL, BCP or Alq _{3 is used} as ETL, and BCP: Li or CaF ₂ is used as EIL. Further, for example, EML is a dopant corresponding to each emission color of R, G, and B (in the case of R, such as DCM, G
In this case, Alq ₃ doped with DMQD or the like may be used. Note that the electroluminescent layer is not limited to the material having the above stacked structure. For example, instead of CuPc or PEDOT, molybdenum oxide (
It can be formed by co-evaporating an oxide such as MoOx: x = 2 to 3) and α-NPD or rubrene, thereby improving the hole injection property. As such a material, an organic material (including a low molecule or a polymer) or a composite material of an organic material and an inorganic material can be used.

Furthermore, when each RGB electroluminescent layer is formed, high-definition display can be performed using a color filter.

In the case of forming an electroluminescent layer that emits white light, full color display can be performed by separately providing a color filter or a color filter and a color conversion layer. The color filter and the color conversion layer may be formed on, for example, a second substrate (sealing substrate) and attached to the substrate. The color filter and the color conversion layer can be formed by an ink jet method. Of course, full color display may be performed by forming an electroluminescent layer that emits light other than white to form a monochromatic light emitting device, or by additionally providing a color filter or a color filter and a color conversion layer. Further, an area color type display device capable of monochromatic display may be formed. As the area color type, a passive matrix type display unit is suitable, and characters and symbols can be mainly displayed.

In addition, it is necessary to select materials for the first electrode 111 and the second electrode 115 in consideration of a work function. However, each of the first electrode and the second electrode can be an anode or a cathode depending on the pixel configuration. In this embodiment mode, since the polarity of the driving TFT is an N-channel type, it is preferable that the first electrode be a cathode and the second electrode be an anode. In the case where the polarity of the driving TFT is a p-channel type, the first electrode may be an anode and the second electrode may be a cathode.

Below, the electrode material used for an anode and a cathode is demonstrated.

As an electrode material used as the anode, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a high work function (work function 4.0 eV). Specific examples include ITO (indium tin oxide), indium oxide with 2 to 20% zinc oxide (ZnO).
) Mixed with IZO (indium zinc oxide), indium oxide and 2-20% silicon oxide (S
ITSO mixed with iO ₂ ), gold, platinum, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or a nitride of a metal material (eg, titanium nitride) can be used.

On the other hand, the electrode material used as the cathode has a small work function (work function of 3.8 eV or less).
It is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like. Specific examples of the material include elements belonging to Group 1 or Group 2 of the element periodic rule, that is, alkali metals such as lithium and cesium, alkaline earth metals such as magnesium, calcium, and strontium, and alloys containing these (Mg: Ag, Al: Li) and compounds (LiF, CsF, C
In addition to aF ₂ ), a transition metal containing a rare earth metal can be used. However, since the second electrode has a light-transmitting property in this embodiment mode, these metals or alloys containing these metals are formed very thinly, and ITO, IZO, ITSO, or other metals (including alloys) and It can be formed by laminating.

The first electrode and the second electrode can be formed by an evaporation method, a sputtering method, an inkjet method, or the like.

In particular, when a conductive film by sputtering, ITO or ITSO, or a laminate thereof is formed as the second electrode, the electroluminescent layer may be damaged when formed by sputtering. In order to reduce damage caused by sputtering, molybdenum oxide (M
An oxide such as oOx: x = 2 to 3) is preferably formed on the uppermost surface of the electroluminescent layer. Therefore, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) functioning as HIL or the like is formed on the uppermost surface of the electroluminescent layer, and sequentially from the first electrode side, EIL (electron injection layer), ETL ( Electron transport layer), EML (light emitting layer), HTL (hole transport layer), HIL (hole injection layer), second
The electrodes may be stacked in this order. At this time, the first electrode functions as a cathode, and the second electrode functions as an anode.

In particular, in this embodiment, since the polarity of the driving TFT is an N-channel type, the first electrode is a cathode, an EIL (electron injection layer), an ETL (electron transport layer), an EM in consideration of the direction of electron movement.
L (light emitting layer), HTL (hole transport layer), HIL (hole injection layer), and the second electrode are preferably used as the anode.

After that, a passivation film containing nitrogen, DLC, or the like may be formed by a sputtering method or a CVD method. As a result, moisture and oxygen can be prevented from entering. In addition, the first electrode, the second electrode, and other electrodes can cover the side surface of the display means to prevent oxygen and moisture from entering. Next, the sealing substrate is attached. In the space formed by the sealing substrate,
Nitrogen may be enclosed or a desiccant may be disposed. Further, a resin having translucency and high water absorption may be filled.

In order to increase the contrast, a polarizing plate or a circular polarizing plate may be provided. For example, a polarizing plate or a circularly polarizing plate can be provided on one surface or both surfaces of the display surface.

In the light emitting module having the structure formed as described above, when the first electrode and the second electrode are formed so as to have translucency, the light emitting module can emit light from the electroluminescent layer with luminance corresponding to the video signal input from the signal line. Light is emitted in the directions of double arrows 130 and 131. In addition, when the first electrode is formed so as to transmit light and the second electrode is formed so as not to transmit light, the light is emitted only in the arrow direction 131. In addition, when the first electrode is formed so as not to transmit light and the second electrode is formed so as to transmit light, the light is emitted only in the arrow direction 130. At this time, light can be effectively used by using a highly reflective conductive film for a non-light-transmitting electrode provided on the side not corresponding to the light emission direction.

In this embodiment, in order to obtain a light-transmitting conductive film, a light-transmitting conductive film is thinly formed to have a light-transmitting property, and the light-transmitting conductive film is formed thereover. May be laminated.

In this manner, a light emitting device can be formed.

(Embodiment 8)
In this embodiment, an example of a method for manufacturing a thin film transistor, which is different from that in the above embodiment, will be described. In this embodiment, the difference from the above embodiment is that the gate electrode is formed first,
The gate electrode is provided below the semiconductor film. Therefore, other manufacturing steps are the same as those in the above embodiment, and a detailed description thereof is omitted.

First, as illustrated in FIG. 10A, a conductive film to be the gate electrode 108 is formed over the substrate 100 having an insulating surface. The conductive film can be formed by an inkjet method or a sputtering method. Thereafter, a mask 109 is formed and the conductive film is patterned. Mask 1
09 can be formed by an inkjet method or a photolithography method. For example, polyimide or polyvinyl alcohol is discharged by an ink jet method. Note that in this embodiment, since at least a gate electrode and a gate insulating film are provided between the semiconductor film and the substrate, formation of a base film can be omitted.

As shown in FIG. 10B, an insulating film functioning as the gate insulating film 107 is formed without removing the mask 109. At this time, the mask 109 can be used as part of the gate insulating film. Then, a semiconductor film 106 is formed over the gate insulating film and patterned using the mask 112. The mask 112 can be formed by an inkjet method or a photolithography method. For example, polyimide or polyvinyl alcohol is discharged by an ink jet method.

After removing the mask 112, as shown in FIG. 10C, an N-type semiconductor film 103 is formed as needed. The semiconductor film having N type can be formed by a plasma CVD method. A conductive film to be the source and drain electrodes 102 is formed over the N-type semiconductor film. The conductive film can be formed by an inkjet method or a sputtering method.
After that, the conductive film to be the source and drain electrodes 102 and the N-type semiconductor film 103 are patterned using a mask.

As described above, the thin film transistor provided with the source electrode and the drain electrode is completed. The thin film transistor of this embodiment is a so-called bottom-gate thin film transistor in which a gate electrode is provided below a semiconductor film.

Further, the thin film transistor thus formed has a mask used for patterning the conductive film. In this embodiment mode, the thin film transistor includes a mask provided when patterning a gate electrode and a semiconductor film provided over the conductive film through the mask. Of course, the thin film transistor of the present invention may have a mask used in other patterning steps.

As described above, a thin film transistor can be formed by a simple method that does not require a mask material peeling step, that is, a cleaning step.

Further, when the mask material is formed by the ink jet method, a photolithography process such as exposure and development of the mask material can be omitted. Compared with a spin coating method or the like, the inkjet method can effectively use a mask material, so that the material cost can be reduced.

FIG. 16 is a perspective view of the thin film transistor shown in FIG. 10 and shows the semiconductor film 106 and the source and drain electrodes 102. In FIG. 16, since the semiconductor film has a mountain shape covering the gate electrode, carriers can also flow on the side surface of the semiconductor film. That is, the channel width (W) through which carriers flow can include the side surface of the semiconductor film and can be formed large. Such a thin film transistor having a large channel width is formed by using the driving T described above.
It is preferable to use for FT.

In the case of a low-temperature process for forming a thin film transistor having an amorphous semiconductor film, the heat resistance of the mask is not a problem. On the other hand, the heat resistance of the mask is a problem in the field of LSIs that are forced to undergo high-temperature processes. Therefore, it is preferable to use a step of leaving a mask without removing it in a low-temperature process for forming an amorphous semiconductor film as in this embodiment mode.

(Embodiment 9)
In this embodiment, a liquid crystal display device including the thin film transistor described in Embodiment 8 will be described.

As shown in FIG. 11, the thin film transistor 120 described in Embodiment Mode 8 is formed. An electrode 111 is formed so as to be connected to the source electrode or the drain electrode of the thin film transistor 120. The electrode 111 can be formed by an inkjet method or a sputtering method.
Further, a protective film may be formed so as to cover the thin film transistor 120 and the electrode 111.

In this embodiment mode, an interlayer insulating film may be formed to improve flatness. Increasing the flatness is preferable because a voltage can be uniformly applied to the liquid crystal layer. In addition, the alignment film can be formed uniformly, which is preferable. For the interlayer insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane , And their stacked structures can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

Note that an interlayer insulating film may be formed by stacking wirings first by an inkjet method and then forming a highly viscous insulating film. Further, the insulating film and the wiring may be appropriately dropped by an ink jet method. That is, the insulating film material and the wiring material may be dropped in order. If surface flatness becomes a problem at this time, a planarization process such as CMP (Chemical Mechanical Polishing) or etch back may be performed. As described above, photolithography processes such as a photomask forming process for opening contact holes, an etching process using the mask, and a cleaning process for removing the mask can be reduced.

Thereafter, an alignment film 121 is formed to cover the thin film transistor 120 and the electrode 111.

A counter substrate 125 is prepared, and a color filter 124, a counter electrode 123, and an alignment film 121 are prepared.
Are formed in order. The color filter, the counter electrode, or the alignment film can be formed by an inkjet method. Although not shown, the black matrix can also be formed by an ink jet method.

After that, the substrate 100 and the counter substrate 125 are bonded to each other with a sealant, and liquid crystal is injected therebetween to form the liquid crystal layer 126. Note that the liquid crystal may be formed by dropping. An ink jet method may be used as means for dropping the liquid crystal.

Then, using an anisotropic conductive film, FPC (Flexible Print Circuit: Flexible Pri
nted Circuit) can be bonded to form an external terminal.

(Embodiment 10)
In this embodiment, a light-emitting device including the thin film transistor described in Embodiment 8 will be described. Note that in this embodiment mode, the structure of the light-emitting device described in Embodiment Mode 7 and a thin film transistor are different. Therefore, detailed description of other configurations is omitted.

As shown in FIG. 12, the thin film transistor 120 described in Embodiment Mode 8 is formed. An electrode 111 is formed so as to be connected to the source electrode or the drain electrode of the thin film transistor 120. The electrode 111 can be formed by an inkjet method or a sputtering method.
Further, a protective film may be formed so as to cover the thin film transistor 120 and the electrode 111.

In this embodiment mode, an interlayer insulating film may be formed to improve flatness. Increasing the flatness is preferable because a voltage can be uniformly applied to the liquid crystal layer. In addition, the alignment film can be formed uniformly, which is preferable. For the interlayer insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane , And their stacked structures can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

Note that an interlayer insulating film may be formed by stacking wirings first by an inkjet method and then forming a highly viscous insulating film. Further, the insulating film and the wiring may be appropriately dropped by an ink jet method. That is, the insulating film material and the wiring material may be dropped in order. If surface flatness becomes a problem at this time, a planarization process such as CMP (Chemical Mechanical Polishing) or etch back may be performed. As described above, photolithography processes such as a photomask forming process for opening contact holes, an etching process using the mask, and a cleaning process for removing the mask can be reduced.

After that, an insulating film 113 that functions as a bank or a partition is formed.

An electroluminescent layer 114 is formed in the opening of the insulating film 113 provided over the electrode 111. The electrode 11 functions as a first electrode of the light emitting element. Thereafter, the electroluminescent layer 114 and the insulating film 1
A second electrode 304 of the light emitting element is formed so as to cover 13.

After that, a passivation film containing nitrogen, DLC, or the like may be formed by a sputtering method or a CVD method. Next, the sealing substrate is attached. In the space formed by the sealing substrate, nitrogen may be sealed or a desiccant may be disposed. Further, a resin having translucency and high water absorption may be filled.

In order to increase the contrast, a polarizing plate or a circular polarizing plate may be provided. For example, a polarizing plate or a circularly polarizing plate can be provided on one surface or both surfaces of the display surface.

In the light emitting device having the structure formed as described above, when the first electrode and the second electrode are formed so as to have translucency, the light emitting device can emit light from the electroluminescent layer with luminance corresponding to the video signal input from the signal line. Light is emitted in the directions of double arrows 130 and 131. The first electrode has translucency and the second electrode
When the electrode is formed so as to have non-translucency, the light is emitted only in the arrow direction 131. 1st
When the second electrode is formed so as to be non-translucent and the second electrode is formed to be translucent, the direction of the arrow 13
Eject only to zero. At this time, light can be effectively used by using a highly reflective conductive film for a non-light-transmitting electrode provided on the side not corresponding to the light emission direction.

In this embodiment, in order to obtain a light-transmitting conductive film, a light-transmitting conductive film is thinly formed to have a light-transmitting property, and the light-transmitting conductive film is formed thereover. May be laminated.

(Embodiment 11)
In this embodiment mode, modules such as the light-emitting device and the liquid crystal display device described in the above embodiment modes will be described.

FIG. 13 shows an external view of a module on which the control circuit 901 and the power supply circuit 902 are mounted. A pixel portion 903 in which a light-emitting element or a liquid crystal element is provided for each pixel over a substrate 900.
Is provided. A thin film transistor included in the pixel portion 903 can be formed so as to leave a mask as in the above embodiment mode. A scanning line driver circuit 904 that selects a pixel included in the pixel portion 903 and a signal line driver circuit 905 that supplies a video signal to the selected pixel are I
It is mounted with a C chip. Further, the length and the number of the long side and the short side of the IC to be mounted are not limited to the present embodiment.

The printed circuit board 907 is provided with a control circuit 901 and a power supply circuit 902. Various signals and power supply voltages output from the control circuit 901 or the power supply circuit 902 are supplied to the scanning line driving circuit 904 and the signal line driving via the FPC 906. The voltage is supplied to the circuit 905 and further supplied to the pixel portion 903.

The power supply voltage and various signals of the printed circuit board 907 are supplied via an interface (I / F) unit 908 in which a plurality of input terminals are arranged.

In this embodiment mode, the printed circuit board 907 is mounted using the FPC 906.
The configuration is not necessarily limited to this. The control circuit 901 and the power supply circuit 902 may be directly mounted on the substrate using a COG (Chip on Glass) method. The mounting method of the IC chip such as the signal line driver circuit and the scanning line driver circuit is not limited to this embodiment mode, and the IC chip formed on the substrate is connected to the wiring of the pixel portion by a wire bonding method. Also good.

Further, in the printed circuit board 907, noise may occur in a power supply voltage or a signal, or a signal may be slow to rise due to a capacitance formed between the drawn wirings, a resistance of the wiring itself, or the like. Therefore, various elements such as a capacitor and a buffer may be provided on the printed circuit board 907 so that noise is added to the power supply voltage and the signal and the rise of the signal is slow.

As described above, a module having a thin film transistor can be formed by a simple method that does not require a mask material peeling step for patterning a semiconductor film and a conductive film, that is, a cleaning step.

(Embodiment 12)
In this embodiment mode, sealing states of the light-emitting device and the liquid crystal display device described in the above embodiment modes will be described.

FIG. 14A is a cross-sectional view of a sealed light-emitting device. In the pixel portion 903, a driving TFT 914 having an N-channel type is provided over a substrate (referred to as a first substrate for convenience) 911 with a base film 912 interposed therebetween. The driving TFT is formed by the method described in the above embodiment mode. The anode 9 is connected to the wiring functioning as the source electrode or drain electrode of the driving TFT.
15 is connected. An electroluminescent layer 916 and a cathode 917 are formed in this order on the anode.

Further, a protective film 918 is provided to cover the cathode. The protective film is formed to have an insulating film mainly composed of silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method), or a DLC film (Diamond Like Carbon) containing hydrogen. The protective film can have a single-layer structure or a stacked structure of the above films. The protective film can prevent deterioration of the electroluminescent layer due to moisture, oxygen, or the like.

The cathode and the protective film are provided up to the first connection region 920. In the connection region 920, the cathode is connected to the connection wiring 919.

In the sealing region 923, a first substrate 911 and a counter substrate (referred to as a second substrate for convenience) 922 are attached to each other with a sealant 921 interposed therebetween. The sealing material is made of a thermosetting resin or an ultraviolet curable resin, and is heated while applying pressure or irradiated with ultraviolet rays to bond and fix the first substrate and the second substrate. For example, an epoxy resin can be used as the sealing material. A spacer is mixed in the sealing material, and the interval between the first substrate and the second substrate,
A so-called gap is maintained. A spacer having a spherical or columnar shape is used as the spacer, and in this embodiment, a cylindrical spacer is used, and the diameter of the circle becomes a gap.

In the second connection region 926, the connection wiring 919 is connected to the signal line driver circuit formed by the IC chip 927 through the anisotropic conductive film 924. The IC chip is FPC925.
It is provided above. When adhering the anisotropic conductive film by pressurization or heating, care should be taken not to cause cracks due to the flexibility of the film substrate and softening due to heating. For example, a highly rigid substrate may be disposed as an auxiliary in the adhesion region. A video signal and a clock signal are received from the IC chip thus connected.

When sealed with the second substrate 922, a space is formed between the protective film 918. The space is filled with an inert gas, for example, nitrogen gas, or a material with high water absorption is formed to prevent moisture and oxygen from entering. Further, a resin having translucency and high water absorption may be formed. Even when light from the light-emitting element is emitted to the second substrate side with the light-transmitting resin, the resin can be formed without reducing transmittance.

FIG. 14B shows a case of sealing without using the second substrate, unlike FIG. 14A. Since other configurations are the same, description thereof is omitted.

In FIG. 14B, a second protective film 930 is provided so as to cover the protective film 918. Second
As the protective film, an organic material such as an epoxy resin, a urethane resin, or a silicone resin can be used. In this embodiment mode, the epoxy resin is discharged using a dispenser and dried.

In the case where deterioration of the electroluminescent layer due to moisture, oxygen, or the like is not a problem, the protective film 918 is not necessarily provided. Further, a second substrate may be provided over the second protective film and sealed.

When sealing is performed without using the second substrate in this manner, the weight, size, and thickness of the display device can be improved.

(Embodiment 13)
In this embodiment mode, an ejection unit included in a droplet ejection apparatus (inkjet apparatus) for forming a mask or wiring will be described. The ejection means for ejecting the composition includes a head having one or more solution injection ports and one or more nozzles. A composition that is a raw material for the conductive film is injected from the solution injection port, and the composition is discharged from the nozzle.

The diameter of the nozzle is set to 0.02 μm to 100 μm (preferably 30 μm or less), and the discharge amount of the composition discharged from the nozzle is set to 0.001 pl to 100 pl (preferably 10 pl or less). This discharge amount can be controlled by the size of the nozzle diameter. Therefore, the nozzle diameter can be determined based on a desired mask size and wiring width.

In addition, the distance between the surface of the object to be processed and the discharge port of the nozzle is preferably close in order to discharge to a desired location. Preferably, it is 0.1 mm to 3 mm (preferably 0.5 mm to 2 mm).

As the composition discharged from the discharge port, a solvent in which a mask material or a conductor is mixed is used.

As mask material, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.)
A photosensitive or non-photosensitive organic material (polyimide, polyvinyl alcohol, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene) can be used.

As a conductor, gold, silver, copper, platinum, palladium, tungsten, nickel, tantalum, bismuth, lead, indium, tin, zinc, titanium, or aluminum, alloys made of these, dispersible nanoparticles thereof, or halogenated Silver fine particles can be used. In particular, low resistance silver or copper may be used. However, in the case of using copper, an insulating film containing nitrogen is formed as a barrier film in order to prevent copper from diffusing into the semiconductor film or the like. As a transparent conductor,
Indium tin oxide (ITO), IZO (indium zinc oxide) in which 2-20% zinc oxide (ZnO) is mixed in indium oxide, 2-20% in indium oxide
ITSO mixed with silicon oxide (SiO ₂ ), organic indium, organic tin, titanium nitride (
TiN) or the like can also be used.

The diameter of the particles used for the mask material and the conductor can be determined by the diameter of each nozzle, the desired pattern width, and the like. For prevention of nozzle clogging and production of a high-definition pattern, a smaller one is preferable, and a particle diameter of 0.1 μm or less is preferable.

As the solvent, an aqueous solvent or an oil (alcohol) solvent can be used. When an aqueous solvent is used, a surfactant is preferably added so that the composition is smoothly discharged from the nozzle.

As the oil (alcohol) -based solvent, a nonpolar solvent or a low polarity solvent can be used. For example, terpineol, mineral spirit, xylene, toluene, ethylbenzene, mesitylene, hexane, heptane, octane, decane, dodecane, cyclohexane, or cyclooctane can be used.

The step of discharging the composition is preferably performed under reduced pressure. The solvent of the composition evaporates between the time when the composition is discharged and the material is landed on the object to be processed, so that the steps of drying and baking the composition can be omitted. Further, it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor.

In addition, when using the inkjet method, in order to dry and bake a composition, heat processing is performed as needed. For example, drying is at 100 degrees for 3 minutes, baking is at 200 to 350 degrees for 15 minutes to 3
Perform in 0 minutes. The drying and baking processes are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like.

In order to efficiently perform the drying and baking steps, the substrate may be heated. At that time, the temperature of the substrate depends on the material of the substrate or the like, but is generally 100 to 800 degrees (preferably 200 degrees).
~ 350 degrees). By this step, the solvent or solution in the composition can be evaporated, or the dispersant can be chemically removed and cured and shrunk, thereby accelerating the fusion between the nanoparticles.

Masks and wirings can be formed by an inkjet method using a droplet discharge apparatus having such discharge means. That is, the ink jet method of this embodiment can be used as the ink jet method of the above embodiment.

(Embodiment 14)
As an electronic device using the display device described in the above embodiment, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, an audio playback device (car audio, audio component, etc.), a notebook type personal computer , Game machines, portable information terminals (mobile computers, mobile phones, portable game machines, electronic books, etc.), and image playback devices (specifically Digital Versatile Disc (
DVD) and the like, and a device provided with a display capable of displaying the image. In particular, it is desirable to use the ink jet method described in the above embodiment mode for a large television having a large screen. Specific examples of these electronic devices are shown in FIGS.

FIG. 15A illustrates a large display device, which includes a housing 2001, a support base 2002, and a display portion 2003.
, A speaker portion 2004, a video input terminal 2005, and the like. The display portion 2003 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light-emitting element or a liquid crystal element and includes a TFT formed by the ink jet method described in the above embodiment mode. The display devices include all information display devices for personal computers, for receiving TV broadcasts, for displaying advertisements, and the like.

FIG. 15B illustrates a mobile phone among mobile terminals, which includes a main body 2101, a housing 2102, a display portion 2103, a sound input portion 2104, a sound output portion 2105, operation keys 2106, and an antenna 2.
107 etc. are included. The display portion 2103 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light-emitting element or a liquid crystal element and includes a TFT formed by the ink jet method described in the above embodiment mode. Furthermore, the cost of the cellular phone can be reduced by forming the display portion 2103 by multi-cavity.

FIG. 15C shows a sheet-type mobile phone, which includes a main body 2301, a display portion 2303, an audio input portion 2304, an audio output portion 2305, a switch 2306, an external connection port 2307, and the like. A separately prepared earphone 2308 can be connected through the external connection port 2307. A touch panel display screen including a sensor is used for the display portion 2303, and a series of operations can be performed by touching a touch panel operation key 2309 displayed on the display portion 2303. The display portion 2303 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light-emitting element or a liquid crystal element and includes a TFT formed by the ink jet method described in the above embodiment mode. Further, by forming the display portion 2303 by multi-cavity, the cost of the sheet type mobile phone can be reduced.

As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, any of the structures described in the above embodiments can be used for the electronic device of this example.

4A and 4B illustrate a method for manufacturing a thin film transistor of the present invention. 4A and 4B illustrate a method for manufacturing a thin film transistor of the present invention. 4A and 4B illustrate a method for manufacturing a thin film transistor of the present invention. 4A and 4B illustrate a method for manufacturing a thin film transistor of the present invention. FIG. 6 is a top view illustrating a pixel including a thin film transistor of the present invention. 4A and 4B illustrate a method for manufacturing a thin film transistor of the present invention. FIG. 5 shows a liquid crystal display device having a thin film transistor of the present invention. 4A and 4B are an equivalent circuit and a top view of a pixel having a thin film transistor of the present invention. FIG. 6 shows a light-emitting device having a thin film transistor of the present invention. 4A and 4B illustrate a method for manufacturing a thin film transistor of the present invention. FIG. 5 shows a liquid crystal display device having a thin film transistor of the present invention. FIG. 6 shows a light-emitting device having a thin film transistor of the present invention. The figure which showed the module which has the thin-film transistor of this invention. FIG. 6 shows a light-emitting device having a thin film transistor of the present invention. FIG. 11 illustrates an electronic device having the thin film transistor of the present invention. The figure which showed the thin-film transistor of this invention.

Claims (9)

A mask in contact with the semiconductor film and formed by an inkjet method;
A thin film transistor having a gate electrode provided in contact with the mask,
Since the mask is formed by an inkjet method, it has a shape that is ejected in the form of a dot or a column of dots.
The semiconductor film is patterned using the mask, so that the upper end portion of the semiconductor film and the lower end portion of the mask coincide with each other. In claim 1,
The thin film transistor, wherein the mask functions as a gate insulating film. In claim 1 or claim 2,
The mask has a skeletal structure composed of a bond of silicon and oxygen, has at least hydrogen as a substituent, and a polymer material having at least one of fluorine, an alkyl group, or aromatic hydrocarbon as a substituent, or silicon A thin film transistor including a polymer material having a nitrogen bond. A first mask formed by an inkjet method on the source electrode and the drain electrode;
A semiconductor film provided on the first mask;
A second mask in contact with the semiconductor film and formed by an inkjet method;
A thin film transistor having a gate electrode provided in contact with the second mask,
Since the first and second masks are formed by the ink jet method, the first and second masks have a shape that is ejected in a dot shape or a column shape in which dots are connected,
Since the source electrode and the drain electrode are patterned using the first mask,
The upper end portions of the source and drain electrodes and the lower end portion of the first mask coincide with each other,
The semiconductor film is patterned using the second mask, so that an upper end portion of the semiconductor film and a lower end portion of the second mask coincide with each other. In claim 4,
The thin film transistor, wherein the second mask functions as a gate insulating film. In claim 4 or claim 5,
The thin film transistor, wherein the first mask includes any one of polyimide and polyvinyl alcohol. In any one of Claims 4 thru | or 6,
The second mask has a skeletal structure composed of a bond of silicon and oxygen, and has at least hydrogen as a substituent, and a polymer material having at least one of fluorine, an alkyl group, or aromatic hydrocarbon as a substituent, A thin film transistor including a polymer material having a bond of silicon and nitrogen. The light emitting device characterized by having a thin film transistor according to any one of claims 1 to 7. The liquid crystal display device characterized by having a thin film transistor according to any one of claims 1 to 7.

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