JP5112061B2 - ウエハ処理方法およびシステム - Google Patents
ウエハ処理方法およびシステム Download PDFInfo
- Publication number
- JP5112061B2 JP5112061B2 JP2007520431A JP2007520431A JP5112061B2 JP 5112061 B2 JP5112061 B2 JP 5112061B2 JP 2007520431 A JP2007520431 A JP 2007520431A JP 2007520431 A JP2007520431 A JP 2007520431A JP 5112061 B2 JP5112061 B2 JP 5112061B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- station
- load
- carrier
- spindle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3302—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
いくつかの慣用の化学機械研磨処理は、プラテン上に位置決めされた単一の大きな研磨パッドを有し、基板が研磨のためにこれに対向して位置決めされる装置を用いる。位置決め部材は、研磨される基板を位置決めし回転する研磨パッドに対して付勢する。化学スラリーは、研磨材料を有すことがあり、一般的には研磨パッド上に保持されて研磨パッドの研磨特性を修正し、基板又は膜の研磨を増進する。
本実施形態は、この複雑で面倒な処理を張力がロードステーション230の付勢が調整される範囲内で許容することにより回避する。
一部の他の以前のシステムは、コンディショナのコンディショニング端部でモータとギアボックスを一般に採用し、それは、スピンドルとキャリアの一方又は両方の動きと干渉する。この構成はまた、モータが含まれることを許容し、研磨処理の要素から
離れている。
が採用され得る。
処理されたウエハが垂直に保管されることを許容する一時的なウエットバッファ3252を付加的に含む。再び、6軸ロボット220は、垂直な位置へのディスクの回転を許容する。度々ウエハを垂直に保管することが好ましい場合には、特に、ウエハをウエットな状態で保管するときに、粒子が表面に付着しない。付加的なエンドエフェクタ3260は、一部の実施形態に含められ、例えば、使用すべきロボットのツールチェンジャ上の多くの異なる構成を許容するウエハスキャニング棒である。
(Fspindle−Fwafer+Fretaining ring)
Fspindle=Fwafer−Fretaining ring;
ここで、Fspindleは、キャリアに作用するスピンドルからの力に等しく、Fwaferは、ウエハに作用するスピンドルからの一部の力に等しく、そして、Fretaining ringは、保持リングに作用するスピンドルからの一部の力に等しい。ウエハ力3422に保持リング力3426を加えると、実質的に合計のスピンドル力3420に等しくなるので、これらの力の値の一つは、方程式において3つの力の他の2つの値を知ることにより、計算され得る。
Claims (8)
- 処理のための対象物を保管する保管装置と連結するフロントエンドモジュールであって、単一のロボットと、複数のエンドエフェクタと、前記単一のロボットが前記複数のエンドエフェクタを交換しながら前記対象物を位置決めする搬送ステーションとを有し、前記単一のロボットは前記複数のエンドエフェクタを交換する際に前記複数のエンドエフェクタの一つを離脱させるとともに前記複数のエンドエフェクタの他のエンドエフェクタを係合させるフロントエンドモジュールと、
前記単一のロボットが前記保管装置から対象物を供給するように前記フロントエンドモジュールと連結された処理モジュールであって、前記単一のロボットが前記処理モジュールへ対象物を供給するロードステーションと、回転テーブルと、供給された対象物を取り出し、前記回転テーブル上で前記対象物を処理するように構成されたキャリアをもつスピンドルとを備える処理モジュールと、
を備えるシステム。 - 前記搬送ステーションは、対象物が床に対して垂直に位置決めされるように構成されている、請求項1に記載のシステム。
- 前記フロントエンドモジュールは、処理された後の前記対象物を受け入れるウエット容器をさらに備える、請求項2に記載のシステム。
- 前記処理モジュールは、リニアレールアセンブリを備える、請求項1に記載のシステム。
- 前記ロードステーションは、面取り面を備えるロードガイドリングを備える、請求項4に記載のシステム。
- 前記キャリアは、前記ロードガイドリングの面取り面と協働して前記キャリアを前記ロードステーションと整列させる面取りされた保持リングを備える、請求項5に記載のシステム。
- 前記リニアレールアセンブリは、前記ロードステーションの一部分が前記キャリアと協働している際に相対的に中央位置へシフトするのを許容する、請求項4に記載のシステム。
- 前記ロードステーションは、前記キャリアが前記ロードステーションから前記対象物を取り出している際に、前記ロードステーションの前記一部分を実質的に中央位置へ復帰させる付勢ばねを備える、請求項7に記載のシステム。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58549704P | 2004-07-02 | 2004-07-02 | |
| US60/585,497 | 2004-07-02 | ||
| PCT/US2005/023772 WO2006014411A1 (en) | 2004-07-02 | 2005-07-01 | Method and system for processing wafers |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011150988A Division JP2011249820A (ja) | 2004-07-02 | 2011-07-07 | ウエハ処理方法およびシステム |
| JP2012105435A Division JP2012199558A (ja) | 2004-07-02 | 2012-05-02 | ウエハ処理方法およびシステム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008506537A JP2008506537A (ja) | 2008-03-06 |
| JP2008506537A5 JP2008506537A5 (ja) | 2008-08-21 |
| JP5112061B2 true JP5112061B2 (ja) | 2013-01-09 |
Family
ID=35787405
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007520431A Expired - Fee Related JP5112061B2 (ja) | 2004-07-02 | 2005-07-01 | ウエハ処理方法およびシステム |
| JP2011150988A Pending JP2011249820A (ja) | 2004-07-02 | 2011-07-07 | ウエハ処理方法およびシステム |
| JP2012105435A Pending JP2012199558A (ja) | 2004-07-02 | 2012-05-02 | ウエハ処理方法およびシステム |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011150988A Pending JP2011249820A (ja) | 2004-07-02 | 2011-07-07 | ウエハ処理方法およびシステム |
| JP2012105435A Pending JP2012199558A (ja) | 2004-07-02 | 2012-05-02 | ウエハ処理方法およびシステム |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7249992B2 (ja) |
| JP (3) | JP5112061B2 (ja) |
| KR (1) | KR20070058445A (ja) |
| CN (1) | CN101023429B (ja) |
| WO (1) | WO2006014411A1 (ja) |
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| CN101023429A (zh) | 2007-08-22 |
| US8565919B2 (en) | 2013-10-22 |
| JP2012199558A (ja) | 2012-10-18 |
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