JP6095421B2 - Metal filling method and metal filling apparatus - Google Patents

Description

  The present invention relates to a metal filling method for filling a minute space formed on a surface to be processed with a molten metal and a metal filling apparatus used therefor.

  Recently, in the through silicon via technique, there is a demand for a technique for filling a via or a through hole (microspace) provided on a semiconductor wafer (object to be processed) with a metal. According to the silicon through-electrode technology, it is possible to develop a chip stacking technology using the through-electrode, and therefore, it is expected to realize a high-functional and high-speed operation semiconductor system by three-dimensional mounting.

  Then, as described above, as a method of filling the minute space on the workpiece with the metal, for example, in the reduced pressure chamber, the minute space is formed on one surface of the sample in which the minute space to be filled with the metal is formed. A method has been proposed in which molten metal is supplied so as to cover the inside of the vacuum chamber, and the inside of the vacuum chamber is pressurized to an atmospheric pressure or higher with an inert gas, thereby vacuuming the molten metal into a minute space (Japanese Patent Laid-Open No. 2002-368083). Issue gazette). According to this method, the molten metal can be sucked into the minute space by the pressure difference generated between the minute space on the workpiece and the vacuum chamber.

  However, the method disclosed in Japanese Patent Laid-Open No. 2002-368083 has the following problems. That is, if the wettability between the object to be processed and the molten metal is poor, the molten metal supplied onto the object to be processed is repelled by the surface tension. Therefore, in the above method, one surface of the object to be processed is covered with a large amount of molten metal. Therefore, it is necessary to prevent the molten metal from being repelled by the surface tension. Therefore, a thick layer made of surplus metal is formed on the treated object, and this has to be removed in a subsequent process. In addition, since a large amount of molten metal is required, the equipment cost associated with the construction of a large-capacity heating means, the molten metal property maintaining means, etc. has increased, and the running cost associated with increased material consumption has also increased. .

  Accordingly, the present applicant has proposed a metal filling apparatus capable of minimizing the thickness of the layer made of surplus metal formed on the object to be processed as a solution to the above problem. (Japanese Patent Application No. 2012-167761).

  This metal filling apparatus includes a holding base for holding an object to be processed, a cylindrical housing disposed opposite to the holding base, and an object to be processed that is inserted into the internal space of the housing and held on the holding base. An airtight processing chamber is formed by an object to be processed, a housing, and a piston held by a holding table. In addition, the metal filling apparatus includes a decompression mechanism that decompresses the processing chamber, a gas pressurization mechanism that supplies an inert gas into the processing chamber, and the like.

  According to this metal filling apparatus, first, in a state where the object to be processed is placed on the holding table, the lower end surface of the housing is pressed against the object to be processed to form a processing chamber, and the decompression mechanism The gas in the processing chamber is exhausted to reduce the pressure in the processing chamber and the minute space formed in the workpiece to a substantially vacuum state. Next, molten metal is supplied to the processing chamber until the amount reaches the amount that can cover the entire surface to be processed without being bounced by the surface to be processed.

  Next, an inert gas for pressurization is supplied into the processing chamber, the molten metal is pressurized by this gas pressure, and the molten metal is filled into the minute space by so-called differential pressure filling. Thereafter, the piston is moved toward the object to be processed, and the piston is pressed against the surface to be processed of the object to be processed. As a result, excess molten metal between the piston and the object to be processed is pushed out from above the object to be processed into the gap between the inner peripheral surface of the housing and the outer peripheral surface of the piston, and formed on the processed object after processing. The thickness of the layer made of surplus metal can be reduced as much as possible.

  And after making it still for a while in the state which pressed the piston against the to-be-processed object, an inert gas is supplied in a processing chamber, and the excess molten metal in a processing chamber is collect | recovered in the collection | recovery part suitably provided in the processing chamber outside. Thereby, when the molten metal is cooled in a subsequent process, it is possible to prevent the occurrence of a problem that the molten metal is cured between the housing and the piston and the lifting / lowering operation of the piston is hindered.

JP 2002-368083 A

  However, in the metal filling apparatus, an inert gas is supplied into the processing chamber, and excess molten metal in the processing chamber is recovered in an appropriate recovery unit provided outside the processing chamber. The molten metal remaining in the processing chamber (hereinafter referred to as “residual metal”) is not lost in the gaps between them and the port leading to the recovery section. Gradually accumulate in the processing chamber.

  This residual metal is oxidized by metal components and coarsened crystal grains, and its melting point is higher than that of ordinary molten metal. When the temperature in the processing chamber is raised to a predetermined temperature (a temperature equal to or higher than the melting point of the molten metal) for processing, the residual metal is melted or softened, and the residual metal having low fluidity is on the surface to be processed. It will be on. Therefore, in this state, when molten metal is supplied into the processing chamber in a subsequent process, residual metal on the surface to be processed is mixed into the molten metal, and the mixed residual metal hinders filling and causes a filling failure.

  The present invention has been made in view of the above circumstances, and prevents the residual metal in the processing chamber from being placed on the object to be processed, thereby suppressing the mixing of the residual metal into the molten metal near the surface to be processed. It is an object of the present invention to provide a metal filling method and a metal filling device used therefor that can fill a molten space in a minute space formed in an object in a state and can suppress the occurrence of filling failure. .

A holding unit for holding a workpiece;
A cylindrical member having an internal space and having one end facing the holding portion;
A pressing member fitted in the inner space of the cylindrical member so as to freely advance and retract,
Using a metal filling apparatus in which an airtight processing chamber is formed by the object to be processed or the holding part held by the holding part, and the cylindrical member and the pressing member,
A metal filling method of filling a molten metal supplied onto the object to be processed in a minute space formed so as to open to the object surface of the object to be processed,
After performing a decompression step of decompressing the processing chamber,
Moving the pressing member to the surface to be processed of the object to be processed held by the holding unit, and performing an abutting step of bringing the pressing member into contact with the surface to be processed of the object to be processed;
Next, a heating step of heating the holding portion, the cylindrical member, and the pressing member is performed ,
Thereafter, in a state where the pressing member is in contact with the surface to be processed, a molten metal supply step of supplying a molten metal into the processing chamber;
Perform a separating step of separating said pressing member from the treatment surface of the object to be processed,
Thereafter, the molten metal supplied to the processing chamber, according to the metal filling method of performing as filling factory to be filled in the micro space.

  According to this metal filling method, first, gas is exhausted from the processing chamber, and the processing chamber is decompressed to a substantially vacuum state. Next, the pressing member is moved toward the surface to be processed of the object to be processed, and the pressing member is brought into contact with the surface to be processed of the object to be processed. Thereafter, the holding portion, the cylindrical member, and the pressing member are heated to raise the temperature in the processing chamber. At this time, it is preferable to raise the temperature so that the temperature in the processing chamber is equal to or higher than the melting point of the molten metal.

  Thus, even if the residual metal in the processing chamber is melted or softened by heating the holding portion, the cylindrical member, and the pressing member in a state where the pressing member is in contact with the surface to be processed, The residual metal can be prevented from being placed on the surface to be processed or spreading to the surface to be processed.

  Next, molten metal is supplied into the processing chamber while the pressing member is in contact with the workpiece. Thereby, the residual metal having a density lower than that of the molten metal due to the oxidation of the metal component rises to the liquid surface of the supplied molten metal. Therefore, mixing of the residual metal into the molten metal near the surface to be processed of the object to be processed is prevented. In addition, when supplying a molten metal in a process chamber, it is preferable to supply a molten metal in a process chamber until the liquid level of a molten metal exceeds the position which supplies a molten metal in a process chamber.

  Next, the pressing member is moved away from the surface to be processed. Thereby, molten metal is supplied between the pressing member and the workpiece. The pressing member may be gradually separated from the surface to be processed after the molten metal starts to be supplied into the processing chamber, or may be separated from the surface to be processed after sufficiently supplying the molten metal into the processing chamber. You may make it let it. Thereafter, the molten metal is filled into a minute space formed in the workpiece. At this time, in the metal filling method according to the present invention, as described above, the residual metal is prevented from being mixed into the molten metal in the vicinity of the surface to be processed of the object to be processed. The molten metal can be filled into the minute space while suppressing the occurrence of filling failure caused by the residual metal mixed in the molten metal.

  As a method of filling the molten metal into the minute space, a pressurized gas is supplied into the processing chamber, the molten metal supplied into the processing chamber is pressurized, and the molten metal is filled into the minute space. In the separation step, the pressing member is separated from the surface to be processed while the molten metal is continuously supplied to the processing chamber, and the processing chamber is completely filled with the molten metal. The pressing member may be moved to the surface to be processed of the processing object, and the molten metal supplied into the processing chamber may be pressurized to fill the minute space with the molten metal.

  In this metal filling method, after the filling process is performed, the pressing member is moved to the surface to be processed of the object to be processed, and an excluding step of removing excess molten metal from the object to be processed is further performed. Is preferred. Thereby, the thickness of the layer which consists of an excess molten metal formed on the to-be-processed object after a process can be made thin.

  Further, in the metal filling method, the molten metal supply step and the separation step are performed simultaneously, and the molten metal is supplied into the processing chamber while gradually moving the pressing member away from the surface to be processed. Anyway. Even if it does in this way, since a residual metal floats on the liquid level of the supplied molten metal, mixing of the residual metal to the molten metal near the surface to be processed of the object to be processed is prevented.

  Furthermore, a molten metal sealing portion is provided on a surface of the pressing member that faces the surface to be processed, and in the pressing step, the pressing member is moved to the surface to be processed of the object to be processed held by the holding portion. Then, the molten metal sealing portion may be brought into contact with the surface to be processed or the holding portion of the object to be processed. In this way, it is possible to more effectively prevent the residual metal that has been melted or softened from spreading on the surface to be treated.

  In addition, when performing an exclusion process in the said metal filling method, after performing the said exclusion process, it is preferable to perform further the removal process which removes the excess molten metal in the said process chamber out of a process chamber. In this way, since the amount of metal remaining in the processing chamber can be reduced as much as possible, mixing of the residual metal into the molten metal when the molten metal is supplied again into the processing chamber can be suppressed.

  In the removal step, pressurized gas may be supplied into the processing chamber, and excess molten metal in the processing chamber may be removed outside the processing chamber, or the pressing member may be moved to the processing surface side of the object to be processed. Further, it may be performed simultaneously with the filling step and the exclusion step.

Moreover, the metal filling apparatus used for the metal filling method is as follows.
A holding unit for holding the object to be processed;
A cylindrical member having an internal space and having one end facing the holding portion;
A pressing member fitted in the internal space of the cylindrical member so as to be freely advanced and retracted;
A pressing mechanism for moving the pressing member forward and backward with respect to the object to be processed held by the holding unit;
A moving mechanism for moving at least one of the holding part and the cylindrical member in a direction approaching and separating from the other;
An airtight processing chamber is formed by the object to be processed or the holding part held by the holding part, and the cylindrical member and the pressing member,
And a decompression mechanism for decompressing the processing chamber;
A heating mechanism for heating the holding part, the cylindrical member and the pressing member;
A molten metal supply mechanism for supplying molten metal into the processing chamber;
A gas supply mechanism for supplying pressurized gas into the processing chamber;
A control device for controlling the operation of the pressing mechanism, the moving mechanism, the decompression mechanism, the molten metal supply mechanism, and the gas supply mechanism;
The controller is
In a state where the object to be processed is placed on the holding unit, the moving mechanism is operated, and the holding unit and the cylindrical member are brought close to each other to form a processing chamber;
After activating the decompression mechanism and performing a process of decompressing the processing chamber,
By the pressing mechanism, the pressing member is moved to the treated surface of the object, it executes a process of abutting the pressing member with the target surface of the object to be processed,
Next, the heating mechanism is operated to perform a process of heating the holding portion, the cylindrical member, and the pressing member,
Thereafter , in a state where the pressing member is in contact with the surface to be processed, the molten metal supply mechanism is operated to supply the molten metal into the processing chamber;
By the pressing mechanism, the pressing member and a process of separating from the processed surface of the object to be processed,
Thereafter, the gas supply mechanism is operated, and the pressurized gas supplied into the processing chamber, the processing pressurizing the supplied molten metal chamber, perform the processing of filling the molten metal into the minute space To do.

  According to this metal filling apparatus, first, at least one of the holding portion and the cylindrical member is moved by the moving mechanism so that both are separated from each other, and then the object to be processed is pressed against the pressing member. Hold in the holding part so as to face each other. Next, the holding part and the cylindrical member are brought close to each other by a moving mechanism, and one end of the cylindrical member is pressed against and closely attached to the object to be processed or the holding part held by the holding part. And an airtight processing chamber surrounded by the cylindrical member and the pressing member.

  Next, the pressure reducing mechanism is operated to exhaust the gas in the processing chamber, the pressure in the processing chamber is reduced, and then the pressing member is moved to the processing surface side of the workpiece by the pressing mechanism, and the pressing member is processed. Make contact with the surface. In this state, even if the heating mechanism is operated to heat the holding portion, the cylindrical member, and the pressing member, and the residual metal in the processing chamber is melted or softened, the residual metal is placed on the workpiece. In addition, the temperature in the processing chamber is raised to a predetermined temperature while preventing the surface from being spread on the surface to be processed. In addition, it is preferable that the temperature in the processing chamber after the temperature rise is equal to or higher than the melting point of the molten metal.

  Next, in a state where the pressing member is in contact with the surface to be processed, the molten metal supply mechanism is operated to supply the molten metal into the processing chamber. Thereby, the molten metal is supplied into the processing chamber in a state where the residual metal is floated in the molten metal.

  Next, the pressing mechanism is operated to move the pressing member away from the surface to be processed. Thereby, a clearance gap is formed between a to-be-processed object and a pressing member, and a molten metal flows into the said clearance gap, and a molten metal is supplied on a to-be-processed surface. Thereafter, the molten metal is filled into the minute space by supplying the pressurized gas into the processing chamber by the gas supply mechanism. Note that generation of voids is reduced by supplying molten metal into the processing chamber after the processing chamber is decompressed.

  As described above, in this metal filling apparatus, residual metal is placed on the surface to be processed or the residual metal is prevented from spreading on the surface to be processed, and the residual metal is floated on the liquid surface of the molten metal. In this state, the molten metal is supplied onto the surface to be processed, so that the residual metal is prevented from being mixed into the molten metal in the vicinity of the surface to be processed, and the occurrence of filling defects due to the residual metal is suppressed.

  In the metal filling apparatus, after performing the process of filling the molten metal, the pressing mechanism is operated, the pressing member is moved to the processing surface side of the workpiece, and the pressing member is moved to the workpiece. You may make it perform the process which presses and removes an excess molten metal from on a to-be-processed object. By doing in this way, the clearance gap between a to-be-processed object and a pressing member is narrowed, and the excess molten metal on a to-be-processed object is extruded from the said clearance gap. Therefore, the layer made of excess metal formed on the treated surface after processing can be made to the minimum thickness.

  In this metal filling apparatus, the process of supplying the molten metal into the processing chamber and the process of separating the pressing member from the surface to be processed are simultaneously performed, and the pressing member is covered by the pressing mechanism. The molten metal supply mechanism may be operated while gradually moving away from the surface to be processed of the processing object to supply the molten metal into the processing chamber. Also in this case, since the residual metal floats in the supplied molten metal, the residual metal is prevented from being mixed into the molten metal in the vicinity of the surface to be processed of the object to be processed.

  Further, in this metal filling device, when executing the process of removing the excess molten metal from the workpiece, the control device executes the process of removing the excess molten metal from the workpiece, It is preferable to further execute a process of operating the gas supply mechanism to supply pressurized gas into the processing chamber and removing excess molten metal in the processing chamber outside the processing chamber. In this way, the amount of molten metal remaining in the processing chamber can be reduced as much as possible.

Moreover, the metal filling apparatus used for the metal filling method is as follows.
A holding unit for holding the object to be processed;
A cylindrical member having an internal space and having one end facing the holding portion;
A pressing member fitted in the internal space of the cylindrical member so as to be freely advanced and retracted;
A pressing mechanism for moving the pressing member forward and backward with respect to the object to be processed held by the holding unit;
A moving mechanism for moving at least one of the holding part and the cylindrical member in a direction approaching and separating from the other;
An airtight processing chamber is formed by the object to be processed or the holding part held by the holding part, and the cylindrical member and the pressing member,
And a decompression mechanism for decompressing the processing chamber;
A heating mechanism for heating the holding part, the cylindrical member and the pressing member;
A molten metal supply mechanism for supplying molten metal into the processing chamber;
A control device for controlling the operation of the pressing mechanism, the moving mechanism, the pressure reducing mechanism and the molten metal supply mechanism,
The controller is
In a state where the object to be processed is placed on the holding unit, the moving mechanism is operated, and the holding unit and the cylindrical member are brought close to each other to form a processing chamber;
After activating the decompression mechanism and performing a process of decompressing the processing chamber,
By the pressing mechanism, the pressing member is moved to the treated surface of the object, it executes a process of abutting the pressing member with the target surface of the object to be processed,
Next, the heating mechanism is operated to perform a process of heating the holding portion, the cylindrical member, and the pressing member,
Thereafter, in a state where the pressing member is in contact with the surface to be processed, the molten metal supply mechanism is operated to supply the molten metal into the processing chamber;
Under continuous supply of molten metal into the processing chamber, by said pressing mechanism, said pressing member is moved away from the target surface of the object to be processed, and executes the fully fill processing the processing chamber with molten metal ,
Thereafter, the pressing member brings the pressing member closer to the processing surface of the object to be processed, presses the molten metal supplied into the processing chamber, fills the minute space with the molten metal, and the object to be processed. it may be performed a processing of eliminating the molten metal from above.

  In this case, similarly to the above, first, the processing chamber is formed after holding the workpiece on the holding table, and the processing chamber is decompressed. Next, after the pressing member is brought into contact with the object to be processed, the holding portion, the cylindrical member, and the pressing member are heated to raise the temperature in the processing chamber to a predetermined temperature, and then the pressing member is moved to the object to be processed. Molten metal is supplied into the processing chamber while being in contact with the surface to be processed.

  Next, in this metal filling apparatus, while the molten metal is continuously supplied into the processing chamber, the pressing member is separated from the object to be processed by the pressing mechanism, and the processing chamber is completely filled with the molten metal. Molten metal is supplied into the processing chamber. Thereby, a molten metal is not bounced on a to-be-processed object, but a molten metal can be spread uniformly on a to-be-processed object.

  Thereafter, the pressing member is moved closer to the object to be processed by the pressing mechanism. At this time, in this metal filling apparatus, since the processing chamber is completely filled with molten metal, the molten metal in the processing chamber is pressurized by bringing the pressing member closer to the object to be processed, The molten metal is filled in the minute space, and excess molten metal is excluded from between the pressing member and the object to be processed.

  Thus, according to the metal filling device, since the temperature of the processing chamber is raised after the pressing member is brought into contact with the surface to be processed, even if the residual metal in the processing chamber is melted or softened, This molten or softened residual metal can be prevented from being placed on the object to be processed or spreading on the surface to be processed. In addition, the supply of the molten metal into the processing chamber is started in a state where the pressing member is in contact with the surface to be processed, and the pressing member is removed from the object to be processed while the supply of the molten metal into the processing chamber is continued. Since it is made to separate, the molten metal can be supplied onto the object to be processed while the residual metal is floated in the molten metal, and the residual metal can be prevented from being mixed into the molten metal near the surface to be processed. It is possible to suppress the occurrence of poor filling due to the above.

  In the metal filling apparatus, the process of supplying the molten metal into the processing chamber and the process of completely filling the processing chamber with the molten metal are simultaneously performed, and the pressing member is used to cover the object to be processed. The molten metal may be supplied into the processing chamber so that the processing chamber is completely filled with the molten metal by operating the molten metal supply mechanism while gradually separating from the processing surface. Even in this case, the molten metal can be uniformly spread on the object to be processed, and the molten metal can be supplied onto the object to be processed while the residual metal is floated in the molten metal. Play.

  In this metal filling device, the pressing member moves the pressing member closer to the object to be processed, so that the molten metal is filled into the minute space, and excess molten metal is inserted between the pressing member and the object to be processed. It is preferable to perform a process of removing, but at the same time as this process, a process of removing excess molten metal from the processing chamber to the outside of the processing chamber is preferably performed. The amount of molten metal to be reduced can be reduced.

  Further, these metal filling devices are provided with a molten metal sealing portion on a surface of the pressing member that faces the surface to be processed, and in the process of pressing the pressing member against the surface to be processed, the molten metal sealing portion. May be brought into contact with the surface to be processed. In this way, it is possible to more effectively prevent the residual metal that has been melted or softened from spreading on the surface to be treated.

  As described above, according to the metal filling method and the metal filling apparatus according to the present invention, when the molten metal is filled in the minute space formed in the workpiece, the metal remaining in the processing chamber is covered. It is possible to fill the minute space with the molten metal in a state where it is effectively prevented from being placed on the processing object or spreading on the surface to be processed, and it is possible to effectively prevent the filling failure.

It is sectional drawing which showed schematic structure of the metal filling apparatus which concerns on one Embodiment of this invention. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus of the said embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus of the said embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus of the said embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus of the said embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus of the said embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus of the said embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus of the said embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus of the said embodiment. It is the figure which showed the timing chart at the time of performing a metal filling process with the metal filling apparatus of embodiment. (A) is sectional drawing which shows the structural example which provides a molten metal sealing part in a piston, (b) is sectional drawing which shows a mode when the piston of (a) is dropped toward a semiconductor wafer. It is. (A) is sectional drawing which shows the further structural example which provides a molten metal sealing part in a piston, (b) shows a mode when the piston of (a) is dropped toward a semiconductor wafer. It is sectional drawing. (A) is sectional drawing which shows the further structural example of the molten metal sealing part provided in a piston, (b) is a cross section which shows a mode when the piston of (a) is dropped toward a semiconductor wafer. FIG. (A) is sectional drawing which shows the further structural example of the molten metal sealing part provided in a piston, (b) is a cross section which shows a mode when the piston of (a) is dropped toward a semiconductor wafer. FIG. (A) is sectional drawing which shows the further structural example of the molten metal sealing part provided in a piston, (b) is a cross section which shows a mode when the piston of (a) is dropped toward a semiconductor wafer. FIG. It is the enlarged view which showed schematic structure of the metal filling apparatus which concerns on other embodiment of this invention. It is sectional drawing of arrow AA in FIG. It is sectional drawing which showed schematic structure of the metal filling apparatus which concerns on other embodiment of this invention. It is the figure which showed the timing chart at the time of performing a metal filling process with the metal filling apparatus which concerns on other embodiment. It is sectional drawing which showed schematic structure of the metal filling apparatus which concerns on other embodiment of this invention. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus which concerns on other embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus which concerns on other embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus which concerns on other embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus which concerns on other embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus which concerns on other embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus which concerns on other embodiment. It is explanatory drawing which shows the operation | movement flow of the metal filling apparatus which concerns on other embodiment. It is the figure which showed the timing chart at the time of performing a metal filling process with the metal filling apparatus which concerns on other embodiment. It is sectional drawing which showed schematic structure of the metal filling apparatus which concerns on other embodiment of this invention. It is the figure which showed the timing chart at the time of performing a metal filling process with the metal filling apparatus which concerns on other embodiment.

  Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings.

[Configuration of metal filling equipment]
As shown in FIG. 1, the metal filling apparatus 1 of this example is a metal filling apparatus that fills a molten space with a minute space formed so as to open on a processing surface of a semiconductor wafer (processing object) K. And a holding table H on which the semiconductor wafer K is held with the surface to be processed facing upward, and a cylindrical shape in which a space is formed inside and a lower end surface is disposed to face the holding table H. Housing C, a piston P as a pressing member provided so as to be able to advance and retreat with respect to the processing surface of the semiconductor wafer K held by the holding table H, and raising and lowering the holding table H close to and away from the housing C A mechanism 10 and a pressing mechanism 3 for moving the piston P back and forth are provided, and an airtight processing chamber 2 is formed by the semiconductor wafer K, the housing C, and the piston P held by the holding table H.

  In addition, the metal filling apparatus 1 is configured to exhaust a gas in the processing chamber 2 to decompress the processing chamber 2, and a heating mechanism 6 to heat the holding table H, the housing C, and the piston P. A molten metal supply mechanism 7 for supplying a molten metal M into the processing chamber 2, a gas supply mechanism 8 for supplying an inert gas into the processing chamber 2, and a molten metal M supplied into the processing chamber 2 A molten metal recovery mechanism 9 to be recovered, and a control device 11 that controls operations of the elevating mechanism 10, the pressing mechanism 3, the decompression mechanism 5, the heating mechanism 6, the molten metal supply mechanism 7, the gas supply mechanism 8, and the molten metal recovery mechanism 9. And.

  The holding table H is moved up and down by the lifting mechanism 10. The holding table H is raised toward the housing C, and the surface to be processed of the semiconductor wafer K held on the upper surface of the holding table H is accommodated in the housing. An airtight process chamber 2 is formed by pressing and contacting the lower end surface of C. The lifting mechanism 10 is composed of a torque motor or the like, and its operation is controlled by the control device 11.

  The piston P is inserted from the upper opening of the housing C, and is advanced and retracted in the axial direction by the pressing mechanism 3. Between the outer peripheral surface of the piston P and the inner peripheral surface of the housing C, The O-ring 12 is interposed, and the O-ring 12 is sealed between the two. Also, a bellows seal 13 is provided between the flange portion of the piston P and the upper end surface of the housing C, and the airtightness between the piston P and the housing C is further enhanced by the bellows seal 13. Yes.

  The piston P is provided with a pressing portion 4 made of stainless steel 440C having heat resistance (or stainless steel 304) on the side facing the holding table H. Stainless steel is excellent as a material for the pressing portion 4 in that its surface state is stable even when used under a high temperature environment and it has sufficient hardness. The piston P is preferably provided with a molten metal sealing part as appropriate.

  Then, at least a region in contact with the molten metal M in the surface of the pressing portion 4 is subjected to mirror finishing by electrolytic polishing. As a result of such mirror processing, the pressing portion in the prototype metal filling apparatus 1 is manufactured. The surface roughness of No. 4 is 0.3 μm or less in terms of 10-point average roughness (Rz), 0.5 μm or less in terms of maximum height (Ry), and 10 μm or more in terms of uneven average distance (Sm). As described above, if the surface roughness (ten-point average roughness) of the pressing portion 4 is set to 0.3 μm or less and the metal surface of the pressing portion 4 is made smooth, the molten metal M adheres to the pressing portion 4 side. Therefore, even when the pressing portion 4 is pulled away from the semiconductor wafer K, the molten metal M that has been cooled and hardened is easily peeled off from the metal surface of the pressing portion 4 to cause a filling failure or a crack in the semiconductor wafer K. Can be effectively avoided, and the residual metal M2 can be prevented from adhering to the pressed portion 4 after processing. In this application, the term “surface roughness” refers to the JIS standard 10-point average roughness.

  Furthermore, the surface of the pressing portion 4 is subjected to DLC film treatment (mold release treatment). Even if the pressing portion 4 is pressed against the molten metal M with a strong force, the molten metal M is cured. It is easily peeled off from the pressing part 4.

  In addition, as a mold release process, a CrN coating process, a TiN coating process, a surf process, etc. other than a DLC process can be used suitably. Further, as described above, the pressing portion 4 is made of stainless steel and has sufficient hardness. In the prototype metal filling device 1, the mirror surface processing and the mold release processing are performed in the state. Micro Vickers hardness (Hv) was greater than 1200.

  In addition, the metal pressing portion 4 is relatively hardly deformed by heating and pressing, and has sufficient hardness as described above, so that the coating process applied to the surface is difficult to drop, and the effect of the coating process is reduced. Can extend the service life.

  The pressing mechanism 3 is a so-called hydraulic cylinder mechanism that applies a driving force for moving the piston P forward and backward, and can press the pressing portion 4 of the piston P against the semiconductor wafer K with a predetermined pressing force. Although not shown, the pressing mechanism 3 is connected to pipes for supplying pressure oil to the upper hydraulic chamber in the figure and the lower hydraulic chamber in the figure. Is provided with a switching valve controlled by the control device 11, and when pressure oil is supplied to the upper hydraulic chamber, the piston P moves downward and pressure oil is supplied to the lower hydraulic chamber. Then, the piston P moves upward.

  The decompression mechanism 5 includes a vacuum pump 5a connected to the processing chamber 2 by a pipe 15 provided through a side wall on the upper end side of the housing C, and the vacuum pump 5a between the piping 15 and the vacuum pump 5a. This mechanism comprises a control valve 5b provided, and exhausts the air in the processing chamber 2 by the vacuum pump 5a to depressurize the processing chamber 2. The operation of the vacuum pump 5a and the opening / closing of the control valve 5b are controlled by the control device 11.

  The heating mechanism 6 is a device that can individually heat the holding table H, the housing C, and the piston P. For example, a heater built in each of the holding table H, the housing C, and the piston P is provided. It can be illustrated.

  The molten metal supply mechanism 7 includes a molten metal supply part 7a connected to the processing chamber 2 by a pipe 16 penetrating the side wall on the lower end side of the housing C, and the molten metal supply part 7a of the pipe 16 and the processing. And a control valve 7b provided between the chamber 2 and a mechanism for supplying the molten metal M from the molten metal supply section 7a into the processing chamber 2 with a predetermined supply pressure. Opening and closing is controlled by the control device 11.

  In the molten metal supply part 7a, the molten metal M used for metal filling is heated at a temperature higher than its melting point and stored in a liquid state. The molten metal M used for filling the metal in this example is a lead-free solder having a melting point of about 200 ° C., and a metal having a relatively low melting point such as solder is excellent in that it is easy to handle, The type of the metal M is not limited to solder, and depending on the purpose of filling the minute space and its function, Au, Ag, Cu, Pt, Pd, Ir, Al, Ni, Sn, In, Bi, Zn Arbitrary things, such as these and these alloys, are employable.

  The gas supply mechanism 8 includes a gas supply part 8a connected to the pipes 15 and 16 by a pipe 17, a control valve 8b provided between the pipe 15 and the gas supply part 8a of the pipe 17, A mechanism comprising a control valve 8c provided between the pipe 16 and the gas supply part 8a, and supplying an inert gas from the gas supply part 8a into the processing chamber 2 via the pipe 15, the pipe 16 and the pipe 17 It is. The operation of the gas supply unit 8a and the opening and closing of the two control valves 8b and 8c are controlled by the control device 11.

  The molten metal recovery mechanism 9 includes a molten metal recovery part 9a connected to the processing chamber 2 by a pipe 18 penetrating the side wall on the lower end side of the housing C, and a molten metal recovery part 9a of the pipe 18. And a control valve 9b provided between the processing chamber 2 and a mechanism for recovering the molten metal M in the processing chamber 2. The control valve 9b is controlled by the control device 11 to open and close. In addition, as the molten metal collection | recovery part 9a, the structure which consists of a collection tank and the exhaust apparatus connected to this collection tank can be illustrated.

[Metal filling procedure]
Next, with reference to FIGS. 2-9, the metal filling procedure in the metal filling apparatus 1 of this example is demonstrated in detail.

  According to the metal filling device 1 of this example, first, after the operation of the lifting mechanism 10 is controlled by the control device 11 and the holding table H is lowered, the upper surface of the holding table H is separated from the lower end surface of the housing C. The semiconductor wafer K is held on the holding table H with the surface to be processed facing up. Next, the control device 11 controls the operation of the lifting mechanism 10 to raise the holding table H toward the housing C, and press the surface of the semiconductor wafer held on the upper surface of the holding table H against the lower end surface of the housing C. As a result, the processing chamber 2 is formed in a state where the semiconductor wafer K is pressed onto the holding table H by the housing C.

  After that, as shown in FIG. 2, the vacuum pump 5 a is operated under the control of the control device 11, the control valve 5 b of the pipe 15 is opened, the gas in the processing chamber 2 is exhausted, and the processing chamber 2 The inside and the minute space formed in the semiconductor wafer K are depressurized to a substantially vacuum state.

  Next, as shown in FIG. 3, the pressure reduction by the vacuum pump 5a is continued, and the pressing mechanism 3 is operated under the control of the control device 11 while the inside of the processing chamber 2 is kept in a substantially vacuum state. The piston P is brought close to the semiconductor wafer K, and the surface of the pressing portion 4 is brought into contact with the surface to be processed of the semiconductor wafer K. The surface of the pressing portion 4 is preferably brought into contact with the surface to be processed of the semiconductor wafer K, but may be pressed against the surface to be processed with a predetermined pressing force. Thereafter, the control device 11 operates the heating mechanism 6 to heat the holding base H, the housing C, and the piston P, and the temperature in the processing chamber 2 is equal to or higher than the melting point of the molten metal M (about 220 in this example). Temperature). Thus, since the temperature of the processing chamber 2 is raised after the surface of the pressing portion 4 is brought into contact with the surface to be processed of the semiconductor wafer K, the residual metal M2 in the processing chamber 2 is melted or softened. Even so, the residual metal M2 is prevented from being placed on the semiconductor wafer K, or the residual metal M2 is prevented from spreading on the surface to be processed. The residual metal M2 is a molten metal remaining between the outer peripheral surface of the piston P and the inner peripheral surface of the housing C by repeatedly performing the metal filling process. The coarsening has occurred, the melting point is higher than that of a normal molten metal, and the density is low.

  Next, as shown in FIG. 4, the inside of the processing chamber 2 heated to a temperature equal to or higher than the melting point of the molten metal M is maintained in a substantially vacuum state, and the surface of the pressing portion 4 is brought into contact with the surface to be processed of the semiconductor wafer K. The control valve 11 of the pipe 16 is opened by the control device 11 in the state in which the liquid molten metal M heated to the melting point or higher (about 250 ° C. in this example) is supplied from the molten metal supply portion 7a to the processing chamber 2. Supply inside. As a result, the residual metal M2 having a density lower than that of the molten metal M floats on the liquid surface of the supplied molten metal M or is forced to flow into the pipe 18 by the supplied molten metal M. In addition, it is preferable to supply until the position of the liquid level of the molten metal M in the processing chamber 2 exceeds the opening of the pipe 16.

  In this metal filling apparatus 1, the pipe 15 is provided penetrating the upper end side of the housing C, that is, the pipe 15 is provided sufficiently above the liquid surface of the molten metal M to be supplied, so that a vacuum is provided. Although it is possible to supply the molten metal M into the processing chamber 2 in a state where the pressure reduction by the pump 5a is continued, it is appropriate so that the molten metal M is not sucked into the vacuum pump 5a. It is preferable to stop the supply of the molten metal M at a proper timing. Further, as described above, since the semiconductor wafer K is pressed against the holding table H, for example, solder (specific gravity: about 9.0) is supplied onto the semiconductor wafer K made of silicon (specific gravity: 2.5). Even so, the semiconductor wafer K is prevented from floating from the holding table H.

  Then, when a predetermined amount of molten metal M is supplied into the processing chamber 2, the piston P is moved by operating the pressing mechanism 3 under the control of the control device 11 while supplying the molten metal M into the processing chamber 2. Until the surface of the pressing portion 4 is separated from the surface to be processed of the semiconductor wafer K and reaches the amount that can cover the entire surface to be processed of the semiconductor wafer K without being repelled by the surface to be processed of the semiconductor wafer K. Molten metal M is supplied between the pressing unit 4 and the semiconductor wafer K (see FIG. 5). At this time, it is preferable to maintain a state in which the surface of the pressing portion 4 is immersed in the liquid surface of the molten metal M.

  Thereafter, after the control valve 7b of the pipe 16 is closed by the control device 11, the control valve 5b of the pipe 15 is closed and the operation of the vacuum pump 5a is stopped to stop the pressure reduction.

  Then, under the control of the control device 11, the control valve 8b of the pipe 17 is opened and the gas supply unit 8a is operated, so that nitrogen gas for pressurization or the like is supplied from the gas supply unit 8a into the processing chamber 2 at a predetermined pressure. (In this example, about 0.5 MPa) is supplied (see FIG. 6). As a result, the molten metal M is pressurized by a gas pressure such as nitrogen gas supplied into the processing chamber 2, and the molten metal M is filled into the minute space by so-called differential pressure filling.

  Thereafter, the pressing mechanism 3 is operated by the control device 11 to move the piston P toward the semiconductor wafer K and press the pressing portion 4 against the surface to be processed of the semiconductor wafer K (see FIG. 7). As a result, excess molten metal between the pressing portion 4 and the semiconductor wafer K is pushed out from the semiconductor wafer K into the gap between the inner peripheral surface of the housing C and the outer peripheral surface of the piston P. Therefore, the amount of residue formed on the processed surface of the semiconductor wafer K is reduced. The residue refers to a layered unnecessary metal portion that is formed by hardening on the semiconductor wafer K the excess molten metal that could not fit in the minute space on the semiconductor wafer K. However, there is a case where it can be used as a wiring layer or a contact layer.

  Then, with the pressing portion 4 pressed against the surface to be processed of the semiconductor wafer K, the piston P is stopped for a while. In the metal filling device 1 of this example, as described above, the amount of the molten metal M corresponding to the pressing portion 4 being pressed into the liquid of the molten metal M is the outer peripheral surface of the piston P and the inner periphery of the housing C. Since it moves to the gap between the surfaces, the liquid level of the molten metal M rises. As a result, the semiconductor wafer K is immersed in the molten metal M at a position deep from the liquid level of the molten metal M. Therefore, the pressing part 4 and the semiconductor wafer K come into contact with each other, and due to the poor wettability between the molten metal M and the semiconductor wafer K and the pressing part 4, the force by which the molten metal M is repelled on the surface to be processed of the semiconductor wafer K is increased. Even so, it is difficult for the molten metal M to be cut off on the surface to be processed of the semiconductor wafer K.

  Note that it is preferable to continue the gas pressurization by the gas supply mechanism 8 while the pressing portion 4 is pressed against the surface to be processed of the semiconductor wafer K. By doing in this way, while filling force is maintained, the film | membrane breakage mentioned above can be prevented more effectively.

  Next, as shown in FIG. 8, with the pressing unit 4 pressed against the surface to be processed of the semiconductor wafer K, the control device 11 opens the control valve 8 c of the pipe 17 and opens the control valve 9 b of the pipe 18. The excess molten metal M1 that cannot be filled in the minute space of the semiconductor wafer K is recovered to the molten metal recovery unit 8a. If the surplus molten metal M1 is not recovered, after the cooling described later, the surplus molten metal M1 is cured between the piston P and the housing C to prevent the piston P from moving back and forth, or the semiconductor wafer K and the processing chamber 2 There arises a problem that the inner wall surface is fixed, and a large amount of metal remains in the processing chamber 2. However, if a gas enters between the pressing unit 4 and the semiconductor wafer K, a filling defect occurs. Therefore, the excess molten metal M1 is not completely removed from the processing chamber 2, and the outer peripheral surface of the pressing unit 4 and the housing It is preferable to leave the molten metal M in the gap between the inner peripheral surface of C. Note that the amount of the molten metal M remaining in the gap is about several mm depending on the wettability between the semiconductor wafer K and the pressing portion 4 and the molten metal M and the size of the gap. It is preferable that it is a quantity.

  And after collect | recovering the surplus molten metal M1, while controlling the control valve 8c of the piping 17 and the control valve 9b of the piping 18 under control by the control apparatus 11, while the heating by the heating mechanism 6 is stopped, the temperature of the molten metal M is changed. It cools until it becomes below melting | fusing point, and waits until the molten metal M with which the minute space of the semiconductor wafer K was filled is cooled and hardened. Thereafter, under the control of the control device 11, the control valve 8b of the pipe 17 is closed to stop the gas supply.

  Thereafter, as shown in FIG. 9, under the control of the control device 11, the pressing mechanism 3 is operated to raise the piston P, and the lifting mechanism 10 is further operated to lower the holding table H, thereby processing. Chamber 2 is opened. Then, the semiconductor wafer K that has been subjected to the metal filling process is taken out and replaced with a new semiconductor wafer K to be subjected to the metal filling process, and the procedure shown in FIGS. 2 to 9 is repeated to perform the metal filling process on the semiconductor wafer K. To go.

  In addition, the operation of the heating mechanism 6, the opening and closing of the control valves 5b, 7b, 8b, 8c, and 9b, the operation of the pressing mechanism 3, and the operation of the lifting mechanism 10 when the metal filling apparatus 1 performs the above-described series of metal filling processes. FIG. 10 shows an example of a timing chart regarding the above.

[Mode of molten metal sealing part]
Next, in the metal filling apparatus 1, a mode in which a molten metal sealing portion for confining the molten metal M supplied into the processing chamber 2 between the pressing portion 4 and the semiconductor wafer K is provided as shown in FIGS. This will be described with reference to FIG. In addition, in FIGS. 11-15, illustration was abbreviate | omitted about the detailed structure of the thick part which attached the oblique line.

  First, as a first aspect, as shown in FIG. 11A, a molten metal sealing portion having a ring shape made of an elastic body along the outer periphery of a circular semiconductor wafer K on the lower surface of the pressing portion 4. There is an aspect in which 20 is provided.

  According to this configuration, the pressing portion 4 is brought close to the semiconductor wafer K, and the molten metal sealing portion 20 is brought into contact with the surface to be processed of the semiconductor wafer K (see FIG. 3). Since the inner region and the outer region are separated by the molten metal sealing portion 20, when the temperature in the processing chamber 2 is increased, the residual metal M2 is placed on the semiconductor wafer K or spreads on the surface to be processed. Can be prevented more effectively. Further, when the pressing unit 4 is brought close to the semiconductor wafer K (see FIG. 7), the excessive melting metal M1 escapes from between the pressing unit 4 and the semiconductor wafer K and becomes a residue on the semiconductor wafer K. While the amount of the metal M1 is sufficiently reduced, the molten metal M necessary for filling can be confined on the surface to be processed. That is, until the molten metal sealing portion 20 comes into contact with the semiconductor wafer K, the molten metal M in the inner region of the molten metal sealing portion 20 escapes to the outside of the region. When 20 is pressed against the surface to be processed of the semiconductor wafer K, the molten metal M is confined in the inner region of the molten metal sealing portion 20 (see FIG. 11B).

  In addition, it is preferable that the molten metal sealing part 20 consists of an elastic body. By doing in this way, when the pressing part 4 is pressed against the semiconductor wafer K, the molten metal sealing part 20 is deformed and the sealing area is narrowed, so that the pressing mechanism is applied to the molten metal M in the sealing area. A high pressure can be efficiently applied using the thrust No. 3, and the molten metal M can be filled in the minute space without any gap.

  And when this molten metal sealing part 20 is provided, in the said metal filling apparatus 1, the pressurization by gas and the pressurization by the pressing part 4 are performed in two steps, and the molten metal M is formed in the semiconductor wafer K. It can be filled in a minute space. Specifically, first, as described above, pressurization with gas is performed. At this time, the gas pressure is set to a light pressure (for example, 0.2 MPa or less) such that the molten metal M does not break the film in the gap between the semiconductor wafer K and the pressing portion 4. Next, by pressing the pressing portion 4 against the semiconductor wafer K, a metal filling process can be performed by applying high pressure to the entire molten metal M on the processing target surface of the semiconductor wafer K inside the molten metal sealing portion 20. it can. In this way, by performing the metal filling process by two-stage pressurization, the pressure in the processing chamber 2 can be kept low, and the pressure resistance performance need not be extremely high.

  Furthermore, by providing the molten metal sealing part 20 in the pressing part 4, in the process of removing the molten metal to the outside of the processing chamber 2, the excess molten metal M1 outside the sealing region is removed by using gas blow or liquid rinsing. Even if it does, since the filling property of the micro space in the sealing region is not affected, the excess molten metal M1 can be more effectively removed to the outside of the processing chamber 2 and recovered. That is, when the molten metal sealing part 20 is provided in the pressing part 4, even if all the excess molten metal M1 is discharged, gas does not enter between the pressing part 4 and the semiconductor wafer K, and the filling is poor. Therefore, the excess molten metal M1 can be removed and recovered outside the processing chamber 2 without intentionally leaving the excess molten metal M1.

  As a second mode, as shown in FIG. 12A, a melting made of an elastic body concentrically with the semiconductor wafer K at a position facing the holding table H outside the semiconductor wafer K on the lower surface of the pressing portion 4. There exists an aspect which provides the metal sealing part 21. FIG. In this case, the processing chamber 2 in the metal filling apparatus 1 is formed by the holding base H, the housing C, and the piston P.

  If comprised in this way, the molten metal sealing part 21 can perform the filling process of the molten metal M in the whole surface of the semiconductor wafer K, without contacting the semiconductor wafer K (refer FIG.12 (b)). Similarly to the first aspect, when the temperature in the processing chamber 2 is raised, it is possible to more reliably prevent the residual metal M2 from being placed on the semiconductor wafer K or spreading on the surface to be processed.

  The material for forming the molten metal sealing portions 20 and 21 is not particularly limited as long as the material has a certain degree of elasticity and heat resistance and is suitable for sealing the molten metal M. However, by adopting a material or structure that allows the molten metal M before sealing to easily escape to the outside of the sealing region, the amount of the molten metal M to be sealed is made the minimum necessary amount on the semiconductor wafer K. The residue can be thinned more effectively.

  As shown in FIG. 13A, as a third mode, there is a mode in which an elastic body layer 22 as a molten metal sealing unit is laminated on the opposite side of the surface of the pressing unit 4 facing the semiconductor wafer K. In this case, even if the parallelism between the surface of the pressing portion 4 and the surface to be processed of the semiconductor wafer K is poor, the elastic layer 22 is deformed to cause adhesion between the surface of the pressing portion 4 and the surface to be processed of the semiconductor wafer K. Therefore, when the temperature in the processing chamber 2 is raised, it is possible to more effectively prevent the residual metal M2 from being placed on or spread over the surface to be processed of the semiconductor wafer K.

  In addition, when the piston P is moved toward the semiconductor wafer K by the pressing mechanism 3 and the pressing portion 4 is brought close to the semiconductor wafer K, the elastic layer is formed as shown in FIG. 22 spreads in a direction perpendicular to the pressing direction, and the expanded elastic body layer 22 is pressed against the housing C. Thereby, since the molten metal M is confined in the space sealed with the elastic body layer 22, the pressure of the molten metal M pressurized by the gas can be maintained.

  As a 4th aspect, as shown to Fig.14 (a), the elastic body layer 23 as a molten metal sealing part is laminated | stacked on the reverse side of the surface facing the semiconductor wafer K of the pressing part 4, and also, There is a mode in which a ring-shaped molten metal sealing portion 24 made of an elastic body is provided on the lower surface of the pressing portion 4 along the outer periphery of the semiconductor wafer K. If it does in this way, like the 1st mode, the inner region and the outer region of this molten metal sealing part 24 will be separated by molten metal sealing part 24, and also like the 3rd mode. In addition, since the elastic body layer 23 is deformed, the adhesion between the surface of the pressing portion 4 and the surface to be processed of the semiconductor wafer K can be improved, so that the residual metal M2 is placed on the semiconductor wafer K or the surface to be processed. Spreading upward can be prevented more effectively.

  Even in this case, until the molten metal sealing portion 24 comes into contact with the semiconductor wafer K, the molten metal M in the inner region of the molten metal sealing portion 24 escapes to the outside of the region. When the molten metal sealing portion 24 is pressed against the surface to be processed of the semiconductor wafer K, the molten metal M is confined in the inner region of the molten metal sealing portion 24 (see FIG. 14B). While sufficiently reducing the amount of surplus molten metal M1 that becomes a residue above, the molten metal M necessary for filling can be confined on the surface to be treated, and without leaving the surplus molten metal M1 intentionally, It can be removed outside the processing chamber 2 and collected.

  As a 5th aspect, as shown to Fig.15 (a), the aspect which provides the elastic body layer 25 as a molten metal sealing part so that the surface other than the surface which opposes the semiconductor wafer K of the pressing part 4 may be surrounded. is there. Even in this case, the pressing mechanism 3 moves the piston P toward the semiconductor wafer K so that the elastic body layer 25 is brought into contact with the surface of the semiconductor wafer K. Since the outer region is separated by the elastic layer 25, the molten or softened residual metal M2 can be effectively prevented from being placed on the semiconductor wafer K or spreading on the surface to be processed. Further, in this case as well, while sufficiently reducing the amount of the excess molten metal M1 that escapes from the gap between the pressing portion 4 and the semiconductor wafer K and becomes a residue on the semiconductor wafer K, The molten metal M necessary for filling can be confined on the surface to be processed.

  Thus, by providing the molten metal sealing portion for confining between the pressing portion 4 and the semiconductor wafer K, the residual metal M2 is prevented from being placed on the semiconductor wafer K or spreading on the surface to be processed. In addition, the molten metal M can be filled in the minute space by applying an appropriate pressure to the molten metal M. Moreover, the excess molten metal M1 which becomes a residue on the semiconductor wafer K can be reduced.

  As described above, according to the metal filling apparatus 1 and the metal filling method of this example, the temperature of the processing chamber 2 is increased after the surface of the pressing portion 4 is brought into contact with the surface to be processed of the semiconductor wafer K. Therefore, by raising the temperature in the processing chamber 2, even if the residual metal M2 in the processing chamber 2 is melted or softened, the residual metal M2 is prevented from being placed or spread on the surface to be processed. Can do. Further, the molten metal M is supplied into the processing chamber 2 with the surface of the pressing portion 4 in contact with the surface to be processed of the semiconductor wafer K, and the liquid of the molten metal M supplied with the residual metal M2 in the processing chamber 2 is supplied. After floating on the surface, the surface of the pressing portion 4 is separated from the surface to be processed of the semiconductor wafer K, and the molten metal M is supplied onto the surface to be processed. It is possible to prevent the residual metal M2 from being mixed in, and to suppress the occurrence of defective filling due to the residual metal M2, and to fill the molten metal M into the minute space.

  As mentioned above, although embodiment of this invention was described, the aspect which this invention can take is not limited to these at all.

  In the metal filling apparatus 1 of the above example, the molten metal M is supplied into the processing chamber 2 so that the residual metal M2 floats on the liquid surface of the molten metal M, or is swept into the pipe 18 by the supplied molten metal M. However, it is not limited to this. For example, in order to prevent the residual metal M2 from approaching the vicinity of the surface to be processed of the semiconductor wafer K, a reservoir for temporarily receiving the residual metal M2 may be provided on the inner peripheral surface of the housing C. In addition, since the quantity which must supply the molten metal M increases by providing a reservoir part, if importance is attached to the usage-amount of the molten metal M, a reservoir part does not need to be provided in particular.

  In the above example, the pressing unit 4 is configured to be close to the semiconductor wafer K, but the semiconductor wafer K (holding base H) may be configured to be close to the pressing unit 4.

  In the above example, the molten metal M is supplied into the processing chamber 2 through the housing C. However, the molten metal M may be supplied into the processing chamber 2 through the holding table H. This will be described with reference to FIGS. 16 is an enlarged view of a part of the metal filling device, and FIG. 17 is a cross-sectional view taken along arrows A-A in which the housing C in FIG. 16 is extracted.

  As shown in FIGS. 16 and 17, the holding base H is provided with a pipe 16 penetrating from the side surface to the upper surface, and an adsorption hole H1 for adsorbing the semiconductor wafer K so as to penetrate from the upper surface to the lower surface. Is provided. In addition, the housing C has an annular groove C1 formed at the lower end surface thereof, and a plurality of notches C2 formed so as to penetrate from the side surface of the groove C1 to the inner peripheral surface. In addition, the groove | channel C1 does not necessarily need to be cyclic | annular, You may provide as a hollow in the position facing the opening part in the upper surface of the holding stand H of the piping 16. FIG. In this case, a notch is provided so as to penetrate from the side surface of the recess to the inner peripheral surface.

  In the metal filling apparatus configured as described above, the processing chamber 2 is formed by pressing the outer peripheral side lower end surface of the housing C against the holding base H to bring it into close contact therewith. In this case, it is preferable that the housing C is moved up and down with respect to the holding table H instead of the holding table H. Further, the space between the lower end surface on the outer peripheral side of the housing C and the upper surface of the holding table H and the space between the lower surface of the semiconductor wafer K and the upper surface of the holding table H are sealed by O-rings.

  In this metal filling apparatus, the molten metal M is supplied to the groove C1 formed in the housing C through the pipe 16, and then supplied onto the semiconductor wafer K through the notch C2. In this way, since the molten metal M is supplied from near the edge of the semiconductor wafer K, the residual metal M2 can be effectively pushed away.

  Furthermore, in the metal filling apparatus 1 of the above example, the pressing unit 4 and the semiconductor wafer K are used until they reach an amount that can cover the entire processing surface of the semiconductor wafer K without being bounced by the processing surface of the semiconductor wafer K. Although the molten metal M is supplied during the period, it is not limited to such a mode. For example, the molten metal M may be supplied into the processing chamber 2 so that the processing chamber 2 is completely filled, and the entire surface to be processed may be uniformly covered with the molten metal M. The metal filling apparatus 30 configured as described above will be described below with reference to FIG. In addition, about the component same as the structure of the metal filling apparatus 1, the same code | symbol is attached | subjected and the detailed description is abbreviate | omitted.

  As shown in FIG. 18, the metal filling device 30 includes a holding base H, a housing C, a piston P, a lifting mechanism 10, a pressing mechanism 3, a decompression mechanism 5, a heating mechanism 6, a molten metal supply mechanism 7, and a gas supply mechanism 8. The molten metal recovery mechanism 9 and the control device 11 are provided, and the pressing portion 4 is provided with an annular molten metal sealing portion 4a along the outer peripheral edge portion of the surface facing the holding table H. In the gas supply mechanism 8, a gas supply unit 8a and a pipe 15 are connected by a pipe 17 '. In the molten metal recovery mechanism 9, the molten metal recovery part 9a and a pipe 16 are connected by a pipe 18'. Has been. Furthermore, the control valve 9b of the molten metal recovery mechanism 9 can be switched between three states: closed, open through a throttle, and fully open. Two O-rings 12 a and 12 b are interposed between the piston P and the housing C, and the two O-rings 12 a and 12 b are fixed to the housing C. In the metal filling apparatus 30, when the processing chamber 2 is formed, the O-ring 14 keeps the airtightness between the surface of the semiconductor wafer K and the lower end surface of the housing C.

  According to the metal filling device 30, first, the semiconductor wafer K is placed on the holding table H in a state where the holding table H and the housing C are separated from each other. The holding table H is raised, and the lower end surface of the housing C is pressed against the surface of the semiconductor wafer K placed on the holding table H so that the processing chamber 2 is formed.

  Next, the vacuum pump 5a is operated and the control valve 5b is opened, the gas in the processing chamber 2 is exhausted, and the pressure in the processing chamber 2 and the minute space is reduced to a substantially vacuum state. Next, the piston P is moved toward the semiconductor wafer K by the pressing mechanism 3, and the molten metal sealing portion 4a is brought into contact with the surface of the semiconductor wafer K. Thereafter, the holding table H, The housing C and the piston P are heated to raise the temperature in the processing chamber 2 to a temperature equal to or higher than the melting point of the molten metal M. In this way, by raising the temperature in the processing chamber 2 with the molten metal sealing portion 4a in contact with the surface of the semiconductor wafer K, the molten or softened residual metal M2 is formed on the surface to be processed of the semiconductor wafer K. It is possible to reliably prevent the spread or spreading.

  Next, the control valve 5b is closed and the operation of the vacuum pump 5a is stopped, while the piston P is gradually raised by the pressing mechanism 3, the control valve 7b is opened, and the inside of the processing chamber 2 is completely filled with the molten metal M. The molten metal M is pressurized and supplied into the processing chamber 2 while maintaining the filled state. Then, after the volume of the processing chamber 2 reaches a predetermined volume, the control valve 7b is closed and the supply of the molten metal M into the processing chamber 2 is stopped. In this way, in the metal filling apparatus 30, the inside of the processing chamber 2 is completely filled with the molten metal M, so that the molten metal M is not repelled on the surface to be processed of the semiconductor wafer K, and the semiconductor wafer K is processed. The entire surface is uniformly covered with the molten metal M. Further, as described above, since the density of the residual metal M2 is smaller than the density of the supplied molten metal M, the residual metal M2 floats inside the molten metal M and is moved away from the surface to be processed.

  Next, the control device 9 opens the control valve 9b through the throttle and operates the pressing mechanism 3 to move the piston P toward the semiconductor wafer K. Thereby, the excess molten metal M1 is pushed out to the molten metal collection | recovery part 9a with the state in which the molten metal M was pressurized appropriately. Then, by further moving the piston P and pressing the molten metal sealing portion 4a against the surface to be processed of the semiconductor wafer K, the molten metal M is confined in the inner region of the molten metal sealing portion 4a, and the semiconductor wafer. Higher pressure is applied in the inner region of K, and the molten metal M is pushed into the minute space.

  Thereafter, the control valve 9b is fully opened, the control valve 8b is opened, the gas supply unit 8a is operated, an inert gas is supplied into the processing chamber 2, and the inside of the molten metal sealing unit 4a The excess molten metal M1 remaining in the portion other than the region is removed toward the molten metal recovery unit 9a. And after removing the excess molten metal M1 to the molten metal collection | recovery part 9a, while stopping the action | operation of the gas supply part 8a, the action | operation of the heating mechanism 6 is stopped, and the molten metal M with which it filled in micro space cooled Wait until it hardens. Thereafter, the holding table H is lowered by the lifting mechanism 10 to open the processing chamber 2, and the semiconductor wafer K is removed from the holding table H.

  The timing related to the operation of the heating mechanism 6, the opening and closing of the control valves 5 b, 7 b, 8 b, 9 b, the operation of the pressing mechanism 3, and the operation of the lifting mechanism 10 when performing the above-described series of metal filling processes by the metal filling device 30. An example of the chart is shown in FIG.

  As described above, in this metal filling apparatus 30, after the molten metal sealing portion 4a is brought into contact with the surface to be processed of the semiconductor wafer K, the temperature of the processing chamber 2 is raised to melt or soften the residual metal. It is possible to reliably prevent M2 from being placed on the surface to be processed or spreading. In addition, while the piston P is gradually raised, the molten metal M is supplied into the processing chamber 2 while maintaining the state where the processing chamber 2 is completely filled with the molten metal M. The residual metal M2 can be floated in the molten metal M, and the residual metal M2 can be moved away from the surface to be processed. Therefore, it is possible to prevent the residual metal M2 from being mixed into the molten metal M in the vicinity of the surface to be processed, and to prevent the filling failure caused by the residual metal M2 from occurring, and then the molten metal M is filled into the minute space. be able to.

  In the metal filling device 30, the configuration in which the excess molten metal M <b> 1 is pushed out from the processing chamber 2 while maintaining the pressurized state of the molten metal M through the throttle of the control valve 9 b has been described. For example, a configuration in which the piston P is moved to push out the excess molten metal M1 in a state where the molten metal recovery unit 9a is balanced and pressurized with an inert gas or the like so as to maintain the pressurized state of the molten metal M in the processing chamber 2. It is also good.

  Further, in the two metal filling devices 1 and 30, the molten metal M is supplied into the processing chamber 2 and exhausted in the processing chamber 2 through each pipe provided through the side wall of the housing C. Although it was set as the structure, it is not restricted to this, It is good also as a structure like the metal filling apparatus 40 shown in FIG. In FIG. 20, the same components as those of the metal filling devices 1 and 30 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 20, the metal filling device 40 includes a holding base H, a housing C, a piston P, a lifting mechanism 10, a pressing mechanism 3, a decompression mechanism 5, a heating mechanism 6, a molten metal supply mechanism 7, and a control device 11. Has been.

  In this metal filling device 40, the vacuum pump 5a and the processing chamber 2 are connected by a pipe 15 'having one end opened near the center of the surface of the piston P facing the surface to be processed of the semiconductor wafer K. The gas in the processing chamber 2 is exhausted through the pipe 15 ′. Similarly, the molten metal supply unit 7a and the processing chamber 2 are connected to each other by a pipe 16 ′ having one end opened near the center of the opposed surface of the piston P, and the molten metal M is connected to the pipe 16 ′. Is supplied into the processing chamber 2. Further, a gate valve 5c whose opening and closing is controlled by the control device 11 is provided at the opening on the piston P side of the pipe 15 '. Similarly, the control device is provided at the opening on the piston P side of the pipe 16'. 11 is provided with a gate valve 7c whose opening and closing is controlled. In the metal filling device 40, one of the two O-rings 12b and 12c interposed between the piston P and the housing C is fixed to the upper end side of the housing C, and the other O-ring 12b is connected to the other O-ring 12b. The ring 12c is fixed to the lower end side of the piston P.

  In addition, although the piston P in the metal filling device 40 has a configuration in which a pressing portion is not provided on the side facing the holding table H, when the pressing portion is provided, one end of the two pipes 15 ′ and 16 ′ is The pressing portion may be opened near the center of the surface facing the surface to be processed of the semiconductor wafer K.

  Next, a process of filling the molten metal M into the minute space of the semiconductor wafer K by the metal filling device 40 will be described with reference to FIGS.

  First, under the control of the control device 11, after the holding table H is lowered by the lifting mechanism 10, the semiconductor wafer K is placed on the holding table H, and then the holding table H is raised to perform an airtight process. Chamber 2 is formed. Thereafter, the vacuum pump 5a is operated, the control valve 5b and the gate valve 5c are opened, the gas in the processing chamber 2 is exhausted, and the inside of the processing chamber 2 is decompressed to a substantially vacuum state (see FIG. 21).

  Next, after the piston P is moved toward the processing surface of the semiconductor wafer K by the pressing mechanism 3 and the piston P is brought into contact with the processing surface, the holding base H, the housing C and the piston P are moved by the heating mechanism 6. The inside of the processing chamber 2 is heated to a temperature equal to or higher than the melting point of the molten metal M (see FIG. 22). By doing so, the spread of the molten or softened residual metal M2 to the surface to be processed of the semiconductor wafer K is prevented.

  Next, as shown in FIG. 23, the control valve 5b and the gate valve 5c are closed and the operation of the vacuum pump 5a is stopped, and then the control valve 7b and the gate valve 7c of the pipe 16 ′ are opened to process the molten metal M. After making it possible to supply the inside of the chamber 2, the piston P is gradually raised by the pressing mechanism 3, and the piston P is gradually separated from the surface to be processed, whereby the inside of the processing chamber 2 is completely filled with the molten metal M. The molten metal M is pressurized and supplied into the processing chamber 2 while maintaining the filled state. Then, after the volume of the processing chamber 2 reaches a predetermined volume, the movement of the piston P is stopped (see FIG. 24). In this way, by completely filling the inside of the processing chamber 2 with the molten metal M, the molten metal M is prevented from being repelled on the surface to be processed of the semiconductor wafer K, similarly to the metal filling device 30. The surface to be processed is uniformly covered with the molten metal M, and the residual metal M2 having a lower density than the molten metal M floats in the molten metal M, and the residual metal M2 is kept away from the surface to be processed. .

  Next, as shown in FIG. 25, the piston P is moved toward the semiconductor wafer K by the pressing mechanism with the control valve 7b and the gate valve 7c being opened. At that time, the molten metal M is pressurized with the same force as the supply pressure by moving the piston P with a force larger than the supply pressure of the molten metal M in the molten metal supply unit 7a to narrow the processing chamber 2. While the maintained state is maintained, the excess molten metal M1 is pushed back to the molten metal supply unit 7a through the pipe 16 '.

  Then, the piston P is further moved and left in a state where the piston P is pressed against the surface to be processed of the semiconductor wafer K (see FIG. 26), and then the control valve 7b and the gate valve 7c are closed, and the heating mechanism The heating of the holding table H, the housing C, and the piston P by 6 is stopped, the molten metal M is cooled until the temperature becomes lower than the melting point, and the process waits until the molten metal M filled in the minute space is cooled and hardened.

  If the supply pressure of the molten metal supply section 7a is insufficient as a pressure necessary to fill the minute space with the molten metal M without generating voids, before the piston P is pressed against the surface to be processed. At this stage, it is preferable to close the gate valve 7c and further pressurize the molten metal M confined in the processing chamber 2 with the piston P. In this case, the control device 11 controls the timing for closing the gate valve 7c so that the amount of the excess molten metal M1 on the surface to be processed is minimized.

  Thereafter, as shown in FIG. 27, the piston P is raised by the pressing mechanism 3, the holding base H is lowered by the lifting mechanism 10, the processing chamber 2 is opened, and the semiconductor wafer K is taken out from the holding base H.

  In addition, when the metal filling device 40 performs the above-described series of metal filling processes, the operation of the heating mechanism 6, the opening and closing of the control valves 5b and 7b, the opening and closing of the gate valves 5c and 7c, the operation of the pressing mechanism 3, and the lifting mechanism 10 FIG. 28 shows an example of a timing chart relating to the operation.

  Thus, also in this metal filling apparatus 40, since the inside of the processing chamber 2 is heated after the piston P is brought into contact with the surface to be processed of the semiconductor wafer K, the residual metal M2 that has been melted or softened. Can be prevented from spreading on the surface to be treated. In addition, by gradually raising the piston P after the molten metal M can be supplied, the surface to be treated is instantaneously covered with the supplied molten metal M and remains in the supplied molten metal M. The metal M2 floats, and the residual metal M2 moves away from the vicinity of the surface to be processed, and mixing of the residual metal M2 into the molten metal M near the surface to be processed is prevented. Therefore, the molten metal M can be filled in the minute space while suppressing the filling failure caused by the residual metal M2 being mixed.

  In the metal filling device 40, the molten metal M supplied into the processing chamber 2 is pushed back to the molten metal supply unit 7a. However, a molten metal recovery mechanism 9 may be provided. This will be described with reference to FIG. In FIG. 29, the same components as those of the metal filling device 40 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 29, the metal filling device 45 includes a holding base H, a housing C, a piston P, a lifting mechanism 10, a pressing mechanism 3, a pressure reducing mechanism 5, a heating mechanism 6, a molten metal supply mechanism 7, and a gas supply mechanism 8. The molten metal recovery mechanism 9 and the control device 11 are included. And in this metal filling apparatus 45, the gas supply part 8a of the gas supply mechanism 8 is connected between the control valve 5b of the piping 15 'and the gate valve 5c by piping 17', and the control valve 8b is It is provided between the gas supply unit 8a and the pipe 15 ′. Further, the molten metal recovery part 9a of the molten metal recovery mechanism 9 is connected between the control valve 7b and the gate valve 7c of the pipe 16 ′ by the pipe 18 ′, and the control valve 9b is connected to the molten metal recovery part 9a. It is provided between the pipe 16 '. Further, the pipe 15 ′ is connected between the control valve 5 b and the gate valve 5 c and the pipe 16 ′ is connected between the control valve 7 b and the gate valve 7 c by a pipe 41. Is provided with a control valve 42 whose opening and closing is controlled by the control device 11. The control valve 9b of the molten metal recovery mechanism 9 can be switched between three states: closed, open through a throttle, and fully open.

  In the metal filling device 45, the molten metal M is supplied into the processing chamber 2 in the same procedure as the metal filling device 40.

  Next, the control valve 7 b is closed and the control valve 9 b is opened through the throttle, and then the piston P is moved toward the semiconductor wafer K by the pressing mechanism 3. Thereby, while the molten metal M is appropriately pressurized, the excess molten metal M1 is pushed out to the molten metal recovery unit 9a and removed from the processing chamber 2, and the molten metal M is filled into the minute space. Is done. Then, the surplus molten metal M1 is removed from the surface to be processed of the semiconductor wafer K by further moving the piston P and pressing the piston P against the surface to be processed.

  Thereafter, the gate valve 7c is closed and the control valve 9b is fully opened. Then, the control valve 42 and the control valve 8b are opened, the gas supply unit 8a is operated, the inert gas is supplied to the pipe 16 'through the pipe 15' and the pipe 41, and the surplus remaining in the pipe 16 ' The molten metal M1 is pushed out to the molten metal recovery part 9a.

  After the excess molten metal M1 in the pipe 16 ′ is removed, the control valves 8b, 9b, and 42 are closed and the operation of the gas supply unit 8a is stopped. The molten metal M filled therein is cooled and hardened. Thereafter, the processing chamber 2 is opened and the semiconductor wafer K is taken out.

  The metal filling device 45 performs the above-described series of metal filling processes, the operation of the heating mechanism 6, the opening and closing of the control valves 5b, 7b, 8b, 9b and 42, the opening and closing of the gate valves 5c and 7c, and the pressing mechanism 3. FIG. 30 shows an example of a timing chart relating to the above-described operation and the operation of the lifting mechanism 10.

  As described above, also in the metal filling device 45, the molten or softened residual metal M2 can be prevented from spreading on the surface to be treated, and the mixing of the residual metal M2 into the molten metal M in the vicinity of the surface to be treated can be prevented. be able to. Further, since the excess molten metal M1 remaining in the pipe 16 ′ is removed, the fresh molten metal M is put into the processing chamber 2 when the metal filling process is performed on the continuous semiconductor wafer K. Can be supplied.

DESCRIPTION OF SYMBOLS 1 Metal filling apparatus 2 Processing chamber 3 Pushing mechanism 4 Pushing part 5 Depressurization mechanism 6 Heating mechanism 7 Molten metal supply mechanism 8 Gas supply mechanism 9 Molten metal collection | recovery mechanism 10 Elevating mechanism 11 Control apparatus C Housing H Holding stand K Semiconductor wafer P Piston

Claims (20)

A holding unit for holding a workpiece;
A cylindrical member having an internal space and having one end facing the holding portion;
A pressing member fitted in the inner space of the cylindrical member so as to freely advance and retract,
Using a metal filling apparatus in which an airtight processing chamber is formed by the object to be processed or the holding part held by the holding part, and the cylindrical member and the pressing member,
A metal filling method of filling a molten metal supplied onto the object to be processed in a minute space formed so as to open to the object surface of the object to be processed,
After performing a decompression step of decompressing the processing chamber,
Moving the pressing member to the surface to be processed of the object to be processed held by the holding unit, and performing an abutting step of bringing the pressing member into contact with the surface to be processed of the object to be processed;
Next, a heating step of heating the holding portion, the cylindrical member, and the pressing member is performed ,
Thereafter, in a state where the pressing member is in contact with the surface to be processed, a molten metal supply step of supplying a molten metal into the processing chamber;
A separation step of separating the pressing member from the surface to be processed of the object to be processed;
Thereafter, the metal filling method and performing as filling factory to fill the molten metal supplied to the processing chamber, in the micro space.   The molten metal supply step and the separation step are performed simultaneously, and the molten metal is supplied into the processing chamber while gradually moving the pressing member away from the surface to be processed. Item 2. The metal filling method according to Item 1. A molten metal sealing portion is provided on a surface of the pressing member that faces the surface to be processed,
In the abutting step, the pressing member is moved to the surface to be processed of the object to be processed held by the holding part, and the molten metal sealing part is brought into contact with the surface to be processed or the holding part of the object to be processed. The metal filling method according to claim 1, wherein the metal filling method is performed.   2. After the filling step is performed, a pressing member is moved to a surface to be processed of the object to be processed, and an excluding step of removing surplus molten metal from the object to be processed is further performed. 4. The metal filling method according to any one of items 3 to 3.   4. The metal filling method according to claim 1, wherein in the filling step, a pressurized gas is supplied into the processing chamber, and the molten metal supplied into the processing chamber is pressurized.   6. The metal filling method according to claim 5, wherein in the molten metal supply step, the molten metal is supplied into the processing chamber until the liquid level of the molten metal exceeds a position where the molten metal is supplied into the processing chamber.   6. The excluding step of removing excess molten metal from the workpiece by moving the pressing member to the workpiece surface side of the workpiece after the filling step is further performed. Or the metal filling method of 6. In the separation step, while the molten metal is continuously supplied into the processing chamber, the pressing member is separated from the surface to be processed of the object to be processed, and the processing chamber is completely filled with the molten metal.
In the filling step, the pressing member is moved to the surface to be processed of the object to be processed, and the molten metal supplied into the processing chamber is pressurized,
2. The method according to claim 1, wherein the pressing member is moved toward the surface to be processed of the object to be processed so as to be performed simultaneously with the removing step of removing excess molten metal from the object to be processed and the filling step. 4. The metal filling method according to any one of items 3 to 3.   9. The metal filling method according to claim 4, 7 or 8, further comprising a removal step of removing excess molten metal in the processing chamber after the exclusion step. After performing the exclusion step, further performing a removal step of removing excess molten metal in the processing chamber,
8. The metal filling method according to claim 7, wherein in the removing step, a pressurized gas is supplied into the processing chamber, and excess molten metal in the processing chamber is removed outside the processing chamber.   The removal step of moving the pressing member to the processing surface side of the object to be processed and removing excess molten metal in the processing chamber to the outside of the processing chamber is performed simultaneously with the filling step and the exclusion step. 9. The metal filling method according to 8. A metal filling device for filling molten metal supplied onto the object to be processed in a minute space formed so as to open on the object to be processed.
A holding unit for holding the object to be processed;
A cylindrical member having an internal space and having one end facing the holding portion;
A pressing member fitted in the internal space of the cylindrical member so as to be freely advanced and retracted;
A pressing mechanism for moving the pressing member forward and backward with respect to the object to be processed held by the holding unit;
A moving mechanism for moving at least one of the holding part and the cylindrical member in a direction approaching and separating from the other;
An airtight processing chamber is formed by the object to be processed or the holding part held by the holding part, and the cylindrical member and the pressing member,
And a decompression mechanism for decompressing the processing chamber;
A heating mechanism for heating the holding part, the cylindrical member and the pressing member;
A molten metal supply mechanism for supplying molten metal into the processing chamber;
A gas supply mechanism for supplying pressurized gas into the processing chamber;
A control device for controlling the operation of the pressing mechanism, the moving mechanism, the decompression mechanism, the molten metal supply mechanism, and the gas supply mechanism;
The controller is
In a state where the object to be processed is placed on the holding unit, the moving mechanism is operated, and the holding unit and the cylindrical member are brought close to each other to form a processing chamber;
After activating the decompression mechanism and performing a process of decompressing the processing chamber,
By the pressing mechanism, the pressing member is moved to the treated surface of the object, it executes a process of abutting the pressing member with the target surface of the object to be processed,
Next, the heating mechanism is operated to perform a process of heating the holding portion, the cylindrical member, and the pressing member,
Thereafter, in a state where the pressing member is in contact with the surface to be processed, the molten metal supply mechanism is operated to supply the molten metal into the processing chamber;
By the pressing mechanism, the pressing member and a process of separating from the processed surface of the object to be processed,
Thereafter, the gas supply mechanism is operated, and the pressurized gas supplied into the processing chamber, the processing pressurizing the supplied molten metal chamber, perform the processing of filling the molten metal into the minute space The metal filling device characterized by performing.   A process of supplying molten metal into the processing chamber and a process of separating the pressing member from the surface to be processed are simultaneously performed, and the pressing member is gradually moved from the surface to be processed by the pressing mechanism. 13. The metal filling apparatus according to claim 12, wherein the molten metal supply mechanism is operated while being separated to supply molten metal into the processing chamber.   13. The process for supplying molten metal into the processing chamber is characterized in that the molten metal is supplied into the processing chamber until the liquid level of the molten metal exceeds a position for supplying the molten metal into the processing chamber. Or the metal filling apparatus of 13.   The control device performs a process of removing the excess molten metal from the workpiece by moving the pressing member to the surface to be processed of the object to be processed by the pressing mechanism after performing the process of filling the molten metal. The metal filling device according to claim 12, further comprising:   The control device performs a process of removing excess molten metal from the workpiece, and then operates the gas supply mechanism to supply pressurized gas into the processing chamber, so that the excess molten metal in the processing chamber is supplied. The metal filling apparatus according to claim 15, further comprising a process of removing the gas outside the processing chamber. A metal filling device for filling molten metal supplied onto the object to be processed in a minute space formed so as to open on the object to be processed.
A holding unit for holding the object to be processed;
A cylindrical member having an internal space and having one end facing the holding portion;
A pressing member fitted in the internal space of the cylindrical member so as to be freely advanced and retracted;
A pressing mechanism for moving the pressing member forward and backward with respect to the object to be processed held by the holding unit;
A moving mechanism for moving at least one of the holding part and the cylindrical member in a direction approaching and separating from the other;
An airtight processing chamber is formed by the object to be processed or the holding part held by the holding part, and the cylindrical member and the pressing member,
And a decompression mechanism for decompressing the processing chamber;
A heating mechanism for heating the holding part, the cylindrical member and the pressing member;
A molten metal supply mechanism for supplying molten metal into the processing chamber;
A control device for controlling the operation of the pressing mechanism, the moving mechanism, the pressure reducing mechanism and the molten metal supply mechanism,
The controller is
In a state where the object to be processed is placed on the holding unit, the moving mechanism is operated, and the holding unit and the cylindrical member are brought close to each other to form a processing chamber;
After activating the decompression mechanism and performing a process of decompressing the processing chamber,
By the pressing mechanism, the pressing member is moved to the treated surface of the object, it executes a process of abutting the pressing member with the target surface of the object to be processed,
Next, the heating mechanism is operated to perform a process of heating the holding portion, the cylindrical member, and the pressing member,
Thereafter, in a state where the pressing member is in contact with the surface to be processed, the molten metal supply mechanism is operated to supply the molten metal into the processing chamber;
Under continuous supply of molten metal into the processing chamber, by said pressing mechanism, said pressing member is moved away from the target surface of the object to be processed, and executes the fully fill processing the processing chamber with molten metal ,
Thereafter, the pressing member brings the pressing member closer to the processing surface of the object to be processed, presses the molten metal supplied into the processing chamber, fills the minute space with the molten metal, and the object to be processed. metal filling apparatus and executes the processing to eliminate the molten metal from above.   The process of supplying molten metal into the processing chamber and the process of completely filling the processing chamber with molten metal are performed simultaneously, while the pressing member is gradually separated from the surface to be processed by the pressing mechanism, 18. The metal filling apparatus according to claim 17, wherein the molten metal supply mechanism is operated to supply the molten metal into the processing chamber so that the processing chamber is completely filled with the molten metal.   The process for removing excess molten metal from the processing chamber to the outside of the processing chamber is performed simultaneously with the processing for filling the minute space with the molten metal and removing the molten metal from the object to be processed. Item 19. The metal filling device according to Item 17 or 18. A molten metal sealing portion is provided on a surface of the pressing member that faces the surface to be processed,
In the process of bringing the pressing member into contact with the surface to be processed, the pressing mechanism moves the pressing member to the surface to be processed of the object to be processed, and the molten metal sealing portion is processed. 20. The metal filling device according to claim 12, wherein the metal filling device is brought into contact with a surface to be processed or a holding portion.

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