JP5282404B2 - ORGANIC ELECTROLUMINESCENCE ELEMENT, ITS MANUFACTURING METHOD, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to an organic electroluminescence element, a manufacturing method thereof, an electro-optical device, and an electronic apparatus.

  Organic electroluminescence elements are rapidly spreading as self-luminous display elements. Organic electroluminescence elements are capable of emitting beautiful red light, and are expected to be used as in-vehicle red display elements.

  In the case of using an organic electroluminescence element as a red display element, a technique for forming an organic functional layer by discharging a liquid organic functional layer precursor to each pixel using a droplet discharge method and performing drying → annealing is known. ing. By forming the organic functional layer using the droplet discharge method, the organic functional layer precursor can be supplied only to the region where the organic functional layer is to be formed. There is an advantage that the amount of waste can be reduced as compared with a method in which a region where the organic functional layer is unnecessary is removed by etching after applying the precursor.

  In addition, since the organic functional layer precursor is discharged only to the part that needs it, the consumption of the organic functional layer precursor can be reduced, and the amount of the organic functional layer precursor used is small. Can be done. Therefore, the environmental load can be reduced, the etching process can be omitted, and the amount of the expensive organic functional layer precursor used can be reduced, so that the TAT can be shortened and the manufacturing cost can be reduced. Examples of forming an organic electroluminescence element using a droplet discharge method include Patent Document 1 and Patent Document 2.

JP 2005-339949 A JP 2006-13139 A

  When the organic functional layer is formed using the droplet discharge method, the layer thickness distribution tends to be non-uniform compared to the case where the spin coating method or the like is used for forming the organic functional layer. And even in each pixel, the layer thickness distribution tends to be non-uniform. In this case, it is difficult to keep the light emission intensity within each pixel uniform, and there arises a problem that the display image quality deteriorates due to the non-uniformity of the light emission intensity inside the unit pixel.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An organic electroluminescence element according to this application example is provided with a substrate, a first electrode having optical transparency disposed on the substrate, and disposed on the first electrode. An organic functional layer formed at least partially overlapping the first electrode, and on the organic functional layer, and at least partially overlapping the first electrode and the organic functional layer in plan view And an organic electroluminescent element comprising: a second electrode having light transparency; and a light transmissive interlayer insulating layer disposed between the substrate and the first electrode, wherein the organic electroluminescent element In the effective light emitting region, the interlayer insulating layer has a distribution in effective optical path length.

  According to this, the light transmissive interlayer insulating layer having a distribution in the effective optical path length has a distribution in a region overlapping the effective light emitting region. The wavelength of light emitted from the effective light emitting region follows the distribution of the effective optical path length of the interlayer insulating layer, and shifts to the long wavelength side when the effective optical path length is long, and shifts to the short wavelength side when the effective optical path length is short. . Since the visibility changes according to the wavelength shift of light, it is possible to visually modulate the emission intensity distribution by the wavelength shift. Therefore, it is possible to correct the emission intensity distribution by using the change in visibility due to the wavelength shift.

  Application Example 2 In the organic electroluminescence element according to the application example, the interlayer insulating layer has a layer thickness distribution, and in the effective light emitting region, the organic functional layer has a layer thickness of the interlayer insulating layer. The thick region is thin, and the thin layer region has a thick layer thickness.

  According to the application example described above, the effective optical path length is long in the region where the interlayer insulating layer has a thick layer thickness, and the effective optical path length is short in the region where the interlayer insulating layer has a thin layer thickness. Therefore, in the region where the interlayer insulating layer is thick, the emission wavelength shifts to the long wavelength side, and in the region where the interlayer insulating layer is thin, the emission wavelength shifts to the short wavelength side. In the region where the interlayer insulating layer is thick, the effective light emitting region is thin.

  When the emission wavelength is shifted to the longer wavelength side, the visibility is generally lowered. In areas where the thickness of the effective light-emitting region is thin, the effective light-emitting region has a low electrical resistance, resulting in high-intensity lighting.In this region, the interlayer insulating layer is thick, so the emission wavelength shifts to the longer wavelength side and Sensitivity decreases. On the other hand, in the region where the thickness of the effective light emitting region is thick, the effective light emitting region has a high electrical resistance, so that the light is lit at a low intensity. , Visibility is improved. For this reason, it is possible to improve the uniformity of the visual intensity within the effective light emitting region.

  Application Example 3 In the organic electroluminescence element according to the application example, the interlayer insulating layer has a refractive index distribution, and in the effective light emitting region, the organic functional layer has a refractive index of the interlayer insulating layer. The high region is thin, and the low refractive index region has a thick layer thickness.

  According to the application example described above, the effective optical path length is long in the region where the refractive index of the interlayer insulating layer is high, and the effective optical path length is short in the region where the refractive index of the interlayer insulating layer is low. Therefore, the emission wavelength shifts to the long wavelength side in the region where the refractive index of the interlayer insulating layer is high, and the emission wavelength shifts to the short wavelength side in the region where the refractive index of the interlayer insulating layer is low. And the area | region where the thickness of an effective light emission area | region is thin is allocated to the area | region where the refractive index of an interlayer insulation layer is high. For this reason, it is possible to improve the uniformity of the visual intensity within the effective light emitting region.

Application Example 4 The organic electroluminescence element according to the application example described above is characterized in that the organic functional layer emits light having a peak wavelength of 555 nm or more.
According to the application example described above, since the peak wavelength of the light emitted from the organic functional layer is configured to be 555 nm or more, the visibility is lowered when the emission wavelength is shifted to the long wavelength side. In the region where the effective light emitting region is thin, the light emitting layer has a low electrical resistance, so that it emits light with high intensity.However, in this region, the refractive index of the interlayer insulating layer is high, so the emission wavelength shifts to the longer wavelength side. , Visibility is reduced. On the other hand, in the region where the effective light emitting region is thick, it is lit at a low intensity due to the increase in the electric resistance of the effective light emitting region. However, in this region, the refractive index of the interlayer insulating layer is low, so the emission wavelength is shorter And the visibility is improved. For this reason, it is possible to improve the uniformity of the visual intensity within the effective light emitting region.

  Application Example 5 In the organic electroluminescence element according to the application example described above, the interlayer insulating layer is formed of any one of silicon oxide, silicon nitride, silicon oxynitride, or a stacked structure thereof. And

  According to the application example described above, it is possible to provide an organic electroluminescence element having excellent optical performance and high reliability by using a highly light-transmittable and chemically stable material as an interlayer insulating layer. Become.

  Application Example 6 An organic electroluminescence element according to the application example described above, wherein a light reflection layer is provided between the substrate and the interlayer insulating layer.

  According to the application example described above, the light emitted from the light emitting layer can be efficiently emitted in the direction facing the substrate.

  Application Example 7 The organic electroluminescence element according to the application example described above is characterized in that a light reflecting layer is provided on the second electrode.

  According to the application example described above, the light emitted from the light emitting layer can be efficiently emitted in the direction of transmitting through the substrate.

  Application Example 8 In the organic electroluminescence element according to the application example, the organic functional layer is formed using a droplet discharge method.

  According to the application example described above, it is possible to efficiently arrange the material for forming the light-emitting layer, and it is possible to provide an organic electroluminescence element that has a low environmental load and is advantageous in terms of cost.

  Application Example 9 In the organic electroluminescence element according to the application example described above, the organic functional layer is formed using a droplet discharge method and is partitioned by a partition wall.

  According to the application example described above, when the organic functional layer is formed by using the droplet discharge method, it is possible to accurately set the spread range of the organic functional layer, and the area and shape of the organic functional layer are defined by the partition walls. It becomes possible to provide an organic electroluminescence device that can be controlled.

  Application Example 10 The manufacturing method of the organic electroluminescence element according to this application example is as follows: (1) A light-transmitting interlayer insulating layer having a distribution in the effective optical path length is formed in the effective light emitting region. And (2) forming a first electrode having optical transparency in a region on the interlayer insulating film and overlapping at least the effective light emitting region in plan view, and (3) the first electrode. A step of forming an organic functional layer in a region that overlaps at least the effective light emitting region in plan view; and (4) at least overlaps the effective light emitting region in plan view on the organic functional layer. Forming a light transmissive second electrode in the region.

  According to this, a structure is formed in which a light-transmitting interlayer insulating layer having a distribution in the effective optical path length has a distribution in a region overlapping the effective light emitting region. The wavelength of light emitted from the effective light emitting region follows the distribution of the effective optical path length of the interlayer insulating layer, and shifts to the long wavelength side when the effective optical path length is long, and shifts to the short wavelength side when the effective optical path length is short. . Since the visibility changes according to the wavelength shift of light, it is possible to visually modulate the emission intensity distribution by the wavelength shift. Therefore, it is possible to provide a method for manufacturing an organic electroluminescence element that can correct the emission intensity distribution using a change in visibility due to a wavelength shift.

  Application Example 11 In the method of manufacturing an organic electroluminescence element according to the application example, in the step (3), the organic functional layer is formed so as to emit light at a peak wavelength of 555 nm or more. .

  According to the application example described above, it is possible to improve the visibility monotonously by shortening the effective optical path length. Therefore, the thickness of the interlayer insulating layer is increased so as to increase the effective optical path length in the region where the organic functional layer shines brightly. It is possible to visually correct the light intensity distribution by adjusting the height.

  [Application Example 12] A method of manufacturing an organic electroluminescence element according to the application example, wherein a partition wall for partitioning the organic electroluminescence element is formed between the step (2) and the step (3). It has the process.

  According to the application example described above, when the organic functional layer is formed, it is possible to accurately set the spread range of the organic functional layer, and the organic electroluminescence element capable of controlling the area and shape of the organic functional layer with the partition walls It is possible to provide a manufacturing method.

  [Application Example 13] An organic electroluminescence element manufacturing method according to the application example described above, wherein, before the step (1), (A) a flat monitor interlayer insulating layer and the monitor interlayer insulating film are A step of preparing a monitor substrate having a monitor partition having the same shape as the partition, and (B) applying and drying an organic functional layer precursor for forming the organic functional layer in the monitor partition. A step of forming an organic functional layer; (C) a step of measuring a layer thickness distribution of the monitor organic functional layer; and (D) a visual intensity fluctuation caused by the layer thickness distribution of the monitor organic functional layer. Determining a distribution of effective optical path lengths of the interlayer insulating layer.

  According to the application example described above, after examining the layer thickness distribution of the organic functional layer that changes depending on the drying conditions and the coating conditions using the monitor substrate, the interlayer insulation is to reduce the influence of the layer thickness distribution. The effective optical path length of the layer can be controlled. Therefore, the visual intensity due to the layer thickness distribution of the organic functional layer can be more accurately relaxed.

  Application Example 14 In the method of manufacturing an organic electroluminescence element according to the application example described above, when the layer thickness distribution of the monitor organic functional layer in the monitor partition is thick at the center, The effective optical path length in the central part of the interlayer insulating layer is shorter than the effective optical path length in the peripheral part.

  According to the application example described above, the organic functional layer is formed thicker on the center side than on the peripheral side in plan view in the partition wall. Therefore, the electrical resistance of the light emitting layer increases at the center side, and the strength decreases compared to the peripheral side. On the other hand, in the region surrounded by the partition walls, the effective optical path length at the center is short. Therefore, the emission wavelength in the region corresponding to the peripheral side is longer than the emission wavelength in the region corresponding to the center side. Since the wavelength of the light emitted from the light emitting layer is configured to be 555 nm or more, the visibility is lowered when the light emission wavelength is shifted to the long wavelength side. That is, the visibility is low in the high intensity region, and the visibility is high in the low intensity region, so that the uniformity of the visual intensity in the light emitting region can be improved.

  [Application Example 15] A method of manufacturing an organic electroluminescence element according to the application example, wherein an effective optical path length in a central portion of the interlayer insulating layer is made shorter than an effective optical path length in a peripheral portion in the effective light emitting region. As a means, the layer thickness in the central part of the interlayer insulating layer is made thinner than the layer thickness in the peripheral part.

  According to the application example described above, the organic functional layer is formed thicker on the center side than on the peripheral side in plan view in the partition wall. Therefore, the electrical resistance of the light emitting layer increases at the center side, and the strength decreases compared to the peripheral side. On the other hand, in the region surrounded by the partition wall, a recess is formed on the center side, and the effective optical path length is shortened. For this reason, the emission wavelength in the region corresponding to the periphery (peripheral side) of the recess is longer than the emission wavelength in the region corresponding to the recess (center side). Since the wavelength of the light emitted from the light emitting layer is configured to be 555 nm or more, the visibility is lowered when the light emission wavelength is shifted to the long wavelength side. That is, the visibility is low in the high intensity region, and the visibility is high in the low intensity region, so that the uniformity of the visual intensity in the light emitting region can be improved.

  [Application Example 16] A method of manufacturing an organic electroluminescence element according to the application example, wherein an effective optical path length in a central portion of the interlayer insulating layer is made shorter than an effective optical path length in a peripheral portion in the effective light emitting region. As a means, the refractive index in the central part of the interlayer insulating layer is lower than the refractive index in the peripheral part.

  According to the application example described above, the organic functional layer is formed so that the central side is thinner than the peripheral side in plan view in the partition wall. Therefore, the electrical resistance of the light emitting layer increases on the peripheral side, and the strength decreases compared to the central side. On the other hand, in the region surrounded by the partition walls, a low refractive index portion is formed on the center side, and the effective optical path length is shortened. For this reason, the emission wavelength in the region corresponding to the peripheral side of the low refractive index portion is longer than the emission wavelength in the region corresponding to the low refractive index portion (center side). Since the wavelength of the light emitted from the light emitting layer is configured to be 555 nm or more, the visibility is lowered when the light emission wavelength is shifted to the long wavelength side. That is, the visibility is low in the high intensity region, and the visibility is high in the low intensity region, so that the uniformity of the visual intensity in the light emitting region can be improved.

  Application Example 17 In the method of manufacturing an organic electroluminescence element according to the application example described above, when the layer thickness distribution of the monitor organic functional layer in the monitor partition is thin at the center, In the above, the effective optical path length in the central portion of the interlayer insulating layer is made longer than the effective optical path length in the peripheral portion.

  According to the application example described above, the organic functional layer is formed so that the central side is thinner than the peripheral side in plan view in the partition wall. Therefore, the electrical resistance of the light emitting layer decreases at the center side, and the strength increases compared to the peripheral side. On the other hand, in the region surrounded by the partition walls, the refractive index in the central portion is set high, so that the effective optical path length is longer than that in the peripheral portion. Therefore, the emission wavelength in the region corresponding to the center side is longer than the emission wavelength in the region corresponding to the peripheral side. Since the wavelength of the light emitted from the light emitting layer is configured to be 555 nm or more, the visibility is lowered when the light emission wavelength is shifted to the long wavelength side. That is, the visibility is low in the high intensity region, and the visibility is high in the low intensity region, so that the uniformity of the visual intensity in the light emitting region can be improved.

  Application Example 18 In the method of manufacturing an organic electroluminescence element according to the application example described above, in the effective light emitting region, an effective optical path length in a central portion of the interlayer insulating layer is made longer than an effective optical path length in a peripheral portion. As a means, the layer thickness in the central part of the interlayer insulating layer is made thicker than the layer thickness in the peripheral part.

  According to the application example described above, the organic functional layer is formed so that the central side is thinner than the peripheral side in plan view in the partition wall. Therefore, the electrical resistance of the light emitting layer decreases at the center side, and the strength increases compared to the peripheral side. On the other hand, in the region surrounded by the partition wall, a convex portion is formed on the center side, and the effective optical path length is long. Therefore, the emission wavelength in the region corresponding to the center (center side) of the convex portion is longer than the emission wavelength in the region corresponding to the peripheral side of the convex portion. Since the wavelength of the light emitted from the light emitting layer is configured to be 555 nm or more, the visibility is lowered when the light emission wavelength is shifted to the long wavelength side. That is, the visibility is low in the high intensity region, and the visibility is high in the low intensity region, so that the uniformity of the visual intensity in the light emitting region can be improved.

  Application Example 19 In the method of manufacturing an organic electroluminescence element according to the application example described above, an effective optical path length in a central portion of the interlayer insulating layer is set longer than an effective optical path length in a peripheral portion in the effective light emitting region. As a means, the refractive index in the central part of the interlayer insulating layer is higher than the refractive index in the peripheral part.

  According to the application example described above, the organic functional layer is formed thicker on the center side than on the peripheral side in plan view in the partition wall. Therefore, the electrical resistance of the light emitting layer decreases on the peripheral side, and the strength increases compared to the central side. On the other hand, in the region surrounded by the partition walls, a high refractive index portion is formed on the center side, and the effective optical path length is long. Therefore, the emission wavelength in the region corresponding to the center side of the high refractive index portion is longer than the emission wavelength in the region corresponding to the low refractive index portion (peripheral side). Since the wavelength of the light emitted from the light emitting layer is configured to be 555 nm or more, the visibility is lowered when the light emission wavelength is shifted to the long wavelength side. That is, the visibility is low in the high intensity region, and the visibility is high in the low intensity region, so that the uniformity of the visual intensity in the light emitting region can be improved.

  Application Example 20 An electro-optical device according to this application example is an electro-optical device including a plurality of organic electroluminescence elements, and at least a part of the plurality of organic electroluminescence elements emits red light. The organic electroluminescence element that emits red light is the above-described organic electroluminescence element.

  According to this, it is possible to provide an electro-optical device that is excellent in uniformity of visual intensity inside an element that emits red light of an electro-optical device including a plurality of organic electroluminescence elements.

  [Application Example 21] An electronic apparatus according to this application example includes the above-described organic electroluminescence element.

  According to this, it is possible to provide an electronic device that can visually form a light emission pattern in a unit pixel and form an image with higher uniformity.

(Configuration when using organic electroluminescence elements)
Hereinafter, the structure in the case of using the organic electroluminescent element (henceforth an organic EL element) concerning this embodiment is demonstrated with reference to drawings. FIG. 1 is a schematic diagram showing a wiring structure when the organic EL element of the present embodiment is used as a display device. The organic EL element 17 used in the display device 1 is driven by an active matrix system using a thin film transistor (hereinafter referred to as TFT) as a switching element. This method includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction perpendicular to each scanning line 101, and a plurality of power supply lines 103 arranged in parallel with each signal line 102. The pixel 40 is provided near each intersection of the scanning line 101 and the signal line 102 as well as having a wiring configuration.

  A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 including a shift register and a level shifter is connected to the scanning line 101.

  Each of the pixels 40 includes a switching TFT 122 in which a scanning signal is supplied to the gate electrode via the scanning line 101, and a storage capacitor that holds a pixel signal shared from the signal line 102 via the switching TFT 122. 113 is included. Further, a driving TFT 123 in which a pixel signal held by the holding capacitor 113 is supplied to the gate electrode and a driving current from the power supply line 103 when electrically connected to the power supply line 103 via the driving TFT 123 are supplied. An organic EL element 17 sandwiched between a given pixel electrode 23 and a counter electrode 50 facing the pixel electrode 23 is provided.

  Next, a specific aspect of the organic EL element 17 of the present embodiment will be described with reference to FIG. Here, FIG. 2 is a plan view schematically showing the arrangement of the organic EL elements 17.

  As shown in FIG. 2, the pixels 40 are regularly arranged in a matrix in the actual display area 4 on the substrate 20.

  In the present embodiment, the pixel unit 3 (one-dot chain line in the figure) includes a real display area 4 in the center (inside the two-dot chain line in the figure) and a dummy area 5 (one point) arranged around the real display area 4. And a region between a chain line and a two-dot chain line). Further, scanning line driving circuits 80 are arranged on both sides of the actual display region 4 in FIG. The scanning line driving circuit 80 is provided on the lower layer side of the dummy region 5.

  Further, an inspection circuit 90 is disposed above the actual display area 4 in FIG. 2, and the inspection circuit 90 is disposed on the lower layer side of the dummy area 5. The inspection circuit 90 is a circuit for inspecting the operating state of the organic EL element 17 and includes, for example, inspection information output means (not shown) for outputting the inspection result to the outside, and is organic during manufacture or at the time of shipment. It is configured to be able to inspect the quality and defects of the EL element.

(Structure of organic EL element and manufacturing method-1)
Hereinafter, the structure and manufacturing method of the organic EL element according to the present embodiment will be described. FIG. 3A is a plan view of the organic EL element 200, and FIG. 3B is a cross-sectional view taken along the line AA ′ in FIG. On the glass substrate 201, an interlayer insulating layer 202 having a concave shape (region A) in which the central portion of the effective light emitting region 211 is depressed in plan view is disposed. Here, the organic light emitting region is a region partitioned by the first partition wall 205. The region A has a circular shape with a diameter of about 40 μm in plan view. The shape is not limited to a circular shape, and may be, for example, a rectangle, a rectangle, or any other indefinite shape, as long as it is disposed inside the first partition 205 described later. Note that the region A is preferably inside the first partition 205, but a part of the region A may overlap the first partition 205.

  For example, the interlayer insulating layer 202 has a thickness of 100 nm inside the region A, and has a thickness of 400 nm inside the region B. Here, silicon nitride is used as a material constituting the interlayer insulating layer 202.

  On the interlayer insulating layer 202, a first electrode (anode) 204 made of ITO having a light transmittance and a thickness of about 50 nm is disposed. On the 1st electrode 204, the 1st partition 205 which prescribes | regulates the area | region which sends an electric current to the organic functional layer 208 is arrange | positioned. And the partition 206 is arrange | positioned so that the 1st partition 205 may be enclosed by planar view. The partition 206 is made of, for example, a photosensitive acrylic resin.

  A hole injection layer 207 is disposed inside the partition wall 206. For example, PEDT / PSS (poly (ethylenedioxythiophene) / poly (styrene sulfonic acid)) is used for the hole injection layer 207, and the layer thickness is about 50 nm. Then, an organic functional layer 208 having a chemical formula shown in FIG. 13 (manufactured by American Dye Source, ADS106RE) and emitting light at a peak wavelength of 555 nm or more (peak wavelength 576 nm) is disposed so as to cover the hole injection layer 207. Yes. When the manufacturing process described later is used, the organic functional layer 208 is configured such that the central part corresponding to the region A is thick (about 120 nm) and the peripheral part corresponding to the region B is thin (about 100 nm). This structure typically occurs when a manufacturing process described later is used.

  A second electrode (cathode) 209 using calcium having a thickness of about 5 nm is disposed on the organic functional layer 208. A light reflection layer 210 using aluminum and having a layer thickness of 200 nm or more is disposed so as to cover the second electrode 209. Then, a current is supplied to the organic functional layer 208 inside the first partition 205 in plan view, and an effective light emitting region 211 is formed inside the first partition 205.

  In the case of using this device structure, in the region B, the thickness of the organic functional layer 208 is reduced, so that the electric resistance is lowered and the current is concentrated (the arrows in the figure schematically indicate the current density). Therefore, the absolute light intensity in the region corresponding to the region B is higher than that in the region corresponding to the region A. FIG. 4A is a graph showing the distribution of absolute light intensity. In the region corresponding to the region B, the intensity is high, and the light emission intensity inside the effective light emitting region 211 is distributed.

  On the other hand, in the region B, since the thickness of the interlayer insulating layer 202 is as thick as 400 nm, the effective optical path length is increased, and the emission wavelength is shifted to the longer wavelength side. The human visual sensitivity peaks at 555 nm, and the visual sensitivity on the long wavelength side decreases. Therefore, the light emission wavelength in the region where the absolute light intensity is high becomes longer, whereby the absolute light intensity is corrected by the visibility characteristic. FIG. 4B is a graph showing the distribution of relative light intensity normalized by the visibility characteristic. The light emission characteristics in the effective light emitting region 211 are corrected by the wavelength dependence of the visual sensitivity, and high uniformity can be obtained for human vision.

  Here, the bottom emission type organic EL element 200 that allows the glass substrate 201 to pass therethrough has been described, but this can be easily changed to the top emission type. That is, a reflective layer made of aluminum or the like having a thickness of 200 nm or more is formed between the glass substrate 201 and the interlayer insulating layer 202, and Mg / Ag that is resistant to oxidation is used as the second electrode having optical transparency. By using the structure excluding 210, a top emission type structure having the same effect can be obtained. Moreover, it is also possible to obtain a structure that is visible on both sides by not forming the light reflecting layer.

Next, a method for manufacturing the structure shown in FIGS. 3A and 3B will be described. Here, before entering the actual manufacturing process, the monitoring organic functional layer is formed on the monitoring substrate having the flat monitoring interlayer insulating layer in the monitoring partition (step A), and the monitoring is performed. The layer thickness distribution of the organic functional layer is measured (Step B), and the distribution of the effective optical path length of the interlayer insulating layer is determined to alleviate the visual intensity fluctuation caused by the layer thickness distribution of the organic functional layer for monitoring (Step C). ) Step is preferably performed. In this embodiment, as a typical layer thickness distribution, a manufacturing process in the case where the central portion corresponding to the region A is thick (about 120 nm) and the peripheral portion corresponding to the region B is thin (about 100 nm) will be described. . This distribution is a typical layer thickness distribution when a manufacturing process described later is used. Hereinafter, the manufacturing process will be described.
5A to 5C are process cross-sectional views for explaining a process of forming the organic EL element 200. FIG.

  First, as step 1, the glass substrate 201 is cleaned, and a silicon nitride layer to be the interlayer insulating layer 202 is deposited by about 400 nm using a CVD method (chemical vapor deposition method) or the like.

  Next, as step 2, a silicon nitride layer is formed with a photoresist layer 212 having an opening in a region where a recess is to be formed, and dry-etched using sulfur hexafluoride gas or the like. FIG. 5A shows a cross-sectional view after this process is completed. By performing this step, a structure having a distribution in the effective optical path length is formed.

  Next, as step 3, the photoresist layer 212 is removed by using an ashing step or the like, and ITO is laminated using a sputtering method so as to have a thickness of about 50 nm. Then, unnecessary portions are removed by etching to form a first electrode 204 having light transmittance.

  Next, as step 4, a silicon oxide layer is formed to a thickness of about 50 nm, and a region where the effective light emitting region 211 is formed is removed by etching to form a first partition 205.

  Next, as step 5, a photosensitive acrylic resin is applied to a thickness of about 2 μm, and exposed and developed to form the partition 206. FIG. 5B shows a cross-sectional view after this process is completed.

  Next, as step 6, oxygen plasma treatment, plasma treatment with carbon tetrafluoride gas, or the like is performed to impart lyophilicity to the first electrode 204 and the first partition 205, and lyophobicity to the partition 206.

  Next, as step 7, the PEDT / PSS dispersion is discharged into the partition 206 using a droplet discharge method. In this case, since the partition wall 206 is given liquid repellency, the PEDT / PSS dispersion liquid is repelled in the partition wall 206 and flows onto the first partition wall 205 and the first electrode 204, so that the liquid droplet discharge position is slightly changed. The deviation is corrected, and the droplet is placed on the first partition 205 and the first electrode 204 with high reproducibility.

  Next, as Step 8, a drying → annealing step is performed to form the hole injection layer 207 using PEDT / PSS.

  Next, as Step 9, an organic functional layer precursor in which a substance having the chemical formula shown in FIG. 13 is dispersed is discharged into the partition 206 using a droplet discharge method. Even in this case, the slight deviation of the droplet discharge position is corrected as in step 7.

  Next, by performing a drying → annealing step as step 10, the organic functional layer 208 containing a substance having the chemical formula shown in FIG. 13 is formed. A part of the organic functional layer 208 is electrically connected to the first electrode 204 through the hole injection layer 207 to form an effective light emitting region 211. Here, the drying step can be a step of performing reduced-pressure drying performed by reducing the pressure from atmospheric pressure for 5 minutes or more, more preferably 10 minutes or more.

  The degree of vacuum in the reduced-pressure atmosphere may be set so that the time required for drying falls within the above value. As a specific example, for example, a value of about several Pa can be used, but this is an example, and the value is not limited to this value. By using this step, the organic functional layer 208 having a thick layer in the region A and a thin layer in the region B is formed. FIG. 5C shows a cross-sectional view after this process is completed.

  Next, as step 11, calcium is deposited by about 5 nm to form the second electrode (cathode) 209.

  Then, as Step 12, the light reflecting layer 210 is formed by vapor-depositing aluminum with a thickness of 200 nm or more so as to cover the second electrode 209, thereby forming the light reflection layer 210 in FIGS. The organic EL element 200 shown in b) is formed.

  Here, the manufacturing method of the bottom emission type organic EL element 200 that extracts light through the glass substrate 201 has been described. However, this can be easily changed to a top emission type manufacturing process.

  Specifically, before depositing the silicon nitride layer in step 1, aluminum is evaporated to a thickness of 200 nm or more to form the light reflecting layer 210, and in step 11, it is resistant to oxidation instead of the step of depositing calcium. The top emission type organic EL element 200 can be formed by forming the second electrode 209 using Mg / Ag by co-evaporation and omitting the step 12.

  In addition, in the step 1 of forming the top emission type structure, when the step of vapor-depositing aluminum is excluded, it is possible to provide a step of forming a structure that is visible on both sides.

(Structure of organic EL element and manufacturing method-2)
Hereinafter, the manufacturing method and structure of the organic EL element according to the present embodiment will be described. 6A is a plan view of the organic EL element 200, and FIG. 6B is a cross-sectional view taken along the line AA ′ in FIG. The difference from (Organic EL element structure and manufacturing method-1) is that (1) the interlayer insulating layer 202 having a convex shape is arranged inside the effective light emitting region 211 in plan view. The layer thickness is about 400 nm in the thick convex region (region A), and about 100 nm in the thin convex region (region B). (2) The organic functional layer 208 (effective light emitting region 211) has a cross-sectional shape that is thin (about 100 nm) in the central portion corresponding to the region A and thick (about 120 nm) in the peripheral portion corresponding to the region B. . These are two points. Here, the region A has, for example, a circular shape with a diameter of 40 μm in plan view. In addition, about conditions, such as a layout, it applies to (Structure and manufacturing method-1 of an organic EL element).

Here, before entering the actual manufacturing process, a monitor organic functional layer is formed on the monitor substrate having a flat monitor interlayer insulating layer in the partition wall (process A), and the monitor organic function The layer thickness distribution of the layer is measured (step B), and an interlayer insulating layer in which the effective optical path length of the interlayer insulating layer is controlled is formed to alleviate the visual intensity fluctuation caused by the layer thickness distribution of the organic functional layer for monitoring. (Step C) It is preferable to execute the step. Hereinafter, typical conditions for forming the central portion thinly will be described.
As a condition for forming the central portion of the organic functional layer 208 to be thin, for example, after the organic functional layer precursor is discharged into the partition wall 206 using a droplet discharge method, reduced pressure drying is performed by reducing the pressure from the atmospheric pressure. Conditions including a step performed in less than 5 minutes, more preferably 1 minute or less can be used. The degree of vacuum in the reduced-pressure atmosphere may be set so that the time required for drying falls within the above value. As a specific example, for example, a value of about several Pa can be used, but this is an example, and the value is not limited to this value.

  When this device structure is used, the thickness of the organic functional layer 208 is reduced in the region A, so that the electrical resistance is lowered and the current is concentrated (the arrows in the figure schematically indicate the current density). Therefore, the absolute light intensity in the region corresponding to the region A is higher than that in the region corresponding to the region B. FIG. 7A is a graph showing the distribution of absolute light intensity. In the area corresponding to the area A, the intensity is high, and the light emission intensity inside the effective light emission area 211 is distributed.

  On the other hand, in the region A, since the thickness of the interlayer insulating layer 202 is as thick as 400 nm, the effective optical path length is increased, and the emission wavelength is shifted to the longer wavelength side. The human visual sensitivity peaks at 555 nm, and the visual sensitivity on the long wavelength side decreases. Therefore, the light emission wavelength in the region where the absolute light intensity is high becomes longer, whereby the absolute light intensity is corrected by the visibility characteristic. FIG. 7B is a graph showing the relative light intensity normalized by the visibility characteristic. The light emission characteristics in the effective light emitting region 211 are corrected by the wavelength dependence of the visual sensitivity, and high uniformity can be obtained for human vision.

  Here, the bottom emission type organic EL element 200 that allows the glass substrate 201 to pass therethrough has been described, but this can be easily changed to the top emission type. That is, a reflective layer made of aluminum or the like having a thickness of 200 nm or more is formed between the glass substrate 201 and the interlayer insulating layer 202, and Mg / Ag that is resistant to oxidation is used as the second electrode having optical transparency. By using the structure excluding 210, a top emission type structure having the same effect can be obtained. Moreover, it is also possible to obtain a structure that is visible on both sides by not forming the light reflecting layer.

  Next, a method for manufacturing the structure shown in FIGS. 6A and 6B will be described with reference to FIGS. Since this manufacturing method has much in common with (Organic EL element structure and manufacturing method-1), the differences from the above-described steps will be described to avoid duplication. Even in this case, before entering the actual manufacturing process, a monitoring organic functional layer is formed on the monitoring substrate having the flat monitoring interlayer insulating layer in the partition wall (step A), and the monitoring is performed. An interlayer insulating layer in which the effective optical path length of the interlayer insulating layer is controlled in order to reduce the visual intensity fluctuation caused by the layer thickness distribution of the organic functional layer for monitoring by measuring the layer thickness distribution of the organic functional layer. It is preferable to execute the step of forming (Step C).

  First, after step 1 is completed, step 2A is performed instead of step 2. The difference between the steps 2 and 2A is that the concave portion is formed in the step 2, whereas the convex portion is formed in the step 2A. Therefore, the arrangement of the photoresist layer 212 is different. FIG. 8 shows a cross-sectional view after step 2A. Next, steps 3 to 9 are performed.

  Next, in place of step 10, step 10A is performed. The difference between Step 10 and Step 10A is that in the drying step of the organic functional layer precursor, a step of performing reduced-pressure drying performed by reducing the pressure from atmospheric pressure in less than 5 minutes, more preferably in less than 1 minute can be used. . By using this process, the organic functional layer 208 having a thin layer thickness in the region A and a thick layer thickness in the region B is formed. The degree of vacuum in the reduced-pressure atmosphere may be set so that the time required for drying falls within the above value. As a specific example, for example, a value of about several Pa can be used, but this is an example, and the value is not limited to this value. By using this step, the organic functional layer 208 having a thick layer in the region A and a thin layer in the region B is formed.

  Hereinafter, the organic EL element 200 shown in FIG. 6 is formed by performing the steps 11-12. The organic EL element 200 manufactured in this process is of a bottom emission type, but this can be easily changed to a top emission type. That is, a reflective layer made of aluminum or the like having a thickness of 200 nm or more is formed between the glass substrate 201 and the interlayer insulating layer 202, and Mg / Ag that is resistant to oxidation is used as the second electrode having optical transparency. By using the structure excluding 210, a top emission type structure having the same effect can be obtained. Moreover, it is also possible to obtain a structure that is visible on both sides by not forming the light reflecting layer.

(Structure of organic EL element and manufacturing method-3)
Hereinafter, the manufacturing method and structure of the organic EL element according to the present embodiment will be described. FIG. 9A is a plan view of the organic EL element 200, and FIG. 9B is a cross-sectional view taken along the line AA ′ in FIG. The difference from the (Organic EL element structure and manufacturing method-1) is that the central interlayer insulating layer 202A (region A) using silicon oxide having a low refractive index (1.45) inside the effective light emitting region 211 in plan view. ) Is disposed to shorten the effective optical path length, and the peripheral interlayer insulating layer 202B (region B) using silicon nitride having a high refractive index (2.0) is disposed so as to surround the silicon oxide region in plan view. The interlayer insulating layer 202 is disposed at about 400 nm. Here, the region A has, for example, a circular shape with a diameter of 40 μm in plan view. In addition, about conditions, such as a layout, it applies to (Structure and manufacturing method-1 of an organic EL element).

  In the case of using this device structure, in the region B, the thickness of the organic functional layer 208 is reduced, so that the electric resistance is lowered and the current is concentrated (the arrows in the figure schematically indicate the current density). Therefore, the absolute light intensity in the region corresponding to the region B is higher than that in the region corresponding to the region A.

  On the other hand, in the region B, since the silicon nitride having a higher refractive index than that of the central interlayer insulating layer 202A is used for the peripheral interlayer insulating layer 202B, the effective optical path length is increased and the emission wavelength is shifted to the longer wavelength side. The human visual sensitivity peaks at 555 nm, and the visual sensitivity on the long wavelength side decreases. Therefore, the light emission wavelength in the region where the absolute light intensity is high becomes longer, whereby the absolute light intensity is corrected by the visibility characteristic. As a result, similar to the relationship shown in FIGS. 4A and 4B, the light emission characteristics in the effective light emission region 211 are corrected by the wavelength dependency of the visibility, and high uniformity is obtained for human vision. It becomes possible.

  Here, the bottom emission type organic EL element 200 that allows the glass substrate 201 to pass therethrough has been described, but this can be easily changed to the top emission type. That is, a reflective layer made of aluminum or the like having a thickness of 200 nm or more is formed between the glass substrate 201 and the interlayer insulating layer 202, and Mg / Ag that is resistant to oxidation is used as the second electrode having optical transparency. By using the structure excluding 210, a top emission type structure having the same effect can be obtained. Moreover, it is also possible to obtain a structure that is visible on both sides by not forming the light reflecting layer. Further, as shown in FIG. 15, the interlayer insulating layer 202 is composed of a silicon oxide layer in the central interlayer insulating layer 202A located in the region A and a silicon oxide / silicon nitride combination in the peripheral interlayer insulating layer 202B located in the region B. A layer may be used (a manufacturing method will be described later).

  Next, a method for manufacturing the structure shown in FIGS. 9A, 9B, and 15 will be described with reference to FIGS. Since this manufacturing method has much in common with (Organic EL element structure and manufacturing method-1), the differences from the above-described steps will be described to avoid duplication. Even in this case, before entering the actual manufacturing process, a monitoring organic functional layer is formed on the monitoring substrate having the flat monitoring interlayer insulating layer in the partition wall (step A), and the monitoring is performed. An interlayer insulating layer in which the effective optical path length of the interlayer insulating layer is controlled in order to reduce the visual intensity fluctuation caused by the layer thickness distribution of the organic functional layer for monitoring by measuring the layer thickness distribution of the organic functional layer. It is preferable to execute the step of forming (Step C).

  First, instead of steps 1 and 2, steps 1A and 2A shown below are executed.

  (Step 1A) The glass substrate 201 is cleaned, and a silicon nitride layer to be the peripheral interlayer insulating layer 202B is deposited to a thickness of about 400 nm using a CVD method (chemical vapor deposition method) or the like. Next, a photoresist layer 212A is formed, and the silicon nitride layer is dry-etched using sulfur hexafluoride gas or the like. FIG. 10A shows a cross-sectional view after this process is completed.

  (Step 2A) The photoresist layer 212A is removed by a method such as ashing, and a silicon oxide layer to be the central interlayer insulating layer 202A is deposited to a thickness of about 400 nm. Here, (Step 2A) is terminated in this state, and Step 3 and the subsequent steps are performed, whereby the shape of the interlayer insulating layer 202 shown in FIGS. 15 and 10B can be obtained. Then, as a continuation of (Step 2A), a photoresist layer 212B is formed, and unnecessary portions of the silicon oxide layer are etched using carbon tetrafluoride gas or the like. FIG. 10C shows a cross-sectional view after this process is completed. Here, by making the photoresist layer 212B slightly smaller than the region of the central interlayer insulating layer 202A, the silicon oxide layer formed to form the central interlayer insulating layer 202A can be etched flat.

  Subsequently, by performing steps 3 to 12, the organic EL element 200 shown in FIGS. 9A and 9B is formed.

  The organic EL element 200 manufactured in this process is of a bottom emission type, but this can be easily changed to a top emission type. That is, a reflective layer made of aluminum or the like having a thickness of 200 nm or more is formed between the glass substrate 201 and the interlayer insulating layer 202, and Mg / Ag that is resistant to oxidation is used as the second electrode having optical transparency. By using the structure excluding 210, a top emission type structure having the same effect can be obtained. Moreover, it is also possible to obtain a structure that is visible on both sides by not forming the light reflecting layer.

(Structure of organic EL element and manufacturing method-4)
Hereinafter, the manufacturing method and structure of the organic EL element according to the present embodiment will be described. FIG. 11A is a plan view of the organic EL element 200, and FIG. 11B is a cross-sectional view taken along line AA ′ in FIG. The difference from (Organic EL element structure and manufacturing method-1) is that the central interlayer insulating layer 202A (region) using silicon nitride having a high refractive index (2.0) inside the effective light emitting region 211 in plan view. A) is provided to increase the effective optical path length, and the refractive index is low so as to surround the central interlayer insulating layer 202A in plan view. (1.45) Peripheral interlayer insulating layer 202B (region B) using silicon oxide The point is that the interlayer insulating layer 202 having a thickness of approximately 400 nm is disposed. Here, the region A has, for example, a circular shape with a diameter of 40 μm in plan view. In addition, about conditions, such as a layout, it applies to (Structure and manufacturing method-1 of an organic EL element).

  As a condition for forming the central portion of the organic functional layer 208 to be thin, for example, after the organic functional layer precursor is discharged into the partition wall 206 using a droplet discharge method, reduced pressure drying is performed by reducing the pressure from the atmospheric pressure. Conditions including a step performed in less than 5 minutes, more preferably 1 minute or less can be used. The degree of vacuum in the reduced-pressure atmosphere may be set so that the time required for drying falls within the above value. As a specific example, for example, a value of about several Pa can be used, but this is an example, and the value is not limited to this value.

  When this device structure is used, the thickness of the organic functional layer 208 is reduced in the region A, so that the electrical resistance is lowered and the current is concentrated (the arrows in the figure schematically indicate the current density). Therefore, the absolute light intensity in the region corresponding to the region A is higher than that in the region corresponding to the region B.

  On the other hand, in region A, since the silicon oxide having a lower refractive index than that of the central interlayer insulating layer 202A is used for the peripheral interlayer insulating layer 202B, the effective optical path length is increased, and the emission wavelength is shifted to the longer wavelength side. The human visual sensitivity peaks at 555 nm, and the visual sensitivity on the long wavelength side decreases. Therefore, the light emission wavelength in the region where the absolute light intensity is high becomes longer, whereby the absolute light intensity is corrected by the visibility characteristic. As a result, similar to the relationship shown in FIGS. 4A and 4B, the light emission characteristics in the effective light emission region 211 are corrected by the wavelength dependency of the visibility, and high uniformity is obtained for human vision. It becomes possible.

  Here, the bottom emission type organic EL element 200 that allows the glass substrate 201 to pass therethrough has been described. However, this can be easily changed to the top emission type. That is, a reflective layer made of aluminum or the like having a thickness of 200 nm or more is formed between the glass substrate 201 and the interlayer insulating layer 202, and Mg / Ag that is resistant to oxidation is used as the second electrode having optical transparency. By using the structure excluding 210, a top emission type structure having the same effect can be obtained. Moreover, it is also possible to obtain a structure that is visible on both sides by not forming the light reflecting layer. Further, as shown in FIG. 16, the interlayer insulating layer 202 is made of silicon oxide / silicon nitride in the central interlayer insulating layer 202A located in the region A, and silicon oxide in the peripheral interlayer insulating layer 202B located in the region B. You may use (a manufacturing method is mentioned later).

  Next, a method for manufacturing the structure shown in FIGS. 11A, 11B, and 16 will be described with reference to FIGS. Since this manufacturing method has much in common with (Organic EL element structure and manufacturing method-1), the differences from the above-described steps will be described to avoid duplication. Even in this case, before entering the actual manufacturing process, a monitoring organic functional layer is formed on the monitoring substrate having the flat monitoring interlayer insulating layer in the partition wall (step A), and the monitoring is performed. An interlayer insulating layer in which the effective optical path length of the interlayer insulating layer is controlled in order to reduce the visual intensity fluctuation caused by the layer thickness distribution of the organic functional layer for monitoring by measuring the layer thickness distribution of the organic functional layer. It is preferable to execute the step of forming (Step C).

  First, instead of steps 1 and 2, steps 1A and 2A shown below are executed.

  (Step 1A) The glass substrate 201 is cleaned, and a silicon nitride layer to be the central interlayer insulating layer 202A is deposited by about 400 nm using a CVD method (chemical vapor deposition method) or the like. Next, a photoresist layer 212A is formed, and the silicon nitride layer is dry etched using sulfur hexafluoride gas or the like to form the center interlayer insulating layer 202A. FIG. 12A shows a cross-sectional view after this process is completed.

  (Step 2A) The photoresist layer 212A is removed by a method such as ashing, and a silicon oxide layer is deposited to a thickness of about 400 nm. Here, the shape of the interlayer insulating layer 202 shown in FIGS. 16 and 12B can be obtained by terminating (Step 2A) in this state and performing Step 3 and the subsequent steps. As a continuation of (Step 2A), a photoresist layer 212B is formed, and unnecessary portions of the silicon oxide layer are etched using carbon tetrafluoride gas or the like. FIG. 12C shows a cross-sectional view after this process is completed.

  Subsequently, by performing Steps 3 to 12, the organic EL element 200 shown in FIGS. 11A and 11B is formed. Here, by opening the photoresist layer 212B slightly larger than the region of the central interlayer insulating layer 202A, the raised portion at the end of the silicon oxide layer laminated to form the peripheral interlayer insulating layer 202B can be removed. it can.

  The organic EL element 200 manufactured in this process is of a bottom emission type, but this can be easily changed to a top emission type. That is, a reflective layer made of aluminum or the like having a thickness of 200 nm or more is formed between the glass substrate 201 and the interlayer insulating layer 202, and Mg / Ag that is resistant to oxidation is used as the second electrode having optical transparency. By using the structure excluding 210, a top emission type structure having the same effect can be obtained. Moreover, it is also possible to obtain a structure that is visible on both sides by not forming the light reflecting layer.

(Modification)
In the above-described embodiment, an optically transparent material having an insulating property can be used for the interlayer insulating layer. For example, a metal oxide such as aluminum oxide or a plastic may be used. Alternatively, glass obtained by adding an auxiliary material to silicon oxide, silicon nitride, or silicon nitride oxide may be used.

(Example of mounting on electronic equipment)
Hereinafter, with reference to FIG. 14, an electronic apparatus using the display device 1 (electro-optical device) including the organic EL element 200 described above will be described. FIG. 14A shows the configuration of a mobile phone provided with the display device 1. The cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and the display device 1. By operating the scroll button 3002, the screen displayed on the display device 1 is scrolled. FIG. 14B is a schematic diagram showing a configuration of a personal digital assistant (PDA) including the display device 1. The information portable terminal 4000 includes a display device 1 including a plurality of operation buttons 4001, a power switch 4002, and the organic EL element 200. When the operation button 4001 is operated, various kinds of information such as an address book and a schedule book are displayed on the display device 1.

  Note that examples of the electronic device on which the display device 1 including the organic EL element 200 is mounted include an in-vehicle speedometer, a tachometer, and a monitor other than those shown in FIG. And the organic EL element 200 mentioned above is applicable as a display part of these various electronic devices.

The schematic diagram which shows the wiring structure in the case of using an organic EL element as a display apparatus. The top view which shows the arrangement | sequence of an organic EL element typically. (A) is a top view of an organic EL element, (b) is the sectional view on the A-A 'line of (a). (A) is a graph which shows distribution of absolute light intensity, (b) is a graph which shows distribution of relative light intensity normalized by the visibility characteristic. (A)-(c) is process sectional drawing for demonstrating the process of forming an organic EL element. (A) is a top view of an organic EL element, (b) is the sectional view on the A-A 'line of (a). (A) is a graph which shows distribution of absolute light intensity, (b) is a graph which shows distribution of relative light intensity normalized by the visibility characteristic. Process sectional drawing for demonstrating the process of forming an organic EL element. (A) is a top view of an organic EL element, (b) is the sectional view on the A-A 'line of (a). (A)-(c) is process sectional drawing for demonstrating the process of forming an organic EL element. (A) is a top view of an organic EL element, (b) is the sectional view on the A-A 'line of (a). (A), (b) is process sectional drawing for demonstrating the process of forming an organic EL element. Chemical formula of the substance that forms the organic functional layer. (A) is a mobile phone to which an organic EL element is applied, and (b) is a schematic diagram illustrating a configuration of a portable information terminal (PDA) to which the organic EL element is applied. Sectional drawing of the organic EL element from which an interlayer insulation layer shape differs. Sectional drawing of the organic EL element from which an interlayer insulation layer shape differs.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 3 ... Pixel part, 4 ... Actual display area, 5 ... Dummy area, 17 ... Organic EL element, 20 ... Substrate, 23 ... Pixel electrode, 40 ... Pixel, 50 ... Counter electrode, 80 ... Scan line drive Circuit: 90 ... Inspection circuit, 100 ... Data line driving circuit, 101 ... Scanning line, 102 ... Signal line, 103 ... Power supply line, 113 ... Retention capacitor, 122 ... TFT, 123 ... TFT, 200 ... Organic EL element, 201 ... Glass substrate, 202 ... interlayer insulating layer, 202A ... center interlayer insulating layer, 202B ... peripheral interlayer insulating layer, 204 ... first electrode, 205 ... first partition, 206 ... partition, 207 ... hole injection layer, 208 ... organic function 209 ... second electrode, 210 ... light reflecting layer, 211 ... effective light emitting region, 212 ... photoresist layer, 212A ... photoresist layer, 212B ... photoresist layer, 213 ... organic functional layer precursor, 000 ... mobile phone, 3001 ... operation button, 3002 ... scroll button, 4000 ... portable information terminal, 4001 ... operation button, 4002 ... power switch.

Claims (19)

A substrate,
A first electrode having optical transparency disposed on the substrate;
An organic functional layer disposed on the first electrode and formed at a position at least partially overlapping the first electrode in plan view;
A second electrode on the organic functional layer, which is formed in a position overlapping at least a portion of the first electrode and the organic functional layer in a plan view, and has light transmittance;
A light transmissive interlayer insulating layer disposed between the substrate and the first electrode;
An organic electroluminescence device comprising:
In the effective light emitting region of the organic electroluminescence element, the interlayer insulating layer has a refractive index distribution having different refractive indexes in the central portion and the peripheral portion of the effective light emitting region ,
In the effective light emitting region, the organic functional layer is thin in a region where the refractive index of the interlayer insulating layer is high and thick in a region where the refractive index is low. The organic electroluminescence device according to claim 1,
The organic electroluminescent element, wherein the organic functional layer emits light having a peak wavelength of 555 nm or more. The organic electroluminescence device according to claim 1 or 2,
The organic electroluminescence element, wherein the interlayer insulating layer is formed of any one of silicon oxide, silicon nitride, silicon oxynitride, or a laminated structure thereof. An organic electroluminescence device according to any one of claims 1 to 3,
An organic electroluminescence element comprising a light reflection layer between the substrate and the interlayer insulating layer. It is an organic electroluminescent element as described in any one of Claim 1 to 4, Comprising:
An organic electroluminescence device comprising a light reflection layer on the second electrode. It is an organic electroluminescent element as described in any one of Claim 1 to 5, Comprising:
The organic electroluminescent element is characterized in that the organic functional layer is formed using a droplet discharge method.   It is an organic electroluminescent element of Claim 6, Comprising: The said organic functional layer is partitioned off by the partition, The organic electroluminescent element characterized by the above-mentioned. (1) forming a light transmissive interlayer insulating layer disposed on the substrate and having a distribution in the effective optical path length within the effective light emitting region;
(2) forming a light-transmitting first electrode on the interlayer insulating film in a region overlapping at least the effective light emitting region in plan view;
(3) forming an organic functional layer on the first electrode at least in a region overlapping with the effective light emitting region in plan view;
(4) forming a light transmissive second electrode on the organic functional layer and in a region overlapping at least the effective light emitting region in plan view;
Including
The interlayer insulating layer has a refractive index distribution in which a refractive index is different between a central portion and a peripheral portion of the effective light emitting region, and the organic functional layer is a region where the refractive index of the interlayer insulating layer is high in the effective light emitting region. A method for producing an organic electroluminescent device, characterized in that a thin layer has a thick layer thickness in a region having a low refractive index.   9. The method of manufacturing an organic electroluminescence element according to claim 8, wherein in the step (3), the organic functional layer is formed so as to emit light at a peak wavelength of 555 nm or more. Manufacturing method of luminescence element. It is a manufacturing method of the organic electroluminescent element according to claim 8 or 9,
A method for producing an organic electroluminescence element, comprising a step of forming a partition wall for partitioning the organic electroluminescence element between the step (2) and the step (3). It is a manufacturing method of the organic electroluminescent element according to claim 10,
Before the step (1),
(A) preparing a monitor substrate having a flat monitor interlayer insulating layer and a monitor partition having the same shape as the partition on the monitor interlayer insulating film;
(B) applying and drying an organic functional layer precursor for forming the organic functional layer in the monitor partition wall to form a monitor organic functional layer;
(C) measuring the layer thickness distribution of the monitor organic functional layer;
(D) determining an effective optical path length distribution of the interlayer insulating layer in order to mitigate visual intensity fluctuation caused by a layer thickness distribution of the monitor organic functional layer;
The manufacturing method of the organic electroluminescent element characterized by including. It is a manufacturing method of the organic electroluminescent element according to claim 11,
When the layer thickness distribution of the monitor organic functional layer in the monitor partition is thick at the center, the effective optical path length at the center of the interlayer insulating layer is larger than the effective optical path length at the periphery in the effective light emitting region. The manufacturing method of the organic electroluminescent element characterized by shortening. It is a manufacturing method of the organic electroluminescent element according to claim 12,
In the effective light emitting region, as a means for shortening the effective optical path length in the central portion of the interlayer insulating layer shorter than the effective optical path length in the peripheral portion, the layer thickness in the central portion of the interlayer insulating layer is made larger than the layer thickness in the peripheral portion. A method for producing an organic electroluminescent element, characterized in that the thickness is reduced. It is a manufacturing method of the organic electroluminescent element according to claim 13,
In the effective light emitting region, as a means for shortening the effective optical path length in the central portion of the interlayer insulating layer shorter than the effective optical path length in the peripheral portion, the refractive index in the central portion of the interlayer insulating layer is made larger than the refractive index in the peripheral portion. The manufacturing method of the organic electroluminescent element characterized by the above-mentioned. It is a manufacturing method of the organic electroluminescent element according to claim 11,
When the layer thickness distribution of the monitor organic functional layer in the monitor partition is thin at the central portion, the effective optical path length at the central portion of the interlayer insulating layer is set as the effective optical path length at the peripheral portion in the effective light emitting region. The manufacturing method of the organic electroluminescent element characterized by lengthening compared. It is a manufacturing method of the organic electroluminescent element according to claim 15,
In the effective light emitting region, as a means for making the effective optical path length in the central portion of the interlayer insulating layer longer than the effective optical path length in the peripheral portion, the layer thickness in the central portion of the interlayer insulating layer is larger than the layer thickness in the peripheral portion. A method for producing an organic electroluminescence element, wherein the thickness is increased. It is a manufacturing method of the organic electroluminescent element according to claim 15,
In the effective light emitting region, as a means for making the effective optical path length in the central portion of the interlayer insulating layer longer than the effective optical path length in the peripheral portion, the refractive index in the central portion of the interlayer insulating layer is larger than the refractive index in the peripheral portion. The manufacturing method of the organic electroluminescent element characterized by the above-mentioned. An electro-optical device including a plurality of organic electroluminescence elements,
The organic electroluminescence element according to any one of claims 1 to 7, wherein at least a part of the plurality of organic electroluminescence elements is an organic electroluminescence element that emits red light, and the organic electroluminescence element that emits red light. An electro-optical device that is an element.   An electronic device comprising the organic electroluminescence element according to claim 1.

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