JP7102898B2 - Thin-film masks, thin-film manufacturing equipment, thin-film manufacturing methods, and organic semiconductor device manufacturing methods - Google Patents

Description

The present invention relates to a vapor deposition mask, a thin film manufacturing apparatus, a method for manufacturing a thin film, and a method for manufacturing an organic semiconductor device.

In the manufacture of organic EL devices, in order to form the organic layer or cathode electrode of the organic EL device, elongated slit-shaped openings are arranged in one direction at minute intervals in the region where the vapor-deposited material is to pass toward the object to be deposited. In addition, a metal vapor deposition mask is used. Since the vapor deposition mask performs vapor deposition in a state of being superposed on the vapor deposition object, if the size of the vapor deposition object is large, it is necessary to prepare a large size vapor deposition mask accordingly. When the size of the thin-film deposition mask increases, bending occurs due to bending stress due to its own weight, especially near the center of the thin-film deposition mask, and a portion where the vapor deposition mask and the object to be deposited adhere to each other and a portion where a gap is formed between the two are mixed. This causes a problem that the shape accuracy of the thin-film deposited thin film is lowered. Further, it is technically difficult to accurately form a large number of openings in a large-sized thin-film deposition mask, and there is also a problem that the yield of the thin-film deposition mask is lowered.

As a method of suppressing an increase in the size of the thin-film deposition mask, for example, as in Patent Document 1, the substrate to be vapor-deposited is relatively moved while maintaining a certain gap with respect to the patterning slit sheet which is the thin-film deposition mask. A so-called small mask scanning method, in which vapor deposition is continuously performed, has been proposed. In this method, by using a patterning slit sheet having a width dimension narrower than the width of the material to be deposited, it is possible to deposit on a large material to be deposited.

JP 2011-140717

Although the thin-film deposition mask can be miniaturized by this method, it is necessary to keep the gap between the thin-film deposition mask and the thin-film deposition object constant during vapor deposition in order to move the vapor-deposited material relative to each other. Since the vapor deposition mask cannot be adhered to the object to be deposited, the vapor deposition mask itself requires higher rigidity than the method of adhering to the object to be deposited. The thin-film deposition mask in which a large number of slit-shaped openings are formed tends to bend in the vicinity of the center due to its own weight, which makes it difficult to produce a high-definition thin film on the object to be deposited.

An object of the present invention is to provide a vapor deposition mask capable of producing a high-definition thin film. Another object of the present invention is to provide a thin film manufacturing apparatus capable of manufacturing a high-definition thin film and a method for manufacturing a thin film. Another object of the present invention is to provide a method for manufacturing an organic semiconductor device capable of manufacturing a high-definition organic semiconductor device.

The present disclosure is a thin-film deposition mask used for vapor deposition on an object to be deposited, which penetrates between a first surface, a second surface facing the first surface, and the first surface and the second surface. A plurality of openings, a first group having the plurality of openings, and a second group having the plurality of openings are provided, and the vapor deposition mask and the object to be deposited are the vapor deposition mask. The second opening group can move relatively along the first direction in the first surface while providing a gap between the first surface and the object to be vapor-deposited. This is a first example of a thin-film deposition mask that is arranged diagonally opposite the first opening group.

The present disclosure is the vapor deposition mask of the second example according to the first example satisfying the following formula (1).
Equation (1) L ≤ P ₁ + P ₂
P ₁ : When the direction orthogonal to the first direction in the first plane is the second direction, the average distance between the openings in the first opening group in the second direction P ₂ : the second. The average distance L of the openings in the opening group in the second direction: the opening closest to the second opening group in the first opening group and the first opening group in the second opening group. Distance from the nearest opening in the second direction

The present disclosure is the vapor deposition mask of the third example according to the first example satisfying the following formula (2) when the direction orthogonal to the first direction in the first plane is set as the second direction. ..
Equation (2) [(P ₁ + P ₂ ) ÷ 2)] × 0.5 ≤ L ≤ [(P ₁ + P ₂ ) ÷ 2] × 1.5

In the present disclosure, when the direction orthogonal to the first direction in the first plane is set as the second direction, the first opening group and the second opening group are zigzag along the second direction. The vapor deposition mask of the fourth example according to any one of the first to third examples, which is arranged.

In the present disclosure, when the direction orthogonal to the first direction in the first plane is set as the second direction, the vapor deposition mask further includes a third opening group having a plurality of the openings, and the first. The third opening group is arranged diagonally opposite the second opening group along the second direction and on a side different from the first opening group, from the first example to the first. It is a vapor deposition mask of the fifth example described in any one of the three examples.

In the present disclosure, the vapor deposition mask further comprises a fourth opening group having the plurality of openings, the fourth opening group diagonally opposite the third opening group along the second direction. The vapor deposition mask of the sixth example according to the fifth example, which is present and is arranged on a side different from the second opening group.

In the present disclosure, the seventh embodiment according to any one of the first to sixth examples, wherein the vapor deposition mask includes a frame member, and the frame member is arranged in an outer peripheral region of the vapor deposition mask. An example vapor deposition mask.

In the present disclosure, the vapor deposition mask includes a first partial mask and a second partial mask, the first partial mask has the first opening group, and the second partial mask has the second opening group. The vapor deposition mask of the eighth example according to any one of the first to sixth examples.

In the present disclosure, the vapor deposition mask includes a support member having a plurality of openings, and the first partial mask and the second partial mask are arranged so as to overlap the openings of the support member. 9th example of the vapor deposition mask described in the above example.

The present disclosure is the vapor deposition mask of the tenth example according to the eighth example or the ninth example, wherein the vapor deposition mask includes a frame member and is arranged in the outer peripheral region of the vapor deposition mask.

In the present disclosure, the vapor deposition mask comprises a support member having a plurality of openings, and the first partial mask and the second partial mask are detachably arranged from the support member, the ninth example or It is the vapor deposition mask of the eleventh example described in the tenth example.

In the present disclosure, the vapor deposition mask according to any one of the first to eleventh examples, wherein the vapor deposition mask has a laminated structure of a resin layer made of an organic polymer and a metal layer made of metal. It is a mask.

The present disclosure is a thin film manufacturing apparatus for producing a thin film by depositing a vapor-deposited material on an object to be vapor-deposited. A discharge portion to be discharged toward the surface, a connecting portion to which the vapor deposition mask is detachably fixed, and the thin film manufacturing apparatus and the vapor deposition material, the first surface of the thin film deposition mask and the vapor deposition material. This is the thin film manufacturing apparatus of the thirteenth example, which is composed of a moving portion that moves relative to each other along the first direction in the first surface while providing a gap between the two.

The present disclosure is a method for producing a thin film, in which a thin-film vapor deposition material is passed through the plurality of openings of the thin-film deposition mask according to any one of the first to twelfth examples to be vapor-deposited on the vapor-deposited material. A thin-film deposition step is provided, in which the vapor-deposited mask and the object to be deposited are placed on the first surface of the vapor-deposited mask while providing a gap between the first surface of the vapor-deposited mask and the object to be vapor-deposited. This is the method for producing a thin film of the 14th example, in which the film is relatively moved along one direction.

The present disclosure is a method for manufacturing an organic semiconductor device, which is a method for manufacturing an organic semiconductor device according to a fifteenth example, which uses the method for manufacturing the thin film of the fourteenth example.

According to the present disclosure, it is possible to provide a thin-film deposition mask capable of producing a high-definition thin film with sufficient rigidity. Further, it is possible to provide a thin film manufacturing apparatus capable of manufacturing a high-definition thin film and a method for manufacturing a thin film. Further, it is possible to provide a method for manufacturing an organic semiconductor device capable of manufacturing a high-definition organic semiconductor device.

It is a perspective view explaining the structure of an example of the thin film manufacturing apparatus of 1st Embodiment. It is a top view explaining an example of the vapor deposition mask of 1st Embodiment. It is a top view explaining an example of the thin-film deposition mask of the prior art. It is a top view and a cross-sectional view explaining an example of the thing to be vapor-deposited. FIG. 5 is an enlarged plan view of the upper end of the vapor deposition mask of FIG. It is a perspective view explaining the state which attaches the vapor deposition mask to the thin film manufacturing apparatus. It is a perspective view explaining the state in which a thin-film deposition mask and an object to be vapor-deposited are relatively moving. It is a top view explaining the modification (1) of the vapor deposition mask of 1st Embodiment. It is a top view explaining the modification (2) of the vapor deposition mask of 1st Embodiment. It is a top view explaining the modification (3) of the vapor deposition mask. It is a top view explaining the modification (4) of the vapor deposition mask. It is a top view explaining the modification (5) of the vapor deposition mask. It is an enlarged plan view of the upper end of the vapor deposition mask of FIG. It is a plan view and the sectional view explaining the modification (6) of the vapor deposition mask. It is a top view explaining the modification (7) of the vapor deposition mask. It is a top view explaining the modification (8) of the vapor deposition mask. It is a top view explaining the modification (8) of the vapor deposition mask.

Hereinafter, an example of the vapor deposition mask, the thin film manufacturing apparatus, and the like of the present disclosure will be described with reference to the drawings and the like. However, the vapor deposition mask, the thin film manufacturing apparatus, and the like of the present disclosure are not limited to this example and the embodiments described later.

Each figure shown below is schematically shown, and the size and shape of each part are exaggerated as appropriate for easy understanding. In addition, hatching showing a cross section of the member is omitted as appropriate in each drawing. Numerical values such as dimensions of each member and material names described in the present specification are examples of embodiments, and the present invention is not limited to these, and can be appropriately selected and used. In the present specification, terms that specify shapes and geometric conditions, such as parallel, orthogonal, and vertical, are intended to include substantially the same state in addition to their strict meanings.

1. 1. 1st Embodiment (a) Thin film manufacturing apparatus FIG. 1 is a perspective view schematically showing a structure of an example of the thin film manufacturing apparatus 200 of the present disclosure. The thin film manufacturing apparatus 200 includes a vapor deposition mask 100, a connecting portion 220, and a discharging portion 215. The thin-film mask 100 is detachably fixed to the connecting portion 220. The discharge unit 215 transfers the vapor deposition source 210 for sublimating or evaporating the vapor deposition material 230, the vapor deposition nozzle 212 for discharging the sublimated or evaporated vapor deposition material 230 toward the vapor deposition mask 100, and the vapor deposition nozzle 212 to the vapor deposition source 210. It is composed of a vapor deposition nozzle mounting portion 211 for fixing the vapor deposition nozzle. The thin-film deposition source 210 is composed of a thin-film deposition material 230, a crucible 213, and a heater 214.

In FIG. 1, the Z axis is taken in the direction of the normal line with respect to the main surface of the thin-film deposition mask 100, the direction from the thin-film deposition mask 100 to the object to be deposited 300 is the + Z direction, and the opposite direction is the −Z direction. The + Z direction and / or the −Z direction may be simply referred to as the Z direction. Further, when the thin-film deposition mask 100 moves relative to the thin-film deposition mask 100 while being separated by a certain distance, a Y-axis is taken in the relative movement direction of the thin-film deposition mask 100 in the main surface of the thin-film deposition mask 100. The + Y direction and the opposite direction are the -Y direction. The + Y direction and / or the −Y direction may be simply referred to as the Y direction. Further, the X axis is taken in the direction orthogonal to the Y direction in the main surface of the vapor deposition mask 100, and in FIG. 1, the front direction is the + X direction and the opposite direction is the −X direction. The + X direction and / or the −X direction may be simply referred to as the X direction.

The crucible 213 of the vapor deposition source 210 houses the vapor deposition material 230 inside, and the vapor deposition material 230 is vaporized and released by heating the heater 214. A vapor deposition nozzle mounting portion 211 is fixed to the vapor deposition source 210, and a plurality of vapor deposition nozzles 212 are fixed to the vapor deposition nozzle mounting portion 211 in an arrangement arranged in a line along the Y direction. The heated and released thin-film deposition material 230 is discharged through the plurality of thin-film deposition nozzles 212 in a direction opposite to that of the thin-film deposition source 210.

The main surface of the vapor deposition nozzle mounting portion 211 on the vapor deposition nozzle 212 side is arranged so as to face the main surface of the vapor deposition mask 100 fixed to the connecting portion 220 on the vapor deposition nozzle 212 side, and the vapor deposition nozzle 212 discharges. The thin-film deposition material 230 is arranged so as to face the thin-film deposition mask 100. However, the main surface of the vapor deposition nozzle mounting portion 211 does not have to be arranged parallel to the main surface of the vapor deposition mask 100, so that the discharge angle of the vapor deposition material 230 is perpendicular to the main surface of the vapor deposition nozzle mounting portion 211. It is also not necessary that the vapor deposition nozzle 212 is arranged. Further, the discharge angle of the vapor deposition material 230 may be the same or different for each vapor deposition nozzle 212.

The thin film manufacturing apparatus 200 is a moving unit (not shown) for relatively moving the thin film-deposited object 300 from which the thin film is manufactured from the −Y direction to the + Y direction while maintaining a relationship of being separated from the vapor deposition mask 100 in the + Z direction. It has. The moving portion is not particularly functionally limited as long as it has a mechanism for moving the vapor-deposited object 300 relative to the thin-film deposition mask 100 at a desired speed without changing the distance between the vapor-deposited mask 100 and the vapor-deposited object 300. For example, a mechanism using a stepping motor or a servomotor may be used. As a method of relatively moving the vapor-deposited object 300 with respect to the thin-film deposition mask 100, a method of fixing the thin film manufacturing apparatus 200 and moving the vapor-deposited object 300 is common, but conversely, the thin-film deposition object 300 is fixed. The thin film manufacturing apparatus 200 may be moved, or both may be moved separately and in opposite directions to each other.

The thin-film deposition mask 100 is provided with a plurality of slit-shaped openings 110 having a shape elongated in the Y direction. The opening 110 penetrates between the first surface 100a, which is the main surface of the vapor deposition mask 100 on the + Z direction side, and the second surface 100b, which is the main surface of the vapor deposition mask 100 on the −Z direction side. An aggregate of a plurality of openings 110 arranged side by side in the X direction is defined as an opening group. For example, in FIG. 1, an opening group 121 composed of eight openings 110 arranged side by side along the X direction is arranged on the −Y direction side and the −X direction side of the vapor deposition mask 100. .. Similarly, the opening group 122 composed of eight openings 110 is diagonally opposite the opening group 121, the opening group 123 is diagonally opposite the opening group 122, and the opening group 123 is diagonally opposite. An opening group 124 is arranged opposite.

The direction in which the object to be deposited 300 is relatively moved with respect to the vapor deposition mask 100 within the first surface of the vapor deposition mask 100 is the first direction, and the direction within the first surface and orthogonal to the first direction is the first direction. Two directions. In the present embodiment, the first direction coincides with the Y direction and the second direction coincides with the X direction, but this relationship can also change when the coordinate system is changed. For example, when the shape of the vapor deposition mask when viewed in a plan view from the Z direction is a parallel quadrilateral with internal angles of 45 degrees and 135 degrees, the angle formed by the X axis in FIG. 1 with the Z axis is 90. It is possible to select the XYZ coordinate system so that the angle is 45 degrees or 135 degrees instead of 90 degrees, but in that case, the first direction is the same as the Y direction. However, the second direction is not the X direction, but the direction that forms 90 degrees with the Z axis and the Y axis. Similarly, in the XYZ coordinate system in which the Y-axis is taken differently, the first direction may not be the Y direction.

(B) Vapor deposition mask The vapor deposition mask 100 will be described. FIG. 2 is a plan view schematically showing the vapor deposition mask 100. The thin-film deposition mask 100 is provided with a total of 32 slit-shaped openings 110 having a shape elongated in the Y direction. On the −Y direction side and the −X direction side of the vapor deposition mask 100, an opening group 121 composed of eight openings 110 arranged side by side along the X direction is arranged. On the + Y direction side and the + X direction side of the opening group 121, an opening group 122 composed of eight similarly arranged openings 110 is formed adjacent to each other. Similarly, the opening group 123 is formed adjacent to the −Y direction side and the + X direction side of the opening group 122, and the opening group 124 is formed on the + Y direction side and the + X direction side of the opening group 123. It is formed adjacent to each other.

When the cross section of the vapor deposition mask 100 cut by a plane perpendicular to the first direction is viewed, an aggregate of openings in which cross sections of through portions appear adjacent to each other in the second direction are regarded as one group of openings. Therefore, the range and the arrangement location of each opening group in the vapor deposition mask 100 can be specified. For example, in FIG. 2, when the cross sections of the vapor deposition masks 100 are sequentially cut along the plane perpendicular to the Y axis from the −Y direction side to the + Y direction side, they are first adjacent to each other on the X direction side. The cross sections of the eight openings can be confirmed at one location each on the −X direction side and the + X direction side. The former is the opening of the opening group 121, and the latter is the opening of the opening group 123. The opening of the opening group 121 closest to + X along the second direction and the opening of the opening group 123 closest to -X along the second direction are separated from each other by another opening group 122. Because of the presence of eight openings, they are not adjacent in the second direction. When there are openings that are not adjacent to each other in the second direction, it is considered that each of them is included in another group of openings.

Similarly, when the cross section of the vapor deposition mask 100 is cut in a plane perpendicular to the Y axis in sequence toward the + Y direction side, it is on the + X direction side of the opening group 121 and is on the + X direction side, and the opening group. It is possible to confirm one cross section of each of the eight openings adjacent to each other at the position on the −X direction side of 123 and the position on the + X direction side of the opening group 123. The former is the opening of the opening group 122, and the latter is the opening of the opening group 124. The opening of the opening group 122 closest to + X along the second direction and the opening of the opening group 124 closest to -X along the second direction are separated from each other by the opening group 123. Because of the presence of eight openings, they are not adjacent in the second direction. Therefore, the opening group 122 and the opening group 124 are considered to be different opening groups.

In line with this idea, the presence or absence of an opening group is confirmed by taking the patterning slit sheet of Patent Document 1 as an example. FIG. 3 is a plan view showing a vapor deposition mask 109 called a patterning slit sheet. In the vapor deposition mask 109, a slit-shaped opening 113 having the same shape and elongated in the Y direction, which is called a patterning slit, is provided in the X direction. A plurality of them are provided along the above. When looking at the cross section of the vapor deposition mask 109 cut along the plane perpendicular to the Y axis from the −Y direction side to the + Y direction side, first of all, 32 openings adjacent to each other on the X direction side. The cross section can be confirmed. Further, since the 32 openings 113 are adjacent to each other in the second direction, the 32 openings form one opening group 149. Even when the cross section of the vapor deposition mask 109 is cut in a plane perpendicular to the Y axis in sequence toward the + Y direction side, the cross section of another opening does not appear. It can be confirmed that there is only one opening group.

The opening group 122 of FIG. 2 is not arranged along the first direction and is not arranged along the second direction with respect to the opening group 121. On the first surface of the vapor deposition mask, when a quadrangle having the smallest area including all the openings included in the opening group is virtualized, and the centroid of the quadrangle is the center of the opening group, the first direction is set. Openings 121 and 122 on a straight line from the first direction to the second direction with an angle of 0 degrees, where the minimum angle formed by the first direction is greater than 0 degrees and less than 90 degrees, for example 45 degrees. The center of is placed. From this, the opening group 122 is arranged diagonally opposite to the opening group 121. On the contrary, the opening group 121 is also arranged diagonally opposite to the opening group 122.

Similarly, the opening group 123 is arranged diagonally opposite to the opening group 122, and the opening group 122 is also arranged diagonally opposite to the opening group 123. The opening group 124 is arranged diagonally opposite to the opening group 123, and the opening group 123 is also arranged diagonally opposite to the opening group 124.

When the opening group 121 is the first opening group and the opening group 122 is the second opening group, the vapor deposition mask 100 of the present disclosure has a plurality of opening groups in which a plurality of openings are arranged along the second direction. The second opening group is arranged diagonally opposite to the first opening group along the first direction. At this time, in the vapor deposition mask 100, the regions where the openings are not formed are present as an arrangement opposite to the arrangement of the openings. For example, when the opening group 121 is the first opening group and the opening group 122 is the second opening group, the + Y direction side of the opening group 121 and the −X direction side of the opening group 122 are There is a region where there are no openings or groups of openings. Further, there is a region in which the opening or the opening group does not exist on the −Y direction side of the opening group 122 and also on the + X direction side of the opening group 121. The region where these two openings or the opening group does not exist exists in an arrangement opposite to the positional relationship between the opening group 121 and the opening group 122. When the opening group 122 is the first opening group and the opening group 123 is the second opening group, or when the opening group 123 is the first opening group and the opening group 124 is the second opening group. Is the same.

In the above, the region on the + Y direction side of the opening group 121 and the −X direction side of the opening group 122 and the region on the −Y direction side of the opening group 122 and the + X direction side of the opening group 121 are , It does not necessarily have to be an area where there are no openings or groups of openings. For example, an opening group having a smaller opening area ratio, which is a ratio of the total area of the openings to the area of the opening group, than the openings groups 121 and 122 adjacent to the first direction and the second direction, that is, the arrangement density of the openings is sparse. A group of openings such as the above may be arranged. This point will be described later as a modification.

Each opening group of the vapor deposition mask 100 is arranged diagonally opposite to the other, and at the same time, a straight line passing through a substantially intermediate point between the opening group 121 and the opening group 122 parallel to the second direction. The opening group 121 is arranged on the −Y direction side with respect to the straight line, and the opening group 122 adjacent to the opening group 121 is arranged on the + Y direction side with respect to the straight line. The opening group 123 adjacent to the opening group 122 is arranged on the −Y direction side with respect to the straight line, and the opening group 124 adjacent to the opening group 123 is arranged on the + Y direction side with respect to the straight line. .. In this way, the openings adjacent to each other are sequentially arranged in the −Y direction side, the + Y direction side, the −Y direction side, the + Y direction side, and the left and right along the first direction with respect to the straight line parallel to the second direction. The openings groups 121, 122, 123, and 124 are arranged in a zigzag manner along the second direction because they are sequentially interchanged.

At this time, in the vapor deposition mask 100, the openings in which the openings in which the openings are not formed or in which the arrangement density of the openings is sparser than those in the zigzag arrangement are formed in the zigzag arrangement. It exists as a zigzag sequence, which is the reverse sequence of the group sequence. For example, in the present embodiment, when the opening groups 121, 122, 123, and 124 are in a zigzag arrangement, the + Y direction side of the opening group 121, the −X direction side of the opening group 122, and the opening group 122. -Y direction side and + X direction side of opening group 121, + Y direction side of opening group 123, -X direction side of opening group 124, and -Y direction side of opening group 124, and On the + X direction side of the opening group 123, there is a region in which the opening and the opening group do not exist.

A region where there are no openings or groups of openings, or a group of openings where the arrangement density of the openings is sparse, is as a zigzag arrangement opposite to the zigzag arrangement of the groups 121, 122, 123, and 124. It will exist. By having such a region where the opening group is not formed or an opening group in which the arrangement density of the openings is sparse, the rigidity of the vapor deposition mask 100 is further increased, and the vapor deposition mask 100 is the object to be deposited. Even if it is arranged with a gap between it and 300, it can be further made less likely to be distorted. As a result, it is possible to produce a thin film on the deposited material 300 with higher definition.

In the vapor deposition mask 100 of the present embodiment, each opening group is arranged diagonally along the X direction, but the vapor deposition mask is provided only when each opening group is arranged diagonally along the X direction. Instead, they may be arranged diagonally along the Y direction. For example, the arrangement of the opening groups 121 and 122 is as shown in FIG. 2, but the opening group 123 is arranged on the + Y direction side and the −X direction side with respect to the opening group 122, and the openings are arranged. The group 124 may be arranged on the + Y direction side with respect to the opening group 123 and on the + X direction side. Further, in the area between the openings arranged diagonally opposite to each other, an opening group in which the opening or the opening group does not exist, or an opening group in which the arrangement density of the openings is sparse is provided. You may. Also in this case, as described above, the rigidity of the thin-film deposition mask 100 is increased, and even if the thin-film deposition mask 100 is arranged with a gap between it and the thin-film deposition object 300, it can be made less likely to be distorted. Further, the openings may be arranged diagonally opposite to each other along a straight line in the first plane forming a constant angle with the X direction and the Y direction.

In the present embodiment, the number of openings formed in the vapor deposition mask 100 is 4, but the number of openings may be 2 or more and 4 or more in order to form an obliquely opposite arrangement. Further, each group of openings has eight openings, but the present invention is not limited to this, and it is sufficient that each group has two or more openings. Further, the plurality of openings may have different numbers of openings. In order for each opening group to have a zigzag arrangement, the number of opening groups may be 3 or more, preferably 4 or more.

In the present embodiment, the shapes and dimensions of the openings included in the openings formed in the vapor deposition mask 100 are shown as the same, but they do not necessarily have to be the same, and a thin film on the vapor-deposited material is formed. Different shapes and dimensions may be used as appropriate according to the lead time required for manufacturing. The same applies to the relationship between the shape and dimensions of the openings contained in one group of openings and the shape and dimensions of the openings contained in the other group of openings.

The thin-film deposition mask 100 of the present embodiment is formed by providing a necessary opening in an integral plate-shaped member by a processing method described later. The method for forming the vapor deposition mask is not limited to this, and different forming methods may be used, including those exemplified in various modifications described later.

As the material of the vapor deposition mask 100, various metal materials or various resin materials can be appropriately used. The metal material can be selected as a material having relatively high rigidity, and examples thereof include stainless steel, iron-nickel alloy, and aluminum alloy. When an Invar material, which is an iron-nickel alloy, is used, deformation due to heat can be suppressed to a low level. When pure iron, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKS steel, Cunico steel, Al—Fe alloy, etc. are used, they can be fixed to the thin film manufacturing equipment by magnetic force. can. By dispersing the magnetic powder in the material, magnetism can be imparted to the vapor deposition mask 100 even when the material itself forming the vapor deposition mask 100 is not a magnetic material.

The resin material can be selected for the purpose of reducing the weight of the vapor deposition mask 100, for example, polyimideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene. Examples thereof include vinyl acetate copolymer resin, ethylene-vinyl alcohol copolymer resin, ethylene-methacrylate copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin and the like.

These openings can be etched, cut, etc., which are the processing methods used for ordinary metal processing, and for resin materials, laser processing, precision press processing, photolitho processing, etc. Can be used. Examples of the etching processing method include a spray etching method in which an etching agent is sprayed from an injection nozzle at a predetermined spray pressure, a dip etching method in which the etching agent is immersed in an etching solution filled with the etching agent, and a spin etching method in which the etching agent is dropped. A wet etching method or a dry etching method using gas, plasma, or the like can be used.

In the present embodiment, a thin-film mask 100 having a necessary opening is manufactured by etching a metal material. First, a resist material is applied to both sides of the metal plate. Next, a mask having a pattern of openings is prepared, and this is placed on each of the resist surfaces on the front and back surfaces of the metal plate to mask the resist. After that, it is exposed by close contact exposure and developed. As a result, a resist pattern is formed on each of the front and back surfaces of the metal plate. Then, this resist pattern is used as an etching resistant mask and etched by a two-step etching method. In the two-stage etching method, a resist pattern is formed on both sides of a metal plate, etching is performed from one side, and then an etching-resistant resin, a so-called backing material, is filled in the formed recesses that do not penetrate. After that, it is a processing method for forming a through hole by etching from the other surface side. In addition, instead of the two-step etching method, a method of simultaneously etching from both sides may be adopted, but from the viewpoint of processing accuracy, it is preferable to use the two-step etching method. After the etching is completed, the resist pattern is washed and removed. As a result, a thin-film mask 100 having a desired opening formed in the metal plate is obtained.

FIG. 4 is a diagram showing a film to be vapor-deposited 300 on which the thin film 310 is formed by the thin film manufacturing apparatus 200. The thin film 310 is obtained by evaporating the vapor-deposited material 230 by the thin-film manufacturing apparatus 200 using the thin-film mask 100 and moving the object to be vapor-deposited 300 relative to the thin-film mask 100 in the first direction. FIG. 4A is a plan view seen from the −Z direction side, and FIG. 4B is a cross-sectional view cut along a plane perpendicular to the Y axis passing through the arrows AA of FIG. 4A. be. In the thin film manufacturing apparatus 200, a large number of thin films 310 having a length close to the width of the object to be deposited 300 in the first direction are arranged along the second direction by using a vapor deposition mask 100 smaller than the area of the object to be deposited 300. Can be manufactured as When an aggregate of eight thin films 310 adjacent to each other along the second direction of the plurality of thin films 310 is formed as a thin film group, each thin film group 321, 322, 323, and 324 correspond to the corresponding openings of the vapor deposition mask 100, respectively. It will be manufactured by groups 121, 122, 123 and 124.

FIG. 5A is an enlarged plan view of the opening groups 121 and 122 of the vapor deposition mask 100 of FIG. The distance between the openings 110 of the opening group 121 in the second direction, that is, the distance between the centers of the openings 110 is 110A, 110B, 110C, 110D, 110E, 110F, 110G, respectively, from the −X direction side. Let the average interval of these intervals be 121ave. Similarly, the interval in the second direction of each opening 110 of the opening group 122 is set to 110H, 110I, 110J, 110K, 110L, 110M, 110N from the −X direction side, respectively, and the average interval of these intervals is 122ave. And. The distance between the opening of the opening group 121 closest to the opening group 122 and the opening of the opening group 122 closest to the opening group 121 is 150.

At this time, when the average interval 121ave is P ₁ , the average interval 122ave is P ₂ , and the interval 150 is L, it is preferable to satisfy the following formula (1).
Equation (1) L ≤ P ₁ + P ₂

By satisfying the above conditions, the distance between two openings arranged diagonally opposite to each other can be set within the range of the sum of the average distances between the openings in both groups. FIG. 5B is a conceptual diagram showing the contents of the equation (1). Assuming that the maximum value of the interval 150 is 150max, 150max is the sum of 121ave and 122ave. That is, the distance between the adjacent openings of the opening group 121 and the opening group 122 falls within the range of the sum of the average opening distance of the opening group 121 and the average opening distance of the opening group 122. As a result, the distance between the thin films formed on the material to be deposited in the second direction does not exceed the sum of the average distances between the openings of the adjacent openings, and a high-definition thin film can be produced with respect to the material to be deposited. Can be done.

Further, more preferably, the following formula (2) may be satisfied.
Equation (2) [(P ₁ + P ₂ ) ÷ 2)] × 0.5 ≤ L ≤ [(P ₁ + P ₂ ) ÷ 2] × 1.5

By satisfying the above, the distance between the two openings arranged diagonally opposite to each other is 0.5 to 1.5 times the average value of the average distance between the openings in both groups. It can be within the double range. FIG. 5C is a conceptual diagram showing the contents of the equation (2). Assuming that the minimum value of the interval 150 is 150 min and the maximum value is 150 max, 150 min is a value of 50% of the average value of 121 ave and 122 ave, and 150 max is a value of 150% of the average value of 121 ave and 122 ave. .. That is, the opening group 121 and the opening group 122 are adjacent to each other within a value range of 50% to 150% of the average value of the opening average spacing of the opening group 121 and the opening average spacing of the opening group 122. There is a space between the openings. As a result, the distance between the thin films formed on the material to be deposited in the second direction does not exceed the range of 50% to 150% of the average of the average distance between the openings of the adjacent openings, and the distance between the thin films and the material to be deposited is not exceeded. , A finer thin film can be produced.

(C) Method for Producing Thin Film A method for producing a thin film 310 on an object to be vapor-deposited 300 will be described using the vapor deposition mask 100 described above. FIG. 6 is a perspective view for explaining a state in which the thin-film deposition mask 100 is attached to the thin film manufacturing apparatus 200, and FIG. 7 is a perspective view for explaining a state in which the thin-film deposition mask 300 is relatively moved with respect to the thin-film deposition mask 100. ..

As shown in FIG. 6, the vapor deposition material 230 is housed in the crucible 213 of the thin film manufacturing apparatus 200, and the vapor deposition mask 100 is fixed to the connecting portion 220. As a result, the main surface of the vapor deposition nozzle mounting portion 211 on the side where the vapor deposition nozzle 212 is fixed and the main surface of the vapor deposition mask 100 on the side facing the vapor deposition nozzle 212 are arranged so as to face each other. By fixing the relative positional relationship with 100, it is possible to accurately produce a thin film on the material to be deposited.

The thin film manufacturing apparatus 200 to which the thin film deposition mask 100 is fixed and the object to be deposited 300 are arranged in a thin film deposition chamber (not shown) in which a reduced pressure atmosphere is maintained. By arranging in such an environment, the straightness of the thin-film deposition material 230 discharged from the thin-film deposition nozzle 212 can be ensured. Next, the vapor deposition material 230 is vaporized by heating the rutsubo 213 to a predetermined temperature by the heater 214, and the vapor deposition material 230 is discharged toward the vapor deposition mask 100 while the path is regulated by the vapor deposition nozzle 212. The thin film manufacturing apparatus 200 is covered with a cover (not shown) so that the vapor deposition material 230 does not leak from a place other than the opening 110 of the vapor deposition mask 100.

Simultaneously with the above operation, as shown in FIG. 7, the main surface of the vapor deposition mask 100 on the vapor deposition mask 100 side and the main surface of the vapor deposition mask 300 on the vapor deposition mask 100 side are separated by a certain distance and are substantially parallel. The object to be deposited 300 is relatively moved in the + Y direction, which is the first direction, with respect to the vapor deposition mask 100, while maintaining the positional relationship. In this way, by moving the thin-film deposition material 300 relative to the thin-film deposition mask 100 in the first direction while releasing the thin-film deposition material 230, the thin-film deposition material 300 is moved in the first direction as shown in FIG. It can be manufactured so that a large number of thin films 310 having a length close to the width of the thin-film film 300 are arranged along the second direction.

The vapor deposition mask can have a certain region where the openings are not formed, or a region of the openings where the arrangement density of the openings is sparse, and the regions are arranged diagonally opposite to each other. It exists as an arrangement opposite to the arrangement of each opening group. Therefore, the rigidity of the vapor deposition mask can be increased, the occurrence of strain can be suppressed, and a high-definition thin film can be produced on the vapor-deposited material.

(D) Method for Manufacturing Organic Semiconductor Device The method for manufacturing an organic semiconductor of the present disclosure is to manufacture an organic semiconductor device using the above-mentioned thin film manufacturing method. As for the method for producing a thin film and the vapor deposition mask used for the method, the above-mentioned method for producing a thin film and the vapor deposition mask can be used as they are, and thus detailed description thereof will be omitted. According to the vapor deposition mask of the present disclosure and the method for producing a thin film using the same, a high-definition thin film can be produced by using the vapor deposition mask with small distortion and suppressed, so that the organic layer of the organic EL element can be produced. , The light emitting layer and the cathode electrode layer can be manufactured with high accuracy.

2. Modifications Various modifications and changes are possible without being limited to the above-described embodiment, which are also within the scope of the present disclosure. Some modifications are given below.

(A) Modification example (1)
FIG. 8 is a plan view of the vapor deposition mask 101 showing one of the modifications of the present embodiment as viewed from the + Z direction. One of the differences from the vapor deposition mask 100 of FIG. 2 is that the vapor deposition mask 101 can be attached to and detached from the partial mask 161 having a plurality of openings 110 and the partial mask 161 arranged in the outer peripheral region thereof. It is composed of a frame member 191. The partial mask 161 is used when the vapor deposition mask main body is composed of a combination of a plurality of main parts, and the partial mask 161 has an opening. The frame member 191 is arranged in the outer peripheral region of the partial mask, and can be attached to and detached from the partial mask, and can also be attached to and detached from the thin film manufacturing apparatus 200.

When the vapor deposition mask 101 includes the partial mask 161 and the frame member 191, the partial mask 161 and the frame member 191 having different functions can be manufactured separately, and the processing load of the vapor deposition mask can be reduced. For example, the frame member 191 is provided with a screw structure, a magnet, a fitting structure, or the like as a mechanism for attaching to the thin film manufacturing apparatus 200, and the partial mask 161 is attached to such a thin film manufacturing apparatus 200. It is possible to prepare a large number of plate materials having only an opening without providing a mechanism. By doing so, the load of designing and processing for providing the attachment mechanism to the thin film manufacturing apparatus 200 for each of the vapor deposition masks in which the arrangement of the openings is changed for each type is reduced.

(B) Modification example (2)
FIG. 9 is a plan view of the vapor deposition mask 102 showing another modification of the present embodiment as viewed from the + Z direction. The vapor deposition mask 102 includes openings that are diagonally opposite and in a zigzag arrangement, and in the region between these adjacent openings, the arrangement density of the openings is higher than the arrangement of the openings of the openings. It also has a group of openings that make it sparse. The vapor deposition mask 102 comprises openings 121, 122, 123 and 124 that are diagonally opposite and also in a zigzag arrangement. In addition to this, the region adjacent to the + Y side of the opening group 121, the region adjacent to the −Y side of the opening group 122, the region adjacent to the + Y side of the opening group 123, and the −Y side of the opening group 124. Each side-adjacent region is provided with openings 121a, 121b, 121c and 121d.

The arrangement density of the openings of the openings groups 121a, 121b, 121c and 121d is sparser than the arrangement density of the openings of the openings groups 121, 122, 123 and 124. For example, on the first surface of the vapor deposition mask, a square having the smallest area including all the openings included in the opening group is assumed, the area of the square is St, and the total area of the openings included in the opening group is summed. Is Ss, and the opening area ratio Rs of the opening group is Rs = Ss / St. The opening area ratio is the placement density of the openings. At this time, for example, the opening groups 121 and 122 are selected as the two opening groups arranged diagonally opposite to each other, and their Rs are set to Rs1 and Rs2, which are adjacent to each other along the first direction and the second direction. For example, the opening group 121a is selected as the opening group to be used, and the Rs of the opening group 121a is set to Rs3. At this time, the opening group 121a preferably satisfies the following formula (3).
Equation (3) Rs3 ≤ (Rs1 + Rs2) / 4

In the formula (3), the opening area ratio of the opening group 121a arranged between the two opening groups 121 and 122 arranged diagonally opposite to each other is the opening area ratio of the opening groups 121 and 122. It shows that it is 50% or less of the average value.

As described above, when the vapor deposition mask 100 has an arrangement density of these opening groups, that is, an opening group having an opening area ratio of 50% or less, as an arrangement opposite to the opening groups arranged diagonally opposite to each other. In the small mask scanning method, even if the thin-film mask 100 is arranged with a gap between it and the thin-film mask 300, distortion can be prevented from occurring. .. As a result, it is possible to produce a thin film on the high-definition film-deposited material 300. In addition, the selection range of the members of the vapor deposition mask can be expanded.

(C) Modification example (3)
FIG. 10 is a plan view of the vapor deposition mask 103a showing another modification of the present embodiment as viewed from the + Z direction. The thin-film deposition mask 103a has a structure in which the arrangement of the openings in the thin-film deposition mask 100 of FIG. 2 is increased by another set toward the first direction. That is, each opening in the vapor deposition mask 100 of FIG. 2 is divided into two along the first direction. The region between openings 129 and 133 along the first direction, the region between openings 130 and 134, the region between openings 131 and 135, and the region between openings 132 and 136. However, it exists as a region where an opening is not formed. Compared with the vapor deposition mask 100 of FIG. 2, the vapor deposition speed is slower by the amount that the opening region is reduced, but the rigidity of the vapor deposition mask can be increased. Therefore, this modification is advantageous when it is desired to produce a finer thin film. The arrangement of the group of openings along the first direction may be 3 or more. Further, instead of the region where the openings are not formed, an opening group may be further provided so that the arrangement density of the openings is sparser than the arrangement of the openings of the opening group.

(D) Modification example (4)
FIG. 11 is a plan view of the vapor deposition mask 103b in which each opening group is sequentially arranged in a stepwise manner in a direction away from each other and diagonally opposite to each other along the first direction and the second direction, as viewed from the + Z direction. be. The thin-film deposition mask 103b does not arrange the openings in the thin-film deposition mask 100 of FIG. 2 in a zigzag manner along the second direction, but arranges them in a staircase pattern. That is, each of the opening groups 137, 138, 139 and 140 is arranged so that the positions of the opening groups 138, 139 and 140 are sequentially moved in the + Y direction, for example, based on the position of the opening group 137. And, they are arranged so as to be sequentially moved in the + X direction.

By arranging each opening group of the vapor deposition mask 103b in a stepped manner in this way, the region where the opening group is not arranged can be further increased, and the rigidity of the vapor deposition mask can be further increased. Also in this modification, instead of the region where the openings are not formed, an opening group may be further provided so that the arrangement density of the openings is sparser than the arrangement of the openings of the opening group.

(E) Modification example (5)
A modified example in which the vapor deposition mask is composed of a plurality of partial masks and a support member that supports them will be described. FIG. 12 is a plan view of a vapor deposition mask 104 having a structure in which a plurality of partial masks including an opening group are fixed to a support member, respectively, as viewed from the + Z direction. The vapor deposition mask 104 includes partial masks 162, 163, 164 and 165, each of which is fixed to the support member 181. Each of the partial masks 162, 163, 164 and 165 includes a group of openings 125, 126, 127 and 128 having a plurality of openings 111, respectively. A plurality of partial masks are supported and fixed at desired positions by the support member 181 to impart rigidity as a vapor deposition mask.

The partial mask 162 includes an opening group 125 having a plurality of openings 111. The partial mask 162 is aligned with and fixed to one of a plurality of mounting openings 170 provided in the support member 181. As a method of attaching the partial mask 162 to the opening 170, a method of having a mating structure with each other and being fixed by fitting, a method of being screwed, a method of being fixed with a magnet, an adhesive, an adhesive or the like, etc. , Any fixing method can be selected. Considering the case where the partial mask is damaged or deformed or the convenience of replacement when switching the product type, it is preferable that the partial mask is a fixing method that can be repeatedly attached to and detached from the support member.

Since it is necessary to pass the thin-film deposition material 230 toward the object to be vapor-deposited 300 without any obstacle, each opening 111 included in the partial mask 162 and the opening 170 of the support member 181 are Z in the thickness direction of the thin-film deposition mask 104. They overlap when viewed from the direction. That is, the support member 181 has a structure that does not block each opening. The same applies to the other partial masks 163, 164 and 165. There is no limit to the number of openings included in each partial mask and the number of openings.

For example, one partial mask may include two or more openings arranged diagonally opposite, and one partial mask may include three or four or more openings arranged in a zigzag pattern. May be good. The arrangement and shape of the openings included in each partial mask may be the same or similar arrangement and shape as in the present modification, or may be different arrangement and shape for each partial mask. The materials of the partial mask and the support member may be the same metal material or the resin material, and the materials of the partial mask and the support member may be different metal materials or different resin materials, respectively. Further, one may be a metal material and the other may be a resin material.

When the partial masks 162, 163, 164 and 165 are fixed to the support member 181 and the openings included in the partial masks are arranged diagonally opposite to each other. That is, when the partial mask 162 is used as the first partial mask and the partial mask 163 is used as the second partial mask, the opening groups 125 and 126 contained therein are arranged diagonally opposite to each other, as in the case of the vapor deposition mask 100 described above. It becomes the first opening group and the second opening group. This is the same even if the partial mask 162 is replaced with the partial masks 163 and 164 and the partial mask 163 is replaced with the partial masks 164 and 165.

Since the vapor deposition mask is composed of a partial mask including each opening group and a support member for fixing the partial mask, the vapor deposition mask for producing a high-definition thin film can be easily processed. When the vapor deposition mask is composed of a partial mask that includes each opening group and a support member that fixes the opening mask, in order to obtain the shape and position accuracy of the opening, each partial mask that is included is included. It suffices to ensure the accuracy of the shape and position of the opening, and it is not necessary to consider the shape and position of the opening included in the other partial mask. The positional accuracy of the openings between the different partial masks can be guaranteed by ensuring the positioning of the partial mask and the support member. For example, the partial mask and the support member may be positioned and fixed with a certain accuracy by having a fitting structure with each other, and a position adjustment function may be added to either the partial mask or the support member. , It may be possible to correct the mutual positional deviation by adjusting this.

When the vapor deposition mask has a structure composed of a partial mask including each opening group and a support member for fixing the partial mask, for example, when a problem occurs in a specific opening, the opening is included. Only a specific partial mask needs to be replaced, and workability and maintainability can be improved. Further, when each partial mask included in the vapor deposition mask is a plurality of partial masks having an opening group composed of the same number of openings, the partial masks are compatible with each other and the arrangements are interchanged. However, since a thin film having the same shape can be produced, the stock of partial masks as spare parts can be reduced.

When the partial mask of this modification is used, it is easy to adjust the external dimensions of the partial mask according to the required rigidity. FIG. 13 is an enlarged plan view of the partial masks 162 and 163 of the vapor deposition mask 104 of FIG. The lower end portion of the partial mask 162, that is, the tip portion 151 in the + X direction can be arranged at a position lower than the upper end portion of the partial mask 163, that is, the tip portion 152 in the −X direction, that is, closer to the + X direction. This means that the adjacent partial masks may overlap when viewed from the second direction.

Since the partial masks of this modification can be arranged diagonally opposite to each other, even if they overlap when viewed from the first direction, they overlap when viewed from the second direction. It can be arranged so that it does not have a positional relationship. Therefore, it is possible to sufficiently secure the distance between the upper end of the partial mask and the adjacent opening, or the distance between the lower end of the partial mask and the adjacent opening, so that the required rigidity as the partial mask can be obtained. Obtainable.

(F) Modification example (6)
Next, a modified example in which the partial mask has a laminated structure of a metal material and a resin material will be described. FIG. 14 is a plan view and a cross-sectional view of the partial mask 166 for explaining the present modification. 14 (a) is a plan view of the partial mask 166 as viewed from the + Z direction, and FIG. 14 (b) is a plane of the partial mask 166 of FIG. 14 (a) perpendicular to the Y axis passing through the arrows BB. It is a cut sectional view seen from the + Y direction. Various metal materials or resin materials can be applied as the material of the member of the vapor deposition mask, but the partial mask 166 of this modification has a laminated structure of the metal material and the resin material.

The partial mask 166 having the opening 112 has a laminated structure of a metal layer 172 made of metal and a resin layer 171 made of a polymer resin. As the material of the metal layer 172, the material exemplified as the metal material of the vapor deposition mask 100 described above can be used, and as the material of the resin layer 171, the resin material similarly exemplified can be used.

The cross-sectional shape of the opening 112 is not particularly limited, and may have, for example, an end face parallel to the Z direction, which is the thickness direction of the partial mask 166. In FIG. 14B, the opening 112 is determined so that both the opening 112b on the metal layer 172 side and the opening 112a on the resin layer 171 side become narrower in the + Z direction, that is, toward the object to be deposited 300. Tapered surfaces 112d and 112c, which are end faces having an inclination of the above, are provided. The tapered surface 112c on the resin layer 171 side is covered with a barrier layer 112e composed of an inorganic oxide, an inorganic nitride, a metal thin film layer, a vapor deposition layer, or the like. This is to suppress the generation of gas from the tapered surface 112c. By giving the end face of the opening a predetermined inclination, it is possible to reduce the risk of shadows forming when the thin film is formed on the material to be deposited.

As a method of forming the partial mask 166 of this modification, for example, the opening 112b of the metal layer 172 and the opening 112a of the resin layer 171 are processed separately in advance, and these are aligned and then joined. There is a way. Only the opening 112b of the metal layer 172 is processed in advance, and this is joined to the resin layer 171 whose opening is not processed, and then a predetermined opening 112a is formed in the resin layer 171 by laser processing or the like. It may be a method of processing. In the latter case, since the opening 112b of the metal layer 172 does not significantly affect the accuracy of thin film formation, it can be processed with relatively rough accuracy, and positioning accuracy is not required when joining the resin layer 171. It is advantageous that the opening 112a can be formed at an accurate position by performing laser processing or the like after joining.

In the small mask scanning method, it is necessary to provide a gap between the first surface of the vapor-deposited mask and the object to be vapor-deposited. Therefore, when the weight of the thin-film mask is heavy, the rigidity is lowered and bending is likely to occur. By forming the partial mask 166 into a laminated structure of a metal layer and a resin layer, the effect of maintaining rigidity by reducing the weight of the entire vapor deposition mask and facilitating processing can be obtained, and thin film deposition is performed in order to manufacture a high-definition thin film. The range of mask material selection and processing method selection can be expanded. In this modification, only the partial mask has a laminated structure, but the support member to which the partial mask is attached and the vapor deposition mask of the above-mentioned integrated plate-shaped member have a laminated structure of a metal layer and a resin layer. Is also possible. In this case as well, the same effect as that of the partial mask can be obtained.

(G) Modification example (7)
Next, a modified example of the vapor deposition mask provided with the partial mask and the support member and the frame member arranged in the outer peripheral region will be described. FIG. 15 is a plan view of a vapor deposition mask 106 in which a plurality of partial masks including an opening group are attached to a support member and a frame member is fixed to an outer peripheral region of the support member as viewed from the + Z direction. be. The partial masks 162, 163, 164 and 165 each include an opening group 125, 126, 127 and 128 having a plurality of openings 111, and each partial mask is detachably attached to a support member 182. Further, a frame member 192 is attached to the outer peripheral region of the support member 182, and the frame member 192 is removable from the support member 182.

The frame member is arranged in the outer peripheral region of the partial mask as in the modification (1), and is a member that can be attached to and detached from the partial mask and at the same time can be attached to and detached from the thin film manufacturing apparatus. As in the example, the member may be arranged in the outer peripheral region of the support member that supports and fixes the partial mask, and can be attached to and detached from the support member and at the same time can be attached to and detached from the thin film manufacturing apparatus.

By providing the frame member 192 as the outer frame of the vapor deposition mask 106, the partial masks 162, 163, 164 and 165 can be attached to the support member 182 in advance, and the setup time of the vapor deposition mask can be shortened.

(H) Modification example (8)
Another modification of the vapor deposition mask in which the vapor deposition mask provided with the partial mask and the support member further arranges the frame member in the outer peripheral region will be described. In FIG. 16A, similarly to the modification (7), a group of openings having a plurality of openings is included in the corresponding partial masks, and the support member to which each partial mask is attached and the outer peripheral region thereof. FIG. 5 is a plan view of the vapor deposition mask 107 provided with the frame member as viewed from the + Z direction.

FIG. 17 is a diagram showing a vapor deposition mask 108 having the same structure as that of FIG. 16A and in which only the number of partial masks is increased.

As shown in FIG. 16A, the vapor deposition mask 107 includes a plurality of opening groups 125, 126, 127 and 128 having a plurality of openings 111, respectively, in the partial masks 162, 163, 164 and 165, respectively. ing. Further, a frame member 193 is attached to the outer peripheral region of the support member 183 to which each of these partial masks is attached. As shown in FIG. 16B, the support member 183 is configured by a grid-like frame structure extending vertically and horizontally. The partial masks 162, 163, 164 and 165 are removable from the support member 183, and the support member 183 is removable from the frame member 193.

With such a configuration, the support member 183 can be easily manufactured by combining a square lumber or a round bar member in addition to the processing method of forming an opening from a plate-shaped member by cutting or the like. The selection range of materials and processing methods can be expanded. Further, the rectangular gaps arranged vertically and horizontally between the grid-like frame structures of the support members 183 can all have the same shape, for example, and the gaps may be a standardized partial mask of a constant size or a partial mask. Any of the dummy members for closing the opening can be fitted and fixed. In this way, the partial mask, the dummy member, and the support member of the grid-like frame structure can be standardized regardless of the type. For example, when thin film production is performed by switching the material to be deposited to a small size one, the opening group 128 is removed and a dummy is used instead of replacing the support member 183 and the frame member 193 in FIG. 16A. It can be easily dealt with by switching such as arranging the member 195.

As shown in FIG. 17, the vapor deposition mask 108 includes a plurality of opening groups 141, 142, 143, 144, 145, 146, 147 and 148 having a plurality of openings 111, and partial masks 167a, 167b and 167c, respectively. , 167d, 167e, 167f, 167g and 167h. Further, a frame member 194 is attached to the outer peripheral region of the support member 184 to which each of these partial masks is attached. Similar to FIG. 16B, the support member 184 is configured by a grid-like frame structure extending vertically and horizontally. Each partial mask is removable from the support member 184, and the support member 184 is removable from the frame member 194.

The thin-film deposition mask 108 also has the same effect as the thin-film deposition mask 107, and even when the object to be deposited is switched to a smaller size one, for example, the partial mask 167d is used without replacing the support member 184 and the frame member 194. , 167h can be removed and a dummy member 195 can be arranged instead.

100, 101, 102, 103a, 103b, 104, 105, 106, 107, 108, 109 Vapor deposition mask 100a First surface 100b Second surface 110, 111, 112, 113 Openings 110A, 110B, 110C, 110D, 110E, 110F, 110G Spacing in the X direction of each opening 110 of the opening group 121 110H, 110I, 110J, 110K, 110L, 110M, 110N Spacing in the X direction of each opening 110 of the opening group 122 112a Opening of the resin layer 171 Part 112b Opening 112c of metal layer 172 Tapered surface 112d of opening 112a of resin layer 171 Tapered surface 112e of opening 112b of metal layer 172 Barrier layers 121, 121a, 121b, 121c, 121d, 122, 123, 124, 125 , 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137, 138, 139, 140, 141, 142, 143, 144, 145, 146, 147, 148, 149 openings Group 121ave Average spacing of each opening 110 of the opening group 121 in the X direction 122ave Average spacing of each opening 110 of the opening group 122 in the X direction 150 With the opening 110 closest to the opening group 122 of the opening group 121 Spacing of opening group 122 from opening 110 closest to opening group 121 151 Lower end of partial mask 162 152 Upper end of partial mask 163 161, 162, 163, 164, 165, 166, 167a, 167b, 167c, 167d, 167e, 167f, 167g, 167h Partial mask 170 Opening 171 Resin layer 172 Metal layer 172a Surface of metal layer 172 opposite to resin layer 171 181, 182, 183, 184 Support members 191, 192, 193, 194 Frame members 195 Dummy member 200 Thin film manufacturing equipment 210 Thin film production equipment 210 Thin film source 211 Thin film nozzle mounting part 212 Vapor deposition nozzle 213 Rutsubo 214 Heater 215 Discharge part 220 Connecting part 230 Vapor deposition material 300 Deposited material 310 Thin film 321 Thin film group 322 opening corresponding to opening group 121 Thin film group 323 corresponding to part group 122 Thin film group 324 corresponding to opening group 123 Thin film group corresponding to opening group 124

Claims (10)

A thin-film mask used to deposit on an object to be deposited.
First side,
The second surface facing the first surface,
A plurality of openings penetrating between the first surface and the second surface,
A first opening group having a plurality of the openings, and a second opening group having the plurality of the openings.
With
The thin-film deposition mask and the thin-film deposition material can move relative to each other along the first direction in the first surface while providing a gap between the first surface of the thin-film deposition mask and the thin-film deposition material.
The second opening group is arranged diagonally opposite to the first opening group along the first direction .
The vapor deposition mask includes a first partial mask and a second partial mask.
The first partial mask has the first opening group, and the second partial mask has the second opening group.
The vapor deposition mask comprises a support member having a plurality of openings.
The first partial mask and the second partial mask are arranged so as to overlap the opening of the support member.
The first partial mask and the second partial mask are arranged so as to be removable from the support member.
When the direction orthogonal to the first direction in the first surface is set as the second direction, the first partial mask and the second partial mask are in an overlapping positional relationship when viewed from the first direction, and The first partial mask and the second partial mask are arranged so that the first partial mask and the second partial mask do not overlap when viewed from the second direction.
A thin-film mask that satisfies the following formula (1) .
Equation (1) L ≤ P ₁ + P ₂
P ₁ : When the direction orthogonal to the first direction in the first plane is the second direction, the average spacing of the openings in the first opening group in the second direction.
P ₂ : Average spacing of the openings in the second opening group in the second direction
L: The distance between the opening closest to the second opening group of the first opening group and the opening closest to the first opening group of the second opening group in the second direction. The vapor deposition mask according to claim 1, which satisfies the following formula (2).
Equation (2) [(P ₁ + P ₂ ) ÷ 2)] × 0.5 ≤ L ≤ [(P ₁ + P ₂ ) ÷ 2] × 1.5
P ₁ : When the direction orthogonal to the first direction in the first plane is the second direction, the average distance of the openings in the first opening group in the second direction P ₂ : the second. The average distance L of the openings in the opening group in the second direction: the opening closest to the second opening group in the first opening group and the first opening group in the second opening group. Distance from the nearest opening in the second direction The vapor deposition mask according to claim 1 or 2 , wherein the first opening group and the second opening group are arranged in a zigzag manner along the second direction. The vapor deposition mask further comprises a third group of openings having the plurality of openings.
Claim 1 or the third opening group is arranged diagonally opposite the second opening group along the second direction and on a side different from the first opening group. The vapor deposition mask according to claim 2 . The vapor deposition mask further comprises a fourth group of openings having the plurality of openings.
According to claim 4 , the fourth opening group is arranged diagonally opposite the third opening group along the second direction and on a side different from the second opening group. The described vapor deposition mask. The vapor deposition mask includes a frame member and has a frame member.
The vapor deposition mask according to claim 5 , which is arranged in the outer peripheral region of the vapor deposition mask. The vapor deposition mask according to any one of claims 1 to 6 , wherein the vapor deposition mask has a laminated structure of a resin layer made of an organic polymer and a metal layer made of metal. A thin film manufacturing device that manufactures a thin film by depositing a thin film material on an object to be deposited.
The vapor deposition mask according to any one of claims 1 to 7 .
A discharge unit that discharges the vapor-deposited material toward the object to be vapor-deposited.
A connecting portion to which the vapor deposition mask is detachably fixed, and
A moving unit that moves the thin film manufacturing apparatus and the thin-film deposition material relative to each other along the first direction in the first surface while providing a gap between the first surface of the thin-film deposition mask and the thin-film deposition material. ,
Thin film manufacturing equipment composed of. It is a thin film manufacturing method.
A vapor deposition step of passing a vapor deposition material through the plurality of openings of the vapor deposition mask according to any one of claims 1 to 7 and depositing the vapor deposition material on the material to be deposited is provided.
In the thin-film deposition step, the vapor-deposited mask and the vapor-deposited material are relative to each other along the first direction in the first surface while providing a gap between the first surface of the thin-film deposition mask and the thin-film deposition material. A method for producing a thin film to be moved. A method for manufacturing organic semiconductor devices
A method for manufacturing an organic semiconductor device, which uses the method for manufacturing a thin film according to claim 9 .

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