JP6509138B2 - Electrode built-in ceramic sintered body and method for manufacturing the same - Google Patents
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Description
本発明は、半導体製造装置に使用される静電チャック電極、ヒータ電極もしくはプラズマ電極、又はこれらの組み合わせ等、一又は複数の電極が内蔵されているセラミックス焼結体及びその製造方法に関する。 The present invention relates to a ceramic sintered body in which one or a plurality of electrodes such as an electrostatic chuck electrode, a heater electrode or a plasma electrode used in a semiconductor manufacturing apparatus, or a combination thereof is incorporated, and a method of manufacturing the same.
電極内蔵セラミックス焼結体の製法として、成形体の上に多数の小さな貫通孔を形成した板状のパンチングメタル電極と、他の成形体又は粉末を順に重ねたうえで、当該成形体又は当該成形体及び粉末を当該重ね方向に加圧焼成する手法が提案されている（特許文献１参照）。この手法では、パンチングメタル電極に形成した多数の小さな貫通孔内の部分を介してセラミックス焼結体が一体化される。 As a method for producing an electrode-embedded ceramic sintered body, a plate-like punching metal electrode in which a large number of small through holes are formed on a formed body, and another formed body or powder are sequentially stacked. A method has been proposed in which a body and a powder are pressurized and fired in the stacking direction (see Patent Document 1). In this method, the ceramic sintered body is integrated through portions in many small through holes formed in the punching metal electrode.
パンチングメタル電極に形成した多数の小さな貫通孔内の部分を介してセラミックス焼結体が一体化されるので、セラミックス焼結体の一体化を確実とするために、パンチングメタル電極は左程厚くできず２ｍｍ以下であった。 Since the ceramic sintered body is integrated through portions in many small through holes formed in the punching metal electrode, in order to ensure integration of the ceramic sintered body, the punching metal electrode can be made thicker toward the left It was less than 2 mm.
しかしながら、パンチングメタル電極は、平板形状であるため伸縮性に乏しく、反り等の変形が発生し易いという問題があった。 However, since the punching metal electrode has a flat plate shape, it has poor stretchability and there is a problem that deformation such as warpage is easily generated.
そこで、パンチングメタル電極の厚さを厚くすることが考えられる。しかし、このように厚くすると、セラミックス焼結体の一体化の確実性が劣り、剥離が生じ易くなる。そこで、パンチングメタル電極に形成する多数の小さな貫通孔の孔径を大きくすることが考えられる。しかし、孔径を大きくすると、電極の総面積が減少し、吸着力が低下する。 Therefore, it is conceivable to increase the thickness of the punching metal electrode. However, when the thickness is increased in this manner, the reliability of the integration of the ceramic sintered bodies is inferior, and the peeling tends to occur. Therefore, it is conceivable to increase the diameter of many small through holes formed in the punching metal electrode. However, if the pore size is increased, the total area of the electrode decreases and the adsorptive power decreases.
本発明は、かかる事情に鑑みてなされたものであり、電極の総面積を確保したうえで、反り等の変形が生じ難く、且つ剥離の抑制を図り得る電極内蔵セラミックス焼結体及びその製造方法を提供することを目的とする。 The present invention has been made in view of such circumstances, and it is difficult for deformation such as warpage to occur while securing the total area of the electrode, and an electrode-embedded ceramic sintered body capable of suppressing peeling and a method of manufacturing the same Intended to provide.
本発明の電極内蔵セラミックス焼結体は、平面電極が内蔵され、且つ、前記平面電極の厚み方向に貫通する貫通孔が形成されている電極内蔵セラミックス焼結体であって、前記平面電極には、前記貫通孔の一部を構成する第１の貫通孔、及び前記第１の貫通孔以外の前記厚み方向に貫通する複数の第２の貫通孔が形成されており、前記第２の貫通孔内の部分を介して前記平面電極の法線方向両方向の前記セラミックス焼結体が一体化されており、前記平面電極は、前記第１の貫通孔を取り囲む領域を少なくとも含む第１の領域と前記第１の領域以外の領域である第２の領域とに区別され、前記第１の領域における当該平面電極の面積に対する当該第１の領域内に存在する前記第２の貫通孔が占める総面積の割合が、前記第２の領域における当該平面電極の面積に対する当該第２の領域内に存在する前記第２の貫通孔が占める総面積の割合よりも大きいことを特徴とする。 The electrode-embedded ceramic sintered body according to the present invention is an electrode-embedded ceramic sintered body in which a flat electrode is embedded and a through hole penetrating in the thickness direction of the flat electrode is formed. A first through-hole constituting a part of the through-hole, and a plurality of second through-holes penetrating in the thickness direction other than the first through-hole are formed, and the second through-hole is formed. The ceramic sintered body of both directions normal to the planar electrode is integrated through an inner portion, and the planar electrode includes a first region including at least a region surrounding the first through hole and the first region. The total area occupied by the second through holes present in the first area with respect to the area of the planar electrode in the first area is distinguished from the second area which is the area other than the first area. The ratio is the same as in the second region. It is larger than the ratio of the total area occupied by the second through holes present in the relative area of the planar electrode and the second region.
本発明の電極内蔵セラミックス焼結体によれば、第２の領域と比較して外部からの応力が作用し易くセラミックス焼結体と平面電極との剥離が生じ易い第１の領域において、第２の領域と比較して第２の貫通孔の占める割合が大きい。これにより、第２の貫通孔の数の増加の抑制を図りながら、セラミックス焼結体の強固な一体化を図ることが可能となる。 According to the electrode-embedded ceramic sintered body of the present invention, the second region is more susceptible to external stress than the second region in the first region in which peeling between the ceramic sintered body and the planar electrode is likely to occur. The proportion of the second through holes is large compared to the area of. This makes it possible to achieve firm integration of the ceramic sintered body while suppressing the increase in the number of second through holes.
本発明の電極内蔵セラミックス焼結体において、前記第１の領域は、前記平面電極の外周縁領域を含むことが好ましい。 In the electrode-embedded ceramic sintered body of the present invention, the first region preferably includes an outer peripheral region of the planar electrode.
この場合、第１の領域に、平面電極の外周縁領域が含まれる。これにより、第２の領域と比較して外部からの応力が作用し易くセラミックス焼結体と平面電極との剥離が生じ易い前記領域においても、第２の領域と比較して第２の貫通孔の占める割合が大きい。これにより、さらに、第２の貫通孔の数の増加の抑制を図りながら、セラミックス焼結体の強固な一体化を図ることが可能となる。 In this case, the first region includes the outer peripheral region of the flat electrode. As a result, the stress from the outside is more likely to be applied compared to the second region, and the second through hole is also compared to the second region even in the above region where separation between the ceramic sintered body and the planar electrode is likely to occur. The proportion of is large. As a result, it is possible to achieve firm integration of the ceramic sintered body while further suppressing the increase in the number of second through holes.
また、本発明の電極内蔵セラミックス焼結体において、前記平面電極に接続された給電端子を備え、前記第１の領域は、前記平面電極と前記給電端子とが接続される部分を取り囲む領域を含むことが好ましい。 Further, in the electrode-embedded ceramic sintered body according to the present invention, a feed terminal connected to the flat electrode is provided, and the first region includes a region surrounding a portion where the flat electrode and the feed terminal are connected. Is preferred.
この場合、第１の領域に、平面電極と給電端子とが接続される部分を取り囲む領域が含まれる。これにより、第２の領域と比較して外部からの応力が作用し易くセラミックス焼結体と平面電極との剥離が生じ易い前記部分においても、第２の領域と比較して第２の貫通孔の占める割合が大きい。これにより、さらに、第２の貫通孔の数の増加の抑制を図りながら、セラミックス焼結体の強固な一体化を図ることが可能となる。 In this case, the first area includes an area surrounding a portion where the flat electrode and the feeding terminal are connected. As a result, the stress from the outside is more likely to act compared to the second region, and the second through hole compared to the second region also in the portion where peeling between the ceramic sintered body and the planar electrode is likely to occur. The proportion of is large. As a result, it is possible to achieve firm integration of the ceramic sintered body while further suppressing the increase in the number of second through holes.
また、本発明の電極内蔵セラミックス焼結体において、前記平面電極の厚さは０．１ｍｍを超えることが好ましい。 Moreover, in the electrode-embedded ceramic sintered body of the present invention, the thickness of the flat electrode is preferably more than 0.1 mm.
この場合、平面電極の厚さが０．１ｍｍを超えるので、平面電極の厚さが０．１ｍｍ以下の従来の場合と比較して、平面電極に反り等の変形が生じ難い。 In this case, since the thickness of the flat electrode exceeds 0.1 mm, deformation such as warpage is less likely to occur in the flat electrode compared to the conventional case where the thickness of the flat electrode is 0.1 mm or less.
本発明の電極内蔵セラミックス焼結体の製造方法は、平面電極が内蔵され、且つ、前記平面電極の厚み方向に貫通する貫通孔が形成されている電極内蔵セラミックス焼結体の製造方法であって、前記貫通孔の一部となる第１の貫通孔と、前記第１の貫通孔以外の前記厚み方向に貫通する複数の第２の貫通孔が形成された前記平面電極を用意する工程と、前記平面電極を間に挟むように複数のセラミックス成形体を前記厚さ方向に重ねる、又は、前記平面電極を一のセラミックス成形体に埋設する工程と、前記複数のセラミックス成形体又は前記一のセラミックス成形体を前記厚さ方向について加圧しながら焼成する工程とを含み、前記平面電極は、前記第１の貫通孔を取り囲む領域を少なくとも含む第１の領域と前記第１の領域以外の領域である第２の領域とに区別され、前記第１の領域における当該平面電極の面積に対する当該第１の領域内に存在する前記第２の貫通孔が占める総面積の割合が、前記第２の領域における当該平面電極の面積に対する当該第２の領域内に存在する前記第２の貫通孔が占める総面積の割合よりも大きいことを特徴とする。 The method for producing an electrode-embedded ceramic sintered body according to the present invention is a method for producing an electrode-embedded ceramic sintered body, wherein a flat electrode is embedded and a through hole penetrating in the thickness direction of the flat electrode is formed. Providing the first through-hole to be a part of the through-hole and the planar electrode having a plurality of second through-holes penetrating in the thickness direction other than the first through-hole; A plurality of ceramic compacts are stacked in the thickness direction so as to sandwich the planar electrode therebetween, or a step of embedding the planar electrode in one ceramic compact, the plurality of ceramic compacts or the one ceramic Firing the compact while pressing in the thickness direction, and the planar electrode includes a first region including at least a region surrounding the first through hole and a region other than the first region. And the ratio of the total area occupied by the second through holes present in the first area to the area of the flat electrode in the first area is the second area. And a ratio of the total area occupied by the second through holes present in the second region to the area of the planar electrode in.
本発明の電極内蔵セラミックス焼結体の製造によれば、本発明の電極内蔵セラミックス焼結体を得ることができる。 According to the production of the electrode-embedded ceramic sintered body of the present invention, the electrode-embedded ceramic sintered body of the present invention can be obtained.
（電極内蔵セラミックス焼結体の構成）
本発明の実施形態に係る電極内蔵セラミックス焼結体１０について図面を参照して、説明する。
(Configuration of electrode-embedded ceramic sintered body)
An electrode-embedded ceramic sintered body 10 according to an embodiment of the present invention will be described with reference to the drawings.
図１を参照して、電極内蔵セラミックス焼結体１０（電極内蔵セラミックス部品）は略円盤状の静電チャックである。セラミックス焼結体１の一対の端面のうち一方が、図示しないウエハが載置される載置面Ｓを構成する。セラミックス焼結体１には、載置面Ｓに対して平行な平面に沿って延在する平板状の電極２が内蔵されている。ここでは、前記平面の法線方向は、上下方向となっている。 Referring to FIG. 1, the electrode-embedded ceramic sintered body 10 (electrode-embedded ceramic component) is a substantially disk-shaped electrostatic chuck. One of the pair of end faces of the ceramic sintered body 1 constitutes a mounting surface S on which a wafer (not shown) is mounted. A flat plate-like electrode 2 extending along a plane parallel to the mounting surface S is incorporated in the ceramic sintered body 1. Here, the normal direction of the plane is the vertical direction.
セラミックス焼結体１の材質は、例えば、窒化アルミニウム、アルミナ、窒化珪素、酸化イットリウム、イットリウム及びアルミニウムの複合酸化物、酸化マグネシウム、スピネル（ＭｇＡｌ２Ｏ４）又はフッ化物であり、高純度であることが好ましい。 The material of the ceramic sintered body 1 is, for example, aluminum nitride, alumina, silicon nitride, a composite oxide of yttrium oxide, yttrium and aluminum, magnesium oxide, spinel (MgAl 2 O 4 ) or fluoride, and has high purity. Is preferred.
平面電極２は、ここでは、厚さ０．１ｍｍを超える金属箔又は金属板により構成されている。例えば、平面電極２の厚さは、０．１ｍｍを超え０．１６ｍｍ以下であり、より好ましくは０．１１ｍｍ以上０．１３ｍｍ以下である。このように。平面電極２は、厚さ０．１ｍｍを超える金属箔から構成されているので、厚さが０．１ｍｍ以下の金属箔から構成される従来の場合と比較して、平面電極２に反り等の変形が生じ難い。 The planar electrode 2 is here comprised by the metal foil or metal plate which exceeds thickness 0.1 mm. For example, the thickness of the flat electrode 2 is more than 0.1 mm and 0.16 mm or less, more preferably 0.11 mm or more and 0.13 mm or less. in this way. Since the flat electrode 2 is made of a metal foil having a thickness of more than 0.1 mm, the flat electrode 2 may be warped or the like as compared with the conventional case where the thickness is 0.1 mm or less. It is difficult for deformation to occur.
平面電極２は、金属箔にパンチングが施されたパンチングメタルであってもよく、スクリーン印刷により印刷したものであってもよい。 The flat electrode 2 may be a punching metal obtained by punching a metal foil, or may be printed by screen printing.
平面電極２は、後述するセラミックス成形体１１，１２の焼成温度を経験するため、高融点金属が用いられる。例えば、セラミックス焼結体１の材質として窒化アルミニウム、アルミナ又は窒化珪素が用いられる場合、モリブデン、タングステン、又はこれらの合金が平面電極２として用いられる。ただし、平面電極２は、白金、チタン等の金属からなるものであってもよい。 The flat electrode 2 uses a high melting point metal in order to experience the firing temperature of the ceramic compacts 11 and 12 described later. For example, when aluminum nitride, alumina or silicon nitride is used as the material of the ceramic sintered body 1, molybdenum, tungsten or an alloy thereof is used as the planar electrode 2. However, the flat electrode 2 may be made of a metal such as platinum or titanium.
セラミックス焼結体１に内蔵される平面電極２の数は、ここのでは２つであるが、１つであっても、３つ以上であってもよい。各平面電極２は、図２に示すように、略半円形状に形成されている。平面電極２は、電極内蔵セラミックス焼結体１０の使用目的に応じてその形状等が適宜変更されうる。 The number of planar electrodes 2 incorporated in the ceramic sintered body 1 is two here, but may be one or three or more. Each flat electrode 2 is formed in a substantially semicircular shape as shown in FIG. The shape and the like of the flat electrode 2 may be appropriately changed in accordance with the purpose of use of the electrode-embedded ceramic sintered body 10.
各平面電極２には、それぞれ給電端子３が接続されている。ここでは、各平面電極２の下面に給電端子３がロウ付けにより接合されている。ただし、平面電極２と給電端子３との接続はこれに限定されない。例えば、平面電極２に図示しない貫通孔が形成されており、この貫通孔の内面に給電端子３の側周面がロウ付けなどにより接合されるものであってもよい。また、他の部材を介して、平面電極２と給電端子３とが間接的に電気的に接続されるものであってもよい。 A feed terminal 3 is connected to each planar electrode 2. Here, the feed terminal 3 is joined to the lower surface of each flat electrode 2 by brazing. However, the connection between the flat electrode 2 and the feeding terminal 3 is not limited to this. For example, a through hole (not shown) may be formed in the flat electrode 2, and the side peripheral surface of the power supply terminal 3 may be joined to the inner surface of the through hole by brazing or the like. In addition, the planar electrode 2 and the feeding terminal 3 may be indirectly and electrically connected via another member.
電極内蔵セラミックス焼結体１０には、前記ウエハを脱離させる際に使用される図示しないリフトピンとの干渉を避けるために、貫通孔４が形成されている。ここでは、貫通孔４は３つであるが、１つ、２つ、又は４つ以上であってもよい。 A through hole 4 is formed in the electrode-embedded ceramic sintered body 10 in order to avoid interference with a lift pin (not shown) used when detaching the wafer. Here, the number of through holes 4 is three, but may be one, two, or four or more.
また、電極内蔵セラミックス焼結体１０は、その周端部に、リフトピンを挿通させるために、図２の平面電極２の周端部の貫通孔２ａに対応する位置に図示しない貫通孔が形成されている。 Further, in the electrode-embedded ceramic sintered body 10, a through hole (not shown) is formed at a position corresponding to the through hole 2a at the peripheral end of the flat electrode 2 of FIG. ing.
各平面電極２には、それぞれ、貫通孔４の一部となる第１の貫通孔２ａ、及び第１の貫通孔２ａ以外の多数の第２の貫通孔２ｂが形成されている。ここでは、例えば、第１の貫通孔２ａの孔径は６ｍｍであり、第２の貫通孔２ｂの孔径は１ｍｍである。ただし、孔径はこれらに限定されない。例えば、第２の貫通孔２ｂの孔径は０．５ｍｍ以上５ｍｍ以下であり、より好ましくは１ｍｍ以上２ｍｍ以下である。 Each planar electrode 2 is formed with a first through hole 2a which is a part of the through hole 4 and a large number of second through holes 2b other than the first through holes 2a. Here, for example, the hole diameter of the first through hole 2a is 6 mm, and the hole diameter of the second through hole 2b is 1 mm. However, the pore size is not limited to these. For example, the hole diameter of the second through hole 2b is 0.5 mm or more and 5 mm or less, more preferably 1 mm or more and 2 mm or less.
平面電極２は、第１の領域Ｒ１と、第１の領域Ｒ１以外の領域である第２の領域Ｒ２とに区別される。 The flat electrode 2 is divided into a first region R1 and a second region R2 which is a region other than the first region R1.
第１の領域Ｒ１は、第１の貫通孔４を取り囲む領域Ｒ１ｂを少なくとも含む。領域Ｒ１ｂは、第１の貫通孔４から距離Ｌ１内の領域である。そして、第１の領域Ｒ１は、平面電極２の外周縁領域である領域Ｒ１ａも含む。領域Ｒ１ａは、平面電極２の外周端から距離Ｌ２内の領域である。さらに、第１の領域Ｒ１は、給電端子３が平面電極２に接続される部分３ａを取り囲む領域Ｒ１ｃも含む。領域Ｒ１ｃは、給電端子３がロウ付け等によって接続される部分３ａの端から距離Ｌ３以内の領域である。 The first region R1 includes at least a region R1b surrounding the first through hole 4. The region R1b is a region within the distance L1 from the first through hole 4. The first region R <b> 1 also includes a region R <b> 1 a which is an outer peripheral region of the flat electrode 2. The region R1a is a region within the distance L2 from the outer peripheral end of the flat electrode 2. Furthermore, the first region R1 also includes a region R1c surrounding the portion 3a where the feeding terminal 3 is connected to the planar electrode 2. The region R1c is a region within a distance L3 from the end of the portion 3a to which the feed terminal 3 is connected by brazing or the like.
ここで、距離Ｌ１，Ｌ２，Ｌ３は、全て同じであっても、互いに異なっていてもよい。距離Ｌ１，Ｌ２，Ｌ３は、例えば、０．５ｍｍ以上５ｍｍ以下であり、より好ましくは１ｍｍ以上３ｍｍ以下である。 Here, the distances L1, L2 and L3 may be all the same or may be different from each other. The distances L1, L2 and L3 are, for example, 0.5 mm or more and 5 mm or less, and more preferably 1 mm or more and 3 mm or less.
第１の領域Ｒ１における第２の貫通孔２ｂ同士の間隔は、第２の領域Ｒ２における第２の貫通孔２ｂ同士の間隔よりも小さくなっている。そして、各第２の貫通孔２ｂは、略同じ内径を有する。よって、第１の領域Ｒ１における平面電極２の面積に対する第１の領域Ｒ１内に存在する第２の貫通孔２ｂが占める総面積の割合は、第２の領域Ｒ２における平面電極２の面積に対する第２の領域内Ｒ２に存在する第２の貫通孔２ｂが占める総面積の割合よりも大きい。 The distance between the second through holes 2b in the first region R1 is smaller than the distance between the second through holes 2b in the second region R2. And each 2nd through-hole 2b has a substantially the same internal diameter. Therefore, the ratio of the total area occupied by the second through holes 2b in the first region R1 to the area of the flat electrode 2 in the first region R1 is the first ratio to the area of the flat electrode 2 in the second region R2. The ratio of the total area occupied by the second through holes 2b present in the second region R2 is larger.
なお、第１の領域Ｒ１は、領域Ｒ１ｂのみからなり、領域Ｒ１ａ及び領域Ｒ１ｃを含まないものであってもよい。また、第１の領域Ｒ１は、領域Ｒ１ｂと、領域Ｒ１ａ又は領域Ｒ１ｃの何れかのみからなるものであってもよい。さらに、第１の領域Ｒ１は、領域Ｒ１ａ，Ｒ１ｂ，Ｒ１ｃ以外の領域、例えば、平面電極２に接続される部分の端面から距離Ｌ３内の領域、平面電極２が露出される部分の端面から距離Ｌ４以内の領域分を含むものであってもよい。 The first region R1 may include only the region R1b and may not include the region R1a and the region R1c. Further, the first region R1 may be formed of only the region R1b and either the region R1a or the region R1c. Furthermore, the first region R1 is a region other than the regions R1a, R1b, R1c, for example, a region within a distance L3 from an end surface of a portion connected to the flat electrode 2 and a distance from an end surface of a portion exposed to the flat electrode 2 It may include an area within L4.
例えば、第２の貫通孔２ｂ同士の間隔は、第１の領域Ｒ１では１ｍｍ以上６ｍｍ以下であり、第２の領域Ｒ２では５ｍｍ以上１２ｍｍ以下である。より好ましくは、第２の貫通孔２ｂ同士の間隔は、第１の領域Ｒ１では２ｍｍ以上５ｍｍ以下であり、第２の領域Ｒ２では５ｍｍ以上８ｍｍ以下である。 For example, the distance between the second through holes 2b is 1 mm or more and 6 mm or less in the first region R1, and 5 mm or more and 12 mm or less in the second region R2. More preferably, the distance between the second through holes 2b is 2 mm or more and 5 mm or less in the first region R1, and 5 mm or more and 8 mm or less in the second region R2.
また、第１の領域Ｒ１内において、領域Ｒ１ａ，Ｒ１ｂ，Ｒ１ｃのそれぞれにおいて、距離Ｌ、又は第２の貫通孔２ｂ同士の間隔はそれぞれ異なっていてもよい。そして、第１の領域Ｒ１における第２の貫通孔２ｂ同士の間隔が第２の領域Ｒ２における第２の貫通孔２ｂ同士の間隔よりも小さいとは、第１の領域Ｒ１における第２の貫通孔２ｂ同士の最も離れた間隔が第２の領域Ｒ２における第２の貫通孔２ｂ同士の最も近い間隔よりも小さいことを意味する。 In each of the regions R1a, R1b, and R1c in the first region R1, the distance L or the distance between the second through holes 2b may be different. And the second through hole in the first region R1 that the distance between the second through holes 2b in the first region R1 is smaller than the distance between the second through holes 2b in the second region R2 It means that the most distant distance between 2b is smaller than the closest distance between the second through holes 2b in the second region R2.
第２の貫通孔２ｂ内の部分を介して平面電極２の上下方向に存在するセラミックス焼結体１は一体化されている。 The ceramic sintered body 1 which exists in the up-down direction of the plane electrode 2 via the part in the 2nd through-hole 2b is integrated.
第１の領域Ｒ１は、第２の領域Ｒ２と比較して、外部からの応力が作用しやすく、セラミックス焼結体１と平面電極２との剥離が生じ易い。そこで、第１の領域Ｒ１では、第２の領域Ｒ２と比較して、第２の貫通孔２ｂ同士の間隔を狭くして、すなわち、第２の貫通孔２ｂを密集させることにより、第２の貫通孔２ｂにおける部分を介した平面電極２の上下方向のセラミックス焼結体１の強固な一体化を図ることが可能となる。 As compared with the second region R2, the first region R1 is more susceptible to external stress, and the peeling between the ceramic sintered body 1 and the planar electrode 2 is more likely to occur. Therefore, in the first region R1, the distance between the second through holes 2b is narrower than that in the second region R2, that is, the second through holes 2b are densely arranged. It is possible to achieve firm integration of the ceramic sintered body 1 in the vertical direction of the flat electrode 2 through the portion in the through hole 2b.
（電極内蔵セラミックス焼結体の製造方法）
本発明の実施形態に係る電極内蔵セラミックス焼結体１０の製造方法について図面を参照して、説明する。
(Method of manufacturing electrode-embedded ceramic sintered body)
A method of manufacturing the electrode-embedded ceramic sintered body 10 according to the embodiment of the present invention will be described with reference to the drawings.
まず、平面電極２を作製する。具体的には、厚さが１ｍｍを超える金属箔（金属板）を用意して、図２に示すように、この金属箔をパンチングにより第１の貫通孔２ａ及び第２の貫通孔２ｂを形成しながら、略半円状に打抜く。 First, the flat electrode 2 is manufactured. Specifically, a metal foil (metal plate) having a thickness of more than 1 mm is prepared, and as shown in FIG. 2, this metal foil is punched to form the first through holes 2a and the second through holes 2b. While punching, almost semi-circular.
図３に示すように、略円盤状のセラミックス成形体１１を用意し、このセラミックス成形体１１の上に平面電極２を載置する。そして、平面電極２の上に略円盤状のセラミックス成形体１２を載置する。セラミックス成形体１１，１２の成形は、一軸プレス、ＣＩＰ、鋳込み又は射出成形等、一般的なセラミックス成形体の成形を行う際に用いられる方法で行えばよい。 As shown in FIG. 3, a substantially disc-shaped ceramic compact 11 is prepared, and the flat electrode 2 is placed on the ceramic compact 11. Then, the substantially disk-shaped ceramic molded body 12 is placed on the flat electrode 2. The formed ceramic bodies 11 and 12 may be formed by a method used when forming a general formed ceramic body, such as uniaxial press, CIP, casting or injection molding.
そして、平面電極２を挟むように重ねられている２つの成形体１１，１２を、当該重なり方向に加圧しながら焼成する。ここでの加圧焼成は、ホットプレス等、一般的なセラミックス焼結体の加圧焼成を行う際に用いられる方法で行えばよい。 Then, the two compacts 11 and 12 stacked so as to sandwich the planar electrode 2 are fired while being pressurized in the overlapping direction. The pressure firing may be performed by a method used when performing pressure firing of a general ceramic sintered body, such as hot press.
なお、図示しないが、セラミックス成形体１１，１２の一方又は双方に凹部を形成し、この凹部に平面電極２を収容して、セラミックス成形体１１，１２に平面電極２を埋設した状態で、加圧しながら焼成してもよい。 Although not shown, a recess is formed in one or both of the ceramic molded bodies 11 and 12, and the flat electrode 2 is accommodated in the recess, and the flat electrode 2 is embedded in the ceramic molded bodies 11 and 12. You may bake, pressing.
その後、平面電極２の下面に給電端子３の上面を接触させた状態でロウ付けを行う。これにより、図１に示されている電極内蔵セラミックス焼結体１０が得られる。 Thereafter, brazing is performed in a state where the upper surface of the feed terminal 3 is in contact with the lower surface of the flat electrode 2. Thereby, the electrode-embedded ceramic sintered body 10 shown in FIG. 1 is obtained.
なお、平面電極２に貫通孔２ａ，２ｂを形成する際にバリが不可避的に発生する。従来、このようなバリは研磨加工により除去されていた。しかし、バリを残したまま、上記で述べたように焼成して、電極内蔵セラミックス焼結体１０を得ることも好ましい。この場合、バリがセラミックス成形体１１に食い込み、平面電極２とセラミックス焼結体１とのさらに強固な一体化を図ることが可能となる。 When the through holes 2 a and 2 b are formed in the flat electrode 2, burrs inevitably occur. Conventionally, such burrs have been removed by grinding. However, it is also preferable to obtain the electrode-embedded ceramic sintered body 10 by firing as described above while leaving the burrs. In this case, the burrs bite into the ceramic molded body 11, and it becomes possible to achieve further firm integration of the planar electrode 2 and the ceramic sintered body 1.
ただし、バリの存在による電界集中により絶縁破壊が生じることを防止するために、バリが発生した面をセラミックス成形体１１の上面に載置することが好ましい。 However, in order to prevent the occurrence of dielectric breakdown due to electric field concentration due to the presence of the burr, it is preferable to place the surface on which the burr is generated on the upper surface of the ceramic molded body 11.
１…セラミックス焼結体、 ２…平面電極、 ２ａ…第１の貫通孔、 ２ｂ…第２の貫通孔、 ３…給電端子、 ３ａ…平面電極と給電端子とが接続される部分、 ４…貫通孔、 １０…電極内蔵セラミックス焼結体、 １１，１２…セラミックス成形体、 Ｒ１…第１の領域、 Ｒ１ａ，Ｒ１ｂ，Ｒ１ｃ…領域、 Ｒ２…第２の領域、 Ｓ…載置面。 DESCRIPTION OF SYMBOLS 1 ... Ceramics sintered body 2 ... Planar electrode, 2a ... 1st through-hole, 2b ... 2nd through-hole, 3 ... Feeding terminal, 3a ... Portion where planar electrode and feeding terminal are connected, 4 ... Through Holes 10: sintered ceramic body with built-in electrodes 11, 12: molded ceramic body, R1: first region, R1a, R1b, R1c: region, R2: second region, S: mounting surface.
Claims (5)
前記平面電極には、前記貫通孔の一部を構成する第１の貫通孔、及び前記第１の貫通孔以外の前記厚み方向に貫通する複数の第２の貫通孔が形成されており、前記第２の貫通孔内の部分を介して前記平面電極の法線方向両方向の前記セラミックス焼結体が一体化されており、
前記平面電極は、前記第１の貫通孔を取り囲む領域を少なくとも含む第１の領域と前記第１の領域以外の領域である第２の領域とに区別され、
前記第１の領域における当該平面電極の面積に対する当該第１の領域内に存在する前記第２の貫通孔が占める総面積の割合が、前記第２の領域における当該平面電極の面積に対する当該第２の領域内に存在する前記第２の貫通孔が占める総面積の割合よりも大きいことを特徴とする電極内蔵セラミックス焼結体。 An electrode-embedded ceramic sintered body having a flat electrode embedded therein and a through-hole penetrating in a thickness direction of the flat electrode.
The flat electrode is formed with a first through hole forming a part of the through hole, and a plurality of second through holes penetrating in the thickness direction other than the first through hole, The ceramic sintered bodies in both directions normal to the planar electrode are integrated through a portion in the second through hole,
The flat electrode is divided into a first area including at least an area surrounding the first through hole and a second area other than the first area.
The ratio of the total area occupied by the second through holes in the first area to the area of the planar electrode in the first area is the second area to the area of the planar electrode in the second area. An electrode-embedded ceramic sintered body characterized by having a ratio of a total area occupied by the second through holes present in the area of (b).
前記第１の領域は、前記平面電極と前記給電端子とが接続される部分を取り囲む領域を含むことを特徴とする請求項１又は２に記載の電極内蔵セラミックス焼結体。 A feed terminal connected to the planar electrode;
The electrode-embedded ceramic sintered body according to claim 1, wherein the first region includes a region surrounding a portion where the planar electrode and the feeding terminal are connected.
前記貫通孔の一部となる第１の貫通孔と、前記第１の貫通孔以外の前記厚み方向に貫通する複数の第２の貫通孔が形成された前記平面電極を用意する工程と、
前記平面電極を間に挟むように複数のセラミックス成形体を前記厚さ方向に重ねる、又は、前記平面電極を一のセラミックス成形体に埋設する工程と、
前記複数のセラミックス成形体又は前記一のセラミックス成形体を前記厚さ方向について加圧しながら焼成する工程と、を含み、
前記平面電極は、前記第１の貫通孔を取り囲む領域を少なくとも含む第１の領域と前記第１の領域以外の領域である第２の領域とに区別され、
前記第１の領域における当該平面電極の面積に対する当該第１の領域内に存在する前記第２の貫通孔が占める総面積の割合が、前記第２の領域における当該平面電極の面積に対する当該第２の領域内に存在する前記第２の貫通孔が占める総面積の割合よりも大きいことを特徴とする方法。 A method for producing an electrode-embedded ceramic sintered body, wherein a flat electrode is embedded and a through hole penetrating in a thickness direction of the flat electrode is formed,
Preparing the planar electrode in which a first through hole which is a part of the through hole and a plurality of second through holes penetrating in the thickness direction other than the first through hole are formed;
Stacking a plurality of ceramic compacts in the thickness direction so as to sandwich the planar electrode therebetween, or embedding the planar electrode in one ceramic compact;
Firing the plurality of ceramic compacts or the one ceramic compact while pressing in the thickness direction,
The flat electrode is divided into a first area including at least an area surrounding the first through hole and a second area other than the first area.
The ratio of the total area occupied by the second through holes in the first area to the area of the planar electrode in the first area is the second area to the area of the planar electrode in the second area. The method is characterized in that it is larger than the ratio of the total area occupied by the second through holes present in the region of.
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