JP4813692B2 - Method for manufacturing hermetically sealed IC package - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a hermetically sealed IC package.
[0002]
[Prior art]
As shown in the drawing, the conventional hermetically sealed IC package has an IC chip 45 placed on a piece of substrate 41 having a frame 47, a wire 46, and a plate-like lid 49 placed on the frame 47. .
[0003]
[Problems to be solved by the invention]
Conventional hermetic sealing IC packages are manufactured individually and individually, so the productivity is remarkably low, and therefore they are very expensive.
[0004]
[Means for Solving the Problems]
In order to solve the above problems, the present invention uses a substrate on which a plurality of IC chips can be mounted, forms a photosensitive material thickly between the IC chips, covers the plate-like lid, and then cuts the substrate. By doing so, one IC package is made.
[0005]
DETAILED DESCRIPTION OF THE INVENTION
The present invention relates to a method for manufacturing a gas-sealed package in which the surface of an IC chip is surrounded by a gas such as air. Embodiments of the present invention will be described below with reference to the drawings.
[0006]
FIG. 1 is a cross-sectional view of an IC package showing the process sequence of the manufacturing method of the present invention.
As shown in FIG. 1A, a substrate 11 having external electrodes 12 and internal electrode wirings 13 is prepared. A large number of IC chips of a plurality are mounted on this substrate, and finally are made into individual pieces. Therefore, the size of the substrate is large, and both the external electrode 12 and the internal electrode wiring 13 have a repeated pattern. Examples of the material of the substrate 11 include ceramic, glass epoxy, polyimide, and glass.
[0007]
Next, as shown in FIG. 1B, the IC chip 15 is bonded to a desired position of the internal electrode wiring. In some cases, the internal electrode wiring 13 may not be provided at the position where the IC chip 15 is bonded. For example, there is a case where the surface of the IC chip needs to be as low as possible, a case where the IC chip does not need to be electrically connected, or a case where it is not necessary to dissipate the IC chip. Next, the electrode on the surface of the IC chip 15 and the internal electrode wiring are connected by a wire 16. Metals such as gold (Au), gold alloy, aluminum (Al), aluminum alloy, copper (Cu), and copper alloy are used as the material of this wire.
Next, a photosensitive material 17 is applied as shown in FIG. Since the photosensitive material 17 is liquid when applied, the IC chip 15 is moved, the IC chip 15 is damaged, the wire 16 is bent, the wire is damaged, and the wire and the electrode wiring and the IC are connected. No damage will be given to the bonding area. Examples of the photosensitive material 17 include negative resist, positive resist, and photosensitive polyimide. In addition, the thickness of the photosensitive material 17 to be applied must be designed to be higher than the highest portion of the wire 16 in the end.
[0008]
Next, as shown in FIG. 1 (d), light is applied using a mask 18 formed so that a part of the IC chip 15 and the wire 16 is exposed. With a negative photosensitive material, the area exposed to light is cured. In the case of the positive type, the place where light is not exposed is cured.
[0009]
Next, as shown in FIG. 1E, by developing, the photosensitive material 17 where the IC chip 15 is located is eliminated, and a thick wall-shaped photosensitive material 17 is formed between the IC chips 15. Is done. By heat-treating this, the photosensitive material 17 is further strengthened. Although the photosensitive material 17 may be reduced by this heat treatment, the photosensitive material 17 must be made higher than the highest point of the wire even if the photosensitive material 17 is reduced and the height is reduced. In addition, since the IC chip 15 is first mounted and the wire 16 is held, the photosensitive material 17 can be brought close to the position of the wire 16 and the internal electrode wiring 13.
[0010]
Next, as shown in FIG. 1 (f), a plate-like lid 19 is bonded. In this case, a method of adhering the lid 19 after adhering an adhesive material on the photosensitive material 17, or an adhesive is applied to the position where the photosensitive material 17 comes to the lid 19 and then adhering the lid 19. Or a method of bonding the photosensitive material 17 and the lid 19 by heat treatment. The plate-like lid 19 is made of a material made of a transparent material such as glass or transparent plastic if it is necessary to transmit light. If it is not necessary to transmit light, a material such as ceramic, glass epoxy or polyimide can be used. Tape-like sheets can also be used depending on the application.
[0011]
Next, as shown in FIG. 1G, the substrate is cut at an intermediate point of the photosensitive material 17. As this cutting method, there are a method using a dicing device, a method using a wire saw, and a method using a laser or high-pressure water. Further, when dicing is performed, a method of preventing cracks from occurring on the cut surface by first cutting shallowly with a relatively wide blade and then cutting with a narrow blade can be used.
[0012]
In this way, as shown in FIG. 1H, an IC package in which the IC chip 15 is sealed with gas is obtained.
As a method for measuring the electrical characteristics of an IC package, it is of course possible to measure after a single package as in the prior art. In addition, the measurement can be performed before the substrate is cut in FIG. That is, a probe card can be prepared in accordance with the electrodes on the substrate, and measurement can be performed by the same method as that for wafer measurement. Therefore, it is possible to measure a large number of IC packages with a single probing.
[0013]
FIG. 2 shows a plan view of FIG. A large number of IC chips 25 are mounted in the substrate 21. The IC chip 25 and the wire 26 are exposed. A photosensitive material 27 is formed in a wall shape between the IC chips. Since the photolithography method is used, the photosensitive material is patterned with high accuracy.
[0014]
FIG. 3 shows a plan view of FIG. Cut at the position indicated by the dotted line. The photosensitive material 37 is cut at a substantially intermediate position.
[0015]
【The invention's effect】
As described above, since a large number of IC packages are formed on the substrate at a time and finally cut into one IC package, productivity is greatly improved and manufacturing costs are greatly reduced. In addition, since the electrical characteristics can be measured when a single substrate is formed before cutting, the electrical characteristics of a large number of ICs can be measured at the same time with the same idea as a wafer prober, greatly increasing the cost of testing. Can be reduced.
[Brief description of the drawings]
FIG. 1 is a diagram showing a method of manufacturing an IC package according to the present invention.
FIG. 2 is a plan view of FIG. 1 (e).
FIG. 3 is a diagram showing a plan view of FIG.
FIG. 4 is a view showing a conventional IC package.
[Explanation of symbols]
11, 21, 31, 41 Semiconductor substrate 12, 42 External electrode 13, 23, 33, 43 Internal electrode wiring 15, 25, 35, 45 IC chip 16, 26, 36, 46 Wire 17, 27, 37 Photosensitive material 18 Mask 19, 49 lid 47 frame

Claims (9)

A mounting connecting step to a substrate having an external electrode and the internal electrode wirings put a plurality of IC chips for connecting the electrode and the inner electrode wiring in the IC chip by wire,
A step of applying a photosensitive substance after the mounting connection step ;
Forming a wall-like photosensitive material between the IC chip using a photolithographic method,
Adhering a plate-like lid on top of the wall-like photosensitive material ;
Cutting the plate-like lid, the substrate and the photosensitive material at an intermediate position between the IC chips of the photosensitive material in plan view ;
Method of manufacturing a sealed IC package willing to, characterized in that it consists of. 2. The hermetic sealing according to claim 1 , further comprising a step of curing the photosensitive material by performing a heat treatment between the step of forming the photosensitive material and the step of bonding the plate-like lid. IC package manufacturing method . 3. The method of manufacturing an airtightly sealed IC package according to claim 1, wherein the substrate having the external electrode and the internal electrode wiring is a glass epoxy material . 3. The method of manufacturing an airtightly sealed IC package according to claim 1, wherein the substrate having the external electrode and the internal electrode wiring is made of a ceramic material . 3. The method for manufacturing an airtightly sealed IC package according to claim 1, wherein the plate-like lid is a glass plate . 3. The method of manufacturing an hermetically sealed IC package according to claim 1, wherein the plate-like lid is a ceramic plate . 3. The method for manufacturing an airtightly sealed IC package according to claim 1, wherein the plate-like lid is a tape-like sheet . 3. The method according to claim 1, further comprising a step of measuring electrical characteristics of the IC package using the entire substrate before the step of cutting the plate-shaped lid, the substrate, and the photosensitive material . Manufacturing method of hermetic sealing IC package . 9. The method of manufacturing an hermetically sealed IC package according to claim 8, wherein electrical characteristics are measured using a probe card-like jig .

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