JP7004928B2 - Manufacturing method of light source device - Google Patents

Description

The present invention relates to a method for manufacturing a light source device.

A substrate including a base portion provided with an opening portion and a mounting portion arranged on the base portion so as to close the opening portion, an electrode exposed from the opening portion, and an electrode and a motherboard are soldered to each other. Light emitting diodes that are electrically bonded are known (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2013-041865

An object of the present invention is to provide a method for manufacturing a light source device capable of suppressing tilting and joining of a light emitting device with respect to a motherboard (support substrate).

The method for manufacturing a light source device according to one aspect of the present invention includes a front surface extending in a longitudinal direction and a lateral direction orthogonal to the longitudinal direction, a back surface located on the opposite side of the front surface, and adjacent to the front surface. A base material having an upper surface orthogonal to the front surface, a lower surface located on the opposite side of the upper surface, and a plurality of recesses opened in the back surface and the lower surface, a first wiring arranged on the front surface, and the first wiring. A substrate having a second wiring electrically connected to one wiring and arranged in each of the plurality of recesses, and at least electrically connected to the first wiring and placed on the first wiring. A support substrate including a step of preparing a light emitting device including one light emitting element, a support base material, a wiring pattern including a joint region on the upper surface of the support base material, and an insulating region surrounding the joint region. A step of preparing, a step of arranging the solder on the joint region and the insulating region so that the volume of the solder located on the insulating region is larger than the volume of the solder located on the bonded region. In top view, the step of placing the light emitting device on the support substrate by separating the solder from the second wiring located near the bottom surface, and heating and melting the solder to make the second wiring of the light emitting device. And the step of joining the bonding region of the support substrate.

According to the method for manufacturing a light source device according to the present invention, it is possible to provide a light source device capable of suppressing tilting and joining of a light emitting device with respect to a support substrate.

FIG. 1A is a schematic perspective view of the light emitting device according to the first embodiment. FIG. 1B is a schematic perspective view of the light emitting device according to the first embodiment. FIG. 2A is a schematic front view of the light emitting device according to the first embodiment. FIG. 2B is a schematic cross-sectional view taken along the line I-I of FIG. 2A. FIG. 2C is a schematic cross-sectional view taken along line II-II of FIG. 2A. FIG. 3 is a schematic bottom view of the light emitting device according to the first embodiment. FIG. 4A is a schematic rear view of the light emitting device according to the first embodiment. FIG. 4B is a schematic rear view of a modified example of the light emitting device according to the first embodiment. FIG. 5 is a schematic front view of the substrate according to the first embodiment. FIG. 6 is a schematic side view of the light emitting device according to the first embodiment. FIG. 7A is a schematic top view of the support substrate according to the first embodiment. FIG. 7B is a schematic cross-sectional view taken along the line III-III of FIG. 7A. FIG. 8A is a schematic top view of a modified example of the support substrate according to the first embodiment. FIG. 8B is a schematic cross-sectional view taken along the line IV-IV of FIG. 8A. FIG. 9A is a schematic top view illustrating a method of manufacturing the light source device according to the first embodiment. 9B is a schematic cross-sectional view taken along the line VV of FIG. 9A. FIG. 9C is a schematic cross-sectional view illustrating a method of manufacturing a modified example of the light source device according to the first embodiment. FIG. 9D is a schematic top view illustrating a modified example of the manufacturing method of the light source device according to the first embodiment. FIG. 9E is a schematic top view illustrating a modified example of the manufacturing method of the light source device according to the first embodiment. FIG. 9F is a schematic top view illustrating a modified example of the manufacturing method of the light source device according to the first embodiment. FIG. 10A is a schematic top view illustrating a method of manufacturing the light source device according to the first embodiment. FIG. 10B is a schematic cross-sectional view taken along the line VI-VI of FIG. 10A. FIG. 10C is a schematic cross-sectional view illustrating a method of manufacturing a modified example of the light source device according to the first embodiment. FIG. 11C is a schematic cross-sectional view illustrating the method for manufacturing the light source device according to the first embodiment. FIG. 12A is a schematic perspective view of the light emitting device according to the second embodiment. FIG. 12B is a schematic perspective view of the light emitting device according to the second embodiment. FIG. 13A is a schematic front view of the light emitting device according to the second embodiment. FIG. 13B is a schematic cross-sectional view taken along the line VII-VII of FIG. 13A. FIG. 14 is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment.

Hereinafter, embodiments of the invention will be described with reference to the drawings as appropriate. However, the light emitting device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following unless otherwise specified. Further, the contents described in one embodiment can be applied to other embodiments and modifications. Further, the size and positional relationship of the members shown in the drawings may be exaggerated in order to clarify the explanation.

<Embodiment 1>
The method for manufacturing the light source device according to the first embodiment of the present invention will be described with reference to FIGS. 1A to 11.

The method for manufacturing the light emitting device according to the first embodiment is as follows.
(1) The front extending in the longitudinal direction and the lateral direction orthogonal to the longitudinal direction, the back surface located on the opposite side of the front surface, the upper surface adjacent to the front surface and orthogonal to the front surface, and the lower surface located on the opposite side of the upper surface surface. A base material having a plurality of recesses opening on the back surface and the lower surface, a first wiring arranged on the front surface, and a second wiring electrically connected to the first wiring and arranged in each of the plurality of recesses. And, with a substrate,
A step of preparing a light emitting device including at least one light emitting element electrically connected to the first wiring and mounted on the first wiring.
(2) A step of preparing a support substrate including a support base material, a wiring pattern including a joint region on the upper surface of the support base material, and an insulating region surrounding the joint region.
(3) A step of arranging the solder on the bonding region and the insulating region so that the volume of the solder located on the insulating region is larger than the volume of the solder located on the bonding region.
(4) In the top view, the process of mounting the light emitting device on the support substrate with the solder and the second wiring located near the bottom surface separated from each other.
(5) Includes a step of heating and melting the solder to join the second wiring of the light emitting device and the joining region of the support substrate.

According to the method for manufacturing the light source device of the embodiment configured as described above, it is possible to suppress the formation of solder after heating and melting between the lower surface of the base material and the upper surface of the support substrate. can. As a result, it is possible to prevent the light emitting device from being tilted and joined with respect to the support substrate.

(Process to prepare light emitting device)
As shown in FIG. 2B, a light emitting device 1000 including a substrate 10 and at least one light emitting element 20 is prepared. The substrate 10 includes a base material 11, a first wiring 12, and a second wiring 13. The base material 11 has a front surface 111 extending in the longitudinal direction and a lateral direction orthogonal to the longitudinal direction, a back surface 112 located on the opposite side of the front surface, an upper surface 113 adjacent to the front surface and orthogonal to the front surface, and the opposite of the upper surface surface. It has a lower surface 114 located on the side. Further, the base material 11 has a back surface 112 and a bottom surface 11.
It has a plurality of recesses 16 that open in 4. The first wiring 12 is arranged on the front surface 111 of the base material 11. The second wiring 13 is electrically connected to the first wiring 12 and is arranged in each of the plurality of recesses 16. In the present specification, orthogonality means that a variation of about 90 ± 3 ° is allowed. Further, in the present specification, the longitudinal direction may be referred to as the X direction, the lateral direction may be referred to as the Y direction, and the direction from the back surface 112 to the front surface 111 may be referred to as the Z direction.

The second wiring 13 of the substrate 10 and the bonding region which is a part of the wiring pattern of the support substrate are bonded by soldering. By arranging the second wiring in each of the plurality of recesses, the light emitting device has the plurality of second wiring 13. Since the light emitting device has a plurality of second wirings, the bonding strength between the light emitting device and the support substrate can be improved as compared with the case where the light emitting device has one second wiring.

The depth of each of the plurality of recesses 16 is not particularly limited, but as shown in FIG. 2C, the depth of each of the plurality of recesses 16 in the Z direction is lower surface 1 than the depth W2 of the recesses on the upper surface 113 side.
It is preferable that the depth W1 of the depression on the 14 side is deep. By doing so, in the Z direction, the thickness W5 of the base material 11 located on the upper surface 113 side of the depression can be made thicker than the thickness W6 of the base material located on the lower surface side of the depression. This makes it possible to suppress a decrease in the strength of the base material. Further, since the depth of the recess 16 in the Z direction is deeper on the lower surface 114 side than on the upper surface 113 side, the area of the opening of the recess 16 on the lower surface 114 of the base material 11 can be increased.
The lower surface 114 of the base material 11 and the upper surface of the support substrate face each other, and the light emitting device and the support substrate are joined by soldering. By increasing the area of the recessed opening on the lower surface of the base material facing the support substrate, the area of the solder located on the lower surface 114 side of the base material 11 can be increased. This makes it possible to improve the bonding strength between the light emitting device and the support substrate.

The recess 16 may penetrate the base material and may not penetrate the base material 11 as shown in FIGS. 2B and 2C. Since the recess 16 does not penetrate the base material, the strength of the base material can be improved as compared with the case where the recess 16 penetrates the base material. When the recess 16 does not penetrate the substrate, the maximum depth of each of the plurality of recesses in the Z direction is preferably 0.4 to 0.8 times the thickness W3 of the substrate. Since the depth of the recess is deeper than 0.4 times the thickness of the base material, the volume of the solder formed in the recess can be increased, so that the bonding strength between the light emitting device and the support substrate can be improved. .. Since the depth of the recess is shallower than 0.8 times the thickness of the base material, the strength of the base material can be improved.

In cross-sectional view, the recess 16 preferably includes a parallel portion 161 extending in the Z direction. By providing the parallel portion 161 it is possible to increase the volume of the recess 16 in the base material even if the area of the opening of the recess 16 on the back surface 112 is the same. By increasing the volume of the recess 16, the amount of solder that can be formed in the recess can be increased, so that the bonding strength between the light emitting device 1000 and the support substrate can be improved. In this specification, parallel means ± 3 °.
Fluctuations in degree shall be tolerated. Further, in the cross-sectional view, the recess 16 is the lower surface 11 of the base material.
An inclined portion 162 that inclines in a direction in which the thickness of the base material becomes thicker from 4 may be provided. Inclined part 1
62 may be straight or curved. Since the inclined portion 162 is a straight line, it is easy to form by a drill having a sharp tip. It should be noted that the straight line in the inclined portion 162 is allowed to fluctuate by about ± 3 μm.

As shown in FIG. 3, it is preferable that the depth R1 at the center of each of the plurality of recesses 16 on the lower surface of the base material is the maximum depth of the recesses in the Z direction. By doing so, on the lower surface, the thickness R2 of the base material in the Z direction can be increased at the end of the recess in the X direction, so that the strength of the base material can be improved. In this specification, the center is ± 5
Fluctuations of about μm are allowed. The recess 16 can be formed by a known method such as a drill or a laser. On the underside, the depression with the maximum central depth can be easily formed by a sharp-edged drill. Further, by using a drill, it is possible to form a recess having a substantially conical shape at the deepest portion and having a substantially cylindrical shape continuous from the circular shape of the bottom surface of the substantially conical shape. By cutting a part of the dent by dicing or the like, the deepest portion has a substantially semi-cylindrical shape, and a dent having a substantially semi-cylindrical shape continuous from a substantially semi-circular shape can be formed. By doing so, as shown in FIG. 4A, the opening shape of the recess 16 can be made into a substantially semicircular shape on the back surface. Since the opening shape of the dent is a substantially semicircular shape without corners, it is possible to suppress the concentration of stress related to the dent, and thus it is possible to prevent the base material from cracking.

On the back surface, the shapes of the plurality of recesses 16 may be different, and as shown in FIG. 4A, the shapes of the plurality of recesses 16 may be the same on the back surface. Since the shapes of the plurality of dents are the same, it is easier to form the dents than when the shapes of the dents are different from each other. For example, in the case of forming a dent by a drill method, if the shapes of the plurality of dents are the same, the dent can be formed by one drill. still,
The same in the present specification means that a variation of about ± 5 μm is allowed.

As shown in FIG. 4A, it is preferable that each of the plurality of recesses 16 on the back surface is symmetrically positioned with respect to the center line C1 of the base material parallel to the Y direction. By doing so, self-alignment works effectively when the light emitting device is joined to the support substrate via solder, and the light emitting device can be mounted on the support substrate with high accuracy.

As shown in FIG. 2B, the substrate 10 may include a third wiring 14 arranged on the back surface 112 of the substrate 11. Further, the substrate 10 may include a via 15 that electrically connects the first wiring 12 and the third wiring 14. The via 15 is provided in a hole penetrating the front surface 111 and the back surface 112 of the base material 11. The via 15 includes a fourth wiring 151 that covers the surface of the through hole of the base material and a filling member 152 that is filled inside the fourth wiring 151. The filling member 152 may be conductive or insulating. It is preferable to use a resin material for the filling member 152. Generally, the resin material before curing has higher fluidity than the metal material before curing, so that it is easy to fill the inside of the fourth wiring 151. Therefore, the use of a resin material for the filling member facilitates the manufacture of the substrate.
Examples of the resin material that can be easily filled include epoxy resin. When a resin material is used as the filling member, it is preferable to include an additive member in order to reduce the linear expansion coefficient. By doing so, the difference between the linear expansion coefficient of the 4th wiring and the linear expansion coefficient of the filling member becomes small, so that it is possible to suppress the formation of a gap between the 4th wiring and the filling member due to the heat from the light emitting element. can. Examples of the additive member include silicon oxide. Further, when a metal material is used for the filling member 152, heat dissipation can be improved.

As shown in FIGS. 2B and 4A, the via 15 and the recess 16 may be in contact with each other, or the via 15 and the recess 16 may be separated from each other as in the light emitting device 1001 shown in FIG. 4B. Via 15
When the recess 16 and the recess 16 are in contact with each other, the fourth wiring 151 and the second wiring can be in contact with each other, so that the heat dissipation of the light emitting device can be improved. By separating the via 15 and the recess 16, the strength of the base material can be improved as compared with the case where the via 15 and the recess 16 are in contact with each other.

As shown in FIG. 2B, the light emitting element 20 is arranged on the first wiring 12. Light emitting device 100
0 may include at least one light emitting element 20. The light emitting element 20 includes a mounting surface facing the substrate 10 and a light extraction surface 201 located on the opposite side of the mounting surface. Light emitting element 2
0 includes at least the semiconductor laminate 23, and the semiconductor laminate 23 is provided with element electrodes 21 and 22. The light emitting element 20 may be flip-chip mounted on the substrate 10. This eliminates the need for a wire that supplies electricity to the element electrodes of the light emitting element, so that the light emitting device can be miniaturized. When the light emitting element 20 is flip-chip mounted, the light emitting element 20
The electrode forming surface 203 on which the element electrodes 21 and 22 of the above are located and the surface on the opposite side are the light extraction surface 201.
And. In the present embodiment, the light emitting element 20 has the element substrate 24, but the element substrate 24 may not be provided. When the light emitting element 20 is flip-chip mounted on the substrate 10, the element electrodes 21 and 22 of the light emitting element are electrically connected to the first wiring 12 via the conductive adhesive member 60.

The light emitting element 20 may be arranged such that the surface opposite to the electrode forming surface on which the element electrode is located faces the substrate. In this case, the electrode forming surface becomes the light extraction surface. The light emitting device is
In order to supply electricity to the light emitting element, a wire that electrically joins the element electrode of the light emitting element and the first wiring may be provided.

When the light emitting element 20 is flip-chip mounted on the substrate 10, it is preferable that the first wiring 12 includes the convex portion 121 as shown in FIGS. 2B and 5. In top view, the first
The convex portion 121 of the wiring 12 is located at a position where it overlaps with the element electrodes 21 and 22 of the light emitting element 20.
By doing so, when a meltable adhesive is used as the conductive adhesive member 60, the first
When the convex portion 121 of the wiring and the element electrodes 21 and 22 of the light emitting element are connected, the alignment of the light emitting element and the substrate can be easily performed by the self-alignment effect.

As shown in FIG. 2B, the light emitting device 1000 may include a reflecting member 40 that covers the element side surface 202 of the light emitting element 20 and the front surface 111 of the base material. Element side surface 202 of light emitting element 20
By being covered with the reflective member, the contrast between the light emitting region and the non-light emitting region is increased, and the light emitting device having good "parting ability" can be obtained.

As the material of the reflective member 40, for example, a member containing a white pigment in the base material can be used. As the base material of the reflective member 40, it is preferable to use a resin, for example, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof, or the like is preferably used. In particular, as a base material for the reflective member 40,
It is preferable to use a silicone resin having excellent heat resistance and light resistance. Further, as the base material of the reflective member 40, an epoxy resin having a hardness higher than that of the silicone resin may be used. By doing so, the strength of the light emitting device can be improved.

Examples of the white pigment of the reflective member 40 include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, and aluminum hydroxide. ,
One of aluminum oxide, zirconium oxide, silicon oxide, etc. can be used alone, or two or more of them can be used in combination. The shape of the white pigment can be appropriately selected and may be amorphous or crushed, but from the viewpoint of fluidity, it is preferably spherical. Further, the particle size of the white pigment is preferably, for example, about 0.1 μm or more and 0.5 μm or less, but in order to enhance the effect of light reflectivity and coating property, the smaller the particle size of the white pigment, the smaller the particle size. preferable. The content of the white pigment can be appropriately selected, but from the viewpoint of light reflectivity and viscosity in the liquid state, for example, it is preferably 10 wt% or more and 80 wt% or less, and 20 wt% or more and 70 w.
It is more preferably t% or less, and further preferably 30 wt% or more and 60 wt% or less. In addition, "wt
"%" Is a weight percent, and represents the ratio of the weight of the material to the total weight of the reflective member.

As shown in FIG. 6, the side surface 40 in the longitudinal direction of the reflective member 40 located on the lower surface 114 side of the base material.
4 is preferably inclined inward of the light emitting device 1000 in the Z direction. By doing so, when the light emitting device 1000 is mounted on the support substrate, the side surface 404 of the reflective member 40
The contact between the light emitting device and the support substrate is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. It is preferable that the side surface 403 in the longitudinal direction of the reflective member 40 located on the upper surface 113 side of the base material is inclined inward of the light emitting device 1000 in the Z direction. By doing so, the contact between the side surface of the reflective member 40 and the suction nozzle (collet) can be suppressed, and damage to the reflective member 40 at the time of suction of the light emitting device 1000 can be suppressed. In this way, the reflective member 4 located on the lower surface 114 side
Longitudinal side surface 404 of 0 and longitudinal side surface 4 of the reflective member 40 located on the upper surface 113 side.
03 is preferably inclined inward of the light emitting device 1000 in the Z direction. The inclination angle θ of the reflective member 40 can be appropriately selected, but the ease with which such an effect can be achieved and the reflective member 4
From the viewpoint of the strength of 0, it is preferably 0.3 ° or more and 3 ° or less, more preferably 0.5 ° or more and 2 ° or less, and 0.7 ° or more and 1.5 ° or less. Even more preferable.

As shown in FIG. 2B, the light emitting device 1000 may include a translucent member 30. The translucent member 30 is preferably located on the light emitting element 20. By locating the translucent member 30 on the light emitting element 20, the light emitting element can be protected from external stress. The reflective member 40 preferably covers the side surface of the translucent member 30. By doing so, the contrast between the light emitting region and the non-light emitting region becomes high, and it is possible to obtain a light emitting device having good "parting ability".

The translucent member 30 may be in contact with the light extraction surface 201, or may cover the light extraction surface 201 via the light guide member 50 as shown in FIG. 2B. The light guide member 50 may be located only between the light extraction surface 201 of the light emitting element and the translucent member 30, and the light emitting element 20 and the translucent member 30 may be fixed, or the light extraction surface 201 of the light emitting element may be fixed. From the element side surface 202 of the light emitting element
The light emitting element 20 and the translucent member 30 may be fixed by covering up to. The light guide member 50 has a higher transmittance of light from the light emitting element than the reflective member 40. Therefore, when the light guide member covers the side surface of the light emitting element, the light emitted from the side surface of the light emitting element can be easily taken out to the outside of the light emitting device through the light guide member, so that the light extraction efficiency can be improved.

The translucent member 30 may contain wavelength conversion particles. By doing so, the color adjustment of the light emitting device becomes easy. The wavelength conversion particles are members that absorb at least a part of the primary light emitted by the light emitting element 20 and emit secondary light having a wavelength different from that of the primary light. By including the wavelength conversion particles in the translucent member 30, it is possible to output a mixed color light in which the primary light emitted by the light emitting element and the secondary light emitted by the wavelength conversion particles are mixed. For example, the light emitting element 20 has a blue L.
If the ED uses a phosphor such as YAG as the wavelength conversion particle, a light emitting device that outputs white light obtained by mixing the blue light of the blue LED and the yellow light emitted by the phosphor excited by the blue light. Can be configured. Further, a light emitting device that outputs white light is configured by using a blue LED as the light emitting element 20, a β-sialon-based phosphor which is a green phosphor as a wavelength conversion particle, and a manganese-activated fluoride-based phosphor which is a red phosphor. You may.

The wavelength conversion particles may be uniformly dispersed in the translucent member, or the wavelength conversion particles may be unevenly distributed in the vicinity of the light emitting element rather than the upper surface of the translucent member 30. By unevenly distributing the wavelength conversion particles in the vicinity of the light emitting element rather than the upper surface of the translucent member 30, the base material of the translucent member 30 functions as a protective layer even if the wavelength conversion particles weak to moisture are used. Deterioration of wavelength conversion particles can be suppressed. Further, as shown in FIG. 2B, the translucent member 30 may include layers 31 and 32 containing wavelength-converting particles, and layers 33 that do not substantially contain wavelength-converting particles. In the Z direction, the layer 33 that does not substantially contain the wavelength conversion particles is located above the layers 31 and 32 that contain the wavelength conversion particles. By doing so, the layer 33 that does not substantially contain the wavelength conversion particles functions as a protective layer, so that deterioration of the wavelength conversion particles can be suppressed. Examples of the wavelength conversion particles that are sensitive to moisture include manganese-activated fluoride phosphors. Manganese-activated fluoride-based phosphors are
It is a preferable member from the viewpoint of color reproducibility because it can emit light with a relatively narrow spectral line width.
"Substantially containing no wavelength conversion particles" means that the wavelength conversion particles inevitably mixed are not excluded, and the content of the wavelength conversion particles is preferably 0.05% by weight or less.

The layer containing the wavelength conversion particles of the translucent member 30 may be a single layer or a plurality of layers. For example, as shown in FIG. 2B, the translucent member 30 includes a first wavelength conversion layer 31 and a first wavelength conversion layer 31.
A second wavelength conversion layer 32 may be provided. The second wavelength conversion layer 32 may directly cover the first wavelength conversion layer 31, or may cover the first wavelength conversion layer 31 via another translucent layer. The first wavelength conversion layer 31 is arranged closer to the light extraction surface 201 of the light emitting element 20 than the second wavelength conversion layer 32. The emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 31 is preferably shorter than the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 32. By doing so, the wavelength conversion particles of the second wavelength conversion layer 32 can be excited by the light from the first wavelength conversion layer 31 excited by the light emitting element.
As a result, the light from the wavelength conversion particles of the second wavelength conversion layer 32 can be increased.

The emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 31 is 500 nm or more and 5
It is preferably 70 nm or less, and the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 32 is preferably 610 nm or more and 750 nm or less. By doing so, it is possible to obtain a light emitting device having high color reproducibility. For example, β-sialon-based phosphors can be mentioned as the wavelength conversion particles contained in the first wavelength conversion layer 31, and manganese-activated potassium fluoride silicate phosphors can be mentioned as the wavelength conversion particles contained in the second wavelength conversion layer 32. Be done. Second wavelength conversion layer 3
When a phosphor of manganese-activated potassium fluorinated silicate is used as the wavelength conversion particles contained in 2, the translucent member 30 includes a first wavelength conversion layer 31 and a second wavelength conversion layer 32. Is preferable. The phosphor of manganese-activated potassium fluoride silicate tends to cause brightness saturation, but the light from the light emitting element is excessively generated because the first wavelength conversion layer 31 is located between the second wavelength conversion layer 32 and the light emitting element 20. It is possible to suppress irradiation with a phosphor of manganese-activated potassium fluoride silicate. As a result, deterioration of the phosphor of manganese-activated potassium fluoride fluorinated silicate can be suppressed.

The translucent member absorbs at least a part of the primary light emitted by the light emitting element, and absorbs at least a part of the first wavelength conversion particle that emits the secondary light due to the forbidden transition and the primary light emitted by the light emitting element. , A second wavelength conversion particle that emits secondary light due to a permissible transition may be provided. In general, the first wavelength conversion particles that emit secondary light due to the forbidden transition have a longer afterglow time than the second wavelength conversion particles that emit secondary light due to the allowable transition. Therefore, the translucent member is the first wavelength conversion particle and the second.
By including the wavelength conversion particles, the afterglow time can be shortened as compared with the case where the translucent member includes only the first wavelength conversion particles. For example, examples of the first wavelength conversion particles include a manganese-activated potassium fluoride silicate phosphor (for example, K2 SiF ₆ : Mn), and examples of the _second wavelength conversion particles include CASN-based phosphors. By containing the CASN-based phosphor and the manganese-activated potassium fluoride silicate phosphor in the translucent member, the translucent member remains more than the case where only the manganese-activated potassium fluoride silicate phosphor is contained. The light time can be shortened. Further, in general, manganese-activated potassium fluoride silicate has an emission peak having a narrower half-value width than the CASN-based phosphor, so that the color purity is high and the color reproducibility is good. Therefore, by containing the CASN-based phosphor and the manganese-activated potassium fluoride silicate phosphor in the translucent member, the color reproducibility is higher than that in the case where the translucent member contains only the CASN-based phosphor. Becomes good.

For example, the weight of the manganese-activated potassium fluoride silicate phosphor contained in the translucent member is C.
The weight of the phosphor of the ASN-based phosphor is preferably 0.5 times or more and 6 times or less, more preferably 1 time or more and 5 times or less, and further preferably 2 times or more and 4 times or less. By increasing the weight of the manganese-activated potassium fluoride silicate phosphor, the color reproducibility of the light emitting device is improved. The afterglow time can be shortened by increasing the weight of the phosphor of the CASN-based phosphor.

The average particle size of the manganese-activated potassium fluoride silicate phosphor is preferably 5 μm or more and 30 μm or less. Further, the average particle size of the CASN-based phosphor is preferably 5 μm or more and 30 μm or less. When the average particle size of the manganese-activated potassium fluoride fluorinated phosphor and / or the CASN-based phosphor is 30 μm or less, the light from the light emitting element is easily diffused to the wavelength conversion particles, so that the light distribution color of the light emitting device It is possible to suppress unevenness. When the average particle size of the manganese-activated potassium fluoride fluorinated phosphor and / or the CASN-based phosphor is 5 μm or more, it becomes easy to extract light from the light emitting element, so that the light extraction efficiency of the light emitting device is improved.

The CASN-based phosphor and the manganese-activated potassium fluoride silicate phosphor may be contained in the same wavelength conversion layer of the translucent member, and when the translucent member includes a plurality of wavelength conversion layers, the translucent member may be contained. , May be contained in different wavelength conversion layers. When the manganese-activated potassium fluoride silicate phosphor and the CASN-based phosphor are contained in different wavelength conversion layers, the light peaks at the manganese-activated potassium fluoride silicate phosphor and the CASN-based phosphor. It is preferable that the wavelength conversion particles having a short wavelength are located close to the light emitting element. By doing so, it is possible to excite the wavelength conversion particles having a long peak wavelength of light by the light from the wavelength conversion particles having a short peak wavelength of light. For example, the peak wavelength of light of a manganese-activated potassium fluoride silicate phosphor is 631.
When the peak wavelength of the light of the CASN-based phosphor is around 650 nm in the vicinity of nm, it is preferable that the phosphor of manganese-activated potassium fluoride silicate is close to the light emitting element.

Other second wavelength conversion particles include SCASSN-based phosphors and SLAN phosphors (SrLiA).
l ₃ N ₄ : Eu) and the like. For example, the translucent member may contain an SLAN phosphor and a manganese-activated potassium fluoride silicate phosphor. Further, the translucent member may contain first wavelength conversion particles and second wavelength conversion particles which are red phosphors, and β-sialon-based phosphors which are green phosphors. By doing so, the color reproducibility of the light emitting device is improved.

(Prepare the support board)
As shown in FIGS. 7A and 7B, a support substrate including a support base material 70, a first wiring pattern 81 including a joint region 810 on the upper surface 701 of the support base material 70, and an insulating region 811 surrounding the joint region 810. Prepare 5000. The support base material 70 is an insulating member. The bonding region 810 of the support substrate is a part of the first wiring pattern 81, and is a portion bonded to the second wiring of the light emitting device by soldering. The insulating region 811 surrounding the joint region 810 means that when the upper surface 701 of the support base material 70 is exposed to the outside as shown in FIG. 7A, the support base material 70 is the upper surface 701.
Is provided with an insulating region 811. By surrounding the bonding region 810 with the insulating region 811, it becomes easier to control the wetting and spreading of the molten solder. As a result, the self-alignment effect is increased and the mountability of the light emitting device is improved. Generally, the molten solder is the first than on the supporting substrate.
It is easy to get wet and spread on the wiring pattern. Known materials can be used for the support base material and the first wiring pattern.

As shown in FIG. 7B, the second wiring pattern 82 located on the lower surface of the support base material may be provided as shown in the support substrate 5000. The first wiring pattern 81 located on the upper surface of the support base material and the second wiring pattern 82 located on the lower surface of the support base material may be electrically connected by vias. Further, when the power feeding unit 85 for supplying electricity is provided on the upper surface of the substrate, the power feeding unit 85 and the second wiring pattern 82 may be electrically connected by vias.

As shown in FIGS. 8A and 8B, the support substrate 5001 may include an insulating layer 72 that covers the upper surface 701 of the support base material 70 and the first wiring pattern 81. When the insulating layer 72 surrounds the bonding region 810 of the first wiring pattern 81, the insulating layer 72 includes the insulating region 811. Generally, the molten solder tends to wet and spread on the first wiring pattern rather than on the insulating layer. When the bonding region of the first wiring pattern is surrounded by the supporting base material and the insulating layer, the insulating region may be provided by the supporting base material and the insulating layer.

(Place the solder on the joint area and insulation area)
As shown in FIGS. 9A and 9B, the solder 90 on the bonding region 810 and the insulating region 811 so that the volume of the solder 90 located on the insulating region 811 is larger than the volume of the solder 90 located on the bonding region 810. To place. By doing so, the volume of the solder 90 located on the joint region 810 can be reduced. This makes it possible to prevent the molten solder from invading between the lower surface of the base material and the upper surface of the support substrate when the light emitting device and the support substrate, which will be described later, are joined by soldering. Therefore, when the light emitting device and the support substrate are joined, it is possible to suppress the formation of solder after heating and melting between the lower surface of the base material and the upper surface of the support substrate. It is possible to prevent the light emitting device from tilting.

As shown in FIG. 9A, the maximum width D of the solder 90 located on the insulating region 811 in the top view.
It is preferable that 2 is wider than the maximum width D1 of the solder 90 located on the bonding region 810. By doing so, the volume of the solder 90 located on the insulating region 811 can be easily made larger than the volume of the solder 90 located on the bonding region 810. In the present specification, the maximum width of the solder 90 is the maximum value of the width of the solder in the X direction.

As shown in FIG. 9B, the upper surface of the solder 90 located on the insulating region 811 in the cross-sectional view and the upper surface of the solder 90 located on the bonding region 810 may be flush with each other. For example, by arranging a metal mask having an opening on a support substrate and forming solder in the opening of the metal mask by a screen printing method, the solder is located on the upper surface of the solder located on the insulating region and on the bonding region. It can be flush with the top surface of the solder. It should be noted that, in the present specification, a variation of about ± 5 μm is allowed to be flush with each other.

The maximum thickness of the solder located on the insulating region in the cross-sectional view may be the same as the maximum thickness of the solder located on the bonding region, and the maximum thickness of the solder located on the insulating region in the cross-sectional view is located on the bonding region. It may be thinner than the maximum thickness of the solder to be formed, and as shown in FIGS. 9B and 9C, the maximum thickness D4 of the solder 90 located on the insulating region 811 in the cross-sectional view is the maximum of the solder 90 located on the bonding region 810. It may be thicker than the thickness D3 of. 81 on the insulated area in cross-sectional view
Since the maximum thickness D4 of the solder 90 located at 1 is thicker than the maximum thickness D3 of the solder 90 located on the bonding region 810, the volume of the solder 90 located on the insulating region 811 becomes the bonding region 8.
It is easy to make it larger than the volume of the solder 90 located on the 10. For example, in top view
Even if the area of the solder located on the insulating region is smaller than the area of the solder located on the bonding region, the maximum thickness of the solder located on the insulating region in the cross-sectional view is the maximum of the solder located on the bonding region. By making it thicker than the thickness, the volume of solder located on the insulating region is reduced to the bonding region 810.
It can be larger than the volume of the solder 90 located above. In the present specification, the maximum thickness of the solder is the maximum value of the thickness of the solder in the Y direction.

As shown in FIG. 9A, the adhesive resin 92 before curing may be formed on the support substrate. The adhesive resin 92 can be used as a member for adhering the light emitting device and the support substrate. By providing the adhesive resin, the bonding strength between the light emitting device and the support substrate can be improved. The thickness of the adhesive resin in the Y direction is thicker than the distance between the lower surface of the base material and the upper surface of the support base material when the light emitting device described later is placed on the support substrate in order to come into contact with the light emitting element. As the adhesive resin, a known resin such as a thermosetting resin and / or a thermoplastic resin can be used. Thermosetting resins such as epoxy resins and silicone resins are excellent in heat resistance and light resistance, and are therefore preferably used as adhesive resins. The adhesive resin may be separated from the bonding region or may be in contact with a part of the bonding region. Since solder is formed on the bonded region, it is preferable that the adhesive resin is separated from the bonded region when viewed from above. When the adhesive resin is separated from the bonding region, the molten solder tends to wet and spread on the bonding region when the light emitting device and the support substrate are bonded by soldering. As shown in FIG. 9A, X
It is preferable that the adhesive resin 92 is located between the pair of bonding regions 810 to be bonded to the second wiring of one light emitting device in the direction. The second wiring of the light emitting device, the joint area of the support substrate,
Is bonded by soldering, so that the adhesive resin is located between the pair of bonding regions 810 to be bonded to the second wiring of the light emitting device in the X direction, thereby suppressing the stress on the base material of the light emitting device. Can be done.

Examples of the method for forming the adhesive resin before curing on the support substrate include coating by spraying or pin transfer, spraying by inkjet or spraying, and the like. When the adhesive resin is formed by a dispense or the like, the adhesive resin 92 may be applied at one point as shown in FIG. 9A, and the adhesive resin 92 may be applied at a plurality of points as shown in FIGS. 9D and 9E. You may. Further, as shown in FIG. 9F, adhesive resins coated at a plurality of points may be connected. When the adhesive resin 92 is applied at a plurality of points, it may be formed so that the plurality of adhesive resins are lined up in the Z direction, and the plurality of adhesive resins are lined up in the X direction as shown in FIG. 9D. It may be formed.

(Place the light emitting device on the support board)
As shown in FIGS. 10A and 10B, the light emitting device 1000 is placed on the support substrate 5000 with the solder 90 and the second wiring 13 located near the lower surface 114 of the base material separated from each other in the top view. In the present specification, the second wiring located near the lower surface of the base material means a portion of the second wiring 13 that is flush with the lower surface 114 of the base material. By placing the light emitting device on the support substrate with the solder 90 and the second wiring 13 located near the lower surface 114 of the base material separated from each other, the light emitting device and the support substrate were melted when they were joined by soldering. It is possible to prevent the solder from entering between the lower surface of the base material and the upper surface of the support substrate. As a result, the light emitting device, which will be described later, the support substrate, and
Since it is possible to suppress the formation of solder after heating and melting between the lower surface of the base material and the upper surface of the support substrate when the solder is bonded, it is possible to suppress the tilting of the light emitting device with respect to the support substrate. can.
Further, when the light emitting device 1000 is placed on the support substrate 5000 with the solder 90 and the second wiring 13 located near the lower surface 114 of the base material separated from each other, the lower surface 114 of the base material and the upper surface of the support substrate are separated from each other. The solder before heating and melting is not located between them.

As shown in FIG. 10B, the solder 90 and the second wiring 13 may be separated from each other in the cross-sectional view, and as shown in FIG. 10C, other than the solder 90 and the vicinity of the lower surface 114 of the base material in the cross-sectional view. It may be in contact with at least a part of the second wiring 13 located. The second wiring 13 located outside the vicinity of the lower surface 114 of the base material is a portion of the second wiring 13 that is not flush with the lower surface 114 of the base material. That is, the solder 90 and at least a part of the second wiring 13 that is not flush with the lower surface 114 of the base material may be in contact with each other.

As shown in FIG. 9A, when the adhesive resin 92 before curing is formed on the support substrate, the light emitting device is placed on the support substrate so that the adhesive resin before curing and a part of the light emitting device are in contact with each other. do. By doing so, the light emitting device and the support substrate can be fixed even with the adhesive resin after curing, so that the bonding strength between the light emitting device and the support substrate is improved. The position of the adhesive resin is not particularly limited. For example, FIG.
As shown in A, the adhesive resin 92 may be located between the plurality of recesses 16 of the base material. Board 1
Since the second wiring 13 arranged in each of the plurality of recesses of 0 and the bonding region of the wiring pattern of the support substrate are bonded by solder, the adhesive resin 92 is located between the plurality of recesses 16 of the base material. As a result, the stress on the base material of the light emitting device can be suppressed. Further, as shown in FIG. 10A, it is preferable that the shortest distance between the front surface 111 of the base material and the outer edge of the adhesive resin 92 is shorter than the shortest distance between the front surface 111 of the base material and the outer edge of the solder 90 in the top view. By doing so, the front surface 111 side of the base material and the support substrate can be joined by the adhesive resin 92.
The bonding strength between the light emitting device and the support substrate is improved. A light emitting device to which the adhesive resin before curing may be attached may be placed on the support substrate.

The size of the adhesive resin in the top view is not particularly limited, but the maximum width D5 of the adhesive resin in the Z direction in the top view is 0.2 to 0 times the maximum width D6 of the light emitting device in the Z direction.
.. It is preferably 7 times. Since the maximum width D5 of the adhesive resin in the Z direction is 0.2 times or more the maximum width D6 of the light emitting device in the Z direction in the top view, the volume of the adhesive resin increases, so that the light emitting device and the support substrate are joined. Strength is improved. When the maximum width D5 of the adhesive resin in the Z direction is 0.7 times or less the maximum width D6 of the light emitting device in the Z direction in the top view, it is possible to prevent the adhesive resin from being formed on the joint region.

In top view, it is preferable that the maximum width of the recess is narrower than the maximum width of the joint region. By doing so, it becomes easy to increase the area of the second wiring located on the joint region in the top view. The maximum width of the dent is the maximum value of the width of the dent in the X direction, and the maximum width of the joint region is the maximum value of the width of the joint region in the X direction.

(Join the second wiring of the light emitting device and the joint of the support board)
As shown in FIG. 11, the solder 90 is heated and melted, and the second wiring 13 of the light emitting device and the support substrate 50 are used.
The joining region 810 of 00 is joined. The molten solder is easy to get wet and spread in the joint region 8
Gather on top 10. Thereby, the volume of the solder after heating and melting located on the bonding region can be made larger than the volume of the solder after heating and melting located on the insulating region. Since the volume of the solder after heating and melting located on the bonding region is large, the second wiring 13 and the bonding region 810 are easily bonded by the solder. This improves the bonding strength between the light emitting device and the support substrate. Since the solder after heating and melting is unlikely to be formed between the lower surface of the base material and the upper surface of the support substrate, it is possible to prevent the light emitting device from being tilted and bonded to the support substrate. As shown in FIG. 11, it is preferable that all of the solder after heating and melting is located on the bonding region.

When the adhesive resin before curing is formed on the support substrate, the adhesive resin is cured when the solder is heated and melted to join the second wiring of the light emitting device and the bonding region 810 of the support substrate 5000. You may. By doing so, it is possible to shorten the time for manufacturing the light source device.

As described above, the light source device 1000A can be manufactured by performing each of the above steps.

<Embodiment 2>
A method of manufacturing the light source device according to the second embodiment will be described. The method for manufacturing the light source device according to the second embodiment is the same as the method for manufacturing the light source device according to the first embodiment, except that the steps for preparing the light emitting device are different.

As shown in FIG. 13B, a light emitting device 2000 including a substrate 10 and a plurality of light emitting elements is prepared. Similar to the light emitting device of the first embodiment, the substrate 10 includes the base material 11, the first wiring 12, and the second.
The wiring 13 is provided. The light emitting device of the first embodiment has one light emitting element, but the second embodiment
The light emitting device 2000 includes a first light emitting element 20A and a plurality of light emitting elements of the second light emitting element 20B. The first light emitting element and / or the second light emitting element may be referred to as a light emitting element. The emission peak wavelengths of the first light emitting element and the second light emitting element may be the same or different. For example, when the emission peak wavelengths of the first light emitting element and the second light emitting element are the same, the emission peak wavelengths of the first light emitting element and the second light emitting element are in the range of 430 nm or more and less than 490 nm (wavelength range in the blue region). There may be. When the emission peak wavelengths of the first light emitting element and the second light emitting element are different, the emission peak is emitted from the first light emitting element in the range where the emission peak wavelength is 430 nm or more and less than 490 nm (wavelength range in the blue region). It may be a second light emitting element having a wavelength in the range of 490 nm or more and 570 nm or less (wavelength range in the green region). By doing so, the color reproducibility of the light emitting device can be improved. It should be noted that fluctuations of about ± 10 nm are allowed when the emission peak wavelengths are the same.

As shown in FIG. 13B, a translucent member 30 that covers the first light emitting element 20A and the second light emitting element 20B may be provided. The light emitting device 2000 includes a first light emitting element and a second light emitting element 20 by providing a translucent member 30 that covers the first light taking out surface 201A of the first light emitting element 20A and the second light taking out surface 201B of the second light emitting element 20B. It is possible to suppress uneven brightness between light emitting elements. When the emission peak wavelengths of the first light emitting element and the second light emitting element are different, the first light emitting element is used.
By guiding the light from the light emitting element and the light from the second light emitting element to the light guide member, the color mixing property of the light emitting device can be improved.

As shown in FIG. 13B, the light guide member 50 may continuously cover the first element side surface 202A of the first light emitting element 20A and the second element side surface 202B of the second light emitting element 20B. By doing so, it is possible to suppress uneven brightness between the first light emitting element and the second light emitting element.

As shown in FIGS. 12B and 13B, the light emitting device 2000 may include an insulating film 18 that covers a part of the third wiring 14. By providing the insulating film 18, it is possible to secure the insulating property on the back surface and prevent a short circuit. Further, by providing the insulating film 18, a third from the base material is provided.
It is possible to prevent the wiring from peeling off.

The first translucent member 3 that covers the first light emitting element 20A like the light emitting device 2001 shown in FIG.
0A and a second translucent member 30B that covers the second light emitting element 20B may be provided.
The wavelength conversion particles contained in the first translucent member and the second translucent member may be the same or different. The first light emitting element having a peak wavelength of light emission in the range of 430 nm or more and less than 490 nm (wavelength range in the blue region) and the second light emitting element having a peak wavelength of light emission in the range of 490 nm or more and 570 nm or less (wavelength range in the green region). And, when the first translucent member 3 is provided.
It is not necessary to contain the red phosphor in 0A and substantially no wavelength conversion particles in the second translucent member 30B. By doing so, the color reproducibility of the light emitting device can be improved.
Further, since the light from the second light emitting element is not blocked by the wavelength conversion particles, the light extraction efficiency of the light emitting device is improved. Examples of the red phosphor contained in the first translucent member include a manganese-activated fluoride-based phosphor and the like.

Hereinafter, each component in the light emitting device according to the embodiment of the present invention will be described.

(Board 10)
The substrate 10 is a member on which a light emitting element is placed. The substrate 10 is at least the base material 11 and
A first wiring 12 and a second wiring 13 are provided.

(Base material 11)
The base material 11 can be configured by using an insulating member such as a resin or a fiber reinforced resin, ceramics, or glass. Examples of the resin or fiber reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT), polyimide and the like. Examples of the ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, or a mixture thereof. Among these base materials, it is particularly preferable to use a base material having physical properties close to the linear expansion coefficient of the light emitting device. The lower limit of the thickness of the base material can be appropriately selected, but from the viewpoint of the strength of the base material, it is preferably 0.05 mm or more, and more preferably 0.2 mm or more. Further, the upper limit of the thickness of the base material is preferably 0.5 mm or less from the viewpoint of the thickness (depth) of the light emitting device, and is 0.
.. It is more preferably 4 mm or less.

(1st wiring 12)
The first wiring is arranged in front of the base material and is electrically connected to the light emitting element. The first wiring is copper, iron, nickel, tungsten, chrome, aluminum, silver, gold, titanium, palladium,
It can be formed of rhodium or an alloy of these. These metals or alloys may be single-layered or multi-layered. In particular, copper or a copper alloy is preferable from the viewpoint of heat dissipation. Further, on the surface layer of the first wiring, from the viewpoint of the wettability and / or light reflectivity of the meltable conductive adhesive member, etc.,
Layers such as silver, platinum, aluminum, rhodium, gold or alloys thereof may be provided.

(Second wiring 13)
The second wiring is a member that is electrically connected to the first wiring and covers the inner wall of the recess of the base material.
As the second wiring, the same conductive member as the first wiring can be used.

(Light emitting element 20 (first light emitting element, second light emitting element))
The light emitting element is a semiconductor element that emits light by itself by applying a voltage, and a known semiconductor element composed of a nitride semiconductor or the like can be applied. Examples of the light emitting element include an LED chip. The light emitting device comprises at least a semiconductor layer, and in many cases further comprises an element substrate. The light emitting element has an element electrode. The element electrode can be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or an alloy thereof. As the semiconductor material, it is preferable to use a nitride semiconductor. Nitride semiconductors are mainly represented by the general formula In _x Al _y Ga _1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). In addition, InAlGaAs-based semiconductors, InAlGaP-based semiconductors, zinc sulfide, zinc selenide, silicon carbide and the like can also be used. The element substrate of the light emitting element is mainly a crystal growth substrate capable of growing semiconductor crystals constituting the semiconductor laminate, but may be a bonding substrate for joining to a semiconductor element structure separated from the crystal growth substrate. .. Since the element substrate has translucency, it is easy to adopt flip-chip mounting, and it is easy to improve the light extraction efficiency. Examples of the base material of the device substrate include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenic, gallium phosphorus, indium phosphorus, zinc sulfide, zinc oxide, zinc selenium, and diamond. Of these, sapphire is preferable. The thickness of the element substrate can be appropriately selected, for example, 0.02 mm or more and 1 mm or less, and the strength of the element substrate and /
Alternatively, from the viewpoint of the thickness of the light emitting device, it is preferably 0.05 mm or more and 0.3 mm or less.

(Reflective member 40)
The reflective member is a member that covers the element side surface 202 of the light emitting element 20 and the front surface 111 of the base material to form a light emitting device having good “parting ability”. The light reflectance of the reflecting member at the emission peak wavelength of the light emitting element is preferably 70% or more, more preferably 80% or more.
It is even more preferable that it is 90% or more. For example, as the reflective member, a member in which a white pigment is contained in a resin can be used.

(Translucent member 30)
The translucent member is a translucent member that covers the light extraction surface of the light emitting element and protects the light emitting element. As the material of the translucent member, for example, a resin can be used. Examples of the resin that can be used for the translucent member include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and modified resins thereof. It is preferable to use an epoxy resin as the material of the translucent member because the strength of the light emitting device can be improved as compared with the case where the silicone resin is used. In addition, silicone resin and modified silicone resin are
It is preferable because it has excellent heat resistance and light resistance. The translucent member may contain wavelength conversion particles and / or diffuse particles.

(Wavelength conversion particles)
The wavelength conversion particles absorb at least a part of the primary light emitted by the light emitting element and emit secondary light having a wavelength different from that of the primary light. As the wavelength conversion particle, one of the following specific examples can be used alone.
Alternatively, two or more types can be used in combination. When the translucent member includes a plurality of wavelength conversion layers, the wavelength conversion particles contained in each wavelength conversion layer may be the same or different.

Examples of the wavelength conversion particles that emit green light include yttrium aluminum garnet-based phosphors (for example, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce) and lutetium aluminum garnet-based phosphors (for example, Lu ₃ (Al, Ga)). ₅ O ₁₂ : Ce), terbium aluminum garnet fluorescent material (for example, Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce) type fluorescent material, silicate type fluorescent material (for example, (Ba, Sr) ₂ SiO ₄ : Eu ), Chlorosilicate-based fluorescent material (
For example, Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu), β-sialon-based phosphor (for example, Si ₆ ).
_-Z Al _z O _z N _8-z : Eu (0 <z <4.2)), SGS-based phosphor (for example, SrGa)
₂ S ₄ : Eu), alkaline earth aluminate-based phosphor (for example, (Ba, Sr, Ca) Mg _x
Al ₁₀ O _{16 + x} : Eu, Mn (however, 0 ≦ X ≦ 1)) and the like can be mentioned. As the wavelength conversion particles for yellow emission, α-sialon-based phosphors (for example, _Mz (Si, Al) ₁₂ (O, N))
₁₆ (where 0 <z ≦ 2 and M is a lanthanide element excluding Li, Mg, Ca, Y, and La and Ce) and the like. In addition, among the wavelength conversion particles that emit green light, there are also wavelength conversion particles that emit yellow light. Further, for example, in the yttrium aluminum garnet-based phosphor, the emission peak wavelength can be shifted to the long wavelength side by substituting a part of Y with Gd, and yellow emission is possible. In addition, some of these are wavelength conversion particles capable of emitting orange light. As the wavelength conversion particles that emit red light, nitrogen-containing calcium aluminosilicate (CAS)
Examples thereof include N or SCASN) -based fluorophore (for example, (Sr, Ca) AlSiN ₃ : Eu), SLAN fluorophore ( _SrLiAl 3N ₄ : Eu), and the like. In addition, it is a manganese-activated fluoride-based phosphor (a phosphor represented by the general formula (I) A ₂ [M _1-a Mn _a F ₆ ] (however, in the above general formula (I), A is At least one element selected from the group consisting of K, Li, Na, Rb, Cs and NH4, and M is at least one element selected from the group consisting of Group ₄ elements and Group 14 elements. For a, 0 <a <0.2 is satisfied)). A typical example of this manganese-activated fluoride-based phosphor is a manganese-activated potassium fluorinated phosphor (
For example, there is K ₂ SiF ₆ : Mn).

(Diffuse particles)
Examples of the diffused particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide and the like. As the diffused particles, one of these can be used alone, or two or more of them can be used in combination. In particular, silicon oxide having a small coefficient of thermal expansion is preferable. Further, by using nanoparticles as diffusion particles, it is possible to increase the scattering of light emitted by the light emitting element and reduce the amount of wavelength conversion particles used. The nanoparticles have a particle size of 1 nm or more and 1
Particles of 00 nm or less are used. Further, the "particle size" in the present specification is defined by, for example, _D50 .

(Light guide member 50)
The light guide member is a member that fixes a light emitting element and a translucent member and guides light from the light emitting element to the translucent member. Examples of the base material of the light guide member include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and modified resins thereof. It is preferable to use an epoxy resin as the material of the light guide member because the strength of the light emitting device can be improved as compared with the case where the silicone resin is used. Further, the silicone resin and the modified silicone resin are preferable because they are excellent in heat resistance and light resistance. The light guide member may contain wavelength conversion particles and / or diffusion particles similar to those of the translucent member described above.

(Conductive adhesive member 60)
The conductive adhesive member is a member that electrically connects the element electrode of the light emitting element and the first wiring. Conductive adhesive members include bumps such as gold, silver and copper, metal powders such as silver, gold, copper, platinum, aluminum and palladium and metal pastes containing resin binders, tin-bismuth type, etc.
Any one of tin-copper, tin-silver, gold-tin and other solders, and low melting point metal and other brazing materials 1
Can be used.

The light emitting device according to the embodiment of the present invention includes a backlight device for a liquid crystal display, various lighting fixtures, a large display, various display devices such as advertisements and destination guides, a projector device, a digital video camera, a facsimile, and a copier. , Can be used as an image reading device in a scanner or the like.

1000A Light source device 1000, 1001, 2000, 2001 Light emitting device 5000, 5001 Support board 10 Board 11 Base material 12 1st wiring 13 2nd wiring 14 3rd wiring 15 Via
151 4th wiring
152 Filling member 16 Indentation 18 Insulating film 20 Light emitting element 30 Translucent member 40 Reflective member 50 Light guide member 60 Conductive adhesive member

Claims (6)

The front extending in the longitudinal direction and the lateral direction orthogonal to the longitudinal direction, the back surface located on the opposite side of the front surface, the upper surface adjacent to the front surface and orthogonal to the front surface, and the position on the opposite side of the upper surface surface. A base material having a lower surface, a plurality of recesses opening in the back surface and the lower surface, a first wiring arranged in the front surface, and each of the plurality of recesses electrically connected to the first wiring. A step of preparing a light emitting device including a substrate having a second wiring arranged in a light emitting element, and at least one light emitting element electrically connected to the first wiring and mounted on the first wiring. When,
A step of preparing a support substrate including a support base material, a first wiring pattern including a joint region on the upper surface of the support base material, and an insulating region surrounding the joint region.
A step of arranging the solder on the bonding region and the insulating region so that the maximum width of the solder located on the insulating region is larger than the maximum width of the solder located on the bonding region in the top view.
In the top view, the step of mounting the light emitting device on the support substrate with the solder separated from the second wiring located near the lower surface.
A step of heating and melting the solder to join the second wiring of the light emitting device and the joining region of the support substrate.
A method of manufacturing a light source device including. The method for manufacturing a light source device according to claim 1, further comprising an adhesive resin for adhering the substrate and the support substrate. The method for manufacturing a light source device according to claim 2, wherein in the step of joining the second wiring of the light emitting device and the bonding region of the support substrate, the adhesive resin is cured. The method for manufacturing a light source device according to claim 2 or 3, wherein the adhesive resin is located between the plurality of recesses. The method for manufacturing a light source device according to any one of claims 1 to 4, wherein the maximum width of the recess is narrower than the maximum width of the joint region in a top view. The method for manufacturing a light source device according to any one of claims 1 to 5, wherein the depth on the lower surface side of each of the plurality of recesses is larger than the depth on the upper surface side.

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