JP4841872B2 - Evaporation source and vapor deposition equipment - Google Patents

Description

  The present invention relates to an evaporation source, an evaporation apparatus, and an evaporation method, and more particularly to an evaporation source, an evaporation apparatus, and an evaporation method capable of forming a thin film with high film thickness uniformity on a deposition target substrate while maintaining film formation efficiency.

FIG. 5 is a configuration diagram for explaining a conventional vapor deposition apparatus.
This evaporation apparatus has one evaporation source 101, and a deposition target substrate 102 is held above the evaporation source 101. The planar shape of the deposition target substrate 102 is, for example, a quadrangle of 200 mm × 200 mm. The evaporation source 101 uses, for example, a sheathed heater (not shown) as its heat source. The heat of the sheathed heater is transmitted to the evaporation material through the crucible, the evaporation material is evaporated, and a thin film is formed on the surface of the deposition target substrate 102 by vapor deposition.

In the case where a thin film is formed on the deposition target substrate 102 having a quadrangular planar shape as described above by a vapor deposition method using the point-like evaporation source 101, the distance between the evaporation source 101 and the deposition target substrate 102 is determined as follows. Since it differs depending on the position on the surface of the film formation substrate, it is difficult to form a thin film uniformly on the entire surface of the film formation substrate. That is, as shown in FIG. 5, the distance R ₀ between the center of the deposition target substrate 102 and the evaporation source is shorter than the distance R ₁ between the edge of the deposition target substrate 102 and the evaporation source. A thin film is formed thick at the center of the film substrate, and a thin film is formed at the edge of the film formation substrate. Therefore, in order to make the film thickness distribution of the thin film formed on the deposition target substrate 102 within ± 3%, for example, the distance R ₀ between the deposition target substrate and the evaporation source needs to be 700 mm or more. However, the distance since R ₀ is higher deposition efficiency is reduced long distance R ₀ to take more than 700mm is impractical when considering mass productivity. As described above, it is difficult to form a thin film substantially uniformly on the entire surface of the deposition target substrate while maintaining the deposition efficiency.

  The present invention has been made in consideration of the above circumstances, and an object thereof is to provide an evaporation source and a vapor deposition apparatus that can form a thin film with high film thickness uniformity on a film formation substrate while maintaining film formation efficiency. And providing a vapor deposition method.

In order to solve the above problems, an evaporation source according to the present invention includes a container in which an evaporation material or a sublimation material is stored,
A material passage connected to the container and into which material evaporated or sublimated in the container flows;
Three or more openings connected to the material passage, through which the evaporated or sublimated material is discharged out of the material passage;
Comprising
The three or more openings are arranged so that a figure formed by a line connecting the three or more openings becomes a polygon.

  According to the evaporation source according to the present invention, the three or more openings are arranged so that the figure formed by the line connecting the three or more openings becomes a polygon, thereby forming the deposition target substrate. Even if the distance between the evaporation source and the evaporation source is not so long as to reduce mass productivity, a thin film with high film thickness uniformity can be formed on the deposition target substrate.

The evaporation source according to the present invention includes a first container in which the first evaporation material or the first sublimation material is stored,
A first material passage connected to the first container and into which material evaporated or sublimated in the first container flows;
Three or more first openings connected to the first material passage and from which the evaporated or sublimated material is discharged out of the first material passage;
A second container in which the second evaporation material or the second sublimation material is stored;
A second material passage connected to the second container and into which the material evaporated or sublimated in the second container flows;
Three or more second openings connected to the second material passage and from which the evaporated or sublimated material is discharged out of the second material passage;
Comprising
The three or more first openings are arranged so that a figure formed by a line connecting the three or more first openings becomes a polygon.
The three or more second openings are arranged so that a figure formed by a line connecting the three or more second openings becomes a polygon.

  According to the evaporation source according to the present invention, the three or more first openings are arranged so that the figure formed by the line connecting the three or more first openings becomes a polygon. The three or more second openings are arranged so that a figure formed by a line connecting the two or more second openings becomes a polygon. Thus, a thin film with high film thickness uniformity can be formed on the film formation substrate without increasing the distance between the film formation substrate and the evaporation source so that the mass productivity decreases, and the first evaporation material or the first evaporation material can be formed. A thin film made of a material obtained by doping the sublimation material with the second evaporation material or the second sublimation material can be formed over the deposition target substrate.

In the evaporation source according to the present invention, it is preferable that the polygon is a substantially regular polygon.
In the evaporation source according to the present invention, each of the polygon formed by the line connecting the first openings and the polygon formed by the line connecting the second openings is substantially square, and the first opening And the second opening are arranged on substantially the same circumference, and an angle formed by a line connecting each of the adjacent first opening and second opening and the center of the circle is within 34 °. It is preferable.

A vapor deposition apparatus according to the present invention is a vapor deposition apparatus for forming a vapor deposition film on a deposition target substrate,
The evaporation source according to any one of claims 1 to 4,
A deposition chamber containing the evaporation source;
It is characterized by comprising.

A vapor deposition apparatus according to the present invention is a vapor deposition apparatus for forming a vapor deposition film on a deposition target substrate,
A deposition chamber;
The evaporation source according to claim 1 disposed in the vapor deposition chamber,
A substrate holding mechanism that is disposed in the vapor deposition chamber and holds the deposition target substrate so as to face the evaporation source;
Comprising
The polygon is substantially square, and the distance between the film formation substrate held by the substrate holding mechanism and the opening is substantially equal to the length of one side of the substantially square.

A vapor deposition apparatus according to the present invention is a vapor deposition apparatus for forming a vapor deposition film on a deposition target substrate,
A deposition chamber;
The evaporation source according to claim 4 disposed in the vapor deposition chamber,
A substrate holding mechanism that is disposed in the vapor deposition chamber and holds the deposition target substrate so as to face the evaporation source;
Comprising
The distance between the film formation substrate held by the substrate holding mechanism and each of the first opening and the second opening is substantially equal to the length of one side of the substantially square.

In the vapor deposition method according to the present invention, the evaporation material or the sublimation material is heated to evaporate or sublimate, the evaporated or sublimated material is discharged from three or more openings, and the released material is deposited on the deposition target substrate. A vapor deposition method for vapor deposition,
The three or more openings are arranged so that a figure formed by a line connecting the three or more openings becomes a polygon.

In the vapor deposition method according to the present invention, the first evaporation material or the first sublimation material is heated to evaporate or sublimate, and the evaporated or sublimated first material is discharged from three or more first openings, and 2 The evaporation material or the second sublimation material is heated to evaporate or sublimate, and the evaporated or sublimated second material is discharged from three or more second openings, and the discharged first material and second material are discharged. Is a vapor deposition method for vapor-depositing on a deposition substrate,
The three or more first openings are arranged so that a figure formed by a line connecting the three or more first openings becomes a polygon.
The three or more second openings are arranged so that a figure formed by a line connecting the three or more second openings becomes a polygon.

  As described above, according to the present invention, it is possible to provide an evaporation source, an evaporation apparatus, and an evaporation method capable of forming a thin film with high film thickness uniformity on a deposition target substrate while maintaining film formation efficiency.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described below with reference to the drawings.
(Embodiment 1)
1A is a plan view showing an evaporation source according to Embodiment 1 of the present invention, and FIG. 1B is a cross-sectional view taken along line 1B-1B shown in FIG.

  As shown in FIGS. 1A and 1B, the evaporation source includes a quartz container 1 that stores an evaporation material (not shown). A lamp heater 2 as a heat source is disposed around the container 1. The evaporation material accommodated in the container 1 is directly heated by the radiant heat from the lamp heater 2. An opening 1 a is formed in the upper part of the container 1, and this opening 1 a is connected to the evaporation material passage 3.

  The evaporating material passage 3 is formed by the upper plate member 4 and the lower plate member 5, and is disposed between the upper plate member 4 and the lower plate member 5. Each of the upper plate member 4 and the lower plate member 5 has a substantially square planar shape. First to fourth material discharge openings 4a to 4d are provided at the four corners of the upper plate-like member 4, and the opening sizes of the material discharge openings are substantially equal. An opening 1 a is provided at the center of the lower plate-like member 5, and this opening corresponds to the opening at the top of the container 1. Further, support legs 6a and 6b are arranged at the four corners of the lower surface of the lower plate-like member 5, and the whole evaporation source is supported by these support legs. Each of the upper plate-like member 4 and the lower plate-like member 5 is formed of oxygen-free copper or Al and is heated by a sheathed heater (not shown).

In the evaporation source, the evaporation material in the container 1 is directly heated by the radiant heat from the lamp heater 2, the evaporated evaporation material flows into the evaporation material passage 3 from the opening 1 a, and the evaporation material in the horizontal direction in the evaporation material passage 3. The first to fourth material discharge openings 4a to 4d are discharged to the outside of the evaporation source. A method of depositing an evaporation material on a film formation substrate using such an evaporation source is a film formation substrate (not shown) held at a position facing the first to fourth material discharge openings 4a to 4d. 1), the evaporation material discharged from the first to fourth material discharge openings is attached to form a thin film.
In this embodiment, an evaporation material that evaporates when heated is used, but a sublimation material that sublimates when heated can also be used.

A quadrangle formed by lines connecting the first to fourth material discharge openings 4a to 4d is a substantially square. The distance between each of the first to fourth material discharge openings 4a to 4d and the deposition target substrate is _R0, and the center of the first material discharge opening 4a and the second material discharge openings 4b When the distance from the center is R ₂ , if a vapor deposition apparatus in which the distance R ₀ and the distance R ₂ are substantially equal and an evaporation source and a film formation substrate are arranged is used, the film formation substrate has a very uniform film thickness. It was confirmed that a highly reliable thin film can be formed. The center distance between the center of the third material discharge opening 4c of the second material discharge opening 4b is R _2, the center and the fourth material of the third material discharge opening 4c distance between the center of the discharge opening 4d is R _2, the distance between the centers of the first material discharge opening 4a of the fourth material discharge opening 4d is also R _2.
Specifically, the distance _{R 0} and 230 mm, and the distance _{R 2} to 230 mm, the film thickness distribution of the thin film formed on the target substrate that is a square 200 mm × 200 mm is to be the ± 1.70% Was confirmed.

According to the first embodiment, by arranging the first to fourth material discharge openings so that the quadrangle formed by the lines connecting the four material discharge openings is substantially square, Even if the distance R ₀ between the deposition target substrate and the evaporation source is not increased so as to reduce mass productivity, a thin film with high film thickness uniformity can be formed on the deposition target substrate. Therefore, it is possible to deposit a thin film with high film thickness uniformity on the deposition substrate while maintaining the deposition efficiency, which was difficult with a conventional evaporation source with one evaporation source and one material discharge opening. It becomes.

In the first embodiment, the first to fourth material discharge openings are arranged so that the quadrangle formed by the lines connecting the four material discharge openings is substantially square. However, the present invention is not limited to this, and the number and positions of the material discharge openings can be changed as follows.
For example, the material discharge openings can be arranged so that the polygon formed by the lines connecting the plurality of material discharge openings is a substantially regular polygon. Thus, a thin film with high film thickness uniformity can be formed on the deposition target substrate.

  It is also possible to arrange the material discharge openings so that the triangle formed by the lines connecting the three material discharge openings is an isosceles triangle. In this case, the film formation efficiency is maintained. However, a thin film with high film thickness uniformity can be formed on the deposition target substrate.

  Further, the material discharge openings can be arranged so that each of the plurality of material discharge openings is connected to form a polygon. In this case, the thickness uniformity of the thin film formed on the film formation substrate is lower than the case where a plurality of material discharge openings are connected to form a regular polygon, but compared with a conventional evaporation source. The film thickness uniformity of the thin film formed on the deposition target substrate can be improved while maintaining the deposition efficiency.

  Further, in the case of the evaporation source according to the above-described modification, the respective opening sizes of the plurality of material discharge openings are formed to be substantially equal to the evaporation source according to the first embodiment, but is not limited thereto. It is also possible to change the opening size of each of the plurality of material discharge openings so as to improve the film thickness uniformity of the thin film formed on the deposition target substrate.

(Embodiment 2)
The co-evaporation source according to the present embodiment evaporates two evaporation materials to form a thin film on the film formation substrate, and forms a thin film on the film formation substrate by so-called co-evaporation.

  2A is a plan view showing a first evaporation source for evaporating the first evaporation material, and FIG. 2B is a cross-sectional view taken along line 2B-2B shown in FIG. 2A. . FIG. 3A is a plan view showing a second evaporation source for evaporating the second evaporation material, and FIG. 3B is a cross-sectional view taken along line 3B-3B shown in FIG. . 4A is a plan view showing a co-evaporation source according to Embodiment 2 of the present invention, and FIG. 4B is a cross-sectional view taken along line 4B-4B shown in FIG. 4A. . The co-evaporation source shown in FIG. 4 is obtained by incorporating the first evaporation source 10 into the second evaporation source 20.

  The first evaporation source 10 shown in FIG. 2 has substantially the same configuration as the evaporation source shown in FIG. 1, except that the container 1 and the lamp heater 2 are located slightly to the right of the center of the lower plate member 5. Only. Accordingly, the same reference numerals as those in FIG. 1 are given to FIG. 2, and the detailed description of FIG. 2 is omitted.

  The second evaporation source 20 shown in FIG. 3 includes a quartz container 1 that houses a second evaporation material (not shown). A lamp heater 2 as a heat source is disposed around the container 1. The second evaporating material accommodated in the container 1 is directly heated by the radiant heat from the lamp heater 2. An opening 1 a is formed in the upper part of the container 1, and this opening 1 a is connected to the evaporation material passage 13.

  The evaporating material passage 13 is formed by the upper plate member 14 and the lower plate member 15, and is disposed between the upper plate member 14 and the lower plate member 15. Each of the upper plate member 14 and the lower plate member 15 has a substantially square planar shape having the same size as the upper plate member 4 and the lower plate member 5 shown in FIG. Similarly to the upper plate member 4 shown in FIG. 2, first to fourth material discharge openings 14a to 14d are provided at the four corners of the upper plate member 14, and each of these material discharge openings is provided. The opening sizes are substantially equal. An opening 1 a is provided slightly on the left side of the center of the lower plate member 15, and this opening corresponds to the upper opening of the container 1. Support legs 16a and 16b are disposed at the four corners of the lower surface of the lower plate member 15, and the entire second evaporation source 20 is supported by these support legs. Each of the upper plate member 14 and the lower plate member 15 is made of oxygen-free copper or Al and is heated by a sheathed heater (not shown).

  The upper plate member 14 and the lower plate member 15 are provided with a second opening 15a. The evaporating material passage 13 is not connected to the second opening 15a but is blocked from the second opening 15a. The 2nd opening part 15a is a magnitude | size which can insert the container 1 and the lamp heater 2 of the 1st evaporation source 10 shown in FIG. Each of the first to fourth material discharge openings 14a to 14d is located above the plate-like portion of the upper plate-like member 14 as shown in FIG. When the first evaporation source 10 of FIG. 2 is incorporated in the two evaporation sources 20, the first evaporation source 10 is disposed so as to have substantially the same height as the first to fourth material discharge openings 4a to 4d. Yes.

In the second evaporation source 20, the evaporation material in the container 1 is directly heated by the radiant heat from the lamp heater 2, and the vaporized evaporation material flows into the evaporation material passage 13 from the opening 1 a. In this way, it is spread in the horizontal direction and discharged from the first to fourth material discharge openings 14a to 14d to the outside of the second evaporation source 20.
In this embodiment, an evaporation material that evaporates when heated is used as the evaporation material of the second evaporation source 20, but a sublimation material that sublimes when heated can also be used.

  The quadrangle formed by the lines connecting the first to fourth material discharge openings 14a to 14d is substantially a square, and the positional relationship between the first to fourth material discharge openings 14a to 14d is as follows. This is the same as the evaporation source shown in FIG. Therefore, the second evaporation source 20 in FIG. 3 also has the same effect as the evaporation source 10 in FIG.

Next, the co-evaporation source shown in FIG. 4 in which the first evaporation source 10 shown in FIG. 2 is incorporated in the second evaporation source 20 shown in FIG. 3 will be described.
As shown in FIG. 4, the first evaporation source 10 is disposed so as to overlap the second evaporation source 20, and the container 1 and the lamp of the first evaporation source 10 are placed in the second opening 15 a of the second evaporation source 20. Insert the heater 2 and the like. The positional relationship is such that the angle θ formed by the diagonal line 7 of the upper plate member 4 of the first evaporation source and the diagonal line 17 of the upper plate member 14 of the second evaporation source is within 34 °, preferably within 30 °. The first evaporation source is placed on the second evaporation source. That is, the first evaporation source 10 is rotated within + 17 °, preferably within + 15 ° with respect to the position of the first evaporation source shown in FIG. 2, and the second evaporation source 20 is moved to the position of the second evaporation source shown in FIG. On the other hand, it is arranged such that the angle θ is within 34 °, preferably within 30 ° by rotating within −17 °, preferably within −15 °.

  In other words, the first to fourth material discharge openings 4a to 4d and 14a to 14d are arranged on substantially the same circumference. An angle formed by a line connecting the adjacent first material discharge opening 4a and first material discharge opening 14a and the center of the circle, the second material discharge opening 4b and the second material discharge opening 4a. An angle formed by a line connecting each of the material discharge openings 14b and the center of the circle, and connecting each of the third material discharge opening 4c and the third material discharge opening 14c and the center of the circle. The angles formed by the lines and the angles formed by the lines connecting each of the fourth material discharge opening 4d and the fourth material discharge opening 14d and the center of the circle are all within 34 °, preferably 30. It is within °.

  In the co-evaporation source, the first evaporation material in the container 1 is directly heated by the radiant heat from the lamp heater 2, and the vaporized first evaporation material flows into the evaporation material passage 3 from the opening 1a. 3 is expanded horizontally and discharged from the first to fourth material discharge openings 4 a to 4 d to the outside of the first evaporation source 10, and radiant heat from the lamp heater 2 causes the first in the container 1. 2 The evaporation material is directly heated, and the vaporized second evaporation material flows into the evaporation material passage 13 from the opening 1a and is spread horizontally in the evaporation material passage 13 to release the first to fourth materials. Each of the openings 14 a to 14 d is discharged to the outside of the second evaporation source 20.

  A method of depositing an evaporation material on a film formation substrate using such a co-evaporation source is a method in which the deposition material held at positions facing the first to fourth material discharge openings 4a to 4d and 14a to 14d is used. The first evaporation material discharged from the first to fourth material discharge openings 4a to 4d was discharged from the first to fourth material discharge openings 14a to 14d onto the film substrate (not shown). A thin film is formed by adhering a material doped with the second evaporation material. The doping amount can be controlled by adjusting the discharge amount of the second evaporation material with respect to the discharge amount of the first evaporation material.

As described above, the quadrangle formed by the lines connecting the first to fourth material discharge openings 4a to 4d is substantially square, and the first to fourth material discharge openings 14a to 14a. A quadrangle formed by lines connecting the respective 14d is also substantially square with the same size. The first to fourth material discharge opening 4 a to 4 d, a _{R 0} the distance between 14a~14d respectively deposition substrate, the center and the second material for the release of the first material discharge opening 4a the distance between the center of the opening 4b and R _2, when the center of the first material discharge opening 14a and the distance between the center of the second material discharge opening 14b and the R _2, the distance R ₀ said distance with co-evaporation device disposed substantially equally to co evaporation source and the deposition target substrate to R _2, it can be deposited extremely high film thickness uniformity thin film on the deposition target substrate is confirmed to. Specifically, for example, when the distance R ₀ is 230 mm, the distance R ₂ is 230 mm, and the angle θ is 34 °, it is confirmed that the film thickness distribution of the thin film formed on the deposition target substrate can be ± 3%. It was done.

  According to the second embodiment, the same effect as in the first embodiment can be obtained. In addition, the angle θ formed by the diagonal line 7 of the upper plate member 4 of the first evaporation source and the diagonal line 17 of the upper plate member 14 of the second evaporation source is set to be within 34 °, whereby the second evaporation material has the second evaporation material. A thin film doped with an evaporation material can be formed on a deposition target substrate with a film thickness distribution within ± 3%.

  In the second embodiment, in each of the first evaporation source and the second evaporation source, the first to fourth so that the quadrangle formed by the lines connecting the four material discharge openings is substantially square. However, the present invention is not limited to this, and the number and positions of the material discharge openings can be changed as in the first embodiment.

  In the second embodiment, the size, number, and position of the material discharge opening are the same in the first evaporation source 10 and the second evaporation source 20, but the present invention is not limited to this. It is also possible to make the size, number and position of the discharge openings different between the first evaporation source and the second evaporation source.

  In the second embodiment, the first to fourth material discharge openings 4 a to 4 d of the first evaporation source 10 and the first to fourth material discharge openings 14 a to 14 d of the second evaporation source 20 are used. Although the height at which each is arranged is substantially the same, it is also possible to have different heights.

(Embodiment 3)
A vapor deposition apparatus according to Embodiment 3 of the present invention will be described.
This deposition apparatus is for depositing a thin film on a deposition target substrate such as a glass substrate. The vapor deposition apparatus includes a chamber serving as a vapor deposition chamber. An evaporation source is arranged in the chamber. As the evaporation source, the evaporation source according to the first embodiment may be used, or the co-evaporation source according to the second embodiment may be used.

In the chamber, a substrate holding mechanism that holds the deposition target substrate is disposed above the evaporation source.
The vapor deposition apparatus heats the evaporation source to discharge the evaporation material or the sublimation material upward from the material discharge opening, thereby forming a vapor deposition film on the entire surface of the deposition target substrate held in a stationary state by the substrate holding mechanism. The film is formed.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the container 1 may not be made of quartz as long as it is a material that directly transmits radiant heat from a heat source to the evaporation material. Moreover, you may form the container 1 with stainless steel, molybdenum, or silicon carbide. In this case, the container is heated directly by the radiant heat from the heat source and the evaporation material is heated.

  Moreover, in the said embodiment, although the lamp heater 2 is used, it is not limited to this, Other types of heaters, for example, a sheathed heater, can also be used.

(A) is a top view which shows the evaporation source by Embodiment 1 of this invention, (B) is sectional drawing along the 1B-1B line | wire shown to (A). (A) is a top view which shows the 1st evaporation source which evaporates 1st evaporation material, (B) is sectional drawing along the 2B-2B line | wire shown to (A). (A) is a top view which shows the 2nd evaporation source which evaporates 2nd evaporation material, (B) is sectional drawing along the 3B-3B line shown to (A). (A) is a top view which shows the co-evaporation source by Embodiment 2 of this invention, (B) is sectional drawing along the 4B-4B line | wire shown to (A). It is a block diagram for demonstrating the conventional vapor deposition apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Container 1a ... Opening part 2 ... Lamp heater 3,13 ... Evaporation material channel | path 4,14 ... Upper plate-shaped member 4a-4d, 14a-14d ... 1st thru | or 4th material discharge | release opening 5,15 ... Lower part Plate-like members 6a, 6b, 6c, 6d, 16a, 16b, 16c, 16d ... Support legs 7 ... Diagonal lines of upper plate-like members of the first evaporation source 10 ... First evaporation source 15a ... Second opening 17 ... Second Diagonal line 20 of upper plate member of evaporation source 20 ... second evaporation source 101 ... evaporation source 102 ... deposition substrate θ ... angle R ₀ ... distance R ₁ between the central portion of the deposition substrate and the evaporation source R ₁ ... deposition Distance between substrate edge and evaporation source

Claims (4)

A first container in which the first evaporation material or the first sublimation material is stored;
A first material passage connected to the first container, into which a material evaporated or sublimated in the first container flows, and the material is spread in a horizontal direction;
Four first openings connected to the first material passage and from which the evaporated or sublimated material is discharged out of the first material passage;
A second container in which the second evaporation material or the second sublimation material is stored;
A second material passage connected to the second container, into which the material evaporated or sublimated in the second container flows, and the material is spread in a horizontal direction;
Four second openings connected to the second material passage and from which the evaporated or sublimated material is discharged out of the second material passage;
Comprising
Figure formed by lines connecting the four first openings of such a polygon, the four first openings of are arranged,
Figure formed by lines connecting the four second opening so that the polygon, the four second openings of are arranged,
The first material passage is formed by a first upper plate-like member and a first lower plate-like member, and is provided between the first upper plate-like member and the first lower plate-like member,
The four first openings are provided in the first upper plate member,
The first lower plate-like member is provided with a third opening, and the first material passage and the inside of the first container are connected by the third opening,
Each of the polygon formed by the line connecting the first openings and the polygon formed by the line connecting the second openings are substantially square, and each of the first opening and the second opening is substantially An evaporation source, characterized in that an angle formed by lines connecting the first and second openings adjacent to each other on the same circumference and the center of the circle is within 34 °. 2. The second material passage according to claim 1, wherein the second material passage is formed by a second upper plate-like member and a second lower plate-like member, and the second upper plate-like member and the second lower plate-like member are In between
The four second openings are provided in the second upper plate member,
The second lower plate-like member is provided with a fourth opening, and the second material passage and the inside of the second container are connected by the fourth opening. A vapor deposition apparatus for forming a vapor deposition film on a film formation substrate,
The evaporation source according to claim 1 or 2,
A deposition chamber containing the evaporation source;
The vapor deposition apparatus characterized by comprising. A vapor deposition apparatus for forming a vapor deposition film on a film formation substrate,
A deposition chamber;
The evaporation source according to claim 1 or 2, disposed in the vapor deposition chamber,
A substrate holding mechanism that is disposed in the vapor deposition chamber and holds the deposition target substrate so as to face the evaporation source;
Comprising
The deposition apparatus characterized in that the distance between the deposition target substrate held by the substrate holding mechanism and each of the first opening and the second opening is substantially equal to the length of one side of the substantially square.

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