JP6763124B2 - Laminates and methods for manufacturing semiconductor packages using them - Google Patents

Description

The present invention relates to a support glass substrate and a laminate using the same, and more specifically, to a support glass substrate used to support a processed substrate in a semiconductor package manufacturing process and a laminate using the same.

Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space for semiconductor chips used in these electronic devices is also severely limited, and high-density mounting of semiconductor chips has become an issue. Therefore, in recent years, a three-dimensional mounting technology, that is, a high-density mounting of a semiconductor package has been achieved by laminating semiconductor chips and connecting each semiconductor chip with wiring.

Further, the conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then individualizing them by dicing. However, the conventional WLP has a problem that it is difficult to increase the number of pins and the semiconductor chip is easily chipped because it is mounted in a state where the back surface of the semiconductor chip is exposed.

Therefore, as a new WLP, a fan-out type WLP has been proposed. The fan-out type WLP can increase the number of pins, and by protecting the end portion of the semiconductor chip, it is possible to prevent the semiconductor chip from being chipped or the like.

The fan-out type WLP includes a step of molding a plurality of semiconductor chips with a resin encapsulant to form a processed substrate, and then wiring to one surface of the processed substrate, a step of forming solder bumps, and the like.

Since these steps involve a heat treatment at about 200 ° C., the sealing material may be deformed and the size of the processed substrate may change. When the size of the processed substrate changes, it becomes difficult to wire the processed substrate at a high density to one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

In order to suppress the dimensional change of the processed substrate, it is effective to use a supporting substrate for supporting the processed substrate. However, even when the support substrate is used, the dimensional change of the processed substrate may occur. In particular, when the proportion of semiconductor chips in the processed substrate is small and the proportion of encapsulant is large, the dimensional change of the processed substrate is likely to occur.

Further, the processed substrate and the support substrate are integrated via an adhesive layer, a peeling layer, and the like. Then, the processed substrate and the support substrate are separated after the processing of the processed substrate.

Currently, the support substrate is discarded after being separated from the processed substrate, but if it can be reused, the cost of the semiconductor package can be reduced.

When the support substrate is reused, the adhesive layer and the release layer remaining on the support substrate must be removed as much as possible by acid treatment. However, if the current support substrate is acid-treated, the surface of the support substrate becomes rough, and it becomes difficult to accurately support the processed substrate.

The present invention has been made in view of the above circumstances, and a technical problem thereof is to create a support substrate which is unlikely to cause a dimensional change of a processed substrate and contributes to an increase in the number of times of reuse, and a laminate using the support substrate. This contributes to high-density mounting of semiconductor packages and cost reduction.

As a result of repeating various experiments, the present inventor has found that the above technical problems can be solved by adopting a glass substrate as a support substrate and increasing the acid resistance of the glass substrate. It is a suggestion. That is, the supporting glass substrate of the present invention is characterized in that the arithmetic average roughness Ra of the surface after being immersed in a 5 mass% HCl aqueous solution at 80 ° C. for 24 hours is 5 nm or less. Here, the "arithmetic mean roughness Ra of the surface" is determined by using, for example, an atomic force microscope (Dimension Icon SPM System manufactured by Bruker Nano) with respect to the sample surface in a scan size of 5 μm × 5 μm (capture interval: 512 points). × 512 points), the uneven shape can be measured at a scan rate of 1 Hz, and can be calculated from the obtained surface roughness curve. Incidentally, the arithmetic mean roughness Ra is the average of the absolute value of the roughness curve Z _j in the reference range N, is calculated by Equation 1.

The glass substrate has a surface that is easy to smooth and has rigidity. Therefore, when the glass substrate is used, the rigidity of the entire laminated body can be increased, and it becomes easy to suppress the dimensional change (particularly warp deformation) of the processed substrate during the processing of the processed substrate. Further, the glass substrate easily transmits light such as ultraviolet light. Therefore, when a glass substrate is used, the processed substrate and the glass substrate can be easily fixed by providing an adhesive layer or the like. Further, the processed substrate and the glass substrate can be easily separated by providing a release layer or the like.

The supporting glass substrate of the present invention has an arithmetic average roughness Ra of 5 nm or less after being immersed in a 5 mass% HCl aqueous solution at 80 ° C. for 24 hours. As a result, the adhesive layer and the peeling layer remaining on the support substrate can be effectively removed by the acid treatment without roughening the surface. As a result, it becomes possible to increase the number of times (useful number) of reuse of the support glass substrate.

Secondly, the support glass substrate of the present invention preferably has an overall plate thickness deviation of 3.0 μm or less. Here, the "overall plate thickness deviation" is the difference between the maximum plate thickness and the minimum plate thickness of the entire supporting glass substrate, and can be measured by, for example, the Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Research Institute.

Thirdly, the supporting glass substrate of the present invention is preferably used for supporting a processed substrate in the manufacturing process of a semiconductor package.

Fourth, it is preferable that the supporting glass substrate of the present invention has a mating surface inside the glass, that is, it is formed by an overflow down draw method.

Fifth, the supporting glass substrate of the present invention preferably contains 25.6% by mass or more of [SiO _2- Al ₂ O _3- B ₂ O _3- Na ₂ O] in the glass composition. As a result, acid resistance is improved, and the number of times the supporting glass substrate can be reused can be increased. Here, "SiO _2- Al ₂ O _3- B ₂ O _3- Na ₂ O" is the content of Al ₂ O ₃ , B ₂ O ₃ and Na ₂ O based on the content of SiO _{2 in} the glass composition. Refers to the value obtained by subtracting.

Sixth, the supporting glass substrate of the present invention has a glass composition of SiO ₂ 55 to 75%, Al ₂ O _{3 3 to} 15%, B ₂ O ₃ 5 to 20%, MgO 0 to 5% in terms of glass composition. , CaO 0~10%, SrO 0~5% , BaO 0~5%, 0~5% ZnO, Na 2 O 5~15%, containing _{K 2 O 0~10%, [SiO} 2 -Al 2 The support glass substrate according to any one of claims 1 to 5, wherein the value of [O _3- B ₂ O _3- Na ₂ O] is 25.6% by mass or more.

Seventh, the supporting glass substrate of the present invention has a glass composition, in _{mass%, SiO 2 60~75%, Al} 2 O 3 5~15%, B 2 O 3 5~20%, MgO 0~5% , CaO 0~10%, SrO 0~5% , BaO 0~5%, 0~5% ZnO, Na 2 O 7~16%, containing _{K 2 O 0~8%, [SiO} 2 -Al 2 The value of [O _3- B ₂ O _3- Na ₂ O] is preferably 25.6% by mass or more.

Eighth, the supporting glass substrate of the present invention preferably has a plate thickness of less than 2.0 mm and a warp amount of 60 μm or less. Here, the "warp amount" refers to the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least squares focal plane. For example, it can be measured by the Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Research Institute.

Ninth, the laminate of the present invention is a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is preferably the above-mentioned supporting glass substrate.

Tenth, the laminate of the present invention preferably includes a semiconductor chip in which the processed substrate is molded with at least a sealing material.

Eleventh, the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and processing the processed substrate. It is preferable that the support glass substrate is the above-mentioned support glass substrate while having the steps.

Twelveth, it is preferable that the method for manufacturing a semiconductor package of the present invention includes a step of wiring the processing process on one surface of the processed substrate.

Thirteenth, it is preferable that the method for manufacturing a semiconductor package of the present invention includes a step in which the processing process forms solder bumps on one surface of the processed substrate.

Fourteenth, the semiconductor package of the present invention is preferably manufactured by the above-mentioned method for manufacturing a semiconductor package.

Fifteenth, the electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is preferably the above-mentioned semiconductor package.

It is a conceptual perspective view which shows an example of the laminated body of this invention. It is a conceptual cross-sectional view which shows the manufacturing process of a fan out type WLP. Sample No. according to [Example 1]. 4 is an atomic force microscope image of the surface before HCl treatment of 4. Sample No. according to [Example 1]. It is an atomic force microscope image of the surface after HCl treatment of 4. Sample No. according to [Example 1]. It is an atomic force microscope image of the surface before HCl treatment of 25. Sample No. according to [Example 1]. 25 is an atomic force microscope image of the surface after HCl treatment of 25.

In the supporting glass substrate of the present invention, the arithmetic mean roughness Ra of the surface after being immersed in a 5 mass% HCl aqueous solution at 80 ° C. for 24 hours is preferably 5 nm or less, 4 nm or less, 3 nm or less, 2 nm or less, 1 nm or less. It is 0.7 nm or less, particularly 0.5 nm or less. If the arithmetic mean roughness Ra of the surface becomes too large, the surface becomes too rough due to the acid treatment, and it becomes difficult to increase the number of times the supporting glass substrate is reused.

In the supporting glass substrate of the present invention, the content of [SiO _2- Al ₂ O _3- B ₂ O _3- Na ₂ O] in the glass composition is preferably 25.6% by mass or more, 30% by mass or more, and 35. It is 40% by mass or more, 40% by mass or more, and particularly 42 to 50% by mass. If the content of [SiO _2- Al ₂ O _3- B ₂ O _3- Na ₂ O] in the glass composition is too small, the acid resistance tends to decrease, and the number of times the supporting glass substrate can be reused can be increased. It becomes difficult.

The effects of each component are as follows.

SiO ₂ is a component that forms a network of glass and is a component that enhances acid resistance. If the content of SiO ₂ is too small, the devitrification resistance and acid resistance tend to decrease. On the other hand, if the content of SiO ₂ is too large, the meltability and moldability tend to decrease.

Al ₂ O ₃ is a component that increases the strain point and Young's modulus. On the other hand, if the content of Al ₂ O ₃ is too large, devitrified crystals are likely to precipitate on the glass, and it becomes difficult to form a glass substrate by a float method, an overflow down draw method, or the like. In addition, acid resistance tends to decrease.

B ₂ O ₃ is a component that lowers the high-temperature viscosity and density, stabilizes the glass, makes it difficult for crystals to precipitate, and lowers the liquidus temperature. However, if the content of B ₂ O ₃ is too large, the acid resistance tends to decrease.

Na ₂ O is a component that lowers high-temperature viscosity and enhances meltability and moldability, and is also a component that improves devitrification resistance. If the content of Na ₂ O is too small, the meltability tends to decrease. On the other hand, if the content of Na ₂ O is too large, the acid resistance tends to decrease.

In the supporting glass substrate of the present invention, the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is preferably 0 × 10 ^-7 / ° C. or higher and 165 × 10 ^-7 / ° C. or lower. This makes it easier to match the coefficients of thermal expansion of the processed substrate and the supporting glass substrate. When the coefficients of thermal expansion of both are matched, it becomes easy to suppress a dimensional change (particularly, warpage deformation) of the processed substrate during the processing. As a result, high-density wiring can be performed on one surface of the processed substrate, and solder bumps can be accurately formed. The "average coefficient of thermal expansion in the temperature range of 30 to 380 ° C." can be measured with a dilatometer.

The average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is preferably increased when the proportion of semiconductor chips in the processed substrate is small and the proportion of encapsulant is large, and conversely, the semiconductor chips in the processed substrate. When the ratio of the sealing material is large and the ratio of the sealing material is small, it is preferable to reduce the ratio.

If you want to regulate the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C to 0 × ^10-7 / ° C or higher and less than 50 × ^10-7 / ° C, the supporting glass substrate has a glass composition of SiO by mass%. _It preferably contains ₂ 55 to 75%, Al ₂ O ₃ 15 to 30%, Li ₂ O 0.1 to 6%, Na ₂ O + K ₂ O 0 to 8%, MgO + CaO + SrO + BaO 0 to 10%, or SiO ₂ It is also preferable to contain 55 to 75%, Al ₂ O ₃ 10 to 30%, Li ₂ O + Na ₂ O + K ₂ O 0 to 0.3%, and MgO + CaO + SrO + BaO 5 to 20%.
As another composition, the supporting glass substrate of the present invention has a glass composition of SiO ₂ 55 to 68%, Al ₂ O ₃ 12 to 25%, B ₂ O _{30 to} 15%, MgO + CaO + SrO + BaO 5 to 30 in mass%. It is preferable to contain%. Here, "MgO + CaO + SrO + BaO" is the total amount of MgO, CaO, SrO and BaO.
When it is desired to regulate the average thermal expansion coefficient in the temperature range of 30 to 380 ° C. to 50 × ^10-7 / ° C. or higher and less than 70 × ^10-7 / ° C., the supporting glass substrate has a glass composition of SiO by mass%. ₂ 55-75%, Al ₂ O ₃ 3-15%, B ₂ O ₃ 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0 It preferably contains ~ 5%, Na ₂ O 5-15%, K ₂ O 0-10%, SiO ₂ 64-71%, Al ₂ O ₃ 5-10%, B ₂ O ₃ 8-15%. , 0~5% MgO, CaO 0~6% , SrO 0~3%, BaO 0~3%, 0~3% ZnO, Na 2 O 5~15%, by containing K 2 O 0 to 5% Is more preferable. When it is desired to regulate the average thermal expansion coefficient in the temperature range of 30 to 380 ° C. to 70 × ^10-7 / ° C. or higher and 85 × ^10-7 / ° C. or lower, the supporting glass substrate has a glass composition of SiO by mass%. _{2 60~75%, Al 2 O 3} 5~15%, B 2 O 3 5~20%, 0~5% MgO, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0 It preferably contains ~ 5%, Na ₂ O 7 ~ 16%, K ₂ O 0 ~ 8%, SiO ₂ 60 ~ 68%, Al ₂ O ₃ 5 ~ 15%, B ₂ O ₃ 5 ~ 20%. , 0~5% MgO, CaO 0~10% , SrO 0~3%, BaO 0~3%, 0~3% ZnO, Na 2 O 8~16%, by containing K 2 O 0 to 3% Is preferable. If you want to regulate the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C to more than 85 x ^10-7 / ° C and 120 x ^10-7 / ° C or less, the supporting glass substrate has a glass composition of SiO by mass%. ₂ 55 to 70%, Al ₂ O _{3 3 to} 13%, B ₂ O ₃ 2 to 8%, MgO 0 to 5%, CaO 0 to 10%, SrO 0 to 5%, BaO 0 to 5%, ZnO 0 It preferably contains ~ 5%, Na ₂ O 10-21%, and K ₂ O 0-5%. If you want to regulate the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C to more than 120 × ^10-7 / ° C and 165 × ^10-7 / ° C or less, the supporting glass substrate has a glass composition of SiO by mass%. _{2 53~65%, Al 2 O 3} 3~13%, B 2 O 3 0~5%, MgO 0.1~6%, CaO 0~10%, SrO 0~5%, BaO 0~5%, It preferably contains ZnO 0 to 5%, Na ₂ O + K ₂ O 20 to 40%, Na ₂ O 12 to 21%, and K ₂ O 7 to 21%. By doing so, it becomes easy to regulate the coefficient of thermal expansion within a desired range, and the devitrification resistance is improved, so that it becomes easy to mold a support glass substrate having a small deviation in overall plate thickness. In addition, "Na ₂ O + K ₂ O" refers to the total amount of Na ₂ O and K ₂ O. "MgO + CaO + SrO + BaO" refers to the total amount of MgO, CaO, SrO and BaO.

A type selected from the group of As ₂ O ₃ , Sb ₂ O ₃ , CeO ₂ , SnO ₂ , F, Cl, SO ₃ (preferably the group of SnO ₂ , Cl, SO ₃ ) as a fining agent in the glass composition. Alternatively, two or more kinds may be added in an amount of 0 to 3%. The content of SnO ₂ + SO ₃ + Cl is preferably 0 to 1%, 100 to 3000 ppm, 300 to 2500 ppm, and particularly 500 to 2500 ppm. If the content of SnO ₂ + SO ₃ + Cl is less than 100 ppm, it becomes difficult to enjoy the clarification effect. Here, "SnO ₂ + SO ₃ + Cl" refers to the total amount of SnO ₂ , SO ₃ , and Cl.

From an environmental point of view, it is preferable to refrain from using As ₂ O ₃ , Sb ₂ O ₃ , and F as much as possible, and it is preferable that they are not substantially contained. Here, "substantially free of As ₂ O ₃ " specifically means that the content of As ₂ O ₃ is less than 500 ppm (mass). "Substantially free of Sb ₂ O ₃ " specifically means that the content of Sb ₂ O ₃ is less than 500 ppm (mass). "Substantially free of F" specifically means that the content of F is less than 500 ppm (mass).

From the viewpoint of the environment, it is preferable that PbO and Bi ₂ O ₃ are not substantially contained in the glass composition. Here, "substantially free of PbO" means that PbO is not positively added as a glass component, but it is allowed to be mixed as an impurity. Specifically, the content of PbO is 500 ppm. It means that it is less than (mass). By "substantially free of Bi ₂ O _3", but not added actively Bi ₂ O ₃ as a glass component, a purpose to allow the case to be mixed as an impurity, specifically, Bi ₂ O _It means that the content of ₃ is less than 500 ppm (mass).

The supporting glass substrate of the present invention preferably has the following characteristics.

The liquidus temperature is preferably less than 1150 ° C., 1120 ° C. or lower, 1100 ° C. or lower, 1080 ° C. or lower, 1050 ° C. or lower, 1010 ° C. or lower, 980 ° C. or lower, 960 ° C. or lower, 950 ° C. or lower, particularly 940 ° C. or lower. By doing so, it becomes easy to mold the glass substrate by the down draw method, particularly the overflow down draw method, so that it becomes easy to produce a glass substrate having a small plate thickness, and the total plate thickness deviation does not need to be polished. Can be reduced. Alternatively, a small amount of polishing can reduce the overall plate thickness deviation to less than 2.0 μm, especially less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced. Further, it becomes easy to prevent a situation in which devitrified crystals are generated during the manufacturing process of the glass substrate and the productivity of the glass substrate is lowered. Here, the "liquid phase temperature" is determined by passing the standard sieve 30 mesh (500 μm), putting the glass powder remaining in 50 mesh (300 μm) into a platinum boat, and then holding the glass powder in a temperature gradient furnace for 24 hours to crystallize. It can be calculated by measuring the temperature at which

The viscosity at the liquidus temperature is preferably 10 ^4.8 dPa · s or higher, 10 ^5.0 dPa · s or higher, 10 ^5.2 dPa · s or higher, 10 ^5.4 dPa · s or higher, especially 10 ^5.6. It is dPa · s or more. By doing so, it becomes easy to mold the glass substrate by the down draw method, particularly the overflow down draw method, so that it becomes easy to produce a glass substrate having a small plate thickness, and the total plate thickness deviation does not need to be polished. Can be enhanced. Alternatively, a small amount of polishing can reduce the overall plate thickness deviation to less than 2.0 μm, especially less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced. Further, it becomes easy to prevent a situation in which devitrified crystals are generated during the manufacturing process of the glass substrate and the productivity of the glass substrate is lowered. Here, the "viscosity at the liquidus temperature" can be measured by the platinum ball pulling method. The viscosity at the liquidus temperature is an index of moldability, and the higher the viscosity at the liquidus temperature, the better the moldability.

The temperature at 10 ^2.5 dPa · s is preferably 1650 ° C. or lower, 1600 ° C. or lower, 1550 ° C. or lower, particularly 1350 to 1500 ° C. When the temperature at 10 ^2.5 dPa · s becomes high, the meltability decreases and the manufacturing cost of the glass substrate rises. Here, the "temperature at 10 ^2.5 dPa · s" can be measured by the platinum ball pulling method. The temperature at 10 ^2.5 dPa · s corresponds to the melting temperature, and the lower the temperature, the better the meltability.

In the supporting glass substrate of the present invention, Young's modulus is preferably 60 GPa or more, 65 GPa or more, 70 GPa or more, and particularly 75 to 130 GPa. When the proportion of the semiconductor chip is small and the proportion of the encapsulant is large in the processed substrate, the rigidity of the entire laminate is lowered, and the processed substrate is likely to warp during the processing. Therefore, if the Young's modulus of the supporting glass substrate is increased, it becomes easy to suppress the warp deformation of the processed substrate, and the processed substrate can be supported firmly and accurately. Here, "Young's modulus" refers to a value measured by the bending resonance method.

The ultraviolet transmittance in the plate thickness direction at a wavelength of 300 nm is preferably 40% or more, 50% or more, 60% or more, 70% or more, and particularly 80% or more. If the ultraviolet transmittance is too low, it becomes difficult to bond the processed substrate and the supporting glass substrate by the adhesive layer due to the irradiation of ultraviolet light. If the ultraviolet transmittance is too low, the processed substrate and the supporting substrate are formed by the adhesive layer due to the irradiation of ultraviolet light. It becomes difficult to bond. Further, when an adhesive layer or the like is provided with an ultraviolet curable tape or the like, it becomes difficult to easily separate the processed substrate and the supporting glass substrate. The "ultraviolet transmittance in the plate thickness direction at a wavelength of 300 nm" can be evaluated by measuring the spectral transmittance at a wavelength of 300 nm using, for example, a double beam spectrophotometer.

The supporting glass substrate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method. In the overflow down draw method, molten glass is overflowed from both sides of a heat-resistant gutter-shaped structure, and the overflowed molten glass is merged at the lower apex end of the gutter-shaped structure to form a mating surface inside the glass. This is a method of manufacturing a glass substrate by stretching and molding downward. In the overflow down draw method, the surface of the glass substrate that should be the surface is formed in a free surface state without contacting the gutter-shaped refractory. Therefore, it becomes easy to manufacture a glass substrate having a small plate thickness, and the deviation in the overall plate thickness can be reduced without polishing the surface. Alternatively, a small amount of polishing can reduce the overall plate thickness deviation to less than 2.0 μm, especially less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced.

As a method for forming a glass substrate, for example, a slot-down method, a redraw method, a float method, or the like can be adopted in addition to the overflow down draw method.

The supporting glass substrate of the present invention preferably has a substantially disk shape or a wafer shape, and its diameter is preferably 100 mm or more and 500 mm or less, and particularly preferably 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of the semiconductor package. If necessary, it may be processed into another shape, for example, a shape such as a rectangle. The roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. The smaller the roundness, the easier it is to apply to the semiconductor package manufacturing process. The definition of roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

In the supporting glass substrate of the present invention, the overall plate thickness deviation is preferably 3 μm or less, 2 μm or less, less than 2 μm, 1 μm or less, and particularly less than 0.1 to 1 μm. The arithmetic mean roughness Ra of the surface (however, before immersion in the aqueous HCl solution) is preferably 5 nm or less, 2 nm or less, 1.5 nm or less, 1 nm or less, 0.8 nm or less, and particularly 0.5 nm or less. The higher the surface accuracy, the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible. Further, the strength of the support glass substrate is improved, and the support glass substrate and the laminate are less likely to be damaged. The "arithmetic mean roughness Ra" can be measured by an atomic force microscope (AFM).

The support glass substrate of the present invention is preferably formed by the overflow down draw method and then the surface is polished. By doing so, it becomes easy to regulate the total plate thickness deviation to less than 2.0 μm, particularly less than 1.0 μm.

The plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly 0.9 mm or less. As the plate thickness becomes thinner, the mass of the laminated body becomes lighter, so that the handleability is improved. On the other hand, if the plate thickness is too thin, the strength of the support glass substrate itself decreases, and it becomes difficult to fulfill the function as the support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and particularly 0.7 mm or more.

The amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and particularly 5 to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible.

The supporting glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably does not have a compressive stress layer on its surface. When the ion exchange treatment is performed, the manufacturing cost of the supporting glass substrate rises. Further, when the ion exchange treatment is performed, it becomes difficult to reduce the deviation in the overall thickness of the supporting glass substrate. The supporting glass substrate of the present invention does not exclude the aspect of forming a compressive stress layer on the surface by performing an ion exchange treatment. From the viewpoint of increasing the mechanical strength, it is preferable to perform an ion exchange treatment to form a compressive stress layer on the surface.

The laminate of the present invention is a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is the above-mentioned supporting glass substrate. Here, the technical features (preferable configuration, effect) of the laminate of the present invention overlap with the technical features of the supporting glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like. Further, a semiconductor package having heat resistance that can withstand heat treatment in the manufacturing process of the semiconductor package is preferable. As a result, the adhesive layer is less likely to melt in the semiconductor package manufacturing process, and the accuracy of the processing process can be improved. Since the processed substrate and the supporting glass substrate are easily fixed, an ultraviolet curable tape can also be used as an adhesive layer.

The laminate of the present invention preferably further has a release layer between the processed substrate and the supporting glass substrate, more specifically, between the processed substrate and the adhesive layer. By doing so, it becomes easy to peel off the processed substrate from the supporting glass substrate after performing a predetermined processing treatment on the processed substrate. From the viewpoint of productivity, the processed substrate is preferably peeled off by irradiation light such as laser light. As the laser light source, an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. Further, a resin that decomposes by irradiating the release layer with an infrared laser can be used. It is also possible to add a substance that efficiently absorbs infrared rays and converts them into heat to the resin. For example, carbon black, graphite powder, fine particle metal powder, dye, pigment and the like can be added to the resin.

The peeling layer is composed of a material in which "intra-layer peeling" or "interfacial peeling" occurs due to irradiation light such as laser light. That is, when irradiated with light of a certain intensity, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, ablation or the like occurs, and the material is composed of a material that causes peeling. In addition, when the component contained in the peeling layer is released as a gas by irradiation with irradiation light and leads to separation, or when the peeling layer absorbs light and becomes a gas and the vapor is released and leads to separation. There is.

In the laminate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. As a result, when the processed substrate and the supporting glass substrate are supported, even if the center positions of the two are slightly separated from each other, the edge portion of the processed substrate is less likely to protrude from the supporting glass substrate.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate. The laminate including at least the processed substrate and the supporting glass substrate for supporting the processed substrate has the above-mentioned material composition. The above molding method can be adopted as the molding method for the glass substrate.

The method for manufacturing a semiconductor package of the present invention preferably further includes a step of transporting the laminate. Thereby, the processing efficiency of the processing process can be improved. It should be noted that the "step of transporting the laminated body" and the "step of performing the processing process on the processed substrate" do not necessarily have to be performed separately, and may be performed at the same time.

In the method for manufacturing a semiconductor package of the present invention, the processing is preferably a process of wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, the size of the processed substrate is unlikely to change during these processes, so that these steps can be appropriately performed.

In addition to the above, as the processing, one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually, what is the supporting glass substrate)? Either the process of dry-etching the surface on the opposite side or the process of wet-etching one surface of the processed substrate (usually the surface on the opposite side of the supporting glass substrate) may be performed. In the method for manufacturing a semiconductor package of the present invention, the processed substrate is less likely to warp and the rigidity of the laminated body can be maintained. As a result, the above processing can be performed properly.

The semiconductor package of the present invention is characterized in that it is manufactured by the above-mentioned method for manufacturing a semiconductor package. Here, the technical features (suitable configuration, effect) of the semiconductor package of the present invention overlap with the technical features of the method for manufacturing the supporting glass substrate, the laminate, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the above-mentioned semiconductor package. Here, the technical features (suitable configuration, effect) of the electronic device of the present invention overlap with the supporting glass substrate, laminate, manufacturing method of the semiconductor package, and the technical features of the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The present invention will be further described with reference to the drawings.

FIG. 1 is a conceptual perspective view showing an example of the laminated body 1 of the present invention. In FIG. 1, the laminate 1 includes a support glass substrate 10 and a processed substrate 11. The support glass substrate 10 is attached to the processed substrate 11 in order to prevent the dimensional change of the processed substrate 11. A release layer 12 and an adhesive layer 13 are arranged between the support glass substrate 10 and the processed substrate 11. The release layer 12 is in contact with the support glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

As can be seen from FIG. 1, the laminate 1 is arranged in the order of the support glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11. The shape of the support glass substrate 10 is determined according to the processed substrate 11, but in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk shapes. For the release layer 12, for example, a resin that decomposes by irradiating a laser can be used. In addition, a substance that efficiently absorbs laser light and converts it into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dyes, pigments and the like. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of resin and is formed by coating, for example, by various printing methods, an inkjet method, a spin coating method, a roll coating method, or the like. UV curable tape can also be used. The adhesive layer 13 is dissolved and removed by a solvent or the like after the support glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12. The ultraviolet curable tape can be removed by a peeling tape after being irradiated with ultraviolet rays.

FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are attached on the adhesive layer 21. At that time, the active side surface of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with the resin encapsulant 23. As the sealing material 23, a material having little dimensional change after compression molding and dimensional change when molding wiring is used. Subsequently, as shown in FIGS. 2 (d) and 2 (e), the processed substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then bonded and fixed to the support glass substrate 26 via the adhesive layer 25. Let me. At that time, of the surfaces of the processed substrate 24, the surface opposite to the surface on the side where the semiconductor chip 22 is embedded is arranged on the support glass substrate 26 side. In this way, the laminated body 27 can be obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the support glass substrate 26. Further, after the obtained laminated body 27 is conveyed, as shown in FIG. 2F, after forming the wiring 28 on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, a plurality of solder bumps 29 are formed. To form. Finally, after separating the processed substrate 24 from the supporting glass substrate 26, the processed substrate 24 is cut for each semiconductor chip 22 and used for a subsequent packaging step. Further, the support glass substrate 26 is subjected to acid treatment with HCl or the like before being reused.

Hereinafter, the present invention will be described based on examples. The following examples are merely examples. The present invention is not limited to the following examples.

Tables 1 and 2 show Examples (Sample Nos. 1 to 24) and Comparative Examples (Sample No. 25) of the present invention.

First, a glass batch prepared with glass raw materials was placed in a platinum crucible so as to have the glass composition shown in the table, and melted at 1500 to 1700 ° C. for 8 hours. When melting the glass batch, it was stirred using a platinum stirrer to homogenize it. Next, the molten glass was poured onto a carbon plate, formed into a plate shape, and then slowly cooled from a temperature about 20 ° C. higher than the slow cooling point to room temperature at 3 ° C./min. For each of the obtained samples, the average linear thermal expansion coefficient α _{30 to 380} , the density ρ, the strain point Ps, the slow cooling point Ta, the softening point Ts, and the high temperature viscosity 10 ^4.0 dPa · s in the temperature range of 30 to 380 ° C. Temperature, high temperature viscosity 10 ^3.0 dPa · s temperature, high temperature viscosity 10 ^2.5 dPa · s temperature, high temperature viscosity 10 ^2.0 dPa · s temperature, liquid phase temperature TL, liquid phase temperature TL viscosity η, Young rate E and acid resistance were evaluated.

The average coefficient of linear thermal expansion α _{30 to 380} in the temperature range of 30 to 380 ° C. is a value measured by a dilatometer.

The density ρ is a value measured by the well-known Archimedes method.

The strain point Ps, the slow cooling point Ta, and the softening point Ts are values measured based on the method of ASTM C336.

The temperature at the high temperature viscosity of 10 ^4.0 dPa · s, 10 ^3.0 dPa · s, and 10 ^2.5 dPa · s is a value measured by the platinum ball pulling method.

The liquidus temperature TL is the temperature at which crystals precipitate after passing through a standard sieve of 30 mesh (500 μm) and placing the glass powder remaining in 50 mesh (300 μm) in a platinum boat and holding it in a temperature gradient furnace for 24 hours. It is a value measured by microscopic observation. The viscosity η at the liquidus temperature TL is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by the platinum ball pulling method.

Young's modulus E refers to a value measured by the resonance method.

The acid resistance was evaluated as follows. First, each sample was processed to a thickness of 10 mm × 50 mm × 1 mm, and then thoroughly washed with isopropyl alcohol. Next, after drying each of the obtained samples, the arithmetic mean roughness Ra of the surface was measured. Further, 100 ml of a 5 mass% HCl aqueous solution was prepared and placed in a Teflon (registered trademark) bottle, and then the temperature was adjusted to 80 ° C. Subsequently, each sample after drying was immersed in a 5 mass% HCl aqueous solution for 24 hours, the surface of each sample was washed, and the arithmetic mean roughness Ra of the surface was measured. In addition, FIG. 3 shows the sample No. 4 is an atomic force microscope image of the surface before HCl treatment, and FIG. 4 shows the sample No. It is an atomic force microscope image of the surface after HCl treatment of 4. FIG. 5 shows the sample No. It is an atomic force microscope image of the surface before HCl treatment of 25, and FIG. 6 shows a sample No. 25 is an atomic force microscope image of the surface after HCl treatment of 25.

As is clear from Tables 1 and 2, the sample No. Since 1 to 24 have high acid resistance, it is considered that they contribute to an increase in the number of times the supporting glass substrate is reused. On the other hand, sample No. Since 25 has low acid resistance, it is considered that it does not contribute to an increase in the number of times the supporting glass substrate is reused.

Each sample of [Example 2] was prepared as follows. First, the sample numbers shown in Tables 1 and 2 are listed. After blending the glass raw materials so as to have a glass composition of 1 to 24, the glass raw material is supplied to a glass melting furnace and melted at 1400 to 1700 ° C., and then the molten glass is supplied to an overflow down draw forming apparatus, and the plate thickness is 0. Each was molded to be 0.7 mm. The obtained glass substrate (overall plate thickness deviation of about 4.0 μm) was processed to a thickness of φ300 mm × 0.7 mm, and then both surfaces thereof were polished by a polishing device. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together. During the polishing process, it was occasionally controlled so that a part of the glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. For each of the obtained polished glass substrates, the total plate thickness deviation and the amount of warpage were measured by the Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Research Institute. As a result, the total plate thickness deviation was less than 1.0 μm, and the warpage amount was 35 μm or less.

1, 27 Laminates 10, 26 Support glass substrates 11, 24 Processed substrates 12 Release layers 13, 21, 25 Adhesive layers 20 Support members 22 Semiconductor chips 23 Encapsulants 28 Wiring 29 Solder bumps

Claims (8)

A laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate.
The processed substrate comprises at least a semiconductor chip molded with a sealing material.
The supporting glass substrate has a glass composition of SiO ₂ 55 to 75%, Al ₂ O _{3 3 to} 15%, B ₂ O ₃ 5 to 20%, MgO 0 to 5%, CaO 0 to 10%, in terms of glass composition . It contains SrO 0 to 5%, BaO 0 to 5%, ZnO 0 to 5%, Na ₂ O 5 to 15%, and K ₂ O 0 to 10%, and [SiO ₂ −Al ₂ O ₃ −” in the glass composition. The value of [B ₂ O _3- Na ₂ O] is 25.6 to 50% by mass, and the arithmetic average roughness Ra of the surface after being immersed in a 5% by mass HCl aqueous solution at 80 ° C. for 24 hours becomes 5 nm or less. A laminated body characterized by that. A laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate.
The processed substrate comprises at least a semiconductor chip molded with a sealing material.
Supporting glass substrate is a glass composition including, in _{mass%, SiO 2 60~75%, Al} 2 O 3 5~15%, B 2 O 3 5~20%, 0~5% MgO, CaO 0~10%, It contains SrO 0 to 5%, BaO 0 to 5%, ZnO 0 to 5%, Na ₂ O 7 to 16%, and K ₂ O 0 to 8%, and contains [SiO ₂ −Al ₂ O ₃ −” in the glass composition. The value of [B ₂ O _3- Na ₂ O] is 25.6 to 50% by mass, and the arithmetic average roughness Ra of the surface after being immersed in a 5% by mass HCl aqueous solution at 80 ° C. for 24 hours becomes 5 nm or less. A laminated body characterized by that. The laminate according to claim 1 or 2 , wherein the overall thickness deviation of the supporting glass substrate is 3.0 μm or less. The laminate according to any one of claims 1 to 3, wherein the support glass substrate has a mating surface inside the glass. The laminate according to any one of claims 1 to 4, wherein the thickness of the support glass substrate is less than 2.0 mm, and the amount of warpage of the support glass substrate is 60 μm or less. A method for manufacturing a semiconductor package, which comprises a step of preparing the laminate according to any one of claims 1 to 5 and a step of performing a processing process on a processed substrate. The method for manufacturing a semiconductor package according to claim 6, wherein the processing process includes a step of wiring on one surface of the processed substrate. The method for manufacturing a semiconductor package according to claim 6 or 7, wherein the processing includes a step of forming solder bumps on one surface of the processed substrate.