JP5984582B2 - Method of cleaning chamber constituent member for nitride semiconductor manufacturing apparatus - Google Patents

Description

  The present invention relates to a cleaning apparatus for a nitride semiconductor manufacturing apparatus, and more particularly, a cleaning apparatus for a nitride semiconductor manufacturing apparatus for cleaning components of an apparatus for manufacturing a nitride semiconductor such as gallium nitride, indium nitride, and aluminum nitride. And a cleaning method.

  An apparatus for manufacturing a gallium nitride semiconductor which is one of nitride semiconductors, for example, arranges a sapphire substrate in a quartz chamber and heats the substrate to a predetermined temperature. By introducing trimethylgallium and ammonia as gases and reacting the source gas near the surface of the substrate, gallium nitride is vapor-grown on the surface of the substrate to form a gallium nitride semiconductor. In such a gallium nitride semiconductor manufacturing apparatus, when the formation of the gallium nitride semiconductor is repeatedly performed, not only the surface of the substrate but also the inner surface of the chamber, gallium nitride as a reaction product, unreacted raw material, intermediate product Adhering to the gallium nitride semiconductor may adversely affect the formation of gallium nitride semiconductors. Need to be removed. As a method of cleaning the chamber constituent member of the gallium nitride semiconductor manufacturing apparatus, a method in which the chamber constituent member is brought into contact with a chlorine-based gas in a heated state and the gallium nitride adhering to the chamber constituent member is reacted with the chlorine-based gas to be removed. And an apparatus are known (for example, refer to Patent Document 1).

JP 2006-332201 A

  However, chlorides such as gallium chloride and ammonium chloride generated by the reaction between gallium nitride and chlorinated gas adhere to the inner surface of the metal piping parts that make up the cleaning exhaust gas extraction path that extracts the cleaning exhaust gas from the cleaning device. There was a problem to do. Since chloride attached to metal piping parts forms a solid solid, it is difficult to remove chloride from metal piping parts. Had to be replaced. Also, in nitride semiconductors other than gallium nitride, chlorides such as indium chloride and aluminum chloride are generated in addition to ammonium chloride by the same cleaning operation. Have the following issues. In addition, when an intermediate product other than gallium nitride attached to the chamber constituent member reacts with the chlorine-based gas, gallium chloride or ammonium chloride is similarly generated.

  Therefore, the present invention can suppress the adhesion of chloride in the cleaning exhaust gas to the inner surface of the cleaning exhaust gas discharge path, and can easily remove even if the chloride adheres to the inner surface of the cleaning exhaust gas discharge path. It is an object of the present invention to provide a cleaning apparatus for cleaning a chamber component removed from the nitride semiconductor manufacturing apparatus using the nitride semiconductor manufacturing apparatus cleaning apparatus.

  In order to achieve the above object, a cleaning apparatus for a nitride semiconductor manufacturing apparatus according to the present invention arranges and heats a substrate in a chamber, and introduces a source gas into the chamber to react with the substrate surface. In a cleaning apparatus for removing a reaction product adhering to a chamber constituent member by removing the chamber constituent member constituting the chamber in the nitride semiconductor manufacturing apparatus for forming a nitride semiconductor from the nitride semiconductor manufacturing apparatus and cleaning the same. A sealable cleaning container that houses the chamber component to which the reaction product adheres, heating means for heating the cleaning container, and a cleaning gas introduction path for introducing a chlorine-based cleaning gas into the cleaning container; A dilution gas introduction path for introducing a dilution gas inert to the chlorine-based cleaning gas into the cleaning container; and the cleaning volume An exhaust gas exhaust path for deriving the cleaning exhaust gas from the inside, and a detoxifying device for performing detoxification treatment of the exhaust gas derived to the exhaust gas exhaust path, and at least a portion in contact with the exhaust gas in the exhaust gas exhaust path It is characterized by using a metal piping part on which a coating of [1] is formed.

The chlorine-based cleaning gas in the nitride semiconductor manufacturing apparatus cleaning device of the present invention is Cl ₂ , HCl, SiCl ₄ , SiHCl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl, BCl ₃ , CHCl ₃ , CH ₂ Cl _2. , CH ₃ Cl is preferably at least one kind of chlorine-based gas. The synthetic resin is preferably a synthetic resin of at least one of polyvinylidene fluoride, polychlorotrifluoroethylene, polyvinyl chloride, and polyethylene. Furthermore, the dilution gas is preferably at least one of nitrogen, hydrogen, helium, and argon.

  The method of cleaning a chamber constituent member for a nitride semiconductor manufacturing apparatus according to the present invention is a method of cleaning the chamber constituent member using the cleaning device for a nitride semiconductor manufacturing apparatus, wherein the reaction adhered to the chamber constituent member The cleaning operation for removing the product includes the step of housing the chamber component in the cleaning container and sealing the cleaning container, the step of heating the cleaning container to a preset temperature by the heating means, A chlorine-based cleaning gas is introduced into the cleaning container from the chlorine-based cleaning gas introduction path, and the dilution gas is introduced into the cleaning container from the dilution gas introduction path to clean and clean the chamber components housed in the cleaning container. A step of introducing the exhaust gas led out from the container to the exhaust gas lead-out path into the abatement apparatus, and stopping the introduction of the chlorine-based cleaning gas into the cleaning container The heating means is stopped at this time, and the cleaning procedure including the step of cooling the inside of the cleaning container while continuing the introduction of the dilution gas and the step of taking out the chamber components after cleaning from the cleaning container are performed and set in advance. When the cleaning operation is performed a number of times, the cleaning operation of the chamber constituent member is interrupted, the piping part of the exhaust gas exhaust path is removed from the cleaning device, and the synthetic resin coating is peeled off from the piping part; A pipe part regeneration operation including a step of forming a coating film on the pipe part is performed, and after the pipe part regeneration operation is completed, the cleaning operation of the chamber constituent member is resumed after the pipe part is attached to the cleaning device.

  In the cleaning method, the synthetic resin film is preferably peeled off using at least one organic solvent of dimethylformamide, acetone, ethyl acetate, diethyl ether, trichloroethylene, and dimethylacetamide.

  According to the present invention, at least one non-adhesive property of a synthetic resin, in particular, polyvinylidene fluoride, polychlorotrifluoroethylene, polyvinyl chloride, and polyethylene, in a portion that contacts exhaust gas in a metal pipe component that serves as an exhaust gas lead-out path Since the synthetic resin coating is formed, the chlorine-containing components (chlorides) in the exhaust gas do not accumulate and remain in the exhaust gas discharge path, and the entire amount of exhaust gas is introduced into the abatement device to prevent environmental pollution. The resulting chloride can be reliably removed. In addition, even if chloride adheres to the surface of the coating by repeating the cleaning operation, after removing the coating with the chloride removed, the metal piping parts can be reused by forming a new coating. can do.

It is explanatory drawing which shows one example of the washing | cleaning apparatus for nitride semiconductor manufacturing apparatuses of this invention. It is explanatory drawing which shows an example of washing | cleaning operation including piping components reproduction | regeneration operation.

  In this embodiment, a typical gallium nitride will be described as an example of a nitride semiconductor. As shown in FIG. 1, a cleaning device for a nitride semiconductor manufacturing apparatus removes a chamber component to which gallium nitride, which is a reaction product when manufacturing a gallium nitride semiconductor, from a gallium nitride semiconductor manufacturing apparatus (not shown). A cleaning container 11 that can be sealed to house the chamber constituent member, a heating unit 12 that heats the chamber constituent member housed in the cleaning container 11, and the cleaning container 11. A cleaning gas introduction path 13 for introducing a chlorine-based cleaning gas into the cleaning container 11, a dilution gas introduction path 14 for introducing a diluent gas inert to the chlorine-based cleaning gas into the cleaning container 11, and the cleaning container 11 An exhaust gas extraction path 15 for deriving the cleaning exhaust gas, and a detoxification device 16 that performs a detoxification process for the exhaust gas extracted to the exhaust gas extraction path 15 are provided.

  The cleaning container 11 is made of a material that can withstand a chlorine-based gas and can withstand a high temperature during cleaning, for example, an inorganic material such as quartz or aluminum oxide. A door or lid is provided. As the heating means 12 for heating the chamber constituent member accommodated in the cleaning container 11, any heating means 12 can be used as long as the chamber constituent member can be heated to a preset temperature. It is preferable to use a cold wall type heating means that can effectively and efficiently heat only the chamber constituent members in the container, rather than the wall type. The abatement device 16 can use various abatement devices that adsorb chlorinated gases such as chlorides or perform thermal decomposition, but normally, chlorinated gases are selectively used. An adsorption-type abatement apparatus using an adsorbent adsorbed on the substrate may be used.

The cleaning gas introduction path 13 is for introducing a chlorine-based cleaning gas, which is a main component for removing gallium nitride adhering to the chamber constituent members, into the cleaning container 11, and is a gas filled with the chlorine-based gas. A container 17, a pressure control valve 18 that adjusts the introduction pressure of the chlorine-based gas, a flow rate regulator 19 that adjusts the introduction flow rate of the chlorine-based gas, and an on-off valve 20 that controls the introduction of the chlorine-based gas are provided. . As the chlorine-based cleaning gas, various chlorine-based gases containing chlorine in the molecule can be used. However, in consideration of an acquisition route and cost, normally, Cl ₂ , HCl, SiCl ₄ , SiHCl ₃ , SiH ₂ Cl _{2 are used.} , SiH ₃ Cl, BCl ₃ , CHCl ₃ , CH ₂ Cl ₂ , and CH ₃ Cl can be used. These chlorine-based gases are usually used alone, but a plurality of types can be appropriately mixed and used. Such a chlorine-based gas reacts with gallium nitride attached to the chamber constituent member to generate gallium chloride and ammonium chloride, thereby removing gallium nitride from the chamber constituent member.

  The dilution gas introduction path 14 is used for diluting the concentration of the chlorine-based gas in the cleaning container 11 to a concentration suitable for cleaning, and for purging the chlorine-based gas from the cleaning container 11 after the cleaning operation. A dilution gas is introduced into the cleaning container 11 and includes a gas container 21 filled with the dilution gas, a pressure control valve 22 for adjusting the introduction pressure of the dilution gas, and a flow rate adjustment for adjusting the introduction flow rate of the dilution gas. And an opening / closing valve 24 for controlling the introduction of the dilution gas. As the dilution gas, any gas can be used as long as it is inert with respect to the chlorine-based cleaning gas. Usually, a gas obtained by mixing nitrogen, hydrogen, helium, and argon alone or appropriately mixed is used. it can. In addition, the introduction ratio of the chlorine-based gas and the dilution gas, that is, the concentration of the chlorine-based gas, can be appropriately set according to the type of the chlorine-based gas.

  The exhaust gas lead-out path 15 is formed of a piping component such as a metal pipe or a joint having a synthetic resin coating applied to at least a portion in contact with the exhaust gas. The type of metal forming the piping component is arbitrary, and a normal metal piping component used in connection with this type of semiconductor manufacturing apparatus, such as stainless steel and copper, can be used. As the synthetic resin, it is preferable to select a synthetic resin that can easily form a coating on a piping component and that can be easily removed from the piping component. Further, the synthetic resin is a synthetic resin that can form a non-adhesive coating on the surface. It is desirable to be. Examples of such synthetic resins include polyvinylidene fluoride, polychlorotrifluoroethylene, polyvinyl chloride, and polyethylene. Among them, fluorine resins such as polyvinylidene fluoride and polychlorotrifluoroethylene are preferable. Has a C—F bond with a large binding energy, and is higher than the binding energy of C—Cl bond and C—H bond of polyvinyl chloride and polyethylene, so it has a non-stick property, that is, a substance is difficult to adhere to. Therefore, it is possible to effectively suppress the solid matter of gallium chloride or ammonium chloride generated by the temperature reduction of the exhaust gas from adhering to the coating surface. Furthermore, among fluororesins, polyvinylidene fluoride and polychlorotrifluoroethylene are relatively easily dissolved in an organic solvent, so that formation of a coating on a piping component and removal from the piping component can be easily performed. It is optimal as a synthetic resin coating material to be formed on piping parts.

  Film formation on piping parts differs depending on the structure of the piping parts.For example, in the case of pipes, a synthetic resin solution dissolved in an appropriate solvent at an appropriate concentration is circulated in the pipes or sprayed into the pipes. Then, after forming a liquid film of the synthetic resin solution, the synthetic resin film can be formed on the inner surface of the pipe contacting the exhaust gas by evaporating the solvent while heating as necessary. It is also possible to immerse the entire piping component such as a pipe in a synthetic resin solution to form a synthetic resin coating on the entire component. The solvent can be appropriately selected depending on the type of synthetic resin that forms the film, and dimethylformamide, acetone, ethyl acetate, diethyl ether, trichloroethylene, dimethylacetamide, and the like can be suitably used. Acetone and trichlorethylene are optimal.

  Thus, by forming the synthetic resin coating on the piping parts of the exhaust gas outlet path 15, gallium chloride and ammonium chloride in the cleaning exhaust gas are difficult to adhere to the exhaust gas outlet path 15, and the inspection cycle of the exhaust gas outlet path 15 is extended. The maintenance work can be reduced and the cost required for the maintenance can be reduced.

  Further, when gallium chloride or ammonium chloride adheres to the surface of the synthetic resin film of the exhaust gas outlet path 15, the synthetic resin film to which gallium chloride or ammonium chloride adheres is removed from the piping parts of the exhaust gas outlet path 15, and then the piping parts By forming a new synthetic resin film, the piping parts of the exhaust gas outlet path 15 can be reused. It is possible to remove the synthetic resin film from the piping parts by mechanical and physical removal methods using shot blasting or scraper, but the synthetic resin film is used as the solvent using the solvent used for film formation. By making it melt | dissolve, the removal of the synthetic resin film from piping components can be performed easily. The piping component from which the synthetic resin film has been removed can be reused as the piping component of the exhaust gas outlet path 15 by newly forming the synthetic resin coating as described above.

  Next, an example of the cleaning operation in the cleaning apparatus in which the exhaust gas discharge path 15 having a synthetic resin film formed between the cleaning container 11 and the abatement apparatus 16 will be described with reference to FIG. First, the process 1 of the first step 51 is a process of forming a synthetic resin film on at least a portion of the metal piping component that comes into contact with the cleaning exhaust gas. As described above, the solution in which the synthetic resin is dissolved is applied to the piping component. Then, by evaporating the solvent, a synthetic resin film is formed at a predetermined position of the piping component. For example, a coating agent made of a solution of polyvinylidene fluoride dissolved in acetone is applied to a predetermined position of a pipe part, heated to 200 to 300 ° C. and allowed to stand for a certain time, for example, 5 to 10 minutes to evaporate the solvent. A synthetic resin film is formed by curing polyvinylidene fluoride.

  Step 52 of Step 52 is a step of removing parts such as a chamber constituent member, for example, a quartz wafer tray made of gallium nitride, from the nitride semiconductor manufacturing apparatus, and Step 3 of Step 53 is from the nitride semiconductor manufacturing apparatus. In this step, the removed parts are carried into a cleaning device, accommodated in the cleaning container 11 and sealed. Step 4 of Step 54 is a step of operating the heating means 12 to heat the parts accommodated in the cleaning container 11 to a preset temperature of 500 ° C. or higher, for example, 900 while flowing a small amount of dilution gas. Heat to about ℃.

  In step 5 of step 55, the on-off valves 20 and 24 are opened, the chlorine-based cleaning gas is supplied from the cleaning gas introduction path 13, the dilution gas is supplied from the dilution gas introduction path 14, and the pressure is set in advance and the flow rate is set in advance. This is a step of cleaning the parts by introducing them into the cleaning container 11. For example, the pressure is set to 0.1 MPa (atmospheric pressure), the chlorine-based cleaning gas is introduced at 100 sccm, and the dilution gas is introduced at 1 slm. A cleaning operation for removing gallium nitride adhering to the substrate by reacting with a chlorine-based cleaning gas is performed. This cleaning process is performed for a preset time, for example, for about 2 hours to sufficiently clean the parts. The gas in the cleaning container 11 during the cleaning process is sent to the abatement device 16 through the exhaust gas outlet path 15, and is discharged after the detoxification process.

  Step 6 of step 56 is a step of lowering the temperature of the cleaning container 11 after cleaning, and stops the heating means 12 and closes the on-off valve 20 to stop the introduction of the chlorine-based cleaning gas, and introduces the dilution gas. The cleaning container 11 is allowed to stand for a preset time, and the inside of the cleaning container 11 is cooled to room temperature. At the same time, the chlorine-based cleaning gas and chloride generated by the reaction are purged from the cleaning container 11 with a dilution gas. Step 7 of step 57 is a step of taking out the parts at room temperature from the cleaning container 11 and carrying them out to the nitride semiconductor manufacturing apparatus.

  Normally, after step 7 in step 57 is completed, the process returns to step 2 in step 52 as indicated by arrow A, and the cleaning operation for the parts removed from the nitride semiconductor manufacturing apparatus is repeated. By repeating this cleaning operation, when the chloride adheres to and accumulates on the exhaust gas outlet path 15 or after a predetermined number of cleaning operations, the process from step 7 to step 58 of step 57 is performed. Proceeding to step 8, the step of removing the synthetic resin film from the piping parts of the exhaust gas outlet path 15 and cleaning the piping parts is performed.

  In Step 8, after Step 7 of Step 57 is finished, the diluent gas is allowed to flow from the diluent gas introduction path 14 to the exhaust gas outlet path 15 through the cleaning container 11 for a preset time, for example, one hour, After sufficiently purging the chlorine-based cleaning gas and chloride from the exhaust gas outlet path 15, the piping parts are removed from the cleaning device, and the synthetic resin film to which chloride or the like is attached is removed. For example, when a coating agent in which polyvinylidene fluoride is dissolved in acetone is used to form a synthetic resin coating, acetone is applied to the piping component and the polyvinylidene fluoride coating is dissolved in acetone to remove the polyvinyl fluoride from the piping component. The vinylidene film can be peeled off and the chloride adhering to the film can be removed simultaneously. After the process 8 of step 58 is completed, the process returns to the process 1 of the step 51 as indicated by the arrow B, and after performing the process of re-forming the synthetic resin film at a predetermined position of the piping part from which the synthetic resin film has been removed, the cleaning is performed. Attach piping parts to the equipment. As a result, it is possible to repeatedly perform the cleaning operation of the piping parts from Step 2 of Step 52 to Step 7 of Step 57 using the piping parts in which the synthetic resin film is re-formed.

  In addition, although the gallium nitride semiconductor was illustrated and demonstrated as a nitride semiconductor, it is the same also in various nitride semiconductors containing other indium and aluminum, and is not limited to the kind of nitride semiconductor.

  A polyvinylidene fluoride resin coating agent consisting of a solution of polyvinylidene fluoride dissolved in acetone is applied to the inner surface of a stainless steel pipe with a sprayer, and heated to about 250 degrees for about 10 minutes using a heat gun to be polyvinylidene fluoride. After curing, the pipe on which the polyvinylidene fluoride film was formed was attached between the cleaning container of the cleaning device and the abatement device. On the other hand, in order to simulate a chamber constituent member to be cleaned, a quartz substrate on which a gallium nitride crystal having a film thickness of 500 nm was formed was cut into 1 cm square using a gallium nitride semiconductor manufacturing apparatus as a sample.

  The sample was sealed in a cleaning container, and the cleaning container was heated by a heating means while flowing a dilution gas at 1 slm. After the inside of the cleaning container reached 900 ° C., chlorine gas was introduced as a chlorine-based cleaning gas at 100 sccm, and the sample was cleaned for 2 hours. Thereafter, heating and introduction of chlorine gas were stopped, and cooling was performed until the temperature returned to room temperature while flowing a dilution gas at 1 slm. After cooling, the sample was taken out from the cleaning container and the surface was observed with an electron microscope. As a result, the gallium nitride film was completely removed from the substrate surface, and it was confirmed that the cleaning process was sufficiently performed.

  This sample was repeatedly washed, and after 10 treatments, 20 treatments, and 30 treatments, the inner surface of the pipe was observed, but no adhesion or deposition of chloride on the inner surface of the pipe was observed. Further, after the treatment was performed 30 times, the piping was removed from the cleaning device, and the polyvinylidene fluoride coating was removed using acetone. The inner surface of the pipe was observed after the removal treatment, but no resin film or deposit residue was observed. Thereafter, by newly forming a polyvinylidene fluoride coating on the inner surface of the pipe, the pipe could be reused without any problem.

  The experiment was performed in the same manner as in Example 1 except that the synthetic resin for forming a coating on the inner surface of the pipe was replaced with polychlorotrifluoroethylene and the solvent was replaced with trichloroethylene. In the same manner as in Example 1, the inner surface of the pipe was observed after 10 treatments, 20 treatments, and 30 treatments, and it was confirmed that there was no adhesion or accumulation of chloride. On the other hand, when the polychlorotrifluoroethylene coating was removed using trichlorethylene after 30 times of treatment, a very small amount of resin residue was observed, but no residue such as chloride was observed. The film could be removed, and the resin film could be re-formed on the inner surface of the pipe without any problem, and there was no problem even if the pipe was reused.

  The experiment was performed in the same manner as in Example 1 except that the synthetic resin for forming the coating on the inner surface of the pipe was replaced with polyvinyl chloride and the solvent was replaced with trichlorethylene. In the same manner as in Example 1, when the inner surface of the pipe was observed after 10 treatments, 20 treatments, and 30 treatments, slight chloride deposition was observed after 20 treatments. Moreover, after removing the polyvinyl chloride film using trichlorethylene after 30 times of treatment, a very slight resin residue was observed, but most of the resin film could be removed together with the deposited chloride. did it. Also in this example, the resin film could be reshaped on the inner surface of the pipe without any problem, and there was no problem even if the pipe was reused.

(Comparative example)
A stainless steel pipe without resin coating was attached to the cleaning device, and the same experiment as in Example 1 was performed. As a result, a slight amount of chloride was observed on the inner surface of the pipe after the 10th treatment, and the chloride deposition increased as the treatment was repeated after the 20th treatment and after the 30th treatment. Although an attempt was made to remove the chloride deposited on the inner surface of the pipe after 30 treatments, it could not be removed easily by a physical method or a chemical method, and the pipe could not be reused.

Table 1 summarizes the experimental results of Examples 1 to 3 and the comparative example.

  DESCRIPTION OF SYMBOLS 11 ... Cleaning container, 12 ... Heating means, 13 ... Cleaning gas introduction path, 14 ... Dilution gas introduction path, 15 ... Exhaust gas extraction path, 16 ... Detoxification device, 17 ... Gas container, 18 ... Pressure control valve, 19 ... Flow rate Regulator, 20 ... Open / close valve, 21 ... Gas container, 22 ... Pressure control valve, 23 ... Flow rate regulator, 24 ... Open / close valve

Claims (2)

The chamber component constituting the chamber of said nitride semiconductor device has been removed from the nitride semiconductor manufacturing device a washing Kiyoshisu Ru washing device, sealable housing the chamber component which reaction product is adhered Cleaning container, heating means for heating the inside of the cleaning container, a cleaning gas introduction path for introducing a chlorine-based cleaning gas into the cleaning container, and cleaning the inert gas diluted with respect to the chlorine-based cleaning gas A dilution gas introduction path for introducing into the container, an exhaust gas extraction path for deriving the cleaning exhaust gas from the cleaning container, and a detoxification device for performing detoxification processing of the exhaust gas derived into the exhaust gas extraction path, and the exhaust gas the derived path, using said nitride semiconductor manufacturing apparatus cleaning device using the metal pipe parts forming a coating of at least part synthetic resin in contact with the exhaust gas Ji A cleaning operation for removing a reaction product adhering to the chamber constituent member, the step of housing the chamber constituent member in the cleaning container and sealing the cleaning container; A step of heating the inside of the cleaning container to a preset temperature by a heating means, a chlorine-based cleaning gas is introduced into the cleaning container from the chlorine-based cleaning gas introduction path, and the dilution gas is cleaned from the dilution gas introduction path Cleaning the chamber components housed in the cleaning container and introducing the exhaust gas led out from the cleaning container to the exhaust gas discharge path into the detoxifying device, and the chlorine-based cleaning gas in the cleaning container Stopping the introduction and stopping the heating means, cooling the inside of the cleaning container while continuing the introduction of the dilution gas, and the chamber structure after cleaning from inside the cleaning container A cleaning procedure including a step of removing the member, and when a predetermined number of cleaning operations are performed, the cleaning operation is interrupted, and the piping parts of the exhaust gas discharge path are removed from the cleaning device, and the synthetic resin A piping part regeneration operation including a step of peeling the coating film from the piping component and a step of forming a synthetic resin coating film on the piping component is performed, and after the piping component regeneration operation is completed, the piping component is attached to a cleaning device and then the cleaning is performed. A method of cleaning a chamber constituent member for a nitride semiconductor manufacturing apparatus that resumes operation. The release of the synthetic resin of the coating, dimethylformamide, acetone, ethyl acetate, diethyl ether, trichlorethylene, nitride semiconductor manufacturing equipment chambers constituting member according to claim 1, wherein performing using at least any one of an organic solvent dimethylacetamide Cleaning method.

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