JP5595380B2 - Solid-state imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device that converts incident light into an electrical signal and outputs it as a video signal.

  Conventionally, a solid-state imaging device that converts incident light into an electrical signal and outputs it as a video signal is known, and a digital still camera (Digital Still Camera, which displays an image based on a video signal obtained from the solid-state imaging device) DSC) is known. In recent years, a camera using a solid-state imaging device has been demanded to further improve image quality and functions, and pixel miniaturization is progressing as the number of pixels increases.

  In such a solid-state imaging device, in order to improve the output speed of the video signal, a method of reducing the number of pixels of the output video signal by thinning out pixels for reading signal charges or mixing a plurality of signal charges has been proposed. . Specifically, a method of controlling the transfer of signal charges between the vertical transfer unit and the horizontal transfer unit has been proposed in order to realize pixel thinning and mixing. Alternatively, a method of improving the output speed of the video signal by providing a plurality of horizontal transfer units has been proposed.

  For example, in Patent Document 1, a hold gate unit and a charge discharging unit for thinning out signal charges are provided between a vertical transfer unit and a horizontal transfer unit, and thinning is performed in the column direction. In Patent Document 2, a distribution transfer unit having an independent electrode that is controlled independently for each column is provided between the vertical transfer unit and the horizontal transfer unit, and signal charges are transferred from the vertical transfer unit to the horizontal transfer unit. I have control. Further, Patent Document 3 uses an output method in which two horizontal transfer units are arranged in parallel, and realizes high-speed driving by simultaneously transferring signal charges for two lines horizontally.

  FIG. 14 is a configuration diagram showing a schematic configuration of a conventional solid-state imaging device.

  The solid-state imaging device 801 illustrated in FIG. 1 includes a pixel unit 802, a distribution transfer unit 805, a horizontal transfer unit 806a, an output unit 807, and a shunt wiring 808. Specifically, the solid-state imaging device 801 is a charge coupled device (Charge Coupled) having vertical transfer electrodes V1 to V6, horizontal transfer electrodes H1 and H2, and distributed transfer electrodes V7L, V8L, V7C, V8C, V7R, and V8R. Device, CCD) and is driven by drive pulses φV1 to φV6, φH1, φH2, φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R. Here, the vertical transfer electrodes V <b> 1 to V <b> 6 are electrodes common to all the columns of the pixel unit 2. In addition, the distribution transfer electrodes V7L, V8L, V7C, V8C, V7R, and V8R are independent electrodes separated in an island shape in each column of the pixel portion 802, and the distribution transfer electrodes V7L and V8L are the same column and the distribution transfer electrode V7C. And V8C are electrodes in the same column, and the sorting transfer electrodes V7R and V8R are electrodes in the same column.

  The pixel unit 802 includes a photoelectric conversion unit 803 that converts incident light into an electric signal, and a vertical transfer unit 804 that transfers the obtained signal charges in the vertical direction (downward in the figure) according to the drive pulses φV1 to φV6. Including. When the signal charge transferred in the vertical direction by the vertical transfer unit 804 moves to the horizontal transfer unit 806a, the distribution transfer unit 805 including the final stage of the vertical transfer unit 804 transfers the signal to the horizontal transfer unit 806a. And the holding is controlled. The signal charge transferred from the distribution transfer unit 805 to the horizontal transfer unit 806a is transferred in the horizontal direction (left direction in the figure) by the horizontal transfer unit 806a, and is read out to the output unit 807 that converts the signal charge into a voltage and outputs it. It is.

  Here, the distribution transfer unit 805 holds a signal charge or transfers it to the horizontal transfer unit 806a in accordance with the drive pulses φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R applied to the shunt wiring 808.

  FIG. 15 is a diagram illustrating details of the wiring layout of the solid-state imaging device 801. This figure is illustrated around the horizontal transfer unit 806a.

  In the pixel portion 802, the vertical transfer electrode 811 is disposed on the vertical transfer portion 804. The vertical transfer electrode 811 is electrically connected to the shunt wiring 821 through the contact 815, and drive pulses φV1 to φV6 that transmit the shunt wiring 821 are applied.

  In the distribution transfer unit 805, the distribution transfer electrode 812 is disposed on the final stage of the vertical transfer unit 804. The distribution transfer unit 805 is electrically connected to the bus line wiring 814 via the contact 815 and the shunt wiring 808, and is applied with drive pulses φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R that transmit the bus line wiring 814. Is done.

  The bus line wiring 814 is arranged at a portion across the horizontal transfer unit 806a with respect to the distribution transfer unit 805.

JP 2008-193050 A JP 2006-13176 A Japanese Patent No. 29996050

  However, when the shunt wiring 808 straddling the horizontal transfer unit 806a is used, the shunt wiring 808 has a coupling capacity with the horizontal transfer electrode 813 by being disposed above the horizontal transfer electrode 813. As a result, crosstalk occurs in which the signals transmitted through the shunt wiring 808, that is, the driving pulses φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R, are driven as noise by the driving pulses φH1 and φH2 of the horizontal transfer electrode 813 that is driven at high speed To do. Hereinafter, the influence of the crosstalk from the drive pulses φH1 and φH2 on the drive pulses φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R will be described.

  FIG. 16 is an excerpt of the layout of the horizontal transfer unit 6a of FIG. FIG. 16 also shows shunt wirings 831 to 836 overlapping the horizontal transfer unit 6a.

  The shunt wirings 831 to 836 are the same as the shunt wiring 808 shown in FIG. 15. The shunt wiring 831 has a driving pulse φV7L, the shunt wiring 832 has a driving pulse φV8L, the shunt wiring 833 has a driving pulse φV7C, and the shunt wiring. A driving pulse φV8C is applied to 834, a driving pulse φV7R is applied to the shunt wiring 835, and a driving pulse φV8R is applied to the shunt wiring 836.

  When the horizontal transfer unit 806a is two-phase driven, the horizontal transfer electrode 813 corresponds to either the first-phase horizontal transfer electrode H1 or the second-phase horizontal transfer electrode H2. The first-phase horizontal transfer electrodes H1 and the second-phase horizontal transfer electrodes H2 are alternately arranged and driven by drive pulses φH1 and φH2.

  Each of the shunt wirings 831 to 836 is disposed so as to overlap with one of the horizontal transfer electrodes H1 and H2. For example, the shunt wiring 831 to which the driving pulse φV7L is applied is above the second phase horizontal transfer electrode H2, and the shunt wiring 832 to which the driving pulse φV8L is applied is above the first phase horizontal transfer electrode H1. Straddling.

  FIG. 17 is a timing chart showing waveforms of drive pulses φH1, φH2, φV7L, and φV8L. Since the horizontal transfer unit 806a is two-phase driven, the driving pulse φH1 and the driving pulse φH2 are in opposite phases.

  At time t4, the drive pulses φH1 and φH2 are in a stable state after a sufficient amount of time has passed since the previous rise and fall. Therefore, the drive pulses φV7L and φV8L are not affected by the crosstalk, and take a predetermined voltage value (for example, φV7L is 0 [V] and φV8L is 3.3 [V]).

  Thereafter, the drive pulse φH1 rises and the drive pulse φH2 falls.

  At time t5 immediately after the rise and fall, the drive pulse φV7L is affected by the crosstalk from the drive pulse φH2, and becomes lower than a predetermined voltage. Further, the drive pulse φV8L is affected by the crosstalk from the drive pulse φH1, and becomes higher than a predetermined voltage.

  Thereafter, as the drive pulses φH1 and φH2 become stable, the influence of crosstalk on the drive pulses φV7L and φV8L is reduced. Next, the drive pulse φH1 falls and the drive pulse φH2 rises.

  At time t6 immediately after the rise and fall, the drive pulses φV7L and φV8L are affected again by the crosstalk from the drive pulses φH1 and φH2, and become voltages different from the predetermined voltage. However, since the rising and falling edges of the driving pulses φH1 and φH2 are inverted compared to the time t4, the driving pulse φV7L becomes higher than a predetermined voltage, and the driving pulse φV8L becomes lower than the predetermined voltage.

  Thus, at the rise and fall of the drive pulses φH1 and φH2, the drive pulses φV7L and φV8L are different from the predetermined voltage due to the influence of crosstalk.

  Although only the drive pulses φV7L and φV8L are shown in the figure, the other drive pulses φV7C, φV8C, φV7R, and φV8R that drive the distribution transfer unit 805 are similarly caused by crosstalk from the drive pulses φH1 and φH2. There is a time when the voltage becomes different from each predetermined voltage.

  In this way, crosstalk occurs and the voltages of the drive pulses φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R become different from the predetermined voltage, for example, saturation is reduced in the distribution transfer unit 5, or In other words, it may occur that the signal charge leaks to the preceding stage or the subsequent stage without being able to hold the part that the signal transfer part 805 originally needs to hold the signal charge. This leakage of signal charge will be described in detail below.

  FIG. 18 is a diagram illustrating the potential of the distribution transfer unit 805 at each time (t4 to t6) in FIG.

  In the horizontal direction, the vertical transfer electrode V6 that is the vertical transfer electrode 811 at the final stage of the pixel portion 802, the distribution transfer electrode 812 to which the drive pulse φV7L is applied, the distribution transfer electrode 812 to which the drive pulse φV8L is applied, The position of the transfer electrode 813 with the HCCD (horizontal transfer unit) is shown. The vertical direction indicates a potential (lower is higher). Signal charges are transferred from right to left in the figure.

  At time t4 (when the voltage is stable just before the horizontal drive pulse is applied), the drive pulse φV7L applied to the distribution transfer electrode V7L is a predetermined voltage, and a signal is sent to the vertical transfer unit 4 below the distribution transfer electrode V7L. Charge Q is accumulated.

  Next, at time t5 (immediately after the horizontal drive pulse is applied), the drive pulse φV7L is affected by crosstalk from the drive pulse φH2, and becomes lower than a predetermined voltage. Further, the drive pulse φV8L is affected by the crosstalk from the drive pulse φH1, and becomes higher than a predetermined voltage. Accordingly, a part of the signal charge stored in the vertical transfer unit 804 below the distribution transfer electrode V7L leaks to the vertical transfer unit 804 below the distribution transfer electrode V8L. That is, the saturation charge amount of the vertical transfer unit 804 below the distribution transfer electrode V7L is reduced as compared with the case where a predetermined voltage is applied.

  Thereafter, as the drive pulses φH1 and φH2 become stable, the drive pulses φV7L and φV8L return to a predetermined voltage.

  Next, at time t6 (when the next horizontal drive pulse is applied), the drive pulse φV7L becomes higher than a predetermined voltage, and the drive pulse φV8L becomes lower than the predetermined voltage. The saturation charge amount of the transfer unit 804 increases as compared with the case where a predetermined voltage is applied.

  As described above, the conventional solid-state imaging device 801 includes the shunt wiring 808 that transmits the drive pulses φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R applied to the distribution transfer unit 805, and the horizontal transfer electrode 813 of the horizontal transfer unit 806a. The potential of the drive pulses φV7L and φV8L fluctuates at t5 due to the influence of crosstalk generated by the coupling capacitance between them, and the saturation charge amount of the vertical transfer unit 804 below the distribution transfer unit 805 decreases. As a result, there is a problem that correct gradation cannot be obtained and image quality deteriorates.

  By the way, for example, the following configuration is conceivable as a configuration for realizing high-speed driving as in the configuration described in Patent Document 3.

  FIG. 19 is a configuration diagram illustrating a configuration example of a solid-state imaging device of a 2ch output method in which two horizontal transfer units arranged in parallel with each other are arranged. A solid-state imaging device 901 illustrated in FIG. 19 includes a pixel unit 902 including a photoelectric conversion unit 903 and a vertical transfer unit 904, a first horizontal transfer unit 906a, a second horizontal transfer unit 906b, and a horizontal distribution transfer unit 905. And a first output unit 907a and a second output unit 907b.

  The operation of the solid-state imaging device 901 will be briefly described.

  In the case of a structure in which signals for two lines are transferred simultaneously using two horizontal transfer units, the signal charges generated in the photoelectric conversion unit 903 are read out to the vertical transfer unit 904 via the reading unit, and the vertical transfer unit The data is sequentially transferred in the 904 and transferred to the first horizontal transfer unit 906a. Thereafter, a voltage is applied to the horizontal distribution transfer unit 905 between the first horizontal transfer unit 906a and the second horizontal transfer unit 906b, and a signal is transmitted from the first horizontal transfer unit 906a to the second horizontal transfer unit 906b. Transfer charge. Next, after transferring the signal charge of the next line from the vertical transfer unit 904 to the first horizontal transfer unit 906a, the charges of the first horizontal transfer unit 906a and the second horizontal transfer unit 906b are simultaneously transferred in the horizontal direction. Then, each output unit (first output unit 907a and second output unit 907b) detects the signal charge and converts it into a voltage to output a signal for two lines. As described above, the configuration of the horizontal transfer units arranged in parallel realizes high-speed driving by simultaneously outputting signal charges for two lines.

  Here, even when the horizontal transfer units are provided in parallel, when the horizontal transfer electrode is to be formed in a single layer, as shown in FIG. 19, the horizontal distribution transfer unit 905 is connected to the first horizontal transfer unit 906a and the second horizontal transfer unit 906a. To the horizontal transfer unit 906b. Therefore, it is necessary to apply the drive pulse directly to the horizontal transfer electrodes of the first horizontal transfer unit and the second horizontal transfer unit. For this purpose, for example, as shown in FIG. 20, a driving pulse is also applied to the first horizontal transfer unit 906a by arranging the shunt wiring 908 across the second horizontal transfer unit 906b to the first horizontal transfer unit 906a. Can be applied.

  However, for example, the electrode configurations of the first horizontal transfer unit 906a and the second horizontal transfer unit 906b are not repeatedly formed in the same arrangement as shown in FIG. 21A, but as shown in FIG. 21B. When the transfer unit 906a and the second horizontal transfer unit 906b have some electrode configurations that are different from each other, the shunt wiring 908 needs to be disposed obliquely, but straddles over other transfer electrodes. Therefore, there is a concern that crosstalk may occur due to the coupling capacitance between the shunt wiring and the transfer electrode.

  Therefore, an object of the present invention is to provide a solid-state imaging device that can reduce the influence of crosstalk and obtain a correct gradation according to the amount of incident light.

  In order to achieve the above object, a solid-state imaging device according to the present invention is provided corresponding to each of a plurality of photoelectric conversion units arranged in a matrix and each column of the plurality of photoelectric conversion units. A vertical transfer unit that transfers a plurality of signal charges read from the conversion unit in a vertical direction and a plurality of horizontal transfer electrodes, and a plurality of signal charges are horizontally generated by a horizontal drive signal applied to each of the plurality of horizontal transfer electrodes. A horizontal transfer unit that transfers in the direction, and a hold unit that holds or transfers a plurality of signal charges transferred from each vertical transfer unit, and the hold unit corresponds to each vertical transfer unit The plurality of signal charges are held or transferred to the horizontal transfer unit according to the voltage applied to the corresponding control electrode, and the solid-state imaging device further includes: Previous A wiring provided corresponding to the control electrode and electrically connected to the corresponding control electrode, wherein the plurality of horizontal transfer electrodes include at least a first horizontal transfer electrode and a second horizontal transfer electrode; The wiring is arranged so as to overlap the first horizontal transfer electrode and the second horizontal transfer electrode, and the phase of the horizontal drive signal applied to the first horizontal transfer electrode and the second horizontal transfer The phase of the horizontal drive signal applied to the electrodes is different.

  Thus, the wiring has a coupling capacitance with both the first horizontal transfer electrode and the second horizontal transfer electrode. Here, the phase of the horizontal drive signal applied to the first horizontal transfer electrode is different from the phase of the horizontal drive signal applied to the second horizontal transfer electrode. Therefore, the influence of crosstalk on the signal transmitted through the wiring from the horizontal drive signal applied to the first horizontal transfer electrode and the horizontal drive signal applied to the second horizontal transfer electrode cancels each other and is reduced. The

  As a result, the voltage applied to the control electrode is kept at a predetermined voltage, so that the solid-state imaging device according to the present invention can obtain a correct gradation according to the amount of incident light.

  In addition, the area where the wiring and the first horizontal transfer electrode overlap and the area where the wiring and the second horizontal transfer electrode overlap may be substantially equal.

  As a result, the influence of the crosstalk from the horizontal drive signal applied to the first horizontal transfer electrode can be made substantially the same as the influence of the crosstalk from the horizontal drive signal applied to the second horizontal transfer electrode. , The effects of crosstalk can be further counteracted.

  Further, the horizontal transfer unit is N (N is an integer of 3 or more) phase drive, the plurality of horizontal transfer electrodes include N horizontal transfer electrodes, and the wiring is the N horizontal transfer electrodes. The horizontal drive signals applied to each of the N horizontal transfer electrodes are different in phase from each other, and the areas where the wiring and the N horizontal transfer electrodes overlap are substantially equal. Also good.

  Thereby, even in the case of N (N is an integer of 3 or more) phase driving, the influence of the crosstalk can be reduced by offsetting the influence from the horizontal driving signal applied to each horizontal transfer electrode. For example, in the case where the horizontal transfer unit is in three-phase driving, all the lines of the horizontal drive signal are compared with the case where the wiring overlaps only with the horizontal transfer electrode to which the first phase of the horizontal drive signal is applied. When overlapping with a plurality of horizontal transfer electrodes to which different phases are applied, the influence of crosstalk can be reduced as follows.

  First, due to the crosstalk of the horizontal driving signal of the first phase, the signal transmitted through the wiring is changed to a voltage different from the predetermined voltage. However, the voltage change generated in the signal transmitted through the wiring changes in the reverse direction due to the crosstalk generated by the horizontal driving signal of the third phase before reaching the maximum differential voltage. Note that the maximum differential voltage was affected by a predetermined voltage value and crosstalk when the electrodes are arranged so as to overlap only the horizontal transfer electrode to which the horizontal driving signal of the first phase is applied. This is the maximum value of the difference from the voltage value.

  As described above, the crosstalk of the horizontal drive signal of the Kth (K is any one of 1 to 3) phase generated in the signal transmitted through the wiring is Lth (L is any of 1 to 3 other than K). I) Pulled in the opposite direction due to the crosstalk of the horizontal drive signal of the phase. Therefore, the influence of crosstalk can be reduced as compared with the case where the wiring overlaps with only one horizontal transfer electrode.

  The wiring may be arranged obliquely with respect to a charge transfer direction from the hold unit to the horizontal transfer unit.

  Thereby, the wiring layout can be designed easily.

  The horizontal transfer unit is two-phase driven, and the wiring is arranged in a direction perpendicular to the charge transfer direction of the horizontal transfer unit, and a part of the adjacent first horizontal transfer electrode and the second horizontal transfer electrode are arranged. It may overlap with a part of the transfer electrode.

  The phase of the horizontal drive signal applied to the first horizontal transfer electrode may be opposite to the phase of the horizontal drive signal applied to the second horizontal transfer electrode.

  In this way, by being arranged so as to overlap with the horizontal transfer electrode to which the reverse-phase horizontal drive signal is applied, it is possible to cancel the influence of the cross-talk from the opposite-phase horizontal drive signal to the wiring.

  The solid-state imaging device according to the present invention includes a substrate, a solid-state imaging device, a first signal line formed on a first wiring layer on the substrate, to which a signal for controlling the solid-state imaging device is applied, A second signal line formed on the first wiring layer, to which a signal for controlling the solid-state imaging device is applied; and a second wiring layer above the first wiring layer; A signal line and a third signal line arranged to overlap the second signal line and to which a signal for controlling the solid-state imaging device is applied, and a signal applied to the first signal line, The signal applied to the second signal line is opposite in phase, the area where the third signal line overlaps with the first signal line, and the third signal line overlaps with the second signal line. The area is substantially equal.

  As a result, the effects of crosstalk from the first signal line and the second signal line to the third signal line cancel each other, so that the signal applied to the third signal line is not affected by the crosstalk. Therefore, the solid-state imaging device can be controlled appropriately.

  The solid-state imaging device according to the present invention is a solid-state imaging device, and is provided corresponding to each of the plurality of photoelectric conversion units arranged in a matrix and the columns of the plurality of photoelectric conversion units. A vertical transfer unit that transfers a plurality of signal charges read from the conversion unit in the vertical direction and a plurality of first electrodes, and is transferred from each vertical transfer unit by a horizontal drive signal applied to each of the plurality of first electrodes. A first horizontal transfer unit that transfers a part of the plurality of signal charges in the horizontal direction, and a plurality of signal charges that are arranged in parallel with the first horizontal transfer unit and transferred from each vertical transfer unit A second horizontal transfer unit that transfers a portion in the horizontal direction, and is disposed between the first horizontal transfer unit and the second horizontal transfer unit, and the other part of the plurality of signal charges is transferred to the first horizontal transfer unit. Horizontal transfer selectively transferred from the horizontal transfer unit to the second horizontal transfer unit And a wiring provided corresponding to the first electrode and electrically connected to the corresponding first electrode, wherein the second horizontal transfer unit includes at least the first horizontal transfer electrode and the second horizontal transfer electrode. A plurality of second electrodes including a plurality of horizontal transfer electrodes, the other part of the plurality of signal charges being transferred by a horizontal drive signal applied to each of the plurality of second electrodes, Of the horizontal drive signal applied to the first horizontal transfer electrode and the horizontal applied to the second horizontal transfer electrode. It is different from the phase of the drive signal.

  Thus, the wiring has a coupling capacitance with both the first horizontal transfer electrode and the second horizontal transfer electrode. Here, the phase of the horizontal drive signal applied to the first horizontal transfer electrode is different from the phase of the horizontal drive signal applied to the second horizontal transfer electrode. Therefore, the influence of crosstalk on the signal transmitted through the wiring from the horizontal drive signal applied to the first horizontal transfer electrode and the horizontal drive signal applied to the second horizontal transfer electrode cancels each other and is reduced. The

  As a result, since the voltage applied to the first electrode is maintained at a predetermined voltage, the solid-state imaging device according to the present invention can realize high-speed driving that can obtain a correct gradation according to the amount of incident light.

  In addition, the area where the wiring and the first horizontal transfer electrode overlap and the area where the wiring and the second horizontal transfer electrode overlap may be substantially equal.

  As a result, the influence of the crosstalk from the horizontal drive signal applied to the first horizontal transfer electrode can be made substantially the same as the influence of the crosstalk from the horizontal drive signal applied to the second horizontal transfer electrode. , The effects of crosstalk can be further counteracted.

  The first and second horizontal transfer units may be N (N is an integer of 3 or more) phase drive, each of the first and second electrodes may include N horizontal transfer electrodes, and the wiring Are arranged so as to overlap the N horizontal transfer electrodes, the phases of the horizontal drive signals applied to the N horizontal transfer electrodes are different from each other, and the wiring and the N horizontal transfer electrodes are respectively The overlapping areas may be substantially equal.

  Thereby, even in the case of N (N is an integer of 3 or more) phase driving, the influence of the crosstalk can be reduced by offsetting the influence from the horizontal driving signal applied to each horizontal transfer electrode.

Further, the wiring may be arranged obliquely to the first charge transfer direction from the horizontal transfer unit to the second horizontal transfer section via the horizontal Maten feed unit.

  Thereby, the wiring layout can be designed easily.

  According to the present invention, it is possible to provide a solid-state imaging device capable of reducing the influence of crosstalk and obtaining a correct gradation.

FIG. 1 is a configuration diagram illustrating a schematic configuration of the solid-state imaging device according to the first embodiment. FIG. 2 is a diagram illustrating a wiring layout of the solid-state imaging device. FIG. 3 is an excerpt of the layout of the horizontal transfer unit and the shunt wiring that overlaps the horizontal transfer unit. FIG. 4 is a timing chart showing waveforms of the drive pulses φH1 and φH2 and the drive pulse φV7L. FIG. 5 is a diagram showing another layout of the horizontal transfer unit and the shunt wiring overlapping therewith. FIG. 6 is a configuration diagram illustrating a schematic configuration of the solid-state imaging device according to the second embodiment. FIG. 7 is a diagram illustrating a wiring layout of the solid-state imaging device. FIG. 8 is a timing chart showing waveforms of the drive pulses φH1, φH2, φH3, and φH4 and the drive pulse φV7L. FIG. 9 is a configuration diagram illustrating a schematic configuration of a solid-state imaging apparatus according to the third embodiment. FIG. 10 is a diagram showing a wiring layout. FIG. 11 is a configuration diagram illustrating a schematic configuration of a solid-state imaging apparatus according to the fourth embodiment. FIG. 12 is a diagram showing a wiring layout. FIG. 13 is a timing chart showing waveforms of the drive pulses φH1 to φH3 and the drive pulse φV7L when the horizontal transfer unit is three-phase drive. FIG. 14 is a configuration diagram showing a schematic configuration of a conventional solid-state imaging device. FIG. 15 is a diagram showing details of the wiring layout. FIG. 16 is an excerpt of the layout of the horizontal transfer unit and the shunt wiring that overlaps the horizontal transfer unit. FIG. 17 is a timing chart showing waveforms of drive pulses φH1, φH2, φV7L, and φV8L. FIG. 18 is a diagram illustrating the potential of the distribution transfer unit at each time (t4 to t6). FIG. 19 is a configuration diagram illustrating a configuration example of a solid-state imaging device of a 2ch output method in which two horizontal transfer units arranged in parallel with each other are arranged. FIG. 20 is a configuration diagram illustrating a configuration example of the solid-state imaging device when the horizontal transfer unit is configured by a single layer electrode. FIG. 21A is a diagram illustrating an example of the arrangement of horizontal transfer electrodes. FIG. 21B is a diagram illustrating another example of the arrangement of the horizontal transfer electrodes.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
The solid-state imaging device according to the present embodiment is provided corresponding to each of the plurality of photoelectric conversion units arranged in a matrix and each column of the plurality of photoelectric conversion units, and a plurality of signals read from the corresponding photoelectric conversion unit A vertical transfer unit that transfers charges in the vertical direction; a horizontal transfer unit that has a plurality of horizontal transfer electrodes, and that transfers a plurality of signal charges in the horizontal direction by a horizontal drive signal applied to each of the plurality of horizontal transfer electrodes; Holding a plurality of signal charges transferred from each vertical transfer unit or transferring to the horizontal transfer unit, the hold unit includes a control electrode provided corresponding to each vertical transfer unit And holding the plurality of signal charges according to a voltage applied to the corresponding control electrode, or transferring the signal charge to the horizontal transfer unit, and further providing the solid-state imaging device corresponding to the control electrode And the plurality of horizontal transfer electrodes include at least a first horizontal transfer electrode and a second horizontal transfer electrode, and the wiring includes the first horizontal transfer electrode and the first horizontal transfer electrode. Of the horizontal drive signal applied to the first horizontal transfer electrode and the horizontal applied to the second horizontal transfer electrode. It is different from the phase of the drive signal.

  Thus, the wiring has a coupling capacitance with both the first horizontal transfer electrode and the second horizontal transfer electrode. Here, the phase of the horizontal drive signal applied to the first horizontal transfer electrode is different from the phase of the horizontal drive signal applied to the second horizontal transfer electrode. Therefore, the influence of crosstalk on the signal transmitted through the wiring from the horizontal drive signal applied to the first horizontal transfer electrode and the horizontal drive signal applied to the second horizontal transfer electrode cancels each other and is reduced. The

  As a result, the voltage applied to the control electrode is maintained at a predetermined voltage, so that the solid-state imaging device according to the present embodiment can obtain a correct gradation according to the amount of incident light.

  FIG. 1 is a configuration diagram illustrating a schematic configuration of a solid-state imaging device according to the present embodiment.

  The solid-state imaging device 1a according to the present embodiment includes a pixel unit 2, a distribution transfer unit 5, a horizontal transfer unit 6a, an output unit 7, and a shunt wiring 8a, and specifically, is formed of a single layer. Provided with CCDs having vertical transfer electrodes V1 to V6, single horizontal transfer electrodes H1 and H2, and single transfer transfer electrodes V7L, V8L, V7C, V8C, V7R and V8R, and driving pulses φV1 to φV6. , ΦH1, φH2, φV7L, φV8L, φV7C, φV8C, φV7R and φV8R.

  The pixel unit 2 includes two-dimensionally arranged photoelectric conversion units 3 and a part of the vertical transfer unit 4 that transfers signal charges generated by the photoelectric conversion unit 3 in the vertical direction (downward in the figure). The signal charge generated by the photoelectric conversion unit 3 is transferred to the distribution transfer unit 5.

  The photoelectric conversion unit 3 is, for example, a photodiode that generates signal charges corresponding to incident light. In each of the photoelectric conversion units 3, three color filters of red (R), green (G), and blue (B) are arranged. In the present embodiment, RGB filters are periodically arranged every two pixels in the vertical and horizontal directions.

  The vertical transfer unit 4 is provided for each column of the photoelectric conversion units 3 and transfers a plurality of signal charges read from the corresponding photoelectric conversion units 3 in the vertical direction. The vertical transfer unit 4 is, for example, a six-phase drive, and in the vertical direction, a plurality of signal charges generated by the photoelectric conversion unit 3 according to the driving pulses φV1 to φV6, φV7L, φV7C, φV7R, φV8L, φV8C, and φV8R. Forward. Of the vertical transfer unit 4, a part including the vertical transfer electrodes V 1 to V 6 is included in the pixel unit 2, and a part including the distribution transfer electrodes V 7 L, V 7 C, V 7 R, V 8 L, V 8 C, and V 8 R is included in the distribution transfer unit 5. .

  The distribution transfer unit 5 is a dummy pixel unit in which a plurality of signal charges transferred from the pixel unit 2 are held or transferred to the horizontal transfer unit 6a and formed with independent transfer electrodes separated in the horizontal direction. Specifically, the distribution transfer unit 5 includes a part of the vertical transfer unit 4 and a plurality of signals according to drive pulses φV7L, φV7C, φV7R, φV8L, φV8C, and φV8R applied via the shunt wiring 8a. The charge is held or transferred to the horizontal transfer unit 6a. The distribution transfer unit 5 is a hold unit of the present invention.

  The horizontal transfer unit 6a is a two-phase drive, and transfers a plurality of signal charges transferred from the distribution transfer unit 5 in the horizontal direction according to the drive pulses φH1 and φH2.

  The output unit 7 converts the plurality of signal charges transferred from the horizontal transfer unit 6a into voltages and outputs the voltages.

  The shunt wiring 8a is connected to the distribution transfer unit 5 and transmits drive pulses φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R. Unlike the shunt wiring 808 of the conventional solid-state imaging device 801 shown in FIG. 14, the shunt wiring 8a is arranged obliquely on the horizontal transfer unit 6a.

  FIG. 2 is a diagram illustrating a wiring layout of the solid-state imaging device 1a. In the figure, a wiring layout of the pixel unit 2, the distribution transfer unit 5, the horizontal transfer unit 6a, the shunt wiring 8a, and the bus line wiring 14 is shown.

  Each vertical transfer electrode 11 of the pixel unit 2 is provided for each row of the photoelectric conversion unit 3 and is applied to the vertical transfer electrode shunt wiring 21 electrically connected via the contact 15. Is applied. That is, each vertical transfer electrode 11 corresponds to any one of the vertical transfer electrodes V1 to V6.

  The distribution transfer unit 5 includes a distribution transfer electrode 12, and the distribution transfer electrode 12 is a region that straddles the horizontal transfer unit 6 a via a shunt wiring 8 a and a contact 15 that are disposed across the horizontal transfer unit 6 a (in the drawing). And the bus line wiring 14 on the lower side). The distribution transfer electrode 12 is made of, for example, a single layer of polysilicon, the bus line wiring 14 is made of, for example, aluminum, and the shunt wiring 8a is made of, for example, tungsten. The distribution transfer electrode 12 corresponds to any one of the distribution transfer electrodes V7L, V7C, V7R, V8L, V8C, and V8R, and in response to the application of the drive pulses φV7L, φV7C, φV7R, φV8L, φV8C, and φV8R, Transfer is performed in the vertical direction, and signal charge transfer is controlled independently for each column. The distribution transfer electrodes V7L and V8L are the same, the distribution transfer electrodes V7C and V8C are the same, the distribution transfer electrodes V7R and V8R correspond to the same vertical transfer unit 4, and the distribution transfer electrodes V8L, V8C, and V8R are the vertical transfer unit 4. This corresponds to the last stage. The distribution transfer electrode 12 is a control electrode of the present invention.

  The horizontal transfer unit 6a is a two-phase drive and includes a plurality of horizontal transfer electrodes 13 in the row direction. Each horizontal transfer electrode 13 corresponds to the horizontal transfer electrode H1 to which the drive pulse φH1 is applied or the horizontal transfer electrode H2 to which the drive pulse φH2 is applied, and the horizontal transfer electrodes H1 and the horizontal transfer electrodes H2 are alternately arranged. ing. The horizontal transfer electrode H1 is the first horizontal transfer electrode of the present invention, and the horizontal transfer electrode H2 is the second horizontal transfer electrode of the present invention.

  Here, when the shunt wiring 8a straddles the horizontal transfer electrode 13, the horizontal transfer electrode 13 overlaps with the horizontal transfer electrode 13 to which different drive pulses φH1 and φH2 are applied, that is, the horizontal transfer electrodes H1 and H2. 13 is disposed obliquely.

  FIG. 3 is an excerpt of the layout of the horizontal transfer unit 6a shown in FIG.

  The horizontal transfer electrodes H1 and H2 are the same as the horizontal transfer electrodes 13 shown in FIG. 2, the drive pulse φH1 is applied to the horizontal transfer electrode H1, and the drive pulse φH2 is applied to the horizontal transfer electrode H2. The shunt lines 31a to 36a are the same as the shunt line 8a shown in FIG. 2, and any one of the drive pulses φV7L, φV7C, φV7R, φV8L, φV8C, and φV8R is applied to the shunt lines 31a to 36a, respectively. For example, the driving pulse φV7l for the shunt wiring 31a, the driving pulse φV8L for the shunt wiring 32a, the driving pulse φ7C for the shunt wiring 33a, the driving pulse φV8C for the shunt wiring 34a, the driving pulse φV7R for the shunt wiring 35a, and the shunt wiring 36a. Is applied with a drive pulse φ8R.

  Here, the shunt wirings 31a to 36a are disposed so as to overlap with both the horizontal transfer electrodes H1 and H2.

  In each of the shunt lines 31a to 36a, it is desirable that the area where the shunt line and the horizontal transfer electrode H1 overlap is substantially equal to the area where the shunt line and the horizontal transfer electrode H2 overlap. In other words, it is desirable that the area where the shunt wiring 8a and the horizontal transfer electrode H1 overlap is substantially equal to the area where the shunt wiring 8a and the horizontal transfer electrode H2 overlap. Here, “substantially equal” means that, for example, the difference between the overlapping area of the shunt wiring 8a and the horizontal transfer electrode H1 and the overlapping area of the shunt wiring 8a and the horizontal transfer electrode H2 is 10% or less. Is 5% or less, more specifically 1% or less.

  Next, effects produced by the solid-state imaging device 1a configured as described above will be described.

  FIG. 4 is a timing chart showing waveforms of the drive pulses φH1 and φH2 and the drive pulse φV7L.

  As shown in the figure, when the horizontal transfer unit 6a is in the two-phase drive, the drive pulse φH1 and the drive pulse φH2 are in opposite phases, so that the time when the drive pulse φH1 starts rising and the time when the drive pulse φH2 starts falling Are the same (t1), and the effect ct1 (crosstalk on the positive side of the voltage starting from time t1) due to the crosstalk from the drive pulse φH1 and the effect ct2 (beginning at the same time from the time t1) (Crosstalk on the minus side of the voltage) occurs at the same time. Note that the influence of crosstalk is a voltage generated by the crosstalk.

  Since the influence ct1 due to the crosstalk from the drive pulse φH1 and the influence ct2 from the crosstalk from the drive pulse φH2 have the same amplitude and opposite phase, the influence ct1 due to the crosstalk from the drive pulse φH1 in the drive pulse φV7L The influence ct2 due to the crosstalk from the drive pulse φH2 cancels out.

  Thus, the drive pulse φV7L is not affected by the crosstalk from the drive pulses φH1 and φH2. In FIG. 4, only the driving pulse φV7L is shown among the driving pulses φV7L, φV8L, φV7C, φV8C, φV7R, and φV8R. However, the driving pulses φH1 and φH2 are similarly applied to the driving pulses φV8L, φV7C, φV8C, φV7R, and φV8R. There is no influence from crosstalk from.

  Thus, the solid-state imaging device 1a of the present embodiment is provided corresponding to each of the plurality of photoelectric conversion units 3 arranged in a matrix and the columns of the plurality of photoelectric conversion units 3, and the corresponding photoelectric conversion units 3 are provided. The vertical transfer unit 4 that transfers a plurality of signal charges read from the vertical direction and a plurality of horizontal transfer electrodes 13, and a plurality of signal charges by drive pulses φH 1 and φH 2 applied to the plurality of horizontal transfer electrodes 13, respectively. The horizontal transfer unit 6a for transferring the signal in the horizontal direction and the distribution transfer unit 5 for holding or transferring a plurality of signal charges transferred from each vertical transfer unit 4 to the horizontal transfer unit 6a. The distribution transfer electrode 12 provided corresponding to each vertical transfer unit 4 has a plurality of signal charges depending on the voltage applied to the corresponding distribution transfer electrode 12, or the horizontal transfer unit 6a. The solid-state imaging device 1a further includes a shunt wiring 8a provided corresponding to the distribution / transfer electrode 12 and electrically connected to the corresponding distribution / transfer electrode 12, and the plurality of horizontal transfer electrodes 13 include , Including at least the horizontal transfer electrode H1 and the horizontal transfer electrode H2, and the shunt wiring 8a is disposed so as to overlap the horizontal transfer electrode H1 and the horizontal transfer electrode H2, and the phase of the drive pulse φH1 applied to the horizontal transfer electrode H1; It is different from the phase of the drive pulse φH2 applied to the horizontal transfer electrode H2.

  As a result, the shunt wiring 8a has a coupling capacitance with both the horizontal transfer electrode H1 and the horizontal transfer electrode H2. Here, the phase of the drive pulse φH1 applied to the horizontal transfer electrode H1 is different from the phase of the drive pulse φH2 applied to the horizontal transfer electrode H2. Therefore, the influence of crosstalk on the signals transmitted from the drive pulses φH1 and H2 to the shunt wiring 8a cancels each other and is reduced. As a result, the voltage applied to the distribution transfer electrode 12 is maintained at a predetermined voltage, so that a correct gradation according to the amount of incident light can be obtained.

  Also, the wiring layout can be easily designed by arranging the shunt wiring 8a obliquely on the horizontal transfer portion 6a.

  Further, by making the overlapping area of the shunt wiring 8a and the horizontal transfer electrodes H1 and H2 substantially equal, the influence of the crosstalk from the drive pulse φH1 and the influence of the crosstalk from the drive pulse φH2 are substantially the same. Therefore, the influence on the drive pulses φV7L, φV8L, φV7C, φV8C, φV7R and φV8R due to the crosstalk can be canceled out.

  In the present embodiment, the shunt wiring 8a is disposed obliquely, but as shown in FIG. 5, it is symmetrical from the center of the gap between the horizontal transfer electrode H1 of the drive pulse φH1 and the horizontal transfer electrode H2 of the drive pulse φH2. It is also effective to arrange it so as to spread. That is, when the horizontal transfer unit 6a is two-phase driven, the shunt wirings 31a ′ to 36a ′ are arranged in a direction perpendicular to the charge transfer direction of the horizontal transfer unit 6a, and a part of the adjacent horizontal transfer electrode H1 and the horizontal transfer electrode. The area where the shunt wirings 31a 'to 36a' each overlap with the horizontal transfer electrode H1 and the area where the shunt wirings 31a 'to 36a' overlap with the horizontal transfer electrode H2 are substantially equal. May be.

(Second Embodiment)
The solid-state imaging device according to the present embodiment is different from the solid-state imaging device 1a according to the first embodiment in that the horizontal transfer unit is a four-phase drive, but the solid-state imaging device 1a according to the first embodiment. Similarly to the above, the influence of crosstalk from the drive pulse applied to the horizontal transfer electrode is reduced, and a correct gradation according to the amount of incident light can be obtained.

  FIG. 6 is a configuration diagram illustrating a schematic configuration of the solid-state imaging device according to the present embodiment.

  The solid-state imaging device 1b shown in the figure is substantially the same as the solid-state imaging device 1a of the first embodiment, but the horizontal transfer unit 6b is four-phase driven, and the shunt wirings 8b are adjacent to each other in four different phases. The difference is that they are arranged overlapping the horizontal transfer electrodes. Hereinafter, differences from the first embodiment will be described.

  The horizontal transfer unit 6b is a four-phase drive, and transfers signal charges in the horizontal direction according to the drive pulses φH1 to φH4. In the following, among the plurality of horizontal transfer electrodes 13, the horizontal transfer electrode 13 to which the drive pulse φH1 is applied is the horizontal transfer electrode H1, the horizontal transfer electrode 13 to which the drive pulse φH2 is applied is the horizontal transfer electrode H2, and the drive pulse φH3 is the drive pulse φH3. The applied horizontal transfer electrode 13 may be referred to as a horizontal transfer electrode H3, and the horizontal transfer electrode 13 to which the drive pulse φH4 is applied may be referred to as a horizontal transfer electrode H4. As in the first embodiment, the horizontal transfer electrode 13 is formed of a single layer.

  FIG. 7 is a diagram illustrating a wiring layout of the solid-state imaging device 1b. In the figure, a pixel unit 2, a distribution transfer unit 5, a horizontal transfer unit 6b, a shunt wiring 8b, and a bus line wiring 14 are shown.

  Further, as shown in FIG. 7, the distribution transfer electrode 12 is electrically connected to the bus line wiring 14 below the horizontal transfer portion 6 b through the shunt wiring 8 b and the contact 15.

  The horizontal transfer unit 6 b is a four-phase drive and includes a plurality of horizontal transfer electrodes 13. Each horizontal transfer electrode 13 corresponds to one of the horizontal transfer electrodes H1 to H4, and the horizontal transfer electrodes H1, H2, H3, and H4 are repeatedly arranged in this arrangement.

  The shunt wiring 8b is arranged obliquely with respect to the charge transfer direction from the distribution transfer unit 5 to the horizontal transfer unit 6b, and the horizontal transfer electrode 13 to which different drive pulses φH1 to φH4 are applied, that is, the horizontal transfer electrodes H1 to H4. Overlapping each other. Here, the areas where the shunt wiring 8b and the horizontal transfer electrodes H1 to H4 overlap each other are substantially equal.

  FIG. 8 is a timing chart showing waveforms of drive pulses φH1 to φH4 and drive pulse φV7L.

  As shown in the figure, in the case of four-phase driving, the driving pulses φH1 to φH4 have waveforms that are 90 degrees out of phase with each other. Therefore, the drive pulse φH1 and the drive pulse φH3, and the drive pulse φH2 and the drive pulse φH4 are out of phase with each other. That is, the shunt wiring 8b straddles two sets of horizontal transfer electrodes 13 to which driving pulses having opposite phases are applied.

  Therefore, the time when the drive pulse φH1 starts to rise and the time when the drive pulse φH3 starts to fall are the same (time t2). Occur at the same time.

  Here, since the influence of the crosstalk from the driving pulse φH1 and the influence of the crosstalk from the driving pulse φH3 have the same amplitude and opposite phase, the influence of the crosstalk from the driving pulse φH1 in the driving pulse φV7L. And the influence of crosstalk from the drive pulse φH3 cancel each other.

  Similarly, the time when drive pulse φH2 begins to rise and the time when drive pulse φH4 begins to fall are the same (time t3), and drive pulse φH2 and drive pulse φH2 have the same amplitude and opposite phase. In φV7L, the effects of crosstalk from drive pulse φH2 and the effects of crosstalk from drive pulse φH4 cancel each other.

  As described above, in the solid-state imaging device 1b according to the present embodiment, the horizontal transfer unit 6b is four-phase driven, and the plurality of horizontal transfer electrodes 13 are the horizontal transfer electrode H1, the horizontal transfer electrode H2, the horizontal transfer electrode H3, and the horizontal. Including the transfer electrode H4, the shunt wiring 8b is disposed so as to overlap the drive pulses φH1 and φH3 whose phases are inverted with each other and the horizontal transfer electrodes H1 to H4 to which the drive pulses φH2 and φH4 are applied. As a result, even when the horizontal transfer unit 6b is driven in four phases, the influence of crosstalk from the drive pulses φH1 to φH4 to the drive pulses φV7L, φV7C, φV7R, φV8L, φV8C, and φV8R can be reduced. Correct gradation can be obtained.

(Third embodiment)
The solid-state imaging device of the present embodiment includes a substrate, a solid-state imaging device, a first signal line formed on a first wiring layer on the substrate, to which a signal for controlling the solid-state imaging device is applied, and a first A second signal line formed in the wiring layer and applied with a signal for controlling the solid-state imaging device, and a second signal line formed above the first wiring layer, the first signal line and the second signal A signal line applied to the first signal line and a signal applied to the second signal line. Are in reverse phase, and the area where the third signal line overlaps the first signal line is substantially equal to the area where the third signal line overlaps the second signal line.

  FIG. 9 is a configuration diagram illustrating a schematic configuration of the solid-state imaging device according to the present embodiment.

  The solid-state imaging device 100 according to the present embodiment has a large number of wirings for controlling the driving of the solid-state imaging device 101. For example, the wiring 102 is a wiring that controls vertical transfer, and the wiring 103 controls horizontal transfer. It is used as wiring. For example, aluminum is used for the wiring. Similarly, a part of the wiring 104 that controls the solid-state imaging device 101 is installed so as to straddle the wiring 103.

  FIG. 10 is an enlarged view of a portion X in FIG. 9 and shows a wiring layout. 10, the wiring 111 is an example of the wiring 103 shown in FIG. 9, the wiring 112 is another example of the wiring 103 shown in FIG. 9, and the wiring 113 and the jumper wiring 114 are shown in FIG. 2 is an example of a wiring 104;

  The wiring 111 is formed in the first wiring layer on the substrate, and the wiring 112 is formed in the first wiring layer. The wiring 113 straddles the two wirings of the wiring 111 and the wiring 112 through the jumper wiring 114 and the contact 115. The jumper wiring 114 is formed in the second wiring layer above the first wiring layer, and is disposed so as to overlap the wiring 111 and the wiring 112. The jumper wiring 114 overlaps the wiring 111 and the jumper wiring 114 overlaps the wiring 112. The area is substantially equal.

  Here, for example, the driving pulses φH1 and φH2 of the two-phase driving in FIG. 4 are applied to the wiring 111 and the wiring 112, the driving pulse φH1 is applied to the wiring 111, and the driving pulse φH2 is applied to the wiring 112. The drive pulse φH1 and the drive pulse φH2 are signals for controlling the solid-state imaging device 101.

  For example, tungsten is used for the jumper wiring 114, and has a coupling capacitance between the wiring 111 and the wiring 112 and the jumper wiring 114, and crosstalk occurs.

  However, since the driving pulses φH1 and φH2 having opposite phases are applied to the wiring 111 and the wiring 112, the time when the driving pulse φH1 of the wiring 111 starts rising and the time when the driving pulse φH2 of the wiring 112 starts falling At the same time. The signal transmitted through the jumper wiring 114 includes an influence due to the crosstalk from the driving pulse φH1 of the wiring 111 and an influence due to the crosstalk from the driving pulse φH2 of the wiring 112. By canceling each other, the jumper wiring It is possible to reduce the influence of crosstalk on the signal transmitted through 114. Note that the wiring 111 is a first signal line of the present invention, the wiring 112 is a second signal line of the present invention, and the jumper wiring 114 is a third signal line of the present invention.

  Thus, the solid-state imaging device 100 according to the present embodiment is formed on the substrate, the solid-state imaging device 101, and the first wiring layer on the substrate, and the drive pulse φH1 that controls the solid-state imaging device 101 is applied. The wiring 111, the wiring 112 formed in the first wiring layer, to which the driving pulse φH2 for controlling the solid-state imaging device 101 is applied, and the second wiring layer above the first wiring layer are formed. The wiring 113 is disposed so as to overlap the wiring 112 and to which a signal for controlling the solid-state imaging device 101 is applied. The driving pulse φH1 applied to the wiring 111 and the driving pulse φH2 applied to the wiring 112 are in reverse phase. Therefore, the area where the jumper wiring 114 overlaps the wiring 111 and the area where the jumper wiring 114 overlaps the wiring 112 are substantially equal.

  As a result, the effects of crosstalk from the wiring 111 and the wiring 112 to the jumper wiring 114 cancel each other, so that the signal transmitted through the jumper wiring 114 is not affected by the crosstalk and becomes a predetermined voltage. The element 101 can be controlled appropriately.

(Fourth embodiment)
Compared with the solid-state imaging device 1a according to the first embodiment, the solid-state imaging device according to the present embodiment replaces the sorting transfer unit 5 and the horizontal transfer unit 6a with a four-phase first horizontal transfer unit and a second horizontal transfer unit. A transfer unit, and an inter-horizontal transfer unit disposed between the first horizontal transfer unit and the second horizontal transfer unit. Specifically, the solid-state imaging device according to the present embodiment is provided corresponding to each of the plurality of photoelectric conversion units arranged in a matrix and the columns of the plurality of photoelectric conversion units, and is read from the corresponding photoelectric conversion unit. And a plurality of signals transferred from each vertical transfer unit by a horizontal drive signal applied to each of the plurality of first electrodes. The vertical transfer unit transfers a plurality of signal charges in the vertical direction and a plurality of first electrodes. A first horizontal transfer unit that transfers a part of the charges in the horizontal direction, and the other parts of the plurality of signal charges transferred from each vertical transfer unit are transferred in the horizontal direction in parallel with the first horizontal transfer unit. And a second horizontal transfer unit disposed between the first horizontal transfer unit and the first horizontal transfer unit and the second horizontal transfer unit. Are provided corresponding to the first electrode and the inter-horizontal transfer unit for selectively transferring to And a second horizontal transfer unit having a plurality of second electrodes including at least a first horizontal transfer electrode and a second horizontal transfer electrode, and a plurality of second electrodes. The other part of the plurality of signal charges is transferred by a horizontal drive signal applied to each of the second electrodes, and the wiring is arranged so as to overlap the first horizontal transfer electrode and the second horizontal transfer electrode. The phase of the horizontal drive signal applied to the electrode is different from the phase of the horizontal drive signal applied to the second horizontal transfer electrode.

  Thus, the wiring has a coupling capacitance with both the first horizontal transfer electrode and the second horizontal transfer electrode. Here, the phase of the horizontal drive signal applied to the first horizontal transfer electrode is different from the phase of the horizontal drive signal applied to the second horizontal transfer electrode. Therefore, the influence of crosstalk on the signal transmitted through the wiring from the horizontal drive signal applied to the first horizontal transfer electrode and the horizontal drive signal applied to the second horizontal transfer electrode cancels each other and is reduced. . As a result, the voltage applied to the first electrode is maintained at a predetermined voltage, so that the solid-state imaging device according to the present embodiment can realize high-speed driving that can obtain a correct gradation according to the amount of incident light.

  FIG. 11 is a configuration diagram illustrating a schematic configuration of the solid-state imaging device according to the present embodiment.

  Compared with the solid-state imaging device 1a according to the first embodiment, the solid-state imaging device 301 according to the present embodiment replaces the horizontal transfer unit 6a, the distribution transfer unit 5, the output unit 7, and the shunt wiring 8a with the first horizontal transfer. A unit 306a, a second horizontal transfer unit 306b, an inter-horizontal distribution transfer unit 305, a first output unit 307a, a second output unit 307b, and a shunt wiring 308.

  The first horizontal transfer unit 306a and the second horizontal transfer electrode include a CCD having single-layer horizontal transfer electrodes H1, H2, H3, and H4, and are driven by drive pulses φH1 to φH4.

  The horizontal distribution transfer unit 305 is a horizontal transfer unit according to the present invention, includes a CCD having a horizontal distribution transfer electrode, and is driven by a drive pulse φHHT.

  Further, as in the first embodiment, a distribution transfer unit may be provided between the pixel unit 2 and the first horizontal transfer unit 306a, but is omitted here. Furthermore, since the roles of the first output unit 307a and the second output unit 307b are the same as those of the output unit 7 of the solid-state imaging device 1a according to the first embodiment, description thereof is omitted here.

  Next, the operation of the solid-state imaging device 301 according to this embodiment will be briefly described.

  In the case of a structure in which signals for two lines are transferred simultaneously using two horizontal transfer units, first, the signal charges transferred in the vertical direction by the vertical transfer unit 4 are transferred to the first horizontal transfer unit 306a. . Further, the data is transferred to the second horizontal transfer unit 306b through the horizontal distribution transfer unit 305.

  Subsequently, the signal charges transferred in the vertical direction by the vertical transfer unit 4 are transferred to the first horizontal transfer unit 306a. At this time, the horizontal distribution transfer unit 305 is in a state where no signal is transferred.

  In this state, the first horizontal transfer unit 306a and the second horizontal transfer unit 306b simultaneously transfer the signal charges transferred from the vertical transfer unit 4 in two horizontal directions in accordance with the drive pulses φH1 to H4.

  Thereby, the solid-state imaging device 301 according to the present embodiment can realize high-speed driving.

  FIG. 12 is a diagram illustrating a wiring layout of the solid-state imaging device. In the figure, the wiring layout of the pixel unit 2, the first horizontal transfer unit 306a, the horizontal distribution transfer unit 305, the second horizontal transfer unit 306b, the shunt wiring 308, and the bus line wiring 314 is shown. It is shown.

  The first horizontal transfer unit 306a includes a plurality of horizontal transfer electrodes 313a, and a plurality of signal charges transferred from each vertical transfer unit 4 by drive pulses φH1 to φH4 applied to the plurality of horizontal transfer electrodes 313a. Transfer part horizontally. The horizontal transfer electrode 313a is the first electrode of the present invention.

  The horizontal distribution transfer unit 305 has a horizontal distribution transfer electrode 312, and selectively transfers other portions of the plurality of signal charges transferred to the first horizontal transfer unit 306a to the second horizontal transfer unit 306b. .

  The second horizontal transfer unit 306b is arranged in parallel with the first horizontal transfer unit 306a, and transfers other portions of the plurality of signal charges transferred from the vertical transfer units 4 in the horizontal direction. The second horizontal transfer unit 306b includes a plurality of horizontal transfer electrodes 313b, and transfers other portions of the plurality of signal charges by drive pulses φH1 to φH4 applied to the plurality of horizontal transfer electrodes 313b. The horizontal transfer electrode 313b is the second electrode of the present invention.

  The horizontal transfer electrode 313a of the first horizontal transfer unit 306a is a region straddling the second horizontal transfer unit 306b via a shunt wiring 308 and a contact 315 installed across the second horizontal transfer unit 306b (see FIG. It is electrically connected to the bus line wiring 314 located in the middle and bottom). The horizontal transfer electrode 313a, the horizontal transfer electrode 313b, and the horizontal distribution transfer electrode 312 are made of, for example, a single layer of polysilicon, the bus line wiring 314 is made of, for example, aluminum, and the shunt wiring 308 is made of, for example, tungsten.

  The first horizontal transfer unit 306a and the second horizontal transfer unit 306b are four-phase drive. Here, among the plurality of horizontal transfer electrodes 313a included in the first horizontal transfer unit 306a and the plurality of horizontal transfer electrodes 313b included in the second horizontal transfer unit 306b, the horizontal transfer electrode 313a to which the drive pulse φH1 is applied is horizontally set. The transfer electrode H1, the horizontal transfer electrode 313a to which the drive pulse φH2 is applied, the horizontal transfer electrode H2, the horizontal transfer electrode 313a to which the drive pulse φH3 is applied to the horizontal transfer electrode H3, and the horizontal transfer electrode 313a to which the drive pulse φH4 is applied. The horizontal transfer electrode H4 is used. At this time, in both the first horizontal transfer unit 306a and the second horizontal transfer unit 306b, the horizontal transfer electrode H1, the horizontal transfer electrode H2, the horizontal transfer electrode H3, and the horizontal transfer electrode H4 are sequentially arranged. However, the first horizontal transfer unit 306a and the second horizontal transfer unit 306b are arranged so that their arrangement is shifted by two electrodes. That is, the horizontal transfer electrode of the second horizontal transfer unit 306b in the same column as the horizontal transfer electrode H1 of the first horizontal transfer unit 306a is the horizontal transfer electrode H3.

  Here, when the shunt wiring 308 straddles the horizontal transfer electrode 313b of the second horizontal transfer unit 306b, the horizontal transfer electrode 313a to which the drive pulses φH1, φH2, φH3, and φH4 are applied, that is, the horizontal transfer electrode H1, It is arranged obliquely with respect to the horizontal transfer electrode 313b so as to overlap with any of H2, H3 and H4. In other words, the shunt wiring 308 is arranged obliquely with respect to the signal charge transfer direction from the first horizontal transfer unit 306a to the second horizontal transfer unit 306b via the horizontal distribution transfer unit 305.

  It is desirable that the overlapping areas of the shunt wiring 308 and the horizontal transfer electrodes H1, H2, H3, and H4 included in the second horizontal transfer unit 306b are substantially equal.

  As described above, the solid-state imaging device 301 according to the present embodiment is provided corresponding to each of the plurality of photoelectric conversion units 3 arranged in a matrix and the columns of the plurality of photoelectric conversion units 3, and corresponding photoelectric conversions. The vertical transfer unit 4 that transfers a plurality of signal charges read from the unit 3 in the vertical direction and a plurality of horizontal transfer electrodes 313a, and drive pulses φH1, φH2, φH3 applied to the plurality of horizontal transfer electrodes 313a, and A first horizontal transfer unit 306a that transfers a part of a plurality of signal charges transferred from each vertical transfer unit 4 by φH4 in the horizontal direction and a first horizontal transfer unit 306a are arranged in parallel, and each vertical transfer unit 4 is arranged between the second horizontal transfer unit 306b that transfers the other part of the plurality of signal charges transferred from 4 in the horizontal direction, the first horizontal transfer unit 306a, and the second horizontal transfer unit 306b. Of signal charge Are arranged in correspondence with the horizontal transfer electrode 313a and the horizontal transfer electrode 313a, and the horizontal transfer electrode 313a is electrically connected to the horizontal transfer electrode 313a. The second horizontal transfer unit 306b has a plurality of horizontal transfer electrodes 313b including at least the horizontal transfer electrodes H1 and H2, and is applied to each of the plurality of horizontal transfer electrodes 313b. The other portions of the plurality of signal charges are transferred by the driving pulses φH1, φH2, φH3, and φH4, and the shunt wiring 308 is disposed to overlap the horizontal transfer electrodes H1 and H2, and is applied to the horizontal transfer electrode H1. And the phase of the drive pulse φH2 applied to the second horizontal transfer electrode are different.

  As a result, the shunt wiring 308 has a coupling capacitance for both the horizontal transfer electrode H1 and the horizontal transfer electrode H2. Here, the phase of the drive pulse φH1 applied to the horizontal transfer electrode H1 is different from the phase of the drive pulse φH2 applied to the second horizontal transfer electrode. Therefore, the influence of the crosstalk on the signal transmitted through the shunt wiring 308 from the drive pulse φH1 applied to the horizontal transfer electrode H1 and the drive pulse φH2 applied to the second horizontal transfer electrode cancels each other and is reduced. . As a result, the voltage applied to the horizontal transfer electrode 313a is kept at a predetermined voltage, so that the solid-state imaging device 301 according to the present embodiment can realize high-speed driving that can obtain a correct gradation according to the amount of incident light.

  In the solid-state imaging device 301 according to the present embodiment, the first horizontal transfer unit 306a and the second horizontal transfer unit 306b are four-phase drive, and the horizontal transfer electrode 313b includes four horizontal transfer electrodes H1, H2, H3 and H4 are included, and the shunt wiring 308 has four driving pulses φH1, φH2, φH3, and φH4 applied to the four horizontal transfer electrodes H1, H2, H3, and H4, respectively. The areas where the horizontal transfer electrodes H1, H2, H3 and H4 overlap each other are substantially equal.

  Then, also in the solid-state imaging device 301 according to the present embodiment, as in the second embodiment, the drive pulses φH1 to φH4 have waveforms that are 90 degrees out of phase with each other. Since two sets of horizontal transfer electrodes 313b to which a drive pulse is applied are straddled, the influence of crosstalk from the drive pulse of the second horizontal transfer unit 306b to the drive pulse of the first horizontal transfer unit 306b can be reduced. A correct gradation corresponding to the amount of incident light can be obtained.

  As mentioned above, although demonstrated based on embodiment of this invention, this invention is not limited to these embodiment. Unless it deviates from the meaning of this invention, the form which made | forms this embodiment the various deformation | transformation which those skilled in the art think, and the form constructed | assembled combining the component in different embodiment are also contained in the scope of the present invention.

  For example, when the horizontal transfer unit has an odd phase, reverse-phase crosstalk may not occur at the same time. However, if crosstalk in the direction that cancels the crosstalk before the crosstalk that occurred at a certain time disappears, the effect of the present invention is obtained, so two or more crosstalks are not necessarily generated at the same time. do not have to.

  FIG. 13 is a timing chart showing waveforms of the drive pulses φH1 to φH3 and the drive pulse φV7L when the horizontal transfer unit is three-phase drive.

  The drive pulses φH1 to φH3 are 120 ° out of phase with each other, and the shunt wiring to which the drive pulse φV7L is applied is arranged so as to overlap all the horizontal transfer electrodes to which the different phases are applied. When only the horizontal transfer electrode to which the drive pulse φH1 is applied and the shunt wiring overlap, the waveform of the drive pulse φV7L is a waveform 121, and a plurality of horizontal pulses to which all the drive pulses φH1 to φH3 are applied. The waveform of the drive pulse φV7L when the transfer electrode and the shunt wiring overlap each other is a waveform 122.

  First, due to crosstalk with the drive pulse φH1, both of the waveforms 121 and 122 change gradually to a voltage higher than a predetermined voltage.

  However, when the drive pulse φH3 falls, the waveform 122 is pulled to the low voltage side due to the influence of crosstalk from the drive pulse φH3. On the other hand, since the waveform 121 is not affected by the crosstalk from the drive pulse φH3, it is continuously pulled to the high voltage side by the crosstalk from the drive pulse φH1.

  Next, when the drive pulse φH2 rises, the waveform 122 is pulled to the high voltage side under the influence of crosstalk from the drive pulse φH2. On the other hand, the waveform 121 is not affected by the crosstalk from the drive pulse φH2, and therefore returns to a predetermined voltage as the drive pulse φH1 becomes stable.

  Here, when the difference between the predetermined voltage of the waveform 121 and the maximum voltage changed due to the influence of the crosstalk from the driving pulse φH1 is the maximum difference voltage, the difference voltage generated in the waveform 122 reaches the maximum difference voltage. Before, the waveform 122 changes in the opposite direction under the influence of crosstalk from the driving pulses φH1 to φH3 of different phases.

  Accordingly, even when reverse-phase crosstalk does not occur at the same time, the vertical transfer unit below the transfer electrode 12 is distributed by crosstalk as compared with the case where the shunt wiring overlaps with only one horizontal transfer electrode. 4 can reduce the decrease in saturation and prevent deterioration of image quality.

  In the present embodiment, the shunt wires 8a and 8b are linear, but may be curved or zigzag.

  INDUSTRIAL APPLICABILITY The present invention is useful for a solid-state imaging device used for an image input device such as a video camera, a digital camera, and a camera-equipped mobile phone.

1a, 1b, 100, 301, 801, 901 Solid-state imaging device 2, 802, 902 Pixel unit 3, 803, 903 Photoelectric conversion unit 4, 804, 904 Vertical transfer unit 5, 805 Distribution transfer unit 6a, 6b, 806a Horizontal transfer Part 7, 807 output part 8a, 8b, 21, 31a-36a, 31a'-36a ', 308, 808, 821, 831-836, 908 shunt wiring 11, 311, V1-V6 vertical transfer electrodes 12, 812, V7L , V8L, V7C, V8C, V7R, V8R Sorting transfer electrode 13, 813, 313a, 313b, H1, H2, H3, H4 Horizontal transfer electrode 14, 314, 814 Bus line wiring 15, 115, 315, 815 Contact 101 Solid-state imaging Element 102, 103, 104, 111, 112, 113 Wiring 114 Jumper wiring 3 5,905 Horizontal distribution transfer unit 306a, 906a First horizontal transfer unit 306b, 906b Second horizontal transfer unit 307a, 907a First output unit 307b, 907b Second output unit 312 Horizontal distribution transfer electrode ct1 drive Influence of crosstalk from pulse φH1 ct2 Influence of crosstalk from drive pulse φH2 Q Signal charges φV1 to φV6, φH1, φH2, φV7L, φV8L, φV7C, φV8C, φV7R, φV8R Drive pulse

Claims (11)

A solid-state imaging device,
A plurality of photoelectric conversion units arranged in a matrix;
A vertical transfer unit that is provided corresponding to each column of the plurality of photoelectric conversion units and transfers a plurality of signal charges read from the corresponding photoelectric conversion units in the vertical direction;
A horizontal transfer unit having a plurality of horizontal transfer electrodes and transferring a plurality of signal charges in a horizontal direction by a horizontal drive signal applied to each of the plurality of horizontal transfer electrodes;
Holding a plurality of signal charges transferred from each vertical transfer unit, or holding to transfer to the horizontal transfer unit,
The hold unit is
It has a control electrode provided corresponding to each vertical transfer unit,
Hold the plurality of signal charges according to the voltage applied to the corresponding control electrode, or transfer to the horizontal transfer unit,
The solid-state imaging device further includes a wiring provided corresponding to the control electrode and electrically connected to the corresponding control electrode,
The plurality of horizontal transfer electrodes include at least a first horizontal transfer electrode and a second horizontal transfer electrode,
The wiring is disposed to overlap the first horizontal transfer electrode and the second horizontal transfer electrode,
The phase of the horizontal drive signal applied to the first horizontal transfer electrode is different from the phase of the horizontal drive signal applied to the second horizontal transfer electrode. The solid-state imaging device according to claim 1, wherein an area where the wiring and the first horizontal transfer electrode overlap is substantially equal to an area where the wiring and the second horizontal transfer electrode overlap. The horizontal transfer unit is N (N is an integer of 3 or more) phase drive,
The plurality of horizontal transfer electrodes include N horizontal transfer electrodes,
The wiring is disposed so as to overlap the N horizontal transfer electrodes,
The phases of the horizontal drive signals applied to the N horizontal transfer electrodes are different from each other,
The solid-state imaging device according to claim 2, wherein areas where the wiring and the N horizontal transfer electrodes overlap are substantially equal. The solid-state imaging device according to claim 2, wherein the wiring is disposed obliquely with respect to a charge transfer direction from the hold unit to the horizontal transfer unit. The horizontal transfer unit is a two-phase drive,
The wiring is disposed in a direction perpendicular to a charge transfer direction of the horizontal transfer unit, and overlaps a part of the first horizontal transfer electrode and a part of the second horizontal transfer electrode adjacent to each other. Solid-state imaging device. The solid-state imaging according to claim 1, wherein the phase of the horizontal drive signal applied to the first horizontal transfer electrode and the phase of the horizontal drive signal applied to the second horizontal transfer electrode are opposite in phase. apparatus. A substrate,
A solid-state image sensor;
A first signal line formed on a first wiring layer on the substrate and applied with a signal for controlling the solid-state imaging device;
A second signal line formed in the first wiring layer and applied with a signal for controlling the solid-state imaging device;
A third wiring layer formed on the second wiring layer above the first wiring layer, arranged to overlap the first signal line and the second signal line, and applied with a signal for controlling the solid-state imaging device; Signal line,
The signal applied to the first signal line and the signal applied to the second signal line are in reverse phase,
The area where the third signal line overlaps with the first signal line is substantially equal to the area where the third signal line overlaps with the second signal line. A solid-state imaging device,
A plurality of photoelectric conversion units arranged in a matrix;
A vertical transfer unit that is provided corresponding to each column of the plurality of photoelectric conversion units and transfers a plurality of signal charges read from the corresponding photoelectric conversion units in the vertical direction;
A first horizontal transfer having a plurality of first electrodes and transferring a part of the plurality of signal charges transferred from each vertical transfer unit in a horizontal direction by a horizontal drive signal applied to each of the plurality of first electrodes. And
A second horizontal transfer unit arranged in parallel with the first horizontal transfer unit and transferring the other part of the plurality of signal charges transferred from each vertical transfer unit in the horizontal direction;
The other part of the plurality of signal charges is selectively transferred from the first horizontal transfer unit to the second horizontal transfer unit, between the first horizontal transfer unit and the second horizontal transfer unit. A horizontal transfer section to transfer,
A wiring provided corresponding to the first electrode and electrically connected to the corresponding first electrode;
The second horizontal transfer unit includes a plurality of second electrodes including at least a first horizontal transfer electrode and a second horizontal transfer electrode, and a horizontal drive signal applied to each of the plurality of second electrodes. Transferring the other part of the plurality of signal charges,
The wiring is disposed to overlap the first horizontal transfer electrode and the second horizontal transfer electrode,
The phase of the horizontal drive signal applied to the first horizontal transfer electrode is different from the phase of the horizontal drive signal applied to the second horizontal transfer electrode. The solid-state imaging device according to claim 8, wherein an area where the wiring and the first horizontal transfer electrode overlap is substantially equal to an area where the wiring and the second horizontal transfer electrode overlap. The first and second horizontal transfer units are N (N is an integer of 3 or more) phase drive,
Each of the first and second electrodes includes N horizontal transfer electrodes,
The wiring is disposed so as to overlap the N horizontal transfer electrodes,
The phases of the horizontal drive signals applied to the N horizontal transfer electrodes are different from each other,
The solid-state imaging device according to claim 9, wherein areas where the wiring and the N horizontal transfer electrodes overlap are substantially equal. Wherein the wiring, the first horizontal transfer portion of the horizontal Maten feeding portion and the second according to claim 9 is disposed obliquely to the direction of charge transfer in the horizontal transfer section via the solid Imaging device.

Images