Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JP5695461B2 - Al scrap refining method - Google Patents
[go: Go Back, main page]

JP5695461B2 - Al scrap refining method - Google Patents

Al scrap refining method Download PDF

Info

Publication number
JP5695461B2
JP5695461B2 JP2011066328A JP2011066328A JP5695461B2 JP 5695461 B2 JP5695461 B2 JP 5695461B2 JP 2011066328 A JP2011066328 A JP 2011066328A JP 2011066328 A JP2011066328 A JP 2011066328A JP 5695461 B2 JP5695461 B2 JP 5695461B2
Authority
JP
Japan
Prior art keywords
primary crystal
scrap
molten metal
liquid phase
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011066328A
Other languages
Japanese (ja)
Other versions
JP2012201917A (en
Inventor
千修 棗
千修 棗
石田 斉
斉 石田
徳田 健二
健二 徳田
森下 誠
誠 森下
光宏 阿部
光宏 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP2011066328A priority Critical patent/JP5695461B2/en
Publication of JP2012201917A publication Critical patent/JP2012201917A/en
Application granted granted Critical
Publication of JP5695461B2 publication Critical patent/JP5695461B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

Landscapes

  • Manufacture And Refinement Of Metals (AREA)

Description

本発明は、特にアルミニウム(以下、「Al」と称す)スクラップから不純物元素としてのシリコン(以下、「Si」と称す)を高い割合で除去し、かつ、Al晶出物(以下、「初晶」とも称す)の回収率が高い(すなわち、Al精製体を高体積で得る)Alスクラップの精製方法に関するものである。   In particular, the present invention removes silicon (hereinafter referred to as “Si”) as an impurity element from aluminum (hereinafter referred to as “Al”) scrap at a high rate, and Al crystallized material (hereinafter referred to as “primary crystal”). Is also related to a method for refining Al scrap that has a high recovery rate (that is, obtains an Al refined body in a high volume).

近年、クラッド材などの生産量が増加し、それに伴う屑の量が増加している。しかし、クラッド材は、組成の異なる数種類のAl合金を重ねて作成するため、上記屑から製品への単純なリサイクルは困難である。そこで、上記屑(Alスクラップ)を精製し、不純物元素が取り除かれた再利用可能なAl材を作成する技術が望まれている。   In recent years, the production amount of clad materials and the like has increased, and the amount of scrap accompanying therewith has increased. However, since the clad material is made by stacking several kinds of Al alloys having different compositions, it is difficult to simply recycle the scrap to the product. Therefore, a technique for refining the scrap (Al scrap) and creating a reusable Al material from which impurity elements are removed is desired.

上記要望に応える技術として、いくつかの方法が提案されている。   Several techniques have been proposed as a technique that meets the above-mentioned demand.

例えば、特許文献1には、容器にSiを0.5〜10質量%含むAl合金スクラップ溶湯を収容し、溶湯の液相線以下でかつ固相線以上の温度まで溶湯のほぼ全域を20℃/min以下の速度で冷却させて初晶を発生させ、次いで容器の上部から押し固め板を下降させて、Al晶出物(初晶)の集積体と濃化液相とを形成し、次いで押し固め板の下部面に対し2〜15MPaの圧力に相当する荷重を押し固め板に付与することで押し固めた初晶を濃化液相から分離して回収するAlスクラップの精製方法が開示されている。また、回収された初晶および/または濃化液相を、他の原料Al溶湯と混合することを特徴とするAlスクラップの再利用方法も開示されている。   For example, in Patent Document 1, an Al alloy scrap molten metal containing 0.5 to 10% by mass of Si is contained in a container, and almost the entire area of the molten metal is 20 ° C. up to a temperature below the liquidus of the molten metal and above the solidus. The primary crystal is generated by cooling at a speed of / min or less, and then the compaction plate is lowered from the upper part of the container to form an aggregate of Al crystallized product (primary crystal) and a concentrated liquid phase, and then Disclosed is an Al scrap refining method for separating and recovering primary crystals compacted from the concentrated liquid phase by applying a load corresponding to a pressure of 2 to 15 MPa to the bottom surface of the compacted plates. ing. Also disclosed is a method of reusing Al scrap, characterized in that the recovered primary crystal and / or concentrated liquid phase is mixed with other raw material Al molten metal.

また、特許文献2には、容器内にAlスクラップ溶湯を収容し、このAlスクラップ溶湯を液相線以下でかつ固相線以上の温度まで冷却させ、次に容器の上部から押し固め板を下降させて、Al晶出物(初晶)の集積体と濃化液相とを形成し、次に押し固め板により初晶の集積体に所定圧力を付与することで、圧搾された初晶の集積体と濃化液相とに分離し、押し固め板を濃化液相より上方に上昇させ、次に濃化液相に対して上記冷却・圧力付与・分離工程を繰り返すことにより、連続圧搾された初晶の集積体が積層したAl精製体を回収するAlスクラップの精製方法が開示されている。     In Patent Document 2, an Al scrap molten metal is accommodated in a container, the Al scrap molten metal is cooled to a temperature below the liquidus and above the solidus, and then the press plate is lowered from the upper part of the container. And forming an aggregate of Al crystallized product (primary crystal) and a concentrated liquid phase, and then applying a predetermined pressure to the aggregate of primary crystal by a compaction plate, Separation into an aggregate and a concentrated liquid phase, raising the pressing plate above the concentrated liquid phase, and then repeating the above cooling, pressure application and separation steps on the concentrated liquid phase An Al scrap refining method is disclosed in which an Al refined body in which the primary crystal aggregates are stacked is recovered.

特開平07−54061号公報Japanese Patent Application Laid-Open No. 07-54061 特開2010−132984号公報JP 2010-132984 A

しかしながら、上記特許文献1、2に開示された技術には、以下のような問題点が存在する。   However, the techniques disclosed in Patent Documents 1 and 2 have the following problems.

すなわち、特許文献1に記載のAlスクラップの精製方法に関する技術は、Siの除去率(以下、「Si除去率」とも称す)と初晶の回収率(以下、「Al回収率」とも称す)とが相反する関係にあり、高いSi除去率と高いAl回収率を同時に満足するAl精製体を得ること{以下、「高いSi除去率のAl精製体(圧搾された初晶の集積体)を高体積(高Al回収率)で得ること」とも言う}はできない。したがって、例えば高いSi除去率となる条件でAlスクラップの精製を行った場合には、Alスクラップ溶湯から高体積なAl精製体を得るまでに極めて時間がかかり、生産性が悪い。   That is, the technique relating to the Al scrap refining method described in Patent Document 1 includes Si removal rate (hereinafter also referred to as “Si removal rate”) and primary crystal recovery rate (hereinafter also referred to as “Al recovery rate”). To obtain an Al refined body satisfying both a high Si removal rate and a high Al recovery rate {hereinafter referred to as “a high Si removal rate Al refined body (compressed primary crystal aggregate) It can't be said “to obtain with volume (high Al recovery rate)”. Therefore, for example, when the Al scrap is refined under conditions that provide a high Si removal rate, it takes a very long time to obtain a high volume Al refined body from the Al scrap molten metal, resulting in poor productivity.

また、特許文献2に記載のAlスクラップの精製方法に関する技術は、上記特許文献1に開示された技術の問題点を解消し、Alスクラップから高いSi除去率のAl精製体(圧搾された初晶の集積体)を高体積(高Al回収率)で得ることができる点では優れている。しかし、高体積なAl精製体を得るためには、圧搾回数が3回必要であり、生産効率の点でまだ難がある。   Moreover, the technique regarding the refinement | purification method of Al scrap of patent document 2 eliminates the problem of the technique disclosed by the said patent document 1, Al refined body (pressed primary crystal of high Si removal rate from Al scrap) In that it can be obtained in a high volume (high Al recovery rate). However, in order to obtain a high volume Al refined body, the number of times of pressing is required three times, and there is still difficulty in terms of production efficiency.

本発明の目的は、Alスクラップから所定の高いSi除去率のAl精製体(圧搾された初晶の集積体)を高体積(高Al回収率)で、かつ、高効率で生産できるAlスクラップの精製方法を提供することにある。   An object of the present invention is to provide an Al scrap that can produce an Al refined body (pressed primary crystal aggregate) having a predetermined high Si removal rate from Al scrap with a high volume (high Al recovery rate) and high efficiency. It is to provide a purification method.

この目的を達成するために、第1発明に係るAlスクラップの精製方法は、
容器内に収容されたAlスクラップ溶湯を精製する方法において、
前記Alスクラップ溶湯は、Siを0.5〜3質量%、Fe、Cu、Mn、Mg、Cr、Zn、Tiよりなる群から選択された少なくとも1種類以上の元素を総量で2質量%以下含有するものであり、
容器中のAlスクラップ溶湯を液相線以下でかつ固相線以上の温度まで冷却させて、前記Alスクラップ溶湯内にAl晶出物(以下、「初晶」と称す)を発生させる初晶発生工程と、
前記初晶発生工程で発生した初晶を含むAlスクラップ溶湯が収容された容器の上部から液相排出孔が設けられた押し固め板を下降させて、前記初晶の集積体と濃化液相とに分離するとともに、当該押し固め板により前記初晶の集積体に圧力を付与することで、圧搾された初晶の集積体と濃化液相を得る圧搾工程と、を有し、
前記初晶発生工程で発生した初晶を含むAlスクラップ溶湯に対して、圧力が負荷される圧力負荷部と前記押し固め板の下方の液相を前記液相排出孔以外からも排出するための圧力が負荷されない圧力無負荷部とが存在するように前記押し固め板を下降させるものであり、
前記圧力は、4MPa以上7MPa以下であり、かつ、圧力付与時間は、10分以上であり、前記押し固め板を下降させない状態における溶湯面の全体面積に対する前記圧力無負荷部の面積率は、5〜40%であることを特徴とするAlスクラップの精製方法である。
In order to achieve this object, the method for refining Al scrap according to the first invention comprises:
In the method of refining the Al scrap molten metal accommodated in the container,
The Al scrap molten metal contains 0.5 to 3% by mass of Si and 2% by mass or less in total of at least one element selected from the group consisting of Fe, Cu, Mn, Mg, Cr, Zn, and Ti. Is what
Primary crystal generation that generates Al crystallized material (hereinafter referred to as “primary crystal”) in the Al scrap molten metal by cooling the Al scrap molten metal in the vessel to a temperature below the liquidus and above the solidus. Process,
Lowering the compaction plate provided with the liquid phase discharge holes from the upper part of the container containing the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step, the primary crystal aggregate and the concentrated liquid phase And compressing the primary crystal aggregate by applying pressure to the primary crystal aggregate by the pressing plate, and obtaining a concentrated liquid phase.
For discharging the liquid phase below the pressure loading portion and the compaction plate other than the liquid phase discharge hole to the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step. The pressing plate is lowered so that there is a pressure-unloaded portion where no pressure is applied ,
The pressure is 4 MPa or more and 7 MPa or less, the pressure application time is 10 minutes or more, and the area ratio of the pressure-unloaded portion with respect to the entire area of the molten metal surface in a state where the pressing plate is not lowered is 5 It is the refinement | purification method of Al scrap characterized by being -40% .

第2発明に係るAlスクラップの精製方法は、第1発明に係るAlスクラップの精製方法において、
前記容器は、有底筒状であり、
前記押し固め板は、外側面に少なくとも1箇所以上の平面部が設けられた円盤状を呈したことを特徴とする。
The method for refining Al scrap according to the second invention is the method for refining Al scrap according to the first invention ,
The container has a bottomed cylindrical shape,
The pressing plate has a disk shape in which at least one flat portion is provided on the outer surface.

第3発明に係るAlスクラップの精製方法は、第1または第2発明に係るAlスクラップの精製方法において、
前記Alスクラップ溶湯内に初晶を発生させる初晶発生工程には、攪拌冷却が用いられることを特徴とする。
The method for refining Al scrap according to the third invention is the method for refining Al scrap according to the first or second invention ,
Stirring cooling is used in the primary crystal generation step of generating primary crystals in the Al scrap molten metal.

以上のように、本発明は、
容器内に収容されたAlスクラップ溶湯を精製する方法において、
前記Alスクラップ溶湯は、Siを0.5〜3質量%、Fe、Cu、Mn、Mg、Cr、Zn、Tiよりなる群から選択された少なくとも1種類以上の元素を総量で2質量%以下含有するものであり、
容器中のAlスクラップ溶湯を液相線以下でかつ固相線以上の温度まで冷却させて、前記Alスクラップ溶湯内にAl晶出物(以下、「初晶」と称す)を発生させる初晶発生工程と、
前記初晶発生工程で発生した初晶を含むAlスクラップ溶湯が収容された容器の上部から液相排出孔が設けられた押し固め板を下降させて、前記初晶の集積体と濃化液相とに分離するとともに、当該押し固め板により前記初晶の集積体に圧力を付与することで、圧搾された初晶の集積体と濃化液相を得る圧搾工程と、を有し、
前記初晶発生工程で発生した初晶を含むAlスクラップ溶湯に対して、圧力が負荷される圧力負荷部と前記押し固め板の下方の液相を前記液相排出孔以外からも排出するための圧力が負荷されない圧力無負荷部とが存在するように前記押し固め板を下降させることを特徴とする。
As described above, the present invention
In the method of refining the Al scrap molten metal accommodated in the container,
The Al scrap molten metal contains 0.5 to 3% by mass of Si and 2% by mass or less in total of at least one element selected from the group consisting of Fe, Cu, Mn, Mg, Cr, Zn, and Ti. Is what
Primary crystal generation that generates Al crystallized material (hereinafter referred to as “primary crystal”) in the Al scrap molten metal by cooling the Al scrap molten metal in the vessel to a temperature below the liquidus and above the solidus. Process,
Lowering the compaction plate provided with the liquid phase discharge holes from the upper part of the container containing the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step, the primary crystal aggregate and the concentrated liquid phase And compressing the primary crystal aggregate by applying pressure to the primary crystal aggregate by the pressing plate, and obtaining a concentrated liquid phase.
For discharging the liquid phase below the pressure loading portion and the compaction plate other than the liquid phase discharge hole to the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step. The pressing plate is lowered so that there is a pressure-unloaded portion where no pressure is applied.

したがって、本発明によれば、圧搾工程において、圧力無負荷部側からも液相を積極的に逃がすことができるため、圧搾の度合いが小さいながらも濃化液相の排出が促進され、Alスクラップから所定の高いSi除去率のAl精製体(圧搾された初晶の集積体)を高体積(高Al回収率)で、かつ、高効率で生産できる。   Therefore, according to the present invention, in the squeezing step, the liquid phase can be actively released from the pressure unloaded portion side, so that the discharge of the concentrated liquid phase is promoted while the degree of squeezing is small, and Al scrap Thus, an Al refined body having a predetermined high Si removal rate (compressed primary crystal aggregate) can be produced in a high volume (high Al recovery rate) and with high efficiency.

本発明の実施形態1のAlスクラップの精製方法のプロセスを時系列的に説明するための模式図である。It is a schematic diagram for demonstrating the process of the refinement | purification method of the Al scrap of Embodiment 1 of this invention in time series. 図1に示すプロセスを用いた時のAl−Siの模式平衡状態図である。FIG. 2 is a schematic equilibrium diagram of Al—Si when the process shown in FIG. 1 is used. 図1(c)に示す工程を詳細に説明するための模式説明図である。It is a schematic explanatory drawing for demonstrating in detail the process shown in FIG.1 (c). 図3(b)に示す初晶を含むAlスクラップ溶湯のAA断面模式図である。It is AA cross-sectional schematic diagram of Al scrap molten metal containing the primary crystal shown in FIG.3 (b). 本発明例および比較例における、回収固相(Al精製体)の厚さとSi除去率の関係をそれぞれ説明するための説明図である。It is explanatory drawing for demonstrating the relationship between the thickness of the collection | recovery solid phase (Al refinement | purification body) and Si removal rate in the example of this invention and a comparative example, respectively. 本発明の実施形態2のAlスクラップの精製方法における特徴的工程を詳細に説明するための模式説明図である。It is a schematic explanatory drawing for demonstrating in detail the characteristic process in the refinement | purification method of the Al scrap of Embodiment 2 of this invention. 図6(b)に示す初晶を含むAlスクラップ溶湯のBB断面模式図である。It is a BB cross-sectional schematic diagram of Al scrap molten metal containing the primary crystal shown in FIG.6 (b).

(本発明に係るAlスクラップの精製方法の構成)
本発明に係るAlスクラップの精製方法は、
容器内に収容されたAlスクラップ溶湯を精製する方法において、
前記Alスクラップ溶湯は、Siを0.5〜3質量%、Fe、Cu、Mn、Mg、Cr、Zn、Tiよりなる群から選択された少なくとも1種類以上の元素を総量で2質量%以下含有するものであり、
容器中のAlスクラップ溶湯を液相線以下でかつ固相線以上の温度まで冷却させて、前記Alスクラップ溶湯内にAl晶出物(以下、「初晶」と称す)を発生させる初晶発生工程と、
前記初晶発生工程で発生した初晶を含むAlスクラップ溶湯が収容された容器の上部から液相排出孔が設けられた押し固め板を下降させて、前記初晶の集積体と濃化液相とに分離するとともに、当該押し固め板により前記初晶の集積体に圧力を付与することで、圧搾された初晶の集積体と濃化液相を得る圧搾工程と、を有し、
前記初晶発生工程で発生した初晶を含むAlスクラップ溶湯に対して、圧力が負荷される圧力負荷部と前記押し固め板の下方の液相を前記液相排出孔以外からも排出するための圧力が負荷されない圧力無負荷部とが存在するように前記押し固め板を下降させることを特徴とする。
(Configuration of Al scrap refining method according to the present invention)
The method for refining Al scrap according to the present invention is as follows:
In the method of refining the Al scrap molten metal accommodated in the container,
The Al scrap molten metal contains 0.5 to 3% by mass of Si and 2% by mass or less in total of at least one element selected from the group consisting of Fe, Cu, Mn, Mg, Cr, Zn, and Ti. Is what
Primary crystal generation that generates Al crystallized material (hereinafter referred to as “primary crystal”) in the Al scrap molten metal by cooling the Al scrap molten metal in the vessel to a temperature below the liquidus and above the solidus. Process,
Lowering the compaction plate provided with the liquid phase discharge holes from the upper part of the container containing the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step, the primary crystal aggregate and the concentrated liquid phase And compressing the primary crystal aggregate by applying pressure to the primary crystal aggregate by the pressing plate, and obtaining a concentrated liquid phase.
For discharging the liquid phase below the pressure loading portion and the compaction plate other than the liquid phase discharge hole to the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step. The pressing plate is lowered so that there is a pressure-unloaded portion where no pressure is applied.

以上のような構成であるため、本発明は、
圧搾工程において、圧力無負荷部側からも液相を積極的に逃がすことができるため、圧搾の度合いが小さいながらも濃化液相の排出が促進され、Alスクラップから所定の高いSi除去率のAl精製体(圧搾された初晶の集積体)を高体積(高Al回収率)で、かつ、高効率で生産できる。
Si除去率=(初期Alスクラップ溶湯のSi濃度−圧搾された初晶の集積体のSi濃度)/初期Alスクラップ溶湯のSi濃度×100 … (1)
Al回収率=圧搾された初晶の集積体の体積/初期Alスクラップ溶湯の体積×100
… (2)
Because of the configuration as described above, the present invention
In the squeezing step, the liquid phase can be actively released from the pressure-unloaded portion side, so that the discharge of the concentrated liquid phase is promoted while the degree of squeezing is small, and a predetermined high Si removal rate from the Al scrap. Al refined body (compressed primary crystal aggregate) can be produced with high volume (high Al recovery rate) and high efficiency.
Si removal rate = (Si concentration of initial Al scrap molten metal−Si concentration of pressed primary crystal aggregate) / Si concentration of initial Al scrap molten metal × 100 (1)
Al recovery rate = pressed primary crystal aggregate volume / initial Al scrap molten metal volume × 100
(2)

以下に、上記構成に至った理由について述べる。   The reason for reaching the above configuration will be described below.

本発明者達は、如何にしたらAlスクラップから所定の高いSi除去率(例えば、約50〜60%)のAl精製体(圧搾された初晶の集積体)を高体積(高Al回収率)で、かつ、高効率(例えば、1回の圧搾)で生産できるのか鋭意研究を行った。   The present inventors have made it possible to obtain a high volume (high Al recovery rate) of an Al refined body (compressed primary crystal aggregate) having a predetermined high Si removal rate (for example, about 50 to 60%) from Al scrap. In addition, intensive research was conducted as to whether it could be produced with high efficiency (for example, one press).

その結果、上述したような押し固め板を用いて、初晶発生工程で発生した初晶を含むAlスクラップ溶湯を圧搾することにより、圧力無負荷部側からも液相を積極的に逃がすことができるため、圧搾の度合いが小さいながらも濃化液相の排出が促進され、Alスクラップから上記Si除去率のAl精製体(圧搾された初晶の集積体)を高体積(例えば、直径100mm−厚さ200〜300mm)で、かつ、1回の圧搾で生産できることを見出した。   As a result, by pressing the Al scrap molten metal containing the primary crystal generated in the primary crystal generation process using the above-described compaction plate, the liquid phase can be actively released from the pressure-unloaded portion side. Therefore, the discharge of the concentrated liquid phase is promoted while the degree of pressing is small, and the Al purified body (pressed primary crystal aggregate) having the above-mentioned Si removal rate from Al scrap has a high volume (for example, a diameter of 100 mm − It has been found that it can be produced by a single pressing with a thickness of 200-300 mm.

以下、本発明のAlスクラップの精製方法の一実施形態について、図面を参照しながら説明する。   Hereinafter, an embodiment of the Al scrap refining method of the present invention will be described with reference to the drawings.

(実施形態1)
図1は本発明の実施形態1のAlスクラップの精製方法のプロセスを時系列的に説明するための模式図であって、(a)は容器1内にAlスクラップ溶湯2を収容した状態を示す図、(b)はAlスクラップ溶湯2を液相線以下でかつ固相線以上の温度まで冷却させて、Alスクラップ溶湯2内に初晶3aを発生させる初晶発生工程図、(c)は初晶3aを含むAlスクラップ溶湯2が収容された容器1の上部からスタンパー4を下降させ、初晶3aを含むAlスクラップ溶湯2の上層部へスタンパー4の下端に設けられている押し固め板4aを接触させることにより、圧力が負荷される圧力負荷部アと圧力が負荷されない圧力無負荷部イが発生した状態を示す図、(d)はスタンパー4をさらに下降させ、初晶3aの集積体と濃化液相6aとに分離するとともに、押し固め板4aにより初晶3aの集積体に圧力を付与することで、圧搾された初晶の集積体(以下、「回収固相5a」とも称す)と濃化液相6aを得る圧搾工程図である。なお、図1(d)の後には、スタンパー4を上昇させて、押し固め板4aを容器1外へ取り出す工程があるが、ここでは図示を省略する。
(Embodiment 1)
FIG. 1 is a schematic diagram for chronologically explaining the process of the Al scrap refining method according to Embodiment 1 of the present invention. FIG. 1 (a) shows a state in which an Al scrap molten metal 2 is accommodated in a container 1. FIG. 4B is a primary crystal generation process diagram in which the Al scrap molten metal 2 is cooled to a temperature below the liquidus and above the solidus to generate the primary crystal 3a in the Al scrap molten metal 2. FIG. The stamper 4 is lowered from the upper part of the container 1 in which the Al scrap molten metal 2 containing the primary crystal 3a is accommodated, and the pressing plate 4a provided at the lower end of the stamper 4 to the upper layer part of the Al scrap molten metal 2 containing the primary crystal 3a. FIG. 8D is a diagram showing a state in which a pressure load part a to which pressure is applied and a pressure unload part a to which pressure is not applied are generated by bringing the stamper 4 into contact with each other. FIG. And concentrated liquid phase 6a In addition, by applying pressure to the aggregate of the primary crystal 3a by the compaction plate 4a, the compressed primary crystal aggregate (hereinafter also referred to as “recovered solid phase 5a”) and the concentrated liquid phase 6a FIG. In addition, after FIG.1 (d), there exists a process which raises the stamper 4 and takes out the pressing board 4a out of the container 1, but illustration is abbreviate | omitted here.

図2は、図1に示すプロセスを用いた時のAl−Siの模式平衡状態図である。   FIG. 2 is a schematic equilibrium diagram of Al—Si when the process shown in FIG. 1 is used.

以下に、本実施形態のAlスクラップの精製方法のプロセスを図1〜図4を用いて、時系列的に詳細に説明する。   Below, the process of the refinement | purification method of the Al scrap of this embodiment is demonstrated in detail in time series using FIGS. 1-4.

図1(a)において、容器1は円筒部1b(詳細は、後記図3参照)の内径が100mm、底部1a(詳細は、後記図3参照)からの高さが500mmの有底筒状の黒鉛製であり、この容器1の周囲にはヒータ(図示せず)と冷却装置(図示せず)が配設されている。また、この容器1の中にはAl−1.5質量%Si−0.1質量%Feの成分(この組成を初期組成C(図2参照)で示す)からなる10kgの合金(Alスクラップ)が溶解され収容されている(Alスクラップ溶湯2の高さをhで示す)。また、このAlスクラップ溶湯2の高さhは、400mmである。 In FIG. 1A, the container 1 has a cylindrical shape with a bottom having a cylindrical portion 1b (for details, see FIG. 3 to be described later) having an inner diameter of 100 mm and a height from the bottom portion 1a (for details, see FIG. 3 to be described later). It is made of graphite, and a heater (not shown) and a cooling device (not shown) are disposed around the container 1. Further, in this container 1, a 10 kg alloy (Al scrap) made of a component of Al-1.5% by mass Si-0.1% by mass Fe (this composition is indicated by an initial composition C 0 (see FIG. 2)). ) Is melted and accommodated (the height of the Al scrap molten metal 2 is indicated by h 0 ). The height h 0 of the Al scrap melt 2 is 400 mm.

図1(b)において、Alスクラップ溶湯2を攪拌しながら、図2に示す液相線以下でかつ固相線以上の温度T(例えば、640℃)まで上記ヒータと冷却装置を調節しながら冷却させて、Alスクラップ溶湯2内に初晶3a(初晶濃度:Cs1(図2参照))を発生させる。 In FIG. 1B, while stirring the Al scrap molten metal 2, while adjusting the heater and the cooling device to a temperature T 1 (for example, 640 ° C.) below the liquidus line and above the solidus line shown in FIG. By cooling, the primary crystal 3a (primary crystal concentration: C s1 (see FIG. 2)) is generated in the Al scrap molten metal 2.

図1(c)において、上記温度T(ここでは、この温度を圧搾温度と称す。)で初晶3aを含むAlスクラップ溶湯2が収容された容器1の上部から支持部4bの先端に外径90mmの鉄製の押し固め板4a(詳細形状については、後記図3の説明を参照)を有したスタンパー4をゆっくり下降させ、初晶3aを含むAlスクラップ溶湯2の上層部へ押し固め板4aを接触させることにより、初晶3aを含むAlスクラップ溶湯2に圧力が負荷される圧力負荷部アと圧力が負荷されない圧力無負荷部イを発生させる(詳細形状については、後記図4の説明を参照)。 In FIG. 1 (c), the temperature T 1 (herein, this temperature is referred to as pressing temperature) is externally attached from the upper part of the container 1 containing the Al scrap molten metal 2 containing the primary crystal 3 a to the tip of the support part 4 b. The stamper 4 having an iron compaction plate 4a having a diameter of 90 mm (refer to the description of FIG. 3 to be described later for the detailed shape) is slowly lowered to the compaction plate 4a to the upper layer portion of the Al scrap molten metal 2 containing the primary crystal 3a. Are caused to generate a pressure load part a in which pressure is applied to the Al scrap molten metal 2 containing the primary crystal 3a and a pressure unload part a in which no pressure is applied (for the detailed shape, see FIG. 4 to be described later). reference).

図1(d)において、図1(c)に示す状態からスタンパー4をさらに下降させ、初晶3aの集積体と濃化液相6aとに分離するとともに、押し固め板4aにより初晶3aの集積体に圧力(例えば、6.5MPa)を圧力付与時間として、例えば、10分間付与することで、圧搾された初晶の集積体(以下、「回収固相5a」またはAl精製体とも称す)と濃化液相6a{液相濃度:CL1(図2参照)}を得る。これにより、1回の圧搾で高体積(厚さh)の所定の高いSi除去率の回収固相5a(Al精製体)が得られる。 In FIG. 1 (d), the stamper 4 is further lowered from the state shown in FIG. 1 (c) to separate the primary crystal 3a aggregate into the concentrated liquid phase 6a, and the primary crystal 3a is separated by the compaction plate 4a. By applying pressure (for example, 6.5 MPa) to the aggregate as a pressure application time, for example, for 10 minutes, the primary crystal aggregate that has been squeezed (hereinafter also referred to as “recovered solid phase 5a” or an Al refined body) And concentrated liquid phase 6a {liquid phase concentration: C L1 (see FIG. 2)}. Thereby, the recovery solid phase 5a (Al refined body) of the predetermined high Si removal rate of high volume (thickness h1) is obtained by one pressing.

図3は、上述した図1(c)に示す工程を詳細に説明するための模式説明図である。図3において、(a)は押し固め板4aを上方から見た形状、(b)は上述したような初晶3aを含むAlスクラップ溶湯2に圧力が負荷される圧力負荷部アと圧力が負荷されない圧力無負荷部イを発生させた場合の液相の流れ{矢印(→)}を縦断面において模式的に示したものである。また、外径90mmの押し固め板4aの紙面に向かって右側には平面部4eが1箇所設けられている。これにより、押し固め板4aのLが75mm、押し固め板4aの平面部4eと容器1の円筒部1bの内壁との最長間隙Lが20mmの円盤状を呈する。また、押し固め板4aの紙面に向かって左側の外側面4dと容器1の円筒部1bの内壁との間には5mmの間隙が存在する。また、押し固め板4aには、直径7mmの液相排出孔4cが10個設けられている。なお、前記5mmの間隙は、スタンパー4を上下させる際に、押し固め板4aを破損させないための遊びであり、本発明で言うところの「押し固め板4aの下方の液相を液相排出孔4c以外から積極的に排出するためのものではない。 FIG. 3 is a schematic explanatory diagram for explaining in detail the process shown in FIG. In FIG. 3, (a) is a shape of the pressing plate 4a as viewed from above, (b) is a pressure load portion a where pressure is applied to the Al scrap molten metal 2 containing the primary crystal 3a as described above, and pressure is applied. FIG. 3 schematically shows a liquid phase flow {arrow (→)} in a longitudinal section when a pressure-unloaded portion a that is not generated is generated. Further, one flat portion 4e is provided on the right side of the pressing plate 4a having an outer diameter of 90 mm toward the paper surface. Thus, it exhibits L 1 of the soil compacting plate 4a is 75 mm, the maximum gap L 2 is 20mm disc-shaped with the inner wall of the flat portion 4e and the container 1 of the cylindrical portion 1b of the soil compacting plate 4a. Further, a gap of 5 mm exists between the left outer surface 4d and the inner wall of the cylindrical portion 1b of the container 1 with respect to the paper surface of the pressing plate 4a. In addition, the compaction plate 4a is provided with ten liquid phase discharge holes 4c having a diameter of 7 mm. The gap of 5 mm is a play for preventing the pressing plate 4a from being damaged when the stamper 4 is moved up and down. The term “liquid phase below the pressing plate 4a is used as a liquid phase discharge hole” in the present invention. It is not intended to actively discharge from other than 4c.

図4は、図3(b)に示す初晶3aを含むAlスクラップ溶湯2のAA断面模式図であり、上述したような円盤状を呈した押し固め板4aが初晶3aを含むAlスクラップ溶湯2の上層部へ接触した場合の圧力負荷部アと圧力が負荷されない圧力無負荷部イの詳細な形状を模式的に表している。このような圧力状態で、押し固め板4aを下降させていくと、図3(b)に示すように、液相排出孔4cを通って真上に液相が排出されるとともに、押し固め板4aの下方の液相が圧力無負荷部イ側に向かって積極的に、かつ、多量に移動し排出される。これにより、圧搾の度合いが小さいながらも濃化液相の排出が促進され、Alスクラップから所定の高いSi除去率のAl精製体(圧搾された初晶の集積体)を高体積(高Al回収率)で、かつ、高効率で生産できる。   FIG. 4 is a schematic cross-sectional view of the AA cross section of the Al scrap molten metal 2 containing the primary crystal 3a shown in FIG. 3 (b), and the Al scrap molten metal including the disk-shaped pressing plate 4a as described above includes the primary crystal 3a. 2 schematically shows the detailed shape of the pressure load part a when the upper layer part 2 is contacted and the pressure unload part a where no pressure is applied. When the pressing plate 4a is lowered in such a pressure state, the liquid phase is discharged directly through the liquid phase discharge hole 4c as shown in FIG. The liquid phase below 4a moves positively toward the pressure-unloaded portion (a) side and is discharged in a large amount. As a result, the discharge of the concentrated liquid phase is promoted even though the degree of squeezing is small, and a high volume (high Al recovery) of Al refined body (compressed primary crystal aggregate) having a predetermined high Si removal rate from Al scrap. Rate) and high efficiency.

本実施形態においては、図3に示すような形状の押し固め板4aを用いる例について説明したが、必ずしもこれに限定されるものではない。すなわち、目標とする所定の高いSi除去率と所定の高体積(高Al回収率)を満足するAl精製体(圧搾された初晶の集積体)を高効率で生産するために、
初晶発生工程で発生した初晶を含むAlスクラップ溶湯に対して、押し固め板により圧力が負荷される圧力負荷部と前記押し固め板の下方の液相を前記押し固め板に設けられた液相排出孔以外からも排出するための圧力が負荷されない圧力無負荷部とが存在するように前記押し固め板を下降させるように構成されていればよい。
In this embodiment, although the example using the compression plate 4a of a shape as shown in FIG. 3 was demonstrated, it is not necessarily limited to this. That is, in order to produce an Al refined body (compressed primary crystal aggregate) that satisfies a predetermined high Si removal rate and a predetermined high volume (high Al recovery rate) with high efficiency,
A liquid provided in the compaction plate with a pressure loading portion to which pressure is applied by the compaction plate and a liquid phase below the compaction plate with respect to the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step What is necessary is just to be comprised so that the said compression plate may be lowered | hung so that the pressure unloading part which is not loaded with the pressure for discharging | emitting from other than a phase discharge hole may exist.

なお、本実施形態においては、図3に示すように、押し固め板4aの紙面に向かって右側に平面部4eを1箇所設けた例について説明したが、必ずしもこれに限定されるものではなく、押し固め板の下降方向に対して直交する断面(以下、「横断面」と称す)が、容器の内周線で囲まれた形状より小さく、かつ、前記形状の面積に対して所定割合の面積を有する条件を満足するものであれば、押し固め板の外側面に複数の平面部が設けられた円盤状を呈した構成とすることも可能である(この例に関しては、後記実施形態2で詳細を説明する)。また、押し固め板4aの外側面に設ける形状も必ずしも平面部に限定されるものではない。また、容器や押し固め板の形状・大きさにもよるが、溶湯面の全体面積(押し固め板を下降させない状態)に対する圧力無負荷部の面積率は、5〜40%程度にすることができる。   In addition, in this embodiment, as shown in FIG. 3, although the example which provided one plane part 4e on the right side toward the paper surface of the pressing board 4a was demonstrated, it is not necessarily limited to this, The cross section perpendicular to the descending direction of the pressing plate (hereinafter referred to as “transverse section”) is smaller than the shape surrounded by the inner peripheral line of the container, and an area of a predetermined ratio with respect to the area of the shape Can be configured to have a disk shape in which a plurality of flat portions are provided on the outer side surface of the compression plate (this example is described in Embodiment 2 below). Explain in detail). Further, the shape provided on the outer side surface of the pressing plate 4a is not necessarily limited to the flat portion. Moreover, although it depends on the shape and size of the container and the compaction plate, the area ratio of the pressure-unloaded portion with respect to the entire area of the molten metal surface (the state where the compaction plate is not lowered) should be about 5 to 40%. it can.

また、押し固め板を下降させて、初晶の集積体と濃化液相とに分離するとともに、この押し固め板により前記初晶の集積体に圧力を付与することで、圧搾された初晶の集積体と濃化液相を得る圧搾工程において、この圧力は、例えば4MPa以上7MPa以下であり、かつ、圧力付与時間は、10分以上であるのが好ましい。何故ならば、前記圧力が4MPa未満では十分なSi除去率が得られず、また7MPaを超えてもSi除去率に大きな変化がないためである。また、前記圧力付与時間に関しても、5分では圧搾される初晶の集積体から十分に液相は排出しきれず、8分でほぼ液相排出の効果は一定となるが、安全率を考慮すると10分以上が適当である。   Further, the compaction plate is lowered to separate the primary crystal aggregate and the concentrated liquid phase, and by applying pressure to the primary crystal aggregate by the compaction plate, the compressed primary crystal In the pressing step for obtaining the aggregate and the concentrated liquid phase, the pressure is preferably 4 MPa or more and 7 MPa or less, and the pressure application time is preferably 10 minutes or more. This is because if the pressure is less than 4 MPa, a sufficient Si removal rate cannot be obtained, and if it exceeds 7 MPa, there is no significant change in the Si removal rate. In addition, regarding the pressure application time, the liquid phase cannot be sufficiently discharged from the primary crystal aggregate to be pressed in 5 minutes, and the effect of liquid phase discharge is almost constant in 8 minutes. Ten minutes or more is appropriate.

また、Alスクラップ溶湯内に初晶を発生させる工程において、液が静止した状態で冷却させるよりも攪拌冷却させる方が、初晶の集積体に圧力を付与し、圧搾された初晶の集積体と濃化液相に分離する場合に、圧搾される初晶の集積体から液相部分を排出させる経路が複雑にならないため、より好ましい。何故ならば、液が静止した状態で冷却させた場合は、発生する初晶の形状がデンドライトになるが、攪拌冷却させた場合は、発生する初晶の形状が丸くなるからである。   In addition, in the step of generating primary crystals in the Al scrap molten metal, stirring and cooling rather than cooling the liquid in a stationary state applies pressure to the primary crystal aggregates, and the primary crystal aggregates that have been squeezed And the concentrated liquid phase are more preferable because the path for discharging the liquid phase portion from the pressed primary crystal aggregate is not complicated. This is because when the liquid is cooled in a stationary state, the shape of the generated primary crystal becomes dendrite, but when the liquid is stirred and cooled, the shape of the generated primary crystal is rounded.

上述した図1〜図4に示す本発明に係るAlスクラップの精製方法において、図3に示すような円盤状を呈した押し固め板4aを用いて、1回の圧搾で回収固相5a(Al精製体)の厚さhが下記表1に示す各値{試験No.1〜5(発明例)に相当}になるような試験を実施した。また、比較のために、平面部4eを有さない押し固め板4a(すなわち、特許文献2に開示されたような断面が円形の押し固め板;外径90mmの鉄製で、直径7mmの液相排出孔4cを20個有する)を用いて、1回の圧搾で回収固相5a(Al精製体)の厚さhが下記表1に示す各値{試験No.6〜20(比較例)に相当}になるような試験を実施した。その結果、試験No.1、2においては、回収固相5a(Al精製体)の厚さhがともに210mmで、Si除去率はそれぞれ62.1%、61.7%、試験No.3においては、回収固相5a(Al精製体)の厚さhが205mmで、Si除去率は64.8%、試験No.4においては、回収固相5a(Al精製体)の厚さhが300mmで、Si除去率は53.0%、試験No.5においては、回収固相5a(Al精製体)の厚さhが300mmで、Si除去率は50.1%となった(下記表1及び図5参照)。しかし、比較例においては、Si除去率が50%を超えるものは、回収固相5a(Al精製体)の厚さhが何れも150mm以下である(下記表1の試験No.6〜16、18、20及び図5参照)。また、比較例において、回収固相5a(Al精製体)の厚さhが190mm、210mmと比較的厚いものは、Si除去率がそれぞれ40.7%、39.2%のものしか得られなかった(下記表1の試験No.17、19及び図5参照)。このように本発明のAlスクラップの精製方法を用いたことで、初めてAlスクラップから所定の高いSi除去率(例えば、50%以上)の回収固相5a(Al精製体)を高体積(例えば、直径100mm−厚さ200〜300mm)で、かつ、高効率(例えば、1回の圧搾)で生産できた。 In the Al scrap refining method according to the present invention shown in FIGS. 1 to 4 described above, the recovered solid phase 5a (Al The thickness h 1 of the purified product) is the value shown in Table 1 below {Test No. 1 to 5 (invention example)}. Further, for comparison, a pressing plate 4a having no flat portion 4e (that is, a pressing plate having a circular cross section as disclosed in Patent Document 2; a liquid phase made of iron having an outer diameter of 90 mm and a diameter of 7 mm). The thickness h 1 of the recovered solid phase 5a (Al refined body) is expressed by each value shown in Table 1 below (test No. 1) using 20 discharge holes 4c). 6 to 20 (comparative example)}. As a result, test no. 1 and 2, the thickness h 1 of the recovered solid phase 5a (Al purified product) was 210 mm, the Si removal rates were 62.1% and 61.7%, respectively, and test Nos. 3, the thickness h 1 of the recovered solid phase 5a (Al purified product) was 205 mm, the Si removal rate was 64.8%, and the test No. 3 4, the thickness h 1 of the recovered solid phase 5a (Al purified product) is 300 mm, the Si removal rate is 53.0%, and test No. 4 is obtained. 5, the thickness h 1 of the recovered solid phase 5a (Al purified product) was 300 mm, and the Si removal rate was 50.1% (see Table 1 and FIG. 5 below). However, in the comparative example, the Si removal rate exceeds 50%, and the thickness h 1 of the recovered solid phase 5a (Al purified product) is 150 mm or less (test Nos. 6 to 16 in Table 1 below). , 18, 20 and FIG. 5). In the comparative example, when the thickness h 1 of the recovered solid phase 5a (Al refined body) is relatively thick at 190 mm and 210 mm, only Si removal rates of 40.7% and 39.2% are obtained, respectively. (See Test Nos. 17 and 19 and Table 5 in Table 1 below). As described above, by using the Al scrap refining method of the present invention, the recovered solid phase 5a (Al refined body) having a predetermined high Si removal rate (for example, 50% or more) from Al scrap for the first time has a high volume (for example, (Diameter: 100 mm—thickness: 200 to 300 mm) and high efficiency (for example, one press).

Figure 0005695461
Figure 0005695461

(実施形態2)
上述した図1〜図4に示す本発明に係るAlスクラップの精製方法において、
容器1の円筒部1bの内径を1000mmにした場合、上記実施形態1と同じ比率(0.2=最長間隙L/押し固め板4aの外径)になるように押し固め板4aを設計すると以下のような問題が発生する。すなわち、最長間隙Lが大きくなり過ぎ、圧搾工程において、初晶3aが液相とともに押し固め板4aの上方に多量に逃げてしまう。そこで、このような場合にも対応可能な本発明に係る他のAlスクラップの精製方法を提案する。以下に、図6、図7を用いて、その詳細を説明する。なお、本実施形態において、上記実施形態1で用いた精製装置と同一の構成要素につては、同一番号を付与して、詳細な説明は省略し、異なる部分についてのみ詳述する。
(Embodiment 2)
In the method for refining Al scrap according to the present invention shown in FIGS.
When the inner diameter of the cylindrical portion 1b of the container 1 is 1000 mm, the pressing plate 4a is designed so as to have the same ratio as in the first embodiment (0.2 = longest gap L 2 / outer diameter of the pressing plate 4a). The following problems occur. That is, the longest gap L 2 becomes too large, in the expression step, the primary crystal 3a resulting in a large amount of relief over the compacted plate 4a press together with the liquid phase. Therefore, another Al scrap refining method according to the present invention that can cope with such a case is proposed. Details will be described below with reference to FIGS. In the present embodiment, the same components as those of the purification apparatus used in the first embodiment are given the same reference numerals, detailed description thereof is omitted, and only different portions are described in detail.

図6は本発明の実施形態2のAlスクラップの精製方法における特徴的工程を詳細に説明するための模式説明図であって、(a)は押し固め板4aを上方から見た形状、(b)は初晶3aを含むAlスクラップ溶湯2に圧力が負荷される圧力負荷部ウ(詳細は、後記図7参照)と圧力が負荷されない圧力無負荷部エ(詳細は、後記図7参照)を発生させた場合の液相の流れ{矢印(→)}を縦断面において模式的に示したものである。本実施形態2で用いる押し固め板は、外径990mmの押し固め板4aの紙面に向かって右側及び左側に平面部4e、4fがそれぞれ1箇所設けられている。これにより、押し固め板4aのLが900mm、押し固め板4aの平面部4e、4fと容器1の円筒部1bの内壁との最長間隙Lがそれぞれ50mmの円盤状を呈する。また、押し固め板4aの紙面に向かって上方と下方の外側面4dと容器1の円筒部1bの内壁との間には上記実施形態1と同様に5mmの間隙が存在する。また、押し固め板4aには、直径7mmの液相排出孔4cが1000個設けられている。なお、前記5mmの間隙は、上記実施形態1と同様にスタンパー4を上下させる際に、押し固め板4aを破損させないための遊びであり、本発明で言うところの「押し固め板4aの下方の液相を液相排出孔4c以外から積極的に排出するためのものではない。 FIG. 6 is a schematic explanatory view for explaining in detail the characteristic steps in the Al scrap refining method of Embodiment 2 of the present invention, wherein (a) is a shape of the pressing plate 4a viewed from above, (b ) Is a pressure load section C (for details, refer to FIG. 7 to be described later) where pressure is applied to the Al scrap molten metal 2 containing the primary crystal 3a and a pressure unload section D (for details, refer to FIG. 7 for details). The flow of the liquid phase {arrow (→)} when generated is schematically shown in a longitudinal section. The pressing plate used in the second embodiment is provided with one flat portion 4e and 4f on the right side and the left side of the pressing plate 4a having an outer diameter of 990 mm. Thus, L 3 of the soil compacting plate 4a exhibits 900 mm, flat portions 4e of the soil compacting plate 4a, the longest gap L 4 is 50mm in each disc-shaped and 4f and the container 1 of the inner wall of the cylindrical portion 1b. Further, a gap of 5 mm exists between the upper and lower outer surfaces 4d toward the paper surface of the pressing plate 4a and the inner wall of the cylindrical portion 1b of the container 1 as in the first embodiment. In addition, the pressing plate 4a is provided with 1000 liquid phase discharge holes 4c having a diameter of 7 mm. The gap of 5 mm is a play for preventing the presser plate 4a from being damaged when the stamper 4 is moved up and down, as in the first embodiment, and is referred to as “below the press plate 4a” in the present invention. It is not intended to positively discharge the liquid phase from other than the liquid phase discharge hole 4c.

図7は、図6(b)に示す初晶3aを含むAlスクラップ溶湯2のBB断面模式図であり、上述したような平面部4e、4fを有した円盤状を呈した押し固め板4aが初晶3aを含むAlスクラップ溶湯2の上層部へ接触した場合の圧力負荷部ウと圧力が負荷されない圧力無負荷部エの詳細な形状を模式的に表している。このような圧力状態で、押し固め板4aを下降させていくと、図6(b)に示すように、液相排出孔4cを通って真上に液相が排出されるとともに、押し固め板4aの下方の液相が左右の圧力無負荷部エ側に向かって積極的に、かつ、多量に移動し排出される。ただし、このような圧搾を行なう場合は、所定寸法のL(例えば、50mm)を満足し、かつ、2箇所設けられているため、押し固め板4aの下方の液相が左右の圧力無負荷部エ側に向かって積極的に、かつ、多量に移動し排出されるが、初晶3aが液相とともに押し固め板4aの上方に多量に逃げてしまうようなことはない。したがって、円筒部1bの内径が1000mmの大きな容器1を用いて圧搾する場合にも、圧搾の度合いが小さいながらも濃化液相の排出が促進され、Alスクラップから所定の高いSi除去率のAl精製体(圧搾された初晶の集積体)をより高体積(高Al回収率)で、かつ、高効率で生産できる。 FIG. 7 is a schematic BB cross-sectional view of the Al scrap molten metal 2 containing the primary crystal 3a shown in FIG. 6 (b), and the pressing plate 4a having a disk shape having the flat portions 4e and 4f as described above is provided. The detailed shape of the pressure load part C when the upper part of the Al scrap molten metal 2 including the primary crystal 3a is contacted and the pressure unload part D where no pressure is applied is schematically shown. When the pressing plate 4a is lowered in such a pressure state, as shown in FIG. 6B, the liquid phase is discharged directly through the liquid phase discharge hole 4c, and the pressing plate is pressed. The liquid phase below 4a is positively moved toward the left and right pressure-unloaded portions d side and is moved and discharged in large quantities. However, when performing such pressing, since L 4 (for example, 50 mm) of a predetermined dimension is satisfied and two places are provided, the liquid phase below the compression plate 4a is left and right pressure-unloaded. The primary crystal 3a does not escape to a large amount above the compaction plate 4a together with the liquid phase. Accordingly, even when the container 1 is squeezed using a large container 1 having an inner diameter of 1000 mm, the discharge of the concentrated liquid phase is promoted while the degree of squeezing is small, and Al having a predetermined high Si removal rate from Al scrap. A refined body (compressed primary crystal aggregate) can be produced in a higher volume (high Al recovery rate) and with higher efficiency.

なお、実施形態1、2においては、容器1の円筒部1bの内径が100mmと1000mmの例について説明したが、必ずしもこれに限定されるものではない。ただし、内径が100mm未満ではAl精製体(圧搾された初晶の集積体)の生成量が少なく生産性が悪い。また、内径が1000mmを超えると押し固め板4aの下方の液相の圧力無負荷部側に向かって移動する経路が長くなり過ぎ、十分なSi除去率が得られなくなる。したがって、容器1の円筒部1bの内径は、100mm〜1000mmが適当である。また、実施形態1、2においては、容器1の横断面が円形の例について説明したが、必ずしもこれに限定されるものではなく、様々な横断面形状(例えば、矩形)を採用することも可能である。   In addition, in Embodiment 1, 2, although the internal diameter of the cylindrical part 1b of the container 1 demonstrated the example which is 100 mm and 1000 mm, it is not necessarily limited to this. However, when the inner diameter is less than 100 mm, the production amount of the Al refined body (pressed primary crystal aggregate) is small and the productivity is poor. On the other hand, if the inner diameter exceeds 1000 mm, the path moving toward the pressure-unloaded portion of the liquid phase below the compression plate 4a becomes too long, and a sufficient Si removal rate cannot be obtained. Accordingly, the inner diameter of the cylindrical portion 1b of the container 1 is suitably 100 mm to 1000 mm. In the first and second embodiments, the example in which the cross section of the container 1 is circular has been described. However, the present invention is not necessarily limited thereto, and various cross sectional shapes (for example, rectangles) may be employed. It is.

また、容器1に収納されるAlスクラップ溶湯2の深さは、「押し固め板の下方の液相をこの押し固め板に設けられた液相排出孔以外からも排出する」という本発明の技術思想に照らし、かつ、前記液相排出孔からの前記液相の排出量に比して上述した圧力無負荷部側からの前記液相の排出量の優位性を確保する点を踏まえると、例えば、容器1の横断面が円形の場合、容器1の内径の2倍以上が望ましい。   Moreover, the depth of the Al scrap molten metal 2 accommodated in the container 1 is the technology of the present invention that “the liquid phase below the pressing plate is discharged from other than the liquid phase discharge holes provided in the pressing plate”. In light of the idea and taking into account the point of securing the superiority of the discharge amount of the liquid phase from the pressure-unloaded portion side as compared with the discharge amount of the liquid phase from the liquid phase discharge hole, for example, When the cross section of the container 1 is circular, it is desirable that the inner diameter of the container 1 is twice or more.

また、上記実施形態1、2のように、例えば容器1の横断面が円形、かつ容器1の円筒部1bの内径が100mm〜1000mmの場合、上述したLは内径の0.2倍以上50mm以下を満足させるのが好ましい。何故ならば、Lが内径の0.2倍未満では、液相排出孔からの液相の排出量に比して上述した圧力無負荷部側からの前記液相の排出量の優位性が確保できなくなるからである。また、Lを50mm以下とするのは、圧搾工程において、初晶3aが液相とともに押し固め板4aの上方に多量に逃げてしまうのを防止するためである。 Further, as in the first and second embodiments, for example, when the cross section of the container 1 is circular and the inner diameter of the cylindrical portion 1b of the container 1 is 100 mm to 1000 mm, the above-described L 2 is 0.2 times the inner diameter or more and 50 mm. It is preferable to satisfy the following. This is because when L 2 is less than 0.2 times the inner diameter, the liquid phase discharge amount from the pressure-unloaded portion side described above is superior to the liquid phase discharge amount from the liquid phase discharge hole. This is because it cannot be secured. Further, the reason why L 2 is set to 50 mm or less is to prevent the primary crystal 3a from escaping above the compaction plate 4a together with the liquid phase in the pressing step.

また、上記実施形態1、2においては、Alスクラップ溶湯2の成分がAl−1.5質量%Si−0.1質量%Feである例について説明したが、必ずしもこれに限定されるものではなく、Alスクラップ溶湯は、Siを0.5〜3質量%、Fe、Cu、Mn、Mg、Cr、Zn、Tiよりなる群から選択された少なくとも1種類以上の元素を総量で2質量%以下含有したものに対して、本願発明の技術思想を適応可能である。   Moreover, in the said Embodiment 1, 2, although the example whose component of Al scrap molten metal 2 was Al-1.5 mass% Si-0.1 mass% Fe was demonstrated, it is not necessarily limited to this. The Al scrap molten metal contains 0.5 to 3% by mass of Si and 2% by mass or less in total of at least one element selected from the group consisting of Fe, Cu, Mn, Mg, Cr, Zn, and Ti. The technical idea of the present invention can be applied to the above.

1 容器
1a 底部
1b 円筒部
2 Alスクラップ溶湯
3a 初晶
4 スタンパー
4a 押し固め板
4b 支持部
4c 液相排出孔
4d 外側面
4e、4f 平面部
5a 回収固相
6a 濃化液相
DESCRIPTION OF SYMBOLS 1 Container 1a Bottom part 1b Cylindrical part 2 Al scrap molten metal 3a Primary crystal 4 Stamper 4a Compaction board 4b Support part 4c Liquid phase discharge | emission hole 4d Outer side surface 4e, 4f Planar part 5a Recovery solid phase 6a Concentrated liquid phase

Claims (3)

容器内に収容されたAlスクラップ溶湯を精製する方法において、
前記Alスクラップ溶湯は、Siを0.5〜3質量%、Fe、Cu、Mn、Mg、Cr、Zn、Tiよりなる群から選択された少なくとも1種類以上の元素を総量で2質量%以下含有するものであり、
容器中のAlスクラップ溶湯を液相線以下でかつ固相線以上の温度まで冷却させて、前記Alスクラップ溶湯内にAl晶出物(以下、「初晶」と称す)を発生させる初晶発生工程と、
前記初晶発生工程で発生した初晶を含むAlスクラップ溶湯が収容された容器の上部から液相排出孔が設けられた押し固め板を下降させて、前記初晶の集積体と濃化液相とに分離するとともに、当該押し固め板により前記初晶の集積体に圧力を付与することで、圧搾された初晶の集積体と濃化液相を得る圧搾工程と、を有し、
前記初晶発生工程で発生した初晶を含むAlスクラップ溶湯に対して、圧力が負荷される圧力負荷部と前記押し固め板の下方の液相を前記液相排出孔以外からも排出するための圧力が負荷されない圧力無負荷部とが存在するように前記押し固め板を下降させるものであり、
前記圧力は、4MPa以上7MPa以下であり、かつ、圧力付与時間は、10分以上であり、前記押し固め板を下降させない状態における溶湯面の全体面積に対する前記圧力無負荷部の面積率は、5〜40%であることを特徴とするAlスクラップの精製方法。
In the method of refining the Al scrap molten metal accommodated in the container,
The Al scrap molten metal contains 0.5 to 3% by mass of Si and 2% by mass or less in total of at least one element selected from the group consisting of Fe, Cu, Mn, Mg, Cr, Zn, and Ti. Is what
Primary crystal generation that generates Al crystallized material (hereinafter referred to as “primary crystal”) in the Al scrap molten metal by cooling the Al scrap molten metal in the vessel to a temperature below the liquidus and above the solidus. Process,
Lowering the compaction plate provided with the liquid phase discharge holes from the upper part of the container containing the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step, the primary crystal aggregate and the concentrated liquid phase And compressing the primary crystal aggregate by applying pressure to the primary crystal aggregate by the pressing plate, and obtaining a concentrated liquid phase.
For discharging the liquid phase below the pressure loading portion and the compaction plate other than the liquid phase discharge hole to the Al scrap molten metal containing the primary crystal generated in the primary crystal generation step. The pressing plate is lowered so that there is a pressure-unloaded portion where no pressure is applied ,
The pressure is 4 MPa or more and 7 MPa or less, the pressure application time is 10 minutes or more, and the area ratio of the pressure-unloaded portion with respect to the entire area of the molten metal surface in a state where the pressing plate is not lowered is 5 A method for refining Al scrap, characterized in that it is -40% .
前記容器は、有底筒状であり、
前記押し固め板は、外側面に少なくとも1箇所以上の平面部が設けられた円盤状を呈したことを特徴とする請求項1に記載のAlスクラップの精製方法。
The container has a bottomed cylindrical shape,
2. The method for refining Al scrap according to claim 1, wherein the pressing plate has a disk shape in which at least one flat portion is provided on an outer surface. 3.
前記Alスクラップ溶湯内に初晶を発生させる初晶発生工程には、攪拌冷却が用いられることを特徴とする請求項1または2に記載のAlスクラップの精製方法。 The method for purifying Al scrap according to claim 1 or 2 , wherein stirring cooling is used in the primary crystal generation step of generating primary crystals in the Al scrap molten metal.
JP2011066328A 2011-03-24 2011-03-24 Al scrap refining method Active JP5695461B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011066328A JP5695461B2 (en) 2011-03-24 2011-03-24 Al scrap refining method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011066328A JP5695461B2 (en) 2011-03-24 2011-03-24 Al scrap refining method

Publications (2)

Publication Number Publication Date
JP2012201917A JP2012201917A (en) 2012-10-22
JP5695461B2 true JP5695461B2 (en) 2015-04-08

Family

ID=47183232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011066328A Active JP5695461B2 (en) 2011-03-24 2011-03-24 Al scrap refining method

Country Status (1)

Country Link
JP (1) JP5695461B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5662857B2 (en) * 2011-03-25 2015-02-04 株式会社神戸製鋼所 Al scrap refining method
CN113357913B (en) * 2021-06-29 2022-12-09 吉利硅谷(谷城)科技有限公司 Electromagnetic heating furnace for purifying polycrystalline silicon

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754065A (en) * 1993-08-11 1995-02-28 Furukawa Electric Co Ltd:The Refining method and recycling method of aluminum scrap

Also Published As

Publication number Publication date
JP2012201917A (en) 2012-10-22

Similar Documents

Publication Publication Date Title
JP6185644B2 (en) Process for producing tantalum alloys
JP5695461B2 (en) Al scrap refining method
JP2016514212A5 (en)
JP5662857B2 (en) Al scrap refining method
KR102921726B1 (en) Method for removing impurities and method for manufacturing ingots
JP5537249B2 (en) Al scrap refining method
JP5302645B2 (en) Al scrap refining method
JP2019520984A (en) High quality, void and inclusion free alloy wire
JP2003221626A (en) Method for manufacturing pure titanium ingot, and pure titanium ingot
JP4309675B2 (en) Method for producing titanium alloy
JP5486181B2 (en) Continuous metal purification method
JP3533433B2 (en) Metal purification method
CN102921928B (en) A kind of method of titanium sponge production titanium or titanium alloy casting
JP3001080B2 (en) Aluminum dross recovery processing method and apparatus, and aluminum dross lump
JPH07316680A (en) Aluminum dross recovery processing method and device, and aluminum dross lump or processing agent for steel production
JP2010265546A (en) Method for refining metal
JPH09263853A (en) Method for purifying Al
RU2590441C1 (en) Briquette for alloying of aluminium alloy
JP3490808B2 (en) Metal purification method and apparatus
JP3782415B2 (en) High purity sponge titanium material and method for producing titanium ingot
JPH07166259A (en) Al scrap refining method
JP5142610B2 (en) Manufacturing method of high cleanliness steel
JP2003221629A (en) Consumable electrode
RU211562U1 (en) BRIQUETTE FOR ALLOYING ALUMINUM-BASED ALLOY
JP2004263217A (en) Consumable electrode for melting alloy ingot, and its producing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130902

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140909

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141107

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150206

R150 Certificate of patent or registration of utility model

Ref document number: 5695461

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150