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JP6965110B2 - Inspection equipment and inspection method - Google Patents
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JP6965110B2 - Inspection equipment and inspection method - Google Patents

Inspection equipment and inspection method Download PDF

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JP6965110B2
JP6965110B2 JP2017216357A JP2017216357A JP6965110B2 JP 6965110 B2 JP6965110 B2 JP 6965110B2 JP 2017216357 A JP2017216357 A JP 2017216357A JP 2017216357 A JP2017216357 A JP 2017216357A JP 6965110 B2 JP6965110 B2 JP 6965110B2
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和浩 伴
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Hioki EE Corp
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本発明は、互いに接続される複数の導体同士の接続状態を検査する検査装置および検査方法に関するものである。 The present invention relates to an inspection device and an inspection method for inspecting a connection state between a plurality of conductors connected to each other.

この種の検査装置として、下記特許文献1において出願人が開示した回路基板検査装置が知られている。この回路基板検査装置は、測定部、記憶部および制御部を備えて構成され、測定部が、回路基板に形成されている配線パターンおよび配線パターン同士を接続するビア(以下、配線パターンおよびビアを「導体」ともいう)の抵抗値を測定し、制御部が、測定部によって測定された抵抗値と記憶部に記憶されている良否判定用基準値とを比較して導体の導通状態を検査する。この場合、良否判定用基準値は、良品の回路基板における導体の抵抗値の実測値や、設計データ等を用いて特定した導体の抵抗値に、許容値を加えて導体毎に設定される。 As an inspection device of this type, a circuit board inspection device disclosed by the applicant in Patent Document 1 below is known. This circuit board inspection device is configured to include a measuring unit, a storage unit, and a control unit, and the measuring unit includes wiring patterns formed on the circuit board and vias connecting the wiring patterns (hereinafter, wiring patterns and vias). The resistance value of the conductor) is measured, and the control unit inspects the continuity state of the conductor by comparing the resistance value measured by the measuring unit with the quality judgment reference value stored in the storage unit. .. In this case, the reference value for quality determination is set for each conductor by adding an allowable value to the measured resistance value of the conductor in a non-defective circuit board or the resistance value of the conductor specified by using design data or the like.

特開2009−288115号公報(第5−7頁、第1−2図)Japanese Unexamined Patent Publication No. 2009-288115 (Page 5-7, Fig. 1-2)

ところが、上記の回路基板検査装置には、改善すべき以下の課題がある。具体的には、この回路基板検査装置では、良品の回路基板における導体の抵抗値の実測値や設計データ等を用いて特定した導体の抵抗値に許容値を加えて導体毎に設定した良否判定用基準値を用いて検査を行っている。このため、数多くの導体が形成された回路基板をこの回路基板検査装置を用いて検査する際には、良否判定用基準値を設定するために、多くの労力と時間を要することとなる。また、良否判定用基準値を設定する際に抵抗値に加える許容値も、経験値に基づいて規定されるため、正確な検査が可能な良否判定用基準値を設定するためには、熟練が必要となる。したがって、この回路基板検査装置では、良否判定用基準値を効率的に設定することが困難なことに起因して、検査効率の向上が困難となっている。 However, the circuit board inspection device described above has the following problems to be improved. Specifically, in this circuit board inspection device, a passability judgment is set for each conductor by adding an allowable value to the resistance value of the conductor specified by using the measured value of the resistance value of the conductor in a non-defective circuit board or design data. Inspection is performed using the standard value. Therefore, when inspecting a circuit board on which a large number of conductors are formed by using this circuit board inspection device, it takes a lot of labor and time to set a reference value for quality determination. In addition, since the permissible value to be added to the resistance value when setting the pass / fail judgment reference value is also determined based on the experience value, skill is required to set the pass / fail judgment reference value that enables accurate inspection. You will need it. Therefore, in this circuit board inspection device, it is difficult to improve the inspection efficiency because it is difficult to efficiently set the quality determination reference value.

また、導体同士の接続が不十分なときには、検査の際に供給する検査用信号の電流値の相違によって抵抗値が異なることがある。具体的には、このような導体では、電流値が大きい検査用信号を供給して測定した抵抗値が、電流値が小さい検査用信号を供給して測定した抵抗値よりも小さくなることがある。このような導体は、本来、電流値依存性不良として判定されなければならないが、上記の回路基板検査装置では、電流値依存性不良を判定する手段が設けられていないため、このような不良を正しく判定することが困難となっている。また、この種の基板では、導体同士(配線パターンおよびビア)を接続する際に用いる材料に含まれる成分と配線パターンやビアを構成する金属とによって半導体が形成され、この半導体と金属とによって整流作用を示すショットキー接続が導体同士の接続部分に形成されることがある。このような導体は、検査の際に供給する検査用信号の極性の相違によって抵抗値が異なることとなるため、本来、極性依存性不良として判定されなければならないが、上記の回路基板検査装置では、極性依存性不良を判定する手段が設けられていないため、このような不良を正しく判定することが困難となっている。 Further, when the connection between the conductors is insufficient, the resistance value may differ due to the difference in the current value of the inspection signal supplied at the time of inspection. Specifically, in such a conductor, the resistance value measured by supplying an inspection signal having a large current value may be smaller than the resistance value measured by supplying an inspection signal having a small current value. .. Originally, such a conductor must be determined as a current value-dependent defect, but since the above-mentioned circuit board inspection device is not provided with a means for determining a current value-dependent defect, such a defect is determined. It is difficult to judge correctly. Further, in this type of substrate, a semiconductor is formed by a component contained in a material used for connecting conductors (wiring pattern and via) and a metal constituting the wiring pattern and via, and the semiconductor and the metal rectify the semiconductor. A working shotkey connection may be formed at the connection between conductors. Since such a conductor has a different resistance value due to a difference in the polarity of the inspection signal supplied at the time of inspection, it must be originally determined as a polarity dependence defect, but in the above circuit board inspection apparatus, it must be determined. Since there is no means for determining the polarity dependence defect, it is difficult to correctly determine such a defect.

本発明は、かかる課題に鑑みてなされたものであり、導体の接続状態を効率的にかつ正確に判定し得る検査装置および検査方法を提供することを主目的とする。 The present invention has been made in view of such a problem, and an object of the present invention is to provide an inspection device and an inspection method capable of efficiently and accurately determining a connected state of a conductor.

上記目的を達成すべく請求項1記載の検査装置は、互いに接続される複数の導体に検査用信号が供給されている状態で当該各導体間の抵抗値を測定する測定部と、当該測定部によって測定された前記抵抗値に基づいて前記各導体同士の接続状態を検査する検査部とを備えた検査装置であって、電流値が第1電流値に規定され電圧値の上限値が第1電圧値に規定された前記検査用信号としての第1の検査用信号を第1極性および当該第1極性を反転した第2極性で切り替えて出力すると共に、電流値が前記第1電流値よりも大きい第2電流値に規定され電圧値の上限値が前記第1電圧値よりも大きい第2電圧値に規定された前記検査用信号としての第2の検査用信号を前記第1極性および前記第2極性で切り替えて出力可能な信号出力部と、前記信号出力部を制御する制御部とを備え、前記制御部は、前記信号出力部を制御して、前記第1の検査用信号を前記第1極性および前記第2極性のいずれか一方の極性で出力させて前記各導体に供給させる第1の状態と、前記第1の検査用信号を前記第1極性および前記第2極性の他方の極性で出力させて前記各導体に供給させる第2の状態と、前記第2の検査用信号を前記第1極性および前記第2極性のいずれか一方の極性で出力させて前記各導体に供給させる第3の状態と、前記第2の検査用信号を前記第1極性および前記第2極性の他方の極性で出力させて前記各導体に供給させる第4の状態とを切り替える切替処理を実行し、前記検査部は、前記第1の状態で前記測定部によって測定された前記抵抗値としての第1の抵抗値、前記第2の状態で前記測定部によって測定された前記抵抗値としての第2の抵抗値、前記第3の状態で前記測定部によって測定された前記抵抗値としての第3の抵抗値、および前記第4の状態で前記測定部によって測定された前記抵抗値としての第4の抵抗値の相互の関係が予め決められた条件を満たしかつ当該各抵抗値のすべてが絶縁状態を示す値未満のときに前記各導体同士の接続状態を良好と判定し、前記第1から第4の抵抗値の相互の関係が前記条件を満たさないときおよび当該各抵抗値の1つ以上が前記絶縁状態を示す値以上のときの少なくとも一方のときに前記各導体同士の接続状態を不良と判定する判定処理を実行する。 In order to achieve the above object, the inspection apparatus according to claim 1 includes a measuring unit that measures a resistance value between the conductors in a state where inspection signals are supplied to a plurality of conductors connected to each other, and the measuring unit. An inspection device including an inspection unit that inspects the connection state between the conductors based on the resistance value measured by the first conductor, and the current value is defined as the first current value and the upper limit value of the voltage value is the first. The first inspection signal as the inspection signal defined in the voltage value is switched between the first polarity and the second polarity in which the first polarity is inverted and output, and the current value is higher than the first current value. The second inspection signal as the inspection signal defined by the second voltage value whose upper limit value of the voltage value defined by the large second current value is larger than the first voltage value is the first polarity and the first polarity. A signal output unit capable of switching and outputting with two polarities and a control unit for controlling the signal output unit are provided, and the control unit controls the signal output unit to output the first inspection signal to the first. A first state in which one of the one polarity and the second polarity is output and supplied to the respective conductors, and the other polarity of the first polarity and the second polarity of the first inspection signal. A second state in which the second state is output and supplied to the respective conductors, and a second state in which the second inspection signal is output in one of the first polarity and the second polarity and supplied to the respective conductors. A switching process for switching between the third state and the fourth state in which the second inspection signal is output in the other polarity of the first polarity and the second polarity and supplied to the respective conductors is executed, and the above-mentioned The inspection unit has a first resistance value as the resistance value measured by the measuring unit in the first state, and a second resistance as the resistance value measured by the measuring unit in the second state. A value , a third resistance value as the resistance value measured by the measuring unit in the third state , and a fourth resistance value as the resistance value measured by the measuring unit in the fourth state. When the mutual relationship between the two conductors satisfies a predetermined condition and all of the resistance values are less than the values indicating the insulation state, the connection state between the conductors is judged to be good, and the first to fourth resistances are said to be good. Judgment that the connection state between the conductors is judged to be defective when the mutual relationship between the values does not satisfy the above condition and at least one of the resistance values is at least one of the values indicating the insulation state. Execute the process.

また、請求項2記載の検査装置は、請求項1記載の検査装置において、前記検査部は、前記第1から第4の抵抗値の相互の比率のすべてが予め決められた基準範囲内であることを前記条件として前記判定処理を実行する。 Further, the inspection device according to claim 2 is the inspection device according to claim 1, wherein the inspection unit has all the ratios of the first to fourth resistance values within a predetermined reference range. The determination process is executed with the above condition as the condition.

また、請求項3記載の検査装置は、請求項1または2記載の検査装置において、前記制御部は、前記切替処理において、前記第1の状態、前記第2の状態、前記第3の状態、および前記第4の状態をこの順序で切り替える。 The inspection device according to claim 3 is the inspection device according to claim 1 or 2, wherein the control unit has the first state, the second state, and the third state in the switching process. And the fourth state is switched in this order.

また、請求項4記載の検査装置は、請求項3記載の検査装置において、前記検査部は、前記第1の抵抗値が前記絶縁状態を示す値未満で前記第2の抵抗値が当該絶縁状態を示す値以上のとき、および前記第2の抵抗値が前記絶縁状態を示す値未満で前記第1の抵抗値が当該絶縁状態を示す値以上のときのいずれかのときに、前記各導体同士の接続状態を、極性の相違によって抵抗値が異なる極性依存性不良と判定する。 Further, the inspection device according to claim 4 is the inspection device according to claim 3, wherein the inspection unit has the first resistance value less than the value indicating the insulation state and the second resistance value is the insulation state. When the value indicating the insulation state or more, or when the second resistance value is less than the value indicating the insulation state and the first resistance value is greater than or equal to the value indicating the insulation state, the conductors are connected to each other. Is determined to be a polarity-dependent defect in which the resistance value differs depending on the polarity.

また、請求項5記載の検査装置は、請求項3または4記載の検査装置において、前記検査部は、前記第1の抵抗値と前記第2の抵抗値との比率が前記基準範囲内で、かつ前記第1の抵抗値と前記第3の抵抗値との比率または前記第2の抵抗値と前記第3の抵抗値との比率が前記基準範囲外のときに、前記各導体同士の接続状態を、電流値の相違によって抵抗値が異なる電流値依存性不良と判定する。 Further, the inspection device according to claim 5 is the inspection device according to claim 3 or 4, wherein the inspection unit has a ratio of the first resistance value to the second resistance value within the reference range. When the ratio of the first resistance value to the third resistance value or the ratio of the second resistance value to the third resistance value is out of the reference range, the connection state between the conductors is reached. Is determined to be a current value dependence defect in which the resistance value differs depending on the difference in the current value.

また、請求項6記載の検査方法は、互いに接続される複数の導体に検査用信号を供給している状態で当該各導体間の抵抗値を測定し、当該測定した抵抗値に基づいて前記各導体同士の接続状態を検査する検査方法であって、電流値が第1電流値に規定され電圧値の上限値が第1電圧値に規定された前記検査用信号としての第1の検査用信号を第1極性および当該第1極性を反転した第2極性のいずれか一方の極性で出力して前記各導体に供給する第1の状態と、前記第1の検査用信号を前記第1極性および前記第2極性の他方の極性で出力して前記各導体に供給する第2の状態と、電流値が前記第1電流値よりも大きい第2電流値に規定され電圧値の上限値が前記第1電圧値よりも大きい第2電圧値に規定された前記検査用信号としての第2の検査用信号を前記第1極性および前記第2極性のいずれか一方の極性で出力して前記各導体に供給する第3の状態と、前記第2の検査用信号を前記第1極性および前記第2極性の他方の極性で出力して前記各導体に供給する第4の状態とを切り替える切替処理を実行し、前記第1の状態で測定した前記抵抗値としての第1の抵抗値、前記第2の状態で測定した前記抵抗値としての第2の抵抗値、前記第3の状態で測定した前記抵抗値としての第3の抵抗値、および前記第4の状態で測定した前記抵抗値としての第4の抵抗値の相互の関係が予め決められた条件を満たしかつ当該抵抗値のすべてが絶縁状態を示す値未満のときに前記各導体同士の接続状態を良好と判定し、前記第1から第4の抵抗値の相互の関係が前記条件を満たさないときおよび当該各抵抗値の1つ以上が前記絶縁状態を示す値以上のときの少なくとも一方のときに前記各導体同士の接続状態を不良と判定する判定処理を実行する。 Further, in the inspection method according to claim 6, the resistance value between the conductors is measured in a state where the inspection signal is supplied to a plurality of conductors connected to each other, and each of the above-mentioned inspection methods is based on the measured resistance value. An inspection method for inspecting the connection state between conductors, the first inspection signal as the inspection signal in which the current value is defined by the first current value and the upper limit of the voltage value is defined by the first voltage value. Is output in one of the first polarity and the second polarity in which the first polarity is inverted and supplied to the respective conductors, and the first inspection signal is transmitted to the first polarity and the first polarity. The second state in which the conductor is output with the other polarity of the second polarity and supplied to each conductor, and the second current value whose current value is larger than the first current value are defined, and the upper limit of the voltage value is the first. A second inspection signal as the inspection signal defined by a second voltage value larger than the first voltage value is output to each of the conductors with either the first polarity or the second polarity. A switching process is executed to switch between the third state to be supplied and the fourth state in which the second inspection signal is output with the other polarity of the first polarity and the second polarity and supplied to each conductor. and, said first resistance value as the resistance value measured in the first state, the second resistance value as the resistance value measured in the second state, said measured by the third-state resistance third resistance value as the value, and all insulation state of the fourth resistance value of the mutual relationship predetermined condition satisfied and the resistance value as the resistance value measured in the fourth state When the value is less than the indicated value, the connection state between the conductors is judged to be good, and when the mutual relationship between the first to fourth resistance values does not satisfy the above conditions and one or more of the resistance values is the above. When at least one of the values indicating the insulation state or more, the determination process for determining the connection state between the conductors as defective is executed.

請求項1記載の検査装置、および請求項6記載の検査方法では、第1〜第4の各状態でそれぞれ測定した各導体の各抵抗値の相互の関係が予め決められた条件を満たしかつ各抵抗値のすべてが絶縁状態を示す値未満のときに各導体同士の接続状態を良好と判定し、各抵抗値の相互の関係が条件を満たさないときおよび各抵抗値の1つ以上が絶縁状態を示す値以上のときの少なくとも一方のときに各導体同士の接続状態を不良と判定する判定処理を実行する。このため、この検査装置および検査方法によれば、各導体同士の接続状態の良否を判定するための導体毎の良否判定用基準値を用いることなく各導体同士の接続状態の良否を判定することができる。したがって、この検査装置および検査方法によれば、導体毎の良否判定用基準値を設定するのに必要な多くの労力と時間を省略することができるため、検査効率を十分に向上させることができる。また、この検査装置および検査方法によれば、経験値に基づいて規定される良否判定用基準値を用いないため、良否判定用基準値が適正でない場合の検査精度の低下を確実に防止することができる結果、精度を十分に向上させることができる。 In the inspection device according to claim 1 and the inspection method according to claim 6, the mutual relationship between the resistance values of the conductors measured in each of the first to fourth states satisfies a predetermined condition and each of them. When all of the resistance values are less than the values indicating the insulation state, the connection state between the conductors is judged to be good, and when the mutual relationship of the resistance values does not satisfy the conditions and one or more of the resistance values are in the insulation state. When it is at least one of the values indicating the value or more, the determination process of determining the connection state between the conductors as defective is executed. Therefore, according to this inspection device and the inspection method, it is possible to judge the quality of the connection state between the conductors without using the reference value for quality judgment for each conductor for determining the quality of the connection state between the conductors. Can be done. Therefore, according to this inspection device and inspection method, it is possible to save a lot of labor and time required for setting the quality judgment reference value for each conductor, so that the inspection efficiency can be sufficiently improved. .. In addition, according to this inspection device and inspection method, since the quality judgment reference value defined based on the experience value is not used, it is necessary to surely prevent the inspection accuracy from being lowered when the quality judgment reference value is not appropriate. As a result, the accuracy can be sufficiently improved.

また、請求項2記載の検査装置によれば、各抵抗値の相互の比率のすべてが基準範囲内であることを条件として判定処理を実行することにより、各比率を算出し、各比率と基準範囲とを比較するだけの簡易な処理で各導体同士の接続状態の良否を確実かつ高精度に判定することができる。 Further, according to the inspection apparatus according to claim 2, each ratio is calculated by executing the determination process on the condition that all the mutual ratios of the resistance values are within the reference range, and each ratio and the reference. It is possible to reliably and highly accurately determine the quality of the connection state between conductors by a simple process of comparing with the range.

また、請求項3記載の検査装置では、切替処理において、第1から第4の状態をこの順序で切り替える。この場合、例えば、第3,第4の状態への切り替えを第1,第2の状態への切り替え以前に実行する構成、つまり、大きい電流値の検査用信号を供給した後に小さい電流値の検査用信号を供給する構成を採用することもできる。ただし、この構成では、大きい電流値の検査用信号を供給した時点で、各導体の抵抗値がしばらくの間小さい状態に維持され(つまり、各抵抗値がすべて小さい値となり)、各導体同士の接続状態が電流値依存性不良であるとしても、接続状態が良好と誤判定されるおそれがある。これに対して、この検査装置によれば、第1から第4の状態をこの順序で切り替えることにより、このような誤判定を防止して、電流値依存性不良を正しく判定することができる。 Further, in the inspection device according to claim 3, in the switching process, the first to fourth states are switched in this order. In this case, for example, a configuration in which switching to the third and fourth states is executed before switching to the first and second states, that is, inspection of a small current value after supplying a signal for inspection of a large current value is performed. It is also possible to adopt a configuration for supplying a signal. However, in this configuration, when a large current value inspection signal is supplied, the resistance value of each conductor is maintained in a small state for a while (that is, each resistance value becomes a small value), and each conductor is connected to each other. Even if the connection state is poorly dependent on the current value, it may be erroneously determined that the connection state is good. On the other hand, according to this inspection device, by switching the first to fourth states in this order, such an erroneous determination can be prevented and the current value dependence defect can be correctly determined.

また、請求項4記載の検査装置では、第1の抵抗値が絶縁状態を示す値未満で第2の抵抗値が絶縁状態を示す値以上のとき、および第2の抵抗値が絶縁状態を示す値未満で第1の抵抗値が絶縁状態を示す値以上のときのいずれかのときに、各導体同士の接続状態を、極性の相違によって抵抗値が異なる極性依存性不良と判定する。このため、この検査装置によれば、接続状態の良否を判定するための基準値を用いることなく、各導体同士が絶縁状態のときに測定される一般的な絶縁抵抗値を用いて極性依存性不良を確実に判定することができる。 Further, in the inspection device according to claim 4, when the first resistance value is less than the value indicating the insulation state and the second resistance value is equal to or more than the value indicating the insulation state, and the second resistance value indicates the insulation state. When the value is less than the value and the first resistance value is equal to or greater than the value indicating the insulation state, the connection state between the conductors is determined to be a polarity dependence defect in which the resistance value differs depending on the polarity. Therefore, according to this inspection device, the polarity dependence is performed using a general insulation resistance value measured when each conductor is in an insulated state, without using a reference value for determining the quality of the connected state. Defects can be reliably determined.

また、請求項5記載の検査装置では、第1の抵抗値と第2の抵抗値との比率が基準範囲内で、かつ第1の抵抗値と第3の抵抗値との比率または第2の抵抗値と第3の抵抗値との比率が基準範囲外のときに、各導体同士の接続状態を、電流値の相違によって抵抗値が異なる電流値依存性不良と判定する。このため、この検査装置によれば、接続状態の良否を判定するための基準値を用いることなく、比率と基準範囲とに基づいて電流値依存性不良を確実に判定することができる。 Further, in the inspection device according to claim 5, the ratio of the first resistance value to the second resistance value is within the reference range, and the ratio of the first resistance value to the third resistance value or the second resistance value. When the ratio of the resistance value to the third resistance value is out of the reference range, the connection state between the conductors is determined to be a current value dependence defect in which the resistance value differs depending on the difference in the current value. Therefore, according to this inspection device, it is possible to reliably determine the current value dependence defect based on the ratio and the reference range without using the reference value for determining the quality of the connection state.

基板検査装置1の構成を示す構成図である。It is a block diagram which shows the structure of the substrate inspection apparatus 1. 基板100の構成を示す構成図である。It is a block diagram which shows the structure of the substrate 100. 検査処理50のフローチャートである。It is a flowchart of inspection process 50. 検査処理70のフローチャートである。It is a flowchart of inspection process 70. 多層基板200の構成を示す構成図である。It is a block diagram which shows the structure of the multilayer board 200.

以下、検査装置、検査方法の実施の形態について、添付図面を参照して説明する。 Hereinafter, embodiments of the inspection device and the inspection method will be described with reference to the attached drawings.

最初に、図1に示す基板検査装置1の構成について説明する。基板検査装置1は、検査装置の一例であって、例えば、図2に示す基板100を検査可能に構成されている。 First, the configuration of the substrate inspection device 1 shown in FIG. 1 will be described. The substrate inspection device 1 is an example of an inspection device, and is configured to be capable of inspecting the substrate 100 shown in FIG. 2, for example.

ここで、基板100は、図2に示すように、基板本体101と、基板本体101の一面101a(同図における上面)および他面101b(同図における下面)にそれぞれ形成された導体パターン102a,102b(以下、区別しないときには「導体パターン102」ともいう)と、導体パターン102a,102bを電気的に接続するビア103とを備えて構成されている。なお、基板100は、同図に示す導体パターン102a,102bおよびビア103以外にも、複数の導体パターンおよびビアを備えているが、発明の理解を容易とするため、導体パターン102a,102bおよびビア103以外の図示を省略する。 Here, as shown in FIG. 2, the substrate 100 has conductor patterns 102a formed on the substrate main body 101, one surface 101a (upper surface in the same figure) and the other surface 101b (lower surface in the same figure) of the substrate main body 101, respectively. It is configured to include 102b (hereinafter, also referred to as “conductor pattern 102” when not distinguished) and via 103 that electrically connects the conductor patterns 102a and 102b. The substrate 100 includes a plurality of conductor patterns and vias in addition to the conductor patterns 102a and 102b and vias 103 shown in the figure. However, in order to facilitate understanding of the invention, the conductor patterns 102a and 102b and vias are provided. Illustrations other than 103 will be omitted.

一方、基板検査装置1は、図1に示すように、プロービング機構2a,2b(以下、区別しないときには「プロービング機構2」ともいう)、信号出力部3、測定部4、記憶部5、表示部6および処理部7を備えて構成されている。 On the other hand, as shown in FIG. 1, the substrate inspection device 1 includes probing mechanisms 2a and 2b (hereinafter, also referred to as “probing mechanism 2” when not distinguished), signal output unit 3, measurement unit 4, storage unit 5, and display unit. 6 and a processing unit 7 are provided.

プロービング機構2aは、処理部7の制御に従い、図2に示すように、図外の保持部によって保持された基板100における基板本体101の一面101aに平行な方向、および基板100に対して接離する方向にプローブ21aを移動させて、基板本体101の一面101aに形成されている導体パターン102aにプローブ21aを接触(プロービング)させる。また、プロービング機構2bは、処理部7の制御に従い、同図に示すように、図外の保持部によって保持された基板100における基板本体101の他面101bに平行な方向、および基板100に対して接離する方向にプローブ21bを移動させて、基板本体101の他面101bに形成されている導体パターン102bにプローブ21bを接触(プロービング)させる。 As shown in FIG. 2, the probing mechanism 2a follows the control of the processing unit 7 and is held by a holding unit (not shown) in a direction parallel to one surface 101a of the substrate body 101 and in contact with and detached from the substrate 100. The probe 21a is moved in the direction of the probe 21a to bring the probe 21a into contact (probing) with the conductor pattern 102a formed on one surface 101a of the substrate main body 101. Further, the probing mechanism 2b is controlled by the processing unit 7, and as shown in the figure, the probing mechanism 2b is held by a holding unit (not shown) in a direction parallel to the other surface 101b of the substrate body 101 and with respect to the substrate 100. The probe 21b is moved in the direction of contact and separation, and the probe 21b is brought into contact (probing) with the conductor pattern 102b formed on the other surface 101b of the substrate main body 101.

信号出力部3は、処理部7の制御に従い、処理部7によって実行される後述する検査処理50(図3参照)において用いる検査用信号を出力可能に構成されている。この場合、信号出力部3は、電流値が電流値I1(第1電流値に相当し、一例として、5mA)に規定されると共に、電圧値の上限値が電圧値V1(第1電圧値に相当し、一例として、20mV)に規定された検査用信号S1(第1の検査用信号に相当する)を、第1極性(例えば、図2に示すプローブ21a側を正(+)とし、プローブ21b側を負(−)とする極性)、および第1極性を反転した第2極性(同図に示すプローブ21a側を負(−)とし、プローブ21b側を正(+)とする極性)で切り替えて出力可能に構成されている。また、信号出力部3は、電流値が電流値I1よりも大きい電流値I2(第2電流値に相当し、一例として、100mA)に規定されると共に、電圧値の上限値が電圧値V1よりも大きい電圧値V2(第2電圧値に相当し、一例として、10V)に規定された検査用信号S2(第2の検査用信号に相当し、検査用信号S1,S2を区別しないときには「検査用信号S」ともいう)を、上記した第1極性および第2極性で切り替えて出力可能に構成されている。 The signal output unit 3 is configured to be able to output an inspection signal used in the inspection process 50 (see FIG. 3), which will be described later, executed by the processing unit 7 under the control of the processing unit 7. In this case, in the signal output unit 3, the current value is defined by the current value I1 (corresponding to the first current value, 5 mA as an example), and the upper limit of the voltage value is the voltage value V1 (the first voltage value). Correspondingly, as an example, the inspection signal S1 (corresponding to the first inspection signal) defined in 20 mV) is set to the first polarity (for example, the probe 21a side shown in FIG. 2 is positive (+), and the probe. A polarity with the 21b side as negative (-)) and a second polarity with the first polarity reversed (the polarity with the probe 21a side shown in the figure as negative (-) and the probe 21b side as positive (+)). It is configured so that it can be switched and output. Further, the signal output unit 3 is defined by a current value I2 (corresponding to the second current value, 100 mA as an example) whose current value is larger than the current value I1, and the upper limit of the voltage value is higher than the voltage value V1. When the inspection signal S2 (corresponding to the second inspection signal and corresponding to the second inspection signal and the inspection signals S1 and S2 are not distinguished) specified in the large voltage value V2 (corresponding to the second voltage value and, for example, 10V), "inspection" The signal S) can be switched between the above-mentioned first polarity and the second polarity for output.

測定部4は、処理部7の制御に従い、信号出力部3から出力された検査用信号Sがプローブ21a,21bを介して各導体パターン102およびビア103に供給されている状態で各導体パターン102およびビア103間の抵抗値を測定する。なお、検査用信号S1が第1極性(第1極性および第2極性のいずれか一方の一例)で信号出力部3から出力されて各導体パターン102およびビア103に供給されている状態(第1の状態に相当する)で測定部4が測定した抵抗値を、抵抗値R1(第1の抵抗値に相当する)ともいい、検査用信号S1が第2極性(第1極性および第2極性の他方の一例)で信号出力部3から出力されて各導体パターン102およびビア103に供給されている状態(第2の状態に相当する)で測定部4が測定した抵抗値を、抵抗値R2(第2の抵抗値に相当する)ともいう。また、検査用信号S2が第1極性(第1極性および第2極性のいずれか一方の一例)で信号出力部3から出力されて各導体パターン102およびビア103に供給されている状態(第3の状態に相当する)で測定部4が測定した抵抗値を、抵抗値R3(第3の抵抗値に相当する)ともいい、検査用信号S2が第2極性(第1極性および第2極性の他方の一例)で信号出力部3から出力されて各導体パターン102およびビア103に供給されている状態(第4の状態に相当する)で測定部4が測定した抵抗値を、抵抗値R4(第4の抵抗値に相当する)ともいう。また、抵抗値R1〜R4を区別しないときには「抵抗値R」ともいう。 According to the control of the processing unit 7, the measuring unit 4 supplies the inspection signal S output from the signal output unit 3 to the conductor patterns 102 and vias 103 via the probes 21a and 21b, and the conductor patterns 102. And the resistance value between the vias 103 is measured. The inspection signal S1 is output from the signal output unit 3 in the first polarity (an example of either the first polarity or the second polarity) and supplied to each conductor pattern 102 and via 103 (first). The resistance value measured by the measuring unit 4 in (corresponding to the state of) is also referred to as the resistance value R1 (corresponding to the first resistance value), and the inspection signal S1 has the second polarity (first polarity and second polarity). In the other example), the resistance value measured by the measuring unit 4 in the state of being output from the signal output unit 3 and being supplied to each conductor pattern 102 and the via 103 (corresponding to the second state) is set to the resistance value R2 (corresponding to the second state). It is also called (corresponding to the second resistance value). Further, the inspection signal S2 is output from the signal output unit 3 in the first polarity (an example of either the first polarity or the second polarity) and supplied to each conductor pattern 102 and via 103 (third). The resistance value measured by the measuring unit 4 in (corresponding to the state of) is also referred to as the resistance value R3 (corresponding to the third resistance value), and the inspection signal S2 has the second polarity (first polarity and second polarity). In the other example), the resistance value measured by the measuring unit 4 in the state of being output from the signal output unit 3 and being supplied to each conductor pattern 102 and the via 103 (corresponding to the fourth state) is set to the resistance value R4 (corresponding to the fourth state). It is also called (corresponding to the fourth resistance value). Further, when the resistance values R1 to R4 are not distinguished, it is also referred to as "resistance value R".

記憶部5は、検査処理50において用いられる基板データDsおよび判定用データDjを記憶する。この場合、基板データDsには、基板100の導体パターン102にプローブ21をプロービングさせる位置(プロービング位置)を示すデータが含まれている。また、判定用データDjには、検査処理50において導体パターン102とビア103との接続状態の良否を判定する際に用いる基準範囲Aおよび絶縁抵抗値Riを示すデータが含まれている。また、記憶部5は、測定部4によって測定された抵抗値R1〜R4を記憶する。 The storage unit 5 stores the substrate data Ds and the determination data Dj used in the inspection process 50. In this case, the substrate data Ds includes data indicating a position (probing position) for probing the probe 21 on the conductor pattern 102 of the substrate 100. Further, the determination data Dj includes data indicating the reference range A and the insulation resistance value Ri used when determining the quality of the connection state between the conductor pattern 102 and the via 103 in the inspection process 50. Further, the storage unit 5 stores the resistance values R1 to R4 measured by the measurement unit 4.

表示部6は、処理部7の制御に従って各種の情報を表示する。 The display unit 6 displays various information according to the control of the processing unit 7.

処理部7は、制御部として機能し、基板検査装置1を構成する各部を制御する。また、処理部7は、検査部として機能し、予め決められた検査方法に従って検査処理50を実行して基板100における導体パターン102とビア103との接続状態を判定し、その判定結果に基づいて基板100の良否を検査する。 The processing unit 7 functions as a control unit and controls each unit constituting the substrate inspection device 1. Further, the processing unit 7 functions as an inspection unit, executes the inspection process 50 according to a predetermined inspection method, determines the connection state between the conductor pattern 102 and the via 103 on the substrate 100, and based on the determination result. The quality of the substrate 100 is inspected.

次に、基板検査装置1を用いて、例えば図2に示す基板100を検査する検査方法について、図面を参照して説明する。 Next, an inspection method for inspecting the substrate 100 shown in FIG. 2, for example, using the substrate inspection apparatus 1 will be described with reference to the drawings.

まず、図外の保持部に基板100を保持させ、次いで、図外の操作部を操作して、検査の開始を指示する。これに応じて、処理部7が、図3に示す検査処理50を実行する。この検査処理50では、処理部7は、基板100についての基板データDsおよび判定用データDjを記憶部5から読み出す(ステップ51)。 First, the substrate 100 is held by the holding portion (not shown), and then the operating portion (not shown) is operated to instruct the start of the inspection. In response to this, the processing unit 7 executes the inspection process 50 shown in FIG. In the inspection process 50, the processing unit 7 reads out the substrate data Ds and the determination data Dj about the substrate 100 from the storage unit 5 (step 51).

続いて、処理部7は、基板100における基板本体101の一面101aおよび他面101bにそれぞれ形成されている導体パターン102a,102b上に規定されているプロービング位置を、基板データDsに基づいて特定する(ステップ52)。 Subsequently, the processing unit 7 specifies the probing positions defined on the conductor patterns 102a and 102b formed on one surface 101a and the other surface 101b of the substrate body 101 on the substrate 100 based on the substrate data Ds. (Step 52).

次いで、処理部7は、プロービング機構2a,2bを制御してプローブ21a,21bを移動させ、導体パターン102a,102bの各プロービング位置にプローブ21a,21bをそれぞれプロービングさせる(ステップ53)。 Next, the processing unit 7 controls the probing mechanisms 2a and 2b to move the probes 21a and 21b, and probing the probes 21a and 21b to the probing positions of the conductor patterns 102a and 102b, respectively (step 53).

続いて、処理部7は、ステップ54を実行する。このステップ54では、処理部7は、第1の状態への切り替えを行う。具体的には、処理部7は、信号出力部3を制御して、検査用信号S1を第1極性(図2に示すプローブ21a側を正(+)とし、プローブ21b側を負(−)とする極性)で出力させる。この際に、検査用信号S1が、プローブ21a,21bを介して各導体パターン102およびビア103に供給される。また、信号出力部3は、電流値を電流値I1に維持すると共に、電圧値が電圧値V1以下となるように検査用信号S1の出力を制御する。 Subsequently, the processing unit 7 executes step 54. In this step 54, the processing unit 7 switches to the first state. Specifically, the processing unit 7 controls the signal output unit 3 to set the inspection signal S1 to the first polarity (the probe 21a side shown in FIG. 2 is positive (+) and the probe 21b side is negative (-)). Output with the polarity). At this time, the inspection signal S1 is supplied to each conductor pattern 102 and via 103 via the probes 21a and 21b. Further, the signal output unit 3 maintains the current value at the current value I1 and controls the output of the inspection signal S1 so that the voltage value becomes the voltage value V1 or less.

次いで、処理部7は、測定部4を制御して、第1の状態で各導体パターン102およびビア103間の抵抗値R1を測定させる。この場合、測定部4は、信号出力部3から供給されている検査用信号S1の電流値(電流値I1)と、プローブ21a,21b間の電圧値とに基づいて抵抗値R1を測定する。また、処理部7は、測定された抵抗値R1を記憶部5に記憶させる。 Next, the processing unit 7 controls the measuring unit 4 to measure the resistance value R1 between each conductor pattern 102 and the via 103 in the first state. In this case, the measuring unit 4 measures the resistance value R1 based on the current value (current value I1) of the inspection signal S1 supplied from the signal output unit 3 and the voltage value between the probes 21a and 21b. Further, the processing unit 7 stores the measured resistance value R1 in the storage unit 5.

続いて、処理部7は、ステップ55を実行する。このステップ55では、処理部7は、第2の状態への切り替えを行う。具体的には、処理部7が、信号出力部3を制御して検査用信号S1を第2極性(第1極性を反転した極性)で出力させ、各導体パターン102およびビア103に検査用信号S1を供給させる。この際に、信号出力部3は、電流値を電流値I1に維持すると共に、電圧値が電圧値V1以下となるように検査用信号S1の出力を制御する。次いで、処理部7は、測定部4を制御して、第2の状態で各導体パターン102およびビア103間の抵抗値R2を測定させ、測定された抵抗値R2を記憶部5に記憶させる。 Subsequently, the processing unit 7 executes step 55. In this step 55, the processing unit 7 switches to the second state. Specifically, the processing unit 7 controls the signal output unit 3 to output the inspection signal S1 with the second polarity (the polarity in which the first polarity is inverted), and the inspection signal is output to each conductor pattern 102 and via 103. S1 is supplied. At this time, the signal output unit 3 maintains the current value at the current value I1 and controls the output of the inspection signal S1 so that the voltage value becomes the voltage value V1 or less. Next, the processing unit 7 controls the measuring unit 4 to measure the resistance value R2 between each conductor pattern 102 and the via 103 in the second state, and stores the measured resistance value R2 in the storage unit 5.

続いて、処理部7は、ステップ56を実行する。このステップ56では、処理部7は、第3の状態への切り替えを行う。具体的には、処理部7が、信号出力部3を制御して検査用信号S2を第1極性で出力させ、各導体パターン102およびビア103に検査用信号S2を供給させる。この際に、信号出力部3は、電流値を電流値I2に維持すると共に、電圧値が電圧値V2以下となるように検査用信号S2の出力を制御する。次いで、処理部7は、測定部4を制御して、第3の状態で各導体パターン102およびビア103間の抵抗値R3を測定させ、測定された抵抗値R3を記憶部5に記憶させる。 Subsequently, the processing unit 7 executes step 56. In this step 56, the processing unit 7 switches to the third state. Specifically, the processing unit 7 controls the signal output unit 3 to output the inspection signal S2 with the first polarity, and supplies the inspection signal S2 to each conductor pattern 102 and via 103. At this time, the signal output unit 3 maintains the current value at the current value I2 and controls the output of the inspection signal S2 so that the voltage value becomes the voltage value V2 or less. Next, the processing unit 7 controls the measuring unit 4 to measure the resistance value R3 between each conductor pattern 102 and the via 103 in the third state, and stores the measured resistance value R3 in the storage unit 5.

続いて、処理部7は、ステップ57を実行する。このステップ57では、処理部7は、第4の状態への切り替えを行う。具体的には、処理部7が、信号出力部3を制御して検査用信号S2を第2極性で出力させ、各導体パターン102およびビア103に検査用信号S2を供給させる。この際に、信号出力部3は、電流値を電流値I2に維持すると共に、電圧値が電圧値V2以下となるように検査用信号S2の出力を制御する。次いで、処理部7は、測定部4を制御して、第4の状態で各導体パターン102およびビア103間の抵抗値R4を測定させ、測定された抵抗値R4を記憶部5に記憶させる。なお、上記したステップ54〜57において行った各状態への切り替えが切替処理に相当する。 Subsequently, the processing unit 7 executes step 57. In this step 57, the processing unit 7 switches to the fourth state. Specifically, the processing unit 7 controls the signal output unit 3 to output the inspection signal S2 with the second polarity, and supplies the inspection signal S2 to each conductor pattern 102 and via 103. At this time, the signal output unit 3 maintains the current value at the current value I2 and controls the output of the inspection signal S2 so that the voltage value becomes the voltage value V2 or less. Next, the processing unit 7 controls the measuring unit 4 to measure the resistance value R4 between each conductor pattern 102 and the via 103 in the fourth state, and stores the measured resistance value R4 in the storage unit 5. The switching to each state performed in steps 54 to 57 described above corresponds to the switching process.

続いて、処理部7は、導体パターン102とビア103との接続状態の良否を判定する判定処理を実行する(ステップ58)。この判定処理では、処理部7は、まず、記憶部5から抵抗値R1〜R4を読み出す。次いで、処理部7は、各抵抗値R1〜R4の相互の比率p1〜p4(一例として、p1=R1/R2,p2=R2/R3,p3=R3/R4,p4=R4/R1)を算出する。続いて、処理部7は、各比率p1〜p4のすべてが予め規定された基準範囲A(一例として、0.8〜1.2の範囲)内との条件を満たし、かつ各抵抗値R1〜R4のすべてが絶縁状態を示す絶縁抵抗値Ri(一例として、100MΩ)未満であるか否かを判別する。 Subsequently, the processing unit 7 executes a determination process for determining the quality of the connection state between the conductor pattern 102 and the via 103 (step 58). In this determination process, the processing unit 7 first reads the resistance values R1 to R4 from the storage unit 5. Next, the processing unit 7 calculates the mutual ratio p1 to p4 of each resistance value R1 to R4 (for example, p1 = R1 / R2, p2 = R2 / R3, p3 = R3 / R4, p4 = R4 / R1). do. Subsequently, the processing unit 7 satisfies the condition that all of the ratios p1 to p4 are within the predetermined reference range A (for example, the range of 0.8 to 1.2), and each resistance value R1 to R1. It is determined whether or not all of R4 are less than the insulation resistance value Ri (for example, 100 MΩ) indicating the insulation state.

ここで、例えば、導体パターン102とビア103とが絶縁状態のとき(導体パターン102とビア103とが離間しているとき)には、抵抗値R1〜R4が絶縁抵抗値Ri以上となる。このため、処理部7は、抵抗値R1〜R4の1つ以上が絶縁抵抗値Ri以上のときには、導体パターン102とビア103との接続状態が不良(導通不良)と判定する。 Here, for example, when the conductor pattern 102 and the via 103 are in an insulated state (when the conductor pattern 102 and the via 103 are separated from each other), the resistance values R1 to R4 are equal to or higher than the insulating resistance value Ri. Therefore, when one or more of the resistance values R1 to R4 are equal to or higher than the insulation resistance value Ri, the processing unit 7 determines that the connection state between the conductor pattern 102 and the via 103 is poor (conduction failure).

一方、この種の基板100では、導体パターン102とビア103とが接続されているものの、導体パターン102とビア103とを接続する際に用いる材料に含まれる成分と導体パターン102およびビア103を構成する金属とによって半導体が形成され、この半導体と金属とによって整流作用を示すショットキー接続が導体パターン102とビア103との接続部分に形成されることがある。このような導体パターン102およびビア103では、検査用信号Sの極性の相違によって抵抗値が異なる(極性依存性がある)ことがある。具体的には、このような導体パターン102およびビア103では、例えば第1極性で検査用信号S1を供給したときには、抵抗値R1が適正な値で、第2極性で検査用信号S1を供給したときには、抵抗値R2が絶縁抵抗値Ri以上となり、抵抗値R1と抵抗値R2との比率p1(p1=R1/R2)が基準範囲A外となることがある。また、これとは逆に、第1極性で検査用信号S1を供給したときには、抵抗値R1が絶縁抵抗値Ri以上で、第2極性で検査用信号S1を供給したときには、抵抗値R2が適正な値となり、比率p1が基準範囲A外となることもある。また、例えば第1極性で検査用信号S2を供給したときには、抵抗値R3が適正な値で、第2極性で検査用信号S2を供給したときには、抵抗値R4が絶縁抵抗値Ri以上となり、抵抗値R3と抵抗値R4との比率p3(p3=R3/R4)が基準範囲A外となることもある。さらに、これとは逆に、第1極性で検査用信号S2を供給したときには、抵抗値R3が絶縁抵抗値Ri以上で、第2極性で検査用信号S2を供給したときには、抵抗値R4が適正な値となり、比率p3が基準範囲A外となることもある。このため、処理部7は、比率p1または比率p3が基準範囲A外のときには、導体パターン102とビア103との接続状態が不良(極性依存性不良)と判定する。 On the other hand, in this type of substrate 100, although the conductor pattern 102 and the via 103 are connected, the conductor pattern 102 and the via 103 are composed of the components contained in the material used when connecting the conductor pattern 102 and the via 103. A semiconductor may be formed by the metal to be formed, and a shotkey connection exhibiting a rectifying action may be formed at the connection portion between the conductor pattern 102 and the via 103 by the semiconductor and the metal. In such a conductor pattern 102 and the via 103, the resistance value may differ (there is a polarity dependence) due to the difference in the polarity of the inspection signal S. Specifically, in such a conductor pattern 102 and via 103, for example, when the inspection signal S1 is supplied with the first polarity, the resistance value R1 is an appropriate value and the inspection signal S1 is supplied with the second polarity. Occasionally, the resistance value R2 becomes equal to or higher than the insulation resistance value Ri, and the ratio p1 (p1 = R1 / R2) of the resistance value R1 and the resistance value R2 may be outside the reference range A. On the contrary, when the inspection signal S1 is supplied with the first polarity, the resistance value R1 is equal to or higher than the insulation resistance value Ri, and when the inspection signal S1 is supplied with the second polarity, the resistance value R2 is appropriate. The value may be such that the ratio p1 may be outside the reference range A. Further, for example, when the inspection signal S2 is supplied with the first polarity, the resistance value R3 is an appropriate value, and when the inspection signal S2 is supplied with the second polarity, the resistance value R4 becomes the insulation resistance value Ri or more, and the resistance. The ratio p3 (p3 = R3 / R4) of the value R3 and the resistance value R4 may be outside the reference range A. Further, conversely, when the inspection signal S2 is supplied with the first polarity, the resistance value R3 is equal to or higher than the insulation resistance value Ri, and when the inspection signal S2 is supplied with the second polarity, the resistance value R4 is appropriate. The value may be such that the ratio p3 may be outside the reference range A. Therefore, when the ratio p1 or the ratio p3 is outside the reference range A, the processing unit 7 determines that the connection state between the conductor pattern 102 and the via 103 is defective (polarity dependence defect).

また、導体パターン102とビア103とが接続されているものの、その接続が不十分なとき、具体的には、導体パターン102とビア103とが点的に接続し、接続部分の面積が僅かなときには、導体パターン102およびビア103に供給する検査用信号Sの電流値の相違によって抵抗値が異なる(電流値依存性がある)ことがある。具体的には、このように導体パターン102とビア103との接続が不十分なときには、電流値が大きい検査用信号S2を供給したときの抵抗値R3,R4が、電流値が小さい検査用信号S1を供給したときの抵抗値R1,R2よりも小さくなり、抵抗値R2と抵抗値R3との比率p2(p2=R2/R3)や抵抗値R4と抵抗値R1との比率p4(p4=R4/R1)が基準範囲A外となることがある。このため、処理部7は、比率p2または比率p4が基準範囲A外のときには、導体パターン102とビア103との接続状態が不良(電流値依存性不良)と判定する。 Further, when the conductor pattern 102 and the via 103 are connected but the connection is insufficient, specifically, the conductor pattern 102 and the via 103 are connected in a pointed manner, and the area of the connecting portion is small. Occasionally, the resistance value may differ (there is a current value dependence) due to the difference in the current value of the inspection signal S supplied to the conductor pattern 102 and the via 103. Specifically, when the connection between the conductor pattern 102 and the via 103 is insufficient, the resistance values R3 and R4 when the inspection signal S2 having a large current value is supplied are the inspection signals having a small current value. It becomes smaller than the resistance values R1 and R2 when S1 is supplied, and the ratio p2 (p2 = R2 / R3) between the resistance value R2 and the resistance value R3 and the ratio p4 (p4 = R4) between the resistance value R4 and the resistance value R1. / R1) may be outside the reference range A. Therefore, when the ratio p2 or the ratio p4 is outside the reference range A, the processing unit 7 determines that the connection state between the conductor pattern 102 and the via 103 is defective (current value dependence defect).

この場合、例えば、第3の状態や第4の状態への切り替えを、第1の状態や第2の状態への切り替え以前に実行する構成および方法、つまり、大きい電流値の検査用信号S2を供給した後に小さい電流値の検査用信号S1を供給する構成および方法では、検査用信号S2を供給した時点で、導体パターン102とビア103との接続状態が改善されて導体パターン102およびビア103の抵抗値がしばらくの間小さい状態に維持されることがある。このときには、抵抗値R1〜R4がすべて小さい値となって、導体パターン102とビア103との接続状態が電流値依存性不良であるとしても、接続状態が良好と誤判定される(良好とみなされる)おそれがある。これに対して、この基板検査装置1では、第1から第4の状態をこの順序で切り替えることにより、このような誤判定を防止して、電流値依存性不良を正しく判定することが可能となっている。なお、この基板検査装置1では、検査用信号S1の電流値I1が、上記した導体パターン102とビア103との接続状態の改善を防止する程度に小さい値(この例では、5mA)に規定されている。 In this case, for example, a configuration and method for performing switching to the third state or the fourth state before switching to the first state or the second state, that is, the inspection signal S2 having a large current value. In the configuration and method of supplying the inspection signal S1 having a small current value after the supply, the connection state between the conductor pattern 102 and the via 103 is improved when the inspection signal S2 is supplied, and the conductor pattern 102 and the via 103 are supplied. The resistance value may remain low for some time. At this time, the resistance values R1 to R4 are all small values, and even if the connection state between the conductor pattern 102 and the via 103 has poor current value dependence, it is erroneously determined that the connection state is good (considered to be good). There is a risk. On the other hand, in the substrate inspection device 1, by switching the first to fourth states in this order, it is possible to prevent such an erroneous determination and correctly determine the current value dependence defect. It has become. In the substrate inspection device 1, the current value I1 of the inspection signal S1 is defined as a value small enough to prevent the improvement of the connection state between the conductor pattern 102 and the via 103 (5 mA in this example). ing.

一方、導体パターン102およびビア103について、上記した各種の不良(導通不良、極性依存性不良および電流値依存性不良)が存在しないときには、抵抗値R1〜R4の相互の比率p1〜p4のすべてが基準範囲A内で(予め決められた条件を満たし)、かつ抵抗値R1〜R4のすべてが絶縁抵抗値Ri未満となる。このため、処理部7は、比率p1〜p4のすべてが基準範囲A内で、かつ抵抗値R1〜R4のすべてが絶縁抵抗値Ri未満のときには、導体パターン102とビア103との接続状態が良好と判定する。 On the other hand, with respect to the conductor pattern 102 and the via 103, when the above-mentioned various defects (conductivity defect, polarity dependence defect and current value dependence defect) do not exist, all of the mutual ratios p1 to p4 of the resistance values R1 to R4 are all. Within the reference range A (satisfying predetermined conditions), all of the resistance values R1 to R4 are less than the insulation resistance value Ri. Therefore, when all of the ratios p1 to p4 are within the reference range A and all of the resistance values R1 to R4 are less than the insulation resistance value Ri, the processing unit 7 has a good connection state between the conductor pattern 102 and the via 103. Is determined.

次いで、処理部7は、すべての導体パターン102についての接続状態の良否の判定が終了したか否かを判別する(ステップ59)。 Next, the processing unit 7 determines whether or not the determination of the quality of the connection state of all the conductor patterns 102 has been completed (step 59).

この場合、すべての導体パターン102およびビア103についての接続状態の良否の判定が終了していないと判別したときには、処理部7は、図外の他の導体パターンにおけるプロービング位置を特定し(ステップ52)、続いて、上記したステップ53〜ステップ58の各処理を実行して、他の導体パターンおよびビアの接続状態の良否を判定する。 In this case, when it is determined that the determination of the quality of the connection state of all the conductor patterns 102 and the via 103 has not been completed, the processing unit 7 specifies the probing position in another conductor pattern (step 52). ), Subsequently, each of the above-mentioned processes of steps 53 to 58 is executed to determine whether or not the other conductor patterns and vias are connected.

以下、同様にして、処理部7は、他のすべての導体パターンおよびビアの接続状態の良否を判定する。 Hereinafter, in the same manner, the processing unit 7 determines whether or not all the other conductor patterns and vias are connected.

次いで、処理部7は、ステップ59において、すべての導体パターンおよびビアの接続状態の良否の判定が終了したと判別したときには、その判定結果に基づいて基板100の良否判定を行い、判定結果を表示部6に表示させる(ステップ60)。この場合、処理部7は、すべての導体パターンおよびビアの接続状態が良好と判定したときには、基板100を良好と判定して、その旨を表示部6に表示させる。また、1組以上の導体パターンおよびビアの接続状態が不良と判定したときには、基板100を不良と判定して、その旨、および接続状態が不良と判定した導体パターンおよびビアを示す情報を表示部6に表示させて、検査処理50を終了する。 Next, when the processing unit 7 determines in step 59 that the determination of the quality of the connection state of all the conductor patterns and vias has been completed, the processing unit 7 determines the quality of the substrate 100 based on the determination result and displays the determination result. Displayed in unit 6 (step 60). In this case, when the processing unit 7 determines that all the conductor patterns and the connection states of the vias are good, the processing unit 7 determines that the substrate 100 is good, and causes the display unit 6 to indicate that fact. When it is determined that the connection state of one or more sets of conductor patterns and vias is defective, the substrate 100 is determined to be defective, and information indicating that fact and the conductor pattern and vias for which the connection state is determined to be defective is displayed on the display unit. 6 is displayed, and the inspection process 50 is completed.

次に、処理部7が、上記した検査処理50に代えて、図4に示す検査処理70を実行する構成および方法について説明する。なお、検査処理70において、検査処理50のステップと同様の処理を行うステップについては、重複する説明を省略する。 Next, a configuration and a method in which the processing unit 7 executes the inspection process 70 shown in FIG. 4 instead of the inspection process 50 described above will be described. In the inspection process 70, duplicate description will be omitted for the step of performing the same process as the step of the inspection process 50.

この検査処理70では、抵抗値R1〜R4のすべてを測定した後に判定処理を実行する検査処理50とは異なり、抵抗値R1〜R4を測定する毎に判定処理を実行する。具体的には、図4に示すように、第1の状態への切り替え、および抵抗値R1の測定を実行した後に、導体パターン102とビア103との接続状態の良否の判定を実行する(ステップ74)。この際に、例えば、抵抗値R1が絶縁抵抗値Ri以上であって、導体パターン102とビア103との接続状態が不良(導通不良)と判定したときには(ステップ75)、処理部7は、第2〜第4の状態への切り替え、および抵抗値R2〜R4の測定(ステップ76〜ステップ80)を実行することなく、検査処理50のステップ59と同様のステップ81を実行する。 In this inspection process 70, unlike the inspection process 50 in which the determination process is executed after all the resistance values R1 to R4 are measured, the determination process is executed every time the resistance values R1 to R4 are measured. Specifically, as shown in FIG. 4, after switching to the first state and measuring the resistance value R1, the quality of the connection state between the conductor pattern 102 and the via 103 is determined (step). 74). At this time, for example, when the resistance value R1 is equal to or higher than the insulation resistance value Ri and the connection state between the conductor pattern 102 and the via 103 is determined to be defective (conduction defect) (step 75), the processing unit 7 is subjected to the first step. Step 81 similar to step 59 of the inspection process 50 is executed without switching to the second to fourth states and measuring the resistance values R2 to R4 (steps 76 to 80).

一方、抵抗値R1が絶縁抵抗値Ri未満のときには、ステップ75において、導体パターン102とビア103との接続状態が不良とは判定せずに、ステップ76を実行して、第2の状態への切り替え、および抵抗値R2の測定を実行した後に、接続状態の良否の判定を実行する。この際に、例えば、抵抗値R2が絶縁抵抗値Ri以上、または比率p1(p1=R1/R2)が基準範囲A外であって、導体パターン102とビア103との接続状態が不良(導通不良または極性依存性不良)と判定したときには(ステップ77)、処理部7は、第3,第4の状態への切り替え、および抵抗値R3,R4の測定(ステップ78〜ステップ80)を実行することなく、ステップ81を実行する。 On the other hand, when the resistance value R1 is less than the insulation resistance value Ri, in step 75, the connection state between the conductor pattern 102 and the via 103 is not determined to be defective, and step 76 is executed to return to the second state. After switching and measuring the resistance value R2, the quality of the connection state is determined. At this time, for example, the resistance value R2 is equal to or higher than the insulation resistance value Ri, or the ratio p1 (p1 = R1 / R2) is outside the reference range A, and the connection state between the conductor pattern 102 and the via 103 is poor (conduction failure). When it is determined (or polarity dependence defect) (step 77), the processing unit 7 switches to the third and fourth states and executes the measurement of the resistance values R3 and R4 (steps 78 to 80). Instead, step 81 is executed.

また、抵抗値R2が絶縁抵抗値Ri未満で、かつ比率p1が基準範囲A内のときには、ステップ77において、導体パターン102とビア103との接続状態が不良とは判定せずに、ステップ78を実行して、第3の状態への切り替え、および抵抗値R3の測定を実行した後に、接続状態の良否の判定を実行する。この際に、例えば、抵抗値R3が絶縁抵抗値Ri以上、または比率p2(p2=R2/R3)が基準範囲A外であって、導体パターン102とビア103との接続状態が不良(導通不良または電流値依存性不良)と判定したときには(ステップ79)、処理部7は、第4の状態への切り替え、および抵抗値R4の測定(ステップ80)を実行することなく、ステップ81を実行する。 Further, when the resistance value R2 is less than the insulation resistance value Ri and the ratio p1 is within the reference range A, in step 77, the connection state between the conductor pattern 102 and the via 103 is not determined to be defective, and step 78 is performed. After executing the switching to the third state and the measurement of the resistance value R3, the judgment of the quality of the connection state is executed. At this time, for example, the resistance value R3 is equal to or higher than the insulation resistance value Ri, or the ratio p2 (p2 = R2 / R3) is outside the reference range A, and the connection state between the conductor pattern 102 and the via 103 is poor (conduction failure). When it is determined (step 79), the processing unit 7 executes step 81 without switching to the fourth state and measuring the resistance value R4 (step 80). ..

また、抵抗値R3が絶縁抵抗値Ri未満で、かつ比率p2が基準範囲A内のときには、ステップ79において、導体パターン102とビア103との接続状態が不良とは判定せずに、ステップ80を実行して、第4の状態への切り替え、および抵抗値R4の測定を実行した後に、接続状態の良否の判定を実行する。この際に、例えば、抵抗値R4が絶縁抵抗値Ri以上、または比率p3(p3=R3/R4)が基準範囲A外、または比率p4(p4=R4/R1)が基準範囲A外のときには、処理部7は、導体パターン102とビア103との接続状態が不良(導通不良または極性依存性不良または電流値依存性不良)と判定する。一方、抵抗値R4が絶縁抵抗値Ri未満で、かつ比率p3および比率p4がいずれも基準範囲A内のときには、処理部7は、導体パターン102とビア103との接続状態が良好と判定する。続いて、処理部7は、ステップ81を実行する。 Further, when the resistance value R3 is less than the insulation resistance value Ri and the ratio p2 is within the reference range A, in step 79, the connection state between the conductor pattern 102 and the via 103 is not determined to be defective, and step 80 is performed. After executing the switching to the fourth state and the measurement of the resistance value R4, the judgment of the quality of the connection state is executed. At this time, for example, when the resistance value R4 is equal to or higher than the insulation resistance value Ri, the ratio p3 (p3 = R3 / R4) is outside the reference range A, or the ratio p4 (p4 = R4 / R1) is outside the reference range A, The processing unit 7 determines that the connection state between the conductor pattern 102 and the via 103 is defective (conductivity failure, polarity dependence failure, or current value dependence failure). On the other hand, when the resistance value R4 is less than the insulation resistance value Ri and both the ratio p3 and the ratio p4 are within the reference range A, the processing unit 7 determines that the connection state between the conductor pattern 102 and the via 103 is good. Subsequently, the processing unit 7 executes step 81.

この検査処理70を実行する構成および方法では、上記したように、抵抗値R1〜R4を測定する毎に判定処理を実行し、導体パターン102とビア103との接続状態が不良と判定した時点で、他の状態への切り替えや他の抵抗値Rの測定を省略することができるため、その分、検査効率を十分に向上させることが可能となる。 In the configuration and method for executing the inspection process 70, as described above, the determination process is executed every time the resistance values R1 to R4 are measured, and when it is determined that the connection state between the conductor pattern 102 and the via 103 is defective. Since switching to another state and measurement of another resistance value R can be omitted, the inspection efficiency can be sufficiently improved accordingly.

このように、この基板検査装置1および検査方法では、第1〜第4の各状態でそれぞれ測定した導体パターン102およびビア103の抵抗値R1〜R4の相互の関係が予め決められた条件を満たしかつ抵抗値R1〜R4のすべてが絶縁抵抗値Ri未満のときに導体パターン102とビア103との接続状態を良好と判定し、抵抗値R1〜R4の相互の関係が条件を満たさないときおよび抵抗値R1〜R4の1つ以上が絶縁抵抗値Ri以上のときの少なくとも一方のときに導体パターン102とビア103との接続状態を不良と判定する判定処理を実行する。このため、この基板検査装置1および検査方法によれば、導体パターン102とビア103との接続状態の良否を判定するための導体パターン102およびビア103毎の良否判定用基準値を用いることなく導体パターン102とビア103との接続状態の良否を判定することができる。したがって、この基板検査装置1および検査方法によれば、導体パターン102およびビア103毎の良否判定用基準値を設定するのに必要な多くの労力と時間を省略することができるため、検査効率を十分に向上させることができる。また、この基板検査装置1および検査方法によれば、経験値に基づいて規定される良否判定用基準値を用いないため、良否判定用基準値が適正でない場合の検査精度の低下を確実に防止することができる結果、精度を十分に向上させることができる。 As described above, in the substrate inspection device 1 and the inspection method, the mutual relationship between the resistance values R1 to R4 of the conductor pattern 102 and the via 103 measured in each of the first to fourth states satisfies a predetermined condition. When all of the resistance values R1 to R4 are less than the insulation resistance value Ri, the connection state between the conductor pattern 102 and the via 103 is judged to be good, and when the mutual relationship between the resistance values R1 to R4 does not satisfy the conditions and the resistance. When at least one of the values R1 to R4 is at least one of the insulation resistance values Ri or more, the determination process of determining the connection state between the conductor pattern 102 and the via 103 as defective is executed. Therefore, according to the substrate inspection device 1 and the inspection method, the conductor pattern 102 for determining the quality of the connection state between the conductor pattern 102 and the via 103 and the conductor pattern 102 and the reference value for quality determination for each via 103 are not used. It is possible to determine whether the connection state between the pattern 102 and the via 103 is good or bad. Therefore, according to the substrate inspection device 1 and the inspection method, a lot of labor and time required for setting the pass / fail judgment reference value for each of the conductor pattern 102 and the via 103 can be omitted, so that the inspection efficiency can be improved. It can be improved sufficiently. Further, according to the substrate inspection device 1 and the inspection method, since the quality judgment reference value defined based on the empirical value is not used, the deterioration of the inspection accuracy when the quality judgment reference value is not appropriate is surely prevented. As a result, the accuracy can be sufficiently improved.

また、この基板検査装置1および検査方法によれば、抵抗値R1〜R4の相互の比率p1〜p4のすべてが基準範囲A内であることを条件として判定処理を実行することにより、比率p1〜p4を算出し、比率p1〜p4と基準範囲Aとを比較するだけの簡易な処理で導体パターン102とビア103との接続状態の良否を確実かつ高精度に判定することができる。 Further, according to the substrate inspection device 1 and the inspection method, the ratios p1 to p1 are executed by executing the determination process on the condition that all of the mutual ratios p1 to p4 of the resistance values R1 to R4 are within the reference range A. The quality of the connection state between the conductor pattern 102 and the via 103 can be reliably and highly accurately determined by a simple process of calculating p4 and comparing the ratios p1 to p4 with the reference range A.

また、この基板検査装置1および検査方法では、切替処理において、第1から第4の状態をこの順序で切り替える。この場合、例えば、第3,第4の状態への切り替えを第1,第2の状態への切り替え以前に実行する構成および方法、つまり、大きい電流値の検査用信号S2を供給した後に小さい電流値の検査用信号S1を供給する構成および方法を採用することもできる。ただし、この構成および方法では、検査用信号S2を供給した時点で、導体パターン102およびビア103の抵抗値がしばらくの間小さい状態に維持され(つまり、抵抗値R1〜R4がすべて小さい値となり)、導体パターン102とビア103との接続状態が電流値依存性不良であるとしても、接続状態が良好と誤判定されるおそれがある。これに対して、この基板検査装置1および検査方法によれば、第1から第4の状態をこの順序で切り替えることにより、このような誤判定を防止して、電流値依存性不良を正しく判定することができる。 Further, in the substrate inspection device 1 and the inspection method, the first to fourth states are switched in this order in the switching process. In this case, for example, a configuration and method in which switching to the third and fourth states is executed before switching to the first and second states, that is, a small current after supplying the inspection signal S2 having a large current value. A configuration and method for supplying the value inspection signal S1 can also be adopted. However, in this configuration and method, the resistance values of the conductor pattern 102 and the via 103 are maintained in a small state for a while when the inspection signal S2 is supplied (that is, the resistance values R1 to R4 are all small values). Even if the connection state between the conductor pattern 102 and the via 103 is poorly dependent on the current value, it may be erroneously determined that the connection state is good. On the other hand, according to the substrate inspection device 1 and the inspection method, by switching the first to fourth states in this order, such an erroneous determination is prevented and the current value dependence defect is correctly determined. can do.

また、この基板検査装置1および検査方法では、抵抗値R1が絶縁状態を示す絶縁抵抗値Ri未満で抵抗値R2が絶縁抵抗値Ri以上のとき、および抵抗値R2が絶縁抵抗値Ri未満で抵抗値R1が絶縁抵抗値Ri以上のときのいずれかのときに、導体パターン102およびビア103の接続状態を、極性の相違によって抵抗値が異なる極性依存性不良と判定する。このため、この基板検査装置1および検査方法によれば、接続状態の良否を判定するための基準値を用いることなく、導体パターン102およびビア103が絶縁状態のときに測定される一般的な絶縁抵抗値Riを用いて極性依存性不良を確実に判定することができる。 Further, in the substrate inspection device 1 and the inspection method, when the resistance value R1 is less than the insulation resistance value Ri indicating the insulation state and the resistance value R2 is the insulation resistance value Ri or more, and when the resistance value R2 is less than the insulation resistance value Ri, the resistance When the value R1 is equal to or higher than the insulation resistance value Ri, the connection state of the conductor pattern 102 and the via 103 is determined to be a polarity dependence defect in which the resistance value differs depending on the polarity. Therefore, according to the substrate inspection device 1 and the inspection method, general insulation measured when the conductor pattern 102 and the via 103 are in an insulated state without using a reference value for determining the quality of the connected state. The resistance value Ri can be used to reliably determine the polarity dependence defect.

また、この基板検査装置1および検査方法では、抵抗値R1と抵抗値R2との比率p1が基準範囲A内で、かつ抵抗値R2と抵抗値R3との比率p2が基準範囲A外のときに、導体パターン102およびビア103の接続状態を、電流値の相違によって抵抗値が異なる電流値依存性不良と判定する。このため、この基板検査装置1および検査方法によれば、接続状態の良否を判定するための基準値を用いることなく、比率p1,p2と基準範囲Aとに基づいて電流値依存性不良を確実に判定することができる。 Further, in the substrate inspection device 1 and the inspection method, when the ratio p1 of the resistance value R1 and the resistance value R2 is within the reference range A and the ratio p2 of the resistance value R2 and the resistance value R3 is outside the reference range A. , The connection state of the conductor pattern 102 and the via 103 is determined to be a current value dependence defect in which the resistance value differs depending on the difference in the current value. Therefore, according to the substrate inspection device 1 and the inspection method, the current value dependence defect is ensured based on the ratios p1 and p2 and the reference range A without using the reference value for determining the quality of the connection state. Can be determined.

なお、基板検査装置1および検査方法は、上記の構成および方法に限定されない。例えば、抵抗値R1〜R4の相互の比率は、上記した比率p1〜p4(p1=R1/R2,p2=R2/R3,p3=R3/R4,p4=R4/R1)に限定されず、抵抗値R1〜R4の中の2つの組み合わせを変更した他の比率を採用することもできる。 The substrate inspection device 1 and the inspection method are not limited to the above configurations and methods. For example, the mutual ratio of the resistance values R1 to R4 is not limited to the above-mentioned ratios p1 to p4 (p1 = R1 / R2, p2 = R2 / R3, p3 = R3 / R4, p4 = R4 / R1). Other ratios in which the combination of the two values R1 to R4 are changed can also be adopted.

また、抵抗値R1〜R4の相互の比率のすべてが基準範囲A内であることを条件として判定処理を実行する構成および方法について上記したが、他の条件を採用することもできる。例えば、抵抗値R1〜R4の相互の差分値が基準範囲内であることを条件として判定処理を実行する構成および方法を採用することもできる。 Further, although the configuration and method for executing the determination process on the condition that all the mutual ratios of the resistance values R1 to R4 are within the reference range A are described above, other conditions can also be adopted. For example, a configuration and a method of executing the determination process on the condition that the mutual difference values of the resistance values R1 to R4 are within the reference range can be adopted.

また、基板本体101の一面101aおよび他面101bにそれぞれ形成された2つの導体パターン102a,102bとビア103との接続状態の良否をこの基板検査装置1および検査方法を用いて検査する例について上記したが、図5に示すように、基板本体101の内層101cに導体パターン102cが形成され、3つの導体パターン102a,102b,102cが2つのビア103a,103bで接続された多層基板200を検査対象として、導体パターン102a,102b,102cとビア103a,103bとの接続状態の良否をこの基板検査装置1および検査方法を用いて判定することもできる。また、4つ以上の導体パターンが3つ以上のビアで接続された多層基板を検査対象とすることもできる。 Further, the above is an example of inspecting the quality of the connection state between the two conductor patterns 102a and 102b formed on one surface 101a and the other surface 101b of the substrate body 101 and the via 103 by using the substrate inspection device 1 and the inspection method. However, as shown in FIG. 5, the multilayer board 200 in which the conductor pattern 102c is formed in the inner layer 101c of the substrate body 101 and the three conductor patterns 102a, 102b, 102c are connected by the two vias 103a, 103b is inspected. Therefore, the quality of the connection state between the conductor patterns 102a, 102b, 102c and the vias 103a, 103b can be determined by using the substrate inspection device 1 and the inspection method. It is also possible to inspect a multilayer substrate in which four or more conductor patterns are connected by three or more vias.

また、基板100や多層基板200に形成された導体パターン102とビア103との接続状態の良否を判定だけでなく、基板100に実装された電子部品の端子と導体パターン102との半田付け部分の接続状態の良否(プアコンタクト不良)の判定にこの基板検査装置1および検査方法を用いることもできる。 Further, not only the quality of the connection state between the conductor pattern 102 formed on the substrate 100 or the multilayer substrate 200 and the via 103 is determined, but also the soldered portion between the terminal of the electronic component mounted on the substrate 100 and the conductor pattern 102. The substrate inspection device 1 and the inspection method can also be used to determine whether the connection state is good or bad (poor contact failure).

また、上記した第1の状態および第2の状態における検査用信号S1の極性を上記した極性とは逆の極性にしてもよいし、上記した第3の状態および第4の状態における検査用信号S2の極性を上記した極性とは逆の極性にしてもよい。 Further, the polarity of the inspection signal S1 in the first state and the second state described above may be opposite to the polarity described above, or the inspection signal in the third state and the fourth state described above may be used. The polarity of S2 may be opposite to the above-mentioned polarity.

1 基板検査装置
3 信号出力部
4 測定部
7 処理部
100 基板
102a,102b,102c 導体パターン
103,103a,103b ビア
200 多層基板
A 基準範囲
I1,I2 電流値
R1〜R4 抵抗値
Ri 絶縁抵抗値
S1,S2 検査用信号
V1,V2 電圧値
1 Substrate inspection device 3 Signal output unit 4 Measuring unit 7 Processing unit 100 Substrate 102a, 102b, 102c Conductor pattern 103, 103a, 103b Via 200 Multilayer board A Reference range I1, I2 Current value R1 to R4 Resistance value Ri Insulation resistance value S1 , S2 Inspection signal V1, V2 Voltage value

Claims (6)

互いに接続される複数の導体に検査用信号が供給されている状態で当該各導体間の抵抗値を測定する測定部と、当該測定部によって測定された前記抵抗値に基づいて前記各導体同士の接続状態を検査する検査部とを備えた検査装置であって、
電流値が第1電流値に規定され電圧値の上限値が第1電圧値に規定された前記検査用信号としての第1の検査用信号を第1極性および当該第1極性を反転した第2極性で切り替えて出力すると共に、電流値が前記第1電流値よりも大きい第2電流値に規定され電圧値の上限値が前記第1電圧値よりも大きい第2電圧値に規定された前記検査用信号としての第2の検査用信号を前記第1極性および前記第2極性で切り替えて出力可能な信号出力部と、前記信号出力部を制御する制御部とを備え、
前記制御部は、前記信号出力部を制御して、前記第1の検査用信号を前記第1極性および前記第2極性のいずれか一方の極性で出力させて前記各導体に供給させる第1の状態と、前記第1の検査用信号を前記第1極性および前記第2極性の他方の極性で出力させて前記各導体に供給させる第2の状態と、前記第2の検査用信号を前記第1極性および前記第2極性のいずれか一方の極性で出力させて前記各導体に供給させる第3の状態と、前記第2の検査用信号を前記第1極性および前記第2極性の他方の極性で出力させて前記各導体に供給させる第4の状態とを切り替える切替処理を実行し、
前記検査部は、前記第1の状態で前記測定部によって測定された前記抵抗値としての第1の抵抗値、前記第2の状態で前記測定部によって測定された前記抵抗値としての第2の抵抗値、前記第3の状態で前記測定部によって測定された前記抵抗値としての第3の抵抗値、および前記第4の状態で前記測定部によって測定された前記抵抗値としての第4の抵抗値の相互の関係が予め決められた条件を満たしかつ当該各抵抗値のすべてが絶縁状態を示す値未満のときに前記各導体同士の接続状態を良好と判定し、前記第1から第4の抵抗値の相互の関係が前記条件を満たさないときおよび当該各抵抗値の1つ以上が前記絶縁状態を示す値以上のときの少なくとも一方のときに前記各導体同士の接続状態を不良と判定する判定処理を実行する検査装置。
A measuring unit that measures the resistance value between the conductors while the inspection signal is supplied to a plurality of conductors connected to each other, and the conductors based on the resistance value measured by the measuring unit. An inspection device equipped with an inspection unit that inspects the connection status.
The first inspection signal as the inspection signal whose current value is defined by the first current value and the upper limit of the voltage value is defined by the first voltage value is the first polarity and the second polarity is inverted. The inspection is performed by switching the output according to the polarity, and the current value is defined by the second current value larger than the first current value, and the upper limit of the voltage value is defined by the second voltage value larger than the first voltage value. A signal output unit capable of switching between the first polarity and the second polarity to output a second inspection signal as a signal for use and a control unit for controlling the signal output unit are provided.
The control unit controls the signal output unit to output the first inspection signal in either the first polarity or the second polarity and supply the first inspection signal to the respective conductors. The state, the second state in which the first inspection signal is output in the other polarities of the first polarity and the second polarity and supplied to the respective conductors, and the second inspection signal is the second. A third state in which one of the one polarity and the second polarity is output and supplied to each conductor, and the second inspection signal is sent to the other polarity of the first polarity and the second polarity. The switching process of switching between the fourth state of outputting and supplying to each conductor is executed.
The inspection unit has a first resistance value as the resistance value measured by the measurement unit in the first state, and a second resistance value as the resistance value measured by the measurement unit in the second state. The resistance value , the third resistance value as the resistance value measured by the measuring unit in the third state , and the fourth resistance as the resistance value measured by the measuring unit in the fourth state. When the mutual relationship between the values satisfies a predetermined condition and all of the resistance values are less than the values indicating the insulation state, the connection state between the conductors is judged to be good, and the first to fourth values are determined. When the mutual relationship between the resistance values does not satisfy the above conditions and at least one of the resistance values is at least one of the values indicating the insulation state, the connection state between the conductors is determined to be defective. An inspection device that executes a judgment process.
前記検査部は、前記第1から第4の抵抗値の相互の比率のすべてが予め決められた基準範囲内であることを前記条件として前記判定処理を実行する請求項1記載の検査装置。 The inspection device according to claim 1, wherein the inspection unit executes the determination process on the condition that all of the mutual ratios of the first to fourth resistance values are within a predetermined reference range. 前記制御部は、前記切替処理において、前記第1の状態、前記第2の状態、前記第3の状態、および前記第4の状態をこの順序で切り替える請求項1または2記載の検査装置。 The inspection device according to claim 1 or 2, wherein the control unit switches the first state, the second state, the third state, and the fourth state in this order in the switching process. 前記検査部は、前記第1の抵抗値が前記絶縁状態を示す値未満で前記第2の抵抗値が当該絶縁状態を示す値以上のとき、および前記第2の抵抗値が前記絶縁状態を示す値未満で前記第1の抵抗値が当該絶縁状態を示す値以上のときのいずれかのときに、前記各導体同士の接続状態を、極性の相違によって抵抗値が異なる極性依存性不良と判定する請求項3記載の検査装置。 In the inspection unit, when the first resistance value is less than the value indicating the insulating state and the second resistance value is equal to or more than the value indicating the insulating state, and the second resistance value indicates the insulating state. When the value is less than the value and the first resistance value is equal to or more than the value indicating the insulation state, the connection state between the conductors is determined to be a polarity dependence defect in which the resistance value differs depending on the polarity. The inspection device according to claim 3. 前記検査部は、前記第1の抵抗値と前記第2の抵抗値との比率が前記基準範囲内で、かつ前記第1の抵抗値と前記第3の抵抗値との比率または前記第2の抵抗値と前記第3の抵抗値との比率が前記基準範囲外のときに、前記各導体同士の接続状態を、電流値の相違によって抵抗値が異なる電流値依存性不良と判定する請求項3または4記載の検査装置。 In the inspection unit, the ratio of the first resistance value to the second resistance value is within the reference range, and the ratio of the first resistance value to the third resistance value or the second resistance value. 3. Claim 3 in which when the ratio of the resistance value to the third resistance value is out of the reference range, the connection state between the conductors is determined to be a current value dependence defect in which the resistance value differs depending on the difference in the current value. Or the inspection device according to 4. 互いに接続される複数の導体に検査用信号を供給している状態で当該各導体間の抵抗値を測定し、当該測定した抵抗値に基づいて前記各導体同士の接続状態を検査する検査方法であって、
電流値が第1電流値に規定され電圧値の上限値が第1電圧値に規定された前記検査用信号としての第1の検査用信号を第1極性および当該第1極性を反転した第2極性のいずれか一方の極性で出力して前記各導体に供給する第1の状態と、前記第1の検査用信号を前記第1極性および前記第2極性の他方の極性で出力して前記各導体に供給する第2の状態と、電流値が前記第1電流値よりも大きい第2電流値に規定され電圧値の上限値が前記第1電圧値よりも大きい第2電圧値に規定された前記検査用信号としての第2の検査用信号を前記第1極性および前記第2極性のいずれか一方の極性で出力して前記各導体に供給する第3の状態と、前記第2の検査用信号を前記第1極性および前記第2極性の他方の極性で出力して前記各導体に供給する第4の状態とを切り替える切替処理を実行し、
前記第1の状態で測定した前記抵抗値としての第1の抵抗値、前記第2の状態で測定した前記抵抗値としての第2の抵抗値、前記第3の状態で測定した前記抵抗値としての第3の抵抗値、および前記第4の状態で測定した前記抵抗値としての第4の抵抗値の相互の関係が予め決められた条件を満たしかつ当該抵抗値のすべてが絶縁状態を示す値未満のときに前記各導体同士の接続状態を良好と判定し、前記第1から第4の抵抗値の相互の関係が前記条件を満たさないときおよび当該各抵抗値の1つ以上が前記絶縁状態を示す値以上のときの少なくとも一方のときに前記各導体同士の接続状態を不良と判定する判定処理を実行する検査方法。
An inspection method in which the resistance value between the conductors is measured while the inspection signals are supplied to a plurality of conductors connected to each other, and the connection state between the conductors is inspected based on the measured resistance value. There,
The first inspection signal as the inspection signal whose current value is defined by the first current value and the upper limit of the voltage value is defined by the first voltage value is the first polarity and the second polarity is inverted. The first state in which one of the polarities is output and supplied to the respective conductors, and the first inspection signal is output in the other polarity of the first polarity and the second polarity. The second state of supply to the conductor and the second current value whose current value is larger than the first current value are defined, and the upper limit of the voltage value is defined by the second voltage value which is larger than the first voltage value. A third state in which a second inspection signal as the inspection signal is output in one of the first polarity and the second polarity and supplied to each conductor, and the second inspection signal. A switching process for switching between a fourth state in which a signal is output with the other polarity of the first polarity and the second polarity and supplied to the respective conductors is executed.
First resistance value as the resistance value measured in the first state, the second resistance value as said resistance value measured in the second state, the said resistance value measured in the third state The mutual relationship between the third resistance value and the fourth resistance value as the resistance value measured in the fourth state satisfies a predetermined condition, and all of the resistance values indicate an insulating state. When it is less than, it is judged that the connection state between the conductors is good, and when the mutual relationship between the first to fourth resistance values does not satisfy the above conditions and one or more of the resistance values is the insulating state. An inspection method for executing a determination process for determining the connection state between the conductors as defective when the value is equal to or greater than the value indicating.
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