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JP4797708B2 - Electroless nickel plating method - Google Patents
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JP4797708B2 - Electroless nickel plating method - Google Patents

Electroless nickel plating method Download PDF

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JP4797708B2
JP4797708B2 JP2006061087A JP2006061087A JP4797708B2 JP 4797708 B2 JP4797708 B2 JP 4797708B2 JP 2006061087 A JP2006061087 A JP 2006061087A JP 2006061087 A JP2006061087 A JP 2006061087A JP 4797708 B2 JP4797708 B2 JP 4797708B2
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plating
electroless nickel
nickel plating
potential
film
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JP2007238993A (en
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典久 今泉
宣正 半田
祐紀 眞田
延洋 川合
光治 枝川
直人 藤崎
健次 石上
重成 留田
孝志 東門
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Japan Kanigen Co Ltd
Denso Corp
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Denso Corp
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Description

本発明は、ヒドラジンを還元剤として用いた無電解ニッケルめっき方法に関する。   The present invention relates to an electroless nickel plating method using hydrazine as a reducing agent.

従来より、一般に、無電解ニッケルめっき浴は、ニッケルイオンを供給するためのニッケル金属塩と還元剤としてのジアリン酸ナトリウム、ホウ素ナトリウム、ヒドラジンとが用いられている。ここで、ヒドラジンを還元剤とするめっき浴は、主に磁性薄膜として利用されている。   Conventionally, in general, an electroless nickel plating bath uses a nickel metal salt for supplying nickel ions and sodium diphosphate, sodium boron, and hydrazine as reducing agents. Here, the plating bath using hydrazine as a reducing agent is mainly used as a magnetic thin film.

近年、ヒドラジンを還元剤とする無電解ニッケルめっき方法により得られる皮膜特性が見直されている。たとえば、非特許文献1では、ニッケルイオン、還元剤としてのヒドラジンのみよりなる無電解ニッケルめっきを提案している。   In recent years, film characteristics obtained by an electroless nickel plating method using hydrazine as a reducing agent have been reviewed. For example, Non-Patent Document 1 proposes electroless nickel plating made only of nickel ions and hydrazine as a reducing agent.

また、特許文献1では、ニッケルイオン、ヒドラジン、およびグリシン若しくはその誘導体を含有し、リン酸または炭酸緩衝剤を含まない針状被膜形成用の無電解ニッケルめっき浴を提案している。
表面技術,vol.51,No.10,2000,P.1035 特許第3554741号公報
Patent Document 1 proposes an electroless nickel plating bath for forming a needle-like film that contains nickel ions, hydrazine, and glycine or a derivative thereof and does not contain phosphoric acid or a carbonate buffer.
Surface technology, vol. 51, no. 10, 2000, p. 1035 Japanese Patent No. 3554741

しかしながら、上記非特許文献1に記載のものでは、めっき速度が遅く、また、上記特許文献1に記載のものでは、緩衝剤としてホウ酸等を添加することでPHを高く維持するようにしているものの、本発明者の検討によれば、やはり、めっき速度が遅いという問題は解消されていない。   However, in the thing of the said nonpatent literature 1, the plating rate is slow, and in the thing of the said patent document 1, it is trying to maintain PH high by adding boric acid etc. as a buffering agent. However, according to the study of the present inventor, the problem that the plating speed is slow has not been solved.

本発明は、上記問題に鑑みてなされたものであり、ヒドラジンを還元剤として用いた無電解ニッケルめっき方法において、めっき速度を向上させることを目的とする。   The present invention has been made in view of the above problems, and an object thereof is to improve the plating rate in an electroless nickel plating method using hydrazine as a reducing agent.

上記目的を達成するため、本発明は、ニッケルイオンと還元材としてのヒドラジンとを含有し、PHを弱塩基性領域としたリンを含まない無電解ニッケルめっき液を使用し、めっき浴中において、被めっき物にめっき浴固有の混生電位のマイナス電位を付加することにより、前記被めっき物に無電解ニッケルめっき皮膜を形成し、前記マイナス電位の付加では、75〜250mVのマイナス電位を10〜180秒付加することを特徴とする。
In order to achieve the above object, the present invention uses an electroless nickel plating solution that contains nickel ions and hydrazine as a reducing material and does not contain phosphorus with PH as a weakly basic region. An electroless nickel plating film is formed on the object to be plated by applying a minus potential of the mixed potential specific to the plating bath to the object to be plated. When the minus potential is applied , a minus potential of 75 to 250 mV is applied to 10 to 180. It is characterized by adding seconds .

それによれば、めっき浴固有の混生電位のマイナス電位を付加することにより、被めっき物を、すばやく混生電位にすることができるので、めっき速度を向上させることができる。   According to this, by adding a minus potential of the mixed potential unique to the plating bath, the object to be plated can be quickly brought to the mixed potential, so that the plating rate can be improved.

また、無電解ニッケルめっき液には、ニッケルイオンとヒドラジン以外に、その他の錯化剤や緩衝剤など、つまり、無電解ニッケルめっき皮膜の表面状態を制御するための添加剤を入れなくても、PHやニッケルイオン濃度、ヒドラジン濃度、浴温度などを調整することで、無電解ニッケルめっき皮膜の表面状態を制御できるが、上記添加剤を入れた場合であっても、本めっき方法の効果は十分に発揮できる。   In addition to nickel ions and hydrazine, the electroless nickel plating solution contains other complexing agents and buffering agents, that is, without adding an additive for controlling the surface state of the electroless nickel plating film. Although the surface state of the electroless nickel plating film can be controlled by adjusting the pH, nickel ion concentration, hydrazine concentration, bath temperature, etc., the effect of this plating method is sufficient even when the above additives are added. Can demonstrate.

以下、本発明の実施形態について図に基づいて説明する。図1は、本実施形態に係る無電解ニッケルめっき皮膜10の模式的な断面構造を示す図であり、図2は、この無電解ニッケルめっき皮膜10の表面状態をSEM観察により得られた写真に基づいて模式的に表した図である。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic cross-sectional structure of an electroless nickel plating film 10 according to the present embodiment. FIG. 2 is a photograph obtained by SEM observation of the surface state of the electroless nickel plating film 10. It is the figure typically expressed based on.

被めっき物20の表面に、無電解ニッケルめっき皮膜10が形成されている。ここでは、無電解ニッケルめっき皮膜10の表面は、多数の針状の突起からなるもので、このような皮膜状態は、上記特許文献1にも示されている。   An electroless nickel plating film 10 is formed on the surface of the workpiece 20. Here, the surface of the electroless nickel plating film 10 is composed of a large number of needle-like protrusions, and such a film state is also shown in Patent Document 1 described above.

このように、表面が針状突起からなる皮膜となり、表面が粗化された状態となるものであり、その程度は、数nmの表面凹凸が測定可能な原子間力顕微鏡を用いて求められる比表面積Saによって表される。具体的に、本実施形態の無電解ニッケルめっき皮膜10の比表面積Saは、1.1〜3.8程度にすることができる。   Thus, the surface becomes a film made of acicular protrusions, and the surface becomes roughened, and the degree is a ratio obtained using an atomic force microscope capable of measuring surface irregularities of several nm. It is represented by the surface area Sa. Specifically, the specific surface area Sa of the electroless nickel plating film 10 of the present embodiment can be about 1.1 to 3.8.

このような無電解ニッケルめっき皮膜10は、次にのべるような、本実施形態に係る無電解ニッケルめっき方法によって形成される。その方法について述べることとする。   Such an electroless nickel plating film 10 is formed by the electroless nickel plating method according to this embodiment as described below. The method will be described.

図3は、本めっき方法を行うためのめっき浴100の模式的構成を示す図である。また、図4は、本めっき方法による無電解ニッケルめっき皮膜10の生成メカニズムを模式的に示す図である。   FIG. 3 is a diagram showing a schematic configuration of a plating bath 100 for performing the present plating method. Moreover, FIG. 4 is a figure which shows typically the production | generation mechanism of the electroless nickel plating film 10 by this plating method.

図3において、本実施形態のめっき方法におけるめっき浴100は、ニッケルイオンと還元材としてのヒドラジンとを含有し、PHを弱塩基性領域とした無電解ニッケルめっき液を使用する。   In FIG. 3, the plating bath 100 in the plating method of the present embodiment uses an electroless nickel plating solution containing nickel ions and hydrazine as a reducing material and having PH as a weakly basic region.

ニッケルイオンは、特に限定するものではないが、脂肪族ヒドロキシカルボン酸塩などを用いて供給される。具体的には、酢酸ニッケルを採用する場合、その酢酸ニッケル濃度は、10〜30g/リットル程度とする。また、ヒドラジン濃度は、5〜30g/リットル程度とする。浴温は70〜90℃程度とし、PHは7.5〜9.0の範囲の弱塩基性とする。   Although nickel ion is not specifically limited, it is supplied using aliphatic hydroxycarboxylate. Specifically, when nickel acetate is employed, the nickel acetate concentration is about 10 to 30 g / liter. The hydrazine concentration is about 5 to 30 g / liter. The bath temperature is about 70 to 90 ° C., and the pH is weakly basic in the range of 7.5 to 9.0.

このような組成、温度、PHの条件に調整されためっき浴100においては、浴温と混生電位との関係は、図5に示されるようなものとなる。この混生電位とは、めっき浴固有のものであり、この混生電位以下になると、めっき浴において被めっき物に皮膜が析出するものである。図5に示されるように、本めっき浴100では、混生電位となるまでに時間がかかる。   In the plating bath 100 adjusted to such conditions of composition, temperature, and PH, the relationship between the bath temperature and the mixed potential is as shown in FIG. This mixed potential is unique to the plating bath. When the mixed potential is lower than this mixed potential, a film is deposited on the object to be plated in the plating bath. As shown in FIG. 5, in the present plating bath 100, it takes time to reach a mixed potential.

そこで、このような条件に調整されためっき浴100中において、本実施形態では、被めっき物20にめっき浴100固有の混生電位のマイナス電位を付加することにより、めっき速度を向上させて、被めっき物20に無電解ニッケルめっき皮膜10を形成する。   Therefore, in the plating bath 100 adjusted to such conditions, in this embodiment, by adding a minus potential of the mixed potential inherent to the plating bath 100 to the object 20 to be plated, the plating rate is improved, An electroless nickel plating film 10 is formed on the plated object 20.

本めっき方法では、用いられるめっき浴100の混生電位を測定しておき、被めっき物20の電位をモニターしながら、その混生電位のマイナス電位となるように、極板30および整流器40を用いて、被めっき物20に通電する。   In this plating method, the mixed potential of the plating bath 100 to be used is measured, and while monitoring the potential of the object 20 to be plated, the electrode plate 30 and the rectifier 40 are used so that the mixed potential becomes a negative potential. The current to be plated 20 is energized.

この混生電位のマイナス電位を付加したときの被めっき物20の電位の時間変化を図6に示す。図6に示されるように、50℃程度の低温であっても、上記マイナス電位を付加することにより、被めっき物20をすばやく混生電位にすることができるため、めっき速度を大幅に向上できる。   FIG. 6 shows the time change of the potential of the workpiece 20 when a negative potential of this mixed potential is added. As shown in FIG. 6, even if the temperature is as low as about 50 ° C., by adding the negative potential, the object to be plated 20 can be quickly brought to the mixed potential, so that the plating speed can be greatly improved.

なお、このマイナス電位の付加は、被めっき物20の材質を問わず、めっき液に合わせた電位量の設定により可能となる。また、このように通電により電位を付加するため、被めっき物20としては、金属であっても非金属であってもよく、セラミック、プラスチックなどでもよい。   This negative potential can be applied by setting the potential amount according to the plating solution regardless of the material of the workpiece 20. Further, in order to apply a potential by energization in this way, the object to be plated 20 may be a metal or a nonmetal, and may be ceramic, plastic, or the like.

なお、通電する方法以外にも、被めっき物20が金属の場合、異種金属を被めっき物20に接触させることにより、被めっき物20に上記マイナス電位を付加することも可能である。   In addition to the method of energizing, when the object to be plated 20 is a metal, the negative potential can be applied to the object to be plated 20 by bringing the dissimilar metal into contact with the object to be plated 20.

さらに言うならば、上記マイナス電位を付加することにより、被めっき物20の表面の局部電位に頼らない強制的な電位が得られるため、めっきに必要な電位が被めっき物20の表面全体に付加され、図4(a)に示されるように、めっきの析出核10aが均等に全面に形成できる。   In other words, by applying the negative potential, a compulsory potential that does not depend on the local potential on the surface of the object to be plated 20 can be obtained, so that the potential necessary for plating is applied to the entire surface of the object to be plated 20. Then, as shown in FIG. 4A, the plating nuclei 10a can be uniformly formed on the entire surface.

そのため、めっき析出の初期速度を上げ、めっき析出を大幅に改善できる。また、核10aは均等であり、そこからの析出によって、どの面においても、皮膜生成が一様な状態を容易に得ることができる。   Therefore, the initial rate of plating deposition can be increased and plating deposition can be greatly improved. Further, the nuclei 10a are uniform, and precipitation from the nuclei 10a can easily obtain a state in which the film formation is uniform on any surface.

このようにして、めっき皮膜10の析出が始まり、図4(b)、(c)に示されるように、粗化された無電解ニッケルめっき皮膜10が形成される。本めっき方法においては、無電解ニッケルめっき皮膜10の表面が粗化状態となる主要件は、還元剤であるヒドラジンに求められる。   In this manner, the plating film 10 starts to be deposited, and a roughened electroless nickel plating film 10 is formed as shown in FIGS. In this plating method, the main matter that the surface of the electroless nickel plating film 10 is roughened is required for hydrazine as a reducing agent.

ヒドラジンの還元力は、従来の無電解ニッケル−リンめっきの還元剤であるジアリン酸ナトリウムと比べて、還元力が弱い。そのため、図4(b)、(c)に示されるように、めっきの核10aとなる部位の先端のみの還元力が有効に働き、めっきの成長がめっき面に対して垂直方向に成長する。   The reducing power of hydrazine is weaker than that of sodium diphosphate, which is a reducing agent for conventional electroless nickel-phosphorous plating. Therefore, as shown in FIGS. 4B and 4C, the reducing force only at the tip of the portion serving as the plating nucleus 10a works effectively, and the growth of the plating grows in the direction perpendicular to the plating surface.

還元力の弱いめっき浴における皮膜生成の過程は、被めっき物20の表面の局部電位に、めっきの核10aを求め、この核10aの連続性で山脈・骨格を形成し、垂直方向へと成長を優先し、山脈の谷部も時間経過で補完するものである。こうして、皮膜10の表面を構成する針状突起がめっき時間の経過とともに成長していき、粗化状態となる。この様子はSEM観察で確認している。   The film formation process in the plating bath having a weak reducing power is obtained by obtaining a plating nucleus 10a at the local potential of the surface of the object 20 to be plated, forming a mountain range / skeleton by the continuity of the nucleus 10a, and growing in the vertical direction. Priority is given to the valley of the mountain range. Thus, the needle-like protrusions constituting the surface of the film 10 grow with the lapse of the plating time, and become roughened. This state is confirmed by SEM observation.

また、還元剤としてヒドラジンを用いているが、ヒドラジンは分解しやすいため、めっき浴100の安定性に考慮する必要がある。本実施形態のめっき方法では、めっき浴100のPHを測定し、このPHからヒドラジン濃度をモニターしてヒドラジンを自動補給する自動分析自動補給装置を採用すれば、めっき浴100の不安定を解消できる。   Moreover, although hydrazine is used as the reducing agent, hydrazine is easily decomposed, so it is necessary to consider the stability of the plating bath 100. In the plating method of this embodiment, the instability of the plating bath 100 can be eliminated by adopting an automatic analysis automatic replenishment device that measures the pH of the plating bath 100 and monitors the hydrazine concentration from this PH to automatically replenish hydrazine. .

このような本めっき方法において、マイナス付加電位は75〜250mVの範囲で、マイナス付加電位時間は10〜180秒の範囲で、めっき時間は10〜180分の範囲で行うことができ、それにより得られる無電解ニッケルめっき皮膜10の厚さは、0.4〜2μm程度である。   In such a plating method, the negative additional potential is in the range of 75 to 250 mV, the negative additional potential time is in the range of 10 to 180 seconds, and the plating time is in the range of 10 to 180 minutes. The thickness of the electroless nickel plating film 10 is about 0.4 to 2 μm.

このように、本実施形態の無電解ニッケルめっき方法によれば、めっき浴100固有の混生電位のマイナス電位を付加することで、被めっき物20を、すばやく混生電位にできるので、めっき速度を向上させることができる。   As described above, according to the electroless nickel plating method of the present embodiment, by adding the minus potential of the mixed potential unique to the plating bath 100, the object to be plated 20 can be quickly brought to the mixed potential, thereby improving the plating speed. Can be made.

また、無電解ニッケルめっき液には、ニッケルイオンとヒドラジン以外に、その他の錯化剤や緩衝剤など、つまり、無電解ニッケルめっき皮膜10の表面状態を制御するための添加剤を入れなくても、PHやニッケルイオン濃度、ヒドラジン濃度、浴温度などを調整することで、当該めっき皮膜10の表面状態を制御できる。   Further, in addition to nickel ions and hydrazine, the electroless nickel plating solution does not need to contain other complexing agents and buffering agents, that is, additives for controlling the surface state of the electroless nickel plating film 10. The surface state of the plating film 10 can be controlled by adjusting PH, nickel ion concentration, hydrazine concentration, bath temperature, and the like.

ただし、本めっき方法によれば、上記添加剤を入れた場合であっても、本めっき方法の効果は十分に発揮でき、皮膜10の表面凹凸をコントロール可能である。たとえば、クエン酸を微量添加しても、めっき速度を大幅に低下させることなく、所望の表面凹凸を皮膜形成可能である。ここで、本発明者は、クエン酸を微量添加しためっき浴100において、マイナス電位を付加しない状態では、めっきが析出しないことをSEM観察により確認している。   However, according to the present plating method, even when the additive is added, the effect of the present plating method can be sufficiently exerted, and the surface unevenness of the film 10 can be controlled. For example, even if a small amount of citric acid is added, a desired surface unevenness can be formed without significantly reducing the plating rate. Here, the present inventor has confirmed by SEM observation that plating does not precipitate in a plating bath 100 to which a small amount of citric acid is added without applying a negative potential.

次に、本発明を以下の各実施例によって、より具体的に述べることとするが、本発明はこれら実施例に限定されるものではない。   Next, the present invention will be described more specifically by the following examples, but the present invention is not limited to these examples.

上述したように、PHやニッケルイオン濃度、ヒドラジン濃度、浴温度などを調整することで、無電解ニッケルめっき皮膜の表面状態を制御できることから、皮膜の表面凹凸をコントロールして作製したときの当該皮膜の比表面積Saに対する樹脂密着強度を調査した。   As mentioned above, the surface state of the electroless nickel plating film can be controlled by adjusting the pH, nickel ion concentration, hydrazine concentration, bath temperature, etc. The adhesion strength of the resin to the specific surface area Sa was investigated.

図7は、皮膜の比表面積Saと、当該皮膜を樹脂で封止したときの当該樹脂の密着力(単位:MPa)との関係を示す図である。ここで、比表面積Saは数nmの表面凹凸が測定可能な原子間力顕微鏡を用いて測定している。   FIG. 7 is a diagram showing the relationship between the specific surface area Sa of the film and the adhesive force (unit: MPa) of the resin when the film is sealed with resin. Here, the specific surface area Sa is measured using an atomic force microscope capable of measuring surface irregularities of several nm.

図7に示されるように、比表面積Saが大きくなるに従い、樹脂密着強度は向上している。このように、上記実施形態に示しためっき方法を採用することで、無電解ニッケルめっき皮膜が、微細な粗化めっき面を形成したものとなり、その比表面積を1.1〜3.8まで制御可能とすることができた。   As shown in FIG. 7, the resin adhesion strength is improved as the specific surface area Sa is increased. Thus, by employing the plating method shown in the above embodiment, the electroless nickel plating film has a fine roughened plating surface, and the specific surface area is controlled from 1.1 to 3.8. Could be possible.

このように、比表面積Saが大きくなると、アンカー効果による樹脂密着強度の向上が期待される。また、比表面積Saが大きくなると、毛細管現象によるはんだ濡れ性の向上が見込まれるため、濡れ性の悪いPbフリーはんだが設けられる部位に対して、本めっき方法は有効である。   Thus, when specific surface area Sa becomes large, the improvement of the resin adhesive strength by an anchor effect is anticipated. Further, when the specific surface area Sa is increased, the solder wettability is expected to be improved by the capillary phenomenon. Therefore, the present plating method is effective for the portion where the Pb-free solder having poor wettability is provided.

なお、比表面積Saが大きすぎると、はんだが所望の領域を超えて濡れ過ぎたり、部品接続に導電性接着剤を用いた時の毛細管現象によるブリードアウトや表面凹凸大によるワイヤボンド性の阻害といった問題がある。したがって、適用する半導体装置の構成などにより、適宜必要な比表面積Saとなるめっき皮膜形成条件を用いればよい。   If the specific surface area Sa is too large, the solder may get too wet beyond the desired region, or the wire bondability may be hindered due to bleed-out due to capillary phenomenon when a conductive adhesive is used for connecting the components, or due to large surface irregularities. There's a problem. Therefore, a plating film forming condition with a necessary specific surface area Sa may be used depending on the configuration of the semiconductor device to be applied.

銅合金よりなる被めっき物を用い、めっき浴として、酢酸ニッケル濃度:18g/リットル(0.07mol/リットル)、ヒドラジン濃度:13.5g/リットル(0.27mol/リットル)、浴温:80℃、PH:8.5とし、マイナス電位の付加は、−100mV×60秒で、無電解ニッケルめっきを行ったところ、20分のめっき時間で厚さ2.0μmの無電解ニッケルめっき皮膜が形成された。   Using an object to be plated made of a copper alloy, as a plating bath, nickel acetate concentration: 18 g / liter (0.07 mol / liter), hydrazine concentration: 13.5 g / liter (0.27 mol / liter), bath temperature: 80 ° C. , PH: 8.5, negative potential applied is −100 mV × 60 seconds, and electroless nickel plating was performed, and an electroless nickel plating film having a thickness of 2.0 μm was formed in a plating time of 20 minutes. It was.

(比較例1)
銅合金よりなる被めっき物を用い、めっき浴として、塩化ニッケル濃度:0.05mol/リットル、ヒドラジン濃度:0.4mol/リットル、グリシン:0.3mol/リットル、ホウ酸:0.3mol/リットル、浴温:85℃、PH:12として、無電解ニッケルめっきを行ったところ、20分で厚さ0.68μmの無電解ニッケルめっき皮膜が形成された。
(Comparative Example 1)
Using an object to be plated made of a copper alloy, as a plating bath, nickel chloride concentration: 0.05 mol / liter, hydrazine concentration: 0.4 mol / liter, glycine: 0.3 mol / liter, boric acid: 0.3 mol / liter, When electroless nickel plating was performed at a bath temperature of 85 ° C. and a pH of 12, an electroless nickel plating film having a thickness of 0.68 μm was formed in 20 minutes.

(比較例2)
銅合金よりなる被めっき物を用い、めっき浴として、酢酸ニッケル濃度:18g/リットル(0.07mol/リットル)、ヒドラジン濃度:13.5g/リットル(0.27mol/リットル)、浴温:85℃、PH:8.5として、無電解ニッケルめっきを行ったところ、20分で厚さ00.56μmの無電解ニッケルめっき皮膜が形成された。
(Comparative Example 2)
Using an object to be plated made of a copper alloy, as a plating bath, nickel acetate concentration: 18 g / liter (0.07 mol / liter), hydrazine concentration: 13.5 g / liter (0.27 mol / liter), bath temperature: 85 ° C. When electroless nickel plating was performed at pH 8.5, an electroless nickel plating film having a thickness of 0.556 μm was formed in 20 minutes.

このように、これら比較例1、2に対して、本実施例2によるめっき方法では、めっき速度を大幅に向上させることができた。   Thus, compared with these comparative examples 1 and 2, with the plating method according to the present Example 2, the plating rate could be significantly improved.

銅合金よりなる被めっき物を用い、めっき浴として、酢酸ニッケル濃度:18g/リットル、ヒドラジン濃度:13.5g/リットル、クエン酸濃度:1g/リットル、浴温:80℃、PH:8.3とし、マイナス電位の付加は、−100mV×60秒で、無電解ニッケルめっきを行ったところ、18分のめっき時間で厚さ1.5μmの無電解ニッケルめっき皮膜が形成された。   Using an object to be plated made of a copper alloy, as a plating bath, nickel acetate concentration: 18 g / liter, hydrazine concentration: 13.5 g / liter, citric acid concentration: 1 g / liter, bath temperature: 80 ° C., PH: 8.3 When the electroless nickel plating was performed at −100 mV × 60 seconds with a negative potential applied, an electroless nickel plating film having a thickness of 1.5 μm was formed in a plating time of 18 minutes.

本発明の実施形態に係る無電解ニッケルめっき皮膜の模式的な断面構造を示す図である。It is a figure which shows the typical cross-section of the electroless nickel plating film | membrane which concerns on embodiment of this invention. 上記実施形態の無電解ニッケルめっき皮膜の表面状態を模式的に表した図である。It is the figure which represented typically the surface state of the electroless nickel plating membrane | film | coat of the said embodiment. 上記実施形態に係る無電解ニッケルめっき方法を行うためのめっき浴の模式的構成を示す図である。It is a figure which shows the typical structure of the plating bath for performing the electroless nickel plating method which concerns on the said embodiment. 上記実施形態に係る無電解ニッケルめっきによる皮膜の生成メカニズムを模式的に示す図である。It is a figure which shows typically the production | generation mechanism of the membrane | film | coat by the electroless nickel plating which concerns on the said embodiment. 上記実施形態に係る無電解ニッケルめっき方法のめっき浴における浴温と混生電位との関係を示す図である。It is a figure which shows the relationship between the bath temperature and mixed potential in the plating bath of the electroless nickel plating method which concerns on the said embodiment. 混生電位のマイナス電位を付加したときの被めっき物の電位の時間変化を示す図である。It is a figure which shows the time change of the electric potential of a to-be-plated object when the minus electric potential of mixed potential is added. 無電解ニッケルめっき皮膜の比表面積Saと樹脂密着力との関係を示す図である。It is a figure which shows the relationship between the specific surface area Sa of an electroless nickel plating film | membrane, and resin adhesive force.

符号の説明Explanation of symbols

10…無電解ニッケルめっき皮膜、20…被めっき物、100…めっき浴。   DESCRIPTION OF SYMBOLS 10 ... Electroless nickel plating film | membrane, 20 ... To-be-plated object, 100 ... Plating bath.

Claims (2)

ニッケルイオンと還元材としてのヒドラジンとを含有し、PHを弱塩基性領域としたリンを含まない無電解ニッケルめっき液を使用し、
めっき浴中において、被めっき物にめっき浴固有の混生電位のマイナス電位を付加することにより、前記被めっき物に無電解ニッケルめっき皮膜を形成し、
前記マイナス電位の付加では、75〜250mVのマイナス電位を10〜180秒付加することを特徴とする無電解ニッケルめっき方法。
Using an electroless nickel plating solution that contains nickel ions and hydrazine as a reducing material and does not contain phosphorus with PH as a weakly basic region,
In the plating bath, an electroless nickel plating film is formed on the plating object by adding a minus potential of the mixed potential inherent to the plating bath to the plating object ,
In the addition of the negative potential, a negative potential of 75 to 250 mV is applied for 10 to 180 seconds .
前記無電解ニッケルめっき液として、さらに前記無電解ニッケルめっき皮膜の表面状態を制御するための添加剤を添加したものを用いることを特徴とする請求項1に記載の無電解ニッケルめっき方法。
2. The electroless nickel plating method according to claim 1, wherein the electroless nickel plating solution is further added with an additive for controlling the surface state of the electroless nickel plating film.
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JPS62250178A (en) * 1986-04-22 1987-10-31 Oki Electric Ind Co Ltd Initial deposition method for electroless plating
JPS63134671A (en) * 1986-11-22 1988-06-07 Kobe Steel Ltd Electroless ni plating method
JPH03135020A (en) * 1989-10-20 1991-06-10 Fuji Electric Co Ltd Plating of semiconductor substrate
JP3554741B2 (en) * 1999-05-20 2004-08-18 有限会社関東学院大学表面工学研究所 Electroless nickel plating bath and method for forming high-purity nickel needle coating using the same
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