JP5335286B2 - Semiconductor device manufacturing method and semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device in which a semiconductor chip mounted on a substrate is sealed with a sealing resin. In particular, the present invention relates to a technique for removing bubbles present in a sealing resin around a semiconductor chip.

  In recent years, with the thinning and miniaturization of electronic devices, there is a great need for lightening and thinning the semiconductor devices constituting the electronic devices. One example of a semiconductor device mounting method for realizing these requirements is COB (Chip on Board).

  Generally, a COB type semiconductor device has a semiconductor chip mounted and fixed on a substrate on which a wiring pattern is formed, and the semiconductor chip and the wiring pattern are bonded and connected by a gold wire or the like, and the semiconductor chip and the gold wire are covered. The structure is sealed and protected with resin.

  As a method for forming the sealing resin, a method is adopted in which an epoxy resin or the like is applied onto a semiconductor chip using a dispenser method or a printing method, and then the resin is cured.

  In a state where the sealing resin is applied onto the semiconductor chip using a dispenser method or a printing method, various bubbles are present in the sealing resin.

  Among such bubbles, there are small bubbles contained in the resin in the first place, but relatively large bubbles are formed around the side surface of the semiconductor chip by the resin application process such as the dispenser method and the printing method. It is known that. In particular, it is often seen that large bubbles are formed near the center of each side of the chip.

  Patent Document 1 and Patent Document 2 disclose methods for removing bubbles around the semiconductor chip.

  According to Patent Document 1, a technique is disclosed in which air bubbles are removed from the back surface of a substrate by the action of gravity by providing a through hole (through hole) in the vicinity of the periphery of the semiconductor chip.

According to Patent Document 1 and Patent Document 2, air bubbles are removed from the back surface of the substrate by suctioning the resin by providing a through hole (through hole) in the substrate in the vicinity of the periphery of the semiconductor chip. This technique is disclosed.
JP-A-4-171969 JP-A-8-335594

  However, all of the above prior arts are techniques for removing bubbles using through holes penetrating the front and back of the substrate. For this reason, the bubble passage leads to the back surface of the substrate, and the splashes of the resin generated at the time of defoaming when the bubbles are repelled and disappear adhere to the back surface of the substrate and the device on the back surface side of the substrate that supports the substrate.

  In addition, a method of positively discharging the resin through the back surface of the substrate is also disclosed. In this case, however, the resin adheres to the back surface of the substrate and the device on the back surface side of the substrate that supports the substrate.

  In the case where the resin adheres to the back surface of the substrate, there is a problem that in the form having the terminals on the back surface of the substrate, the terminals become dirty and the yield is lowered. In various general-purpose semiconductor manufacturing apparatuses, since the back surface of the substrate is often used as a processing standard, if the resin adheres to the back surface of the substrate, the processing accuracy cannot be obtained and the same yield reduction occurs.

  Furthermore, when the resin adheres to the device on the back side of the substrate that supports the substrate, the new substrate transported next is contaminated with the resin, causing a similar problem of yield reduction. Further, in order to prevent this, it is possible to clean the apparatus one by one, but there is a possibility that the operating rate is extremely lowered.

  In addition, the bubbles around the side surface of the semiconductor chip may be removed using a known vacuum defoaming method, but large bubbles on the side surface of the semiconductor chip are often generated relatively inside the sealing resin. It tends to remain in the sealing resin. The reason may be that the moving distance from the inside of the sealing resin to the surface through which the bubbles escape is long, and that the larger the bubbles, the greater the resistance received during movement in the resin, and therefore the moving speed of the bubbles is slowed. Further, when the sealing resin has a high viscosity, bubbles remaining in the sealing resin are likely to be generated.

  When bubbles are generated in the sealing resin, when the resin is heated and cured after application of the resin, low molecular components in the sealing resin are vaporized in the bubbles and an opening is generated on the surface of the sealing resin. However, there is a problem that the yield is lowered due to exposure of the chip and the gold wire.

  In view of the above-described problems, in the present invention, a method for manufacturing a semiconductor device that enables removal of bubbles present around a semiconductor chip of a sealing resin that seals the semiconductor chip without reducing yield and operating rate Another object is to provide a semiconductor device.

In order to solve the above problems, a method for manufacturing a semiconductor device of the present invention includes:
In a semiconductor device having a substrate, a semiconductor chip mounted on one surface of the substrate, and a sealing resin for sealing the semiconductor chip,
Preparing the substrate having a recess extending outward from the semiconductor chip mounting region side outside the mounting region of the semiconductor chip mounted on the surface;
Fixing the semiconductor chip inside the concave portion of the surface;
Applying a resin on the semiconductor chip, sealing the semiconductor chip with the resin and applying a sealing resin covering a part of the recess on the semiconductor chip side;
After the sealing resin application step, the step of removing bubbles in the sealing resin through the space between the resin and the recess by decompressing the entire periphery of the semiconductor device;
Curing the sealing resin;
It is characterized by having.

A substrate;
A semiconductor chip mounted on one surface of the substrate;
A method of manufacturing a semiconductor device having a sealing resin for sealing the semiconductor chip,
Outside the mounting area of the semiconductor chip mounted on the surface, a first recess extending outward from the semiconductor chip mounting area side, and a first surrounding the entire circumference of the semiconductor chip connected to the first recess Preparing the substrate having two recesses;
Fixing the semiconductor chip inside the concave portion of the surface;
Applying a resin on the semiconductor chip, sealing the semiconductor chip with the resin, and applying a sealing resin covering a part of the first recess on the semiconductor chip side and the second recess;
After the sealing resin application step, the step of removing bubbles in the sealing resin through the space between the resin and the recess by decompressing the entire periphery of the semiconductor device;
Curing the sealing resin;
It is characterized by having.

  With the semiconductor device of the present invention, it becomes possible to remove bubbles in the sealing resin of the semiconductor chip without contaminating the substrate backside or the device supporting the substrate on the backside of the substrate, thereby improving yield and operating rate. It has become possible.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is a plan view and a sectional view of a semiconductor device showing a first embodiment of the present invention.

  1A includes a substrate 101, a semiconductor chip 102 mounted on one surface of the substrate 101, and a metal wire 103 that connects the semiconductor chip 102 and a wiring 104 formed on the substrate surface. And a sealing resin 105 for sealing the semiconductor chip. The surface of the substrate 101 on which the semiconductor chip is mounted has a recess 106.

As the substrate 101, a printed wiring board having a recess 106 formed on the surface is used. Further, a printed wiring board and an insulating layer arranged in a pattern on the printed wiring board can be used as the substrate 101. In the latter substrate, it can be said that the patterned insulating layer has a recess, but the bottom of the recess may be the insulating layer or the surface of the printed wiring board. As the printed wiring board, a paper epoxy board, a glass epoxy board, a composite board in which a paper epoxy board and a glass epoxy board are combined, an alumina board, and the like can be used. FIG. 1B shows an example of the substrate 101. The substrate 101 is a glass epoxy substrate as a printed wiring board, and a recess 106 is formed on the surface. The substrate 101 and the semiconductor chip 102 are fixed with an adhesive 107 such as an epoxy resin. FIG. 1C shows another example of the substrate 101. The substrate 101 has a glass epoxy substrate as a printed wiring board and an insulating layer formed on the glass epoxy substrate. The insulating layer 109 is formed of an inorganic insulating layer made of, for example, SiO ₂ or an organic insulating layer such as a solder resist. The substrate 101 in FIG. 1C has a recess 106 formed by patterning the insulating layer 109. The formation of the recess 106 by the solder resist is performed by forming a solder resist on the surface of the printed wiring board 110 and then patterning the printed wiring board 110 directly using a photomask or a printing mask having a desired pattern. A printing method or the like is used.

  The semiconductor chip 102 can be applied without particular limitation to various discrete semiconductors such as diodes and transistors, ICs such as memory elements, LSIs, and the like. In addition, the present invention is a very effective technique because it can prevent light from being scattered by bubbles even in a semiconductor device using a light-emitting element such as an LED or a semiconductor chip having a semiconductor element such as a light-receiving element and a transparent resin. .

  The sealing resin 105 is required to have a low viscosity for the purpose of reliably sealing the semiconductor chip 102 and the metal wire 103. On the other hand, the sealing resin 105 is required to prevent the resin from getting wet over a certain area. Therefore, as the sealing resin 105, a resin having a viscosity of 10 to 400 Pa · s and a thixotropy of about 1.0 to 5.0 is used. By using such a resin, the sealing resin has a generally dome shape as shown in FIG. Note that a convex portion may be provided on the substrate 101 in order to suppress the spread of the sealing resin 105.

  Such a semiconductor device is different from the prior art in that, as a structure for removing bubbles, a recess 106 is formed on the surface of the substrate on the chip mounting side instead of a hole penetrating the front and back of the substrate. It is in. The concave portion is a portion having a depression on the surface of the substrate 101.

  In order to explain in more detail, a first area (A in the drawing) that is an area of the substrate surface outside the end of the semiconductor chip and covered with the sealing resin, outside the first area, and The region not covered with the sealing resin is defined as a second region (B in the figure). The substrate has a recess 106 extending from the first region to the second region defined as described above. It is sufficient that at least one recess is disposed on the surface of the substrate corresponding to each side of the semiconductor chip. Since bubbles frequently occur in the vicinity of the center of each side of the semiconductor chip, in the substrate of the semiconductor device in FIG. 1, the concave portion is arranged at a position corresponding to the center of each side of the semiconductor chip.

  As a result, one end of the recess is located near the semiconductor chip under the sealing resin. That is, one end of the concave portion can be positioned in the vicinity of the bubbles generated in the sealing resin application step. In addition, since the other end of the recess is located outside the sealing resin, the inside of the recess is also decompressed in the process of removing the bubbles by reducing the pressure around the semiconductor device, which will be described later. It is possible to remove it reliably. Specifically, the bubbles generated in the periphery of the semiconductor chip in the sealing resin are eliminated at the position indicated by part C in FIG. Since the bubbles are removed by a small conductance path, for example, when bubbles in the sealing resin are generated near the surface side away from the recess side, the bubbles are eliminated on the surface side as usual.

  Therefore, the problem is that bubbles remaining in the sealing resin after vacuum degassing are heated and expanded to expose semiconductor chips and metal wires, contamination of the backside of the substrate due to through holes in the substrate, and contamination of equipment. It is possible to prevent.

  It can also be said that the concave portion 106 has an exhaust function for the purpose of removing bubbles in the sealing resin. In order to obtain the exhaust function, it is only necessary to have a space so that the gas inside the bubbles is exhausted through the recess when the periphery of the semiconductor device is decompressed. Moreover, it is a preferable form for obtaining the exhaust function that the first concave portion is not filled with the resin when the sealing resin is applied, and the space is formed.

  In order to form the space, a shape that can sufficiently maintain the surface tension with respect to the resin to be used is required. As a shape for obtaining the surface tension, it is preferable that the width of the recess is 0.1 mm or more and 0.5 mm or less. By setting it to 0.1 mm or more, an exhaust path can be secured, and by setting it to 0.5 mm or less, it is possible to prevent the resin from being filled when the resin is applied, and to maintain the space. is there.

  The shape of the recess 106 is not particularly limited as long as it extends from the first region to the second region. However, as the shape that is most easily processed and the surface tension is likely to work, the recess is preferably a groove. is there. As the groove, any of a square groove, a U groove, a V groove and the like can be selected. And the path | route of a recessed part contains linear form and curved form. In the cross section of the groove, the shape of the corner on the substrate surface side of the groove is preferably a C surface, a right angle or an acute angle instead of the R surface.

  In FIG. 1B, the part indicated by d indicates the distance from the end of the semiconductor chip to the recess. If the distance d is too large, there is a high possibility that bubbles generated near the semiconductor chip remain. On the other hand, if the portion d is made too small, the distance between the semiconductor chip and the atmospheric region becomes small, leading to a decrease in reliability. In view of the above balance, the distance d is preferably 0.2 mm or greater and 2.0 mm or less, and more preferably 0.5 mm or greater and 1.0 mm or less.

  2 and 3 are plan views showing the shape of the recesses different from those in FIG.

  FIG. 2 shows a semiconductor device in which a plurality of recesses 106 are provided on the substrate surface for each side of the semiconductor chip 102.

  In consideration of the fact that the concave portion 106 has a high frequency of occurrence of bubbles at the center of each side of the semiconductor chip, the bubble may be removed if it has one concave portion at the center of each side as shown in FIG. Is high and can improve the yield. However, by providing a plurality of recesses 106 as shown in FIG. 2, bubbles generated outside the vicinity of the center of each side of the semiconductor chip 102 can be removed, so that the yield can be further improved.

  FIG. 3 shows a semiconductor device in which the concave portions 106 on the surface of the substrate 301 are provided in parallel to the respective sides of the semiconductor chip 102. In the form of the semiconductor device of FIG. 3, since the concave portions are provided in almost the vicinity of the vicinity of the semiconductor chip, bubbles generated in the vicinity of each side of the semiconductor chip 102 can be almost removed, which is more preferable.

  Next, the manufacturing method of the present invention having the following steps (a) to (e) will be described in detail with reference to FIGS.

  Step (a) is a step of preparing a substrate 101 for mounting the semiconductor chip 102 on the surface. The surface of the substrate 101 on which the semiconductor chip is mounted has a recess extending outward from the semiconductor chip mounting region side outside the end of the mounting region to which the semiconductor chip 102 is fixed (FIG. 1A and FIG. 1 (b)).

  Step (b) is a step of fixing the semiconductor chip 102 on the semiconductor chip mounting region inside the concave portion of the substrate 101. Further, the semiconductor chip 102 and the wiring 104 of the substrate 101 are electrically connected. First, the semiconductor chip 102 is fixed to the semiconductor chip mounting region inside the recess 106 of the substrate 101 using an adhesive 107 such as an epoxy resin (see FIG. 1B). Thereafter, the metal wire 103 such as a gold wire is used to electrically connect the terminal on the semiconductor chip 102 and the wiring 104 on the substrate (see FIG. 1A). As a connection method, a known wire bonding method or the like can be used.

  Step (c) is a step of applying a sealing resin 105 that covers the semiconductor chip 102 and part of the substrate surface. First, as shown in FIG. 4A, a resin 402 is supplied from a dispenser 401 onto a semiconductor chip. Then, as shown in FIG. 4B, the semiconductor chip 102 is sealed with resin, and at the same time, coating is performed so as to cover the semiconductor chip side in the longitudinal direction of the recess 106. Further, a state is shown in which bubbles 403 are generated in the periphery of the semiconductor chip. As a resin application method, a dispensing method using a needle or a printing method can be used. The area outside the edge of the semiconductor chip on the substrate surface and covered with the sealing resin is the first area of the substrate, the area outside the first area and not covered with the sealing resin Is the second region of the substrate.

  In the step (d), after the sealing resin application step, the entire periphery of the semiconductor device in which the sealing resin 105 is applied to the semiconductor chip 102 mounted on the substrate 101 is decompressed, so that the sealing resin in the peripheral portion of the semiconductor chip It is a step of removing bubbles inside. After application of the sealing resin 105, the periphery of the semiconductor device formed in steps (a) to (c) is decompressed by a pump or the like. As shown in FIG. 4C, since the space inside the recess is also decompressed by this decompression, the bubbles around the semiconductor chip expand because the gas inside expands. And as shown in FIG.4 (d), a bubble reaches | attains the recessed part 106, and as shown in FIG.4 (e), a bubble is defoamed. The gas inside the bubble is exhausted through the recess 106. That is, bubbles are removed through the space between the sealing resin 105 and the recess 106. Note that the bubbles remaining in the vicinity of the recess 106 expand when the periphery of the semiconductor device is depressurized and move toward the recess 106 due to a difference in atmospheric pressure, so that the recess 106 functions effectively to remove the bubbles. . It is also a suitable method to heat at a temperature that does not start the curing of the sealing resin 105 during the decompression step. By heating the sealing resin 105, the viscosity of the sealing resin 105 can be reduced, and the resistance when bubbles move can be reduced. As a result, it is possible to increase the bubble removal capability.

  In addition, the recess 106 forming a space at the start of the decompression process becomes wet with the resin due to the scattering of the resin accompanying defoaming when the decompression is performed, and the recess 106 is filled with the resin starting from that. May end up. Further, in the curing step, the concave portion 106 may be filled with the resin due to a temporary decrease in the viscosity of the sealing resin 105. However, in the present invention, if a space is created so that the gas inside the bubbles is exhausted through the recess when the periphery of the semiconductor device is decompressed, the semiconductor device has an exhaust function. Therefore, even if the concave portion is filled with resin after removing the bubbles, it is considered that the shape of the concave portion 106 belongs to the technical scope of the present invention when it is estimated that the concave portion 106 has an exhaust function.

  Step (e) is a step of curing the sealing resin 105. After the decompression step is completed, the sealing resin 105 is cured to complete the semiconductor device of the present invention.

(Second embodiment)
FIG. 5 is a plan view and a cross-sectional view of a semiconductor device showing a second embodiment of the present invention.

  FIG. 5A is a plan view of the semiconductor device of this embodiment. This embodiment is different from the first embodiment in that a recess 106 on the substrate surface surrounds the entire circumference of the semiconductor chip 102 as a structure for removing bubbles. In addition, since the other structure is the same as that of what is shown in FIG. 1, the same code | symbol is attached | subjected to the same member and description is abbreviate | omitted.

  In order to explain in more detail, a first region (G in the drawing) that is an area covered with a sealing resin on the substrate surface outside the edge of the semiconductor chip, and outside the first area; The region not covered with the sealing resin is defined as a second region (H in the figure). The substrate has a recess extending from the first region to the second region defined as described above. Further, for the description of the recess in which the entire circumference of the semiconductor chip is surrounded by the recess in the first region, a recess extending from the first region to the second region is connected to the first recess 506 and the first recess. A recess surrounding the entire circumference of the semiconductor chip is referred to as a second recess 507.

  The effect of providing the first recess has been described in the first embodiment. However, by providing the second recess, the entire periphery of the semiconductor chip is surrounded by the recess.

  As a result, in the method of providing holes on the front and back as in the prior art, there was a problem that bubbles generated in the area where no holes existed, but by providing the second recess, any place around the semiconductor chip It is possible to deal with bubbles generated in

  Therefore, in this embodiment, in addition to the effect of preventing the contamination of the back surface of the substrate due to the scattering of the resin at the time of defoaming and the contamination of the device supporting the substrate, a structure capable of removing bubbles over the entire circumference of the semiconductor chip Can be provided.

  It can be said that the concave portion 106 has an exhaust function for removing bubbles in the sealing resin as a whole. The first concave portion 506 can be said to have an exhaust function for the purpose of removing bubbles in the sealing resin, and the second concave portion 507 can lead out the gas degassed from the sealing resin to the first concave portion 506. It can be said that it has. In order to obtain the derivation function, it is only necessary to create a space so that the gas inside the bubble is exhausted through the second recess and the first recess when the periphery of the semiconductor device is decompressed. The formation of a space without filling the first recess and the second recess with the resin when the sealing resin is applied is a preferable form for the recess 106 to obtain an exhaust function.

  Therefore, the width and shape of the recess 106 are determined for the same reason as in the first embodiment. That is, the width of the second recess of the recess 106 is preferably 0.1 mm or more and 0.5 mm or less.

  The shape of the second recess 507 is not particularly limited, but as the shape that can be most easily processed and the surface tension is most likely to work, the second recess is preferably a groove. Similarly to the groove of the first recess, any of a square groove, a U groove, a V groove, and the like can be selected for the groove of the second recess. In the cross section of the groove, the shape of the corner on the substrate surface side of the groove is preferably a C surface, a right angle or an acute angle instead of the R surface.

  In FIG. 5B, the part indicated by d2 indicates the distance from the end of the semiconductor chip to the second recess. If the distance d2 is too large, there is a high possibility that bubbles generated near the semiconductor chip remain. On the other hand, if the portion d2 is made too small, the distance between the semiconductor chip and the atmospheric region becomes small, leading to a decrease in reliability. From the above balance, the distance d2 is preferably 0.2 mm or more and 2.0 mm or less, more preferably 0.5 mm or more and 1.0 mm or less.

  6 and 7 are plan views showing the form of the second recesses different from those in FIG. In the figure, only the structure of the semiconductor chip and the first and second recesses around the semiconductor chip is illustrated.

  FIG. 6 shows a semiconductor device in which the second recess 607 is provided in duplicate.

  Although FIG. 5 shows a case where the second recess is single, a plurality of second recesses 607 can be provided as shown in FIG. The second recess 607 is connected to the first recess 606. By providing a plurality of second recesses 607, it is possible to remove bubbles generated in a wider area around the semiconductor chip, so that the yield can be further improved.

  FIG. 7 shows a semiconductor device having a convex portion 708 in the second concave portion 707. In FIG. 7, the plurality of island-shaped convex portions 708 are illustrated, but the shape and the number of the convex portions 708 are not particularly limited. Therefore, in order to remove bubbles, the groove widths of the first recess 706 and the second recess 707 are required to be within the above-described range. With such a configuration, a space is formed without filling the concave portion with the resin in the coating step, and it becomes possible to remove bubbles.

  Next, with reference to FIG.4 and FIG.5, the manufacturing method of this invention which has the process of the following (a)-(e) is explained in full detail.

  Step (a) is a step of preparing a substrate 501 for mounting the semiconductor chip 102 on the surface. The surface of the substrate 501 on which the semiconductor chip is mounted has a recess 106 that extends outward from the end of the mounting area on which the semiconductor chip is mounted and extends outward from the semiconductor chip mounting area side. The recessed part 106 is comprised by the 1st recessed part 506 and the 2nd recessed part 507 (refer Fig.5 (a) and FIG.5 (b)).

  Step (b) is a step of fixing the semiconductor chip 102 on the semiconductor chip mounting region inside the recess 106 of the substrate 501. Furthermore, the semiconductor chip 102 and the wiring 104 of the substrate 501 are electrically connected to each other, which is the same as in the first embodiment.

  Step (c) is a step of applying a sealing resin that covers part of the semiconductor chip 102 and the substrate surface. The difference from the first embodiment of this step is that, as shown in FIG. 5A, the first region G covered with the sealing resin includes a part of the first recess 506 and the second recess 507. It is a point to include.

  In the step (d), after the sealing resin application step, the entire periphery of the semiconductor device in which the sealing resin 105 is applied to the semiconductor chip 102 mounted on the substrate 501 is decompressed, so that the sealing resin around the semiconductor chip is obtained. It is a step of removing bubbles inside. The difference from the first embodiment of this step is that bubbles around the semiconductor chip reach at least one of the first concave portion 506 and the second concave portion 506 in the first region and are defoamed during decompression. Is a point. The explanation of the bubble removal is the same as that in the step (d) of the first embodiment and FIGS. 4 (c) to 4 (e).

  Step (e) is a step of curing the sealing resin 105 and is the same as in the first embodiment.

  As described above, the semiconductor device capable of removing the bubbles in the sealing resin has been described. However, the present invention is not limited to the above embodiment as long as the characteristics of the present invention are not impaired.

1 is a schematic view of a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a schematic diagram showing a form of a semiconductor device different from FIG. 1. FIG. 2 is a schematic diagram showing a form of a semiconductor device different from FIG. 1. It is the schematic explaining the manufacturing method of the semiconductor device of this invention. It is the schematic of the semiconductor device of 2nd embodiment of this invention. FIG. 6 is a schematic view showing a form of a semiconductor device different from FIG. 5. FIG. 6 is a schematic view showing a form of a semiconductor device different from FIG. 5.

Explanation of symbols

101, 201, 301, 401 Substrate 102 Semiconductor chip 103 Metal wire 104 Wiring 105 Sealing resin 106 Recess 107 Adhesive 109 Insulating layer 110 Printed wiring board 506, 606, 706 First recess 507, 607, 707 Second recess 708 Convex Part

Claims (9)

A substrate,
A semiconductor chip mounted on one surface of the substrate;
A method of manufacturing a semiconductor device having a sealing resin for sealing the semiconductor chip,
Preparing the substrate having a recess extending outward from the semiconductor chip mounting region side outside the mounting region of the semiconductor chip mounted on the surface;
Fixing the semiconductor chip inside the concave portion of the surface;
Applying a resin on the semiconductor chip, sealing the semiconductor chip with the resin and applying a sealing resin covering a part of the recess on the semiconductor chip side;
After the sealing resin application step, the step of removing bubbles in the sealing resin through the space between the resin and the recess by decompressing the entire periphery of the semiconductor device;
Curing the sealing resin;
A method for manufacturing a semiconductor device, comprising:   2. The method of manufacturing a semiconductor device according to claim 1, wherein the recess surrounds the entire periphery of the semiconductor chip with an area outside the mounting area of the semiconductor chip and covered with the sealing resin.   The method for manufacturing a semiconductor device according to claim 1, wherein the substrate has at least one recess for each side of the semiconductor chip to be mounted.   The method for manufacturing a semiconductor device according to claim 1, wherein the concave portion is a groove.   5. The method of manufacturing a semiconductor device according to claim 1, wherein a width of the recess is 0.1 mm or more and 0.5 mm or less.   6. The method of manufacturing a semiconductor device according to claim 1, wherein a distance from an end of the semiconductor chip to the recess is 0.2 mm or more and 2.0 mm or less.   The said board | substrate has a printed wiring board and the insulating layer arrange | positioned on the said printed wiring board, The said insulating layer has the said recessed part, The Claim 1 characterized by the above-mentioned. A method for manufacturing a semiconductor device. In the bubble removal step,
The method for manufacturing a semiconductor device according to claim 1, wherein the sealing resin is heated. A substrate,
A semiconductor chip mounted on one surface of the substrate;
A method of manufacturing a semiconductor device having a sealing resin for sealing the semiconductor chip,
Outside the mounting area of the semiconductor chip mounted on the surface, a first recess extending outward from the semiconductor chip mounting area side, and a first surrounding the entire circumference of the semiconductor chip connected to the first recess Preparing the substrate having two recesses;
Fixing the semiconductor chip inside the concave portion of the surface;
Applying a resin onto the semiconductor chip, sealing the semiconductor chip with the resin, and applying a sealing resin covering a part of the first recess on the semiconductor chip side and the second recess, and the sealing A step of removing bubbles in the sealing resin through a space between the resin and the recess by decompressing the entire periphery of the semiconductor device after the stop resin application step;
Curing the sealing resin;
A method for manufacturing a semiconductor device, comprising:

Images