JP6975601B2 - Board holding member and board holding method - Google Patents

Description

The present invention relates to a substrate holding member used for holding a substrate such as a semiconductor wafer.

In a semiconductor manufacturing apparatus, there has been proposed a substrate holding member in which a large number of protrusions (pins) provided so as to project from a plate-shaped substrate are arranged at small intervals in order to hold the substrate. (See Patent Document 1). The pressure in the narrow space sandwiched between the substrate and the substrate is adjusted to suppress the flatness of the substrate during adsorption, and the substrate is large in order to suppress the adhesion of particles to the substrate due to the winding of particles from the narrow space. A technique for providing an opening has been proposed (see Patent Document 2). A technique in which a suction hole is provided in a pin that supports the substrate in order to locally and scatterly vacuum-suck the substrate is disclosed (see Patent Documents 2 and 3).

Japanese Patent No. 2574818 Japanese Unexamined Patent Publication No. 2015-050300 Japanese Unexamined Patent Publication No. 2001-127145

However, in recent years, semiconductors have become finer and more dense, and when particles intervene between the substrates when the substrate is vacuum-adsorbed and held, local swelling of the substrate occurs, for example. When exposure is performed, the exposure is out of focus, the exposure pattern is blurred, the circuit pattern formed on the substrate is blurred, and defects such as a short circuit of the circuit pattern formed on the substrate occur. In order to reduce such defects, there is a demand to reduce the contact area between the substrate and the substrate.

Generally, in order to reduce the contact area, it is considered to reduce the number of outer peripheral ribs having dimensions close to the diameter of the substrate in contact with the substrate and the number of pins arranged on the entire surface of the substrate.

By providing suction holes in the pin itself and arranging them on the entire surface of the substrate in a scattered manner, the outer peripheral ribs can be omitted, but there are some problems. That is, in order to maintain the flatness of the substrate, it is necessary to arrange a considerable number of pins with suction holes on the entire surface at a pitch of a certain level or less, and the contact area between the substrate and the substrate cannot be suppressed. When a pressure control device is connected to the space between the substrate and the substrate to maintain the flatness of the substrate, an air flow is generated in the narrow space between the substrate and the substrate, and particles adhere to the substrate due to winding up of the particles. When a large opening is provided in the substrate in order to suppress the winding adhesion of particles, the winding adhesion is suppressed, but if the opening is made too large, the bending of the substrate becomes unacceptable.

Therefore, an object of the present invention is to provide a substrate holding member and a substrate holding method capable of improving the flatness of the substrate while reducing the contact area of the substrate with the substrate when vacuum suctioned and held. And.

In the present invention, a plate-shaped substrate having a main surface, one or more first flow paths provided inside the substrate, and the one or more first flow paths are opened to the main surface. The present invention relates to a substrate holding member including a plurality of first openings and a plurality of protrusions erected on the main surface to support the substrate.

In the present invention, a plate-shaped substrate having a main surface, one or more first flow paths provided inside the substrate, and the one or more first flow paths are opened to the main surface. A plurality of first openings, a plurality of protrusions erected on the main surface to support the substrate, one or more second flow paths provided inside the substrate, and the one or more. 2 . And a substrate holding member having one or more convex portions arranged in a predetermined positional relationship, and at least a part of the main surface is formed by a plurality of regularly arranged unit regions. The present invention relates to a method of holding a substrate using.

The substrate holding member of the present invention has one or more second flow paths provided inside the substrate, and a plurality of second openings formed by opening the one or more second flow paths to the main surface. And, the main surface is a unit region in which one or more of the first openings, one or more of the second openings, and one or more of the protrusions are arranged in a predetermined positional relationship. Between the substrate and the main surface, wherein at least a part of the main surface is formed by the plurality of regularly arranged unit regions, and is supported by at least a part of the plurality of convex portions. In response to the fact that the gas existing in the space is discharged to the first flow path through the first opening, the gas is introduced into the space from the second flow path through the second opening. It is characterized by being configured in.

The substrate holding method of the present invention comprises a step of supporting the substrate by at least a part of the plurality of convex portions by placing the substrate on the substrate, and the substrate and the main surface of the substrate. The gas existing in the space between them is discharged to the first flow path which constitutes a part of the plurality of flow paths through the plurality of first openings which form a part of the plurality of openings, and is also discharged. , A step of introducing a gas into the space from a second flow path that constitutes a part of the plurality of flow paths through a plurality of second openings different from the first opening among the plurality of openings. And is characterized by including.

According to the substrate holding member and the substrate holding method of the present invention, the substrate is placed on the substrate and the substrate is supported by at least a part of the plurality of convex portions. In this state, air is discharged from the space sandwiched between the back surface of the substrate and the main surface of the substrate to the first flow path through the first opening, so that the space is depressurized. The substrate is attracted to the main surface of the substrate as a whole by the attractive force derived from the reduced pressure and is supported by the plurality of protrusions.

At this time, the contact area between the substrate and the substrate can be reduced by the amount that the substrate does not contact the substrate in the region corresponding to the second opening. On the other hand, the equilibrium state of the distribution mode of the attractive force received by the substrate in the region corresponding to the first opening, the drag received from the convex portion, and the relaxed attractive force received in the region corresponding to the second opening is regularly secured. Therefore, a uniform flatness of the substrate can be realized as a whole. In addition, air is introduced from the second flow path through the second opening into the space sandwiched by the back surface of the substrate and the main surface of the substrate, and the attractive force received in the region corresponding to the second opening of the substrate is reduced. Therefore, the situation of locally bending in the region is avoided and the flatness of the substrate is maintained.

It is preferable that each of the plurality of first openings, the plurality of second openings, and the plurality of protrusions are regularly arranged on the main surface.

According to the substrate holding member having the configuration, the distribution mode of the attractive force received by the substrate in the region corresponding to the first opening, the drag received from the convex portion, and the relaxed attractive force received in the region corresponding to the second opening. Since regularity is ensured, an overall uniform flatness of the substrate can be achieved.

It is preferable that the substrate holding member of the present invention has a convex wall erected at a height lower than the convex portion on the main surface between the first opening and the second opening.

According to the substrate holding member having the above configuration, the gas flowing from the second flow path through the second opening into the space sandwiched between the main surface of the substrate and the back surface of the substrate enters the first flow path through the first opening. When flowing out, the velocity is locally increased by flowing through the gap between the convex wall and the back surface of the substrate. Therefore, an attractive force or Bernoulli force toward the substrate acts on the region corresponding to the gap of the substrate. Therefore, the contact area between the substrate and the substrate is reduced, and the flatness of the substrate is maintained. The substrate can be held.

The convex wall is preferably an annular wall provided so as to surround the circumference of the second opening.

According to the substrate holding member having this configuration, the attractive force acting on the region corresponding to the second opening in the substrate can be made uniform, so that the overall flatness of the substrate can be improved.

The height difference between the upper end surface of the convex portion and the main surface as the next lowest surface after the upper end surface is preferably 0.5 to 5 μm.

According to the substrate holding member having this configuration, the equilibrium state of the attractive force received by the substrate in the region corresponding to the first opening, the drag received from the convex portion, and the relaxed attractive force received in the region corresponding to the second opening is obtained. Since it is ensured, a uniform flatness of the substrate can be realized as a whole.

The height difference between the upper end surface of the convex portion and the upper end surface of the convex wall as the next lowest surface after the upper end surface is preferably 0.5 to 5 μm.

According to the substrate holding member having the above configuration, the substrate corresponds to the attractive force received in the region corresponding to the first opening, the drag received from the convex portion, the attractive force received in the region corresponding to the convex wall, and the second opening. Since the equilibrium state of the relaxed attractive force received in the region is ensured, an overall uniform flatness of the substrate can be realized.

It is preferable that the second flow path is connected to a pressure adjusting device that is open to the atmosphere or that adjusts the air pressure in the second flow path.

According to the substrate holding member having the above configuration, the strength of the relaxed attractive force acting on the region corresponding to the second opening of the substrate can be appropriately controlled from the viewpoint of ensuring the flatness of the substrate.

The breaking perspective view of a part of the substrate holding member as the 1st Embodiment of this invention. The cross-sectional view of a part of the substrate holding member as the 1st Embodiment of this invention. The top view of a part of the substrate holding member as the 1st Embodiment of this invention. The explanatory view about the function of the substrate holding member as the 1st Embodiment of this invention. The top view of a part of the substrate holding member as the 2nd Embodiment of this invention. The explanatory view about the function of the substrate holding member as the 2nd Embodiment of this invention.

(First Embodiment)
(composition)
The substrate holding member as the first embodiment of the present invention, which is partially shown in FIGS. 1, 2 and 3, is provided on a plate-shaped substrate 1 having a main surface 102 and inside the substrate 2. One or more first flow paths 21, a plurality of first openings 212 in which the first flow path 21 opens in the main surface 102, and a plurality of first channels erected on the main surface 102 to support the substrate W. A convex portion 11 of the above, one or more second flow paths 22 provided inside the substrate 1, and a plurality of second openings 222 in which the second flow path 22 opens to the main surface 102. ing. FIG. 2 is a cross-sectional view of the substrate holding member along the line AA of FIG.

The substrate 1 is made of a sintered body of ceramics such as SiC, AlN, and Al ₂ O _3. Each of the plurality of convex portions 11 has a columnar shape, a weight stand shape, a shape in which a plurality of pillars or weight bases are stacked in the axial direction, and is formed by cutting, blasting, laser processing, or a combination thereof. ..

The substrate holding member further includes a convex wall 12 erected at a height lower than the convex portion 11 on the main surface 102 between the first opening 212 and the second opening 222. The convex wall 12 is an annular wall provided so as to surround the circumference of the second opening 222. The convex wall 12 may be provided so as to intermittently surround the circumference of the second opening 222. The height difference between the upper end surface 112 of the convex portion 11 and the upper end surface 122 of the convex wall 12 as the next lowest surface after the upper end surface 112 is, for example, 0.5 μm or more and 5 μm or less.

The substrate holding member has a plurality of holes 20 provided on the back surface of the substrate 1 (see FIG. 2). The hole 20 may be omitted. The substrate holding member includes an annular convex portion 14 erected on the main surface 102 so as to extend in an annular shape along the peripheral edge of the substrate 1 (see FIG. 3). The height of the upper end surface of the annular convex portion 14 may be the same as the height of the upper end surface 112 of the plurality of convex portions 11, or may be lower than the height of the upper end surface 112 of the plurality of convex portions 11. The annular convex portion 14 may be omitted.

The first flow path 21 is connected to a vacuum suction device such as a vacuum pump, and the second flow path 22 is connected to the atmosphere or a pressure adjusting device having an opening degree adjusting valve or the like. The gas existing in the space between the substrate W supported by the plurality of convex portions 11 and the main surface 102 of the substrate 1 is exhausted to the first flow path 21 through the first opening 212, and the second opening. Gas is introduced into the space from the second flow path 22 via 222.

On the main surface 102 of the substrate 1, each of the plurality of first openings 212, the plurality of second openings 222, and the plurality of convex portions 11 is regularly, specifically, arranged in a regular triangular lattice pattern (. See Figure 3). For example, the pitch of the regular triangular lattice representing the arrangement mode of the plurality of first openings 212 is larger than the pitch of the regular triangular lattice representing the arrangement mode of the plurality of second openings 222. The pitch of the regular triangular lattice representing the arrangement mode of the plurality of first openings 212 is the same as the pitch of the regular triangular lattice representing the arrangement mode of the plurality of convex portions 11.

In the present embodiment, a plurality of unit regions S having a parallel quadrilateral shape including one first opening 212, four second openings 222, and one convex portion 111 coincide with each other on the short side and the long side. By being arranged in such a manner, a part (excluding the peripheral portion) of the main surface 102 is configured. Each of the four second openings 222 is arranged so as to form each vertex of a parallelogram similar to the unit region S, and one first opening 212 excludes the second opening 222 in the lower right corner 3. It is arranged at the center of gravity of a triangle having two second openings 222 as vertices, and one convex portion 11 is arranged at the lower right of the second opening 222 in the lower right corner and near the lower right corner of the unit region S. ing.

(function)
According to the substrate holding device as the first embodiment of the present invention having the above configuration, the substrate W is placed on the substrate 1 and the substrate W is supported by at least a part of the plurality of convex portions 11. In this state, air is discharged from the space sandwiched between the back surface of the substrate W and the main surface 102 of the substrate 1 to the first flow path 21 through the first opening 212, so that the space is depressurized (FIG. 4 / black). See the down arrow). The substrate W is attracted toward the main surface 102 of the substrate 1 as a whole by the attractive force derived from the reduced pressure, and is supported by the plurality of convex portions 11.

At this time, the contact area between the substrate W and the substrate 1 is reduced by the amount that the substrate W is not in contact with the substrate 1 in the region corresponding to the second opening 222 (see FIG. 2). On the other hand, air is introduced from the second flow path 22 through the second opening 222 into the space sandwiched by the back surface of the substrate W and the main surface 102 of the substrate 1 (see FIG. 4 / black arrow).

When the gas flowing from the second flow path 22 through the second opening 222 flows out to the first flow path 21 through the first opening 212 in the space sandwiched between the main surface 102 of the substrate 1 and the back surface of the substrate W. The velocity is locally increased by flowing through the gap between the convex wall 12 and the back surface of the substrate W. Therefore, an attractive force or Bernoulli force toward the main surface 102 of the substrate 1 acts on the region corresponding to the gap of the substrate W (see FIG. 4 / white down arrow). Here, when the attractive force or Bernoulli force toward the main surface 102 of the substrate 1 does not act on the substrate W, a local deflection that protrudes upward occurs in the region corresponding to the second opening 222 of the substrate W, and the substrate W occurs. Although the flatness of the W is lowered, the second opening 222 of the substrate W is reduced while reducing the contact area between the substrate W and the substrate 1 by the attractive force or Bernoulli force acting on the above-mentioned region of the substrate W. The substrate W can be held in a state of suppressing the occurrence of local bending in the region corresponding to the above and maintaining a high flatness.

Since each of the plurality of first openings 212, the plurality of second openings 222, and the plurality of protrusions 11 are regularly arranged on the main surface 102 of the substrate 1, the substrate W is placed in the first opening 212. Since the regularity of the distribution mode of the attractive force received in the corresponding region, the drag force received from the convex portion 11, and the relaxed attractive force received in the region corresponding to the second opening 222 is ensured, the substrate W as a whole is secured. Uniform flatness can be achieved.

(Example 1)
The substrate holding device of Example 1 was manufactured according to the first embodiment. Specifically, a plate-shaped SiC sintered body was processed to produce a substantially disk-shaped substrate 1 having a diameter of φ300 mm and a thickness of t6 mm. A plurality of circular first openings 212 having a diameter of φ5 mm were arranged so as to form a regular triangular lattice having a pitch of 40 mm. A plurality of circular second openings 222 having a diameter of φ13 mm were arranged so as to form a regular triangular lattice having a pitch of 20 mm. A plurality of substantially columnar convex portions 11 having a diameter of φ0.5 mm and a height of 100 μm were arranged so as to form a regular triangular lattice having a pitch of 40 mm. An annular convex wall 12 having an inner diameter of φ14 mm, a width of 2 mm, and a height of 97 μm was arranged around the second opening 222.

After the silicon wafer as the substrate W is placed on the substrate 1, the substrate W and the main surface 102 of the substrate 1 pass through the first flow path 21 in a state where the second flow path 22 communicates with the atmosphere. The sandwiched space was decompressed. In this state, the flatness of the substrate W was measured with a laser interferometer (GPI Hs manufactured by ZYGO). The measurement result is a PV value of 0.1 μm in a quadrangular region of the substrate W having a side of 20 mm and including a region corresponding to the second opening 222, and a PV value of 0.5 μm in the entire substrate W. It was confirmed that the substrate W had a sufficient flatness.

After that, the number of particles adhering to the back surface of the substrate W was measured with a particle counter (WA-10 manufactured by Topcon Corporation). The number of particles having a size of 0.4 μm or more was “26”. This is compared with the number of particles "412" of the substrate holding device of the comparative example in which a plurality of substantially cylindrical convex portions having a diameter of φ0.5 mm and a height of 100 μm are arranged in a regular triangular lattice pattern with a pitch of 3.5 mm. It was confirmed that the value was extremely small.

Further, the same evaluation was performed with the second flow path 22 connected to the pressure adjusting device, but the area of the substrate W that was a quadrangle with a side of 20 mm and corresponds to the second opening 222 was defined. The PV value of the included region was 0.08 μm, and the PV value of the entire substrate W was 0.4 μm, confirming that the flatness of the substrate W was further improved.

(Second Embodiment)
(composition)
In the substrate holding device as the second embodiment of the present invention shown in FIG. 5, the convex wall 12 is omitted. The difference in height between the upper end surface 112 of the convex portion 11 and the main surface 102 as the next lowest surface after the upper end surface 112 is, for example, 0.5 μm or more and 5 μm or less.

The pitch of the regular triangular lattice representing the arrangement mode of the plurality of first openings 212, the pitch of the regular triangular lattice representing the arrangement mode of the plurality of second openings 222, and the regular triangle representing the arrangement mode of the plurality of convex portions 11. The grid pitches are the same.

In the present embodiment, the plurality of rectangular unit regions S including the three first openings 212, the three second openings 222, and the three convex portions 11 coincide with each other on the short side and the long side. By arranging in, a part (excluding the peripheral portion) of the main surface 102 is configured. Each of the three first openings 212 is arranged to form the apex of each of the first equilateral triangles. Each of the three second openings 222 has a vertex on the perpendicular of one side of the first equilateral triangle, and has a perpendicular of one side on the same straight line as the perpendicular. They are arranged so as to form each vertex of an equilateral triangle. The three convex portions 11 are arranged so as to form the vertices of the third equilateral triangle with the second equilateral triangle inverted and having the same center of gravity as the second equilateral triangle.

Since the configurations other than these are substantially the same as those of the substrate holding member as the first embodiment of the present invention, the same reference numerals are used and the description thereof will be omitted.

(function)
According to the substrate holding device as the second embodiment of the present invention having the above configuration, the substrate W is placed on the substrate 1 and the substrate W is supported by at least a part of the plurality of convex portions 11. In this state, air is discharged from the space sandwiched between the back surface of the substrate W and the main surface 102 of the substrate 1 to the first flow path 21 through the first opening 212, so that the space is depressurized (FIG. 6 / black). See the down arrow). The substrate W is attracted toward the main surface 102 of the substrate 1 as a whole by the attractive force derived from the reduced pressure, and is supported by the plurality of convex portions 11. FIG. 6 is a cross-sectional view of the substrate holding member along the line BB of FIG.

At this time, the contact area between the substrate W and the substrate 1 is reduced by the amount that the substrate W is not in contact with the substrate 1 in the region corresponding to the second opening 222 (see FIG. 6). On the other hand, air is introduced from the second flow path 22 through the second opening 222 into the space sandwiched by the back surface of the substrate W and the main surface 102 of the substrate 1 (see FIG. 6 / black arrow). When the gas flowing from the second flow path 22 through the second opening 222 flows out to the first flow path 21 through the first opening 212 in the space sandwiched between the main surface 102 of the substrate 1 and the back surface of the substrate W. An attractive force or Bernoulli force toward the main surface of the substrate 1 acts on the substrate W (see FIG. 6 / white arrow). Here, when no attractive force or Bernoulli force acts on the substrate W, local bending that protrudes upward occurs in the region corresponding to the second opening 222 of the substrate W, and the flatness of the substrate W is lowered. However, due to the attractive force or Bernoulli force acting on the substrate W, local bending occurs in the region corresponding to the second opening 222 of the substrate W while reducing the contact area between the substrate W and the gas 1. This can be suppressed and the substrate W can be held in a state where high flatness is maintained.

Since each of the plurality of first openings 212, the plurality of second openings 222, and the plurality of protrusions 11 are regularly arranged on the main surface 102 of the substrate 1, the substrate W is placed in the first opening 212. Since the regularity of the distribution mode of the attractive force received in the corresponding region, the drag force received from the convex portion 11, and the attractive force or Bernoulli force received in the region corresponding to the second opening 222 is ensured, the substrate W as a whole is secured. Uniform flatness can be achieved.

(Example 2)
The substrate holding device of Example 2 was manufactured according to the second embodiment. Specifically, a plate-shaped SiC sintered body was processed to produce a substantially disk-shaped substrate 1 having a diameter of φ300 mm and a thickness of t6 mm. A plurality of circular first openings 212 having a diameter of φ5 mm were arranged so as to form a regular triangular lattice having a pitch of 20 mm. A plurality of circular second openings 222 having a diameter of φ13 mm were arranged so as to form a regular triangular lattice having a pitch of 20 mm. A plurality of substantially columnar convex portions 11 having a diameter of φ0.5 mm and a height of 100 μm were arranged so as to form a regular triangular lattice having a pitch of 20 mm.

After the silicon wafer as the substrate W is placed on the substrate 1, the substrate W and the main surface 102 of the substrate 1 pass through the first flow path 21 in a state where the second flow path 22 communicates with the atmosphere. The sandwiched space was decompressed. In this state, the flatness of the substrate W was measured with a laser interferometer (GPI Hs manufactured by ZYGO). The measurement result is a PV value of 0.1 μm in a quadrangular region of the substrate W having a side of 20 mm and including a region corresponding to the second opening 222, and a PV value of 0.5 μm in the entire substrate W. It was confirmed that sufficient flatness of the substrate W was realized.

After that, the number of particles adhering to the back surface of the substrate W was measured with a particle counter (WA-10 manufactured by Topcon Corporation). The number of particles having a size of 0.4 μm or more was “72”. It was confirmed that this is an extremely small value as compared with the number of particles "412" of the substrate holding device of the above-mentioned comparative example.

Further, the same evaluation was performed with the second flow path 22 connected to the pressure adjusting device, but the area of the substrate W that was a quadrangle with a side of 20 mm and corresponds to the second opening 222 was defined. The PV value of the included region was 0.09 μm, and the PV value of the entire substrate W was 0.4 μm, confirming that the flatness of the substrate W was further improved.

(Other Embodiments of the present invention)
On the main surface 102 of the substrate 1, a part or all of the plurality of protrusions 11, the plurality of first openings 212, and the plurality of second openings 222 may be irregularly arranged.

The arrangement mode of the plurality of convex portions 11, the plurality of first openings 212, and the plurality of second openings 222 on the main surface 102 of the substrate 1 may be variously changed. For example, as a regular arrangement mode, any one of a square grid, an orthorhombic grid, a rectangular grid, and a parallelepiped may be adopted in addition to the regular triangular grid. Further, as a regular arrangement mode, an arrangement mode having arbitrary symmetry such as translational symmetry, rotational symmetry, and reflection symmetry may be adopted. An arrangement mode may be adopted in which the main surface 102 of the substrate 1 is arranged radially from a reference point (for example, a center point), and the mutual spacing or pitch gradually changes as the distance from the reference point increases. In this case, the unit region S that is regularly arranged so as to form at least a part of the main surface 102 of the substrate 1 may not exist.

1-base, 11-convex, 12-convex wall, 14-annular convex, 21-first flow path, 22-second flow path, 102-main surface, 212-first opening, 222-first 2 openings, W ... board.

Claims (8)

A plate-shaped substrate with a main surface and
One or more first flow paths provided inside the substrate, and
A plurality of first openings formed by opening the one or more first flow paths to the main surface, and
A plurality of protrusions for supporting a substrate is erected on the main surface,
With one or more second channels provided inside the substrate,
A plurality of second openings formed by opening the one or more second flow paths to the main surface are provided.
The main surface has a regular unit region in which one or more of the first openings, one or more of the second openings, and one or more of the protrusions are arranged in a predetermined positional relationship. A substrate holding member in which at least a part of the main surface is formed by the plurality of unit regions arranged in the above .
Depending on the gas present in the space between the substrate and the main surface is supported by at least some of the previous SL plurality of raised portions are discharged to the first flow path through the first opening The substrate holding member is configured such that a gas is introduced into the space from the second flow path through the second opening. The substrate holding member according to claim 1, wherein each of the plurality of first openings, the plurality of second openings, and the plurality of convex portions is regularly arranged on the main surface. .. The first or second aspect of the present invention, wherein the main surface between the first opening and the second opening has a convex wall erected at a height lower than that of the convex portion. Board holding member. The substrate holding member according to claim 3 , wherein the convex wall is an annular wall provided so as to surround the periphery of the second opening. The first or second aspect of the present invention, wherein the height difference between the upper end surface of the convex portion and the main surface as the next lowest surface after the upper end surface is 0.5 to 5 μm. Board holding member. 3. 4. The substrate holding member according to 4. The first aspect of any one of claims 1 to 6, wherein the second flow path is connected to a pressure adjusting device that is open to the atmosphere or adjusts the air pressure in the second flow path. Board holding member. A plate-shaped substrate with a main surface and
One or more first flow paths provided inside the substrate, and
A plurality of first openings formed by opening the one or more first flow paths to the main surface, and
A plurality of protrusions erected on the main surface to support the substrate, and
With one or more second channels provided inside the substrate,
A plurality of second openings formed by opening the one or more second flow paths to the main surface are provided.
The main surface has a regular unit region in which one or more of the first openings, one or more of the second openings, and one or more of the protrusions are arranged in a predetermined positional relationship. A method of holding a substrate by using a substrate holding member in which at least a part of the main surface is formed by the plurality of unit regions arranged in the above.
A step of mounting the substrate on the substrate to support the substrate by at least a part of the plurality of convex portions.
The gas present in the space between the main surface of the substrate and the substrate, prior SL is discharged to the first flow path before SL through the first opening and the through pre Symbol second opening first (2) A substrate holding method comprising a step of introducing a gas into the space from a flow path.

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