JP5186243B2

JP5186243B2 - Steam generator, vapor deposition device

Info

Publication number: JP5186243B2
Application number: JP2008043482A
Authority: JP
Inventors: 敏夫根岸
Original assignee: Ulvac Inc
Current assignee: Ulvac Inc
Priority date: 2007-09-10
Filing date: 2008-02-25
Publication date: 2013-04-17
Anticipated expiration: 2028-02-25
Also published as: JP5008624B2; JP4871833B2; JP5140382B2; JP2009084674A; JP2009084675A; JP2009084663A; JP5201932B2; JP2009084665A; JP5008527B2; JP4889607B2; JP2009084679A; JP2009087931A; JP4974832B2; JP2009084676A; JP2009087910A; JP2009087869A; JP4996430B2

Description

本発明は蒸着材料の蒸気を発生させる蒸気発生装置と、その蒸気発生装置を用いた蒸着装置に関する。 The present invention relates to a steam generator for generating vapor of a vapor deposition material, and a vapor deposition apparatus using the vapor generator.

有機ＥＬ素子は近年最も注目される表示素子の一つであり、高輝度で応答速度が速いという優れた特性を有している。有機ＥＬ素子は、ガラス基板上に赤、緑、青の三色の異なる色で発色する発光領域が配置されている。発光領域は、アノード電極膜、ホール注入層、ホール輸送層、発光層、電子輸送層、電子注入層及びカソード電極膜がこの順序で積層されており、発光層中に添加された発色剤で、赤、緑、又は青に発色するようになっている。 The organic EL element is one of the display elements that have attracted the most attention in recent years, and has excellent characteristics such as high brightness and fast response speed. In the organic EL element, a light emitting region that emits three different colors of red, green, and blue is disposed on a glass substrate. The light emitting region is an anode electrode film, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode electrode film laminated in this order, and is a color former added in the light emitting layer. Color is red, green, or blue.

ホール輸送層、発光層、電子輸送層等は一般に有機材料で構成されており、このような有機材料の膜の成膜には蒸着装置が広く用いられる。
図６の符号２０３は、従来技術の蒸着装置であり、真空槽２１１の内部に蒸着容器２１２が配置されている。蒸着容器２１２は、容器本体２２１を有しており、該容器本体２２１の上部は、一乃至複数個の放出口２２４が形成された蓋部２２２で塞がれている。 A hole transport layer, a light emitting layer, an electron transport layer, and the like are generally made of an organic material, and a vapor deposition apparatus is widely used for forming a film of such an organic material.
Reference numeral 203 in FIG. 6 is a conventional vapor deposition apparatus, in which a vapor deposition vessel 212 is disposed inside a vacuum chamber 211. The vapor deposition container 212 has a container main body 221, and the upper part of the container main body 221 is closed by a lid portion 222 in which one or more discharge ports 224 are formed.

蒸着容器２１２の内部には、粉体の有機蒸着材料２００が配置されている。蒸着容器２１２の側面と底面にはヒータ２２３が配置されており、真空排気系２１５により真空槽２１１内を真空排気し、ヒータ２２３が発熱すると蒸着容器２１２が昇温し、蒸着容器２１２内の有機蒸着材料２００が加熱される。 A powdery organic vapor deposition material 200 is disposed inside the vapor deposition vessel 212. Heaters 223 are disposed on the side and bottom surfaces of the vapor deposition vessel 212, and the vacuum chamber 211 is evacuated by the vacuum exhaust system 215, and when the heater 223 generates heat, the vapor deposition vessel 212 is heated and the organic matter in the vapor deposition vessel 212 is heated. The vapor deposition material 200 is heated.

有機蒸着材料２００が蒸発温度以上の温度に加熱されると、蒸着容器２１２内に、有機材料蒸気が充満し、放出口２２４から真空槽２１１内に放出される。
放出口２２４の上方にはホルダ２１０が配置されており、ホルダ２１０に基板２０５を保持させておけば、放出口２２４から放出された有機材料蒸気が基板２０５表面に到達し、ホール注入層やホール輸送層や発光層等の有機薄膜が形成される。有機材料蒸気を放出させながら、基板２０５を一枚ずつ放出口２２４上を通過させれば、複数枚の基板２０５に逐次有機薄膜を形成することができる。 When the organic vapor deposition material 200 is heated to a temperature equal to or higher than the evaporation temperature, the vapor of the organic material is filled in the vapor deposition vessel 212 and discharged from the discharge port 224 into the vacuum chamber 211.
A holder 210 is disposed above the discharge port 224. If the holder 210 holds the substrate 205, the organic material vapor discharged from the discharge port 224 reaches the surface of the substrate 205, and a hole injection layer or a hole is formed. Organic thin films such as a transport layer and a light emitting layer are formed. An organic thin film can be sequentially formed on a plurality of substrates 205 by passing the substrates 205 one by one over the discharge port 224 while releasing the organic material vapor.

しかし、複数枚の基板２０５に成膜するには、蒸着容器２１２内に多量の有機蒸着材料２００を配置する必要がある。実際の生産現場では、有機材料を２５０℃〜４５０℃に加熱しながら１２０時間以上連続して成膜処理を行うため、蒸着容器２１２内の有機蒸着材料２００は長時間高温に曝されることになり、蒸着容器２１２中の水分と反応して変質したり、加熱による分解が進行する。その結果、初期状態に比べて有機蒸着材料２００が劣化し、有機薄膜の膜質が悪くなる。
特表２００１−５２３７６８号公報特表２００３−５２５３４９号公報特開２００４−２０４２８９号公報特開２００５−２９８８５号公報特開２００６−１１１９２０号公報 However, in order to form a film on a plurality of substrates 205, it is necessary to arrange a large amount of the organic vapor deposition material 200 in the vapor deposition container 212. In an actual production site, the organic vapor deposition material 200 in the vapor deposition vessel 212 is exposed to a high temperature for a long time because the film formation process is continuously performed for 120 hours or more while heating the organic material to 250 ° C. to 450 ° C. Thus, it reacts with moisture in the vapor deposition vessel 212 and changes its quality, or decomposition by heating proceeds. As a result, the organic vapor deposition material 200 is deteriorated compared to the initial state, and the film quality of the organic thin film is deteriorated.
JP-T-2001-523768 Special table 2003-525349 gazette JP 2004-204289 A JP 2005-29885 A JP 2006-111920 A

本発明は上記課題を解決するためのものであり、その目的は、連続成膜した場合でも、膜質の良い有機薄膜を成膜することである。 The present invention has been made to solve the above-described problems, and an object of the present invention is to form an organic thin film having a good film quality even when continuously formed.

上記課題を解決するために、本発明は蒸気発生装置であって、蒸着材料が配置されるタンクと、前記タンクに配置された前記蒸着材料を所定量落下させる供給装置と、前記供給装置が落下させた前記蒸着材料が載せられる遮蔽板と、前記遮蔽板に載せられた前記蒸着材料を、前記遮蔽板上で移動させる移動装置と、前記遮蔽板に形成され、前記遮蔽板上を移動した前記蒸着材料が落下する落下口と、前記落下口から落下した前記蒸着材料を加熱する蒸発室とを有する蒸気発生装置である。
本発明は蒸気発生装置であって、前記移動装置は回転軸と、前記回転軸を、当該回転軸と平行な回転軸線を中心に回転させる回転手段と、前記回転軸と一緒に回転する収集部材とを有する蒸気発生装置である。
本発明は蒸気発生装置であって、前記遮蔽板にはリング状の溝が形成され、前記落下口は前記溝の底面に位置する蒸気発生装置である。
本発明は蒸着装置であって、前記蒸気発生装置と、前記蒸発室に接続され、前記蒸発室内で発生した蒸気が供給される放出装置と、前記放出装置から内部空間に前記蒸気が放出される真空槽とを有する蒸着装置である。 In order to solve the above-described problems, the present invention is a steam generator, a tank in which a vapor deposition material is disposed, a supply device that drops a predetermined amount of the vapor deposition material disposed in the tank, and the supply device is dropped. A shield plate on which the deposited material is placed, a moving device for moving the deposition material placed on the shield plate on the shield plate, and the shield plate formed on the shield plate and moved on the shield plate It is a steam generator having a dropping port where the vapor deposition material falls and an evaporation chamber for heating the vapor deposition material dropped from the dropping port.
The present invention is a steam generator, wherein the moving device is a rotating shaft, rotating means for rotating the rotating shaft around a rotating axis parallel to the rotating shaft, and a collecting member rotating together with the rotating shaft. A steam generator.
The present invention is a steam generator, wherein the shielding plate is formed with a ring-shaped groove, and the drop port is located on a bottom surface of the groove.
The present invention is a vapor deposition device, the vapor generating device, a discharge device connected to the evaporation chamber and supplied with the vapor generated in the evaporation chamber, and the vapor is discharged from the discharge device into the internal space. A vapor deposition apparatus having a vacuum chamber.

蒸着材料が供給装置内で蒸発も溶融もしないから蒸着材料が劣化せず、しかも、供給装置から決められた量の蒸着材料を正確に蒸発室に配置することができる。 Since the vapor deposition material does not evaporate or melt in the supply device, the vapor deposition material does not deteriorate, and an amount of the vapor deposition material determined by the supply device can be accurately placed in the evaporation chamber.

図１の符号１は有機ＥＬ素子の製造に用いられる製造装置の一例を示している。製造装置１は搬送室２と、１又は複数の蒸着装置１０ａ〜１０ｃと、スパッタ室７と、搬出入室３ａ、３ｂと、処理室６、８とを有しており、各蒸着装置１０ａ〜１０ｃと、スパッタ室７と、搬出入室３ａ、３ｂと、処理室６、８はそれぞれ搬送室２に接続されている。 Reference numeral 1 in FIG. 1 shows an example of a manufacturing apparatus used for manufacturing an organic EL element. The manufacturing apparatus 1 includes a transfer chamber 2, one or a plurality of vapor deposition apparatuses 10a to 10c, a sputtering chamber 7, carry-in / out chambers 3a and 3b, and processing chambers 6 and 8, and the respective vapor deposition apparatuses 10a to 10c. The sputtering chamber 7, the loading / unloading chambers 3a and 3b, and the processing chambers 6 and 8 are connected to the transfer chamber 2, respectively.

搬送室２と、各蒸着装置１０ａ〜１０ｃと、スパッタ室７と、搬出入室３ａ、３ｂと、各処理室６、８には、真空排気系９が接続されている。真空排気系９により、搬送室２内部と、蒸着装置１０ａ〜１０ｃの内部と、処理室６、８内部と、スパッタ室７内部と、搬入室３ａ内部と、搬出室３ｂ内部に真空雰囲気が形成される。 A vacuum exhaust system 9 is connected to the transfer chamber 2, the vapor deposition apparatuses 10 a to 10 c, the sputtering chamber 7, the carry-in / out chambers 3 a and 3 b, and the processing chambers 6 and 8. By the vacuum exhaust system 9, a vacuum atmosphere is formed inside the transfer chamber 2, inside the vapor deposition apparatuses 10a to 10c, inside the processing chambers 6 and 8, inside the sputter chamber 7, inside the carry-in chamber 3a, and inside the carry-out chamber 3b. Is done.

搬送室２の内部には搬送ロボット５が配置されており、搬送ロボット５により、基板は真空雰囲気中で搬送され、処理室６、８内部で加熱やクリーニング等の処理がされ、スパッタ室７で基板表面上に透明導電膜（下部電極）が形成され、蒸着装置１０ａ〜１０ｃで、電子注入層、電子輸送層、発光層、ホール輸送層、ホール注入層等の有機薄膜が形成され、スパッタ室７内部で有機薄膜上に上部電極が形成され、有機ＥＬ素子が得られる。得られた有機ＥＬ素子は搬出室３ｂから外部に搬出される。 A transfer robot 5 is disposed inside the transfer chamber 2, and the substrate is transferred in a vacuum atmosphere by the transfer robot 5, and processing such as heating and cleaning is performed inside the processing chambers 6 and 8. A transparent conductive film (lower electrode) is formed on the substrate surface, and organic thin films such as an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer are formed by vapor deposition apparatuses 10a to 10c, and a sputtering chamber 7, an upper electrode is formed on the organic thin film to obtain an organic EL element. The obtained organic EL element is carried out from the carry-out chamber 3b.

尚、この製造装置１に搬入する前に、予め他の製造装置で基板表面に下部電極を形成しておき、必要であれば、該下部電極を所定形状にパターニングしてから、上記製造装置１に搬入し、下部電極上に有機薄膜と上部電極とを、記載した順番に形成して、有機ＥＬ素子を製造してもよい。 In addition, before carrying in this manufacturing apparatus 1, the lower electrode is previously formed in the substrate surface with another manufacturing apparatus, and if necessary, after patterning this lower electrode to a predetermined shape, the said manufacturing apparatus 1 The organic EL element may be manufactured by forming the organic thin film and the upper electrode on the lower electrode in the order described.

次に、有機薄膜の成膜に用いられる蒸着装置について説明する。
図１の蒸着装置１０ａ〜１０ｃのうち、少なくとも１台は本発明の蒸着装置１０ｂで構成されている。図２は本発明の蒸着装置１０ｂの模式的な断面図であり、蒸着装置１０ｂは、真空槽からなる成膜槽１１と、放出装置５０と、１又は２以上の蒸気発生装置２０とを有している。 Next, a vapor deposition apparatus used for forming an organic thin film will be described.
Among the vapor deposition apparatuses 10a to 10c in FIG. 1, at least one of the vapor deposition apparatuses is composed of the vapor deposition apparatus 10b of the present invention. FIG. 2 is a schematic cross-sectional view of a vapor deposition apparatus 10b according to the present invention. The vapor deposition apparatus 10b includes a film formation tank 11 including a vacuum tank, a discharge apparatus 50, and one or more vapor generation apparatuses 20. doing.

放出装置５０は少なくとも一部が成膜槽１１内部に配置され、放出装置５０の成膜槽１１内部に配置された部分には、１又は複数の放出口５５が形成されている。放出口５５を介して、成膜槽１１の内部空間と放出装置５０の内部空間とが接続されている。
各蒸気発生装置２０には配管７８の一端が接続され、配管７８の他端は放出装置５０に接続されている。配管７８の一端と他端の間には切替装置７０が設けられている。 At least a part of the discharge device 50 is arranged inside the film formation tank 11, and one or a plurality of discharge ports 55 are formed in the part of the discharge device 50 arranged inside the film formation tank 11. The internal space of the film formation tank 11 and the internal space of the discharge device 50 are connected via the discharge port 55.
One end of a pipe 78 is connected to each steam generator 20, and the other end of the pipe 78 is connected to the discharge device 50. A switching device 70 is provided between one end and the other end of the pipe 78.

切替装置７０を開状態にすると蒸気発生装置２０が放出装置５０に接続され、蒸気発生装置２０で発生した蒸気は放出装置５０へ移動し、放出口５５から成膜槽１１内部に放出される。逆に、切替装置７０を閉状態にすると蒸気発生装置２０が放出装置５０から遮断され、蒸気発生装置２０で発生した蒸気が、放出装置５０へ移動しなくなる。 When the switching device 70 is opened, the steam generator 20 is connected to the discharge device 50, and the steam generated by the steam generator 20 moves to the discharge device 50 and is released from the discharge port 55 into the film formation tank 11. Conversely, when the switching device 70 is closed, the steam generator 20 is disconnected from the discharge device 50, and the steam generated by the steam generator 20 does not move to the discharge device 50.

蒸気発生装置２０が複数の場合、切替装置７０は個別に開状態と閉状態に切替可能であり、各蒸気発生装置２０を放出装置５０に個別に接続又は遮断することができる。
各蒸気発生装置２０は同じ構成を有しており、同じ部材には同じ符号を用いて説明する。図３は蒸気発生装置２０の断面図である。蒸気発生装置２０は、タンク３１と、供給装置４０と、移動装置６５と、蒸発室２１とを有している。 When there are a plurality of steam generators 20, the switching device 70 can be individually switched between an open state and a closed state, and each steam generator 20 can be individually connected to or disconnected from the discharge device 50.
Each steam generator 20 has the same configuration, and the same members will be described using the same reference numerals. FIG. 3 is a cross-sectional view of the steam generator 20. The steam generator 20 includes a tank 31, a supply device 40, a moving device 65, and an evaporation chamber 21.

タンク３１は蒸発室２１の上方に配置されている。供給装置４０は接続管４２（直管）と供給回転軸３５とを有している。接続管４２は蒸発室２１とタンク３１の間に配置され、上端と下端が、タンク３１の内部空間と蒸発室２１の内部空間にそれぞれ気密に接続されている。従って、タンク３１の内部空間と蒸発室２１の内部空間は気密に接続されている。 The tank 31 is disposed above the evaporation chamber 21. The supply device 40 has a connection pipe 42 (straight pipe) and a supply rotation shaft 35. The connection pipe 42 is disposed between the evaporation chamber 21 and the tank 31, and the upper end and the lower end are airtightly connected to the internal space of the tank 31 and the internal space of the evaporation chamber 21, respectively. Therefore, the internal space of the tank 31 and the internal space of the evaporation chamber 21 are airtightly connected.

供給回転軸３５は周囲に突条３６が螺旋状に形成され、突条３６の少なくとも一部が接続管４２内に位置するよう接続管４２に挿通されている。
供給回転軸３５は回転手段４１に接続されている。回転手段４１は、供給回転軸３５を接続管４２の中心軸線を中心として接続管４２内で回転させる。 The supply rotation shaft 35 has a protrusion 36 formed in a spiral shape around the supply rotation shaft 35, and is inserted into the connection pipe 42 so that at least a part of the protrusion 36 is located in the connection pipe 42.
The supply rotation shaft 35 is connected to the rotation means 41. The rotation means 41 rotates the supply rotation shaft 35 within the connection tube 42 around the central axis of the connection tube 42.

図３はタンク３１に蒸着材料３９を収容した状態を示している。
蒸着材料３９は粉体であって、突条３６表面と接続管４２内壁面との間の隙間は、蒸着材料３９の平均粒径よりも小さくされ、供給回転軸３５が静止した状態では蒸着材料３９はタンク３１内に留まるが、供給回転軸３５が回転すると、タンク３１内の蒸着材料３９は、突条３６間の溝に入り込む。 FIG. 3 shows a state in which the vapor deposition material 39 is accommodated in the tank 31.
The vapor deposition material 39 is a powder, and the gap between the surface of the protrusion 36 and the inner wall surface of the connecting pipe 42 is made smaller than the average particle diameter of the vapor deposition material 39, and the vapor deposition material is in a state where the supply rotation shaft 35 is stationary. 39 remains in the tank 31, but when the supply rotation shaft 35 rotates, the vapor deposition material 39 in the tank 31 enters the groove between the protrusions 36.

突条３６間の溝のうち、接続管４２内に位置する部分が通路となり、溝に入り込んだ蒸着材料３９は該通路を通って接続管４２内を下方へ移動し、通路の下端に到達すると、該通路から零れ落ちる。供給回転軸３５と接続管４２との間の隙間は筒状であって、その隙間の下端で構成されるリング状の開口（供給口４５）は蒸発室２１の内部空間に露出している。 Of the grooves between the ridges 36, a portion located in the connection pipe 42 becomes a passage, and the vapor deposition material 39 that has entered the groove moves downward in the connection pipe 42 through the passage and reaches the lower end of the passage. Spills from the passage. The gap between the supply rotating shaft 35 and the connecting pipe 42 is cylindrical, and a ring-shaped opening (supply port 45) constituted by the lower end of the gap is exposed in the internal space of the evaporation chamber 21.

蒸着材料３９が通る通路の下端は供給口４５の一部分であるから、供給口４５のうち、通路の下端が位置する場所が落下場所になり、その落下場所から零れ落ちた蒸着材料３９が蒸発室２１内部に落下する。蒸発室２１内部の、供給回転軸３５と接続管４２よりも下方位置には、遮蔽板６１が供給口４５と対面するように配置されている。 Since the lower end of the passage through which the vapor deposition material 39 passes is a part of the supply port 45, the place where the lower end of the passage is located in the supply port 45 becomes the fall place, and the vapor deposition material 39 that has fallen from the fall place is the evaporation chamber. 21 falls inside. A shielding plate 61 is disposed in the evaporation chamber 21 at a position below the supply rotation shaft 35 and the connecting pipe 42 so as to face the supply port 45.

蒸着材料３９の落下場所は供給回転軸３５の回転により移動するが、上述したように、落下場所は供給口４５の一部であり、供給口４５内を移動するから、落下した蒸着材料３９は常に遮蔽板６１上に載せられる。
回転手段４１には供給回転軸３５の回転量と、蒸着材料３９の落下量の関係が設定されている。回転手段４１に蒸着材料３９の必要量を入力すると、回転手段４１は必要量が落下するよう供給回転軸３５を回転させ、必要量の蒸着材料３９が遮蔽板６１に載せられる。 The place where the vapor deposition material 39 falls is moved by the rotation of the supply rotating shaft 35. However, as described above, the fall place is a part of the supply port 45 and moves in the supply port 45. It is always placed on the shielding plate 61.
In the rotation means 41, a relationship between the rotation amount of the supply rotation shaft 35 and the amount of fall of the vapor deposition material 39 is set. When the required amount of the vapor deposition material 39 is input to the rotation means 41, the rotation means 41 rotates the supply rotation shaft 35 so that the required amount falls, and the required amount of the vapor deposition material 39 is placed on the shielding plate 61.

遮蔽板６１には貫通孔（落下口６３）が形成されている。移動装置６５は、後述するように、遮蔽板６１上を移動する収集部材６７を有しており、収集部材６７は蒸着材料３９を遮蔽板６１上で移動させ、落下口６３から落下させる。落下口６３は蒸発室２１の内部空間と面している。蒸発室２１内部の落下口６３の下方位置には加熱部材２５が配置されており、落下口６３から落下した蒸着材料３９は加熱部材２５上に配置される。 A through hole (falling port 63) is formed in the shielding plate 61. As will be described later, the moving device 65 has a collecting member 67 that moves on the shielding plate 61, and the collecting member 67 moves the vapor deposition material 39 on the shielding plate 61 and drops it from the dropping port 63. The drop port 63 faces the internal space of the evaporation chamber 21. The heating member 25 is disposed at a position below the drop port 63 inside the evaporation chamber 21, and the vapor deposition material 39 dropped from the drop port 63 is disposed on the heating member 25.

加熱部材２５と蒸発室２１のいずれか一方又は両方には、ヒーター等の加熱手段４８が取り付けられている。電源４７から加熱手段４８に通電すると、加熱手段４８が発熱し、加熱部材２５と蒸発室２１のうち、加熱手段４８が取り付けられた部材が直接加熱され、加熱手段４８が取り付けられてない部材も輻射熱や熱伝導で間接的に加熱され、結局、蒸発室２１と加熱部材２５の両方が加熱手段４８で加熱される。 A heating means 48 such as a heater is attached to one or both of the heating member 25 and the evaporation chamber 21. When the heating means 48 is energized from the power source 47, the heating means 48 generates heat, and among the heating member 25 and the evaporation chamber 21, the member to which the heating means 48 is attached is directly heated, and the member to which the heating means 48 is not attached is also included. It is indirectly heated by radiant heat or heat conduction, and eventually both the evaporation chamber 21 and the heating member 25 are heated by the heating means 48.

上記配管７８の一端は蒸気発生装置２０のうち蒸発室２１に接続され、切替装置７０が開状態では、蒸発室２１の内部空間が放出装置５０に接続される。蒸発室２１に接続された真空排気系で直接蒸発室２１の内部を真空排気するか、切替装置７０を開状態にして、放出装置５０を介して蒸発室２１内部を真空排気して、真空雰囲気を形成する。 One end of the pipe 78 is connected to the evaporation chamber 21 of the steam generator 20, and the internal space of the evaporation chamber 21 is connected to the discharge device 50 when the switching device 70 is open. The inside of the evaporation chamber 21 is directly evacuated by the evacuation system connected to the evaporation chamber 21, or the switching device 70 is opened, and the inside of the evaporation chamber 21 is evacuated through the discharge device 50 to obtain a vacuum atmosphere. Form.

蒸発室２１内部に真空雰囲気を形成した状態で、加熱部材２５を蒸着材料３９の蒸発温度以上に加熱し、蒸着材料３９を加熱部材２５上に配置すると、蒸着材料３９が加熱されて蒸発し、蒸着材料３９の蒸気が蒸発室２１内部に発生する。上述したように、供給回転軸３５と接続管４２の下方、即ち供給装置４０の下方には遮蔽板６１が配置され、遮蔽板６１の下方に加熱部材２５が配置されているから、加熱部材２５からの輻射熱と、加熱部材２５上で発生した蒸気は、遮蔽板６１に入射し、供給装置４０には入射しない。しかも、遮蔽板６１上には、遮蔽板６１と供給装置４０の間の空間を取り囲む壁部材６２が配置されている。 In a state where a vacuum atmosphere is formed in the evaporation chamber 21, the heating member 25 is heated to a temperature equal to or higher than the evaporation temperature of the vapor deposition material 39, and the vapor deposition material 39 is disposed on the heating member 25. The vapor of the vapor deposition material 39 is generated inside the evaporation chamber 21. As described above, the shielding plate 61 is disposed below the supply rotation shaft 35 and the connecting pipe 42, that is, below the supply device 40, and the heating member 25 is disposed below the shielding plate 61. The radiant heat from and the steam generated on the heating member 25 enter the shielding plate 61 and do not enter the supply device 40. Moreover, a wall member 62 that surrounds the space between the shielding plate 61 and the supply device 40 is disposed on the shielding plate 61.

壁部材６２の上端と下端は遮蔽板６１表面と蒸発室２１の天井にそれぞれ密着し、遮蔽板６１と供給装置４０の間の空間は密閉され、側方に回り込んだ蒸気と、側方（例えば蒸発室２１内壁面）からの輻射熱とが供給装置４０には入射しない。
従って、供給装置４０には蒸着材料３９の蒸気が入り込まず、しかも、加熱部材２５や蒸発室２１からの輻射熱で加熱されないから、供給装置４０は蒸着材料３９の蒸発温度未満に維持される。 The upper and lower ends of the wall member 62 are in close contact with the surface of the shielding plate 61 and the ceiling of the evaporation chamber 21, and the space between the shielding plate 61 and the supply device 40 is hermetically sealed. For example, radiant heat from the inner wall surface of the evaporation chamber 21 does not enter the supply device 40.
Accordingly, the vapor of the vapor deposition material 39 does not enter the supply device 40 and is not heated by the radiant heat from the heating member 25 or the evaporation chamber 21, so the supply device 40 is maintained below the evaporation temperature of the vapor deposition material 39.

タンク３１は蒸発室２１の外部に、蒸発室２１及び加熱手段４８から離間して配置されているから、タンク３１も蒸着材料３９の蒸発温度未満に維持され、タンク３１内や供給装置４０内部で、蒸着材料３９が蒸発溶融せず、蒸着材料３９が変質しない。蒸着材料３９が蒸発溶融しないから、供給装置４０内で蒸着材料３９が詰らず、供給装置４０が決められた量の蒸着材料３９を正確に供給口４５から落下させることができる。 Since the tank 31 is disposed outside the evaporation chamber 21 and away from the evaporation chamber 21 and the heating means 48, the tank 31 is also maintained below the evaporation temperature of the vapor deposition material 39, and inside the tank 31 and the supply device 40. The vapor deposition material 39 is not evaporated and melted, and the vapor deposition material 39 is not altered. Since the vapor deposition material 39 does not evaporate and melt, the vapor deposition material 39 is not clogged in the supply device 40, and the supply device 40 can accurately drop a predetermined amount of the vapor deposition material 39 from the supply port 45.

次に、この蒸着装置１０ｂを用いて、電子注入層、電子輸送層、発光層、ホール輸送層、ホール注入層等の有機薄膜を成膜する工程について説明する。
成膜すべき有機薄膜の膜厚は予め決められている。決められた膜厚の成膜に必要な蒸着材料３９の必要量を求め、回転手段４１に、求めた必要量と、回転量と落下量との関係を設定しておく。 Next, a process of forming an organic thin film such as an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer using the vapor deposition apparatus 10b will be described.
The thickness of the organic thin film to be formed is determined in advance. The required amount of the vapor deposition material 39 necessary for film formation with the determined film thickness is obtained, and the relationship between the obtained required amount and the rotation amount and the fall amount is set in the rotating means 41.

少なくとも成膜槽１１には真空排気系９が接続されている。成膜槽１１の内部を真空排気し、成膜槽１１内部と、蒸発室２１内部と、蒸発室２１から成膜槽１１までの蒸気の移動経路（放出装置５０、切替装置７０、配管７８）の内部空間に、所定圧力（例えば１０^-5Ｐａ）の真空雰囲気を形成する。 A vacuum exhaust system 9 is connected to at least the film formation tank 11. The inside of the film formation tank 11 is evacuated, and the vapor transfer path (discharge device 50, switching device 70, piping 78) from the inside of the film formation tank 11, the inside of the evaporation chamber 21, and the evaporation chamber 21 to the film formation tank 11 is provided. A vacuum atmosphere at a predetermined pressure (for example, 10 ⁻⁵ Pa) is formed in the internal space of

加熱部材２５と、蒸発室２１と、蒸気の移動経路とを加熱手段４８で加熱し、蒸着材料３９の蒸発温度以上の加熱温度（２５０℃以上４００℃以下）にし、その温度を維持する。蒸発室２１に真空排気系９が直接接続されている場合には、その真空排気系９と蒸発室２１との間のバルブを閉じる。 The heating member 25, the evaporation chamber 21, and the vapor movement path are heated by the heating means 48, so that the heating temperature is equal to or higher than the evaporation temperature of the vapor deposition material 39 (250 ° C. or higher and 400 ° C. or lower). When the evacuation system 9 is directly connected to the evaporation chamber 21, the valve between the evacuation system 9 and the evaporation chamber 21 is closed.

予め、タンク３１には、電子注入材料、電子輸送材料、発光材料、ホール輸送材料、ホール注入材料等の有機材料を蒸着材料３９として収容しておき、回転手段４１により、設定された必要量の蒸着材料３９を供給口４５から遮蔽板６１上に落下させる。落下した蒸着材料３９を移動装置６５により遮蔽板６１上を移動させ、全量を落下口６３から加熱部材２５に落下させ、蒸発室２１を放出装置５０に接続した状態で、蒸着材料３９の蒸気を発生させる。 In advance, an organic material such as an electron injection material, an electron transport material, a light emitting material, a hole transport material, and a hole injection material is accommodated in the tank 31 as a vapor deposition material 39, and a necessary amount set by the rotating means 41 is stored. The vapor deposition material 39 is dropped onto the shielding plate 61 from the supply port 45. The dropped vapor deposition material 39 is moved on the shielding plate 61 by the moving device 65, the whole amount is dropped from the drop port 63 onto the heating member 25, and the vapor of the vapor deposition material 39 is discharged in a state where the evaporation chamber 21 is connected to the discharge device 50. generate.

蒸着材料３９の蒸気は、圧力差により、蒸発室２１から、移動経路を通って放出口５５から成膜槽１１内に放出される。このとき、蒸発室２１と、放出装置５０と、蒸気の移動経路は、蒸着材料３９の蒸発温度以上になっているから、蒸気は途中で析出しない。 The vapor of the vapor deposition material 39 is discharged from the evaporation chamber 21 through the movement path into the film forming tank 11 through the moving path due to the pressure difference. At this time, since the evaporation chamber 21, the discharge device 50, and the movement path of the vapor are equal to or higher than the evaporation temperature of the vapor deposition material 39, the vapor is not deposited on the way.

成膜槽１１の内部には基板ホルダ１５が配置されている。少なくとも放出口５５から蒸気が放出され始める前に、基板８１を成膜槽１１内部に搬入して基板ホルダ１５に保持させ、基板８１表面を放出装置５０の放出口５５と対面させておく。放出口５５から放出された蒸着材料３９の蒸気は、基板８１表面に到達して有機薄膜が成長する。 A substrate holder 15 is disposed inside the film forming tank 11. At least before the vapor starts to be released from the discharge port 55, the substrate 81 is carried into the film formation tank 11 and held by the substrate holder 15, and the surface of the substrate 81 is made to face the discharge port 55 of the discharge device 50. The vapor | steam of the vapor deposition material 39 discharge | released from the discharge port 55 reaches | attains the board | substrate 81 surface, and an organic thin film grows.

上述したように、供給口４５から遮蔽板６１に落下する蒸着材料３９の量は、決められた膜厚の成膜に必要な量である。その蒸着材料３９は、全量が落下口６３から加熱部材２５に落下して蒸発するから、放出口５５から蒸気が放出され始めてから、蒸気が放出されなくなるまで、基板８１を放出口５５と対面させておけば、基板８１表面上に決められた膜厚の有機薄膜が形成される。蒸着材料３９を供給口４５から落下させ始めてから所定時間が経過するか、蒸発室２１内の圧力が所定圧力以下に下がったら、成膜が終了したと判断する。 As described above, the amount of the vapor deposition material 39 that falls from the supply port 45 to the shielding plate 61 is an amount necessary for film formation with a determined film thickness. Since the entire amount of the vapor deposition material 39 falls from the drop port 63 to the heating member 25 and evaporates, the substrate 81 is made to face the discharge port 55 from when the vapor starts to be discharged from the discharge port 55 until the vapor is not released. In this case, an organic thin film having a determined film thickness is formed on the surface of the substrate 81. When a predetermined time elapses after the deposition material 39 starts to drop from the supply port 45 or when the pressure in the evaporation chamber 21 falls below a predetermined pressure, it is determined that the film formation is completed.

成膜が終了した基板８１を基板ホルダ１５から取り外し、新たな基板８１を基板ホルダ１５に取り付け、基板８１の交換を行った後、上述した工程で有機薄膜を成膜する。基板８１の交換と有機薄膜の成膜とを複数回繰り返せば、複数枚の基板８１を連続して成膜処理することができる。 After the film formation is completed, the substrate 81 is removed from the substrate holder 15, a new substrate 81 is attached to the substrate holder 15, the substrate 81 is replaced, and then an organic thin film is formed in the above-described process. If the exchange of the substrate 81 and the film formation of the organic thin film are repeated a plurality of times, a plurality of substrates 81 can be continuously formed.

複数枚の基板８１を連続して成膜処理する場合であっても、必要量の蒸着材料３９だけしか加熱されないから、蒸着材料３９が劣化せず、連続成膜の最後まで有機薄膜の膜質が劣化しない。 Even when a plurality of substrates 81 are continuously formed, only the required amount of vapor deposition material 39 is heated, so the vapor deposition material 39 is not deteriorated and the film quality of the organic thin film is maintained until the end of the continuous film formation. Does not deteriorate.

次に、本発明の蒸気発生装置２０のうち、移動装置と遮蔽板についてより詳細に説明する。図３、４は移動装置６５と遮蔽板６１の組み合わせの一例を、図５（ａ）、（ｂ）は移動装置７５と遮蔽板７１の組み合わせの他の例をそれぞれ示している。 Next, in the steam generator 20 of the present invention, the moving device and the shielding plate will be described in more detail. 3 and 4 show an example of the combination of the moving device 65 and the shielding plate 61, and FIGS. 5A and 5B show other examples of the combination of the moving device 75 and the shielding plate 71, respectively.

移動装置６５、７５は回転軸６６、７６と、回転軸６６、７６に接続された板状の収集部材６７、７７とを有している。
回転軸６６、７６は鉛直方向に立設された状態で、供給回転軸３５に接続されている。回転軸６６、７６は回転手段４１により、供給回転軸３５と同時に、鉛直方向に立設した状態を維持したまま、一の鉛直線（回転軸線Ｃ）を中心に回転する。 The moving devices 65 and 75 have rotating shafts 66 and 76 and plate-like collecting members 67 and 77 connected to the rotating shafts 66 and 76.
The rotary shafts 66 and 76 are connected to the supply rotary shaft 35 in a state where they are erected in the vertical direction. The rotating shafts 66 and 76 are rotated about one vertical line (rotating axis C) by the rotating means 41 while maintaining the state of being vertically erected simultaneously with the supply rotating shaft 35.

収集部材６７、７７は、遮蔽板６１よりも上方であって、かつ、供給装置４０よりも下方に位置し、回転軸６６、７６の回転により、遮蔽板６１、７１上を、収集部材６７、７７が回転軸線Ｃの周りを移動する。
回転軸６６、７６は鉛直方向に立設されているから、回転軸６６、７６と回転軸線Ｃとは平行である。ここでは、回転軸線Ｃと回転軸６６、７６の中心軸線は一致している。
尚、回転軸６６、７６は、供給回転軸３５と異なる回転手段に接続されてもよく、この場合、供給回転軸３５と回転軸６６、７６の回転軸線は別軸であってもよい。 The collection members 67 and 77 are located above the shielding plate 61 and below the supply device 40, and the collection members 67 and 77 are disposed on the shielding plates 61 and 71 by the rotation of the rotation shafts 66 and 76. 77 moves around the rotation axis C.
Since the rotation shafts 66 and 76 are erected in the vertical direction, the rotation shafts 66 and 76 and the rotation axis C are parallel. Here, the rotational axis C and the central axes of the rotational shafts 66 and 76 coincide.
The rotation shafts 66 and 76 may be connected to a rotation means different from the supply rotation shaft 35. In this case, the rotation axes of the supply rotation shaft 35 and the rotation shafts 66 and 76 may be different axes.

第一例の移動装置６５と遮蔽板６１の組み合わせでは、遮蔽板６１の上側の面（表面）が平坦であり、該表面が略水平になっている（図３、図４）。供給口４５から落下した蒸着材料３９は、回転軸６６の側面と壁部材６２の内壁面との間の領域に載せられる。
収集部材６７の下端は平坦であり、その下端は、回転軸６６側面から壁部材６２内壁面に亘って、遮蔽板６１の表面と近接して対面している。 In the combination of the moving device 65 and the shielding plate 61 of the first example, the upper surface (surface) of the shielding plate 61 is flat and the surface is substantially horizontal (FIGS. 3 and 4). The vapor deposition material 39 dropped from the supply port 45 is placed on a region between the side surface of the rotating shaft 66 and the inner wall surface of the wall member 62.
The lower end of the collecting member 67 is flat, and the lower end of the collecting member 67 faces the surface of the shielding plate 61 from the side surface of the rotating shaft 66 to the inner wall surface of the wall member 62.

収集部材６７の下端と遮蔽板６１の表面との間は離間し、収集部材６７が移動可能になっているが、その間隔は可能な限り狭くなっている。収集部材６７の下端が、弾性変形可能な部材や、ブラシ状の部材で構成される場合は、収集部材６７の下端を遮蔽板６１表面に接触させてもよい。 The lower end of the collecting member 67 and the surface of the shielding plate 61 are separated from each other so that the collecting member 67 can move, but the interval is as narrow as possible. When the lower end of the collecting member 67 is formed of an elastically deformable member or a brush-like member, the lower end of the collecting member 67 may be brought into contact with the surface of the shielding plate 61.

供給口４５から落下する蒸着材料３９は、回転軸３５の側面から壁部材６２の内壁面までのリング状の領域に載せられる。即ち、収集部材６７の下端は、回転軸６６側面から、蒸着材料３９が載せられる領域の縁（外周）に亘って、遮蔽板６１表面と近接する。ここでは、遮蔽板６１表面の壁部材６２で囲まれた領域は円形であり、回転軸線Ｃはその円の中心を通る。 The vapor deposition material 39 falling from the supply port 45 is placed on a ring-shaped region from the side surface of the rotating shaft 35 to the inner wall surface of the wall member 62. That is, the lower end of the collecting member 67 is close to the surface of the shielding plate 61 over the edge (outer periphery) of the region on which the vapor deposition material 39 is placed from the side surface of the rotating shaft 66. Here, the area surrounded by the wall member 62 on the surface of the shielding plate 61 is circular, and the rotation axis C passes through the center of the circle.

回転軸６６が回転すると、収集部材６７は、回転軸６６側面から蒸着材料３９が載せられる領域の縁まで亘って、遮蔽板６１表面と微小間隔を空けて対面したまま移動する。 When the rotation shaft 66 rotates, the collecting member 67 moves from the side surface of the rotation shaft 66 to the edge of the region on which the vapor deposition material 39 is placed while facing the surface of the shielding plate 61 with a small space.

収集部材６７下端と遮蔽板６１表面との間の隙間は、蒸着材料３９が通過しない程狭くされており（例えば蒸着材料３９の平均粒径以下）、収集部材６７が通過した領域にあった蒸着材料３９は、収集部材６７にかき集められ、収集部材６７と一緒に、回転軸６６側面と壁部材６２内壁面の間の領域を移動する。 The gap between the lower end of the collecting member 67 and the surface of the shielding plate 61 is so narrow that the vapor deposition material 39 does not pass through (for example, the average particle size of the vapor deposition material 39 or less), and the vapor deposition in the region through which the collection member 67 has passed. The material 39 is collected by the collecting member 67 and moves together with the collecting member 67 in a region between the side surface of the rotation shaft 66 and the inner wall surface of the wall member 62.

回転軸６６が一回転すると、収集部材６７が、蒸着材料３９が載せられる領域全部と近接したことになるから、遮蔽板６１に落下した蒸着材料３９全部が収集部材６７でかき集められる。かき集められた蒸着材料３９は収集部材６７と一緒に移動する。 When the rotation shaft 66 makes one rotation, the collection member 67 comes close to the entire region where the vapor deposition material 39 is placed, and thus the vapor deposition material 39 that has fallen on the shielding plate 61 is collected by the collection member 67. The collected vapor deposition material 39 moves together with the collecting member 67.

遮蔽板６１には落下口６３が１又は２以上が形成されている。各落下口６３は少なくとも回転軸６６の側面から壁部材６２の内壁面、即ち、回転軸６６から、蒸着材料３９が移動する領域の縁に亘って形成されているから、収集部材６７が落下口６３上を通過する際、かき集められた蒸着材料３９が全て落下口６３から落下する。 The shielding plate 61 is formed with one or more dropping openings 63. Since each drop port 63 is formed at least from the side surface of the rotation shaft 66 to the inner wall surface of the wall member 62, that is, from the rotation shaft 66 to the edge of the region in which the vapor deposition material 39 moves, the collection member 67 serves as the drop port. When passing over 63, all of the collected vapor deposition material 39 falls from the dropping port 63.

次に、第二例の移動装置７５と遮蔽板７１の組み合わせについて説明する。
図５（ａ）、（ｂ）に示す遮蔽板７１は、上側の面（表面）のうち、少なくとも蒸着材料３９が載せられる部分に、すり鉢状の溝７４が形成されている。
溝７４は略水平な底面と、該底面の両側に配置された斜面とで構成されている。供給口４５から落下した蒸着材料３９は斜面に載せられると、重力により底面へ移動する。 Next, a combination of the moving device 75 and the shielding plate 71 of the second example will be described.
In the shielding plate 71 shown in FIGS. 5A and 5B, a mortar-shaped groove 74 is formed in at least a portion on the upper surface (surface) on which the vapor deposition material 39 is placed.
The groove 74 includes a substantially horizontal bottom surface and slopes disposed on both sides of the bottom surface. When the vapor deposition material 39 dropped from the supply port 45 is placed on the slope, it moves to the bottom by gravity.

収集部材７７の下端は、溝７４底面の一方の側の斜面の下端から、他方の側の斜面の下端まで亘って、該底面に対面する。その底面と収集部材７７下端との間の隙間は、蒸着材料３９が通過しないほど狭くされているから、収集部材７７が一回転すると、底面へ移動した蒸着材料３９全部が収集部材７７でかき集められる。 The lower end of the collecting member 77 faces the bottom surface from the lower end of the slope on one side of the bottom surface of the groove 74 to the lower end of the slope on the other side. Since the gap between the bottom surface and the lower end of the collecting member 77 is so narrow that the vapor deposition material 39 does not pass through, when the collecting member 77 makes one revolution, the entire vapor deposition material 39 moved to the bottom surface is collected by the collecting member 77. .

落下口７３は溝７４の底面に１又は２以上形成されている。各落下口７３は溝７４底面の一方の側の斜面から他方の側の斜面に渡って形成されている。収集部材７７が落下口７３上を通過する時には、その下端全部が落下口７３と対面するから、かき集められた蒸着材料３９が全て落下口７３から落下する。
収集部材６７、７７は回転軸６６、７６に固定してもよいし、回転軸６６、７６と相対的に移動可能にしてもよい。 One or more drop openings 73 are formed on the bottom surface of the groove 74. Each drop port 73 is formed from the slope on one side of the bottom surface of the groove 74 to the slope on the other side. When the collecting member 77 passes over the drop port 73, the entire lower end faces the drop port 73, so that all of the collected vapor deposition material 39 falls from the drop port 73.
The collecting members 67 and 77 may be fixed to the rotary shafts 66 and 76, or may be movable relative to the rotary shafts 66 and 76.

第二例の組み合わせで、収集部材７７が回転軸７６に固定された場合、溝７４のリング中心を、回転軸線Ｃが通るようにすれば、収集部材７７は溝７４底面と対面したまま移動する。尚、溝７４に底面を設けず、２つの斜面の下端を直接接触させて、底面の無い溝７４を形成してもよい。 In the combination of the second example, when the collection member 77 is fixed to the rotation shaft 76, the collection member 77 moves while facing the bottom surface of the groove 74 if the rotation axis C passes through the ring center of the groove 74. . Note that the groove 74 without the bottom surface may be formed by directly contacting the lower ends of the two slopes without providing the groove 74 with a bottom surface.

この場合、収集部材７７を、２つの斜面の下端まで近接するような形状にし、落下口７３を２つの斜面の下端まで達するよう設ければ、各斜面を滑り落ちた蒸着材料３９を収集部材７７でかき集めることができる。回転軸６６、７６と回転軸線Ｃの向きは鉛直の場合に限定されない。遮蔽板６１、７１の表面（又は溝７４の底面）が水平面から一方向に傾斜している場合には、回転軸６６、７６と、その回転軸線Ｃを、その傾斜した表面（又は底面）と垂直にする。 In this case, if the collecting member 77 is shaped so as to be close to the lower ends of the two slopes, and the dropping port 73 is provided so as to reach the lower ends of the two slopes, the vapor deposition material 39 that has slid down the slopes is collected. Can be collected. The directions of the rotation axes 66 and 76 and the rotation axis C are not limited to the vertical case. When the surface of the shielding plates 61 and 71 (or the bottom surface of the groove 74) is inclined in one direction from the horizontal plane, the rotation shafts 66 and 76 and the rotation axis C are defined as the inclined surface (or bottom surface). Make it vertical.

その回転軸６６、７６に、傾斜した表面（又は底面）と、下端が近接するよう収集部材６７、７７を取り付け、傾斜した表面（又は底面）と下端との間の隙間を、蒸着材料３９が通過しない程狭くする。その状態で回転軸６６、７６を回転させれば、収集部材６７、７７は、下端が遮蔽板６１、７１の表面（又は溝７４底面）と近接したまま移動し、一回転した時に、遮蔽板６１、７１に落下した蒸着材料３９が全部かき集められる。 The collecting members 67 and 77 are attached to the rotating shafts 66 and 76 so that the inclined surface (or bottom surface) and the lower end are close to each other, and the vapor deposition material 39 forms a gap between the inclined surface (or bottom surface) and the lower end. Narrow so that it does not pass. If the rotary shafts 66 and 76 are rotated in this state, the collecting members 67 and 77 move while the lower ends thereof are close to the surfaces of the shielding plates 61 and 71 (or the bottom surfaces of the grooves 74), and when they rotate once, the shielding plates All of the vapor deposition material 39 dropped on 61 and 71 is collected.

要するに、回転軸６６、７６とその回転軸線Ｃを、遮蔽板６１、７１の蒸着材料３９が載せられる表面（又は底面）に対して垂直にすれば、その回転軸６６、７６に取り付けた収集部材６７、７７で、蒸着材料３９をかき集めることができる。遮蔽板６１、７１の表面（又は底面）が水平面から傾斜している場合、落下口６３、７３が少なくとも傾斜の下端まで形成されていれば、収集部材６７、７７でかき集められた蒸着材料３９の全量が落下口６３、７３から落下する。 In short, if the rotation shafts 66 and 76 and the rotation axis C thereof are perpendicular to the surface (or the bottom surface) on which the vapor deposition material 39 of the shielding plates 61 and 71 is placed, the collecting member attached to the rotation shafts 66 and 76. 67 and 77, the vapor deposition material 39 can be collected. When the surfaces (or bottom surfaces) of the shielding plates 61 and 71 are inclined from the horizontal plane, the deposition material 39 collected by the collecting members 67 and 77 is collected if the drop openings 63 and 73 are formed at least to the lower end of the inclination. The whole amount falls from the drop openings 63 and 73.

回転軸６６、７６を回転させる回転手段が、供給回転軸３５を回転させる回転手段４１と同じである場合には、回転軸６６、７６を供給回転軸３５とは別に回転手段４１に接続してもよい。また、回転軸６６、７６を供給回転軸３５に取り付けてもよい。更に、供給回転軸３５を回転軸６６、７６とし、供給回転軸３５に直接収集部材６７、７７を取り付けてもよい。 When the rotating means for rotating the rotating shafts 66 and 76 is the same as the rotating means 41 for rotating the supply rotating shaft 35, the rotating shafts 66 and 76 are connected to the rotating means 41 separately from the supplying rotating shaft 35. Also good. Further, the rotation shafts 66 and 76 may be attached to the supply rotation shaft 35. Furthermore, the supply rotation shaft 35 may be the rotation shafts 66 and 76, and the collecting members 67 and 77 may be directly attached to the supply rotation shaft 35.

回転軸６６、７６を回転させる回転手段が、供給回転軸３５を回転させる回転手段４１と同じである場合には、回転軸６６、７６の回転速度は供給回転軸３５の回転速度と同じになり、単位時間当たりの供給口４５からの落下量と、単位時間当たりの落下口６３、７３からの落下量は略等しくなる。 When the rotation means for rotating the rotation shafts 66 and 76 is the same as the rotation means 41 for rotating the supply rotation shaft 35, the rotation speeds of the rotation shafts 66 and 76 are the same as the rotation speed of the supply rotation shaft 35. The amount of fall from the supply port 45 per unit time is substantially equal to the amount of fall from the drop ports 63 and 73 per unit time.

回転軸６６、７６を回転させる回転手段が、供給回転軸３５を回転させる回転手段４１と異なる場合は、装置が複雑にはなるが、回転軸６６、７６の回転速度を、供給回転軸３５の回転速度から変えることができる。従って、単位時間当たりの落下口６３、７３からの落下量を、単位時間当たりの供給口４５からの落下量を超えない範囲で自由に変えることができ、蒸着材料３９の蒸気の発生速度を自由に変え、成膜速度を容易に調整することができる。 When the rotation means for rotating the rotation shafts 66 and 76 is different from the rotation means 41 for rotating the supply rotation shaft 35, the apparatus becomes complicated, but the rotation speed of the rotation shafts 66 and 76 is changed to that of the supply rotation shaft 35. It can be changed from the rotation speed. Therefore, the amount of drops from the drop ports 63 and 73 per unit time can be freely changed within a range not exceeding the amount of drop from the supply port 45 per unit time, and the vapor generation speed of the vapor deposition material 39 can be freely set. Instead, the film forming speed can be easily adjusted.

回転軸６６、７６の配置場所は特に限定されないが、回転軸６６、７６を供給口４５と対面しない位置（ここでは供給口５４のリング内側）に配置すれば、蒸着材料３９が回転軸６６、７６上に溜まらない。
収集部材６７、７７の上に蒸着材料３９が落下する場合は、蒸着材料３９が留まらずに零れ落ちるよう、収集部材６７、７７の上端を狭くしておけばよい。 The arrangement location of the rotation shafts 66 and 76 is not particularly limited. However, if the rotation shafts 66 and 76 are arranged at positions that do not face the supply port 45 (here, inside the ring of the supply port 54), the vapor deposition material 39 is rotated by the rotation shaft 66, 76. Does not accumulate on 76.
When the vapor deposition material 39 falls on the collection members 67 and 77, the upper ends of the collection members 67 and 77 may be narrowed so that the vapor deposition material 39 does not stay and falls.

収集部材６７、７７は、粉体（粒状体を含む）有機材料を集めるものであれば、形状は板状に限定されない。収集部材６７、７７や回転軸６６、７６の構成材料は特に限定されないが、例えば、金属、合金、セラミック等である。 The shape of the collecting members 67 and 77 is not limited to a plate shape as long as the collecting members 67 and 77 collect powder (including granular materials) organic materials. The constituent materials of the collecting members 67 and 77 and the rotating shafts 66 and 76 are not particularly limited, and are, for example, metals, alloys, ceramics, and the like.

以上は蒸着材料３９を加熱部材２５上で加熱する場合について説明したが、本発明はこれに限定されるものではない。例えば、蒸発室２１底壁を加熱部材とし、蒸発室２１を加熱しながら、蒸発室２１の底壁に落下口６３、７３から蒸着材料３９を落下させて、蒸着材料３９を加熱蒸発させてもよい。 The case where the vapor deposition material 39 is heated on the heating member 25 has been described above, but the present invention is not limited to this. For example, the evaporation chamber 21 may be heated and evaporated by using the bottom wall of the evaporation chamber 21 as a heating member and dropping the evaporation material 39 from the drop ports 63 and 73 onto the bottom wall of the evaporation chamber 21 while heating the evaporation chamber 21. Good.

加熱部材２５の加熱方法は特に限定されない。例えば、加熱部材２５をステンレス等の高抵抗の導電材料で構成し、蒸発室２１の内部に電磁場を形成して、加熱部材２５を誘導加熱することもできる。更に、蒸発室２１にレーザー光が透過可能な窓を設け、該窓を介して、外部のレーザー発生装置から、加熱部材２５表面にレーザー光を照射して、加熱部材２５を加熱してもよい。 The heating method of the heating member 25 is not particularly limited. For example, the heating member 25 can be made of a high-resistance conductive material such as stainless steel, and an electromagnetic field can be formed inside the evaporation chamber 21 to heat the heating member 25 by induction. Furthermore, a window through which laser light can be transmitted is provided in the evaporation chamber 21, and the heating member 25 may be heated by irradiating the surface of the heating member 25 with laser light from the external laser generator. .

加熱部材２５の落下口６３、７３と面する表面（載置面）を水平面から傾けておけば、載置面に落下した蒸着材料３９は、重力により載置面上を移動するから、短時間に蒸着材料３９が蒸発する。加熱部材２５の構成材料は特に限定されないが、金属、合金、無機物等熱伝導率が高いものが望ましい。その中でも、シリコンカーバイト（ＳｉＣ）は熱伝導率と機械的強度の両方に優れているので特に望ましい。 If the surfaces (mounting surfaces) facing the drop openings 63 and 73 of the heating member 25 are tilted from the horizontal plane, the vapor deposition material 39 that has fallen on the mounting surface moves on the mounting surface due to gravity, and therefore for a short time. The vapor deposition material 39 evaporates. The constituent material of the heating member 25 is not particularly limited, but a material having high thermal conductivity such as a metal, an alloy, or an inorganic substance is desirable. Among them, silicon carbide (SiC) is particularly desirable because it is excellent in both thermal conductivity and mechanical strength.

遮蔽板６１、７１及び壁部材６２、７２は特に限定されないが、加熱部材２５や蒸発室２１からの輻射熱が入射する面の赤外線反射率を高くし、輻射熱を吸収させないか、遮蔽板６１、７１と壁部材６２、７２の一部又は全部を断熱材料（例えばＳｉ₃Ｎ₄等のセラミック材料）で構成し、表面が輻射熱を吸収しても、その熱が供給装置４０側の裏面まで伝達しないようにすれば、供給装置４０をより確実に、蒸着材料３９の蒸発温度未満に維持することができる。 The shielding plates 61 and 71 and the wall members 62 and 72 are not particularly limited, but the infrared reflectance of the surface on which the radiant heat from the heating member 25 and the evaporation chamber 21 is incident is increased so as not to absorb the radiant heat or the shielding plates 61 and 71. And part or all of the wall members 62 and 72 are made of a heat insulating material (for example, a ceramic material such as Si ₃ N ₄ ), and even if the surface absorbs radiant heat, the heat is not transferred to the back surface on the supply device 40 side. By doing so, the supply device 40 can be more reliably maintained below the evaporation temperature of the vapor deposition material 39.

遮蔽板６１、７１及び壁部材６２、７２の、蒸発室２１の内部空間に面する面に、別部材を取り付け、遮蔽板６１、７１の表面上で輻射熱を反射させずに、吸収させれば、表面が蒸着材料３９の蒸発温度以上になり、遮蔽板６１、７１に蒸着材料３９の蒸気が析出しない。 If another member is attached to the surfaces of the shielding plates 61 and 71 and the wall members 62 and 72 facing the internal space of the evaporation chamber 21, the radiation heat is not reflected on the surfaces of the shielding plates 61 and 71 but absorbed. The surface becomes equal to or higher than the evaporation temperature of the vapor deposition material 39, and the vapor of the vapor deposition material 39 does not deposit on the shielding plates 61 and 71.

蒸着材料３９の蒸気を発生させる際に、蒸発室２１にパージガスを導入し、蒸気をパージガスで押し流せば、蒸気の移動効率が高くなる。
蒸発室２１にパージガスを導入する場合には、例えば、図３に示すように、蒸発室２１を内部を仕切り部材２４で分け、一方の空間に加熱部材２５を、他方の部材にフィルタ２７を配置する。 When the vapor of the vapor deposition material 39 is generated, if the purge gas is introduced into the evaporation chamber 21 and the vapor is swept away by the purge gas, the vapor transfer efficiency is increased.
When introducing purge gas into the evaporation chamber 21, for example, as shown in FIG. 3, the interior of the evaporation chamber 21 is divided by a partition member 24, a heating member 25 is disposed in one space, and a filter 27 is disposed in the other member. To do.

フィルタ２７を加熱手段４８で加熱しながら、該フィルタ２７が配置された空間に、ガス導入系２８からパージガス（Ａｒ、Ｎｅ、Ｘｅ等）を供給し、フィルタ２７を通過して加熱されたパージガスを、加熱部材２５が配置された空間に導入する。蒸着材料３９の蒸気は加熱されたパージガスで押し流されるから、蒸気が析出しない。 While heating the filter 27 with the heating means 48, purge gas (Ar, Ne, Xe, etc.) is supplied from the gas introduction system 28 to the space where the filter 27 is disposed, and the purge gas heated through the filter 27 is supplied. Then, it is introduced into the space where the heating member 25 is disposed. Since the vapor of the vapor deposition material 39 is swept away by the heated purge gas, the vapor is not deposited.

放出装置５０に複数の蒸気発生装置２０が接続されている場合、蒸気発生装置２０にそれぞれ異なる蒸着材料３９を収容しておけば、基板８１表面上に２種類以上の異なる有機薄膜を形成することができる。
具体的には、一の有機薄膜を成膜後、基板８１を交換せずに、基板ホルダ１５に保持したまま、成膜が終了した蒸発室２１を放出装置５０から遮断し、別の蒸気発生装置２０の蒸発室２１を放出装置５０に接続して、該蒸発室２１で異なる蒸着材料の蒸気を発生させる。 When a plurality of vapor generating devices 20 are connected to the discharge device 50, two or more different organic thin films can be formed on the surface of the substrate 81 if different vapor deposition materials 39 are accommodated in the vapor generating devices 20, respectively. Can do.
Specifically, after depositing one organic thin film, the substrate 81 is not replaced, and the evaporation chamber 21 that has been deposited is shut off from the discharge device 50 while being held by the substrate holder 15, and another vapor is generated. The evaporation chamber 21 of the device 20 is connected to the discharge device 50, and vapors of different vapor deposition materials are generated in the evaporation chamber 21.

例えば、３色以上の異なる色の有機薄膜（着色層）を形成する場合、基板８１と放出装置５０の間にマスクを配置し、１つの色の着色層の成膜が終了し、次の着色層の成膜を開始するまでの間に、マスクと基板８１との相対的な位置関係を変えれば、各色の着色層が基板８１表面上の異なる領域に形成される。 For example, in the case of forming organic thin films (colored layers) of three or more different colors, a mask is disposed between the substrate 81 and the emission device 50, the film formation of one color colored layer is completed, and the next coloring is performed. If the relative positional relationship between the mask and the substrate 81 is changed before the start of film formation, colored layers of the respective colors are formed in different regions on the surface of the substrate 81.

上部電極と下部電極のいずれか一方又は両方をパターニングし、各着色層に個別に電圧印加可能にしておけば、選択した場所の選択した色の着色層に電圧を印加して発光させることで、画像や文字をフルカラー表示することができる。
また、マスクを用いないか、マスクと基板８１との位置関係を変えなければ、各色の着色層が同じ場所に積層され、白色光用の有機ＥＬ素子が得られる。 By patterning either one or both of the upper electrode and the lower electrode, and allowing voltage application to each colored layer individually, by applying voltage to the colored layer of the selected color at the selected location to emit light, Images and characters can be displayed in full color.
Further, if the mask is not used or the positional relationship between the mask and the substrate 81 is not changed, the colored layers of the respective colors are stacked at the same place, and an organic EL element for white light is obtained.

蒸気発生装置２０の設置場所は特に限定されず、蒸気発生装置２０の一部又は全部を、放出装置５０と同じ真空槽１１内部に設置してもよい。蒸発室２１と成膜槽を一体化し、蒸発室２１内に基板８１を配置して成膜を行ってもよい。
本発明の蒸気発生装置２０及び蒸着装置１０ｂは、有機ＥＬ素子の有機薄膜の成膜以外の成膜にも用いることができる。 The installation location of the steam generator 20 is not particularly limited, and a part or all of the steam generator 20 may be installed inside the same vacuum chamber 11 as the discharge device 50. The evaporation chamber 21 and the film formation tank may be integrated, and the substrate 81 may be disposed in the evaporation chamber 21 to perform film formation.
The vapor generating apparatus 20 and the vapor deposition apparatus 10b of the present invention can be used for film formation other than the film formation of the organic thin film of the organic EL element.

供給装置４０は、蒸着材料３９を遮蔽板６１、７１上に落下させるものであれば特に限定されない。例えば、供給口４５を遮蔽板６１、７１と対面しない位置に配置し、供給口４５から落下した蒸着材料３９を、水平面から傾斜した板に落下させ、該板の表面を滑り落ちた蒸着材料３９を、遮蔽板６１、７１上に落下させてもよい。 The supply apparatus 40 will not be specifically limited if the vapor deposition material 39 is dropped on the shielding plates 61 and 71. For example, the supply port 45 is disposed at a position not facing the shielding plates 61 and 71, the vapor deposition material 39 dropped from the supply port 45 is dropped onto a plate inclined from the horizontal plane, and the vapor deposition material 39 slipped off the surface of the plate. May be dropped on the shielding plates 61 and 71.

更に、供給回転軸３５の代わりに、供給口から所定量の蒸着材料３９を押し出す押し出し手段を設けてもよい。また、蒸着材料３９の溶融や蒸発をより確実に防止するために、供給装置４０とタンク３１のいずれか一方又は両方に冷却手段を取り付けてもよい。 Further, instead of the supply rotating shaft 35, an extruding means for extruding a predetermined amount of the vapor deposition material 39 from the supply port may be provided. In order to more reliably prevent the vapor deposition material 39 from melting and evaporating, a cooling means may be attached to either or both of the supply device 40 and the tank 31.

有機ＥＬ素子の製造装置の一例を示す模式的な平面図Schematic plan view showing an example of an organic EL element manufacturing apparatus 本発明の蒸着装置の一例を示す模式的な断面図Typical sectional drawing which shows an example of the vapor deposition apparatus of this invention 本発明の蒸気発生装置の一例を説明するための断面図Sectional drawing for demonstrating an example of the steam generator of this invention 本発明に用いる移動装置の一例を説明する平面図The top view explaining an example of the moving apparatus used for this invention （ａ）、（ｂ）：本発明に用いる移動装置の他の例を説明する断面図と平面図(A), (b): sectional view and plan view for explaining another example of the moving device used in the present invention 従来技術の蒸着装置を説明するための断面図Sectional drawing for demonstrating the vapor deposition apparatus of a prior art

Explanation of symbols

１０ｂ……蒸着装置２０……蒸気発生装置２１……蒸発室３１……タンク４０……供給装置４１……回転手段６１、７１……遮蔽板６３、７３……落下口６５、７５……移動装置６６、７６……回転軸６７、７７……収集部材 10b …… Vapor deposition device 20 …… Vapor generator 21 …… Evaporation chamber 31 …… Tank 40 …… Supply device 41 …… Rotating means 61, 71 …… Shield plate 63, 73 …… Drop port 65, 75 …… Movement Device 66, 76 ... Rotary shaft 67, 77 ... Collecting member

Claims

A tank in which the deposition material is placed;
A supply device for dropping a predetermined amount of the vapor deposition material arranged in the tank;
A shielding plate on which the vapor deposition material dropped by the supply device is placed;
A moving device for moving the vapor deposition material placed on the shielding plate on the shielding plate;
A drop opening formed on the shielding plate and from which the vapor deposition material moved on the shielding plate falls,
A vapor generating apparatus comprising: an evaporation chamber for heating the vapor deposition material dropped from the dropping port.

The moving device includes a rotating shaft;
Rotating means for rotating the rotating shaft around a rotating axis parallel to the rotating shaft;
The steam generator according to claim 1, further comprising a collecting member that rotates together with the rotating shaft.

A ring-shaped groove is formed in the shielding plate,
The steam generator according to claim 2, wherein the drop port is located on a bottom surface of the groove.

A steam generator according to any one of claims 1 to 3,
A discharge device connected to the evaporation chamber and supplied with steam generated in the evaporation chamber;
A vapor deposition apparatus comprising: a vacuum chamber in which the vapor is discharged from the discharge apparatus to an internal space.