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JP5954558B2 - Method for producing polymer membrane and electropolymerization apparatus for polymer membrane production - Google Patents
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JP5954558B2 - Method for producing polymer membrane and electropolymerization apparatus for polymer membrane production - Google Patents

Method for producing polymer membrane and electropolymerization apparatus for polymer membrane production Download PDF

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JP5954558B2
JP5954558B2 JP2011196219A JP2011196219A JP5954558B2 JP 5954558 B2 JP5954558 B2 JP 5954558B2 JP 2011196219 A JP2011196219 A JP 2011196219A JP 2011196219 A JP2011196219 A JP 2011196219A JP 5954558 B2 JP5954558 B2 JP 5954558B2
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polymer film
conductive substrate
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信介 稲木
信介 稲木
壽雄 淵上
壽雄 淵上
豊 石黒
豊 石黒
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Nippon Chemi Con Corp
Tokyo Institute of Technology NUC
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Description

本発明は、高分子膜の製造方法、該製造方法より製造される高分子膜を有する高分子膜付き導電性基板、および該製造方法に使用される高分子膜製造用電解重合装置に関する。   The present invention relates to a method for producing a polymer film, a conductive substrate with a polymer film having a polymer film produced by the production method, and an electropolymerization apparatus for producing a polymer film used in the production method.

従来から、基板上に高分子膜(特に、導電性高分子膜)を製造する方法として電解重合法が知られている(特許文献1)。電解重合法とは、電極表面上でモノマーを電気化学的に電解酸化または電解還元して重合反応を生じさせる方法である。例えば、電解重合法によりポリピロールを成膜するには、ピロールモノマーと支持電解質とを含む電解液が収容された電解重合槽内に平板状の陽極と陰極との電極の対を挿入し、電極間に電圧を印加することによって、陽極酸化により生じるラジカルカチオン種のカップリングにより重合が進行し、陽極上に膜状のポリピロールが析出する。
電解重合法はその手順が簡便で、かつ、導電率の高いポリマーを合成することができるため、太陽電池などの種々の機能性デバイスの部材を製造する方法として有用である。
Conventionally, an electrolytic polymerization method is known as a method for producing a polymer film (particularly a conductive polymer film) on a substrate (Patent Document 1). The electrolytic polymerization method is a method in which a monomer is electrochemically electrolytically oxidized or electrolytically reduced on the electrode surface to cause a polymerization reaction. For example, in order to form a polypyrrole film by an electrolytic polymerization method, a pair of plate-like anode and cathode electrodes are inserted into an electrolytic polymerization tank containing an electrolytic solution containing a pyrrole monomer and a supporting electrolyte, By applying a voltage to the polymer, polymerization proceeds by coupling of radical cation species generated by anodic oxidation, and a film-like polypyrrole is deposited on the anode.
The electrolytic polymerization method is useful as a method for producing members of various functional devices such as solar cells because the procedure is simple and a polymer having high conductivity can be synthesized.

従来法においては、電解重合を行う際には図7に示すような高分子膜製造用電解重合装置300が使用されていた。該装置300では、電解液302が収容された電解重合槽304に平板状の陰極306および陽極308を挿入したものであり、陰極306および陽極308は図示しない外部供給端子を介して電源310に接続している。   In the conventional method, an electrolytic polymerization apparatus 300 for producing a polymer film as shown in FIG. 7 has been used when performing electrolytic polymerization. In the apparatus 300, a flat cathode 306 and an anode 308 are inserted into an electropolymerization tank 304 containing an electrolytic solution 302. The cathode 306 and the anode 308 are connected to a power source 310 via an external supply terminal (not shown). doing.

特開昭60−137923号公報JP-A-60-137923

従来法において、例えば、多数枚の平板状の陽極308表面上に高分子膜(例えば、ポリピロール、ポリチオフェン)を製造する際には、一回の電解重合終了後に高分子膜付き陽極基板を外部給電端子から外し、新たな他の平板状の陽極308に再度外部給電端子を接続する必要があった。つまり、高分子膜付き陽極基板を一枚作製終了する毎に、平板状の陽極308に外部供給端子を接続し直す必要があり、作業が煩雑であるために、工業的な生産という意味においては必ずしも満足できる方法ではなかった。   In the conventional method, for example, when a polymer film (for example, polypyrrole, polythiophene) is produced on the surface of a large number of plate-like anodes 308, the anode substrate with the polymer film is externally fed after completion of one electrolytic polymerization. It was necessary to remove the terminal and connect the external power feeding terminal to another new flat plate-like anode 308 again. In other words, every time an anode substrate with a polymer film is completed, it is necessary to reconnect the external supply terminal to the plate-like anode 308, and the work is complicated. It was not always a satisfactory method.

また、昨今、機能性デバイスの性能向上要求に伴って、導電性高分子膜などを有する機能性デバイス自体の小型化も要求されている。よって、より面積の小さい基板上に高分子膜(特に、導電性高分子膜)を製造することが必要とされている。
一方、上述した従来の電解重合法においては、そもそも外部給電端子と面積の小さい基板とを接続することが困難であるため、特殊な外部給電端子を製造する必要があり、汎用性に欠ける。
In recent years, with the demand for improving the performance of functional devices, there is a demand for miniaturization of functional devices having conductive polymer films. Therefore, it is necessary to manufacture a polymer film (especially a conductive polymer film) on a substrate having a smaller area.
On the other hand, in the conventional electropolymerization method described above, since it is difficult to connect the external power supply terminal and the substrate having a small area in the first place, it is necessary to manufacture a special external power supply terminal, which lacks versatility.

さらに、機能性デバイスの性能向上のために、高分子膜(特に、導電性高分子膜)の表面の平坦性をより一層高めることが必要とされている。
上述した従来の電解重合法において得られる高分子膜の平坦性では、必ずしも昨今求められるレベルを満たしておらず、更なる向上も求められていた。
Furthermore, in order to improve the performance of the functional device, it is necessary to further improve the flatness of the surface of the polymer film (particularly, the conductive polymer film).
The flatness of the polymer film obtained by the above-described conventional electrolytic polymerization method does not necessarily satisfy the level required recently, and further improvement has been required.

本発明は、上記実情に鑑みて、外部給電端子に接続することなく電解重合法により基板上に平坦性に優れた高分子膜を製造することができる、工業的な生産性に優れた高分子膜の製造方法を提供することを目的とする。
また、本発明は、該製造方法に使用される高分子膜製造用電解重合装置を提供することも目的とする。
In view of the above circumstances, the present invention can produce a polymer film having excellent flatness on a substrate by an electrolytic polymerization method without being connected to an external power supply terminal. It aims at providing the manufacturing method of a film | membrane.
Another object of the present invention is to provide an electropolymerization apparatus for producing a polymer film used in the production method.

本発明者らは、鋭意検討を行ったところ、バイポーラ現象を利用することにより上記課題を解決できることを見出した。
具体的には、本発明者らは、以下に示す手段により上記目的を達成しうることを見出した。
As a result of intensive studies, the present inventors have found that the above problem can be solved by utilizing the bipolar phenomenon.
Specifically, the present inventors have found that the above object can be achieved by the following means.

(1) 電解重合性モノマーと支持電解質とを含む溶液中に浸漬された陰極と陽極との間に、前記陰極または前記陽極と主面が対向するように導電性基板を前記溶液中に浸漬し、前記陰極と前記陽極との間に電圧を印加し、バイポーラ現象を利用して、前記導電性基板表面上に前記電解重合性モノマーの電解重合により高分子膜を製造する、高分子膜の製造方法。 (1) A conductive substrate is immersed in the solution so that the cathode or the anode and the main surface face each other between a cathode and an anode immersed in a solution containing an electropolymerizable monomer and a supporting electrolyte. A polymer film is produced by applying a voltage between the cathode and the anode and utilizing a bipolar phenomenon to produce a polymer film by electrolytic polymerization of the electropolymerizable monomer on the surface of the conductive substrate. Method.

(2) 前記電圧を印加する前に、前記導電性基板と前記陰極との間または前記導電性基板と前記陽極との間に、前記溶液が流通する開口部を有する絶縁性隔壁を配置する、(1)に記載の高分子膜の製造方法。 (2) Before applying the voltage, an insulating partition having an opening through which the solution flows is disposed between the conductive substrate and the cathode or between the conductive substrate and the anode. The manufacturing method of the polymer film as described in (1).

(3) 前記絶縁性隔壁が、前記導電性基板の中心部と対向する位置に開口部を有する、(1)または(2)に記載の高分子膜の製造方法。 (3) The method for producing a polymer film according to (1) or (2), wherein the insulating partition has an opening at a position facing the central portion of the conductive substrate.

(4) 前記溶液中における支持電解質の濃度が、1000mM以下である、(1)〜(3)のいずれかに記載の高分子膜の製造方法。 (4) The method for producing a polymer membrane according to any one of (1) to (3), wherein the concentration of the supporting electrolyte in the solution is 1000 mM or less.

(5) 前記電解重合性モノマーが、ベンゼン、ピロール、アニリン、フェノール、フタロシアニン、チオフェン、フラン、アズレンおよびこれらの誘導体からなる群から選ばれる少なくとも1つを含む、(1)〜(4)のいずれかに記載の高分子膜の製造方法。 (5) Any of (1) to (4), wherein the electropolymerizable monomer includes at least one selected from the group consisting of benzene, pyrrole, aniline, phenol, phthalocyanine, thiophene, furan, azulene and derivatives thereof. A method for producing the polymer film according to claim 1.

(6) 導電性基板と、前記導電性基板の表面上に配置された(1)〜(5)のいずれかに記載の高分子膜の製造方法より得られた高分子膜とを有する高分子膜付き導電性基板。 (6) A polymer having a conductive substrate and a polymer film obtained by the method for producing a polymer film according to any one of (1) to (5) disposed on the surface of the conductive substrate. Conductive substrate with film.

(7) 導電性基板表面上に高分子膜を製造するための高分子膜製造用電解重合装置であって、
電解重合性モノマーと支持電解質とを含む溶液が収容される電解重合槽と、
前記電解重合槽内に配置される陰極および陽極と、
前記電解重合槽内において、前記陰極または前記陽極と主面が対向するように前記陰極と前記陽極との間に配置される導電性基板と、
前記電解重合槽内において、前記導電性基板と前記陰極との間または前記導電性基板と前記陽極との間に配置される、前記溶液が流通する開口部を有する絶縁性隔壁とを有し、
前記陰極と前記陽極との間に電圧を印加し、バイポーラ現象を利用して、前記導電性基板表面上に前記電解重合性モノマーの電解重合により高分子膜を製造する、高分子膜製造用電解重合装置。
(7) An electropolymerization apparatus for producing a polymer film for producing a polymer film on the surface of a conductive substrate,
An electropolymerization tank in which a solution containing an electropolymerizable monomer and a supporting electrolyte is accommodated;
A cathode and an anode disposed in the electrolytic polymerization tank;
In the electrolytic polymerization tank, a conductive substrate disposed between the cathode and the anode so that the cathode or the anode and the main surface face each other,
In the electrolytic polymerization tank, having an insulating partition having an opening through which the solution flows, disposed between the conductive substrate and the cathode or between the conductive substrate and the anode,
Electrolysis for polymer film production in which a voltage is applied between the cathode and the anode, and a polymer film is produced on the surface of the conductive substrate by electropolymerization of the electropolymerizable monomer using a bipolar phenomenon. Polymerization equipment.

(8) 前記絶縁性隔壁が、前記導電性基板の中心部と対向する位置に開口部を有する、(7)に記載の高分子膜製造用電解重合装置。 (8) The electropolymerization apparatus for producing a polymer film according to (7), wherein the insulating partition has an opening at a position facing the central portion of the conductive substrate.

本発明によれば、外部給電端子に接続することなく電解重合法により基板上に平坦性に優れた高分子膜を製造することができる、工業的な生産性に優れた高分子膜の製造方法を提供することができる
また、本発明によれば、該製造方法に使用される高分子膜製造用電解重合装置を提供することができる。
According to the present invention, a polymer film excellent in flatness can be manufactured on a substrate by an electropolymerization method without being connected to an external power supply terminal, and a method for manufacturing a polymer film excellent in industrial productivity Moreover, according to the present invention, it is possible to provide an electrolytic polymerization apparatus for producing a polymer film used in the production method.

本発明の高分子膜製造用電解重合装置の第1の実施形態の概略構成図である。It is a schematic block diagram of 1st Embodiment of the electropolymerization apparatus for polymer film manufacture of this invention. 本発明の高分子膜製造用電解重合装置の第1の実施形態の変形例を示す概略構成図である。It is a schematic block diagram which shows the modification of 1st Embodiment of the electropolymerization apparatus for polymer film manufacture of this invention. 本発明の高分子膜製造用電解重合装置の第2の実施形態の概略構成図である。It is a schematic block diagram of 2nd Embodiment of the electropolymerization apparatus for polymer film manufacture of this invention. 本発明の高分子膜製造用電解重合装置の第3の実施形態の模式的断面図である。It is typical sectional drawing of 3rd Embodiment of the electropolymerization apparatus for polymer film manufacture of this invention. 実施例2および比較例1で得られた高分子膜付き基板の透過率を示す図である。It is a figure which shows the transmittance | permeability of the board | substrate with a polymer film obtained in Example 2 and Comparative Example 1. FIG. (A)白金電極を用いた場合のサイクリックボルタモグラムを示す図である。(B)実施例2で得られた高分子膜付き基板を用いた場合のサイクリックボルタモグラムを示す図である。(A) It is a figure which shows the cyclic voltammogram at the time of using a platinum electrode. (B) It is a figure which shows the cyclic voltammogram at the time of using the board | substrate with a polymer film obtained in Example 2. FIG. 従来法で使用されていた高分子膜製造用電解重合装置の概略構成図である。It is a schematic block diagram of the electropolymerization apparatus for polymer film manufacture used with the conventional method.

以下に、本発明の高分子膜の製造方法、高分子膜付き導電性基板、高分子膜製造用電解重合装置について図面を参照して説明する。
まず、本発明の従来技術と比較した特徴点について詳述する。
本発明の特徴点としては、陰極および陽極間に外部給電端子と接続していない(ワイヤレス)導電性基板を配置し、バイポーラ現象を利用して導電性基板上に高分子膜を製造する点が挙げられる。具体的には、陰極と陽極との間に導電性基板を挟んだ状態で電圧を印加すると、導電性基板の陰極側の表面が陽極として、導電性基板の陽極側の表面が陰極として振る舞う。つまり、導電性基板表面上がバイポーラ現象によって分極され、電解重合に利用できる電極(バイポーラ型電極)となる。そのため、導電性基板の表面では、電解重合性モノマーの重合が進行し、高分子膜が成膜される。電解重合終了後には、新たな導電性基板を代わりに配置すれば、同様に高分子膜を得ることができ、導電性基板自体を外部給電端子と接続する必要がなく、工業的な生産性に優れる。
Below, the manufacturing method of the polymer film of this invention, the electroconductive board | substrate with a polymer film, and the electropolymerization apparatus for polymer film manufacture are demonstrated with reference to drawings.
First, the feature point compared with the prior art of this invention is explained in full detail.
A feature of the present invention is that a (wireless) conductive substrate that is not connected to an external power supply terminal is disposed between the cathode and the anode, and a polymer film is manufactured on the conductive substrate using the bipolar phenomenon. Can be mentioned. Specifically, when a voltage is applied with a conductive substrate sandwiched between a cathode and an anode, the cathode side surface of the conductive substrate behaves as an anode and the anode side surface of the conductive substrate behaves as a cathode. That is, the surface of the conductive substrate is polarized by the bipolar phenomenon, and becomes an electrode (bipolar electrode) that can be used for electrolytic polymerization. Therefore, polymerization of the electropolymerizable monomer proceeds on the surface of the conductive substrate, and a polymer film is formed. After the electropolymerization, if a new conductive substrate is placed instead, a polymer film can be obtained in the same manner, and it is not necessary to connect the conductive substrate itself to the external power supply terminal. Excellent.

また、該方法においては、導電性基板の面積が小さい場合であっても、高分子膜を効率よく成膜することができ、機能性デバイスの小型化の要求にも対応することができる。
また、該方法で得られた高分子膜はその平坦性がより優れる。
さらに、後述するように、陰極と陽極との間に複数枚(2枚以上)の導電性基板を配置することによって、その表面上に同時に高分子膜を成膜することができるため、従来法と比較しても生産性に優れる。
Further, in this method, even when the area of the conductive substrate is small, the polymer film can be efficiently formed, and the demand for downsizing of the functional device can be met.
Moreover, the polymer film obtained by this method is more excellent in flatness.
Furthermore, as will be described later, since a plurality of (two or more) conductive substrates are disposed between the cathode and the anode, a polymer film can be simultaneously formed on the surface thereof. Compared with, it is excellent in productivity.

以下においては、まず、本発明の高分子膜の製造方法に使用される高分子膜製造用電解重合装置について詳述し、その後高分子膜の製造方法について詳述する。   In the following, first, an electropolymerization apparatus for producing a polymer film used in the method for producing a polymer film of the present invention will be described in detail, and then a method for producing the polymer film will be described in detail.

<高分子膜製造用電解重合装置(第1の実施形態)>
まず、以下に、本発明の高分子膜の製造方法に使用される高分子膜製造用電解重合装置の第1の実施形態を図面を参照して説明する。
図1は、本発明の高分子膜製造用電解重合装置10の概略構成図である。
高分子膜製造用電解重合装置10は、導電性基板表面上に高分子膜を製造するために使用され、電解重合槽12と、陰極14と、陽極16と、導電性基板18と、電源20とを備える。
<Electropolymerization apparatus for polymer film production (first embodiment)>
First, a first embodiment of an electropolymerization apparatus for producing a polymer film used in the method for producing a polymer film of the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic configuration diagram of an electropolymerization apparatus 10 for producing a polymer film of the present invention.
The electropolymerization apparatus 10 for producing a polymer film is used for producing a polymer film on the surface of a conductive substrate, and includes an electropolymerization tank 12, a cathode 14, an anode 16, a conductive substrate 18, and a power source 20. With.

電解重合槽12は、電解重合性モノマーと支持電解質とを含む溶液Wを収容(貯留)するための長尺状の槽であり、上面が開放されたものである。該槽12中において電解重合性モノマーの電解重合が進行する。
なお、電解重合槽12の形状および大きさは図1に示した形態に特に制限されず、使用目的に応じて適宜性的な形状および大きさを選択できる。また、上面が開放されていなくてもよい。
The electrolytic polymerization tank 12 is a long tank for storing (reserving) a solution W containing an electrolytic polymerizable monomer and a supporting electrolyte, and has an upper surface opened. Electropolymerization of the electropolymerizable monomer proceeds in the tank 12.
The shape and size of the electrolytic polymerization tank 12 are not particularly limited to the form shown in FIG. 1, and a sexual shape and size can be appropriately selected according to the purpose of use. Moreover, the upper surface does not need to be opened.

陰極14および陽極16は、電解重合槽12内に互いに対向するように配置され、溶液Wに浸漬される。また、陰極14と陽極16は、図示しない外部給電端子を介して後述する電源20と接続しており、電解重合を実施する際に陰極14と陽極16との間に電圧が印加される。
陰極14および陽極16を構成する材料は特に制限されず、金、白金、銅、銀、ステンレス、タリウム、アルミニウム、タングステン、ニオブ、チタン、亜鉛、ニッケルなどの金属、錫、インジウム、チタンなどの金属元素を少なくとも1種含む金属酸化物、またはカーボンなどの導電体によって形成される。なお、金属酸化物の場合、複数の金属が含まれていてもよい(例えば、酸化インジウムスズなど)。
The cathode 14 and the anode 16 are disposed in the electrolytic polymerization tank 12 so as to face each other, and are immersed in the solution W. Moreover, the cathode 14 and the anode 16 are connected to a power source 20 described later via an external power supply terminal (not shown), and a voltage is applied between the cathode 14 and the anode 16 when performing electropolymerization.
The material constituting the cathode 14 and the anode 16 is not particularly limited, and is a metal such as gold, platinum, copper, silver, stainless steel, thallium, aluminum, tungsten, niobium, titanium, zinc, nickel, or a metal such as tin, indium, or titanium. It is formed of a metal oxide containing at least one element or a conductor such as carbon. In the case of a metal oxide, a plurality of metals may be included (for example, indium tin oxide).

陰極14および陽極16の形状は、平板状である。なお、陰極14および陽極16の形状は、図1の形態に限定されず、平板状以外の形状(棒状など)であってもよい。
また、図1に示すように、陰極14と陽極16とが互いに平板状の場合、得られる高分子膜の膜厚のバラツキがより小さくなる点から、両者は略平行に配置されることが好ましい。
The shape of the cathode 14 and the anode 16 is a flat plate shape. In addition, the shape of the cathode 14 and the anode 16 is not limited to the form of FIG. 1, A shape (bar shape etc.) other than flat form may be sufficient.
In addition, as shown in FIG. 1, when the cathode 14 and the anode 16 are flat each other, it is preferable that both are arranged substantially in parallel from the viewpoint that the variation in film thickness of the obtained polymer film becomes smaller. .

導電性基板18は、電解重合槽12内において、陰極14と陽極16との間にその主面が陰極14または陽極16と対向するように配置され、溶液Wに浸漬される。導電性基板18は、得られる高分子膜の膜厚のバラツキがより小さくなる点から、図1に示すように、陰極14または陽極16に対して略平行になるように配置されることが好ましい。
なお、導電性基板18は、平板状で第1の主面と第2の主面とを有するが、該主面(第1の主面と第2の主面)が陽極14または陽極16と対向するように配置される。
The electroconductive substrate 18 is disposed in the electrolytic polymerization tank 12 between the cathode 14 and the anode 16 such that its main surface faces the cathode 14 or the anode 16, and is immersed in the solution W. The conductive substrate 18 is preferably arranged so as to be substantially parallel to the cathode 14 or the anode 16 as shown in FIG. 1 from the viewpoint that the variation in film thickness of the obtained polymer film becomes smaller. .
The conductive substrate 18 is flat and has a first main surface and a second main surface, and the main surfaces (the first main surface and the second main surface) are the anode 14 or the anode 16. It arrange | positions so that it may oppose.

導電性基板18を構成する材料は、導電性を示す材料であれば特に制限されない。例えば、金、白金、銅、銀、ステンレス、タリウム、アルミニウム、タングステン、ニオブ、チタン、亜鉛、ニッケルなどの金属、錫、インジウム、チタンなどの金属元素を少なくとも1種含む金属酸化物、またはカーボンなどの導電体が挙げられる。なお、金属酸化物の場合、複数の金属が含まれていてもよい(例えば、酸化インジウムスズなど)。
なお、導電性基板18はその表面が導電性を示せばその構成は限定されず、例えば、絶縁性基板(例えば、ガラス基板)表面上を導電性材料(例えば、ITO)で覆った構成であってもよい。
The material which comprises the electroconductive board | substrate 18 will not be restrict | limited especially if it is a material which shows electroconductivity. For example, metal such as gold, platinum, copper, silver, stainless steel, thallium, aluminum, tungsten, niobium, titanium, zinc, nickel, metal oxide containing at least one metal element such as tin, indium, titanium, or carbon These conductors are mentioned. In the case of a metal oxide, a plurality of metals may be included (for example, indium tin oxide).
The configuration of the conductive substrate 18 is not limited as long as the surface exhibits conductivity. For example, the conductive substrate 18 has a configuration in which the surface of an insulating substrate (for example, a glass substrate) is covered with a conductive material (for example, ITO). May be.

図1において、導電性基板18の形状は平板状である。
なお、導電性基板18の形状は図1の形態に限定されず、平板状以外の形状であってもよく、湾曲した面を有する基板であってもよい。
また、導電性基板18の大きさは図1の形態に示すように、陰極14および陽極16と同程度の大きさであることが好ましい。該形態であれば、導電性基板18上での高分子膜の被覆率がより向上するため、好ましい。
In FIG. 1, the shape of the conductive substrate 18 is a flat plate shape.
The shape of the conductive substrate 18 is not limited to the shape shown in FIG. 1, and may be a shape other than a flat plate shape or a substrate having a curved surface.
The size of the conductive substrate 18 is preferably the same size as the cathode 14 and the anode 16 as shown in FIG. If it is this form, since the coverage of the polymer film on the electroconductive board | substrate 18 improves more, it is preferable.

導電性基板18は、図1において1枚のみ陰極14と陽極16との間に配置されているが、配置される枚数は2枚以上であってもよい。例えば、図2に示すように、2枚の導電性基板18aおよび18bが配置される場合、導電性基板18aおよび18bの陰極14側の表面が陽極として、導電性基板18aおよび18bの陽極16側の表面が陰極として振る舞い、両者がバイポーラ型電極として作用する。従って、後述する電解重合を実施した場合、導電性基板18aおよび18bの両者の表面上に同時に高分子膜を成膜することができる。   Although only one conductive substrate 18 is disposed between the cathode 14 and the anode 16 in FIG. 1, two or more conductive substrates 18 may be disposed. For example, as shown in FIG. 2, when two conductive substrates 18a and 18b are arranged, the surface on the cathode 14 side of the conductive substrates 18a and 18b serves as the anode, and the anode 16 side of the conductive substrates 18a and 18b. The surface of the substrate acts as a cathode, and both act as bipolar electrodes. Therefore, when the electropolymerization described later is performed, a polymer film can be simultaneously formed on the surfaces of both the conductive substrates 18a and 18b.

電源20は、上述した陰極14および陽極16と配線および図示しない外部給電端子を介して接続する。
なお、図1においては、陰極14、陽極16、および導電性基板18の一部が溶液Wに浸漬しているが、それぞれの全体が溶液Wに浸漬していてもよい。
The power source 20 is connected to the above-described cathode 14 and anode 16 via wiring and an external power supply terminal (not shown).
In FIG. 1, the cathode 14, the anode 16, and a part of the conductive substrate 18 are immersed in the solution W, but each of them may be immersed in the solution W.

<高分子膜の製造方法(第1の実施形態)>
次に、上記高分子膜製造用電解重合装置10を使用した、高分子膜の製造方法について詳述する。
高分子膜の製造方法としては、まず、溶液W中に浸漬された陰極14と陽極16との間に、陰極14または陽極16と主面が対向するように導電性基板18を溶液W中に浸漬する。次に、陰極14と陽極16との間に電圧を印加し、バイポーラ現象を利用して導電性基板18表面上に電解重合性モノマーの電解重合により高分子膜を製造する。
以下では、まず、上記製造方法で使用される材料(例えば、電解重合性モノマー、支持電解質など)について詳述し、その後該方法の詳細な手順について詳述する。
<Method for Producing Polymer Film (First Embodiment)>
Next, a method for producing a polymer film using the electrolytic polymerization apparatus 10 for producing the polymer film will be described in detail.
As a method for producing the polymer film, first, the conductive substrate 18 is placed in the solution W between the cathode 14 and the anode 16 immersed in the solution W so that the cathode 14 or the anode 16 faces the main surface. Immerse. Next, a voltage is applied between the cathode 14 and the anode 16 to produce a polymer film on the surface of the conductive substrate 18 by electrolytic polymerization of an electropolymerizable monomer using a bipolar phenomenon.
Below, the material (for example, an electropolymerizable monomer, a supporting electrolyte etc.) used with the said manufacturing method is explained in full detail first, and the detailed procedure of this method is explained in full detail after that.

(電解重合性モノマー)
使用される電解重合性モノマーは、電圧を印加することにより電解重合し得るモノマーであれば特にその種類は制限されない。
例えば、陰極還元重合の際に使用されるモノマーとして、例えば、ビニルピリジン、アクリル酸、メタクリル酸、アクリル酸エステル、メタクリル酸エステル、アクリロニトリル、スチレン、クロトン酸、アセトニトリルなどのビニル系モノマー若しくはこれらの誘導体、または、芳香族環(例えば、ベンゼン、チオフェン、ピロール)に2つのハロゲン原子が結合した化合物(ジハロ芳香族化合物)や、ベンジルブロミドなどのジハロゲン化合物が挙げられる。
また、陽極酸化重合の際に使用されるモノマーとしては、例えば、ベンゼン、ピロール、アニリン、フェノール、フタロシアニン、チオフェン、フラン、アズレン、またはこれらの誘導体が挙げられる。より具体的には、アニリン、アルキルアニリン類、アルコキシアニリン類、ハロアニリン類、o−フェニレンジアミン類、2,6−ジアルキルアニリン類、2,5−ジアルコキシアニリン類、4,4’−ジアミノジフェニルエーテルなどのアニリンおよびアニリン誘導体;ピロール、3−メチルピロール、3−エチルピロール、3−プロピルピロールなどのピロールおよびピロール誘導体;チオフェン、3−メチルチオフェン、3−エチルチオフェン、3,4−エチレンジオキシチオフェンなどのチオフェンおよびチオフェン誘導体などが挙げられる。
(Electropolymerizable monomer)
The type of the electropolymerizable monomer to be used is not particularly limited as long as it is a monomer that can be electropolymerized by applying a voltage.
For example, as a monomer used in cathodic reduction polymerization, for example, vinyl monomers such as vinyl pyridine, acrylic acid, methacrylic acid, acrylic ester, methacrylic ester, acrylonitrile, styrene, crotonic acid, acetonitrile, or derivatives thereof Or a compound in which two halogen atoms are bonded to an aromatic ring (eg, benzene, thiophene, pyrrole) (dihaloaromatic compound), or a dihalogen compound such as benzyl bromide.
Examples of the monomer used in the anodic oxidation polymerization include benzene, pyrrole, aniline, phenol, phthalocyanine, thiophene, furan, azulene, and derivatives thereof. More specifically, aniline, alkylanilines, alkoxyanilines, haloanilines, o-phenylenediamines, 2,6-dialkylanilines, 2,5-dialkoxyanilines, 4,4′-diaminodiphenyl ether, etc. Aniline and aniline derivatives of pyrrole; pyrrole and pyrrole derivatives such as pyrrole, 3-methylpyrrole, 3-ethylpyrrole, 3-propylpyrrole; thiophene, 3-methylthiophene, 3-ethylthiophene, 3,4-ethylenedioxythiophene, etc. And thiophene and thiophene derivatives thereof.

溶液W中における電解重合性モノマーの含有量は特に制限されないが、高分子膜の成膜がより効率的に進行し、その平坦性がより優れる点から、0.1〜1000mMが好ましく、1〜100mMがより好ましい。   The content of the electropolymerizable monomer in the solution W is not particularly limited, but is preferably 0.1 to 1000 mM from the viewpoint that the film formation of the polymer film proceeds more efficiently and the flatness thereof is more excellent. 100 mM is more preferable.

(支持電解質)
溶液W中には、支持電解質が含まれる。支持電解質が含まれることにより、効率的に高分子膜の成膜が進行する。
支持電解質としては、イオン電離可能な物質で、溶媒によく溶けて陽イオン・陰イオンに解離し、イオン伝導性を与え、酸化・還元を受けにくく、広い電位範囲で安定する支持電解質が望ましい。
支持電解質としては公知の支持電解質を使用することができ、例えば、一般式MX、R4NXで表される化合物(ただし、M=アルカリ金属イオン、アルカリ土類金属イオン、遷移金属イオン、ピリジニウムイオン、イミダゾリウムイオン、四級ホスホニウムイオンなど、X=A-(Aはハロゲン)、N(CF3SO22-、BF4-、PF6-、CF3SO3 -、CF3CO2 -、NO3 -、SCN-、ClO4 -、炭酸イオン、安息香酸アニオン、アルキルナフタレンスルホン酸イオン、または、ピクリン酸アニオンなど、R4N:テトラアルキルアンモニウム塩(R;CH3、C25、C37、C49など))が挙げられる。
より具体的には、ブチルナフタレンスルホン酸ナトリウムなどが挙げられる。
(Supporting electrolyte)
The solution W contains a supporting electrolyte. By including the supporting electrolyte, the film formation of the polymer film proceeds efficiently.
As the supporting electrolyte, a supporting electrolyte which is a substance capable of ionization, dissolves well in a solvent and dissociates into a cation and an anion, imparts ionic conductivity, hardly undergoes oxidation / reduction, and is stable in a wide potential range is desirable.
As the supporting electrolyte, a known supporting electrolyte can be used. For example, a compound represented by the general formula MX, R 4 NX (where M = alkali metal ion, alkaline earth metal ion, transition metal ion, pyridinium ion) , Imidazolium ion, quaternary phosphonium ion, etc., X = A (A is halogen), N (CF 3 SO 2 ) 2− , BF 4− , PF 6− , CF 3 SO 3 , CF 3 CO 2 , NO 3 , SCN , ClO 4 , carbonate ion, benzoate anion, alkylnaphthalene sulfonate ion, or picrate anion, R 4 N: tetraalkylammonium salt (R; CH 3 , C 2 H 5 , C 3 H 7 , C 4 H 9 and the like)).
More specifically, butyl naphthalene sulfonate sodium etc. are mentioned.

溶液W中における支持電解質の含有量は特に制限されないが、高分子膜の成膜がより効率的に進行し、その平坦性がより優れる点から、1000mM以下が好ましく、0.1〜100mMがより好ましく、1〜50mMがさらに好ましい。   The content of the supporting electrolyte in the solution W is not particularly limited, but is preferably 1000 mM or less, more preferably 0.1 to 100 mM from the viewpoint that the film formation of the polymer film proceeds more efficiently and the flatness thereof is more excellent. Preferably, 1-50 mM is more preferable.

(その他の成分)
溶液Wは溶媒を含んでいてもよく、その種類は特に制限されないが、例えば、水または有機溶媒(例えば、アセトニトリル、ニトロベンゼン、ヘキサン、トルエン、ジエチルエーテル、ベンゼンなど)が挙げられる。
(Other ingredients)
The solution W may contain a solvent, and the kind thereof is not particularly limited, and examples thereof include water or an organic solvent (for example, acetonitrile, nitrobenzene, hexane, toluene, diethyl ether, benzene, etc.).

(電解重合の条件)
本発明で実施される電解重合としては、陽極酸化重合または陰極還元重合のいずれも実施することができ、使用される電解重合性モノマーに応じて適宜最適な方法が選択される。
(Conditions for electrolytic polymerization)
As the electrolytic polymerization carried out in the present invention, either anodic oxidation polymerization or cathodic reduction polymerization can be carried out, and an optimum method is appropriately selected according to the electrolytic polymerizable monomer to be used.

電解重合は、公知の電解重合法を用いることが可能であり、定電流法、定電圧法、電位走査法のいずれを用いてもよい。定電流法では、導電性基板18に析出する高分子膜(特に、導電性高分子膜)の膜厚を通電時間によって制御することが可能であるため、好ましい。   For the electropolymerization, a known electropolymerization method can be used, and any of a constant current method, a constant voltage method, and a potential scanning method may be used. The constant current method is preferable because the film thickness of the polymer film (particularly the conductive polymer film) deposited on the conductive substrate 18 can be controlled by the energization time.

電解重合条件は特に制限されないが、例えば、定電流法を用いる場合、得られる高分子膜の平坦性がより優れる点で、電流密度は0.01〜50mA/cm2の範囲が好ましく、0.1〜10mA/cm2の範囲がより好ましい。
また、電位走査法においては、電位幅を媒体および電解質の分解しない範囲内で行う必要があるため、媒体や支持電解質の種類に応じて電位範囲が設定される。通常、電位範囲は−2〜2Vvs.飽和カロメル電極(SCE)の範囲で重合可能であり、−0.5〜1.2Vvs.飽和カロメル電極(SCE)の範囲がより好ましい。
The electropolymerization conditions are not particularly limited. For example, when the constant current method is used, the current density is preferably in the range of 0.01 to 50 mA / cm 2 in that the obtained polymer film has more excellent flatness. The range of 1-10 mA / cm < 2 > is more preferable.
In the potential scanning method, the potential range needs to be within a range in which the medium and the electrolyte are not decomposed. Therefore, the potential range is set according to the type of the medium and the supporting electrolyte. Usually, the potential range is -2 to 2 Vvs. Polymerization is possible in the range of saturated calomel electrode (SCE), -0.5 to 1.2 Vvs. The range of saturated calomel electrode (SCE) is more preferred.

電解重合の時間(電解時間)および電解重合時の溶液Wの温度は特に制限されず、所望の厚みの高分子膜が得られるように適宜選択される。   The time for electrolytic polymerization (electrolytic time) and the temperature of the solution W at the time of electrolytic polymerization are not particularly limited, and are appropriately selected so that a polymer film having a desired thickness can be obtained.

なお、必要に応じて、電解重合槽12から溶液Wを排出しつつ、新たな溶液Wを供給しながら、電解重合を行ってもよい。電解重合の際には、反応の副産物が発生し、溶液W中に浮遊することがある。そのため、連続的に電解重合を行う場合、これらの副産物によって製造される高分子膜の性状が影響を受け、平坦性などが損なわれるおそれもある。そこで、新たな溶液Wを連続的に電解重合槽12に供給して、溶液Wを連続的に置き換えることによって、高分子膜の性状劣化を抑制することができる。   If necessary, the electrolytic polymerization may be performed while discharging the solution W from the electrolytic polymerization tank 12 and supplying a new solution W. During the electropolymerization, reaction by-products are generated and may float in the solution W. Therefore, when performing electrolytic polymerization continuously, the properties of the polymer film produced by these byproducts are affected, and flatness and the like may be impaired. Accordingly, by continuously supplying new solution W to the electrolytic polymerization tank 12 and continuously replacing the solution W, it is possible to suppress deterioration of the properties of the polymer film.

溶液Wの供給方法は特に制限されず、図示しない注入管を介して電解重合槽12に溶液Wを供給してもよい。なお、陽極酸化重合を実施する際には、電解重合槽12中の溶液Wが陰極14から導電性基板18の方向に流れるように、溶液Wを供給することが好ましい。該形態であれば、新たな溶液Wが導電性基板18の重合が進行する表面上に連続的に供給され、結果として高分子膜がより効率的に形成される。
また、電解重合槽12からの溶液Wの排出方法は特に制限されず、図示しない電解重合槽12の底部に配置された排出口から溶液Wを排出してもよいし、溶液Wを電解重合槽12からオーバーフローさせて排出してもよい。
The method for supplying the solution W is not particularly limited, and the solution W may be supplied to the electrolytic polymerization tank 12 via an injection pipe (not shown). In addition, when performing anodic oxidation polymerization, it is preferable to supply the solution W so that the solution W in the electrolytic polymerization tank 12 flows from the cathode 14 toward the conductive substrate 18. If it is this form, the new solution W will be continuously supplied on the surface where superposition | polymerization of the electroconductive board | substrate 18 advances, and a polymer film will be formed more efficiently as a result.
The method for discharging the solution W from the electrolytic polymerization tank 12 is not particularly limited, and the solution W may be discharged from a discharge port arranged at the bottom of the electrolytic polymerization tank 12 (not shown). 12 may be discharged after overflowing.

(高分子膜)
上述した手順によって平坦性に優れた高分子膜が導電性基板18上に得られる。
高分子膜の膜厚は電解重合の条件を変更することにより適宜調整されるが、平坦性がより優れる点で、10nm〜100μmが好ましく、10nm〜500nmがより好ましい。
(Polymer film)
A polymer film excellent in flatness is obtained on the conductive substrate 18 by the above-described procedure.
The film thickness of the polymer film is appropriately adjusted by changing the conditions for electrolytic polymerization, but is preferably 10 nm to 100 μm and more preferably 10 nm to 500 nm in terms of more excellent flatness.

なお、電解重合性モノマーとしてベンゼン、ピロール、アニリン、フェノール、フタロシアニン、チオフェン、フラン、アズレン、またはこれらの誘導体を使用することにより、導電性に優れた高分子膜(導電性高分子膜)を得ることができる。   In addition, by using benzene, pyrrole, aniline, phenol, phthalocyanine, thiophene, furan, azulene, or a derivative thereof as an electropolymerizable monomer, a polymer film (conductive polymer film) having excellent conductivity is obtained. be able to.

該高分子膜(特に、導電性高分子膜)を有する導電性基板18は、種々の用途に使用することができる。例えば、色素増感太陽電池の部材として使用することができる。   The conductive substrate 18 having the polymer film (particularly a conductive polymer film) can be used for various applications. For example, it can be used as a member of a dye-sensitized solar cell.

<高分子膜製造用電解重合装置(第2の実施形態)>
以下に、本発明の高分子膜製造用電解重合装置の第2の実施形態を図面を参照して説明する。
図3は、本発明の高分子膜製造用電解重合装置100の概略構成図である。
高分子膜製造用電解重合装置100は、電解重合槽12と、陰極14と、陽極16と、導電性基板18と、電源20と、絶縁性隔壁22とを備える。
図3に示す高分子膜製造用電解重合装置100は、陽極酸化重合の際に使用される電解重合装置であって、絶縁性隔壁22を備える点を除いて、図1に示す高分子膜製造用電解重合装置10と同様の構成を有するものであるので、同一の構成要素には同一の参照符号を付し、その説明を省略し、主として絶縁性隔壁22について説明する。
<Electropolymerization apparatus for polymer film production (second embodiment)>
Below, 2nd Embodiment of the electropolymerization apparatus for polymer film manufacture of this invention is described with reference to drawings.
FIG. 3 is a schematic configuration diagram of an electropolymerization apparatus 100 for producing a polymer film of the present invention.
The polymer film production electrolytic polymerization apparatus 100 includes an electrolytic polymerization tank 12, a cathode 14, an anode 16, a conductive substrate 18, a power source 20, and an insulating partition wall 22.
An electropolymerization apparatus 100 for producing a polymer film shown in FIG. 3 is an electropolymerization apparatus used for anodizing polymerization, and the polymer film production shown in FIG. Therefore, the same constituent elements are denoted by the same reference numerals, the description thereof is omitted, and the insulating partition 22 will be mainly described.

絶縁性隔壁22は、導電性基板18と陽極16との間に配置され、その中央に溶液Wが流通する開口部24を有する。該絶縁性隔壁22は、陰極14と陽極16との間を仕切るように電解重合槽12内に配置される。
絶縁性隔壁22がない場合(高分子膜製造用電解重合装置10の場合)、電解重合を行うと導電性基板18の陰極14側の表面には高分子膜が形成されるものの、導電性基板18の陰極14側の表面の周縁領域(エッジ領域)においては高分子膜が被覆されない領域が発生する場合がある。これは、導電性基板18の周りに存在する溶液中を流れる電流が規制されないため、導電性基板18の陰極14側表面全体の陽分極が不十分となり、導電性基板18の陰極14側表面の周縁領域に十分なラジカルカチオンが発生せずに、重合反応が十分に進行しないためである。
それに対して、絶縁性隔壁22を設けることにより、導電性基板18の周りの電流の流れを規制することができ、導電性基板18の陰極14側表面の周縁領域においても十分な量のラジカルカチオンが発生し、結果として導電性基板18上での高分子膜の被覆率が向上すると共に、高分子膜の膜厚のバラツキもより抑制される。
The insulating partition wall 22 is disposed between the conductive substrate 18 and the anode 16 and has an opening 24 through which the solution W flows in the center. The insulating partition wall 22 is disposed in the electrolytic polymerization tank 12 so as to partition the cathode 14 and the anode 16.
When there is no insulating partition wall 22 (in the case of the electropolymerization apparatus 10 for producing a polymer film), a polymer film is formed on the surface of the conductive substrate 18 on the cathode 14 side when electrolytic polymerization is performed. In the peripheral region (edge region) of the surface on the cathode 14 side of 18, a region not covered with the polymer film may occur. This is because the current flowing in the solution existing around the conductive substrate 18 is not regulated, so that the anodic polarization of the entire surface of the conductive substrate 18 on the cathode 14 side is insufficient, and the surface of the conductive substrate 18 on the cathode 14 side is insufficient. This is because sufficient radical cations are not generated in the peripheral region and the polymerization reaction does not proceed sufficiently.
On the other hand, by providing the insulating partition wall 22, the current flow around the conductive substrate 18 can be regulated, and a sufficient amount of radical cations can be obtained in the peripheral region on the cathode 14 side surface of the conductive substrate 18. As a result, the coverage of the polymer film on the conductive substrate 18 is improved, and variations in the film thickness of the polymer film are further suppressed.

絶縁性隔壁22は、導電性基板18の中心部と対向する位置に、溶液Wが流通する開口部24を有する。より具体的には、図3においては、絶縁性隔壁22の中央に開口部24を有する。該位置に開口部24を有することにより、導電性基板18の陰極14側の表面の周縁領域への陽極16からの影響をより抑制することでき、結果として導電性基板18上での高分子膜の被覆率をより向上させることができる。   The insulating partition wall 22 has an opening 24 through which the solution W flows at a position facing the central portion of the conductive substrate 18. More specifically, in FIG. 3, an opening 24 is provided at the center of the insulating partition wall 22. By having the opening 24 at this position, the influence of the anode 16 on the peripheral region of the surface on the cathode 14 side of the conductive substrate 18 can be further suppressed, and as a result, the polymer film on the conductive substrate 18 is obtained. The coverage of can be further improved.

なお、開口部24の位置は、導電性基板18の中心部に対向する位置以外の位置であってもよい。
また、開口部24の大きさは特に制限されず、使用される導電性基板18の大きさなどに応じて適宜最適な大きさが選択される。高分子膜の成膜をより効率的に行う点からは、開口部24の面積Aと絶縁性隔壁22の面積Bとの比(A/B)は、0.005〜1が好ましく、0.01〜0.1がより好ましい。
また、開口部24の形状は、図3においては長尺状であるが、その形状は特に制限されず円形状、楕円状、無定形であってもよい。
さらに、開口部24の数は、図3においては1つであるが、その数は特に制限されず、複数個の開口部24が設けられていてもよい。
Note that the position of the opening 24 may be a position other than the position facing the center of the conductive substrate 18.
Further, the size of the opening 24 is not particularly limited, and an optimal size is appropriately selected according to the size of the conductive substrate 18 to be used. From the viewpoint of more efficiently forming the polymer film, the ratio (A / B) of the area A of the opening 24 to the area B of the insulating partition wall 22 is preferably 0.005 to 1. 01-0.1 is more preferable.
Further, the shape of the opening 24 is long in FIG. 3, but the shape is not particularly limited, and may be circular, elliptical, or amorphous.
Furthermore, although the number of the openings 24 is one in FIG. 3, the number is not particularly limited, and a plurality of openings 24 may be provided.

絶縁性隔壁22を構成する材料は特に制限されず、絶縁性を示す材料であれば特に制限されない。例えば、高分子(例えば、ポリエチレン、ポリプロピレン)、ガラスなどが挙げられる。   The material which comprises the insulating partition 22 is not restrict | limited in particular, If it is the material which shows insulation, it will not restrict | limit in particular. For example, polymer (for example, polyethylene, polypropylene), glass, etc. are mentioned.

高分子膜製造用電解重合装置100を使用した電解重合の条件は、上述した高分子膜製造用電解重合装置10を使用した電解重合の条件と同じである。なお、陰極14と陽極16との間に電圧を印加する前に、上述した絶縁性隔壁22を配置する。
該形態によって得られる高分子膜は、導電性基板18表面上での被覆率により優れ、膜厚のバラツキがより小さい。より具体的には、高分子膜の導電性基板18表面上での被覆率としては、90%以上が好ましく、95%以上がより好ましい。最も好ましくは100%である。
The conditions for the electropolymerization using the electropolymerization apparatus 100 for polymer film production are the same as the conditions for the electropolymerization using the electropolymerization apparatus 10 for polymer film production described above. In addition, before applying a voltage between the cathode 14 and the anode 16, the insulating partition 22 mentioned above is arrange | positioned.
The polymer film obtained by this form is more excellent in the coverage on the surface of the conductive substrate 18, and the variation in film thickness is smaller. More specifically, the coverage of the polymer film on the surface of the conductive substrate 18 is preferably 90% or more, and more preferably 95% or more. Most preferably, it is 100%.

なお、図3においては、陽極酸化重合の際に使用される形態として、高分子膜製造用電解重合装置100を例示した。一方、陰極電解重合の際には、絶縁性隔壁22が陽極16と導電性基板18との間ではなく、陰極14と導電性基板18との間に配置されることが好ましい。該形態であれば、導電性基板18の陽極16側の表面上に高い被覆率を示す高分子膜を効率よく形成することができる。   In addition, in FIG. 3, the electropolymerization apparatus 100 for polymer film manufacture was illustrated as a form used in the case of anodic oxidation polymerization. On the other hand, in the case of cathodic electropolymerization, it is preferable that the insulating partition wall 22 is disposed not between the anode 16 and the conductive substrate 18 but between the cathode 14 and the conductive substrate 18. If it is this form, the polymer film which shows a high coverage on the surface by the side of the anode 16 of the electroconductive board | substrate 18 can be formed efficiently.

<高分子膜製造用電解重合装置(第3の実施形態)>
以下に、本発明の高分子膜製造用電解重合装置の第3の実施形態を図面を参照して説明する。
図4は、本発明の高分子膜製造用電解重合装置200の模式的断面図である。
高分子膜製造用電解重合装置200は、電解重合槽12と、陰極14と、陽極16と、帯状導電性基板26と、ローラ28とを備える。なお、陰極14および陽極16は、図示しない電源と外部給電端子および配線を介して接続している。
図4に示す高分子膜製造用電解重合装置200は、帯状導電性基板26を電解重合する際に使用される電解重合装置であって、帯状導電性基板26およびローラ28を備える点を除いて、図1に示す高分子膜製造用電解重合装置10と同様の構成を有するものであるので、同一の構成要素には同一の参照符号を付し、その説明を省略する。
<Electropolymerization apparatus for polymer film production (third embodiment)>
Below, 3rd Embodiment of the electropolymerization apparatus for polymer film manufacture of this invention is described with reference to drawings.
FIG. 4 is a schematic cross-sectional view of an electropolymerization apparatus 200 for producing a polymer film of the present invention.
The polymer film production electrolytic polymerization apparatus 200 includes an electrolytic polymerization tank 12, a cathode 14, an anode 16, a strip-like conductive substrate 26, and a roller 28. The cathode 14 and the anode 16 are connected to a power source (not shown) through an external power supply terminal and wiring.
An electropolymerization apparatus 200 for producing a polymer film shown in FIG. 4 is an electropolymerization apparatus used for electrolytic polymerization of the strip-shaped conductive substrate 26 except that the strip-shaped conductive substrate 26 and a roller 28 are provided. 1 has the same configuration as that of the electropolymerization apparatus 10 for producing a polymer film shown in FIG. 1, and therefore, the same components are denoted by the same reference numerals and the description thereof is omitted.

高分子膜製造用電解重合装置200は、帯状導電性基板26に対して連続的に電解重合を実施する装置である。具体的には、図示しない導電性基板供給部から連続して供給される帯状導電性基板26は、電解重合槽12中の溶液Wに浸漬し、ローラ28を介して連続的に陰極14と陽極16との間に供給される。陰極14と陽極16との間を通過する間に、帯状導電性基板26の表面上に高分子膜が成膜される。該形態であれば、連続的に高分子膜を製造することができ、工業的生産性により優れる。   The polymer film production electrolytic polymerization apparatus 200 is an apparatus that continuously performs electrolytic polymerization on the strip-shaped conductive substrate 26. Specifically, the strip-shaped conductive substrate 26 continuously supplied from a conductive substrate supply unit (not shown) is immersed in the solution W in the electrolytic polymerization tank 12 and is continuously connected to the cathode 14 and the anode via the roller 28. 16 is supplied. While passing between the cathode 14 and the anode 16, a polymer film is formed on the surface of the strip-like conductive substrate 26. If it is this form, a polymer film can be manufactured continuously and it is more excellent in industrial productivity.

なお、高分子膜製造用電解装置200には、必要に応じて、陽極14と帯状導電性基板26との間、または、陽極16と帯状導電性基板26との間に、上述した溶液Wが流通する開口部を有する絶縁性隔壁を配置してもよい。該絶縁性隔壁を配置することにより、帯状導電性基板26上での高分子膜の被覆率がより向上する。   In the electrolytic apparatus 200 for polymer film production, the solution W described above is provided between the anode 14 and the strip-shaped conductive substrate 26 or between the anode 16 and the strip-shaped conductive substrate 26 as necessary. You may arrange | position the insulating partition which has the opening part which distribute | circulates. By disposing the insulating partition, the coverage of the polymer film on the strip-like conductive substrate 26 is further improved.

以下、実施例により、本発明について更に詳細に説明するが、本発明はこれらに限定されるものではない。   EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to these.

(実施例1)
(高分子膜製造用電解装置)
まず、図1に示す高分子膜製造用電解装置10を作製した。陰極14、陽極16としては、ステンレス基板(縦:10mm、横:10mm)を使用した。また、導電性基板18としては、ITOで表面が被覆されたガラス基板(縦:10mm、横:10mm)を使用した。
なお、電解重合槽12の幅は20mmであり、長さは35mmであった。また、陰極14と導電性基板18との間の距離は16mmであった。また、陽極16と導電性基板18との間の距離は16mmであった。
また、図1に示すように、陰極14、陽極16、および導電性基板18は、それぞれ略平行になるように配置された。
Example 1
(Electrolyzer for polymer membrane production)
First, an electrolytic apparatus 10 for producing a polymer film shown in FIG. 1 was produced. As the cathode 14 and the anode 16, a stainless steel substrate (length: 10 mm, width: 10 mm) was used. As the conductive substrate 18, a glass substrate (vertical: 10 mm, horizontal: 10 mm) whose surface was coated with ITO was used.
In addition, the width | variety of the electrolytic polymerization tank 12 was 20 mm, and length was 35 mm. Further, the distance between the cathode 14 and the conductive substrate 18 was 16 mm. The distance between the anode 16 and the conductive substrate 18 was 16 mm.
Further, as shown in FIG. 1, the cathode 14, the anode 16, and the conductive substrate 18 were arranged so as to be substantially parallel to each other.

(電解重合)
溶液Wとして、ブチルナフタレンスルホン酸ナトリウム(10mM)および3,4−エチレンジオキシチオフェン(EDOT)(20mM)を含む水溶液を調製した。
次に、電解重合槽12中に該溶液Wを供給して、4mA/cm2定電流電解重合(電解時間20秒)を行い、導電性基板18の陰極14側の表面に膜厚30nmの高分子膜(ポリ(3,4−エチレンジオキシチオフェン)(PEDOT)膜)を製造した。
(Electrolytic polymerization)
As solution W, an aqueous solution containing sodium butylnaphthalenesulfonate (10 mM) and 3,4-ethylenedioxythiophene (EDOT) (20 mM) was prepared.
Next, the solution W is supplied into the electrolytic polymerization tank 12 to perform 4 mA / cm 2 constant current electrolytic polymerization (electrolysis time 20 seconds), and a high thickness of 30 nm is formed on the surface of the conductive substrate 18 on the cathode 14 side. A molecular film (poly (3,4-ethylenedioxythiophene) (PEDOT) film) was produced.

(各種評価)
ナノスケールハイブリッド顕微鏡(キーエンス VN−8000)を用いて、得られた高分子膜の二乗平均粗さ(RMS)を測定したところ、後述する実施例2と同程度の数値が得られた。
また、導電性基板18表面上(片面上)における高分子膜の被覆率を測定したところ、87%であった。なお、被覆率は、得られた導電性基板18の表面上を顕微鏡観察して、導電性基板18の溶液Wに浸漬した部分の片面の面積から算定した。
(Various evaluations)
When the root mean square roughness (RMS) of the obtained polymer film was measured using a nanoscale hybrid microscope (Keyence VN-8000), the same numerical value as in Example 2 described later was obtained.
Moreover, when the coverage of the polymer film on the surface (one side) of the conductive substrate 18 was measured, it was 87%. The coverage was calculated from the area of one side of the portion of the conductive substrate 18 immersed in the solution W by observing the surface of the conductive substrate 18 with a microscope.

(実施例2)
(高分子膜製造用電解装置)
まず、図3に示す高分子膜製造用電解装置100を作製した。陰極14、陽極16としては、ステンレス基板(縦:10mm、横:10mm)を使用した。また、導電性基板18としては、ITOで表面が被覆されたガラス基板(縦:10mm、横:10mm)を使用した。さらに、絶縁性隔壁22としては、ポリプロピレン基板を使用した。絶縁性隔壁22の中央部には幅2mmの長方形状の開口部24がある。
なお、電解重合槽12の幅は20mmであり、長さは35mmであった。また、陰極14と導電性基板18との間の距離は15mmであり、陰極14と絶縁性隔壁22との間の距離は16mmであった。また、陽極16と絶縁性隔壁22との間の距離は16mmであった。
また、図1に示すように、陰極14、陽極16、導電性基板18、および絶縁性隔壁22は、それぞれ略平行になるように配置された。
(Example 2)
(Electrolyzer for polymer membrane production)
First, an electrolytic device 100 for producing a polymer film shown in FIG. 3 was produced. As the cathode 14 and the anode 16, a stainless steel substrate (length: 10 mm, width: 10 mm) was used. As the conductive substrate 18, a glass substrate (vertical: 10 mm, horizontal: 10 mm) whose surface was coated with ITO was used. Further, a polypropylene substrate was used as the insulating partition wall 22. A rectangular opening 24 having a width of 2 mm is provided at the center of the insulating partition wall 22.
In addition, the width | variety of the electrolytic polymerization tank 12 was 20 mm, and length was 35 mm. The distance between the cathode 14 and the conductive substrate 18 was 15 mm, and the distance between the cathode 14 and the insulating partition wall 22 was 16 mm. Moreover, the distance between the anode 16 and the insulating partition 22 was 16 mm.
Further, as shown in FIG. 1, the cathode 14, the anode 16, the conductive substrate 18, and the insulating partition wall 22 were arranged so as to be substantially parallel to each other.

(電解重合)
実施例1と同様の溶液Wを使用して、同様の条件で膜厚30nmの高分子膜(ポリ(3,4−エチレンジオキシチオフェン)(PEDOT)膜)を製造した。
(Electrolytic polymerization)
Using the same solution W as in Example 1, a polymer film (poly (3,4-ethylenedioxythiophene) (PEDOT) film) with a film thickness of 30 nm was produced under the same conditions.

(表面粗さ評価)
ナノスケールハイブリッド顕微鏡(キーエンス VN−8000)を用いて、得られた高分子膜の二乗平均粗さ(RMS)を測定したところ、7.1nmであった。
また、導電性基板18表面上(片面上)における高分子膜の被覆率を測定したところ、100%であった。なお、被覆率は、得られた導電性基板の表面上を顕微鏡観察して、導電性基板18の溶液Wに浸漬した部分の片面の面積から算定した。
該結果より、絶縁性隔壁22を設けることにより、高分子膜の被覆率が向上することが確認された。
(Surface roughness evaluation)
It was 7.1 nm when the root mean square roughness (RMS) of the obtained polymer film was measured using the nanoscale hybrid microscope (Keyence VN-8000).
Moreover, when the coverage of the polymer film on the surface (one side) of the conductive substrate 18 was measured, it was 100%. The coverage was calculated from the area of one side of the portion immersed in the solution W of the conductive substrate 18 by observing the surface of the obtained conductive substrate with a microscope.
From the results, it was confirmed that the coating rate of the polymer film was improved by providing the insulating partition 22.

(比較例1)
図7に示す高分子膜製造用電解装置300を作製した。陰極306としては、ステンレス基板(縦:10mm、横:10mm)を使用した。陽極308としては、ITOで表面が被覆されたガラス基板(縦:10mm、横:10mm)を使用した。陰極306と陽極308との間の距離は、16mmであった。
また、電解液302としては、ブチルナフタレンスルホン酸ナトリウム(10mM)および3,4−エチレンジオキシチオフェン(EDOT)(20mM)を含む水溶液を調製した。
次に、0.1mA/cm2定電流電解重合(電解時間60秒)を行い、陽極308表面に膜厚30nmの高分子膜(ポリ(3,4−エチレンジオキシチオフェン)(PEDOT)膜)を製造した。
得られた高分子膜の二乗平均粗さ(RMS)を測定したところ、8.0nmであり、実施例1および実施例2の形態に比べて劣っていた。
(Comparative Example 1)
An electrolytic apparatus 300 for polymer film production shown in FIG. 7 was produced. As the cathode 306, a stainless steel substrate (length: 10 mm, width: 10 mm) was used. As the anode 308, a glass substrate (length: 10 mm, width: 10 mm) whose surface was coated with ITO was used. The distance between the cathode 306 and the anode 308 was 16 mm.
Moreover, as the electrolytic solution 302, an aqueous solution containing sodium butylnaphthalenesulfonate (10 mM) and 3,4-ethylenedioxythiophene (EDOT) (20 mM) was prepared.
Next, 0.1 mA / cm 2 constant current electropolymerization (electrolysis time 60 seconds) is performed, and a polymer film (poly (3,4-ethylenedioxythiophene) (PEDOT) film) having a film thickness of 30 nm is formed on the surface of the anode 308. Manufactured.
When the root mean square roughness (RMS) of the obtained polymer film was measured, it was 8.0 nm, which was inferior to the forms of Example 1 and Example 2.

(その他評価)
(光学的評価)
実施例2および比較例1で得られた高分子膜付き基板に対して、紫外可視近赤外分光光度計 UV−3600を用いて、それぞれの透過率を測定した。結果を図5に示す。図5において、実施例2の形態を「ITO/PEDOT(bipolar)」、比較例1の形態を「ITO/PEDOT(normal)」、高分子膜を有さない導電性基板18を「pure ITO」として表示する。
図5に示すように、実施例2で得られた高分子膜は、従来法(比較例1)で製造された高分子膜と同様に、高い透過率を示し、優れた透明性を有することが確認された。
(Other evaluation)
(Optical evaluation)
The transmittance | permeability was measured with respect to the board | substrate with a polymer film obtained in Example 2 and Comparative Example 1 using ultraviolet visible near-infrared spectrophotometer UV-3600. The results are shown in FIG. In FIG. 5, the form of Example 2 is “ITO / PEDOT (bipolar)”, the form of Comparative Example 1 is “ITO / PEDOT (normal)”, and the conductive substrate 18 having no polymer film is “pure ITO”. Display as.
As shown in FIG. 5, the polymer film obtained in Example 2 exhibits high transmittance and excellent transparency, similar to the polymer film produced by the conventional method (Comparative Example 1). Was confirmed.

(電気化学的評価)
色素増感太陽電池の対極材料として主に白金が使用されるが、PEDOTなどの導電性高分子も利用可能である。特に、PEDOTのような導電性高分子透明材料を用いれば低コスト化、全透明化が期待される。
そこで、実施例2で作製した高分子膜付き基板を用いて、ヨウ素化合物の還元反応をサイクリックボルタンメトリー(北斗電工 HZ−3000)で測定し、高分子膜(PEDOT膜)の電極触媒能を検討した。より具体的にはI2(1mM)、LiI(10mM)、LiBF4(1M)を含むアセトニトリル中において、白金電極および実施例で作製した高分子膜付き基板を用いた場合のサイクリックボルタンメトリー測定を行った(図6)。実施例2で得られた高分子膜付き基板を使用した場合(図6(B))、その挙動は白金電極の場合(図6(A))と同等であり、白金電極の代わりに使用できることが確認された。
(Electrochemical evaluation)
Platinum is mainly used as the counter electrode material of the dye-sensitized solar cell, but a conductive polymer such as PEDOT can also be used. In particular, if a conductive polymer transparent material such as PEDOT is used, cost reduction and total transparency can be expected.
Therefore, the reduction reaction of the iodine compound was measured by cyclic voltammetry (Hokuto Denko HZ-3000) using the substrate with the polymer film prepared in Example 2, and the electrode catalytic ability of the polymer film (PEDOT film) was examined. did. More specifically, cyclic voltammetry measurement in the case of using a platinum electrode and a substrate with a polymer film prepared in Examples in acetonitrile containing I 2 (1 mM), LiI (10 mM), and LiBF 4 (1M). Performed (FIG. 6). When the substrate with the polymer film obtained in Example 2 is used (FIG. 6B), the behavior is the same as that of the platinum electrode (FIG. 6A) and can be used instead of the platinum electrode. Was confirmed.

10,100,200,300 高分子膜製造用電解重合装置
12,304 重合槽
14,306 陰極
16,308 陽極
18,18a,18b 導電性基板
20,310 電源
22絶縁性隔壁
24 開口部
26 帯状導電性基板
28 ローラ
302 電解液
W 電解重合性モノマーと支持電解質とを含む溶液
10, 100, 200, 300 Electropolymerization apparatus for polymer film production 12,304 Polymerization tank 14,306 Cathode 16,308 Anode 18, 18a, 18b Conductive substrate 20,310 Power source 22 Insulating partition 24 Opening 26 Band-like conductivity Substrate 28 Roller 302 Electrolytic solution W Solution containing electropolymerizable monomer and supporting electrolyte

Claims (6)

電解重合性モノマーと支持電解質とを含む溶液中に浸漬された陰極と陽極との間に、前記陰極または前記陽極と主面が対向するように導電性基板を前記溶液中に浸漬し、前記陰極と前記陽極との間に電圧を印加し、バイポーラ現象を利用して、前記導電性基板表面上に前記電解重合性モノマーの電解重合により高分子膜を製造する、高分子膜の製造方法であって、前記電圧を印加する前に、前記導電性基板と前記陰極との間または前記導電性基板と前記陽極との間に、前記溶液が流通する開口部を有する絶縁性隔壁を配置する、高分子膜の製造方法。   An electroconductive substrate is immersed in the solution so that the cathode or the anode and the main surface face each other between a cathode and an anode immersed in a solution containing an electropolymerizable monomer and a supporting electrolyte, and the cathode A method of producing a polymer film, wherein a voltage is applied between the anode and the anode, and a polymer film is produced on the surface of the conductive substrate by electrolytic polymerization of the electropolymerizable monomer using a bipolar phenomenon. An insulating partition having an opening through which the solution flows is disposed between the conductive substrate and the cathode or between the conductive substrate and the anode before applying the voltage; A method for producing a molecular film. 前記絶縁性隔壁が、前記導電性基板の中心部と対向する位置に開口部を有する、請求項1に記載の高分子膜の製造方法。   The method for producing a polymer film according to claim 1, wherein the insulating partition has an opening at a position facing a central portion of the conductive substrate. 前記溶液中における支持電解質の濃度が、1000mM以下である、請求項1または2に記載の高分子膜の製造方法。   The method for producing a polymer membrane according to claim 1 or 2, wherein the concentration of the supporting electrolyte in the solution is 1000 mM or less. 前記電解重合性モノマーが、ベンゼン、ピロール、アニリン、フェノール、フタロシアニン、チオフェン、フラン、アズレンおよびこれらの誘導体からなる群から選ばれる少なくとも1つを含む、請求項1〜3のいずれかに記載の高分子膜の製造方法。   The high in any one of Claims 1-3 in which the said electropolymerizable monomer contains at least 1 chosen from the group which consists of benzene, pyrrole, aniline, phenol, phthalocyanine, thiophene, furan, azulene, and these derivatives. A method for producing a molecular film. 導電性基板表面上に高分子膜を製造するための高分子膜製造用電解重合装置であって、
電解重合性モノマーと支持電解質とを含む溶液が収容される電解重合槽と、
前記電解重合槽内に配置される陰極および陽極と、
前記電解重合槽内において、前記陰極または前記陽極と主面が対向するように前記陰極と前記陽極との間に配置される導電性基板と、
前記電解重合槽内において、前記導電性基板と前記陰極との間または前記導電性基板と前記陽極との間に配置される、前記溶液が流通する開口部を有する絶縁性隔壁とを有し、
前記陰極と前記陽極との間に電圧を印加し、バイポーラ現象を利用して、前記導電性基板表面上に前記電解重合性モノマーの電解重合により高分子膜を製造する、高分子膜製造用電解重合装置。
An electropolymerization apparatus for producing a polymer film for producing a polymer film on the surface of a conductive substrate,
An electropolymerization tank in which a solution containing an electropolymerizable monomer and a supporting electrolyte is accommodated;
A cathode and an anode disposed in the electrolytic polymerization tank;
In the electrolytic polymerization tank, a conductive substrate disposed between the cathode and the anode so that the cathode or the anode and the main surface face each other,
In the electrolytic polymerization tank, having an insulating partition having an opening through which the solution flows, disposed between the conductive substrate and the cathode or between the conductive substrate and the anode,
Electrolysis for polymer film production in which a voltage is applied between the cathode and the anode, and a polymer film is produced on the surface of the conductive substrate by electropolymerization of the electropolymerizable monomer using a bipolar phenomenon. Polymerization equipment.
前記絶縁性隔壁が、前記導電性基板の中心部と対向する位置に開口部を有する、請求項に記載の高分子膜製造用電解重合装置。 The electropolymerization apparatus for producing a polymer film according to claim 5 , wherein the insulating partition has an opening at a position facing the central portion of the conductive substrate.
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