JP6946864B2 - Plating method for glass substrate, wiring structure and glass interposer - Google Patents

Description

The embodiments of the present disclosure relate to a plating method having improved adhesion to a glass substrate and a method for manufacturing a glass interposer.

In recent years, interposers using silicon or glass as a base material, which is less susceptible to moisture absorption and expansion and contraction than an organic base material, have been developed. In particular, the glass interposer is excellent in productivity because it can be collectively processed using a panel larger than that of the silicon interposer, and through holes can be formed by laser processing or the like.

The glass interposer is provided with a through electrode called a TGV (Through-Glass Via) in which a fine through hole is formed inside a glass base material and filled with a conductive substance. At this time, the through hole is generally filled with the conductive substance by plating. However, the adhesion of metal, which is a conductive substance, to the glass substrate is weak and it is easy to peel off. Therefore, a method of forming an adhesion layer on the surface of the glass base material to improve the adhesion with the metal has been proposed. For example, Reference 1 describes a method of forming an adhesion layer on a glass substrate with a silane coupling agent, forming a catalyst layer on the adhesion layer, and forming an electroless plating film on the catalyst layer. ..

Further, in Patent Document 2, a zinc oxide film is formed by electroless plating as an adhesion layer on glass, copper is precipitated by electroless film formation and electrolytic plating, and the formed copper is used as a seed layer and copper is electroplated. The method of filling is described.

Japanese Unexamined Patent Publication No. 2005-350747 Japanese Unexamined Patent Publication No. 2015-156424

One of the objects of the embodiment of the present disclosure is to provide a plating method having improved adhesion to a glass substrate. Further, one of the objects of the embodiment of the present disclosure is to provide a method for manufacturing a glass interposer having improved adhesion to a glass substrate.

According to one embodiment of the present disclosure, a step of forming an adhesion layer on the surface of a glass substrate, a step of forming a metal layer by plating on the adhesion layer, and a step of sputtering on at least a part of the surface of the adhesion layer. Provided is a step of forming a base metal layer and a method of plating a glass substrate comprising.

The base metal layer may be integrally formed on the surface of the adhesion layer and the surface of the metal layer.

The steps of forming the metal layer include a step of forming a first metal layer on the adhesion layer by electroless plating and a step of forming a second metal layer on the surface of the first metal layer by electroplating. The base metal layer may be integrally formed on the bottom surface and the side surface of the hole formed in the first metal layer, and the hole may be filled with the second metal layer.

The base metal layer may be formed on the entire surface of the adhesion layer.

The steps of forming the metal layer include a step of forming a first metal layer on the adhesion layer by electroplating and a step of forming a second metal layer on the surface of the first metal layer by electroplating. And, the holes formed in the first metal layer may be filled with the second metal layer.

The base metal layer is formed by a step of forming a first base metal layer containing a metal selected from titanium or chromium by sputtering on the surface of the adhesion layer, and by sputtering on the surface of the first base metal layer. It may include a step of forming a second base metal layer containing a metal selected from the group consisting of copper, gold and nickel.

Further, according to one embodiment of the present disclosure, a glass base material, an adhesion layer arranged on the surface of the glass base material, a first metal layer arranged in contact with the adhesion layer, and the first metal layer. A base metal layer arranged in contact with the metal layer 1 and arranged in contact with the bottom surface and side surfaces of holes existing on the surface of the first metal layer, and arranged in contact with the base metal layer. A wiring structure comprising a second metal layer is provided.

Further, according to one embodiment of the present disclosure, a glass base material, an adhesion layer arranged on the surface of the glass base material, a base metal layer arranged in contact with the adhesion layer, and the base metal layer. Provided is a wiring structure including a first metal layer arranged in contact with the first metal layer and a second metal layer arranged in contact with the first metal layer.

The second metal layer may be arranged in contact with the first metal layer, and may be arranged in contact with the bottom surface and the side surface of the holes existing on the surface of the first metal layer.

The base metal layer is disposed on the surface of a first base metal layer containing a metal selected from titanium or chromium and the first base metal layer, and is selected from the group consisting of copper, gold and nickel. A second base metal layer containing a metal may be provided.

Further, according to one embodiment of the present disclosure, a glass base material having through holes having openings in the first surface and the second surface, and the first surface and the second surface of the glass base material. An adhesion layer arranged in contact with the surface and the surface of the through hole, a first metal layer arranged on the surface of the adhesion layer, and an adhesion layer arranged in contact with the first metal layer. A glass interposer including a base metal layer arranged in contact with the bottom surface and side surfaces of holes existing on the surface of the first metal layer, and a second metal layer arranged in contact with the base metal layer. I will provide a.

Further, according to one embodiment of the present disclosure, a glass base material having through holes having openings in the first surface and the second surface, and the first surface and the second surface of the glass base material. The adhesion layer arranged in contact with the surface and the surface of the through hole, the base metal layer arranged in contact with the surface of the adhesion layer, and the first arrangement arranged in contact with the base metal layer. Provided is a glass interposer including a metal layer and a second metal layer arranged in contact with the first metal layer.

The second metal layer may be arranged in contact with the first metal layer, and may be arranged in contact with the bottom surface and the side surface of the holes existing on the surface of the first metal layer.

The base metal layer is disposed on the surface of a first base metal layer containing a metal selected from titanium or chromium and the first base metal layer, and is selected from the group consisting of copper, gold and nickel. A second base metal layer containing a metal may be provided.

According to one embodiment of the present disclosure, it is possible to provide a plating method having improved adhesion to a glass substrate. Further, according to one embodiment of the present disclosure, it is possible to provide a method for manufacturing a glass interposer having improved adhesion to a glass substrate.

It is a schematic diagram explaining the plating method to the glass base material in one Embodiment of this disclosure. It is a schematic diagram explaining the plating method to the glass base material in one Embodiment of this disclosure. It is a schematic diagram explaining the plating method to the glass base material in one Embodiment of this disclosure. It is a schematic diagram explaining the manufacturing method of the wiring structure in one Embodiment of this disclosure. It is a schematic diagram explaining one Embodiment of the plating method to the glass base material of this disclosure. It is a schematic diagram explaining one Embodiment of the plating method to the glass base material of this disclosure. It is a schematic diagram explaining one Embodiment of the plating method to the glass base material of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the wiring structure of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the manufacturing method of the glass interposer of this disclosure. The upper figure of (a) is an optical microscope image of the pinhole 923 generated by the conventional plating method, and the lower figure is an optical microscope image observed from the back surface of the glass substrate at a position corresponding to the upper figure. , (B) and (c) are scanning electron microscope images of pinholes 923 generated by the conventional plating method, and the lower figure of (b) is a position corresponding to the upper figure. It is an optical microscope image of the peeling part 925 observed from the back surface of a glass base material. (A) is a scanning electron microscope image of a cross section of a peeling portion 925, and (b) is a schematic view showing a peeling portion. It is a schematic diagram explaining one Embodiment of the semiconductor device using the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the semiconductor device using the glass interposer of this disclosure. It is a schematic diagram explaining one Embodiment of the semiconductor device using the glass interposer of this disclosure.

Hereinafter, the method for plating the glass substrate and the method for manufacturing the glass interposer of the present disclosure will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not construed as being limited to these embodiments. In the drawings referred to in the present embodiment, the same part or a part having a similar function is given the same code or a similar code (a code in which A, B, etc. are simply added after the number), and the process is repeated. The description of may be omitted. Further, the dimensional ratio of the drawing (ratio between each configuration, ratio in the vertical / horizontal height direction, etc.) may differ from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

FIG. 17 is a diagram showing a pinhole 923 and a peeled portion 925 generated by a conventional plating method. The upper part of FIG. 17A is an optical microscope image of a pinhole 923. The lower part of FIG. 17A is an optical microscope image of the pinhole 923 observed from the back surface of the glass substrate at the position corresponding to the upper part. The upper part of FIG. 17B is a scanning electron microscope image of the pinhole 923 and the peeled portion 925 generated by the conventional plating method, and the lower part of FIG. 17B is the image of FIG. 17B. It is an optical microscope image of the peeling part 925 observed from the back surface of the glass base material at the position corresponding to the upper part. FIG. 17C is a scanning electron microscope image of the pinhole 923 generated by the conventional plating method.

Further, FIG. 18A is a scanning electron microscope image of a cross section of the peeling portion 925, and FIG. 18B is a schematic view showing the peeling portion. The device 900 formed by the conventional plating method shown in FIG. 18B includes a glass base material 901, an adhesion layer 911 arranged on the surface of the glass base material 901, and a catalyst layer 913 arranged on the surface of the adhesion layer 911. It includes a first metal layer 921 arranged on the surface of the catalyst layer 913 and a second metal layer 941 arranged on the surface of the first metal layer 921. Here, the first metal layer 921 is formed by electroless plating, and the second metal layer 941 is formed by electrolytic plating. Note that FIG. 18B shows an example of a device having the same layer structure on both sides of the facing surfaces of the glass base material 901.

As shown in FIG. 18B, in the device 900, the first metal layer 921 and the first metal layer 921 arranged under the glass base material 901 are arranged by arranging the adhesion layer 911 on the surface of the glass base material 901. The metal layer 941 of No. 2 can obtain adhesion to the glass base material 901. However, in the conventional plating method, since pinholes are generated in the metal layer formed by electroless plating, the strong acid contained in the electrolytic plating solution invades the pinholes 923 and dissolves a part of the adhesion layer. As a result, the material constituting the adhesion layer 911 is gasified, and the pressure causes the first metal layer 921 to peel off from the glass base material 901, resulting in a peeled portion 925. Therefore, the present disclosure has clarified that the conventional plating method does not sufficiently improve the adhesion even if the adhesion layer is arranged.

1 to 3 are schematic views illustrating an embodiment of a plating method for a glass substrate of the present disclosure. Further, FIG. 4 is a schematic view illustrating an embodiment of a method for manufacturing a wiring structure using the method for plating a glass substrate of the present disclosure. The method for plating the glass substrate of the present disclosure includes a step of forming an adhesion layer 111 on the surface of the glass substrate 101, a step of forming a metal layer by plating on the adhesion layer 111, and at least the surface of the adhesion layer 111. A step of forming the base metal layer 130 by sputtering is provided in part.

The glass base material 101 is prepared (FIG. 1 (a)). As the glass base material 101, a known glass substrate used for a glass interposer can be used. The thickness of the glass base material 101 is not particularly limited, but for example, a substrate having a thickness of 100 μm or more and 800 μm or less can be used. The thickness of the glass base material 101 is more preferably 200 μm or more and 400 μm or less. When the base material is thinner than the lower limit of the thickness of the base material, the deflection of the base material becomes large. As a result, handling in the manufacturing process becomes difficult, and the base material warps due to the internal stress of the thin film or the like formed on the base material. Further, if the base material is thicker than the upper limit of the thickness of the base material, the process of forming through holes becomes longer, the manufacturing process becomes longer, and the manufacturing cost increases, which is not preferable when forming a glass interposer. ..

The adhesion layer 111 is formed on the surface of the glass base material 101 (FIG. 1 (b)). The adhesion layer 111 can be formed, for example, by forming zinc oxide on the surface of the glass base material 101. The adhesion layer 111 can be formed by, for example, a sol-gel method using an ethanol solution containing zinc acetate dihydrate, praseodymium acetate, and diethanolamine. The adhesion layer 111 can also be formed by an organometallic thermal decomposition method (MOD method) using a 1-methoxy-2-propanol solution of zinc 2-ethylhexanoate. A dip coating method or a coating method can be used for the adhesion layer 111 using these methods. The adhesion layer 111 can be formed as a zinc oxide film by applying these solutions and then firing them. Further, the adhesion layer 111 may be formed by electroless plating using a solution containing zinc sulfate and dimethylamine borane (DMAB). Palladium chloride can be used as a catalyst for electroless plating. The step of forming the adhesion layer 111 is not limited to these methods.

Although FIG. 1B shows an example in which the adhesion layer 111 is formed on both surfaces of the opposite surfaces of the glass base material 101, the present disclosure is not limited to this. The adhesion layer 111 may be formed on only one side of the glass base material 101 by a coating method, or the adhesion layer 111 may be formed on both sides of the glass base material 101 by a dip coating method or electroless plating. The adhesion layer 111 may be removed from one side.

In order to arrange the metal layer on the surface of the adhesion layer 111, the catalyst layer 113 is formed on the surface of the adhesion layer 111 (FIG. 1 (c)). Palladium or the like can be used for the catalyst layer 113, but the catalyst layer 113 is not limited to this. The catalyst layer 113 can be formed, for example, by a dipping method using palladium chloride.

The steps of forming the metal layer include a step of forming the first metal layer 121 on the adhesion layer 111 by electroless plating and a step of forming a second metal layer 151 on the surface of the first metal layer 121 by electroplating. It is equipped with a process. Here, the base metal layer 130 is integrally formed on the bottom surface and the side surface of the hole 123 formed in the first metal layer 121, and the hole 123 is filled with the second metal layer 151.

The first metal layer 121 is formed on the adhesion layer 111 via the catalyst layer 113 by electroless plating. The first metal layer 121 contains a metal selected from the group consisting of copper, gold and nickel. As a method for forming the first metal layer 121 using a plating solution containing these metals, known electroless plating can be used, and therefore detailed description thereof will be omitted. Here, holes (pinholes) 123 frequently occur in the first metal layer 121 formed by electroless plating (FIG. 1 (d)). If electrolytic plating is performed in the state where the holes 123 are present in the first metal layer 121, the metal layer will be peeled off as described above.

In the present disclosure, the problem that the metal layer is peeled off is solved by preventing the electrolytic plating solution from coming into contact with the adhesion layer 111. Therefore, in the present disclosure, as an example, the base metal layer 130 is integrally formed on the bottom surface and the side surface of the hole 123 formed in the first metal layer 121.

The base metal layer 130 includes a step of forming a first base metal layer 131 containing a metal selected from titanium or chromium by sputtering on the surface of the adhesion layer 111 (FIG. 2A) and a first base metal. The surface of the layer 131 is provided with a step (FIG. 2B) of forming a second base metal layer 133 containing a metal selected from the group consisting of copper, gold and nickel by sputtering.

The step of forming the first base metal layer 131 is a step of arranging a metal layer containing a metal selected from titanium or chromium on the surfaces of the adhesion layer 111 and the first metal layer 121 with a film thickness of 100 nm or more and 300 nm or less. Is. By arranging the first base metal layer 131, it is possible to form the second base metal layer 133 containing a metal selected from the group consisting of copper, gold and nickel, and to secure adhesion. can. The second base metal layer 133 is preferably formed with a film thickness of 100 nm or more and 300 nm or less. Note that FIG. 2 shows an example in which the first base metal layer 131 and the second base metal layer 133 are arranged on the first metal layers 121 on both sides of the glass base material 101, respectively. The first metal layer 131 and the second base metal layer 133 may be arranged only on the first metal layer 121 on one surface of the glass base material 101 without being limited to this.

After forming the base metal layer 130, the second metal layer 151 is formed by electrolytic plating. Here, in the present disclosure, the wiring structure is formed by patterning the first metal layer 121, the first base metal layer 131, the second base metal layer 133, and the second metal layer 151. Can be done.

For example, a resist layer 141 having openings having a predetermined pattern (arbitrary wiring shape or electrode shape) is formed on the surface of the base metal layer 130 (FIG. 3A). A known material and forming method can be applied to the resist layer 141, and for example, a method of forming a pattern by lithography using a dry film resist can be applied. Therefore, detailed description thereof will be omitted.

A metal material is precipitated by electrolytic plating in the openings of the resist layer 141 arranged on the surface of the first metal layer 121 via the base metal layer 130 to form the second metal layer 151 (FIG. 3 (b)). ). The second metal layer 151 contains a metal selected from the group consisting of copper, gold and nickel. As a method for forming the second metal layer 151 using a plating solution containing these metals, known electrolytic plating can be used, and therefore detailed description thereof will be omitted. In this way, the plating method for the glass substrate according to the present disclosure can be implemented. In the present disclosure, the electrolytic plating solution forming the second metal layer 151 is in close contact with the bottom surface and the side surface of the hole 123 formed in the first metal layer 121 by integrally forming the base metal layer 130. It is possible to prevent contact with the layer 111 and improve the adhesion of the metal layer.

The wiring structure 100 according to the embodiment of the present disclosure formed in this way is arranged in contact with the glass base material 101, the adhesion layer 111 disposed on the surface of the glass base material 101, and the adhesion layer 111. A base metal layer arranged in contact with the formed first metal layer 121 and the first metal layer 121, and arranged in contact with the bottom surface and side surfaces of holes existing on the surface of the first metal layer 121. A 130 and a second metal layer 151 arranged in contact with the base metal layer 130 are provided.

Next, a method of manufacturing the wiring structure according to the embodiment of the present disclosure will be described with reference to FIG. The resist layer 141 is removed to expose the underlying metal layer 130 (FIG. 4 (a)). The exposed base metal layer 130 and the first metal layer 121 to which the second metal layer 151 is not formed are removed (FIG. 4b). As a method for removing the exposed base metal layer 130 and the first metal layer 121, known seed etching can be applied, and thus detailed description thereof will be omitted. At this time, the catalyst layer 113 and the adhesion layer 111 are also removed by seed etching. In this way, the metal laminate 150 in which the adhesion layer 111, the catalyst layer 113, the first metal layer 121, the base metal layer 130, and the second metal layer 151 are sequentially laminated is formed, and the adjacent metal laminate is formed. A wiring structure 100 is formed in which 150 are electrically isolated. It is also possible to form an electrode pad on the metal laminate 150.

In the above-mentioned example, the method of integrally forming the base metal layer 130 on the bottom surface and the side surface of the hole 123 formed in the first metal layer 121 has been described, but the base metal layer is formed on the surface of the adhesion layer. An example of improving the adhesion of the metal layer by forming it on the entire surface will be described below.

5 to 7 are schematic views illustrating an embodiment of the plating method for the glass substrate of the present disclosure. Further, FIG. 8 is a schematic view illustrating an embodiment of a method for manufacturing a wiring structure using the method for plating a glass substrate of the present disclosure. In the plating method for the glass base material of the present disclosure, up to the step of preparing the glass base material 101 (FIG. 5 (a)) and forming the adhesion layer 111 on the surface of the glass base material 101 (FIG. 5 (b)). , Since it is the same as the above-described embodiment, detailed description thereof will be omitted.

The base metal layer 220 is formed on the entire surface of the adhesion layer 111. The base metal layer 220 includes a step of forming a first base metal layer 221 containing a metal selected from titanium or chromium by sputtering on the surface of the adhesion layer 111 (FIG. 5 (c)), and a first base metal. The surface of the layer 221 is provided with a step (FIG. 5 (d)) of forming a second base metal layer 223 containing a metal selected from the group consisting of copper, gold and nickel by sputtering.

By arranging the first base metal layer 221, a second base metal layer 223 containing a metal selected from the group consisting of copper, gold and nickel can be formed, and adhesion can be ensured. can. The film thickness of the first base metal layer 221 and the second base metal layer 223 is preferably 100 nm or more and 300 nm or less. FIG. 5 shows an example in which the first base metal layer 221 and the second base metal layer 223 are arranged on the adhesion layers 111 on both sides of the glass base material 101, but the present disclosure is limited thereto. Instead, the first base metal layer 221 and the second base metal layer 223 may be arranged only on the adhesion layer 111 on one surface of the glass base material 101.

The steps of forming the metal layer include a step of forming the first metal layer 231 on the adhesion layer 111 by electroless plating and a step of forming a second metal layer 251 on the surface of the first metal layer 231 by electroplating. It is equipped with a process. In the present disclosure, the holes 233 formed in the first metal layer 231 are filled with the second metal layer 251.

In order to form the first metal layer 231 on the adhesion layer 111 by electroless plating, the catalyst layer 225 is formed on the adhesion layer 111 (FIG. 6A). Since the catalyst layer 225 is the same as the configuration and formation method of the catalyst layer 113, detailed description thereof will be omitted. When the catalyst for forming the first metal layer 231 is the same metal type as the second base metal layer 223, the catalyst layer 225 may be omitted.

A first metal layer 231 is formed on the adhesion layer 111 by electroless plating via the catalyst layer 225. Since the first metal layer 231 is deposited on the second base metal layer 223, even if holes (pinholes) 233 are formed in the first metal layer 231 formed by electroless plating, the holes 233 are the adhesion layer 111. (Fig. 6 (b)). Since the configuration and formation method of the first metal layer 231 is the same as the configuration and formation method of the first metal layer 121 described above, detailed description thereof will be omitted.

After forming the first metal layer 231, the second metal layer 251 is formed by electroplating. Here, in the present disclosure, the wiring structure is formed by patterning the first base metal layer 221 and the second base metal layer 223, the first metal layer 231 and the second metal layer 251. Can be done.

For example, a resist layer 241 having an opening of a predetermined pattern (arbitrary wiring shape or electrode shape) is formed on the surface of the first metal layer 231 (FIG. 6 (c)). A known material and forming method can be applied to the resist layer 241. For example, a method of forming a pattern by lithography using a dry film resist can be applied. Therefore, detailed description thereof will be omitted.

A metal material is deposited by electroplating in the openings of the resist layer 241 arranged on the surface of the first metal layer 231 to form the second metal layer 251 (FIG. 7). Since the configuration and formation method of the second metal layer 251 are the same as the configuration and formation method of the second metal layer 151 described above, detailed description thereof will be omitted. In this way, the plating method for the glass substrate according to the present disclosure can be implemented. In the present disclosure, by forming the base metal layer 220 on the entire surface of the adhesion layer 111, the base metal layer 220 is located on the bottom surface of the holes 233 formed in the first metal layer 231. It is possible to prevent the electrolytic plating solution forming the second metal layer 251 from coming into contact with the adhesion layer 111, and it is possible to improve the adhesion of the metal layer.

Next, a method of manufacturing the wiring structure according to the embodiment of the present disclosure will be described with reference to FIG. The resist layer 241 is removed to expose the first metal layer 231 (FIG. 8 (a)). The exposed first metal layer 231 and the base metal layer 220 to which the second metal layer 251 is not formed are removed (FIG. 8b). As a method for removing the exposed first metal layer 231 and the underlying metal layer 220, known seed etching can be applied, and thus detailed description thereof will be omitted. At this time, the adhesion layer 111 is also removed by seed etching. In this way, the metal laminate 250 in which the adhesion layer 111, the base metal layer 220, the first metal layer 231 and the second metal layer 251 are sequentially laminated is formed, and the space between the adjacent metal laminates 250 is formed. An electrically isolated wiring structure 200 is formed. It is also possible to form an electrode pad on the metal laminate 250.

The wiring structure 200 according to the embodiment of the present disclosure formed in this way is arranged in contact with the glass base material 101, the adhesion layer 111 disposed on the surface of the glass base material 101, and the adhesion layer 111. The base metal layer 220 is provided, a first metal layer 231 arranged in contact with the base metal layer 220, and a second metal layer 251 arranged in contact with the first metal layer 231. ..

In particular, the second metal layer 251 is arranged in contact with the first metal layer 231 and is arranged in contact with the bottom surface and the side surface of the hole 233 existing on the surface of the first metal layer 231.

(Manufacturing method of glass interposer)
A method for manufacturing a glass interposer using the above-mentioned plating method for a glass substrate will be described. 9 to 12 are schematic views illustrating an embodiment of the manufacturing method of the glass interposer 300 of the present disclosure.

The method for manufacturing the glass interposer of the present disclosure includes a step of preparing a glass base material having through holes having openings in the first surface and the second surface, and a first surface and a second surface of the glass base material. It includes a step of forming an adhesion layer on the surface and the surface of the through hole, a step of forming a metal layer on the adhesion layer by plating, and a step of forming a base metal layer on at least a part of the surface of the adhesion layer. ..

A glass base material having through holes 303 having openings in the first surface and the second surface is prepared (FIG. 9 (a)). Since the above-mentioned glass base material 101 can be used as the glass base material 301, detailed description thereof will be omitted. The diameter of the through hole provided in the glass base material 301 is preferably 10 μm or more and 100 μm or less.

An adhesion layer 311 is formed on the surface of the glass base material 301 and the surface of the through hole 303 (FIG. 9 (b)). The adhesion layer 311 can be formed, for example, by forming zinc oxide on the surface of the glass base material 301 and the surface of the through hole 303. Since the adhesion layer 311 can be formed by using the same materials and forming steps as the adhesion layer 111, detailed description thereof will be omitted.

In FIG. 9B, an example in which the adhesion layer 311 is formed on both surfaces of the opposite surfaces of the glass base material 301 is shown, but the present disclosure is not limited to this. The adhesion layer 311 may be formed on only one side of the glass base material 301 by the coating method, or the adhesion layer 311 may be formed on both sides of the glass base material 301 by the dip coating method or electroless plating. The adhesion layer 311 may be removed from one side. When the adhesion layer 311 is formed by the dip coating method or electroless plating, the adhesion layer 311 is also formed on the wall surface of the through hole 303.

A catalyst layer 313 is formed on the surface of the adhesion layer 311 in order to arrange the metal layer on the surface of the adhesion layer 311 (FIG. 9 (c)). Since the catalyst layer 313 can be formed by using the same materials and forming steps as the catalyst layer 113 described above, detailed description thereof will be omitted. When the adhesion layer 311 is also formed on the wall surface of the through hole 303, the catalyst layer 313 is also formed on the adhesion layer 311 arranged on the wall surface of the through hole 303.

The steps of forming the metal layer include a step of forming the first metal layer 321 on the adhesion layer 311 by electroless plating and a step of forming a second metal layer 351 on the surface of the first metal layer 321 by electroplating. It is equipped with a process. Here, the base metal layer 330 is integrally formed on the bottom surface and the side surface of the hole 323 formed in the first metal layer 321, and the hole 323 is filled with the second metal layer 351.

The first metal layer 321 is formed on the adhesion layer 311 by electroless plating via the catalyst layer 313. Since the same material and forming step as the first metal layer 121 can be used for the first metal layer 321, detailed description thereof will be omitted. When the catalyst layer 313 is also formed on the wall surface of the through hole 303, the first metal layer 321 is also formed on the wall surface of the through hole 303. Here, holes (pinholes) 323 frequently occur in the first metal layer 321 formed by electroless plating (FIG. 9 (d)). When electrolytic plating is performed in the state where the holes 323 are present in the first metal layer 321, the metal layer is peeled off as described above.

In the present disclosure, the problem that the metal layer is peeled off is solved by preventing the electrolytic plating solution from coming into contact with the adhesion layer 311. Therefore, in the present disclosure, as an example, the base metal layer 330 is integrally formed on the bottom surface and the side surface of the hole 323 formed in the first metal layer 321.

The base metal layer 330 includes a step of forming a first base metal layer 331 containing a metal selected from titanium or chromium by sputtering on the surface of the first metal layer 321 (FIG. 10A) and a first step. A second base metal layer 333 containing a metal selected from the group consisting of copper, gold and nickel is formed on the surface of the base metal layer 331 by sputtering (FIG. 10B).

Since the step of forming the first base metal layer 331 and the second base metal layer 333 can use the same step as the step of forming the first base metal layer 131 and the second base metal layer 133. , Detailed description will be omitted. In the present disclosure, the first base metal layer 331 and the second base metal layer 333 may also be formed on the inner surface of the through hole 303. Note that FIG. 10 shows an example in which the first base metal layer 331 and the second base metal layer 333 are arranged on the first metal layers 321 on both sides of the glass base material 301, respectively. The first metal layer 331 and the second base metal layer 333 may be arranged only on the first metal layer 321 on one surface of the glass base material 301 without being limited to this.

Here, since the first base metal layer 331 and the second base metal layer 333 are formed by sputtering, when the aspect ratio of the through hole 303 is large, the first base metal layer 331 and the second base metal layer 333 are formed on the inner surface near the central portion of the through hole 303 in the through direction. The amount of the first base metal layer 331 and the second base metal layer 333 deposited is small, and the first metal layer 321 may be exposed. Therefore, the thickness of the second metal layer 351 formed by electrolytic plating may be thin on the inner surface near the central portion in the penetrating direction of the through hole 303, but in the glass interposer 300, the conductivity in the through hole 303 is reduced. The property is ensured by the first metal layer 321.

After forming the base metal layer 330, the second metal layer 351 is formed by electrolytic plating. Here, in the present disclosure, the wiring structure is formed by patterning the first metal layer 321 and the first base metal layer 331, the second base metal layer 333, and the second metal layer 351. Can be done.

For example, a resist layer 341 having openings having a predetermined pattern (arbitrary wiring shape or electrode shape) is formed on the surface of the base metal layer 330 (FIG. 10 (C)). Since known materials and forming methods can be applied to the resist layer 341, and for example, a method of pattern forming by lithography using a dry film resist can be applied, detailed description thereof will be omitted.

A metal material is deposited by electrolytic plating in the openings of the resist layer 341 arranged on the surface of the first metal layer 321 via the base metal layer 330 to form the second metal layer 351 (FIG. 11). Since the second metal layer 351 can use the same material and forming process as the second metal layer 151, detailed description thereof will be omitted. A second metal layer 351 is also formed on the base metal layer 330 arranged on the wall surface of the through hole 303. In the present disclosure, the electrolytic plating solution forming the second metal layer 351 is in close contact with the bottom surface and the side surface of the hole 323 formed in the first metal layer 321 by integrally forming the base metal layer 330. It is possible to prevent contact with the layer 311 and improve the adhesion of the metal layer.

Next, the resist layer 341 is removed to expose the base metal layer 330 (FIG. 12 (a)). The exposed base metal layer 330 and the first metal layer 321 from which the second metal layer 351 is not formed are removed (FIG. 12 (b)). As a method for removing the exposed base metal layer 330 and the first metal layer 321, known seed etching can be applied, and thus detailed description thereof will be omitted. At this time, the catalyst layer 313 and the adhesion layer 311 are also removed by seed etching. In this way, a metal laminate 350 in which the adhesion layer 311, the catalyst layer 313, the first metal layer 321 and the base metal layer 330 and the second metal layer 351 are sequentially laminated is formed, and the adjacent metal laminate is formed. A glass interposer 300 is formed in which 350 are electrically isolated. It is also possible to form an electrode pad on the metal layer.

The glass interposer 300 according to the embodiment of the present disclosure thus formed is a glass base material 301 having through holes 303 having openings in the first surface and the second surface, and the glass base material 301. An adhesion layer 311 arranged in contact with the first surface and the second surface and the surface of the through hole 303, a first metal layer 321 arranged on the surface of the adhesion layer 311 and a first metal. The base metal layer 330, which is arranged in contact with the layer 321 and is arranged in contact with the bottom surface and the side surface of the hole 323 existing on the surface of the first metal layer 321 and the base metal layer 330, is arranged in contact with the base metal layer 330. A second metal layer 351 is provided.

In the above-mentioned example, the method of integrally forming the base metal layer 330 on the bottom surface and the side surface of the hole 323 formed in the first metal layer 321 has been described, but the base metal layer is formed on the surface of the adhesion layer. An example of improving the adhesion of the metal layer by forming it on the entire surface will be described below.

Hereinafter, a method for manufacturing a glass interposer using a method of plating a glass base material having a step of forming the above-mentioned base metal layer on the entire surface of the adhesive layer will be described. 13 to 16 are schematic views illustrating an embodiment of a method for manufacturing the glass interposer 400 of the present disclosure.

In the method of plating the glass substrate of the present disclosure, a glass substrate 301 having through holes 303 having openings on the first surface and the second surface is prepared (FIG. 13 (a)), and the glass substrate is prepared. Since the steps up to the step of forming the adhesion layer 311 on the first surface and the second surface of 301 and the surface of the through hole (FIG. 13B) are the same as those in the above-described embodiment, detailed description thereof will be omitted. do.

The base metal layer 420 is formed on the entire surface of the adhesion layer 311. The base metal layer 420 includes a step of forming a first base metal layer 421 containing a metal selected from titanium or chromium by sputtering on the surface of the adhesion layer 311 (FIG. 13 (c)), and a first base metal. The surface of the layer 421 is provided with a step (FIG. 13 (d)) of forming a second base metal layer 423 containing a metal selected from the group consisting of copper, gold and nickel by sputtering.

Since the step of forming the first base metal layer 421 and the second base metal layer 423 can use the same step as the step of forming the first base metal layer 221 and the second base metal layer 223. , Detailed description will be omitted. In the present disclosure, the first base metal layer 421 and the second base metal layer 423 may also be formed on the inner surface of the through hole 403. Note that FIG. 13 shows an example in which the first base metal layer 421 and the second base metal layer 423 are arranged on the adhesion layers 311 on both sides of the glass base material 301, respectively, but the present disclosure is limited to this. The first base metal layer 421 and the second base metal layer 423 may be arranged only on the adhesion layer 311 on one surface of the glass base material 301.

The steps of forming the metal layer include a step of forming the first metal layer 431 by electroless plating on the adhesion layer 311 via the second base metal layer 423 and an electrolytic plating on the surface of the first metal layer 431. The step of forming the second metal layer 451 is provided. In the present disclosure, the holes 433 formed in the first metal layer 431 are filled with the second metal layer 451.

Here, since the first base metal layer 421 and the second base metal layer 423 are formed by sputtering, when the aspect ratio of the through hole 303 is large, the first base metal layer 421 and the second base metal layer 423 are formed on the inner surface near the central portion of the through hole 303 in the through direction. The amount of the first base metal layer 421 and the second base metal layer 423 deposited is small, and the adhesion layer 311 may be exposed. Therefore, in order to form the first metal layer 431 by electroless plating, it is preferable to form the catalyst layer 425 on the surface of the first base metal layer 421 and the surface of the exposed adhesion layer 311. Since the catalyst layer 425 is the same as the configuration and formation method of the catalyst layer 113, detailed description thereof will be omitted. Further, when the aspect ratio of the through hole 303 is small, the catalyst layer 425 may be omitted.

The first metal layer 431 is formed on the second base metal layer 423 by electroless plating via the catalyst layer 425. Since the base metal layer 420 is also arranged on the wall surface of the through hole 303, the first metal layer 431 is also formed on the wall surface of the through hole 303. Since the first metal layer 431 is deposited on the second base metal layer 423, even if holes (pinholes) 433 are formed in the first metal layer 431 formed by electroless plating, the holes 433 are the adhesion layer 311. (Fig. 14 (a)). Since the configuration and formation method of the first metal layer 431 is the same as the configuration and formation method of the first metal layer 121 described above, detailed description thereof will be omitted.

After forming the first metal layer 431, the second metal layer 451 is formed by electroplating. Here, in the present disclosure, the wiring structure is formed by patterning the first base metal layer 421, the second base metal layer 423, the first metal layer 431, and the second metal layer 451. Can be done.

For example, a resist layer 441 having an opening of a predetermined pattern (arbitrary wiring shape or electrode shape) is formed on the surface of the first metal layer 431 (FIG. 14 (b)). A known material and forming method can be applied to the resist layer 441, and for example, a method of forming a pattern by lithography using a dry film resist can be applied. Therefore, detailed description thereof will be omitted.

A metal material is deposited by electroplating in the openings of the resist layer 441 arranged on the surface of the first metal layer 431 to form the second metal layer 451 (FIG. 15). Since the configuration and formation method of the second metal layer 451 are the same as the configuration and formation method of the second metal layer 151 described above, detailed description thereof will be omitted. A second metal layer 451 is also formed on the first metal layer 431 arranged on the wall surface of the through hole 303. In the present disclosure, by forming the base metal layer 420 on the entire surface of the adhesion layer 311, the base metal layer 420 is located on the bottom surface of the holes 433 formed in the first metal layer 431. It is possible to prevent the electrolytic plating solution forming the second metal layer 451 from coming into contact with the adhesion layer 311 and improve the adhesion of the metal layer.

Next, the resist layer 441 is removed to expose the first metal layer 431 (FIG. 16A). The exposed first metal layer 431 and the base metal layer 420 to which the second metal layer 451 is not formed are removed (FIG. 16 (b)). As a method for removing the exposed first metal layer 431 and the underlying metal layer 420, known seed etching can be applied, and thus detailed description thereof will be omitted. At this time, the adhesion layer 311 is also removed by seed etching. In this way, the metal laminate 450 in which the adhesion layer 311 and the base metal layer 420, the first metal layer 431, and the second metal layer 451 are sequentially laminated is formed, and the space between the adjacent metal laminates 450 is formed. An electrically isolated glass interposer 400 is formed. It is also possible to form an electrode pad on the metal layer.

The glass interposer 400 according to the embodiment of the present disclosure thus formed is a glass base material 301 having through holes 303 having openings in the first surface and the second surface, and the glass base material 301. The contact layer 311 arranged in contact with the first surface and the second surface and the surface of the through hole 303, the base metal layer 420 arranged in contact with the surface of the contact layer 311, and the base metal layer 420. A first metal layer 431 arranged in contact with the first metal layer 431 and a second metal layer 451 arranged in contact with the first metal layer 431 are provided.

In particular, the second metal layer 451 is arranged in contact with the first metal layer 431 and is arranged in contact with the bottom surface and the side surface of the hole 433 existing on the surface of the first metal layer 431.

Based on the above, according to one embodiment of the present disclosure, a step of preparing a glass base material having through holes having openings in the first surface and the second surface, and the first surface of the glass base material. A step of forming an adhesion layer between the second surface and the surface of the through hole, a step of forming a metal layer by plating on the adhesion layer, and a base metal layer on at least a part of the surface of the adhesion layer. A process of forming a glass interposer and a method for manufacturing a glass interposer can be provided.

The base metal layer may be integrally formed on the surface of the adhesion layer and the surface of the metal layer.

The steps of forming the metal layer include a step of forming a first metal layer on the close contact layer by electroless plating, and a step of forming the base metal on the bottom surface and side surfaces of holes formed in the first metal layer. A step of integrally forming the layer and a step of forming a second metal layer by electrolytic plating on the surface of the base metal layer may be provided, and the holes may be filled with the second metal layer.

A step of forming a resist layer having an opening of a predetermined pattern on the surface of the base metal layer is further provided, and a second metal layer may be formed at the opening on the surface of the first metal layer by electrolytic plating. good.

The base metal layer may be formed on the entire surface of the adhesion layer.

The steps of forming the metal layer include a step of forming a first metal layer on the adhesion layer by electroplating and a step of forming a second metal layer on the surface of the first metal layer by electroplating. And, the holes formed in the first metal layer may be filled with the second metal layer.

A step of forming a resist layer having an opening of a predetermined pattern on the surface of the first metal layer is further provided, and a second metal layer is formed in the opening on the surface of the first metal layer by electrolytic plating. You may.

The base metal layer is formed by a step of forming a first base metal layer containing a metal selected from titanium or chromium by sputtering on the surface of the adhesion layer, and by sputtering on the surface of the first base metal layer. It may be provided with a step of forming a second base metal layer containing a metal selected from the group consisting of copper, gold and nickel.

(Semiconductor device)
A semiconductor device using the glass interposer manufactured by the method for manufacturing the glass interposer described above will be described.

FIG. 19 is a schematic view showing a semiconductor device using the glass interposer of the present disclosure. The semiconductor device 1000 is connected to an LSI substrate 1400 in which three glass interposers 1310, 1320, and 1330 are laminated and, for example, a semiconductor element such as a DRAM is formed. The glass interposer 1310 has connection terminals 1511 and 1512 formed of first wiring, second wiring and the like. These glass interposers 1310, 1320, and 1330 may be glass interposers formed from substrates of different materials. The connection terminal 1512 is connected to the connection terminal 1500 of the LSI board 1400 by a bump 1610. The connection terminal 1511 is connected to the connection terminal 1522 of the glass interposer 1320 by a bump 1620. The connection terminals 1521 of the glass interposer 1320 and the connection terminal 1532 of the glass interposer 1330 are also connected by bumps 1630. For the bumps 1610, 1620, 1630, for example, a metal such as indium, copper, or gold is used.

When laminating glass interposers, the number of layers is not limited to three, but may be two or four or more. Further, in the connection between the glass interposer and another substrate, not only the one using bumps but also other bonding techniques such as eutectic bonding may be used. Further, a polyimide, an epoxy resin or the like may be applied and fired to bond the glass interposer to another substrate.

FIG. 20 is a diagram showing another example of the semiconductor device. In the semiconductor device 1000 shown in FIG. 20, semiconductor chips (LSI chips) 1410 and 1420 such as a MEMS device, a CPU, and a memory, and a glass interposer 1300 are laminated and connected to an LSI substrate 1400.

A glass interposer 1300 is arranged between the semiconductor chip 1410 and the semiconductor chip 1420, and is connected by bumps 1640 and 1650. A semiconductor chip 1410 is placed on the LSI substrate 1400, and the LSI substrate 1400 and the semiconductor chip 1420 are connected by a wire 1700. In this example, the glass interposer 1300 is used as an interposer for laminating a plurality of semiconductor chips and mounting them three-dimensionally, and by laminating a plurality of semiconductor chips having different functions, a multifunctional semiconductor device is manufactured. be able to. For example, by using the semiconductor chip 1410 as a 3-axis acceleration sensor and the semiconductor chip 1420 as a 2-axis magnetic sensor, it is possible to manufacture a semiconductor device in which a 5-axis motion sensor is realized by one module.

When the semiconductor chip is a sensor formed by a MEMS device or the like, the sensing result may be output as an analog signal. In this case, the low-pass filter, amplifier, and the like may also be formed on the semiconductor chip or the glass interposer 1300.

FIG. 21 is a diagram showing another example of the semiconductor device. The above two examples (FIGS. 19 and 20) were three-dimensional implementations, but in this example, they are applied to a combined implementation of two dimensions and three dimensions (sometimes referred to as 2.5 dimensions). .. In the example shown in FIG. 21, six glass interposers 1310, 1320, 1330, 1340, 1350, and 1360 are laminated and connected to the LSI substrate 1400. However, not only all the glass interposers are arranged in a laminated manner, but also they are arranged side by side in the in-plane direction of the substrate. Each of these glass interposers may be a glass interposer formed of a substrate made of a different material.

In the example of FIG. 21, the glass interposers 1310 and 1350 are connected on the LSI substrate 1400, the glass interposers 1320 and 1340 are connected on the glass interposer 1310, the glass interposer 1330 is connected on the glass interposer 1320, and the glass interposer 1350 is on the glass interposer 1350. A glass interposer 1360 is connected to the.

The semiconductor device 1000 manufactured as described above includes various devices such as mobile terminals (mobile phones, smartphones, notebook personal computers, etc.), information processing devices (desktop personal computers, servers, car navigation systems, etc.), home appliances, and the like. It is installed in electrical equipment.

The present disclosure is not limited to the above-described embodiment, and can be appropriately modified without departing from the spirit.

100 Wiring structure, 101 Glass substrate, 111 Adhesion layer, 113 Catalyst layer, 121 First metal layer, 123 holes, 130 Underlayer metal layer, 131 First underlayer metal layer, 133 Second underlayer metal layer, 141 Resist layer, 151 second metal layer, 200 wiring structure, 220 base metal layer, 221 first base metal layer, 223 second base metal layer, 225 catalyst layer, 231 first metal layer, 233 holes, 241 resist layer, 251 second metal layer, 300 glass interposer, 301 glass base material, 303 through hole, 311 adhesion layer, 313 catalyst layer, 321 first metal layer, 323 hole, 330 base metal layer, 331 first Base metal layer, 333 second base metal layer, 341 resist layer, 351 second metal layer, 400 glass interposer, 403 through hole, 420 base metal layer, 421 first base metal layer, 423 second base Metal layer, 425 catalyst layer, 431 first metal layer, 433 holes, 441 resist layer, 451 second metal layer, 900 devices, 901 glass substrate, 911 adhesion layer, 913 catalyst layer, 921 first metal layer , 923 pinhole, 925 peeling part, 941 second metal layer, 1000 semiconductor device, 1300 glass interposer, 1310 glass interposer, 1320 glass interposer, 1330 glass interposer, 1340 glass interposer, 1350 glass interposer, 1360 glass interposer, 1400 substrate. , 1410 Semiconductor Chip, 1410 Semiconductor Chip (LSI Chip), 1420 Semiconductor Chip, 1420 Semiconductor Chip (LSI Chip), 1500 Connection Terminal, 1511 Connection Terminal, 1512 Connection Terminal, 1521 Connection Terminal, 1522 Connection Terminal, 1532 Connection Terminal, 1610 Bump, 1620 bump, 1630 bump, 1640 bump, 1650 bump, 1700 wire

Claims (12)

The process of forming an adhesive layer on the surface of the glass substrate and
A step of forming a first metal layer on the adhesion layer by electroless plating, and
A first metal selected from titanium or chromium is contained in the surface of the adhesion layer which is the bottom surface of the hole formed in the first metal layer, the side surface of the hole, and the surface of the first metal layer by sputtering. The process of integrally forming the base metal layer of 1 and
A step of forming a second base metal layer containing a metal selected from the group consisting of copper, gold and nickel by sputtering on the surface of the first base metal layer.
A method for plating a glass base material , comprising a step of forming a second metal layer by electrolytic plating on the surface of the second base metal layer and filling the holes with the second metal layer. The first base metal layer is formed with a film thickness of 100 nm or more and 300 nm or less.
The method for plating a glass substrate according to claim 1, wherein the second base metal layer is formed with a film thickness of 100 nm or more and 300 nm or less. The process of forming an adhesive layer on the surface of the glass substrate and
By sputtering on the entire surface of the adhesion layer, forming a first underlying metal layer comprising a metal selected from titanium or chromium,
A step of forming a second base metal layer containing a metal selected from the group consisting of copper, gold and nickel by sputtering on the surface of the first base metal layer.
A step of forming a first metal layer on the second base metal layer by electroless plating, and
A step of forming a second metal layer by electrolytic plating on the surface of the first metal layer is provided.
A method for plating a glass substrate in which holes formed in the first metal layer are filled with the second metal layer. The first base metal layer is formed with a film thickness of 100 nm or more and 300 nm or less.
The method for plating a glass substrate according to claim 3, wherein the second base metal layer is formed with a film thickness of 100 nm or more and 300 nm or less. With a glass substrate
With the adhesion layer disposed on the surface of the glass substrate,
A first metal layer arranged in contact with the adhesion layer and selected from the group consisting of copper, gold and nickel.
And a surface of said first metal layer, the first present on the surface of the metal layer in contact with the bottom and side surfaces of the holes are disposed integrally, the first containing a metal selected from titanium or chromium Underlayer metal layer and
A second base metal layer disposed on the surface of the first base metal layer and containing a metal selected from the group consisting of copper, gold and nickel, and a second base metal layer.
A second metal layer arranged in contact with the second base metal layer and selected from the group consisting of copper, gold and nickel .
Wiring structure. The first base metal layer has a film thickness of 100 nm or more and 300 nm or less.
The wiring structure according to claim 5, wherein the second base metal layer has a film thickness of 100 nm or more and 300 nm or less. With a glass substrate
With the adhesion layer disposed on the surface of the glass substrate,
A first base metal layer disposed in contact with the adhesion layer and containing a metal selected from titanium or chrome.
A second base metal layer disposed on the surface of the first base metal layer and containing a metal selected from the group consisting of copper, gold and nickel, and a second base metal layer.
A first metal layer arranged in contact with the second base metal layer and selected from the group consisting of copper, gold and nickel .
A second metal selected from the group consisting of copper, gold and nickel, which is integrally disposed in contact with the first metal layer and the bottom surface and side surfaces of holes existing on the surface of the first metal layer. Layer and
Wiring structure. The first base metal layer has a film thickness of 100 nm or more and 300 nm or less.
The wiring structure according to claim 7, wherein the second base metal layer has a film thickness of 100 nm or more and 300 nm or less. A glass substrate having through holes having openings on the first surface and the second surface,
An adhesion layer disposed in contact with the first surface and the second surface of the glass substrate and the surface of the through hole.
A first metal layer disposed on the surface of the adhesion layer and selected from the group consisting of copper, gold and nickel, and
And a surface of said first metal layer, the first present on the surface of the metal layer in contact with the bottom and side surfaces of the holes are disposed integrally, the first containing a metal selected from titanium or chromium Underlayer metal layer and
A second base metal layer disposed on the surface of the first base metal layer and containing a metal selected from the group consisting of copper, gold and nickel, and a second base metal layer.
A second metal layer arranged in contact with the second base metal layer and selected from the group consisting of copper, gold and nickel .
A glass interposer equipped with. The first base metal layer has a film thickness of 100 nm or more and 300 nm or less.
The glass interposer according to claim 9, wherein the second base metal layer has a film thickness of 100 nm or more and 300 nm or less. A glass substrate having through holes having openings on the first surface and the second surface,
An adhesion layer disposed in contact with the first surface and the second surface of the glass substrate and the surface of the through hole.
A first base metal layer containing a metal selected from titanium or chrome, which is arranged in contact with the surface of the adhesion layer, and
A second base metal layer disposed on the surface of the first base metal layer and containing a metal selected from the group consisting of copper, gold and nickel, and a second base metal layer.
A first metal layer arranged in contact with the second base metal layer and selected from the group consisting of copper, gold and nickel .
A second metal selected from the group consisting of copper, gold and nickel, which is integrally disposed in contact with the first metal layer and the bottom surface and side surfaces of holes existing on the surface of the first metal layer. Layer and
A glass interposer equipped with. The first base metal layer has a film thickness of 100 nm or more and 300 nm or less.
The glass interposer according to claim 11, wherein the second base metal layer has a film thickness of 100 nm or more and 300 nm or less.

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