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JP4884128B2 - Method and apparatus for removing conductive metal oxide thin film - Google Patents
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JP4884128B2 - Method and apparatus for removing conductive metal oxide thin film - Google Patents

Method and apparatus for removing conductive metal oxide thin film Download PDF

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JP4884128B2
JP4884128B2 JP2006217100A JP2006217100A JP4884128B2 JP 4884128 B2 JP4884128 B2 JP 4884128B2 JP 2006217100 A JP2006217100 A JP 2006217100A JP 2006217100 A JP2006217100 A JP 2006217100A JP 4884128 B2 JP4884128 B2 JP 4884128B2
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剛 杉生
和之 砂山
孝信 椙本
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Kanadevia Corp
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Hitachi Zosen Corp
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本発明は、例えばスパッタ蒸着などにより基材に形成された導電性金属酸化物薄膜を、再利用が可能なように除去する方法及びその方法を実施する装置に関するものである。   The present invention relates to a method for removing a conductive metal oxide thin film formed on a substrate by, for example, sputter deposition so that it can be reused, and an apparatus for carrying out the method.

例えばITO(インジウムとスズの酸化物で、透明導電性を有する膜)を形成した高機能ガラス基板は、光学的性能(透過率等)や機械的性能(平坦度等)に優れており、例えばフラットパネルディスプレイに用いられる。しかしながら、この高機能ガラス基板は高価であるため、その表面に形成するITOが品質管理基準を満足しない場合には、そのITOを除去して再利用することで、コストの低減を図っている。   For example, a high-performance glass substrate on which ITO (a film having transparent conductivity with an oxide of indium and tin) is excellent in optical performance (such as transmittance) and mechanical performance (such as flatness). Used for flat panel displays. However, since this high-performance glass substrate is expensive, when the ITO formed on the surface does not satisfy the quality control standard, the ITO is removed and reused to reduce the cost.

このITOなどの導電性金属酸化物薄膜を除去する方法として、機械的擦過により除去する方法や、化学エッチングにより除去する方法がある。このうち前者の方法は、図10に示すように、被加工物1の表面に形成した導電性金属酸化物薄膜1aを研摩ブラシ2により擦過することで除去するものである。   As a method of removing the conductive metal oxide thin film such as ITO, there are a method of removing by mechanical abrasion and a method of removing by chemical etching. Of these methods, the former method is to remove the conductive metal oxide thin film 1 a formed on the surface of the workpiece 1 by rubbing with a polishing brush 2 as shown in FIG. 10.

また、後者の方法は、図11に示すように、導電性金属酸化物薄膜1aを化学反応的に溶解させる化学液3に被加工物1を浸漬することで、その表面に形成した導電性金属酸化物薄膜1aを除去するものである(例えば特許文献1,2)。
特開平6−321581号公報 特開平9−86968号公報
In the latter method, as shown in FIG. 11, the conductive metal formed on the surface of the workpiece 1 is immersed in a chemical solution 3 that chemically dissolves the conductive metal oxide thin film 1a. The oxide thin film 1a is removed (for example, Patent Documents 1 and 2).
JP-A-6-321581 JP-A-9-86968

しかしながら、機械的擦過によって除去する方法は、研摩ブラシを擦りつけることから、被加工物の表面に擦過痕(疵)や応力変形を生じさせる場合がある。擦過痕が生じた場合、板のままでのガラス基材の再利用ができなくなる。また、対象とする被加工物がフラットパネルディスプレイの場合、ガラス基板のガラス厚みが0.5mm程度であるため、接触方式の機械的擦過では破損する可能性がある。従って、微妙なブラシの圧力調整が必要で、完全に剥離するためには長時間を要する。   However, since the method of removing by mechanical rubbing rubs the polishing brush, there are cases where rubbing marks (wrinkles) and stress deformation occur on the surface of the workpiece. When scratch marks are generated, it becomes impossible to reuse the glass substrate as it is. Moreover, when the object to be processed is a flat panel display, the glass thickness of the glass substrate is about 0.5 mm. Therefore, delicate pressure adjustment of the brush is necessary, and it takes a long time to completely peel off.

一方、化学エッチングによって除去する方法は、強酸や強アルカリの化学液を使用するので、基板表面に化学的応力が発生し、基板表面に変質層を生じさせる場合がある。また、取扱いに十分な注意を払う必要があり、作業性が悪くなるばかりでなく、使用後の電解液を廃液処理する必要がある。また、希少金属の回収には、別途抽出作業を必要とするために非常に不経済である。   On the other hand, the method of removing by chemical etching uses a strong acid or strong alkali chemical solution, so that chemical stress is generated on the substrate surface, and an altered layer may be formed on the substrate surface. In addition, it is necessary to pay sufficient attention to handling, not only the workability is deteriorated, but also the electrolytic solution after use needs to be treated as a waste solution. Also, the collection of rare metals is very uneconomical because it requires a separate extraction operation.

本発明が解決しようとする問題点は、機械的擦過による方法では、擦過痕や応力変形が生じて基材を再利用できなくなり、また、ブラシの微妙な圧力調整が必要で完全剥離に長時間を要するという点、化学エッチングによる方法では、基板表面に変質層を生じさせる場合があり、また作業性が悪くなるばかりか、使用後の電解液を廃液処理する必要があり、しかも、希少金属の回収に別途抽出作業が必要で、不経済であるという点である。   The problems to be solved by the present invention are that mechanical scratching causes scratch marks and stress deformation, making it impossible to reuse the substrate, and delicate pressure adjustment of the brush is necessary, and complete peeling takes a long time. In the method using chemical etching, a deteriorated layer may be formed on the surface of the substrate, and workability is deteriorated. In addition, it is necessary to dispose the used electrolytic solution as a waste liquid. This requires that a separate extraction operation is required for collection, which is uneconomical.

本発明の導電性金属酸化物薄膜の除去方法は、
精密な位置制御を必要とすることなく、ほぼ全域に亘って導電性金属酸化物薄膜を効率良く除去するために、
基材との相対移動方向に、基材の表面に形成された導電性金属酸化物薄膜に対向すべく、正電極と絶縁体と負電極を順に配置し、
このうちの負電極を、基材表面の導電性金属酸化物薄膜に接触するように位置させ、かつ、前記正電極及び負電極と、基材表面の導電性金属酸化物薄膜間に電解液を介在させた状態で、前記正電極と負電極に電圧を印加して、
前記正電極及び負電極と基材とを相対移動させることで、前記基材表面の導電性金属酸化物薄膜を還元反応により除去する導電性金属酸化物薄膜の除去方法において、
前記正電極から負電極と反対の方向に向けて電解液を供給することで、前記還元反応により発生した基材表面の気泡を除去することを最も主要な特徴としている。
The method for removing the conductive metal oxide thin film of the present invention comprises:
In order to efficiently remove the conductive metal oxide thin film over almost the entire area without requiring precise position control,
In order to face the conductive metal oxide thin film formed on the surface of the base material in the direction of relative movement with the base material, a positive electrode, an insulator, and a negative electrode are arranged in order,
The negative electrode is positioned so as to be in contact with the conductive metal oxide thin film on the surface of the base material, and the electrolyte solution is placed between the positive electrode and the negative electrode and the conductive metal oxide thin film on the base material surface. In the interposed state, apply a voltage to the positive electrode and the negative electrode,
In the method for removing the conductive metal oxide thin film, by removing the conductive metal oxide thin film on the surface of the base material by a reduction reaction by relatively moving the positive electrode and the negative electrode and the base material,
The main feature is to remove bubbles on the surface of the base material generated by the reduction reaction by supplying an electrolytic solution from the positive electrode in a direction opposite to the negative electrode.

本発明の導電性金属酸化物薄膜の除去方法では、基材表面の導電性金属酸化物に負電極を接触させることで、正電極直下の導電性金属酸化物表面を負電極化し、その負電極と正電極間の電解液を電気分解することによって、正電極の表面にOH、導電性金属酸化物表面にHを発生させ、発生したHによって導電性酸化物表面を還元させる。 In the method for removing a conductive metal oxide thin film of the present invention, a negative electrode is brought into contact with the conductive metal oxide on the surface of the base material, thereby converting the surface of the conductive metal oxide immediately below the positive electrode into a negative electrode. Electrolysis of the electrolyte solution between the positive electrode and the positive electrode generates OH − on the surface of the positive electrode and H + on the surface of the conductive metal oxide, and the conductive oxide surface is reduced by the generated H + .

その際、発生したHが電解液によって未加工の基材上に流され、これから還元される導電性金属酸化物薄膜を部分的に還元してしまうことで、導電性を阻害し、導電性金属酸化物が綺麗に還元されないことがある。 At that time, the generated H + is flowed on the raw substrate by the electrolytic solution, and the conductive metal oxide thin film to be reduced is partially reduced, thereby inhibiting the conductivity and the conductivity. Metal oxide may not be reduced cleanly.

しかしながら、本発明では、正電極から負電極と反対の方向に向けて電解液を供給することで、発生したH等の泡を積極的に還元が完了した基材側に排除するので、前記のような問題は発生しない。 However, in the present invention, by supplying the electrolyte from the positive electrode in the direction opposite to the negative electrode, the generated H + and the like bubbles are positively excluded to the substrate side where the reduction has been completed. Such a problem does not occur.

本発明において、正電極から負電極と反対の方向に向けた電解液の供給は、負電極に形成した櫛歯状部又は複数の孔部を通って行なう方法でも、正電極と負電極間より行なう方法でも良い。   In the present invention, the supply of the electrolyte solution from the positive electrode in the direction opposite to the negative electrode can be performed between the positive electrode and the negative electrode even by a method in which the electrolyte solution passes through the comb-like portion or the plurality of holes formed in the negative electrode. The method of doing may be used.

以上の本発明において、電解液としては、抵抗率が102Ω・cmから106Ω・cmのものを使用することで、基材上に形成された導電性金属を効率良く除去することが可能になる。 In the present invention described above, the electrolytic solution having a resistivity of 10 2 Ω · cm to 10 6 Ω · cm can be used to efficiently remove the conductive metal formed on the substrate. It becomes possible.

本発明の導電性金属酸化物薄膜の除去方法は、
基材との相対移動方向に、基材の表面に形成された導電性金属酸化物薄膜に対向し、かつ負電極のみが基板と接触するように、順に配置された正電極、絶縁体及び負電極と、
前記正電極及び負電極と、基材表面の導電性金属酸化物薄膜間に電解液を介在させるべく、前記正電極から負電極と反対の方向に向けて電解液を供給する電解液供給手段と、
前記正電極と負電極に電圧を印加する電源と、
前記正電極及び負電極と基材との相対移動手段を備え、
前記供給された電解液により、前記還元反応によって発生した基材表面の気泡を除去するようにした本発明の導電性金属酸化物薄膜の除去装置を使用することによって実施できる。
The method for removing the conductive metal oxide thin film of the present invention comprises:
A positive electrode, an insulator, and a negative electrode arranged in order so as to face the conductive metal oxide thin film formed on the surface of the base material in the direction of relative movement with the base material and only the negative electrode is in contact with the substrate. Electrodes,
An electrolyte supply means for supplying an electrolyte solution from the positive electrode in a direction opposite to the negative electrode so as to interpose the electrolyte solution between the positive electrode and the negative electrode and the conductive metal oxide thin film on the surface of the substrate; ,
A power source for applying a voltage to the positive electrode and the negative electrode;
Comprising a relative movement means between the positive electrode and the negative electrode and the substrate;
This can be done by using the apparatus for removing a conductive metal oxide thin film of the present invention in which bubbles on the surface of the substrate generated by the reduction reaction are removed by the supplied electrolytic solution.

本発明の導電性金属酸化物薄膜の除去装置における電解液供給手段は、負電極の正電極と反対の位置に、正電極に向けて電解液を供給する電解液供給ノズルを設置すると共に、負電極の電解液中に浸漬する部分に櫛歯状部又は複数の孔部を設けたものでも、正電極と負電極間に電解液供給ノズルを設けたものでも良い。   The electrolytic solution supply means in the conductive metal oxide thin film removing apparatus of the present invention is provided with an electrolytic solution supply nozzle for supplying an electrolytic solution toward the positive electrode at a position opposite to the positive electrode of the negative electrode, and a negative electrode. The part of the electrode immersed in the electrolytic solution may be provided with a comb-like portion or a plurality of holes, or may be provided with an electrolytic solution supply nozzle between the positive electrode and the negative electrode.

本発明の導電性金属酸化物薄膜の除去装置において、前記順に配置された正電極、絶縁体及び負電極を、基材との相対移動方向に対して傾けて配置した場合には、より広範囲にわたって導電性金属酸化物薄膜を除去することができる。   In the apparatus for removing a conductive metal oxide thin film of the present invention, when the positive electrode, the insulator, and the negative electrode arranged in this order are arranged to be inclined with respect to the relative movement direction with respect to the base material, a wider range is obtained. The conductive metal oxide thin film can be removed.

本発明では、正電極から負電極と反対の方向に向けて電解液を供給して還元反応により発生した基材表面の気泡を除去するので、正電極と負電極との設置間隔を短くでき、基材の後端部に未還元のまま残留する導電性金属酸化物薄膜を減少できる。また、加工速度を速くすることもできる。   In the present invention, since the electrolyte solution is supplied from the positive electrode in the direction opposite to the negative electrode to remove the bubbles on the surface of the substrate generated by the reduction reaction, the installation interval between the positive electrode and the negative electrode can be shortened, The conductive metal oxide thin film remaining unreduced at the rear end of the substrate can be reduced. In addition, the processing speed can be increased.

また、強酸や強アルカリの化学液を使用しないので、環境負荷も低減でき、基材を始めとする希少金属などの資源サイクルも可能になって、経済的にも有利である。   Further, since no strong acid or strong alkali chemical solution is used, the environmental load can be reduced, and resource cycles such as rare metals such as base materials can be realized, which is economically advantageous.

以下、本発明の基本原理を、図1を用いて説明した後、本発明を実施するための最良の形態と共に各種の形態を図2〜図9を用いて詳細に説明する。
本発明は、できるだけ基材への疵や応力変形などを残さない加工法で、かつ、強酸や強アルカリを使用しない導電性金属酸化物薄膜の除去方法である。
Hereinafter, the basic principle of the present invention will be described with reference to FIG. 1, and various embodiments will be described in detail with reference to FIGS. 2 to 9 together with the best mode for carrying out the present invention.
The present invention is a processing method that leaves as little wrinkles and stress deformation on a substrate as possible, and a method for removing a conductive metal oxide thin film that does not use strong acid or strong alkali.

図1において、14は厚さが数mm程度の金属製の正電極、15は厚さが0.1〜数mmの金属製の負電極で、これらの電極14,15は絶縁物や導電物などの基材(例えばガラス)11の表面に形成した導電性金属酸化物薄膜(例えばITO)12と対向すべく配置され、直流電圧電源16によって印加されている。なお、17は正電極14と負電極15の間に設置された絶縁体(例えば厚みが2mm程度のゴム)である。   In FIG. 1, 14 is a metal positive electrode having a thickness of about several millimeters, 15 is a metal negative electrode having a thickness of 0.1 to several millimeters, and these electrodes 14 and 15 are insulators or conductors. The conductive metal oxide thin film (for example, ITO) 12 formed on the surface of the base material (for example, glass) 11 is disposed so as to face the substrate, and is applied by the DC voltage power supply 16. Reference numeral 17 denotes an insulator (for example, rubber having a thickness of about 2 mm) disposed between the positive electrode 14 and the negative electrode 15.

そして、正電極14や負電極15の一部は電解液13中に浸漬され、かつ負電極15は基材11表面の導電性金属酸化物薄膜12に接触させている。このようにすることで、正電極14の直下の導電性金属酸化物薄膜12の表面を負電極化し、その負電極と正電極14間の電解液13を電気分解することによって、正電極14の表面にOH、導電性金属酸化物薄膜12の表面にHを発生させ、発生したHによって導電性金属酸化物薄膜12の表面を還元させて除去するのである。 A part of the positive electrode 14 and the negative electrode 15 is immersed in the electrolytic solution 13, and the negative electrode 15 is in contact with the conductive metal oxide thin film 12 on the surface of the substrate 11. In this way, the surface of the conductive metal oxide thin film 12 immediately below the positive electrode 14 is converted into a negative electrode, and the electrolytic solution 13 between the negative electrode and the positive electrode 14 is electrolyzed. OH is generated on the surface, H + is generated on the surface of the conductive metal oxide thin film 12, and the surface of the conductive metal oxide thin film 12 is reduced and removed by the generated H + .

しかしながら、このような除去方法では、基材11の移動に伴う電解液13によって、発生したHが未加工の基材11上に流され、これから還元される導電性金属酸化物薄膜12を部分的に還元してしまうので、導電性が阻害され、導電性金属酸化物薄膜12が綺麗に還元されないことがある。 However, in such a removal method, the electrolytic metal 13 accompanying the movement of the base material 11 causes the generated H + to flow on the raw base material 11, and the conductive metal oxide thin film 12 to be reduced is partially removed. Therefore, the conductivity is hindered, and the conductive metal oxide thin film 12 may not be reduced cleanly.

そこで、本発明では、正電極14から負電極15と反対の方向に向けて電解液13を供給することで、前記還元反応により発生した導電性金属酸化物薄膜12の表面に発生したHの気泡を、還元が完了した側に押し流して積極的に排除するようにしているのである。 Therefore, in the present invention, by supplying the electrolytic solution 13 from the positive electrode 14 in the direction opposite to the negative electrode 15, the H + generated on the surface of the conductive metal oxide thin film 12 generated by the reduction reaction is reduced. The air bubbles are pushed out to the side where the reduction is completed and actively removed.

この正電極14から負電極15と反対の方向に向けて電解液13を供給する手段としては、例えば図2に示したように、負電極15の正電極14と反対の位置に、正電極14に向けて電解液13を供給する電解液供給ノズル18を設置する。そして、負電極15の電解液13中に浸漬する部分に、図3に示したように櫛歯状部15aを設けるか、図4に示したような複数の孔部15bを設ける。櫛歯状部15a又は複数の孔部15bは、正電極14に向けて電解液13が均一に流れるように配置される。また、必要に応じて、Hの気泡が発生し易い箇所に重点的に電解液13を供給すべく、櫛歯状部15a又は複数の孔部15bの配置や大きさなどを適宜調整する。 As means for supplying the electrolytic solution 13 from the positive electrode 14 in the direction opposite to the negative electrode 15, for example, as shown in FIG. 2, the positive electrode 14 is positioned at a position opposite to the positive electrode 14 of the negative electrode 15. An electrolytic solution supply nozzle 18 for supplying the electrolytic solution 13 is installed. And the comb-tooth shaped part 15a is provided in the part immersed in the electrolyte solution 13 of the negative electrode 15 as shown in FIG. 3, or the several hole 15b as shown in FIG. 4 is provided. The comb-like portion 15 a or the plurality of holes 15 b are arranged so that the electrolyte solution 13 flows uniformly toward the positive electrode 14. Further, if necessary, the arrangement and size of the comb-like portion 15a or the plurality of hole portions 15b are appropriately adjusted so that the electrolytic solution 13 is supplied mainly to a place where H + bubbles are likely to be generated.

このような構成を採用することで、前記電解液供給ノズル18から供給した電解液13は、櫛歯状部15a又は複数の孔部15bを通って、正電極14から負電極15と反対の方向(基材11の移動方向と同方向)に向けて流れ、前記還元反応により導電性金属酸化物薄膜12の表面に発生したHの気泡を還元が完了した側に押し流し、正電極14と負電極15間に位置する導電性金属酸化物薄膜12を部分的に還元することがなくなる。 By adopting such a configuration, the electrolytic solution 13 supplied from the electrolytic solution supply nozzle 18 passes through the comb-like portion 15a or the plurality of holes 15b, and is in the direction opposite to the negative electrode 15 from the positive electrode 14. H + bubbles generated on the surface of the conductive metal oxide thin film 12 by the reduction reaction are pushed to the side where the reduction is completed, and the positive electrode 14 and the negative electrode 14 are negative. The conductive metal oxide thin film 12 positioned between the electrodes 15 is not partially reduced.

従って、正電極14と負電極15を近づけて設置することができ、基材11の移動方向後端部に未還元のまま残留する導電性金属酸化物薄膜12の前記移動方向の幅が減少し、ほぼ全域に亘って導電性金属酸化物薄膜12を除去することができるようになる。その際、精密な位置制御を必要とすることも無い。   Therefore, the positive electrode 14 and the negative electrode 15 can be placed close to each other, and the width in the moving direction of the conductive metal oxide thin film 12 remaining unreduced at the rear end portion in the moving direction of the substrate 11 is reduced. The conductive metal oxide thin film 12 can be removed over almost the entire area. At that time, precise position control is not required.

また、電解液13が基材11の移動方向と同方向に向けて流れ、前記還元反応により導電性金属酸化物薄膜12の表面に発生したHの気泡を還元が完了した側に押し流すので、基材11の移動速度を速くしても、前記Hが未還元の基材11上に流されることはない。 In addition, since the electrolyte 13 flows in the same direction as the movement direction of the base material 11, the H + bubbles generated on the surface of the conductive metal oxide thin film 12 by the reduction reaction are pushed to the side where the reduction is completed. Even if the moving speed of the base material 11 is increased, the H + is not flowed onto the unreduced base material 11.

図5〜図7は、厚さが1mm〜十数mmの金属製の正電極14と、厚さが0.1mm〜数mmの金属製の負電極15の間(数mm〜数十mm)より、正電極14から負電極15と反対の方向に向けて電解液13を供給する手段を示すものである。   5 to 7 show a gap between a metal positive electrode 14 having a thickness of 1 mm to several tens of mm and a metal negative electrode 15 having a thickness of 0.1 mm to several mm (several mm to several tens mm). Thus, means for supplying the electrolytic solution 13 from the positive electrode 14 in the direction opposite to the negative electrode 15 is shown.

このうち、図5は電解液供給ノズル18によって、正電極14と厚さが0.2mm〜数mmの樹脂やゴム製の絶縁体17の間に、基材11の全幅に亘って流量が均一となるように電解液13を供給し、正電極14と導電性金属酸化物薄膜12の間(1〜3mm)に電解液13を流すのである。   In FIG. 5, the flow rate is uniform over the entire width of the substrate 11 between the positive electrode 14 and the resin or rubber insulator 17 having a thickness of 0.2 mm to several mm by the electrolyte supply nozzle 18. Then, the electrolyte solution 13 is supplied so that the electrolyte solution 13 flows between the positive electrode 14 and the conductive metal oxide thin film 12 (1 to 3 mm).

この図5に示した例によれば、図2に示した例のように負電極15の下を電解液13が通過しないので、負電極15に電解液13通過用の櫛歯状部15aや複数の孔部15bを設ける必要がない。   According to the example shown in FIG. 5, the electrolyte solution 13 does not pass under the negative electrode 15 as in the example shown in FIG. 2, so that the comb-like portion 15 a for passing the electrolyte solution 13 passes through the negative electrode 15. There is no need to provide a plurality of holes 15b.

図6は図5に示した電解液供給ノズル18に代えて、電解液13の流量を基材11の全幅に亘ってより均一とするために箱状の電解液供給ノズル19を用いて電解液13を供給するものである。   6 replaces the electrolyte supply nozzle 18 shown in FIG. 5 with a box-shaped electrolyte supply nozzle 19 in order to make the flow rate of the electrolyte 13 more uniform over the entire width of the substrate 11. 13 is supplied.

この箱状の電解液供給ノズル19は、紙面左右方向の長さが1mm〜数mm程度の箱であり、電解液13の流れを幅方向に均一となすように、箱内部に必要に応じて邪魔板等を設置したものである。   The box-shaped electrolyte supply nozzle 19 is a box having a length of about 1 mm to several mm in the left-right direction on the paper surface. The box-shaped electrolyte supply nozzle 19 is provided inside the box as necessary so that the flow of the electrolyte 13 is uniform in the width direction. A baffle or the like is installed.

但し、箱状の電解液供給ノズル19の厚み分、正電極14と負電極15間の距離が離れてしまうので、箱状の電解液供給ノズル19の下端を正電極14の下端よりも数mm〜数十mm上方に設置することが望ましい。そうすることで、負電極15と絶縁体17の可動範囲が増し、負電極15を図6に示したように積極的に変形させることで、正電極14と負電極15間の間隔を狭くすることができる。   However, since the distance between the positive electrode 14 and the negative electrode 15 is increased by the thickness of the box-shaped electrolyte supply nozzle 19, the lower end of the box-shaped electrolyte supply nozzle 19 is several mm smaller than the lower end of the positive electrode 14. It is desirable to install ~ tens of mm above. By doing so, the movable range of the negative electrode 15 and the insulator 17 is increased, and the negative electrode 15 is actively deformed as shown in FIG. 6, thereby narrowing the interval between the positive electrode 14 and the negative electrode 15. be able to.

図7は図6に示した、正電極14、負電極15、絶縁体17及び箱状の電解液供給ノズル19を、側面から見て数度〜数十度傾けたものである。このように傾斜させて配置した場合には、電解液13の流れがより均一化される。   FIG. 7 shows the positive electrode 14, the negative electrode 15, the insulator 17, and the box-shaped electrolyte supply nozzle 19 shown in FIG. 6 that are inclined several degrees to several tens of degrees when viewed from the side. When arranged so as to be inclined, the flow of the electrolyte solution 13 is made more uniform.

図8は以上説明した正電極14、負電極15、絶縁体17等を、基材11の移動方向に対し、平面から見て数度〜数十度傾けて配置したものである。このようにした場合には、例えば全面に導電性金属酸化物薄膜12が形成された基材11の場合、基材11の一隅に僅かに未還元の導電性金属酸化物薄膜12が残るのみとなり、より広範囲にわたって導電性金属酸化物薄膜12を除去することができる。   In FIG. 8, the positive electrode 14, the negative electrode 15, the insulator 17, and the like described above are arranged with an inclination of several degrees to several tens of degrees when viewed from the plane with respect to the moving direction of the base material 11. In this case, for example, in the case of the base material 11 on which the conductive metal oxide thin film 12 is formed on the entire surface, a slightly unreduced conductive metal oxide thin film 12 remains at one corner of the base material 11. The conductive metal oxide thin film 12 can be removed over a wider range.

以上の本発明では、導電性金属酸化物薄膜12は電解還元処理した後は、金属固体として微粒子化(0.1μm以下)しているので、たとえば図9に示すように、水流ジェット20により還元金属を剥離すれば良い。なお、図9では、補助として柔軟性材21による機械的剥離を併用するものを示している。   In the present invention described above, since the conductive metal oxide thin film 12 is finely divided (0.1 μm or less) as a metal solid after electrolytic reduction treatment, for example, as shown in FIG. What is necessary is just to peel a metal. In addition, in FIG. 9, what uses together mechanical peeling by the flexible material 21 as assistance is shown.

そして、その後は、電解液13とともに除去した還元金属を、電解液捕集パン22を介して回収タンク23に溜め、マイクロバブル発生器24によってマイクロバブルを混入する。これにより、マイクロバブルが核となって金属微粒子がクラスタ化し、フィルタで回収できるようになるので、フィルタ25を通して還元金属を回収する。なお、図9中の26はポンプを示す。   After that, the reduced metal removed together with the electrolytic solution 13 is accumulated in the recovery tank 23 through the electrolytic solution collecting pan 22, and microbubbles are mixed by the microbubble generator 24. As a result, the metal bubbles are clustered using the microbubbles as a nucleus and can be collected by the filter. In addition, 26 in FIG. 9 shows a pump.

以上の説明のように、本発明は、一般に行われている、被加工物に正電圧を印加する電解溶出除去反応ではなく、被加工物に負の電圧を印加する特徴的な加工法である。
なお、ここでの電解反応は導電性金属酸化物薄膜界面のごく微量な領域にH2の発生を生じさせるもので良いため、電流はほとんど必要としない。
As described above, the present invention is a characteristic processing method for applying a negative voltage to a workpiece, not a general electrolytic elution removal reaction for applying a positive voltage to the workpiece, as described above. .
Note that since the electrolytic reaction here may generate H 2 in a very small region at the interface of the conductive metal oxide thin film, little current is required.

従って、使用する電解液13は、一般に用いられる中性塩溶液、または水道水や河川水等に中性塩溶液を混合したものが利用可能であるが、好ましくは、抵抗率が102Ω・cmから106Ω・cm、より好ましくは103Ω・cmから104Ω・cmに調整されたものが良い。 Accordingly, as the electrolytic solution 13 to be used, a generally used neutral salt solution or a mixture of a neutral salt solution in tap water, river water, or the like can be used. Preferably, the resistivity is 10 2 Ω · Those adjusted from cm to 10 6 Ω · cm, more preferably from 10 3 Ω · cm to 10 4 Ω · cm are preferable.

つまり、本発明における電解液13の抵抗率は、正電極14と負電極15間の電解液13の抵抗値と負電極15〜導電性金属酸化物薄膜12〜正電極14間の抵抗値が同程度である必要があり、その範囲は、導電性金属酸化物薄膜12の種類や、正電極14の高さ、正電極14と負電極15間の距離を考慮して、102Ω・cmから106Ω・cmである。電解液13の抵抗率が102Ω・cmより小さいと、導電性金属酸化物薄膜12を通さず、電解液13を通じて正電極14、負電極15間が導通状態になるため、導電性金属酸化物薄膜12における酸化物の還元がほとんど起こらなくなる。また、106Ω・cmより大きいと、導電性が低下し、高電圧を印加しないと酸化物の還元が完全に行われなくなり、経済的に好ましくない。 That is, the resistivity of the electrolytic solution 13 in the present invention is equal to the resistance value of the electrolytic solution 13 between the positive electrode 14 and the negative electrode 15 and the resistance value between the negative electrode 15 to the conductive metal oxide thin film 12 to the positive electrode 14. The range is from 10 2 Ω · cm in consideration of the type of the conductive metal oxide thin film 12, the height of the positive electrode 14, and the distance between the positive electrode 14 and the negative electrode 15. 10 6 Ω · cm. When the resistivity of the electrolytic solution 13 is smaller than 10 2 Ω · cm, the conductive metal oxide thin film 12 is not passed through, and the positive electrode 14 and the negative electrode 15 are brought into conduction through the electrolytic solution 13. The reduction of the oxide in the physical thin film 12 hardly occurs. On the other hand, if it is larger than 10 6 Ω · cm, the conductivity is lowered, and unless a high voltage is applied, the oxide cannot be completely reduced, which is economically undesirable.

このように本発明では、抵抗率の比較的高い電解液13が適していることから、従来、電解液13としては好ましくなかった、水道水や河川水等を用いることができ、経済性および安全性の面においても優れている。   Thus, in the present invention, since the electrolytic solution 13 having a relatively high resistivity is suitable, it is possible to use tap water, river water, etc., which is not preferable as the electrolytic solution 13 conventionally, and is economical and safe. Also excellent in terms of sex.

厚さが0.7mm、大きさが370mm×470mmのガラス基板上に形成した、膜厚が1500×10−10mのITOを、先に説明した図2、図3に示す本発明装置を用いた本発明方法によって除去した。 ITO having a thickness of 1500 × 10 −10 m formed on a glass substrate having a thickness of 0.7 mm and a size of 370 mm × 470 mm is used for the apparatus of the present invention shown in FIGS. It was removed by the inventive method.

ITOの除去に際し、電解液として水道水を使用し、正電極との負電極(電極幅は共に600mm)間に60Vの直流電圧を印加し(電流:1.5A)、被加工材を2m/分で移動させたところ、ガラス基板の後端部に未還元のまま残留するITOの送り方向の幅が1mm(面積では1mm×370mm=370mm2)以下に減少した。 When removing ITO, tap water is used as the electrolyte, a 60 V DC voltage is applied between the positive electrode and the negative electrode (both electrode widths are 600 mm) (current: 1.5 A), and the workpiece is 2 m / When moved in minutes, the width in the feeding direction of ITO remaining unreduced at the rear end of the glass substrate decreased to 1 mm or less (area: 1 mm × 370 mm = 370 mm 2 ).

実施例1において、正電極と負電極等をガラス基板の移動方向に対し、平面から見て30度傾けて配置した場合、ガラス基板の後端部に未還元のまま残留するITOは実施例1の370mm2から1.73mm2に減少した。 In Example 1, when the positive electrode, the negative electrode, and the like are arranged with an inclination of 30 degrees when viewed from the plane with respect to the moving direction of the glass substrate, the ITO remaining unreduced at the rear end of the glass substrate is Example 1. It was reduced from 370mm 2 to 1.73mm 2.

本発明は、負電極15に設ける孔部15bの形状は円形に限らない等、前述の例に限るものではなく、各請求項に記載の技術的思想の範疇内において、適宜実施の形態を変更しても良いことは言うまでもない。   The present invention is not limited to the above-described example, such as the shape of the hole 15b provided in the negative electrode 15 is not limited to a circle, and the embodiment is appropriately changed within the scope of the technical idea described in each claim. Needless to say, you can.

本発明の基本原理を説明する図である。It is a figure explaining the basic principle of this invention. 本発明の第1の例を説明する概略図で側面から見た図である。It is the figure seen from the side in the schematic diagram explaining the 1st example of this invention. 本発明の第1の例に使用する負電極の形状の第1の例を示した図である。It is the figure which showed the 1st example of the shape of the negative electrode used for the 1st example of this invention. 本発明の第1の例に使用する負電極の形状の第2の例を示した図である。It is the figure which showed the 2nd example of the shape of the negative electrode used for the 1st example of this invention. 本発明の第2の例を説明する概略図で側面から見た図である。It is the figure seen from the side in the schematic diagram explaining the 2nd example of this invention. 本発明の第3の例を説明する概略図で側面から見た図である。It is the figure seen from the side in the schematic diagram explaining the 3rd example of this invention. 本発明の第4の例を説明する概略図で側面から見た図である。It is the figure seen from the side in the schematic diagram explaining the 4th example of the present invention. 本発明の第5の例を説明する概略図で平面から見た図である。It is the figure seen from the top in the schematic diagram explaining the 5th example of the present invention. 本発明により導電性金属酸化物薄膜を電解還元処理した後の回収装置の一例を示した図である。It is the figure which showed an example of the collection | recovery apparatus after carrying out the electrolytic reduction process of the electroconductive metal oxide thin film by this invention. 機械的擦過により金属薄膜を除去する方法について説明する図である。It is a figure explaining the method of removing a metal thin film by mechanical abrasion. 化学エッチングにより金属薄膜を除去する方法について説明する図である。It is a figure explaining the method of removing a metal thin film by chemical etching.

符号の説明Explanation of symbols

11 基材
12 導電性金属酸化物薄膜
13 電解液
14 正電極
15 負電極
15a 櫛歯状部
15b 孔部
16 直流電圧電源
17 絶縁体
18 電解液供給ノズル
19 箱状の電解液供給ノズル
DESCRIPTION OF SYMBOLS 11 Base material 12 Conductive metal oxide thin film 13 Electrolytic solution 14 Positive electrode 15 Negative electrode 15a Comb-like part 15b Hole part 16 DC voltage power supply 17 Insulator 18 Electrolyte supply nozzle 19 Box-shaped electrolyte supply nozzle

Claims (8)

基材との相対移動方向に、基材の表面に形成された導電性金属酸化物薄膜に対向すべく、正電極と絶縁体と負電極を順に配置し、
このうちの負電極を、基材表面の導電性金属酸化物薄膜に接触するように位置させ、かつ、前記正電極及び負電極と、基材表面の導電性金属酸化物薄膜間に電解液を介在させた状態で、前記正電極と負電極に電圧を印加して、
前記正電極及び負電極と基材とを相対移動させることで、前記基材表面の導電性金属酸化物薄膜を還元反応により除去する導電性金属酸化物薄膜の除去方法において、
前記正電極から負電極と反対の方向に向けて電解液を供給することで、前記還元反応により発生した基材表面の気泡を除去することを特徴とする導電性金属酸化物薄膜の除去方法。
In order to face the conductive metal oxide thin film formed on the surface of the base material in the direction of relative movement with the base material, a positive electrode, an insulator, and a negative electrode are arranged in order,
The negative electrode is positioned so as to be in contact with the conductive metal oxide thin film on the surface of the base material, and the electrolyte solution is placed between the positive electrode and the negative electrode and the conductive metal oxide thin film on the base material surface. In the interposed state, apply a voltage to the positive electrode and the negative electrode,
In the method for removing the conductive metal oxide thin film, by removing the conductive metal oxide thin film on the surface of the base material by a reduction reaction by relatively moving the positive electrode and the negative electrode and the base material,
A method for removing a conductive metal oxide thin film, comprising removing an air bubble generated on the surface of the base material by the reduction reaction by supplying an electrolytic solution from the positive electrode in a direction opposite to the negative electrode.
前記正電極から負電極と反対の方向に向けた電解液の供給は、負電極に形成した櫛歯状部又は複数の孔部を通って行なうことを特徴とする請求項1に記載の導電性金属酸化物薄膜の除去方法。   2. The conductive material according to claim 1, wherein the electrolyte solution is supplied from the positive electrode in a direction opposite to the negative electrode through a comb-like portion or a plurality of holes formed in the negative electrode. Method for removing metal oxide thin film. 前記正電極から負電極と反対の方向に向けた電解液の供給は、正電極と負電極間より行なうことを特徴とする請求項1に記載の導電性金属酸化物薄膜の除去方法。   2. The method for removing a conductive metal oxide thin film according to claim 1, wherein the electrolyte solution is supplied from the positive electrode in a direction opposite to the negative electrode from between the positive electrode and the negative electrode. 前記電解液の抵抗率が、102Ω・cmから106Ω・cmであることを特徴とする請求項1〜3の何れかに記載の導電性酸化物薄膜の除去方法。 The method for removing a conductive oxide thin film according to any one of claims 1 to 3, wherein the resistivity of the electrolytic solution is 10 2 Ω · cm to 10 6 Ω · cm. 請求項1に記載の導電性金属酸化物薄膜の除去方法を実施する装置であって、
基材との相対移動方向に、基材の表面に形成された導電性金属酸化物薄膜に対向し、かつ負電極のみが基板と接触するように、順に配置された正電極、絶縁体及び負電極と、
前記正電極及び負電極と、基材表面の導電性金属酸化物薄膜間に電解液を介在させるべく、前記正電極から負電極と反対の方向に向けて電解液を供給する電解液供給手段と、
前記正電極と負電極に電圧を印加する電源と、
前記正電極及び負電極と基材との相対移動手段を備え、
前記供給された電解液により、前記還元反応によって発生した基材表面の気泡を除去するようにしたことを特徴とする導電性金属酸化物薄膜の除去装置。
An apparatus for performing the method for removing a conductive metal oxide thin film according to claim 1,
A positive electrode, an insulator, and a negative electrode arranged in order so as to face the conductive metal oxide thin film formed on the surface of the base material in the direction of relative movement with the base material and only the negative electrode is in contact with the substrate. Electrodes,
An electrolyte supply means for supplying an electrolyte solution from the positive electrode in a direction opposite to the negative electrode so as to interpose the electrolyte solution between the positive electrode and the negative electrode and the conductive metal oxide thin film on the surface of the substrate; ,
A power source for applying a voltage to the positive electrode and the negative electrode;
Comprising a relative movement means between the positive electrode and the negative electrode and the substrate;
An apparatus for removing a conductive metal oxide thin film, wherein the supplied electrolyte solution removes bubbles on the surface of the base material generated by the reduction reaction.
前記負電極の正電極と反対の位置に、正電極に向けて電解液を供給する電解液供給ノズルを設置すると共に、前記負電極の電解液中に浸漬する部分に櫛歯状部又は複数の孔部を設け、
前記正電極から負電極と反対の方向に向けた電解液の供給を、前記複数の孔部を通って行なうように構成したことを特徴とする請求項5に記載の導電性金属酸化物薄膜の除去装置。
An electrolytic solution supply nozzle that supplies an electrolytic solution toward the positive electrode is installed at a position opposite to the positive electrode of the negative electrode, and a comb-like portion or a plurality of portions are immersed in the portion of the negative electrode immersed in the electrolytic solution Provide a hole,
The conductive metal oxide thin film according to claim 5, wherein the electrolyte solution is supplied from the positive electrode in a direction opposite to the negative electrode through the plurality of holes. Removal device.
前記正電極と負電極間に電解液供給ノズルを設け、
前記正電極から負電極と反対の方向に向けた電解液の供給を、前記電解液供給ノズルによって行なうように構成したことを特徴とする請求項5に記載の導電性金属酸化物薄膜の除去装置。
An electrolyte supply nozzle is provided between the positive electrode and the negative electrode,
6. The apparatus for removing a conductive metal oxide thin film according to claim 5, wherein the electrolytic solution is supplied from the positive electrode in a direction opposite to the negative electrode by the electrolytic solution supply nozzle. .
前記順に配置された正電極、絶縁体及び負電極を、基材との相対移動方向に対して傾けて配置したことを特徴とする請求項5〜7の何れかに記載の導電性金属酸化物薄膜の除去装置。
The conductive metal oxide according to claim 5, wherein the positive electrode, the insulator, and the negative electrode arranged in this order are arranged to be inclined with respect to the relative movement direction with respect to the base material. Thin film removal device.
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JP2010104924A (en) * 2008-10-30 2010-05-13 Hitachi Zosen Corp Method and apparatus of removing minute conductive metal oxide
JP5174622B2 (en) * 2008-11-07 2013-04-03 日立造船株式会社 Recovery of reduced metal from conductive metal oxide, method and equipment for regenerating substrate for liquid crystal
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