JP5388162B2 - Method for producing corrosion-resistant conductive coating material - Google Patents
Method for producing corrosion-resistant conductive coating material Download PDFInfo
- Publication number
- JP5388162B2 JP5388162B2 JP2008011122A JP2008011122A JP5388162B2 JP 5388162 B2 JP5388162 B2 JP 5388162B2 JP 2008011122 A JP2008011122 A JP 2008011122A JP 2008011122 A JP2008011122 A JP 2008011122A JP 5388162 B2 JP5388162 B2 JP 5388162B2
- Authority
- JP
- Japan
- Prior art keywords
- acid
- conductive polymer
- copper
- substrate
- carboxylic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims description 58
- 238000005260 corrosion Methods 0.000 title claims description 54
- 230000007797 corrosion Effects 0.000 title claims description 53
- 238000000576 coating method Methods 0.000 title claims description 47
- 239000011248 coating agent Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- -1 carboxylic acid anion Chemical class 0.000 claims description 92
- 229920001940 conductive polymer Polymers 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 75
- 229910052802 copper Inorganic materials 0.000 claims description 69
- 239000010949 copper Substances 0.000 claims description 69
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 64
- 238000006116 polymerization reaction Methods 0.000 claims description 44
- 239000000178 monomer Substances 0.000 claims description 18
- 239000008151 electrolyte solution Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 description 44
- 239000002253 acid Substances 0.000 description 43
- 239000000243 solution Substances 0.000 description 38
- 238000006243 chemical reaction Methods 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 239000002019 doping agent Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 17
- 238000007747 plating Methods 0.000 description 17
- 239000003115 supporting electrolyte Substances 0.000 description 16
- 238000012360 testing method Methods 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 238000007654 immersion Methods 0.000 description 12
- 239000002904 solvent Substances 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 239000002585 base Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 238000004090 dissolution Methods 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 125000000129 anionic group Chemical group 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 6
- 238000010248 power generation Methods 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 6
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IAGVANYWTGRDOU-UHFFFAOYSA-N 1,4-dioxonaphthalene-2-sulfonic acid Chemical compound C1=CC=C2C(=O)C(S(=O)(=O)O)=CC(=O)C2=C1 IAGVANYWTGRDOU-UHFFFAOYSA-N 0.000 description 4
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 4
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 description 4
- 239000010951 brass Substances 0.000 description 4
- JBDSSBMEKXHSJF-UHFFFAOYSA-N cyclopentanecarboxylic acid Chemical compound OC(=O)C1CCCC1 JBDSSBMEKXHSJF-UHFFFAOYSA-N 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229920000128 polypyrrole Polymers 0.000 description 4
- 229920000123 polythiophene Polymers 0.000 description 4
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 4
- 125000000542 sulfonic acid group Chemical group 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical group CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OECYNZNWMJQEKN-UHFFFAOYSA-M CC[N+](CC)(CC)CC.C1=CC2=C(C=CC(=C2)[O-])C=C1C(=O)O Chemical compound CC[N+](CC)(CC)CC.C1=CC2=C(C=CC(=C2)[O-])C=C1C(=O)O OECYNZNWMJQEKN-UHFFFAOYSA-M 0.000 description 3
- 229910000570 Cupronickel Inorganic materials 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 239000004115 Sodium Silicate Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 3
- 150000004056 anthraquinones Chemical class 0.000 description 3
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 125000004151 quinonyl group Chemical group 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
- 229910052911 sodium silicate Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- OXFGRWIKQDSSLY-UHFFFAOYSA-N 1,2,3,4-tetrahydroisoquinolin-2-ium-1-carboxylate Chemical compound C1=CC=C2C(C(=O)O)NCCC2=C1 OXFGRWIKQDSSLY-UHFFFAOYSA-N 0.000 description 2
- UZSCBEJDBQICON-UHFFFAOYSA-N 1,4-naphthoquinone-2-carboxylic acid Chemical compound C1=CC=C2C(=O)C(C(=O)O)=CC(=O)C2=C1 UZSCBEJDBQICON-UHFFFAOYSA-N 0.000 description 2
- KOUPQOUHBCJXQF-UHFFFAOYSA-N 1-(thiophene-2-carbonyl)cyclohexane-1-carboxylic acid Chemical compound C=1C=CSC=1C(=O)C1(C(=O)O)CCCCC1 KOUPQOUHBCJXQF-UHFFFAOYSA-N 0.000 description 2
- CCFAKBRKTKVJPO-UHFFFAOYSA-N 1-anthroic acid Chemical compound C1=CC=C2C=C3C(C(=O)O)=CC=CC3=CC2=C1 CCFAKBRKTKVJPO-UHFFFAOYSA-N 0.000 description 2
- WIYFEDPFIIDANF-UHFFFAOYSA-N 1-azaniumyl-3,4-dihydro-2h-naphthalene-1-carboxylate Chemical compound C1=CC=C2C(N)(C(O)=O)CCCC2=C1 WIYFEDPFIIDANF-UHFFFAOYSA-N 0.000 description 2
- PRPINYUDVPFIRX-UHFFFAOYSA-N 1-naphthaleneacetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CC=CC2=C1 PRPINYUDVPFIRX-UHFFFAOYSA-N 0.000 description 2
- MMEDJBFVJUFIDD-UHFFFAOYSA-N 2-[2-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC=C1CC(O)=O MMEDJBFVJUFIDD-UHFFFAOYSA-N 0.000 description 2
- MFUSKSNVTLWSPN-UHFFFAOYSA-N 2-chloro-2-fluoro-1-phenylcyclohexane-1-carboxylic acid Chemical compound C1CCC(C(C1)(C2=CC=CC=C2)C(=O)O)(F)Cl MFUSKSNVTLWSPN-UHFFFAOYSA-N 0.000 description 2
- VDBSLFSIVYVLKK-UHFFFAOYSA-N 2-chloro-2-fluoro-1-phenylcyclopentane-1-carboxylic acid Chemical compound C1CC(C(C1)(F)Cl)(C2=CC=CC=C2)C(=O)O VDBSLFSIVYVLKK-UHFFFAOYSA-N 0.000 description 2
- NGUYDTBNGCDFEI-UHFFFAOYSA-N 2-phenyldiazenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1N=NC1=CC=CC=C1 NGUYDTBNGCDFEI-UHFFFAOYSA-N 0.000 description 2
- BGHIEJHQLIHWPX-UHFFFAOYSA-N 3-[(4-anilinonaphthalen-1-yl)diazenyl]naphthalene-2,7-disulfonic acid Chemical compound OS(=O)(=O)C1=CC2=CC(S(=O)(=O)O)=CC=C2C=C1N=NC(C1=CC=CC=C11)=CC=C1NC1=CC=CC=C1 BGHIEJHQLIHWPX-UHFFFAOYSA-N 0.000 description 2
- HYKDWGUFDOYDGV-UHFFFAOYSA-N 4-anilinobenzenesulfonic acid Chemical compound C1=CC(S(=O)(=O)O)=CC=C1NC1=CC=CC=C1 HYKDWGUFDOYDGV-UHFFFAOYSA-N 0.000 description 2
- PSCXFXNEYIHJST-UHFFFAOYSA-N 4-phenylbut-3-enoic acid Chemical compound OC(=O)CC=CC1=CC=CC=C1 PSCXFXNEYIHJST-UHFFFAOYSA-N 0.000 description 2
- LUGFLWHCEHCAOB-UHFFFAOYSA-N 7-oxobenzo[a]phenalene-1-sulfonic acid Chemical compound C1(=CC=C2C=CC=C3C(=O)C4=CC=CC=C4C1=C23)S(=O)(=O)O LUGFLWHCEHCAOB-UHFFFAOYSA-N 0.000 description 2
- POPBYCBXVLHSKO-UHFFFAOYSA-N 9,10-dioxoanthracene-1-carboxylic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(=O)O POPBYCBXVLHSKO-UHFFFAOYSA-N 0.000 description 2
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 2
- SHZISIVCRUJXFZ-UHFFFAOYSA-M C(C)[N+](CC)(CC)CC.C1=C(C=CC=2C(C3=CC=CC=C3C(C12)=O)=O)S(=O)(=O)[O-] Chemical compound C(C)[N+](CC)(CC)CC.C1=C(C=CC=2C(C3=CC=CC=C3C(C12)=O)=O)S(=O)(=O)[O-] SHZISIVCRUJXFZ-UHFFFAOYSA-M 0.000 description 2
- QIYGMFNEIPHCJJ-UHFFFAOYSA-N C1=CC=C2C(=C1)C(=O)C3=C(C2=O)C=C(C=C3)C(=O)[O-].[NH4+] Chemical compound C1=CC=C2C(=C1)C(=O)C3=C(C2=O)C=C(C=C3)C(=O)[O-].[NH4+] QIYGMFNEIPHCJJ-UHFFFAOYSA-N 0.000 description 2
- OUSROQMBQZHZOF-UHFFFAOYSA-M CC[N+](CC)(CC)CC.C1=CC=C2C=C3C=C(C=CC3=CC2=C1)S(=O)(=O)[O-] Chemical compound CC[N+](CC)(CC)CC.C1=CC=C2C=C3C=C(C=CC3=CC2=C1)S(=O)(=O)[O-] OUSROQMBQZHZOF-UHFFFAOYSA-M 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YVHAIVPPUIZFBA-UHFFFAOYSA-N Cyclopentylacetic acid Chemical compound OC(=O)CC1CCCC1 YVHAIVPPUIZFBA-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- YZGQDNOIGFBYKF-UHFFFAOYSA-N Ethoxyacetic acid Chemical compound CCOCC(O)=O YZGQDNOIGFBYKF-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- XKTMIJODWOEBKO-UHFFFAOYSA-M Guinee green B Chemical compound [Na+].C=1C=C(C(=C2C=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C=2C=CC=CC=2)C=CC=1N(CC)CC1=CC=CC(S([O-])(=O)=O)=C1 XKTMIJODWOEBKO-UHFFFAOYSA-M 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- DGOBMKYRQHEFGQ-UHFFFAOYSA-L acid green 5 Chemical compound [Na+].[Na+].C=1C=C(C(=C2C=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C=2C=CC(=CC=2)S([O-])(=O)=O)C=CC=1N(CC)CC1=CC=CC(S([O-])(=O)=O)=C1 DGOBMKYRQHEFGQ-UHFFFAOYSA-L 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- ILFFFKFZHRGICY-UHFFFAOYSA-N anthracene-1-sulfonic acid Chemical compound C1=CC=C2C=C3C(S(=O)(=O)O)=CC=CC3=CC2=C1 ILFFFKFZHRGICY-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- CUFNKYGDVFVPHO-UHFFFAOYSA-N azulene Chemical compound C1=CC=CC2=CC=CC2=C1 CUFNKYGDVFVPHO-UHFFFAOYSA-N 0.000 description 2
- LHMRXAIRPKSGDE-UHFFFAOYSA-N benzo[a]anthracene-7,12-dione Chemical compound C1=CC2=CC=CC=C2C2=C1C(=O)C1=CC=CC=C1C2=O LHMRXAIRPKSGDE-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- PVEOYINWKBTPIZ-UHFFFAOYSA-N but-3-enoic acid Chemical compound OC(=O)CC=C PVEOYINWKBTPIZ-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- YAUODDQCNOBEDJ-UHFFFAOYSA-N chromeno[3,2-b]pyridin-10-one Chemical compound C1=CN=C2C(=O)C3=CC=CC=C3OC2=C1 YAUODDQCNOBEDJ-UHFFFAOYSA-N 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- NKLPQNGYXWVELD-UHFFFAOYSA-M coomassie brilliant blue Chemical compound [Na+].C1=CC(OCC)=CC=C1NC1=CC=C(C(=C2C=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C=2C=CC(=CC=2)N(CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C=C1 NKLPQNGYXWVELD-UHFFFAOYSA-M 0.000 description 2
- MLIREBYILWEBDM-UHFFFAOYSA-N cyanoacetic acid Chemical compound OC(=O)CC#N MLIREBYILWEBDM-UHFFFAOYSA-N 0.000 description 2
- QYQADNCHXSEGJT-UHFFFAOYSA-N cyclohexane-1,1-dicarboxylate;hydron Chemical compound OC(=O)C1(C(O)=O)CCCCC1 QYQADNCHXSEGJT-UHFFFAOYSA-N 0.000 description 2
- LJOODBDWMQKMFB-UHFFFAOYSA-N cyclohexylacetic acid Chemical compound OC(=O)CC1CCCCC1 LJOODBDWMQKMFB-UHFFFAOYSA-N 0.000 description 2
- ZILCTNWIPQCEPU-UHFFFAOYSA-N cyclopenta-1,3-diene cyclopenta-2,4-diene-1-sulfonic acid iron(2+) Chemical compound [Fe++].c1cc[cH-]c1.OS(=O)(=O)[c-]1cccc1 ZILCTNWIPQCEPU-UHFFFAOYSA-N 0.000 description 2
- ULSLAGLARWXNNF-UHFFFAOYSA-N diazanium;9,10-dioxoanthracene-2,6-disulfonate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)C1=CC=C2C(=O)C3=CC(S(=O)(=O)[O-])=CC=C3C(=O)C2=C1 ULSLAGLARWXNNF-UHFFFAOYSA-N 0.000 description 2
- SIEILFNCEFEENQ-UHFFFAOYSA-N dibromoacetic acid Chemical compound OC(=O)C(Br)Br SIEILFNCEFEENQ-UHFFFAOYSA-N 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- FPIQZBQZKBKLEI-UHFFFAOYSA-N ethyl 1-[[2-chloroethyl(nitroso)carbamoyl]amino]cyclohexane-1-carboxylate Chemical compound ClCCN(N=O)C(=O)NC1(C(=O)OCC)CCCCC1 FPIQZBQZKBKLEI-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- BPMFZUMJYQTVII-UHFFFAOYSA-N guanidinoacetic acid Chemical compound NC(=N)NCC(O)=O BPMFZUMJYQTVII-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 2
- SEOVTRFCIGRIMH-UHFFFAOYSA-N indole-3-acetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CNC2=C1 SEOVTRFCIGRIMH-UHFFFAOYSA-N 0.000 description 2
- LVPMIMZXDYBCDF-UHFFFAOYSA-N isocinchomeronic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)N=C1 LVPMIMZXDYBCDF-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- KHPXUQMNIQBQEV-UHFFFAOYSA-N oxaloacetic acid Chemical compound OC(=O)CC(=O)C(O)=O KHPXUQMNIQBQEV-UHFFFAOYSA-N 0.000 description 2
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- GJAWHXHKYYXBSV-UHFFFAOYSA-N pyridinedicarboxylic acid Natural products OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 2
- NYCVCXMSZNOGDH-UHFFFAOYSA-N pyrrolidine-1-carboxylic acid Chemical compound OC(=O)N1CCCC1 NYCVCXMSZNOGDH-UHFFFAOYSA-N 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- JWHOQZUREKYPBY-UHFFFAOYSA-N rubonic acid Natural products CC1(C)CCC2(CCC3(C)C(=CCC4C5(C)CCC(=O)C(C)(C)C5CC(=O)C34C)C2C1)C(=O)O JWHOQZUREKYPBY-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- UYCAUPASBSROMS-AWQJXPNKSA-M sodium;2,2,2-trifluoroacetate Chemical compound [Na+].[O-][13C](=O)[13C](F)(F)F UYCAUPASBSROMS-AWQJXPNKSA-M 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- WEZYFYMYMKUAHY-UHFFFAOYSA-N tert-butyl 2,4-dibenzylpiperazine-1-carboxylate Chemical compound C1C(CC=2C=CC=CC=2)N(C(=O)OC(C)(C)C)CCN1CC1=CC=CC=C1 WEZYFYMYMKUAHY-UHFFFAOYSA-N 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- QAEDZJGFFMLHHQ-UHFFFAOYSA-N trifluoroacetic anhydride Chemical compound FC(F)(F)C(=O)OC(=O)C(F)(F)F QAEDZJGFFMLHHQ-UHFFFAOYSA-N 0.000 description 2
- SWGJCIMEBVHMTA-UHFFFAOYSA-K trisodium;6-oxido-4-sulfo-5-[(4-sulfonatonaphthalen-1-yl)diazenyl]naphthalene-2-sulfonate Chemical compound [Na+].[Na+].[Na+].C1=CC=C2C(N=NC3=C4C(=CC(=CC4=CC=C3O)S([O-])(=O)=O)S([O-])(=O)=O)=CC=C(S([O-])(=O)=O)C2=C1 SWGJCIMEBVHMTA-UHFFFAOYSA-K 0.000 description 2
- PNVPNXKRAUBJGW-UHFFFAOYSA-N (2-chloroacetyl) 2-chloroacetate Chemical compound ClCC(=O)OC(=O)CCl PNVPNXKRAUBJGW-UHFFFAOYSA-N 0.000 description 1
- RBNSZWOCWHGHMR-UHFFFAOYSA-N (2-iodoacetyl) 2-iodoacetate Chemical compound ICC(=O)OC(=O)CI RBNSZWOCWHGHMR-UHFFFAOYSA-N 0.000 description 1
- FLSKWONBOMQASS-UHFFFAOYSA-N 1,2,3,4-tetrahydroacridine-1-carboxylic acid Chemical compound C1=CC=C2C=C3C(C(=O)O)CCCC3=NC2=C1 FLSKWONBOMQASS-UHFFFAOYSA-N 0.000 description 1
- JSEVRUYWQWSTBH-UHFFFAOYSA-N 1-(2-bromobenzoyl)cyclohexane-1-carboxylic acid Chemical compound BrC1=C(C(=O)C2(CCCCC2)C(=O)O)C=CC=C1 JSEVRUYWQWSTBH-UHFFFAOYSA-N 0.000 description 1
- FGHNDSCESUGGKL-UHFFFAOYSA-N 1-(2-fluorobenzoyl)cyclohexane-1-carboxylic acid Chemical compound FC1=C(C(=O)C2(CCCCC2)C(=O)O)C=CC=C1 FGHNDSCESUGGKL-UHFFFAOYSA-N 0.000 description 1
- ODLLDVJLQPBPPC-UHFFFAOYSA-N 1-(2-fluorophenyl)cyclohexane-1-carboxylic acid Chemical compound C=1C=CC=C(F)C=1C1(C(=O)O)CCCCC1 ODLLDVJLQPBPPC-UHFFFAOYSA-N 0.000 description 1
- AXWFKNJZMNAYGJ-UHFFFAOYSA-N 1-(2-fluorophenyl)cyclopentane-1-carboxylic acid Chemical compound C=1C=CC=C(F)C=1C1(C(=O)O)CCCC1 AXWFKNJZMNAYGJ-UHFFFAOYSA-N 0.000 description 1
- KCMRNPRZCCSZOA-UHFFFAOYSA-N 1-(2-methoxyphenyl)cyclohexane-1-carboxylic acid Chemical compound COC1=CC=CC=C1C1(C(O)=O)CCCCC1 KCMRNPRZCCSZOA-UHFFFAOYSA-N 0.000 description 1
- CWFCTYBNHJXKCV-UHFFFAOYSA-N 1-(2-methoxyphenyl)cyclopentane-1-carboxylic acid Chemical compound COC1=CC=CC=C1C1(C(O)=O)CCCC1 CWFCTYBNHJXKCV-UHFFFAOYSA-N 0.000 description 1
- CZPYUTXQDVNAFL-UHFFFAOYSA-N 1-(2-methoxyphenyl)cyclopropane-1-carboxylic acid Chemical compound COC1=CC=CC=C1C1(C(O)=O)CC1 CZPYUTXQDVNAFL-UHFFFAOYSA-N 0.000 description 1
- VTMYJZKQMMQFCQ-UHFFFAOYSA-N 1-(2-methylphenyl)cyclohexane-1-carboxylic acid Chemical compound CC1=CC=CC=C1C1(C(O)=O)CCCCC1 VTMYJZKQMMQFCQ-UHFFFAOYSA-N 0.000 description 1
- MNCZBOKUHKAUHT-UHFFFAOYSA-N 1-(2-methylphenyl)cyclopropane-1-carboxylic acid Chemical compound CC1=CC=CC=C1C1(C(O)=O)CC1 MNCZBOKUHKAUHT-UHFFFAOYSA-N 0.000 description 1
- YFPMSDHSIDKLLS-UHFFFAOYSA-N 1-(4-methylbenzoyl)cyclohexane-1-carboxylic acid Chemical compound CC1=CC=C(C(=O)C2(CCCCC2)C(=O)O)C=C1 YFPMSDHSIDKLLS-UHFFFAOYSA-N 0.000 description 1
- UAFHRUBCOQPFFM-UHFFFAOYSA-N 1-(aminomethyl)cyclohexane-1-carboxylic acid Chemical compound NCC1(C(O)=O)CCCCC1 UAFHRUBCOQPFFM-UHFFFAOYSA-N 0.000 description 1
- UZRXLKFQBCCVJH-UHFFFAOYSA-N 1-(phenylmethoxycarbonylamino)cyclohexane-1-carboxylic acid Chemical compound C=1C=CC=CC=1COC(=O)NC1(C(=O)O)CCCCC1 UZRXLKFQBCCVJH-UHFFFAOYSA-N 0.000 description 1
- DNUTZBZXLPWRJG-UHFFFAOYSA-N 1-Piperidine carboxylic acid Chemical compound OC(=O)N1CCCCC1 DNUTZBZXLPWRJG-UHFFFAOYSA-N 0.000 description 1
- PGLXXKOXQVJUAT-UHFFFAOYSA-N 1-[(2-methylpropan-2-yl)oxycarbonylamino]-1,2,3,4-tetrahydronaphthalene-2-carboxylic acid Chemical compound C1=CC=C2C(NC(=O)OC(C)(C)C)C(C(O)=O)CCC2=C1 PGLXXKOXQVJUAT-UHFFFAOYSA-N 0.000 description 1
- YBZCSKVLXBOFSL-UHFFFAOYSA-N 1-[(2-methylpropan-2-yl)oxycarbonylamino]cyclopentane-1-carboxylic acid Chemical compound CC(C)(C)OC(=O)NC1(C(O)=O)CCCC1 YBZCSKVLXBOFSL-UHFFFAOYSA-N 0.000 description 1
- WOXWUZCRWJWTRT-UHFFFAOYSA-N 1-amino-1-cyclohexanecarboxylic acid Chemical compound OC(=O)C1(N)CCCCC1 WOXWUZCRWJWTRT-UHFFFAOYSA-N 0.000 description 1
- LXDITXOVGKTHBN-UHFFFAOYSA-N 1-amino-2,3-dihydrophenalene-1-carboxylic acid Chemical compound NC1(CCC2=CC=CC3=CC=CC1=C23)C(=O)O LXDITXOVGKTHBN-UHFFFAOYSA-N 0.000 description 1
- NILQLFBWTXNUOE-UHFFFAOYSA-N 1-aminocyclopentanecarboxylic acid Chemical compound OC(=O)C1(N)CCCC1 NILQLFBWTXNUOE-UHFFFAOYSA-N 0.000 description 1
- PAJPWUMXBYXFCZ-UHFFFAOYSA-N 1-aminocyclopropanecarboxylic acid Chemical compound OC(=O)C1(N)CC1 PAJPWUMXBYXFCZ-UHFFFAOYSA-N 0.000 description 1
- HTTPGMNPPMMMOP-UHFFFAOYSA-N 1-azaniumyl-2,3-dihydroindene-1-carboxylate Chemical compound C1=CC=C2C(N)(C(O)=O)CCC2=C1 HTTPGMNPPMMMOP-UHFFFAOYSA-N 0.000 description 1
- OFFSPAZVIVZPHU-UHFFFAOYSA-N 1-benzofuran-2-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)=CC2=C1 OFFSPAZVIVZPHU-UHFFFAOYSA-N 0.000 description 1
- PNSNAYNBMVRBAM-UHFFFAOYSA-N 1-benzoyl-2-chlorocyclohexane-1-carboxylic acid Chemical compound C1CCC(C(C1)Cl)(C(=O)C2=CC=CC=C2)C(=O)O PNSNAYNBMVRBAM-UHFFFAOYSA-N 0.000 description 1
- HXPVTDPSOSOYCQ-UHFFFAOYSA-N 1-benzoylcyclohexane-1-carboxylic acid Chemical compound C=1C=CC=CC=1C(=O)C1(C(=O)O)CCCCC1 HXPVTDPSOSOYCQ-UHFFFAOYSA-N 0.000 description 1
- SQQBGYGZHHXUPZ-UHFFFAOYSA-N 1-butylcyclohexane-1-carboxylic acid Chemical compound CCCCC1(C(O)=O)CCCCC1 SQQBGYGZHHXUPZ-UHFFFAOYSA-N 0.000 description 1
- SDHXFKBMHSJXHA-UHFFFAOYSA-N 1-carbamoylcyclopropane-1-carboxylic acid Chemical compound NC(=O)C1(C(O)=O)CC1 SDHXFKBMHSJXHA-UHFFFAOYSA-N 0.000 description 1
- KSJJMSKNZVXAND-UHFFFAOYSA-N 1-cyanocyclopropane-1-carboxylic acid Chemical compound OC(=O)C1(C#N)CC1 KSJJMSKNZVXAND-UHFFFAOYSA-N 0.000 description 1
- IDCWXCOATNRGDW-UHFFFAOYSA-N 1-hydroxy-3,4-dihydro-2H-isoquinoline-1-carboxylic acid Chemical compound OC1(NCCC2=CC=CC=C12)C(=O)O IDCWXCOATNRGDW-UHFFFAOYSA-N 0.000 description 1
- GQXURJDNDYACGE-UHFFFAOYSA-N 1-hydroxycyclopropane-1-carboxylic acid Chemical compound OC(=O)C1(O)CC1 GQXURJDNDYACGE-UHFFFAOYSA-N 0.000 description 1
- GFEOZZXITLMAJE-UHFFFAOYSA-N 1-methyl-3,4-dihydro-2h-isoquinoline-1-carboxylic acid Chemical compound C1=CC=C2C(C)(C(O)=O)NCCC2=C1 GFEOZZXITLMAJE-UHFFFAOYSA-N 0.000 description 1
- REHQLKUNRPCYEW-UHFFFAOYSA-N 1-methylcyclohexane-1-carboxylic acid Chemical compound OC(=O)C1(C)CCCCC1 REHQLKUNRPCYEW-UHFFFAOYSA-N 0.000 description 1
- DIZKLZKLNKQFGB-UHFFFAOYSA-N 1-methylcyclopropane-1-carboxylic acid Chemical compound OC(=O)C1(C)CC1 DIZKLZKLNKQFGB-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- ZOSBAYFWABIRBV-UHFFFAOYSA-N 1-pentylcyclohexane-1-carboxylic acid Chemical compound CCCCCC1(C(O)=O)CCCCC1 ZOSBAYFWABIRBV-UHFFFAOYSA-N 0.000 description 1
- QXXHHHWXFHPNOS-UHFFFAOYSA-N 1-phenylcyclohexane-1-carboxylic acid Chemical compound C=1C=CC=CC=1C1(C(=O)O)CCCCC1 QXXHHHWXFHPNOS-UHFFFAOYSA-N 0.000 description 1
- RHPCYZLXNNRRMB-UHFFFAOYSA-N 1-phenylcyclopentane-1-carboxylic acid Chemical compound C=1C=CC=CC=1C1(C(=O)O)CCCC1 RHPCYZLXNNRRMB-UHFFFAOYSA-N 0.000 description 1
- IWWCCNVRNHTGLV-UHFFFAOYSA-N 1-phenylcyclopropane-1-carboxylic acid Chemical compound C=1C=CC=CC=1C1(C(=O)O)CC1 IWWCCNVRNHTGLV-UHFFFAOYSA-N 0.000 description 1
- PZZUNGIHKNESNK-UHFFFAOYSA-N 1-phenylmethoxycarbonyl-3,4-dihydro-2H-isoquinoline-1-carboxylic acid Chemical compound C1CNC(C2=CC=CC=C21)(C(=O)O)C(=O)OCC3=CC=CC=C3 PZZUNGIHKNESNK-UHFFFAOYSA-N 0.000 description 1
- ZVBMXGLAFRTOJS-UHFFFAOYSA-N 1-propylcyclohexane-1-carboxylic acid Chemical compound CCCC1(C(O)=O)CCCCC1 ZVBMXGLAFRTOJS-UHFFFAOYSA-N 0.000 description 1
- ZUUNZDIGHGJBAR-UHFFFAOYSA-N 1h-imidazole-2,5-dicarboxylic acid Chemical compound OC(=O)C1=CNC(C(O)=O)=N1 ZUUNZDIGHGJBAR-UHFFFAOYSA-N 0.000 description 1
- IKTPUTARUKSCDG-UHFFFAOYSA-N 1h-pyrazole-4,5-dicarboxylic acid Chemical compound OC(=O)C=1C=NNC=1C(O)=O IKTPUTARUKSCDG-UHFFFAOYSA-N 0.000 description 1
- ICQPRPLGCDROEV-UHFFFAOYSA-N 2,2,3,3,4,5-hexachlorobicyclo[2.2.1]hept-5-ene-1,6-dicarboxylic acid Chemical compound C1C2(C(O)=O)C(C(=O)O)=C(Cl)C1(Cl)C(Cl)(Cl)C2(Cl)Cl ICQPRPLGCDROEV-UHFFFAOYSA-N 0.000 description 1
- WEUILGLEGSLQSS-UHFFFAOYSA-N 2,2-dichloro-2-(1H-indol-2-yl)acetic acid Chemical compound ClC(C(=O)O)(C=1NC2=CC=CC=C2C1)Cl WEUILGLEGSLQSS-UHFFFAOYSA-N 0.000 description 1
- MENJBAPSEVYSIK-UHFFFAOYSA-N 2,2-dichloro-2-phenylacetic acid Chemical compound OC(=O)C(Cl)(Cl)C1=CC=CC=C1 MENJBAPSEVYSIK-UHFFFAOYSA-N 0.000 description 1
- PFKSLFZFBCIJOI-UHFFFAOYSA-N 2,2-difluoro-2-phenylacetic acid Chemical compound OC(=O)C(F)(F)C1=CC=CC=C1 PFKSLFZFBCIJOI-UHFFFAOYSA-N 0.000 description 1
- PGZVFRAEAAXREB-UHFFFAOYSA-N 2,2-dimethylpropanoyl 2,2-dimethylpropanoate Chemical compound CC(C)(C)C(=O)OC(=O)C(C)(C)C PGZVFRAEAAXREB-UHFFFAOYSA-N 0.000 description 1
- MNBIGEJDAKODJN-UHFFFAOYSA-N 2,3,3-trihydroxycyclohexene-1-carboxylic acid Chemical compound OC(=O)C1=C(O)C(O)(O)CCC1 MNBIGEJDAKODJN-UHFFFAOYSA-N 0.000 description 1
- XGCIVVYTCDKDLC-UHFFFAOYSA-N 2,3,4,9-tetrahydro-1h-pyrido[3,4-b]indol-2-ium-1-carboxylate Chemical compound N1C2=CC=CC=C2C2=C1C(C(=O)O)NCC2 XGCIVVYTCDKDLC-UHFFFAOYSA-N 0.000 description 1
- NVOSSNCFOFICKI-UHFFFAOYSA-N 2,3-dichloro-1-phenylcyclopropane-1-carboxylic acid Chemical compound ClC1C(C1(C(=O)O)C1=CC=CC=C1)Cl NVOSSNCFOFICKI-UHFFFAOYSA-N 0.000 description 1
- TYHYESDUJZRBKS-UHFFFAOYSA-N 2,3-dihydroindole-1-carboxylic acid Chemical compound C1=CC=C2N(C(=O)O)CCC2=C1 TYHYESDUJZRBKS-UHFFFAOYSA-N 0.000 description 1
- NMUCSHYWYUENRY-UHFFFAOYSA-N 2,3-dihydroxy-9,10-dioxoanthracene-1-carboxylic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=C(O)C(O)=C2C(=O)O NMUCSHYWYUENRY-UHFFFAOYSA-N 0.000 description 1
- IKQCSJBQLWJEPU-UHFFFAOYSA-N 2,5-dihydroxybenzenesulfonic acid Chemical compound OC1=CC=C(O)C(S(O)(=O)=O)=C1 IKQCSJBQLWJEPU-UHFFFAOYSA-N 0.000 description 1
- AOTQGWFNFTVXNQ-UHFFFAOYSA-N 2-(1-adamantyl)acetic acid Chemical compound C1C(C2)CC3CC2CC1(CC(=O)O)C3 AOTQGWFNFTVXNQ-UHFFFAOYSA-N 0.000 description 1
- HQLHNHOWMVAWQK-UHFFFAOYSA-N 2-(1-phenylcyclopentyl)acetic acid Chemical compound C=1C=CC=CC=1C1(CC(=O)O)CCCC1 HQLHNHOWMVAWQK-UHFFFAOYSA-N 0.000 description 1
- LGCODSNZJOVMHV-UHFFFAOYSA-N 2-(2,3,4,5,6-pentafluorophenyl)acetic acid Chemical compound OC(=O)CC1=C(F)C(F)=C(F)C(F)=C1F LGCODSNZJOVMHV-UHFFFAOYSA-N 0.000 description 1
- ZMWCKCLDAQWIDA-UHFFFAOYSA-N 2-(2,3,4-trimethoxyphenyl)acetic acid Chemical compound COC1=CC=C(CC(O)=O)C(OC)=C1OC ZMWCKCLDAQWIDA-UHFFFAOYSA-N 0.000 description 1
- YWPABLWXCWUIIT-UHFFFAOYSA-N 2-(2-phenylphenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1C1=CC=CC=C1 YWPABLWXCWUIIT-UHFFFAOYSA-N 0.000 description 1
- NISAHDHKGPWBEM-UHFFFAOYSA-N 2-(4-nonylphenoxy)acetic acid Chemical compound CCCCCCCCCC1=CC=C(OCC(O)=O)C=C1 NISAHDHKGPWBEM-UHFFFAOYSA-N 0.000 description 1
- ABOMWBPECVAWMT-UHFFFAOYSA-N 2-(cyclohepten-1-yl)-7-(phenylmethoxycarbonylamino)cycloheptene-1-carboxylic acid Chemical compound C1CCC=C(CC1)C2=C(C(CCCC2)NC(=O)OCC3=CC=CC=C3)C(=O)O ABOMWBPECVAWMT-UHFFFAOYSA-N 0.000 description 1
- IUAUYZVRWQKQLQ-UHFFFAOYSA-N 2-(difluoromethyl)-4-oxo-3H-pyrido[2,3-h][1,2]benzoxazine-3-carboxylic acid Chemical compound C1=CC2=C(C=CC3=C2ON(C(C3=O)C(=O)O)C(F)F)N=C1 IUAUYZVRWQKQLQ-UHFFFAOYSA-N 0.000 description 1
- IUQFGMCLWBGIIA-UHFFFAOYSA-N 2-(dimethylaminodiazenyl)benzoic acid Chemical compound CN(C)N=NC1=CC=CC=C1C(O)=O IUQFGMCLWBGIIA-UHFFFAOYSA-N 0.000 description 1
- YQPCHPBGAALCRT-UHFFFAOYSA-N 2-[1-(carboxymethyl)cyclohexyl]acetic acid Chemical compound OC(=O)CC1(CC(O)=O)CCCCC1 YQPCHPBGAALCRT-UHFFFAOYSA-N 0.000 description 1
- CEQFOVLGLXCDCX-UHFFFAOYSA-N 2-[[4-(dimethylamino)phenyl]diazenyl]benzoic acid Chemical compound C1=CC(N(C)C)=CC=C1N=NC1=CC=CC=C1C(O)=O CEQFOVLGLXCDCX-UHFFFAOYSA-N 0.000 description 1
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 description 1
- YCZOYWYKPUHPPJ-UHFFFAOYSA-N 2-acetylpiperidine-1-carboxylic acid Chemical compound CC(=O)C1CCCCN1C(O)=O YCZOYWYKPUHPPJ-UHFFFAOYSA-N 0.000 description 1
- ZYZPKAMUWLDAKQ-UHFFFAOYSA-N 2-amino-1-cycloheptylcycloheptane-1-carboxylic acid Chemical compound NC1CCCCCC1(C(O)=O)C1CCCCCC1 ZYZPKAMUWLDAKQ-UHFFFAOYSA-N 0.000 description 1
- UWVIZPHKXRZBEN-UHFFFAOYSA-N 2-amino-2,3-dihydroindene-1,1-dicarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)(C(O)=O)C(N)CC2=C1 UWVIZPHKXRZBEN-UHFFFAOYSA-N 0.000 description 1
- GSKQPNIODMELQM-UHFFFAOYSA-N 2-benzoyl-1-cycloheptylcycloheptane-1-carboxylic acid Chemical compound C1CCCC(CC1)C2(CCCCCC2C(=O)C3=CC=CC=C3)C(=O)O GSKQPNIODMELQM-UHFFFAOYSA-N 0.000 description 1
- RMNKJFCAVGKMLV-UHFFFAOYSA-N 2-benzoyl-1-phenylcyclohexane-1-carboxylic acid Chemical compound C(C1=CC=CC=C1)(=O)C1C(CCCC1)(C(=O)O)C1=CC=CC=C1 RMNKJFCAVGKMLV-UHFFFAOYSA-N 0.000 description 1
- WAKFRZBXTKUFIW-UHFFFAOYSA-N 2-bromo-2-phenylacetic acid Chemical compound OC(=O)C(Br)C1=CC=CC=C1 WAKFRZBXTKUFIW-UHFFFAOYSA-N 0.000 description 1
- YHAPQSMGWPWNOP-UHFFFAOYSA-N 2-chloro-1-phenylcyclobutane-1-carboxylic acid Chemical compound C1CC(C1Cl)(C2=CC=CC=C2)C(=O)O YHAPQSMGWPWNOP-UHFFFAOYSA-N 0.000 description 1
- GUSXKQVBLMWNFV-UHFFFAOYSA-N 2-chloro-1-phenylcyclohexane-1-carboxylic acid Chemical compound C1CCC(C(C1)Cl)(C2=CC=CC=C2)C(=O)O GUSXKQVBLMWNFV-UHFFFAOYSA-N 0.000 description 1
- DPIJYKQYBLASHS-UHFFFAOYSA-N 2-chloro-1-phenylcyclopentane-1-carboxylic acid Chemical compound ClC1C(CCC1)(C(=O)O)C1=CC=CC=C1 DPIJYKQYBLASHS-UHFFFAOYSA-N 0.000 description 1
- KIUDJRRGGUJEBJ-UHFFFAOYSA-N 2-chloro-1-phenylcyclopropane-1-carboxylic acid Chemical compound C=1C=CC=CC=1C1(C(=O)O)CC1Cl KIUDJRRGGUJEBJ-UHFFFAOYSA-N 0.000 description 1
- OAWAZQITIZDJRB-UHFFFAOYSA-N 2-chloro-2,2-difluoroacetic acid Chemical compound OC(=O)C(F)(F)Cl OAWAZQITIZDJRB-UHFFFAOYSA-N 0.000 description 1
- QKSGIGXOKHZCQZ-UHFFFAOYSA-N 2-chloro-2-phenylacetic acid Chemical compound OC(=O)C(Cl)C1=CC=CC=C1 QKSGIGXOKHZCQZ-UHFFFAOYSA-N 0.000 description 1
- AAJLPPDFIRPBDA-UHFFFAOYSA-N 2-cyclohexyl-2-phenylacetic acid Chemical compound C=1C=CC=CC=1C(C(=O)O)C1CCCCC1 AAJLPPDFIRPBDA-UHFFFAOYSA-N 0.000 description 1
- FJIQTPGTRICJON-UHFFFAOYSA-N 2-ethyl-1,3-thiazolidine-2-carboxylic acid Chemical compound CCC1(C(O)=O)NCCS1 FJIQTPGTRICJON-UHFFFAOYSA-N 0.000 description 1
- BPWOBJGGXZJIKR-UHFFFAOYSA-N 2-ethyl-6-phenylbenzoic acid Chemical compound CCC1=CC=CC(C=2C=CC=CC=2)=C1C(O)=O BPWOBJGGXZJIKR-UHFFFAOYSA-N 0.000 description 1
- ATPPNMLQNZHDOG-UHFFFAOYSA-N 2-fluoro-2-phenylacetic acid Chemical compound OC(=O)C(F)C1=CC=CC=C1 ATPPNMLQNZHDOG-UHFFFAOYSA-N 0.000 description 1
- SMNDYUVBFMFKNZ-UHFFFAOYSA-N 2-furoic acid Chemical compound OC(=O)C1=CC=CO1 SMNDYUVBFMFKNZ-UHFFFAOYSA-N 0.000 description 1
- UXWHGEBSCAHINE-UHFFFAOYSA-N 2-hydroxy-2-phenoxyacetic acid Chemical compound OC(=O)C(O)OC1=CC=CC=C1 UXWHGEBSCAHINE-UHFFFAOYSA-N 0.000 description 1
- CJMKSYKFEDJPMM-UHFFFAOYSA-N 2-hydroxy-6-phenylbenzoic acid Chemical compound OC(=O)C1=C(O)C=CC=C1C1=CC=CC=C1 CJMKSYKFEDJPMM-UHFFFAOYSA-N 0.000 description 1
- WBJWXIQDBDZMAW-UHFFFAOYSA-N 2-hydroxynaphthalene-1-carbonyl chloride Chemical compound C1=CC=CC2=C(C(Cl)=O)C(O)=CC=C21 WBJWXIQDBDZMAW-UHFFFAOYSA-N 0.000 description 1
- UPHOPMSGKZNELG-UHFFFAOYSA-N 2-hydroxynaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=C(O)C=CC2=C1 UPHOPMSGKZNELG-UHFFFAOYSA-N 0.000 description 1
- YWWNUFVQQOBOEG-UHFFFAOYSA-N 2-hydroxypyrrolidine-1-carboxylic acid Chemical compound OC1CCCN1C(O)=O YWWNUFVQQOBOEG-UHFFFAOYSA-N 0.000 description 1
- VSLZHFWGCVPVOO-UHFFFAOYSA-N 2-methyl-1,3-thiazolidine-2-carboxylic acid Chemical compound OC(=O)C1(C)NCCS1 VSLZHFWGCVPVOO-UHFFFAOYSA-N 0.000 description 1
- REINNCQGZXZBPU-UHFFFAOYSA-N 2-methylbicyclo[2.2.1]hept-2-ene-3,4-dicarboxylic acid Chemical compound C1CC2C(C)=C(C(O)=O)C1(C(O)=O)C2 REINNCQGZXZBPU-UHFFFAOYSA-N 0.000 description 1
- XEYRUFHPOCIRQC-UHFFFAOYSA-N 2-methylidenecyclopropane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CC1=C XEYRUFHPOCIRQC-UHFFFAOYSA-N 0.000 description 1
- GULMJNUJAVNDBJ-UHFFFAOYSA-N 2-methylpyrrolidine-1-carboxylic acid Chemical compound CC1CCCN1C(O)=O GULMJNUJAVNDBJ-UHFFFAOYSA-N 0.000 description 1
- MFUIRTDVFGAGCV-UHFFFAOYSA-N 2-methylsulfonyl-2-phenylacetic acid Chemical compound CS(=O)(=O)C(C(O)=O)C1=CC=CC=C1 MFUIRTDVFGAGCV-UHFFFAOYSA-N 0.000 description 1
- RZCJYMOBWVJQGV-UHFFFAOYSA-N 2-naphthyloxyacetic acid Chemical compound C1=CC=CC2=CC(OCC(=O)O)=CC=C21 RZCJYMOBWVJQGV-UHFFFAOYSA-N 0.000 description 1
- RSTZWFWKFSUMLH-UHFFFAOYSA-N 2-nitro-2-phenoxyacetic acid Chemical compound OC(=O)C([N+]([O-])=O)OC1=CC=CC=C1 RSTZWFWKFSUMLH-UHFFFAOYSA-N 0.000 description 1
- JYJIMEQNTHFXMT-UHFFFAOYSA-N 2-nitro-2-phenylacetic acid Chemical compound OC(=O)C([N+]([O-])=O)C1=CC=CC=C1 JYJIMEQNTHFXMT-UHFFFAOYSA-N 0.000 description 1
- PQMQIYHBJLVVTD-UHFFFAOYSA-N 2-oxopiperidin-1-ium-1-carboxylate Chemical compound OC(=O)N1CCCCC1=O PQMQIYHBJLVVTD-UHFFFAOYSA-N 0.000 description 1
- WRQBSPHBVXJRRL-UHFFFAOYSA-N 2-phenyl-1,3-thiazolidine-2-carboxylic acid Chemical compound C=1C=CC=CC=1C1(C(=O)O)NCCS1 WRQBSPHBVXJRRL-UHFFFAOYSA-N 0.000 description 1
- VWZWPRIOYCTOLJ-UHFFFAOYSA-N 2-phenyl-6-propylbenzoic acid Chemical compound C(CC)C1=C(C(=CC=C1)C1=CC=CC=C1)C(=O)O VWZWPRIOYCTOLJ-UHFFFAOYSA-N 0.000 description 1
- ILYSAKHOYBPSPC-UHFFFAOYSA-N 2-phenylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C1=CC=CC=C1 ILYSAKHOYBPSPC-UHFFFAOYSA-N 0.000 description 1
- WBKIVUZWGIWQTJ-UHFFFAOYSA-N 2-phenylcyclohexane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCCC1C1=CC=CC=C1 WBKIVUZWGIWQTJ-UHFFFAOYSA-N 0.000 description 1
- KAADYLCSXGRGRX-UHFFFAOYSA-N 2-phenylpyrrolidine-1-carboxylic acid Chemical compound OC(=O)N1CCCC1C1=CC=CC=C1 KAADYLCSXGRGRX-UHFFFAOYSA-N 0.000 description 1
- SMJRBWINMFUUDS-UHFFFAOYSA-N 2-thienylacetic acid Chemical compound OC(=O)CC1=CC=CS1 SMJRBWINMFUUDS-UHFFFAOYSA-N 0.000 description 1
- WMRCTEPOPAZMMN-UHFFFAOYSA-N 2-undecylpropanedioic acid Chemical compound CCCCCCCCCCCC(C(O)=O)C(O)=O WMRCTEPOPAZMMN-UHFFFAOYSA-N 0.000 description 1
- CFFZDZCDUFSOFZ-UHFFFAOYSA-N 3,4-Dihydroxy-phenylacetic acid Chemical compound OC(=O)CC1=CC=C(O)C(O)=C1 CFFZDZCDUFSOFZ-UHFFFAOYSA-N 0.000 description 1
- XQIOBBHIEUGFCI-UHFFFAOYSA-N 3,4-dihydropyrido[1,2-a]pyrimidin-2-one Chemical compound C1=CC=CC2=NC(=O)CCN21 XQIOBBHIEUGFCI-UHFFFAOYSA-N 0.000 description 1
- QOIXLGYJPBDQSK-UHFFFAOYSA-N 3,6-dioxocyclohexa-1,4-diene-1-sulfonic acid Chemical compound OS(=O)(=O)C1=CC(=O)C=CC1=O QOIXLGYJPBDQSK-UHFFFAOYSA-N 0.000 description 1
- GKSFWALDQDWMFD-UHFFFAOYSA-N 3-(chloromethyl)pyridine-2-carboxylic acid Chemical compound OC(=O)C1=NC=CC=C1CCl GKSFWALDQDWMFD-UHFFFAOYSA-N 0.000 description 1
- SKBJYRPOZXOUIG-UHFFFAOYSA-N 3-(hydroxymethyl)pyridine-2-carboxylic acid Chemical compound OCC1=CC=CN=C1C(O)=O SKBJYRPOZXOUIG-UHFFFAOYSA-N 0.000 description 1
- AKQZEHLAEYXYOB-UHFFFAOYSA-N 3-(hydroxymethyl)quinoline-2-carboxylic acid Chemical compound OCC=1C(=NC2=CC=CC=C2C1)C(=O)O AKQZEHLAEYXYOB-UHFFFAOYSA-N 0.000 description 1
- OXTNCQMOKLOUAM-UHFFFAOYSA-N 3-Oxoglutaric acid Chemical compound OC(=O)CC(=O)CC(O)=O OXTNCQMOKLOUAM-UHFFFAOYSA-N 0.000 description 1
- TUYDQQMKXSQIQG-GONBZBRSSA-N 3-[(1e,7e)-8-(2,6-dioxo-1,2,3,6-tetrahydropyrimidin-4-yl)-3,6-dioxa-2,7-diazaocta-1,7-dien-1-yl]benzoic acid Chemical compound OC(=O)C1=CC=CC(\C=N\OCCO\N=C\C=2NC(=O)NC(=O)C=2)=C1 TUYDQQMKXSQIQG-GONBZBRSSA-N 0.000 description 1
- NJZWLEZSGOTSHR-UHFFFAOYSA-N 3-[(2-arsonophenyl)diazenyl]-4,5-dihydroxynaphthalene-2,7-disulfonic acid Chemical compound OC1=C2C(O)=CC(S(O)(=O)=O)=CC2=CC(S(O)(=O)=O)=C1N=NC1=CC=CC=C1[As](O)(O)=O NJZWLEZSGOTSHR-UHFFFAOYSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- HLHNOIAOWQFNGW-UHFFFAOYSA-N 3-bromo-4-hydroxybenzonitrile Chemical compound OC1=CC=C(C#N)C=C1Br HLHNOIAOWQFNGW-UHFFFAOYSA-N 0.000 description 1
- AEGVLBACOVTKAB-UHFFFAOYSA-N 3-butylpyridine-2-carboxylic acid Chemical compound CCCCC1=CC=CN=C1C(O)=O AEGVLBACOVTKAB-UHFFFAOYSA-N 0.000 description 1
- XSNSQNMLYKVIFY-UHFFFAOYSA-N 3-chloro-1-cycloheptyl-2-oxocycloheptane-1-carboxylic acid Chemical compound C1CCCC(CC1)C2(CCCCC(C2=O)Cl)C(=O)O XSNSQNMLYKVIFY-UHFFFAOYSA-N 0.000 description 1
- MVEQAUFZXJDLOP-UHFFFAOYSA-N 3-chloro-1h-indole-2-carboxylic acid Chemical compound C1=CC=C2C(Cl)=C(C(=O)O)NC2=C1 MVEQAUFZXJDLOP-UHFFFAOYSA-N 0.000 description 1
- BXEAAHIHFFIMIE-UHFFFAOYSA-N 3-chlorothiophene-2-carboxylic acid Chemical compound OC(=O)C=1SC=CC=1Cl BXEAAHIHFFIMIE-UHFFFAOYSA-N 0.000 description 1
- AMXMODDEDUGKDR-UHFFFAOYSA-N 3-hydroxy-1h-indole-2-carboxylic acid Chemical compound C1=CC=C2C(O)=C(C(=O)O)NC2=C1 AMXMODDEDUGKDR-UHFFFAOYSA-N 0.000 description 1
- QRIIYOGATDLXFP-UHFFFAOYSA-N 3-hydroxy-2-[(2-hydroxy-4-sulfonaphthalen-1-yl)diazenyl]naphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(=C1)C=C(C(=C2C(=O)O)N=NC3=C(C=C(C4=CC=CC=C43)S(=O)(=O)O)O)O QRIIYOGATDLXFP-UHFFFAOYSA-N 0.000 description 1
- BRARRAHGNDUELT-UHFFFAOYSA-N 3-hydroxypicolinic acid Chemical compound OC(=O)C1=NC=CC=C1O BRARRAHGNDUELT-UHFFFAOYSA-N 0.000 description 1
- WHKZBVQIMVUGIH-UHFFFAOYSA-N 3-hydroxyquinoline-2-carboxylic acid Chemical compound C1=CC=C2C=C(O)C(C(=O)O)=NC2=C1 WHKZBVQIMVUGIH-UHFFFAOYSA-N 0.000 description 1
- YIVHOQIKHMTVRG-UHFFFAOYSA-N 3-methyl-1h-pyrrole-2-carboxylic acid Chemical compound CC=1C=CNC=1C(O)=O YIVHOQIKHMTVRG-UHFFFAOYSA-N 0.000 description 1
- DEDJQZNLAXYJBT-UHFFFAOYSA-N 3-methylpyrazine-2-carboxylic acid Chemical compound CC1=NC=CN=C1C(O)=O DEDJQZNLAXYJBT-UHFFFAOYSA-N 0.000 description 1
- IFLKEBSJTZGCJG-UHFFFAOYSA-N 3-methylthiophene-2-carboxylic acid Chemical compound CC=1C=CSC=1C(O)=O IFLKEBSJTZGCJG-UHFFFAOYSA-N 0.000 description 1
- OUDKEPMYUAFKLL-UHFFFAOYSA-N 3-nitro-1h-indole-2-carboxylic acid Chemical compound C1=CC=C2C([N+]([O-])=O)=C(C(=O)O)NC2=C1 OUDKEPMYUAFKLL-UHFFFAOYSA-N 0.000 description 1
- GVBZLXVDJWWAJT-UHFFFAOYSA-N 3-oxo-2-phenoxypropanoic acid Chemical compound OC(=O)C(C=O)OC1=CC=CC=C1 GVBZLXVDJWWAJT-UHFFFAOYSA-N 0.000 description 1
- BSEPUYZPPQMKOJ-UHFFFAOYSA-N 3-oxo-4H-pyrazino[2,3-a]acridine-2-carboxylic acid Chemical compound C1=CC=C2C(=C1)C=C3C(=N2)C=CC4=C3N=C(C(=O)N4)C(=O)O BSEPUYZPPQMKOJ-UHFFFAOYSA-N 0.000 description 1
- WUXXRMUALOHKBF-UHFFFAOYSA-N 3-oxooxolane-2-carboxylic acid Chemical compound OC(=O)C1OCCC1=O WUXXRMUALOHKBF-UHFFFAOYSA-N 0.000 description 1
- BLKZMYFOKBLJGE-UHFFFAOYSA-N 4,4,5-trimethyl-5H-1,3-thiazole-2-carboxylic acid Chemical compound CC1C(N=C(S1)C(=O)O)(C)C BLKZMYFOKBLJGE-UHFFFAOYSA-N 0.000 description 1
- RHZNQFZHXQJXDH-UHFFFAOYSA-N 4,5-dichloro-3-fluoropyridine-2-carboxylic acid Chemical compound C1=C(C(=C(C(=N1)C(=O)O)F)Cl)Cl RHZNQFZHXQJXDH-UHFFFAOYSA-N 0.000 description 1
- XRBNWBONDUAVJJ-UHFFFAOYSA-N 4,5-dihydroxy-3-[(4-sulfonaphthalen-1-yl)diazenyl]naphthalene-2,7-disulfonic acid Chemical compound OC1=C(C(=CC2=CC(=CC(=C12)O)S(=O)(=O)O)S(=O)(=O)O)N=NC1=CC=C(C2=CC=CC=C12)S(=O)(=O)O XRBNWBONDUAVJJ-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QDSFNOHWQKVVEB-UHFFFAOYSA-N 4-(diethoxyphosphorylmethyl)morpholine Chemical compound CCOP(=O)(OCC)CN1CCOCC1 QDSFNOHWQKVVEB-UHFFFAOYSA-N 0.000 description 1
- SHRRRNSPESGSCM-UHFFFAOYSA-N 4-amino-1h-pyrazole-5-carboxylic acid Chemical compound NC1=CNN=C1C(O)=O SHRRRNSPESGSCM-UHFFFAOYSA-N 0.000 description 1
- KNOATUZABLFQLA-UHFFFAOYSA-N 4-chloro-1-cyclopropyl-2-fluoro-3-oxo-4H-quinoline-2-carboxylic acid Chemical compound C1CC1N2C3=CC=CC=C3C(C(=O)C2(C(=O)O)F)Cl KNOATUZABLFQLA-UHFFFAOYSA-N 0.000 description 1
- TYCRGCVWEVPXJQ-UHFFFAOYSA-N 4-hydroxy-6-oxo-1h-pyrimidine-2-carboxylic acid Chemical compound OC(=O)C1=NC(O)=CC(O)=N1 TYCRGCVWEVPXJQ-UHFFFAOYSA-N 0.000 description 1
- OBQMQANOQQJNFK-UHFFFAOYSA-N 4-methyl-1h-benzimidazole-2-carboxylic acid Chemical compound CC1=CC=CC2=C1N=C(C(O)=O)N2 OBQMQANOQQJNFK-UHFFFAOYSA-N 0.000 description 1
- KMAYSYVNYCZYOR-UHFFFAOYSA-N 4a-bromo-5-cycloheptyl-3,6,7,8,9,9a-hexahydro-2H-cyclohepta[b][1,4]dioxine-5-carboxylic acid Chemical compound C1CCCC(CC1)C2(CCCCC3C2(OCCO3)Br)C(=O)O KMAYSYVNYCZYOR-UHFFFAOYSA-N 0.000 description 1
- LBDZSKZMIQIRPL-UHFFFAOYSA-N 4a-chloro-5-cycloheptyl-3,6,7,8,9,9a-hexahydro-2H-cyclohepta[b][1,4]dioxine-5-carboxylic acid Chemical compound C1CCCC(CC1)C2(CCCCC3C2(OCCO3)Cl)C(=O)O LBDZSKZMIQIRPL-UHFFFAOYSA-N 0.000 description 1
- FAZVMYLYCFJYAC-UHFFFAOYSA-N 5-amino-2h-triazole-4-carboxylic acid Chemical compound NC=1NN=NC=1C(O)=O FAZVMYLYCFJYAC-UHFFFAOYSA-N 0.000 description 1
- ZPVFCEYIRIGPTB-UHFFFAOYSA-N 5-amino-3,4-dimethylpyridine-2-carboxylic acid Chemical compound CC1=C(C(=NC=C1N)C(=O)O)C ZPVFCEYIRIGPTB-UHFFFAOYSA-N 0.000 description 1
- COCNDHOPIHDTHK-UHFFFAOYSA-N 5-methoxyindole-3-acetic acid Chemical compound COC1=CC=C2NC=C(CC(O)=O)C2=C1 COCNDHOPIHDTHK-UHFFFAOYSA-N 0.000 description 1
- ODHCTXKNWHHXJC-VKHMYHEASA-N 5-oxo-L-proline Chemical compound OC(=O)[C@@H]1CCC(=O)N1 ODHCTXKNWHHXJC-VKHMYHEASA-N 0.000 description 1
- ZMWAXVAETNTVAT-UHFFFAOYSA-N 7-n,8-n,5-triphenylphenazin-5-ium-2,3,7,8-tetramine;chloride Chemical compound [Cl-].C=1C=CC=CC=1NC=1C=C2[N+](C=3C=CC=CC=3)=C3C=C(N)C(N)=CC3=NC2=CC=1NC1=CC=CC=C1 ZMWAXVAETNTVAT-UHFFFAOYSA-N 0.000 description 1
- HPVULYKIYNGGJG-UHFFFAOYSA-N 9-methyl-3,4-dihydropyrido[1,2-a]pyrimidin-2-one Chemical compound C1CC(=O)N=C2C(C)=CC=CN21 HPVULYKIYNGGJG-UHFFFAOYSA-N 0.000 description 1
- 229920003026 Acene Polymers 0.000 description 1
- CQPFMGBJSMSXLP-ZAGWXBKKSA-M Acid orange 7 Chemical compound OC1=C(C2=CC=CC=C2C=C1)/N=N/C1=CC=C(C=C1)S(=O)(=O)[O-].[Na+] CQPFMGBJSMSXLP-ZAGWXBKKSA-M 0.000 description 1
- WLDHEUZGFKACJH-ZRUFZDNISA-K Amaranth Chemical compound [Na+].[Na+].[Na+].C12=CC=C(S([O-])(=O)=O)C=C2C=C(S([O-])(=O)=O)C(O)=C1\N=N\C1=CC=C(S([O-])(=O)=O)C2=CC=CC=C12 WLDHEUZGFKACJH-ZRUFZDNISA-K 0.000 description 1
- AOMZHDJXSYHPKS-DROYEMJCSA-L Amido Black 10B Chemical compound [Na+].[Na+].[O-]S(=O)(=O)C1=CC2=CC(S([O-])(=O)=O)=C(\N=N\C=3C=CC=CC=3)C(O)=C2C(N)=C1\N=N\C1=CC=C(N(=O)=O)C=C1 AOMZHDJXSYHPKS-DROYEMJCSA-L 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- RTMBGDBBDQKNNZ-UHFFFAOYSA-L C.I. Acid Blue 3 Chemical compound [Ca+2].C1=CC(N(CC)CC)=CC=C1C(C=1C(=CC(=C(O)C=1)S([O-])(=O)=O)S([O-])(=O)=O)=C1C=CC(=[N+](CC)CC)C=C1.C1=CC(N(CC)CC)=CC=C1C(C=1C(=CC(=C(O)C=1)S([O-])(=O)=O)S([O-])(=O)=O)=C1C=CC(=[N+](CC)CC)C=C1 RTMBGDBBDQKNNZ-UHFFFAOYSA-L 0.000 description 1
- YQYCUAUMXYIYOR-UHFFFAOYSA-N C1(=CC=CC=C1)C1N(CCCC1)C(=O)O.CC1=C(C=CC=C1)S(=O)(=O)O Chemical compound C1(=CC=CC=C1)C1N(CCCC1)C(=O)O.CC1=C(C=CC=C1)S(=O)(=O)O YQYCUAUMXYIYOR-UHFFFAOYSA-N 0.000 description 1
- ZDEOCNJUDBWFAB-UHFFFAOYSA-N C1=CC=C2C(=C1)C(=O)C(=C(N2)C(=O)O)C(F)(F)F Chemical compound C1=CC=C2C(=C1)C(=O)C(=C(N2)C(=O)O)C(F)(F)F ZDEOCNJUDBWFAB-UHFFFAOYSA-N 0.000 description 1
- LWASPIKEKBGASH-UHFFFAOYSA-N CCCCC1=C(C(=CC=C1)C(=[N+]=[N-])C(=O)O)C Chemical compound CCCCC1=C(C(=CC=C1)C(=[N+]=[N-])C(=O)O)C LWASPIKEKBGASH-UHFFFAOYSA-N 0.000 description 1
- DWBHVOSFLPBYNA-UHFFFAOYSA-M CC[N+](CC)(CC)CC.C1=CC(=C(C=C1O)C(=O)O)[O-] Chemical compound CC[N+](CC)(CC)CC.C1=CC(=C(C=C1O)C(=O)O)[O-] DWBHVOSFLPBYNA-UHFFFAOYSA-M 0.000 description 1
- QCEGSGWIBPZLQW-UHFFFAOYSA-M CC[N+](CC)(CC)CC.C1=CC(=O)C2=C(C=CC(=O)C2=C1)S(=O)(=O)[O-] Chemical compound CC[N+](CC)(CC)CC.C1=CC(=O)C2=C(C=CC(=O)C2=C1)S(=O)(=O)[O-] QCEGSGWIBPZLQW-UHFFFAOYSA-M 0.000 description 1
- GZNRCDJNYXPFNM-UHFFFAOYSA-M CC[N+](CC)(CC)CC.C1=CC2=CC(=C(C=C2C(=C1)[O-])O)C(=O)O Chemical group CC[N+](CC)(CC)CC.C1=CC2=CC(=C(C=C2C(=C1)[O-])O)C(=O)O GZNRCDJNYXPFNM-UHFFFAOYSA-M 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- NMEZJSDUZQOPFE-UHFFFAOYSA-N Cyclohex-1-enecarboxylic acid Chemical compound OC(=O)C1=CCCCC1 NMEZJSDUZQOPFE-UHFFFAOYSA-N 0.000 description 1
- DIWVBIXQCNRCFE-UHFFFAOYSA-N DL-alpha-Methoxyphenylacetic acid Chemical compound COC(C(O)=O)C1=CC=CC=C1 DIWVBIXQCNRCFE-UHFFFAOYSA-N 0.000 description 1
- 239000004287 Dehydroacetic acid Substances 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- HMEKVHWROSNWPD-UHFFFAOYSA-N Erioglaucine A Chemical compound [NH4+].[NH4+].C=1C=C(C(=C2C=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C=2C(=CC=CC=2)S([O-])(=O)=O)C=CC=1N(CC)CC1=CC=CC(S([O-])(=O)=O)=C1 HMEKVHWROSNWPD-UHFFFAOYSA-N 0.000 description 1
- MOIJZWWOFOQFMH-UHFFFAOYSA-M Gentisic acid sodium Chemical compound [Na+].OC1=CC=C(O)C(C([O-])=O)=C1 MOIJZWWOFOQFMH-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- HCUARRIEZVDMPT-UHFFFAOYSA-N Indole-2-carboxylic acid Chemical compound C1=CC=C2NC(C(=O)O)=CC2=C1 HCUARRIEZVDMPT-UHFFFAOYSA-N 0.000 description 1
- QOADIMYPCZMZSG-UHFFFAOYSA-N Isodehydracetic acid Chemical compound CC1=CC(=O)OC(C)=C1C(O)=O QOADIMYPCZMZSG-UHFFFAOYSA-N 0.000 description 1
- DZLNHFMRPBPULJ-VKHMYHEASA-N L-thioproline Chemical compound OC(=O)[C@@H]1CSCN1 DZLNHFMRPBPULJ-VKHMYHEASA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000010802 Oxidation-Reduction Activity Effects 0.000 description 1
- SJEYSFABYSGQBG-UHFFFAOYSA-M Patent blue Chemical compound [Na+].C1=CC(N(CC)CC)=CC=C1C(C=1C(=CC(=CC=1)S([O-])(=O)=O)S([O-])(=O)=O)=C1C=CC(=[N+](CC)CC)C=C1 SJEYSFABYSGQBG-UHFFFAOYSA-M 0.000 description 1
- KQHKSGRIBYJYFX-UHFFFAOYSA-J Ponceau S Chemical compound [Na+].[Na+].[Na+].[Na+].Oc1c(cc2cc(ccc2c1N=Nc1ccc(cc1S([O-])(=O)=O)N=Nc1ccc(cc1)S([O-])(=O)=O)S([O-])(=O)=O)S([O-])(=O)=O KQHKSGRIBYJYFX-UHFFFAOYSA-J 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ZHAFUINZIZIXFC-UHFFFAOYSA-N [9-(dimethylamino)-10-methylbenzo[a]phenoxazin-5-ylidene]azanium;chloride Chemical compound [Cl-].O1C2=CC(=[NH2+])C3=CC=CC=C3C2=NC2=C1C=C(N(C)C)C(C)=C2 ZHAFUINZIZIXFC-UHFFFAOYSA-N 0.000 description 1
- JXQBJVZSBALPKQ-ZQNYHYCUSA-N acetic acid (2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanal Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O JXQBJVZSBALPKQ-ZQNYHYCUSA-N 0.000 description 1
- LIXQSGRMEVDRBL-UHFFFAOYSA-N acetic acid;imidazolidine-2,4-dione Chemical compound CC(O)=O.O=C1CNC(=O)N1 LIXQSGRMEVDRBL-UHFFFAOYSA-N 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- MLVYOYVMOZFHIU-ANVLNOONSA-M acid orange 5 Chemical compound [Na+].C1=CC(S(=O)(=O)[O-])=CC=C1\N=N\C(C=C1)=CC=C1NC1=CC=CC=C1 MLVYOYVMOZFHIU-ANVLNOONSA-M 0.000 description 1
- YJVBLROMQZEFPA-UHFFFAOYSA-L acid red 26 Chemical compound [Na+].[Na+].CC1=CC(C)=CC=C1N=NC1=C(O)C(S([O-])(=O)=O)=CC2=CC(S([O-])(=O)=O)=CC=C12 YJVBLROMQZEFPA-UHFFFAOYSA-L 0.000 description 1
- GXEAXHYQKZAJGB-UHFFFAOYSA-L acid red 29 Chemical compound [Na+].[Na+].OC1=C2C(O)=CC(S([O-])(=O)=O)=CC2=CC(S([O-])(=O)=O)=C1N=NC1=CC=CC=C1 GXEAXHYQKZAJGB-UHFFFAOYSA-L 0.000 description 1
- OOGYVVYCCYJADG-UHFFFAOYSA-N acridine-1-carboxylic acid Chemical compound C1=CC=C2C=C3C(C(=O)O)=CC=CC3=NC2=C1 OOGYVVYCCYJADG-UHFFFAOYSA-N 0.000 description 1
- JIMXXGFJRDUSRO-UHFFFAOYSA-N adamantane-1-carboxylic acid Chemical compound C1C(C2)CC3CC2CC1(C(=O)O)C3 JIMXXGFJRDUSRO-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PYHXGXCGESYPCW-UHFFFAOYSA-N alpha-phenylbenzeneacetic acid Natural products C=1C=CC=CC=1C(C(=O)O)C1=CC=CC=C1 PYHXGXCGESYPCW-UHFFFAOYSA-N 0.000 description 1
- ZGUNAGUHMKGQNY-UHFFFAOYSA-N alpha-phenylglycine Chemical compound OC(=O)C(N)C1=CC=CC=C1 ZGUNAGUHMKGQNY-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000012735 amaranth Nutrition 0.000 description 1
- 150000001448 anilines Chemical class 0.000 description 1
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- GIXWDMTZECRIJT-UHFFFAOYSA-N aurintricarboxylic acid Chemical compound C1=CC(=O)C(C(=O)O)=CC1=C(C=1C=C(C(O)=CC=1)C(O)=O)C1=CC=C(O)C(C(O)=O)=C1 GIXWDMTZECRIJT-UHFFFAOYSA-N 0.000 description 1
- WXLFIFHRGFOVCD-UHFFFAOYSA-L azophloxine Chemical compound [Na+].[Na+].OC1=C2C(NC(=O)C)=CC(S([O-])(=O)=O)=CC2=CC(S([O-])(=O)=O)=C1N=NC1=CC=CC=C1 WXLFIFHRGFOVCD-UHFFFAOYSA-L 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229960004365 benzoic acid Drugs 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- IHWUGQBRUYYZNM-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-3,4-dicarboxylic acid Chemical compound C1CC2(C(O)=O)C(C(=O)O)=CC1C2 IHWUGQBRUYYZNM-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 235000012745 brilliant blue FCF Nutrition 0.000 description 1
- 239000004161 brilliant blue FCF Substances 0.000 description 1
- YTIVTFGABIZHHX-UHFFFAOYSA-N butynedioic acid Chemical compound OC(=O)C#CC(O)=O YTIVTFGABIZHHX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- VUHJZBBCZGVNDZ-TTYLFXKOSA-N chlormadinone Chemical compound C1=C(Cl)C2=CC(=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@@](C(=O)C)(O)[C@@]1(C)CC2 VUHJZBBCZGVNDZ-TTYLFXKOSA-N 0.000 description 1
- 229960003996 chlormadinone Drugs 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- ZZBBCSFCMKWYQR-UHFFFAOYSA-N copper;dioxido(oxo)silane Chemical compound [Cu+2].[O-][Si]([O-])=O ZZBBCSFCMKWYQR-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- CCQPAEQGAVNNIA-UHFFFAOYSA-N cyclobutane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCC1 CCQPAEQGAVNNIA-UHFFFAOYSA-N 0.000 description 1
- TXWOGHSRPAYOML-UHFFFAOYSA-N cyclobutanecarboxylic acid Chemical compound OC(=O)C1CCC1 TXWOGHSRPAYOML-UHFFFAOYSA-N 0.000 description 1
- STZIXLPVKZUAMV-UHFFFAOYSA-N cyclopentane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1(C(O)=O)C(O)=O STZIXLPVKZUAMV-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- PGRHXDWITVMQBC-UHFFFAOYSA-N dehydroacetic acid Natural products CC(=O)C1C(=O)OC(C)=CC1=O PGRHXDWITVMQBC-UHFFFAOYSA-N 0.000 description 1
- 229940061632 dehydroacetic acid Drugs 0.000 description 1
- 235000019258 dehydroacetic acid Nutrition 0.000 description 1
- JEQRBTDTEKWZBW-UHFFFAOYSA-N dehydroacetic acid Chemical compound CC(=O)C1=C(O)OC(C)=CC1=O JEQRBTDTEKWZBW-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- HRMOLDWRTCFZRP-UHFFFAOYSA-L disodium 5-acetamido-3-[(4-acetamidophenyl)diazenyl]-4-hydroxynaphthalene-2,7-disulfonate Chemical compound [Na+].OC1=C(C(=CC2=CC(=CC(=C12)NC(C)=O)S(=O)(=O)[O-])S(=O)(=O)[O-])N=NC1=CC=C(C=C1)NC(C)=O.[Na+] HRMOLDWRTCFZRP-UHFFFAOYSA-L 0.000 description 1
- GCUHLYDQBADSHR-UHFFFAOYSA-L disodium 6-[(2-methylphenyl)diazenyl]-4-[(4-methylphenyl)sulfonylamino]-5-oxido-7-sulfonaphthalene-2-sulfonate Chemical compound CC1=CC=C(C=C1)S(=O)(=O)NC2=C3C(=CC(=C2)S(=O)(=O)[O-])C=C(C(=C3[O-])N=NC4=CC=CC=C4C)S(=O)(=O)O.[Na+].[Na+] GCUHLYDQBADSHR-UHFFFAOYSA-L 0.000 description 1
- YCDHVKWTZBVDKD-UHFFFAOYSA-L disodium 6-hydroxy-5-[(4-sulfonatonaphthalen-1-yl)diazenyl]naphthalene-2-sulfonate Chemical compound [Na+].[Na+].C1=CC=C2C(N=NC3=C4C=CC(=CC4=CC=C3O)S([O-])(=O)=O)=CC=C(S([O-])(=O)=O)C2=C1 YCDHVKWTZBVDKD-UHFFFAOYSA-L 0.000 description 1
- YDEXUEFDPVHGHE-GGMCWBHBSA-L disodium;(2r)-3-(2-hydroxy-3-methoxyphenyl)-2-[2-methoxy-4-(3-sulfonatopropyl)phenoxy]propane-1-sulfonate Chemical compound [Na+].[Na+].COC1=CC=CC(C[C@H](CS([O-])(=O)=O)OC=2C(=CC(CCCS([O-])(=O)=O)=CC=2)OC)=C1O YDEXUEFDPVHGHE-GGMCWBHBSA-L 0.000 description 1
- FTZLWXQKVFFWLY-UHFFFAOYSA-L disodium;2,5-dichloro-4-[3-methyl-5-oxo-4-[(4-sulfonatophenyl)diazenyl]-4h-pyrazol-1-yl]benzenesulfonate Chemical compound [Na+].[Na+].CC1=NN(C=2C(=CC(=C(Cl)C=2)S([O-])(=O)=O)Cl)C(=O)C1N=NC1=CC=C(S([O-])(=O)=O)C=C1 FTZLWXQKVFFWLY-UHFFFAOYSA-L 0.000 description 1
- UTIACSXEVKXHPT-YIDQSHOPSA-L disodium;4-[(2z)-2-[(5z)-4,6-dioxo-5-[(4-sulfonatonaphthalen-1-yl)hydrazinylidene]cyclohex-2-en-1-ylidene]hydrazinyl]naphthalene-1-sulfonate Chemical compound [Na+].[Na+].C12=CC=CC=C2C(S(=O)(=O)[O-])=CC=C1N\N=C(\C=CC\1=O)C(=O)C/1=N\NC1=CC=C(S([O-])(=O)=O)C2=CC=CC=C12 UTIACSXEVKXHPT-YIDQSHOPSA-L 0.000 description 1
- FBNCDTLHQPLASV-UHFFFAOYSA-L disodium;5-methyl-2-[[5-(4-methyl-2-sulfonatoanilino)-9,10-dioxoanthracen-1-yl]amino]benzenesulfonate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)C1=CC(C)=CC=C1NC1=CC=CC2=C1C(=O)C1=CC=CC(NC=3C(=CC(C)=CC=3)S([O-])(=O)=O)=C1C2=O FBNCDTLHQPLASV-UHFFFAOYSA-L 0.000 description 1
- 239000012799 electrically-conductive coating Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- SEACYXSIPDVVMV-UHFFFAOYSA-L eosin Y Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC=C1C1=C2C=C(Br)C(=O)C(Br)=C2OC2=C(Br)C([O-])=C(Br)C=C21 SEACYXSIPDVVMV-UHFFFAOYSA-L 0.000 description 1
- QGAYMQGSQUXCQO-UHFFFAOYSA-L eosin b Chemical compound [Na+].[Na+].O1C(=O)C2=CC=CC=C2C21C1=CC([N+]([O-])=O)=C([O-])C(Br)=C1OC1=C2C=C([N+]([O-])=O)C([O-])=C1Br QGAYMQGSQUXCQO-UHFFFAOYSA-L 0.000 description 1
- DUYAAUVXQSMXQP-UHFFFAOYSA-N ethanethioic S-acid Chemical compound CC(S)=O DUYAAUVXQSMXQP-UHFFFAOYSA-N 0.000 description 1
- IUYXNKJMEZSVRB-UHFFFAOYSA-N ethyl 3-(chloromethyl)furan-2-carboxylate Chemical compound C(C)OC(=O)C=1OC=CC1CCl IUYXNKJMEZSVRB-UHFFFAOYSA-N 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 235000019439 ethyl acetate Nutrition 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N ethyl formate Chemical compound CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229960000192 felbinac Drugs 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- 229960004275 glycolic acid Drugs 0.000 description 1
- 235000012701 green S Nutrition 0.000 description 1
- WDPIZEKLJKBSOZ-UHFFFAOYSA-M green s Chemical compound [Na+].C1=CC(N(C)C)=CC=C1C(C=1C2=CC=C(C=C2C=C(C=1O)S([O-])(=O)=O)S([O-])(=O)=O)=C1C=CC(=[N+](C)C)C=C1 WDPIZEKLJKBSOZ-UHFFFAOYSA-M 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- IGMNYECMUMZDDF-UHFFFAOYSA-N homogentisic acid Chemical compound OC(=O)CC1=CC(O)=CC=C1O IGMNYECMUMZDDF-UHFFFAOYSA-N 0.000 description 1
- YPGCWEMNNLXISK-UHFFFAOYSA-N hydratropic acid Chemical compound OC(=O)C(C)C1=CC=CC=C1 YPGCWEMNNLXISK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- KHLVKKOJDHCJMG-QDBORUFSSA-L indigo carmine Chemical compound [Na+].[Na+].N/1C2=CC=C(S([O-])(=O)=O)C=C2C(=O)C\1=C1/NC2=CC=C(S(=O)(=O)[O-])C=C2C1=O KHLVKKOJDHCJMG-QDBORUFSSA-L 0.000 description 1
- 239000003617 indole-3-acetic acid Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- JDNTWHVOXJZDSN-UHFFFAOYSA-N iodoacetic acid Chemical compound OC(=O)CI JDNTWHVOXJZDSN-UHFFFAOYSA-N 0.000 description 1
- XAAKCCMYRKZRAK-UHFFFAOYSA-N isoquinoline-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=NC=CC2=C1 XAAKCCMYRKZRAK-UHFFFAOYSA-N 0.000 description 1
- SXQCTESRRZBPHJ-UHFFFAOYSA-M lissamine rhodamine Chemical compound [Na+].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=C(S([O-])(=O)=O)C=C1S([O-])(=O)=O SXQCTESRRZBPHJ-UHFFFAOYSA-M 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- RMIODHQZRUFFFF-UHFFFAOYSA-N methoxyacetic acid Chemical compound COCC(O)=O RMIODHQZRUFFFF-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- JMXROTHPANUTOJ-UHFFFAOYSA-H naphthol green b Chemical compound [Na+].[Na+].[Na+].[Fe+3].C1=C(S([O-])(=O)=O)C=CC2=C(N=O)C([O-])=CC=C21.C1=C(S([O-])(=O)=O)C=CC2=C(N=O)C([O-])=CC=C21.C1=C(S([O-])(=O)=O)C=CC2=C(N=O)C([O-])=CC=C21 JMXROTHPANUTOJ-UHFFFAOYSA-H 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- UFOIOXZLTXNHQH-UHFFFAOYSA-N oxolane-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1OC(C(O)=O)C(C(O)=O)C1C(O)=O UFOIOXZLTXNHQH-UHFFFAOYSA-N 0.000 description 1
- 235000012736 patent blue V Nutrition 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- GVKCHTBDSMQENH-UHFFFAOYSA-L phloxine B Chemical compound [Na+].[Na+].[O-]C(=O)C1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1C1=C2C=C(Br)C(=O)C(Br)=C2OC2=C(Br)C([O-])=C(Br)C=C21 GVKCHTBDSMQENH-UHFFFAOYSA-L 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- RFIOZSIHFNEKFF-UHFFFAOYSA-N piperazine-1-carboxylic acid Chemical compound OC(=O)N1CCNCC1 RFIOZSIHFNEKFF-UHFFFAOYSA-N 0.000 description 1
- IUGYQRQAERSCNH-UHFFFAOYSA-N pivalic acid Chemical compound CC(C)(C)C(O)=O IUGYQRQAERSCNH-UHFFFAOYSA-N 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- ZUCRGHABDDWQPY-UHFFFAOYSA-N pyrazine-2,3-dicarboxylic acid Chemical compound OC(=O)C1=NC=CN=C1C(O)=O ZUCRGHABDDWQPY-UHFFFAOYSA-N 0.000 description 1
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 1
- NIPZZXUFJPQHNH-UHFFFAOYSA-N pyrazine-2-carboxylic acid Chemical compound OC(=O)C1=CN=CC=N1 NIPZZXUFJPQHNH-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229940079889 pyrrolidonecarboxylic acid Drugs 0.000 description 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 description 1
- 235000012752 quinoline yellow Nutrition 0.000 description 1
- FZUOVNMHEAPVBW-UHFFFAOYSA-L quinoline yellow ws Chemical compound [Na+].[Na+].O=C1C2=CC=CC=C2C(=O)C1C1=NC2=C(S([O-])(=O)=O)C=C(S(=O)(=O)[O-])C=C2C=C1 FZUOVNMHEAPVBW-UHFFFAOYSA-L 0.000 description 1
- UPUZGXILYFKSGE-UHFFFAOYSA-N quinoxaline-2-carboxylic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CN=C21 UPUZGXILYFKSGE-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000012739 red 2G Nutrition 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- AZJPTIGZZTZIDR-UHFFFAOYSA-L rose bengal Chemical compound [K+].[K+].[O-]C(=O)C1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1C1=C2C=C(I)C(=O)C(I)=C2OC2=C(I)C([O-])=C(I)C=C21 AZJPTIGZZTZIDR-UHFFFAOYSA-L 0.000 description 1
- 229960003138 rose bengal sodium Drugs 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 1
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- LGZQSRCLLIPAEE-UHFFFAOYSA-M sodium 1-[(4-sulfonaphthalen-1-yl)diazenyl]naphthalen-2-olate Chemical compound [Na+].C1=CC=C2C(N=NC3=C4C=CC=CC4=CC=C3O)=CC=C(S([O-])(=O)=O)C2=C1 LGZQSRCLLIPAEE-UHFFFAOYSA-M 0.000 description 1
- COEZWFYORILMOM-UHFFFAOYSA-M sodium 4-[(2,4-dihydroxyphenyl)diazenyl]benzenesulfonate Chemical compound [Na+].OC1=CC(O)=CC=C1N=NC1=CC=C(S([O-])(=O)=O)C=C1 COEZWFYORILMOM-UHFFFAOYSA-M 0.000 description 1
- AZLXCBPKSXFMET-UHFFFAOYSA-M sodium 4-[(4-sulfophenyl)diazenyl]naphthalen-1-olate Chemical compound [Na+].C12=CC=CC=C2C(O)=CC=C1N=NC1=CC=C(S([O-])(=O)=O)C=C1 AZLXCBPKSXFMET-UHFFFAOYSA-M 0.000 description 1
- QTNPMIVHCISUCN-UHFFFAOYSA-M sodium 5-[(3,5-dimethylphenyl)diazenyl]-6-hydroxynaphthalene-2-sulfonate Chemical compound CC=1C=C(C=C(C=1)C)N=NC1=C(C=CC2=CC(=CC=C12)S(=O)(=O)[O-])O.[Na+] QTNPMIVHCISUCN-UHFFFAOYSA-M 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- PUIBHZWIHWXAKQ-UHFFFAOYSA-M sodium;2-[4-[(1-anilino-1,3-dioxobutan-2-yl)diazenyl]phenyl]-6-methyl-1,3-benzothiazole-7-sulfonate Chemical compound [Na+].C=1C=C(C=2SC3=C(C(C)=CC=C3N=2)S([O-])(=O)=O)C=CC=1N=NC(C(=O)C)C(=O)NC1=CC=CC=C1 PUIBHZWIHWXAKQ-UHFFFAOYSA-M 0.000 description 1
- BPCZPTGXEYXQRS-UHFFFAOYSA-M sodium;2-[4-[bis(4-anilinophenyl)-hydroxymethyl]anilino]benzenesulfonate Chemical compound [Na+].C=1C=C(NC=2C=CC=CC=2)C=CC=1C(C=1C=CC(NC=2C(=CC=CC=2)S([O-])(=O)=O)=CC=1)(O)C(C=C1)=CC=C1NC1=CC=CC=C1 BPCZPTGXEYXQRS-UHFFFAOYSA-M 0.000 description 1
- SHBDDIJUSNNBLQ-UHFFFAOYSA-M sodium;3-[[4-[(2-chlorophenyl)-[4-[ethyl-[(3-sulfonatophenyl)methyl]azaniumylidene]cyclohexa-2,5-dien-1-ylidene]methyl]-n-ethylanilino]methyl]benzenesulfonate Chemical compound [Na+].C=1C=C(C(=C2C=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C=2C(=CC=CC=2)Cl)C=CC=1N(CC)CC1=CC=CC(S([O-])(=O)=O)=C1 SHBDDIJUSNNBLQ-UHFFFAOYSA-M 0.000 description 1
- UWGCNDBLFSEBDW-UHFFFAOYSA-M sodium;4-[[4-(diethylamino)phenyl]-(4-diethylazaniumylidenecyclohexa-2,5-dien-1-ylidene)methyl]naphthalene-2,7-disulfonate Chemical compound [Na+].C1=CC(N(CC)CC)=CC=C1C(C=1C2=CC=C(C=C2C=C(C=1)S([O-])(=O)=O)S([O-])(=O)=O)=C1C=CC(=[N+](CC)CC)C=C1 UWGCNDBLFSEBDW-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- AGGIJOLULBJGTQ-UHFFFAOYSA-N sulfoacetic acid Chemical compound OC(=O)CS(O)(=O)=O AGGIJOLULBJGTQ-UHFFFAOYSA-N 0.000 description 1
- 235000012756 tartrazine Nutrition 0.000 description 1
- UJMBCXLDXJUMFB-GLCFPVLVSA-K tartrazine Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)C1=NN(C=2C=CC(=CC=2)S([O-])(=O)=O)C(=O)C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 UJMBCXLDXJUMFB-GLCFPVLVSA-K 0.000 description 1
- 239000004149 tartrazine Substances 0.000 description 1
- DNSTUAQHBFISRZ-UHFFFAOYSA-N tert-butyl n-cyclohexylcarbamate Chemical compound CC(C)(C)OC(=O)NC1CCCCC1 DNSTUAQHBFISRZ-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- PUZYNDBTWXJXKN-UHFFFAOYSA-M tetraethylazanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CC[N+](CC)(CC)CC PUZYNDBTWXJXKN-UHFFFAOYSA-M 0.000 description 1
- FCMRBZBGGXLKBC-UHFFFAOYSA-J tetrasodium 2-[[1,8-dioxido-3,6-disulfo-7-[(2-sulfonatophenyl)diazenyl]naphthalen-2-yl]diazenyl]benzenesulfonate Chemical compound [Na+].[Na+].[Na+].[Na+].Oc1c(N=Nc2ccccc2S([O-])(=O)=O)c(cc2cc(c(N=Nc3ccccc3S([O-])(=O)=O)c(O)c12)S([O-])(=O)=O)S([O-])(=O)=O FCMRBZBGGXLKBC-UHFFFAOYSA-J 0.000 description 1
- QERYCTSHXKAMIS-UHFFFAOYSA-N thiophene-2-carboxylic acid Chemical compound OC(=O)C1=CC=CS1 QERYCTSHXKAMIS-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- 229960004319 trichloroacetic acid Drugs 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- ZXYAAVBXHKCJJB-UHFFFAOYSA-N uracil-5-carboxylic acid Chemical compound OC(=O)C1=CNC(=O)NC1=O ZXYAAVBXHKCJJB-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Non-Insulated Conductors (AREA)
- Fuel Cell (AREA)
Description
本発明は、電気抵抗が非常に低い銅又はその合金に防食層かつ導電層として機能する導電性高分子層が形成された耐食性導電被覆材料及びその製造方法に関するものであり、特に酸性雰囲気下やハロゲン化物溶液など金属が腐食し易い環境で、長期に渡って優れた防食性及び導電性を発揮する耐食性導電被覆材及びその製造方法に関するものである。 The present invention relates to a corrosion-resistant conductive coating material in which a conductive polymer layer that functions as an anticorrosion layer and a conductive layer is formed on copper or an alloy thereof having a very low electric resistance, and a method for producing the same. The present invention relates to a corrosion-resistant conductive coating material that exhibits excellent corrosion resistance and conductivity over a long period of time in an environment in which a metal is easily corroded, such as a halide solution, and a method for producing the same.
銅は他の金属に比べ電気抵抗が非常に低いために、配線材料又は集電材料として幅広く用いられている。しかし、腐食し易いために、一般的には腐食環境下では、例えば、ポリビニール被覆された電線コードなどの防食加工した上で使用されている。現在、銅など金属基体の主な防食方法としては、有機材料または無機材料により表面を被覆する方法、金属が腐食し易い環境下においてベンゾトリアゾールなどの腐食抑制剤を浴液中に添加する方法、電気化学的に腐食電流を抑える電気防食法などが挙げられる。 Copper has been widely used as a wiring material or a current collecting material because of its very low electrical resistance compared to other metals. However, since it tends to corrode, it is generally used in a corrosive environment, for example, after being subjected to anticorrosion processing such as a wire cord coated with polyvinyl. Currently, as the main anticorrosion methods for metal substrates such as copper, a method of coating the surface with an organic material or an inorganic material, a method of adding a corrosion inhibitor such as benzotriazole to the bath liquid in an environment where the metal is easily corroded, Examples include an electrochemical protection method that electrochemically suppresses the corrosion current.
ところで、配線材料や集電材料等の用途の場合、防食性だけではなく電気伝導性をも求められる。具体例を挙げれば、金属薄板やフレキシブルプリント基板の連続めっき装置で用いられる給電用ロール、小型電源として期待されている固体高分子形燃料電池のセパレータなどである。それらの用途に適した従来の材料はめっきなどによる貴金属被覆材料あるいは導電性塗料を塗膜された材料が挙げられる。 By the way, in the case of applications such as wiring materials and current collecting materials, not only anticorrosion properties but also electrical conductivity are required. Specific examples include power supply rolls used in continuous plating apparatuses for thin metal plates and flexible printed boards, and separators for polymer electrolyte fuel cells that are expected as compact power sources. Conventional materials suitable for these applications include noble metal coating materials by plating or materials coated with a conductive paint.
しかし、貴金属材料は非常に高価のため、厚めっきは困難である。コストを下げるために、薄めっきを行った場合、ピンホール等のめっき欠陥によって、局部電池が形成され腐食が進行するなどの問題があり、信頼性にも劣っている。また、貴金属めっき浴は有害なシアン化合物などが含まれており、環境負荷が高いことも問題となっている。さらに、金属セパレータ等のような凹凸が多く複雑な形状の基体には、均一に導電性塗料を塗布することが困難である。 However, since noble metal materials are very expensive, thick plating is difficult. When thin plating is performed in order to reduce costs, there is a problem that local batteries are formed due to plating defects such as pinholes and corrosion progresses, and the reliability is also poor. In addition, the noble metal plating bath contains harmful cyanide and the like, and has a problem of high environmental load. Furthermore, it is difficult to uniformly apply a conductive paint to a substrate having many irregularities such as a metal separator and having a complicated shape.
これらの問題に対して、様々な方法が提案されている。特許文献1では、金属基体上に、上側の層をより卑なNi層となるように、電極電位が異なるNiめっき層を2層設け、さらにAuめっきを最上層に形成することによって、ピンホールに起因する孔食を防止し、金属基体の寿命を向上させる方法が開示されている。また、特許文献2では、導電性塗料を電着塗装により均一に形成する技術が開示されている。
Various methods have been proposed for these problems. In
特許文献1は、下地金属に2つのNi層と金めっき層とを有するものであり、金めっき層のピンホールと卑な電極電位であるNiめっき層によって局部電池が形成されるために、卑なNiめっき層は溶解するが、この自己犠牲によって貴なNiめっき層と金属基体を保護する機構を利用したものである。該電極電位の低いNiめっき層は腐食が進行し続けるため、最終的には該Niめっき層の消失に伴い、その効果も消え耐久性に問題がある。また、特許文献2は、導電性粉末を塗膜形成用必須成分として含有する電着塗料組成物を用いたものであり、導電性粉末として炭化タングステン粉末などが用いられており、これらの粉末は非常に高価であるという問題がある。また、電着塗料組成物は絶縁性樹脂成分が多く含有されるために、高い電気伝導性を達成することが困難である。
これらの問題を克服するために、防食性と導電性を兼ね備え、低コストで均一な被覆膜が形成できる方法として、金属基体に電解重合によって導電性高分子を被覆する方法がある。特許文献3によれば、金属基体表面を特定の方法にて処理後、導電性高分子の原料であるモノマーおよびカルボン酸アニオンを含有する電解液中で電解重合することによって、密着性に優れ、均一な第一導電性高分子層を形成し、さらに該第一層上にドーパント化合物を特定の化合物とし緻密な第二導電性高分子層を形成させることで、金属基体上に密着性、防食性、導電性に優れた耐食性導電被覆材料を提供する方法が開示されている。 In order to overcome these problems, there is a method in which a metal coating is coated with a conductive polymer by electrolytic polymerization as a method capable of forming a uniform coating film at a low cost, having both anticorrosion and conductivity. According to Patent Document 3, the surface of the metal substrate is treated by a specific method, and then electropolymerized in an electrolytic solution containing a monomer that is a raw material for the conductive polymer and a carboxylic acid anion. A uniform first conductive polymer layer is formed, and a dense second conductive polymer layer is formed on the first layer by using a specific compound as a dopant compound. A method for providing a corrosion-resistant conductive coating material having excellent properties and conductivity is disclosed.
しかし、特許文献3の方法では、金属基体表面を前記特定の方法による処理する第一工程、第一導電性高分子層を形成する第二工程及び第二導電性高分子層を形成する第三工程の計三工程が必要であり、生産性に劣る問題点があった。さらに、特許文献2に比べて電気伝導性は高いものの、第一工程で形成する酸化被膜、第二工程で形成される伝導度に劣るカルボン酸アニオンがドープされた導電性高分子層は抵抗成分として働くため、貴金属めっき法に比べるとまだ導電性が低いという課題がある。 However, in the method of Patent Document 3, the first step of treating the metal substrate surface by the specific method, the second step of forming the first conductive polymer layer, and the third step of forming the second conductive polymer layer. A total of three processes were required, and there was a problem inferior in productivity. Furthermore, although the electrical conductivity is higher than that of Patent Document 2, the conductive polymer layer doped with a carboxylate anion inferior in conductivity formed in the oxide layer formed in the first step and in the second step is a resistance component. Therefore, there is a problem that the conductivity is still low as compared with the noble metal plating method.
さらに、銅またはその合金基体上に導電性高分子を電解重合により成膜する場合、銅の溶解反応電位は電解重合電位に比べて非常に卑であるため、一般的な電解重合液を用い、銅基体を陽極にして電解重合成膜を行う従来の方法では、銅基体の溶解反応が優先的に起こるために、該導電性高分子膜の形成は困難であり、銅又はその合金上に密着性、導電性および耐食性に優れた導電性高分子層を形成する方法に関しては改良の余地が残されていた。 Furthermore, when a conductive polymer film is formed on a copper or its alloy substrate by electrolytic polymerization, since the dissolution reaction potential of copper is very low compared to the electrolytic polymerization potential, a general electrolytic polymerization solution is used. In the conventional method in which electrolytic polymerization film formation is performed using a copper substrate as an anode, the dissolution reaction of the copper substrate occurs preferentially, so that the formation of the conductive polymer film is difficult, and the copper polymer or its alloy adheres closely. There remains room for improvement with respect to a method for forming a conductive polymer layer having excellent properties, conductivity and corrosion resistance.
本発明の目的は、安価な銅に導電性高分子層が被覆された導電性高分子被覆材において、酸性雰囲気やハロゲン化物溶液など銅が腐食し易い環境で使用しても、銅がもつ良好な電気伝導特性を損なうことなく、溶解や絶縁被膜生成を抑制でき、長期的な使用に耐える導電性高分子被覆材料及びその製造方法を提供することである。また、そのような防食性、導電性に優れる被覆材料を得る際に好適に用いることができ、銅基体との密着性に優れ、均一な導電性高分子を被覆することができる被覆方法を提供することである。 It is an object of the present invention to provide a conductive polymer coating material in which a conductive polymer layer is coated on inexpensive copper, even if it is used in an environment where copper is easily corroded, such as in an acidic atmosphere or a halide solution, It is an object to provide a conductive polymer coating material that can suppress dissolution and generation of an insulating film without impairing electrical conductivity and that can withstand long-term use, and a method for manufacturing the same. In addition, it provides a coating method that can be suitably used in obtaining such a coating material having excellent anticorrosion and electrical conductivity, and can be coated with a uniform conductive polymer with excellent adhesion to a copper substrate. It is to be.
本発明者らは、銅又はその合金からなる基体に導電性高分子を被覆する方法について鋭意研究を進めた結果、電解重合法により導電性高分子を形成する際、電解重合液中に複数のドーパントを含有させ、該ドーパント濃度比を適切に選択することによって、特別な基体処理をすることなく、電解重合法を用いて緻密で密着性の高い導電性高分子膜を極めて簡便に形成できることを見出した。また、そのような方法によって得られる導電性高分子被覆材は、銅基体が持つ良好な電気伝導特性を損なわず導電性に優れ、長期的な防食性を持つことを見出し、本発明を完成するに至った。 As a result of diligent research on a method for coating a conductive polymer on a substrate made of copper or an alloy thereof, the present inventors have found that when forming a conductive polymer by an electrolytic polymerization method, a plurality of electrolytic polymerization solutions are used. By containing a dopant and appropriately selecting the dopant concentration ratio, it is possible to form a highly conductive polymer film with high adhesion using an electrolytic polymerization method without any special substrate treatment. I found it. Further, the conductive polymer coating material obtained by such a method has been found to have excellent conductivity and long-term corrosion resistance without impairing the good electrical conductivity characteristics of the copper substrate, and completes the present invention. It came to.
すなわち本発明は以下(1)に示したものである。 That is, the present invention is as shown in (1) below.
(1):導電性高分子モノマーとカルボン酸アニオンとスルホン酸アニオンとを含有し、カルボン酸アニオンがスルホン酸アニオンに対して0.15〜0.75の濃度比(モル比)に調製された電解液を用い、電解重合することによって導電性高分子層を銅又はその合金からなる基体上に形成することを特徴とする耐食性導電被覆材料の製造方法。 ( 1 ): Containing a conductive polymer monomer, a carboxylic acid anion, and a sulfonic acid anion, and the carboxylic acid anion was prepared at a concentration ratio (molar ratio) of 0.15 to 0.75 with respect to the sulfonic acid anion. A method for producing a corrosion-resistant conductive coating material, wherein an electroconductive polymer layer is formed on a substrate made of copper or an alloy thereof by electrolytic polymerization using an electrolytic solution.
導電性高分子モノマーと、カルボン酸アニオン及びスルホン酸アニオンを含有しており、カルボン酸アニオン濃度が前記特定の割合に調整された電解液中で電解重合することによって、銅基体に対してより高い密着性を発現でき、かつ緻密な導電性高分子層を簡便に成膜することが可能となる。さらに、スルホン酸アニオンを前記特定の化合物とすることで、より緻密な導電性高分子層が形成でき、該導電性高分子は高導電性であり、腐食性液体中などの環境下においても基体を保護するバリアー膜として有効に働く。また、該スルホン酸アニオンとして電気化学的に可逆である酸化還元活性を示す化合物を用いることで、被覆材の電極電位を環境下に合わせて制御することができ、金属防食効果が飛躍的に向上する。また、高価な貴金属を使用することなく、導電性と防食性を兼ね備えた被覆材を形成することができる。 It contains a conductive polymer monomer, a carboxylic acid anion and a sulfonic acid anion, and is higher than the copper substrate by electrolytic polymerization in an electrolytic solution in which the carboxylic acid anion concentration is adjusted to the specific ratio. It becomes possible to easily form a dense conductive polymer layer that can express adhesiveness. Furthermore, by using the sulfonate anion as the specific compound, a denser conductive polymer layer can be formed, and the conductive polymer is highly conductive and can be used in an environment such as a corrosive liquid. It works effectively as a barrier film that protects. In addition, by using a compound that exhibits redox activity that is electrochemically reversible as the sulfonate anion, the electrode potential of the coating material can be controlled in accordance with the environment, and the metal anticorrosion effect is dramatically improved. To do. In addition, a coating material having both conductivity and corrosion resistance can be formed without using an expensive noble metal.
本発明の導電性高分子被覆材について説明する。基体としては、銅又はその合金の他、亜鉛、錫、アルミニウムおよびこれらの合金が挙げられるが、生産性や電気伝導度の観点から銅およびその合金を用いるのが好ましい。銅などの金属基体は安価で導電性に非常に優れるが、銅基体上に導電性高分子を電解重合により成膜する場合、銅の溶解反応電位は電解重合電位に比べて非常に卑である。そのため、一般的な電解重合液を用い、銅基体を陽極にして電解重合成膜を行う従来の方法では、銅基体の溶解反応が優先的に起こるために、該導電性高分子膜の形成は困難である。そのため、銅基体上でも導電性高分子が析出する環境を作り出す必要がある。 The conductive polymer coating material of the present invention will be described. Examples of the substrate include copper, alloys thereof, zinc, tin, aluminum, and alloys thereof, and copper and alloys thereof are preferably used from the viewpoint of productivity and electrical conductivity. Metal bases such as copper are inexpensive and have excellent electrical conductivity. However, when a conductive polymer is formed on a copper base by electrolytic polymerization, the dissolution reaction potential of copper is very low compared to the electrolytic polymerization potential. . Therefore, in the conventional method of performing electrolytic polymerization film formation using a general electrolytic polymerization solution and using a copper substrate as an anode, the dissolution reaction of the copper substrate occurs preferentially. Have difficulty. Therefore, it is necessary to create an environment in which the conductive polymer is deposited even on the copper substrate.
銅基体上でも導電性高分子が析出する環境として、電気導電性を保ちながら耐食性が銅基体よりも増す表面処理法を用いても良い。該方法として酸化被膜処理が挙げられ、耐食性が特に求められる場合には有効であるが、導電性を重視する場合には、この処理を施さなくても良い。導電性を有する該酸化被膜の形成法としては従来周知の方法が利用でき、例えば、熱処理法、酸化性ガス暴露法、アルカリ液処理法、スパッタ法などがあるが、装置が簡便で、酸化銅膜厚制御し易い熱処理法が好適である。 As an environment in which the conductive polymer is deposited on the copper substrate, a surface treatment method in which the corrosion resistance is higher than that of the copper substrate while maintaining electrical conductivity may be used. This method includes an oxide film treatment, which is effective when corrosion resistance is particularly required. However, this treatment may not be performed when emphasis is placed on conductivity. As a method for forming the oxide film having conductivity, conventionally known methods can be used. For example, there are a heat treatment method, an oxidizing gas exposure method, an alkali solution treatment method, a sputtering method, etc. A heat treatment method that can easily control the film thickness is suitable.
次に、電解重合により耐食性に優れ緻密な導電性高分子層を形成する方法について、図面に基づいて説明をする。まず、支持電解質としてカルボン酸アニオンおよびスルホン酸アニオンを含む化合物及び導電性高分子モノマーを溶媒に溶解して電解重合液を調整し、銅基体を電極(陽極)とし、陰極にはカーボンやステンレスなどの金属を用いて電解重合を行うが、この電解重合初期段階において、銅基体上には3つの反応が起こることとなる。 Next, a method for forming a dense conductive polymer layer having excellent corrosion resistance by electrolytic polymerization will be described with reference to the drawings. First, a compound containing a carboxylic acid anion and a sulfonic acid anion as a supporting electrolyte and a conductive polymer monomer are dissolved in a solvent to prepare an electrolytic polymerization solution, and the copper base is used as an electrode (anode), and the cathode is made of carbon or stainless steel. In the initial stage of electrolytic polymerization, three reactions occur on the copper substrate.
一般的に、電解重合法により導電性高分子膜を形成する場合、支持電解質として塩酸、硫酸、テトラブチルアンモニウムテトラフルオロボレート(TBABF4)などを用いるが、銅表面上では、導電性高分子析出電位よりも銅の溶解反応電位が低いために、銅溶解反応が優先的に生じる。そのため、これまでは銅基体上に直接的に導電性高分子膜を形成することは困難であった。しかしながら、本発明では、この反応を積極的に利用することで、密着性の高い導電性高分子膜を形成することを特徴とする。 In general, when a conductive polymer film is formed by electrolytic polymerization, hydrochloric acid, sulfuric acid, tetrabutylammonium tetrafluoroborate (TBABF 4 ), etc. are used as a supporting electrolyte. Since the copper dissolution reaction potential is lower than the potential, the copper dissolution reaction occurs preferentially. Therefore, until now, it has been difficult to form a conductive polymer film directly on a copper substrate. However, the present invention is characterized in that a conductive polymer film having high adhesion is formed by actively utilizing this reaction.
図1は、本発明により、銅基体上に導電性高分子が析出する機構を示す模式図である。図1における第一段階で示したように、第一の反応として、陽極の銅表面では、導電性高分子の成膜のために加えた支持電解質から放出されるスルホン酸アニオンによってエッチング反応が進行する。このエッチング反応により、銅表面は粗面化され、導電性高分子層のアンカーとなる表面が形成されることとなる。 FIG. 1 is a schematic view showing a mechanism for depositing a conductive polymer on a copper substrate according to the present invention. As shown in the first stage in FIG. 1, as the first reaction, the etching reaction proceeds on the copper surface of the anode by the sulfonate anion released from the supporting electrolyte added for forming the conductive polymer film. To do. By this etching reaction, the copper surface is roughened, and a surface serving as an anchor of the conductive polymer layer is formed.
第二の反応は、電解重合液中に存在するカルボン酸アニオンが、銅と反応することで、防食性が高く電気伝導性を有するカルボン酸銅を基体表面に析出させる。該反応は第一段階の銅エッチング反応とほぼ同時に進行するため、図1における第二段階で示したように、銅基体表面ではカルボン酸銅が点在する状態で析出する。 In the second reaction, a carboxylate anion present in the electrolytic polymerization solution reacts with copper, whereby copper carboxylate having high corrosion resistance and electrical conductivity is deposited on the surface of the substrate. Since the reaction proceeds almost simultaneously with the copper etching reaction in the first stage, as shown in the second stage in FIG. 1, copper carboxylate is deposited on the surface of the copper substrate.
一般的に、カルボン酸アニオンがドープされた導電性高分子の析出電位は、塩皮物質であるカルボン酸銅析出電位よりも低いため、図1における第三段階で示した第三の反応として、電解重合液中に存在するカルボン酸アニオンがドーピングされた導電性高分子が、カルボン酸銅上に析出を始めることになる。すなわち、銅基体表面上に点在するカルボン酸銅上を覆う形で、カルボン酸アニオンがドーピングされた導電性高分子が析出し始める。 In general, the deposition potential of a conductive polymer doped with a carboxylate anion is lower than the deposition potential of a copper salt of carboxylate, which is a salt skin substance. Therefore, as the third reaction shown in the third stage in FIG. The conductive polymer doped with the carboxylic acid anion present in the electrolytic polymerization solution starts to deposit on the carboxylic acid copper. That is, the conductive polymer doped with a carboxylic acid anion starts to precipitate so as to cover the carboxylic acid copper scattered on the surface of the copper substrate.
第三段階を経て、または第三段階と同時に、図1における第四段階で示した第四の反応である、耐食性と導電性が高いスルホン酸アニオンがドーピングされた導電性高分子の析出が可能となる。すなわち、カルボン酸アニオンがドープされた導電性高分子上に、またはその近傍に、さらに析出電位が低いスルホン酸アニオンがドーピングされた導電性高分子の析出が始まる。実際には、上述した反応が瞬間的に起り、カルボン酸銅、カルボン酸アニオンがドープされた導電性高分子、スルホン酸アニオンがドープされた導電性高分子が混在された状態で析出が起こる。結果、銅表面上では、導電性に劣るカルボン酸銅およびカルボン酸がドーピングされた導電性高分子中に、導電性が高いスルホン酸アニオンがドーピングされた導電性高分子が分散した混合層が形成され、該導電性高分子を介することで、導電性に劣るカルボン酸銅およびカルボン酸がドーピングされた導電性高分子層中に導電経路が形成される。この結果、銅基体とスルホン酸アニオンがドーピングされた導電性高分子との良好な導電性が保持できるようになる。 Through the third stage or simultaneously with the third stage, it is possible to deposit a conductive polymer doped with a sulfonate anion having high corrosion resistance and high conductivity, which is the fourth reaction shown in the fourth stage in FIG. It becomes. That is, deposition of a conductive polymer doped with a sulfonate anion having a lower deposition potential starts on or in the vicinity of the conductive polymer doped with a carboxylate anion. Actually, the above-described reaction occurs instantaneously, and precipitation occurs in a state in which copper carboxylate, a conductive polymer doped with a carboxylate anion, and a conductive polymer doped with a sulfonate anion are mixed. As a result, on the copper surface, a mixed layer is formed in which a conductive polymer doped with a highly conductive sulfonate anion is dispersed in a conductive polymer doped with copper carboxylate and carboxylic acid, which have poor conductivity. By passing through the conductive polymer, a conductive path is formed in the conductive polymer layer doped with copper carboxylate and carboxylic acid having poor conductivity. As a result, good conductivity between the copper base and the conductive polymer doped with the sulfonate anion can be maintained.
金属が腐食される環境下として、塩酸水溶液や硫酸水溶液などの酸性雰囲気だけではなく、次亜塩素酸ナトリウム水溶液下のように酸化性雰囲気などもある。そのような環境下では、カルボン酸基を有するドーパントでは、該ドーパントのカルボキシル基が酸化されることでアニオンとして機能しなくなるため、導電性高分子の電気伝導性が損なわれる恐れが生じる。そのため、酸化性がある腐食環境下では、防食性および耐酸化性が非常に高く、さらに緻密な導電性高分子層が形成できるように、スルホン酸アニオンが多くドーピングされるように電解重合液中の組成を特に注意する必要性がある。ところで、本発明で用いるスルホン酸アニオン化合物中のスルホン酸基の数は一価若しくは多価のものを用いることができ、特に限定されない。 As an environment where the metal is corroded, there are not only an acidic atmosphere such as an aqueous hydrochloric acid solution or an aqueous sulfuric acid solution but also an oxidizing atmosphere such as an aqueous sodium hypochlorite solution. In such an environment, a dopant having a carboxylic acid group does not function as an anion when the carboxyl group of the dopant is oxidized, so that the electrical conductivity of the conductive polymer may be impaired. Therefore, in an oxidative corrosive environment, the anti-corrosion and oxidation resistance is very high, and the electropolymerization solution is doped with a large amount of sulfonate anions so that a dense conductive polymer layer can be formed. There is a need to pay particular attention to the composition. By the way, the number of sulfonic acid groups in the sulfonic acid anion compound used in the present invention can be monovalent or polyvalent, and is not particularly limited.
銅基体表面に形成する導電性高分子のモノマーとしては、ピロール、チオフェン、アルキルチオフェン、アルキレンジオキシチオフェン、アニリン、フェニレン、アセチレン、フラン、フェニレンビニレン、アセン、アズレンおよびこれらの誘導体、またはこれらを2つ以上組み合わせたコポリマーなどがあげられるが、特に、防食性および電気伝導度に優れるピロール、アルキルチオフェン、アルキレンジオキシチオフェン、アニリンおよびそれらの誘導体を用いるのが好ましい。 Examples of the conductive polymer monomer formed on the surface of the copper substrate include pyrrole, thiophene, alkylthiophene, alkylenedioxythiophene, aniline, phenylene, acetylene, furan, phenylene vinylene, acene, azulene and derivatives thereof, or 2 Examples of the copolymer include pyrrole, alkylthiophene, alkylenedioxythiophene, aniline and derivatives thereof, which are excellent in corrosion resistance and electrical conductivity.
高い電気伝導性と腐食環境下から基体を保護するバリアー効果を大きく得るには、ポリピロール誘導体およびアニリン誘導体では電解重合法または溶液法が好適であり、ポリアルキルチオフェン誘導体およびポリアルキレンジオキシチオフェンでは電解重合法または化学重合法が好適である。特に、電解重合法により形成される導電性高分子膜は、ドーピング率が高いために電気伝導度が高く、他の形成法に比べて配向性が高く緻密な導電性高分子膜を容易に得ることができるので、導電性高分子膜を形成する方法として最も好適である。 In order to obtain a high barrier property for protecting the substrate from high electrical conductivity and corrosive environment, the electrolytic polymerization method or the solution method is suitable for polypyrrole derivatives and aniline derivatives, and electrolysis is used for polyalkylthiophene derivatives and polyalkylenedioxythiophenes. A polymerization method or a chemical polymerization method is preferred. In particular, a conductive polymer film formed by an electrolytic polymerization method has a high electrical conductivity because of a high doping rate, and easily obtains a dense conductive polymer film having a higher orientation than other forming methods. Therefore, it is most suitable as a method for forming a conductive polymer film.
ドーパントとして用いるカルボン酸アニオンは、電解重合液中に存在するスルホン酸アニオンに対して、0.15〜0.75の濃度比(モル比)とすることが好ましい。なぜなら、0.15未満では、カルボン酸銅の析出が困難となってエッチング反応が主となるために、導電性高分子の析出が困難となり、0.75超では、析出する導電性高分子中にドーピングされるアニオンとしてカルボン酸アニオンが主となり、耐酸化性に劣る恐れがあるためである。 It is preferable that the carboxylate anion used as the dopant has a concentration ratio (molar ratio) of 0.15 to 0.75 with respect to the sulfonate anion present in the electrolytic polymerization solution. This is because, it is less than 0.15, in order to deposit the copper carboxylate is a main etching reaction becomes difficult, deposition of the conductive polymer becomes difficult, a 0.75 greater than the conductive polymer in the precipitated This is because a carboxylate anion is mainly used as an anion to be doped in the metal, and oxidation resistance may be deteriorated.
上記の比率について、導電性を重視する場合には、電解重合液中に存在するスルホン酸アニオンに対して、カルボン酸アニオンを0.15〜0.5の濃度比(モル比)とすることがより好ましく、防食性を重視する場合には、電解重合液中に存在するスルホン酸アニオンに対して、カルボン酸アニオンを0.4〜0.75の濃度比(モル比)とすることがより好ましく、使用する環境や目的に応じて適宜電解重合液中のスルホン酸アニオンとカルボン酸アニオンの比率を変更すれば良い。 Regarding the above ratio, when emphasis is placed on conductivity, the carboxylic acid anion may have a concentration ratio (molar ratio) of 0.15 to 0.5 with respect to the sulfonic acid anion present in the electrolytic polymerization solution. More preferably, when emphasizing the anticorrosion property, it is more preferable to set the carboxylate anion to a concentration ratio (molar ratio) of 0.4 to 0.75 with respect to the sulfonate anion present in the electrolytic polymerization solution. The ratio of the sulfonate anion and the carboxylate anion in the electrolytic polymerization solution may be changed as appropriate according to the environment and purpose of use.
カルボン酸アニオンとしては、アミノインダンカルボン酸、アミノテトラリンカルボン酸、テトラヒドロイソキノリンカルボン酸、テトラヒドロ−β−カルボリンカルボン酸、アウリントリカルボン酸、アクリジンカルボン酸、アセチルピペリジンカルボン酸、アセチレンジカルボン酸、アセトンジカルボン酸、アゼチジネンジカルボン酸、アダマンタンカルボン酸、アミノインダンジカルボン酸、アミノカルボニルシクロプロパンカルボン酸、アミノシクロプロパンカルボン酸、アミノシクロヘキサンカルボン酸、アミノシクロペンタンカルボン酸、アミノジヒドロフェナレンカルボン酸、アミノジメチルピリジンカルボン酸、アミノテトラリンカルボン酸、アミノトリアゾールカルボン酸、アミノビシクロヘプタンカルボン酸、アミノピラジンカルボン酸、アミノピラゾールカルボン酸、アミノメチルシクロヘキサンカルボン酸、アントラセンカルボン酸、アントラキノンカルボン酸、イソキノリンカルボン酸、イミダゾールジカルボン酸、インドールカルボン酸、インドリンカルボン酸、ウラシルカルボン酸、エチルチアゾリジンカルボン酸、エチルビフェニルカルボン酸、オキソテトラヒドロフランカルボン酸、オキソピペリジンカルボン酸、オキソベンゾピランカルボン酸、カルボンキノキサリンカルボン酸、キノリンカルボン酸、クロロインドールカルボン酸、クロロエチルフルオロオキソヒドロキノリンカルボン酸、クロロエチレンジオキシビシクロヘプタンカルボン酸、クロロオキソ‐ビシクロヘプタンカルボン酸、クロロシクロプロピルフルオロオキソヒドロキノリンカルボン酸、クロロチオフェンカルボン酸、クロロフェニルシクロブタンカルボン酸、クロロフェニルシクロプロパンカルボン酸、クロロフェニルシクロヘキサンカルボン酸、クロロフェニルシクロペンタンカルボン酸、クロロフルオロシクロプロピルジヒドロオキソキノリンカルボン酸、クロロフルオロフェニルシクロヘキサンカルボン酸、クロロフルオロフェニルシクロヘキサンカルボン酸、クロロフルオロフェニルシクロペンタンカルボン酸、クロロフルオロフェニルシクロペンタンカルボン酸、クロロベンゾイルシクロヘキサンカルボン酸、クロロメチルピリジンカルボン酸、クロロメチルフランカルボン酸エチル、サリチル酸、シアノシクロプロパンカルボン酸、シクロブタンカルボン酸、シクロブタンジカルボン酸、シクロプロパンカルボン酸、シクロヘキサンカルボン酸、シクロヘキサンジカルボン酸、シクロヘキセンカルボン酸、シクロペンタンカルボン酸、シクロペンタンテトラカルボン酸、ジクロロフェニルシクロプロパンカルボン酸、ジクロロフルオロピリジンカルボン酸、ジヒドロキシアントラキノンカルボン酸、ジヒドロキシピリミジンカルボン酸、ジヒドロジメチルオキソピランカルボン酸、ジフルオロジヒドロメチルオキソピリドベンゾオキサジンカルボン酸、ヒドロキシベンゼンカルボン酸、ヒドロキシナフトエ酸、ジメチルアミノアゾベンゼンカルボン酸、ジメチルジフェニルジカルボン酸、チアゾリジンカルボン酸、チオフェンカルボニルシクロヘキサンカルボン酸、チオフェンカルボニルシクロヘキサンカルボン酸、チオフェンカルボン酸、テトラヒドロアクリジンカルボン酸、テトラヒドロイソキノリンカルボン酸、テトラヒドロオキソフランカルボン酸、テトラヒドロフランテトラカルボン酸、テトラメチルイミダゾリンオキシルカルボン酸、テトラメチルピペリジンオキシルアミノカルボン酸、テトラメチルピロリンオキシルカルボン酸、デカンジカルボン酸、トシルピロールカルボン酸、トリヒドロキシシクロヘキセンカルボン酸、トリメチルチアゾリンカルボン酸、シクロペンタンカルボン酸、ドデカンジカルボン酸、ナフタレンジカルボン酸、ナフトキノンカルボン酸、ニトロインドールカルボン酸、ベンゼンテトラカルボン酸、ベンゾフェノンテトラカルボン酸、ペリレンテトラカルボン酸、ノルアダマンタンカルボン酸、ルボルネンジカルボン酸、ヒドロキシインドールカルボン酸、ヒドロキシキノキノキサリンカルボン酸、ヒドロキシキノリンカルボン酸、ヒドロキシシクロプロパンカルボン酸、ヒドロキシテトラヒドロイソキノリンカルボン酸、ヒドロキシトリフルオロメチルキノリンカルボン酸、ヒドロキシ(2−ヒドロキシ−4−スルホ−1−ナフチルアゾ)ナフタレンカルボン酸、ヒドロキシビフェニルカルボン酸ヒドロキシピリジンカルボン酸、ヒドロキシピロリジンカルボン酸、ヒドロキシメチルキノリンカルボン酸、ヒドロキシメチルピリジンカルボン酸、ビシクロオクトエンテトラカルボン酸、ビフェニルカルボン酸、ビベンジルカルボン酸、ピペラジンカルボン酸、ピペリジンカルボン酸、ピラジンカルボン酸、ピラジンジカルボン酸、ピラゾールジカルボン酸、ピリジンカルボン酸、ピリジンジカルボン酸、ピロリジンカルボン酸、ピロリジンカルボン酸、ピロリドンカルボン酸、フェニルシクロプロパンカルボン酸、フェニルシクロヘキサンカルボン酸、フェニルシクロペンタンカルボン酸、フェニルチアゾリジンカルボン酸、フェニルピロリジンカルボン酸、フェロセンジカルボン酸、フランカルボン酸、フルオレノンカルボン酸、フルオロインドールカルボン酸、(フルオロフェニル)シクロヘキサンカルボン酸、(フルオロフェニル)シクロペンタンカルボン酸、(フルオロベンゾイル)シクロヘキサンカルボン酸、ブチルシクロヘキサンカルボン酸、(tert−ブチルジメチルシリル)アゼチジンオンカルボン酸、ブチルピリジンカルボン酸、(tert−ブトキシカルボニルアミノ)シクロヘキサンカルボン酸、(tert−ブトキシカルボニルアミノ)シクロペンタンカルボン酸、(tert−ブトキシカルボニルアミノ)テトラヒドロナフタレン−2−カルボン酸、ブロモエチレンジオキシビシクロヘプタンカルボン酸、(ブロモベンゾイル)シクロヘキサンカルボン酸、プロピルシクロヘキサンカルボン酸、プロピルビフェニルカルボン酸、(ベンジルオキシカルボニルアミノ)シクロヘキサンカルボン酸、(ベンジルオキシカルボニルアミノ)ビシクロヘプトエンカルボン酸、(ベンジルオキシカルボニル)テトラヒドロイソキノリンカルボン酸、ベンゼンテトラカルボン酸、ベンゼントリカルボン酸、ベンゾイルシクロヘキサンカルボン酸、ベンゾイルビシクロヘプタンカルボン酸、ベンゾイルフェニルシクロヘキサンカルボン酸、チオフェンカルボン酸、ベンゾテルロフェンカルボン酸、ベンゾフェノンカルボン酸、ベンゾフランカルボン酸、ペンチルシクロヘキサンカルボン酸、シクロヘキサンジカルボン酸、ジヒドロジチインジカルボン酸、ノルボルネンジカルボン酸、ビシクロオクトエンジカルボン酸、ピリジンジカルボン酸、フェニルシクロヘキサンジカルボン酸、ヘキサクロロノルボルネンジカルボン酸、ベンゼントリカルボン酸、メチルノルボルネンジカルボン酸、メチルシクロプロパンカルボン酸、メチルシクロヘキサンカルボン酸、メチルチアゾリジンカルボン酸、メチルチオフェンカルボン酸、メチルテトラヒドロイソキノリンカルボン酸、メチルピラジンカルボン酸、メチルピロールカルボン酸、メチルピロリジンカルボン酸、メチルピロリジンカルボン酸、(メチルフェニル)シクロプロパンカルボン酸、(メチルフェニル)シクロヘキサンカルボン酸、メチルベンズイミダゾールカルボン酸、メチルベンゼンスルホン酸フェニルピペリジンカルボン酸、(p−メチルベンゾイル)シクロヘキサンカルボン酸、(p−メチルベンゾイル)シクロヘキサンカルボン酸、メチレンシクロプロパンジカルボン酸、メチレンビス(ヒドロキシ−ナフタレンカルボン酸)メトキシインドールカルボン酸、(メトキシフェニル)シクロプロパンカルボン酸、(メトキシフェニル)シクロヘキサンカルボン酸、(メトキシフェニル)シクロペンタンカルボン酸、アダマンタン酢酸、アニリノ酢酸、アミノ酢酸、アミノフェニル酢酸、イソデヒドロ酢酸、イミノ二酢酸、インドール酢酸、エチルアセト酢酸、エチレンジアミン四酢酸、エトキシ酢酸、オキサル酢酸、オキシ二酢酸、クレシルバイオレット酢酸、クロルマジノン酢酸、クロロジフルオロ酢酸、クロロフェニル酢酸、グアニジン酢酸、グルコース五酢酸、イミノ二酢酸、酢酸テトラメチル、シアノ酢酸、シクロヘキサン二酢酸、シクロヘキシル酢酸、シクロヘキシルフェニル酢酸、シクロペンチル酢酸、ジフェニル酢酸、ジエチルホスホノ酢酸、ジエチレントリアミン五酢酸、ジクロロインドール酢酸、ジクロロ酢酸、ジクロロフェニル酢酸、ジヒドロキシフェニル酢酸、ジフルオロフェニル酢酸、ブチルメチルフェニルジアゾ酢酸、ジブロモ酢酸、スチリル酢酸、チオール酢酸、スルホ酢酸、チオ酢酸、チオフェン酢酸、デヒドロ酢酸、トリエチレンテトラミン六酢酸、トリクロロ酢酸、トリブロモ酢酸、トリメチル酢酸、トリメトキシフェニル酢酸、トリル酢酸、ナフタレン酢酸、ナフチル酢酸、ナフトキシ酢酸、ニトリロ三酢酸、ニトロフェニル酢酸、ニトロフェノキシ酢酸、ノニルフェノキシ酢酸、ヒダントイン酢酸、ヒドラジン酢酸、ヒドロキシ酢酸、ヒドロキシフェニル酢酸、ヒドロキシフェノキシ酢酸、ヒドロキノン酢酸、ビニル酢酸、ビフェニル酢酸、フェニルシクロペンタン酢酸、フェニレン二酢酸、フェニレン二酢酸、フェノキシ酢酸、フルオロフェニル酢酸、ブチル酢酸、ブトキシ酢酸、ブロモ酢酸、ブロモフェニル酢酸、ペンタフルオロフェニル酢酸、ホルミルフェノキシ酢酸、無水クロロ酢酸、無水酢酸、無水トリフルオロ酢酸、無水トリメチル酢酸、無水ヨード酢酸、メチルアミノ酢酸、メチルイミノ二酢酸、メチルスルホニルフェニル酢酸、メチルフェニル酢酸、メトキシインドール酢酸、メトキシ酢酸、メトキシフェニル酢酸、メルカプト酢酸、モノクロロ酢酸、ヨード酢酸、蓚酸、蟻酸、酒石酸、クエン酸およびその誘導体のアルカリ金属塩およびこれらのアンモニウム塩などのアニオン成分が挙げられるが、
より好ましくは、ベンゼンカルボン酸、ヒドロキシベンゼンカルボン酸、ナフトキノンカルボン酸、アントラセンカルボン酸、アントラキノンカルボン酸、エチレンジアミン四酢酸、トリフロロ酢酸、ナフタレンジカルボン酸、ブトキシ酢酸、ビニル酢酸、シュウ酸、フェロセンジカルボン酸、蓚酸、酒石酸、クエン酸およびその誘導体のアルカリ金属塩およびこれらのアンモニウム塩などのアニオン成分が挙げられる。
Examples of the carboxylate anion include aminoindane carboxylic acid, aminotetralin carboxylic acid, tetrahydroisoquinoline carboxylic acid, tetrahydro-β-carboline carboxylic acid, aurine tricarboxylic acid, acridine carboxylic acid, acetyl piperidine carboxylic acid, acetylenedicarboxylic acid, acetone dicarboxylic acid, Azetidinenedicarboxylic acid, adamantanecarboxylic acid, aminoindanedicarboxylic acid, aminocarbonylcyclopropanecarboxylic acid, aminocyclopropanecarboxylic acid, aminocyclohexanecarboxylic acid, aminocyclopentanecarboxylic acid, aminodihydrophenalenecarboxylic acid, aminodimethylpyridinecarboxylic acid Acid, aminotetralin carboxylic acid, aminotriazole carboxylic acid, aminobicycloheptane carboxylic acid, aminopirine Gin carboxylic acid, aminopyrazole carboxylic acid, aminomethylcyclohexane carboxylic acid, anthracene carboxylic acid, anthraquinone carboxylic acid, isoquinoline carboxylic acid, imidazole dicarboxylic acid, indole carboxylic acid, indoline carboxylic acid, uracil carboxylic acid, ethyl thiazolidine carboxylic acid, ethyl biphenyl Carboxylic acid, oxotetrahydrofuran carboxylic acid, oxopiperidine carboxylic acid, oxobenzopyran carboxylic acid, carboxylic quinoxaline carboxylic acid, quinoline carboxylic acid, chloroindole carboxylic acid, chloroethylfluorooxohydroquinoline carboxylic acid, chloroethylenedioxybicycloheptane carboxylic acid , Chlorooxo-bicycloheptanecarboxylic acid, chlorocyclopropylfluorooxohydroquino Phosphorus carboxylic acid, chlorothiophene carboxylic acid, chlorophenyl cyclobutane carboxylic acid, chlorophenyl cyclopropane carboxylic acid, chlorophenyl cyclohexane carboxylic acid, chlorophenyl cyclopentane carboxylic acid, chlorofluorocyclopropyl dihydrooxoquinoline carboxylic acid, chlorofluorophenyl cyclohexane carboxylic acid, chlorofluoro Phenylcyclohexanecarboxylic acid, chlorofluorophenylcyclopentanecarboxylic acid, chlorofluorophenylcyclopentanecarboxylic acid, chlorobenzoylcyclohexanecarboxylic acid, chloromethylpyridinecarboxylic acid, ethyl chloromethylfurancarboxylate, salicylic acid, cyanocyclopropanecarboxylic acid, cyclobutanecarboxylic acid Acid, cyclobutane dicarboxylic acid, cyclo Lopancarboxylic acid, cyclohexanecarboxylic acid, cyclohexanedicarboxylic acid, cyclohexenecarboxylic acid, cyclopentanecarboxylic acid, cyclopentanetetracarboxylic acid, dichlorophenylcyclopropanecarboxylic acid, dichlorofluoropyridinecarboxylic acid, dihydroxyanthraquinonecarboxylic acid, dihydroxypyrimidinecarboxylic acid, dihydrodimethyl Oxopyrancarboxylic acid, difluorodihydromethyloxopyridobenzoxazinecarboxylic acid, hydroxybenzenecarboxylic acid, hydroxynaphthoic acid, dimethylaminoazobenzenecarboxylic acid, dimethyldiphenyldicarboxylic acid, thiazolidinecarboxylic acid, thiophenecarbonylcyclohexanecarboxylic acid, thiophenecarbonylcyclohexanecarboxylic acid Acid, thiophenecarbo Acid, tetrahydroacridinecarboxylic acid, tetrahydroisoquinolinecarboxylic acid, tetrahydrooxofurancarboxylic acid, tetrahydrofurantetracarboxylic acid, tetramethylimidazolineoxylcarboxylic acid, tetramethylpiperidineoxylaminocarboxylic acid, tetramethylpyrrolineoxylcarboxylic acid, decanedicarboxylic acid, tosyl Pyrrole carboxylic acid, trihydroxycyclohexene carboxylic acid, trimethylthiazoline carboxylic acid, cyclopentane carboxylic acid, dodecanedicarboxylic acid, naphthalenedicarboxylic acid, naphthoquinone carboxylic acid, nitroindole carboxylic acid, benzenetetracarboxylic acid, benzophenonetetracarboxylic acid, perylenetetracarboxylic acid Acid, noradamantanecarboxylic acid, rubornene dicarboxylic acid, hydroxy Indole carboxylic acid, hydroxyquinoquinoxaline carboxylic acid, hydroxy quinoline carboxylic acid, hydroxy cyclopropane carboxylic acid, hydroxy tetrahydroisoquinoline carboxylic acid, hydroxy trifluoromethyl quinoline carboxylic acid, hydroxy (2-hydroxy-4-sulfo-1-naphthylazo) naphthalene Carboxylic acid, hydroxybiphenylcarboxylic acid, hydroxypyridinecarboxylic acid, hydroxypyrrolidinecarboxylic acid, hydroxymethylquinolinecarboxylic acid, hydroxymethylpyridinecarboxylic acid, bicyclooctenetetracarboxylic acid, biphenylcarboxylic acid, bibenzylcarboxylic acid, piperazinecarboxylic acid, piperidine Carboxylic acid, pyrazine carboxylic acid, pyrazine dicarboxylic acid, pyrazole dicarboxylic acid, pyridine cal Acid, pyridinedicarboxylic acid, pyrrolidinecarboxylic acid, pyrrolidinecarboxylic acid, pyrrolidonecarboxylic acid, phenylcyclopropanecarboxylic acid, phenylcyclohexanecarboxylic acid, phenylcyclopentanecarboxylic acid, phenylthiazolidinecarboxylic acid, phenylpyrrolidinecarboxylic acid, ferrocenedicarboxylic acid, Furancarboxylic acid, fluorenonecarboxylic acid, fluoroindolecarboxylic acid, (fluorophenyl) cyclohexanecarboxylic acid, (fluorophenyl) cyclopentanecarboxylic acid, (fluorobenzoyl) cyclohexanecarboxylic acid, butylcyclohexanecarboxylic acid, (tert-butyldimethylsilyl) Azetidinone carboxylic acid, butylpyridine carboxylic acid, (tert-butoxycarbonylamino) cyclohexane Rubonic acid, (tert-butoxycarbonylamino) cyclopentanecarboxylic acid, (tert-butoxycarbonylamino) tetrahydronaphthalene-2-carboxylic acid, bromoethylenedioxybicycloheptanecarboxylic acid, (bromobenzoyl) cyclohexanecarboxylic acid, propylcyclohexanecarboxylic acid Acid, propylbiphenylcarboxylic acid, (benzyloxycarbonylamino) cyclohexanecarboxylic acid, (benzyloxycarbonylamino) bicycloheptenecarboxylic acid, (benzyloxycarbonyl) tetrahydroisoquinolinecarboxylic acid, benzenetetracarboxylic acid, benzenetricarboxylic acid, benzoylcyclohexane Carboxylic acid, benzoylbicycloheptanecarboxylic acid, benzoylphenylcyclohexanecarboxylic acid , Thiophenecarboxylic acid, benzotellophenecarboxylic acid, benzophenonecarboxylic acid, benzofurancarboxylic acid, pentylcyclohexanecarboxylic acid, cyclohexanedicarboxylic acid, dihydrodithiindicarboxylic acid, norbornene dicarboxylic acid, bicyclooctene dicarboxylic acid, pyridinedicarboxylic acid, phenylcyclohexane Dicarboxylic acid, hexachloronorbornene dicarboxylic acid, benzenetricarboxylic acid, methylnorbornene dicarboxylic acid, methylcyclopropanecarboxylic acid, methylcyclohexanecarboxylic acid, methylthiazolidinecarboxylic acid, methylthiophenecarboxylic acid, methyltetrahydroisoquinolinecarboxylic acid, methylpyrazinecarboxylic acid, methyl Pyrrole carboxylic acid, methyl pyrrolidine carboxylic acid, methyl pyrrolidine Rubonic acid, (methylphenyl) cyclopropanecarboxylic acid, (methylphenyl) cyclohexanecarboxylic acid, methylbenzimidazolecarboxylic acid, methylbenzenesulfonic acid phenylpiperidinecarboxylic acid, (p-methylbenzoyl) cyclohexanecarboxylic acid, (p-methylbenzoyl) ) Cyclohexanecarboxylic acid, methylenecyclopropanedicarboxylic acid, methylenebis (hydroxy-naphthalenecarboxylic acid) methoxyindolecarboxylic acid, (methoxyphenyl) cyclopropanecarboxylic acid, (methoxyphenyl) cyclohexanecarboxylic acid, (methoxyphenyl) cyclopentanecarboxylic acid, Adamantaneacetic acid, anilinoacetic acid, aminoacetic acid, aminophenylacetic acid, isodehydroacetic acid, iminodiacetic acid, indoleacetic acid, ethylacetate Acid, ethylenediaminetetraacetic acid, ethoxyacetic acid, oxalacetic acid, oxydiacetic acid, cresyl violet acetic acid, chlormadinone acetic acid, chlorodifluoroacetic acid, chlorophenylacetic acid, guanidine acetic acid, glucose pentaacetic acid, iminodiacetic acid, tetramethyl acetate, cyanoacetic acid, cyclohexane Diacetic acid, cyclohexylacetic acid, cyclohexylphenylacetic acid, cyclopentylacetic acid, diphenylacetic acid, diethylphosphonoacetic acid, diethylenetriaminepentaacetic acid, dichloroindoleacetic acid, dichloroacetic acid, dichlorophenylacetic acid, dihydroxyphenylacetic acid, difluorophenylacetic acid, butylmethylphenyldiazoacetic acid, dibromo Acetic acid, styryl acetic acid, thiol acetic acid, sulfoacetic acid, thioacetic acid, thiophene acetic acid, dehydroacetic acid, triethylenetetramine hexaacetic acid, trichloro Acetic acid, tribromoacetic acid, trimethylacetic acid, trimethoxyphenylacetic acid, tolylacetic acid, naphthaleneacetic acid, naphthylacetic acid, naphthoxyacetic acid, nitrilotriacetic acid, nitrophenylacetic acid, nitrophenoxyacetic acid, nonylphenoxyacetic acid, hydantoinacetic acid, hydrazineacetic acid, hydroxyacetic acid , Hydroxyphenylacetic acid, hydroxyphenoxyacetic acid, hydroquinoneacetic acid, vinylacetic acid, biphenylacetic acid, phenylcyclopentaneacetic acid, phenylenediacetic acid, phenylenediacetic acid, phenoxyacetic acid, fluorophenylacetic acid, butylacetic acid, butoxyacetic acid, bromoacetic acid, bromophenylacetic acid , Pentafluorophenylacetic acid, formylphenoxyacetic acid, chloroacetic anhydride, acetic anhydride, trifluoroacetic anhydride, trimethylacetic anhydride, iodoacetic anhydride, methylaminoacetic acid, Louisinodiacetic acid, methylsulfonylphenylacetic acid, methylphenylacetic acid, methoxyindoleacetic acid, methoxyacetic acid, methoxyphenylacetic acid, mercaptoacetic acid, monochloroacetic acid, iodoacetic acid, oxalic acid, formic acid, tartaric acid, citric acid and alkali metal salts thereof and their derivatives Anionic components such as ammonium salts of
More preferably, benzenecarboxylic acid, hydroxybenzenecarboxylic acid, naphthoquinonecarboxylic acid, anthracenecarboxylic acid, anthraquinonecarboxylic acid, ethylenediaminetetraacetic acid, trifluoroacetic acid, naphthalenedicarboxylic acid, butoxyacetic acid, vinylacetic acid, oxalic acid, ferrocenedicarboxylic acid, oxalic acid And anionic components such as tartaric acid, citric acid and alkali metal salts of derivatives thereof and ammonium salts thereof.
もう一方のドーパントであるスルホン酸アニオンの分子量は240以上であることが好適である。240未満である場合、分子量が小さい、すなわち分子が小さいために溶液中で脱ドーピング作用が生じ、また大気中においても導電性高分子被覆材が高温になるような場所では脱ドーピングが生じ、導電性高分子の電気伝導性が失われてしまう可能性があるためである。そのように1つ以上のスルホン酸基を有し、分子量が240以上のドーパント化合物としては、具体的には、フェロセンスルホン酸ナトリウムやリグニンスルホン酸ナトリウムなどのアニオン成分を例示することができる。このようなドーパントを含有する導電性高分子被膜は、腐食環境と基体とを遮断するバリアー効果が大きく好適である。 The molecular weight of the sulfonate anion, which is the other dopant, is preferably 240 or more. If the molecular weight is less than 240, the molecular weight is small, that is, the molecule is small, so that the dedoping action occurs in the solution. This is because the electrical conductivity of the conductive polymer may be lost. Specific examples of the dopant compound having one or more sulfonic acid groups and a molecular weight of 240 or more include anionic components such as sodium ferrocenesulfonate and sodium ligninsulfonate. A conductive polymer film containing such a dopant is suitable because it has a large barrier effect for blocking the corrosive environment from the substrate.
さらに、スルホン酸アニオンの分子構造として、ベンゼン縮合環及び/又は2つ以上の芳香環を有するスルホン酸アニオンは、導電性高分子の高分子鎖と複雑に絡み合うことができ、より緻密な構造を生み出し、バリアー効果をより増大することができ、より好ましい。また、該スルホン酸アニオンは導電性高分子鎖と複雑に絡み合うことによって、脱ドーピングし難くなる効果も併せ持ち、好適である。 Furthermore, as the molecular structure of the sulfonate anion, the sulfonate anion having a benzene condensed ring and / or two or more aromatic rings can be intricately intertwined with the polymer chain of the conductive polymer, resulting in a more precise structure. It is possible to produce and increase the barrier effect more preferably. In addition, the sulfonate anion is suitable because it has an effect of being difficult to dedope by being intricately entangled with the conductive polymer chain.
このようなスルホン酸アニオンとしては、アントラセンスルホン酸、アントラセンスルホン酸、ジフェニルアミンスルホン酸、ジフェニルアミンスルホン酸のアルカリ金属塩およびそれらのアンモニウム塩、色素であるアシッドブラック1、アシッドブルー1、アシッドブルー3、アシッドブルー9、アシッドブルー20、アシッドブルー74、アシッドブルー83、アシッドブルー92、アシッドブルー119、アシッドブルー147、アシッドA、アシッドブリリアントグリーンJ、アシッドブラウンM、アシッドキャプターH、アシッドキャプター9M、アシッドシアニン6B、アシッドファーストイエローG、アシッドファクシン、アシッドグリーン1、アシッドグリーン3、アシッドグリーン5、アシッドグリーン9、アシッドグリーン16、アシッドグリーン50、アシッドグリーンB、アシッドグリーンGG、アシッドライトイエロー2G、アシッドオレンジ5、アシッドオレンジ6、アシッドオレンジ7、アシッドオレンジ17、アシッドオレンジ20、アシッドレッド、アシッドレッド1、アシッドレッド2、アシッドレッド9、アシッドレッド13、アシッドレッド18、アシッドレッド18、アシッドレッド26、アシッドレッド27、アシッドレッド29、アシッドレッド52、アシッドレッド60、アシッドレッド87、アシッドレッド88、アシッドレッド91、アシッドレッド92、アシッドレッド94、アシッドレッド112、アシッドレッド265、アシッドバイオレッド6B、アシッドバイオレッド34、アシッドバイオレッド43、アシッドバイオレッド49、アシッドイエロー3、アシッドイエロー23、アシッドレッド36、アシッドイエロー73、アシッドイエロー186、サルフォナゾIII、モルダント29、サンクロマインブルーブラックR、サンクロマインブルーブラックMB、サンクロマインブルーブラックMD、サンセットイエローFCF、アルファマインレッドR、アルファマインレッドRベース、アルセナゾI、アルセナゾIIIおよびそれらの誘導体などのアニオン成分が挙げられる。 Examples of the sulfonic acid anion include anthracene sulfonic acid, anthracene sulfonic acid, diphenylamine sulfonic acid, alkali metal salts of diphenylamine sulfonic acid and ammonium salts thereof, acid black 1, acid blue 1, acid blue 3, acid Blue 9, Acid Blue 20, Acid Blue 74, Acid Blue 83, Acid Blue 92, Acid Blue 119, Acid Blue 147, Acid A, Acid Brilliant Green J, Acid Brown M, Acid Captor H, Acid Captor 9M, Acid Cyanine 6B , Acid First Yellow G, Acid Faxin, Acid Green 1, Acid Green 3, Acid Green 5, Acid Green 9, Acid G 16, Acid Green 50, Acid Green B, Acid Green GG, Acid Light Yellow 2G, Acid Orange 5, Acid Orange 6, Acid Orange 7, Acid Orange 17, Acid Orange 20, Acid Red, Acid Red 1, Acid Red 2, Acid Red 9, Acid Red 13, Acid Red 18, Acid Red 18, Acid Red 26, Acid Red 27, Acid Red 29, Acid Red 52, Acid Red 60, Acid Red 87, Acid Red 88, Acid Red 91, Acid Red 92, Acid Red 94, Acid Red 112, Acid Red 265, Acid Bio Red 6B, Acid Bio Red 34, Acid Bio Red 43, Acid Bio Red 49, Acid Yellow 3, Acid Yellow 23, Acid Red 36, Acid Yellow 73, Acid Yellow 186, Sulfonazo III, Moldant 29, Sun Chromaine Blue Black R, Sun Chromaine Blue Black MB, Sun Chromaine Blue Black MD, Sunset And anionic components such as Yellow FCF, Alpha Mine Red R, Alpha Mine Red R base, Arsenazo I, Arsenazo III and their derivatives.
さらにスルホン酸アニオンとしては、分子内に少なくとも一つ以上のカルボキシル基と少なくとも一つ以上のスルホン酸基とを有したものを用いることができる。そのようなアニオンとしてはスルホサリチル酸及びその誘導体等が挙げられる。 Further, as the sulfonate anion, those having at least one carboxyl group and at least one sulfonate group in the molecule can be used. Examples of such anions include sulfosalicylic acid and derivatives thereof.
また、上述した構造を有するスルホン酸アニオンの中でも、さらに、少なくとも1つ以上のスルホン酸基を有し、電気化学的に可逆である酸化還元活性を示すスルホン酸アニオンを含む導電性高分子膜は、腐食性液体と基体とのバリアー性を持たせることができる機能を有しているだけではなく、腐食環境下に曝された場合、該スルホン酸アニオンがその環境下に合わせて酸化還元反応を行うことによって、電気化学的に導電性高分子被覆材の電極電位を制御するために、特に基体の防食効果が顕著になり、好ましい。 In addition, among the sulfonate anions having the above-described structure, a conductive polymer film containing a sulfonate anion having at least one sulfonate group and exhibiting electrochemically reversible oxidation-reduction activity is also provided. In addition to having the function of providing a barrier property between the corrosive liquid and the substrate, when exposed to a corrosive environment, the sulfonate anion performs a redox reaction in accordance with the environment. This is preferable because the anticorrosion effect of the substrate becomes particularly remarkable in order to electrochemically control the electrode potential of the conductive polymer coating material.
前述の電気化学的に可逆である酸化還元活性とは、電気化学的に可逆な酸化還元反応を示すことができる化合物、すなわち陽極で酸化され、陰極では還元されて元に状態に戻ることができる化合物を指す。例えば、ナフトキノンスルホン酸に含まれるキノン構造部位は、陽極では酸化されてヒドロキシ基に成るが、該ヒドロキシ基部位は陰極において還元されてキノン構造へと戻る。この反応は、サイクリックボルタンメトリ法で確認することができ、酸化反応時の反応ピークと還元反応時の反応ピークがほぼ同じ電位で現れる。 The electrochemically reversible redox activity described above is a compound capable of exhibiting an electrochemically reversible redox reaction, that is, oxidized at the anode and reduced at the cathode to return to the original state. Refers to a compound. For example, the quinone structure site contained in naphthoquinonesulfonic acid is oxidized at the anode to become a hydroxy group, but the hydroxy group site is reduced at the cathode to return to the quinone structure. This reaction can be confirmed by the cyclic voltammetry method, and the reaction peak during the oxidation reaction and the reaction peak during the reduction reaction appear at substantially the same potential.
前記電気化学的に可逆である酸化還元活性を有する少なくとも1つ以上のスルホン酸基を含むスルホン酸アニオンとしては、フェロセンスルホン酸、ハイドロキノンスルホン酸、アントキノンスルホン酸、ナフトキノンスルホン酸、アザキサントンスルホン酸、ベンズアントラキノンスルホン酸、ベンズアンスロンスルホン酸、フェニルアゾベンゼンスルホン酸、ベンゾキノンスルホン酸、色素であるアントラキノンアイリンR、アントラキノンバイオレッドRN−3RNなどのアニオン成分があげられるが、耐酸化性と脱ドーピング作用を抑制する観点からフェロセンスルホン酸、アントラキノンスルホン酸、ナフトキノンスルホン酸、アザキサントンスルホン酸、ベンズアントラキノンスルホン酸、ベンズアンスロンスルホン酸、フェニルアゾベンゼンスルホン酸、色素であるアントラキノンアイリンR、アントラキノンバイオレッドRN−3RNのアニオン成分を用いるのがより好ましい。 Examples of the sulfonic acid anion containing at least one sulfonic acid group having electrochemically reversible redox activity include ferrocene sulfonic acid, hydroquinone sulfonic acid, anthoquinone sulfonic acid, naphthoquinone sulfonic acid, and azaxanthone sulfonic acid. , Anionic components such as benzanthraquinone sulfonic acid, benzanthrone sulfonic acid, phenylazobenzene sulfonic acid, benzoquinone sulfonic acid, dye anthraquinone irin R, anthraquinone bio red RN-3RN, but with oxidation resistance and dedoping action From the viewpoint of inhibition, ferrocene sulfonic acid, anthraquinone sulfonic acid, naphthoquinone sulfonic acid, azaxanthone sulfonic acid, benzanthraquinone sulfonic acid, benzanthrone sulfonic acid, pheny Azobenzene sulfonic acid, dye and is anthraquinone Irene R, and it is more preferable to use the anionic component of the anthraquinone violet RN-3RN.
それらの中でも、キノン構造と1つ以上の芳香環を含むスルホン酸基を有するスルホン酸アニオンは、電気化学的活性が高く、かつ酸化還元電位が高い。そのため、該スルホン酸アニオンを含む導電性高分子膜の酸化還元電位は最も貴へとシフトし、銅基体を保護する効果が最も高くすることが可能であるため、該スルホン酸アニオンを用いるのが最も好適である。このようなスルホン酸アニオンを有するドーパントの具体例として、アントラキノンスルホン酸やナフトキノンスルホン酸等が挙げられる。 Among them, a sulfonate anion having a sulfonic acid group containing a quinone structure and one or more aromatic rings has high electrochemical activity and a high redox potential. Therefore, the redox potential of the conductive polymer film containing the sulfonate anion is shifted to the most noble and the effect of protecting the copper substrate can be maximized. Therefore, the sulfonate anion is used. Most preferred. Specific examples of the dopant having such a sulfonate anion include anthraquinone sulfonic acid and naphthoquinone sulfonic acid.
前述の各スルホン酸アニオンを含む支持電解質は、電解重合液中に単独で含有させても良いし、複数存在するように調製されても良い。さらに、導電性高分子膜に含有させるドーパントの総含有量はモノマー1molに対して0.001〜1molが好ましい。 The above-mentioned supporting electrolyte containing each sulfonate anion may be contained alone in the electrolytic polymerization solution, or may be prepared so as to exist in plural. Furthermore, the total content of the dopant contained in the conductive polymer film is preferably 0.001 to 1 mol with respect to 1 mol of the monomer.
また、あらかじめ基体にプレス加工等の曲げ加工、切削加工、エッチング加工等の機械加工後に、導電性高分子の形成工程を行うことによって、複雑な形状の基体形成時に導電性高分子膜を損傷することなく、該導電性高分子膜の効果を確実に得ることができる。すなわち、導電性高分子膜の形成に関し、上記のように加工後の基体を電極として電解重合を行えば、加工によって基体表面が凹凸状態にあっても、均一に導電性高分子膜を形成することが可能となり、安定した性能を得ることができる。 In addition, the conductive polymer film is damaged when forming a substrate having a complicated shape by performing a conductive polymer formation process after bending, such as pressing, cutting, etching, etc., on the substrate in advance. Therefore, the effect of the conductive polymer film can be reliably obtained. That is, regarding the formation of the conductive polymer film, if the electropolymerization is performed using the processed substrate as an electrode as described above, the conductive polymer film is uniformly formed even if the substrate surface is uneven by processing. And stable performance can be obtained.
形成する導電性高分子の厚みは、0.001μmから100μmが適当であるが、経済的観点から、0.001μmから50μmがより好ましく、0.01μmから35μmが最も好ましい。 The thickness of the conductive polymer to be formed is suitably from 0.001 μm to 100 μm, but from an economic point of view, 0.001 μm to 50 μm is more preferable, and 0.01 μm to 35 μm is most preferable.
以下、本発明を実施例に基づいて詳細に説明するが、本発明は実施例によりなんら限定されるものではない。 EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example, this invention is not limited at all by the Example.
実施例2
基体としてリン脱酸銅板を用いた。リン脱酸銅板は大きさが20×30mm、厚さが0.2mmの圧延材であった。本基体を、水酸化ナトリウム10g/L、炭酸ナトリウム40g/L、ケイ酸ナトリウム10g/L、ドデシルベンゼンスルホン酸0.1g/Lをとなるように調整された溶液中に浸漬して脱脂後、塩酸1.0mol/Lに調整された銅表面活性化溶液に1分間浸漬させて基体表面処理を行い、電解重合液中に供した。
Example 2
A phosphorous deoxidized copper plate was used as the substrate. The phosphorous deoxidized copper plate was a rolled material having a size of 20 × 30 mm and a thickness of 0.2 mm. This substrate was degreased by immersing it in a solution adjusted to 10 g / L of sodium hydroxide, 40 g / L of sodium carbonate, 10 g / L of sodium silicate, and 0.1 g / L of dodecylbenzenesulfonic acid, The substrate surface treatment was performed by immersing in a copper surface activation solution adjusted to 1.0 mol / L of hydrochloric acid for 1 minute, and the resulting solution was supplied into an electrolytic polymerization solution.
次に、電解重合法によってカルボン酸アニオンおよびスルホン酸アニオンをドーパントとして含む導電性高分子膜を形成した。溶媒を純水とし、単量体としてピロール0.5mol/L、支持電解質としてトリフルオロロ酢酸ナトリウム0.05mol/L、テトラエチルアンモニウム−2−アントラセンスルホン酸0.25mol/Lを含む電解液を用いて、基体を陽極、SUS304を陰極、電解重合時間は15分間、電流密度を10mA/cm2として電解重合を行って、ポリピロール膜を形成し、耐食性導電被覆材を合計10枚作製した。 Next, a conductive polymer film containing a carboxylate anion and a sulfonate anion as dopants was formed by electrolytic polymerization. Using an electrolytic solution containing pure water as a solvent, 0.5 mol / L of pyrrole as a monomer, 0.05 mol / L of sodium trifluoroacetate as a supporting electrolyte, and 0.25 mol / L of tetraethylammonium-2-anthracenesulfonic acid. Then, the base was the anode, the SUS304 was the cathode, the electropolymerization time was 15 minutes, the current density was 10 mA / cm 2 , electropolymerization was performed to form a polypyrrole film, and a total of 10 corrosion-resistant conductive coating materials were produced.
実施例3
基体として黄銅板(銅75%−亜鉛25%)を用いた。黄銅板は大きさが20×30mm、厚さが0.2mmの圧延材であった。本基体をアセトンによる脱脂処理後、硫酸2.0mol/Lに調整された銅表面活性化溶液に1分間浸漬させて基体表面処理を行い、電解重合液中に供した。
Example 3
A brass plate (copper 75% -zinc 25%) was used as the substrate. The brass plate was a rolled material having a size of 20 × 30 mm and a thickness of 0.2 mm. The substrate was degreased with acetone, and then immersed in a copper surface activation solution adjusted to 2.0 mol / L of sulfuric acid for 1 minute to subject the substrate to a surface treatment, which was used in an electrolytic polymerization solution.
次に、電解重合法によってカルボン酸アニオンおよびスルホン酸アニオンをドーパントとして含む導電性高分子膜を形成した。溶媒を炭酸プロピレンとし、単量体としてエチレンジオキシチオフェン0.3mol/L、支持電解質としてテトラエチルアンモニウム−6−ヒドロキシ−2―ナフトエ酸0.05mol/L、テトラエチルアンモニウムアシッドブラック0.20mol/Lを含む電解液を用いて、基体を陽極、SUS304を陰極、電解重合時間は30分間、電流密度を5mA/cm2として電解重合を行って、ポリエチレンジオキシチオフェン膜を形成し、耐食性導電被覆材を合計10枚作製した。 Next, a conductive polymer film containing a carboxylate anion and a sulfonate anion as dopants was formed by electrolytic polymerization. Propylene carbonate as solvent, ethylenedioxythiophene 0.3 mol / L as monomer, tetraethylammonium-6-hydroxy-2-naphthoic acid 0.05 mol / L, tetraethylammonium acid black 0.20 mol / L as supporting electrolyte Electrolytic polymerization is performed using an electrolytic solution containing the substrate as an anode, SUS304 as a cathode, an electropolymerization time of 30 minutes, and a current density of 5 mA / cm 2 to form a polyethylene dioxythiophene film, and a corrosion-resistant conductive coating material. A total of 10 sheets were produced.
実施例4
基体としてリン脱酸銅板を用いた。リン脱酸銅板は大きさが20×30mm、厚さが0.2mmの圧延材であった。本基体を、水酸化ナトリウム10g/L、炭酸ナトリウム40g/L、ケイ酸ナトリウム10g/L、ドデシルベンゼンスルホン酸0.1g/Lをとなるように調整された溶液中に浸漬して脱脂後、塩酸1.0mol/Lに調整された銅表面活性化溶液に1分間浸漬させて基体表面処理を行い、電解重合液中に供した。
Example 4
A phosphorous deoxidized copper plate was used as the substrate. The phosphorous deoxidized copper plate was a rolled material having a size of 20 × 30 mm and a thickness of 0.2 mm. This substrate was degreased by immersing it in a solution adjusted to 10 g / L of sodium hydroxide, 40 g / L of sodium carbonate, 10 g / L of sodium silicate, and 0.1 g / L of dodecylbenzenesulfonic acid, The substrate surface treatment was performed by immersing in a copper surface activation solution adjusted to 1.0 mol / L of hydrochloric acid for 1 minute, and the resulting solution was supplied into an electrolytic polymerization solution.
次に、電解重合法によってカルボン酸アニオンおよびスルホン酸アニオンをドーパントとして含む導電性高分子膜を形成した。溶媒を純水とし、単量体としてアニリン0.5mol/L、支持電解質としてテトラエチルアンモニウム−3,5−ジヒドロキシ−2―ナフトエ酸0.10mol/L、テトラエチルアンモニウム−1,5-ナフトキノン−4−スルホン酸0.20mol/Lを含む電解液を用いて、基体を陽極、Auを陰極、銀/塩化銀(飽和KCl)を参照電極、電極電解重合時間は1時間、電解電圧を0.9V(vs銀/塩化銀参照電極)として定電位電解重合を行い、ポリアニリン膜を形成して、ポリアニリン膜を形成し、耐食性導電被覆材を合計10枚作製した。 Next, a conductive polymer film containing a carboxylate anion and a sulfonate anion as dopants was formed by electrolytic polymerization. The solvent is pure water, the monomer is aniline 0.5 mol / L, the supporting electrolyte is tetraethylammonium-3,5-dihydroxy-2-naphthoic acid 0.10 mol / L, tetraethylammonium-1,5-naphthoquinone-4- Using an electrolyte containing 0.20 mol / L of sulfonic acid, the base is an anode, Au is a cathode, silver / silver chloride (saturated KCl) is a reference electrode, the electrode electropolymerization time is 1 hour, and the electrolysis voltage is 0.9 V ( (vs silver / silver chloride reference electrode) was subjected to constant potential electropolymerization to form a polyaniline film, to form a polyaniline film, and a total of 10 corrosion-resistant conductive coating materials were produced.
実施例5
基体として白銅板(銅90%−ニッケル10%)を用いた。白酸銅板は大きさが20×30mm、厚さが0.2mmの圧延材であった。本基体をアセトンによる脱脂処理後、フッ化水素酸0.5mol/L、硝酸0.1mol/Lに調整された白銅表面活性化溶液に3分間浸漬させて基体表面処理を行い、電解重合液中に供した。
Example 5
A white copper plate (copper 90% -nickel 10%) was used as the substrate. The copper silicate plate was a rolled material having a size of 20 × 30 mm and a thickness of 0.2 mm. After degreasing the substrate with acetone, the substrate surface treatment was performed by immersing in a copper surface activation solution adjusted to 0.5 mol / L hydrofluoric acid and 0.1 mol / L nitric acid for 3 minutes. It was used for.
次に、電解重合法によってカルボン酸アニオンおよびスルホン酸アニオンをドーパントとして含む導電性高分子膜を形成した。溶媒を純水とし、単量体としてチオフェン0.3mol/L、支持電解質として2,5−ジヒドロキシ安息香酸ナトリウム0.04mol/L、アントラキノン−2−スルホン酸テトラエチルアンモニウム0.12mol/Lを含む電解液を用いて、基体を陽極、SUS304を陰極、電解重合時間は20分間、電流密度を7.5mA/cm2として電解重合を行って、ポリチオフェン膜を形成し、耐食性導電被覆材を合計10枚作製した。 Next, a conductive polymer film containing a carboxylate anion and a sulfonate anion as dopants was formed by electrolytic polymerization. Electrolyte containing pure water as solvent, 0.3 mol / L thiophene as monomer, 0.04 mol / L sodium 2,5-dihydroxybenzoate as support electrolyte, and 0.12 mol / L tetraethylammonium anthraquinone-2-sulfonate Using the solution, the substrate is the anode, the SUS304 is the cathode, the electropolymerization time is 20 minutes, the current density is 7.5 mA / cm 2 , the polythiophene film is formed, and a total of 10 corrosion-resistant conductive coating materials are formed. Produced.
実施例6
金属基体としてリン脱酸銅板を用いた。リン脱酸銅板は大きさが20×30mm、厚さが0.2mmの圧延材であった。本基体を、水酸化ナトリウム10g/L、炭酸ナトリウム40g/L、ケイ酸ナトリウム10g/L、ドデシルベンゼンスルホン酸0.1g/Lをとなるように調整された溶液中に浸漬して脱脂後、塩酸1.0mol/Lに調整された銅表面活性化溶液に1分間浸漬させて基体表面処理を行い、電解重合液中に供した。
Example 6
A phosphorous deoxidized copper plate was used as the metal substrate. The phosphorous deoxidized copper plate was a rolled material having a size of 20 × 30 mm and a thickness of 0.2 mm. This substrate was degreased by immersing it in a solution adjusted to 10 g / L of sodium hydroxide, 40 g / L of sodium carbonate, 10 g / L of sodium silicate, and 0.1 g / L of dodecylbenzenesulfonic acid, The substrate surface treatment was performed by immersing in a copper surface activation solution adjusted to 1.0 mol / L of hydrochloric acid for 1 minute, and the resulting solution was supplied into an electrolytic polymerization solution.
次に、電解重合法によってカルボン酸アニオンおよびスルホン酸アニオンをドーパントとして含む導電性高分子膜を形成した。溶媒を純水とし、単量体としてピロール0.3mol/L、支持電解質としてアントラキノン−2−カルボン酸アンモニウム0.03mol/L、アントラキノン−2,6−ジスルホン酸アンモニウム0.07mol/Lを含む電解液を用いて、基体を陽極、SUS304を陰極、電解重合時間は15分間、電流密度を10mA/cm2として電解重合を行って、ポリピロール膜を形成し、耐食性導電被覆材を合計10枚作製した。 Next, a conductive polymer film containing a carboxylate anion and a sulfonate anion as dopants was formed by electrolytic polymerization. Electrolysis containing pure water as solvent, pyrrole 0.3 mol / L as monomer, ammonium anthraquinone-2-carboxylate 0.03 mol / L, anthraquinone-2,6-disulfonate ammonium 0.07 mol / L as supporting electrolyte Using the solution, the substrate was the anode, the SUS304 was the cathode, the electropolymerization time was 15 minutes, the current density was 10 mA / cm 2 , and the polypyrrole film was formed to produce a total of 10 corrosion-resistant conductive coating materials. .
参考例1
実施例3において、電解液として、溶媒を炭酸プロピレンとし、単量体としてエチレンジオキシチオフェン0.3mol/L、支持電解質としてテトラエチルアンモニウム−6−ヒドロキシ−2―ナフトエ酸0.09mol/L、テトラエチルアンモニウムアシッドブラック0.01mol/Lを含むように調整した以外は、同様に実施して耐食性導電被覆材を10枚作製した。
Reference example 1
In Example 3, the electrolytic solution was propylene carbonate, the monomer was ethylenedioxythiophene 0.3 mol / L, the supporting electrolyte was tetraethylammonium-6-hydroxy-2-naphthoic acid 0.09 mol / L, tetraethyl Except having adjusted so that it might contain 0.01 mol / L of ammonium acid black, it implemented similarly and produced ten sheets of corrosion-resistant electrically conductive coating materials.
比較例2
実施例2において、支持電解質としてテトラエチルアンモニウム−2−アントラセンスルホン酸を加えずに、トリフルオロロ酢酸ナトリウム0.3mol/Lのみを含む電解液を用いた以外は、同様に実施して耐食性導電被覆材を10枚作製した。
Comparative Example 2
In Example 2, it was carried out in the same manner except that tetraethylammonium-2-anthracenesulfonic acid was not added as a supporting electrolyte and an electrolytic solution containing only 0.3 mol / L of sodium trifluoroacetate was used. 10 sheets were produced.
比較例3
特許文献3に記載の方法に従って、耐食性導電被覆材を作製した。まず、金属基体として黄銅板(銅75%−亜鉛25%)を用いた。黄銅板は大きさが20×30mm、厚さが0.2mmの圧延材であった。本基体をアセトン溶媒による脱脂処理後、NaOH40%水溶液(90℃)中で90分間浸漬し、基体表面に酸化被膜を形成させた。
Comparative Example 3
According to the method described in Patent Document 3, a corrosion-resistant conductive coating material was produced. First, a brass plate (copper 75% -zinc 25%) was used as a metal substrate. The brass plate was a rolled material having a size of 20 × 30 mm and a thickness of 0.2 mm. The substrate was degreased with an acetone solvent and then immersed in a NaOH 40% aqueous solution (90 ° C.) for 90 minutes to form an oxide film on the substrate surface.
次に、電解重合法によってカルボン酸アニオンをドーパントとして含む導電性高分子膜を形成した。溶媒を炭酸プロピレンとし、単量体としてエチレンジオキシチオフェン0.3mol/L、支持電解質としてテトラエチルアンモニウム−6−ヒドロキシ−2―ナフトエ酸0.9mol/Lを含む電解液を用いて、基体を陽極、SUS304を陰極、電解重合時間は15分間、電流密度を5mA/cm2として電解重合を行い、ポリエチレンジオキシチオフェン膜を形成した。 Next, a conductive polymer film containing a carboxylic acid anion as a dopant was formed by electrolytic polymerization. The substrate was anoded using an electrolyte containing propylene carbonate as the monomer, ethylenedioxythiophene 0.3 mol / L as the monomer, and tetraethylammonium-6-hydroxy-2-naphthoic acid 0.9 mol / L as the supporting electrolyte. Then, SUS304 was used as the cathode, the electropolymerization time was 15 minutes, and the current density was 5 mA / cm 2 , and the electropolymerization was performed to form a polyethylenedioxythiophene film.
続けて、電解重合法によって緻密な導電性高分子膜を形成した。溶媒を炭酸プロピレンとし、単量体としてエチレンジオキシチオフェン0.20mol/L、支持電解質としてテトラエチルアンモニウム−トリフルオロメタンスルホン酸0.9mol/Lを含む電解液を用い、カルボン酸アニオンをドーパントとして含む導電性高分子膜が形成された基体を陽極、Ptを陰極、電解重合時間は15分間、電流密度を5mA/cm2として電解重合を行い、ポリエチレンジオキシチオフェン膜を形成し、耐食性導電被覆材を10枚作製した。 Subsequently, a dense conductive polymer film was formed by electrolytic polymerization. Conductivity containing propylene carbonate as solvent, ethylenedioxythiophene as a monomer 0.20 mol / L, electrolyte containing tetraethylammonium-trifluoromethanesulfonic acid 0.9 mol / L as a supporting electrolyte, and carboxylate anion as a dopant The base on which the conductive polymer film is formed is the anode, Pt is the cathode, the electropolymerization time is 15 minutes, the current density is 5 mA / cm 2 , and the polyethylenedioxythiophene film is formed, and the corrosion-resistant conductive coating material is formed. Ten sheets were produced.
比較例4
実施例4において、支持電解質としてテトラエチルアンモニウム−1,5-ナフトキノン−4−スルホン酸の代わりに、テトラエチルアンモニウムヘキサフルオロリン酸を用いた以外は、同様に実施して耐食性導電被覆材を10枚作製した。
Comparative Example 4
In Example 4, ten pieces of corrosion-resistant conductive coating materials were produced in the same manner except that tetraethylammonium hexafluorophosphoric acid was used instead of tetraethylammonium-1,5-naphthoquinone-4-sulfonic acid as the supporting electrolyte. did.
比較例5
特許文献3に記載の方法に従って、耐食性導電被覆材を作製した。まず、金属基体として白銅板(銅90%−ニッケル10%)を用いた。白銅板は大きさが20×30mm、厚さが0.2mmの圧延材であった。本基体をアセトン溶媒による脱脂処理後、NaOH40%水溶液(90℃)中で90分間浸漬し、基体表面に酸化被膜を形成させた。
Comparative Example 5
According to the method described in Patent Document 3, a corrosion-resistant conductive coating material was produced. First, a white copper plate (copper 90% -nickel 10%) was used as a metal substrate. The white copper plate was a rolled material having a size of 20 × 30 mm and a thickness of 0.2 mm. The substrate was degreased with an acetone solvent and then immersed in a NaOH 40% aqueous solution (90 ° C.) for 90 minutes to form an oxide film on the substrate surface.
次に、電解重合法によってカルボン酸アニオンをドーパントとして含む導電性高分子膜を形成した。溶媒をアセトニトリルとし、単量体としてチオフェン0.3mol/L、支持電解質としてテトラエチルアンモニウム−2,5−ジヒドロキシ安息香酸0.15mol/Lを含む電解液を用いて、基体を陽極、SUS304を陰極、電解重合時間は30分間、電流密度を2mA/cm2として電解重合を行い、ポリチオフェン膜を形成した。 Next, a conductive polymer film containing a carboxylic acid anion as a dopant was formed by electrolytic polymerization. A solvent is acetonitrile, an electrolyte containing 0.3 mol / L of thiophene as a monomer, and 0.15 mol / L of tetraethylammonium-2,5-dihydroxybenzoic acid as a supporting electrolyte, a substrate as an anode, SUS304 as a cathode, Electropolymerization was carried out for 30 minutes at a current density of 2 mA / cm 2 to form a polythiophene film.
続けて、電解重合法によって緻密な導電性高分子膜を形成した。溶媒を純水とし、単量体としてチオフェン0.20mol/L、支持電解質としてアントラキノン−2−スルホン酸テトラエチルアンモニウム0.1mol/Lを含む電解液を用い、カルボン酸アニオンをドーパントとして含む導電性高分子膜が形成された基体を陽極、Ptを陰極、電解重合時間は1時間、電流密度を5mA/cm2として電解重合を行い、ポリチオフェン膜を形成し、耐食性導電被覆材を10枚作製した。 Subsequently, a dense conductive polymer film was formed by electrolytic polymerization. The solvent is pure water, an electrolysis solution containing 0.20 mol / L of thiophene as a monomer and 0.1 mol / L of anthraquinone-2-sulfonic acid tetraethylammonium as a supporting electrolyte, and a conductive high ion containing a carboxylate anion as a dopant. The substrate on which the molecular film was formed was the anode, Pt was the cathode, the electropolymerization time was 1 hour, the current density was 5 mA / cm 2 , the electropolymerization was performed to form the polythiophene film, and 10 corrosion-resistant conductive coating materials were produced.
比較例6
実施例6において、支持電解質としてアントラキノン−2−カルボン酸アンモニウムの代わりにテトラエチルアンモニウムテトラフロオロボレート、アントラキノン−2,6−ジスルホン酸アンモニウムの代わりに過塩素酸アンモニウムを用いた以外は、同様に実施した結果、銅の溶解反応によってポリピロール膜を形成することはできなかった。
Comparative Example 6
The same procedure as in Example 6 was carried out except that tetraethylammonium tetrafluoroborate was used instead of ammonium anthraquinone-2-carboxylate as the supporting electrolyte, and ammonium perchlorate was used instead of ammonium anthraquinone-2,6-disulfonate. As a result, a polypyrrole film could not be formed by a copper dissolution reaction.
防食性および導電性評価
このようにして作製した実施例2〜6、参考例1および比較例2〜5の耐食性導電被覆材に対して、硫酸100g/Lに調整され、浴温65℃に保持し空気攪拌された腐食水溶液中に90日間の浸漬試験を実施した。試験終了後、硫酸水溶液に含まれる金属基体のイオン濃度をシーケンシャル形高周波プラズマ発光分析装置によって測定し、防食性を比較した結果を表1に示す。また集電特性を図るために、図2に示した接触抵抗測定法によって、負荷荷重10kg/cm2における初期抵抗と浸漬試験実施後の比較を行った結果を表3に示す。
Corrosion-proof and conductivity evaluation With respect to the corrosion-resistant conductive coating materials of Examples 2 to 6, Reference Example 1 and Comparative Examples 2 to 5 prepared as described above, sulfuric acid was adjusted to 100 g / L and the bath temperature was maintained at 65 ° C. A 90-day immersion test was carried out in a corrosive aqueous solution that was stirred with air. After the test is completed, the ion concentration of the metal substrate contained in the sulfuric acid aqueous solution was measured with a sequential high-frequency plasma emission analyzer, and the results of comparing the anticorrosion properties are shown in Table 1. Table 3 shows the result of comparison between the initial resistance at a load of 10 kg / cm 2 and the implementation after the immersion test by the contact resistance measurement method shown in FIG.
また、このようにして作製した実施例2〜6、参考例1および比較例2〜5の耐食性導電被覆材に対して、塩酸3.0mol/Lに調整され、浴温30℃に保持し空気攪拌された腐食水溶液中に90日間の浸漬試験を実施した。試験終了後、塩酸水溶液に含まれる金属基体のイオン濃度をシーケンシャル形高周波プラズマ発光分析装置によって測定し、防食性を比較した結果を表2に示す。また集電特性を図るために、図2に示した接触抵抗測定法によって、負荷荷重10kg/cm2における初期抵抗と浸漬試験実施後の比較を行った結果を表4に示す。 Moreover, with respect to the corrosion-resistant conductive coating materials of Examples 2 to 6, Reference Example 1 and Comparative Examples 2 to 5 produced in this way, hydrochloric acid was adjusted to 3.0 mol / L, and the bath temperature was maintained at 30 ° C. and air A 90-day immersion test was carried out in the stirred corrosive aqueous solution. Table 2 shows the results obtained by measuring the ion concentration of the metal substrate contained in the hydrochloric acid aqueous solution with a sequential high-frequency plasma emission spectrometer after the test, and comparing the corrosion resistance. Table 4 shows the result of comparison between the initial resistance at a load of 10 kg / cm 2 and after the immersion test by the contact resistance measurement method shown in FIG.
燃料電池用セパレータの評価
プレス加工にてガス流路を形成した0.1mm厚の銅箔に、実施例5および比較例5に記載の方法により、ポリチオフェン膜を成膜させて固体高分子形燃料電池用セパレータを製造した。両極に触媒を担持した固体電解質膜、ガス拡散電極、前述のセパレータを用いて単電池を組み立て、燃料として高純度水素ガスおよび空気を用いて発電を行い、I−V特性を調べた。続いて、1000時間の連続発電試験を実行した後に同様にI−V特性を調べた結果を図3に示した。
Evaluation of Fuel Cell Separator A polythiophene film was formed on a 0.1 mm thick copper foil having a gas flow path formed by press working by the method described in Example 5 and Comparative Example 5 to obtain a solid polymer fuel A battery separator was produced. A cell was assembled using a solid electrolyte membrane carrying a catalyst on both electrodes, a gas diffusion electrode, and the separator described above, and power generation was performed using high-purity hydrogen gas and air as fuel, and IV characteristics were examined. Subsequently, the results of examining the IV characteristics in the same manner after the continuous power generation test for 1000 hours was shown in FIG.
その表1の結果によれば、本発明にかかる実施例2〜6の各耐食性導電被覆材は、浸漬試験90日後においても全く変化することなく基体を保護し、酸性雰囲気下でも優れた防食性効果を有することが認められた。これに対し、同様に浸漬試験を行った比較例2、4で作製した材料は、基体の腐食によって導電性高分子膜の剥離が確認された。 According to the results in Table 1, each of the corrosion-resistant conductive coating materials of Examples 2 to 6 according to the present invention protected the substrate without any change even after 90 days of the immersion test, and excellent corrosion resistance even in an acidic atmosphere. It was found to have an effect. On the other hand, peeling of the conductive polymer film was confirmed in the materials produced in Comparative Examples 2 and 4 in which the immersion test was similarly performed due to corrosion of the substrate.
その表2の結果によれば、本発明にかかる実施例2〜6の各耐食性導電被覆材は、浸漬試験90日後においても全く変化することなく基体を保護し、酸性ハロゲン雰囲気下でも優れた防食性効果を有することが認められた。これに対し、同様に浸漬試験を行った比較例2、4で作製した材料は、基体の腐食によって導電性高分子膜の剥離が確認された。 According to the results of Table 2, each of the corrosion-resistant conductive coating materials of Examples 2 to 6 according to the present invention protected the substrate without any change even after 90 days of immersion test, and excellent corrosion protection even in an acidic halogen atmosphere. It was found to have sexual effects. On the other hand, peeling of the conductive polymer film was confirmed in the materials produced in Comparative Examples 2 and 4 in which the immersion test was similarly performed due to corrosion of the substrate.
表3の結果によれば、本発明にかかる実施例2〜6の各耐食性導電被覆材は、浸漬試験90日後においても良好な接触抵抗を保持し、優れた集電特性を有することが認められた。これに対し、同様に浸漬試験を行った比較例2、4で作製した被覆材は、基体の腐食も時間とともに進行し、90日後には接触抵抗が1000mΩ・cm2以上となり、導電特性は消失していた。比較例3,5で作製した材料においては、表1の結果から耐食性は良好なものの、導電性特性は本発明による耐食性導電被覆材に比べて導電性特性が比べて劣ることがわかった。 According to the results in Table 3, it is recognized that each of the corrosion-resistant conductive coating materials of Examples 2 to 6 according to the present invention retains good contact resistance even after 90 days of immersion test and has excellent current collecting characteristics. It was. On the other hand, in the coating materials prepared in Comparative Examples 2 and 4 in which the immersion test was conducted in the same manner, the corrosion of the substrate also progressed with time, and after 90 days, the contact resistance became 1000 mΩ · cm 2 or more, and the conductive characteristics disappeared. Was. In the materials prepared in Comparative Examples 3 and 5, it was found from the results in Table 1 that the corrosion characteristics were good, but the conductivity characteristics were inferior to the corrosion resistance conductive coating material according to the present invention.
表4の結果によれば、本発明にかかる実施例2〜6の各耐食性導電被覆材は、浸漬試験90日後においても良好な接触抵抗を保持し、優れた集電特性を有することが認められた。これに対し、同様に浸漬試験を行った比較例2、4で作製した被覆材は、基体の腐食も時間とともに進行し、90日後には接触抵抗が1000mΩ・cm2以上となり、導電特性は消失していた。比較例3,5で作製した材料においては、表1の結果から耐食性は良好なものの、導電性特性は本発明による耐食性導電被覆材に比べて導電性特性が比べて劣ることがわかった。 According to the results of Table 4, it is recognized that each of the corrosion-resistant conductive coating materials of Examples 2 to 6 according to the present invention retains good contact resistance even after 90 days of immersion test and has excellent current collecting characteristics. It was. On the other hand, in the coating materials prepared in Comparative Examples 2 and 4 in which the immersion test was conducted in the same manner, the corrosion of the substrate also progressed with time, and after 90 days, the contact resistance became 1000 mΩ · cm 2 or more, and the conductive characteristics disappeared. Was. In the materials prepared in Comparative Examples 3 and 5, it was found from the results in Table 1 that the corrosion characteristics were good, but the conductivity characteristics were inferior to the corrosion resistance conductive coating material according to the present invention.
図3によれば、実施例5のI−V特性曲線は良好な発電特性を示したが、比較例5では実施例5に比べて耐食導電被覆材料の抵抗が僅かに高いために、取り出せる電流密度が若干小さくなることがわかった。また、1000時間の連続発電試験を実施後のI−V特性曲線を比較すると、実施例5において性能の劣化はほとんど見られず、耐食導電被覆材料が良好な集電性能が維持され、優れた発電特性を確認した。それに対して比較例5では、耐食導電被覆材料の抵抗が高くなる傾向にあり、その影響により集電性能の劣化し、発電特性が大きく低下した。 According to FIG. 3, the IV characteristic curve of Example 5 showed good power generation characteristics. However, in Comparative Example 5, the resistance of the corrosion-resistant conductive coating material was slightly higher than that in Example 5, so that the current that can be extracted was It was found that the density was slightly reduced. Further, when comparing the IV characteristic curves after the continuous power generation test for 1000 hours, the performance was hardly deteriorated in Example 5, and the current collecting performance of the corrosion-resistant conductive coating material was maintained and excellent. The power generation characteristics were confirmed. On the other hand, in Comparative Example 5, the resistance of the corrosion-resistant conductive coating material tends to increase, and due to the influence, the current collecting performance is deteriorated, and the power generation characteristics are greatly reduced.
本発明の耐食性導電被覆材は、めっき装置の給電ロール、燃料電池用金属セパレータを主たる用途とするが、電気接点、端子、電解用陽極などへ好適に使用できる。 The corrosion-resistant conductive coating material of the present invention is mainly used for a power supply roll of a plating apparatus and a metal separator for a fuel cell, but can be suitably used for an electrical contact, a terminal, an electrolytic anode, and the like.
1 銅基体
2 カルボン酸銅粒子
3 カルボン酸アニオンがドープされた導電性高分子粒子
4 スルホン酸アニオンがドープされた導電性高分子粒子
11 負荷荷重装置
12 金電極
13 カーボン電極
14 導電性高分子被覆材
DESCRIPTION OF
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008011122A JP5388162B2 (en) | 2008-01-22 | 2008-01-22 | Method for producing corrosion-resistant conductive coating material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008011122A JP5388162B2 (en) | 2008-01-22 | 2008-01-22 | Method for producing corrosion-resistant conductive coating material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009176447A JP2009176447A (en) | 2009-08-06 |
| JP5388162B2 true JP5388162B2 (en) | 2014-01-15 |
Family
ID=41031350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008011122A Expired - Fee Related JP5388162B2 (en) | 2008-01-22 | 2008-01-22 | Method for producing corrosion-resistant conductive coating material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5388162B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105551801B (en) * | 2011-12-19 | 2018-12-21 | 帝化株式会社 | electrolytic capacitor and its manufacturing method |
| JP6538630B2 (en) * | 2015-11-09 | 2019-07-03 | 信越化学工業株式会社 | Conductive material and substrate |
| CN112795866A (en) * | 2021-01-18 | 2021-05-14 | 浙江贝亚特新材料股份有限公司 | Aluminum material and preparation method thereof |
| CN115132981B (en) * | 2022-04-07 | 2025-08-05 | 深圳市沃伦特新能源有限公司 | A binary doped iron-based sodium fluorophosphate positive electrode material and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3649526B2 (en) * | 1996-07-18 | 2005-05-18 | 日東電工株式会社 | Conductive polyaniline composition and solid electrolytic capacitor using the same as solid electrolyte |
| JP2007073232A (en) * | 2005-09-05 | 2007-03-22 | Japan Carlit Co Ltd:The | Fuel cell separator and method for producing the same |
| JP2007250466A (en) * | 2006-03-17 | 2007-09-27 | Japan Carlit Co Ltd:The | Conductive polymer coating and metal coating method |
-
2008
- 2008-01-22 JP JP2008011122A patent/JP5388162B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009176447A (en) | 2009-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Biallozor et al. | Conducting polymers electrodeposited on active metals | |
| Fomo et al. | Electrochemical polymerization | |
| Fang et al. | A study on mechanism of corrosion protection of polyaniline coating and its failure | |
| Sazou et al. | Formation of conducting polyaniline coatings on iron surfaces by electropolymerization of aniline in aqueous solutions | |
| Tüken et al. | The use of polyindole for prevention of copper corrosion | |
| AU2010202419B2 (en) | Improved Electrocatalyst, Fuel Cell Cathode and Fuel Cell | |
| Sakmeche et al. | Usefulness of aqueous anionic micellar media for electrodeposition of poly-(3, 4-ethylenedioxythiophene) films on iron, mild steel and aluminium | |
| JP4315038B2 (en) | Solid electrolytic capacitor | |
| WO2006075551A1 (en) | Solid electrolytic capacitor and method for manufacturing same | |
| CN105937037B (en) | Application of the anti-corrosion electrode in the selectivity of Organic electro-synthesis reaction and yield is improved | |
| JP5388162B2 (en) | Method for producing corrosion-resistant conductive coating material | |
| Kamaraj et al. | Electrosysnthesis of poly (aniline-co-m-amino benzoic acid) for corrosion protection of steel | |
| Di Girolamo et al. | Electrodeposition as a versatile preparative tool for perovskite photovoltaics: Aspects of metallization and selective contacts/active layer formation | |
| Bhandari et al. | Enhancement of corrosion protection efficiency of iron by poly (aniline-co-amino-naphthol-sulphonic acid) nanowires coating in highly acidic medium | |
| JP2004139951A (en) | Separator for fuel cell and its manufacturing method | |
| JP2008121087A (en) | Corrosion-resistant conductive coating material and method for producing the same | |
| Huerta-Vilca et al. | Aspects of polyaniline electrodeposition on aluminium | |
| Zhu et al. | Electrochemical synthesis of poly (3, 4-ethylenedioxythiophene) on stainless steel and its corrosion inhibition performance | |
| JP2007250466A (en) | Conductive polymer coating and metal coating method | |
| CN111630618A (en) | Electrolytic capacitor and method of making the same | |
| JP4840966B2 (en) | Conductive polymer coated metal material | |
| Shahhosseini et al. | Electrochemical synthesis of polymer based on 4-(2-thienyl) benzenamine in aqueous solutions: Electrochemical properties, characterization and application | |
| JP2007073232A (en) | Fuel cell separator and method for producing the same | |
| Gupta et al. | Synthesis of processible doped polyaniline‐polyacrylic acid composites | |
| Ali et al. | Electrodeposition and corrosion protection properties of conducting PEDOT coatings on steel electrode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101112 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121203 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130128 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130507 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130516 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131002 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131003 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5388162 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R370 | Written measure of declining of transfer procedure |
Free format text: JAPANESE INTERMEDIATE CODE: R370 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |