JP6967745B2 - Board processing equipment - Google Patents

Description

The present invention relates to a substrate processing apparatus for processing a substrate in a processing chamber, and the present invention relates to a substrate processing apparatus including a transport lane for transporting the substrate into the processing chamber.

In the process of manufacturing a substrate, a substrate processing apparatus such as a plasma processing apparatus or a thin film forming apparatus (for example, a CVD apparatus or a sputtering apparatus) may be used for cleaning, etching, film forming, heat treatment, exposure, etc. of the substrate. .. For example, a plasma processing apparatus generally includes a processing chamber and a substrate mounting portion installed in the processing chamber. After the substrate is placed on the substrate mounting portion, the processing chamber is sealed, the process gas is supplied under reduced pressure, and high-frequency power is applied to the substrate mounting portion. As a result, plasma is generated in the processing chamber, and the substrate is plasma-processed.

During plasma processing, a plurality of substrates may be housed in the processing chamber and processed at the same time. At this time, in order to evenly process the plurality of boards, it is necessary to position each board at a predetermined position on the board mounting portion. For positioning the substrate, for example, a pair of guide members that support both ends of the substrate are used. However, the size of the substrate to be processed varies depending on the application and the like. Therefore, Patent Document 1 teaches that when a guide member as described above is used, one of the pair of guide members is detachable so that the pitch of the guide member can be adjusted freely. This makes it possible to easily position substrates of various sizes at predetermined positions in the processing chamber.

Japanese Unexamined Patent Publication No. 2006-228773

By the way, the plasma processing apparatus may include a transport lane for transporting the substrate from the outside of the processing chamber to the processing chamber. As described above, when a plurality of substrates are plasma-treated at the same time, a plurality of transport lanes are installed side by side so as to correspond to the guide member. The substrate conveyed in each transport lane is delivered to a guide member in the processing chamber and mounted on the substrate mounting portion.

In this case, when the size of the substrate to be processed changes, it becomes necessary to change both the pitch of the guide member in the processing chamber and the pitch of the transport lane. Therefore, the position adjustment work takes time and effort, and the productivity tends to decrease.

One aspect of the present invention is a substrate mounting portion on which a plurality of substrates can be mounted side by side along a second direction intersecting with a first direction which is a transport direction of the substrate, and a substrate mounting portion extending in the first direction. A processing chamber including a plurality of guide members for determining the positions of the plurality of the substrates on the substrate mounting portion, and a support member arranged outside the processing chamber to support the substrate are provided. It is used for at least one of carrying in the substrate to the substrate mounting portion and carrying out the substrate from the substrate mounting portion, and is supported by a plurality of transport lanes extending in the first direction and the support member. The substrate is provided with a transport mechanism for moving the substrate along the transport lane, and a plurality of the guide members and the plurality of transport lanes are arranged side by side along the second direction, and at least one of the above. A batch changing means for collectively changing the pitches P2 of a plurality of the transport lanes so that the guide member is movable along the second direction and further corresponds to the pitches P1 of the plurality of the guide members. The present invention relates to a substrate processing apparatus.

According to the present invention, the pitch of the transport lane can be changed at once. Therefore, the time and effort for adjusting the position of the transport lane is reduced, and the productivity is improved.

It is a perspective view which shows typically the appearance of the substrate processing apparatus which concerns on embodiment of this invention. It is a perspective view which shows typically the inside of the substrate processing apparatus. It is a perspective view which shows typically the appearance of the batch change means which concerns on embodiment of this invention. It is a top view of the substrate processing apparatus for demonstrating the usage of the batch change means. It is a top view of the substrate processing apparatus for demonstrating another use method of a batch change means. It is sectional drawing which cut the same substrate processing apparatus in the state which the closed space was formed, cut along the line AA of FIG.

The substrate processing apparatus of the present invention is arranged in a processing chamber provided with a substrate mounting portion and a plurality of guide members, and is supported by a transport lane provided with a supporting member for supporting the substrate and a supporting member. It is provided with a transport mechanism for moving the substrate along the transport lane, and a batch changing means for collectively changing the pitch P2 of the plurality of transport lanes so as to correspond to the pitch P1 of the plurality of guide members.

Hereinafter, the embodiment of the present invention will be described in more detail with reference to the drawings by exemplifying a substrate treatment device (hereinafter referred to as a plasma processing apparatus) that performs plasma processing. However, the invention is not limited to these embodiments and can include modifications and modifications of these embodiments. FIG. 1 is a perspective view schematically showing the appearance of the plasma processing apparatus according to the present embodiment. FIG. 2 is a perspective view schematically showing the inside of the plasma processing apparatus. FIG. 3 is a perspective view schematically showing the appearance of the batch changing means according to the present embodiment.

The plasma processing apparatus 100 includes a processing chamber 130 and a plurality of transport lanes 140 for transporting the substrate 300 from the outside to the inside of the processing chamber 130.
The processing chamber 130 is a base having a ceiling portion and a box-shaped lid 120 having a side wall extending from the periphery of the ceiling portion, and a substrate 111 (see FIG. 5) that supports the substrate mounting portion 112 and the substrate mounting portion 112. It is equipped with 110. The closed space S is formed by the end surface of the side wall of the lid 120 and the peripheral edge of the base 110 being in close contact with each other.

A plurality of guide members (hereinafter referred to as internal guides 118) for determining the positions of the substrate 300 on the substrate mounting portion 112 are arranged on the base 110. The internal guide 118 is arranged on the board mounting portion 112, and the upper part of the board mounting portion 112 is divided into a plurality of regions. As a result, the plurality of substrates 300 are arranged at predetermined positions in the processing chamber 130. In FIG. 2, six internal guides 118 divide the upper part of the substrate mounting portion 112 into three regions. The substrate 300 is positioned by sandwiching both ends thereof with a pair of internal guides 118. Therefore, in this case, three substrates can be plasma-processed at the same time. Further, the substrate 300 moves on the substrate mounting portion 112 while being guided by the pair of internal guides 118.

The plurality of internal guides 118 have a direction (for example, a vertical direction; hereinafter, a vertical direction) in which the longitudinal direction L1 intersects the first direction D so as to follow the transport direction of the substrate 300 (hereinafter referred to as the first direction D). It is arranged along the second direction.). The internal guide 118 is a long body, but its length is not particularly limited. The length of the internal guide 118 may be the same as or shorter than the length in the direction along the first direction D. A guide surface is formed on each of the opposite side surfaces of the pair of internal guides 118. Both ends of the substrate 300 are positioned by the guide surfaces of the pair of internal guides 118.

The pitch P1 of the plurality of internal guides 118 can be changed according to the width (length along the second direction) of the substrate 300. As a result, even when the width of the substrate 300 is changed, the substrate 300 is positioned by the internal guide 118. The pitch P1 is a center line between a pair of internal guides 118 and a center line between a pair of internal guides 118 adjacent to the center line when the internal guides 118 are viewed from the normal direction of the main surface of the substrate mounting portion 112. The shortest distance (see FIG. 4A).

A plurality of transport lanes 140 are arranged outside the processing chamber 130 along the second direction so that the longitudinal direction L2 thereof is along the longitudinal direction L1 of the internal guide. The transport lane 140 is located at a position corresponding to the internal guide 118. As a result, the substrate 300 that has moved into the processing chamber 130 along the transport lane 140 is easily accommodated between the pair of internal guides 118 and placed at a predetermined position of the substrate mounting portion 112. Similarly, the substrate 300 in the processing chamber 130 is easily transferred from the internal guide 118 to the transport lane 140 and carried out from the processing chamber 130. These operations may be performed on a plurality of substrates 300 at the same time.

The transport lane 140 includes a support member 141 that supports the substrate 300. While being supported by the support member 141, the substrate 300 slides along the support member 141 by a transfer mechanism (not shown). The transport mechanism is, for example, arranged adjacent to the base 110 and includes a movable end effector in the longitudinal direction L2 of the transport lane 140. In the carry-in step, the end effector pushes the end surface of the substrate 300 supported by the support member 141 opposite to the processing chamber 130 toward the processing chamber 130, and mounts the substrate 300 on the substrate mounting portion 112. In the carry-out process, the end effector pushes the same end face of the board 300 mounted on the board mounting portion 112 to move the board 300 to the transport lane 140 arranged on the side opposite to the carry-in side.

The support member 141 is a pair of guide rails (141a and 141b; hereinafter, may be collectively referred to as an external guide rail 141) that support both ends of the substrate 300. A groove is formed on each of the opposite side surfaces of the pair of guide rails 141a and 141b. The substrate 300 is supported by its both ends being fitted into the grooves of the external guide rail 141. The guide rail 141a and the guide rail 141b constituting the transport lane 140 adjacent thereto may be integrated.

The shape of the external guide rail 141 is not limited to this. For example, the external guide rail 141 may have a simple rod shape having no groove, and the guide rails 141a and 141b may each have an L-shaped cross section. In this case, the substrate 300 is supported by an L-shaped horizontal plane. Further, the support member 141 may have a flat plate shape. In this case, the support member 141 supports one main surface of the substrate 300. Above all, the support member 141 is preferably a pair of guide rails that support both ends of the substrate 300 in that the substrate 300 can be stably supported even when the pitch P2 of the transport lane 140 is changed.

Further, the shape of the internal guide 118 is not limited to the above, and has the same variation as the external guide rail 141. Further, the internal guide 118 may be integrally held by a frame-shaped rail holder (not shown) arranged so as to surround the substrate mounting portion 112. In this case, the rail holder may be provided with an elevating mechanism that enables elevating and lowering between the lid 120 and the base 110 with respect to the substrate mounting portion 112 in conjunction with the elevating and lowering of the lid 120.

The plasma processing apparatus 100 includes a batch changing means 150 that collectively changes the pitch P2 of the plurality of transport lanes 140 so as to correspond to the pitch P1 of the internal guide 118. This reduces the time and effort required to adjust the position of the transport lane 140. In the illustrated example, the external guide rail 141 is moved so that the pitch P2 is the same as the pitch P1.

The batch changing means 150 is, for example, a pantograph type jig (hereinafter, referred to as a pantograph type jig 150) for connecting the support members 141 of a plurality of transport lanes 140 to each other as shown in FIG.

A pantograph is a shape in which adjacent rhombuses R are connected in one direction while sharing one vertex. In the pantograph type jig 150, for example, two rod-shaped bodies having a length of about two sides of a rhombus R are crossed at the center and rotatably screwed to obtain a cross member, and then a plurality of cross members are formed. It is obtained by rotatably connecting the ends. At one end of the pantograph type jig 150, two extension portions 151, each of which has two sides sharing one vertex of the rhombus R, are extended. The two extension portions 151 intersect. When the two extension portions 151 are moved so as to change the angle θ formed by the two extension portions 151, the plurality of rhombuses R of the pantograph type jig 150 are all deformed (expanded and contracted) in the same manner. For example, when the angle θ is reduced, the plurality of rhombuses R extend in the longitudinal direction of the pantograph type jig 150, and when the angle θ is increased, the plurality of rhombuses R are reduced in the longitudinal direction of the pantograph type jig 150. Although the pantograph type jig 150 is a long body, the maximum length in the longitudinal direction thereof is defined by the size and number of rhombuses R. Therefore, the pantograph type jig 150 is expanded and contracted in the longitudinal direction within a predetermined range.

In the present embodiment, the pitch P2 of the plurality of transport lanes 140 is changed collectively by utilizing the expansion and contraction of the rhombus R. At this time, the pantograph type jig 150 is used by being attached to the support member 141 of the transport lane 140.

In this case, the guide rail 141a and the guide rail 141b constituting the transport lane adjacent thereto are integrated into one external guide rail 141. Further, the external guide rail 141 at one end is fixed (hereinafter referred to as fixed guide rail 141F), and the other external guide rail 141 is movable (hereinafter referred to as movable guide rail 141M). Is preferable. At this time, the external guide rail 141 in which the guide rail 141a and the guide rail 141b constituting the transport lane 140 adjacent thereto are integrated corresponds to the movable guide rail 141M. By moving the movable guide rail 141M with the fixed guide rail 141F as a base point, the alignment with the plurality of internal guides 118 becomes easy.

Further, in this case, the two movable guide rails 141M can function as the transport lane 140. Therefore, the dead space that is not used for transporting the substrate 300 is reduced in the region (mounting region A1; see FIG. 4) corresponding to the region on which the substrate 300 of the substrate mounting portion 112 is mounted outside the processing chamber 130. .. Since the arrangement of the external guide rail 141 and the arrangement of the internal guide 118 correspond to each other, when the dead space outside the processing chamber 130 decreases, the dead space inside the processing chamber 130 (that is, the substrate mounting portion 112) also decreases. .. Therefore, the substrate 300 can be efficiently arranged and processed on the substrate mounting portion 112, and the productivity is further improved.

The pantograph type jig 150 may be always attached. Since the pantograph type jig 150 is arranged outside the processing chamber 130, there is no problem in processing the substrate 300 even if it is still mounted. However, the pantograph type jig 150 may be removable.

The pantograph type jig 150 and the plurality of support members 141 of each transport lane 140 are connected to each other at each center (hereinafter referred to as a fulcrum F) of the rod-shaped body fastened with screws, for example, by screws. At this time, the pantograph type jig 150 is connected to one support member 141 at one fulcrum F. However, there may be a fulcrum F that is not used for connecting the pantograph type jig 150 and the support member 141. Which fulcrum F is used for connection depends on the width of the substrate 300 (the length in the direction perpendicular to the first direction), the length of the rhombus R (the length of the diagonal line in the direction perpendicular to the first direction), and the like. Then, it may be set appropriately. For example, if the width of the substrate 300 is sufficiently larger than the maximum length of the rhombus R, the pantograph type jig 150 and the support member 141 are connected by using every other (or a plurality of) fulcrums F. May be good.

Hereinafter, the case where the support member 141 is a pair of guide rails that support both ends of the substrate 300 will be taken as an example, and the state in which the pitch P2 of the transport lane 140 is collectively changed by the pantograph type jig 150 will be shown in FIGS. 4A and 4A. This will be described with reference to FIG. 4B. 4A and 4B are top views of the plasma processing apparatus 100 for explaining how to use the pantograph type jig 150 (collective changing means). In FIGS. 4A and 4B, the lid 120 is omitted for convenience, and the substrate 300 is shown with hatching. Further, in FIGS. 4A and 4B, the pitch P1 of the plurality of internal guides 118 has already been changed to correspond to the width of the substrate 300.

When three substrates 300A are housed in the processing chamber 130 as shown in FIG. 4A, the extension portion 151 is moved so that the pitch P2 of the transport lane 140 corresponds to the pitch P1 of the internal guide 118 and is a guide. The shape of the rhombus R is adjusted so that the arrangement of the rail 141 and the internal guide 118 corresponds to each other. The pantograph type jig 150 and the guide rail 141 are connected by a fulcrum F. Therefore, in response to the deformation of the rhombus R, the movable guide rail (movable guide rail) 141M moves in the direction intersecting the first direction D with the fixed guide rail (fixed guide rail) 141F as a base point. As a result, the distance D between the pair of guide rails (141a and 141b) is changed collectively. In other words, the pitch P2 of all the transport lanes 140 is changed at once. The distance D is obtained as the shortest distance between the pair of guide rails 141a and 141b when the transport lane 140 is viewed from the normal direction of the main surface of the substrate 300 supported by the guide rails 141. The pitch P2 is a center line between the pair of guide rails 141a and 141b and a pair of guide rails 141a adjacent thereto when the transport lane 140 is viewed from the normal direction of the main surface of the substrate 300 supported by the guide rail 141. And it is obtained as the shortest distance from the center line between 141b.

Further, as shown in FIG. 4B, when two wide substrates 300B are housed in the processing chamber 130, it is necessary to widen the pitch P2 of the transport lane 140. Therefore, the extension portion 151 is moved so that the angle θ is smaller than that in the case of FIG. 4A. At this time, some unnecessary movable guide rails 141M are arranged in an area other than the mounting area A1 (evacuation area A2) beyond the mounting area A1.
In this way, by using the batch changing means 150, the pitches P2 of the plurality of transport lanes 140 can be changed collectively.

The internal guide 118 may also be provided with means (internal batch changing means) capable of collectively changing the pitch P1. Examples of the internal batch changing means include the same as the batch changing means for batch changing the pitch P2 of the transport lane 140 (for example, a pantograph type jig). When the pitch P1 between the pair of internal guides 118 is changed collectively by the pantograph type jig, it is preferable that the configuration of the internal guides 118 is the same as that of the external guide rails 141. In this case, the pantograph type jig is preferably removable from the viewpoint of the processing accuracy of the substrate 300.

Hereinafter, the plasma processing apparatus 100 according to the embodiment of the present invention will be specifically described with reference to FIG. FIG. 5 is a cross-sectional view of the plasma processing apparatus 100 in a state where the closed space S is formed, cut along the line AA of FIG.

The plasma processing apparatus 100 includes a processing chamber 130 including a base 110 and a lid 120. The lid 120 is a box type having a ceiling portion and a side wall extending from the periphery of the ceiling portion, and the end surface of the side wall of the lid 120 and the peripheral edge of the base 111 of the base 110 are in close contact with each other to seal the inside of the lid 120 in a box shape. Space S is formed.

The base 110 is provided with a substrate mounting portion 112 on a surface facing the lid 120. The substrate mounting portion 112 is supported by the substrate 111. The substrate mounting portion 112 is connected to the power supply portion 400, while is insulated from the substrate 111. By applying high frequency power from the power supply unit 400 to the substrate mounting unit 112 in the presence of the process gas, plasma is generated in the enclosed space S. The lid 120 has a function as a counter electrode of the substrate mounting portion 112. The power supply unit 400 is composed of, for example, a high frequency power supply 401 and an automatic matching device 402. The automatic matching device 402 has an effect of preventing interference between high-frequency marching waves and reflected waves flowing between the substrate mounting portion 112 and the high-frequency power supply 401.

The inside of the closed space S can be maintained in a decompressed atmosphere through the exhaust port 117 (see FIG. 2) communicating with the closed space S. The exhaust port 117 communicates with a vacuum suction means (not shown). The vacuum suction means includes a vacuum pump, an exhaust pipe, a pressure adjusting valve, and the like. A sealing member 116 is provided between the peripheral edge of the substrate 111 and the end surface of the side wall of the lid 120 to enhance the airtightness in the sealed space S. Although not shown, the plasma processing apparatus 100 includes a gas supply means for introducing a process gas as a plasma raw material into the closed space S. The gas supply means includes a gas cylinder for supplying a process gas such as argon, oxygen, and nitrogen, a pipe for introducing the process gas into the closed space S, and the like.

When the substrate 300 is carried into the processing chamber 130 and carried out of the processing chamber 130, the lid 120 is raised to separate it from the base 110. On the other hand, when plasma-treating the substrate 300, as shown in FIG. 5, the lid 120 is lowered so that the end surface of the side wall of the lid 120 and the peripheral edge of the substrate 111 are brought into close contact with each other. The raising and lowering of the lid 120 is controlled by a predetermined drive source (not shown).

The substrate mounting portion 112 is supported by the substrate 111 via the first insulating member 114. The substrate mounting portion 112 is composed of an upper electrode body 112a facing the substrate 300 during plasma treatment and a lower electrode body 112b facing the substrate 111 via the first insulating member 114. Both the upper electrode body 112a and the lower electrode body 112b are made of a conductive material (conductor). A frame-shaped second insulating member 115 is attached to the outer edge portion of the substrate mounting portion 112 so as to be sandwiched between the upper electrode body 112a and the lower electrode body 112b.

A plurality of internal guides 118 are arranged on the board mounting portion 112. The internal guide 118 positions the substrate 300 in the processing chamber 130. Further, when the substrate 300 is carried in and out of the processing chamber 130, the substrate 300 moves on the substrate mounting portion 112 while being guided by the internal guide 118.

Hereinafter, a method of cleaning the substrate 300 using the plasma processing apparatus 100 will be described.
First, the pitch P2 and the arrangement of the plurality of transport lanes 140 are adjusted so as to correspond to the pitch P1 and the arrangement of the plurality of internal guides 118. The pitch P2 and the arrangement of the transport lane 140 are adjusted by being changed collectively by using, for example, a pantograph type jig 150.

Subsequently, the plurality of substrates 300 are supported by the support member 141 of each transport lane 140. The end face of the substrate 300 is pushed in the direction of the processing chamber 130 by the end effector of the transport mechanism. At this time, the processing chamber 130 is in an open state, and the substrate 300 that has entered the processing chamber 130 is housed in the pair of internal guides 118 from the transport lane 140. While being guided by the internal guide 118, the substrate 300 is conveyed to a position facing the substrate mounting portion 112 and mounted on the substrate mounting portion 112.

Next, the lid 120 is lowered to seal the processing chamber 130, and a closed space S is formed. After that, the air in the closed space S is exhausted by using a suction means, and when a predetermined depressurized state is reached, for example, a process gas such as argon is introduced into the closed space S from the gas supply means mounted inside the base 110. Will be introduced. When the inside of the closed space S reaches a predetermined pressure, high frequency power is applied between the substrate mounting portion 112 and the lid 120 by the power supply unit 400. As a result, the process gas in the closed space S is turned into plasma. As a result, the surface of the substrate 300 is exposed to plasma and the surface of the substrate 300 is cleaned.

When the cleaning of the substrate 300 with plasma is completed, the inside of the enclosed space S is opened to the atmosphere, and the decompression state is released. Next, the lid 120 is raised to connect the internal guide 118 and the transport lane 140. Next, the end surface of the substrate 300 guided by the internal guide 118 is pushed by the end effector, the substrate 300 is moved to the transport lane 140 arranged on the side opposite to the carry-in side, and the substrate 300 is carried out of the processing chamber 130. ..

In the above embodiment, the case where the substrate 300 is cleaned by plasma using the plasma processing apparatus 100 has been described, but other processing (for example, etching, film formation, heat treatment, exposure, etc.) or inspection of the substrate 300 has been described. , Evaluation, etc. are also performed according to the above method.

The substrate processing apparatus according to the present invention is suitable for transporting a plurality of substrates into a processing chamber by a plurality of transport lanes.

100: Plasma processing equipment (board processing equipment)
110: Base 111: Base 112: Board mounting part 112a: Upper electrode body 112b: Lower electrode body 114: First insulating member 115: Second insulating member 116: Seal member 117: Exhaust port 118: Guide member (internal guide)
120: Cover 130: Processing chamber 140: External rail 141: Support member (external guide rail)
141a, 141b: Guide rail 141F: Fixed guide rail 141M: Movable guide rail 150: Batch changing means (pantograph type jig)
300: Board 400: Power supply unit 401: High frequency power supply 402: Automatic matcher

Claims (2)

A board mounting portion on which a plurality of boards can be placed side by side along a second direction intersecting with a first direction, which is a transport direction of the boards, and a board mounting portion extending in the first direction of the plurality of boards. A processing chamber provided with a plurality of guide members for determining the position on the substrate mounting portion, and
It is arranged outside the processing chamber and is provided with a support member for supporting the substrate, and is used for at least one of carrying the substrate into the substrate mounting portion and carrying out the substrate from the substrate mounting portion. A plurality of transport lanes extending in the first direction,
A transport mechanism for moving the substrate supported by the support member along the transport lane is provided.
The plurality of guide members and the plurality of transport lanes are arranged side by side along the second direction.
At least one of the guide members is movable along the second direction.
Furthermore, so as to correspond to the pitch P1 of the plurality of the guide member, a pitch P2 of the plurality of the transport lane, e Bei bulk changing means for changing at once,
A substrate processing apparatus in which the batch changing means is a pantograph-type jig that connects the support members of the plurality of transport lanes to each other. The support member is a pair of guide rails that support both ends of the substrate.
The substrate processing apparatus according to claim 1, wherein the batch changing means collectively changes the distance between the pair of guide rails.

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