JP5584909B2 - Connection structure - Google Patents
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- JP5584909B2 JP5584909B2 JP2009266365A JP2009266365A JP5584909B2 JP 5584909 B2 JP5584909 B2 JP 5584909B2 JP 2009266365 A JP2009266365 A JP 2009266365A JP 2009266365 A JP2009266365 A JP 2009266365A JP 5584909 B2 JP5584909 B2 JP 5584909B2
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Description
本発明は、電子機器の接続に用いられる接続構造体に関する。
The present invention relates is that connection structure used for connecting the electronic device.
携帯電話に代表される電子機器の小型化、軽量化、高機能化の流れは目覚しく、これに追従して、高密度実装技術も急速な進歩を続けている。
部品を基板中に内蔵したり、複数のLSIを1パッケージ化したり、限られた容積を有効利用するため、多様な実装技術が開発されている。一方、高密度化が進めば進むほど、基板内部やパッケージ内部に組み込まれた部品のはんだ接続部は、後工程で熱処理を受ける回数が多くなり、部品と封止樹脂の隙間で起こる、はんだ再溶融によるショート問題が顕在化してきている。
その為、基板内部やパッケージ内部に組み込まれた部品の接続において、後工程で複数回の熱処理を受けても、溶融しない鉛フリーはんだ材料の開発が望まれている。
The trend toward miniaturization, weight reduction, and high functionality of electronic devices typified by mobile phones is remarkable, and following this trend, high-density packaging technology continues to make rapid progress.
Various mounting techniques have been developed in order to incorporate components in a substrate, package a plurality of LSIs in one package, and effectively use a limited volume. On the other hand, as the density increases, the solder joints of components built into the board or package are more frequently subjected to heat treatment in the subsequent process, and the solder re-use that occurs in the gap between the component and the sealing resin occurs. The short problem due to melting has become apparent.
Therefore, there is a demand for the development of a lead-free solder material that does not melt even if it is subjected to multiple heat treatments in the subsequent process for connecting components incorporated in the substrate or package.
本発明者等は、鉛フリーはんだのリフロー熱処理条件で溶融接合でき、接合後は、同じ熱処理条件では溶融しない鉛フリーはんだ材料を提案した(以下、特許文献1参照)。
鉛フリーはんだのリフロー熱処理条件とは、代表的なSn−3.0Ag−0.5Cu(融点217℃)で、はんだ接続する場合の一般的なリフロー熱処理条件であり、ピーク温度240〜260℃の範囲のことである。
該はんだ材料の導電性フィラーは、Cu主成分の第1の金属粒子とリフロー熱処理において溶融する第2の金属粒子との混合体からなり、リフロー熱処理において、新たな安定合金相を形成することで、再度のリフロー熱処理においても、溶融しない特徴を有するものであった。
該はんだ材料では、リフロー熱処理において、第1の金属粒子と溶融した第2の金属粒子の熱拡散反応を促進させる観点から、接触面積を大きくする必要があり、平均粒径で6μm以下の微粒子が使用されている。
The present inventors have proposed a lead-free solder material that can be melt-bonded under reflow heat treatment conditions for lead-free solder and that does not melt under the same heat-treatment conditions after bonding (see Patent Document 1 below).
The reflow heat treatment conditions for lead-free solder are typical Sn-3.0Ag-0.5Cu (melting point: 217 ° C), and are general reflow heat treatment conditions for solder connection, and have a peak temperature of 240-260 ° C. It is a range.
The conductive filler of the solder material is composed of a mixture of the first metal particles mainly composed of Cu and the second metal particles that melt in the reflow heat treatment, and forms a new stable alloy phase in the reflow heat treatment. Even in the reflow heat treatment again, it has a feature that it does not melt.
In the solder material, it is necessary to increase the contact area from the viewpoint of promoting the thermal diffusion reaction between the first metal particles and the melted second metal particles in the reflow heat treatment, and fine particles having an average particle diameter of 6 μm or less are formed. It is used.
これに対し、平均粒径30μmのCu粒子とSn粒子の混合体を導電性フィラーとするはんだ材料が提案されている(以下、特許文献2参照)。
該はんだ材料は、熱処理により、Cu6Sn5を含むCuSn化合物とCu粒子を有する接続部により接続され、且つCu粒子同士は、該CuSn化合物で連結されていることを特徴としている。
しかしながら、該はんだ材料において、Cu界面に形成されるCu6Sn5は、接続内部で粗大な晶出物として成長するため、接合強度等の機械的性質が劣化し易く、接続信頼性に問題があった。
また、Cu粒子は、酸化凝集し易く、吸湿するとより強固に凝集するので、保存安定性においても問題があった。
On the other hand, a solder material using a mixture of Cu particles and Sn particles having an average particle size of 30 μm as a conductive filler has been proposed (see Patent Document 2 below).
The solder material is characterized in that it is connected by a heat treatment to a CuSn compound containing Cu 6 Sn 5 and a connection part having Cu particles, and the Cu particles are connected by the CuSn compound.
However, in the solder material, Cu 6 Sn 5 formed at the Cu interface grows as a coarse crystallized substance inside the connection, so that mechanical properties such as bonding strength are likely to deteriorate, and there is a problem in connection reliability. there were.
In addition, Cu particles tend to oxidize and agglomerate and agglomerate more strongly when moisture is absorbed. Therefore, there is a problem in storage stability.
本発明は、上記問題を鑑みて成されたものであり、本発明が解決しようとする課題は、鉛フリーはんだのリフロー熱処理条件で溶融接合でき、接合後は、後工程で複数回の熱処理を受けても溶融しない接続信頼性の優れた鉛フリーはんだ接続構造体を提供することである。 The present invention has been made in view of the above problems, and the problem to be solved by the present invention is that it can be melt-bonded under reflow heat treatment conditions of lead-free solder, and after the bonding, a plurality of heat treatments are performed in a subsequent process. It is to provide a lead-free solder connection structure having excellent connection reliability that does not melt even when it is received.
本発明者等は、上記課題を解決すべく鋭意検討し、実験を重ねた結果、本発明を成すに至った。
[1]Cu合金粒子100質量部、及びSn粒子又はSn合金粒子30〜550質量部 からなる金属フィラーであって、該Cu合金粒子が、Cu及びIn、並びにAg 、Sn、及びBiからなる群から選ばれる一種以上の金属を含み、かつ、該Cu 合金粒子の平均粒径が、10〜30μmであることを特徴とする前記金属フィラ ー。
As a result of intensive studies to solve the above-mentioned problems and repeated experiments, the present inventors have reached the present invention .
[1] A metal filler composed of 100 parts by mass of Cu alloy particles and 30 to 550 parts by mass of Sn particles or Sn alloy particles, wherein the Cu alloy particles are composed of Cu and In, and Ag, Sn, and Bi. The metal filler is characterized in that it contains one or more metals selected from the group consisting of Cu alloy particles and the Cu alloy particles have an average particle size of 10 to 30 μm.
[2]前記Cu合金粒子は、Ag5〜15質量%、Bi2〜8質量%、Cu49〜81質量%、In2〜8質量%、及びSn10〜20質量%を含む、前記[1]に記載の金属フィラー。 [2] The metal according to [1], wherein the Cu alloy particles contain 5 to 15 mass% Ag, 2 to 8 mass% Bi, 49 to 81 mass% Cu, 2 to 8 mass% In, and 10 to 20 mass% Sn. Filler.
[3]前記Cu合金粒子が、示差走査熱量測定(DSC)で発熱ピークとして観測される準安定合金相を230〜300℃に少なくとも1つと、吸熱ピークとして観測される融点を480〜530℃に少なくとも1つ有する、前記[1]又は[2]に記載の金属フィラー。 [3] The Cu alloy particles have at least one metastable alloy phase observed as an exothermic peak in differential scanning calorimetry (DSC) at 230 to 300 ° C., and a melting point observed as an endothermic peak at 480 to 530 ° C. The metal filler according to [1] or [2], which has at least one.
[4]前記Cu合金粒子が、Cu−Sn合金相又はCu−In合金相の結晶粒を含み、これらの合金相の界面にAg又はBiが存在する、前記[1]〜[3]のいずれかに記載の金属フィラー。 [4] Any of the above [1] to [3], wherein the Cu alloy particles include crystal grains of a Cu—Sn alloy phase or a Cu—In alloy phase, and Ag or Bi is present at an interface between these alloy phases. Metal filler according to crab.
[5]前記[1]〜[4]のいずれかに記載の金属フィラー、及びフラックス成分を含有するはんだペースト。 [5] A solder paste containing the metal filler according to any one of [1] to [4] and a flux component.
[6]前記[5]に記載のはんだペーストをリフロー熱処理して得られる接続構造体。 [6] A connection structure obtained by reflow heat treatment of the solder paste according to [5].
すなわち、本発明は、以下のとおりのものである:
[7]鉛フリーはんだである導電領域中に成分としてCuを含む粒子を有する接続構造体であって、Cu−Sn−Inを含む合金相が少なくとも該Cuを含む粒子の界面に存在し、該Cuを含む粒子の平均粒径が、2〜28μmであり、且つ、粒度分布のピーク位置が、5〜25μmであることを特徴とする接続構造体。
That is, the present invention is as follows:
[7] A connection structure having particles containing Cu as a component in a conductive region which is a lead-free solder, wherein an alloy phase containing Cu-Sn-In is present at the interface of at least the particles containing Cu, An average particle diameter of particles containing Cu is 2 to 28 μm, and a peak position of a particle size distribution is 5 to 25 μm.
本発明の金属フィラー、及びそれを含むはんだペーストをリフロー熱処理して得られる接続構造体は、ボイドが少なく、後工程で複数回の鉛フリーはんだのリフロー熱処理を受けても、はんだ接続部が溶融しないので、接続信頼性に優れるという効果を有する。 The connection structure obtained by reflow heat treatment of the metal filler of the present invention and the solder paste containing the same has few voids, and the solder connection portion is melted even when subjected to reflow heat treatment of lead-free solder multiple times in the subsequent process. Therefore, the connection reliability is excellent.
本実施形態の金属フィラーは、Cu合金粒子100質量部、及びSn粒子又はSn合金粒子30〜550質量部からなる金属フィラーであって、該Cu合金粒子が、Cu及びIn、並びにAg、Sn、及びBiからなる群から選ばれる一種以上の金属を含み、かつ、該Cu合金粒子の平均粒径が、10〜30μmであることを特徴とする。 The metal filler of this embodiment is a metal filler composed of 100 parts by mass of Cu alloy particles and 30 to 550 parts by mass of Sn particles or Sn alloy particles, and the Cu alloy particles are Cu and In, and Ag, Sn, And one or more metals selected from the group consisting of Bi, and the Cu alloy particles have an average particle size of 10 to 30 μm.
金属フィラーの好適組成を例示すると、Sn粒子又はSn合金粒子の混合比は、耐熱性の観点から、550質量部以下であり、一方、初期の接合状態が向上するという観点から、下限は、30質量部以上である。
また、前記Cu合金粒子の成分比としては、Sn又はSn合金粒子との熱拡散による合金化の観点から、Cu及びInを含み、更にAg、Sn、及びBiから成る群から選ばれる一種以上の金属を含む。前記Cu合金粒子は、具体的には、Ag5〜15質量%、Bi2〜8質量%、Cu49〜81質量%、In2〜8質量%、Sn10〜20質量%を含むことが好ましい。
When the preferred composition of the metal filler is exemplified, the mixing ratio of Sn particles or Sn alloy particles is 550 parts by mass or less from the viewpoint of heat resistance, while the lower limit is 30 from the viewpoint of improving the initial bonding state. More than part by mass.
The component ratio of the Cu alloy particles includes Cu and In and one or more selected from the group consisting of Ag, Sn, and Bi from the viewpoint of alloying by thermal diffusion with Sn or Sn alloy particles. Contains metal. Specifically, the Cu alloy particles preferably contain 5 to 15% by mass of Ag, 2 to 8% by mass of Bi, 49 to 81% by mass of Cu, 2 to 8% by mass of In, and 10 to 20% by mass of Sn.
Cu合金粒子の粒子サイズは、平均粒径で10〜30μmの範囲である。平均粒径が10μm以上であると、粒子の比表面積が小さくなるため、フラックスとの反応が少ないので、ペーストの寿命が長くなり、リフロー熱処理においては、フラックスによる還元(粒子酸化膜除去)で発生するガスも少なくなるので、接続内部にボイドが発生し難くなり、一方、ペースト特性の観点から上限は30μm以下である。粒子サイズが大きくなると、粒子間の隙間が大きくなるので、粘着力が損なわれ易くなる。 The particle size of the Cu alloy particles is in the range of 10 to 30 μm as an average particle size. If the average particle size is 10 μm or more, the specific surface area of the particles will be small, so there will be little reaction with the flux, so the life of the paste will be extended, and in reflow heat treatment, it will occur due to reduction by flux (particle oxide film removal) Since less gas is generated, voids are less likely to occur inside the connection, while the upper limit is 30 μm or less from the viewpoint of paste characteristics. When the particle size is increased, the gap between the particles is increased, so that the adhesive force is easily impaired.
Sn粒子又はSn合金粒子の粒子サイズとしては、前記Cu合金粒子同様、フラックスとの反応性、ペースト特性の観点から、平均粒径で2〜30μmの範囲が好ましく、更に好ましくは、5〜30μmの範囲である。 As the particle size of the Sn particles or the Sn alloy particles, the average particle size is preferably in the range of 2 to 30 μm, more preferably 5 to 30 μm, from the viewpoint of the reactivity with the flux and the paste characteristics, like the Cu alloy particles. It is a range.
Cu合金粒子、及びSn粒子又はSn合金粒子の粒度分布は、ペースト用途に応じて定めることができる。例えば、スクリーン印刷用途では、版抜け性を重視して、粒度分布はブロードにするのが好ましく、ディスペンス用途では、吐出流動性を重視して、粒度分布はシャープにするのが好ましい。
また、前記Cu合金粒子は、示差走査熱量測定(DSC)で発熱ピークとして観測される準安定合金相を230〜300℃に少なくとも1つと、吸熱ピークとして観測される融点を480〜530℃に少なくとも1つ有していることが好ましい。示差走査熱量測定(DSC)における発熱は、新たな合金相が形成される際に発生する潜熱の検出であり、合金粒子に準安定合金相が存在することを示す。
The particle size distribution of Cu alloy particles and Sn particles or Sn alloy particles can be determined according to the paste application. For example, in screen printing applications, it is preferable to make the particle size distribution broader with an emphasis on plate slippage, and in dispensing applications, it is preferable to focus on ejection fluidity and make the particle size distribution sharper.
The Cu alloy particles have at least one metastable alloy phase observed as an exothermic peak in differential scanning calorimetry (DSC) at 230 to 300 ° C. and a melting point observed as an endothermic peak at least 480 to 530 ° C. It is preferable to have one. Heat generation in differential scanning calorimetry (DSC) is detection of latent heat generated when a new alloy phase is formed, and indicates that a metastable alloy phase is present in the alloy particles.
準安定合金相を有する合金粒子の製造法としては、急冷凝固法が好ましい。急冷凝固法による微粉末の製造法としては、水噴霧法、ガス噴霧法、遠心噴霧法等が挙げられ、粒子の酸素含有量を抑えることができる点から、ガス噴霧法、遠心噴霧法がより好ましい。
ガス噴霧法では、通常、窒素ガス、アルゴンガス、ヘリウムガス等の不活性ガスを使用することができるが、ガス噴霧時の線速を高くし、冷却速度を速くするため、比重の軽いヘリウムガスを用いることが好ましい。冷却速度は、500〜5000℃/秒の範囲であることが好ましい。遠心噴霧法では、回転ディスク上面に均一な溶融膜を形成する観点から、材質は、サイアロンであることが好ましく、ディスク回転速度は、6万〜12万rpmの範囲であることが好ましい。
As a method for producing alloy particles having a metastable alloy phase, a rapid solidification method is preferable. Examples of the method for producing fine powder by the rapid solidification method include a water spray method, a gas spray method, and a centrifugal spray method. From the viewpoint of suppressing the oxygen content of particles, the gas spray method and the centrifugal spray method are more preferable. preferable.
In the gas spraying method, inert gas such as nitrogen gas, argon gas, helium gas, etc. can usually be used, but helium gas with a low specific gravity is used to increase the linear velocity during gas spraying and increase the cooling rate. Is preferably used. The cooling rate is preferably in the range of 500 to 5000 ° C./second. In the centrifugal spray method, from the viewpoint of forming a uniform molten film on the upper surface of the rotating disk, the material is preferably sialon, and the disk rotation speed is preferably in the range of 60,000 to 120,000 rpm.
また、前記Cu合金粒子は、Cu−Sn合金相、又はCu−In合金相の結晶粒を含み、該合金相の界面にAg又はBiが存在することが好ましい。内部にCu−Sn合金相、Cu−In合金相等の反応性が高い準安定合金相を有することで、リフロー熱処理において、溶融したSn粒子、若しくはSn合金粒子との合金化を迅速に行うことができる。 The Cu alloy particles preferably include crystal grains of a Cu—Sn alloy phase or a Cu—In alloy phase, and Ag or Bi is preferably present at the interface of the alloy phase. By having a metastable alloy phase with high reactivity such as Cu—Sn alloy phase and Cu—In alloy phase inside, it is possible to rapidly alloy with molten Sn particles or Sn alloy particles in reflow heat treatment. it can.
本発明のはんだペーストは、金属フィラーとフラックス成分を含むことが好ましく、金属フィラーの含有率としては、ペースト特性の観点からはんだペースト100質量%に対し、84〜94質量%の範囲が好ましい。金属フィラーの含有率は、ペースト用途に応じて定めることができる。例えば、金属フィラーの含有率は、スクリーン印刷用途では、版抜け性を重視して、87〜91質量%の範囲が好ましく、より好ましくは、88〜90質量%の範囲であり、ディスペンス用途では、吐出流動性を重視して、85〜89質量%の範囲が好ましく、より好ましくは、86〜88質量%の範囲である。 The solder paste of the present invention preferably contains a metal filler and a flux component, and the content of the metal filler is preferably in the range of 84 to 94% by mass with respect to 100% by mass of the solder paste from the viewpoint of paste characteristics. The content rate of a metal filler can be defined according to a paste use. For example, the content of the metal filler is preferably in the range of 87 to 91% by mass, more preferably in the range of 88 to 90% by mass, with emphasis on plate slippage in screen printing applications, and in the dispensing application, In consideration of the discharge fluidity, the range of 85 to 89% by mass is preferable, and the range of 86 to 88% by mass is more preferable.
前記フラックス成分は、変性ロジン、溶剤、活性剤、チクソ剤を含むことが好ましい。フラックスは、金属フィラーの表面処理に最適で、リフロー熱処理時に金属フィラーの酸化膜を除去し、金属の溶融、及び熱拡散による合金化を促進する。フラックスとしては、公知の材料を使用することができる。 The flux component preferably contains a modified rosin, a solvent, an activator, and a thixotropic agent. The flux is optimal for the surface treatment of the metal filler, removes the oxide film of the metal filler during the reflow heat treatment, and promotes the melting of the metal and alloying by thermal diffusion. A known material can be used as the flux.
前記はんだペーストにおいて、電子デバイス等の搭載部品電極と基板電極とを接続する場合、鉛フリーはんだのリフロー熱処理条件において、前記Sn粒子又はSn合金粒子の融点以上の熱履歴が与えられると、該Sn粒子又はSn合金粒子は溶融し、Cu合金粒子を介して搭載部品電極と基板電極とを接合する。これにより金属間の熱拡散反応が加速的に進み、該Sn粒子又はSn合金粒子の融点よりも高融点の新たな安定合金相が形成され、Cu合金粒子を介して搭載部品電極と基板電極とを接続する接続構造体を形成する。
この新たな安定合金相の融点は、鉛フリーはんだのリフロー熱処理温度より高く、後工程で複数回の熱処理を受けても溶融しないので、はんだ再溶融によるショートを抑制することができる。
In the solder paste, when a mounting component electrode such as an electronic device is connected to a substrate electrode, if a thermal history equal to or higher than the melting point of the Sn particles or Sn alloy particles is given under reflow heat treatment conditions of lead-free solder, the Sn The particles or the Sn alloy particles are melted, and the mounted component electrode and the substrate electrode are joined via the Cu alloy particles. As a result, the thermal diffusion reaction between the metals proceeds at an accelerated rate, and a new stable alloy phase having a melting point higher than the melting point of the Sn particles or Sn alloy particles is formed. To form a connection structure.
The melting point of this new stable alloy phase is higher than the reflow heat treatment temperature of lead-free solder, and since it does not melt even when subjected to a plurality of heat treatments in the subsequent process, it is possible to suppress a short circuit due to solder remelting.
新たな安定合金相としては、接続信頼性の観点からCu−Sn系が好ましく、より好ましくは、Cu−Sn−Ni系、Cu−Sn−In系である。
Cu−Snの2元系では、Cu6Sn5が、接続内部で粗大な晶出物として成長するため、接合強度等の機械的性質が劣化し易いという問題がある。しかしながら、合金相にNi、In等が微量に存在すると、結晶粒を微細化するので、接続信頼性が改善される。合金相のNi、In等の成分比は、安定した合金相を形成する観点から5質量%以下が好ましく、より好ましくは、3質量%以下である。また、接続信頼性の改善効果を発現するには、成分比0.01%以上が好ましい。
The new stable alloy phase is preferably a Cu—Sn system from the viewpoint of connection reliability, and more preferably a Cu—Sn—Ni system or a Cu—Sn—In system.
In the Cu—Sn binary system, since Cu 6 Sn 5 grows as a coarse crystallized substance inside the connection, there is a problem that mechanical properties such as bonding strength are easily deteriorated. However, if a small amount of Ni, In, or the like is present in the alloy phase, the crystal grains are refined, so that the connection reliability is improved. The component ratio of Ni, In, etc. in the alloy phase is preferably 5% by mass or less, more preferably 3% by mass or less from the viewpoint of forming a stable alloy phase. Moreover, in order to express the connection reliability improvement effect, the component ratio is preferably 0.01% or more.
また、はんだペーストによる接続方法としては、基板電極にペーストを塗布した後に搭載部品を載せてリフロー熱処理で接続する方法や、搭載部品電極又は基板電極にペーストを塗布、リフロー熱処理にてバンプ形成後、部品と基板を合せて、再度リフロー熱処理で接続する方法等が挙げられる。 In addition, as a connection method using a solder paste, after applying the paste to the substrate electrode, placing the mounting component and connecting by reflow heat treatment, applying the paste to the mounting component electrode or the substrate electrode, forming the bump by reflow heat treatment, For example, the component and the substrate may be combined and connected again by reflow heat treatment.
また、本発明の接続構造体は、鉛フリーはんだである導電領域中に成分としてCuを含む粒子を有する接続構造体であって、Cu−Sn−Inを含む合金相が少なくとも該Cuを含む粒子の界面に存在し、該Cuを含む粒子の平均粒径が、2〜28μmであり、且つ、粒度分布のピーク位置が、5〜25μmであることを特徴とするものである。 Further, the connection structure of the present invention is a connection structure having particles containing Cu as a component in a conductive region which is a lead-free solder, wherein the alloy phase containing Cu-Sn-In contains at least the Cu. The average particle size of the particles containing Cu is 2 to 28 μm, and the peak position of the particle size distribution is 5 to 25 μm.
鉛フリーはんだである導電領域とは導電性を有する領域であれば特に限定されない。例えば、鉛フリーはんだのリフロー熱処理において、金属フィラーの溶融接合により形成される金属部分である。
該Cuを含む粒子とは、接続構造体の断面を出して、加速電圧10kV、倍率2000で、反射電子像を撮影した場合、最も濃く見える部分で、その粒径は、最長径と最短径の平均値であり、平均粒径は、300個以上の粒子の粒径データの平均値で、粒度分布のピーク位置は、同データのピーク値である。
The conductive region that is lead-free solder is not particularly limited as long as it is a conductive region. For example, in a reflow heat treatment of lead-free solder, it is a metal portion formed by fusion bonding of a metal filler.
The Cu-containing particles are the portions that appear darkest when a cross-section of the connection structure is taken out and a reflected electron image is taken at an acceleration voltage of 10 kV and a magnification of 2000. The average particle size is an average value of particle size data of 300 or more particles, and the peak position of the particle size distribution is a peak value of the same data.
以下、本発明を実施例によって具体的に説明する。
[実施例1]
(1)Cu合金粒子の製造
Cu6.5kg(純度99質量%以上)、Sn1.5kg(純度99質量%以上)、Ag1.0kg(純度99質量%以上)、Bi0.5kg(純度99質量%以上)、及びIn0.5kg(純度99質量%以上)を、黒鉛坩堝に入れ、99体積%以上のヘリウム雰囲気で、高周波誘導加熱装置により1400℃まで加熱、融解した。
次に、この溶融金属を坩堝の先端より、ヘリウムガス雰囲気の噴霧槽内に導入した後、坩堝先端付近に設けられたガスノズルから、ヘリウムガス(純度99体積%以上、酸素濃度0.1体積%未満、圧力2.5MPa)を噴出してアトマイズを行い、Cu合金粒子を作製した。この時の冷却速度は、2600℃/秒であった。
得られたCu合金粒子を走査型電子顕微鏡(日立製作所:S−3400N)で観察したところ球状であった。
Hereinafter, the present invention will be specifically described by way of examples.
[Example 1]
(1) Production of Cu alloy particles Cu 6.5 kg (purity 99 mass% or more), Sn 1.5 kg (purity 99 mass% or more), Ag 1.0 kg (purity 99 mass% or more), Bi 0.5 kg (purity 99 mass% or more) ), And 0.5 kg of In (purity 99% by mass or more) were placed in a graphite crucible and heated and melted to 1400 ° C. with a high-frequency induction heating apparatus in a helium atmosphere of 99% by volume or more.
Next, after this molten metal is introduced from the tip of the crucible into a spray tank in a helium gas atmosphere, helium gas (purity 99 vol% or more, oxygen concentration 0.1 vol%) is supplied from a gas nozzle provided near the crucible tip. And pressure was reduced to 2.5 MPa), and atomization was performed to prepare Cu alloy particles. The cooling rate at this time was 2600 ° C./second.
When the obtained Cu alloy particles were observed with a scanning electron microscope (Hitachi, Ltd .: S-3400N), they were spherical.
このCu合金粒子を気流式分級機(日清エンジニアリング:TC−15N)用いて、20μm設定で分級し、大粒子側を回収後、もう一度30μm設定で分級し、小粒子側を回収した。回収した合金粒子をレーザー回折式粒子径分布測定装置(HELOS&RODOS)で測定したところ平均粒径は、15.1μmであった。
次にCu合金粒子を示差走査熱量計(島津製作所:DSC−50)で、窒素雰囲気下、昇温速度10℃/分の条件で、40〜580℃の範囲において測定した。この結果得られたDSCチャートを図1に示す。図1に示すように、502℃、521℃で吸熱ピークが検出され、複数の融点から、複数の合金相の存在を確認することができた。また、258℃、282℃では発熱ピークが検出され、準安定合金相の存在を確認した。
The Cu alloy particles were classified using an airflow classifier (Nisshin Engineering: TC-15N) at a setting of 20 μm, the large particles were collected, and then classified again at a setting of 30 μm, and the small particles were collected. The collected alloy particles were measured with a laser diffraction particle size distribution analyzer (HELOS & RODOS), and the average particle size was 15.1 μm.
Next, Cu alloy particles were measured with a differential scanning calorimeter (Shimadzu Corporation: DSC-50) in a temperature range of 40 to 580 ° C. under a nitrogen atmosphere under a temperature rising rate of 10 ° C./min. The DSC chart obtained as a result is shown in FIG. As shown in FIG. 1, endothermic peaks were detected at 502 ° C. and 521 ° C., and the presence of a plurality of alloy phases could be confirmed from a plurality of melting points. Further, an exothermic peak was detected at 258 ° C. and 282 ° C., and the presence of a metastable alloy phase was confirmed.
次に合金粒子を樹脂包埋後、ミクロトームで切断し、内部構造を観察した。この結果得られた断面TEM(透過型電子顕微鏡)像を図2に示す。TEM−EDX(特性X線分析装置)により、合金構造を解析した結果、合金粒子は、Cu−Sn合金相、又はCu−In合金相の結晶粒を含み、該合金相の界面にAg又はBiが存在することを確認した。 Next, the alloy particles were embedded in a resin and then cut with a microtome to observe the internal structure. FIG. 2 shows a cross-sectional TEM (transmission electron microscope) image obtained as a result. As a result of analyzing the alloy structure by TEM-EDX (characteristic X-ray analyzer), the alloy particles include Cu—Sn alloy phase or Cu—In alloy phase crystal grains, and Ag or Bi at the interface of the alloy phase. Was confirmed to exist.
(2)Sn粒子の製造
Sn10.0kg(純度99質量%以上)を黒鉛坩堝に入れ、99体積%以上のヘリウム雰囲気で、高周波誘導加熱装置により1400℃まで加熱、融解した。
次に、この溶融金属を坩堝の先端より、ヘリウムガス雰囲気の噴霧槽内に導入した後、坩堝先端付近に設けられたガスノズルから、ヘリウムガス(純度99体積%以上、酸素濃度0.1体積%未満、圧力2.5MPa)を噴出してアトマイズを行い、Sn粒子を作製した。この時の冷却速度は、2600℃/秒であった。
得られたSn粒子を走査型電子顕微鏡(日立製作所:S−3400N)で観察したところ球状であった。
(2) Manufacture of Sn particles 10.0 kg of Sn (purity 99% by mass or more) was put in a graphite crucible, and heated and melted to 1400 ° C. with a high-frequency induction heating device in a helium atmosphere of 99% by volume or more.
Next, after this molten metal is introduced from the tip of the crucible into a spray tank in a helium gas atmosphere, helium gas (purity 99 vol% or more, oxygen concentration 0.1 vol%) is supplied from a gas nozzle provided near the crucible tip. Less than the pressure of 2.5 MPa) was atomized to produce Sn particles. The cooling rate at this time was 2600 ° C./second.
When the obtained Sn particles were observed with a scanning electron microscope (Hitachi, Ltd .: S-3400N), they were spherical.
このSn粒子を気流式分級機(日清エンジニアリング:TC−15N)用いて、5μm設定で分級し、大粒子側を回収後、もう一度40μm設定で分級し、小粒子側を回収した。回収したSn粒子をレーザー回折式粒子径分布測定装置(HELOS&RODOS)で測定したところ平均粒径は、6.9μmであった。
次にSn粒子を示差走査熱量計(島津製作所:DSC−50)で、窒素雰囲気下、昇温速度10℃/分の条件で、40〜580℃の範囲において測定した。この結果、242℃で吸熱ピークを検出、融点232℃(融解開始温度:固相線温度)を有することを確認した。尚、特徴的な発熱ピークは、検出されなかった。
The Sn particles were classified using an airflow classifier (Nisshin Engineering: TC-15N) at a setting of 5 μm, and after collecting the large particles, they were classified again at a setting of 40 μm, and the small particles were collected. The collected Sn particles were measured with a laser diffraction particle size distribution analyzer (HELOS & RODOS), and the average particle size was 6.9 μm.
Next, Sn particles were measured with a differential scanning calorimeter (Shimadzu Corporation: DSC-50) in a temperature range of 40 to 580 ° C. under a nitrogen atmosphere under a temperature rising rate of 10 ° C./min. As a result, an endothermic peak was detected at 242 ° C., and it was confirmed that it had a melting point of 232 ° C. (melting start temperature: solidus temperature). A characteristic exothermic peak was not detected.
(3)はんだペーストの製造
前記Cu合金粒子とSn粒子を重量比100:82で混合し、金属フィラーとした。次に金属フィラー89.9質量%、ロジン系フラックス10.1質量%を混合し、ソルダーソフナー(マルコム:SPS−1)、脱泡混練機(松尾産業:SNB−350)に順次かけてはんだペーストを作製した。このようにして得られたはんだペーストをスパイラル粘度計(マルコム:PCU−205)で測定したところ、粘度194Pa・s、チクソ指数0.46であった。
(3) Production of solder paste The Cu alloy particles and Sn particles were mixed at a weight ratio of 100: 82 to obtain a metal filler. Next, 89.9% by mass of a metal filler and 10.1% by mass of a rosin flux are mixed, and solder paste is sequentially applied to a solder softener (Malcom: SPS-1) and a defoaming kneader (Matsuo Sangyo: SNB-350). Was made. The solder paste thus obtained was measured with a spiral viscometer (Malcom: PCU-205). The viscosity was 194 Pa · s and the thixo index was 0.46.
(4)接合強度の測定
次にはんだペーストをサイズ25mm×25mm、厚み0.25mmのCu基板上に印刷塗布し、サイズ2mm×2mm、厚み0.5mmのCuチップを搭載後、窒素雰囲気にて、ピーク温度250℃でリフロー熱処理してサンプルを作製した。熱処理装置は、リフローシミュレータ(マルコム:SRS−1C)を使用した。温度プロファイルは、熱処理開始(常温)から140℃までを1.5℃/秒で昇温し、140℃から170℃までを110秒かけて徐々に昇温後、170℃から250℃までを2.0℃/秒で昇温し、ピーク温度250℃で15秒間保持する条件を採用した。印刷パターン形成は、スクリーン印刷機(マイクロテック:MT−320TV)を用い、版は、メタル製で、スキージは、ウレタン製のものを用いた。マスク開口サイズは、2mm×3.5mmで、厚みは、0.1mmである。印刷条件は、速度50mm/秒、印圧0.1MPa、スキージ圧0.2MPa、背圧0.1MPa、アタック角度20°、クリアランス0mm、印刷回数1回とした。
(4) Measurement of bonding strength Next, a solder paste is printed on a Cu substrate having a size of 25 mm × 25 mm and a thickness of 0.25 mm, and a Cu chip having a size of 2 mm × 2 mm and a thickness of 0.5 mm is mounted, and then in a nitrogen atmosphere. A sample was prepared by reflow heat treatment at a peak temperature of 250 ° C. A reflow simulator (Malcom: SRS-1C) was used as the heat treatment apparatus. The temperature profile was raised from the start of heat treatment (room temperature) to 140 ° C. at 1.5 ° C./second, gradually increased from 140 ° C. to 170 ° C. over 110 seconds, and then from 170 ° C. to 250 ° C. The temperature was raised at a rate of 0.0 ° C./second, and the conditions were maintained at a peak temperature of 250 ° C. for 15 seconds. For the printing pattern formation, a screen printer (Microtech: MT-320TV) was used, the plate was made of metal, and the squeegee was made of urethane. The mask opening size is 2 mm × 3.5 mm, and the thickness is 0.1 mm. The printing conditions were a speed of 50 mm / second, a printing pressure of 0.1 MPa, a squeegee pressure of 0.2 MPa, a back pressure of 0.1 MPa, an attack angle of 20 °, a clearance of 0 mm, and a printing frequency of once.
次に常温(25℃)で前記作製サンプルの剪断方向のチップ接合強度をプッシュ・プルゲージにより、押し速度10mm/分で測定し、単位面積換算したところ9.6MPaであった。更に前記作製サンプルをホットプレート上で260℃に加熱し、1分間保持した後、前記と同じ方法で剪断方向のチップ接合強度を測定したところ、2.3MPaであり、260℃でも接合強度を保持できる耐熱性を確認した。結果を、以下の表1に示す。 Next, the chip bond strength in the shearing direction of the prepared sample was measured at a normal speed (25 ° C.) with a push-pull gauge at a pressing speed of 10 mm / min, and converted to a unit area of 9.6 MPa. Furthermore, after heating the said preparation sample to 260 degreeC on a hotplate and hold | maintaining for 1 minute, when the chip | tip joining strength of a shear direction was measured by the same method as the above, it was 2.3 MPa, and joining strength is maintained also at 260 degreeC. The heat resistance which can be confirmed was confirmed. The results are shown in Table 1 below.
(5)Cu−Sn−In合金相の確認
次に前記作製サンプルを樹脂包埋(ビューラー:エポシン)した後、研磨してCuチップセンター部の断面を出し、接続部を観察した。この結果得られた反射電子像を図3に示す。図3中、反射電子像の最も濃く見える部分(成分としてCuを含む粒子)の平均粒径を測定したところ12.4μmであり、粒度分布のピーク値は、11.1μmだった。
次に接続部のCuを含む粒子周辺界面の合金相をTEM−EDX(特性X線分析装置)測定したところ、Inを1.3質量%有するCu−Sn−In合金相が存在することを確認した。
(5) Confirmation of Cu—Sn—In Alloy Phase Next, the prepared sample was resin-embedded (buhler: eposin), and then polished to obtain a cross section of the Cu chip center portion, and the connection portion was observed. The reflected electron image obtained as a result is shown in FIG. In FIG. 3, when the average particle diameter of the darkest portion (particles containing Cu as a component) of the reflected electron image was measured, it was 12.4 μm, and the peak value of the particle size distribution was 11.1 μm.
Next, the TEM-EDX (characteristic X-ray analyzer) was used to measure the alloy phase at the interface around the particles containing Cu in the connecting portion, and it was confirmed that a Cu-Sn-In alloy phase having 1.3 mass% of In was present. did.
[実施例2〜7]
実施例1記載のCu合金粒子とSn粒子の混合比を変えた混合体を金属フィラーとして、実施例1と同様の方法で、ペースト化、リフロー熱処理した後、チップ接合強度、接続構造体のCuを含む粒子の平均粒径を測定したものを、以下の表1に、実施例2〜7として示す。
尚、実施例2〜7の全てにおいて、接続構造体のCuを含む粒子周辺界面に、Cu−Sn−In合金相が存在することを確認した。
[Examples 2 to 7]
Using the mixture in which the mixing ratio of Cu alloy particles and Sn particles described in Example 1 is changed as a metal filler, after pasting and reflow heat treatment in the same manner as in Example 1, chip bonding strength, Cu of the connection structure In Table 1 below, the average particle diameters of the particles containing are measured as Examples 2 to 7.
In all of Examples 2 to 7, it was confirmed that a Cu—Sn—In alloy phase was present at the peripheral interface of the particles containing Cu in the connection structure.
[比較例1]
また、以下の表1に、比較例1として、代表的な鉛フリーはんだSn−3.0Ag−0.5Cuの結果を示す。
表1の結果から明らかなように、260℃に加熱した状態において、比較例1では、はんだ接続部が溶融するのに対し、実施例1〜7では、0.2MPa以上の接合強度があり、接続状態を保持する十分な耐熱性があることが判る。
[Comparative Example 1]
Table 1 below shows the results of a typical lead-free solder Sn-3.0Ag-0.5Cu as Comparative Example 1.
As apparent from the results in Table 1, in the state heated to 260 ° C., in Comparative Example 1, the solder connection portion melts, whereas in Examples 1 to 7, there is a bonding strength of 0.2 MPa or more. It can be seen that there is sufficient heat resistance to maintain the connection state.
[実施例8]
実施例1でガスアトマイズにより製造した分級前のCu合金粒子を気流式分級機(日清エンジニアリング:TC−15N)用いて、30μm設定で分級し、大粒子側を回収後、もう一度40μm設定で分級し、小粒子側を回収して得られた平均粒径26.4μmのCu合金粒子を用いて、実施例1と同様にSn粒子と混合、ペースト化、リフロー熱処理した後、チップ接合強度、接続構造体のCuを含む粒子の平均粒径を測定したところ、常温の剪断強度11.8MPa、260℃の剪断強度2.1MPa、接続構造体のCuを含む粒子の平均粒径23.5μmの結果であった。
また、接続構造体のCuを含む粒子周辺界面に、Cu−Sn−In合金相が存在することも確認した。
[Example 8]
The Cu alloy particles before classification produced by gas atomization in Example 1 were classified using an airflow classifier (Nisshin Engineering: TC-15N) at a setting of 30 μm, and after collecting the large particle side, classification was performed again at a setting of 40 μm. Using the Cu alloy particles having an average particle diameter of 26.4 μm obtained by collecting the small particle side, mixing with Sn particles, pasting, and reflow heat treatment in the same manner as in Example 1, followed by chip bonding strength and connection structure The average particle size of the particles containing Cu in the body was measured. As a result, the shear strength at normal temperature was 11.8 MPa, the shear strength at 260 ° C. was 2.1 MPa, and the average particle size of the particles containing Cu in the connection structure was 23.5 μm. there were.
It was also confirmed that a Cu—Sn—In alloy phase was present at the interface around the particles containing Cu in the connection structure.
[実施例9]
高耐熱エポキシ樹脂ガラス布からなるプリント基板のCu電極上に実施例1で作製したはんだペーストを印刷塗布し、0603サイズ積層セラミックチップコンデンサー(以下、0603Cともいう。)と1005サイズ積層セラミックチップコンデンサー(以下、1005Cともいう。)を搭載後、前記熱処理方法にて、ピーク温度250℃でリフロー熱処理してサンプルを作製した。
次に前記作製サンプルをホットプレート上で80℃に加熱し、搭載部品の高さまで、アンダーフィルを塗布後、オーブンに入れ、170℃で1時間硬化した。次にモールド樹脂を搭載部品の上部、及び周囲に塗布してオーブンに入れ、150℃で2時間硬化した後、125℃で24時間ベーキングを行った。
[Example 9]
The solder paste produced in Example 1 was printed on the Cu electrode of a printed circuit board made of a high heat-resistant epoxy resin glass cloth, and a 0603 size multilayer ceramic chip capacitor (hereinafter also referred to as 0603C) and a 1005 size multilayer ceramic chip capacitor ( Hereinafter, it was also referred to as “1005C”), and a sample was prepared by reflow heat treatment at a peak temperature of 250 ° C. by the heat treatment method.
Next, the fabricated sample was heated to 80 ° C. on a hot plate, applied with an underfill to the height of the mounted component, placed in an oven, and cured at 170 ° C. for 1 hour. Next, the mold resin was applied to the upper part and the periphery of the mounted component, placed in an oven, cured at 150 ° C. for 2 hours, and then baked at 125 ° C. for 24 hours.
次に60℃60%RHで40時間吸湿した後、窒素雰囲気にて、ピーク温度260℃のリフロー熱処理を10回繰返し行った。熱処理装置は、リフローシミュレータ(マルコム:SRS−1C)を使用した。温度プロファイルは、熱処理開始(常温)から150℃までを1.5℃/秒で昇温し、150℃から210℃までを100秒かけて徐々に昇温後、210℃から260℃までを2.0℃/秒で昇温し、ピーク温度260℃で15秒間保持する条件を採用した。
次に前記作製サンプルを樹脂溶解剤ダイナソルブ(ダイナロイ:711)に浸漬して、超音波を掛け、搭載部品周囲の樹脂を除去した。
次に前記リフロー熱処理により、はんだが溶融して、部品と封止樹脂の隙間を濡れ広がった痕跡があるか観察したが、痕跡は見られず、260℃でも流動しない耐熱性を確認した。結果を以下の表2に示す。
Next, after absorbing moisture at 60 ° C. and 60% RH for 40 hours, reflow heat treatment at a peak temperature of 260 ° C. was repeated 10 times in a nitrogen atmosphere. A reflow simulator (Malcom: SRS-1C) was used as the heat treatment apparatus. The temperature profile was as follows: from heat treatment start (room temperature) to 150 ° C. at a rate of 1.5 ° C./second, gradually increasing from 150 ° C. to 210 ° C. over 100 seconds, then from 210 ° C. to 260 ° C. The temperature was raised at a rate of 0.0 ° C./second, and the conditions were maintained at a peak temperature of 260 ° C. for 15 seconds.
Next, the prepared sample was immersed in a resin solubilizer Dynasolv (Dynaloy: 711), and ultrasonic waves were applied to remove the resin around the mounted component.
Next, the reflow heat treatment was used to observe whether or not the solder melted and the traces of the gap between the part and the sealing resin were wet and spread, but no trace was observed, and heat resistance that did not flow even at 260 ° C. was confirmed. The results are shown in Table 2 below.
[実施例10、11]
以下の表2に、実施例10として、実施例4で作製したはんだペーストを実施例9と同様の方法で評価した結果を示す。
また、以下の表2に実施例11として、実施例6で作製したはんだペーストを実施例9と同様の方法で評価した結果を示す。
[Examples 10 and 11]
Table 2 below shows the results of evaluating the solder paste produced in Example 4 as Example 10 by the same method as in Example 9.
Table 2 below shows the results of evaluating the solder paste produced in Example 6 by the same method as in Example 9 as Example 11.
[比較例2]
また、以下の表2に比較例2として、実施例9と同様の方法で評価した代表的な鉛フリーはんだSn−3.0Ag−0.5Cuの結果を示す。
表2の結果から明らかなように、比較例2では、非常に高い確率で、はんだが溶融して部品と封止樹脂の隙間を濡れ広がった痕跡が確認され、部品がショートを起こし易い状況になることが判明した。発生は、小型の0603C部品で、より顕著であった。
[Comparative Example 2]
Table 2 below shows the results of a typical lead-free solder Sn-3.0Ag-0.5Cu evaluated as a comparative example 2 in the same manner as in Example 9.
As is clear from the results in Table 2, in Comparative Example 2, there was a very high probability that traces of solder melting and spreading the gap between the component and the sealing resin were confirmed, and the component was likely to cause a short circuit. Turned out to be. Occurrence was more pronounced with small 0603C parts.
[実施例12]
前記プリント基板のCu電極上に実施例1で作製したはんだペーストを印刷塗布し、0603サイズチップ抵抗器(以下、0603Rともいう。)、0603C、1005サイズチップ抵抗器(以下、1005Rともいう。)、及び1005Cの4種の部品を搭載後、前記熱処理方法にて、ピーク温度250℃でリフロー熱処理してサンプルを作製した。
[Example 12]
The solder paste produced in Example 1 was printed on the Cu electrode of the printed circuit board, and 0603 size chip resistor (hereinafter also referred to as 0603R), 0603C, and 1005 size chip resistor (hereinafter also referred to as 1005R). , And 1005C were mounted, and then a sample was prepared by reflow heat treatment at a peak temperature of 250 ° C. by the heat treatment method.
次に前記作製サンプルを樹脂包埋(ビューラー:エポシン)した後、研磨して部品長手方向センター部の断面を出した。
尚、前記作製サンプルを実施例1と同様の方法で接続構造体のCuを含む粒子の平均粒径を求めたところ8.3μmであり、粒度分布のピーク値は、7.4μmであった。
次にはんだ接続部の画像を撮影し、画像処理ソフト(三谷商事:ウインルーフ)を用いて、はんだ接続部に含まれるボイドの割合を算出した。前記作業を各部品で10点行い、平均値を算出したところ、ボイド率は、0603Rで3.6%、0603Cで6.0%、1005Rで6.5%、1005Cで6.4%と、何れも10%以下で、ボイドが非常に少ないことが確認できた。結果を以下の表3に示す。
Next, the prepared sample was resin-embedded (Buhler: eposin) and then polished to obtain a cross section of the center portion in the longitudinal direction of the component.
In addition, when the average particle diameter of the particle | grains containing Cu of a connection structure was calculated | required for the said preparation sample by the method similar to Example 1, it was 8.3 micrometers and the peak value of the particle size distribution was 7.4 micrometers.
Next, an image of the solder connection portion was taken, and the ratio of voids contained in the solder connection portion was calculated using image processing software (Mitani Corporation: Win Roof). When the above work was performed at 10 points for each part and the average value was calculated, the void ratio was 3.6% for 0603R, 6.0% for 0603C, 6.5% for 1005R, 6.4% for 1005C, All were 10% or less, and it was confirmed that there were very few voids. The results are shown in Table 3 below.
[実施例13、14]
以下の表3に実施例13として、実施例4で作製したはんだペーストを実施例12と同様の方法で評価した結果を示す。
また、以下表3に実施例14として、実施例6で作製したはんだペーストを実施例12と同様の方法で評価した結果を示す。
[Examples 13 and 14]
Table 3 below shows the results of evaluating the solder paste prepared in Example 4 by the same method as in Example 12 as Example 13.
Table 3 below shows the results of evaluating the solder paste prepared in Example 6 by the same method as in Example 12 as Example 14.
[比較例3〜6]
以下の表3に、比較例3として、実施例1でガスアトマイズにより製造した分級前のCu合金粒子を気流式分級機(日清エンジニアリング:TC−15N)用いて、1.6μm設定で分級し、大粒子側を回収後、もう一度10μm設定で分級し、小粒子側を回収して得られた平均粒径2.7μmのCu合金粒子を用いて、実施例1と同様にSn粒子と混合、ペースト化、実施例12と同様の方法で評価した結果を示す。
[Comparative Examples 3 to 6]
In Table 3 below, as Comparative Example 3, Cu alloy particles before classification produced by gas atomization in Example 1 were classified using an airflow classifier (Nisshin Engineering: TC-15N) at a setting of 1.6 μm, After collecting the large particle side, classification is performed again at a setting of 10 μm, and Cu alloy particles having an average particle diameter of 2.7 μm obtained by collecting the small particle side are mixed with Sn particles in the same manner as in Example 1 and pasted. The results of evaluation in the same manner as in Example 12 are shown.
また、比較例4として、実施例1でガスアトマイズにより製造した分級前のCu合金粒子を気流式分級機(日清エンジニアリング:TC−15N)用いて、40μm設定で分級し、小粒子側を回収して得られた平均粒径4.4μmのCu合金粒子と、同じくガスアトマイズにより製造した分級前のSn粒子を気流式分級機(日清エンジニアリング:TC−15N)用いて、40μm設定で分級し、小粒子側を回収して得られた平均粒径5.7μmのSn粒子とを、実施例1と同じ重量比で混合、ペースト化、実施例12と同様の方法で評価した結果を示す。 Moreover, as Comparative Example 4, the Cu alloy particles before classification produced by gas atomization in Example 1 were classified using an airflow classifier (Nisshin Engineering: TC-15N) at a setting of 40 μm, and the small particle side was recovered. The Cu alloy particles having an average particle diameter of 4.4 μm obtained and the Sn particles before classification produced by gas atomization were classified using an airflow classifier (Nisshin Engineering: TC-15N) at a setting of 40 μm. The results of mixing and pasting Sn particles with an average particle diameter of 5.7 μm obtained by collecting the particle side at the same weight ratio as in Example 1 and evaluating in the same manner as in Example 12 are shown.
また、比較例5として、比較例4で分級したCu合金粒子とSn粒子を、実施例4と同じ重量比で混合、ペースト化、実施例12と同様の方法で評価した結果を示す。
また、比較例6として、Cu合金粒子の代わりに平均粒径15.4μmのCu粒子(福田金属箔粉工業:Cu−HWQ 15μm)を用いて、実施例1と同様にSn粒子と混合、ペースト化、実施例12と同様の方法で評価した結果を示す。
尚、比較例3で作製したはんだペーストを実施例1と同様の方法で接続構造体のCuを含む粒子の平均粒径を求めたところ0.8μmであり、粒度分布のピーク値は、0.4μmだった。
表3から明らかなように、同じ組成のCu合金粒子でも、実施例12の方が、比較例3、4に比較して、はんだ接続部に含まれるボイドが少なくなることを確認した。
Further, as Comparative Example 5, the results are shown in which the Cu alloy particles and Sn particles classified in Comparative Example 4 were mixed and pasted at the same weight ratio as in Example 4, and evaluated in the same manner as in Example 12.
Further, as Comparative Example 6, Cu particles having an average particle diameter of 15.4 μm (Fukuda Metal Foil Powder Industry: Cu-HWQ 15 μm) were used instead of Cu alloy particles, and mixed with Sn particles in the same manner as in Example 1, paste. The results of evaluation in the same manner as in Example 12 are shown.
The average particle size of the particles containing Cu in the connection structure of the solder paste prepared in Comparative Example 3 was 0.8 μm in the same manner as in Example 1. The peak value of the particle size distribution was 0. It was 4 μm.
As is apparent from Table 3, it was confirmed that even in the case of Cu alloy particles having the same composition, the voids contained in the solder connection portion were smaller in Example 12 than in Comparative Examples 3 and 4.
[実施例15]
前記プリント基板のCu電極上に実施例1で作製したはんだペーストを印刷塗布し、1005R部品を搭載後、前記熱処理方法にて、ピーク温度250℃でリフロー熱処理してサンプルを作製した。
次に前記作製サンプルの剪断方向の部品接合強度をプッシュ・プルゲージにより、押し速度10mm/分で測定、30点の平均値を接合強度とした。次に150℃のオーブンに入れ1000時間放置した後、前記同様に部品接合強度を測定したところ、1005R部品の接合強度は、8.4Nから7.1Nに減少、減少率は15.5%であった。結果を以下の表4に示す。
[Example 15]
The solder paste prepared in Example 1 was printed on the Cu electrode of the printed circuit board, and after mounting the 1005R component, a reflow heat treatment was performed at a peak temperature of 250 ° C. by the heat treatment method to prepare a sample.
Next, the component joining strength in the shear direction of the produced sample was measured with a push-pull gauge at a pushing speed of 10 mm / min, and the average value of 30 points was defined as the joining strength. Next, after putting it in an oven at 150 ° C. for 1000 hours and measuring the component bonding strength in the same manner as described above, the bonding strength of the 1005R component was reduced from 8.4 N to 7.1 N, and the reduction rate was 15.5%. there were. The results are shown in Table 4 below.
[実施例16、17]
以下の表4に実施例16として、実施例4で作製したはんだペーストを実施例15と同様の方法で評価した結果を示す。
また、以下の表4に実施例17として、実施例6で作製したはんだペーストを実施例15と同様の方法で評価した結果を示す。
[Examples 16 and 17]
Table 4 below shows the results of evaluating the solder paste produced in Example 4 by the same method as in Example 15 as Example 16.
Table 4 below shows the results of evaluating the solder paste produced in Example 6 by the same method as in Example 15 as Example 17.
[比較例7〜9]
以下の表4に、比較例7として、実施例15と同様の方法で評価した代表的な鉛フリーはんだSn−3.0Ag−0.5Cuの結果を示す。
また、比較例8として、比較例3で作製したはんだペーストを実施例15と同様の方法で評価した結果を示す。
また、比較例9として、比較例6で作製したはんだペーストを実施例15と同様の方法で評価した結果を示す。
表4から明らかなように、150℃高温放置試験における接合強度低下(減少率)は、実施例15〜17に比較して、比較例7〜9で大きい結果となった。これは、Cu電極又はCu粒子界面で成長するCuSn化合物による影響と考えられる。これに対し、実施例15〜17では、Cu−Sn−In合金相が存在しており、粗大晶出が抑制されたと考えられる。尚、比較例8に比べ実施例15の方が、ボイドが少ない点から、初期の接合状態が良いと想定される。
[Comparative Examples 7 to 9]
Table 4 below shows the results of a representative lead-free solder Sn-3.0Ag-0.5Cu evaluated as a comparative example 7 in the same manner as in Example 15.
Further, as Comparative Example 8, the result of evaluating the solder paste produced in Comparative Example 3 by the same method as in Example 15 is shown.
Further, as Comparative Example 9, the result of evaluating the solder paste produced in Comparative Example 6 by the same method as in Example 15 is shown.
As is apparent from Table 4, the reduction in bonding strength (reduction rate) in the 150 ° C. high-temperature standing test was larger in Comparative Examples 7 to 9 than in Examples 15 to 17. This is considered to be due to the influence of the CuSn compound grown at the Cu electrode or Cu particle interface. On the other hand, in Examples 15-17, the Cu-Sn-In alloy phase exists and it is thought that the coarse crystallization was suppressed. Note that it is assumed that the initial bonding state is better in Example 15 than in Comparative Example 8 because there are fewer voids.
[実施例18]
前記プリント基板のCu電極上に実施例1で作製したはんだペーストを印刷塗布し、0603R部品(ゼロオーム抵抗器)を直列回路になるよう87個搭載後、前記熱処理方法にて、ピーク温度250℃でリフロー熱処理してサンプルを作製した。
次に前記作製サンプルの回路抵抗を4端子法で測定した後、−40℃、125℃各30分を1サイクルとする冷熱サイクル試験機に投入し、1000サイクル後の回路抵抗を測定して、抵抗変化率を求めたところ0.2%であった。結果を以下の表5に示す。
[Example 18]
The solder paste prepared in Example 1 was printed on the Cu electrode of the printed circuit board, and after mounting 87 pieces of 0603R components (zero ohm resistors) in a series circuit, the peak temperature was 250 ° C. by the heat treatment method. A sample was prepared by reflow heat treatment.
Next, after measuring the circuit resistance of the prepared sample by the 4-terminal method, it was put into a refrigeration cycle tester with -40 ° C and 125 ° C for 30 minutes each as one cycle, and the circuit resistance after 1000 cycles was measured, The resistance change rate was determined to be 0.2%. The results are shown in Table 5 below.
[実施例19、20]
以下の表5に、実施例19として、実施例4で作製したはんだペーストを実施例18と同様の方法で評価した結果を示す。
また、以下の表5に実施例20として、実施例6で作製したはんだペーストを実施例18と同様の方法で評価した結果を示す。
[Examples 19 and 20]
Table 5 below shows the results of evaluation of the solder paste prepared in Example 4 by the same method as in Example 18 as Example 19.
Table 5 below shows the results of evaluation of the solder paste prepared in Example 6 by the same method as in Example 18 as Example 20.
[比較例10〜12]
以下の表5に、比較例10として、実施例18と同様の方法で評価した代表的な鉛フリーはんだSn−3.0Ag−0.5Cuの結果を示す。
また、比較例11として、比較例3で作製したはんだペーストを実施例18と同様の方法で評価した結果を示す。
また、比較例12として、比較例6で作製したはんだペーストを実施例18と同様の方法で評価した結果を示す。
表5から明らかなように、冷熱サイクル試験における抵抗変化率は、実施例18〜20に比較して、比較例10〜12で大きい結果となった。これは、Cu電極又はCu粒子界面で成長するCuSn化合物による影響と考えられる。これに対し、実施例18〜20では、Cu−Sn−In合金相が存在しており、粗大晶出が抑制されたと考えられる。尚、比較例11に比べ実施例18の方が、ボイドが少ない点から、初期の接合状態が良いと想定される。
[Comparative Examples 10-12]
Table 5 below shows the results of a typical lead-free solder Sn-3.0Ag-0.5Cu evaluated by the same method as in Example 18 as Comparative Example 10.
Further, as Comparative Example 11, the result of evaluating the solder paste produced in Comparative Example 3 by the same method as in Example 18 is shown.
Further, as Comparative Example 12, the result of evaluating the solder paste produced in Comparative Example 6 by the same method as in Example 18 is shown.
As is apparent from Table 5, the resistance change rate in the cooling / heating cycle test was larger in Comparative Examples 10-12 than in Examples 18-20. This is considered to be due to the influence of the CuSn compound grown at the Cu electrode or Cu particle interface. On the other hand, in Examples 18-20, the Cu-Sn-In alloy phase exists and it is thought that the coarse crystallization was suppressed. Note that it is assumed that the initial bonding state is better in Example 18 than in Comparative Example 11 because there are fewer voids.
本発明に係る金属フィラー、はんだペースト、及び接続構造体は、後工程で複数回の熱処理を受ける部品内蔵基板やパッケージ等の電子デバイスのはんだ接続に好適に利用可能である。 The metal filler, solder paste, and connection structure according to the present invention can be suitably used for solder connection of electronic devices such as component-embedded substrates and packages that undergo multiple heat treatments in the subsequent process.
Claims (6)
Cu−Sn−Inを含む合金相が少なくとも該Cuを含む粒子の界面に存在し、該Cuを含む粒子の平均粒径が、2〜28μmであり、且つ、粒度分布のピーク位置が、5〜25μmであることを特徴とする接続構造体。 A connection structure having particles containing Cu as a component in a conductive region that is lead-free solder,
An alloy phase containing Cu—Sn—In is present at least at the interface of the particles containing Cu, the average particle size of the particles containing Cu is 2 to 28 μm, and the peak position of the particle size distribution is 5 to 5 μm. A connection structure characterized by being 25 μm.
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| TWI461252B (en) | 2010-12-24 | 2014-11-21 | 村田製作所股份有限公司 | A bonding method, a bonding structure, an electronic device, an electronic device manufacturing method, and an electronic component |
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| RU2508414C1 (en) * | 2013-04-17 | 2014-02-27 | Юлия Алексеевна Щепочкина | Copper-based alloy |
| RU2537688C1 (en) * | 2014-02-12 | 2015-01-10 | Владимир Викторович Черниченко | Copper-based alloy |
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| US11425825B2 (en) | 2016-08-02 | 2022-08-23 | Koki Company Limited | Solder paste using a solder paste flux and solder powder |
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