JP5244342B2 - Chip resistor - Google Patents

Description

  The present invention relates to a chip resistor, and more particularly to a chip resistor excellent in surge resistance characteristics.

Conventionally, as a chip resistor having excellent surge resistance, as shown in FIG. 18, a resistor 20 formed in a meandering manner on an insulating substrate 10 and a pair provided on an upper surface of an end portion of the resistor 20. The upper surface electrodes 30 and 32 are provided, and the pair of upper surface electrodes 30 and 32 are formed to have a width shorter than the length of the side where the upper surface electrodes 30 and 32 are formed, whereby the upper surface electrodes 30 and 32 are formed. Since the space along the side portion can be effectively used as the resistor forming region and the area of the resistor 20 can be increased, the chip resistor is excellent in surge resistance while reducing the size of the chip resistor. (See Patent Document 1).
JP 2006-19694 A

  However, in the chip resistor shown in FIG. 18, the side electrodes 60 and 62 are formed from one end of the insulating substrate 10 to the other end along the side on the upper electrode formation side, As a result of effective use of the space along the side, the resistor 20 is formed close to the side (long side) of the insulating substrate 10, and the resistor is formed close to the side electrode. When a large surge voltage is applied to both ends of the chip resistor, discharge may occur between the resistor and the side electrode. In particular, at a position away from the upper surface electrode along the side where the upper surface electrode is formed, the potential difference from the side electrode is high, and thus there is a risk of discharge. When a discharge occurs between the resistor and the side electrode as described above, the electrical characteristics of the resistor may deteriorate, such as a change in resistance value of the resistor exceeding an allowable range.

  Therefore, a chip resistor in which the pair of upper surface electrodes are formed to have a width shorter than the length of the side portion on which these are formed, and the resistor is formed near the side portion on the electrode portion forming side of the insulating substrate. The purpose of the present invention is to provide a chip resistor capable of preventing the occurrence of discharge between the resistor and the side electrode even when a large surge voltage is applied to both ends of the chip resistor.

The present invention has been created to solve the above problems . First, a chip resistor, which is a substrate having a substantially rectangular parallelepiped shape (may be an insulating substrate, and the same applies to other substrates). A pair of upper surface electrodes respectively formed along the opposing long side portions on the upper surface of the substrate, wherein the width of each upper surface electrode in the direction along the long side portion is smaller than the length of the long side portion. A top surface electrode formed so as not to cross the center position in the direction along the long side portion, a resistor formed in a meandering manner between the pair of top surface electrodes, and the long side of the substrate A side electrode formed on the side of the substrate and connected to the upper surface electrode, an upper component formed on the upper surface side of the substrate and connected to the upper surface electrode, and a side formed on the side surface of the substrate a Department component, and a lower structure portion formed on the lower surface side of the substrate possess, cross Has a side electrode formed only in a partial area in the region where substantially U-shaped portion formed is along the long side portion of the substrate, and a region along the long side portion of the substrate, The closest area where the area other than the connection area with the upper surface electrode in the resistor is closest to the long side portion is provided, and the portion formed in a substantially U-shaped cross section in the side electrode is located in an area other than the closest area. It is formed .

In the chip resistor having the first configuration, the portion of the side electrode formed in a substantially U-shaped cross section is formed in a region other than the closest region . rather large portion closest to the long side portion is not opposed to the side surface electrode, thus, even when a large surge voltage is applied across the chip resistor, the discharge between the side electrodes resistor It is possible to prevent the occurrence of this phenomenon, and the occurrence of discharge between the resistor and the side electrode prevents the electrical characteristics of the resistor from deteriorating, such as the resistance value change exceeding the allowable range. can do.

  Second, in the first configuration, in the side electrode, the length of the portion formed in a substantially U-shaped cross section is 30 to 50% of the length in the direction of the long side portion of the substrate. It is characterized by that. Therefore, an appropriate configuration can be obtained in consideration of prevention of discharge between the side electrode and the resistor and securing of a connection region with the upper surface electrode and a solder fillet region when mounted on the wiring board.

Third, in the first or second configuration, the entire region from one end to the other end of the side electrode in the direction of the long side is formed in a substantially U-shaped cross section. It is characterized by being.

  Fourth, in the first or second configuration, the side electrode is formed from one end to the other end in the direction of the long side of the substrate, and is formed in a substantially U-shaped cross section. A main body part and an extension part in which no upper constituent part is formed.

  In the fourth configuration, since the extending portion is provided, a sufficient fillet can be secured when mounted on the wiring board, and the fixing force with the wiring board can be improved.

  According to a fifth aspect of the present invention, in the fourth configuration, the extending portions are formed on both sides of the main body portion along the long side portion of the substrate. In other words, since the extending portions are provided on both sides of the side electrode, it is possible to prevent the side electrode from being formed in a region where the side electrode is not originally formed even when the formation position of the side electrode is shifted.

  Sixthly, in the fourth or fifth configuration, the extension part has a side part forming part formed on a side part of the substrate, and an upper end of the side part forming part of the extension part is The substrate is formed lower than the upper end of the substrate. Thereby, the discharge with the resistor can be sufficiently prevented.

  Seventhly, in the fourth or fifth configuration, the extension part has a side part forming part formed on the side part of the substrate, and the upper end of the side part forming part of the extension part is The substrate is formed at the same height as the upper end of the substrate.

Eighth , in any one of the first to seventh configurations, a pair of lower surface electrodes is provided on the lower surface of the substrate, and the pair of lower surface electrodes are regions where the electrodes are formed to face each other. And a region where electrodes are not formed opposite to each other. Therefore, the bonding strength with the wiring substrate can be increased by the region where the electrodes are formed facing each other, and further, the thermal expansion difference between the substrate and the wiring substrate is generated by the region where the electrodes are not formed facing each other. However, since the stress of the substrate can be released toward the region, it is possible to prevent the stress from being concentrated on the solder between the chip resistor and the wiring substrate and cracking of the solder.

Ninth , in any one of the first to eighth configurations, the upper surface electrodes are provided diagonally to each other.

According to a tenth aspect , in any one of the first to eighth configurations, the upper surface electrodes are provided to face each other.

The following configuration may also be used. That is, as an eleventh configuration, in any one of the first to tenth configurations, the upper surface electrode has a length in the second direction of the substrate in a second direction which is a direction perpendicular to the long side portion. The length is less than half of the length, and the substrate is formed so as not to straddle the center position in the second direction of the substrate. Therefore, the length of the resistance path of the resistor can be increased, which is suitable for a chip resistor having a high resistance value.

Further, as a twelfth configuration, in any one of the first to eleventh configurations, a maximum width of a portion of the resistor that does not overlap with the upper surface electrode, a right angle direction that is a direction perpendicular to the direction of the long side portion. Is formed longer than the distance between the pair of upper surface electrodes in the perpendicular direction. As a result, since the region along the side where the upper surface electrode is formed is also used as the resistor forming region, the area of the resistor can be increased. It is possible to obtain a chip resistor that is excellent in surge characteristics and can increase power.

Further, as a thirteenth configuration, in any one of the first to twelfth configurations, the upper surface electrode is formed on the upper side of the resistor in the connection portion between the upper surface electrode and the resistor. To do. Thus, since the upper surface electrode is formed on the upper side of the resistor in the connection portion between the upper surface electrode and the resistor, the resistor is covered with the upper surface electrode in the connection portion with the upper surface electrode. Even when the upper surface electrode is exposed from the protective film for connection with the side electrode, the resistor is not exposed, so that plating can be performed satisfactorily.

As a fourteenth configuration, in the thirteenth configuration, the chip resistor has a protective film that covers a portion of the resistor exposed from the upper surface electrode, and the protective film is at least a part of the upper surface electrode. Is formed so as to be exposed from the protective film. By doing so, since the resistor is completely covered with the upper surface electrode and the protective film, the resistor is completely protected, and the plating formed on the surface of the side electrode may be in contact with the resistor. Therefore, plating can be performed satisfactorily. In order to expose at least part of the upper surface electrode from the protective film, it is preferable to provide a notch or an opening at the position where the upper surface electrode is formed.

As a fifteenth configuration, in the fourteenth configuration, a cutout or an opening for exposing the top electrode from the protective film is formed at a position corresponding to the top electrode in the protective film. The side surface electrode is connected to at least the upper surface electrode exposed through the notch or opening. By providing the notch or opening in this manner, the upper surface electrode is exposed and connected to the side electrode, so that the connection state between the side electrode and the upper surface electrode can be improved. it can.

As a sixteenth configuration, in any one of the first to twelfth configurations, the chip resistor includes a protective film that protects the resistor, and a connection portion between the upper surface electrode and the resistor is provided. Is characterized in that the resistor is formed on the upper surface electrode, and a cover electrode is formed on the upper side of the resistor to cover a portion of the resistor exposed from the protective film. Since the cover electrode is provided in this manner, the resistor is not exposed and plating can be performed satisfactorily.

Further, as a seventeenth configuration, in any one of the first to sixteenth configurations, the other upper surface electrode side of the pair of upper surface electrodes has a curved portion that is a curved side portion. A shape portion is formed. Therefore, since the curved portion is formed, the difference in the distance between the upper surface electrodes is reduced, and no corner is formed on the other upper surface electrode side of the upper surface electrode, so that the upper surface electrode has a specific region. Current concentration can be reduced, and electrical characteristics, particularly load characteristics can be improved.

As an eighteenth configuration, in the seventeenth configuration, the upper surface electrode has a curved portion by cutting out a region including a corner portion on the other upper surface electrode side in a square shape into a curved shape. It is characterized by that.

As a nineteenth configuration, in any one of the first to eighteenth configurations, the other upper surface electrode side of the pair of upper surface electrodes has a side inclined toward the other upper surface electrode side. An inclined portion which is a portion is formed.

As a twentieth configuration, in the nineteenth configuration, the upper surface electrode has an inclined portion by obliquely cutting out a region including a corner portion on the other upper surface electrode side in a square shape. It is characterized by.

According to the chip resistor according to the present invention, since the portion of the side electrode formed in a substantially U-shaped cross section is formed in a region other than the closest region , the potential difference between the resistor and the side electrode is large. In addition, the portion closest to the long side is not opposed to the side electrode. Therefore, even when a large surge voltage is applied to both ends of the chip resistor, discharge between the side electrode and the resistor occurs. The electrical characteristics of the resistor can be prevented from deteriorating, for example, by causing a discharge between the resistor and the side electrode to cause the resistance value change of the resistor to exceed an allowable range. be able to.

  In the present invention, the pair of upper surface electrodes are formed to have a width shorter than the length of the side portion on which the electrodes are formed, and the resistor is formed close to the side portion on the electrode portion forming side of the insulating substrate. The purpose of the chip resistor is to provide a chip resistor that can prevent discharge between the resistor and the side electrode even when a large surge voltage is applied to both ends of the chip resistor. And realized.

  That is, the chip resistor A in the embodiment according to the present invention is configured as shown in FIGS. 1 to 5, and includes an insulating substrate (substrate) 10, a resistor (functional element) 20, and upper surface electrodes 30 and 32. A protective film 40, lower surface electrodes 50 and 52, side surface electrodes 60 and 62, and platings 70 and 72.

  1 and FIGS. 7 to 10 are perspective views of the chip resistor, and FIG. 2 is a plan view of the chip resistor. Strictly speaking, these are in a state in which the platings 70 and 72 are removed. FIG. 4 is a plan view of the chip resistor A. Strictly speaking, FIG. 4 shows a state in which the protective film 40, the side electrodes 60 and 62, and the platings 70 and 72 are removed. 5 and FIGS. 11 to 13 are bottom views of the chip resistor. Strictly speaking, it is a state in which the platings 70 and 72 and the side electrodes 60 and 62 are removed.

  In the drawings, the Y1-Y2 direction is a direction perpendicular to the X1-X2 direction, and the Z1-Z2 direction is a direction perpendicular to the X1-X2 direction and the Y1-Y2 direction.

  Here, the insulating substrate 10 is an insulator formed of alumina having a content rate of about 96%. The insulating substrate 10 has a rectangular parallelepiped shape, and has a substantially rectangular shape in plan view. The insulating substrate 10 is used as a base member of the chip resistor A, that is, a base.

  The resistor 20 is provided on the upper surface of the insulating substrate 10 and is formed in a meandering shape. That is, the resistor 20 is formed in a substantially N shape, and has strip portions 20a and 20c, a wide portion 20b, and connection portions 20d and 20e. That is, the belt-like portion 20a is connected to the upper surface electrode 32 and is formed in a belt-like shape in the Y1-Y2 direction (also referred to as “longitudinal direction” or “short direction of the insulating substrate”). Further, the band-shaped portion 20c is connected to the upper surface electrode 30 and is formed in a band shape in the Y1-Y2 direction. Moreover, the wide part 20b is provided in the intermediate | middle position of the strip | belt-shaped part 20a and the strip | belt-shaped part 20c, and is exhibiting the shape which cut off the square corner which diagonally cut off diagonally. In addition, the shape of this wide part 20b is not what cut | disconnected the diagonal corner | angular part diagonally, and is good also as a square shape. In this case, of course, the wide portion 20b needs to have a shape that does not contact the upper surface electrodes 30 and 32. Further, the connecting portion 20d has a strip shape and connects the strip portion 20a and the wide portion 20b, and the connecting portion 20e has a strip shape and connects the strip portion 20c and the wide portion 20b. A trimming groove T is formed in the wide portion 20b.

  The upper surface electrode 30 has a square shape, is formed along one long side of the upper surface of the insulating substrate 10, and is located at a position biased toward one short side of the long side. Is formed. That is, the upper surface electrode 30 is a region along the side portion on the long side on the Y2 side, and is formed near the corner portion on the upper surface of the insulating substrate. More specifically, the distance α1 between the center position of the upper surface electrode 30 in the X1-X2 direction and the end portion on the X1 side of the insulating substrate 10 is the X1-X2 direction (“lateral direction”, “insulating substrate” of the insulating substrate 10. Longer than the longitudinal direction ”or“ long side direction ”). Further, the distance α2 between the center position of the upper surface electrode 30 in the X1-X2 direction and the end portion on the X2 side of the insulating substrate 10 is naturally shorter than half of the length of the insulating substrate 10 in the X1-X2 direction. Further, the upper surface electrode 30 has a width in the direction along the long side that is not more than half the length of the long side of the insulating substrate (may be smaller than half), and the center position of the long side (that is, It can be said that the center position in the long side direction of the insulating substrate 10 in plan view and the center position are formed so as not to cross the above-mentioned “center position in the direction along the side portion of the substrate”. As a result, the distance between the X1 end of the top electrode 30 and the X1 end of the insulating substrate 10 is longer than half the length of the insulating substrate 10 in the X1-X2 direction. Further, although a gap is provided between the X2 side end of the upper surface electrode 30 and the X2 side end of the insulating substrate 10, a configuration in which this gap is not provided may be employed.

  The upper surface electrode 32 has a point-symmetric configuration with the upper surface electrode 30. That is, the upper surface electrode 32 has a rectangular shape, is formed along the other long side of the upper surface of the insulating substrate 10, and is located at a position biased toward the other short side of the long side. Is formed. That is, the upper surface electrode 32 is a region along the side portion on the long side on the Y1 side, and is formed near the corner portion on the upper surface of the insulating substrate. The specific configuration of the upper surface electrode 32 is the same as that of the upper surface electrode 30 except that it is point symmetric (point symmetric via a central point in plan view of the chip resistor A. The same applies to others). Omitted.

  In addition, both the upper surface electrodes 30 and 32 have a width in the Y1-Y2 direction that is at least half or less (may be smaller than half) the length of the insulating substrate 10 in the Y1-Y2 direction. 32 is formed so as not to straddle the center position in the short side direction of the insulating substrate 10 in plan view. The Y1-Y2 direction in this case is the second direction.

  As described above, both the upper surface electrode 30 and the upper surface electrode 32 are formed along the long side of the insulating substrate 10, and the upper surface electrode 30 and the upper surface electrode 32 are diagonal positions of the insulating substrate 10, that is, insulating. It can be said that the substrate 10 is formed at a point-symmetrical position via the center position in plan view. Note that the upper surface electrode 30 and the upper surface electrode 32 are formed on the upper side of the resistor 20 in the connection portion with the resistor 20.

  The protective film 40 is provided on the upper surfaces of the resistor 20 and the upper surface electrodes 30 and 32, and has a shape in which two rectangular cutout portions are provided in a rectangular shape. That is, the protective film 40 has a shape in which the rectangular cutout portions 42 and 44 are formed at positions corresponding to the positions of the upper surface electrodes 30 and 32 in a square shape, and is formed so that the resistor 20 is not exposed. Yes. It can be said that the notches 42 and 44 are formed in a concave shape. That is, the length of the protective film 40 in the X1-X2 direction is slightly shorter than the length of the insulating substrate 10 in the X1-X2 direction, but is longer than the maximum width of the resistor 20 in the X1-X2 direction. In addition, the length of the protective film 40 in the Y1-Y2 direction is slightly shorter than the length of the insulating substrate 10 in the Y1-Y2 direction, but is longer than the maximum width of the resistor 20 in the Y1-Y2 direction. Is also formed long. As shown in FIG. 4, when the protective film 40 and the resistor 20 are compared in plan view, the end portions of the belt-like portions 20a and 20c protrude from the protective film 40. Since it is covered with 30, 32, the resistor 20 is not exposed. As shown in FIGS. 1, 2, and 4, the outer shape of the protective film 40 is slightly smaller than the outer shape of the insulating substrate 10 in plan view. This prevents burrs at the time of division. And the shape of the chip resistor is good. The protective film 40 may be formed up to the edge of the insulating substrate 10.

  Further, the lower surface electrode 50 and the lower surface electrode 52 are formed on the bottom surface of the insulating substrate 10 as shown in FIGS. 3 and 5 and have a strip shape. That is, the lower surface electrode 50 is formed in a strip shape in the X1-X2 direction along the long side on the Y2 side, and is formed from the end portion on the X1 side to the end portion on the X2 side. The bottom electrode 52 is formed in a strip shape in the X1-X2 direction along the long side on the Y1 side, and is formed from the end on the X1 side to the end on the X2 side. Note that the length of the bottom electrodes 50 and 52 in the long side direction may be slightly shorter than the length of the insulating substrate 10 in the long side direction.

  The side electrodes 60 and 62 are substantially U-shaped in cross section so as to cover a part of the upper surface electrode, a part of the lower surface electrode, a part of the protective film 40, and a part of the side surface and the upper surface of the insulating substrate 10. However, it is different from the usual point in that it is formed only in a part in the longitudinal direction. That is, as shown in FIGS. 1 to 4, the side electrode 60 includes a part of the upper surface electrode 30, a part of the lower surface electrode 50, a part of the protective film 40, a part of the side surface of the insulating substrate 10, The upper component 60a, the side component 60b, and the lower component 60c constituting the side electrode 60 are each formed in a strip shape so as to cover a part of the upper surface. ing. In particular, the side electrode 60 is formed only at a part of the side of the insulating substrate 10 in the longitudinal direction, and is biased toward a region on the upper electrode 30 formation side (region on the X2 side) in the longitudinal direction of the insulating substrate 10. Is formed. That is, the side electrode 60 is formed from the end on the top electrode 30 formation side (end on the X2 side) to the middle position in the longitudinal direction, and one end of the side electrode 60 is on the X2 side of the insulating substrate 10. It is the position of the end portion, and the other end portion is on the X2 side including the half position in the longitudinal direction of the insulating substrate 10. In other words, in order to prevent discharge with the resistor 20, the potential difference increases as the distance from the upper surface electrode 30 increases, so the X1 side end of the side electrode 60 and the X2 side end of the insulating substrate 10 The length between them is 50% or less of the length of the insulating substrate 10 in the X1-X2 direction. More specifically, the other end portion of the side electrode 60 is formed on the X2 side from the closest region R to the long side of the insulating substrate 10 in the resistor 20, and the side electrode 60 is formed in the closest region R. Is not formed. That is, in the example of FIGS. 1 to 4, the end portion on the X2 side of the closest approach region R is closer to the X2 side than the half position in the longitudinal direction of the insulating substrate 10, but on the X1 side of the side electrode 60. The end is closer to the X2 side than the end on the X2 side of the closest region R. The length between the end of the side electrode 60 on the X1 side and the end of the insulating substrate 10 on the X2 side (same as the length of the side electrode 60) is the length of the insulating substrate 10 in the X1-X2 direction. Although it is 50% or less, it may be less than 45%. Further, considering the connection area with the upper surface electrode and the solder fillet area when mounted on the wiring board, the length of the side electrode 60 is 30% or more of the length of the insulating substrate 10 in the X1-X2 direction. Is preferred.

  The side electrode 62 is formed point-symmetrically with the side electrode 60, and the side electrode 62 is insulated from a part of the upper electrode 32, a part of the lower electrode 52, and a part of the protective film 40. An upper component 62a, a side component 62b, and a lower component, which are formed in a layer having a substantially U-shaped cross section so as to cover a part of the side surface and part of the upper surface of the substrate 10, 62c is formed in a band shape. That is, the side electrode 62 is formed only in part in the longitudinal direction of the insulating substrate 10, and extends from the end on the upper electrode 32 forming side (end on the X1 side) in the longitudinal direction of the insulating substrate 10 in the longitudinal direction. The side electrode 62 is formed halfway, one end of the side electrode 62 is the position of the end on the X1 side of the insulating substrate 10, and the other end is on the X1 side of the half of the longitudinal direction of the insulating substrate 10 It has become. More specifically, the other end portion of the side electrode 62 is formed on the X1 side with respect to the closest region R to the long side of the insulating substrate 10 in the resistor 20, and the side electrode 62 is formed in the closest region R. Is not formed.

  In the region along the long side portion on the upper surface side of the insulating substrate 10, the region where the side electrodes 60 and 62 are not formed, that is, the region indicated by W in FIG. 2 corresponds to the non-formed region.

  As shown in FIG. 2, the side electrode 60 does not cover the entire cutout portion 42 formed in the protective film 40, and similarly, the side electrode 62 is formed in the cutout portion formed in the protective film 40. All 44 are not covered. Accordingly, the upper surface electrode 30 is not entirely covered by the side electrode 60, and the upper surface electrode 32 is not entirely covered by the side electrode 62.

  In addition, unlike the case shown in FIG. 2, the width of the upper components of the side electrodes 60 and 62 is increased so that the side electrode 60 covers the notch 42 and the side electrode layer 62 covers the notch 44. Thus, the upper surface electrodes 30 and 32 may be covered with the side surface electrode layers 60 and 62.

  Since the cutout portions 42 and 44 are formed in the protective film 40, the upper surface electrode 30 is exposed from the protective film 40 by the cutout portion 42, and the upper surface electrode 32 is exposed from the protective film 40 by the cutout portion 44. The side electrode 60 is securely connected to the upper surface electrode 30, and the side electrode 62 is reliably connected to the upper surface electrode 32. Further, in the connection portion between the resistor 20 and the upper surface electrodes 30 and 32, the upper surface electrode is exposed from the notches 42 and 44 because the resistor 20 is provided below the upper surface electrodes 30 and 32. The connection state with the side electrode can be made good. That is, if the resistor 20 is formed above the upper surface electrodes 30 and 32 in the connection portion between the resistor 20 and the upper surface electrodes 30 and 32, the resistor 20 may be exposed from the notches 42 and 44. If so, the resistor 20 is plated when the plating is formed, and the bonding between the resistor 20 and the platings 70 and 72 is not good, so that the plating may not be formed correctly. In that case there is no such fear.

  The plating 70 is composed of a nickel plating 80 and a tin plating 90, and is provided at an end portion on the Y2 side. The nickel plating 80 is formed so as to cover part of the protective film 40, part of the upper surface electrode 30, side electrode 60, and part of the lower surface electrode 50. That is, it is formed so as to cover the exposed portions of the upper electrode 30, the side electrode 60, and the lower electrode 50. The nickel plating 80 is disposed with a substantially uniform film thickness by electroplating. The nickel plating 80 is made of nickel and is formed to prevent solder erosion of internal electrodes such as the upper surface electrode 30. In addition to nickel, the nickel plating 80 may be copper plating. Further, the tin plating 90 is disposed with a substantially uniform film thickness so as to cover the upper surface of the nickel plating 80. The tin plating 90 is formed to satisfactorily solder the chip resistor A to the wiring board. In addition, this tin plating 90 may use solder other than tin plating.

  Similarly, the plating 72 includes a nickel plating 82 and a tin plating 92, and is provided at the end on the Y1 side. The nickel plating 82 is formed so as to cover a part of the protective film 40, a part of the upper surface electrode 32, a side electrode 62, and a part of the lower surface electrode 52. That is, it is formed so as to cover the exposed portions of the upper electrode 32, the side electrode 62, and the lower electrode 52. Since the structure of the nickel plating 82 other than the above is the same as that of the nickel plating 80, the description thereof is omitted. Further, the tin plating 92 is disposed with a substantially uniform film thickness so as to cover the upper surface of the nickel plating 82. Since the structure of the tin plating 92 other than the above is the same as that of the tin plating 90, description thereof is omitted.

  The manufacturing method of the chip resistor A is almost the same as the manufacturing method of a normal chip fixed resistor. In particular, the upper surface electrode 30 and the upper surface electrode 32 are formed diagonally on the insulating substrate 10. The side electrodes 60 and 62 are different from each other in that they are formed only on a part of the insulating substrate 10 in the longitudinal direction.

  That is, the lower electrode is formed in a strip shape on the lower surface of a large-sized substrate having the size of the plurality of insulating substrates 10. Next, a resistor is formed in a predetermined range on the upper surface of the substrate. That is, the resistor 20 is formed by printing the resistor paste, drying it, and firing it (resistance layer forming step). Subsequently, the upper surface electrode is formed so as to partially overlap the resistor 20. That is, the upper surface electrode paste is printed so as to partially overlap the resistance layer 20, dried, and then baked to form the upper surface electrodes 30 and 32. In addition, it is preferable to form in one printing area | region with the upper surface electrode in an adjacent chip resistor.

  Subsequently, after trimming the resistor 20 and adjusting the resistance value, the protective layer 40 is formed, and the substrate is primarily divided. Thereafter, side electrodes are formed. That is, the side electrode is formed by printing the side electrode paste and drying it, followed by firing (or curing instead of firing). As described above, the side electrodes are formed only on a part of the side of the insulating substrate 10 in the longitudinal direction. However, as a method of forming the side electrodes only on a part thereof, the side electrodes are formed by screen printing. A method, a method of printing a groove portion corresponding to a region where a side electrode is not formed by a grooved roller, a method of selectively forming a side electrode by providing a mask by a sputtering method, and the like are conceivable. Thereafter, secondary division is performed to form individual chip pieces, and then platings 70 and 72 are formed.

  In mounting the chip resistor A, as in the prior art, the wiring board is mounted by being connected to the land on the wiring board by providing a fillet formed of solder on the side of the chip resistor A. Since the side electrode is formed only on a part of the side portion in the longitudinal direction of the insulating substrate 10, the fillet is formed only in the region where the side electrode is formed.

  In the chip resistor A having the above-described configuration, the side electrode is formed only on a part of the side in the longitudinal direction of the insulating substrate 10 and is biased toward the region on the upper electrode 30 forming side in the longitudinal direction of the insulating substrate 10. Therefore, the portion of the resistor that has a large potential difference with the side electrode is not opposed to the side electrode, and thus it is possible to prevent the discharge between the side electrode and the resistor from occurring. . In particular, the closest region R is a region having a large potential difference from the side electrode, but the side electrode is not formed in that region, and the side electrode and the resistor are not close to each other. It is possible to prevent the discharge between bodies. Therefore, it is possible to prevent the electrical characteristics of the resistor from deteriorating due to the occurrence of discharge between the resistor and the side electrode, such that the resistance value change of the resistor exceeds the allowable range.

  Moreover, since the length of the side electrodes 60 and 62 is 30 to 50% of the length in the direction of the long side portion of the insulating substrate, it is possible to prevent discharge between the side electrode and the resistor, In consideration of securing the connection area of the solder and the area of the solder fillet when mounted on the wiring board, an appropriate configuration can be obtained. In other words, the length of the side electrode is better to prevent discharge between the side electrode and the resistor, while the side electrode is longer to secure the connection area with the top electrode and the solder fillet area. However, by setting the length of the side electrodes 60 and 62 to 30 to 50% of the length of the insulating substrate, it is possible to achieve an optimum configuration by balancing the both.

  In addition, since the upper surface electrode is formed diagonally, the space along the side where the upper surface electrode is formed can also be used effectively for the resistor formation region, and the area of the resistor is increased. Therefore, it is possible to obtain a chip resistor that is excellent in surge resistance and capable of increasing power while reducing the size of the chip resistor. That is, since both the upper surface electrode 30 and the upper surface electrode 32 are provided only on a part of the side of the insulating substrate 10 on which each upper surface electrode is formed, as shown in FIG. A region in the −X2 direction, that is, a region shown by hatching can be obtained, and this region can be used as a resistor forming region. That is, since the upper surface electrode is formed small, it can be said that the resistor can be formed larger accordingly. In particular, since the upper surface electrode 30 is provided at a position biased toward the X2 side, the upper surface electrode 30 can have a wide area on the X1 side of the upper surface electrode 30, and the upper surface electrode 32 is disposed on the X1 side. Therefore, in the upper surface electrode 32, a region on the X2 side of the upper surface electrode 32 can be widened. That is, by ensuring a wide formation region of the resistor, the maximum length N (more strictly speaking, in the resistor 20) of the resistor 20 in the Y1-Y2 direction (the direction perpendicular to the direction of the long side). The maximum length of the region not laminated with the upper surface electrodes 30 and 32) can be made larger than the distance M between the upper surface electrode 32 and the upper surface electrode 30 in the Y1-Y2 direction.

  Further, the upper surface electrode 30 and the upper surface electrode 32 are provided diagonally, and are provided at point-symmetrical positions via the center position in the plan view of the insulating substrate 10. Even if the configuration is the same and the rotation is 180 degrees during trimming, the trimming groove can be formed correctly.

  Further, as described above, by providing the notches 42 and 44 in the protective film 40, the connection between the upper surface electrode 30 and the side electrode 60 and the connection between the upper surface electrode 32 and the side electrode 62 can be improved. Since the protective film 40 can be formed large on the insulating substrate 10, the resistor 20 can be formed large accordingly, and the surge resistance can be improved accordingly.

  The configuration of the side electrode is not limited to the above configuration, and may be the following configuration. That is, in the chip resistor A <b> 1 shown in FIG. 7, the side electrodes 160 and 162 are further provided with extending portions as compared with the side electrodes 60 and 62. Since the side electrode 160 and the side electrode 162 are point-symmetric with each other and have the same configuration, the side electrode 162 will be described as an example. The side electrode 162 includes a main body 162a and an extension 162b, and the main body 162a. The configuration is the same as that of the side electrode 62. The extending portion 162b is connected to the end portion of the main body portion 162a, is formed along the long side portion to the end portion position on the X2 side of the insulating substrate 10, and is formed on the lower surface and the side surface of the insulating substrate 10. Yes. The lower component formed on the lower side of the insulating substrate 10 in the extending portion 162b is formed in a band shape with the same width as the lower component formed on the lower side of the insulating substrate 10 in the main body 62, and the insulating substrate 10 is formed with a width shorter than the thickness of the insulating substrate 10 from the lower end of the insulating substrate 10, and the upper end of the extended portion 162 b is below the upper end of the insulating substrate 10. Is provided. Specifically, the upper end of the extension part 162 b is at a substantially intermediate position in the vertical direction of the side surface of the insulating substrate 10. Thus, it can be said that the extending part 162b has a substantially L-shaped cross section. The region of the extended portion 162b corresponds to the non-formed region.

  In the configuration of FIG. 7 described above, since the extending portion 162b is provided, the area for connecting the fillet when mounting on the wiring board can be increased as compared with the example of FIG. The fixing force can be improved. In addition, since the upper end of the extension part 162b is at a position lower than the upper end of the insulating substrate 10 and is sufficiently separated from the resistor 20, it is possible to prevent the extension part 162b and the resistor 20 from being discharged. Can do.

  Since the configuration of the chip resistor A1 other than the side electrodes is the same as that of the chip resistor A, detailed description thereof is omitted.

  Further, the side electrodes may be configured like the side electrodes 260 and 262 in the chip resistor A2 shown in FIG. That is, the side electrodes 260 and 262 have substantially the same configuration as the side electrode shown in FIG. 7, but have a configuration in which the side electrode is not formed above the end of the insulating substrate 10 on the top electrode forming side. That is, since the side electrode 260 and the side electrode 262 are symmetrical with each other and have the same configuration, the side electrode 262 will be described as an example. The side electrode 262 includes a main body part 262a, an extension part 262b, and an extension part 262c. The extending portion is provided not only on the X2 side of the main body portion 262a but also on the X1 side. That is, compared with the structure of FIG. 7, the main-body part 262a is formed shorter than 162a, the extension part 262c is connected with the main-body part 262a, and the extension part 262c is the structure similar to the extension part 262b. The upper portion of the extending portion 262c is provided below the upper end of the insulating substrate 10, and specifically, the upper end of the extending portion 262b is the insulating substrate. It is in a substantially middle position in the vertical direction of the 10 side surfaces. The length of the extending part 262c is formed shorter than the length of the extending part 262b. Also in this case, the length between the end on the X2 side of the main body 262a and the end on the X1 side of the insulating substrate 10 is 50% or less of the length of the insulating substrate 10 in the X1-X2 direction. In addition, the length of the main body 262a itself is 30% to 50% of the length of the insulating substrate 10 in the X1-X2 direction.

  By configuring as described above, a cutout portion is formed from the upper side to the upper component of the side component of the main body 162a of the side electrode 162 shown in FIG. The regions of the extended portion 262b and the extended portion 262c correspond to the non-formed region.

  With the configuration as shown in FIG. 8, it is possible to prevent the side electrode from being formed in a region where the side electrode is not originally formed even when the position of the side electrode is shifted in manufacturing the chip resistor A2. it can. That is, when manufacturing the chip resistor, when the side electrode is formed on the strip-shaped member in which the chip resistor is connected in the X1-X2 direction, the side electrode is configured as the side electrode 162 in FIG. If there is, when the formation position of the side electrode is shifted in the X1-X2 direction, the main body part of the side electrode is formed in the region of the extension part of the adjacent chip resistor, and the extension part A portion extending to the upper side of the insulating substrate 10 may be formed in the region, which may cause a discharge with the resistor. However, by using the configuration as shown in FIG. Even in this case, the above-described fear can be prevented.

  Since the configuration of the chip resistor A2 other than the side electrodes is the same as that of the chip resistor A, detailed description thereof is omitted.

  Further, the side electrodes may be configured as the side electrodes 360 and 362 in the chip resistor A3 shown in FIG. That is, the side electrodes 360 and 362 have substantially the same configuration as that of the side electrode shown in FIG. 8, but both ends in the longitudinal direction of the side electrodes 360 and 362 are not formed to the end portions of the insulating substrate 10. A gap is formed between both ends of the electrodes 360 and 362 in the longitudinal direction and the end of the insulating substrate 10. That is, since the side electrode 360 and the side electrode 362 are point-symmetric with each other and have the same configuration, the side electrode 362 will be described as an example. The side electrode 362 includes a main body portion 362a, an extension portion 362b, and an extension portion 362c. The side electrodes 360 and 362 are spaced from each other in the longitudinal direction and the end of the insulating substrate 10. Also in this case, the length between the X2 side end of the main body 362a and the X1 side end of the insulating substrate 10 is 50% or less of the length of the insulating substrate 10 in the X1-X2 direction. In addition, the length of the main body 362a itself is 30% to 50% of the length of the insulating substrate 10 in the X1-X2 direction. The regions of the extending portion 362b and the extending portion 362c correspond to the non-forming region.

  Since the configuration of the chip resistor A3 other than the side electrodes is the same as that of the chip resistor A, detailed description thereof is omitted. According to the configuration of the chip resistor A3, in addition to the effect of the chip resistor A2 shown in FIG. 8, the side electrodes are not connected when the strip-shaped chip resistor group is divided for each chip resistor. There is an effect that no burr is generated at the end of the side electrode.

  Further, the side electrodes may be configured like the side electrodes 460 and 462 in the chip resistor A4 shown in FIG. That is, the side electrodes 460 and 462 have substantially the same configuration as that of the side electrode shown in FIG. 8, except that the upper end of the side part of the side electrode is formed to the position of the upper end of the insulating substrate. That is, the side electrode 460 and the side electrode 462 are point-symmetric with each other and have the same configuration, so that the side electrode 462 will be described as an example. The side electrode 462 includes a main body portion 462a and an extension portion 462b. 462a is formed in an approximately U-shaped cross section from the upper component, the side component, and the lower component, and the end of the side component and the lower component on the X1 side is the end of the insulating substrate 10. However, the end portion on the X1 side of the upper constituent portion is spaced from the end portion of the insulating substrate 10. The extending portion 462b is connected to the end portion of the main body portion 462a and is formed along the longitudinal side portion to the end portion position on the X2 side of the insulating substrate 10, and the bottom surface and the side surface of the insulating substrate 10 are formed. The upper end of the side part forming portion formed on the side surface is formed up to the upper end position of the insulating substrate 10. Further, the lower component formed on the lower surface is continuously provided with the same width as the lower component of the main body 462a. That is, in the configuration of the side electrode shown in FIG. 10, it can be said that the upper constituent portion of the side electrode is formed only in a part of the region corresponding to the upper surface electrode 32 as compared with the conventional configuration shown in FIG.

  In the configuration of FIG. 10 described above, since the extending portion 462b is provided, the area connected to the fillet can be increased when mounting on the wiring board as compared with the example of FIG. Compared with the ninth example, the area connected to the fillet can be increased, so that the adhesion to the wiring board can be improved. In addition, since the upper end of the extension part 462b is separated from the resistor 20, the risk of discharge between the extension part 462b and the resistor 20 can be prevented.

  In the above description, the lower surface electrode is formed from one end of the insulating substrate 10 to the other end along the longitudinal side of the lower surface of the insulating substrate 10, as shown in FIG. Although described, the present invention is not limited to this, and it may be formed as shown in FIG.

  That is, the lower surface electrode 50 and the lower surface electrode 52 are both formed in a rectangular shape along the long side of the insulating substrate 10 and are formed across the center position in the X1-X2 direction, but are either in the longitudinal direction. It is formed to be biased. That is, since the lower surface electrode 50 and the lower surface electrode 52 are point-symmetric with each other and have the same configuration, the lower surface electrode 50 will be described as an example. The lower surface electrode 50 has a central position in the X1-X2 direction along the long side on the Y2 side. Is formed to be biased toward the X2 side, and an interval is formed at the end portion on the X2 side. That is, the interval γ1 between the lower electrode 50 and the end portion on the X1 side of the insulating substrate 10 is formed larger than the interval γ2 between the lower electrode 50 and the end portion on the X2 side of the insulating substrate 10. The lower surface electrode 52 is formed point-symmetrically with the lower surface electrode 50, and the lower surface electrode 52 is formed so as to be biased toward the X1 side. The lower surface electrodes 50 and 52 are formed without straddling the center position in the Y1-Y2 direction. The lower electrode 50 is connected to the side electrode 60 (160, 260, 360, 460), and the lower electrode 52 is connected to the side electrode 62 (162, 262, 362, 462).

  Since the lower surface electrodes 50 and 52 are formed as described above, as shown in FIG. 12, the pair of lower surface electrodes are opposed to each other in the region M1 where the electrodes are formed and are not formed opposite to each other. The region M2 is included. Therefore, the bonding strength with the wiring substrate can be increased by the region M1, and further, even if the thermal expansion difference between the chip resistor insulating substrate and the wiring substrate is generated by the region M2, the stress of the insulating substrate toward the region M2 is increased. Therefore, stress can be released to the corner area where one of the pair of electrodes is not formed, and the stress is concentrated on the solder between the chip resistor and the wiring board. Thus, cracks in the solder can be prevented. Further, since the lower surface electrodes 50 and 52 are formed with a distance from the longitudinal end portion of the insulating substrate 10, even when the lower surface electrodes are formed so as to be shifted in the longitudinal direction at the time of forming the lower surface electrode, adjacent chip resistors are provided. Can be prevented from being formed by mistake.

  In the example of FIG. 11, the bottom electrode is formed along the long side of the chip resistor. However, it may be formed along the short side as shown in FIG. That is, in FIG. 13, the lower surface electrodes 50 and 52 are formed in a rectangular shape in the Y1-Y2 direction along the short side of the chip resistor, do not straddle the center position in the X1-X2 direction, and Y1 The short side is formed with a gap in the longitudinal direction in a state straddling the central position in the -Y2 direction. That is, since the lower surface electrode 50 and the lower surface electrode 52 are point-symmetric with each other and have the same configuration, the lower surface electrode 50 will be described as an example. The lower surface electrode 50 is formed along the short side on the X2 side, and is in the X1-X2 direction. Is formed so as not to straddle the center position and is biased toward the X2 side, the Y2 side end is located at the end position of the insulating substrate 10, and the Y1 side end is the Y1 side end of the insulating substrate 10. Is formed through a gap, and is formed across the center position in the Y1-Y2 direction. The lower surface electrode 52 is formed point-symmetrically with the lower surface electrode 50, and the lower surface electrode 52 is formed so as to be biased toward the X1 side. The lower electrode 50 is connected to the side electrode 60, and the lower electrode 52 is connected to the side electrode 62.

  In the configuration of FIG. 13, the lower surface electrodes 50 and 52 are formed as described above. Therefore, as in the configuration of FIG. 11, the pair of lower surface electrodes are opposed to the region where the electrodes are formed facing each other. Thus, it is possible to obtain the same effect as in the configuration of FIG. 11, and the lower surface electrodes 50 and 52 are the end portions in the longitudinal direction of the insulating substrate 10. Since they are formed at intervals, it is possible to prevent them from being mistakenly formed on the adjacent chip resistors even when they are formed in the longitudinal direction when forming the lower surface electrode.

  Although the chip resistor A has been described as having two trimming grooves T as shown in FIGS. 1, 2, and 4, the number may be one, or three or more. In addition, one of the groove portions formed by the trimming grooves shown in FIG. 1 or the like may be formed by a printing pattern instead of the trimming grooves, and the other portion may be formed by the printing pattern by trimming the others.

  In the chip resistor A, the protective film 40 has the notches 42 and 44. However, the chip resistor A may not have the notches 42 and 44. That is, the protective film 40 may be rectangular. In this case, since the upper surface electrodes 30 and 32 need to be exposed from the protective film 40, the vertical width of the protective film 40 needs to be shorter than the case shown in FIGS.

  In the example described above, the side electrodes 60 and 62 are described as being in contact with the protective film 40, but the side electrodes 60 and 62 may not be in contact with the protective film 40.

  Further, in the chip resistor described above, the resistor 20 is described as having a shape meandering in the vertical direction, but may be a direction meandering in the horizontal direction as shown in FIG.

  That is, in the chip resistor A11 shown in FIG. 14, the resistor 20 is formed with the band-shaped portions 120a, 120b, and 120c, the connection portion 120d, and the wide portion 120e, and the band-shaped portions 120a, 120b, and 120c are formed. By being formed in the lateral direction, that is, in the X1-X2 direction, the connecting portion 120d is formed between the strip-shaped portion 120a and the strip-shaped portion 120b, and the wide portion 120e is formed between the strip-shaped portion 120b and the strip-shaped portion 120c. The resistor 20 is formed in a meandering shape as a whole. Note that one trimming groove T is formed in the wide portion 120e.

  Since the configuration of the chip resistor A11 other than the resistor 20 is the same as that of the chip resistor A, detailed description thereof is omitted. That is, the configuration of the side electrode is the configuration shown in FIG. 1, but the configuration may be the configuration of the side electrode in the chip resistors A1 to A4, and the bottom electrode is the configuration shown in FIG. 11 or 13 may be used.

  In this chip resistor A11 as well, it is possible to prevent the electrical characteristics of the resistor from deteriorating, such as a change in the resistance value of the resistor exceeding an allowable range due to the occurrence of discharge between the resistor and the side electrode. Can do. In addition, since the upper surface electrode is formed diagonally, the space along the side where the upper surface electrode is formed can also be used effectively for the resistor formation region, and the area of the resistor is increased. Therefore, it is possible to obtain a chip resistor having excellent surge resistance while reducing the size of the chip resistor.

  Moreover, as a shape of a resistor, as shown in FIG. 15, it is good also as a structure which has the meander of a vertical direction and the meander of a horizontal direction.

  That is, the resistor 20 in the chip resistor A12 shown in FIG. 15 includes a strip portion 220a formed in the vertical direction (Y1-Y2 direction), a strip portion 220c formed in the vertical direction, and a horizontal direction (X1-X2). Band-shaped portion 220d formed in the direction), band-shaped portion 220f formed in the horizontal direction, band-shaped portion 220h formed in the horizontal direction, band-shaped portion 220b connecting the band-shaped portion 220a and the band-shaped portion 220c, The resistor 20 is formed in a meandering shape as a whole, including a connecting portion 220g that connects the portion 220f and the belt-like portion 220h. As a result, strip-like groove portions R1 and R3 and an L-shaped groove portion R2 are formed in the resistor 20. In the example shown in FIG. 15, the meandering pattern is formed by printing a resistor paste, and the grooves R1, R2, and R3 are also formed by printing. However, the groove R1, the groove R2, the groove R3, and those grooves A part thereof may be formed by a trimming groove at the time of resistance value adjustment.

  Since the configuration of the chip resistor A12 other than the resistor 20 is the same as that of the chip resistor A, detailed description thereof is omitted. That is, the configuration of the side electrode is the configuration shown in FIG. 1, but the configuration may be the configuration of the side electrode in the chip resistors A1 to A4, and the bottom electrode is the configuration shown in FIG. 11 or 13 may be used.

  Also in this chip resistor A12, it is possible to prevent the electrical characteristics of the resistor from deteriorating due to the occurrence of discharge between the resistor and the side electrode, such that the resistance value change of the resistor exceeds the allowable range. Can do. In addition, since the upper surface electrode is formed diagonally, the space along the side where the upper surface electrode is formed can also be used effectively for the resistor formation region, and the area of the resistor is increased. Therefore, it is possible to obtain a chip resistor having excellent surge resistance while reducing the size of the chip resistor.

  Further, in the description of the resistor in each of the above chip resistors, the resistor has been described as having a meandering shape in plan view. However, the present invention is not limited to this, and as shown in FIG. Good. That is, in the chip resistor A13 shown in FIG. 16, the resistor 20 has a square shape (specifically, a rectangular shape) and is connected to the upper surface electrodes 30 and 32 at the corners on the diagonal line. In this case as well, the resistor 20 is below the upper surface electrodes 30 and 32 in the connection portion between the resistor 20 and the upper surface electrodes 30 and 32. The side electrodes 60 and 62 have the same configuration as the side electrode of the chip resistor A shown in FIG. The configuration of the side electrode may be the same as the configuration of the side electrode in the chip resistors A1 to A4. Further, in FIG. 16, the protective film 40 has a square shape and is shown as a shape in which a notch is not formed. However, like the chip resistor A, a notch may be provided at a diagonal position. . In FIG. 16, the side electrode 60 connected to the upper surface electrode 30 and the side electrode 62 connected to the upper surface electrode 32 are not in contact with the protective film 40. A configuration may be adopted in which the side electrodes 60 and 62 are in contact with the upper surface of the protective film 40 extending from the center in the Y2 direction.

  Further, in each of the above chip resistors, the length of the upper surface electrodes 30 and 32 in the Y1-Y2 direction is described as being less than or equal to half (or smaller than half) the length of the insulating substrate 10 in the Y1-Y2 direction. However, it may be more than half (or longer than half) of the length of the insulating substrate 10 in the Y1-Y2 direction. Even in such a configuration, the region along the long side of the upper surface of the insulating substrate 10 can be used as the resistor forming region, and the area of the resistor can be increased. It is possible to obtain a chip resistor having excellent surge resistance while reducing the size. In addition, since the portion where the resistor is connected to the upper surface electrode can be made long, the entire resistor can be widely used as a substantial resistance path, so the load on the resistor can be reduced, and the resistance value can be reduced. Suitable for low chip resistors.

  Further, in each of the above chip resistors except for the chip resistor A12, the upper surface electrodes provided diagonally have been described as being formed in the upper right direction and the lower left direction in a plan view. You may form in a direction. In the chip resistor A12, the upper surface electrodes provided diagonally have been described as being formed in the upper left direction and the lower right direction in plan view, but may be formed in the upper right direction and the lower left direction. Good.

  14 to 16 are plan views of the chip resistor. Strictly speaking, it can be said that the protective film 40, the side electrodes 60 and 62, and the platings 70 and 72 are removed.

  In the above description, the upper surface electrodes 30 and 32 have a width that is less than or equal to half the length of the long side of the insulating substrate (may be smaller than half) in the direction along the long side. The insulating substrate may have a width that is at least half the length of the long side of the insulating substrate (may exceed half) and straddles the center position of the long side.

  In addition, although the distance between the X1 side end of the upper surface electrode 30 and the X1 side end of the insulating substrate 10 is longer than half the length of the insulating substrate 10 in the X1-X2 direction, The length may be half or less of the length of the substrate 10 in the X1-X2 direction. The distance between the X2 side end of the upper surface electrode 32 and the X2 side end of the insulating substrate 10 is longer than half the length of the insulating substrate 10 in the X1-X2 direction. The length may be half or less of the length of the substrate 10 in the X1-X2 direction.

  In the above description, the two upper surface electrodes are diagonally formed. However, they may not be formed diagonally, and the two upper surface electrodes are provided at positions facing each other. It may be the case.

  That is, in the chip resistor B shown in FIG. 17, the upper surface electrode 30 and the upper surface electrode 32 are provided to face each other, and the upper surface electrode 32 has the same configuration as the upper surface electrode 32 in the chip resistor A. The upper surface electrode 30 is formed so as to face the upper surface electrode 32 and is symmetrical with respect to the upper surface electrode 32. That is, the upper surface electrode 30 is formed symmetrically with respect to the center line in the X1-X2 direction.

  In addition, the resistor 20 has a rectangular shape with a strip-shaped cutout formed in the lateral direction, and is formed below the upper surface electrodes 30 and 32.

  The protective film 40 is provided on the upper surfaces of the resistor 20 and the upper surface electrodes 30 and 32, and has a shape in which two rectangular cutout portions are provided in a rectangular shape. That is, the protective film 40 has a shape in which the rectangular cutout portions 42 and 44 are formed at positions corresponding to the positions of the upper surface electrodes 30 and 32 in a square shape, and is formed so that the resistor 20 is not exposed. Yes. It can be said that the notches 42 and 44 are formed in a concave shape. That is, the length of the protective film 40 in the X1-X2 direction is slightly shorter than the length of the insulating substrate 10 in the X1-X2 direction, but is longer than the maximum width of the resistor 20 in the X1-X2 direction. In addition, the length of the protective film 40 in the Y1-Y2 direction is slightly shorter than the length of the insulating substrate 10 in the Y1-Y2 direction, but is longer than the maximum width of the resistor 20 in the Y1-Y2 direction. Is also formed long. As shown in FIG. 17, when the protective film 40 and the resistor 20 are compared in plan view, the portions of the notches 42 and 44 protrude from the protective film 40. , 32, the resistor 20 is not exposed. In addition, it can be said that the notch part 42 and the notch part 44 are provided in the mutually opposing position, and are provided in the same position in the X1-X2 direction.

  The side electrodes 60 and 62 are formed opposite to each other in a region corresponding to the upper surface electrode, and the upper surface electrode 62 has the same configuration as the upper surface electrode 62 in the chip resistor A. Further, the upper surface electrode 60 is formed symmetrically with respect to the center line in the X1-X2 direction.

  Also in this chip resistor B, it is formed only on a part of the side in the longitudinal direction of the insulating substrate 10 and is formed so as to be biased toward the region on the upper electrode 30 forming side in the longitudinal direction of the insulating substrate 10. The portion of the resistor having a large potential difference from the side electrode is not opposed to the side electrode, and therefore, it is possible to prevent the discharge between the side electrode and the resistor from occurring. Therefore, it is possible to prevent the electrical characteristics of the resistor from deteriorating due to the occurrence of discharge between the resistor and the side electrode, such that the resistance value change of the resistor exceeds the allowable range.

  Moreover, since the length of the side electrodes 60 and 62 is 30 to 50% of the length in the direction of the long side portion of the insulating substrate, it is possible to prevent discharge between the side electrode and the resistor, In consideration of securing the connection area of the solder and the area of the solder fillet when mounted on the wiring board, an appropriate configuration can be obtained.

  In addition, since it is formed so as to be opposed to a biased position in the side portion where the upper surface electrode is formed, the space along the side portion where the upper surface electrode is formed can also be effectively used for the resistor forming region. In addition, since the area of the resistor can be increased, it is possible to obtain a chip resistor that is excellent in surge resistance and capable of increasing power while reducing the size of the chip resistor.

  In the above description, it has been described that the resistor is formed on the lower side of the upper surface electrode at the connection portion of the resistor and the upper surface electrode, but the resistor is formed on the upper side of the upper surface electrode. Also good.

  In the above description, the upper surface electrode has been described as having a rectangular shape, but a part of the rectangular shape may be cut off to be curved or inclined. That is, in the pair of upper surface electrodes, the other upper surface electrode side of one upper surface electrode is curved or inclined. In this case, the curved shape can be said to form the R surface, and the inclined shape can be said to form the C surface.

  That is, in each upper surface electrode of the pair of upper surface electrodes provided in a diagonal shape, a curved portion is formed on the other upper surface electrode side, so that the difference in the distance between the upper surface electrodes is reduced, and the upper surface electrode Since no corner is formed on the other upper surface electrode side, the current concentration in a specific region of the upper surface electrode can be reduced, and the electrical characteristics, in particular, the load characteristics can be further improved. That is, when a pair of upper surface electrodes provided in a diagonal shape are rectangular, each upper surface electrode has a corner portion on the other upper surface electrode side, so that the distance between the upper surface electrodes is greatly different. The current concentrates on the portion where the distance between the upper surface electrodes is short, and the current is concentrated on the corner portion because the corner portion is formed. As a result, the current concentrates on the corner region of the upper surface electrode on the other upper surface electrode side, and the electrical characteristics may deteriorate. However, as described above, in the pair of upper surface electrodes, By making the other upper surface electrode side curved or inclined, such a fear can be prevented.

It is a perspective view which shows the structure of the chip resistor based on the Example of this invention. It is a top view which shows the structure of the chip resistor based on the Example of this invention. It is sectional drawing of the chip resistor based on the Example of this invention, Especially, it is sectional drawing of the PP position in FIG. It is a top view which shows the structure of the chip resistor based on the Example of this invention. It is a bottom view which shows the structure of the chip resistor based on the Example of this invention. It is explanatory drawing for demonstrating the effect | action of the chip resistor based on the Example of this invention. It is a perspective view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a perspective view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a perspective view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a perspective view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a bottom view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a bottom view which shows the structure of the other example of the chip resistor based on the Example of this invention, and is especially a bottom view for demonstrating the structure of FIG. It is a bottom view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a top view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a top view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a top view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a top view which shows the structure of the other example of the chip resistor based on the Example of this invention. It is a perspective view which shows the structure of the conventional chip resistor.

Explanation of symbols

A, A1, A2, A3, A4, A11, A12, A13, B Chip resistor 10 Insulating substrate 20 Resistor 30, 32 Upper surface electrode 40 Protective film 50, 52 Lower surface electrode 60, 62, 160, 162, 260, 262 360, 362, 460, 462 Side electrode 70, 72 Plating 162a, 262a, 362a, 462a Main body 162b, 262b, 262c, 362b, 362c, 462b Extension part

Claims (10)

A chip resistor,
A substrate having a substantially rectangular parallelepiped shape;
A pair of upper surface electrodes respectively formed along the long side portions facing each other on the upper surface of the substrate, the width in the direction along the long side portion of each upper surface electrode is formed smaller than the length of the long side portion, An upper surface electrode formed so as not to cross the center position in the direction along the long side portion;
A resistor formed in a serpentine shape between the pair of upper surface electrodes;
A side electrode formed on a side along the long side of the substrate and connected to the upper surface electrode, an upper component formed on the upper surface of the substrate and connected to the upper electrode, and a side surface of the substrate one in the region in which the side structure portion formed, possess a lower structure portion formed on the lower surface side of the substrate, is formed partially in cross-section substantially U-shaped along the long side portion of the substrate to Side electrodes formed only in the region of the part,
Have
In the region along the long side portion of the substrate, a region other than the region connected to the upper surface electrode in the resistor is provided in the closest proximity region where the longest side portion is closest, and the side electrode is formed in a substantially U-shaped cross section. The chip resistor is formed in an area other than the closest area . 2. The chip resistor according to claim 1, wherein a length of a portion formed in a substantially U-shaped cross section in the side surface electrode is 30 to 50% of a length in a direction of a long side portion of the substrate. . 3. The chip according to claim 1 , wherein all regions from one end portion to the other end portion of the side electrode in the direction of the long side portion are formed in a substantially U-shaped cross section. Resistor. A side electrode is formed from one end in the direction of the long side of the substrate to the other end, a main body formed in a substantially U-shaped cross section, and an extended portion in which no upper component is formed The chip resistor according to claim 1, wherein the chip resistor is provided. The chip resistor according to claim 4, wherein the extending portion is formed on both sides of the main body along the long side portion of the substrate. The extending part has a side part forming part formed on a side part of the substrate, and an upper end of the side part forming part of the extending part is formed lower than an upper end of the substrate. Item 6. The chip resistor according to Item 4 or 5. The extending part has a side part forming part formed on the side part of the substrate, and the upper end of the side part forming part of the extending part is formed at the same height as the upper end of the substrate. The chip resistor according to claim 4 or 5. A pair of lower surface electrodes are provided on the lower surface of the substrate, and the pair of lower surface electrodes have a region where electrodes are formed facing each other and a region where electrodes are not formed facing each other. The chip resistor according to claim 1, 2, 3, 4, 5, 6, or 7 . The chip resistor according to claim 1, 2, 3, 4, 5, 6, 7, or 8, wherein the upper surface electrodes are provided diagonally to each other. The chip resistor according to claim 1, 2, 3, 4, 5, 6, 7, or 8, wherein the upper surface electrodes are provided to face each other.

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