JP6097229B2 - Joining apparatus, joining system, and joining method - Google Patents

Description

  Embodiments disclosed herein relate to a bonding apparatus, a bonding system, and a bonding method.

  In recent years, for example, in a semiconductor device manufacturing process, a substrate to be processed such as a silicon wafer or a compound semiconductor wafer is becoming larger and thinner. A thin substrate to be processed having a large diameter may be warped or cracked during conveyance or polishing. For this reason, the substrate to be processed is reinforced by attaching a support substrate such as a glass substrate to the substrate to be processed.

  For example, in Patent Document 1, the substrate to be processed and the support substrate are held by the upper chuck and the lower chuck, respectively, and the substrate to be processed and the support substrate are brought into contact and pressed by lowering the upper chuck to join them together. A joining apparatus is disclosed. An adhesive is applied to the surface of the substrate to be processed or the support substrate, and the two are joined by being pressed as described above.

  Here, in Patent Document 1, an electrostatic chuck (ESC) that holds a substrate by electrostatic attraction is used as the upper chuck and the lower chuck.

JP2013-115124A

  However, the above-described conventional technology has room for further improvement in terms of optimizing the bonding process.

  For example, the electrostatic chuck used as the upper chuck and the lower chuck in the technique described in Patent Document 1 has a property that the electrostatic adsorption force remains for a while after the power is turned off. For this reason, for example, when the upper chuck is lifted after the joining process is completed, if the electrostatic chucking force remains on the upper chuck and the lower chuck, the residual chucking force is a force that peels off the substrate to be processed and the support substrate. As a result, the characteristics of the polymerized substrate may be deteriorated.

  An object of one embodiment is to provide a bonding apparatus, a bonding system, and a bonding method that can optimize a bonding process.

A joining apparatus according to an aspect of the embodiment includes a chamber, a first holding unit, a second holding unit, a support pin, a decompression unit, a pressurizing mechanism, and a control unit. The first holding unit is disposed in the chamber and holds the first substrate from above by electrostatic adsorption. The second holding unit is disposed in the chamber and holds the second substrate from below by electrostatic adsorption . The support pin can project from the holding surface of the second holding part. The decompression unit decompresses the inside of the chamber. The pressurizing mechanism pressurizes the first substrate and the second substrate by bringing the first holding unit and the second holding unit into contact with each other after the inside of the chamber is depressurized by the decompression unit. The control unit stops applying the voltage to the first holding unit within a period from when the first substrate and the second substrate are in contact to before the pressurization process of the first substrate and the second substrate is completed. To do. Further, the control unit is configured such that after the first substrate and the second substrate come into contact with each other, the superposed substrate in which the support pin protrudes and the first substrate and the second substrate are joined is separated from the holding surface of the second holding unit. The voltage application to the second holding unit is stopped within the previous period.

  According to one aspect of the embodiment, the bonding process can be optimized.

FIG. 1 is a schematic plan view showing the configuration of the joining system according to the first embodiment. FIG. 2 is a schematic side view of the substrate to be processed and the support substrate. FIG. 3 is a schematic cross-sectional view showing the configuration of the bonding apparatus. FIG. 4 is a schematic side cross-sectional view showing the configuration of the joint. FIG. 5 is a schematic side sectional view showing the configuration of the first holding unit. FIG. 6 is a schematic side sectional view showing the configuration of the second holding portion. FIG. 7 is a flowchart showing the processing procedure of the joining process. FIG. 8 is an explanatory diagram showing an operation example of the joining process. FIG. 9 is a timing chart showing an example of timing for stopping voltage application to the upper chuck. FIG. 10 is a timing chart showing another example of the timing for stopping the voltage application to the upper chuck. FIG. 11 is a timing chart showing another example of the stop timing of voltage application to the upper chuck. FIG. 12 is a timing chart showing another example of timing for stopping voltage application to the upper chuck. FIG. 13 is a timing chart showing an example of timing for stopping voltage application to the lower chuck. FIG. 14 is a timing chart showing another example of timing for stopping voltage application to the lower chuck.

  Hereinafter, embodiments of a joining device, a joining system, and a joining method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<1. Structure of joining system>
First, the configuration of the joining system according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic plan view showing the configuration of the joining system according to the first embodiment. FIG. 2 is a schematic side view of the substrate to be processed and the support substrate. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

  A bonding system 1 according to the first embodiment shown in FIG. 1 forms a superposed substrate T by bonding a substrate W to be processed and a support substrate S (see FIG. 2) via an adhesive G.

  In the following, as shown in FIG. 2, the plate surface of the substrate to be processed W that is bonded to the support substrate S via the adhesive G is referred to as “bonding surface Wj”, and the bonding surface Wj Is referred to as the “non-bonding surface Wn”. In addition, among the plate surfaces of the support substrate S, the plate surface on the side bonded to the substrate W to be processed via the adhesive G is referred to as “bonding surface Sj”, and the plate surface on the opposite side to the bonding surface Sj is defined as “ This is referred to as “non-joint surface Sn”.

  The substrate W to be processed (corresponding to an example of a first substrate) is a substrate in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, and the plate surface on the side where the electronic circuits are formed Is the joint surface Wj. The substrate W to be processed is thinned by polishing the non-bonded surface Wn after bonding to the support substrate S.

  On the other hand, the support substrate S (corresponding to an example of a second substrate) is a substrate having substantially the same diameter as the substrate W to be processed, and supports the substrate W to be processed. As the support substrate S, for example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer can be used in addition to a glass substrate. Further, as the adhesive G, for example, a thermoplastic resin is used.

  As shown in FIG. 1, the joining system 1 includes a carry-in / out station 2, a first transfer region 3, and a joining station 4. The carry-in / out station 2, the first transfer region 3, and the joining station 4 are integrally connected in this order in the positive direction of the X axis.

  The carry-in / out station 2 is a place where cassettes Cw, Cs, and Ct for storing a plurality of (for example, 25) substrates in a horizontal state are placed. For example, four cassette mounting tables 21 are placed in a line in the loading / unloading station 2. On each cassette mounting table 21, a cassette Cw that accommodates a substrate to be processed W, a cassette Cs that accommodates a support substrate S, and a cassette Ct that accommodates a superposed substrate T are respectively placed.

  Note that the number of cassette mounting tables 21 can be arbitrarily determined. Here, an example in which the cassette Ct is mounted on two of the four cassette mounting tables 21 has been shown, but one of these is a cassette for collecting, for example, a substrate having a defect. May be placed.

  In the first transport region 3, a transport path 31 extending in the Y-axis direction and a first transport device 32 that can move along the transport path 31 are arranged. The first transfer device 32 is also movable in the X-axis direction and can be swung around the Z-axis, and the cassette Cw, Cs, Ct mounted on the cassette mounting table 21 and the first receiving of the joining station 4 described later. The substrate W to be processed, the support substrate S, and the superposed substrate T are transferred to and from the transfer unit 41.

  The joining station 4 includes a first delivery unit 41 and a second transfer area 42. Further, the bonding station 4 includes a coating / heat treatment block G1 and a bonding processing block G2.

  The first delivery unit 41 is disposed between the first transport area 3 and the second transport area 42. In the first delivery unit 41, the substrate W, the support substrate S, and the superposed substrate T between the first transport device 32 in the first transport region 3 and the second transport device 420 in the second transport region 42 described later. Is delivered.

  A second transport device 420 is disposed in the second transport region 42. The second transfer device 420 can move in the X-axis direction and the Y-axis direction and can turn about the Z-axis, and the substrate W to be processed between the first delivery unit 41, the coating / heat treatment block G1, and the bonding processing block G2. Then, the support substrate S and the superposed substrate T are transported.

  The coating / heat treatment block G1 and the bonding processing block G2 are disposed to face each other with the second transfer region 42 interposed therebetween. That is, the second transfer region 42, the coating / heat treatment block G1, and the bonding processing block G2 are arranged in the order of the bonding processing block G2, the second transfer region 42, and the coating / heat treatment block G1 along the positive Y-axis direction. The

  In the coating / heat treatment block G1, two coating devices 43 and one heat treatment device 44 are arranged adjacent to the second transfer region 42, respectively. The coating device 43 is a device that applies the adhesive G to the bonding surface Wj of the substrate W to be processed. The heat treatment apparatus 44 is an apparatus that heats the substrate W to which the adhesive G is applied to a predetermined temperature.

  In the joining processing block G2, four joining devices 45 are arranged adjacent to the second transport region 42. The bonding device 45 is a device that bonds the target substrate W and the support substrate S together. A specific configuration of the bonding apparatus 45 will be described later.

  The joining system 1 includes a control device 5. The control device 5 controls the operation of the joining system 1. The control device 5 is a computer, for example, and includes a control unit 6 and a storage unit 7. The storage unit 7 stores a program for controlling various processes such as a joining process. The control unit 6 is, for example, a CPU (Central Processing Unit), and controls the operation of the bonding system 1 by reading and executing a program stored in the storage unit 7.

  The program may be recorded on a computer-readable recording medium and installed in the storage unit 7 of the control device 5 from the recording medium. Examples of the computer-readable recording medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card. Moreover, the control part 6 may be comprised only with hardware, without using a program.

  In the bonding system 1 configured as described above, first, the first transfer device 32 in the first transfer region 3 takes out the substrate W to be processed from the cassette Cw placed on the cassette mounting table 21 and takes out the processed substrate. The substrate W is transferred to the first delivery unit 41. At this time, the substrate W to be processed is transported with the non-joint surface Wn facing downward.

  The to-be-processed substrate W conveyed to the 1st delivery part 41 is taken out from the 1st delivery part 41 by the 2nd conveyance apparatus 420, and is carried in into the coating device 43 of the application | coating and heat processing block G1. The coating device 43 includes, for example, a spin chuck, and sucks and holds the non-joint surface Wn of the substrate to be processed W with the spin chuck. Then, the coating device 43 supplies the liquid adhesive G to the bonding surface Wj of the substrate to be processed W while rotating the substrate to be processed W that is held by suction. Thereby, the adhesive G is spread on the bonding surface Wj of the substrate W to be processed.

  After the adhesive G is applied by the coating device 43, the substrate W to be processed is unloaded from the coating device 43 by the second transfer device 420 and loaded into the heat treatment device 44. The heat treatment apparatus 44, for example, heats the substrate W to be processed in an inert atmosphere, thereby volatilizing a solvent such as an organic solvent contained in the adhesive G so that the adhesive G is harder than when applied. . Thereafter, the temperature of the substrate to be processed W is adjusted to a predetermined temperature, for example, room temperature, by the heat treatment apparatus 44.

  After the heat treatment is performed by the heat treatment apparatus 44, the substrate to be processed W is unloaded from the heat treatment apparatus 44 by the second transfer apparatus 420 and loaded into the bonding apparatus 45.

  On the other hand, the support substrate S is taken out from the cassette Cs by the first transport device 32 and transported to the first delivery unit 41, and is further taken out from the first delivery unit 41 by the second transport device 420 and transported to the joining device 45. Is done.

  When the substrate to be processed W and the support substrate S are carried into the bonding apparatus 45, the bonding process of the substrate to be processed W and the support substrate S is performed by the bonding apparatus 45. Thereby, the superposition | polymerization board | substrate T is formed. Thereafter, the superposed substrate T is transported to the first delivery unit 41 by the second transport device 420 and transported to the cassette Ct by the first transport device 32. Thus, a series of processing ends.

<2. Structure of joining device>
Next, the structure of the joining apparatus 45 is demonstrated with reference to FIG. FIG. 3 is a schematic cross-sectional view showing the configuration of the bonding apparatus 45.

  As shown in FIG. 3, the joining device 45 includes a processing chamber 50 that can seal the inside. A loading / unloading port 51 for the substrate W to be processed, the support substrate S, and the superposed substrate T is formed on the side surface of the processing chamber 50 on the second transfer region 42 side. The loading / unloading port 51 is provided with an open / close shutter (not shown).

  Inside the processing chamber 50, an inner wall 52 that divides a region in the processing chamber 50 into a preprocessing region D1 and a bonding region D2 may be provided. When the inner wall 52 is provided, a loading / unloading port 53 for the target substrate W, the support substrate S, and the superposed substrate T is formed on the inner wall 52, and an opening / closing shutter (not shown) is provided at the loading / unloading port 53. The aforementioned loading / unloading port 51 is formed on the side surface of the processing chamber 50 in the preprocessing region D1.

  In the pretreatment region D <b> 1, a delivery unit 60 that delivers the substrate W to be processed, the support substrate S, and the superposed substrate T to and from the outside of the bonding apparatus 45 is provided. The delivery unit 60 is disposed adjacent to the loading / unloading port 51.

  The delivery unit 60 includes a delivery arm 61 and a support pin 62. The delivery arm 61 delivers the substrate W to be processed, the support substrate S, and the superposed substrate T between the second transfer device 420 (see FIG. 1) and the support pins 62. The support pins 62 are provided in a plurality of, for example, three locations, and support the target substrate W, the support substrate S, and the superposed substrate T.

  The delivery unit 60 is arranged in a plurality of, for example, two stages in the vertical direction, and can deliver any two of the target substrate W, the support substrate S, and the superposed substrate T at the same time. For example, the substrate W to be processed or the support substrate S before bonding may be delivered by one delivery unit 60, and the superposed substrate T after joining may be delivered by another delivery unit 60. Alternatively, the substrate W to be processed before bonding may be delivered by one delivery unit 60 and the support substrate S before joining may be delivered by another delivery unit 60.

  On the Y-axis negative direction side of the pretreatment region D1, that is, the loading / unloading port 53 side, for example, a reversing unit 70 that reverses the front and back surfaces of the substrate W to be processed is provided.

  The reversing unit 70 includes a holding arm 71 that holds the target substrate W or the support substrate S in between. The holding arm 71 extends in the horizontal direction (X-axis direction in FIG. 3), is rotatable around the horizontal axis, and is in the horizontal direction (X-axis direction and Y-axis direction) and the vertical direction ( It can move in the Z-axis direction).

  The reversing unit 70 also has an adjustment function for adjusting the horizontal direction of the substrate to be processed W or the support substrate S. Specifically, the reversing unit 70 includes a detection unit 72 that detects the position of the notch portion of the support substrate S or the substrate W to be processed. The reversing unit 70 detects the position of the notch portion by the detection unit 72 while detecting the position of the notch portion while moving the support substrate S or the substrate W to be processed held by the holding arm 71 in the horizontal direction. The horizontal direction of the substrate to be processed W or the support substrate S is adjusted by adjusting.

  On the Y axis positive direction side of the bonding region D2, a transport unit 80 for transporting the substrate to be processed W, the support substrate S, and the superposed substrate T is provided to the delivery unit 60, the reversing unit 70, and the bonding unit 90 described later. . The transport unit 80 is disposed adjacent to the loading / unloading port 53.

  The transport unit 80 includes two transport arms 81 and 82. The transfer arms 81 and 82 are arranged in two stages in this order from the bottom in the vertical direction, and can be moved in the horizontal direction and the vertical direction by a driving unit (not shown).

  Of the transfer arms 81 and 82, the transfer arm 81 holds and transfers the back surface of the support substrate S or the like, that is, the non-joint surface Sn. The transport arm 82 holds and transports the front surface of the substrate W whose front and back surfaces are reversed by the reversing unit 70, that is, the outer peripheral portion of the bonding surface Wj.

  A bonding portion 90 that bonds the target substrate W and the support substrate S is provided on the Y axis negative direction side of the bonding region D2.

  In the joining apparatus 45 configured as described above, when the substrate to be processed W is delivered to the delivery arm 61 of the delivery unit 60 by the second transport device 420, the delivery arm 61 receives the substrate to be treated W to the support pins 62. hand over. Thereafter, the substrate W to be processed is transported from the support pin 62 to the reversing unit 70 by the transport arm 81 of the transport unit 80.

  The substrate W transferred to the reversing unit 70 is adjusted in the horizontal direction by detecting the position of the notch by the detecting unit 72 of the reversing unit 70. Thereafter, the front and back surfaces of the substrate W to be processed are reversed by the reversing unit 70. That is, the joint surface Wj is directed downward.

  Thereafter, the substrate W to be processed is transferred from the reversing unit 70 to the bonding unit 90 by the transfer arm 82 of the transfer unit 80. At this time, since the transfer arm 82 holds the outer peripheral portion of the substrate W to be processed, it is possible to prevent the bonding surface Wj from being contaminated by particles or the like attached to the transfer arm 82, for example.

  On the other hand, when the support substrate S is delivered to the delivery arm 61 of the delivery unit 60 by the second transfer device 420, the delivery arm 61 delivers the support substrate S to the support pins 62. Thereafter, the support substrate S is transported from the support pins 62 to the reversing unit 70 by the transport arm 81 of the transport unit 80.

  The support substrate S conveyed to the reversing unit 70 is adjusted in the horizontal direction by detecting the position of the notch by the detecting unit 72 of the reversing unit 70. Thereafter, the support substrate S is transported from the reversing unit 70 to the bonding unit 90 by the transport arm 81 of the transport unit 80.

  When the carry-in of the substrate to be processed W and the support substrate S to the bonding portion 90 is completed, the substrate to be processed W and the support substrate S are bonded to each other by the bonding portion 90 to form a superposed substrate T. The formed superposed substrate T is transported from the joining section 90 to the delivery section 60 by the transport arm 81 of the transport section 80, and then delivered to the delivery arm 61 through the support pin 62, and further from the delivery arm 61 to the second arm. It is delivered to the transfer device 420.

<3. Structure of joint part>
Next, the structure of the junction part 90 is demonstrated with reference to FIG. FIG. 4 is a schematic side cross-sectional view showing the configuration of the joint portion 90. In FIG. 4, only components necessary for explaining the characteristics of the joint portion 90 are shown, and descriptions of general components are omitted.

  As shown in FIG. 4, the joint portion 90 includes an upper chuck 101 and a lower chuck 201. The upper chuck 101 holds the substrate W to be processed from above. The lower chuck 201 is disposed opposite to the upper chuck 101 below the upper chuck 101 and holds the support substrate S from below. The upper chuck 101 and the lower chuck 201 have a substantially disk shape having a larger diameter than the target substrate W and the support substrate S.

  The upper chuck 101 and the lower chuck 201 are electrostatic chucks, and hold the target substrate W and the support substrate S by electrostatic attraction, respectively.

  Here, the configuration of the upper chuck 101 and the lower chuck 201 will be described with reference to FIGS. 5 and 6. FIG. 5 is a schematic side sectional view showing the configuration of the upper chuck 101, and FIG. 6 is a schematic side sectional view showing the configuration of the lower chuck 201.

  As shown in FIGS. 5 and 6, the upper chuck 101 and the lower chuck 201 are Johnson-Rahbek type electrostatic chucks and include electrostatic chucking portions 111 and 211.

  The electrostatic attraction portions 111 and 211 each include a plurality of internal electrodes 111a and 211a, and the electrostatic force generated on the holding surfaces 113 and 213 by the internal electrodes 111a and 211a is used for the substrate W to be processed. The non-bonding surface Wn and the non-bonding surface Sn of the support substrate S are adsorbed, respectively.

  As described above, by using the electrostatic chuck as the upper chuck 101 and the lower chuck 201, it is possible to hold the target substrate W and the support substrate S even in a reduced pressure atmosphere.

  That is, as the holding unit for the target substrate W and the support substrate S, a vacuum chuck that performs suction holding using negative pressure may be used. However, since the suction force of the vacuum chuck is reduced in a reduced pressure environment, there is a possibility that the processing target substrate W and the supporting substrate S may drop or be displaced. On the other hand, since the electrostatic chuck does not reduce the attracting force even in a vacuum environment, the substrate to be processed W and the support substrate S can be reliably held.

  Further, when a mechanical chuck or the like that performs mechanical holding is used as the holding portion, the substrate W to be processed and the support substrate S may be damaged, whereas the electrostatic chuck is compared with the mechanical chuck or the like. Thus, the target substrate W and the support substrate S are hardly damaged.

  Note that the lower chuck 201 may be a vacuum chuck, and a rubber pad may be provided on the holding surface thereof to prevent displacement of the support substrate S in a reduced pressure atmosphere. However, when the joining process is performed in a high temperature environment exceeding the heat resistance temperature of the rubber pad, it is preferable to use an electrostatic chuck for the lower chuck 201 as well.

  Further, the upper chuck 101 and the lower chuck 201 include vacuum suction units 112 and 212 in addition to the electrostatic suction units 111 and 211.

  As shown in FIGS. 5 and 6, the vacuum suction portions 112 and 212 include intake spaces 112 a and 212 a and a plurality of through holes 112 b and 212 b communicating from the holding surfaces 113 and 213 to the intake spaces 112 a and 212 a. Intake devices 115 and 215 such as a vacuum pump are connected to the intake spaces 112a and 212a through intake pipes 114 and 214, respectively.

  The vacuum suction units 112 and 212 use the negative pressure generated by the suction of the suction devices 115 and 215 to suck the non-joint surface Wn of the substrate to be processed W and the non-joint surface Sn of the support substrate S, respectively. The target substrate W and the support substrate S are held.

  The upper chuck 101 and the lower chuck 201 are made of ceramics such as aluminum nitride, for example.

  Further, the upper chuck 101 and the lower chuck 201 have heating mechanisms 117 and 217, respectively. The heating mechanism 117 heats the substrate to be processed W held by the upper chuck 101, and the heating mechanism 217 heats the support substrate S held by the lower chuck 201.

  Further, the lower chuck 201 contains a plurality of support pins 301. The support pins 301 can protrude from the holding surface 213 of the lower chuck 201, and support the superposed substrate T in a state of floating from the holding surface 213 by protruding from the holding surface 213. The lower chuck 201 is supported at a predetermined height by the spacer 204.

  The joining unit 90 includes a base member 105 and a pressurizing mechanism 106. The base member 105 is attached to the ceiling surface inside the first chamber portion 511 described later.

  The pressurizing mechanism 106 moves the upper chuck 101 vertically downward to bring the target substrate W into contact with the support substrate S and pressurize it. The pressurizing mechanism 106 includes a pressure vessel 161, a gas supply pipe 162, and a gas supply source 163.

  The pressure vessel 161 is made of, for example, a stainless steel bellows that can be expanded and contracted in the vertical direction. The lower end portion of the pressure vessel 161 is fixed to the upper surface of the upper chuck 101, and the upper end portion is fixed to the lower surface of the base member 105.

  One end of the gas supply pipe 162 is connected to the pressure vessel 161 via the base member 105 and a first chamber portion 511 described later, and the other end is connected to the gas supply source 163.

  In such a pressure vessel 161, the gas is supplied from the gas supply source 163 through the gas supply pipe 162 to the inside of the pressure vessel 161, whereby the pressure vessel 161 extends and the upper chuck 101 is lowered. Thereby, the to-be-processed substrate W contacts with the support substrate S and is pressurized. The pressure applied to the target substrate W and the support substrate S is adjusted by adjusting the pressure of the gas supplied to the pressure vessel 161.

  The joining unit 90 includes a chamber 501, a moving mechanism 502, a decompression unit 503, a first imaging unit 504, and a second imaging unit 505.

  The chamber 501 is a processing container that can be sealed inside, and includes a first chamber portion 511 and a second chamber portion 512. The first chamber portion 511 is a bottomed cylindrical container having an open lower portion, and the upper chuck 101, the pressure container 161, and the like are accommodated therein. The second chamber portion 512 is a bottomed cylindrical container with an open top, and houses the lower chuck 201, the spacer 204, and the like inside.

  The first chamber portion 511 is configured to be vertically movable by a lifting mechanism (not shown) such as an air cylinder. The first chamber portion 511 is lowered by the lifting mechanism and brought into contact with the second chamber portion 512, thereby forming a sealed space inside the chamber 501. A seal member 513 for ensuring the confidentiality of the chamber 501 is provided on the contact surface of the first chamber portion 511 with the second chamber portion 512. As the seal member 513, for example, an O-ring is used.

  The moving mechanism 502 is provided on the outer peripheral portion of the first chamber portion 511 and moves the upper chuck 101 in the horizontal direction via the first chamber portion 511. A plurality of (for example, five) such moving mechanisms 502 are provided on the outer peripheral portion of the first chamber portion 511, and four of the five moving mechanisms 502 are used for the horizontal movement of the upper chuck 101, and the rest. Is used to rotate the upper chuck 101 around the vertical axis.

  The moving mechanism 502 includes a cam 521 that contacts the outer peripheral portion of the first chamber portion 511 and moves the upper chuck 101, and a rotation drive unit 523 that rotates the cam 521 via the shaft 522. The cam 521 is provided eccentrically with respect to the central axis of the shaft 522. Then, by rotating the cam 521 by the rotation driving unit 523, the center position of the cam 521 with respect to the upper chuck 101 moves, and the upper chuck 101 can be moved in the horizontal direction.

  The decompression unit 503 is provided, for example, below the second chamber unit 512 and decompresses the interior of the chamber 501. The decompression unit 503 includes an intake pipe 531 for taking in the atmosphere in the chamber 501 and an intake device 532 such as a vacuum pump connected to the intake pipe 531.

  The first imaging unit 504 is disposed below the upper chuck 101 and images the surface of the substrate W to be processed held by the upper chuck 101. The second imaging unit 505 is arranged above the lower chuck 201 and images the surface of the support substrate S held by the lower chuck 201.

  The first image pickup unit 504 and the second image pickup unit 505 are configured to be movable in a horizontal direction by a moving mechanism (not shown), and enter the chamber 501 before the first chamber unit 511 is lowered, and the substrate to be processed. W and the support substrate S are imaged. The imaging data of the first imaging unit 504 and the second imaging unit 505 are transmitted to the control device 5. As the first imaging unit 504 and the second imaging unit 505, for example, wide-angle CCD cameras are used.

  In addition, the junction part 90 is provided in the inside of the process container which is not shown in figure, and FFU is provided in the ceiling part of this process container.

<4. Operation of the joint>
Next, the procedure of the joining process performed by the joining unit 90 will be described with reference to FIGS. FIG. 7 is a flowchart showing the processing procedure of the joining process. FIG. 8 is an explanatory diagram showing an operation example of the joining process. The joining unit 90 executes each processing procedure shown in FIG. 7 according to the control of the control device 5.

  As shown in FIG. 7, the bonding unit 90 holds the substrate W to be processed by the upper chuck 101 by turning on the voltage application to the electrostatic chuck 111 of the upper chuck 101 (step S101). Further, the bonding unit 90 holds the support substrate S with the lower chuck 201 by turning on the voltage application to the electrostatic attraction unit 211 of the lower chuck 201 (step S102). Note that the upper chuck 101 and the lower chuck 201 are heated to a predetermined temperature by the heating mechanism 117 and the heating mechanism 217 in advance. The predetermined temperature is, for example, a temperature of 300 ° C. or higher.

  Subsequently, the joining unit 90 performs an alignment process (step S103). In such an alignment process, the first imaging unit 504 and the second imaging unit 505 shown in FIG. 4 move in the horizontal direction and enter the chamber 501 to image the surface of the substrate to be processed W and the support substrate S, respectively.

  Thereafter, the position of the reference point of the substrate W to be processed displayed in the image captured by the first imaging unit 504, and the position of the reference point of the support substrate S displayed in the image captured by the second imaging unit 505 The horizontal position of the substrate W to be processed is adjusted by the moving mechanism 502 so that the two match. Thus, the horizontal position of the substrate W to be processed with respect to the support substrate S is adjusted.

  Subsequently, the joining unit 90 moves the first imaging unit 504 and the second imaging unit 505 out of the chamber 501, and then lowers the first chamber unit 511 (step S104). As a result, the first chamber portion 511 contacts the second chamber portion 512, and a sealed space is formed in the chamber 501.

  Subsequently, the bonding unit 90 decompresses the interior of the chamber 501 by sucking the atmosphere in the chamber 501 using the decompression unit 503 (step S105).

  Subsequently, the bonding unit 90 lowers the upper chuck 101 using a moving mechanism (not shown) (step S106). Thereby, the to-be-processed substrate W and the support substrate S contact. At this time, no pressure is applied to the substrate W and the support substrate S.

  Subsequently, the bonding unit 90 pressurizes the target substrate W and the support substrate S by further supplying gas to the pressure vessel 161 to bring the inside of the pressure vessel 161 to a desired pressure (step S107).

  The adhesive G applied to the bonding surface Wj of the substrate to be processed W is softened by heating, and the substrate to be processed W is pressed against the support substrate S at a desired pressure for a predetermined time, The support substrate S is joined (see FIG. 8). At this time, since the inside of the chamber 501 is in a reduced pressure atmosphere, there is no possibility that a void is generated between the target substrate W and the support substrate S.

  Subsequently, the bonding unit 90 turns off the voltage application to the upper chuck 101 (step S108). Thereby, the holding of the substrate W to be processed by the upper chuck 101 is released.

  Subsequently, the bonding unit 90 ends the pressurization process of the substrate to be processed W and the support substrate S by discharging the gas supplied to the pressure vessel 161 from the pressure vessel 161 and lowering the pressure of the pressure vessel 161. (Step S109).

  Subsequently, after the upper chuck 101 is lifted by a moving mechanism (not shown) (Step S110), the joining unit 90 releases the decompressed state by the decompressing unit 503 and opens the chamber 501 to the atmosphere (Step S111).

  Subsequently, the bonding unit 90 turns off the voltage application to the lower chuck 201 (step S112). As a result, the holding of the support substrate S by the lower chuck 201 is released. Then, after the first chamber portion 511 is raised (step S113), the joining portion 90 raises the support pin 301 (step S114), and the series of joining processes is completed.

  The overlapped substrate T formed by bonding the substrate to be processed W and the support substrate S is unloaded from the bonding unit 90 by the transfer unit 80 and transferred to the cassette Ct by the above-described procedure.

  As described above, the bonding portion 90 according to the first embodiment does not stop the voltage application to the upper chuck 101 after the pressurizing process is finished, but is applied to the upper chuck 101 before the pressurizing process is finished. Since the voltage application is stopped, the bonding process can be optimized.

  That is, the electrostatic chucks used as the upper chuck 101 and the lower chuck 201 have a property that the electrostatic attraction force remains for a while after the voltage application is stopped. For this reason, when the application of voltage to the upper chuck 101 is stopped after the pressurizing process is completed, when the upper chuck 101 is subsequently lifted, the electrostatic attraction force remaining on the upper chuck 101 and the lower chuck 201 ( Hereinafter, an unnecessary force may be applied to the superposed substrate T due to “residual adsorption force”.

  When an unnecessary force is applied to the superposed substrate T, specifically, a force in a direction in which the target substrate W and the support substrate S are peeled off, for example, a void is generated between the target substrate W and the support substrate S, or the target substrate is processed. The alignment substrate T and the support substrate S may be misaligned, or the adhesive G at the peripheral edge of the polymerization substrate T may be drawn between the target substrate W and the support substrate S, resulting in insufficient coverage. There is a risk of deteriorating the characteristics of

  Therefore, the joining unit 90 according to the first embodiment stops applying the voltage to the upper chuck 101 before the pressurizing process is completed. The residual attracting force tends to be smaller as the time after the voltage application to the upper chuck 101 is stopped is longer. For this reason, by stopping the voltage application to the upper chuck 101 before the pressurizing process is finished, the upper chuck 101 is made to be less than the case where the voltage application to the upper chuck 101 is stopped after the pressurizing process is finished. The residual attracting force of the upper chuck 101 can be reduced before it is raised. Therefore, according to the joining portion 90 according to the first embodiment, it is possible to prevent unnecessary force from being applied to the superposed substrate T when the upper chuck 101 is raised after the pressurizing process is finished.

  Here, the timing for stopping the voltage application to the upper chuck 101 will be specifically described with reference to FIG. FIG. 9 is a timing chart showing an example of the stop timing of voltage application to the upper chuck 101.

  As shown in FIG. 9, in the joint portion 90, after the pressure in the chamber 501 is reduced from the atmospheric pressure to the predetermined pressure Pa by the pressure reducing portion 503, the upper chuck 101 is lowered from the raised position to the lowered position, and then The pressing force of the target substrate W and the support substrate S is increased to a desired pressing force Pb, and the pressurizing process is started. Further, in the bonding portion 90, after the pressurizing process is completed and the applied pressure of the target substrate W and the support substrate S returns to 0, the upper chuck 101 rises from the lowered position to the raised position, and then in the chamber 501. Is opened to the atmosphere.

  The voltage application to the upper chuck 101 is stopped immediately after the pressurizing process is started. Specifically, if the time from the start of the pressurizing process to the time when the voltage application to the upper chuck 101 is stopped is T1, and the time from the start of the pressurizing process to the end is T2, T1 is The time is shorter than half of T2. For example, when T2 is 200 seconds, T1 is about 10 seconds.

  As described above, by stopping the voltage application to the upper chuck 101 immediately after the pressurizing process is started, the residual adsorption force of the upper chuck 101 can be sufficiently reduced. When raised, it is possible to reliably prevent unnecessary force from being applied to the superposed substrate T.

  Further, according to the bonding portion 90 according to the first embodiment, the voltage application to the upper chuck 101 is stopped after the pressurizing process is started. There is no possibility that the substrate W to be processed is displaced.

  As described above, the joining unit 90 according to the first embodiment includes the chamber 501, the upper chuck 101 (corresponding to an example of the first holding unit), the lower chuck 201, the decompression unit 503, and the pressurizing mechanism. 106 and a control unit 6. The upper chuck 101 is disposed in the chamber 501 and holds the substrate W to be processed by electrostatic adsorption. The lower chuck 201 is disposed in the chamber 501 and holds the support substrate S. The decompression unit 503 decompresses the inside of the chamber 501. The pressurizing mechanism 106 pressurizes the substrate to be processed W and the support substrate S by bringing the upper chuck 101 up after the inside of the chamber 501 has been decompressed by the decompression unit 503. The control unit 6 stops the voltage application to the upper chuck 101 within a period from when the pressurization process of the substrate to be processed W and the support substrate S is started to before it is finished.

  As a result, the bonding portion 90 according to the first embodiment allows the residual chucking force of the upper chuck 101 to be raised when the upper chuck 101 is raised, as compared with the case where the voltage application to the upper chuck 101 is stopped after the pressurizing process. Therefore, it is possible to prevent an unnecessary force from being applied to the superposed substrate T when the upper chuck 101 is raised. Therefore, according to the joint part 90 according to the first embodiment, the joining process can be optimized.

  By the way, the stop timing of the voltage application to the upper chuck 101 is not limited to the above-described example. Therefore, hereinafter, another example of the timing of stopping the voltage application to the upper chuck 101 will be described with reference to FIGS. 10 to 12 are timing charts showing other examples of the stop timing of voltage application to the upper chuck 101. FIG.

  In the above-described example, an example in which the voltage application to the upper chuck 101 is stopped immediately after the pressurization process is started is shown. However, the timing at which the voltage application to the upper chuck 101 is stopped is not necessarily the pressurization process. You don't need to be right after the start of.

  That is, as shown in FIG. 10, the joining portion 90 has a time T3 until the residual chucking force of the upper chuck 101 disappears and a time T4 until the upper chuck 101 is raised after the pressurizing process is completed. The voltage application to the upper chuck 101 may be stopped by the offset time T5 determined based on the timing before the pressurization processing end timing. Thereby, the upper chuck 101 can be raised in a state in which the residual chucking force of the upper chuck 101 is surely lost.

  The offset time T5 may be a time obtained by subtracting the time T4 until the upper chuck 101 is raised after the pressurization process is completed from the time T3 until the residual chucking force of the upper chuck 101 disappears. However, the time may be a time obtained by multiplying or adding a predetermined coefficient.

  In the above-described example, the voltage application to the upper chuck 101 is stopped after the pressurizing process is started. However, if the substrate to be processed W and the support substrate S are in contact with each other, at least the substrate to be processed W is processed. Can be prevented from falling. Therefore, as illustrated in FIG. 11, the bonding unit 90 may stop the voltage application to the upper chuck 101 before the pressurizing process is started. Specifically, the bonding unit 90 applies a voltage to the upper chuck 101 after the upper chuck 101 is lowered and the substrate to be processed W comes into contact with the support substrate S and before the pressurizing process is started. It may be stopped.

  In the above-described example, the voltage application to the upper chuck 101 is immediately stopped. However, the bonding unit 90 may gradually decrease the voltage applied to the upper chuck 101.

  For example, as illustrated in FIG. 12, the bonding unit 90 may decrease the applied voltage of the upper chuck 101 step by step so that the voltage application of the upper chuck 101 stops by the offset time T6. Note that the method of lowering the applied voltage may not be stepwise, and may be linear or curvilinear, for example.

(Second Embodiment)
In the second embodiment, the stop timing of voltage application to the lower chuck 201 will be described. FIG. 13 is a timing chart showing an example of the stop timing of voltage application to the lower chuck 201.

  As shown in FIG. 13, like the upper chuck 101, the joining unit 90 may stop the voltage application to the lower chuck 201 within a period from when the pressurizing process is started to when it is finished.

  Similar to the upper chuck 101, the lower chuck 201, which is an electrostatic chuck, has the property that the electrostatic attraction force remains for a while after the voltage application is stopped. For this reason, when the voltage application to the lower chuck 201 is stopped after the pressurizing process is finished, the support pin 301 (see FIG. 4) is then raised to hold the superposed substrate T on the holding surface 213 of the lower chuck 201. There is a possibility that an unnecessary force is applied to the superposed substrate T due to the residual adsorption force of the lower chuck 201 when it is lifted off.

  On the other hand, the joining unit 90 according to the second embodiment stops voltage application to the lower chuck 201 before the pressurizing process is completed, so that the voltage application to the lower chuck 201 is completed after the pressurizing process is completed. As compared with the case where the operation is stopped, the residual chucking force of the lower chuck 201 can be reduced before the support pin 301 is raised. Therefore, according to the joint portion 90 according to the second embodiment, it is possible to prevent unnecessary force from being applied to the superposed substrate T when the support pin 301 is raised after the pressurization process is completed.

  In addition, as long as the to-be-processed substrate W and the support substrate S are contacting, the position shift of the support substrate S is suppressed. For this reason, the bonding portion 90 includes the lower chuck 201 between the time when the upper chuck 101 is lowered from the raised position to the lowered position and the target substrate W and the support substrate S come into contact with each other and the pressure treatment is started. It is also possible to stop the voltage application to.

  In addition, after the pressurizing process is finished, the timing when the support pin 301 rises is later than the timing when the upper chuck 101 rises. In other words, the timing at which the residual chucking force of the lower chuck 201 should be zero is after the timing at which the residual chucking force of the upper chuck 101 should be zero. Therefore, as illustrated in FIG. 13, the bonding unit 90 may stop the voltage application to the lower chuck 201 after stopping the voltage application to the upper chuck 101.

  Further, as described above, it is preferable that the upper chuck 101 sets the residual adsorption force to 0 earlier than the lower chuck 201. Here, the residual attractive force tends to disappear earlier as the electrostatic attractive force at the time of voltage application is smaller. Therefore, the bonding unit 90 may set the electrostatic chucking force of the upper chuck 101 to be smaller than the electrostatic chucking force of the lower chuck 201. In other words, the upper chuck 101 may hold the substrate W to be processed with an electrostatic attraction force smaller than that of the lower chuck 201. Thus, the residual chucking force of the upper chuck 101 can be made zero earlier than that of the lower chuck 201 without shifting the voltage application stop timing of the upper chuck 101 and the lower chuck 201.

  Further, the timing for stopping the voltage application to the lower chuck 201 does not necessarily have to be before the end of the pressurizing process. Hereinafter, an example in which the voltage application to the lower chuck 201 is stopped after the pressurizing process is completed will be described with reference to FIG. FIG. 14 is a timing chart showing another example of the timing for stopping voltage application to the lower chuck 201.

  As shown in FIGS. 13 and 14, the bonding portion 90 is formed by the support pins 301 projecting after the substrate to be processed W and the support substrate S come into contact, and the overlapped substrate T is separated from the holding surface 213 of the lower chuck 201. However, the voltage application to the lower chuck 201 may be stopped within the previous period.

  Specifically, as shown in FIG. 14, the joining portion 90 has a lower chuck than the timing at which the superposed substrate T moves away from the holding surface 213 of the lower chuck 201 when the support pin 301 moves from the lowered position to the raised position. The voltage application to the lower chuck 201 may be stopped before the timing T7 before the residual adsorption force 201 disappears. Thereby, when the support pin 301 is raised, it is possible to prevent unnecessary force from being applied to the superposed substrate T due to the residual adsorption force of the lower chuck 201.

(Other embodiments)
In each of the embodiments described above, an example in which the residual chucking force of the upper chuck 101 and the lower chuck 201 is naturally lost has been described. However, the bonding unit 90 applies a reverse bias having a polarity opposite to that of electrostatic chucking to a residual charge amount. The residual charge may be positively eliminated by applying in accordance with the above.

  In addition, the joint 90 performs temporary bonding with a pressure lower than the desired pressure Pb (see FIG. 9), stops the voltage application to the upper chuck 101 and the lower chuck 201, and then performs the desired pressure. The main bonding may be performed with the pressure Pb.

  In each of the embodiments described above, the case where the first substrate is the target substrate W and the second substrate is the support substrate S has been described. However, the first substrate is the support substrate S, and the second substrate is the second substrate. The target substrate W may be used. That is, the support substrate S may be held by the upper chuck 101 and the target substrate W may be held by the lower chuck 201.

  In each of the above-described embodiments, the case where the pressurization mechanism 106 presses the substrate to be processed W and the support substrate S by lowering the upper chuck 101 has been described. Alternatively, the substrate to be processed W and the support substrate S may be brought into contact with each other and pressurized by raising the lower chuck 201.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W Substrate S Support substrate T Polymerized substrate 1 Bonding system 2 Loading / unloading station 4 Bonding station 5 Control device 6 Control unit 45 Bonding device 90 Bonding unit 101 Upper chuck 106 Pressure mechanism 111 Electrostatic adsorption unit 201 Lower chuck 211 Electrostatic Adsorption unit 501 Chamber 503 Decompression unit

Claims (9)

A chamber;
A first holding unit disposed in the chamber and holding the first substrate by electrostatic adsorption from above ;
A second holding unit disposed in the chamber and holding the second substrate from below by electrostatic adsorption ;
A support pin that can protrude from the holding surface of the second holding portion;
A decompression section for decompressing the inside of the chamber;
After the inside of the chamber is decompressed by the decompression unit, the first holding unit and the second holding unit are moved relatively to bring the first substrate and the second substrate into contact and pressurize. A pressure mechanism;
The voltage application to the first holding unit is performed within a period from when the first substrate and the second substrate are in contact to before the pressurizing process between the first substrate and the second substrate is completed. And a control unit to stop ,
The controller is
From the contact between the first substrate and the second substrate, the superposed substrate in which the support pins protrude and the first substrate and the second substrate are joined is separated from the holding surface of the second holding unit. In the bonding apparatus , the voltage application to the second holding unit is stopped within the previous period . The controller is
2. The bonding apparatus according to claim 1, wherein voltage application to the first holding unit is stopped within a period from when the pressurizing process is started to before the pressurizing process is completed. The controller is
The time until the residual adsorption force of the first holding part disappears and the time until the first holding part and the second holding part are relatively moved again after the pressurizing process is completed. 3. The bonding according to claim 1, wherein the voltage application to the first holding unit is stopped by a timing before the timing at which the pressurizing process is completed by an offset time determined based on the offset time. apparatus. The controller is
The second holding is performed before the timing at which the residual adsorption force of the second holding portion disappears before the timing at which the support pin protrudes and the overlapped substrate is separated from the holding surface of the second holding portion. The voltage application to a part is stopped. The joining device according to any one of claims 1 to 3 characterized by things. The controller is
Wherein after stopping the voltage application to the first holding portion, the bonding apparatus according to any one of claims 1 to 4, characterized in that stopping the voltage application to the second holding portion. The first holding part is
Joining apparatus according to any one of claims 1-5, characterized in that for holding the first substrate with a small electrostatic adsorption force than the second holding portion. The controller is
Joining apparatus according to any one of claims 1-6, characterized in gradually lowering the voltage applied to the first holding portion in said period. A loading / unloading station on which the first substrate and the second substrate are placed;
A substrate transfer device for transferring the first substrate and the second substrate placed on the loading / unloading station;
A bonding station where a bonding apparatus for bonding the first substrate and the second substrate transferred by the substrate transfer device is installed, and
The joining device includes:
A chamber;
A first holding unit disposed in the chamber and holding the first substrate by electrostatic adsorption from above ;
A second holding unit disposed in the chamber and holding the second substrate from below by electrostatic adsorption ;
A support pin that can protrude from the holding surface of the second holding portion;
A decompression section for decompressing the inside of the chamber;
After the inside of the chamber is decompressed by the decompression unit, the first holding unit and the second holding unit are moved relatively to bring the first substrate and the second substrate into contact and pressurize. A pressure mechanism;
The voltage application to the first holding unit is performed within a period from when the first substrate and the second substrate are in contact to before the pressurizing process between the first substrate and the second substrate is completed. And a control unit to stop ,
The controller is
From the contact between the first substrate and the second substrate, the superposed substrate in which the support pins protrude and the first substrate and the second substrate are joined is separated from the holding surface of the second holding unit. In the joining system , the voltage application to the second holding part is stopped within the previous period . Disposed in the chamber, with the first holding portion for holding the electrostatic adsorption of the first substrate from above, a first holding step of holding by electrostatic attraction to the first substrate from above,
Disposed in said chamber, a second holding step of the second substrate using a second holding portion for holding by electrostatic attraction from below, is held by electrostatic attraction to the second substrate from below,
A decompression step of decompressing the chamber;
After the chamber is depressurized by the depressurization step, the first substrate and the second substrate are brought into contact with each other and pressurized by relatively moving the first holding unit and the second holding unit. A pressing step;
The voltage application to the first holding unit is performed within a period from when the first substrate and the second substrate are in contact to before the pressurizing process between the first substrate and the second substrate is completed. A first voltage application stopping step to stop;
After the first substrate and the second substrate are in contact with each other, a superposed substrate in which a support pin that can protrude from the holding surface of the second holding unit protrudes and the first substrate and the second substrate are bonded to each other is provided. And a second voltage application stopping step of stopping voltage application to the second holding unit within a period before the separation from the holding surface of the second holding unit .

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