JP4876445B2 - Microstructure manufacturing method and manufacturing apparatus - Google Patents

Description

  The present invention relates to a manufacturing method and a manufacturing apparatus for a microstructure such as a micro optical component and a micro mechanical component manufactured by an additive manufacturing method.

  The additive manufacturing method is rapidly spreading in recent years as a method of modeling a three-dimensional object having a complicated shape designed by a computer with a short delivery time. A three-dimensional object created by the additive manufacturing method is used as a model (prototype) of parts of various devices to check the quality and quality of parts. The size of parts to which this method is applied was relatively large parts of several centimeters or more, but in recent years, this method has also been applied to minute parts formed by precision machining, such as minute gears and minute optical parts. There is a need to apply.

  As the additive manufacturing method, a donor substrate carrying a plurality of thin film patterns corresponding to the cross-sectional shape of the microstructure is attached on the lower stage, the target substrate is attached to the upper stage, and the lower stage and the upper stage are moved relative to each other. By repeatedly positioning, pressing and separating the donor substrate and the target substrate, a plurality of thin film patterns on the donor substrate are peeled off one by one and transferred onto the target substrate, and a plurality of thin film patterns are laminated by room temperature bonding. A manufacturing method of a structure is known (for example, refer to Patent Documents 1 and 2).

In the manufacturing method of the microstructure, the donor substrate is observed by the mark detection unit provided on the upper stage when positioning the donor substrate and the target substrate. Thereby, a thin film pattern can be laminated | stacked with high precision.
Japanese Patent No. 3161362 JP 2000-238000 A

  However, in the conventional microstructure manufacturing method, an attachment error may occur when the donor substrate and the target substrate are attached to the lower stage and the upper stage, and the target substrate may be displaced from the stage during the stacking process. However, since the horizontal position of the target substrate is not confirmed, the thin film pattern on the donor substrate cannot be transferred to a desired region on the target substrate, resulting in a decrease in yield and a decrease in the shape accuracy of the microstructure. Or

  In the method described in Patent Document 2, since the observation unit is disposed on the back side of the target substrate, it is necessary to use a transparent target substrate, and the material of the target substrate is limited.

  Accordingly, an object of the present invention is to provide a manufacturing method and a manufacturing apparatus of a microstructure that can be accurately positioned without using a special target substrate, thereby improving yield and accuracy. is there.

In order to achieve the above object, a first aspect of the present invention is a second stage in which a donor substrate carrying a plurality of thin film patterns is mounted on a first stage, and is disposed to face the first stage. A first step of mounting a target substrate thereon; a second step of detecting a horizontal relative position of the donor substrate and the target substrate mounted on the first and second stages; The donor substrate and the target substrate are moved relative to each other based on the detection result of step 2, and the donor substrate and the target substrate are horizontally positioned, pressed and separated, and the thin film on the donor substrate and a third step of transferring the pattern to the target substrate, the second step, the surface of the donor substrate by the donor substrate observing means Guess by observing the target substrate observing means the surface of the target substrate, in the donor substrate and the said target substrate by observing the pressure marks when the pressure contact with the donor substrate target substrate and is pressing position Provided is a method for manufacturing a microstructure, wherein a horizontal relative position of the donor substrate and the target substrate is detected.

In order to achieve the above object, according to a second aspect of the present invention, a first stage to which a donor substrate carrying a plurality of thin film patterns is attached, a second stage to which a target substrate is attached, and the surface of the donor substrate The donor substrate observing means for observing the target substrate, the target substrate observing means for observing the surface of the target substrate, and the first and second stages mounted on the first and second stages. Detecting means for detecting a horizontal relative position of the donor substrate and the target substrate; and controlling the first and second stages based on a detection result by the detecting means; Positioning, pressing and separating in the horizontal direction, the plurality of thin film patterns on the donor substrate And a control unit for transferring the above, the detection unit observes the pressure marks when pressed against the target substrate and the donor substrate on the basis of the observation result by the donor substrate observation means and said target substrate observation means And providing a microstructure manufacturing apparatus that detects a horizontal relative position of the donor substrate and the target substrate at a position where the donor substrate and the target substrate are in pressure contact with each other.

  According to the first and second aspects, an error in attaching the donor substrate and the target substrate to the first and second stages may occur by detecting the relative positions of the donor substrate and the target substrate in the horizontal direction. Even if the attachment positions of the donor substrate and the target substrate are shifted during the transfer process, the positioning can be performed with high accuracy.

  According to the present invention, it is possible to perform accurate positioning without using a special target substrate, thereby improving yield and accuracy.

[First Embodiment]
(Configuration of microstructure manufacturing equipment)
FIG. 1 shows a microstructure manufacturing apparatus according to a first embodiment of the present invention. The microstructure manufacturing apparatus 1 includes a vacuum chamber 11, a high-precision xyθ stage 12 as a first stage installed in a lower portion of the vacuum chamber 11, and an xyθ stage 12 facing the xyθ stage 12. A z stage 13 as a second stage installed at the top, an observation means 14 disposed at an intermediate position between the xyθ stage 12 and the z stage 13 at the time of observation, and a monitor connected to the observation means 14 when not needed. 19 and a control device 30 that controls the entire microstructure manufacturing apparatus 1.

  The vacuum chamber 11 includes a vacuum pump (not shown), a vacuum gauge, a gas cylinder that supplies a cleaning gas, and the like, and is configured so that the inside can be made high vacuum.

  The xyθ stage 12 includes a driving mechanism (not shown) that moves the mounted donor substrate 18 in the x and y directions and rotates it around the z axis. The xyθ stage 12 desirably belongs to a category called a high-precision xyθ stage.

  The z stage 13 includes a drive mechanism (not shown) for mounting the target substrate 15 to which the thin film patterns 17A and 17B on the donor substrate 18 are transferred and moving the target substrate 15 in the z direction.

  The observation means 14 processes an optical system for simultaneously observing and enlarging a predetermined portion of the target substrate 15 and the donor substrate 18, an image sensor such as a CCD (charge coupled device), and a video signal from these image sensors. And various circuits for displaying on the monitor 19. The observation means 14 is attached with an xyz stage (not shown), and this xyz stage is used for putting the observation means 14 into and out of both substrates and focusing the target substrate 15 and the donor substrate 18. Moreover, the observation means 14 uses the type used in a vacuum. Since the vacuum observation means 14 can be used without returning the vacuum chamber 11 to the atmosphere, it is not necessary to attach to or remove from the vacuum chamber 11. In order to fabricate a highly accurate microstructure, it is preferable to align the target substrate and the donor substrate each time a thin film pattern is stacked. Furthermore, it is preferable to use a high-resolution SEM (scanning electron microscope) that can be used in vacuum as the observation means because it enables high-precision alignment.

  The observation means may be an atmospheric type. It is attached to the vented vacuum chamber 11 and has a configuration in which both the substrates 15 and 18 are aligned and then removed from the vacuum chamber 11. For the atmosphere, since it is necessary to attach and detach, the optical axis may be inclined due to an attachment error. When the optical axis is inclined, the alignment accuracy of the target substrate 15 and the donor substrate 18 in the horizontal plane decreases. Therefore, before aligning the substrates 15 and 18, the optical axis is adjusted to be vertical while looking at the optical axis adjustment marks formed on the vacuum chamber 11, the xyθ stage 12 and the z stage 13. It is necessary to keep.

  The donor substrate 18 includes a Si wafer 16 and thin film patterns 17A and 17B formed on the Si wafer 16 in a predetermined pattern. Note that the number of thin film patterns is not limited to the two shown in FIG. 1, but can be any number.

  The monitor 19 displays an image picked up by the image pickup device of the observation means 14, and is configured using a liquid crystal display (LCD), a CRT display, or the like.

(Control device)
FIG. 2 shows the control device 30 of the microstructure manufacturing apparatus 1. The control device 30 includes a CPU 31 that controls the entire microstructure manufacturing apparatus 1. The CPU 31 includes an x-axis motor 12 a, an x-axis position detection unit 12 b, and an xyθ stage 12 that constitute the x-stage of the xyθ stage 12. The y-axis motor 12c and the y-axis position detector 12d constituting the y-stage, the θ-motor 12e and the θ-position detector 12f constituting the θ-stage of the xyθ stage 12, and the z-axis motor 13a and the z-axis position constituting the z-stage 13 A detection unit 13b, the observation unit 14, a memory 32 including a ROM and a RAM for storing various information including a program of the CPU 31 (moving pitch information of the xyθ stage 12, etc.), a vacuum pump 33 for evacuating the vacuum chamber 11, FAB processing unit 34 for irradiating a particle beam for substrate cleaning, Vacuum gauge 36 for measuring the degree, and a display control and drive unit 37 that displays driving monitor 19 each are connected.

  Based on the program stored in the memory 32 and the movement pitch information of the xyθ stage 12, the CPU 31 moves the xyθ stage 12 on which the donor substrate 18 is placed at a predetermined pitch, and the target substrate attached to the z stage 13 Each part of the microstructure manufacturing apparatus 1 is controlled so that a plurality of thin film patterns 17 are sequentially stacked on the substrate 15.

(Manufacturing method of microstructure)
Next, a manufacturing method of the microstructure will be described with reference to FIGS. FIG. 3 shows an image displayed on the monitor 19 by the observation means 14, in which (a) is a monitor screen in which a positional deviation occurs between the target substrate and the donor substrate, and (b) is a target substrate. The monitor screen when the donor substrate is aligned is shown.

(1) Preparation of Donor Substrate and Target Substrate First, the operator prepares a donor substrate 18 carrying the thin film patterns 17A and 17B on the Si wafer 16 and a target substrate 15.

  The donor substrate 18 can be produced by a method as described in Japanese Patent No. 3161362. That is, a thin film is uniformly formed on the Si wafer 16 by sputtering, and the thin film is etched by lithography to form thin film patterns 17A and 17B. A release layer that facilitates peeling of the thin film patterns 17A and 17B is preferably formed between the Si wafer 16 and the thin film. For the release layer, for example, a known material such as polyimide, fluorinated polyimide, or silicon oxide can be used. Alternatively, a thermal oxide film formed by performing a thermal oxidation process on the Si wafer 16 may be used. The Si wafer 16 may be made of other materials such as glass.

  The target substrate 15 has a convex cross section, and the front end surface of the convex portion is a transfer surface 15a to which the thin film pattern 17 is transferred. The target substrate 15 is preferably made of a material that can be removed by etching after all the thin film patterns 17 are stacked and a microstructure is formed on the target substrate 15.

(2) Attachment of donor substrate and target substrate Next, the operator carries the target substrate 15 into the vacuum chamber 11 and fixes the target substrate 15 to the lower surface of the z stage 13. Further, the donor substrate 18 is fixed to the xyθ stage 12. Next, the operator operates the control device 30 and operates the vacuum pump 33 to evacuate the vacuum chamber 11 to bring it into a high vacuum state or an ultra vacuum state.

(3) Positioning of Thin Film Pattern Next, the observation means 14 is installed between the target substrate 15 and the donor substrate 18, that is, at a position where both the substrates 15 and 18 can be observed simultaneously. At this time, since the target substrate 15 and the donor substrate 18 are not aligned, the screen of the monitor 19 connected to the observation means 14 shows the transfer surface 15 a of the target substrate 15 and the first layer of the donor substrate 18. The thin film pattern 17A is displayed in a state in which a positional deviation has occurred as shown in FIG.

  Next, the operator operates an operation panel (not shown) while visually observing the screen of the monitor 19, and drives the x-axis motor 12a, the y-axis motor 12c, and the θ motor 12e by the control of the CPU 31 so that they match. Then, the xyθ stage 12 is moved in each of the x, y, and θ directions, and as shown in FIG. 3B, the transfer surface 15a of the target substrate 15 on the screen and the first thin film pattern 17A are in a horizontal plane. Align so that they match within. After the alignment, the operator retracts the observation means 14 to a standby position that does not interfere with the deposition process of the thin film patterns 17A and 17B. The positioning between the substrates 15 and 18 and the arrangement and retraction of the observation means 14 may be automatically performed.

  Next, the surfaces of the donor substrate 18 and the target substrate 15 are irradiated with FAB by the FAB processing unit 34 to clean the surfaces of both the substrates 15 and 18.

(4) Transfer of Thin Film Pattern Next, when the z-axis motor 13a is driven under the control of the CPU 31 to lower the z stage 13, the transfer surface 15a of the target substrate 15 comes into contact with the upper surface of the thin film pattern 17A. At this time, since the z stage 13 applies a predetermined load downward for a predetermined time, the thin film pattern 17A is bonded to the transfer surface 15a of the target substrate 15 at room temperature.

  Next, when the z stage 13 is raised, the thin film pattern 17 </ b> A is peeled off from the Si wafer 16 and transferred to the transfer surface 15 a of the target substrate 15.

  Next, as shown in FIG. 1, the observation means 14 is again carried between the donor substrate 18 and the target substrate 15, and the second layer thin film pattern 17 </ b> B of the donor substrate 18 faces the thin film pattern 17 </ b> A on the z stage 13. As described above, the x-axis motor 12a, the y-axis motor 12c, and the θ motor 12e are driven to move the xyθ stage 12, and positioning is similarly performed using the observation means 14. After the alignment is completed, the observation means 14 is retracted to the standby position. Next, the surfaces of the donor substrate 18 and the target substrate 15 are irradiated with FAB by the FAB processing unit 34 to clean the surfaces of both the substrates 15 and 18.

  Next, when the z-axis motor 13a is driven under the control of the CPU 31 to lower the z stage 13, the thin film pattern 17A comes into contact with the thin film pattern 17B. In this state, a predetermined load is applied to the thin film pattern 17B by the z stage 13 for a predetermined time.

  Next, when the z-axis motor 13a is driven to raise the z stage 13, the thin film pattern 17B is peeled off from the Si wafer 16 and transferred to the lower surface of the thin film pattern 17A, and the thin film pattern 17A and the thin film pattern 17B are laminated. .

  When there are three or more thin film patterns, the CPU 31 determines whether or not there is an unprocessed thin film pattern. If there are, the positioning process and the transfer / stacking process for the third thin film pattern are sequentially executed. The Positioning, bonding, and separation are repeatedly performed until the thin film pattern on the donor substrate 18 disappears, and finally, a laminated structure in which n thin film patterns are laminated on the target substrate 15 is formed. Thereafter, the target substrate 15 is removed by etching to obtain a laminated structure.

(Effects of the first embodiment)
According to the first embodiment, the following effects are obtained.
(A) Since the thin film pattern of the donor substrate 18 and the relative position in the horizontal direction of the target substrate 15 are positioned by observing each stack by the observation means 14, there is an error in mounting the target substrate 15 and the donor substrate 18. Even if there is a shift in the mounting position of the target substrate 15 and the donor substrate 18 in the stacking process, the microstructure can be manufactured with high accuracy and the product yield is improved.
(B) Since each is observed from the surface side of the target substrate 15 and the donor substrate 18, the transparent target substrate required by the conventional apparatus becomes unnecessary, and it is not necessary to limit the material of the target substrate.

  Note that alignment marks may be formed in advance on the target substrate 15 and the donor substrate 18 and positioning may be performed based on the alignment marks.

[Second Embodiment]
FIG. 4 shows a microstructure manufacturing apparatus according to the second embodiment of the present invention. The second embodiment is different from the first embodiment in having a plurality of observation means. In FIG. 4, the vacuum chamber 11 and the control device 30 are not shown.

  The microstructure manufacturing apparatus 1 according to the second embodiment includes a target substrate observation unit 14A for observing the target substrate 15 and a donor substrate observation unit 14B for observing the donor substrate 18. The target substrate observation unit 14 </ b> A is integrated with the xyθ stage 12 and configured to be movable together with the xyθ stage 12. Further, the donor substrate observation means 14B is fixed in the vacuum chamber 11 shown in FIG.

(Positioning method between substrates)
Figure 5 illustrates a method of measuring the distance X _T between the target substrate and the target substrate observing means in the microstructure manufacturing apparatus of FIG. Here, a method of first aligning the thin film pattern 17A on the donor substrate 18 with the target substrate 15 will be described. Although only the alignment method in the X direction will be described, the Y direction can also be aligned in the same manner as in the X direction.

  (A) of FIG. 5 has shown the positional relationship of each part when the xy (theta) stage 12 is located in the origin. The target substrate 15 is attached to the z stage 13 and the donor substrate 18 is attached to the xyθ stage 12.

  In order to align the thin film pattern 17A and the target substrate 15, it is necessary to grasp the relative distance ΔX between them. If the xyθ stage 12 is moved by the relative distance ΔX, the thin film pattern 17A and the target substrate 15 can be aligned.

In order to grasp the relative distance ΔX, the distance X _L between the substrate observation means 14A and 14B, the distance X _D between the left side of the thin film pattern 17A and the donor substrate observation means 14B, the left side of the target substrate 15 and the target substrate observation means measuring the distance _{X T} between 14A. Based on these measurements,
ΔX = X _L −X _D −X _T
Is calculated by the control device 30.

(Method of measuring the distance _{X L)}
Next, a method of measuring the distance X _L with reference to (b) of FIG. The xyθ stage 12 is moved until the target substrate observing means 14A and the donor substrate observing means 14B are in an opposing relationship. Xyθ stage 12 of the coordinates after the movement (moving distance) is _{X L.} Note that the substrate observing means 14A and 14B are not removed from the vacuum chamber 11, so that the distance between the substrate observing means 14A and 14B is not shifted. Thus, X _L, it is sufficient to measure only advance once.

(Another method for measuring the distance _{X L)}
6 and 7 show another method for measuring the distance _{X L} between the substrate observation means 14A, 14B. First, as shown in FIG. 6A, after placing the dummy donor substrate 20 on the xyθ stage 12 and positioning the xyθ stage 12 at the origin, the z stage 13 is lowered to press the target substrate 15 against the donor substrate 20. To do.

Next, when the z stage 13 is raised as shown in FIG. 6B, the donor substrate 20 has the press contact marks 21 formed on the target substrate 15 as shown in FIG. 17D (here, four thin film patterns 17A to 17D are formed on the donor substrate 20). In this measurement method, X _L is calculated as X _L1 + X _L2 = X _L by measuring distances X _L1 and X _L2 shown in FIG. X _L1 and X _L2 are measured as follows.

First, as shown in FIG. 6D, the control of the control device 30 is performed until a specific portion of the press-contact mark 21 shown in FIG. Then, the xyθ stage 12 is moved. Coordinates (moving distance) is _{X L1} at this time. Similarly, the xyθ stage 12 is moved until the left side portion of the target substrate 15 is projected on the monitor 19 of the target substrate observation means 14A. Coordinates of this time (moving distance), and _{X L2} shown in FIG. From the movement distances X _L1 and X _L2 , the movement distance X _L of the xyθ stage 12 can be calculated by X _L1 + X _L2 .

Measuring method of the distance between the above-mentioned substrate observation means 14A, 14B are merely an example, and as long as the method the distance X _L can be measured, may be used any method.

(Distance _X D, measurement method of _{X T)}
(A) of FIG. 8 illustrates a method of measuring the distance _{X D.} The xyθ stage 12 is moved to the left until a specific portion of the thin film pattern 17A, for example, the left portion is projected on the monitor 19 of the donor substrate observation means 14B. Coordinates of xyθ stage 12 at this time (moving distance), and _{X D.}

(B) in FIG. 8 illustrates a method of measuring the distance _{X T.} The xyθ stage 12 is moved to the left until the left portion of the target substrate 15 is projected on the monitor 19 of the target substrate observation means 14A. Coordinates of xyθ stage 12 at this time (moving distance), and _{X T.}

The distance X _L between the substrate observation means 14A and 14B measured as described above, the distance X _D between the left side of the thin film pattern 17A and the donor substrate observation means 14B, and the distance between the left side of the target substrate 15 and the target substrate observation means 14A. based on the distance X _T, the relative distance ΔX of the thin film pattern 17A and the target substrate 15 is calculated by the control device 30, by moving only the relative distance ΔX to xyθ stage 12 from the origin position of the target substrate 15 and the donor substrate 18 Can be combined.

When the distance _XL is measured using the dummy donor substrate 20, the dummy donor substrate 20 is then replaced with the regular donor substrate 18.

(Effect of the second embodiment)
According to the second embodiment, the thin film pattern of the donor substrates 18 and 20 and the horizontal relative position of the target substrate 15 are individually observed by the target substrate observation unit 14A and the donor substrate observation unit 14B for each stack. Therefore, even if there is an attachment error between the target substrate 15 and the donor substrate 18 or a deviation occurs in the attachment position of the target substrate 15 and the donor substrate 18 in the stacking process, the microstructure is increased. It can be manufactured with high accuracy and the product yield is improved.

  In the second embodiment, the target substrate observation unit 14A is attached to the xyθ stage 12, but another stage may be attached to the target substrate observation unit 14A. In addition, although the alignment is performed with reference to the left portion as a specific portion of the thin film pattern 17A or the target substrate 15, the present invention is not limited to this, and the right portion may be used as a reference, or a separately prepared alignment mark may be used as a reference. Good.

[Third Embodiment]
FIG. 9 shows a microstructure manufacturing apparatus according to the third embodiment of the present invention. The third embodiment is different from the second embodiment in that the z stage 13 is an xyz stage 22 that can move in the x and y directions, and the target substrate observation means 14A is separated from the xyθ stage 12 to be in the vacuum chamber 11. The point which installed in is different.

  FIG. 10 shows an alignment method in the third embodiment. The alignment method of the target substrate 15 and donor substrate 18 in the present embodiment is basically the same as that in the second embodiment. Here, the case where the thin film pattern 17A on the donor substrate 18 is aligned with the target substrate 15 and alignment in the x direction will be described.

  FIG. 10A shows the positional relationship of each component when the xyθ stage 12 and the xyz stage 22 are both located at the origin. Also in the present embodiment, in order to align the thin film pattern 17A and the target substrate 15 as in the second embodiment, it is necessary to grasp the relative distance ΔX between them.

In order to grasp the relative distance ΔX, the distance X _L between the substrate observation means 14A and 14B, the distance X _D between the left side of the thin film pattern 17A and the donor substrate observation means 14B, the left side portion of the target substrate 15 and the target substrate observation means the distance _{X T} between 14A is measured by the controller 30, on the basis of these measured values to calculate the ΔX ₌ X L _-X D _{-X T} by the control device 30. Here, the distance _XL is measured by providing the pressure contact mark 21 as described in the second embodiment. _XD is measured in the same manner as in the second embodiment.

(B) of FIG. 10 illustrates a method of measuring the distance _{X T.} The xyz stage 22 is moved until a specific portion of the target substrate 15, for example, the left portion is projected on the monitor 19 of the target substrate observation means 14 </ b> A. Coordinates of xyz stage 22 at this time (moving distance) is _{X T.}

As described above, by measuring the distance X _L between the substrates observation _means, the distance X _D between the left and the donor substrate observing means 14B of the thin film pattern _17A, the distance X _T between the left of the target substrate 15 and the target substrate observing means 14A Based on these, ΔX is calculated by the control device 30, and the target substrate 15 and the donor substrate 18 are aligned by moving the xyθ stage 12 by ΔX from the origin.

(Effect of the third embodiment)
According to the third embodiment, the same effect as in the second embodiment can be obtained. In the third embodiment, as in the second embodiment, the alignment is performed with reference to the left portion of the thin film pattern 17A and the target substrate 15. However, the present invention is not limited to this, and the right portion is used as a reference. Alternatively, a separately prepared alignment mark may be used as a reference.

[Other embodiments]
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. Moreover, it is possible to arbitrarily combine the constituent elements of each embodiment without departing from the scope of the present invention.

  For example, a combination of the second embodiment and the third embodiment may be configured such that the stage to which the target substrate observation unit 14A and the target substrate 15 are attached both moves in a horizontal plane. Further, the process from the observation by the observation means 14 to the alignment may be automated.

It is sectional drawing which shows the microstructure manufacturing apparatus which concerns on the 1st Embodiment of this invention. It is a block diagram which shows the structure of the control apparatus of the micro structure manufacturing apparatus of FIG. 1A and 1B show images displayed on the monitor by the observation means of FIG. 1, in which FIG. 1A is a screen view in which a positional deviation occurs between the target substrate and the donor substrate, and FIG. It is a screen figure when it is made. It is a block diagram of the microstructure manufacturing apparatus which concerns on the 2nd Embodiment of this invention. It is an explanatory view showing a method of measuring the distance X _T between the target substrate and the target substrate observing means in the microstructure manufacturing apparatus of FIG. In the second embodiment, it is an explanatory diagram showing another method for measuring the distance X _L between the observation means. It is an explanatory view showing a movement distance X _L2 of xyθ stage in another measuring method of the second embodiment. It is explanatory drawing which shows the measuring method of the movement distance of xy (theta) stage. It is a block diagram of the microstructure manufacturing apparatus which concerns on the 3rd Embodiment of this invention. It is explanatory drawing which shows the alignment method in 3rd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Microstructure manufacturing apparatus 11 Vacuum chamber 12 xy (theta) stage 12a x-axis motor 12b x-axis position detection part 12c y-axis motor 12d y-axis position detection part 12e (theta) motor 12f (theta) position detection part 13 z stage 13a z-axis motor 13b z-axis Position detection unit 14 Observation means 14A Target substrate observation means 14B Donor substrate observation means 15 Target substrate 15a Transfer surface 16 Si wafers 17A and 17B Thin film pattern 18 Donor substrate 19 Monitor 20 Dummy donor substrate 21 Pressure contact mark 22 xyz stage 30 Control device 31 CPU
32 Memory 33 Vacuum pump 34 FAB processor 36 Vacuum gauge X _D , _XT movement distance X _L Distance between substrate observation means X _L1 , _{XL 2} movement distance ΔX Relative distance

Claims (8)

A first step of mounting a donor substrate carrying a plurality of thin film patterns on a first stage and mounting a target substrate on a second stage disposed opposite the first stage;
A second step of detecting a horizontal relative position of the donor substrate and the target substrate mounted on the first and second stages;
Based on the detection result of the second step, the donor substrate and the target substrate are relatively moved, and the donor substrate and the target substrate are horizontally positioned, pressed, and separated from each other. A third step of transferring the thin film pattern onto the target substrate,
The second step, the surface of the donor substrate was observed by the donor substrate observation means, by observing the target substrate observing means the surface of the target substrate, when pressed against the target substrate and the donor substrate A method for manufacturing a microstructure, comprising: observing a pressure contact mark and detecting a horizontal relative position of the donor substrate and the target substrate at a position where the donor substrate and the target substrate are in pressure contact.   2. The microstructure according to claim 1, wherein in the second step, a relative distance ΔX in the horizontal direction between the target substrate and the thin film pattern to be transferred is detected as the relative position in the horizontal direction. Body manufacturing method. The second step includes a distance XL between the donor substrate observation unit and the target substrate observation unit, a distance XD between a specific portion of the thin film pattern to be transferred and the donor substrate observation unit, and the target substrate The distance XT between the specific portion and the target substrate observation means is measured, and the horizontal relative distance ΔX between the target substrate and the thin film pattern to be transferred is calculated by ΔX = XL−XD−XT. The method for manufacturing a microstructure according to claim 1 , wherein:   2. The method for manufacturing a microstructure according to claim 1, wherein the second and third steps are performed each time the thin film pattern is stacked on the target substrate. A first stage to which a donor substrate carrying a plurality of thin film patterns is attached;
A second stage to which a target substrate is attached;
A donor substrate observation means for observing the surface of the donor substrate;
A target substrate observing means for observing the surface of the target substrate, provided in a different location from the donor substrate observing means;
Detecting means for detecting a horizontal relative position of the donor substrate and the target substrate mounted on the first and second stages;
The plurality of thin films on the donor substrate are controlled by controlling the first and second stages based on a detection result by the detection unit, and performing horizontal positioning, pressure contact and separation between the donor substrate and the target substrate. A controller for transferring the pattern onto the target substrate,
The detecting device, the donor substrate observation means and the said target substrate and the donor substrate on the basis of the observations by the target substrate observing means to observe the pressure marks when the pressure contact between the donor substrate and the target substrate is pressed An apparatus for manufacturing a microstructure, wherein a horizontal relative position of the donor substrate and the target substrate at a position to be detected is detected. The donor substrate observing means and the target substrate observing means are provided on one of the first and second stages that moves in the horizontal direction, and the other is provided in a place where the other does not move. 5. The manufacturing apparatus of the microstructure according to 5 . 6. The microstructure manufacturing apparatus according to claim 5 , wherein the donor substrate observing unit and the target substrate observing unit are provided at a place where they do not move together. 6. The microstructure manufacturing apparatus according to claim 5 , wherein the donor substrate observation unit and the target substrate observation unit are SEMs.