JP6955320B2 - Manufacturing method of laminate and semiconductor package - Google Patents

Description

The present invention relates to a support glass substrate and a laminate using the same, and more specifically, to a support glass substrate used to support a processed substrate in a manufacturing process of a semiconductor package (semiconductor device) and a laminate using the same.

Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space for semiconductor chips used in these electronic devices is also severely limited, and high-density mounting of semiconductor chips has become an issue. Therefore, in recent years, a three-dimensional mounting technology, that is, a high-density mounting of a semiconductor package has been achieved by laminating semiconductor chips and connecting each semiconductor chip with wiring.

Further, the conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then individualizing them by dicing. However, the conventional WLP has a problem that it is difficult to increase the number of pins and the semiconductor chip is easily chipped because the back surface of the semiconductor chip is exposed.

Therefore, as a new WLP, a fan-out type WLP has been proposed. The fan-out type WLP can increase the number of pins, and by protecting the end portion of the semiconductor chip, it is possible to prevent the semiconductor chip from being chipped or the like.

The fan-out type WLP includes a step of molding a plurality of semiconductor chips with a resin encapsulant to form a processed substrate, and then wiring to one surface of the processed substrate, a step of forming solder bumps, and the like.

Since these steps involve a heat treatment at about 200 ° C., the sealing material may be deformed and the size of the processed substrate may change. When the dimensions of the processed substrate change, it becomes difficult to wire the processed substrate at a high density to one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

In order to suppress the dimensional change of the processed substrate, it is effective to use a support substrate for supporting the processed substrate. However, even when a support substrate is used, the dimensional change of the processed substrate may occur.

The present invention has been made in view of the above circumstances, and a technical problem thereof is high-density mounting of a semiconductor package by creating a support substrate which is unlikely to cause a dimensional change of a processed substrate and a laminate using the support substrate. Is to contribute to.

As a result of repeating various experiments, the present inventors have found that the above technical problems can be solved by adopting a glass substrate as a support substrate and strictly regulating the coefficient of thermal expansion of this glass substrate. , The present invention is proposed. That is, the supporting glass substrate of the present invention is characterized in that the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. is 66 × 10 ^-7 / ° C. or higher and 81 × 10 ^-7 / ° C. or lower. Here, the "average coefficient of thermal expansion in the temperature range of 20 to 200 ° C." can be measured with a dilatometer.

The glass substrate has a surface that is easy to smooth and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be firmly and accurately supported. Further, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the support glass substrate can be easily fixed by providing an adhesive layer or the like with an ultraviolet curable adhesive or the like. Further, the processed substrate and the supporting glass substrate can be easily separated by providing a release layer or the like that absorbs infrared rays. As another method, the processed substrate and the supporting glass substrate can be easily separated by providing an adhesive layer or the like with an ultraviolet curable tape or the like.

Further, in the supporting glass substrate of the present invention, the average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° C. is regulated to 66 × 10 ^-7 / ° C. or higher and 81 × 10 ^-7 / ° C. or lower. By doing so, when the proportion of the semiconductor chip in the processed substrate is small and the proportion of the encapsulant is large, the coefficient of thermal expansion of the processed substrate and the supporting glass substrate can be easily matched. When the thermal expansion coefficients of both are matched, it becomes easy to suppress the dimensional change (particularly, warp deformation) of the processed substrate during the processing. As a result, wiring can be performed at a high density on one surface of the processed substrate, and solder bumps can be accurately formed.

Secondly, the supporting glass substrate of the present invention is characterized in that the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is 70 × ^10-7 / ° C. or higher and 85 × ^10-7 / ° C. or lower. do. Here, the "average coefficient of thermal expansion in the temperature range of 30 to 380 ° C." can be measured with a dilatometer.

Thirdly, the supporting glass substrate of the present invention is preferably used for supporting a processed substrate in the manufacturing process of a semiconductor package.

Fourth, the supporting glass substrate of the present invention preferably has an ultraviolet transmittance of 40% or more in the plate thickness direction at a wavelength of 300 nm. Here, the "ultraviolet transmittance in the plate thickness direction at a wavelength of 300 nm" can be evaluated by measuring the spectral transmittance at a wavelength of 300 nm using, for example, a double beam spectrophotometer.

Fifth, the supporting glass substrate of the present invention preferably has a Young's modulus of 65 GPa or more. Here, "Young's modulus" refers to a value measured by the bending resonance method. In addition, 1 GPa corresponds to ^{about 101.9 Kgf / mm 2.}

Sixth, the supporting glass substrate of the present invention has a glass composition of SiO ₂ 40 to 80%, Al ₂ O ₃ 1 to 20%, B ₂ O _{30 to} 20%, MgO 0 to 12% in terms of glass composition. , CaO 0~10%, SrO 0~20% , BaO 0~20%, 0~10% ZnO, Na 2 O 4~20%, preferably contains K 2 O 0~15%.

Seventh, the supporting glass substrate of the present invention has a glass composition of SiO ₂ 60 to 75%, Al ₂ O ₃ 5 to 15%, B ₂ O ₃ 5 to 20%, MgO 0 to 5% in terms of glass composition. , CaO 0~10%, SrO 0~5% , BaO 0~5%, 0~5% ZnO, Na 2 O 7~16%, preferably contains K 2 O 0~8%.

Eighth, the supporting glass substrate of the present invention has a glass composition of SiO ₂ 50 to 80%, Al ₂ O ₃ 1 to 20%, B ₂ O _{30 to} 20%, MgO 0 to 5%, in terms of glass composition. It preferably contains CaO 0 to 10%, SrO 0 to 5%, BaO 0 to 5%, ZnO 0 to 5%, Na ₂ O 5 to 20%, and K ₂ O 0 to 10%.

Ninth, the supporting glass substrate of the present invention has a glass composition, in _{mass%, SiO 2 60~75%, Al} 2 O 3 10~20%, B 2 O 3 0~10%, MgO 0~5% , CaO 0~5%, SrO 0~5% , BaO 0~5%, 0~5% ZnO, Na 2 O 6~18%, preferably contains K 2 O 0~8%.

Tenth, the supporting glass substrate of the present invention has a glass composition of SiO ₂ 40 to 60%, Al ₂ O _{3 to} 20%, B ₂ O _{30 to} 20%, MgO 0 to 5%, in terms of glass composition. It preferably contains CaO 0 to 10%, SrO 0 to 20%, BaO 0 to 20%, Na ₂ O 4 to 20%, and K ₂ O 0 to 10%.

Eleventh, the supporting glass substrate of the present invention has a glass composition, in _{mass%, SiO 2 44~54%, Al} 2 O 3 10~15%, B 2 O 3 0~15%, MgO 0~3 It preferably contains 0.6%, CaO 3 to 8%, SrO 4 to 15%, BaO 0 to 14%, Na ₂ O 4 to 15%, and K ₂ O 0 to 10%.

Twelve, the supporting glass substrate of the present invention has a plate thickness of less than 2.0 mm, a wafer shape or a substantially disk shape having a diameter of 100 to 500 mm, an overall plate thickness deviation of 30 μm or less, and a warp. The amount is preferably 60 μm or less. Here, the "warp amount" refers to the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least squares focal plane. For example, it can be measured by the Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Research Institute.

Thirteenth, the laminate of the present invention is a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is preferably the above-mentioned supporting glass substrate.

Fourteenth, it is preferable that the laminated body of the present invention includes a semiconductor chip in which the processed substrate is molded with at least a sealing material.

Fifteenth, the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and processing the processed substrate. It is preferable that the support glass substrate is the above-mentioned support glass substrate while having the steps.

Sixteenth, it is preferable that the method for manufacturing a semiconductor package of the present invention includes a step of wiring the processing process on one surface of the processed substrate.

Seventeenth, it is preferable that the method for manufacturing a semiconductor package of the present invention includes a step in which the processing process forms solder bumps on one surface of the processed substrate.

Eighteenth, the semiconductor package of the present invention is characterized in that it is manufactured by the above-mentioned method for manufacturing a semiconductor device.

Nineteenth, the electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the above-mentioned semiconductor package.

It is a conceptual perspective view which shows an example of the laminated body of this invention. It is a conceptual cross-sectional view which shows the manufacturing process of a fan out type WLP.

In supporting glass substrate of the present invention, the average thermal expansion coefficient of 66 × ^{10 -7} / ℃ or higher in a temperature range of 20 to 200 ° C., and at and 81 × ^{10 -7} / ℃ less, preferably 66 × ^{10 -7} / Over ° C and 77 × ^10-7 / ° C or lower, 68 × ^10-7 / ° C or higher, and 76 × ^10-7 / ° C or lower, especially 70 × ^10-7 / ° C or higher and 75 × ^10-7 / ° C. It is as follows. If the average coefficient of thermal expansion in the temperature range of 20 to 200 ° C. is out of the above range, it becomes difficult for the coefficient of thermal expansion of the processed substrate and the supporting glass substrate to match. If the coefficients of thermal expansion of both are inconsistent, dimensional changes (particularly, warpage deformation) of the processed substrate are likely to occur during the processing.

The average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is 70 × ^10-7 / ° C. or higher and 85 × ^10-7 / ° C. or lower, preferably ^{more than 70 × 10-7} / ° C. and 83 × 10 ^{−. 7} / ° C. or lower, 72 × ^10-7 / ° C. or higher, and 81 × ^10-7 / ° C. or lower, particularly 74 × ^10-7 / ° C. or higher, and 80 × ^10-7 / ° C. or lower. If the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C. is out of the above range, it becomes difficult for the coefficient of thermal expansion of the processed substrate and the supporting glass substrate to match. If the coefficients of thermal expansion of both are inconsistent, dimensional changes (particularly, warpage deformation) of the processed substrate are likely to occur during the processing.

In the supporting glass substrate of the present invention, the ultraviolet transmittance in the plate thickness direction and the wavelength of 300 nm is preferably 40% or more, 45% or more, 50% or more, 55% or more, 60% or more, 65% or more, 70% or more. Especially 80% or more. If the ultraviolet transmittance is too low, it becomes difficult for the adhesive layer to bond the processed substrate and the support substrate. If the ultraviolet transmittance is too low, it becomes difficult for the adhesive layer to adhere the processed substrate and the support substrate by irradiation with ultraviolet light. Further, when an adhesive layer or the like is provided with an ultraviolet curable tape or the like, it becomes difficult to easily separate the processed substrate and the supporting glass substrate. The "ultraviolet transmittance in the plate thickness direction at a wavelength of 300 nm" can be evaluated by measuring the spectral transmittance at a wavelength of 300 nm using, for example, a double beam spectrophotometer.

The supporting glass substrate of the present invention has a glass composition of SiO ₂ 40 to 80%, Al ₂ O ₃ to 20%, B ₂ O _{30 to} 20%, MgO 0 to 12%, CaO 0 to 0% in terms of glass composition. It preferably contains 10%, SrO 0 to 20%, BaO 0 to 20%, ZnO 0 to 10%, Na ₂ O 4 to 20%, and K ₂ O 0 to 15%. The reasons for limiting the content of each component as described above are shown below. In addition, in the description of the content of each component,% notation represents mass% unless otherwise specified.

SiO ₂ is a main component forming the skeleton of glass. If _{the content of SiO 2} is too small, Young's modulus and acid resistance tend to decrease. On the other hand, if _{the content of SiO 2} is too large, the high-temperature viscosity tends to increase and the meltability tends to decrease, and devitrified crystals such as cristobalite tend to precipitate, so that the liquidus temperature tends to rise. Become. Therefore, _{the preferable lower limit range of SiO 2} is 40% or more, 44% or more, particularly 50% or more, and when the improvement of Young's modulus is prioritized, 58% or more, 60% or more, 62% or more, particularly 64% or more. The preferred upper limit ranges are 80% or less, 75% or less, 72% or less, particularly 70% or less, and 65% or less, 60% or less, particularly 54% or less when meltability is prioritized.

Al ₂ O ₃ is a component that enhances Young's modulus and suppresses phase separation and devitrification. If _{the content of Al 2} O ₃ is too small, the Young's modulus tends to decrease, and the glass tends to undergo phase separation and devitrification. On the other hand, if _{the content of Al 2} O ₃ is too large, the high-temperature viscosity becomes high and the meltability tends to decrease. Therefore, _{the preferable lower limit range of Al 2} O ₃ is 1% or more, 3% or more, 5% or more, particularly 6% or more, and 8% or more, particularly 10% or more when the improvement of Young's modulus is prioritized, which is preferable. The upper limit range is 20% or less, particularly 15% or less, and when meltability is prioritized, it is 10% or less, particularly 9% or less.

B ₂ O ₃ is a component that enhances meltability and devitrification resistance, and is a component that improves the susceptibility to scratches and enhances strength. If _{the content of B 2} O ₃ is too small, the meltability and devitrification resistance tend to decrease, and the resistance to hydrofluoric acid-based chemicals tends to decrease. On the other hand, if _{the content of B 2} O ₃ is too large, Young's modulus and acid resistance tend to decrease. Therefore, _{the suitable lower limit range of B 2} O ₃ is 0% or more, 3% or more, 5% or more, 6% or more, particularly 7% or more, and the preferable upper limit range is 20% or less, 18% or less, 15%. Below, it is 12% or less, particularly 10% or less, and when priority is given to improving Young's modulus, it is 5% or less, 3% or less, particularly 1% or less.

From the viewpoint of enhancing devitrification resistance, B ₂ O _3- Al ₂ O ₃ is preferably 0% or more, 0.5% or more, and particularly preferably 1% or more. On the other hand, B ₂ O ₃ −Al ₂ O ₃ is preferably 10% or less, 5 or less, 0% or less, -3% or less, -5% or less, particularly -7% or less, from the viewpoint of increasing Young's modulus. .. In addition, "B ₂ O _3- Al ₂ O ₃ " refers to a value obtained by subtracting the content of _{Al 2} O ₃ from the content of _{B 2} O _3.

MgO is a component that lowers high-temperature viscosity and enhances meltability, and is a component that significantly increases Young's modulus among alkaline earth metal oxides. However, when the content of MgO increases, devitrification resistance is increased. Is likely to decrease. Therefore, the content of MgO is preferably 0 to 12%, 0 to 8%, 0 to 5%, 0 to 4%, 0 to 3.8%, 0 to 3%, 0 to 2%, and particularly 0 to 0. It is less than 1%.

CaO is a component that lowers high-temperature viscosity and remarkably enhances meltability. Further, among alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that reduces the raw material cost. The CaO content is preferably 0-10%, 1-8%, 3-8%, 2-6%, especially 2-5%. If the CaO content is too high, the glass tends to be devitrified. If the CaO content is too small, it becomes difficult to enjoy the above effects.

SrO is a component that suppresses phase separation and is a component that enhances devitrification resistance. If the content of SrO is too high, the glass tends to be devitrified. Therefore, the content of SrO is preferably 0 to 20%, 0 to 15%, 0 to 9%, 0 to 5%, 0 to 4%, 0 to 3%, 0 to 2%, and particularly 0 to 1%. Is less than. When the improvement of devitrification resistance is prioritized, the preferable lower limit range of SrO is 0.1% or more, 1% or more, 2% or more, 4% or more, and particularly 7% or more.

BaO is a component that enhances devitrification resistance. The BaO content is preferably 0-20%, 0-14%, 0-9%, 0-5%, 0-4%, 0-3%, 0-2%, especially less than 0-1%. be. If the BaO content is too high, the glass tends to be devitrified. When the improvement of devitrification resistance is prioritized, the preferable lower limit range of BaO is 0.1% or more, 1% or more, and particularly 3% or more.

The mass ratio CaO / (MgO + CaO + SrO + BaO) is preferably 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, and particularly preferably 0.9 or more. If the mass ratio CaO / (MgO + CaO + SrO + BaO) is too small, the raw material cost tends to rise. In addition, "CaO / (MgO + CaO + SrO + BaO)" refers to a value obtained by dividing the content of CaO by the total amount of MgO, CaO, SrO and BaO.

ZnO is a component that lowers high-temperature viscosity and remarkably enhances meltability. The ZnO content is preferably 0-10%, 0-5%, 0.1-4%, particularly 0.5-3%. If the ZnO content is too small, it becomes difficult to enjoy the above effects. If the ZnO content is too high, the glass tends to be devitrified.

Na ₂ O is an important component for adjusting the coefficient of thermal expansion within the above range, and is a component that lowers the high-temperature viscosity, significantly enhances the meltability, and contributes to the initial melting of the glass raw material. If _{the content of Na 2} O is too small, the meltability tends to decrease and the coefficient of thermal expansion may become unreasonably low. On the other hand, if _{the content of Na 2} O is too large, the coefficient of thermal expansion may become unreasonably high. Therefore, _{the preferable lower limit range of Na 2} O is 4% or more, 5% or more, 6% or more, 7% or more, particularly 9% or more, and the suitable upper limit range is 20% or less, 18% or less, 16% or less. Especially, it is 15% or less.

B ₂ O ₃ −Na ₂ O is preferably −7 to 4%, −6 to 3%, −5 to 2%, and particularly -4 to 1%. By doing so, it becomes easy to adjust the coefficient of thermal expansion within the above range. In addition, "B ₂ O _3- Na ₂ O" refers to a value obtained by subtracting the content of _{Na 2} O from the content of _{B 2} O _3.

K ₂ O is a component for adjusting the coefficient of thermal expansion, and is a component that lowers the high-temperature viscosity, enhances the meltability, and contributes to the initial melting of the glass raw material. The K ₂ O content is preferably 0 to 15% 0 to 10% 0.1 to 8%, especially 1-5%. If _{the content of K 2} O is too large, the coefficient of thermal expansion may become unreasonably high. On the other hand, if _{the content of K 2} O is too small, the meltability tends to decrease.

In addition to the above components, other components may be introduced as optional components. The content of the components other than the above components is preferably 10% or less, particularly 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.

Fe ₂ O ₃ is a component that can be introduced as an impurity component or a clarifying agent component. However, if _{the content of Fe 2} O ₃ is too large, the ultraviolet transmittance may decrease. That is, if _{the content of Fe 2} O ₃ is too large, it becomes difficult to properly bond and detach the processed substrate and the supporting glass substrate via the resin layer and the release layer. Therefore, _{the content of Fe 2} O ₃ is preferably 0.05% or less, 0.03% or less, 0.001 to 0.02%, and particularly 0.005 to 0.01%. _{The "Fe 2} O ₃ " referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is treated in terms of _{Fe 2} O _3. Other oxides shall be handled in the same manner based on the indicated oxides.

_{As 2} O ₃ acts effectively as a clarifying agent, but from an environmental point of view, it is preferable to reduce these components as much as possible. The content of As ₂ O ₃ is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable that the content is substantially not contained. Here, "substantially free of As ₂ O ₃ " refers to a case where the content _{of As 2} O ₃ in the glass composition is less than 0.05%.

Sb ₂ O ₃ is a component having a good clarification effect in a low temperature range. The content of Sb ₂ O ₃ is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, and particularly 0.05 to 0.7%. If _{the content of Sb 2} O ₃ is too large, the glass tends to be colored.

SnO ₂ is a component having a good clarification effect in a high temperature range and a component that lowers high temperature viscosity. The SnO ₂ content is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, and particularly 0.05 to 0.7%. If the content of _{SnO 2 is too large, devitrified crystals of SnO 2} are likely to precipitate. If _{the content of SnO 2} is too small, it becomes difficult to enjoy the above effect.

SO ₃ is a component having a clarifying effect. The content of SO ₃ is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.5%, and particularly 0.05 to 0.3%. If the SO ₃ content is too high, SO ₂ riboyl is likely to occur.

Further, as long as the glass characteristics are not impaired, a metal powder such as F, C, Al, or Si may be introduced as a clarifying agent up to about 1% each. Further, CeO _{2 and the} like can be introduced up to about 1%, but it is necessary to pay attention to the decrease in the ultraviolet transmittance.

Cl is a component that promotes melting of glass. If Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification action can be promoted, and as a result, the melting cost can be reduced and the life of the glass manufacturing kiln can be easily extended. However, if the Cl content is too high, there is a risk of corroding the metal parts around the glass manufacturing kiln. Therefore, the Cl content is preferably 3% or less, 1% or less, 0.5% or less, and particularly 0.1% or less.

P ₂ O ₅ is a component that can suppress the precipitation of devitrified crystals. However, if a _{large amount of P 2} O ₅ is introduced, the glass becomes easy to separate. Therefore, _{the content of P 2} O ₅ is preferably 0 to 2.5%, 0 to 1.5%, 0 to 0.5%, and particularly 0 to 0.3%.

TiO ₂ is a component that lowers high-temperature viscosity and enhances meltability, and is also a component that suppresses solarization. However, _{when a large amount of TiO 2} is introduced, the glass is colored and the transmittance tends to decrease. Therefore, _{the content of TiO 2} is preferably 0 to 5%, 0 to 3%, 0 to 1%, and particularly 0 to 0.02%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, _{when a large amount of ZrO 2} is introduced, the glass is easily devitrified, and since the introduced raw material is poorly meltable, unmelted crystalline foreign matter may be mixed into the product substrate. Therefore, _{the content of ZrO 2} is preferably 0 to 10%, 0 to 7%, 0 to 5%, 0.001 to 3%, 0.01 to 1%, and particularly 0.1 to 0.5%. be.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have a function of increasing the strain point, Young's modulus, and the like. However, if the content of each of these components is more than 5%, particularly 1%, there is a risk that the raw material cost and the product cost will rise.

In the supporting glass substrate of the present invention, a suitable content range of each component can be appropriately selected to form a suitable glass composition range, but the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. is 66 × 10. ^The following glass composition range is particularly suitable when it is desired to increase the Young's modulus and devitrification resistance after restricting the temperature to ^-7 / ° C. or higher and 81 × 10 -7 / ° C. or lower.
(1) As the glass composition, SiO ₂ 60 to 75%, Al ₂ O ₃ 5 to 15%, B ₂ O ₃ 5 to 20%, MgO 0 to 5%, CaO 0 to 10%, SrO 0 in mass%. _{~5%, BaO 0~5%, 0~5} % ZnO, Na 2 O 7~16%, supporting glass substrate according to claim 6, characterized in that it contains K 2 O 0~8%.
(2) In terms of glass composition, SiO ₂ 50 to 80%, Al ₂ O ₃ to 20%, B ₂ O _{30 to} 20%, MgO 0 to 5%, CaO 0 to 10%, SrO 0 to 0% by mass. _{5%, BaO 0~5%, 0~5} % ZnO, Na 2 O 5~20%, containing K 2 O 0~10%.
(3) As the glass composition, SiO ₂ 60 to 75%, Al ₂ O ₃ 10 to 20%, B ₂ O _{30 to} 10%, MgO 0 to 5%, CaO 0 to 5%, SrO 0 in mass%. _{~5%, BaO 0~5%, 0~5} % ZnO, Na 2 O 6~18%, containing K 2 O 0~8%.
(4) As a glass composition, SiO ₂ 40 to 60%, Al ₂ O _{3 to} 20%, B ₂ O _{30 to} 20%, MgO 0 to 5%, CaO 0 to 10%, SrO 0 to 0% by mass. Contains 20%, BaO 0 to 20%, Na ₂ O 4 to 20%, and K ₂ O 0 to 10%.
(5) as a glass composition, in _{mass%, SiO 2 44~54%, Al} 2 O 3 10~15%, B 2 O 3 0~15%, MgO 0~3.6%, CaO 3~8%, Contains 4 to 15% SrO, 0 to 14% BaO, 4 to 15% Na ₂ O, and 0 to 10% _{K 2 O.}

The supporting glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably does not have a compressive stress layer on its surface. When the ion exchange treatment is performed, the manufacturing cost of the support glass substrate rises, but if the ion exchange treatment is not performed, the manufacturing cost of the support glass substrate can be reduced. Further, if the ion exchange treatment is performed, it becomes difficult to reduce the deviation in the overall thickness of the supporting glass substrate, but if the ion exchange treatment is not performed, such a problem can be easily solved. The supporting glass substrate of the present invention does not exclude the aspect of forming a compressive stress layer on the surface by performing an ion exchange treatment. From the viewpoint of increasing the mechanical strength, it is preferable to perform an ion exchange treatment to form a compressive stress layer on the surface.

The supporting glass substrate of the present invention preferably has the following characteristics.

In the supporting glass substrate of the present invention, Young's modulus is preferably 65 GPa or more, 68 GPa or more, 70 GPa or more, 72 GPa or more, 73 GPa or more, and particularly 74 GPa or more. If the Young's modulus is too low, it becomes difficult to maintain the rigidity of the laminated body, and the processed substrate is likely to be deformed, warped, or damaged.

The liquidus temperature is preferably less than 1150 ° C., 1100 ° C. or lower, 1050 ° C. or lower, 1000 ° C. or lower, 950 ° C. or lower, 900 ° C. or lower, 870 ° C. or lower, particularly 850 ° C. or lower. By doing so, it becomes easy to form the glass substrate by the down draw method, particularly the overflow down draw method, so that it becomes easy to produce a glass substrate having a small plate thickness, and the total plate thickness deviation can be reduced by a small amount of polishing. It can be reduced to less than 0 μm, particularly less than 1.0 μm, and as a result, the manufacturing cost of the glass substrate can be reduced. Further, it becomes easy to prevent a situation in which devitrified crystals are generated during the manufacturing process of the glass substrate and the productivity of the glass substrate is lowered. Here, the "liquid phase temperature" is determined by passing the standard sieve 30 mesh (500 μm), putting the glass powder remaining in 50 mesh (300 μm) into a platinum boat, and then holding the glass powder in a temperature gradient furnace for 24 hours to crystallize. It can be calculated by measuring the temperature at which is deposited.

The viscosity at the liquidus temperature is preferably 10,000 dPa · s or more, 30,000 dPa · s or more, 60,000 dPa · s or more, 100,000 dPa · s or more, 200,000 dPa · s or more, 300,000 dPa · s or more, 500,000 dPa · s or more, 800,000 dPa · s or more, especially. It is 1,000,000 dPa · s or more. By doing so, it becomes easy to form the glass substrate by the down draw method, particularly the overflow down draw method, so that it becomes easy to produce a glass substrate having a small plate thickness, and the total plate thickness deviation can be reduced by a small amount of polishing. It can be reduced to less than 0 μm, particularly less than 1.0 μm, and as a result, the manufacturing cost of the glass substrate can be reduced. Further, it becomes easy to prevent a situation in which devitrified crystals are generated during the manufacturing process of the glass substrate and the productivity of the glass substrate is lowered. Here, the "viscosity at the liquid phase temperature" can be measured by the platinum ball pulling method. The viscosity at the liquidus temperature is an index of moldability, and the higher the viscosity at the liquidus temperature, the better the moldability.

The temperature at 10 ^2.5 dPa · s is preferably 1580 ° C. or lower, 1520 ° C. or lower, 1480 ° C. or lower, 1450 ° C. or lower, 1420 ° C. or lower, particularly 1400 ° C. or lower. When the ^{temperature at 10 2.5} dPa · s becomes high, the meltability decreases and the manufacturing cost of the glass substrate rises. Here, the " ^{temperature at 10 2.5} dPa · s" can be measured by the platinum ball pulling method. The temperature at 10 ^2.5 dPa · s corresponds to the melting temperature, and the lower the temperature, the better the melting property.

The supporting glass substrate of the present invention is preferably formed by a down draw method, particularly an overflow down draw method. In the overflow down draw method, molten glass is overflowed from both sides of a heat-resistant gutter-shaped structure, and the overflowed molten glass is merged at the lower apex of the gutter-shaped structure and stretched downward to manufacture a glass substrate. How to do it. In the overflow down draw method, the surface of the glass substrate, which should be the surface, does not come into contact with the gutter-shaped refractory and is formed in a free surface state. Therefore, it becomes easy to manufacture a glass substrate having a small plate thickness, and the total plate thickness deviation can be reduced to less than 2.0 μm, particularly less than 1.0 μm by a small amount of polishing, and as a result, the glass substrate can be manufactured. The cost can be reduced.

As a method for forming a glass substrate, for example, a slot down method, a redraw method, a float method, or the like can be adopted in addition to the overflow down draw method.

The supporting glass substrate of the present invention preferably has a substantially disk shape or a wafer shape, and its diameter is preferably 100 mm or more and 500 mm or less, and particularly preferably 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of the semiconductor package. If necessary, it may be processed into another shape, for example, a shape such as a rectangle.

In the supporting glass substrate of the present invention, the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing process of semiconductor packages. The definition of roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

In the supporting glass substrate of the present invention, the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly 0.9 mm or less. As the plate thickness becomes thinner, the mass of the laminated body becomes lighter, so that the handleability is improved. On the other hand, if the plate thickness is too thin, the strength of the support glass substrate itself decreases, and it becomes difficult to fulfill the function as the support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and particularly 0.7 mm or more.

In the supporting glass substrate of the present invention, the overall plate thickness deviation is preferably 30 μm or less, 20 μm or less, 10 μm or less, 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, and particularly 0.1 to less than 1 μm. The arithmetic average roughness Ra is preferably 100 nm or less, 50 nm or less, 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, and particularly 0.5 nm or less. The higher the surface accuracy, the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible. Further, the strength of the support glass substrate is improved, and the support glass substrate and the laminate are less likely to be damaged. Furthermore, the number of times the support glass substrate can be reused can be increased. The "arithmetic mean roughness Ra" can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).

The support glass substrate of the present invention is preferably formed by the overflow down draw method and then the surface is polished. In this way, it becomes easy to regulate the overall plate thickness deviation to less than 2.0 μm, 1.5 μm or less, 1.0 μm or less, and particularly 0.1 to 1.0 μm or less.

In the supporting glass substrate of the present invention, the amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and particularly 5 to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible.

The laminate of the present invention is a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is the above-mentioned supporting glass substrate. Here, the technical features (preferable configuration, effect) of the laminate of the present invention overlap with the technical features of the supporting glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin, and for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like is preferable. Further, those having heat resistance to withstand heat treatment in the manufacturing process of the semiconductor package are preferable. As a result, the adhesive layer is less likely to melt in the manufacturing process of the semiconductor package, and the accuracy of the processing process can be improved. Since the processed substrate and the supporting glass substrate are easily fixed, an ultraviolet curable tape can also be used as an adhesive layer.

The laminate of the present invention further has a release layer between the processed substrate and the support glass substrate, more specifically, between the processed substrate and the adhesive layer, or between the support glass substrate and the adhesive layer. It is preferable to have a layer. By doing so, it becomes easy to peel off the processed substrate from the supporting glass substrate after performing a predetermined processing treatment on the processed substrate. From the viewpoint of productivity, the processed substrate is preferably peeled off by irradiation light such as laser light. As the laser light source, an infrared light laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. Further, a resin that decomposes by irradiating the release layer with an infrared laser can be used. In addition, a substance that efficiently absorbs infrared rays and converts them into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dye, pigment and the like can be added to the resin.

The peeling layer is composed of a material in which "intra-layer peeling" or "interfacial peeling" occurs due to irradiation light such as laser light. That is, when irradiated with light of a certain intensity, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, ablation or the like occurs, and the material is composed of a material that causes peeling. In addition, there are cases where the components contained in the peeling layer are released as a gas and lead to separation by irradiation with irradiation light, and cases where the peeling layer absorbs light and becomes a gas and the vapor is released and leads to separation. There is.

In the laminate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. As a result, when the processed substrate and the supporting glass substrate are supported, even if the center positions of the two are slightly separated from each other, the edge portion of the processed substrate is less likely to protrude from the supporting glass substrate.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a step of performing a processing process on the processed substrate. At the same time, the support glass substrate is the above-mentioned support glass substrate. Here, the technical features (suitable configuration, effect) of the method for manufacturing a semiconductor package of the present invention overlap with the technical features of the supporting glass substrate and the laminate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate. The laminate including at least the processed substrate and the supporting glass substrate for supporting the processed substrate has the above-mentioned material composition. The above molding method can be adopted as the molding method for the glass substrate.

The method for manufacturing a semiconductor package of the present invention preferably further includes a step of transporting the laminate. Thereby, the processing efficiency of the processing process can be improved. It should be noted that the "step of transporting the laminated body" and the "step of performing the processing process on the processed substrate" do not have to be performed separately and may be performed at the same time.

In the method for manufacturing a semiconductor package of the present invention, the processing is preferably a process of wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, the dimensions of the processed substrate are unlikely to change during these processes, so that these steps can be performed appropriately.

In addition to the above, as the processing, one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually, what is the supporting glass substrate)? It may be either a process of dry etching the surface on the opposite side or a process of wet etching one surface of the processed substrate (usually the surface on the opposite side of the supporting glass substrate). In the method for manufacturing a semiconductor package of the present invention, the processed substrate is less likely to warp and the rigidity of the laminated body can be maintained. As a result, the above processing can be performed properly.

The semiconductor package of the present invention is characterized in that it is manufactured by the above-mentioned method for manufacturing a semiconductor package. Here, the technical features (suitable configuration, effect) of the semiconductor package of the present invention overlap with the technical features of the method for manufacturing the supporting glass substrate, the laminate, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the above-mentioned semiconductor package. Here, the technical features (suitable configuration, effect) of the electronic device of the present invention overlap with the supporting glass substrate, laminate, manufacturing method of the semiconductor package, and technical features of the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The present invention will be further described with reference to the drawings.

FIG. 1 is a conceptual perspective view showing an example of the laminated body 1 of the present invention. In FIG. 1, the laminate 1 includes a support glass substrate 10 and a processed substrate 11. The support glass substrate 10 is attached to the processed substrate 11 in order to prevent the dimensional change of the processed substrate 11. A release layer 12 and an adhesive layer 13 are arranged between the support glass substrate 10 and the processed substrate 11. The release layer 12 is in contact with the support glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

As can be seen from FIG. 1, the laminate 1 is arranged in the order of the support glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11. The shape of the support glass substrate 10 is determined according to the processed substrate 11, but in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk shapes. For the release layer 12, for example, a resin that decomposes by irradiating a laser can be used. In addition, a substance that efficiently absorbs laser light and converts it into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dyes, pigments and the like. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is formed by coating, for example, by various printing methods, an inkjet method, a spin coating method, a roll coating method, or the like. UV curable tape can also be used. The adhesive layer 13 is dissolved and removed by a solvent or the like after the support glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12. The ultraviolet curable tape can be removed by a peeling tape after being irradiated with ultraviolet rays.

FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are attached onto the adhesive layer 21. At that time, the active side surface of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with the resin encapsulant 23. As the sealing material 23, a material having little dimensional change after compression molding and dimensional change when molding wiring is used. Subsequently, as shown in FIGS. 2 (d) and 2 (e), the processed substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then bonded and fixed to the support glass substrate 26 via the adhesive layer 25. Let me. At that time, of the surfaces of the processed substrate 24, the surface opposite to the surface on the side where the semiconductor chip 22 is embedded is arranged on the support glass substrate 26 side. In this way, the laminated body 27 can be obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the support glass substrate 26. Further, after the obtained laminated body 27 is conveyed, as shown in FIG. 2 (f), after forming the wiring 28 on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, a plurality of solder bumps 29 are formed. To form. Finally, after separating the processed substrate 24 from the supporting glass substrate 26, the processed substrate 24 is cut for each semiconductor chip 22 and subjected to a subsequent packaging step (FIG. 2 (g)).

Hereinafter, the present invention will be described based on examples. The following examples are merely examples. The present invention is not limited to the following examples.

Table 1 shows examples (Sample Nos. 1 to 25) of the present invention.

First, a glass batch prepared with a glass raw material was placed in a platinum crucible so as to have the glass composition shown in the table, and melted at 1600 ° C. for 4 hours. When melting the glass batch, stirring was performed using a platinum stirrer to homogenize the glass batch. Next, the molten glass was poured onto a carbon plate, formed into a plate shape, and then slowly cooled from a temperature about 20 ° C. higher than the slow cooling point to room temperature at 3 ° C./min. For each sample obtained, the average thermal expansion coefficient alpha _{20 to 200} in the temperature range of 20 to 200 ° C., an average thermal expansion coefficient alpha _{30 to 380} in the temperature range of 30 to 380 ° C., the density [rho, strain point Ps, slow cooling Point Ta, softening point Ts, temperature at high temperature viscosity 10 ^4.0 dPa · s, temperature at high temperature viscosity 10 ^3.0 dPa · s, temperature at high temperature viscosity 10 ^2.5 dPa · s, high temperature viscosity 10 ^2.0 dPa The temperature at s, the liquidus temperature TL, the viscosity η and the Young ratio E at the liquidus temperature TL, and the ultraviolet transmittance T at a wavelength of 300 nm were evaluated.

Average thermal expansion coefficient alpha _{20 to 200} in the temperature range of 20 to 200 ° C., the average thermal expansion coefficient alpha _{30 to 380} in the temperature range of 30 to 380 ° C., a value measured by the dilatometer.

The density ρ is a value measured by the well-known Archimedes method.

The strain point Ps, the slow cooling point Ta, and the softening point Ts are values measured based on the method of ASTM C336.

The temperature at a high temperature viscosity of 10 ^4.0 dPa · s, 10 ^3.0 dPa · s, and 10 ^2.5 dPa · s is a value measured by the platinum ball pulling method.

The liquidus temperature TL is the temperature at which crystals precipitate after passing through a standard sieve of 30 mesh (500 μm) and placing the glass powder remaining in 50 mesh (300 μm) in a platinum boat and holding it in a temperature gradient furnace for 24 hours. It is a value measured by microscopic observation. The viscosity η at the liquidus temperature TL is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by the platinum ball pulling method.

Young's modulus E refers to a value measured by the resonance method.

The ultraviolet transmittance T at a wavelength of 300 nm is a value obtained by measuring the spectral transmittance at a wavelength of 300 nm in the plate thickness direction using a double beam spectrophotometer. As a measurement sample, a plate having a thickness of 0.7 mm and having both sides polished to an optically polished surface (mirror surface) was used. When the arithmetic surface roughness Ra of this evaluation sample was measured by AFM, it was 0.5 to 1.0 nm in the measurement region of 10 μm × 10 μm.

As is clear from Table 1, the sample No. 1-25, the average thermal expansion coefficient alpha _{30 to 200} in the temperature range of 20 to 200 ° C. is ^{66 × 10 -7 / ℃ ~81 ×} 10 -7 / ℃, the average thermal expansion coefficient in the temperature range of 30 to 380 ° C. α ₃₀ to 380 was 70 × 10 ^-7 / ° C. to 84 × 10 ^-7 / ° C. In addition, sample No. In 1 to 24, Young's modulus E was 68 GPa or more. Furthermore, the sample No. In 1 to 25, the ultraviolet transmittance T at a wavelength of 300 nm was 55% or more. Therefore, the sample No. 1 to 25 are considered to be suitable as a support glass substrate used for supporting a processed substrate in the manufacturing process of a semiconductor manufacturing apparatus, particularly for sticking.

First, the sample Nos. After the glass raw materials are prepared so as to have a glass composition of 1 to 14, 18 to 25, the glass raw material is supplied to a glass melting furnace to melt at 1500 to 1600 ° C., and then the molten glass is supplied to an overflow down draw molding apparatus. Each was molded so that the plate thickness was 0.7 mm. The obtained glass substrate (overall plate thickness deviation of about 6.0 μm) was processed to a thickness of φ300 mm × 0.7 mm, and then both surfaces thereof were polished by a polishing device. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together. During the polishing process, it was occasionally controlled so that a part of the glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. For each of the obtained polished glass substrates, the total plate thickness deviation and the amount of warpage were measured by the Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd. As a result, the total plate thickness deviation was 0.55 μm or less, and the warpage amount was 35 μm or less.

First, the glass raw materials are prepared so as to have the glass composition of the samples 15 to 17 shown in Table 1, and then supplied to a glass melting furnace to melt at 1500 to 1600 ° C., and then the molten glass is supplied to a float molding apparatus. Then, each was molded so that the plate thickness was 0.8 mm. Both surfaces of the obtained glass substrate were mechanically polished to reduce the overall plate thickness deviation to less than 1 μm. After processing the obtained glass substrate to a thickness of φ300 mm × 0.8 mm, both surfaces thereof were polished by a polishing device. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together. During the polishing process, it was occasionally controlled so that a part of the glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. For each of the obtained polished glass substrates, the total plate thickness deviation and the amount of warpage were measured by the Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd. As a result, the total plate thickness deviation was 0.85 μm or less, and the warpage amount was 35 μm or less.

1, 27 Laminates 10, 26 Support glass substrates 11, 24 Processed substrates 12 Release layers 13, 21, 25 Adhesive layers 20 Support members 22 Semiconductor chips 23 Encapsulants 28 Wiring 29 Solder bumps

Claims (15)

A laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate.
The processed substrate comprises at least a semiconductor chip molded with an encapsulant.
The average linear thermal expansion coefficient of the support glass substrate in the temperature range of 20 to 200 ° C. is 66 × 10 ^-7 / ° C or more and 81 × 10 ^-7 / ° C or less, and the plate thickness of the support glass substrate is 0.6 mm or more. A laminated body having a liquid phase viscosity of less than 2.0 mm and a supporting glass substrate of 10000 dPa · s or more. The lamination according to claim 1, wherein the average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30 to 380 ° C. is 70 × 10 ^-7 / ° C. or higher and 85 × 10 ^{-7 / ° C. or lower.} body. The laminate according to claim 1 or 2, characterized by using as much as manufacturing processes of the semiconductor package. The laminate according to any one of claims 1 to 3, further comprising a molding confluence surface inside the support glass substrate. The laminate according to any one of claims 1 to 4, wherein the support glass substrate has a Young's modulus of 65 GPa or more. The supporting glass substrate has a glass composition of SiO ₂ 40 to 80%, Al ₂ O ₃ 1 to 20%, B ₂ O _{30 to} 20%, MgO 0 to 12%, CaO 0 to 10%, in terms of glass composition. Any of claims 1 to 5, which contains SrO 0 to 20%, BaO 0 to 20%, ZnO 0 to 10%, Na ₂ O 4 to 20%, and K _{2 O 0 to 15%.} The laminate described. Supporting glass substrate is a glass composition including, in _{mass%, SiO 2 60~75%, Al} 2 O 3 5~15%, B 2 O 3 5~20%, 0~5% MgO, CaO 0~10%, The laminate according to claim 6, wherein the laminate contains SrO 0 to 5%, BaO 0 to 5%, ZnO 0 to 5%, Na ₂ O 7 to 16%, and K _{2 O 0 to 8%.} The supporting glass substrate has a glass composition of _{40% by mass, SiO 2} 50 to 80%, Al ₂ O ₃ to 20%, B ₂ O _{30 to} 20%, MgO 0 to 5%, CaO 0 to 10%, SrO. The laminate according to claim 6, wherein the laminate contains 0 to 5%, BaO 0 to 5%, ZnO 0 to 5%, Na ₂ O 5 to 20%, and K _{2 O 0 to 10%.} Supporting glass substrate is a glass composition including, in _{mass%, SiO 2 60~75%, Al} 2 O 3 10~20%, B 2 O 3 0~10%, 0~5% MgO, CaO 0~5%, The laminate according to claim 6, wherein the laminate contains SrO 0 to 5%, BaO 0 to 5%, ZnO 0 to 5%, Na ₂ O 6 to 18%, and K _{2 O 0 to 8%.} Supporting glass substrate, by mass% as a glass _{composition, SiO 2 40~60%, Al 2} O 3 5~20%, B 2 O 3 0~20%, 0~5% MgO, CaO 0~10%, SrO The laminate according to claim 6, wherein the laminate contains 0 to 20%, BaO 0 to 20%, Na ₂ O 4 to 20%, and K _{2 O 0 to 10%.} Supporting glass substrate is a glass composition including, in _{mass%, SiO 2 44~54%, Al} 2 O 3 10~15%, B 2 O 3 0~15%, MgO 0~3.6%, CaO 3~8 The laminate according to claim 6, wherein the laminate contains%, SrO 4 to 15%, BaO 0 to 14%, Na ₂ O 4 to 15%, and K _{2 O 0 to 10%.} A claim characterized in that the support glass substrate has a wafer shape or a substantially disk shape having a diameter of 100 to 500 mm, the plate thickness deviation of the support glass substrate is 30 μm or less, and the warp amount of the support glass substrate is 60 μm or less. Item 2. The laminate according to any one of Items 1 to 11. The step of preparing the laminate according to any one of claims 1 to 12, and
A method for manufacturing a semiconductor package, which comprises a process of processing a processed substrate. The method for manufacturing a semiconductor package according to claim 13, wherein the processing process includes a step of wiring on one surface of the processed substrate. The method for manufacturing a semiconductor package according to claim 13, wherein the processing includes a step of forming solder bumps on one surface of the processed substrate.

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