JP4767424B2 - A method for producing amorphous silica powder. - Google Patents
A method for producing amorphous silica powder. Download PDFInfo
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- JP4767424B2 JP4767424B2 JP2001014532A JP2001014532A JP4767424B2 JP 4767424 B2 JP4767424 B2 JP 4767424B2 JP 2001014532 A JP2001014532 A JP 2001014532A JP 2001014532 A JP2001014532 A JP 2001014532A JP 4767424 B2 JP4767424 B2 JP 4767424B2
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- filler
- amorphous silica
- silica powder
- liquid
- epoxy resin
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 239000000843 powder Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000945 filler Substances 0.000 claims abstract description 32
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 claims abstract description 14
- 125000005372 silanol group Chemical group 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 239000007788 liquid Substances 0.000 abstract description 14
- 239000000565 sealant Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 12
- 239000003566 sealing material Substances 0.000 description 9
- 230000002776 aggregation Effects 0.000 description 6
- 239000008393 encapsulating agent Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000004220 aggregation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Glass Melting And Manufacturing (AREA)
- Silicon Compounds (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、液状エポキシ樹脂の充填材及び液状半導体封止材に関する。詳しくは、液状エポキシ樹脂に対する分散性の良好な充填材と、それを用いた充填性・流動性に優れた液状半導体封止材に関する。
【0002】
【従来の技術】
従来、半導体樹脂封止材の一つとして、液状エポキシ樹脂に非晶質シリカ粉末が充填された液状半導体封止材がある。このものは、近年主流となりつつあるベアチップ実装技術において、ベアチップと基板との狭い20〜100μm程度の間隙に充填されなければならないので、それに使用される充填材は、著しく微細なものでなければならない。
【0003】
しかしながら、充填材を微細化することの問題は、微細に比例して凝集が起こりやすくなることであり、上記間隙に封止材をうまく充填できなかったり、充填できても凝集粒子によってチップ等がキズ付けられる恐れがあったことである。これをなくするには、高価なシランカップリング剤の使用等、新たな対応が必要であった。
【0004】
【発明が解決しようとする課題】
本発明の目的は、シランカップリング剤を用いないで液状エポキシ樹脂に充填しても、凝集粒子がないか、あってもそれが著しく少なく、分散性・充填性に優れた液状半導体封止材を提供することである。
【0005】
【課題を解決するための手段】
すなわち、本発明は、シリカ原料を高温火炎(1800℃以上)中に供給して球状化処理を行い、ブロワーで捕集系に搬送しつつ捕集する際に、サイクロン又はバグフィルターの捕集装置の温度を550℃以上とすることを特徴とする比表面積0.5〜40m2/g、水素結合シラノール基濃度が8個/nm2以下の液状エポキシ樹脂の充填材用の非晶質シリカ粉末の製造方法である。
【0006】
【発明の実施の形態】
以下、更に詳しく本発明について説明する。
【0007】
本発明の充填材は、非晶質シリカ粉末からなるものである。これによって、それが液状エポキシ樹脂に充填された半導体封止材と、チップ、半田バンプとの熱膨張率の差を小さくすることができるので、熱膨張によるクラック等を回避することができる。
【0008】
本発明の充填材は、比表面積が0.5〜40m2/gであることが必要である。比表面積が40m2/gを超えると、液状半導体封止材が高粘度となりすぎて充填性が悪化し、また0.5m2/g未満であると、粗粒子がチップと基板との間隙に詰まり、未充填、ボイドなどが発生し、成形性が損なわれる恐れがある。
【0009】
さらに、本発明の充填材は、水素結合シラノール基濃度が8個/nm2以下であることが必要である。水素結合シラノール基濃度が8個/nm2を超えると、充填材が凝集しやすくなり、上記と同様な未充填等の問題が起こるとともに、凝集力も強いことから簡単には解れず、凝集粒子がチップや基板を傷つける恐れがある。この問題をシランカップリング剤の添加によって解消させようとしても、均一なシランカップリング処理が困難であることから、十分な効果は得られない。
【0010】
本発明において、比表面積はBET法、シラノール基濃度はカールフィッシャー法により測定される。それらの機器の一例は、それぞれ、湯浅アイオニクス社製比表面積測定器(モデル4−SORB)、三菱化学社製微量水分測定器(モデルCA−05)がある。なお、粒径頻度分布は、例えばコールター社製粒度測定器(モデルLS−230型)を用いて測定される。
【0011】
カールフィッシャー法によるシラノール基濃度は、水分気化装置に試料をセットし、電気ヒーターで加熱しながら脱水処理されたアルゴンガスをキャリアガスとして供給し、試料表面に付着したシラノール基が縮合して揮発した水蒸気を測定器に導き、その水分を測定することによって行われる。本発明においては、加熱温度250℃未満までに発生した水分は、物理的な吸着水とし、加熱温度250℃以上550℃未満で発生した水分は、水素結合シラノール基の脱水縮合によるものとし、加熱温度550℃から900℃までに発生した水分は、孤立シラノール基の脱水縮合によるものとし、それをもとに、単位表面積当たりの水素結合シラノール基濃度を算出した。
【0012】
本発明の充填材は、例えば金属シリコン微粉末を火炎中で酸化反応させる方法や、高温火炎中でシリカ質原料粉末を溶融する方法において、原料の熱処理条件を調整し、捕集温度を550℃以上にすることにより製造することができる。
【0013】
たとえば、LPG−酸素混合型バーナーが炉頂部に配置された竪型炉と、その炉底部に接続されたサイクロン、バグフィルター等の捕集装置からなる装置を用い、上記バーナーの中心部に取り付けられた二流体ノズルからシリカ原料を高温火炎(温度1800℃以上)中に供給して球状化処理を行い、それをブロワーで捕集系に搬送しつつ捕集する際に、サイクロン、バグフィルター等の捕集装置の温度を550℃以上に設定しておくことによって、製造することができる。耐熱濾布としてセラミックスフィルターを使用し、絶湿状態で室温付近まで冷却してから捕集することが好ましい。
【0014】
本発明の充填材は、単独又は他のフィラーと併用して液状エポキシ樹脂に充填される。充填量は、液状エポキシ樹脂100部(質量部、以下同じ)に対し、合計で100〜200部が一般的である。本発明の充填材と他のフィラーとを併用する場合、本発明の充填材100部に対し他のフィラーが200部以下であることが好ましい。他のフィラーだけでは分散性が悪い場合でも、本発明の充填材と併用することによって分散性が改善され、他のフィラーを高充填しても低粘度化が実現され、熱膨張率の小さい液状半導体封止材となる。
【0015】
本発明の充填材と併用される他のフィラーとしては、シリカ、アルミナ、マグネシア等をあげることができる。これらの中でも、低熱膨張率材料である非晶質シリカが好適である。
【0016】
本発明の充填材が充填される液状エポキシ樹脂としては、1分子中に2個以上のエポキシ基を有するものであれば特に限定されず、具体的にはビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、脂環式エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ナフタレンジオール型エポキシ樹脂等が挙げられる。
【0017】
【実施例】
以下、本発明を実施例、比較例をあげて更に具体的に説明する。
【0018】
実施例1〜3 比較例1〜3
表1に用いた非晶質シリカ粉末の物性値を示す。これらの非晶質シリカ粉末は、特願平11−228975号明細書の実施例に準じた方法で、比表面積と水素結合シラノール基個数の違うものを準備した。すなわち、天然珪石粉末原料の粒度調整を行い、1μm以下粒子含量が15%以下で平均粒子径5μmのシリカ質原料粉末を調製した。これらをキャリアガス(酸素25Nm3/Hr)にてバーナーに搬送させ、プロパンガス(18Nm3/Hr)と酸素(65Nm3/Hr)で形成した高温火炎中に噴射し、溶融球状化操作を行った。粉体濃度(粉末原料投入量(kg/Hr)/プロパンガス量(Nm3/Hr))は、どの実験例においても2.0とした。また、捕集室は溶融炉の直後に設置され、系内に取り込む外気の吸引量を外気調整弁にて調整し捕集室の温度を表1に示される値に調節した。捕集は、多孔質炭化珪素製セラミックスフィルター(気孔率76%)を用いて行い、高温で捕集された粉体はその後絶湿状態で冷却した。捕集された球状シリカについて、オフラインにて分級機(小野田エンジニアリング社製「クラッシールN−20型」)の回転数を調整して比表面積を調節した。水素結合シラノール基個数は捕集温度を変えることにより調節した。
【0019】
上記非晶質シリカ粉末100部を液状エポキシ樹脂(ビスフェノールA型エポキシ樹脂旭チバ社製「AER−250」)100部に充填して液状半導体封止材を調合し、以下に従う、充填性、粘度、非晶質シリカ粉末の凝集状態を測定した。それらの結果を表1に示す。
【0020】
(1)充填性
模擬半導体素子を半田バンプを介してセラミックス基板上にフェイスダウンで接続し、それをヒーターで60℃に加熱し、この状態で模擬半導体素子と基板との間隙に、注射器を用いて大気圧下で各液状半導体封止材液状半導体封止材を流し込み、45分後に充填度合いを評価した。判定は目視で行い、ボイド又は未充填部の認められないものを「○」、認められたものを「×」とした。
【0021】
(2)粘度
EHD型粘度計(東京計器社)にて、3°R14の回転ローターを使用し、60℃で回転数10rpmで測定した。比較例2については凝集が著しいために、樹脂に均一に分散できず、粘度測定が行えなかった。
【0022】
(3)凝集状態
粘度測定に使用した液状半導体封止材を硝子板に挟み、その凝集状態を目視にて観察し、3段階評価した。
○:目視で検出できる大きさの凝集粒子が認められない。
△:目視で検出できる大きさの凝集粒子が数個認められる。
×:目視で検出できる大きさの凝集粒子が十個以上認められる。
【0023】
実施例4
実施例1の非晶質シリカ粉末30部、他のフィラーである球状溶融シリカ粉末(平均粒径8μm)90部、液状エポキシ樹脂80部を混合して液状半導体封止材を調合し、実施例1と同様にして評価した。
【0024】
【表1】
【0025】
【表2】
【0026】
表1、表2から明らかなように、本発明の充填材が充填された液状半導体封止材(実施例1〜3)は、比較例1〜3に比べて、低粘度化が実現され、凝集粒子もないことがわかる。また、本発明の充填材と他のフィラーとを併用する(実施例4)ことによって、他のフィラー量を高充填しても低粘度を実現できた。
【0027】
【発明の効果】
本発明によれば、充填性・流動性に優れた液状半導体封止材を提供することができる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a liquid epoxy resin filler and a liquid semiconductor encapsulant. Specifically, the present invention relates to a filler having good dispersibility with respect to a liquid epoxy resin and a liquid semiconductor encapsulant using the same and having excellent filling properties and fluidity.
[0002]
[Prior art]
Conventionally, as one of semiconductor resin sealing materials, there is a liquid semiconductor sealing material in which a liquid epoxy resin is filled with amorphous silica powder. In this bare chip mounting technology, which is becoming the mainstream in recent years, it is necessary to fill a narrow gap of about 20 to 100 μm between the bare chip and the substrate, so that the filler used for it must be extremely fine. .
[0003]
However, the problem with miniaturizing the filler is that aggregation tends to occur in proportion to the fineness. Even if the gap cannot be filled well with the sealing material, the chip or the like may be formed by the aggregated particles. There was a fear of being scratched. To eliminate this, new measures such as the use of expensive silane coupling agents were required.
[0004]
[Problems to be solved by the invention]
An object of the present invention is to provide a liquid semiconductor encapsulant that is excellent in dispersibility and filling properties even if it is filled in a liquid epoxy resin without using a silane coupling agent, or there is no aggregated particle, even if it is present. Is to provide.
[0005]
[Means for Solving the Problems]
That is, the present invention is a silica raw material is supplied to the high-temperature flame (1800 ° C. or higher) in subjected to spheroidizing treatment, the time of collection while transporting the collection system with blower, collection cyclone or bag filter over Amorphous silica for liquid epoxy resin filler having a specific surface area of 0.5 to 40 m 2 / g and a hydrogen bond silanol group concentration of 8 pieces / nm 2 or less, characterized in that the temperature of the apparatus is 550 ° C. or higher It is a manufacturing method of powder.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in more detail.
[0007]
The filler of the present invention is made of amorphous silica powder. As a result, the difference in thermal expansion coefficient between the semiconductor sealing material filled with the liquid epoxy resin, the chip, and the solder bump can be reduced, so that cracks due to thermal expansion can be avoided.
[0008]
The filler of the present invention needs to have a specific surface area of 0.5 to 40 m 2 / g. When the specific surface area exceeds 40 m 2 / g, the liquid semiconductor encapsulant becomes too viscous and the filling property deteriorates. When the specific surface area is less than 0.5 m 2 / g, coarse particles are formed in the gap between the chip and the substrate. Clogging, unfilling, voids, etc. may occur and the moldability may be impaired.
[0009]
Furthermore, the filler of the present invention needs to have a hydrogen bond silanol group concentration of 8 / nm 2 or less. When the concentration of hydrogen-bonded silanol groups exceeds 8 / nm 2 , the filler tends to agglomerate, and problems such as unfilling similar to the above occur and the agglomeration force is strong. There is a risk of damaging the chip and the substrate. Even if it is attempted to solve this problem by adding a silane coupling agent, a sufficient effect cannot be obtained because uniform silane coupling treatment is difficult.
[0010]
In the present invention, the specific surface area is measured by the BET method, and the silanol group concentration is measured by the Karl Fischer method. Examples of these devices are a specific surface area measuring device (Model 4-SORB) manufactured by Yuasa Ionics and a trace moisture measuring device (Model CA-05) manufactured by Mitsubishi Chemical. The particle size frequency distribution is measured using, for example, a particle size measuring device (model LS-230 type) manufactured by Coulter.
[0011]
The concentration of silanol groups by the Karl Fischer method was set up in a moisture vaporizer, and argon gas dehydrated while being heated by an electric heater was supplied as a carrier gas, and the silanol groups attached to the sample surface condensed and volatilized. This is done by introducing water vapor into a measuring instrument and measuring the water content. In the present invention, moisture generated up to a heating temperature of less than 250 ° C. is physically adsorbed water, and moisture generated at a heating temperature of from 250 ° C. to less than 550 ° C. is due to dehydration condensation of hydrogen-bonded silanol groups, Moisture generated from a temperature of 550 ° C. to 900 ° C. was assumed to be due to dehydration condensation of isolated silanol groups, and based on this, the concentration of hydrogen-bonded silanol groups per unit surface area was calculated.
[0012]
The filler of the present invention is prepared, for example, in a method of oxidizing metal silicon fine powder in a flame or a method of melting siliceous raw material powder in a high temperature flame, adjusting the heat treatment conditions of the raw material, and setting the collection temperature to 550 ° C. It can manufacture by making it above.
[0013]
For example, an LPG-oxygen mixed burner is installed in the center of the burner using a vertical furnace with a vertical furnace placed at the top of the furnace and a collecting device such as a cyclone or bag filter connected to the bottom of the furnace. When a silica raw material is supplied from a two-fluid nozzle into a high-temperature flame (temperature of 1800 ° C. or higher) and subjected to spheroidization, and collected by conveying it to a collection system with a blower, a cyclone, bag filter, etc. It can manufacture by setting the temperature of a collection apparatus to 550 degreeC or more. It is preferable to use a ceramics filter as the heat-resistant filter cloth and collect it after cooling it to near room temperature in a dehumidified state.
[0014]
The filler of the present invention is filled in the liquid epoxy resin alone or in combination with other fillers. The filling amount is generally 100 to 200 parts in total with respect to 100 parts of liquid epoxy resin (parts by mass, the same applies hereinafter). When using together the filler of this invention and another filler, it is preferable that another filler is 200 parts or less with respect to 100 parts of fillers of this invention. Even if the dispersibility is poor with other fillers alone, dispersibility is improved by using the filler of the present invention in combination, and low viscosity is realized even when other fillers are highly filled, and the liquid has a low coefficient of thermal expansion. It becomes a semiconductor sealing material.
[0015]
Examples of other fillers used in combination with the filler of the present invention include silica, alumina, magnesia and the like. Among these, amorphous silica which is a low thermal expansion coefficient material is preferable.
[0016]
The liquid epoxy resin filled with the filler of the present invention is not particularly limited as long as it has two or more epoxy groups in one molecule, and specifically, bisphenol A type epoxy resin, bisphenol F type epoxy. Examples thereof include resins, alicyclic epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, and naphthalenediol type epoxy resins.
[0017]
【Example】
Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples.
[0018]
Examples 1-3 Comparative Examples 1-3
Table 1 shows the physical property values of the amorphous silica powder used. As these amorphous silica powders, powders having different specific surface areas and different numbers of hydrogen-bonded silanol groups were prepared by a method according to the example of Japanese Patent Application No. 11-228975. That is, the particle size of the natural silica powder raw material was adjusted to prepare a siliceous raw material powder having a particle content of 1 μm or less and 15% or less and an average particle diameter of 5 μm. They were transported by a carrier gas (oxygen 25 Nm 3 / Hr) to the burner, injected into a high temperature flame formed by propane gas (18 Nm 3 / Hr) and oxygen (65 nm 3 / Hr), were melt spheroidizing operation It was. The powder concentration (powder raw material input amount (kg / Hr) / propane gas amount (Nm 3 / Hr)) was 2.0 in any experimental example. The collection chamber was installed immediately after the melting furnace, and the amount of outside air taken into the system was adjusted with an outside air adjustment valve to adjust the temperature of the collection chamber to the value shown in Table 1. The collection was performed using a porous silicon carbide ceramic filter (porosity 76%), and the powder collected at a high temperature was then cooled in a dehumidified state. About the collected spherical silica, the specific surface area was adjusted by adjusting the rotational speed of the classifier (“Classeal N-20 type” manufactured by Onoda Engineering Co., Ltd.) offline. The number of hydrogen-bonded silanol groups was adjusted by changing the collection temperature.
[0019]
100 parts of the above amorphous silica powder is filled into 100 parts of a liquid epoxy resin (“AER-250” manufactured by Asahi Ciba Co., Ltd., a bisphenol A type epoxy resin) to prepare a liquid semiconductor sealing material. The aggregation state of the amorphous silica powder was measured. The results are shown in Table 1.
[0020]
(1) Fillable simulated semiconductor element is connected face-down on a ceramic substrate through solder bumps, heated to 60 ° C. with a heater, and a syringe is used in the gap between the simulated semiconductor element and the substrate in this state. Each liquid semiconductor encapsulant was poured under atmospheric pressure and the degree of filling was evaluated 45 minutes later. Judgment was carried out visually, and “◯” was given when no void or unfilled part was found, and “X” was given when it was found.
[0021]
(2) Viscosity Using an EHD viscometer (Tokyo Keiki Co., Ltd.), a 3 ° R14 rotating rotor was used, and the viscosity was measured at 60 ° C. and a rotating speed of 10 rpm. In Comparative Example 2, since aggregation was remarkable, the resin could not be uniformly dispersed and viscosity measurement could not be performed.
[0022]
(3) The liquid semiconductor sealing material used for the aggregation state viscosity measurement was sandwiched between glass plates, and the aggregation state was visually observed and evaluated in three stages.
A: Agglomerated particles having a size that can be detected visually are not recognized.
Δ: Several agglomerated particles having a size that can be detected visually are observed.
X: Ten or more aggregated particles having a size that can be visually detected are recognized.
[0023]
Example 4
30 parts of the amorphous silica powder of Example 1, 90 parts of spherical fused silica powder (average particle size 8 μm) as another filler, and 80 parts of liquid epoxy resin were mixed to prepare a liquid semiconductor sealing material. Evaluation was performed in the same manner as in 1.
[0024]
[Table 1]
[0025]
[Table 2]
[0026]
As is clear from Tables 1 and 2, the liquid semiconductor encapsulants filled with the filler of the present invention (Examples 1 to 3) achieve a lower viscosity than Comparative Examples 1 to 3, It can be seen that there are no aggregate particles. Further, by using the filler of the present invention in combination with another filler (Example 4), a low viscosity could be realized even when the other filler amount was high.
[0027]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the liquid semiconductor sealing material excellent in filling property and fluidity | liquidity can be provided.
Claims (1)
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| JP2001014532A JP4767424B2 (en) | 2001-01-23 | 2001-01-23 | A method for producing amorphous silica powder. |
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| JP2005105214A (en) * | 2003-10-01 | 2005-04-21 | Matsushita Electric Works Ltd | Thermosetting resin composition |
| CN100441619C (en) | 2004-04-30 | 2008-12-10 | 株式会社吴羽 | Resin composition for encapsulation and resin-encapsulated semiconductor device |
| CN115448317B (en) * | 2022-10-18 | 2023-10-20 | 江苏联瑞新材料股份有限公司 | A method for simultaneously preparing nanometer and submicrometer spherical oxide fillers |
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| JP3238340B2 (en) * | 1996-12-04 | 2001-12-10 | 住友ベークライト株式会社 | Liquid epoxy resin sealing material |
| JP2001151866A (en) * | 1999-11-30 | 2001-06-05 | Hitachi Chem Co Ltd | Epoxy resin molding compound for sealing use and electronic part device |
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