JP6467650B2 - Spherical boron nitride fine particles and production method thereof - Google Patents
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Description
本発明は、高熱伝導フィラーなどに好適な球状窒化ホウ素微粒子およびその製造方法に関する。 The present invention relates to spherical boron nitride fine particles suitable for high thermal conductive fillers and the like and a method for producing the same.
六方晶窒化ホウ素(以下、「窒化ホウ素」という)は、潤滑性、高熱伝導性、及び絶縁性等を有しており、固体潤滑剤、溶融ガスやアルミニウムなどの離形剤、及び放熱材料用充填材等に幅広く利用されている。
特に近年、コンピューターや電子機器の高性能化により、放熱対策の重要性が増しており、窒化ホウ素の高熱伝導性が注目されている。Hexagonal boron nitride (hereinafter referred to as “boron nitride”) has lubricity, high thermal conductivity, insulation, etc., for solid lubricants, mold release agents such as molten gas and aluminum, and heat dissipation materials Widely used for fillers.
Particularly in recent years, the importance of heat dissipation measures has increased due to the high performance of computers and electronic devices, and the high thermal conductivity of boron nitride has attracted attention.
近年、プリント配線板用樹脂基板、フレキシブル銅張積層板等の樹脂層に、高熱伝導性や絶縁性を付与させる目的で窒化ホウ素を添加することが検討されている。
一般的な窒化ホウ素の平均粒子径は、数μm〜20μmであるが、プリント配線板用樹脂基板やフレキシブル銅張積層板等の樹脂層の厚みには数十μm程度のものもあり、窒化ホウ素の平均粒子径が大きいと、樹脂への分散性が悪く、表面の平滑性が得られない、また、分散させた場合、ブツが発生し、樹脂層の強度を高く保つことができないことがあり、サブミクロンクラス(0.1μm)の窒化ホウ素微粒子が要求されている。In recent years, addition of boron nitride has been studied for the purpose of imparting high thermal conductivity and insulating properties to resin layers such as resin substrates for printed wiring boards and flexible copper-clad laminates.
The average particle diameter of general boron nitride is several μm to 20 μm, but the thickness of resin layers such as resin substrates for printed wiring boards and flexible copper-clad laminates is about several tens of μm. If the average particle size of the resin is large, the dispersibility in the resin is poor and the surface smoothness cannot be obtained. Submicron class (0.1 μm) boron nitride fine particles are required.
窒化ホウ素が高熱伝導性を示すには、高純度で、高結晶性である必要がある。これはサブミクロンクラス(0.1μm)の窒化ホウ素微粒子であっても変わらない。 In order for boron nitride to exhibit high thermal conductivity, it needs to be highly pure and highly crystalline. This does not change even with submicron class (0.1 μm) boron nitride fine particles.
一方、窒化ホウ素は、特徴的な鱗片形状であり、その熱特性は、長径もしくは短径方向の方が厚み方向に比べて圧倒的に優れている。そのため、例えば、窒化ホウ素をシリコーンなどの樹脂に充填した複合材料の熱特性は、複合材料中での窒化ホウ素微粒子の方向性に大きく影響を受ける。
しかしながら、例えば、シート形状の複合材料を作製した場合、多くの場合、窒化ホウ素微粒子は横方向に寝てしまい、縦方向に必要な充分な熱特性を示さない。On the other hand, boron nitride has a characteristic scaly shape, and its thermal characteristics are overwhelmingly superior in the major axis or minor axis direction compared to the thickness direction. Therefore, for example, the thermal characteristics of a composite material in which boron nitride is filled in a resin such as silicone are greatly influenced by the directionality of the boron nitride fine particles in the composite material.
However, for example, when a sheet-shaped composite material is produced, in many cases, the boron nitride fine particles lie down in the horizontal direction and do not exhibit sufficient thermal characteristics required in the vertical direction.
つまり窒化ホウ素が高熱伝導性フィラーとして好適であるためには、球形状、もしくは凝集形状にすることで、方向性の影響を小さくする必要がある。 In other words, in order for boron nitride to be suitable as a highly thermally conductive filler, it is necessary to reduce the influence of directionality by making it spherical or agglomerated.
窒化ホウ素は、一般的に、ホウ素源(ホウ酸、硼砂等)と窒素源(尿素、メラミン、及びアンモニアなど)を高温で反応させることで得られ、ホウ酸とメラミンから鱗片状の一次粒子が凝集した「松ぼっくり」状の窒化ホウ素が提案されている(特許文献1)。
しかしながら、この方法で作製された窒化ホウ素の凝集粒子径は50μm以上であり、本発明の目的のサブミクロンクラスの窒化ホウ素微粒子を作製するのは困難である。Boron nitride is generally obtained by reacting a boron source (boric acid, borax, etc.) and a nitrogen source (urea, melamine, ammonia, etc.) at a high temperature, and scaly primary particles are formed from boric acid and melamine. Aggregated “pine cone” boron nitride has been proposed (Patent Document 1).
However, the aggregated particle diameter of boron nitride produced by this method is 50 μm or more, and it is difficult to produce submicron-class boron nitride fine particles that are the object of the present invention.
一方、気相合成法により窒化ホウ素微粒子を得る方法が報告されている(特許文献2〜特許文献4)。
しかしながら、これらの方法で得られた窒化ホウ素微粒子は、結晶性が低いため、窒化ホウ素の特徴である潤滑性や高熱伝導性が不充分である。On the other hand, a method for obtaining boron nitride fine particles by a gas phase synthesis method has been reported (Patent Documents 2 to 4).
However, since the boron nitride fine particles obtained by these methods have low crystallinity, the lubricity and high thermal conductivity that are characteristic of boron nitride are insufficient.
本発明の目的は、球形度の高いサブミクロンの球状窒化ホウ素微粒子を提供することである。 An object of the present invention is to provide submicron spherical boron nitride fine particles having high sphericity.
本発明は、上記の課題を解決するために、以下の手段を採用する。
(1)平均粒子径0.01〜1.0μm、配向性指数1〜15、窒化ホウ素純度98.0質量%以上、及び平均円形度0.80以上であることを特徴とする球状窒化ホウ素微粒子である。
(2)アンモニア/ホウ酸アルコキシドのモル比1〜10のホウ酸アルコキシドとアンモニアを不活性ガス気流中、750℃以上、30秒以内で反応させた後、アンモニアガス、又は、アンモニアガスと不活性ガスの混合ガスの雰囲気下、1,000〜1,600℃、1時間以上で熱処理後、さらに、不活性ガス雰囲気下、1,800〜2,200℃、0.5時間以上で焼成することを特徴とする球状窒化ホウ素微粒子の製造方法である。The present invention employs the following means in order to solve the above problems.
(1) Spherical boron nitride fine particles having an average particle diameter of 0.01 to 1.0 μm, an orientation index of 1 to 15, a boron nitride purity of 98.0% by mass or more, and an average circularity of 0.80 or more.
(2) Ammonia / boric acid alkoxide boric acid alkoxide having a molar ratio of 1 to 10 and ammonia are reacted in an inert gas stream at 750 ° C. or more within 30 seconds, then ammonia gas or ammonia gas and inert Production of spherical boron nitride fine particles characterized by heat treatment at 1,000 to 1,600 ° C. for 1 hour or more in an atmosphere of a gas mixture and further firing at 1,800 to 2,200 ° C. for 0.5 hours or more in an inert gas atmosphere Is the method.
本発明によれば、球形度の高いサブミクロンの球状窒化ホウ素微粒子を提供することができる。 According to the present invention, submicron spherical boron nitride fine particles having a high sphericity can be provided.
本発明では、まず、不活性ガス気流中で、管状炉3を用いて、揮発したホウ酸アルコキシドと、アンモニアによる、いわゆる気相反応により、連続的に白色粉末を合成する(焼成条件1)。次に、この白色粉末を管状炉3(抵抗加熱炉)で焼成する(焼成条件2)。そして最後に、この焼成物を窒化ホウ素製のルツボに入れ、誘導加熱炉で焼成して窒化ホウ素微粒子を生成する(焼成条件3)。
なお、本発明における%は、特に断らない限り質量規準で示す。In the present invention, first, a white powder is continuously synthesized by a so-called gas phase reaction between volatilized boric acid alkoxide and ammonia in an inert gas stream using a tubular furnace 3 (firing condition 1). Next, this white powder is fired in a tubular furnace 3 (resistance heating furnace) (firing condition 2). Finally, the fired product is placed in a boron nitride crucible and fired in an induction heating furnace to produce boron nitride fine particles (firing condition 3).
In the present invention, “%” is based on a mass standard unless otherwise specified.
本発明においては、上記のとおり、焼成条件が3段階あり、その焼成条件の温度が低い順に、焼成条件1:750℃以上、焼成条件2:1,000〜1,600℃、及び焼成条件3:1,800〜2,200℃とし、焼成条件1、2については、管状炉3として、抵抗加熱方式を用い、焼成条件3については、管状炉3として、誘導加熱方式の電気炉を用いることができる。もちろん焼成条件1、2において誘導加熱方式の電気炉を用いても問題はない。 In the present invention, as described above, there are three firing conditions, and the firing conditions are in order of increasing temperature: firing condition 1: 750 ° C. or higher, firing condition 2: 1,000 to 1,600 ° C., and firing condition 3: 1,800 to 2,200. With respect to firing conditions 1 and 2, a resistance heating method can be used as the tubular furnace 3, and an induction heating type electric furnace can be used as the tubular furnace 3 as the firing condition 3. Of course, there is no problem even if an induction heating type electric furnace is used in firing conditions 1 and 2.
以下、本発明を、図を用いて説明する。 Hereinafter, the present invention will be described with reference to the drawings.
焼成条件1で使用する窒化ホウ素微粒子の製造装置は、管状炉3(抵抗加熱炉)、反応管(石英管)2、ホウ酸アルコキシドの容器1、ホウ酸アルコキシドの導入管4、アンモニアガスの導入管5、及びサンプルの回収容器6などからなるものである。 The apparatus for producing boron nitride fine particles used in firing condition 1 includes a tubular furnace 3 (resistance heating furnace), a reaction tube (quartz tube) 2, a borate alkoxide container 1, a borate alkoxide introduction tube 4, and introduction of ammonia gas. It consists of a tube 5 and a sample collection container 6.
本発明の球状窒化ホウ素微粒子は、揮発したホウ酸アルコキシドと、アンモニアによる、いわゆる気相反応により連続的に合成する。そのため連続的な合成が可能な装置が必要であり、焼成条件1では、例えば、図1に例示される管状炉3を用いた装置を用いることが好ましい。 The spherical boron nitride fine particles of the present invention are continuously synthesized by a so-called gas phase reaction between volatilized boric alkoxide and ammonia. For this reason, an apparatus capable of continuous synthesis is required, and in firing condition 1, for example, an apparatus using a tubular furnace 3 illustrated in FIG. 1 is preferably used.
管状炉3は特に限定されるものではないが、取り扱いが容易な電気炉を用いることが好ましい。 The tubular furnace 3 is not particularly limited, but it is preferable to use an electric furnace that is easy to handle.
電気炉は、通電により炉を構成する発熱体等を発熱させ、炉内を加温することが基本原理であり、加熱方式や発熱体の材質で細分化される。
一般的に、1,700℃付近までの加熱は、発熱体を用いた抵抗加熱方式で可能であるが、2,000℃付近の加熱は、コイルを用いた誘導加熱方式が必要となる。
なお発熱体の材質には、炭化ケイ素やカーボンなどが用いられるが特に限定されるものではない。The basic principle of an electric furnace is to heat a heating element or the like constituting the furnace by energization to heat the inside of the furnace, and the electric furnace is subdivided according to the heating method and the material of the heating element.
In general, heating up to around 1,700 ° C. is possible by a resistance heating method using a heating element, but heating around 2,000 ° C. requires an induction heating method using a coil.
In addition, although silicon carbide, carbon, etc. are used for the material of a heat generating body, it is not specifically limited.
本発明で使用する反応管2の材質は特に限定されるものではないが、化学的に安定で耐熱性が良好なアルミナや石英を用いることが好ましい。 The material of the reaction tube 2 used in the present invention is not particularly limited, but it is preferable to use alumina or quartz that is chemically stable and has good heat resistance.
以下、反応管2として石英管を用い、ホウ酸アルコキシドとして、ホウ酸トリメチルを使用した焼成条件1の概要を図1に基づいて説明する。 Hereinafter, an outline of firing condition 1 using a quartz tube as the reaction tube 2 and trimethyl borate as the borate alkoxide will be described with reference to FIG.
抵抗加熱炉3に石英管2を設置し、加熱して所定の温度まで昇温する。ホウ酸トリメチルを容器1に入れ、窒素により、導入管4を経由して石英管2に導入する。一方、アンモニアも、導入管5を経由して石英管2に導入する。導入したホウ酸トリメチルとアンモニアは加熱された石英管2内で反応し、白色粉末が生成する(焼成条件1)。生成した白色粉末は、一部は石英管2内に付着するが、多くは窒素や未反応のアンモニアにより回収容器6に輸送される。生成物である白色粉末(生成物7)はこの回収容器6より回収される。 The quartz tube 2 is installed in the resistance heating furnace 3 and heated to a predetermined temperature. Trimethyl borate is put in the container 1 and introduced into the quartz tube 2 through the introduction tube 4 by nitrogen. On the other hand, ammonia is also introduced into the quartz tube 2 via the introduction tube 5. The introduced trimethyl borate and ammonia react in the heated quartz tube 2 to produce white powder (firing condition 1). Part of the generated white powder adheres to the quartz tube 2, but most of it is transported to the recovery container 6 by nitrogen or unreacted ammonia. A white powder (product 7) as a product is recovered from the recovery container 6.
管状炉3の温度は、750℃以上が好ましい。750℃より低いと生成する窒化ホウ素微粒子の平均粒子径が1.0μmより大きくなる場合がある。 The temperature of the tubular furnace 3 is preferably 750 ° C. or higher. When the temperature is lower than 750 ° C., the average particle diameter of the boron nitride fine particles to be generated may be larger than 1.0 μm.
ホウ酸トリメチルとアンモニアとの反応は30秒以内で終了する。30秒を超えると、窒化ホウ素微粒子の平均粒子径が1.0μmより大きくなる場合がある。 The reaction between trimethyl borate and ammonia is completed within 30 seconds. If it exceeds 30 seconds, the average particle diameter of the boron nitride fine particles may be larger than 1.0 μm.
本発明で使用するホウ酸アルコキシドとしては、ホウ酸トリメチル、ホウ酸トリエチル、及びホウ酸トリイソプロピルなどを用いることができるが、アンモニアとの反応のし易さや入手の容易さから、ホウ酸トリメチルを用いることが好ましい。ホウ酸トリメチルとしては、各社試薬の他に多摩化学工業社製商品名「TMB」などがある。 As the boric acid alkoxide used in the present invention, trimethyl borate, triethyl borate, triisopropyl borate, and the like can be used. It is preferable to use it. As trimethyl borate, there is a trade name “TMB” manufactured by Tama Chemical Industry Co., Ltd. in addition to the reagents of each company.
一方、本発明で使用するアンモニアは特に限定されるものではないが、不純物を含まない、いわゆる「高純度」タイプのものが好ましい。 On the other hand, the ammonia used in the present invention is not particularly limited, but a so-called “high purity” type containing no impurities is preferable.
不活性ガスとしては特に限定されるものではないが、化学反応を起こしにくいガスで、例えば、ヘリウム、ネオン、及びアルゴンなどの希ガスや窒素などが挙げられる。 Although it does not specifically limit as an inert gas, It is a gas which is hard to raise | generate a chemical reaction, For example, noble gases, such as helium, neon, and argon, nitrogen, etc. are mentioned.
ホウ酸アルコキシドとアンモニアの配合割合は、アンモニア/ホウ酸アルコキシドのモル比で1〜10である。アンモニア/ホウ酸アルコキシドのモル比が1未満では、窒化ホウ素微粒子の純度が98.0%より低くなる場合があり、モル比が10より大きくなると、窒化ホウ素微粒子の平均粒子径が0.01μmより小さくなる場合がある。 The mixing ratio of boric alkoxide and ammonia is 1 to 10 in terms of a molar ratio of ammonia / boric acid alkoxide. When the ammonia / boric acid alkoxide molar ratio is less than 1, the purity of the boron nitride fine particles may be lower than 98.0%, and when the molar ratio is higher than 10, the average particle diameter of the boron nitride fine particles is smaller than 0.01 μm. There is.
ホウ酸アルコキシドとアンモニアの導入を止め、管状炉3の電源を切り、焼成条件1で合成した白色粉末を回収し、例えば、図2に示す装置で、焼成条件2の焼成を行う。 The introduction of the boric acid alkoxide and ammonia is stopped, the power source of the tubular furnace 3 is turned off, and the white powder synthesized under the firing condition 1 is collected, and the firing is performed under the firing condition 2 using, for example, the apparatus shown in FIG.
焼成条件2で使用する装置は、抵抗加熱炉3’に、反応管2’としてアルミナ管を使用し、反応管の中心に焼成条件1で合成した白色粉末(生成物7)を充填し、抵抗加熱炉3’にセットした後、導入管4'から窒素を、導入管5’からアンモニアを導入した。所定温度まで昇温した後、所定時間焼成する。焼成終了後、抵抗加熱炉3’を冷却し、焼成物を回収する。
焼成条件2では、誘導加熱炉を用いることも可能である。The apparatus used under the firing condition 2 uses an alumina tube as the reaction tube 2 ′ in the resistance heating furnace 3 ′, and fills the center of the reaction tube with the white powder (product 7) synthesized under the firing condition 1, After setting in the heating furnace 3 ′, nitrogen was introduced from the introduction pipe 4 ′ and ammonia was introduced from the introduction pipe 5 ′. After raising the temperature to a predetermined temperature, baking is performed for a predetermined time. After firing, the resistance heating furnace 3 'is cooled and the fired product is recovered.
In firing condition 2, it is also possible to use an induction heating furnace.
抵抗加熱炉3の温度は、1,000〜1,600℃である。この範囲外では、窒化ホウ素微粒子の配向性指数が15より大きくなる場合がある。 The temperature of the resistance heating furnace 3 is 1,000 to 1,600 ° C. Outside this range, the orientation index of boron nitride fine particles may be greater than 15.
焼成条件2の反応時間は、1時間以上である。1時間未満では、窒化ホウ素微粒子の配向性指数が15より大きくなる場合があり、窒化ホウ素微粒子は鱗片形状で円形度が低い場合がある。 The reaction time of the firing condition 2 is 1 hour or more. If it is less than 1 hour, the orientation index of the boron nitride fine particles may be larger than 15, and the boron nitride fine particles may have a scale shape and low circularity.
焼成条件2の雰囲気は、アンモニアガス、又は、アンモニアガスと不活性ガスの混合ガスの雰囲気が好ましい。アンモニアガスが存在しないと、窒化ホウ素微粒子は、配向性指数が15より大きくなる場合や、純度が98.0%より低くなる場合や、鱗片形状で平均円形度が低い場合がある。 The atmosphere of the firing condition 2 is preferably an atmosphere of ammonia gas or a mixed gas of ammonia gas and inert gas. In the absence of ammonia gas, the boron nitride fine particles may have an orientation index greater than 15, a purity of less than 98.0%, or a scale shape with a low average circularity.
焼成条件2の反応が終了した後、電気炉の電源を切り、窒素やアンモニアの導入を停止し、冷却する。 After the reaction under the firing condition 2 is completed, the electric furnace is turned off, and the introduction of nitrogen and ammonia is stopped and cooled.
焼成条件2で焼成した焼成物を、窒化ホウ素製ルツボに入れ、誘導加熱炉で窒素雰囲気下、所定温度で焼成する焼成条件3でさらに焼成する。
なお焼成温度が2,000℃前後と高温のため、焼成炉として誘導加熱炉を用いることが好ましい。The fired product fired under firing condition 2 is placed in a boron nitride crucible and further fired under firing condition 3 in which it is fired at a predetermined temperature in a nitrogen atmosphere in an induction heating furnace.
Since the firing temperature is as high as about 2,000 ° C., it is preferable to use an induction heating furnace as the firing furnace.
焼成条件3における温度は、1,800〜2,200℃である。1,800℃より低いと窒化ホウ素微粒子の純度が98.0%より低くなる場合があり、2,200℃より高いと窒化ホウ素微粒子が崩壊する場合がある。 The temperature in firing condition 3 is 1,800 to 2,200 ° C. If it is lower than 1,800 ° C., the purity of the boron nitride fine particles may be lower than 98.0%, and if it is higher than 2,200 ° C., the boron nitride fine particles may be collapsed.
焼成条件3における反応時間は0.5時間以上である。0.5時間未満では窒化ホウ素微粒子の純度が98.0%より低くなる場合がある。 The reaction time in the firing condition 3 is 0.5 hour or more. If it is less than 0.5 hour, the purity of the boron nitride fine particles may be lower than 98.0%.
本発明で生成する窒化ホウ素微粒子の平均粒子径は、0.05〜1.0μmである。この範囲外では、樹脂への分散性が悪く、表面の平滑性が得られない、また、分散させた場合、ブツが発生し、樹脂層の強度を高く保つことができないことがある。 The average particle diameter of the boron nitride fine particles produced in the present invention is 0.05 to 1.0 μm. Outside this range, the dispersibility in the resin is poor and the surface smoothness cannot be obtained, and when dispersed, there is a problem that the resin layer cannot be kept high in strength.
また、本発明で生成する窒化ホウ素微粒子の配向性指数は、粉末X線回折法による(002)面の回折線の強度I002と(100)面の回折線の強度I100との比(I002/I100)で示され、高熱伝導性を得る面から、1〜15である。The alignment index of boron nitride particles produced in the present invention, the ratio of the intensity I 100 of the by powder X-ray diffraction (002) plane and intensity I 002 of diffraction line (100) plane of the diffraction line (I 002 / I 100 ), and 1 to 15 from the viewpoint of obtaining high thermal conductivity.
本発明で生成する窒化ホウ素微粒子の窒化ホウ素純度は、高熱伝導性を得る面から、98.0%以上である。 The boron nitride purity of the boron nitride fine particles produced in the present invention is 98.0% or more from the viewpoint of obtaining high thermal conductivity.
本発明で生成する窒化ホウ素微粒子の平均円形度は、高熱伝導性を得る面から、0.80以上である。 The average circularity of the boron nitride fine particles produced in the present invention is 0.80 or more from the viewpoint of obtaining high thermal conductivity.
以下、実験例に基づき本発明をさらに説明する。 Hereinafter, the present invention will be further described based on experimental examples.
実験例1
焼成条件1
石英管2を抵抗加熱炉3に設置し、所定温度に加熱する。ホウ酸トリメチルを容器1に入れ、窒素により導入管4を経由して石英管2に導入した。一方、アンモニアも導入管5を経由して石英管2に導入した。導入されたホウ酸トリメチルとアンモニアは加熱された石英管2内で反応し、白色粉末を生成した。生成した白色粉末(生成物)を回収容器6より回収した。Experimental example 1
Firing condition 1
The quartz tube 2 is placed in a resistance heating furnace 3 and heated to a predetermined temperature. Trimethyl borate was placed in the container 1 and introduced into the quartz tube 2 via the introduction tube 4 with nitrogen. On the other hand, ammonia was also introduced into the quartz tube 2 via the introduction tube 5. The introduced trimethyl borate and ammonia reacted in the heated quartz tube 2 to produce a white powder. The generated white powder (product) was recovered from the recovery container 6.
焼成条件2
焼成条件1で回収した白色粉末を図2に示す装置で焼成した。
アルミナ管2’の中心に焼成条件1で回収した白色粉末(生成物)を充填し、抵抗加熱炉3’にセットした後、導入管4’、5’より窒素、アンモニアをそれぞれ導入した。表1に示す所定温度まで昇温した後に所定時間焼成し、焼成終了後、冷却し、焼成物を回収した。Firing condition 2
The white powder recovered under firing condition 1 was fired with the apparatus shown in FIG.
The white powder (product) collected under the firing condition 1 was filled in the center of the alumina tube 2 ′ and set in the resistance heating furnace 3 ′, and then nitrogen and ammonia were introduced from the introduction tubes 4 ′ and 5 ′, respectively. After heating up to the predetermined temperature shown in Table 1, it baked for the predetermined time, after completion | finish of baking, it cooled and collect | recovered baked products.
焼成条件3
焼成条件2で得られた焼成物を窒化ホウ素製ルツボに入れ、誘導加熱炉で窒素雰囲気下、表1に示す所定温度で焼成した。得られた窒化ホウ素微粒子の平均粒子径、配向性指数、窒化ホウ素純度、及び平均円形度を測定した。結果を表1に示す。
なお、焼成条件1、2、及び3の温度、時間、及び焼成雰囲気を各々焼成条件1、2、及び3に併記した。
また、本発明の実施例の電子顕微鏡写真を図3に、比較例の電子顕微鏡写真を図4に示す。Firing condition 3
The fired product obtained under firing condition 2 was placed in a boron nitride crucible and fired at a predetermined temperature shown in Table 1 in an induction heating furnace in a nitrogen atmosphere. The average particle diameter, orientation index, boron nitride purity, and average circularity of the obtained boron nitride fine particles were measured. The results are shown in Table 1.
The temperature, time, and firing atmosphere of firing conditions 1, 2, and 3 are also shown in firing conditions 1, 2, and 3, respectively.
Moreover, the electron micrograph of the Example of this invention is shown in FIG. 3, and the electron micrograph of a comparative example is shown in FIG.
<使用材料>
ホウ酸トリメチル:和光純薬工業社製試薬、トリメトキシボラン
アンモニア:高純度タイプ市販品<Materials used>
Trimethyl borate: Reagents manufactured by Wako Pure Chemical Industries, Ltd. Trimethoxyborane ammonia: High purity type commercial product
<測定方法>
平均粒子径:平均粒子径の測定にはコールター製レーザー回折散乱法粒度分布測定装置、商品名「LS−230」を用いた。
配向性指数:X線回折装置(理学電機社製「Geiger Flex 2013型」)にて2θ=30°〜25°の範囲で測定し、2θ=27〜28°付近((002)面)の回折線の強度I002、2θ=41°付近((100)面)の回折線の強度I100を求めた。配向性指数は窒化ホウ素のX線回折のピーク強度比より、配向性指数=I002/I100で算出した。
窒化ホウ素純度:窒化ホウ素純度は次の方法により求めた。試料を水酸化ナトリウムでアルカリ分解後、水蒸気蒸留法によってアンモニアを蒸留し、これをホウ酸液に捕集した。この捕集液を硫酸規定液で滴定し、窒素量(N)を求めた後、以下の式より窒化ホウ素純度(BN)を算出した。
BN(%)=N(%)×1.772
平均円形度:走査型電子顕微鏡(SEM)もしくは透過型電子顕微鏡(TEM)で粒子像を撮影した後、画像解析(例えば、マウンテック社製、商品名「MacView」)を用いて粒子の投影面積(S)と周囲長(L)を測定した。円形度は以下の式で求めた。
円形度=4πS/L2
任意に選んだ100個の粒子について円形度を測定し、それらの平均値を該試料の平均円形度とした。<Measurement method>
Average particle diameter: For measurement of the average particle diameter, a laser diffraction scattering particle size distribution measuring device manufactured by Coulter, trade name “LS-230” was used.
Orientation index: measured by X-ray diffractometer (“Geiger Flex 2013” manufactured by Rigaku Corporation) in the range of 2θ = 30 ° to 25 °, and diffraction around 2θ = 27-28 ° ((002) plane) The line intensity I 002 and the intensity I 100 of the diffraction line near 2θ = 41 ° ((100) plane) were determined. The orientation index was calculated from the peak intensity ratio of X-ray diffraction of boron nitride, with the orientation index = I 002 / I 100 .
Boron nitride purity: Boron nitride purity was determined by the following method. After alkali decomposition of the sample with sodium hydroxide, ammonia was distilled by a steam distillation method and collected in a boric acid solution. The collected liquid was titrated with a sulfuric acid normal solution to determine the amount of nitrogen (N), and then boron nitride purity (BN) was calculated from the following formula.
BN (%) = N (%) × 1.772
Average circularity: After taking a particle image with a scanning electron microscope (SEM) or a transmission electron microscope (TEM), the projected area of the particle (for example, product name “MacView” manufactured by Mountec Co., Ltd.) S) and the perimeter (L) were measured. The circularity was determined by the following formula.
Circularity = 4πS / L 2
The circularity of 100 arbitrarily selected particles was measured, and the average value thereof was taken as the average circularity of the sample.
1 ホウ酸アルコキシドの容器
2 反応管(石英管)
2' 反応官(アルミナ管)
3、3’ 管状炉(抵抗加熱炉)
4 ホウ酸アルコキシドの導入管
4' 窒素の導入管
5、5’ アンモニアガスの導入管
6 サンプルの回収容器
7 生成物1 Boric alkoxide container 2 Reaction tube (quartz tube)
2 'Reactor (Alumina tube)
3, 3 'tubular furnace (resistance heating furnace)
4 Boric acid alkoxide introduction tube 4 'Nitrogen introduction tube 5, 5' Ammonia gas introduction tube 6 Sample collection vessel 7 Product
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| JP2015193504A (en) * | 2014-03-31 | 2015-11-05 | ナガセケムテックス株式会社 | Boron nitride particles, resin composition and heat conductive sheet |
| KR102560615B1 (en) * | 2015-08-26 | 2023-07-27 | 덴카 주식회사 | Thermally conductive resin composition |
| CN109476480A (en) * | 2016-05-27 | 2019-03-15 | 圣戈本陶瓷及塑料股份有限公司 | Method for making boron nitride agglomerates |
| JP7037494B2 (en) * | 2016-10-21 | 2022-03-16 | デンカ株式会社 | Spherical boron nitride fine powder, its production method and a heat conductive resin composition using it |
| JP7040529B2 (en) * | 2017-09-04 | 2022-03-23 | 東亞合成株式会社 | Compositions for powder coatings and coated articles |
| WO2019073690A1 (en) * | 2017-10-13 | 2019-04-18 | デンカ株式会社 | Boron nitride powder, method for producing same, and heat-dissipating member produced using same |
| CN112334408B (en) * | 2018-06-29 | 2023-10-10 | 电化株式会社 | Massive boron nitride particles, boron nitride powder, manufacturing method of boron nitride powder, resin composition, and heat dissipation member |
| US20210163288A1 (en) | 2018-08-07 | 2021-06-03 | Denka Company Limited | Hexagonal boron nitride powder and method for producing hexagonal boron nitride powder |
| US20220204830A1 (en) | 2019-03-28 | 2022-06-30 | Denka Company Limited | Boron nitride powder, method for producing same, composite material, and heat dissipation member |
| CN112295535A (en) * | 2019-07-31 | 2021-02-02 | 东泰高科装备科技有限公司 | Boron nitride adsorbing material and synthesis method and synthesis device thereof |
| CN114514195A (en) | 2019-10-23 | 2022-05-17 | 电化株式会社 | Boron nitride powder and method for producing same, boron carbonitride powder, composite material, and heat-dissipating member |
| CN114466818A (en) | 2019-11-19 | 2022-05-10 | 电化株式会社 | Hexagonal boron nitride powder |
| CN114599604B (en) * | 2019-11-21 | 2024-09-27 | 电化株式会社 | Boron nitride particles and resin composition |
| TWI874495B (en) * | 2019-11-21 | 2025-03-01 | 日商電化股份有限公司 | Boron nitride particles and resin composition |
| JP7571046B2 (en) * | 2019-12-06 | 2024-10-22 | デンカ株式会社 | Boron nitride particles and manufacturing method thereof |
| CN114667267B (en) * | 2019-12-06 | 2024-09-13 | 电化株式会社 | Boron nitride particles and method for producing same |
| JP7571122B2 (en) * | 2020-03-26 | 2024-10-22 | デンカ株式会社 | Boron nitride particles, and resin composition and container containing the boron nitride particles |
| WO2021193028A1 (en) * | 2020-03-27 | 2021-09-30 | パナソニックIpマネジメント株式会社 | Resin composition for molding and electronic device |
| TWI766320B (en) * | 2020-07-23 | 2022-06-01 | 南亞塑膠工業股份有限公司 | Prepreg and metallic clad laminate |
| JP7641568B2 (en) * | 2021-05-28 | 2025-03-07 | パナソニックIpマネジメント株式会社 | Resin composition and semiconductor device |
| CN113753866B (en) * | 2021-08-03 | 2023-02-07 | 湖南大学 | A kind of hexagonal boron nitride nanocrystal and solid phase preparation method thereof |
| CN114132904B (en) * | 2021-12-06 | 2023-04-25 | 湖南大学 | Hexagonal boron nitride porous microsphere with high oil absorption and whitening effects for cosmetics |
| JP7733803B2 (en) * | 2022-02-22 | 2025-09-03 | デンカ株式会社 | Method for manufacturing boron nitride powder, boron nitride powder and resin sealing material |
| CN120187665A (en) * | 2022-11-14 | 2025-06-20 | 电化株式会社 | Spherical boron nitride powder, filler for resin, resin composition and method for producing spherical boron nitride powder |
| KR20240077615A (en) | 2022-11-24 | 2024-06-03 | 한국전자기술연구원 | Method for producing spherical boron nitride particles, spherical boron nitride prepared thereby, thermally conductive composite comprising the same, and method for producing the same |
| CN116177500A (en) * | 2023-01-11 | 2023-05-30 | 南方科技大学 | A kind of spherical boron nitride particle and preparation method thereof |
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| JP3647079B2 (en) * | 1995-04-19 | 2005-05-11 | 電気化学工業株式会社 | Method for producing hexagonal boron nitride powder |
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| US6348179B1 (en) | 1999-05-19 | 2002-02-19 | University Of New Mexico | Spherical boron nitride process, system and product of manufacture |
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