JP4789080B2 - Method for producing amorphous fine silica particles - Google Patents
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Description
【0001】
【発明の属する技術分野】
本発明は、半導体封止材の充填材、プラスチックフィルムやシートのアンチブロッキング用フィラー、あるいは電子写真方式を用いた複写機、プリンター、ファクシミリ、製版システムなどにおける電子写真用トナーの外添剤や内添剤、また電子写真感光体の表面保護層や電荷輸送層の材料として好適な非晶質球体シリカ微粒子とその製造方法に関する。
【0002】
半導体樹脂封止材にはその流動性や耐バリ性を改善するためにシリカ微粉体が充填剤として添加されるが、本発明はこの充填剤として好適な非晶質球状シリカ微粒子とその製造方法に関する。また、プラスチックフィルムやシートにフィラーを添加してフィルム表面に微細な凹凸を形成し、接触面積を減少させてブロッキングを防止することが知られているが、本発明の非晶質微細シリカ粒子はこのフィラーとしても好適である。さらに、電子写真用トナーの流動性や耐熱性および長期保存性を改善し、さらに帯電性やクリーニング特性、キャリアや感光体表面での付着性、現像材劣化挙動などを制御する目的で外添剤が用いられ、また電子写真用トナーの耐久性を改善し、また電気的あるいは機械的な負荷がかかる電子写真感光体の表面保護層の耐久性を高めるために内添剤が用いられるが、本発明はこのような外添剤および内添剤としても広く用いることができる非晶質微細シリカ粒子とその製造方法に関する。
【0003】
【従来技術】
半導体用樹脂充填材として用いるシリカフィラーはできるだけ高純度であってその形状が真球に近く、適切な粒度分布を有するものが良く、さらに高充填および高流動性であるためにはそのシリカ粒子間の微細空間にも充填でき、かつ粒子間の滑りも向上できるものが有効であり、このため、概ね平均粒径0.1〜1μmおよびBET比表面積(以下、単に比表面積と云う)5〜30m2/g程度の粒子が使用されている。また、現在、電子写真用トナーの外添剤として流動性改善、帯電制御の目的で一般に平均粒径0.006〜0.040μmのシリカ粒子やチタニア粒子等が用いられており、内添剤として平均粒径0.005〜0.040μmのシリカ粒子が用いられているが、高速化、高画像化および現像材劣化挙動等の制御などに対応できるシャープな粒度分布を持った微細シリカ粒子が求められている。また、電子写真感光体の表面保護層や電荷輸送層の耐久性を高めるために、平均粒径0.005〜0.150μmのシリカ粒子が用いられているが、珪酸ナトリウムを原料として製造される湿式シリカやシリカゲルはソーダ等のアルカリ金属の含有量が高い問題があり、これに代わる適切な粒度のアルカリ金属量の少ない微細シリカ粒子が求められている。
【0004】
ところで、従来のゾル・ゲル法では1μm以下の微粒子を製造するのは困難であり、このような充填材料として好ましい粒度のシリカ微粒子を得るのは難しい。しかも、ゾル・ゲル法では1μm以下の微粒子を生成しても、その反応物を安定したシリカ粒子に焼成する際に粒子どうしの成長および焼結が生じ、この粒度のままで単分散可能なシリカ粒子を安定に得ることができない。また、焼成不十分なゾル・ゲル反応物微粒子はシラノール基や有機物が過度に残留しており、これを混練・充填したコンパウンドは射出成形・加工する際に気体が発生するなどの問題があり、半導体樹脂封止材用充填材には使用できない。
【0005】
一方、二酸化チタン粒子については、四塩化チタンを原料として用い、高温下でこれを酸素ガスで直接酸化することによって0.1μm以上の結晶性粒子を製造する方法が知られているが、シリカの直接酸化反応は二酸化チタンよりも高温下で行う必要があり、しかも融点(1730℃)と沸点(2230℃)が近いために粒子の成長が十分ではなく0.1μm以下の超微粒子になりやすい。しかも生産性も低い。従って、この方法によっても充填材料として好ましい粒度のシリカ粒子を得るのが難しい。
【0006】
また、酸素含有雰囲気中で金属珪素粉末に着火し、火炎を形成して連続的に酸化燃焼させる方法は、製造されるシリカ粉末の純度が低いと云う問題がある。半導体封止樹脂に用いるシリカ微粉末は高純度のものが求められ、特に、放射線エラーを生じないようにウラン含有量が可能な限り少ないものが必要とされる。ところが、金属珪素の精製は困難であり、これを原料とする酸化燃焼法では高純度のシリカ微粉末を低コストで製造することができない。
【0007】
【発明が解決しようとする手段】
本発明は、従来の製造方法における上記問題を解決したものであり、形状が真球に近く、適度が粒度分布を有する高純度の非晶質微細シリカ粒子を低コストで製造する方法を提供するものであり、また、そのシリカ微粒子に関するものである。
【0008】
【課題を解決する手段】
すなわち、本発明は(1)ガス状の珪素化合物を火炎中に導いて加水分解することにより非晶質シリカ微粒子を製造する方法において、火炎温度をシリカの融点以上および火炎中のシリカ濃度を0.25kg/Nm3以上とし、生成したシリカ粒子をシリカの融点以上の高温下に短時間滞留させ、平均粒径(メジアン径)0.1〜0.7μmおよび比表面積5〜30m2/gの非晶質シリカ粒子を得ることを特徴とする非晶質微細シリカ粒子の製造方法に関する。
【0009】
本発明の製造方法は以下の態様を含む。
(2)火炎中のシリカ濃度(v)が0.25〜1.0kg/Nm3である上記(1)の製造方法。
(3)シリカ粒子の火炎中の滞留時間(t)が0.02〜0.30秒である上記(1)または(2)の製造方法。
(4)シリカ粒子の比表面積(S)、メジアン径(r)、火炎中のシリカ濃度(v)、シリカ粒子の火炎中の滞留時間(t)を、おのおの次式[I]または[II]に従って制御する上記(1)、(2)または(3)の製造方法。
S=3.52(v・t)-0.4 ……[I]
r=1.07(v・t)0.4 ……[II]
【0010】
本発明の製造方法によれば、平均粒径(メジアン径)0.1〜0.7μmおよび比表面積5〜30m2/gであって、次式[III]で表される分散係数(z)が40以下である非晶質微細シリカ粒子を製造することができる。
z=Y/2X ……[III]
(Xはメジアン径、Yは累積10%到達粒径から累積90%到達粒径までの粒径範囲)
【0011】
本発明の方法によって製造した非晶質微細シリカ粒子は、半導体樹脂封止材の充填材、プラスチックフィルムないしシートのアンチブロッキング用フィラー、トナー用外添剤、あるいは電子写真感光体の表面保護層もしくは電荷輸送層に用いることができる。
【0012】
本発明の方法によって製造した非晶質微細シリカ粒子は、半導体封止用樹脂の充填材、プラスチックフィルム等のアンチブロッキング用フィラー、あるいは電子写真トナーや感光体などの電子写真材料の外添剤ないし内添剤として好適な粒度分布を有しており、これらの充填材料として優れた効果を発揮する。また、本発明の製造方法によればこの非晶質微細シリカ粒子を容易に製造することができる。
【0013】
【発明の実施の形態】
以下、本発明を実施形態に基づいて詳細に説明する。
( I ) 製造方法
本発明の製造方法は、ガス状の珪素化合物を火炎中に導いて加水分解することにより非晶質シリカ微粒子を製造する方法において、火炎温度をシリカの融点以上および火炎中のシリカ濃度を0.25kg/Nm3以上とし、生成したシリカ粒子をシリカの融点以上の高温下に短時間滞留させ、平均粒径(メジアン径)0.1〜0.7μmおよび比表面積5〜30m2/gの非晶質シリカ粒子を得ることを特徴とする方法である。
【0014】
本発明の製造方法は火炎加水分解法に基づいており、珪素化合物の原料ガスを火炎中に導いて加水分解することによりシリカ粒子を製造する。原料の珪素化合物としては、四塩化珪素、トリクロロシラン、ジクロロシラン、メチルトリクロロシラン等のガス状で酸水素炎中に導入され、高温下で加水分解反応を生じるものが用いられる。これらの四塩化珪素等のガス状珪素化合物は蒸留精製が容易であり、原料中の不純物を容易に除去できるので高純度のシリカ粒子を製造することができる。
【0015】
可燃性ガスおよび支燃性ガスを用いて火炎を形成し、火炎温度をシリカの融点(1730℃)以上に高める。可燃性ガスとしては水素や水素含有ガス、水素生成ガスを使用することができる。支燃性ガスとしては酸素や酸素含有ガスを使用することができる。火炎温度がシリカの融点より低いと目的とする粒径のシリカ粒子を得るのが難しい。
【0016】
これらの原料ガス(珪素化合物ガス)、可燃性ガス、支燃性ガスは燃焼バーナによって火炎を形成するが、本発明の火炎加水分解法では、生成したシリカ粒子がシリカ融点以上の高温下で滞留する時間を確保するため、燃焼バーナの外周部で可燃性ガスを燃焼させることによって輻射で失われる熱量を補うと良い。また、反応容器は火炎温度をシリカの融点以上に保持するために1000℃以上の高温に耐える構造とし、排気側には排風機等を設けて吸引し、容器内の圧力を大気圧基準で−200mmAgから−10mmAg程度の負圧に保つことが好ましい。
【0017】
本発明の製造方法では、原料ガスの供給量等を制御して火炎中のシリカの濃度を0.25kg/Nm3以上、好ましくは0.25〜1.0kg/Nm3程度に調整する。このシリカ濃度が0.25kg/Nm3より低いと十分に粒子が成長せず、所望の粒径のものが得られない。一方、シリカ濃度が1.0kg/Nm3を上回るとバーナにシリカが付着しやすくなり、また粒径の制御も難しい。
【0018】
さらに、本発明の製造方法は、火炎加水分解によって生成したシリカ粒子を火炎中(シリカの融点以上の高温下)に短時間滞留させることによってシリカ粒子を成長させ、その粒径を制御する。この滞留時間は0.02〜0.30秒が適当である。滞留時間が0.02秒以下では粒子の成長が十分ではない。また、滞留時間が0.30秒より長いと生成したシリカ粒子どうしの融着が生じ、さらに反応容器内壁に対するシリカの付着も顕著になるので好ましくない。
【0019】
なお、原料ガス、可燃性ガスおよび支燃性ガスに希釈用ガス(空気や窒素ガスなど)を導入して燃焼温度およびガス流速を調整することにより。シリカ粒子の粒径を制御することができる。希釈用ガスの供給量を増加して火炎温度を下げると共にガス流速を高めると、シリカの滞留時間が減少し、粒子の成長が制限されるので比較的粒径が小さく、従って、比表面積の大きなシリカ粒子となる。
【0020】
具体的には、本発明の製造方法において製造するシリカ粒子の比表面積(S)、メジアン径(r)、火炎中のシリカ濃度(v)、シリカ粒子の火炎中の滞留時間(t)はおのおの次式[I]または[II]に従って制御される。
S=3.52(v・t)-0.4 ……[I]
r=1.07(v・t)0.4 ……[II]
本発明の製造方法によって得られる微細シリカ粒子の比表面積(S)とメジアン径(r)は、図2および図3のグラフに示すように、それぞれ火炎中のシリカ濃度(v)と滞留時間(t)の積に対して、上記[I][II]式で表される対数曲線に示す関係を有することが見出される。従って、このシリカ濃度と滞留時間を因子としてシリカ粒子の比表面積(S)やメジアン径(r)を制御することができる。また目的の比表面積やメジアン径に応じて火炎中のシリカ濃度や滞留時間を制御する。
【0021】
反応容器から取り出したシリカ粒子は、焼結や融着、再結晶、あるいは表面変化などが生じないように急速に冷却し、水または他の凝縮しやすい反応物の露点以上の温度にして分離、回収する。この回収装置は集塵機、サイクロン、バグフィルターなどを用いることができる。回収したシリカ粒子には燃焼ガス中に含まれる塩化水素などのハロゲン、ハロゲン化合物、窒素酸化物などが吸着しているのでこれらを除去するのが好ましい。シリカ粒子に吸着しているこれらの揮発性の陰イオン性不純物は電気炉、流動層、ロータリーキルン等での加熱処理により除去ないし低減することができる。この加熱処理は連続処理ないしバッチ処理の何れでも良い。加熱処理は高温で処理時間が長いほどその除去・低減効果が高いが、800℃以上の高温ではシリカ粒子の凝集ないし融着等を生じる懸念があるのでこの温度以下が適当である。半導体材料として用いるには可能な限り不純物の少ない高純度のシリカが求められるが、このような吸着不純物を除去することによって半導体材料用として好適なシリカ粒子を得ることができる。
【0022】
(II) 微細シリカ粒子
上記製造方法によれば、平均粒径(メジアン径)0.1〜0.7μmおよび比表面積5〜30m2/gであって、次式[III]で表される分散係数(z)が40%以下の非晶質微細シリカ粒子を得ることができる。
z=Y/2X ・・・・[III]
ここで、Xはメジアン径、Yは累積10%到達粒径から累積90%到達粒径までの粒径範囲である。式[III]から明らかなように、分散係数zは上記シリカ粒子のメジアン径を中心とする分布状態を示し、この値が小さいものほどメジアン径付近に粒度分布が集中している。なお、累積10%未満の粒径範囲、および累積90%を上回る粒径範囲は何れも分布の誤差が大きくなるので、累積10%到達粒径から累積90%到達粒径までの粒径範囲Yを基準とする。
【0023】
なお、本発明のシリカ粒子に類似する既存のシリカ粒子の分散係数(z)は概ね43%以上であり本発明よりも分布が広い。従って、粒子間の滑り性を付与する場合に比較的多くの添加量を必要とする。一方、本発明の微細シリカ粒子はその分布がメジアン径付近に集中しており、従来品よりも格段に粒度が均一であるので、粒子間の滑り性を付与する場合に比較的少量の添加で効果が得られる利点がある。
【0024】
また、本発明の微細シリカ粒子は容易に単分散可能な粒子である。このように本発明の微細シリカ粒子はメジアン径が従来のシリカ粒子より小さく、しかもメジアン径付近に粒度分布が集中しており、粒径が格段に均一であるので、半導体用の樹脂コンパウンドの流動性や耐バリ性等を改善するために用いられるシリカフィラーとして好適である。因みに、粒径が上記範囲より小さく比表面積が大きいものはコンパウンドの流動性が低下し、一方、上記範囲より粒径が大きく比表面積の小さいものは耐バリ性が低下する。
【0025】
さらに、本発明のシリカ微粒子はほぼ完全な非晶質粒子であり、真球に近い粒子形状を有している。従って、半導体用樹脂コンパウンドの充填材料として優れた効果を発揮する。なお、図1に対比して示すように、充填材料等として市販されている従来のシリカ粒子は、その粒度分布のピークが本発明のシリカ粒子よりも1μm側に片寄り、本発明のシリカ粒子よりも粒径が大きい。
【0026】
本発明の微細シリカ粒子はプラスチックフィルムないしシートのアンチブロックキング用フィラーとしても好適である。アンチブロッキング用フィラーはフィルムやシートの表面に微細な凹凸を形成することによってブロッキングを防止する目的で使用され、耐摩耗ないし耐スクラッチ用フィラーよりは粒径が大きく、かつ粒径1μm以下の粒度分布がシャープな粒子が求められる。また、アンチブロッキング用フィラーはプラスチックフィルムないしシートから離脱しない化学的に安定なものが必要とされ、かつ製造時ないし成形加工時に気体を発生させることがなく、樹脂との親和性の高いものが求められる。本発明の微細シリカ粒子はこのアンチブロッキング用フィラーとして好適である。
【0027】
本発明の微細シリカ粒子は以上のように比表面積ないしメジアン径が制御されており、かつ高純度であるので、電子写真用トナーの外添剤や内添剤としても好適である。
【0028】
本発明のシリカ粒子はガス状の珪素化合物(四塩化珪素ガス等)を原料に用いるので蒸留によって不純物を除去するのが容易であり、ウラン含有量などが少ない高純度のシリカ粒子を得ることができる。具体的には、ウラン含有量0.5ppb以下、アルミニウムおよび鉄の含有量が各々500ppm以下、カルシウム含有量50ppm以下、ナトリウム、マンガン、クロムおよびリンの含有量が各々10ppm以下のシリカ微粒子を得ることができる。また、火炎加水分解によって製造したシリカ微粒子を回収する際の加熱処理によって吸着不純物が除去・低減されるので高純度のシリカ微粒子が得られる。半導体メモリーは、その材料に含まれるα線によるソフトエラーを防止するためウラン含有量が可能な限り少ないものが求められる。従って、本発明の高純度シリカ微粒子はこの点からも好ましい。
【0029】
【実施例】
以下、実施例によって本発明を具体的に示す。
【0030】
〔実施例1〕
図1に示すように、原料の珪素化合物の気化して供給するための蒸発器1、原料の珪素化合物ガスを供給する供給管2、可燃性ガスを供給する供給管3、支燃性ガスを供給する供給管4、これらの供給管2〜4に接続したバーナー5、火炎加水分解反応を行う反応器6、反応容器6の下流に連結された冷却管7、製造されたシリカ粉末を回収する回収装置8、さらに下流に排ガス処理装置9、排風機10からなる製造装置を用い、以下のようにして非晶質微細シリカ粒子を製造した。なお、反応容器6の内壁は1000℃以上の高温に耐えるようにアルミナ煉瓦で内張りして用いた。
製造工程
支燃性ガス供給管を開いて酸素ガスをバーナーに供給し、着火用バーナー(図示省略)に点火した後、可燃性ガス供給管を開いて水素ガスをバーナーに供給して火炎を形成し、これに四塩化珪素を蒸発器1にてガス化して供給し、表2に示す条件下で火炎加水分解反応を行わせ、生成したシソカ粉末を回収装置8のバグフィルターで回収した。粉末回収後の排ガスは排ガス処理装置9で処理し、排風機10を通じて排気した。原料の四塩化珪素ガス量、水素ガスおよび酸素ガスの量、火炎中のシリカ濃度と滞留時間、生成したシリカ粒子の粒度および分布係数を表1にまとめて示した。なお、既存品のシリカ粒子の値を対比して示した。また、実施例No.1〜6、および既存品の粒度分布を図2に示した。
【0031】
【表1】
【0032】
表1および図2に示すように、No.1〜6のシリカ粒子は比表面積13.2〜30.0m2/g、平均粒径(メジアン径)0.195〜0.37μm、分布係数31〜35%であり、何れも本発明の範囲に含まれる。一方、既存品のシリカ粒子は比表面積とメジアン径が本発明の範囲に含まれるものの分散係数は本発明のシリカ粒子よりも大きく、粒度分布のピークが本発明のシリカ粒子より大きい。
【0033】
No.1〜6のシリカ粒子について、火炎中のシリカ濃度(v)と滞留時間(t)の積に対する比表面積(S)とメジアン径(r)の関係を図3および図4に示した。この結果から、火炎中のシリカ濃度(v)と滞留時間(t)の積は比表面積(S)とメジアン径(r)に対して次式[I][II]の関係にあることが見出された。
S=3.52(v・t)-0.4 ……[I]
r=1.07(v・t)0.4 ……[II]
【0034】
〔実施例2〕
ビフェニル型エポキシ樹脂にフェノールノボラック型硬化剤を添加した表2に示す組成の樹脂分に、標準フィラーに実施例1のシリカ粉末(No.1〜6)を加えたフィラーを配合して試験用コンバウンドを調製した。このコンパウンドを加熱したミキシングロールミル(2本ロール)で5分間混練し、そのスパイラルフローとバリ長さを測定した。この結果を表3に示した。なお、シリカフィラーは標準フィラーに対して全フィラー中での重量比が5%、10%となるように調合し、コンパウンド中のシリカフィラー充填率を88.0重量%とした。標準フィラーは平均粒経22.4μm、比表面積2.3m2/gの球状シリカ粒子を使用した。測定は各試料を射出試験機にて加熱温度180℃、射出圧力70kg/cm2G、100秒間で各測定用金型に射出し、スパイラルフローおよびバリの長さを測定した。比較基準との対比から明らかなように、本発明のシリカ粒子を添加したものは何れもスパイラルフローおよびバリ長さが低減されており、この効果は概ね添加量に比例している。
【0035】
【表2】
【0036】
【表3】
【0037】
【発明の効果】
本発明の製造方法によれば、平均粒径(メジアン径)0.1〜0.7μmおよび比表面積が5〜30m2/gであって、分散係数(z)40%以下のシャープな粒度分布を有するシリカ微粒子を得ることができる。このシリカ微粒子は真球に近い粒子形状を有し、しかも粒径が格段に均一である。従って、半導体用の樹脂充填材料やプラスチックフィルムないしシートのアンチブロッキング用フィラーとして好適である。
【図面の簡単な説明】
【図1】 本発明の製造方法を実施する製造装置の構成図
【図2】 本発明のシリカ微粒子と既存品の粒度分布を示すグラフ
【図3】 本発明に係るシリカ粒子の比表面積の関係式を示すグラフ
【図4】 本発明に係るシリカ粒子のメジアン径の関係式を示すグラフ
【符号の説明】
1−蒸発器、2−原料ガスの供給管2、3−可燃性ガスの供給管、4−支燃性ガスの供給管、5−燃焼バーナー、6−反応容器、7−冷却管、8−回収装置、9−排ガス処理装置9、10−排風機。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a filler for a semiconductor encapsulant, an anti-blocking filler for a plastic film or sheet, or an external additive or internal additive for an electrophotographic toner in a copying machine, printer, facsimile, plate making system, etc. using an electrophotographic system. The present invention relates to an amorphous spherical silica fine particle suitable as an additive and a material for a surface protective layer and a charge transport layer of an electrophotographic photosensitive member, and a method for producing the same.
[0002]
Silica fine powder is added to the semiconductor resin encapsulant as a filler in order to improve its fluidity and burr resistance, and the present invention provides an amorphous spherical silica fine particle suitable as this filler and a method for producing the same. About. In addition, it is known that fillers are added to a plastic film or sheet to form fine irregularities on the film surface, and the contact area is reduced to prevent blocking. It is also suitable as this filler. Furthermore, external additives are used to improve the fluidity, heat resistance and long-term storage stability of electrophotographic toners, and to control the charging properties, cleaning properties, adhesion on the surface of carriers and photoreceptors, and developer deterioration behavior. In addition, an internal additive is used to improve the durability of the electrophotographic toner and to increase the durability of the surface protective layer of the electrophotographic photosensitive member that is subjected to an electrical or mechanical load. The present invention relates to amorphous fine silica particles that can be widely used as such an external additive and an internal additive, and a method for producing the same.
[0003]
[Prior art]
Silica filler used as a resin filler for semiconductors should have as high a purity as possible, have a shape close to a true sphere, and have an appropriate particle size distribution. It is effective to be able to fill the fine space and improve the slippage between the particles. For this reason, an average particle diameter of 0.1 to 1 μm and a BET specific surface area (hereinafter simply referred to as a specific surface area) of 5 to 30 m are effective. Particles of about 2 / g are used. At present, silica particles and titania particles having an average particle diameter of 0.006 to 0.040 μm are generally used as external additives for electrophotographic toners for the purpose of improving fluidity and controlling charging. Silica particles with an average particle size of 0.005 to 0.040 μm are used, but there is a demand for fine silica particles with a sharp particle size distribution that can cope with high speed, high image quality, and control of developer deterioration behavior. It has been. In addition, silica particles having an average particle diameter of 0.005 to 0.150 μm are used to enhance the durability of the surface protective layer and the charge transport layer of the electrophotographic photosensitive member. Wet silica and silica gel have a problem that the content of alkali metals such as soda is high, and there is a demand for fine silica particles having an appropriate particle size and a small amount of alkali metals.
[0004]
By the way, it is difficult to produce fine particles of 1 μm or less by the conventional sol-gel method, and it is difficult to obtain silica fine particles having a preferable particle size as such a filling material. Moreover, even if fine particles of 1 μm or less are produced by the sol-gel method, the particles are grown and sintered when the reaction product is baked into stable silica particles, and the silica can be monodispersed at this particle size. The particles cannot be obtained stably. In addition, sol / gel reactant fine particles that are insufficiently fired contain excessive silanol groups and organic matter, and the compound that is kneaded / filled with this has problems such as gas generation during injection molding / processing, It cannot be used as a filler for semiconductor resin encapsulant.
[0005]
On the other hand, for titanium dioxide particles, a method of producing crystalline particles of 0.1 μm or more by using titanium tetrachloride as a raw material and directly oxidizing it with oxygen gas at a high temperature is known. The direct oxidation reaction must be performed at a higher temperature than titanium dioxide, and since the melting point (1730 ° C.) and boiling point (2230 ° C.) are close to each other, the particle growth is not sufficient, and ultrafine particles of 0.1 μm or less tend to be formed. Moreover, productivity is low. Therefore, it is difficult to obtain silica particles having a preferable particle size as a filling material even by this method.
[0006]
In addition, the method of igniting metallic silicon powder in an oxygen-containing atmosphere, forming a flame, and continuously oxidizing and burning has a problem that the purity of the produced silica powder is low. The fine silica powder used for the semiconductor encapsulating resin is required to have a high purity, and in particular, a uranium content as low as possible is required so as not to cause a radiation error. However, it is difficult to purify metallic silicon, and high-purity silica fine powder cannot be produced at low cost by the oxidation combustion method using this as a raw material.
[0007]
Means to be Solved by the Invention
The present invention solves the above problems in the conventional production method, and provides a method for producing high-purity amorphous fine silica particles having a shape close to a true sphere and moderately having a particle size distribution at low cost. And relates to the silica fine particles.
[0008]
[Means for solving the problems]
That is, the present invention is (1) in a method for producing amorphous silica fine particles by introducing a gaseous silicon compound into a flame and hydrolyzing it, and setting the flame temperature to the melting point of silica or higher and the silica concentration in the flame to 0. 0.25 kg / Nm 3 or more, and the generated silica particles are allowed to stay for a short time at a temperature higher than the melting point of silica, and have an average particle diameter (median diameter) of 0.1 to 0.7 μm and a specific surface area of 5 to 30 m 2 / g. The present invention relates to a method for producing amorphous fine silica particles, wherein amorphous silica particles are obtained.
[0009]
The production method of the present invention includes the following aspects.
(2) The production method of the above (1), wherein the silica concentration (v) in the flame is 0.25 to 1.0 kg / Nm 3 .
(3) The production method of the above (1) or (2), wherein the residence time (t) of the silica particles in the flame is 0.02 to 0.30 seconds.
(4) The specific surface area (S), median diameter (r), silica concentration (v) in the flame, and residence time (t) in the flame of the silica particles are expressed by the following formula [I] or [II] (1), (2) or (3) production method controlled according to
S = 3.52 (v · t) -0.4 …… [I]
r = 1.07 (v · t) 0.4 …… [II]
[0010]
According to the production method of the present invention, the average particle diameter (median diameter) is 0.1 to 0.7 μm, the specific surface area is 5 to 30 m 2 / g, and the dispersion coefficient (z) represented by the following formula [III] Amorphous fine silica particles having a particle size of 40 or less can be produced.
z = Y / 2X ...... [III]
(X is the median diameter, Y is the particle size range from 10% cumulative particle size to 90% cumulative particle size)
[0011]
The amorphous fine silica particles produced by the method of the present invention include a semiconductor resin sealing material filler, a plastic film or sheet anti-blocking filler, a toner external additive, or a surface protective layer of an electrophotographic photoreceptor. It can be used in actual charge-transporting layer.
[0012]
The amorphous fine silica particles produced by the method of the present invention can be used as a filler for semiconductor encapsulation, an anti-blocking filler such as a plastic film, or an external additive for electrophotographic materials such as electrophotographic toners and photoreceptors. It has a particle size distribution suitable as an internal additive, and exhibits excellent effects as a filling material. Further, according to the production method of the present invention, the amorphous fine silica particles can be easily produced.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail based on embodiments.
( I ) Production method The production method of the present invention is a method for producing amorphous silica fine particles by introducing a gaseous silicon compound into a flame and hydrolyzing it, wherein the flame temperature is higher than the melting point of silica. The silica concentration in the flame is set to 0.25 kg / Nm 3 or more, and the generated silica particles are retained for a short time at a temperature higher than the melting point of silica, and the average particle diameter (median diameter) is 0.1 to 0.7 μm and the ratio It is a method characterized by obtaining amorphous silica particles having a surface area of 5 to 30 m 2 / g.
[0014]
The production method of the present invention is based on a flame hydrolysis method, in which silica particles are produced by introducing a silicon compound source gas into a flame and hydrolyzing it. As the raw material silicon compound, those which are introduced into an oxyhydrogen flame in the form of a gas such as silicon tetrachloride, trichlorosilane, dichlorosilane, methyltrichlorosilane, etc., and cause a hydrolysis reaction at a high temperature are used. These gaseous silicon compounds such as silicon tetrachloride are easily purified by distillation, and impurities in the raw material can be easily removed, so that high-purity silica particles can be produced.
[0015]
A flammable gas and a flammable gas are used to form a flame, and the flame temperature is raised above the melting point of silica (1730 ° C.). As the combustible gas, hydrogen, a hydrogen-containing gas, or a hydrogen generating gas can be used. As the combustion-supporting gas, oxygen or an oxygen-containing gas can be used. When the flame temperature is lower than the melting point of silica, it is difficult to obtain silica particles having a target particle size.
[0016]
These source gases (silicon compound gas), flammable gas, and flammable gas form a flame with a combustion burner.In the flame hydrolysis method of the present invention, the generated silica particles stay at a high temperature above the melting point of silica. In order to ensure the time to do, it is good to supplement the quantity of heat lost by radiation by burning a combustible gas in the outer peripheral part of a combustion burner. In addition, the reaction vessel has a structure that can withstand a high temperature of 1000 ° C. or higher in order to keep the flame temperature above the melting point of silica, and an exhaust fan is provided on the exhaust side for suction, and the pressure in the vessel is − It is preferable to maintain a negative pressure of about 200 mmAg to -10 mmAg.
[0017]
In the production method of the present invention, by controlling the supply amount of the raw material gas concentration of the silica in the flame 0.25 kg / Nm 3 or more, preferably adjusted to about 0.25~1.0kg / Nm 3. If the silica concentration is lower than 0.25 kg / Nm 3 , the particles do not grow sufficiently and a desired particle size cannot be obtained. On the other hand, if the silica concentration exceeds 1.0 kg / Nm 3 , silica tends to adhere to the burner and the particle size is difficult to control.
[0018]
Furthermore, in the production method of the present invention, silica particles produced by flame hydrolysis are allowed to stay for a short time in a flame (at a high temperature not lower than the melting point of silica) to control the particle size. The residence time is suitably from 0.02 to 0.30 seconds. When the residence time is 0.02 seconds or less, the particle growth is not sufficient. Further, if the residence time is longer than 0.30 seconds, the produced silica particles are fused with each other, and the silica adheres to the inner wall of the reaction vessel, which is not preferable.
[0019]
By adjusting the combustion temperature and gas flow rate by introducing a dilution gas (air, nitrogen gas, etc.) into the source gas, combustible gas, and combustion-supporting gas. The particle size of the silica particles can be controlled. Increasing the supply of dilution gas and lowering the flame temperature and increasing the gas flow rate will reduce the residence time of the silica and limit particle growth, so the particle size is relatively small and therefore the specific surface area is large. Silica particles.
[0020]
Specifically, the specific surface area (S), median diameter (r), silica concentration (v) in the flame, and residence time (t) of the silica particles in the flame are each determined in the production method of the present invention. It is controlled according to the following formula [I] or [II].
S = 3.52 (v · t) -0.4 …… [I]
r = 1.07 (v · t) 0.4 …… [II]
As shown in the graphs of FIGS. 2 and 3, the specific surface area (S) and median diameter (r) of the fine silica particles obtained by the production method of the present invention are the silica concentration (v) and residence time ( It is found that there is a relationship shown in the logarithmic curve represented by the above formula [I] [II] with respect to the product of t). Therefore, the specific surface area (S) and median diameter (r) of the silica particles can be controlled using the silica concentration and the residence time as factors. In addition, the silica concentration and residence time in the flame are controlled according to the target specific surface area and median diameter.
[0021]
Silica particles removed from the reaction vessel are rapidly cooled to prevent sintering, fusing, recrystallization, or surface changes, and separated to a temperature above the dew point of water or other condensable reactants. to recover. This collection device can use a dust collector, a cyclone, a bag filter, or the like. Since the recovered silica particles are adsorbed with halogen such as hydrogen chloride, halogen compounds, nitrogen oxides, etc. contained in the combustion gas, it is preferable to remove them. These volatile anionic impurities adsorbed on the silica particles can be removed or reduced by heat treatment in an electric furnace, fluidized bed, rotary kiln or the like. This heat treatment may be either continuous treatment or batch treatment. The heat treatment has a higher removal / reduction effect as the treatment time is higher at a higher temperature, but there is a concern that silica particles may be aggregated or fused at a high temperature of 800 ° C. or higher. For use as a semiconductor material, high-purity silica with as few impurities as possible is required. By removing such adsorbed impurities, silica particles suitable for semiconductor materials can be obtained.
[0022]
(II) Fine silica particles According to the above production method, the average particle diameter (median diameter) is 0.1 to 0.7 μm, the specific surface area is 5 to 30 m 2 / g, and the following formula [III] Amorphous fine silica particles having a dispersion coefficient (z) of 40% or less can be obtained.
z = Y / 2X ・ ・ ・ ・ [III]
Here, X is a median diameter, and Y is a particle size range from a cumulative particle size reaching 10% to a cumulative particle size reaching 90%. As is apparent from the formula [III], the dispersion coefficient z indicates a distribution state centered on the median diameter of the silica particles, and the smaller the value, the more the particle size distribution is concentrated in the vicinity of the median diameter. In addition, since the distribution error increases in both the particle size range less than 10% cumulative and the particle size range greater than 90% cumulative, the particle size range Y from the cumulative 10% reached particle size to the 90% cumulative particle size reached. Based on
[0023]
The dispersion coefficient (z) of the existing silica particles similar to the silica particles of the present invention is approximately 43% or more, and the distribution is wider than that of the present invention. Therefore, a relatively large amount of addition is required in order to impart slipperiness between particles. On the other hand, the fine silica particles of the present invention are concentrated in the vicinity of the median diameter, and the particle size is much more uniform than conventional products. There is an advantage that an effect is obtained.
[0024]
The fine silica particles of the present invention are particles that can be easily monodispersed. As described above, the fine silica particles of the present invention have a median diameter smaller than that of conventional silica particles, and the particle size distribution is concentrated around the median diameter, and the particle size is remarkably uniform. It is suitable as a silica filler used for improving the properties and burr resistance. Incidentally, those having a particle size smaller than the above range and having a large specific surface area have reduced compound fluidity, while those having a particle size larger than the above range and having a small specific surface area have reduced burr resistance.
[0025]
Furthermore, the silica fine particles of the present invention are almost complete amorphous particles and have a particle shape close to a true sphere. Therefore, it exhibits an excellent effect as a filling material for semiconductor resin compounds. In addition, as shown in comparison with FIG. 1, the conventional silica particles commercially available as a filler or the like have their particle size distribution peak shifted to the 1 μm side from the silica particles of the present invention, and the silica particles of the present invention. The particle size is larger than.
[0026]
The fine silica particles of the present invention are also suitable as an anti-blocking filler for plastic films or sheets. Anti-blocking fillers are used for the purpose of preventing blocking by forming fine irregularities on the surface of films and sheets. The particle size distribution is larger than that of wear-resistant or scratch-resistant fillers and has a particle size distribution of 1 μm or less. However, sharp particles are required. In addition, the anti-blocking filler must be chemically stable so as not to be detached from the plastic film or sheet, and does not generate gas during production or molding, and has high affinity with the resin. It is done. The fine silica particles of the present invention are suitable as this antiblocking filler.
[0027]
As described above, the fine silica particles of the present invention have a controlled specific surface area or median diameter, and have high purity. Therefore, the fine silica particles are also suitable as an external additive or an internal additive for an electrophotographic toner.
[0028]
Since the silica particles of the present invention use a gaseous silicon compound (silicon tetrachloride gas or the like) as a raw material, it is easy to remove impurities by distillation, and it is possible to obtain high-purity silica particles with low uranium content and the like. it can. Specifically, silica fine particles having a uranium content of 0.5 ppb or less, an aluminum and iron content of 500 ppm or less, a calcium content of 50 ppm or less, and a sodium, manganese, chromium and phosphorus content of 10 ppm or less, respectively. Can do. Moreover, since the adsorbed impurities are removed and reduced by the heat treatment when collecting the silica fine particles produced by flame hydrolysis, high-purity silica fine particles can be obtained. The semiconductor memory is required to have as little uranium content as possible in order to prevent soft errors due to α rays contained in the material. Therefore, the high-purity silica fine particles of the present invention are preferable also from this point.
[0029]
【Example】
Hereinafter, the present invention will be described specifically by way of examples.
[0030]
[Example 1]
As shown in FIG. 1, an
Manufacturing process <br/> Open the support gas supply pipe to supply oxygen gas to the burner, ignite the ignition burner (not shown), open the combustible gas supply pipe and supply hydrogen gas to the burner A flame is formed and silicon tetrachloride is gasified and supplied to the
[0031]
[Table 1]
[0032]
As shown in Table 1 and FIG. 2, the silica particles No. 1 to 6 have a specific surface area of 13.2 to 30.0 m 2 / g, an average particle diameter (median diameter) of 0.195 to 0.37 μm, and a distribution coefficient of 31. ˜35%, and both are included in the scope of the present invention. On the other hand, although the existing silica particles have a specific surface area and median diameter within the scope of the present invention, the dispersion coefficient is larger than that of the silica particles of the present invention, and the peak of the particle size distribution is larger than that of the silica particles of the present invention.
[0033]
3 and 4 show the relationship between the specific surface area (S) and the median diameter (r) with respect to the product of the silica concentration (v) in the flame and the residence time (t) for the silica particles No. 1-6. From this result, it can be seen that the product of silica concentration (v) and residence time (t) in the flame is in the relationship of the following formulas [I] and [II] with respect to the specific surface area (S) and the median diameter (r). It was issued.
S = 3.52 (v · t) -0.4 …… [I]
r = 1.07 (v · t) 0.4 …… [II]
[0034]
[Example 2]
A test component was prepared by adding a filler obtained by adding the silica powder (No. 1 to 6) of Example 1 to the resin component having the composition shown in Table 2 in which a phenol novolac type curing agent was added to a biphenyl type epoxy resin. A bounce was prepared. The compound was kneaded for 5 minutes with a heated mixing roll mill (two rolls), and its spiral flow and burr length were measured. The results are shown in Table 3. The silica filler was prepared so that the weight ratio in the total filler was 5% and 10% with respect to the standard filler, and the silica filler filling rate in the compound was 88.0% by weight. As the standard filler, spherical silica particles having an average particle size of 22.4 μm and a specific surface area of 2.3 m 2 / g were used. The measurement was performed by injecting each sample into each measurement mold at a heating temperature of 180 ° C., an injection pressure of 70 kg / cm 2 G for 100 seconds using an injection tester, and measuring the spiral flow and the length of burrs. As is clear from the comparison with the comparison standard, the spiral flow and the burr length are all reduced in the case of adding the silica particles of the present invention, and this effect is generally proportional to the addition amount.
[0035]
[Table 2]
[0036]
[Table 3]
[0037]
【The invention's effect】
According to the production method of the present invention, a sharp particle size distribution having an average particle diameter (median diameter) of 0.1 to 0.7 μm, a specific surface area of 5 to 30 m 2 / g, and a dispersion coefficient (z) of 40% or less. Silica fine particles having the following can be obtained. The silica fine particles have a particle shape close to a true sphere, and the particle size is remarkably uniform. Therefore, it is suitable as a resin-filling material for semiconductors or as an anti-blocking filler for plastic films or sheets.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a production apparatus for carrying out the production method of the present invention. FIG. 2 is a graph showing the particle size distribution of silica fine particles of the present invention and existing products. FIG. 3 is a relationship between specific surface areas of silica particles according to the present invention. A graph showing a formula [FIG. 4] A graph showing a relational expression of median diameters of silica particles according to the present invention [Explanation of symbols]
1-evaporator, 2-source
Claims (4)
S=3.52(v・t)-0.4 …[I]
r=1.07(v・t)0.4 …[II]The specific surface area (S) of the silica particles, the median diameter (r), the silica concentration in the flame (v), and the residence time (t) of the silica particles in the flame are controlled according to the following formula [I] or [II]. The manufacturing method of Claim 1, 2, or 3.
S = 3.52 (v · t) −0.4 ... [I]
r = 1.07 (v · t) 0.4 ... [II]
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000184160A JP4789080B2 (en) | 2000-06-20 | 2000-06-20 | Method for producing amorphous fine silica particles |
| DE60133416T DE60133416T2 (en) | 2000-06-20 | 2001-06-20 | AMORPHIC FINE PARTICLES FROM SILICON DIOXIDE, PROCESS FOR THEIR PREPARATION AND USE. |
| US10/049,902 US7083770B2 (en) | 2000-06-20 | 2001-06-20 | Amorphous, fine silica particles, and method for their production and their use |
| EP01941114A EP1361195B1 (en) | 2000-06-20 | 2001-06-20 | Amorphous, fine silica particles, and method for their production and their use |
| PCT/JP2001/005252 WO2001098211A1 (en) | 2000-06-20 | 2001-06-20 | Amorphous, fine silica particles, and method for their production and their use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000184160A JP4789080B2 (en) | 2000-06-20 | 2000-06-20 | Method for producing amorphous fine silica particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002003213A JP2002003213A (en) | 2002-01-09 |
| JP4789080B2 true JP4789080B2 (en) | 2011-10-05 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| JP2000184160A Expired - Lifetime JP4789080B2 (en) | 2000-06-20 | 2000-06-20 | Method for producing amorphous fine silica particles |
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2000
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Cited By (1)
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|---|---|---|---|---|
| KR101485612B1 (en) | 2008-04-25 | 2015-01-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | A protective film for semi-conductor wafer |
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| JP2002003213A (en) | 2002-01-09 |
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