JP5035144B2 - Single crystal pulling wire cleaning apparatus and cleaning method thereof - Google Patents

Description

  The present invention relates to a single crystal pulling wire cleaning apparatus and a cleaning method used for pulling and growing a silicon single crystal from a raw material melt in a crucible by the Czochralski method (hereinafter referred to as “CZ method”).

  A silicon single crystal is a material of a silicon wafer used for a semiconductor device, and a single crystal pulling apparatus by a CZ method is widely used for the production thereof.

  FIG. 1 is a longitudinal sectional view showing a configuration of a single crystal pulling apparatus suitable for growing a silicon single crystal by the CZ method. As shown in the figure, the single crystal pulling apparatus is composed of a main chamber 1 and a cylindrical pull chamber 2 coaxially connected to the upper end of the main chamber 1.

  A crucible 3 is arranged in the center of the main chamber 1. The crucible 3 has a double structure, is composed of an inner quartz crucible 3a and an outer graphite crucible 3b, and is fixed to the upper end of a support shaft 4 that can be rotated and lifted. A resistance heating type heater 5 surrounding the crucible 3 is disposed outside the crucible 3, and a heat insulating material 6 is disposed along the inner surface of the main chamber 1 further outside. Above the crucible 3, a cylindrical heat shield 7 is disposed so as to surround the silicon single crystal 17 being pulled up and shield the radiant heat from the raw material melt 16 and the heater 5 in the crucible 3.

  Inside the pull chamber 2, a wire 8 made of tungsten or the like used for pulling a single crystal is suspended from the upper end on the central axis, and a seed crystal holder 9 is attached to the tip of the wire 8 through a seed crystal holder 9. Crystal 10 is retained. Above the pull chamber 2, a wire lifting mechanism 11 that lifts and lowers the wire 8 is disposed. The wire lifting mechanism 11 includes a reel 12 that winds the wire 8, a drive motor 13 that rotates the reel 12, and the like. The The wire 8 can be moved up and down as the reel 12 rotates forward and backward by the power of the drive motor 13. Furthermore, the wire lifting / lowering mechanism 11 can be rotated around the central axis of the pull chamber 2 by a wire rotating mechanism (not shown), and accordingly, the wire 8 can be rotated together with the lifting / lowering.

  In addition, a purge gas introduction port 14 for introducing an inert gas such as Ar (argon) gas is provided in the upper portion of the pull chamber 2, and an internal vacuum pump (not shown) is provided in the lower portion of the main chamber 1. An exhaust port 15 for sucking and exhausting gas is provided.

  When pulling up a single crystal using such a single crystal pulling apparatus, after filling the crucible 3 with polycrystalline silicon as a silicon raw material, the gas is discharged through the exhaust port 15 and the inert gas through the purge gas introducing port 14. As a result, the inside of the main chamber 1 and the pull chamber 2 is brought to a reduced inert gas atmosphere. The silicon raw material is melted in the crucible 3 by heating the heater 5 while continuing the introduction and discharge of the inert gas and maintaining the atmosphere.

  When the raw material melt 16 is formed in the crucible 3, the wire 8 is lowered by the wire lifting mechanism 11, and the seed crystal 10 is immersed in the surface of the raw material melt 16. The crucible 3 is rotated from this state, and the wire 8 is gradually raised by the wire elevating mechanism 11 while the wire 8 is rotated by the wire rotating mechanism. Thereby, the silicon single crystal 17 is grown below the seed crystal 10, and the silicon single crystal 17 having a predetermined shape is pulled up. The pulled silicon single crystal 17 is temporarily stored in the pull chamber 2, and after the pull chamber 2 is separated from the main chamber 1 and retracted, it is cooled and taken out.

  By the way, as the wire is repeatedly used for pulling the single crystal, dust or the like adheres to the surface thereof. If this deposit falls off the wire during pulling of the single crystal, it causes dislocations in the silicon single crystal and may deteriorate the quality of the silicon single crystal.

  For this reason, conventionally, the wire is periodically removed from the wire pulling mechanism of the single crystal pulling apparatus, and the wire is immersed in the cleaning liquid stored in the cleaning tank, thereby cleaning the wire and removing deposits. . However, this method requires a long time because it requires wire removal work and wire attachment work after cleaning. Furthermore, the operation is dangerous because it is performed at a high place above the pull chamber.

  In response to these problems, Patent Document 1 proposes a single crystal pulling apparatus that blows away and removes deposits on the surface of a wire by providing an air nozzle in the pull chamber and blowing air from the air nozzle to the wire.

  However, the single crystal pulling device proposed in the same document relies on mere air blowing to remove the deposits. If deposits enter between the wires constituting the wire, the deposits are removed. It is difficult to do. In particular, when SiO gas generated during single crystal pulling sublimates and the SiO solidified material adheres to the wire, the SiO solidified material that is a deposited material cannot be removed from the wire even by simply blowing air. .

  Furthermore, in the single crystal pulling apparatus proposed in Patent Document 1, the deposits blown off from the wire may adhere to the inner surface of the pull chamber, and this deposit may induce dislocation during the pulling of the single crystal. Absent.

Japanese Patent No. 3975649

  The present invention has been made in view of the above problems, and in the single crystal pulling apparatus for pulling and growing the silicon single crystal from the raw material melt in the crucible by the CZ method, the deposits attached to the single crystal pulling wire. It is an object of the present invention to provide a single crystal pulling wire cleaning device and a cleaning method thereof that can efficiently and reliably remove dislocations and prevent the occurrence of dislocation due to the deposits.

  In order to achieve the above object, a single crystal pulling wire cleaning apparatus according to the present invention includes a main chamber in which a crucible is disposed, a pull chamber that can be separated from an upper end of the main chamber, and a single crystal pulling device. And a wire lifting mechanism for lifting and lowering the wire from the upper end of the pull chamber into the pull chamber, wherein the pull chamber is retracted from the main chamber. In this state, the wire suspended in the pull chamber passes through the insertion holes formed in the upper wall and the bottom wall, and the cleaning liquid is sprayed in a mist toward the wire in the cleaning box. And a nozzle.

  With such a configuration, by spraying the mist-like cleaning liquid onto the wire, the cleaning liquid penetrates between the wires constituting the wire, and not only dust but also SiO solidified matter is lifted from the wire surface as an adhering matter. Furthermore, it is possible to blow off the lifted deposits. In this way, it becomes possible to clean the wire and reliably remove deposits from the wire.

  Moreover, since the spray of the mist-like cleaning liquid performed with respect to the wire is performed in the cleaning box, scattering of the cleaning liquid and deposits can be suppressed by the cleaning box. Thereby, it is possible to suppress the deposits blown off from the wire from being scattered and adhered to the inner surface of the pull chamber, and it is possible to prevent the occurrence of dislocation due to the deposits.

  Furthermore, since the removal of the deposits from the wire can be performed without removing the wire from the single crystal pulling device, the required time can be shortened and the operation can be efficiently performed without a dangerous work at a high place. It becomes possible.

  The cleaning apparatus may include a waste liquid recovery mechanism that recovers the cleaning liquid that has been sprayed and aggregated in the cleaning box.

  In the above cleaning apparatus, it is preferable to include a cleaning box lifting / lowering mechanism that lifts and lowers the cleaning box so that the cleaning box can be easily disposed at an appropriate vertical position such as the lower end or inside of the pull chamber.

  Preferably, the cleaning apparatus includes a positioning member that positions the cleaning box in the horizontal direction with respect to the pull chamber so that the cleaning box can be easily restricted to an appropriate position in the horizontal direction with respect to the pull chamber.

  In the cleaning device, the nozzle includes an air nozzle that blows out air, a diffuser nozzle disposed in front of the air nozzle, and the air nozzle so that the amount of mist-like cleaning liquid sprayed from the nozzle and its spray pressure can be adjusted. A cleaning liquid supply port that opens between the diffuser nozzles and supplies the cleaning liquid is preferable.

  In the cleaning apparatus, alcohol or acetone is preferably used as the cleaning liquid.

  In the above cleaning apparatus, the cleaning box is made of resin so that the wire surface and the inner surface of the pull chamber are not contaminated with metal impurities even if the wire contacts the cleaning box or the cleaning box contacts the inner surface of the pull chamber. It is preferable.

  In the said washing | cleaning apparatus, it is preferable to provide a traveling mechanism so that it can respond to a some single crystal pulling apparatus flexibly.

  In order to achieve the above object, a method for cleaning a single crystal pulling wire according to the present invention includes a main chamber in which a crucible is disposed, a pull chamber that can be separated from the upper end of the main chamber, and a single crystal pulling method. And a wire lifting mechanism that lifts and lowers the wire for pulling from the upper end of the pull chamber into the pull chamber, wherein the pull chamber is the main chamber. The wire suspended in the pull chamber is passed through the cleaning box through insertion holes formed in the upper wall and the bottom wall of the cleaning box, and the wire is lifted by the wire lifting mechanism. The spray of the cleaning liquid is sprayed from the nozzle disposed in the cleaning box toward the wire. And wherein the door.

  Even with such a cleaning method, it is possible to efficiently and surely remove deposits adhering to the single crystal pulling wire as in the above-described cleaning apparatus, and occurrence of dislocation due to the deposits. Can be prevented.

  According to the single crystal pulling wire cleaning apparatus and cleaning method of the present invention, the cleaning liquid is sprayed onto the wire in the form of a mist to lift and blow off deposits such as dust and SiO solidified material from the wire surface. Therefore, it is possible to reliably remove deposits from the wire. Also, since the cleaning box suppresses the scattering of cleaning liquid and deposits, the deposits blown off from the wire can be prevented from scattering and adhering to the inner surface of the pull chamber. Can be prevented. Furthermore, since the deposits can be removed from the wire without removing the wire from the single crystal pulling apparatus, it can be efficiently performed.

  Below, the embodiment is explained in full detail about the washing | cleaning apparatus of the wire for single crystal pulling of this invention, and its washing | cleaning method.

  FIG. 2 is a diagram schematically showing the entire configuration of a single crystal pulling apparatus provided with a wire cleaning apparatus according to an embodiment of the present invention. In this figure, the structure of the single crystal pulling apparatus itself is the same as that shown in FIG. 1, and the same reference numerals are given to the same structure, and overlapping description is omitted as appropriate.

  As shown in FIG. 2, the pull chamber 2 is supported by a support column 18 standing adjacent to the main chamber 1 so as to be pivotable in the horizontal direction via an arm member 19, and swivels around the support column 18. As a result, the main chamber 1 can be disposed at a position connected to the upper end of the main chamber 1 and at a position retracted from the main chamber 1. In FIG. 2, a state where the pull chamber 2 is retracted from the main chamber 1 is indicated by a solid line, and a state where the pull chamber 2 is connected to the main chamber 1 is indicated by a one-dot chain line.

  In the state where the pull chamber 2 is connected to the main chamber 1, the silicon single crystal is pulled and grown. When the pull chamber 2 is retracted from the main chamber 1, the silicon single crystal pulled into the pull chamber 2 is cooled and taken out, and the seed crystal is replaced. Further, in the retracted state, cleaning is performed by using the wire cleaning device 20 to remove deposits attached to the single crystal pulling wire 8.

  The wire cleaning device 20 includes a main body unit 21 and a cleaning unit 22 disposed above the main body unit 21. The cleaning unit 22 can move up and down in the vertical direction with respect to the main unit 21 via an elevator 23 composed of a motor or a cylinder, and is arranged at the lower end of the pull chamber 2 by being raised or inserted into the pull chamber 2. And can be placed up to the top. The main body unit 21 is provided with casters 24 so as to be able to travel integrally with the cleaning unit 22 on the floor G on which the single crystal pulling device is installed. Instead of the caster 24, a motor-driven wheel may be provided.

  FIG. 3 is a longitudinal sectional view showing a structure of a cleaning unit constituting the wire cleaning device. As shown in the figure, the cleaning unit 22 includes a cylindrical cleaning box 31 that substantially cleans the wire 8. The cleaning box 31 is set to have an outer diameter smaller than the inner diameter of the pull chamber 2 so that it does not come into contact with the inner surface of the pull chamber 2 even if it is inserted into the pull chamber 2.

  Insertion holes 32 and 33 are formed on the central axis of the upper wall 31a and the bottom wall 31b of the cleaning box 31. The cleaning box 31 can penetrate the wire 8 suspended in the pull chamber 2 through the insertion hole 32 of the upper wall 31a and the insertion hole 33 of the bottom wall 31b. Each of the insertion holes 32 and 33 needs to be large enough to pass a seed crystal holder (not shown) attached to the tip of the wire 8.

  A nozzle 41 is provided on the side wall 31c of the cleaning box 31 to spray the cleaning liquid in the form of a mist toward the central axis of the cleaning box 31. The nozzle 41 includes an air nozzle 42 that blows out air, a diffuser nozzle 43 disposed in front of the air nozzle 42, and a cleaning liquid supply port 44 that opens between them. The air nozzle 42 has a narrowed tip, and air is supplied from a body unit (not shown) through an air supply pipe 45. Similarly, the cleaning liquid supply port 44 is supplied with the cleaning liquid from the main unit through the cleaning liquid supply pipe 46. As the cleaning liquid, alcohol or acetone can be applied.

  In the nozzle 41 having such a configuration, air is ejected from the air nozzle 42 toward the diffuser nozzle 43 at a high speed, and the cleaning liquid is sucked from the cleaning liquid supply port 44 by the action of the negative pressure generated by the flow of the air. The mixture is mixed with air, and the mist-like cleaning liquid is jetted together with the air through the diffuser nozzle 43. The nozzle 41 can easily adjust the amount of mist-like cleaning liquid to be ejected and the ejection pressure thereof by appropriately adjusting the flow rate of air supplied to the air nozzle 42.

  At this time, since the air used usually contains a small amount of oil, for example, when mixed with the cleaning liquid and then through a long pipe, the oil dissolves in the cleaning liquid and accumulates in the pipe. There is a risk of clogging. Since the nozzle 41 mixes the cleaning liquid and air immediately before jetting, there is no concern about such clogging.

  Here, an annular portion 34 protrudes upward from the peripheral edge of the insertion hole 33 from the bottom wall 31 b of the cleaning box 31, and the mist-like cleaning liquid sprayed from the nozzle 41 aggregates in the cleaning box 31. , And is accumulated on the bottom wall 31 b of the cleaning box 31 by being blocked by the annular portion 34. A plurality of waste liquid discharge ports 61 are formed on the bottom wall 31 b of the cleaning box 31 in order to discharge the aggregated cleaning liquid as waste liquid to the outside of the cleaning box 31. A waste liquid discharge pipe 62 is connected to each waste liquid discharge port 61, and this waste liquid discharge pipe 62 is connected to a waste liquid recovery tank provided in a main unit (not shown).

  A cylindrical portion 35 protrudes upward from the peripheral edge of the insertion hole 32 from the upper wall 31a of the cleaning box 31, and a donut-shaped disk member 36 is connected to the upper end of the cylindrical portion 35. Has been. The outer diameter of the disk member 36 is set slightly smaller than the inner diameter of the pull chamber 2. Thus, when the wire 8 is cleaned, when the cleaning unit 22 is disposed at the lower end of the pull chamber 2 or inserted into the pull chamber 2, the disk member 36 is regulated in the horizontal direction in the pull chamber 2, As a result, the cleaning box 31 can be positioned in the horizontal direction with respect to the pull chamber 2.

  The cleaning box 31, the nozzle 41, the air supply pipe 45, the cleaning liquid supply pipe 46, the waste liquid discharge pipe 62, the disk member 36, and the like constituting the cleaning unit 22 are made of resin. For example, flexible PU (polyurethane) or the like can be applied to piping such as the air supply pipe 45. As the cleaning box 31, the nozzle 41, and the disk member 36, FEP (fluororesin), PTFE (tetrafluoroethylene resin), PVC (polyvinyl chloride), or the like may be used. As a result, when the wire 8 is cleaned, even if the wire 8 contacts the cleaning unit 22 or the cleaning unit 22 contacts the inner surface of the pull chamber 2, the surface of the wire 8 and the inner surface of the pull chamber 2 are contaminated with metal impurities. Don't worry.

  The cleaning method of the present invention using the wire cleaning apparatus having such a configuration will be described below with reference to FIGS. First, as shown in FIG. 2, the pull chamber 2 is retracted from the main chamber 1, and the wire 8 is suspended in the pull chamber 2 by driving the wire lifting mechanism 11. A wire cleaning device 20 is disposed below the pull chamber 2, the cleaning unit 22 is raised by driving the elevator 23, inserted into the pull chamber 2, and disposed in the upper portion of the pull chamber 2.

  As a result, as shown in FIG. 3, the cleaning box 31 is horizontally disposed in the pull chamber 2 by the disk member 36 while passing the wire 8 through the insertion hole 32 of the upper wall 31a and the insertion hole 33 of the bottom wall 31b. It will be in the state where it was positioned.

  From this state, air is supplied to the air supply pipe 45 and cleaning liquid is supplied to the cleaning liquid supply pipe 46. Thereby, the mist-like washing | cleaning liquid is injected with air toward the wire 8 from the nozzle 41. FIG. The mist-like cleaning liquid ejected from the nozzle 41 penetrates between the wires constituting the wire 8, and deposits such as dust and SiO coagulated material can be lifted from the surface of the wire 8. Furthermore, the floated deposits can be blown off by the air sprayed from the nozzle 41 together with the mist-like cleaning liquid. In this way, it becomes possible to clean the wire 8 and reliably remove deposits from the wire 8.

  In addition to this, the wire 8 can be cleaned over the entire region in the axial direction by gradually raising the wire 8 as the wire lifting mechanism 11 shown in FIG. 2 is driven. At this time, if the wire rotating mechanism is also driven to rotate the wire 8, the mist-like cleaning liquid is sprayed over the entire circumferential direction of the wire 8, so that the deposit removal effect can be enhanced. Further, the wire 8 can be repeatedly raised and lowered in order to further enhance the effect of removing the deposits.

  At that time, since the spray of the mist-like cleaning liquid performed on the wire 8 is performed inside the cleaning box 31, the cleaning box 31 suppresses the scattering of the cleaning liquid and the deposits. Thereby, it is possible to suppress the deposits blown off from the wire 8 from scattering and adhere to the inner surface of the pull chamber 2, and to prevent the occurrence of dislocation caused by the deposits.

  Moreover, since the removal of the deposits from the wire 8 can be performed without removing the wire 8 from the wire pulling mechanism 11 of the single crystal pulling apparatus, the required time is shortened without a dangerous work at a high place. Can be performed efficiently.

  The aggregated cleaning liquid sprayed from the nozzle 41 is accumulated on the bottom wall 31 b of the cleaning box 31. The aggregated cleaning liquid is discharged as waste liquid from the waste liquid discharge port 61 and collected through the waste liquid discharge pipe 62. can do.

  In such a wire cleaning device 20, since the caster 24 is provided in the main body unit 21, when there are a plurality of single crystal pulling devices, the single crystal pulling devices can be handled flexibly. On the other hand, in the single crystal pulling apparatus proposed in Patent Document 1, it is necessary to provide an air nozzle for removing deposits from the wire in the pull chamber. For this reason, the wire cleaning device 20 of the present embodiment does not require a special cleaning mechanism in the single crystal pulling device, so that the cost is reduced compared to the single crystal pulling device proposed in Patent Document 1. This is also advantageous.

  In the embodiment described above, the wire 8 is cleaned in a state where the cleaning unit 22 is disposed inside the pull chamber 2 as shown in FIG. 3, but the cleaning unit 22 is connected to the pull chamber as shown in FIG. The wire 8 can also be washed in a state where it is arranged at the lower end of the wire 2. In this case, what is necessary is just to adjust the raise amount of the washing | cleaning unit 22 with the elevator 23 shown in the said FIG.

  In order to confirm the effects of the single crystal pulling wire cleaning apparatus and the cleaning method of the present invention, the following tests were conducted. As an example of the present invention, wire cleaning by spraying a mist-like cleaning liquid was performed by the method described above using the wire cleaning apparatus shown in FIGS. Cleansolve (R) was used as the cleaning liquid. In addition, as a comparative example, wire cleaning was performed by dipping in a cleaning liquid accompanied by wire removal and attachment to the wire pulling mechanism of the single crystal pulling apparatus.

  As a result, in the case of cleaning the wire of the comparative example, one hour was required for a series of operations ranging from wire removal, cleaning, and wire attachment. In the case of the wire cleaning of the present invention, the time required was about 20 minutes. Met. That is, in the wire cleaning of the example of the present invention, the time required for the cleaning can be remarkably shortened.

  Further, in the wire cleaning of the example of the present invention, the number of particles contained in the cleaning liquid before and after being used for cleaning was measured, and the degree to which deposits were removed from the wire was investigated. At this time, the sample solution was collected three times from the cleaning solution before and after use, the number of particles was measured for each sample solution with a particle counter in the solution, and the average value of the three measurement results was evaluated.

  FIG. 5 is a diagram showing the number of particles contained in the cleaning liquid before and after use, with the number of particles contained in the cleaning liquid before use as a reference (1). As shown in the figure, it can be seen that the cleaning liquid after use increased in the number of particles corresponding to the removed deposits at any particle size. For example, the number of particles having a size of 2 μm increased more than 50 times, and the number of particles having a size of 0.2 μm increased more than 3 times. That is, in the wire cleaning of the example of the present invention, deposits could be sufficiently removed from the wire.

  Further, after the wire cleaning of this example was performed, the single crystal was pulled and grown, and as a result, dislocation was not generated and a silicon single crystal having no problem in quality could be produced.

  According to the single crystal pulling wire cleaning apparatus and cleaning method of the present invention, the cleaning liquid can be sprayed onto the wire in the form of a mist so that the deposits can be lifted and blown off from the wire surface. The kimono can be reliably removed. Also, since the cleaning box suppresses the scattering of cleaning liquid and deposits, the deposits blown off from the wire can be prevented from scattering and adhering to the inner surface of the pull chamber. Can be prevented. Furthermore, the removal of the deposits from the wire can be efficiently performed without removing the wire from the single crystal pulling apparatus.

It is a longitudinal cross-sectional view which shows the structure of the single crystal pulling apparatus suitable for the growth of the silicon single crystal by CZ method. It is a figure which shows typically the whole structure of the single crystal pulling apparatus which provided the wire washing | cleaning apparatus which is one Embodiment of this invention. It is a longitudinal cross-sectional view which shows the structure of the washing | cleaning unit which comprises a wire washing | cleaning apparatus. It is a longitudinal cross-sectional view which shows the state which has arrange | positioned the washing | cleaning unit in the lower end of the pull chamber at the time of wire washing | cleaning. It is the figure which represented the number of particles contained in the cleaning liquid before and after use on the basis of the number of particles contained in the cleaning liquid before use as a standard (1).

Explanation of symbols

1: main chamber, 2: pull chamber,
3: crucible, 3a: quartz crucible, 3b: graphite crucible 4: support shaft, 5: heater, 6: heat insulating material, 7: heat shield,
8: Wire, 9: Seed crystal holder, 10: Seed crystal,
11: Wire lifting mechanism, 12: Reel, 13: Drive motor,
14: purge gas introduction port, 15: exhaust port,
16: Raw material melt, 17: Silicon single crystal,
18: support, 19: arm member,
20: Wire cleaning device, 21: Main unit, 22: Cleaning unit,
23: Elevator, 24: Caster,
31: Washing box, 31a: Upper wall, 31b: Bottom wall, 31c: Side wall,
32: Top wall insertion hole, 33: Bottom wall insertion hole,
34: annular portion, 35: cylindrical portion, 36: disc member,
41: nozzle, 42: air nozzle, 43: diffuser nozzle,
44: Cleaning liquid supply port, 45: Air supply pipe, 46: Cleaning liquid supply pipe,
61: Waste liquid discharge port, 62: Waste liquid discharge pipe

Claims (9)

A main chamber in which a crucible is disposed; a pull chamber that can be separated from the upper end of the main chamber and retractable; a wire lifting mechanism that lifts and lowers a single crystal pulling wire from the upper end of the pull chamber into the pull chamber; A single crystal pulling wire cleaning device used for a single crystal pulling device comprising:
With the pull chamber retracted from the main chamber, a cleaning box that allows the wire suspended in the pull chamber to pass through insertion holes formed in the upper wall and the bottom wall;
A cleaning apparatus for a single crystal pulling wire, comprising: a nozzle for spraying a cleaning liquid in a mist form toward the wire in the cleaning box.   The single crystal pulling wire cleaning apparatus according to claim 1, further comprising a waste liquid recovery mechanism that recovers the cleaning liquid sprayed and aggregated in the cleaning box.   The single crystal pulling wire cleaning device according to claim 1, further comprising a cleaning box lifting mechanism for lifting and lowering the cleaning box.   The single crystal pulling wire cleaning apparatus according to claim 1, further comprising a positioning member that positions the cleaning box in a horizontal direction with respect to the pull chamber.   The nozzle includes an air nozzle that blows out air, a diffuser nozzle disposed in front of the air nozzle, and a cleaning liquid supply port that opens between the air nozzle and the diffuser nozzle and supplies the cleaning liquid. The single crystal pulling wire cleaning apparatus according to claim 1.   The single crystal pulling wire cleaning apparatus according to claim 1, wherein the cleaning liquid is alcohol or acetone.   The said washing | cleaning box is comprised with resin, The washing | cleaning apparatus of the wire for single crystal pulling in any one of Claims 1-6 characterized by the above-mentioned.   The single crystal pulling wire cleaning apparatus according to claim 1, further comprising a traveling mechanism. A main chamber in which a crucible is disposed; a pull chamber that can be separated from the upper end of the main chamber and retractable; a wire lifting mechanism that lifts and lowers a single crystal pulling wire from the upper end of the pull chamber into the pull chamber; A method for cleaning a single crystal pulling wire used in a single crystal pulling apparatus comprising:
After retracting the pull chamber from the main chamber,
The wire suspended in the pull chamber is passed through the cleaning box through insertion holes formed in the upper wall and the bottom wall of the cleaning box,
A method for cleaning a single crystal pulling wire, characterized in that a cleaning liquid is sprayed in a mist form from a nozzle disposed in the cleaning box while the wire is raised by the wire lifting mechanism.

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