JP4829161B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device using a support substrate, and more particularly to a method for manufacturing a thin semiconductor device called a Chip Size Package (CSP).

  A thin semiconductor device called a CSP, which is a conventional semiconductor device, will be described with reference to FIG.

  The CSP type semiconductor device includes a semiconductor chip 31, a sealing resin 32, and a terminal 33. A circuit is formed on the main surface of the semiconductor chip 31 (not shown). The sealing resin 32 covers only the circuit formation surface of the semiconductor chip 31. The terminal 33 is electrically connected to a circuit formed on the semiconductor chip 31 and penetrates the sealing resin 32 and is exposed from the sealing resin 32.

  The CSP type semiconductor device has the above structure. Therefore, there is an advantage that the semiconductor device itself can be reduced in size and thickness as compared with a semiconductor device in which the entire semiconductor chip is covered with resin.

  A conventional CSP type semiconductor device forms a circuit on the main surface of a semiconductor wafer, forms a terminal electrically connected to the circuit, and seals the main surface of the semiconductor wafer to expose a part of the terminal. And finally, the semiconductor wafer is divided, and this is divided into semiconductor chips and manufactured.

  As a conventional method for manufacturing a CSP type semiconductor device, there is one disclosed in Patent Document 1 below. Further, as a method for manufacturing a semiconductor device using a support substrate, there is one disclosed in Patent Document 2 below.

JP 2006-140304 A JP-A-5-160090

  When a conventional CSP type semiconductor device is manufactured, the expansion coefficient differs between the semiconductor wafer and the sealing resin. Due to this difference in expansion coefficient, stress is generated between the semiconductor wafer and the sealing resin. As a result, there arises a problem that the entire semiconductor wafer is bent and deformed so as to be warped. However, such a problem is not so important after the semiconductor wafer is divided into semiconductor chips as shown in FIG. 4 because the size of the semiconductor device is reduced. However, this problem cannot be ignored in the manufacturing process in which the semiconductor chip is not yet divided and is in the state of a semiconductor wafer.

An object of the present invention is to solve the above problems and provide a method for manufacturing a CSP type semiconductor device with little deformation.

In order to solve such a problem, the manufacturing method of the CSP type semiconductor device according to the first embodiment of the present invention adheres the first support substrate to the main surface of the semiconductor wafer on which the circuit is formed on the main surface via an adhesive. With the first support substrate bonded, the back surface of the semiconductor wafer is cut, the second support substrate is bonded to the cut back surface of the semiconductor wafer, and the first support substrate is removed from the semiconductor wafer so that the adhesive remains. Forming a terminal electrically connected to the circuit through the adhesive, and forming an insulating film on the surface of the adhesive that can be bonded to the adhesive and exposes a part of the terminal; 2 After the support substrate is peeled from the semiconductor wafer, the semiconductor wafer, the adhesive, and the insulating film are cut into individual pieces.

  The method for manufacturing a semiconductor device according to the first embodiment of the present invention can reduce the bending and deformation of a semiconductor wafer by using a support substrate in the manufacturing process of the semiconductor device. In addition, since the semiconductor wafer can be cut stably, the semiconductor device can be easily thinned.

  Hereinafter, embodiments showing the best mode of the present invention will be described with reference to the drawings. In the drawing, the size, shape, and arrangement relationship of each component are only shown schematically to the extent that the present invention can be understood. In addition, the same constituent elements are given the same symbols common to the respective embodiments, and redundant description is omitted.

1 and 2 are process diagrams relating to a method of manufacturing a semiconductor device of Example 1 according to the present invention. A first embodiment of the present invention will be described with reference to FIGS.
First, the adhesive 2 is applied to the main surface of the semiconductor wafer 1 on which a circuit (not shown) is formed on the main surface. Then, the support substrate 3 is bonded to the main surface of the semiconductor wafer 1 through the adhesive 2 (FIG. 1A).

  Next, the back surface of the semiconductor wafer 1 is cut with the support substrate 3 adhered to the main surface (FIG. 1B).

Then, an adhesive 4 is applied to the cut back surface of the semiconductor wafer 1. Further, the support substrate 5 is bonded to the back surface of the semiconductor wafer 1 through the adhesive 4 (FIG. 1C).

  Thereafter, the support substrate 3 is peeled off from the semiconductor wafer 1 so that the adhesive 2 remains (FIG. 1D).

  Subsequently, the through hole 6 is opened in the remaining adhesive 2 by processing using etching, laser, or the like. At this time, in Example 1, the semiconductor wafer 1 can be further processed using the adhesive 2 having a through hole as a resist (FIG. 2A).

  Then, a terminal 7 electrically connected to a circuit formed on the main surface of the semiconductor wafer 1 through the through hole 6 is formed (FIG. 2B).

  Further, an insulating film 8 exposing a part of the terminal 7 is formed on the surface of the adhesive 2 (FIG. 2C). As a material of the insulating film 8, a material having high insulation and low viscosity and high affinity and adhesiveness with the adhesive 2 is desirable. Specifically, an epoxy resin, a silicone resin, polyimide, or the like can be used.

  Then, the support substrate 5 adhered to the back surface of the semiconductor wafer 1 is peeled off, and the adhesive 4 applied to the back surface of the semiconductor wafer 1 is also removed (FIG. 2D).

  Finally, the semiconductor wafer 1 is cut together with the adhesive 2 and the insulating film 8 to form the semiconductor device 10 having the semiconductor chip 9 (FIG. 2E).

  2D, the semiconductor wafer 1 may be cut while the support substrate 5 is bonded without peeling off the support substrate 5. At this time, the support substrate 5 is peeled after the semiconductor wafer 1 is cut.

  If the support substrate 5 is peeled before the semiconductor wafer 1 is cut, it is not necessary to peel the semiconductor substrate 9 for each semiconductor chip 9, so that the peeling can be easily performed. Further, if the support substrate 5 is peeled after the semiconductor wafer 1 is cut, the cutting can be easily performed.

  The manufacturing method of the semiconductor device according to the first embodiment of the present invention has a support substrate on either side of the semiconductor wafer until just before the cutting of the semiconductor wafer. Therefore, the bending / deformation of the semiconductor wafer in the manufacturing process of the semiconductor device can be reduced. In addition, it is possible to easily carry wafers and other wafers. Furthermore, since the semiconductor wafer can be cut stably, the semiconductor device can be easily thinned.

FIG. 2 is a process diagram relating to the method for manufacturing a semiconductor device of Example 2 according to the present invention. A second embodiment of the present invention will be described with reference to FIG.
Example 2 of the present invention is the same as Example 1 until the support substrate 2 is bonded after cutting the back surface of the semiconductor wafer 1 (FIG. 1C). Therefore, Example 2 of this invention demonstrates the process after it.

  Semiconductor wafer 1 whose back surface is cut The support substrate 3 is peeled from the semiconductor wafer 1. At this time, unlike the first embodiment, the adhesive 2 is removed (FIG. 3A).

  Subsequently, the terminal 7 electrically connected to the circuit formed on the main surface of the semiconductor wafer 1 is formed (FIG. 3B).

  Further, an insulating film 8 such as polyimide exposing a part of the terminal 7 is formed on the surface of the adhesive 2 (FIG. 3C).

  Then, the support substrate 5 adhered to the back surface of the semiconductor wafer 1 is peeled off, and the adhesive 4 applied to the back surface of the semiconductor wafer 1 is also removed (FIG. 3D).

  Finally, the semiconductor wafer 1 is cut together with the insulating film 8 to form the semiconductor device 10 having the semiconductor chip 9 (FIG. 3E).

  Note that the semiconductor wafer 1 may be cut while the support substrate 5 is bonded without peeling off the support substrate 5 in FIG. At this time, the support substrate 5 is peeled after the semiconductor wafer 1 is cut.

  If the support substrate 5 is peeled before the semiconductor wafer 1 is cut, it is not necessary to peel the semiconductor substrate 9 for each semiconductor chip 9, so that the peeling can be easily performed. Further, if the support substrate 5 is peeled after the semiconductor wafer 1 is cut, the cutting can be easily performed.

  Since the manufacturing method of the semiconductor device of Example 2 according to the present invention includes the steps as described above, the same effects as those of Example 1 are obtained. Furthermore, the step of applying an adhesive and forming a through hole can be omitted.

It is process drawing of Example 1 which shows the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing of Example 1 which shows the manufacturing method of the semiconductor device which concerns on this invention. It is process drawing of Example 2 which shows the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing of the conventional semiconductor device.

Explanation of symbols

1: Semiconductor wafer 2, 4: Adhesive 3, 5: Support substrate 6: Through hole 7: Terminal 8: Insulating film 9: Semiconductor chip

Claims (1)

Manufacturing of a CSP type semiconductor device comprising: a semiconductor wafer; an insulating film covering a circuit forming surface of the semiconductor wafer; and a terminal penetrating the insulating film and electrically connected to a circuit formed on the circuit forming surface. A method,
To the circuit formation surface of the semiconductor wafer, a step of bonding a first supporting substrate through an adhesive,
Cutting the back surface of the semiconductor wafer with the first support substrate adhered;
Adhering a second support substrate to the cut back surface of the semiconductor wafer;
Peeling the first support substrate from the semiconductor wafer such that the adhesive remains;
A step of forming the circuit electrically connected to said terminals through said adhesive,
On the surface of the adhesive, the step of forming the insulating film to expose a portion of the bonded obtained and the terminal to the adhesive,
Cutting the semiconductor wafer, the adhesive, and the insulating film into individual pieces after peeling the second support substrate from the semiconductor wafer or before peeling the second support substrate from the semiconductor wafer; A method of manufacturing a CSP type semiconductor device, comprising:

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