JP5111206B2 - Pattern correction method and pattern parts - Google Patents

Description

  The present invention relates to a pattern correction method capable of correcting a defective portion of a pattern (wiring) generated in a pattern component, and a pattern component corrected using the pattern correction method described above, and more specifically. The present invention relates to a pattern correction method and a pattern component for correcting a defective portion of a pattern generated in a manufacturing process of a flat panel display, a printed circuit board, and an exposure mask.

  In recent years, with the increase in size and definition of flat panel displays such as plasma displays, liquid crystal displays, and EL displays, the probability that defects such as defects are formed in patterns formed on the surface of a glass substrate, for example, wiring. Is high. Therefore, a method for correcting a defective portion has been proposed in order to improve the yield.

  For example, a fine pattern such as a wiring is formed on the surface of a glass substrate of a liquid crystal display. When a part of the wiring is disconnected due to a defect, correction is performed by the following method. For example, there is a method in which a conductive correction paste (correction liquid) is applied to a defective portion that is disconnected due to a defect and then fired. Further, there is a method of correcting a defect portion by depositing a metal contained in a material gas at a position irradiated with laser light using a laser CVD apparatus. Alternatively, a part of the metal film is sublimated by irradiating the laser beam with a transfer member having a metal film formed on one main surface of a transparent base material capable of transmitting the laser beam facing a defective portion. There is a method for correcting the defect by sputter transfer.

  The above-described method of applying a conductive correction paste (correction liquid) to a defective portion that has been disconnected due to a defect and then firing it is disclosed, for example, in JP-A-8-203898 (Patent Document 1). As described above, after the organometallic solution is dropped onto the defective portion of the wiring with a dispenser, firing is performed by irradiating laser light. This decomposes the organometallic compound, deposits a metal film on the defective portion of the wiring, and corrects the defective portion.

  Further, in a defect correction method using a laser CVD apparatus (Chemical Vapor Deposition), as disclosed in, for example, Japanese Patent Laid-Open No. 2002-131888 (Patent Document 2), a laser is applied to a metal source gas. By irradiating light, the metal source gas is decomposed and the generated metal (tungsten) is deposited on the defective portion of the wiring.

  In correction by transfer, for example, as disclosed in JP 2000-31013 A (Patent Document 3), a transfer plate having a conductive metal film formed on one main surface is opposed to a defective portion. In this way, the defective portion is corrected by irradiating laser light from behind the transfer plate and sputter-transferring the conductive metal film to the defective portion.

Alternatively, as shown in Japanese Patent Application Laid-Open No. 2007-19105 (Patent Document 4), a paste containing nano-sized fine particles such as a base, a heat-melting layer, and a fine metal layer (for example, gold, silver, aluminum, palladium) is applied. Then, a laser beam is irradiated to a laminated material made of a metal layer in which the solvent component is volatilized, and the heat-melted layer and the fine metal layer are transferred to the broken portion. Then, the laser beam is irradiated again with the laser beam to thermally decompose and remove, and the fine metal layer is irradiated with the laser beam and melted and fired to ensure conduction of the defective portion.
JP-A-8-203898 JP 2002-131888 A JP 2000-31013 A JP 2007-19105 A

  In the correction method disclosed in Patent Document 1 in which an organometallic solution is dropped onto a defective portion of a wiring with a dispenser and then fired by irradiating a laser beam, when the wiring becomes fine, the inner diameter is several μm at the tip. It is necessary to use a dispenser. In this case, the tip of the dispenser tends to be clogged, and control for drawing fine wiring becomes difficult. In addition, when the organic metal solution is applied and then baked, the thickness of the repaired portion shrinks to about 1/10 and becomes very thin, so that the stepped portion of the defective portion is likely to crack and low resistance is obtained. difficult.

  In the correction method using the laser CVD apparatus disclosed in Patent Document 2, a means for supplying and discharging a plurality of source gases to a local space including a defective portion of the wiring is required. Complex and expensive equipment. Further, since tungsten used as a correction material has a high melting point of 3422 ° C., it is difficult to make an alloy with the wiring material, and the contact resistance with the wiring material tends to increase, and the electric resistance of the corrected portion tends to increase. For this reason, in order to reduce the electrical resistance, it is necessary to increase the concentration of the gas used, reduce the speed of laser scanning, or increase the film thickness by laminating a plurality of times.

  In the correction method disclosed in Patent Document 3, the metal film of the transfer member is irradiated with laser light, and the metal film is melted and scattered (laser sputtering) and transferred to the broken defect portion. In order to reduce the correction resistance, the thickness of the film is increased by repeatedly transferring the same defective portion several times while changing the position of the transfer member, and laminating the metal film. Need to increase.

  In addition, after the laser beam is irradiated to the laminated material composed of the base material, the heat-melting layer, and the fine metal layer, disclosed in Patent Document 4, the heat-melting layer and the fine metal layer are transferred to the defective portion. In the correction method in which the heat melting layer is irradiated with laser light for thermal decomposition and removed, and the fine metal layer is irradiated with laser light for melting and firing, there are the following problems. That is, not only the process of transferring to the defective part, but also the process of removing the heat-melted layer transferred together with the defective part and the process of melting and firing the fine metal layer are necessary, so the correction process is complicated and the correction time Is expected to be long.

  The present invention has been made in view of the above problems. Its purpose is low repetitive operation and low electrical resistance by forming a metal thin film repair layer with a uniform film thickness on the defective part of the pattern (wiring) that is disconnected in a simple process. The present invention provides a pattern correction method that can be corrected to be a pattern, and a pattern component that is corrected using the pattern correction method described above.

  The pattern correction method according to the present invention is a pattern correction method for correcting a defective portion of a pattern formed on the surface of a substrate. In the pattern correction method, on one main surface of a base material that can transmit laser light, an alloy layer is formed by being melted by heating at an adhesion boundary surface with the first metal film that forms the pattern, and is fixed. A transfer member on which at least one second metal film is formed is confronted with the defective portion. In addition, the second metal film formed on the transfer member is in close contact with the defective portion, and the second metal film is in close contact with the defective portion including the first metal film. Irradiating a laser beam to a range including a defective portion from above. Then, in the step of irradiating with the laser beam, the second metal film and the first metal film are melted at an adhesion boundary surface with the first metal film that forms a pattern that adheres to the second metal film by the laser beam. A pattern correction method in which an alloy layer is formed and fixed to a substrate.

  In the pattern correction method described above, the laser beam is irradiated in a state where the second metal film formed on the transfer member is in close contact with the defect portion that is disconnected due to the defect of the first metal film that forms the original pattern. Heat by irradiation. And the alloy layer which those metals fuse | melted is formed in the contact | adherence boundary surface of a 1st metal film and a 2nd metal film. As described above, the defective portion can be corrected by performing the above-described steps once. In the corrected defect portion, the adhesion boundary surface between the first metal film that forms the original pattern before correction and the second metal film formed on one main surface of the base material of the transfer member is melted. Thus, an alloy layer of the first metal film and the second metal film is formed and firmly fixed. For this reason, electrical resistance can be made low.

  In the pattern correction method according to the present invention, in the step of bringing the second metal film into close contact with the defect portion, the direction of the other main surface of the transfer member facing the one main surface on which the second metal film is formed Then, the transfer member is pressed toward the substrate using a pressing member that can transmit laser light.

  Using the pressing member, the second metal film serving as a transfer correction material is brought into close contact with the defective portion. Then, the laser beam is transmitted through the pressing member to irradiate the correction range (transfer range) including the defective portion. As a result, an alloy layer can be easily formed and adhered to the adhesion boundary surface between the first metal film and the second metal film forming the original pattern at the defect portion where the second metal film is adhered. To do. Further, it is more preferable that the pressing member has a spherical shape in contact with the transfer member. By arranging the spherical convex surface forming the pressing member to be a surface in contact with the transfer member, the second metal film formed on the transfer member is more closely adhered to the pattern (wiring) including the defective portion. be able to.

  In the pattern correction method according to the present invention, the second metal film is firmly fixed to an area located below the pattern on the substrate on which the pattern is formed, for example, a surface formed of glass or silicon oxide. In the step of irradiating the laser beam, the second metal film is formed by causing an interface reaction, for example, a silanol bond, at an adhesion boundary surface between the Si—OH existing in the region located below the pattern and the second metal film. The defective first metal film is lost, and the surface formed of glass or silicon oxide is firmly fixed to the exposed region. Therefore, even if the material constituting the pattern of the pattern component is not a metal, the second portion is formed if the surface of the defective portion of the pattern, that is, the layer (substrate) located under the pattern is glass or silicon oxide. It is possible to firmly fix the Si-OH and the silanol bond at the contact boundary surface with the metal film. The material of the second metal film constituting the transfer member is selected so that the melting point thereof is lower than the heat resistant temperature of the substrate. In addition to the silanol bond, the interface reaction includes, for example, an anchor effect in which each material enters and adheres to the concavo-convex portion of the adhesion boundary surface.

  In the step of facing the transfer member to the defective portion, the second metal film formed on the transfer member may be formed in a plurality of layers such that metal layers made of different metal materials are in contact with each other. The outermost metal layer of the second metal film can function as an anti-oxidation metal film that prevents other metal layers, which are layers located below the outermost metal layer, from being oxidized. Materials may be selected. In this case, the second metal film is formed into a plurality of layers by vapor deposition or the like. As a material for forming the antioxidant metal film, it is preferable to use a material whose melting point is lower than the melting point of a material for forming another metal layer, which is a layer located below the antioxidant metal film. Further, the alloy layer formed by melting the second metal film and the first metal film formed of a plurality of layers at the adhesion boundary surface includes material components constituting the plurality of layers.

  Further, the laser beam to be irradiated is continuously oscillated, and the shape of the laser beam irradiation region is determined by adjusting using a slit provided in the optical path of the laser beam. As a result, the second metal film is collectively heated in a shape for correcting the defect. Alternatively, the second metal film is transferred onto the pattern including the defect portion by scanning the laser beam focused (squeezed) in a spot shape by the correction range (necessary length) of the defect portion. be able to. That is, a correction layer having a required length can be obtained.

  In the pattern correction method according to the present invention, the second metal film formed on one main surface of the substrate is partially removed in the step of facing the transfer member to the defective portion, thereby Alternatively, a transfer member in which an independent metal film region is formed through a gap may be used. Alternatively, the second metal film may be partially not formed. For example, the second metal film is patterned in advance, leaving the second metal film having a width necessary for correcting the defect. The pattern length may be formed to a length that requires defect correction, or may be a continuous pattern. When correcting, the correction transfer region (the pattern of the second metal film) is pressed and adhered in a state of being superimposed so as to face the upper part of the defect portion, and the transfer area is irradiated with laser light and heated. . In this case, since the thin film made of the second metal film is insulated from the surrounding area, heat dissipation to the surrounding area is suppressed during heating. As a result, the intensity of laser light irradiation can be set low, and damage to the substrate can be prevented.

  The pattern correction method according to the present invention is applied to, for example, correction of a defect portion generated on a wiring of a TFT (thin film transistor) substrate. Moreover, if the pattern correction method according to the present invention is applied to a pattern component that requires correction, a correction layer of a metal thin film having a uniform film thickness can be transferred to the defect portion. The defect portion and the second metal film are firmly fixed by forming an alloy layer at the adhesion boundary surface or by interfacial reaction such as silanol bonding. As described above, the pattern component whose defect portion has been corrected using the pattern method according to the present invention has the same function as the pattern component that originally does not have the defect portion, and the reliability of the pattern component is improved.

  If a defective portion of a pattern (wiring) is corrected using the pattern correcting method according to the present invention, a corrected layer of a metal thin film having a uniform film thickness can be transferred to the defective portion even with a single correction. In addition, since the pattern made of the first metal film on the surface of the substrate and the surface of the substrate located below the pattern are firmly fixed to the second metal film of the transfer member, Electric resistance can be lowered. For this reason, the reliability of the pattern component corrected by the above pattern correction method is improved.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each embodiment, portions having the same function are denoted by the same reference numerals, and the description thereof will not be repeated unless particularly necessary.

(Embodiment 1)
FIG. 1 is a flowchart showing the procedure of each step of the pattern correction method. This is a correction method for correcting a defective portion of a pattern such as a wiring formed on the surface of a substrate. As shown in FIG. 1, first, a correction range (transfer range) is determined in a step (S10) of observing a defective portion of a substrate that needs to be corrected. Thereafter, in the step (S20) of disposing the transfer member on the defective portion, the first metal film forming the pattern is melted by heating and the alloy layer on one main surface of the substrate capable of transmitting the laser beam. And a step of confronting the defective portion with the transfer member on which at least one second metal film that can be fixed is formed. Note that the main surface refers to a surface having a larger area, and here, the surface that forms the second metal film and the surface that faces the surface that forms the second metal film are the main surface. Subsequently, as a step (S30) of bringing the second metal film into close contact with the defective portion, a step of bringing the second metal film into close contact with the defective portion is performed. Then, in the step of irradiating the laser beam (S40), the laser is applied to the range including the defective portion from above the substrate of the transfer member in a state where the second metal film is brought into close contact with the defective portion including the first metal film. A step of irradiating light is performed. If the step (S50) for removing the transfer member is performed at the end through these steps, the correction of the defective portion is completed. Hereinafter, each process mentioned above is demonstrated in detail.

  First, the process (S10) of observing a defective part is implemented. Specifically, it is a step of observing and confirming the defect using the observation optical system moved to the position of the defect portion based on the position information of the defect portion of the pattern. In this step, a transfer range necessary for correction is determined. Further, if necessary, the defect portion may be shaped by laser ablation or cutting using a processing laser light source or the like so as to facilitate correction.

  FIG. 2 is a schematic view showing a pattern component having a defective portion in which a part of the pattern is disconnected due to a defect. The pattern component 2 includes a substrate 23 and wiring 24 that is a pattern formed on the surface thereof. As shown in FIG. 2, the wiring 24 has a defective portion 24 a which is a region where a part of the wiring 24 is disconnected due to a defect. The pattern component 2 is, for example, a TFT substrate of a liquid crystal panel. In this case, the substrate 23 is made of glass, and the wiring 24 is formed by forming a first metal film, for example, a metal thin film made of an aluminum alloy such as Al—Nd or Al—Cu in a fine line shape. When the pattern component 2 is a TFT substrate, since an insulating film is formed on the wiring 24, the defect 24a is corrected before the insulating film is attached. It is assumed that the surface of the wiring 24 is oxidized with time after the formation of the wiring 24. In this case, the oxidized layer is formed by laser ablating the surface of the wiring 24 including the defect 24a. It may be removed.

  In order to ensure the conduction of the defective portion 24a, it is necessary to make a correction to fix the conductive correcting member so as to overlap the normal wiring 24 at both ends including the defective portion 24a. Therefore, hereinafter, a transfer correction method using the transfer member 15 in which the second metal film 27 is formed on one main surface of the base material 26 by vapor deposition or the like will be described.

  Next, a step (S20) of arranging a transfer member is performed. Specifically, it is a step of superimposing the transfer member 15 so as to face the defective portion 24a. FIG. 3 is a schematic diagram showing the structure of a transfer member that corrects a pattern, for example, a defective portion of a wiring. As shown in FIG. 3, the transfer member 15 includes a base material 26 and a second metal film 27 formed on one main surface thereof. The base material 26 has a heat resistance of about 450 ° C. and is made of a material that can transmit a laser beam for heating. For example, a film made of a silicone sheet made of polyimide, fluorine resin, or silicone resin, or a glass plate, etc. Is used. As the heating laser beam, for example, YAG second harmonic continuous wave laser beam (wavelength 532 nm) is used. When a colored polyimide film is used as the base material 26, the light transmittance at a wavelength of 532 nm deteriorates as the thickness of the base material 26 increases. Therefore, the film thickness is selected as needed, but is thinner. Is preferred. For example, in the case of a colored polyimide film having a thickness of 12.5 μm, the transmittance of the YAG second harmonic laser (wavelength 532 nm) is about 65%, but if the thickness is 25 μm, the transmittance is about 40% and the thickness Is 50 μm, the transmittance decreases to about 20%. Therefore, when a polyimide film is used as the substrate 26, it is preferable to use a film having a thickness of 25 μm or less. In particular, the thickness is more preferably around 12.5 μm (7 μm or more and 15 μm or less). Recently, a transparent polyimide film is also available, and may be used as the base material 26 as long as the heat resistance is sufficiently satisfied.

  On one main surface of the base material 26, a first metal film (for example, an aluminum alloy) for forming the wiring 24 of the pattern component 2 (substrate 23) and an alloy can be easily melted by heating to form an alloy. A possible second metal film 27 is formed, but the melting point of the second metal film 27 is preferably equal to or lower than the heat resistant temperature of the base material 26. For example, as the material of the second metal film 27, zinc (melting point 420 ° C.), zinc alloy (eg, zinc aluminum alloy, melting point 350 ° C. to 400 ° C.), gold alloy (eg, gold-tin alloy) having a relatively low melting point. , A melting point of about 280 ° C.) and a metal material such as tin (melting point: 450 ° C.). The second metal film 27 may be a single layer having only one metal thin film, or may be formed in a plurality of layers so that metal layers made of different metal materials are in contact with each other.

  When a zinc aluminum alloy, which is one of the zinc alloys, is used as the second metal film 27, one having a melting temperature of about 350 ° C. to 400 ° C. is used, although the melting temperature varies depending on the aluminum content. In particular, when the defect 24a of the wiring 24 is corrected using the transfer member 15 and then the temperature of the substrate 23 is raised in a subsequent process, the transfer member 15 is made of a metal material having a melting point that does not melt the corrected part in the subsequent process. It is preferable to form the second metal film 27 having one or more thin films. If the temperature for heating the substrate 23 or the environmental temperature for using the pattern component 2 is sufficiently low in the subsequent process after the defect 24a is corrected, the second metal film 27 is made of a gold-tin alloy. Thus, a transfer member 15 in which only one layer of a low melting point metal having a melting point of about 280 ° C. may be used.

  Since the second metal film 27 is formed as a thin film on one main surface of the base material 26 by using a vacuum deposition method or a sputtering method that is generally widely used, the second metal film 27 has conductivity in a thin film state. Exhibit low electrical resistance. The second metal film 27 can correct the defective portion 24a of the wiring 24 so as to become a correction layer having a uniform thickness. In order to reduce the electric resistance of the correction layer, it is preferable to increase the thickness of the second metal film 27. For example, in the case where the pattern component 2 that is a target for correcting the defective portion 24a is a TFT substrate used for a liquid crystal panel, the thickness of the wiring 24 is, for example, 0.4 μm. In this case, the thickness of the second metal film 27 is preferably set to 0.1 μm or more and 0.5 μm or less. In addition, when the defect part 24a includes an uneven surface, the second metal film 27 is thinner in order to transfer the second metal film 27 without a gap according to the shape of the uneven surface, and is 0.1 μm or more and 0 It is preferable to set it to 3 μm or less. Further, as the thickness of the second metal film 27 is increased, more laser power is required due to the irradiation of the laser beam during heating. For this reason, what is necessary is just to set the thickness of the 2nd metal film 27 according to a use environment.

  FIG. 4 is a schematic view showing the structure of a transfer member in which an antioxidant metal film is formed as the outermost metal layer of the second metal film. The transfer member 15 in FIG. 3 has a structure in which one layer of the second metal film 27 exists on the base material 26. However, like the transfer member 15a shown in FIG. 4, the second metal film 27 may have a two-layer structure. The second metal film 27 includes, for example, a zinc-aluminum alloy layer (thin film) serving as a base material film 27a of a metal material to be transferred from one main surface of the base material 26, and an antioxidant metal film 27b. The gold-tin alloy layer (thin film) is formed by vacuum deposition, sputtering, or the like.

  In the gold-tin alloy layer as the anti-oxidation metal film 27b on the outermost surface of the two-layer structure of the second metal film 27 in FIG. 4, the zinc-aluminum alloy layer, which is the lower layer, is oxidized. It has the function to prevent. In particular, zinc aluminum alloy is a metal that is easily oxidized, and when oxidized, silanol bonding becomes difficult and transferability is lowered. For this reason, the metal film 27b for antioxidant is required. As the antioxidant metal film 27b, for example, gold, platinum, iridium, gold alloy, platinum alloy, iridium alloy or the like can be used. Therefore, for example, the above-described gold-tin alloy is used as the oxidation-preventing metal film 27b.

  Here, the main purpose of the oxidation-preventing metal film 27b is to suppress oxidation of the base material film 27a. For this reason, the thickness should just have the thickness which can suppress the oxidation of the base material film | membrane 27a (zinc aluminum alloy), and it is preferable that it is thinner than the thickness of the base material film | membrane 27a. Specifically, for example, the film thickness is set to 0.01 μm or more and 0.03 μm or less.

  The melting point of the gold-tin alloy, which is the thinnest outermost film as the anti-oxidation metal film 27b, is lower than the melting point of the zinc-aluminum alloy as the base material film 27a. For this reason, the gold-tin alloy is first melted at the time of transfer, and is easily melted and fixed at the contact boundary surface with the defective portion 24a of the wiring 24.

  FIG. 5 shows the structure of a transfer member having a three-layer structure in which a light-absorbing layer made of a metal layer having a good light-absorbing property is added between the base material film and the base material film in the two-layer structure shown in FIG. FIG. Like the transfer member 15a shown in FIG. 4 described above, the second metal film 27 may be formed in a plurality of layers such that metal layers made of different metal materials are in contact with each other. Therefore, it may have a three-layer structure as shown in FIG. In the transfer member 15b having the second metal film 27 having the three-layer structure shown in FIG. 5, the light absorption layer 27c is a low melting point metal and is a base material film 27a ( It is preferable to use a metal material having better light absorption characteristics than zinc-aluminum alloy. For example, when the oxidation-preventing metal film 27b is a gold-tin alloy layer, using the same gold-tin alloy as the metal material of the light absorption layer 27c is advantageous in that the types of metals used can be reduced. Therefore, the second metal film 27 in the transfer member 15b is further provided with a light absorption layer 27c made of a gold-tin alloy on one main surface of the substrate 26, that is, a gold-tin alloy layer and a zinc-aluminum alloy. And a three-layer structure of a gold-tin alloy layer. Note that when the second metal film 27 is formed of a plurality of layers, the outermost layer and the first metal film are in close contact with each other, so that these alloy layers are formed at the time of melting. . Since each layer of the second gold layer film 27 that is a plurality of layers is very thin, even a layer that is not in contact with the first metal film is melted into the alloy layer by diffusion or the like.

  When the metal thin film is made of zinc-aluminum alloy, the reflectance of the laser beam with a wavelength of 532 nm as the heating source is almost the same as that of aluminum (92%), and the reflectance of the laser beam with respect to the wavelength of 532 nm of the gold-tin alloy is gold ( 80%), and assuming that all the remainder is absorbed, the laser beam irradiated by the gold-tin alloy can be absorbed at a higher rate. The light absorption layer 27c only needs to be able to efficiently absorb the irradiated laser light and does not need to be too thick. For example, the thickness of the light absorption layer 27c is preferably 0.1 μm or less, and more preferably 0.01 μm or more and 0.03 μm or less. If the light absorption layer 27c is formed, the second metal film 27 having the three-layer structure including the light absorption layer 27c, the base material film 27a, and the antioxidant metal film 27b is heated to a transferable temperature with less laser power. can do. Therefore, in particular, when the base material 26 of the transfer member 15b is a polyimide film, the possibility of damage such as carbonization due to the high temperature of the base material 26 can be reduced.

  Further, if a metal having a melting point characteristic lower than that of the base material film 27a is selected as the material of the light absorption layer 27c in contact with the base material 26, the peelability between the base material 26 and the light absorption layer 27c during transfer is improved. Convenient.

  In the structure of the transfer member 15 shown in FIG. 3, the second metal film 27 formed on one main surface of the substrate 26 is one layer (for example, zinc aluminum alloy). In this case, one layer of thin film Is transferred to the defective portion 24a. Further, in the case where the second metal film 27 has a plurality of layers as in the transfer member 15a and the transfer member 15b shown in FIGS. 4 and 5, the second metal in the plurality of layers is used. The entire film 27 is transferred to the defect portion 24a to ensure conduction. Note that the second metal film 27 may have four or more layers.

  The defect portion 24a is corrected through the above-described step (S20) in which the transfer member 15 is superimposed on the defect portion 24a so as to confront the defect portion 24a. Here, a pattern in which the defect correction using the transfer member 15 is possible. The correction device 1 will be described.

  FIG. 6 is a schematic diagram of a pattern correction apparatus for realizing the pattern correction method of the present invention. The pattern correction apparatus 1 shown in FIG. 6 includes an XY stage 3 on which a pattern component 2 that requires correction of a defective portion 24a (see FIG. 2), a Z stage 4, and an observation optical system for observing the surface of the pattern component 2. 5 and a monitor 6 for displaying the observed image. Further, the laser light source includes a first laser light source 7 that irradiates a laser beam through the observation optical system 5 to cut or laser ablate unnecessary portions, and a second laser light source 8 for heating. Furthermore, the transfer member 15 used for correcting the defective portion 24a of the pattern component 2 is moved relative to the pattern component 2 in the XY direction or moved in the Z-axis direction, and the transfer member 15 is used as the pattern component 2. And pressing means 10 for pressing the defective portion 24a. The image processing unit 11 for recognizing the defective portion 24a, a host computer 12 for controlling the entire apparatus, and a control computer 13 for controlling the operation of the apparatus mechanism unit are provided.

  FIG. 7 is a schematic diagram showing the internal configuration of the main part of the pattern correction apparatus shown in FIG. A pattern part 2 having a pattern, for example, a defective part 24a that is disconnected due to a defect in a part of the wiring 24 is fixed to the chuck 14, and the chuck 14 can be moved in the direction along the XY direction by the XY stage 3. Is done. When the pattern component 2 is large, instead of the XY stage 3 in which the X axis and the Y axis are overlapped, a gantry type stage that can independently drive the X axis and the Y axis is adopted. Space can be reduced. Here, the direction of the X axis refers to the direction extending left and right of the pattern correction apparatus 1 shown in FIG. 6, and the direction of the Y axis refers to the depth direction extending from the front to the back of the pattern correction apparatus 1 shown in FIG. Point to. Therefore, the XY direction refers to a direction along the horizontal plane direction of the pattern correction device 1 shown in FIG.

  As the first laser light source 7, a light source capable of irradiating a YAG pulse oscillation laser, for example, a laser beam capable of switching between the first, second and third harmonics, as shown in FIG. Mounted on top of the. Further, a second laser light source 8 capable of irradiating a second laser beam for heating the transfer member 15 aligned by the transfer member supply means 9, for example, a YAG second continuous wave laser is fixed to the observation optical system 5. . Switching between the first laser light source 7 and the second laser light source 8 is performed by moving the mirror 5a. The mirror 5a may be replaced with a beam splitter.

  The laser light emitted from the first laser light source 7 or the second laser light source 8 is a beam splitter 5b, a slit mechanism 5c, a beam splitter 5d, an imaging lens 5e, a beam splitter 5f, and an objective lens 5g shown in FIG. , And is irradiated onto the pattern component 2 or the transfer member 15. A CCD camera 5h is provided in association with the beam splitter 5d, and reflected light from the pattern component 2 and the like is imaged. In addition, slit light illumination 5i and epi-illumination 5j are attached to the observation optical system 5.

  As a step of bringing the second metal film 27 of the transfer member 15 into close contact with the defective portion 24a of the pattern component 2, the other main surface of the transfer member 15 facing the one main surface on which the second metal film 27 is formed. From the direction, that is, from the upper side of the transfer member 15, the transfer member 15 is pressed toward the pattern component 2 via the pressing member 16. In FIG. 7, a pressing member 16 that can transmit laser light is included in the tip portion of the pressing means 10, which is shown schematically, that is, the lower end portion of the pressing means 10. The pressing member 16 is made of a material that can transmit laser light, such as glass, and is a flat glass plate or a plano-convex lens whose surface on the side in contact with the transfer member 15 is spherical in order to reliably press the transfer member 15. Is fixed. By arranging the spherical convex surface 16a forming the pressing member 16 to be a surface in contact with the transfer member 15, the second metal film 27 formed on the transfer member 15 is made stronger against the defective portion 24a. It can be adhered.

  The laser beam of the second laser light source 8 is provided in the middle of the optical path, and after passing through the slit mechanism 5c adjusted in advance according to the shape of the transfer range, the transfer member 15 is pressed by the pressing member 16. The region where the second metal film 27 is in close contact with the defect 24a is heated together. Instead of collective heating, the laser beam is condensed into a spot having a diameter of about 10 μm (after being squeezed), and then scanned for the correction range (necessary length) of the defective portion 24 a on the transfer member 15. In some cases, the laser beam is irradiated and heated. In this way, a correction layer having a required length can be obtained. In this case, the slit mechanism 5c is not used and may be fully opened.

  FIG. 8 is a schematic diagram showing a modification of the configuration of the main part of the pattern correction apparatus shown in FIG. In FIG. 8, only the second laser light source 8 for heating is mounted on the observation optical system 5. In this case, the first laser light source 7 for cutting or laser ablating an unnecessary portion of the wiring 24 formed on the surface of the pattern component 2 is mounted on another observation optical system 5 (not shown), and the respective observation optics. The system 5 may be fixed on the Z stage 4 for use. Here, the direction of the Z-axis refers to a direction extending up and down of the pattern correction apparatus 1 shown in FIG. Therefore, the Z stage 4 is a stage that can be moved in a direction along the vertical direction (vertical direction) of the pattern correction apparatus 1. When the laser beam of the second laser light source 8 is focused in a spot shape and scanned on the second metal film 27, it is not necessary to adjust the irradiation range of the laser beam with the slit mechanism 5c. The beam splitter 5b, the slit mechanism 5c, and the slit light illumination 5i are not necessary and may be removed from the observation optical system 5.

  FIG. 9 is a schematic view showing the configuration of the pressing means. The pressing means 10 is fixed to the observation optical system 5 via the base plate 17. Note that the base plate 17 may be directly fixed to the Z stage 4. Since the base plate 17 and the moving plate 18 are fixed via the linear slide 19, the moving plate 18 can be moved in the direction along the Y axis described above (the direction intersecting the paper surface in FIG. 9). It becomes. Further, the pressing plate 20 that fixes the pressing member 16 to the lower side thereof moves through the linear motion slide 21 so that the pressing plate 20 can be moved in the direction along the Z axis described above (the vertical direction of the paper surface in FIG. 9). It is fixed to the plate 18. The lower end of the output shaft 22a of the driving means 22 (for example, an air cylinder) fixed to the moving plate 18 is fixed to the pressing plate 20, and the pressing plate 20 can be moved in the direction along the Z axis. To do. The pressing plate 20 is formed with a through hole 20a that is present underneath, for example, for observing the state of the defect 24a or capable of irradiating laser light, and a pressing member made of glass, for example, at the lower end of the opening. 16 is fixed.

  If the moving plate 18 is moved in the direction along the Y axis on the linear slide 19 by a driving means that can move in the direction along the Y axis (not shown), the pressing plate including the pressing member 16 By moving 20 away from the lower side of the objective lens 5g, the substrate 23 can be directly observed or laser processed by the objective lens 5g. It is also possible to observe with the objective lens 5g through the pressing member 16 or to perform laser processing. In this case, it is possible to eliminate the need for driving means that can move in the direction along the Y axis.

  Here, returning to the correction process, the description will be continued. Through the step (S20) of arranging the transfer member, a step (S30) of closely attaching to the defective portion is performed. Specifically, for example, formed on one main surface of the substrate 26 of the transfer member 15 (see FIG. 3) using the pressing member 16 provided in the pattern correction device 1 and fixed to the pressing means 10. This is a step of pressing the second metal film 27 to the defective portion 24 a of the wiring 24 by pressing toward the pattern component 2 from the direction of the other main surface facing the second metal film 27.

  (A) to (D) of FIG. 10 illustrate states in each stage included in the step (S20) and the subsequent steps (S30), (S40), and (S50). FIG. 10A is a schematic view showing a state in which the pressing member and the transfer member are confronted with a range including a defective part of the pattern component. FIG. 10B is a schematic view showing a state in which the pressing member is lowered and the transfer member is pressed downward to bring the transfer member into close contact with a range including a defective portion of the pattern component. These FIG. 10A and FIG. 10B are the respective stages relating to the steps (S20) and (S30), respectively.

  As shown in FIG. 10 (A), the second metal film 27 formed on one main surface of the base material 26 of the transfer member 15 is connected to the wiring 24 formed on the surface of the substrate 23 of the pattern component 2. It is made to oppose the range which generate | occur | produced above and contains the defect part 24a. The second metal film 27 formed on one main surface of the substrate 26 of the transfer member 15 is a single metal film (see the transfer member 15 in FIG. 3) or a metal layer made of a different metal material. Are a plurality of layers (see transfer member 15a in FIG. 4) formed so as to be in contact with each other. However, in FIG. 10, the second metal film 27 is described as a single-layer metal film for easy understanding of the drawing.

  In this state, as shown in FIG. 10B, the second metal film 27 of the transfer member 15 is formed on the pressing member 16 made of, for example, transparent glass, which can transmit laser light well. It is lowered from the direction of the main surface facing the main surface, that is, from above the base material 26 of the transfer member 15. Then, the transfer member 15 can be pressed to the pattern component 2 side via the pressing member 16, and the second metal film 27 and the wiring 24 including the defective portion 24a can be brought into close contact with each other. At this time, it is preferable that the correction portion is completely brought into close contact so that bubbles do not enter. For this purpose, the surface pressure of the pressing member 16 is optimally adjusted. Usually, since the length of the defect portion 24a is as small as several tens of μm, the pressing range is preferably set to the minimum necessary range. Actually, the second metal film 27 is formed on the wiring 24 including the defect portion 24a. The region to be adhered is preferably 50 μm to 200 μm in diameter, or 50 μm square to 200 μm square. By arranging the spherical convex surface 16a forming the pressing member 16 to be a surface in contact with the transfer member 15, the pressing range can be limited to the minimum necessary. In addition, the second metal film 27 formed on the transfer member 15 can be more closely attached to the defective portion 24a. For this reason, in the step (S40) to be described later, an alloy layer can be easily formed and fixed on the adhesion boundary surface between the first metal film and the second metal film 27 that form the original wiring 24. In this case, as the pressing member 16 having the convex surface 16a, for example, a plano-convex lens may be used, or a flat plate-like pressing member 16 having no convex surface 16a may be used. The pressing is performed using the pressing means 10 shown in FIG.

  And the process (S40) of irradiating a laser beam is implemented. Specifically, the second metal film 27 is pressed onto the wiring 24 including the defective portion 24a by the pressing member 16, and the second metal film 27 and the wiring 24 including the defective portion 24a are brought into close contact with each other ( In the state shown in FIG. 10B, the second metal film 27 in contact with the defect portion 24a, which is the transfer range, is irradiated with laser light from above the pressing member 16. Then, the adhesion boundary surface of the second metal film 27 in contact with the defect portion 24 a is melted by the laser beam, and an alloy layer of the second metal film 27 and the first metal film constituting the wiring 24 is formed. As a result, the second metal film 27 is firmly fixed to the defect portion 24a. Next, the step (S40) will be described in detail.

  FIG. 10C is a schematic diagram illustrating a state in which laser light is irradiated in a state where the transfer member is in close contact with the defective portion of the wiring. As shown in FIG. 10C relating to the step (S40), the second metal film 27 is pressed and brought into close contact with the pressing member 16 via the base material 26 of the transferring member 15, and Laser light 29 (for example, YAG second harmonic CW laser) is irradiated from the direction facing the second metal film 27, that is, from above the pressing member 16. The irradiation range of the laser beam 29 is set, for example, by passing through the slit mechanism 5c described above (not shown). The second metal film 27 in the correction region is heated by the laser light 29 that has passed through the substrate 26, and at the contact boundary surface between the first metal film that forms the wiring 24 and the second metal film 27, The metal melts to form an alloy layer and adhere.

  The disconnected defect 24a is in a state in which the first metal film that forms the wiring 24 is missing and a region located below the first metal film, for example, glass or silicon oxide constituting the substrate 23 is exposed. In some cases. In this case, at the contact boundary surface between the glass or silicon oxide and the transfer member 15, Si—OH contained in the contact boundary surface (the surface of the glass or silicon oxide located below the wiring 24) and the transfer member 15 are formed. Interfacial reaction, for example, silanol bonding, occurs between the second metal film 27 that is pressed and adhered, and is firmly fixed chemically. In this case, for example, zinc, zinc alloy (for example, zinc aluminum alloy), tin, tin alloy (as the material of the second metal film 27 formed on one main surface of the base 26 serving as the base of the transfer member 15 ( It is preferable to use a low melting point metal such as a gold-tin alloy. In addition to the silanol bond, the interface reaction includes, for example, an anchor effect in which each material enters and adheres to the concavo-convex portion of the adhesion boundary surface.

  Therefore, even if the broken defect portion 24a does not include the first metal film that forms the wiring 24 and the substrate 23 is exposed, the material for forming the substrate 23 and the transfer member 15 By fixing the second metal film 27 to the second metal film 27 by silanol bonding, the second metal film 27 can be transferred and fixed also in the defect portion 24a. As described above, the effect of fixing between the surface layer of the substrate 23 and the second metal film 27 of the transfer member 15 is particularly remarkable when the surface layer of the substrate 23 is formed of glass or silicon oxide. become.

  In addition, a metal material that can transfer the second metal film 27 to the defective portion 24a even when the substrate 23 and the base material 26 are heated to a temperature lower than the heat-resistant temperature in the irradiation with the laser light 29 is selected as the second metal film 27. It is preferable to do. That is, it is preferable that the second metal film 27 has a melting point equal to or lower than the heat resistance temperature of the substrate 23 and the base material 26.

  Finally, a step of removing the transfer member 15 in close contact with the pattern component 2 is performed by a step of removing the transfer member (S50). FIG. 10D is a schematic diagram showing the state of the pattern after the defect portion has been corrected. FIG. 10D is a schematic diagram relating to the step (S50). After irradiating the laser beam 29, the pressing by the pressing member 16 is released, and then the transfer member 15 is peeled and retracted upward from the pattern component 2. Then, as shown in FIG. 10D, the second metal film 27 of the transfer member 15 is transferred to the defect 24a only in the region irradiated with the laser beam 29, and the correction layer 27d remains. Since the correction layer 27d is transferred with substantially the same film thickness as the second metal film 27, even if there is a stepped portion in the defect portion 24a as shown in FIG. 10D, the film thickness of the correction layer 27d. Is uniform, and conduction is ensured with low electrical resistance simultaneously with transfer. As described above, when the pattern correction apparatus 1 according to Embodiment 1 of the present invention is used, the second metal film 27 formed on one main surface of the base member 26 of the transfer member 15 includes the defect 24a. The defect can be corrected by being heated by laser while being in close contact with the wiring 24 and being melted and fixed at the contact boundary surface between the defect portion 24a and the second metal film 27, or firmly fixed by silanol bonding. Therefore, it is possible to form the correction layer 27d having a uniform film thickness even in a single transfer process, and to lower the electrical resistance.

  FIG. 11 is a schematic view showing the pattern component in a state where the correction layer made of the second metal film formed on the surface of the transfer member is transferred to the defective portion of the pattern. In general, as shown by the pattern component 2 in FIG. 11, the correction layer 27 d is formed so that the width of the correction layer 27 d (cross-hatching layer) is substantially the same as the width of the wiring 24. In addition, when the protrusion from the width | variety of the wiring 24 is accept | permitted, you may become thicker than the width | variety of the wiring 24. FIG. Moreover, although it may be narrower than the width of the wiring 24, in this case, it is preferable to set the electrical resistance of the corrected wiring 24 to be equal to or less than the design value. The shape of the correction layer 27d may be shaped using the first laser light source 7 described above after transfer.

  In some cases, burrs or the like may occur around the correction layer 27d transferred to the defective portion 24a. In this case, the laser beam 29 is again applied to the entire correction layer 27d with respect to the pattern component 2 in the state shown in FIG. And the entire correction layer 27d may be heated to melt and remove burrs. Further, by heating again, the adhesion between the correction layer 27d and the substrate 23 can be further strengthened. Here, when heating again, it is more preferable to prevent oxidation of the correction layer 27d by blowing nitrogen gas or the like to the correction layer 27d, for example.

  FIG. 12 is a schematic view showing a state in which a laser beam focused in a spot shape is irradiated while scanning while the transfer member is in close contact with a defective portion of the wiring. In FIG. 10C, the irradiation range of the laser beam 29 is determined using the slit mechanism 5c, and batch irradiation is performed. On the other hand, as shown in FIG. 12, the laser beam 29a is heated while scanning over the second metal film 27 in a state where the laser beam 29a is condensed (squeezed), for example, in a spot shape having a diameter of about 5 μm to 30 μm. May be. Using this method, the correction layer 27d having a required length can be obtained by scanning the laser beam 29a by a required length. In this case, the width of the correction layer 27d is determined by the diameter (region to be irradiated) of the laser light 29a.

  The above description has been made using a transfer member in which the second metal film 27 is a single layer (single layer), such as the transfer member 15 shown in FIG. However, even when correction is performed using a transfer member in which the second metal film 27 is formed of a plurality of layers, such as the transfer member 15a and transfer member 15b shown in FIGS. Correction is performed in the same manner as in FIG. Here, an outline of a transfer form using the transfer member 15a (see FIG. 4) in which the second metal film 27 has a two-layer structure will be described.

  On the one main surface of the base member 26 of the transfer member 15a, as shown in FIG. 4, a second metal having a two-layer structure consisting of a base material film 27a and an antioxidant metal film 27b from the inner side. A film 27 is formed. For example, the base material film 27a is made of a zinc-aluminum alloy, and the antioxidant metal film 27b is made of a gold-tin alloy. The gold-tin alloy used as the antioxidant metal film 27b has a lower melting point than the zinc-aluminum alloy used as the base material film 27a. For this reason, at the time of heating with the laser beam 29 or the laser beam 29a, the gold-tin alloy is first melted at the adhesion boundary surface between the gold-tin alloy and the first metal film forming the wiring 24, and the alloy layers are formed. Form and stick. In particular, since gold is an easily diffusing material, gold diffuses in the first metal film in contact with the gold-tin alloy or in the zinc-aluminum alloy, and these films are firmly fixed.

  Since the melting point of the gold-tin alloy whose mass% ratio is Au: Sn = 80: 20 is as low as about 280 ° C., the entire pattern component 2 is heated to a temperature of about 300 ° C. to 350 ° C. in the subsequent process after the defect 24a is corrected. In the case of treating with, there is a concern about remelting of the gold-tin alloy. However, as described above, the gold-tin alloy formed for oxidation prevention is very thin. When the first metal film forming the wiring 24 and the base material film 27a of the transfer member 15a are melted and alloyed, the melting point of the alloy layer is higher than the melting point of the single body. Therefore, melting due to reheating becomes difficult to occur. Furthermore, since the zinc aluminum alloy (melting point is around 350 ° C. to 400 ° C.) having a higher melting point than that of the gold-tin alloy remains as it is, there is no influence such as remelting by heating it again. Gold-tin alloys are non-oxidizing and are often used as bonding materials with metal materials. Therefore, it is possible to maintain a close contact state of the wiring 24 with respect to the defective portion 24a. As described above, even when the transfer member 15a in which the metal material to be transferred has a two-layer structure is used, the defective portion 24a can be transferred and corrected satisfactorily.

(Embodiment 2)
FIG. 13 shows a transfer member for suppressing heat radiation to a region where the second metal film does not need to be melted. From the main surface side where the second metal film is not formed on the base material. It is the schematic which shows the state seen. In FIG. 13 and subsequent figures, the second metal film 27 has a two-layer structure as an example. However, the first metal layer 27 and the three-layer structure are the same. FIG. 14 is a schematic sectional view taken along line XIV-XIV in FIG. For example, the pattern correction method using the transfer member 15 (see FIG. 3), 15a (see FIG. 4), and 15b (see FIG. 5) in the first embodiment of the present invention described above is performed on one main surface of the substrate 26. In the state where the second metal film 27 is formed on the entire surface, only the necessary region such as the defect 24a (see FIG. 2) or the laser beam 29 (see FIG. 10C) or the laser beam 29a (see FIG. 12). ) Is transferred to the defective portion 24a of the wiring 24 (see FIG. 2). On the other hand, as shown in FIG. 14, in the transfer member 15c, the second metal film 27 formed on one main surface of the substrate 26 is a second metal film having a size necessary for correction. The surrounding second metal film 27 is removed so as to leave 27P, thereby forming a gap 35. In this way, by partially removing the second metal film 27, a metal film region independent of the surrounding region is formed via the gap 35.

  By using the transfer member 15c having such a structure, for example, even if the second metal film 27P in close contact with the defect 24a is irradiated with the laser beam 29 or the laser beam 29a and heated, the second metal film 27P is used. Since there is no second metal film 27 around and is insulated by the gap 35, heat radiation to the surrounding area can be prevented. Therefore, the power of the laser beam 29 or the laser beam 29a can be kept low. Further, since the laser power can be reduced, when the base material 26 formed on one main surface of the transfer member 15 is, for example, a polyimide film, damage such as the base material 26 being burnt and carbonized is prevented. be able to. As described above, the second metal film 27P in the length that needs to be corrected, that is, the transfer range, can be transferred to the defective portion 24a.

  Further, since the second metal film 27P has already been formed in accordance with the shape for correcting the defect 24a, the peelability from the base material 26 is also good. Furthermore, since the second metal film 27P is transferred to the defect portion 24a in the same shape, the width of the correction layer 27d (see FIG. 11) becomes uniform. For this reason, the quality and reliability of the corrected pattern component 2 (see FIG. 11) can be improved. Here, the gap 35 can be formed, for example, by removing the second metal film 27 by laser ablation with a YAG second harmonic pulse laser. The width of the gap 35 may be set to such an extent that heat is not transferred to the second metal film 27 on the outer periphery of the gap 35 when the second metal film 27P is heated.

  FIG. 15 shows a transfer member in which a second metal film is formed in advance in a pattern according to the shape for correcting a defective portion, and the main surface on which the second metal film is not formed on the substrate It is the schematic which shows the state seen from the side. 16 is a schematic cross-sectional view taken along line XVI-XVI in FIG. FIG. 17 shows a transfer member in which the second metal film is continuously formed with a width necessary for correcting the defective portion, for example, approximately the same width as the wiring, as viewed from the same direction as FIG. It is the schematic which shows a state. 18 is a schematic sectional view taken along line XVIII-XVIII in FIG.

    In the transfer member 15c shown in FIGS. 13 and 14, the second metal film 27 is first formed on the entire main surface of the substrate 26, and then the gap 35 is formed by laser ablation. A second metal film 27P in which the second metal film 27 is patterned is formed on the inner side of 35 (the central portion of the base material 26). On the other hand, the patterned second metal film 27 in the transfer members 15d and 15e shown in FIGS. 15 to 18 is, for example, a method of performing vacuum deposition or sputtering treatment through a mask, or a second method. The metal film 27 can be formed by performing exposure and development after forming the metal film 27 on the entire main surface of one of the substrates 26. When the defective portion 24a is corrected using the transfer member 15e shown in FIGS. 17 and 18, the pattern of the second metal film 27 as a patterned transfer region for correction overlaps the upper portion of the defective portion 24a. Align. Then, in a state where the second metal film 27 is pressed and adhered by the pressing member 16 through the base member 26 of the transfer member 15e, the direction of the transfer member 15e facing the second metal film 27, that is, the pressing member. The laser beam 29 or the laser beam 29a is irradiated from above 16 and heated. As described above, the second metal film 27 having a length that needs to be corrected, that is, the transfer range, can be transferred to the defective portion 24a.

  Also in this case, the thin film made of the second metal film 27 is patterned and insulated as an independent metal film region. For this reason, at the time of a heating, the thermal radiation to the surrounding area | region is suppressed. As a result, it is possible to set the intensity of irradiation with the laser light 29 to be low, and for example, it is possible to prevent damage such as the base material 26 being burnt and carbonized.

  In this case, since the second metal film 27 is formed long in the extending direction, the length used for one transfer correction is a part of the second metal film 27. Therefore, it is possible to perform transfer correction by moving the location of the transfer member 15e and changing the position of the second metal film 27. Therefore, a plurality of defects are formed using one patterned second metal film 27. It becomes possible to correct the part 24a.

  FIG. 19 shows a transfer member having a plurality of patterned second metal films, and is a schematic view showing a state viewed from the main surface side where the second metal film is not formed on the substrate. It is. 20 is a schematic cross-sectional view taken along line XX-XX in FIG. FIG. 21 shows a transfer member having a plurality of patterned second metal films described with reference to the transfer member of FIG. 17, and is a schematic view showing a state viewed from the same direction as FIG. 22 is a schematic cross-sectional view taken along line XXII-XXII in FIG.

  The transfer members 15d and 15e shown in FIGS. 15 to 18 have a single patterned second metal film 27, but the transfer members 15f and 15g shown in FIGS. A plurality of patterned second metal films 27 are formed on one main surface. Therefore, a plurality of defect portions 24a can be corrected while selecting each second metal film 27.

  As described above, a transfer member (15c to 15g) in which the second metal film 27 is patterned in advance while leaving the second metal film 27 having a width necessary for correcting the defect 24a can be used. Good. The pattern length may be formed to a length that requires defect correction, that is, a length equal to the transfer range, such as the transfer member 15d shown in FIGS. 15 and 16, or the transfer length shown in FIGS. It may be a continuous pattern like the member 15e. Moreover, you may arrange | position the 2nd metal film 27 in which the several pattern which changed size was formed.

  Each of the transfer members (15 and 15a to 15g) described above may be used while being wound around a roll as a roll if the substrate 26 is a resin film such as polyimide. Further, when the base material 26 is a small piece, the base material 26 may be supported and used so that it can be moved relative to the defective part 24 a above the defective part 24 a of the wiring 24.

  The second embodiment of the present invention is different from the first embodiment of the present invention in each point described above. That is, in the description of the second embodiment of the present invention, the configurations, conditions, processes, and the like not described above are all in accordance with the first embodiment of the present invention.

  In the pattern correction method using the transfer member (15 and 15a to 15g) described above, the second portion of the defect 24a that is disconnected due to the defect of the first metal film that forms the original wiring 24 is applied to the second portion. With the metal film 27 in close contact, heating is performed by irradiation with the laser beam 29 or the laser beam 29a. Then, the first metal film and the second metal film 27 of the transfer member 15 are fixed by melting at an adhesion boundary surface to form an alloy layer. Therefore, the defect 24a can be easily corrected so that the film thickness of the correction layer 27d becomes uniform only by performing the steps (S10) to (S50) described above once. In addition, since the alloy layer is formed by melting at the adhesion boundary surface between the first metal film of the wiring 24 and the second metal film 27 of the transfer member 15, the adhesiveness is good, and the defect portion 24a Electric resistance can be lowered. Therefore, the pattern component 2 in which the defective portion 24a of the pattern such as the wiring 24 is corrected, for example, a TFT substrate or a printed circuit board has a function equivalent to that of the pattern component 2 that does not originally have the defective portion 24a, and is usually highly reliable. It can be used as a non-defective part.

  The corrected layer 27d that has been corrected has good adhesion to the defect portion 24a, and thus the pattern correction method described above can be used for correcting the defect of the exposure mask. In this case, the second metal film 27 of the transfer member (15 and 15a to 15g) is transferred to a region wider than the defect portion 24a, and then the end of the transferred second metal film 27 is cut into a second one for cutting. It is preferable to perform a step of shaping so that the second metal film 27 exists only in a desired region by cutting using one laser light source 7 (see FIG. 7).

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention does not require repetitive operations for pattern defects such as wiring formed on a TFT substrate, and is a uniform and low electric resistance by thermally transferring a metal film having a sufficient thickness in a simple process. It is particularly excellent as a technique for a pattern correction method for obtaining a film thickness correction layer.

It is a flowchart which shows the procedure of each process of a pattern correction method. It is the schematic which shows the pattern components which have the defect part which a part of pattern has disconnected by the defect | deletion. It is the schematic which shows the structure of the transfer member which corrects the pattern, for example, the defective part of wiring. It is the schematic which shows the structure of the transfer member in which the metal film for antioxidant was formed as a metal layer of the outermost surface of a 2nd metal film. FIG. 5 is a schematic diagram showing the structure of a transfer member having a three-layer structure in which a light-absorbing layer made of a metal layer having a good light-absorbing property is added between the base material and the base material film in the two-layer structure shown in FIG. is there. It is the schematic of the pattern correction apparatus which implement | achieves the pattern correction method of this invention. It is the schematic which shows the internal structure of the principal part of the pattern correction apparatus shown in FIG. It is the schematic which shows the modification of a structure of the principal part of the pattern correction apparatus shown in FIG. It is the schematic which shows the structure of a press means. (A) It is the schematic which shows the state which made the press member and the transfer member confront the range containing the defect part of pattern components. (B) It is the schematic which shows the state which lowered | lowered the press member and pressed the transfer member to the downward direction, and was closely_contact | adhered to the range including the defect part of pattern components. (C) It is the schematic which shows the state which irradiated the laser beam in the state which closely_contact | adhered the transfer member to the defective part of wiring. (D) It is the schematic which shows the state of the pattern after finishing correction of a defective part. It is the schematic which shows the pattern components of the state by which the correction layer which consists of a 2nd metal film formed on the surface of the transfer member was transcribe | transferred to the defect part of the pattern. It is the schematic which shows the state irradiated, scanning the laser beam narrowed down to the spot shape in the state which closely_contact | adhered the transfer member to the defective part of wiring. The transfer member for suppressing the heat dissipation to the area | region which does not require the fusion | melting of a 2nd metal film is shown, The state seen from the main surface side in which the 2nd metal film is not formed with respect to a base material FIG. It is a cross-sectional schematic diagram in line segment XIV-XIV of FIG. The transfer member in which the second metal film is formed in a pattern in advance in accordance with the shape for correcting the defect portion is shown, as viewed from the main surface side where the second metal film is not formed on the substrate. It is the schematic which shows a state. It is a cross-sectional schematic diagram in line segment XVI-XVI of FIG. FIG. 16 is a schematic diagram illustrating a transfer member in which a second metal film is continuously formed with a width necessary for correcting a defective portion, for example, approximately the same width as a wiring, and viewed from the same direction as FIG. 15. is there. It is a cross-sectional schematic diagram in the line segment XVIII-XVIII of FIG. It is the schematic which shows the transfer member which has two or more patterned 2nd metal films, and the state seen from the main surface side in which the 2nd metal film is not formed with respect to the base material. It is a cross-sectional schematic diagram in line segment XX-XX of FIG. FIG. 18 shows a transfer member having a plurality of patterned second metal films described with reference to the transfer member of FIG. 17, and is a schematic view showing a state viewed from the same direction as FIG. 17. It is a cross-sectional schematic diagram in line segment XXII-XXII of FIG.

Explanation of symbols

  1 pattern correction device, 2 pattern parts, 3 XY stage, 4 Z stage, 5 observation optical system, 5a mirror, 5b beam splitter, 5c slit mechanism, 5d beam splitter, 5e imaging lens, 5f beam splitter, 5g objective lens, 5h CCD camera, 5i slit light illumination, 5j epi-illumination, 6 monitor, 7 first laser light source, 8 second laser light source, 9 transfer member supply means, 10 pressing means, 11 image processing section, 12 host computer, 13 Computer for control, 14 chuck, 15 transfer member, 15a transfer member, 15b transfer member, 15c transfer member, 15d transfer member, 15e transfer member, 15f transfer member, 15g transfer member, 16 pressing member, 16a convex surface, 17 base plate, 18 Moving plate, 19 Linear slide 20 pressure plate, 20a through hole, 21 linear slide, 22 drive means, 22a output shaft, 23 substrate, 24 wiring, 24a defective part, 26 base material, 27 second metal film, 27a base material film, 27b antioxidant Metal film, 27c light absorption layer, 27d correction layer, 27P second metal film, 29 laser light, 29a laser light, 35 void.

Claims (13)

A pattern correction method for correcting a defective portion of a pattern formed on the surface of a substrate,
A first metal film that forms the pattern and a second metal film that can be fixed by melting by heating to form an alloy layer on one main surface of a substrate that can transmit laser light. A step of confronting the defective portion with the transfer member formed with at least one layer;
Adhering the second metal film to the defect portion;
Irradiating the laser beam from above the base material of the transfer member to the range including the defect portion in a state where the second metal film is in close contact with the defect portion including the first metal film; With
In the step of irradiating with the laser beam, the laser beam melts at an adhesion boundary surface between the second metal film and the first metal film, and the second metal film and the first metal film A pattern correction method in which an alloy layer is formed and fixed. In the step of bringing the second metal film into close contact with the defect portion,
Using the pressing member capable of transmitting the laser beam from the other main surface direction of the transfer member facing the one main surface on which the second metal film is formed, the transfer member is directed to the substrate. The pattern correction method according to claim 1, wherein the pattern is pressed.   The pattern correction method according to claim 2, wherein the pressing member has a spherical surface in contact with the transfer member.   A region located below the pattern in the substrate is formed of glass or silicon oxide, and in the step of irradiating the laser beam, between the Si—OH present on the surface of the region and the second metal film The second metal film adheres to the surface of the region where the first metal film of the defective portion is missing by causing an interfacial reaction between them. Pattern correction method.   The pattern correction method according to claim 1, wherein a melting point of the second metal film is equal to or lower than a heat resistant temperature of the base material.   The second metal film is formed in a plurality of layers so that metal layers made of different metal materials are in contact with each other, and the outermost metal layer of the second metal film is formed below the outermost metal layer. An anti-oxidation metal film that prevents other metal layers that are positioned from being oxidized; and the alloy layer of the second metal film and the first metal film includes the plurality of layers. The pattern correction method according to claim 1, wherein the pattern correction method includes a constituent material material.   The pattern according to claim 6, wherein a melting point of a material forming the antioxidant metal film is lower than a melting point of a material forming the other metal layer, which is a layer located under the antioxidant metal film. How to fix.   The pattern correction method according to claim 1, wherein the laser beam is continuously oscillated.   In the step of irradiating with the laser beam, the shape of the irradiation region of the laser beam is determined by adjusting using a slit provided in the optical path of the laser beam. 2. The pattern correction method according to item 1.   The pattern correction method according to claim 1, wherein in the step of irradiating the laser beam, the laser beam focused in a spot shape is scanned within a range in which the defect portion is corrected. In the step of facing the transfer member to the defective portion, the second metal film is partially removed or the second metal film is partially not formed, so that a void is formed from the surrounding area. Using the transfer member on which an independent metal film region is formed,
The pattern correction method according to claim 1, wherein in the step of closely contacting the defect portion, the independent metal film region is closely contacted on the pattern including the defect portion.   The pattern correction method according to claim 1, wherein the defective portion is a defective portion in a wiring pattern of a TFT substrate.   A pattern component comprising the pattern corrected by using the pattern correction method according to claim 1.

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