JP6520673B2 - Semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a method of manufacturing a semiconductor device.

  As a method of manufacturing a semiconductor device, Patent Document 1 describes a method of forming a metal film pattern on a semiconductor layer using etching. Also, a manufacturing method for forming a metal film pattern on a semiconductor layer using a lift-off method is generally known.

Patent No. 5564884 gazette

  The manufacturing method using etching has a problem that metal residue is generated on the semiconductor layer from which the metal film has been removed by etching. Moreover, in the manufacturing method using etching, there existed a problem which a defect | deletion generate | occur | produces at the edge part of the pattern of a metal film by side etching. In the manufacturing method using the lift-off method, the metal film mainly made of nickel (Ni) is made relatively thick in order to improve the heat resistance of the semiconductor device (for example, the metal mainly made of nickel (Ni)) In the case where the film is formed to a thickness of 200 nm or more), the opening of the resist pattern is deformed by the stress of the metal film formed on the resist pattern during formation of the metal film on the semiconductor layer. There was a problem that burrs (protrusions) were generated at the end of the pattern of the metal film formed on the layer.

  Metal residues and pattern defects and burrs cause the electrical characteristics of the semiconductor device to deteriorate. Therefore, a manufacturing method that can improve the electrical characteristics of a semiconductor device provided with a pattern of a metal film mainly made of nickel (Ni) has been desired.

The present invention has been made to solve at least a part of the above-mentioned problems, and can be realized as the following modes.
A first aspect of the present invention is a method of manufacturing a semiconductor device,
Applying a photoresist containing novolac resin on the semiconductor layer;
By exposing the photoresist with ultraviolet light of a first wavelength and then developing the photoresist, a negative resist pattern which is left as an exposed portion of the photoresist and which protrudes to the inside of the opening. Forming the
An irradiation step of curing the negative resist pattern by irradiating the negative resist pattern with ultraviolet light of a second wavelength shorter than the first wavelength;
Forming a metal film mainly made of nickel (Ni) on the semiconductor layer exposed from the opening of the negative resist pattern after the irradiation step;
Removing the negative resist pattern from the semiconductor layer;
Equipped with
In the irradiation step, the second wavelength irradiated to the negative resist pattern includes a wavelength of 254 nm, and an ultraviolet irradiation amount of the second wavelength is 735 (mW · min / cm ² ) or more 2490 (mW · min) / Cm ² ) or less.
The present invention can also be realized as the following modes.

(1) One embodiment of the present invention provides a method of manufacturing a semiconductor device. The manufacturing method comprises the steps of: applying a photoresist on a semiconductor layer; and exposing the photoresist using ultraviolet light of a first wavelength and then developing the photoresist, thereby exposing the photoresist. Forming a negative resist pattern left as a part and protruding to the inside of the opening; and irradiating the negative resist pattern with ultraviolet light of a second wavelength shorter than the first wavelength. An irradiation step of curing the mold resist pattern; and forming a metal film mainly made of nickel (Ni) on the semiconductor layer exposed from the opening of the negative resist pattern after the irradiation step. And removing the negative resist pattern from the semiconductor layer. According to this aspect, it is possible to improve the strength of the negative resist pattern against the stress of the metal film formed on the negative resist pattern. Therefore, it is possible to prevent the opening of the negative resist pattern from lifting in the step of forming the metal film. Therefore, the burr generated at the end of the pattern of the metal film formed on the semiconductor layer can be suppressed. As a result, it is possible to improve the electrical characteristics of the semiconductor device provided with the pattern of the metal film mainly made of nickel (Ni).

(2) In the manufacturing method described above, the photoresist may contain a novolac resin. According to this aspect, a negative resist pattern can be easily formed.

(3) In the manufacturing method described above, the photoresist may contain propylene glycol 1-monomethyl ether 2-acetate (PGMEA) as a main component, and may contain 5% by mass or more of novolak resin. According to this aspect, the negative resist pattern can be formed more easily.

(4) In the manufacturing method described above, the time of irradiating the ultraviolet light of the second wavelength in the irradiation step may be 5 minutes or more and 20 minutes or less. According to this aspect, the negative resist pattern can be sufficiently cured.

(5) In the manufacturing method described above, the first wavelength may be 350 nm or more and 450 nm or less. According to this aspect, the negative resist pattern can be easily formed from the photoresist.

(6) In the manufacturing method described above, the second wavelength may be 100 nm or more and 320 nm or less. According to this aspect, the negative resist pattern can be sufficiently cured.

(7) In the manufacturing method described above, the thickness of the metal film may be 200 nm or more and 500 nm or less. According to this aspect, it is possible to suppress the size of the burr with respect to the thickness of the metal film.

(8) In the manufacturing method described above, the thickness of the negative resist pattern may be 1 μm to 10 μm. According to this aspect, the strength of the negative resist pattern can be sufficiently secured.

(9) In the manufacturing method described above, the semiconductor layer may be mainly made of gallium nitride (GaN). According to this aspect, the electrical characteristics of the gallium nitride (GaN) -based semiconductor device can be improved.

  The present invention can be realized in various forms other than the method of manufacturing a semiconductor device, and for example, in the form of a semiconductor device manufactured using the manufacturing method of the above form and a manufacturing apparatus implementing the manufacturing method of the above form realizable.

  According to the method of manufacturing a semiconductor device in the present invention, it is possible to improve the strength of the negative resist pattern to the stress of the metal film formed on the negative resist pattern. Therefore, it is possible to prevent the opening of the negative resist pattern from lifting in the step of forming the metal film. Therefore, the burr generated at the end of the pattern of the metal film formed on the semiconductor layer can be suppressed. As a result, it is possible to improve the electrical characteristics of the semiconductor device provided with the pattern of the metal film mainly made of nickel (Ni).

FIG. 7 is a process chart showing a method of manufacturing a semiconductor device. It is explanatory drawing which shows a mode that a semiconductor device is manufactured. It is explanatory drawing which shows a mode that a semiconductor device is manufactured. It is explanatory drawing which shows a mode that a semiconductor device is manufactured. It is explanatory drawing which shows a mode that a semiconductor device is manufactured. It is explanatory drawing which shows a mode that a semiconductor device is manufactured. It is explanatory drawing which shows a mode that a semiconductor device is manufactured. It is explanatory drawing which shows a mode that a semiconductor device is manufactured. It is a graph which shows the result of having evaluated the relationship between UV irradiation time and the magnitude | size of a burr | flash. It is a SEM image which shows an example of a burr | flash. It is a graph which shows the result of having evaluated the relationship between the thickness of a metal film, and the magnitude | size of a burr | flash. It is a table | surface which shows the result of having evaluated the relationship between the material of a metal film, and the magnitude | size of a burr | flash.

A. Embodiment A-1. Method of Manufacturing Semiconductor Device FIG. 1 is a process diagram showing a method of manufacturing a semiconductor device. The manufacturing method of FIG. 1 is a method of manufacturing a semiconductor device using a lift-off method.

  FIG. 2 to FIG. 8 are explanatory views showing how a semiconductor device is manufactured. In FIG. 2, a semiconductor device 100 a is illustrated as a semiconductor device in the process of manufacturing. The semiconductor device 100 a includes a substrate 110 and a semiconductor layer 120.

  The substrate 110 of the semiconductor device 100 is a plate-shaped semiconductor. In the present embodiment, the thickness of the substrate 110 is about 300 μm. In the present embodiment, the substrate 110 is mainly made of gallium nitride (GaN). In the description of the present specification, "consisting mainly of gallium nitride (GaN)" means containing 90% or more of gallium nitride (GaN) in molar fraction.

The semiconductor layer 120 of the semiconductor device 100 is formed on the substrate 110. In the present embodiment, the semiconductor layer 120 is a semiconductor layer formed by epitaxial growth (crystal growth). In the present embodiment, the thickness of the semiconductor layer 120 is about 10 μm. In the present embodiment, the semiconductor layer 120 is mainly made of gallium nitride (GaN). In the present embodiment, the semiconductor layer 120 is an n-type semiconductor having n-type characteristics. In the present embodiment, the semiconductor layer 120 contains silicon (Si) as a donor element. In the present embodiment, the average value of the silicon (Si) concentration contained in the semiconductor layer 120 is about 1 × 10 ¹⁶ cm ⁻³ .

  The manufacturer of the semiconductor device applies a photoresist 180 on the semiconductor layer 120 (process P110). Thus, the semiconductor device 100a to the semiconductor device 100b are formed as semiconductor devices in the process of manufacturing (FIG. 3). The semiconductor device 100 b includes a photoresist 180 coated on the semiconductor layer 120.

  In the present embodiment, the photoresist 180 contains a novolac resin. In the present embodiment, the photoresist 180 contains propylene glycol 1-monomethyl ether 2-acetate (PGMEA) as a main component, and also contains 5% by mass or more of novolac resin.

In the present embodiment, the photoresist 180 is the next product 1.
Product 1: "TLOR-N001" made by Tokyo Ohka Kogyo Co., Ltd.
PGMEA content: 75% by mass
Novolak content: 20% by mass

In another embodiment, the photoresist 180 may be the next product 2.
Product 2: "AZ 5214E" manufactured by AZ Electro Materials
PGMEA content: 70% by mass
Novolak content: 28% by mass

  In the present embodiment, the manufacturer applies the photoresist 180 on the semiconductor layer 120 by spin coating. In the present embodiment, the manufacturer applies the photoresist 180 on the semiconductor layer 120 so that the thickness of the negative resist pattern 182 produced from the photoresist 180 is 1 μm to 10 μm.

  After applying the photoresist 180 (process P110), the manufacturer forms a negative resist pattern 182 from the photoresist 180 (process P120). Thus, the semiconductor device 100d (FIG. 5) is formed from the semiconductor device 100b through the semiconductor device c (FIG. 4) as a semiconductor device in the process of manufacturing. The negative resist pattern 182 has an opening 183 for exposing the semiconductor layer 120.

  When forming the negative resist pattern 182, the manufacturer first exposes the photoresist 180 using the ultraviolet light UV1 of the first wavelength (FIG. 4). In the present embodiment, the first wavelength which is the wavelength of the ultraviolet light UV1 is 350 nm or more and 450 nm or less. When exposing the photoresist 180, the manufacturer shields a portion of the photoresist 180 corresponding to the opening 183 from the ultraviolet light UV1 using the pattern mask PM.

  After exposing the photoresist 180, the manufacturer develops the photoresist 180 in the semiconductor device 100c (FIG. 5). Thus, the negative resist pattern 182 is formed on the semiconductor layer 120. The negative resist pattern 182 is a portion left as an exposed portion of the photoresist 180. The negative resist pattern 182 has a shape (reverse tapered shape) protruding to the inside of the opening 183. In the present embodiment, the thickness of the negative resist pattern 182 is 1 μm or more and 10 μm or less.

  After forming the negative resist pattern 182 (process P120), the manufacturer performs an irradiation process (process P130, FIG. 6). In the irradiation step (Step P130), the manufacturer irradiates the negative resist pattern 182 with ultraviolet rays UV2 of a second wavelength shorter than the first wavelength. Thereby, the negative resist pattern 182 in the semiconductor device 100e in the process of manufacture is cured.

  In the present embodiment, the second wavelength which is the wavelength of the ultraviolet light UV2 is 100 nm or more and 320 nm or less (for example, 157 nm, 185 nm, 193 nm, 248 nm, 254 nm, 313 nm, etc.). The generation source of the ultraviolet light UV2 may be a KrF excimer laser, an ArF excimer laser, an F2 excimer laser, a low pressure mercury lamp or the like.

  The UV irradiation time tuv, which is the time for irradiating the ultraviolet light UV2 in the irradiation step (step P130), is preferably 5 minutes or more and 20 minutes or less, and more preferably 10 minutes or more and 15 minutes or less. The evaluation of the UV irradiation time tuv will be described later.

  After the irradiation process (process P130), the manufacturer forms the metal film 150 on the semiconductor layer 120 on which the negative resist pattern 182 is formed (process P140). As a result, the semiconductor device 100e is formed from the semiconductor device 100e as a semiconductor device in the process of manufacturing (FIG. 7).

  The metal film 150 is formed on the semiconductor layer 120 exposed from the opening 183 of the negative resist pattern 182. Along with the formation of the metal film 150, a metal film 150 cp made of the same material as the metal film 150 is formed on the negative resist pattern 182. Along with the growth of the metal film 150 cp, an internal stress S1 is generated in the opening 183 of the negative resist pattern 182 in the direction in which the negative resist pattern 182 is lifted. The internal stress S1 deforms the opening 183 in the direction of spreading outward. The deformation of the opening 183 causes the burr 151 to be generated at the end of the metal film 150.

  In the present embodiment, the metal film 150 is mainly made of nickel (Ni). In other embodiments, the metal film 150 may consist primarily of other metals such as palladium (Pd), molybdenum (Mo).

  In the present embodiment, the thickness of the metal film 150 is 200 nm or more and 500 nm or less. In other embodiments, the thickness of the metal film 150 may be less than 200 nm or more than 500 nm.

  In the present embodiment, the method of forming the metal film 150 is electron beam evaporation (EB evaporation). In other embodiments, resistance heating deposition may be used, or sputtering may be used.

  After forming the metal film 150 (process P140), the manufacturer removes the negative resist pattern 182 from the semiconductor layer 120 (process P150). When the negative resist pattern 182 is removed from the semiconductor layer 120, the metal film 150 cp formed on the negative resist pattern 182 is removed (lifted off) together with the negative resist pattern 182. Thus, the semiconductor device 100f is formed from the semiconductor device 100f as a semiconductor device in the process of manufacturing (FIG. 8). After the negative resist pattern 182 is removed (process P150), various steps are performed to complete a semiconductor device.

A-2. Evaluation Test FIG. 9 is a graph showing the result of evaluating the relationship between the UV irradiation time tuv and the size Lb of the burr 151. The horizontal axis of FIG. 9 indicates a UV irradiation time tuv which is a time when the ultraviolet ray UV2 of the second wavelength is irradiated in the irradiation step (step P130). The vertical axis in FIG. 9 indicates the size Lb of the burr 151 formed at the end of the metal film 150.

In the evaluation test of FIG. 9, the tester produced a plurality of samples under the following manufacturing conditions.
-Material of semiconductor layer 120: gallium nitride (GaN)
Photoresist 180: "TLOR-N001" manufactured by Tokyo Ohka Kogyo Co., Ltd.
・ Thickness of negative resist pattern 182: 3 μm
-Generation device of ultraviolet light UV1: Exposure device-Intensity of ultraviolet light UV1: 222 mW / cm ²
-Wavelength of ultraviolet light UV1: 405 nm
Irradiation time of ultraviolet light UV1: 520 ms Second generation of ultraviolet light UV2: Low pressure mercury lamp Intensity and wavelength of ultraviolet light UV2: 147 mW / cm ² (wavelength 254 nm), 18 mW / cm ² (wavelength 185 nm), 9 mW / cm ² Wavelength 313 nm)
-UV irradiation time tuv: 0 minutes, 1 minute, 5 minutes, 10 minutes, 20 minutes-Material of metal film 150: Nickel (Ni)
· Thickness Tm of metal film 150: 200 nm, 500 nm

  In the evaluation test of FIG. 9, the examiner measured the size Lb of the burr 151 by observing a cross section of each sample with a scanning electron microscope (SEM). The tester used the average value of the values measured at three points per sample as the evaluation value.

  FIG. 10 is a SEM image showing an example of the burr 151. In the sample of FIG. 10, the thickness Tm of the metal film 150 is 200 nm, and the UV irradiation time tuv is 0 minutes. The tester measured the protruding length of the burr 151 protruding in the thickness direction from the surface of the metal film 150 as the size Lb of the burr 151.

  According to the evaluation test of FIG. 9, from the viewpoint of suppressing the size Lb of the burr 151, the UV irradiation time tuv is preferably 5 minutes or more and 20 minutes or less, and more preferably 10 minutes or more and 15 minutes or less preferable.

  FIG. 11 is a graph showing the result of evaluating the relationship between the thickness Tm of the metal film and the size Lb of the burr 151. The horizontal axis of FIG. 11 indicates the thickness Tm of the metal film. The vertical axis in FIG. 11 indicates the size Lb of the burr 151 formed at the end of the metal film 150.

In the evaluation test of FIG. 11, after preparing a plurality of samples under the following manufacturing conditions, the tester measured the size Lb of the burr 151 in the same manner as the evaluation test of FIG.
-Material of semiconductor layer 120: gallium nitride (GaN)
Photoresist 180: "TLOR-N001" manufactured by Tokyo Ohka Kogyo Co., Ltd.
・ Thickness of negative resist pattern 182: 3 μm
-Generation device of ultraviolet light UV1: Exposure device-Intensity of ultraviolet light UV1: 222 mW / cm ²
-Wavelength of ultraviolet light UV1: 405 nm
Irradiation time of ultraviolet light UV1: 520 ms Second generation of ultraviolet light UV2: Low pressure mercury lamp Intensity of ultraviolet light UV2: 147 mW / cm ² (wavelength 254 nm), 18 mW / cm ² (wavelength 185 nm), 9 mW / cm ² (wavelength 313 nm) )
UV irradiation time tuv: 10 minutes Material of metal film 150: nickel (Ni)
· Thickness Tm of metal film 150: 200 nm to 500 nm

  According to the evaluation test of FIG. 11, it can be seen that the size Lb of the burr 151 increases as the thickness Tm of the metal film 150 increases. From the viewpoint of improving the heat resistance of the metal film 150, the thickness Tm of the metal film 150 is preferably 200 nm or more, and more preferably 300 nm or more. From the viewpoint of suppressing the size Lb of the burrs 151, the thickness Tm of the metal film 150 is preferably 500 nm or less, and more preferably 400 nm or less.

FIG. 12 is a table showing the results of evaluating the relationship between the material of the metal film 150 and the size Lb of the burr 151. In the evaluation test of FIG. 12, after preparing a plurality of samples under the following manufacturing conditions, the tester measured the size Lb of the burr 151 in the same manner as the evaluation test of FIG. 9.
-Material of semiconductor layer 120: gallium nitride (GaN)
Photoresist 180: "TLOR-N001" manufactured by Tokyo Ohka Kogyo Co., Ltd. "AZ5214E" manufactured by AZ Electro Materials.
・ Thickness of negative resist pattern 182: 3 μm
-Generation device of ultraviolet light UV1: Exposure device-Intensity of ultraviolet light UV1: 222 mW / cm ²
-Wavelength of ultraviolet light UV1: 405 nm
-Irradiation time of ultraviolet light UV1: 520 msec (in the case of TLOR-N001), 100 msec (in the case of AZ5214E)
Ultraviolet UV2 of generator: the intensity of the low-pressure mercury lamp UV UV2: 147mW / cm ² (wavelength 254nm), 18mW / cm ² (wavelength 185nm), 9mW / cm ² (wavelength 313 nm)
UV irradiation time tuv: 0 minutes (no UV irradiation), 10 minutes Material of metal film 150: palladium (Pd), nickel (Ni), molybdenum (Mo)
· Thickness Tm of metal film 150: 200 nm

  With palladium (Pd) having a Young's modulus of 121 GPa, the suppression effect of the burrs 151 by the irradiation step (step P130) could not be confirmed. In the case of nickel (Ni) having a Young's modulus of 200 GPa, the size of the burrs 151 is suppressed to about 1/10 when the irradiation step (step P130) is performed, and the burrs 151 of the irradiation step (step P130) We could confirm the suppression effect. When molybdenum (Mo) having a Young's modulus of 329 GPa is used, the size of the burr 151 is suppressed to about half when the irradiation step (step P130) is performed, and the suppression effect of the burr 151 by the irradiation step (step P130) It could be confirmed.

  According to the evaluation test of FIG. 12, it is understood that the irradiation process (process P130) is effective when a metal having a Young's modulus greater than 121 GPa is used for the metal film 150 from the viewpoint of suppressing the size of the burrs 151. In addition, when a metal having a Young's modulus of more than 121 GPa and 329 GPa or less is used for the metal film 150, it is understood that the irradiation step (Step P130) is more effective.

A-3. Effects According to the embodiment described above, the strength of the negative resist pattern 182 with respect to the stress of the metal film 150 cp formed on the negative resist pattern 182 can be improved. Therefore, in the step of forming the metal film 150, the opening 183 of the negative resist pattern 182 can be prevented from lifting. Therefore, the burrs 151 generated at the end of the pattern of the metal film 150 formed on the semiconductor layer 120 can be suppressed. As a result, the electrical characteristics of the semiconductor device provided with the pattern of the metal film 150 mainly made of nickel (Ni) can be improved.

  In addition, since the photoresist 180 contains a novolac resin, the negative resist pattern 182 can be easily formed. The photoresist 180 contains PGMEA as a main component and also contains 5% by mass or more of novolak resin, so that a negative resist pattern can be formed more easily.

  Further, since the UV irradiation time tuv for irradiating the ultraviolet light UV2 of the second wavelength in the irradiation step (step P130) is 5 minutes or more and 20 minutes or less, the negative resist pattern 182 can be sufficiently cured.

  In addition, since the first wavelength of the ultraviolet light UV1 is 350 nm or more and 450 nm or less, the negative resist pattern 182 can be easily formed from the photoresist 180.

  In addition, since the second wavelength of the ultraviolet light UV2 is 100 nm or more and 320 nm or less, the negative resist pattern 182 can be sufficiently cured.

  Moreover, since the thickness Tm of the metal film 150 is 200 nm or more and 500 nm or less, the size Lb of the burr 151 with respect to the thickness Tm of the metal film 150 can be suppressed.

  Further, since the thickness of the negative resist pattern 182 is 1 μm or more and 10 μm or less, the strength of the negative resist pattern 182 can be sufficiently secured.

  Further, since the semiconductor layer 120 is mainly made of gallium nitride (GaN), electrical characteristics of a gallium nitride (GaN) -based semiconductor device can be improved.

B. Other Embodiments The present invention is not limited to the above-described embodiment, examples, and modifications, and can be implemented with various configurations without departing from the scope of the invention. For example, among the technical features in the embodiments, examples, and modifications, those corresponding to the technical features in the respective forms described in the section of the summary of the invention are for solving some or all of the problems described above. Alternatively, replacements and combinations can be made as appropriate to achieve some or all of the above-described effects. In addition, technical features that are not described as essential in the present specification can be deleted as appropriate.

  In the above embodiment, the metal film 150 may have a Schottky junction with the semiconductor layer 120 or may have an ohmic junction with the semiconductor layer 120. The material of the metal film 150 is not limited to nickel (Ni), and may be another metal such as palladium (Pd) and molybdenum (Mo). Another metal film may be formed on the metal film 150. An insulating film may be formed on the metal film 150.

  The semiconductor device to which the present invention is applied may be a semiconductor device in which a metal film is formed on a semiconductor layer, a Schottky barrier diode, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), a junction type transistor, It may be a bipolar transistor, an insulated gate bipolar transistor (IGBT), a metal-semiconductor field effect transistor (MESFET), a thyristor or the like.

In the above embodiment, the material of the substrate 110 is not limited to gallium nitride (GaN), but gallium arsenide (GaAs), aluminum nitride (AlN), silicon (Si), sapphire (Al ₂ O ₃ ) and silicon carbide (silicon carbide) It may be any such as SiC).

  In the above embodiment, the semiconductor layer 120 is not limited to the n-type semiconductor layer, and may be a p-type semiconductor layer. The semiconductor layer 120 may be either a group III-V semiconductor or a group IV semiconductor. The semiconductor layer 120 may be any of a nitride semiconductor, silicon (Si), silicon carbide (SiC) and gallium arsenide (GaAs).

100, 100a to 100g: semiconductor device 110: substrate 120: semiconductor layer 150: metal film 150 cp: metal film 151: burr 180: photoresist 182: negative resist pattern 183: opening

Claims (8)

A method of manufacturing a semiconductor device;
Applying a photoresist containing novolac resin on the semiconductor layer;
By exposing the photoresist with ultraviolet light of a first wavelength and then developing the photoresist, a negative resist pattern which is left as an exposed portion of the photoresist and which protrudes to the inside of the opening. Forming the
An irradiation step of curing the negative resist pattern by irradiating the negative resist pattern with ultraviolet light of a second wavelength shorter than the first wavelength;
Forming a metal film mainly made of nickel (Ni) on the semiconductor layer exposed from the opening of the negative resist pattern after the irradiation step;
Removing the negative resist pattern from the semiconductor layer;
In the irradiation step, the second wavelength irradiated to the negative resist pattern includes a wavelength of 254 nm, and an ultraviolet irradiation amount of the second wavelength is 735 (mW · min / cm ² ) or more 2490 (mW · min) / Cm ² ) or less, a method of manufacturing a semiconductor device. The method for manufacturing a semiconductor device according to claim 1 , wherein the photoresist contains propylene glycol 1-monomethyl ether 2-acetate (PGMEA) as a main component, and further contains 5% by mass or more of novolac resin. Time is 20 minutes or less than 5 minutes, the method of manufacturing a semiconductor device according to claim 1 or claim 2 which is irradiated with ultraviolet rays of the second wavelength in the irradiation step. The method for manufacturing a semiconductor device according to any one of claims 1 to 3 , wherein the first wavelength is 350 nm or more and 450 nm or less. The method for manufacturing a semiconductor device according to any one of claims 1 to 4 , wherein the second wavelength is 100 nm or more and 320 nm or less. The method of manufacturing a semiconductor device according to any one of claims 1 to 5 , wherein a thickness of the metal film is 200 nm or more and 500 nm or less. The method of manufacturing a semiconductor device according to any one of claims 1 to 6, wherein a thickness of the negative resist pattern is 1 μm or more and 10 μm or less. The method for manufacturing a semiconductor device according to any one of claims 1 to 7 , wherein the semiconductor layer mainly consists of gallium nitride (GaN).

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