JP5115463B2 - Plasma processing equipment - Google Patents

Description

  The present invention relates to a plasma processing apparatus.

  As one of methods for processing the surface of a material, a reaction gas is supplied between electrodes to which a voltage or a high frequency is applied, a radical based on the reaction gas is generated, and a product generated by a radical reaction between the radical and a workpiece A so-called plasma chemical machining (hereinafter, abbreviated as “plasma CVM”) is known in which processing is performed by removing slag.

  In such plasma CVM, a method of performing plasma processing on a surface to be processed of a workpiece while changing the positional relationship by scanning an electrode or a workpiece is performed (for example, Patent Document 1).

Further, based on the pre-processing shape data and the target shape data before the plasma processing of the surface to be processed of the workpiece, the drive of the moving mechanism such as the relative scanning speed and stop time of the processing apparatus and the workpiece is controlled (numerical control: NC), and a plasma processing apparatus for performing plasma processing has been proposed (for example, Patent Document 2). The shape data before processing is acquired in a separate process before the plasma processing.
Japanese Patent Laid-Open No. 1-125829 JP-A-4-246184

  However, in the above configuration, after the pre-processing shape data is acquired in a separate process, the position of the workpiece may be shifted between the acquisition of the pre-processing shape data and the plasma processing. For example, depending on the shape of the table on which the workpiece is placed, the shape of the workpiece may change if the position on which the workpiece is placed shifts even a little. For this reason, this is an obstacle to high-precision processing.

  In view of the circumstances as described above, an object of the present invention is to provide a plasma processing apparatus capable of improving the machining accuracy of a workpiece.

  In order to achieve the above object, a plasma processing apparatus according to the present invention relates to a stage device that can move while holding a workpiece, and to the shape of the workpiece by irradiating the workpiece with light and using reflected light from the workpiece. An acquisition device that acquires information, a processing device that irradiates the workpiece with plasma and processes the workpiece using the information, and a control device that causes the stage device to access each of the acquisition device and the processing device It is characterized by providing.

  According to the present invention, since the stage device accesses each of the acquisition device and the processing device while holding the workpiece, the stage device has a case where the workpiece information is acquired and the case where the workpiece is processed. The position of the workpiece can be held. As a result, when processing is performed using information acquired by the acquisition device, the acquired shape matches the actual shape of the workpiece on the stage device. For this reason, when it processes based on the acquired shape, the highly accurate process along the said information can be performed. Thereby, the processing precision of a workpiece | work can be improved. In addition, since acquisition and processing of information can be performed continuously, there is an advantage that processing time can be shortened and throughput can be improved.

In the plasma processing apparatus, the control apparatus moves the stage apparatus in a state where the stage apparatus is accessed by at least one of the acquisition apparatus and the processing apparatus.
According to the present invention, since the control device moves the stage device in a state where the stage device is accessed by at least one of the acquisition device and the processing device, the workpiece and each device in the acquisition device and the processing device. Relative movement between the two can be easily performed.

In the plasma processing apparatus, the control device controls the movement based on the information in a state where the stage device is accessed by the processing device.
According to the present invention, since the control device controls the movement of the stage device based on the acquired information in a state where the stage device is accessed by the processing device, the processing is performed according to the acquired information. Can be made.

In the plasma processing apparatus, the movement control includes a movement speed control of the stage apparatus.
According to the present invention, since the movement control includes the movement speed control of the stage device, high-accuracy machining according to the acquired information is possible.

The plasma processing apparatus may further include a sensor that detects second information related to the holding position of the substrate, and the control device controls the movement based on the second information.
According to the present invention, the sensor further detects the second information related to the holding position of the substrate, and the control device controls the movement based on the second information. Alignment is possible. Thereby, highly accurate processing can be performed.

In the plasma processing apparatus, the movement control includes control of a movement amount of the stage apparatus.
According to the present invention, since the movement control includes the control of the movement amount of the stage apparatus, more accurate alignment is possible by the movement of the stage apparatus. Thereby, highly accurate processing can be performed.

In the plasma processing apparatus, the light is infrared light.
According to the present invention, since the infrared ray is used as the light irradiated to the workpiece, the configuration of the acquisition device can be simplified.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The predetermined direction in the horizontal plane is the X-axis direction, the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, the direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, the vertical direction) is the Z-axis direction, and the Z-axis The direction of rotation (inclination) around is the θZ direction.

FIG. 1 is a diagram schematically showing the configuration of a plasma processing apparatus according to the present invention.
The plasma processing apparatus PTA includes a stage apparatus ST, an acquisition apparatus AC, a processing apparatus PR, and a control apparatus CONT. The plasma processing apparatus PTA is an apparatus that processes the surface Wf of the workpiece W held by the stage apparatus ST into a predetermined shape using the acquisition apparatus AC and the processing apparatus PR.

  The stage apparatus ST has a table T and a moving mechanism M. The table T is covered with the ground electrode 40. The ground electrode 40 is grounded via a conductor 41 such as a lead wire. The table T has a placement surface Tf on which the workpiece W is placed. The mounting surface Tf is formed on the ground electrode 40 and is, for example, parallel to the XY plane. The table T has a holding mechanism (not shown) that holds the workpiece W on the placement surface Tf. The holding mechanism prevents the workpiece W from being displaced in the X direction and the Y direction on the placement surface Tf.

  The moving mechanism M is an actuator that moves the table T in the X direction and the Y direction. As the moving mechanism M, for example, a linear motor or the like is used. The moving mechanism M can access the table T to both the acquisition device AC and the processing device PR. In addition, the moving mechanism M can move the table T in the acquisition device AC and the processing device PR.

  The acquisition apparatus AC is an apparatus that acquires, for example, the shape of the surface of the workpiece W on the stage apparatus ST as Z coordinate data. The acquisition device AC has a Fourier transform infrared spectroscopy (FTIR) device FA. The FTIR apparatus FA is an apparatus that measures the film thickness of an object by irradiating the object with infrared light and observing the spectrum of reflected light. The FTIR device FA includes a light source device LA that is a light source of infrared light IR and a light receiving device RA that receives reflected light. The operations of the light source device LA and the light receiving device RA are controlled by a control device CONT, for example. The acquisition device AC may have a configuration including a microscope device (not shown).

  The processing apparatus PR is an apparatus that performs surface treatment locally by irradiating the surface PL (surface to be processed) Wf of the workpiece W or the like placed horizontally on the stage apparatus ST with the plasma PL. The processing device PR is provided, for example, adjacent to the acquisition device AC. The processing apparatus PR has a plasma generator PA.

FIG. 2 is a schematic diagram showing the configuration of the plasma generator PA.
As shown in the figure, the plasma generator PA is a device that emits plasma to the workpiece W and processes the surface of the workpiece W with the plasma. The plasma generator PA has a gas flow mechanism 2 and a power electrode mechanism 3.

The gas distribution mechanism 2 has a jacket member 20 and a nozzle mechanism 21.
The jacket member 20 is a cylindrical member formed of an insulator such as ceramic. The jacket member 20 has a gas inlet 20a. The gas inlet 20a is a part for introducing a discharge gas. The gas inlet 20a is connected to a gas supply unit (not shown).

Examples of the discharge gas supplied from the gas supply unit include fluorine atom-containing compound gases such as CF ₄ , C ₂ F ₆ , C ₃ F ₆ , C ₄ F ₈ , CClF ₃ , SF ₆ , Cl ₂ , BCl _3. Various halogen-based gases such as a chlorine atom-containing compound gas such as CCl ₄ can be used. The discharge gas circulates in the space 20K surrounded by the jacket member 20 from the + Z side to the −Z side in the drawing. The jacket member 20 has a through hole 20b at the end on the + Z side.

  The nozzle mechanism 21 is a portion that injects plasma of the discharge gas, and is attached to the −Z side end of the jacket member 20. The nozzle mechanism 21 has an opening 21a at the −Z side end. The plasma of the discharge gas is ejected in the −Z direction through the opening 21a. Around the opening 21a, a suction mechanism 22 for sucking a part of the ejected plasma PL is provided. The suction mechanism 22 has an annular opening 22a provided around the opening 21a. The opening 22a is connected to a suction source (not shown) such as a pump.

  The power electrode mechanism 3 includes a power electrode 30, a connection mechanism 31, and a high frequency power source 32. The power supply electrode 30 is an electrode formed in a rod shape so as to extend in the Z direction by a conductor such as metal. The power electrode 30 is inserted into the space 20K through the through hole 20b of the jacket member 20.

  The connection mechanism 31 is attached to the portion 3 a outside the jacket member 20 in the power supply electrode 30, and connects the power supply electrode 30 and the high frequency power supply 32. A portion 3b of the power supply electrode 30 inserted into the space 20K is covered with an insulating film 30a. The insulating film 30a is made of, for example, ceramic that is the same material as the jacket member 20. Of course, it may be made of other materials.

  A portion 30 b in the through-hole 20 b of the power supply electrode 30 is closed by a seal mechanism 33. Therefore, the upper end portion of the space 20 </ b> K is closed by the jacket member 20, the power supply electrode 30 and the seal mechanism 33.

  The power supply electrode 30 and the ground electrode 40 are in a state of being disposed with the workpiece W interposed therebetween. By setting the power supply electrode 30 and the ground electrode 40 to different potentials, a voltage is applied in the space 20K. When a voltage is applied in the space 20K, the discharge gas flowing in the space 20K is excited and plasma PL is generated.

  The control device CONT comprehensively controls each part of the acquisition device AC, the processing device PR, and the stage device ST. For example, the control device CONT controls the movement of the table T in the X direction and the Y direction. In addition, the control device CONT performs processing of the workpiece W using the gas supply control unit that controls the supply of the discharge gas from a gas supply source (not shown), the storage unit that stores various data, and the processing device PR. A machining plan generation unit for generating the machining plan. Examples of the various data include data used when processing.

Examples of such data include machining trace data, machining amount data, pre-machining shape data, target shape data, machining plan data, and the like.
The machining trace data is data indicating the relationship between the processing time and the machining depth when the workpiece W in a stationary state is irradiated with plasma using the machining apparatus PR.
The processing amount data is data indicating the processing depth when the workpiece W is irradiated with plasma while performing relative movement between the workpiece W and the nozzle mechanism 21.
The shape data before processing is data indicating the dimension (thickness) in the Z direction of the workpiece W in a state where the workpiece W before processing is placed on the table T. The shape data before processing is acquired by the acquisition device AC, for example.
The target shape data is data indicating the target shape of the workpiece W to be processed using the processing apparatus PR.
The processing plan data is data generated based on the processing trace data, processing amount data, pre-processing shape data, and target shape data, and mainly relates to the control amount and control time when controlling each part of the processing apparatus PR. It is data.

Next, the basic operation of the plasma processing apparatus PTA configured as described above will be described.
First, the measurement operation by the acquisition device AC will be described.
The control device CONT aligns the measurement position while moving the table T in the X direction and the Y direction. After the alignment, the control device CONT causes the light source device LA of the FTIR device FA to emit infrared light IR toward the work W held on the table T. The infrared light IR emitted from the light source device LA is applied to the workpiece W. As shown in FIG. 3, the infrared light IR applied to the work W is reflected on each of the front surface Wf and the back surface Wr of the work W. The reflected light IR2 on the front surface Wf and the reflected light IR3 on the back surface Wr cause interference, and the interference light is received by the light receiving device RA.

  This interference light has a reflection spectrum accompanied by a periodic change in reflectance at the workpiece W. FIG. 4 is a graph showing the reflection spectrum. The vertical axis of the graph indicates the intensity of the interference light, and the horizontal axis of the graph indicates the wavelength of the incident light. It is known that the peak period of the intensity of the interference light depends on the thickness of the workpiece W. The control device CONT reads the peak period of the interference light and obtains the thickness of the workpiece W based on the period. When determining the thickness of the workpiece W, data indicating the relationship between the peak period of the interference light and the thickness of the workpiece W is used. For example, the data is stored in the storage unit of the control device CONT.

FIG. 5A and FIG. 5B are flowcharts showing a specific example of the operation procedure of the acquisition apparatus AC in the present embodiment.
In the above measurement operation, the control device CONT causes the acquisition device AC to perform a two-stage measurement operation of background measurement (ST01) and sample measurement (ST02) as shown in FIG. The background measurement is performed when the acquisition device AC is activated. When the acquisition device AC performs the background measurement, the control device CONT performs the basic operation in a state where the background work is held on the table T. As the background work, for example, a substrate obtained by vapor-depositing aluminum on a glass base material, a SUS substrate, or the like can be used.

  Sample measurement is performed on a workpiece W that is actually processed. When the acquisition device AC performs sample measurement, the control device CONT performs the basic operation with the workpiece W held on the table T. FIG. 5B is a flowchart showing a specific procedure for sample measurement. As shown in the figure, in the sample measurement, the control device CONT causes the measurement position to be aligned while moving the table T in the X direction and the Y direction (ST21). After the alignment, the measurement operation is performed (ST22). After the measurement operation, the control device CONT obtains the thickness of the workpiece W at the measurement position based on the peak period of the interference light obtained by the measurement operation (ST23).

  When the control device CONT moves the table T in the X direction and the Y direction, for example, as shown in FIG. 6, it is assumed that the work W is divided into a plurality of areas AR in a matrix shape, for each area AR. The thickness is obtained by detecting the reflected light spectrum. The control device CONT moves the table T so that the light source device LA accesses the area AR of the workpiece W from the most −X side row (bottom row) to the + X side line by line. For example, as illustrated in FIG. 6, the control device CONT moves the table T so that the measurement position sequentially moves in a one-stroke manner with respect to each area AR of the workpiece W.

Next, a basic operation when the workpiece W is processed by the processing apparatus PR will be described.
The control device CONT moves the table T in the X direction and the Y direction, thereby performing alignment between the processing position of the workpiece W and the nozzle mechanism 21 of the processing device PR. After the alignment, the control device CONT supplies the discharge gas into the space 20K of the jacket member 20 and applies a high-frequency voltage between the power electrode 30 and the ground electrode 40.

  When the high frequency voltage is applied, the discharge gas in the space 20K is excited by the energy of the high frequency voltage, and plasma of the discharge gas is generated inside the space 20K. The generated plasma flows in the space 20K in the −Z direction and is ejected from the opening 21a of the nozzle mechanism 21. A chemical reaction occurs between the injected plasma and the surface Wf of the workpiece W, and a part of the surface Wf of the workpiece W is removed. Thus, the surface Wf of the workpiece W is processed.

  The control device CONT irradiates the plasma while moving the table T. By moving the table T, the plasma irradiation position of the workpiece W moves. The control device CONT adjusts the plasma irradiation time in each part of the workpiece W by adjusting the moving speed of the table T. The moving speed of the table T is set in advance according to the machining plan. At a place where the moving speed of the table T is relatively fast, the plasma irradiation time becomes short and the processing depth becomes shallow. At a location where the moving speed of the table T is relatively slow, the plasma irradiation time becomes long and the processing depth becomes deep.

  As shown in FIG. 6, the control device CONT controls the moving speed of the table T for each area AR, assuming that the workpiece W is divided into a plurality of areas AR in a matrix shape, for example. The control device CONT moves the table T so that the nozzle mechanism 21 accesses the area AR of the workpiece W from the most −X side row (bottom row) to the + X side line by line. Specifically, when the table T is moved, the control device CONT moves the table T so that the nozzle mechanism 21 sequentially accesses each area AR of the workpiece W in the manner of one-stroke writing.

  In performing this control, the control device CONT changes the moving speed as necessary for each of the divided areas AR. The control device CONT processes the workpiece W while adjusting the processing depth for each area AR of the workpiece W by repeatedly performing this operation.

Next, a procedure for generating machining plan data for the machining operation performed by the machining apparatus PR will be described. FIG. 7 is a flowchart showing a procedure for generating machining plan data.
As shown in FIG. 7, as the operation of the processing apparatus PR, a processing trace data acquisition step, a processing amount data acquisition step, a pre-processing shape data acquisition step, a target shape data input step, and a processing plan data generation step are performed.

  The processing trace data acquisition step and the processing amount data acquisition step are performed using, for example, a data acquisition work having the same dimensions and made of the same material as the work W to be actually processed. The pre-machining shape data acquisition step, the target shape data input step, and the machining plan data generation step are performed on the workpiece W. Hereinafter, each step will be described in order.

  The machining trace acquisition step is a step for obtaining machining trace data of the data acquisition workpiece. For example, the control device CONT acquires the cross-sectional shape of the data acquisition work for a plurality of processes having different plasma injection times. Based on each acquired cross-sectional shape, the control device CONT obtains the relationship between the processing time and the processing depth, for example, by performing processing such as approximation using a linear function, and acquires the processing trace data. Generally, as the processing time of the workpiece W by plasma becomes longer, a machining trace having a larger machining depth is formed. The control device CONT stores the acquired machining trace data in a storage unit (not shown).

  The machining amount data acquisition step is a step for obtaining machining amount data of the data acquisition work. For example, the control device CONT irradiates the data acquisition workpiece with plasma while relatively moving the nozzle mechanism 21 and the data acquisition workpiece at a constant speed, and acquires the processing depth of the shape of the data acquisition workpiece. The control device CONT assumes that the data acquisition work is divided into a plurality of areas by the same matrix as the work W, and obtains the machining depth for each area. The control device CONT obtains an average value of the processing depth for each region, and acquires the average value as processing amount data. The control device CONT stores the acquired machining amount data in a storage unit (not shown).

  The pre-processing shape data acquisition step is a step of obtaining the pre-processing shape data of the workpiece W. When processing is performed with the workpiece W placed on the table T, the surface shape of the workpiece W may differ depending on the surface shape of the table T. For this reason, the actual surface shape of the workpiece W is acquired in advance for processing.

  In the shape data acquisition step before processing, the control device CONT places the workpiece W on the table T and holds the workpiece W by a holding mechanism (not shown). The control device CONT makes the table T accessible to the acquisition device AC while holding the workpiece W on the table T. After the table T is accessed to the acquisition device AC, the control device CONT acquires the pre-processing shape data by causing the acquisition device AC to perform a sample measurement operation.

  The target shape data input step is a step for inputting the target shape data of the workpiece W to the control device CONT. The input target shape data is, for example, the Z coordinate of each region divided into the same matrix as described above. The control device CONT stores the input target shape data as individual data in a storage unit (not shown).

  The machining plan data generation step is a step of generating machining plan data for the workpiece W based on the machining trace data, the machining amount data, the shape data before machining, and the target shape data. Examples of the processing plan data in the present embodiment include setting data such as the speed of relative movement between the nozzle mechanism 21 and the workpiece W. The control device CONT sets the moving speed for each area divided into the same matrix as described above. The control device CONT stores the generated machining plan data in a storage unit (not shown).

  After the machining plan data is generated by the machining plan data generation step, the control device CONT processes the workpiece W based on the machining plan data. If the position of the workpiece W on the table T is shifted between the shape data step before machining and the machining step, the shape of the workpiece may change depending on the shape of the table on which the workpiece is placed, for example.

  Therefore, in the present embodiment, the control device CONT moves the table T while holding the workpiece W in the pre-processing shape data acquisition step, and processes the table T while maintaining the holding state of the workpiece W. Have access to PR. The control device CONT processes the workpiece W by making the basic operation of the processing device PR described above after the table T is accessed to the processing device PR.

  Since the position of the workpiece W on the table T does not change between the pre-machining shape data acquisition step and the machining step, the state such as the position of the workpiece W on the table T when performing the machining step is the pre-machining shape data acquisition. It becomes the same as the shape data before processing obtained in the step. For this reason, machining is performed in a state in which the shape of the workpiece W on the actual table T matches the shape of the workpiece W obtained from the shape data before machining.

  Thus, according to the present embodiment, since the table T accesses the acquisition device AC and the processing device PR while holding the workpiece W, the shape data before processing of the workpiece W is acquired. When the workpiece W is machined, the state of the workpiece W on the table T can be held. Since the shape of the workpiece W on the table T coincides with the shape data before processing when performing processing using the shape data before processing acquired by the acquisition device AC, the shape data before processing Can be processed with high accuracy. Thereby, the processing precision of the workpiece | work W can be improved. In addition, the acquisition of the shape data before processing and the processing of the workpiece W can be performed continuously, so that the processing time can be shortened and the throughput can be improved.

  Further, according to the present embodiment, since the thickness of the workpiece W can be measured using infrared light, for example, when a quartz substrate is used as the workpiece W, it is finer than when a frequency measuring device is used. The thickness of the workpiece W can be measured for each region. As a result, it is possible to obtain highly accurate pre-processing shape data over the entire workpiece W.

  In the case where a quartz substrate is used as the workpiece W, the configuration using the frequency measuring device is effective when measuring the thickness for each rough region of the workpiece W. For example, since the thickness of the workpiece W can be measured from two viewpoints of a fine area and a rough area by combining measurement using infrared light and measurement using a frequency measuring instrument, the measurement area There is also an advantage that the width of can be expanded. Thereby, shape data before processing can be acquired for a wide range of workpieces W.

  Moreover, when measuring the thickness of the workpiece W made of a quartz substrate using a frequency measuring device, it is difficult to measure the end portion of the workpiece W due to the characteristics of the measuring device. On the other hand, according to this embodiment, since the thickness of the workpiece W is measured using infrared light, the thickness can be reliably measured even at the end portion of the workpiece W.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, each component constituting the plasma processing apparatus PTA can be replaced with any component that can exhibit the same function. Arbitrary components and processes may be added. In addition, the power source used in the present embodiment is not limited to a high frequency power source, and may be a low frequency power source, for example.

  In the above embodiment, the power electrode 30 is described as being arranged on the + Z side of the work W and the ground electrode 40 is arranged on the −Z side of the work W. However, the present invention is not limited to this. Of course, the present invention can be applied even if the power supply electrode 30 and the ground electrode 40 are arranged on the side.

  The use of plasma processing apparatus PTA of the said embodiment is not specifically limited. The plasma processing apparatus PTA of the above embodiment can be applied to, for example, processing and removal of an oxide insulating film, non-strain processing such as glass (quartz), crystal processing and the like. Moreover, it is also possible to apply the plasma processing apparatus PTA of the said embodiment to processings, such as MEMS.

  In the above embodiment, the work W and the data acquisition work are each divided into a plurality of areas in a matrix, and data is acquired or processed for each area. Of course, the data may be continuously acquired or processed on the workpiece W and the data acquisition workpiece.

  In addition to the configuration of the above embodiment, for example, a position detection sensor for detecting the position of the workpiece W is arranged on the table T of the stage device ST, and the X of the table T is determined according to the detection result of the position detection sensor. It may be configured to control movement in the direction and the Y direction. Thereby, since the more exact alignment of the table T is attained, a highly accurate process can be performed. Alternatively, an alignment mark may be formed on the table T, and alignment may be performed using the alignment mark.

  Further, in the above-described embodiment, an example has been described in which the background measurement is performed by the acquisition device AC. However, the present invention is not limited to this example. The background measurement may be performed by directly irradiating the table T with infrared light.

Schematic which shows the structure of the plasma processing apparatus which concerns on embodiment of this invention. The figure which shows the structure of the processing apparatus which concerns on this embodiment. The figure which shows the operation principle of the acquisition apparatus which concerns on this embodiment. The figure which shows the operation principle of the acquisition apparatus which concerns on this embodiment. The flowchart which shows the operation | movement procedure of the acquisition apparatus which concerns on this embodiment. The figure which shows operation | movement of the acquisition apparatus which concerns on this embodiment. The flowchart which shows the operation | movement procedure of the plasma processing apparatus which concerns on this embodiment.

Explanation of symbols

PTA ... Plasma processing device ST ... Stage device T ... Table M ... Moving mechanism AC ... Acquisition device PR ... Processing device CONT ... Control device W ... Work FA ... FTIR device PA ... Plasma generator

Claims (1)

A stage device capable of holding and moving a quartz substrate ;
An acquisition device for acquiring information on the shape of the quartz substrate ;
A processing apparatus for irradiating the crystal substrate with plasma and processing the crystal substrate using the information,
A control device for moving the stage device to each of the acquisition device and the processing device;
The acquisition device includes a shape acquisition unit that irradiates the quartz substrate with infrared light and uses infrared light reflected from the quartz substrate to obtain information about the shape of the quartz substrate, and a plate thickness of the quartz substrate Including frequency measuring means for measuring a frequency corresponding to
The control device moves the stage device in a state where the stage device has entered at least one of the acquisition device and the processing device,
The control device moves the stage device based on the information in a state where the stage device enters the processing device,
The control of the movement includes control of the moving speed of the stage apparatus.

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