JP6906803B2 - Probe and its manufacturing method - Google Patents

Description

The present invention relates to a probe and a method for manufacturing the probe, particularly a probe for inspecting a spin device and a method for manufacturing the probe.

Conventionally, as a probe of this type, a probe formed by coating carbon nanotubes with Pt (platinum), which is a non-magnetic material, has been proposed (see, for example, Non-Patent Document 1). In this probe, the tip of the probe is brought into contact with a thin film of Bi (bismus) as an object to be inspected, and a current is passed from the probe to the thin film to generate a spin-polarized current (spin current) in the thin film due to the Rashba effect. do. The spin state of the spin device is detected by measuring the voltage generated by the reverse spin Hall effect with respect to the spin current generated in this way.

Takeyuki Higashino, Toru Hirahara, Shuji Hasegawa, "Measurement of current-induced spin polarization in the surface state of bismuth ultrathin films", Physical Society of Japan 2011 Autumn Meeting, September 23, 2011

However, in the above-mentioned probe, since it is necessary to pass an electric current through the spin device, the spin device is limited to one formed of a conductor. Further, since a current is passed through the spin device, the measured voltage includes a voltage caused by the current, which makes it difficult to measure the voltage caused by the spin current. Therefore, it is desired to inject the spin current while suppressing the inflow of the current into the spin device.

It is also desired to measure the spin pressure of a spin device with such a probe.

A main object of the probe of the present invention and a method for manufacturing the same is to provide a probe capable of injecting a spin current and measuring a spin pressure of a spin device while suppressing the inflow of an electric current into the spin device. And.

The probe of the present invention and the method for producing the same have adopted the following means in order to achieve the above-mentioned main object.

The probe of the present invention
A probe used to inspect spin devices
A substrate formed of an insulator or a semiconductor, a first layer formed of a conductive magnetic material, and a second layer formed of a conductive non-magnetic material are laminated in this order on the tip portion. And
The second layer is formed so that the thickness becomes a predetermined thickness predetermined as a thickness thinner than the spin relaxation.
The gist is that.

The probe of the present invention has a substrate formed of an insulator or a semiconductor, a first layer formed of a conductive magnetic material, and a second layer formed of a conductive non-magnetic material at the tip portion. , Are stacked in this order. The second layer is formed so that the thickness becomes a predetermined thickness predetermined as a thickness thinner than the spin relaxation. When a current is passed between the first layer and the second layer, a current flows at the interface between the first layer and the second layer, and the direction of the current and the direction of magnetization of the magnetic material are set near this interface of the second layer. Corresponding spin accumulation occurs and spin pressure is generated. The second layer is formed to a predetermined thickness. Therefore, it is possible to inject a spin current from the second layer into the spin device by passing a current between the first layer and the second layer in a state where the second layer at the tip of the probe is in contact with the spin device. can. It is not necessary to pass an electric current through the spin device when injecting this spin current. Further, when the second layer at the tip of the probe is brought into contact with a spin device in which spin pressure is generated, a current is generated at the interface between the first layer and the second layer due to spin diffusion, and the first layer and the second layer are generated. An electromotive force is generated between and. At this time, since the flowing current is proportional to the spin pressure, the spin pressure of the spin device can be measured by measuring the current. As a result, it is possible to provide a probe capable of injecting a spin current and measuring the spin pressure of the spin device while suppressing the current from flowing into the spin device. Here, the "spin device" refers to a device that operates by utilizing the electric charge and spin of an electron.

In such a probe of the present invention, the second layer may be formed so as to have a thickness of not more than twice the spin relaxation length of the non-magnetic material.

Further, in the probe of the present invention, the magnetic material may be any one of Ni, Co, Fe, Gd, FeNi alloy, permalloy, mumetal, samarium cobalt, Nd, Al—Ni—Co, and ferrite.

Further, in the probe of the present invention, the non-magnetic material is Cu, Ag, Al, Au, Pt, Rh, Pd, Ir, Ru, Os, Al-Cu, Cu-Sn, Cu-Au, Cu-Be. It may be one of them.

Then, in the probe of the present invention, a third layer formed of a conductor having a higher electrical conductivity than the conductive magnetic material may be provided between the substrate and the first layer. By passing a current between the third layer, the first layer, and the second layer, the same current is passed between the first layer and the second layer without the third layer, as compared with the case where the same current is passed between the first layer and the second layer. , The potential gradient on the surface of the second layer opposite to the first layer becomes smaller. As a result, it is possible to suppress the local flow of current through the spin device when the surface of the second layer opposite to the first layer is brought into contact with the spin device. In this case, the conductor may be any of Cu, Ag, Al, and Au.

The method for manufacturing the probe of the present invention
Used for inspecting spin devices, at the tip, a substrate formed of an insulator or semiconductor, a first layer formed of a conductive magnetic material, and a second layer formed of a conductive non-magnetic material. And are laminated in this order, and the second layer is a method for manufacturing a probe, which is formed so that the thickness becomes a predetermined thickness predetermined as a thickness thinner than the spin relaxation. hand,
The first step of forming a magnetic material layer from the conductive magnetic material on at least a part of the surface of the substrate, and
The second step of forming the non-magnetic material layer on the magnetic material layer by the conductive non-magnetic material, the thickness of which is thinner than the thickness at which the spin is relaxed.
A third step of dividing the substrate on which the magnetic material layer and the non-magnetic material layer are formed at a portion where the magnetic material layer and the non-magnetic material layer are laminated.
The gist is to prepare.

In the method for manufacturing a probe of the present invention, a magnetic material layer is formed of a conductive magnetic material on at least a part of the surface of a substrate formed of an insulator or a semiconductor, and a non-conductive non-conductive material is formed on the magnetic material layer. A substrate in which a non-magnetic material layer is formed by a magnetic material so that the thickness becomes a predetermined thickness predetermined as a thickness thinner than the spin relaxation, and the magnetic material layer and the non-magnetic material layer are formed. Is divided at the portion where the magnetic material layer and the non-magnetic material layer are laminated. As a result, it is used for inspection of spin devices, and is formed at the tip by a substrate formed of an insulator or a semiconductor, a first layer formed of a conductive magnetic material, and a conductive non-magnetic material. The second layer and the second layer are laminated in this order, and the second layer can manufacture a probe formed to a predetermined thickness. Here, the "spin device" refers to a device that operates by utilizing the two degrees of freedom of charge and spin of an electron.

In the method for producing a probe of the present invention, in the first step, a high conductor layer is formed on the surface of the substrate by a conductor having a higher electrical conductivity than the conductive magnetic material, and then the high conductor layer is formed. The magnetic material layer may be formed on the magnetic material layer. In this way, it is possible to manufacture a probe having a third layer formed of a conductor having a higher electrical conductivity than a conductive magnetic material between the substrate and the first layer.

Further, in the method for manufacturing a probe of the present invention, in the third step, the substrate on which the magnetic material layer and the non-magnetic material layer are formed by stealth dicing or cleavage is formed on the magnetic material layer and the non-magnetic material layer. It may be divided at the portion where the magnetic material layer is laminated.

It is the schematic which shows the outline of the end face of the probe 20 as one Example of this invention. It is an enlarged view of the tip part 20a of a probe 20. It is the schematic which shows the outline of the side surface which looked at the tip part 20a from the direction A in FIG. It is explanatory drawing which shows the state when the current source 30 is connected to the probe 20. It is explanatory drawing for demonstrating the structure of the model 70 of the tip part 20a for simulating the state of the spin flow in a probe 20. It is explanatory drawing which shows the result of the simulation of the distribution of the spin polarization ratio at the time of passing the electric current between the 1st layer 24 and the 2nd layer 26 in the state which the 2nd layer 26 is not in contact with a sample in a model 70 .. It is explanatory drawing which shows the result of the simulation of the distribution of the spin polarization ratio in the model 70 when the model 70 in which spin accumulation occurs is brought into contact with a sample. It is explanatory drawing which shows the result of the simulation of the distribution of the voltage generated in the model 70 when the model 70 in which spin accumulation occurs is brought into contact with a sample. It is explanatory drawing which shows the state of having verified that the spin current is injected from the probe 20 into the spin device. It is a graph which shows the measurement result of the dependence of the angle θ of resistance Rs. It is a flowchart which shows an example of the manufacturing flow of a probe 20. It is explanatory drawing for demonstrating the state of the substrate 60 after executing the process of step S100. It is explanatory drawing for demonstrating the state of the substrate 60, the Ni layer 62, and the Cu layer 64 after executing the process of step S110. It is explanatory drawing for demonstrating the state after the substrate 60 was divided in the process of step S120. It is a structural schematic diagram which shows the outline of the structure of the tip part 220a of the probe 220 of the modification. It is the schematic which shows the outline of the side surface which looked at the tip 220a of the probe 220 of the modified example from the B direction of FIG. It is a structural schematic diagram which shows the outline of the structure of the tip part 320a of the probe 320 of the modification. It is the schematic which shows the outline of the side surface which looked at the tip | tip 320a of the probe 320 of the modified example from the C direction of FIG.

Next, a mode for carrying out the present invention will be described with reference to examples.

FIG. 1 is a schematic view showing an outline of an end face of a probe 20 as an embodiment of the present invention. FIG. 2 is an enlarged view of the tip portion 20a of the probe 20. FIG. 3 is a schematic view showing an outline of a side surface of the tip portion 20a as viewed from the direction A in FIG.

As shown in FIGS. 1 to 3, the probe 20 is formed of Si (silicon), and the first layer 24 and the second layer 26 are laminated in this order on the tip of a long plate-shaped substrate 22 as a whole. Has been done.

The first layer 24 is formed of Ni (nickel) so as to have a thickness of 100 nm, a length L1 in the longitudinal direction of 40 μm, and a length L2 in the lateral direction of 10 μm in a substantially rectangular shape. The first layer 24 is arranged on the surface of the substrate 22 along the end side 22b of the substrate 22.

The second layer 26 is formed of Cu (copper) so as to have a substantially rectangular shape having a predetermined thickness D2, a length L3 in the longitudinal direction of 40 μm, and a length L4 in the lateral direction of 10 μm. The predetermined thickness D2 is a thickness predetermined by experiments and analyzes as a thickness thinner than the spin relaxation in the second layer 26, and is about twice or less the spin relaxation length of Cu. .. In the embodiment, the predetermined thickness D2 is set to 100 nm. The second layer 26 is arranged along an end side 22c that is substantially perpendicular to the end side 22b of the substrate 22 so that one end portion overlaps one end portion of the first layer 24.

With such a configuration, the tip portion 20a of the probe 20 has a structure in which the substrate 22, the first layer 24, and the second layer 26 are laminated.

Next, the operation of the probe 20 configured in this way will be described. FIG. 4 is an explanatory diagram showing a state when the current source 30 is connected to the probe 20. When the current source 30 is connected to the first layer 24 and the second layer 26 and a current is passed between the first layer 24 and the second layer 26, a current is generated at the interface between the first layer 24 and the second layer 26. It flows. Since Ni is a magnetic material and Cu is a non-magnetic material, when a current flows through the interface between the first layer 24 and the second layer 26, the direction of the current and the direction of the Ni in the vicinity of this interface of the second layer 26 Spin pressure is generated by accumulating spins according to the direction of magnetization. The second layer 26 is formed to have a predetermined thickness D2, that is, a thickness thinner than the spin relaxation in the second layer 26. Therefore, the first layer 24 and the second layer 26 are in a state where the surface 26a of the second layer 26 of the portion where the first layer 24 and the second layer 26 of the tip portion 20a of the probe 20 are laminated is in contact with the spin device. By passing a current between and, a spin current can be injected from the second layer 26 into the spin device.

FIG. 5 is an explanatory diagram for explaining the configuration of the model 70 of the tip portion 20a for simulating the state of the spin current in the probe 20. The model 70 is a model of the tip portion 20a of the probe 20 of the embodiment, and has the same dimensions as the tip portion 20a. In the figure, the x-axis and the y-axis of the arrows indicate the directions of the x-axis and the y-axis of FIGS. 6 to 8, respectively. In the simulation, a two-fluid model that treats spin as two types of charges is used. In this model, Ni has a spin diffusion length of 3 × ^10-9 m, a spin polarization rate of 0.23, and a resistivity of 6.99 × ^10-8 Ωm. Cu has a spin diffusion length of 1 × ^10-6 m, a spin polarization rate of 0, and a resistivity of 1.68 × ^10-8 Ωm.

FIG. 6 shows the result of simulation of the distribution of spin polarization when a current is passed between the first layer 24 and the second layer 26 in the model 70 without the second layer 26 in contact with the sample. It is explanatory drawing. In the model 70, as shown in the figure, when a current is passed between the first layer 24 and the second layer 26, spin accumulation occurs.

FIG. 7 is an explanatory diagram showing the result of simulation of the distribution of the spin polarization ratio in the model 70 when the model 70 in which the spin accumulation occurs is brought into contact with the sample. FIG. 8 is an explanatory diagram showing the result of simulation of the distribution of the voltage generated in the model 70 when the model 70 in which the spin accumulation occurs is brought into contact with the sample. In FIG. 8, the vertical axis represents the voltage generated at the tip portion 20a when a current of 1 mA is passed between the first layer 24 and the second layer 26. When the model 70 in which the spin accumulation occurs is brought into contact with the sample, as shown in FIG. 7, the spin decreases in the range of about 1 μm in the plane direction. In the model 70, a spin in a range of about 1 μm in the plane direction is injected into the sample. In the model 70, a range of about 1 μm in the plane direction, that is, a relatively wide range of spins flows into the sample, so that even when the current density at the interface between the first layer 24 and the second layer 26 is small, it is large. A spin current can be injected into the sample. As shown in FIG. 8, it can be seen that the voltage disturbance generated by bringing the model 70 in which spin accumulation occurs into contact with the sample is sufficiently small.

FIG. 9 is an explanatory diagram showing a state of verifying that a spin current is injected from the probe 20 into the spin device. In FIG. 9, the current source 30 shown in FIG. 4 is connected to the probe 20, but the current source 30 is not shown. Here, as the spin device, a thin wire 40 having a thickness of 100 nm, a length in the longitudinal direction of 90 μm, and a length in the lateral direction of 1 μm is used by Au. Further, the ambient temperature is set to 7K, and 1 mA is generated between the current source 30 and the first layer 24 and the second layer 26 of the probe 20 in a state where the surface 26a of the second layer 26 of the tip portion 20a of the probe 20 is in contact with the thin wire 40. The voltage Vs and the current Is generated in the thin wire 40 are detected by the terminals 50 and 52, and the voltage Vs is divided by the current Is flowing in the thin wire 40. The dependence of the angle between one side of the direction and the thin line 40) was measured. The angle θ is changed by rotating the thin wire 40 with the probe 20 fixed.

FIG. 10 is a graph showing the measurement result of the dependence of the angle θ of the resistance Rs. As shown in the figure, since the resistance R shows a sine curve with respect to the angle θ, it can be seen that the reverse spin Hall effect is generated, that is, the spin current is injected from the probe 20. In this way, by passing a current between the first layer 24 and the second layer 26 in a state where the surface 26a of the second layer 26 of the tip portion 20a of the probe 20 is in contact with the spin device, the second layer 26 Can inject a spin current into the spin device from. Since it is not necessary to pass a current through the spin device when injecting the spin current, the spin current can be injected while suppressing the current from flowing into the spin device. Further, it is not necessary to pass a current through the spin device, and the spin current can be injected even when the spin device is formed of an insulator.

Further, when the surface 26a of the second layer 26 of the tip portion 20a is brought into contact with the spin device in which the spin pressure is generated, spin flows to the interface between the first layer 24 and the second layer 26 due to spin diffusion, and the second layer 26 It is considered that an electromotive force is generated between the first layer 24 and the second layer 26. At this time, since the flowing current is proportional to the spin pressure generated in the spin device, the voltage generated between the first layer 24 and the second layer 26 or between the first layer 24 and the second layer 26 It is considered that the spin voltage of the spin device can be measured by measuring the flowing current.

Subsequently, a method for manufacturing the probe 20 will be described. FIG. 11 is a flowchart showing an example of the manufacturing flow of the probe 20.

First, a Ni layer 62 made of Ni (nickel) is formed on the substrate 60 made of Si (silicon) (step S100). FIG. 12 is an explanatory diagram for explaining the state of the substrate 60 after executing the step S100. In the Ni layer 62, Ni (nickel) having a thickness of 100 nm is deposited on the substrate 60, and the length in the longitudinal direction is twice the length L1 in the central portion of the substrate 60 by the EB lithography method. Is formed so that the length of the is substantially rectangular, which is twice the length L2.

Subsequently, a Cu layer 64 made of Cu (copper) is formed on the substrate 60 on which the Ni layer 62 is formed (step S110). FIG. 13 is an explanatory diagram for explaining the state of the substrate 60, the Ni layer 62, and the Cu layer 64 after executing the step S110. Cu (copper) is deposited on the Cu layer 64 so that the thickness becomes a predetermined thickness D2, and the longitudinal direction is 90 degrees with the longitudinal direction of the Ni layer 62 at the central portion of the substrate 60 by using the EB lithography method. The length in the longitudinal direction is twice the length L3, and the length in the lateral direction is twice the length L4.

Next, using the stealth dicing method using a stealth dicing apparatus, the substrate 60 on which the Ni layer 62 and the Cu layer 64 are formed is divided at a portion where the Ni layer 62 and the Cu layer 64 are laminated (step S120). , End production. FIG. 14 is an explanatory diagram for explaining a state after the substrate 60 is divided in the step S120. By such a step, as shown in the figure, two probes 20 and two probes 120 in which the first layer 24 and the second layer 26 are arranged line-symmetrically with the probe 20 can be manufactured. Similar to the probe 20, the probe 120 injects a spin current into the spin device by passing a current between the first layer 24 and the second layer 26, and the spin pressure of the spin device is adjusted to the first layer 24. , Can function as a probe to measure as a voltage or current between layers 26.

According to the probe 20 of the above-described embodiment, the substrate 22, the first layer 24 formed of Ni, and Cu have a predetermined thickness D2 (thinner than the spin relaxation) at the tip portion 20a. By stacking the second layer 26 formed so as to be) in this order, it is possible to inject a spin current and measure the spin pressure of the spin device while suppressing the current from flowing into the spin device. Probes can be provided.

Further, according to the method for manufacturing the probe 20 of the embodiment, a Ni layer 62 is formed on the surface of the substrate 60 formed of Si, and a part of the Ni layer is formed on the surface of the substrate 22 on which the Ni layer 62 is formed. The substrate 22 on which the Cu layer 64 having a predetermined thickness D2 was formed by Cu so as to overlap the 62, and the Ni layer 62 and the Cu layer 64 were formed by the stealth dicing device, was combined with the Ni layer 62 and the Cu layer 64. Is divided at the laminated part. Thereby, the probe 20 can be manufactured.

In the probe 20 of the embodiment, the first layer 24 and the second layer 26 are laminated on the end portion of the elongated plate-shaped substrate 22, but the substrate 22 and the first layer 24 and the second layer 26 are laminated on the tip portion 20a of the probe 20. Since it is sufficient to form a laminated structure with the two layers 26, for example, the length of the substrate 22 in the longitudinal direction in FIG. 1 is set to the length L1, and the substrate 22, the first layer 24, and the second layer 26 are laminated. May be attached to the end of another long plate-shaped member.

In the method for manufacturing the probe 20 of the embodiment, the substrate 22 on which the Ni layer 62 and the Cu layer 64 are formed is divided by a stealth dicing apparatus at a portion where the Ni layer 62 and the Cu layer 64 are laminated. However, the method of dividing the substrate 22 on which the Ni layer 62 and the Cu layer 64 are formed at the portion where the Ni layer 62 and the Cu layer 64 are laminated is not limited to the stealth dicing apparatus, for example. Any method may be used as long as it is a method of dividing the portion where the Ni layer 62 and the Cu layer 64 are laminated, such as cleavage.

In the probe 20 of the embodiment, the first layer 24 and the second layer 26 are formed in a substantially rectangular shape, one end thereof is arranged so as to overlap one end of the first layer 24, and the tip portion of the probe 20 is formed. A spin current is injected into the spin device by passing an electric current through the first layer 24 and the second layer 26 in a state where the surface 26a of the second layer 26 of 20a is in contact with the spin device. At this time, a potential gradient is generated on the surface 26a of the second layer 26, and a local current is generated in the spin device due to this potential gradient. In order to suppress such inconvenience, the second layer 226 formed of Cu is formed into a substantially L-shape, as in the tip 220a of the probe 220 of the modified example illustrated in FIGS. 15 and 16, a substantially L-shape is bent. A first layer 224 formed of Ni may be arranged between the portion and the substrate 22, and a current may be passed between both ends of the first layer 224 and the substantially L-shape of the second layer 226. Since the current flows through the second layer 226 from two directions, the first layer 224 and the second layer 226 are laminated as compared with the probe 20 in which the current flows through the second layer 26 from one direction. The potential gradient in the present part can be made smaller. As a result, when the surface 226a of the second layer 226 is brought into contact with the spin device, it is possible to suppress the local current flow to the spin device. Further, as in the tip 320a of the probe 320 of the modified example illustrated in FIGS. 17 and 18, Cu (copper), Ag (silver), Al (aluminum), and Au are formed between the first layer 224 and the substrate 22. A third layer 328 having a higher electrical conductivity than a magnetic material forming the first layer 224 such as (gold) may be formed. In this case, by passing a current between both ends of the second layer 226 and the third layer 328, it is possible to further suppress the local flow of the current through the spin device. In the manufacturing flow illustrated in FIG. 11, the probe 320 of the modified example has a substrate 60 of Cu (copper), Ag (silver), Al (aluminum), Au (gold), or the like in the process of step S100. It may be produced by forming a Ni layer 62 after forming a highly conductive layer having higher electrical conductivity than the magnetic material forming the 1st layer 224.

In the probe 20 of the embodiment and the probes 220 and 320 of the modified example, the second layers 26 and 226 are formed so as to partially overlap the first layers 24 and 224, but the first layers 24 and 224 and the second layer are formed. The layers 26 and 226 may be formed in the same shape so that all of the second layers 26 and 226 overlap with the first layers 24 and 224. In this case, wiring or the like connecting the first layers 24,224 and the second layers 26,226 and the current source 30 may be provided.

In the probe 20 of the embodiment and the probes 220 and 320 of the modified example, the substrate 22 is formed of Si, but it may be formed of another semiconductor or an insulator.

In the probe 20 of the embodiment and the probes 220 and 320 of the modified example, the first layers 24 and 224 are formed of Ni, but any conductive magnetic material may be used, for example. It may be formed from any of Co (cobalt), Fe (iron), Gd (gadonium), FeNi alloy, permalloy, mumetal, samarium cobalt, Nd (neodymium), Al-Ni—Co, and ferrite.

In the probe 20 of the example and the probes 220 and 320 of the modified example, the second layers 26 and 226 are formed of Cu, but any conductive non-magnetic material may be used, for example. Ag, Al (aluminum), Au, Pt (platinum), Rh (rhodium), Pd (palladium), Ir (iridium), Ru (ruthenium), Os (osmium), Al-Cu, Cu-Sn (tin), It may be formed by either Cu-Au or Cu-Be (berylium).

Although the embodiments for carrying out the present invention have been described above with reference to examples, the present invention is not limited to these examples, and various embodiments are used without departing from the gist of the present invention. Of course, it can be done.

The present invention can be used in the probe manufacturing industry and the like.

Claims (8)

A probe used to inspect spin devices
A substrate formed of an insulator or a semiconductor, a first layer formed of a conductive magnetic material, and a second layer formed of a conductive non-magnetic material are laminated in this order on the tip portion. And
The second layer is formed so that the thickness becomes a predetermined thickness predetermined as a thickness thinner than the spin relaxation.
probe. The probe according to claim 1.
The second layer is formed to have a thickness of not more than twice the spin relaxation length of the non-magnetic material.
probe. The probe according to claim 1 or 2.
The magnetic material is any one of Ni, Co, Fe, Gd, FeNi alloy, permalloy, mumetal, samarium cobalt, Nd, Al-Ni—Co, and ferrite.
probe. The probe according to any one of claims 1 to 3.
The non-magnetic material is any one of Cu, Ag, Al, Au, Pt, Rh, Pd, Ir, Ru, Os, Al-Cu, Cu-Sn, Cu-Au, and Cu-Be.
probe. The probe according to any one of claims 1 to 4.
A third layer formed between the substrate and the first layer from a conductor having a higher electrical conductivity than the conductive magnetic material,
A probe equipped with. The probe according to claim 5.
The conductor is any of Cu, Ag, Al, and Au.
probe. Used for inspecting spin devices, at the tip, a substrate formed of an insulator or semiconductor, a first layer formed of a conductive magnetic material, and a second layer formed of a conductive non-magnetic material. And are laminated in this order, and the second layer is a method for manufacturing a probe, which is formed so that the thickness becomes a predetermined thickness predetermined as a thickness thinner than the spin relaxation. hand,
The first step of forming a magnetic material layer from the conductive magnetic material on at least a part of the surface of the substrate, and
A second step of forming a non-magnetic material layer on the magnetic material layer so that the thickness becomes the predetermined thickness by the conductive non-magnetic material.
A third step of dividing the substrate on which the magnetic material layer and the non-magnetic material layer are formed at a portion where the magnetic material layer and the non-magnetic material layer are laminated.
A method of manufacturing a probe comprising. The method for manufacturing a probe according to claim 7.
In the first step, a high conductor layer is formed on the surface of the substrate by a conductor having a higher electrical conductivity than the conductive magnetic material, and then the magnetic material layer is formed on the high conductor layer.
How to manufacture the probe.

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