JP7180193B2 - Evaporation mask, thin film manufacturing apparatus, thin film manufacturing method, and organic semiconductor element manufacturing method - Google Patents

Description

The present invention relates to a vapor deposition mask, a thin film manufacturing apparatus, a thin film manufacturing method, and an organic semiconductor element manufacturing method.

In the manufacture of an organic EL element, in the formation of the organic layer or cathode electrode of the organic EL element, elongated slit-like openings are arranged in one direction at minute intervals in a region where the vapor deposition material is desired to pass toward the object to be vapor-deposited. Also, a metal vapor deposition mask is used. Since the vapor deposition mask is superimposed on the object to be vapor-deposited, vapor deposition is performed. Therefore, when the size of the object to be vapor-deposited is large, it is necessary to prepare a large-sized vapor deposition mask accordingly. When the size of the vapor deposition mask increases, bending occurs due to bending stress due to its own weight, especially in the vicinity of the center of the vapor deposition mask, resulting in a mixture of a portion where the vapor deposition mask and the object to be vapor-deposited are in close contact and a portion where a gap is created between the two. As a result, there is a problem that the shape accuracy of the deposited thin film is lowered. Moreover, it is technically difficult to precisely form a large number of openings in a large-sized vapor deposition mask, and there is also the problem that the yield of the vapor deposition mask decreases.

As a method for suppressing an increase in the size of the vapor deposition mask, for example, as in Patent Document 1, the substrate, which is the object to be vapor deposited, is relatively moved while maintaining a constant gap with respect to the patterning slit sheet, which is the vapor deposition mask. A so-called small mask scanning method has been proposed in which vapor deposition is performed continuously. In this method, by using a patterning slit sheet having a width dimension narrower than the width of the object to be vapor-deposited, vapor deposition can be performed on a large object to be vapor-deposited.

JP 2011-140717

Although the vapor deposition mask can be made smaller by this method, since the object to be vapor-deposited is relatively moved, it is necessary to maintain a constant gap between the vapor deposition mask and the object to be vapor-deposited during the vapor deposition. Since the vapor deposition mask cannot be brought into close contact with the object to be vapor-deposited, it is necessary to strike a balance between weight reduction and rigidity of the vapor deposition mask itself, as compared with the method in which the vapor deposition mask is brought into close contact with the object to be vapor-deposited. A vapor deposition mask having a large number of slit-like openings tends to bend due to its own weight, especially in the vicinity of the center, making it difficult to manufacture a high-definition thin film on the object to be vapor-deposited.

An object of the present invention is to provide a vapor deposition mask that is less likely to bend due to its own weight and that can produce a high-definition thin film. Another object of the present invention is to provide a thin film manufacturing apparatus capable of manufacturing a thin film with high definition, and a thin film manufacturing method. Further, another object of the present invention is to provide a method for manufacturing an organic semiconductor device capable of manufacturing a high-definition organic semiconductor device.

The present disclosure is a vapor deposition mask used for vapor deposition on an object to be vapor deposited, comprising a first surface, a second surface opposite to the first surface, and penetrating between the first surface and the second surface. and a group of openings having the plurality of openings, wherein the vapor deposition mask and the object to be vapor-deposited have a gap between the first surface of the vapor deposition mask and the object to be vapor-deposited. The vapor deposition mask has a laminated structure portion in which a resin layer made of an organic polymer and a metal layer made of a metal are laminated. and the vapor deposition mask according to the first example, wherein the laminated structure portion has an average density of 1.5 g/cm ³ or more and 7.8 g/cm ³ or less.

In the present disclosure, the thickness of the metal layer of the laminated structure portion along the normal direction of the first surface is defined as a first thickness, and the resin of the laminated structure portion along the normal direction of the first surface The layer according to the first example, wherein the ratio of the second thickness to the first thickness is 0.04 or more and 20.0 or less when the thickness of the layer is the second thickness. It is a vapor deposition mask of a second example.

In the present disclosure, the Young's modulus of the material constituting the metal layer of the laminated structure section is 80.0 Pa or more and 300.0 Pa or less, and the Young's modulus of the material constituting the resin layer of the laminated structure section is It is a vapor deposition mask of the third example described in the second example, which is 2.0 Pa or more and 30.0 Pa or less.

In the present disclosure, the vapor deposition mask includes a support member and a plurality of partial masks detachably fixed to the support member, and the plurality of partial masks each have the opening group. is a vapor deposition mask of a fourth example according to any one of the first to third examples.

In the present disclosure, the laminated structure portion may be the vapor deposition mask of the fifth example described in the fourth example, which is provided on the support member, and the laminated structure portion is provided on the partial mask. , the vapor deposition mask of the sixth example described in the fourth example or the fifth example.

The present disclosure is a thin film manufacturing apparatus that manufactures a thin film by vapor-depositing a vapor deposition material on an object to be vapor-deposited,
The vapor deposition mask according to any one of the first to sixth examples, a release portion for discharging the vapor deposition material toward the object to be vapor-deposited, a connection portion to which the vapor deposition mask is detachably fixed, and relatively moving the thin film manufacturing apparatus and the object to be vapor-deposited along the first direction within the first surface while providing a gap between the first surface of the vapor deposition mask and the object to be vapor-deposited. A seventh example of a thin film manufacturing apparatus comprising a moving part.

The present disclosure is a method for manufacturing a thin film, in which a vapor deposition material is passed through the plurality of openings of the vapor deposition mask according to any one of the first to sixth examples to the vapor deposition object. In the vapor deposition step, the vapor deposition mask and the object to be vapor-deposited are separated from each other within the first surface while providing a gap between the first surface of the vapor deposition mask and the object to be vapor-deposited. This is the eighth example of the thin film manufacturing method, in which the thin film is relatively moved along the first direction.

The present disclosure is a method for manufacturing an organic semiconductor device, which is a method for manufacturing an organic semiconductor device according to a ninth example using the method for manufacturing a thin film described in the seventh example.

According to the present disclosure, it is possible to provide a vapor deposition mask that is less likely to bend due to its own weight and that can produce a high-definition thin film. Further, it is possible to provide a thin film manufacturing apparatus and a thin film manufacturing method capable of manufacturing a high-definition thin film. Furthermore, it is possible to provide a method for manufacturing an organic semiconductor device that can manufacture a high-definition organic semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS It is a perspective view explaining the structure of an example of the thin film manufacturing apparatus of 1st Embodiment. It is a top view explaining an example of the vapor deposition mask of 1st Embodiment. FIG. 3 is a cross-sectional view of the vapor deposition mask of the first embodiment near an opening. It is a top view explaining an example of the vapor deposition mask of a prior art. 1A and 1B are a plan view and a cross-sectional view illustrating an example of an object to be vapor-deposited; FIG. It is a perspective view explaining the state which attaches a vapor deposition mask to a thin film manufacturing apparatus. FIG. 4 is a perspective view illustrating a state in which a vapor deposition mask and an object to be vapor-deposited are relatively moving; It is a top view explaining the modification 1 of the vapor deposition mask of 1st Embodiment. It is a top view explaining the modification 2 of the vapor deposition mask of 1st Embodiment. It is a top view explaining the modification 3 of a vapor deposition mask. 11 is an enlarged plan view of the upper end of the vapor deposition mask of FIG. 10; FIG. 12 is a cross-sectional view of the vicinity of the opening of the partial mask of the vapor deposition mask of FIG. 11; FIG. It is a top view explaining the modification 4 of a vapor deposition mask. It is a top view explaining the modification 5 of a vapor deposition mask.

Hereinafter, an example of a vapor deposition mask, a thin film manufacturing apparatus, and the like according to the present disclosure will be described with reference to drawings and the like. However, the vapor deposition mask, the thin film manufacturing apparatus, and the like of the present disclosure are not limited to this example or the embodiments described later.

Each figure shown below is schematically shown, and the size and shape of each part are appropriately exaggerated for easy understanding. In each figure, hatching indicating a cross section of a member is omitted as appropriate. Numerical values such as dimensions and material names of each member described in this specification are examples as an embodiment, and are not limited to these, and can be appropriately selected and used. In this specification, terms specifying shapes and geometrical conditions, such as parallel, orthogonal, perpendicular, etc., are intended to include substantially the same as well as strictly defined terms.

1. First Embodiment (a) Thin Film Manufacturing Apparatus FIG. 1 is a perspective view schematically showing the structure of an example of a thin film manufacturing apparatus 200 of the present disclosure. A thin film manufacturing apparatus 200 includes a vapor deposition mask 100 , a connection portion 220 and an emission portion 215 . The vapor deposition mask 100 is detachably fixed to the connecting portion 220 . The discharge unit 215 includes a vapor deposition source 210 for sublimating or evaporating the vapor deposition material 230 , a vapor deposition nozzle 212 for discharging the sublimated or vaporized vapor deposition material 230 toward the vapor deposition mask 100 , and the vapor deposition nozzle 212 as the vapor deposition source 210 . It is composed of a vapor deposition nozzle mounting portion 211 for fixing to. A vapor deposition source 210 is composed of a vapor deposition material 230 , a crucible 213 and a heater 214 .

In FIG. 1, the direction of the normal to the main surface of the vapor deposition mask 100 is taken as the Z axis, the direction from the vapor deposition mask 100 to the object to be deposited 300 is the +Z direction, and the opposite direction is the -Z direction. The +Z direction and/or -Z direction may be simply referred to as the Z direction. In addition, when the object 300 to be vapor-deposited moves relative to the vapor deposition mask 100 while being separated from the vapor deposition mask 100 by a constant distance, the direction of relative movement of the object 300 to be vapor-deposited within the main surface of the vapor deposition mask 100 is taken as the Y-axis. The +Y direction is the +Y direction, and the opposite direction is the -Y direction. The +Y direction and/or -Y direction may be simply referred to as the Y direction. Also, the X-axis is taken in the direction perpendicular to the Y-direction within the main surface of the vapor deposition mask 100, and in FIG. 1, the front direction is the +X direction and the opposite direction is the -X direction. The +X direction and/or -X direction may be simply referred to as the X direction.

The crucible 213 of the vapor deposition source 210 accommodates the vapor deposition material 230 inside, and by heating the heater 214, the vapor deposition material 230 is vaporized and discharged. A vapor deposition nozzle mounting portion 211 is fixed to the vapor deposition source 210, and a plurality of vapor deposition nozzles 212 are fixed to the vapor deposition nozzle mounting portion 211 in a row along the Y direction. A vapor deposition material 230 that has been heated and sublimated or evaporated is discharged in a direction opposite to the vapor deposition source 210 through a plurality of vapor deposition nozzles 212 .

The vapor deposition nozzle 212 side main surface of the vapor deposition nozzle mounting portion 211 is arranged to face the vapor deposition nozzle 212 side main surface of the vapor deposition mask 100 fixed to the connecting portion 220 while being separated from the vapor deposition nozzle 212 side. The deposited vapor deposition material 230 is arranged so as to face the vapor deposition mask 100 . However, the main surface of the vapor deposition nozzle mounting portion 211 does not need to be arranged parallel to the main surface of the vapor deposition mask 100, and the emission angle of the vapor deposition material 230 is perpendicular to the main surface of the vapor deposition nozzle mounting portion 211. Also, the vapor deposition nozzle 212 need not be arranged. Also, the emission angle of the vapor deposition material 230 may be the same or different for each vapor deposition nozzle 212 .

The thin film manufacturing apparatus 200 has a moving part (not shown) for relatively moving the target object 300 on which a thin film is to be manufactured from the -Y direction to the +Y direction while maintaining a +Z direction separation relationship with respect to the deposition mask 100. It has The moving part is not particularly limited in function as long as it has a mechanism for relatively moving the deposition target 300 with respect to the deposition mask 100 at a desired speed without changing the distance between the deposition mask 100 and the deposition target 300. For example, it may be a mechanism using a stepping motor or a servomotor. As a method of moving the object 300 to be vapor-deposited relative to the vapor deposition mask 100, it is common to move the object 300 to be vapor-deposited while fixing the thin film manufacturing apparatus 200. The thin film manufacturing apparatus 200 may be moved by moving the thin film manufacturing apparatus 200, or both may be moved separately in opposite directions.

A vapor deposition mask 100 is provided with a plurality of slit-shaped openings 110 elongated in the Y direction. The opening 110 penetrates between the first surface 100a, which is the main surface of the vapor deposition mask 100 on the +Z direction side, and the second surface 100b, which is the main surface of the vapor deposition mask 100 on the −Z direction side. An aggregate of a plurality of openings 110 arranged side by side along the X direction is called an opening group. For example, in FIG. 1, an aperture group 121 composed of eight apertures 110 arranged side by side along the X direction is arranged on the -Y direction side and the -X direction side of the vapor deposition mask 100. . Similarly, an aperture group 122 composed of eight apertures 110 is diagonally opposed to the aperture group 121, an aperture group 123 is diagonally opposed to the aperture group 122, and the aperture group 123 is obliquely opposed. A group of openings 124 are arranged opposite.

A direction in which the object 300 to be deposited is relatively moved with respect to the vapor deposition mask 100 within the first plane of the vapor deposition mask 100 is defined as a first direction, and a direction within the first plane perpendicular to the first direction is defined as a first direction. 2 directions. In this embodiment, the first direction coincides with the Y direction and the second direction coincides with the X direction, but this relationship may change if the coordinate system is changed. For example, when the vapor deposition mask has a shape of a parallelogram with internal angles of 45 degrees and 135 degrees when viewed from the Z direction, the angle formed between the X axis and the Z axis in FIG. It is possible to choose an XYZ coordinate system in which the first direction is the same as the Y direction, although it is possible to choose an XYZ coordinate system in which the angle is 45 degrees or 135 degrees instead of 90 degrees with the Y axis. However, the second direction is not the X direction, but the direction forming 90 degrees with the Z axis and the Y axis. Similarly, in an XYZ coordinate system in which the Y axis is taken differently, the first direction may not be the Y direction.

(b) Vapor Deposition Mask (i) Openings and Groups of Openings The deposition mask 100 will be described. FIG. 2 is a plan view schematically showing the vapor deposition mask 100. FIG. The vapor deposition mask 100 is provided with a total of 32 slit-shaped openings 110 elongated in the Y direction. An aperture group 121 composed of eight apertures 110 aligned along the X direction is arranged on the −Y direction side and the −X direction side of the vapor deposition mask 100 . On the +Y direction side and the +X direction side of the aperture group 121, an aperture group 122 composed of eight similarly arranged apertures 110 is formed adjacently. Similarly, an aperture group 123 is formed adjacent to the aperture group 122 on the −Y direction side and the +X direction side, and an aperture group 124 is formed on the +Y direction side and the +X direction side of the aperture group 123. formed adjacent to each other.

When viewing a cross section of the vapor deposition mask 100 cut along a plane perpendicular to the first direction, a group of openings that are adjacent to each other in the second direction and show cross sections of penetrating portions are regarded as one opening group. , the range and location of each opening group in the vapor deposition mask 100 can be specified. For example, in FIG. 2, when the vapor deposition mask 100 is viewed from the −Y direction side to the +Y direction side and sequentially cut along a plane perpendicular to the Y axis, the cross sections are first adjacent to each other on the X direction side. Cross sections of the eight openings can be confirmed at one point each on the -X direction side and the +X direction side. The former is the opening of the opening group 121 and the latter is the opening of the opening group 123 . Another opening group 122 is provided between the opening of the opening group 121 closest to +X along the second direction and the opening of the opening group 123 closest to −X along the second direction. are not adjacent in the second direction. When there are openings that are not adjacent in the second direction in this way, they are considered to be included in different opening groups.

Similarly, when the vapor deposition mask 100 is directed toward the +Y direction and viewed in cross section along a plane perpendicular to the Y axis, the opening group 121 is on the +X direction side and the opening group At a position on the -X direction side of 123 and a position on the +X direction side of the opening group 123, cross sections of eight openings adjacent to each other can be confirmed at one point each. The former is the opening of the opening group 122 and the latter is the opening of the opening group 124 . Another opening group 123 is provided between the opening of the opening group 122 closest to +X in the second direction and the opening of the opening group 124 closest to -X along the second direction. are not adjacent in the second direction because there are eight openings of . Therefore, the opening group 122 and the opening group 124 are considered to be separate opening groups.

In line with this idea, the patterning slit sheet of Patent Document 1 is taken as an example to confirm the presence or absence of the opening group. FIG. 4 is a plan view showing a vapor deposition mask 106 called a patterning slit sheet. In the vapor deposition mask 106, slit-like openings 113 of the same shape elongated in the Y direction, called patterning slits, are formed in the X direction. Several are provided along the When the vapor deposition mask 106 is sequentially viewed from the −Y direction side to the +Y direction side and cut along a plane perpendicular to the Y axis, first, 32 openings adjacent to each other on the X direction side. A cross section can be confirmed. Also, since the 32 openings 113 are adjacent to each other in the second direction, the 32 openings form one opening group 149 . When the vapor deposition mask 106 is directed toward the +Y direction and the cross sections cut along the plane perpendicular to the Y axis are successively viewed, another cross section of the opening does not appear. It can be confirmed that there is only one opening group.

The opening group 122 in FIG. 2 is not arranged along the first direction and is not arranged along the second direction with respect to the opening group 121 . On the first surface of the vapor deposition mask, when a quadrangle with a minimum area that includes all the openings included in the opening group is assumed, and the centroid of the quadrangle is the center of the opening group, the first direction is Assuming an angle of 0 degrees, the opening groups 121 and 122 are formed on a straight line from the first direction to the second direction with a minimum angle greater than 0 degrees and less than 90 degrees with the first direction, for example, 45 degrees. is located at the center of Thus, the opening group 122 is arranged obliquely to the opening group 121 . Conversely, the opening group 121 is also arranged obliquely to the opening group 122 .

Similarly, the opening group 123 is arranged diagonally with respect to the opening group 122 , and the opening group 122 is also arranged diagonally with respect to the opening group 123 . The opening group 124 is arranged diagonally with respect to the opening group 123 , and the opening group 123 is also arranged diagonally with respect to the opening group 124 .

When the opening group 121 is a first opening group and the opening group 122 is a second opening group, the vapor deposition mask 100 of the present disclosure has a plurality of opening groups in which a plurality of openings are arranged along the second direction. and the second opening group is arranged diagonally opposite the first opening group along the first direction. At this time, the vapor deposition mask 100 has a region in which the opening group is not formed as an arrangement opposite to the arrangement of the opening group. For example, when the opening group 121 is the first opening group and the opening group 122 is the second opening group, the +Y direction side of the opening group 121 and the −X direction side of the opening group 122 are: There are areas where no openings or groups of openings exist. In addition, on the −Y direction side of the aperture group 122 and on the +X direction side of the aperture group 121, there are regions where no apertures or aperture groups exist. A region in which these two openings or opening groups do not exist exists as an arrangement opposite to the positional relationship of the opening group 121 and the opening group 122 . When the opening group 122 is the first opening group and the opening group 123 is the second opening group, or when the opening group 123 is the first opening group and the opening group 124 is the second opening group The same is true for

In the above, the area on the +Y direction side of the opening group 121 and the -X direction side of the opening group 122 and the area on the -Y direction side of the opening group 122 and the +X direction side of the opening group 121 are , does not necessarily have to be an area where no openings or groups of openings exist. For example, a group of openings having a smaller opening area ratio, which is the ratio of the total area of the openings to the area of the opening group, than the groups of openings 121 and 122 adjacent in the first direction and the second direction, that is, the arrangement density of the openings is sparse. A group of openings may be arranged such that This point will be described later as a modified example.

Each opening group of the vapor deposition mask 100 is arranged such that one of the openings is obliquely opposed to the other, and at the same time, a straight line passing through substantially the midpoint between the opening group 121 and the opening group 122 is parallel to the second direction. , the opening group 121 is arranged on the -Y direction side with respect to the straight line, and the opening group 122 adjacent to the opening group 121 is arranged on the +Y direction side with respect to the straight line. The opening group 123 adjacent to the opening group 122 is arranged on the -Y direction side with respect to the straight line, and the opening group 124 adjacent to the opening group 123 is arranged on the +Y direction side with respect to the straight line. . In this way, the groups of openings adjacent to each other are arranged in order along the first direction, such as the −Y direction side, the +Y direction side, the −Y direction side, and the +Y direction side with respect to a straight line parallel to the second direction. Due to the sequential relationship, the opening groups 121, 122, 123 and 124 are arranged in a zigzag along the second direction.

At this time, in the vapor deposition mask 100, a region where the opening group is not formed or a group of openings having a lower arrangement density than the group of openings arranged in a zigzag pattern forms a zigzag arrangement. It exists as a zigzag arrangement, which is the inverse arrangement of the subgroup arrangement. For example, in this embodiment, when the opening groups 121, 122, 123 and 124 are arranged in a zigzag pattern, the +Y direction side of the opening group 121, the −X direction side of the opening group 122, and the opening group 122 the -Y direction side of the opening group 121, the +X direction side of the opening group 123, the +Y direction side of the opening group 123, the -X direction side of the opening group 124, and the -Y direction side of the opening group 124, and , on the +X direction side of the aperture group 123, there is an area where no aperture or aperture group exists.

Regions where there are no openings or opening groups, or opening groups in which the arrangement density of openings is sparse are arranged in a zigzag arrangement opposite to the zigzag arrangement of the opening groups 121, 122, 123 and 124. will exist. By having such a region in which no opening group is formed, or an opening group in which the arrangement density of the openings is sparse, the rigidity of the vapor deposition mask 100 is further increased, and the vapor deposition mask 100 can be used as an object to be vapor-deposited. Even if it is arranged with a gap between it and 300, it can be made more difficult to be distorted. As a result, it is possible to manufacture a thin film on the object 300 to be vapor-deposited with higher definition.

In this embodiment, the openings are obliquely arranged, but the arrangement is not limited to this. For example, as shown in FIG. The vapor deposition mask may have only one opening group arranged in a row. Even in the case where the opening groups are arranged diagonally as in this embodiment, the number of the opening groups formed in the vapor deposition mask 100 does not need to be 4, and the opening groups are arranged diagonally. The number of opening groups may be 2 or more, and may be 4 or more. Moreover, although each opening group has eight openings, it is not limited to this, and may have two or more openings. Also, the plurality of opening groups may have different numbers of openings. In order for each aperture group to form a zigzag arrangement, the number of aperture groups should be 3 or more.

In this embodiment, the shape and size of each opening included in each opening group formed in the vapor deposition mask 100 are illustrated as being the same, but they do not necessarily have to be the same. Different shapes and sizes may be used depending on the lead time required for manufacturing. The same applies to the relationship between the shape and dimensions of the openings included in one opening group and the shape and dimensions of the openings included in the other opening group.

The vapor deposition mask 100 of the present embodiment is formed by forming necessary openings in an integrated plate member by a processing method described later. The formation method of the vapor deposition mask is not limited to this, and different formation methods including those exemplified in various modifications described later may be used.

(ii) Laminated structure part The laminated structure part of the deposition mask 100 will be described. FIG. 3 is a cross-sectional view of the deposition mask 100 of FIG. 2, taken along a plane perpendicular to the Y-axis and passing through the arrow AA, viewed from the +Y direction. FIG. 3(a) is a cross-sectional view of the vapor deposition mask 100 of this embodiment, and FIG. 3(b) is a cross-sectional view of the vapor deposition mask provided with the barrier layer 110e. As shown in FIG. 3A, the vapor deposition mask 100 has a laminated structure portion 173 in which a metal layer 172 and a resin layer 171 are laminated.

Looking at the cross section near the opening 110 of the laminated structure portion 173, in the opening 110, both the opening 110b on the metal layer 172 side and the opening 110a on the resin layer 171 side are directed in the +Z direction, that is, in the vapor deposition direction. Tapered surfaces 110d and 110c, which are end surfaces having a predetermined inclination that narrows toward the object 300, are provided. By giving a predetermined inclination to the end face of the opening, it is possible to reduce the risk of shadows occurring when a thin film is formed on the object to be vapor-deposited. The cross-sectional shape of the opening 110 need not be limited to the above.

As shown in FIG. 3B, the tapered surface 110c on the resin layer 171 side may be covered with a barrier layer 110e composed of an inorganic oxide, an inorganic nitride, a metal thin film layer, a vapor deposition layer, or the like. By providing the barrier layer 110e in this manner, generation of gas from the tapered surface 110c can be suppressed.

For the metal layer forming the layered structure of the vapor deposition mask 100, a material having relatively high rigidity, such as stainless steel, an iron-nickel alloy, an aluminum alloy, or the like, can be used. When the Invar material, which is an iron-nickel alloy, is used, deformation due to heat can be suppressed to a low level. When using pure iron, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKS steel, Cunico steel, Al-Fe alloy, etc., it is possible to fix them to the thin film manufacturing equipment by magnetic force. can. By dispersing the magnetic powder in the material, magnetism can be imparted to the vapor deposition mask 100 even when the material itself forming the vapor deposition mask 100 is not magnetic.

The resin layers forming the laminated structure of the vapor deposition mask 100 are made of materials that are relatively lightweight, such as polyimide resins, polyamide resins, polyamideimide resins, polyester resins, polyethylene resins, polyvinyl alcohol resins, polypropylene resins, and polycarbonate resins. , polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene-vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin, etc. can be used.

The metal layer 172 and the resin layer 171 forming the laminated structure portion 173 of the vapor deposition mask 100 are not limited to the materials described above, and various materials can be selected. .5 g/cm ³ or more and 7.8 g/cm ³ or less. In this case, an increase in the weight of the entire vapor deposition mask due to the metal layer occupying the laminated structure portion is suppressed, and the resin layer having a low elastic modulus is reinforced by the rigidity of the metal, so that the deflection of the vapor deposition mask as a whole is suppressed. can be done. As a result, it is possible to achieve both weight reduction and high rigidity of the vapor deposition mask, and suppress the deflection of the vapor deposition mask, thereby enabling vapor deposition of a highly precise vapor deposition object.

More preferably, the average density of the laminated structure portion 173 may be 2.1 g/cm ³ or more and 7.3 g/cm ³ or less. In this case, an increase in the weight ratio of the metal layer in the laminated structure portion can be further suppressed, and bending of the vapor deposition mask as a whole can be stably suppressed while maintaining the rigidity of the metal and the reinforcing effect of the resin layer. can. In the case where the average density of the laminated structure is around 2.1 g/cm ³ , for example, invar material, which is an alloy obtained by adding 36% nickel and a small amount of manganese, carbon, etc. to iron as a metal layer, is used as a resin. This corresponds to the case where a polyimide film is used as the layer and the thickness ratio is about 12:88. Further, the case where the average density of the laminated structure portion is around 7.3 g/cm ³ corresponds to, for example, the case where the thickness ratio of the metal layer and the resin layer is set to about 88:12.

In addition, the laminated structure portion 173 of the vapor deposition mask 100 satisfies the above-described average density condition, furthermore, the thickness of the metal layer along the Z direction is set as the first thickness, and the thickness of the resin layer along the Z direction is is the second thickness, the ratio of the second thickness to the first thickness is preferably 0.04 or more and 20.0 or less. When the ratio of the second thickness to the first thickness is within this range, the rigidity of the metal layer 172 and the resin layer 171 is balanced, and the deflection of the vapor deposition mask 100 is stabilized even after repeated use. can be suppressed. Further, when the ratio of the second thickness to the first thickness is within this range, either the metal layer or the resin layer becomes extremely thin, causing plastic deformation or fatigue fracture during repeated use. can be suppressed.

There is a certain relationship between the average density of the laminated structure and the ratio of the thicknesses of the metal layer and the resin layer. Let Pm1 be the density of the metal layer, Pp1 be the density of the resin layer, Pave1 be the average density of the laminate structure, tm1 be the thickness of the metal layer, tp1 be the thickness of the resin layer, and tt1 be the total thickness of the laminate structure. Assuming that the ratio of the thickness of the resin layer to the thickness of the metal layer is Rpm1, the sum of tm1 and tp1 is tt1, as shown in FIGS. (2) can be calculated. Therefore, Pave1 can be obtained by dividing the actual mass of the laminated structure portion 173 of the vapor deposition mask 100 by the volume. , can be calculated from these information.
Formula (1) Pave1=(Pm1×tm1+Pp1×tp1)/tt1
Formula (2) pave1=(Pm1+Pp1×Rpm1)/(1+Rpm1)

In the laminated structure portion 173 of the vapor deposition mask 100, the Young's modulus of the material forming the metal layer 172 is 80.0 Pa or more and 300.0 Pa or less, and the Young's modulus of the material forming the resin layer 171 is 2.0 Pa or more. It is preferably 0 Pa or more and 30.0 Pa or less. The deflection amount of the vapor deposition mask 100 is affected by the weight of the metal layer and the resin layer, and the Young's modulus (longitudinal elastic modulus) of each of the metal layer and the resin layer. Therefore, when the Young's modulus of the metal layer 172 and the resin layer 171 is within the above range, the amount of deflection of each of the metal layer and the resin layer does not become excessive, and the weight of the metal layer is reduced while the resin layer is effectively reduced. By reinforcing the layer, it is possible to suppress the occurrence of bending of the entire vapor deposition mask.

In this embodiment, a 36% Invar material with a thickness of 0.02 mm and a density of 8.0 g/cm ³ is used as the metal layer of the laminated structure, and a resin layer with a thickness of 0.005 mm and a density of 1.4 g is used. / cm ³ polyimide film is used. Therefore, the average density of the laminated structure portion is 6.7 g/cm ³ . The Young's modulus of the 36% Invar material used for the metal layer is about 107 GPa, and the Young's modulus of the polyimide film used for the resin layer is about 13 GPa.

In addition, the coefficient of thermal expansion of the constituent material of the resin layer is preferably 16.0 ppm/° C. or less and the moisture absorption rate is preferably 1.0% or less, and the coefficient of thermal expansion of the constituent material of the resin layer is preferably within this range. In the case of entering, the dimensional accuracy of the opening 110 can be improved, and the dimensional change rate and moisture absorption rate due to heat and aging can be reduced.

The laminated structure portion 173 of the vapor deposition mask 100 of the present embodiment is formed by forming the openings 110b in the metal material forming the metal layer 172 in advance by etching, and attaching the resin layer having no openings to the openings 110b with an adhesive. , laser irradiation is performed through the opening 110b from the side where the metal layer is present, and the opening 110a of the resin layer 171 is formed.

Various other methods can be selected as the method of forming the laminated structure portion. For example, the openings of the metal layer and the resin layer are formed in separate steps, and these are positioned and bonded together. There is a way. In addition, since it is relatively easy to form an opening in the resin layer, a method such as punching using a die is also possible without being limited to laser irradiation. Etching methods that can be applied to both the metal layer and the resin layer include, for example, a spray etching method in which an etchant is sprayed from a spray nozzle at a predetermined spray pressure, and immersion in an etching solution filled with an etchant. An immersion etching method, a wet etching method such as a spin etching method in which an etchant is dropped, or a dry etching method using gas, plasma, or the like can be used.

A method for manufacturing the vapor deposition mask 100 of this embodiment will be described. First, the metal layer 172 is formed with necessary openings by etching the metal material. First, a resist material is applied to both surfaces of a metal plate. Next, a mask having a pattern of openings formed thereon is prepared, and is superimposed on each of the front and back resist surfaces of the metal plate to mask the resist. After that, it is exposed by contact exposure and developed. Thereby, a resist pattern is formed on each of the front and back surfaces of the metal plate. Then, using this resist pattern as an anti-etching mask, etching is performed by a two-step etching method. In the two-step etching method, a resist pattern is formed on both sides of a metal plate, etching is performed from one side, and then an etching-resistant resin, a so-called backing material, is filled in the recesses that are not penetrated. After that, etching is performed from the other side to form through holes. A method of performing etching from both sides at the same time may be used instead of the two-step etching method, but from the viewpoint of processing accuracy, it is preferable to use the two-step etching method. After the etching is finished, the resist pattern is washed away. Thus, a metal layer 172 having desired openings 110b formed in the metal plate is obtained.

Next, a resin material, which is a resin layer without openings, is attached to the metal layer 172 having the openings 110b with an adhesive. Instead of using an adhesive, a self-adhesive resin material may be used. The main surface of the resin layer 171 on the side where the metal layer 172 is present is irradiated with a laser beam through the opening 110b of the metal layer 172 from the side where the metal layer 172 is arranged, thereby forming the opening 110a of the resin layer 171. do. In this way, instead of forming the openings in the resin layer in advance and then bonding the metal layer to the layer, the resin layer having no openings is bonded to the metal layer having the openings. By forming the openings in the resin layer by laser irradiation after combining, positioning accuracy is not required when bonding the resin layer to the metal layer, and the manufacturing work of the vapor deposition mask is facilitated.

In addition, although the laminated structure portion 173 of the vapor deposition mask 100 of the present embodiment is formed over the entire vapor deposition mask 100, the arrangement of the laminated structure portion 173 is not limited to this, and the vapor deposition mask 100 is partially formed. The laminated structure portion 173 may be arranged only in the region where the For example, only the region near the opening of the vapor deposition mask 100 may be the laminated structure portion, and the outer region surrounding them may be composed of only the metal layer or only the resin layer, and only the region near the opening of the vapor deposition mask 100 may be composed of only a metal layer or only a resin layer, and the outer region surrounding these may be a laminated structure portion.

For example, when only the region near the opening of the vapor deposition mask 100 is the laminated structure portion, and the outer region surrounding them is made of only the metal layer, as described above, the formation of the opening portion in the laminated structure portion. In addition, by surrounding the outer periphery of the vapor deposition mask 100 with highly rigid metal, the necessary strength and workability can be ensured while reducing the total weight of the vapor deposition mask. In addition, when only the resin layer is used only in the region near the opening of the vapor deposition mask 100, and the outer region surrounding these is used as the laminated structure portion, a significant weight reduction can be achieved while maintaining the required strength. It is possible to further suppress the occurrence of bending.

(c) Thin Film Manufacturing Method A method of manufacturing the thin film 310 on the deposition object 300 using the deposition mask 100 described above will be described. FIG. 6 is a perspective view illustrating a state in which the deposition mask 100 is attached to the thin film manufacturing apparatus 200, and FIG. 7 is a perspective view illustrating a state in which the deposition target 300 is relatively moved with respect to the deposition mask 100. .

As shown in FIG. 6, the vapor deposition material 230 is placed in the crucible 213 of the thin film manufacturing apparatus 200, and the vapor deposition mask 100 is fixed to the connecting portion 220. As shown in FIG. As a result, the main surface of the vapor deposition nozzle mounting portion 211 on the side to which the vapor deposition nozzle 212 is fixed and the main surface of the vapor deposition mask 100 on the side facing the vapor deposition nozzle 212 are arranged to face each other, and the vapor deposition nozzle 212 and the vapor deposition mask are arranged to face each other. By fixing the relative positional relationship with 100, it is possible to accurately manufacture a thin film on the object to be vapor-deposited.

The thin film manufacturing apparatus 200 to which the deposition mask 100 is fixed and the object 300 to be deposited are placed in a deposition chamber (not shown) in which a reduced pressure atmosphere is maintained. By arranging in such an environment, straightness of the vapor deposition material 230 discharged from the vapor deposition nozzle 212 can be ensured. Next, as shown in FIG. 6 , the crucible 213 is heated to a predetermined temperature by the heater 214 to vaporize the vapor deposition material 230 , and the vapor deposition material 230 is directed toward the vapor deposition mask 100 while being regulated by the vapor deposition nozzle 212 . is released. The thin film manufacturing apparatus 200 is covered with a cover (not shown) so that the vapor deposition material 230 does not leak out from places other than the openings 110 of the vapor deposition mask 100 .

Simultaneously with the above operation, as shown in FIG. 7, the main surface of the vapor deposition mask 100 on the vapor deposition target 300 side and the main surface of the vapor deposition target 300 on the vapor deposition mask 100 side are separated by a constant distance and substantially parallel to each other. While maintaining the positional relationship, the deposition target 300 is relatively moved in the +Y direction, which is the first direction, with respect to the deposition mask 100 . In this way, by moving the deposition target 300 relative to the deposition mask 100 in the first direction while the deposition material 230 is discharged, the deposition target 300 has a structure shown in FIGS. As such, the thin films 310 having a length close to the lateral width of the object 300 to be deposited in the first direction are arranged along the second direction. 5(a) and 5(b) are diagrams showing an object 300 on which a thin film 310 is formed by the thin film manufacturing apparatus 200. FIG. The thin film 310 is obtained by using the vapor deposition mask 100 to evaporate the vapor deposition material 230 by the thin film manufacturing apparatus 200 and relatively moving the vapor deposition target 300 with respect to the vapor deposition mask 100 in the first direction. FIG. 5(a) is a plan view seen from the -Z direction side, and FIG. 5(b) is a cross-sectional view taken along a plane perpendicular to the Y-axis passing through the arrow BB in FIG. 5(a). be. The thin film manufacturing apparatus 200 uses a vapor deposition mask 100 smaller than the area of the object 300 to be vapor-deposited, and a large number of thin films 310 having a length close to the lateral width of the object 300 to be vapor-deposited in the first direction are arranged along the second direction. can be manufactured as When an assembly of eight thin films 310 adjacent to each other along the second direction of the plurality of thin films 310 is defined as a thin film group, each of the thin film groups 321, 322, 323 and 324 has corresponding openings in the vapor deposition mask 100. Manufactured by groups 121, 122, 123 and 124.

The vapor deposition mask can have a certain area in which the openings are not formed, or an area of the openings in which the arrangement density of the openings is sparse, and the areas are arranged diagonally opposite each other. It exists as an arrangement opposite to the arrangement of each opening group. Therefore, the rigidity of the vapor deposition mask can be increased, the occurrence of distortion can be suppressed, and a high-definition thin film can be manufactured on the object to be vapor-deposited.

(d) Method for Manufacturing Organic Semiconductor Device The method for manufacturing an organic semiconductor according to the present disclosure is to manufacture an organic semiconductor device using the method for manufacturing a thin film described above. A detailed description of the thin film manufacturing method and the vapor deposition mask used therefor is omitted because the thin film manufacturing method and the vapor deposition mask described above can be used as they are. According to the vapor deposition mask of the present disclosure and the thin film manufacturing method using the same, by using the vapor deposition mask in which distortion is suppressed to be small, it is possible to manufacture a high-definition thin film, so that the organic layer of the organic EL element , the light-emitting layer and the cathode electrode layer can be manufactured with high precision.

2. Modifications Various modifications and changes are possible without being limited to the above-described embodiments, and they are also within the scope of the present disclosure. Some modifications are given below.

(a) Modification 1
FIG. 8 is a plan view of a vapor deposition mask 101 showing one modification of the present embodiment, viewed from the +Z direction. One of the differences from the vapor deposition mask 100 of FIG. 2 is that the vapor deposition mask 101 includes a partial mask 161 having a plurality of openings 110 and a removable partial mask 161 arranged in the peripheral region thereof. It is composed of a frame member 191 . The partial mask 161 is used when the vapor deposition mask main body is composed of a combination of a plurality of main parts, and the partial mask 161 has openings. The frame member 191 is arranged in the outer peripheral area of the partial mask, and enables attachment/detachment to/from the partial mask and attachment/detachment to/from the thin film manufacturing apparatus 200 . The sectional structure of the partial mask 161 is the same as the sectional structure of the vapor deposition mask 100 of the first embodiment, and has a laminated structure portion in which a metal layer and a resin layer are laminated. Since the frame member 191 is used to detachably fix the partial mask 161 and the thin film manufacturing apparatus 200, the frame member 191 does not have a laminated structure.

By providing the vapor deposition mask 101 with the partial mask 161 and the frame member 191, the partial mask 161 and the frame member 191 having different functions can be manufactured separately, and the processing load of the vapor deposition mask can be reduced. For example, the frame member 191 is provided with a screw structure, a magnet, a fitting structure, etc. as a mechanism for attaching to the thin film manufacturing apparatus 200, and the partial mask 161 is attached to the thin film manufacturing apparatus 200 as described above. It is possible to prepare a large number of plate materials simply provided with openings without providing a mechanism. By doing so, it is possible to reduce the burden of designing and processing for providing an attachment mechanism to the thin-film manufacturing apparatus 200 for each vapor deposition mask having openings that are arranged differently for each type.

(b) Modification 2
FIG. 9 is a plan view of a vapor deposition mask 102 showing another modified example of this embodiment as seen from the +Z direction. The vapor deposition mask 102 includes a group of openings that are obliquely arranged and arranged in a zigzag manner, and the arrangement density of the openings in the regions between the groups of adjacent openings is higher than that of the arrangement of the openings in the group of openings. is further provided with a group of openings that are sparse. Vapor deposition mask 102 comprises aperture groups 121, 122, 123 and 124 in a diagonal arrangement and also in a zigzag arrangement. In addition, the region adjacent to the +Y side of the aperture group 121, the region adjacent to the −Y side of the aperture group 122, the region adjacent to the +Y side of the aperture group 123, and the −Y side of the aperture group 124 Each of the laterally adjacent regions is provided with aperture groups 121a, 121b, 121c and 121d. The cross-sectional structure of the vapor deposition mask 102 is the same as the cross-sectional structure of the vapor deposition mask 100 of the first embodiment, and has a laminated structure portion in which a metal layer and a resin layer are laminated.

The arrangement density of the openings of the opening groups 121a, 121b, 121c and 121d is less dense than the arrangement density of the openings of the opening groups 121, 122, 123 and . For example, on the first surface of the vapor deposition mask, a rectangle with a minimum area that includes all the openings included in the opening group is assumed, the area of the rectangle is St, and the total area of the openings included in the opening group is is Ss, and the aperture area ratio Rs of the aperture group is Rs=Ss/St. The opening area ratio is the arrangement density of the openings. At this time, for example, the opening groups 121 and 122 are selected as the two opening groups arranged obliquely, and Rs of these is defined as Rs1 and Rs2. For example, the aperture group 121a is selected as the aperture group to be used, and Rs of this is assumed to be Rs3. At this time, the opening group 121a preferably satisfies the following formula (3).
Formula (3) Rs3≦(Rs1+Rs2)/4

Expression (3) is such that the opening area ratio of the opening group 121a arranged between the two opening groups 121 and 122 arranged diagonally is the opening area ratio of the opening groups 121 and 122. It shows that it is 50% or less of the average value.

In this way, when the vapor deposition mask 100 has an arrangement density of these opening groups, that is, an opening group having an opening area ratio of 50% or less, as an arrangement opposite to the obliquely facing opening group. , the deterioration of the rigidity of the vapor deposition mask 100 is suppressed, and in the small mask scanning method, even if the vapor deposition mask 100 is arranged with a gap between it and the object 300 to be vapor-deposited, distortion can be made difficult to occur. . As a result, it is possible to manufacture a thin film on the vapor-deposited object 300 with high definition. In addition, it is possible to widen the selection range of the members of the vapor deposition mask.

(c) Modification 3
A modified example in which the vapor deposition mask is composed of a plurality of partial masks and supporting members for supporting them will be described. FIG. 10 is a plan view of the vapor deposition mask 103, which has a structure in which a plurality of partial masks each including a group of openings are fixed to supporting members, viewed from the +Z direction. Vapor deposition mask 103 includes partial masks 162 , 163 , 164 and 165 , each fixed to support member 181 . Each partial mask 162 , 163 , 164 and 165 contains an aperture group 125 , 126 , 127 and 128 with a plurality of apertures 111 , respectively. A plurality of partial masks are supported and fixed at desired positions by the support member 181, and rigidity as a vapor deposition mask is imparted.

Partial mask 162 includes opening group 125 having a plurality of openings 111 . Partial mask 162 is aligned and fixed in one of mounting openings 170 provided in support member 181 . As a method of attaching the partial mask 162 to the opening 170, there is a method of fixing by fitting, a method of screwing, a method of fixing with a magnet, an adhesive, an adhesive, or the like. , any fixing method can be selected. Considering the convenience of replacement when the partial mask is damaged or deformed or when the product is changed, it is preferable that the partial mask is fixed by a method that allows repeated attachment and detachment to and from the supporting member.

Since it is necessary for the vapor deposition material 230 to pass toward the object 300 to be vapor-deposited without obstruction, the openings 111 provided in the partial mask 162 and the openings 170 in the support member 181 are aligned in the Z direction, which is the thickness direction of the vapor deposition mask 103 . They overlap when viewed from the direction. That is, the support member 181 has a structure that does not block each opening. The same applies to other partial masks 163, 164 and 165. FIG. There is no limit to the number of apertures included in each partial mask or the number of aperture groups.

For example, one partial mask may include two or more opening groups arranged diagonally, or one partial mask may include four or more opening groups arranged in a zigzag pattern. . The arrangement and shape of the openings included in each partial mask may be the same or similar arrangement and shape as in this modified example, or may be different for each partial mask. The partial masks and the support members may be made of the same metal material or resin material, or the partial masks and the support members may be made of different metal materials or different resin materials. Alternatively, one may be made of a metal material and the other may be made of a resin material.

When the partial masks 162, 163, 164, and 165 are fixed to the support member 181, the groups of openings included in the respective partial masks are arranged diagonally opposite each other. That is, when the partial mask 162 is the first partial mask and the partial mask 163 is the second partial mask, the opening groups 125 and 126 included therein are arranged obliquely opposite each other in the same manner as the vapor deposition mask 100 described above. A first opening group and a second opening group are formed. This is the same even if partial mask 162 is replaced with partial masks 163 and 164 and partial mask 163 is replaced with partial masks 164 and 165 .

Since the vapor deposition mask is composed of a partial mask containing each opening group and a supporting member for fixing the partial mask, processing of the vapor deposition mask for manufacturing a high-definition thin film is facilitated. In the case where the vapor deposition mask is composed of a partial mask containing each opening group and a supporting member for fixing this, in order to obtain the shape and positional accuracy of the openings, each containing each partial mask is required. It is only necessary to secure the accuracy of the shape and position of the opening, and it is not necessary to consider the shape and position of the opening included in other partial masks. The positional accuracy of openings between different partial masks can be guaranteed by ensuring the positioning of the partial masks and the supporting member. For example, the partial mask and the support member may have a fitting structure so that they can be positioned and fixed with a certain degree of accuracy, and either the partial mask or the support member may be added with a position adjustment function. , may be adjusted to correct the mutual positional deviation.

If the vapor deposition mask has a structure composed of a partial mask that includes each opening group and a support member that fixes it, for example, when a problem occurs in a specific opening, the opening can be covered. Only a specific partial mask needs to be replaced, and workability and maintainability can be improved. Further, when each partial mask included in the vapor deposition mask is a plurality of partial masks each having a group of openings composed of the same number of openings, each partial mask is compatible with each other and can be rearranged. Since a thin film with a similar shape can be manufactured by using the same method, the stock of partial masks as spare parts can be reduced.

When using the partial mask of this modified example, it is easy to adjust the external dimensions of the partial mask according to the required rigidity. FIG. 11 is an enlarged plan view of partial masks 162 and 163 of vapor deposition mask 103 of FIG. The lower end 151 of the partial mask 162, ie, the tip in the +X direction, can be arranged at a position lower than the upper end 152, ie, the tip in the −X direction, of the partial mask 163, ie, closer to the +X direction. This means that adjacent partial masks may overlap when viewed from the first direction.

Since the respective partial masks of this modified example can be arranged diagonally opposite each other, even if they have a positional relationship in which they overlap when viewed from the first direction, they overlap when viewed from the second direction. It can be arranged so as to have a positional relationship that does not Therefore, the space between the upper end of the partial mask and the adjacent opening or the space between the lower end of the partial mask and the adjacent opening can be sufficiently secured, so that the necessary rigidity of the partial mask can be obtained. Obtainable.

FIG. 12 is a cross-sectional view of the partial mask 162 of FIG. 11 cut along a plane perpendicular to the Y-axis passing through arrows CC and viewed from the +Y direction. FIG. 12(a) is a cross-sectional view of a vapor deposition mask 103 of this modification, and FIG. 12(b) is a cross-sectional view of a vapor deposition mask having a barrier layer 111e in a vapor deposition mask similar to this modification. . The support member 181 other than the partial mask of the vapor deposition mask 103 is made of a metal material in this modification, but various metals or resin materials can be used. On the other hand, as shown in FIG. 12A, the partial mask 162 has the same cross-sectional structure as the vapor deposition mask 100 of the first embodiment, and has a layered structure portion in which a metal layer and a resin layer are layered. Therefore, the structure of the laminated structure portion 173 is the same as that of the vapor deposition mask 100 of the first embodiment. Looking at the cross section near the opening portion 111, the opening portion 111 has an opening portion 111b on the side of the metal layer 172 and a resin layer. The opening 111a on the 171 side is also provided with tapered surfaces 111d and 111c, which are end surfaces having a predetermined inclination that narrows toward the +Z direction, that is, toward the object 300 to be vapor-deposited. The cross-sectional shape of the opening 111 may have an end surface parallel to the Z direction, which is the thickness direction of the partial mask 162 .

As shown in FIG. 12B, the tapered surface 111c on the resin layer 171 side may be covered with a barrier layer 111e composed of an inorganic oxide, inorganic nitride, metal thin film layer, vapor deposition layer, or the like. By providing the barrier layer 110e, generation of gas from the tapered surface 111c can be suppressed as in the case of FIG. 3B.

Regarding the ratio of the average density of the laminated structure portion 173 of the partial mask 162 to the thickness of the metal layer 172 and the resin layer 171 and the Young's modulus of the metal layer 172 and the resin layer 171 in this modified example, the vapor deposition mask of the first embodiment Ranges similar to the average density range, thickness ratio range, and Young's modulus range given for 100 are preferred. Further, regarding the relational expression between the average density of the laminated structure portion 173 of the partial mask 162 and the ratio of the thicknesses of the metal layer 172 and the resin layer 171 in this modified example, the expression (1) and the expression ( 2).

That is, the density of the metal layer is Pm2, the density of the resin layer is Pp2, the average density of the laminated structure portion is Pave2, and as shown in FIGS. is tp2, and the total thickness of the laminated structure portion is tt2. When the ratio of the thickness of the resin layer to the thickness of the metal layer is Rpm2, the sum of tm2 and tp2 is tt2, and Pave2 is Pave2 in the above-described equations (1) and (2), and Pm1 is Pm2. , Pp1 can be read as Pp2, tm1 as tm2, tp1 as tp2, tt1 as tt2, and Rpm1 as Rpm2. Pave2 can also be obtained by dividing the actual mass of the laminated structure portion 173 of the partial mask 162 by the volume. can be obtained by calculation from the information of

In this modified example, only the partial mask 162 has a laminated structure portion of a metal layer and a resin layer, and the support member 181 to which the partial mask 162 is attached is made of a metal material. Since the support member 181 is formed with a large number of openings for attaching a plurality of partial masks, there is little risk of bending due to its own weight even if it is made of only a metal material. In this way, by using different materials for the partial mask and the supporting member other than that, the supporting member has a simple structure and is easy to process and prepare. As with the partial mask 162, the support member 181 may have a structure having a layered structure of a metal layer and a resin layer. Alternatively, the partial mask 162 may be configured with only a metal layer or a resin layer, and the support member 181 may be configured with a layered structure of the metal layer and the resin layer. For example, if the partial mask 162 is composed only of a resin layer that is lightweight and easy to process to form an opening, and the support member 181 is a laminated structure, a significant weight reduction can be achieved while maintaining the required strength. Therefore, it is possible to further suppress the occurrence of bending.

(d) Modification 4
Next, a modification of a vapor deposition mask including a partial mask and a support member and a frame member arranged in the outer peripheral region will be described. FIG. 13 is a plan view of a vapor deposition mask 104 in which a plurality of partial masks containing opening groups are attached to a supporting member, and a frame member is fixed to the outer peripheral region of the supporting member, viewed from the +Z direction. be. Partial masks 162 , 163 , 164 and 165 respectively include opening groups 125 , 126 , 127 and 128 having a plurality of openings 111 , and each partial mask is detachably attached to support member 182 . Further, a frame member 192 is attached to the outer peripheral region of the support member 182, and the frame member 192 is detachable from the support member 182. As shown in FIG. In this modified example, as in modified example 3, only the partial mask has a laminated structure portion of a metal layer and a resin layer, and the support member 182 and the frame member 192 are made of a metal material.

The frame member is arranged in the outer peripheral region of the partial mask as in Modification 1, and is a member that can be attached to and detached from the partial mask as well as attached to and detached from the thin film manufacturing apparatus. , the member may be arranged in the peripheral region of the support member that supports and fixes the partial mask, and is detachable from the support member as well as detachable from the thin film manufacturing apparatus.

Since the vapor deposition mask 104 is provided with the frame member 192 serving as an outer frame, the partial masks 162, 163, 164 and 165 can be attached to the support member 182 in advance, and the preparation time for the vapor deposition mask can be shortened.

(e) Modification 5
Another modification of the vapor deposition mask, which includes a partial mask and a support member and further includes a frame member in the outer peripheral region, will be described. FIG. 14 shows, as in Modification 4, a group of openings having a plurality of openings, each of which is included in a corresponding partial mask, a support member for attaching each partial mask, and a frame member in the outer peripheral region thereof. It is the top view which looked at the vapor deposition mask 105 from + Z direction.

As shown in FIG. 14(a), vapor deposition mask 105 includes a plurality of opening groups 125, 126, 127 and 128 each having a plurality of openings 111, which are included in partial masks 162, 163, 164 and 165, respectively. ing. Furthermore, a frame member 193 is attached to the peripheral region of the support member 183 to which these partial masks are attached. As shown in FIG. 14(b), the support member 183 has a lattice-like frame structure extending vertically and horizontally. Partial masks 162 , 163 , 164 and 165 are detachable from support member 183 , and support member 183 is detachable from frame member 193 . In this modification, as in modification 4, only the partial mask has a laminated structure portion of a metal layer and a resin layer, and the support member 183 and the frame member 193 are made of a metal material.

By adopting such a configuration, the support member 183 can be easily manufactured by a combination of rectangular timbers and round bar members in addition to the processing method of forming an opening from a plate-like member by cutting or the like. The selection range of materials and processing methods can be expanded. In addition, the rectangular gaps arranged vertically and horizontally between the grid frame structure of the support member 183 can all have the same shape, for example, and the gaps can be filled with a standardized partial mask of a fixed size, or Either dummy member for closing the opening can be fitted and fixed. In this way, the partial masks, the dummy members, and the support members of the grid-like frame structure can be standardized regardless of the type. For example, when thin films are manufactured by changing the vapor-deposited material to a smaller size, the partial mask 165 is removed without replacing the supporting member 183 or the frame member 193 in FIG. This can be easily handled by switching such as placing 195 .

100, 101, 102, 103, 104, 105, 106 deposition mask 100a first surface 100b second surface 110, 111, 112, 113 opening 110a opening 110b of resin layer 171 opening 110c of metal layer 172 resin layer 171 Tapered surface 110d of opening 110a of metal layer 172 Tapered surface 110e of opening 110b of metal layer 172 Barrier layers 110F, 110G, 110H, 110I, 110J, 110K, 110L X-direction spacing 110M between openings 110 of opening group 121, 110N, 110O, 110P, 110Q, 110R, 110S X-direction spacing 111a between openings 110 of opening group 122 Opening 111b of resin layer 171 Opening 111c of metal layer 172 Tapered surface of opening 111a of resin layer 171 111d Tapered surface 111e of opening 111b of metal layer 172 Barrier layers 121, 121a, 121b, 121c, 121d, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137, 138, 139, 140, 141, 142, 143, 144, 145, 146, 147, 148, 149 opening group 121ave average spacing 122ave in the X direction between each opening 110 of the opening group 121 opening an average distance 150 in the X direction between each opening 110 in the group of openings 122; Lower end 152 of partial mask 162 Upper ends 161, 162, 163, 164, 165, 166 of partial mask 163 Partial mask 170 Opening 171 Resin layer 172 Metal layer 172a Surface 173 of metal layer 172 opposite to resin layer 171 Layered structure Parts 181, 182, 183, 184 Supporting members 191, 192, 193, 194 Frame member 195 Dummy member 200 Thin film manufacturing apparatus 210 Deposition source 211 Deposition nozzle mounting part 212 Deposition nozzle 213 Crucible 214 Heater 215 Release part 220 Connection part 230 Deposition Material 300 Object 310 Thin film 321 Thin film group 322 corresponding to opening group 121 Thin film group 323 corresponding to opening group 122 Thin film group 324 corresponding to opening group 123 Thin film group corresponding to opening group 124

Claims (9)

A vapor deposition mask used for vapor deposition on an object to be vapor-deposited,
the first side,
a second surface facing the first surface;
a plurality of openings penetrating between the first surface and the second surface; and an opening group having a plurality of the openings;
with
The vapor deposition mask and the object to be vapor-deposited are relatively movable along the first direction in the first plane while providing a gap between the first surface of the vapor deposition mask and the object to be vapor-deposited,
The vapor deposition mask has a laminated structure portion in which a resin layer made of an organic polymer and a metal layer made of metal are laminated,
An evaporation mask, wherein an average density that can be obtained by dividing the actual mass of the laminated structure part by volume is 1.5 g/cm ³ or more and 7.8 g/cm ³ or less. A thickness of the metal layer of the laminated structure portion along the normal direction of the first surface is defined as a first thickness,
When the thickness of the resin layer of the laminated structure portion along the normal direction of the first surface is defined as a second thickness,
2. The vapor deposition mask according to claim 1, wherein the ratio of said second thickness to said first thickness is 0.04 or more and 20.0 or less. The Young's modulus of the material constituting the metal layer of the laminated structure portion is 80.0 Pa or more and 300.0 Pa or less,
3. The vapor deposition mask according to claim 2, wherein a Young's modulus of a constituent material of said resin layer of said laminated structure portion is 2.0 Pa or more and 30.0 Pa or less. The vapor deposition mask includes a support member,
a plurality of partial masks detachably fixed to the support member,
4. The vapor deposition mask according to any one of claims 1 to 3, wherein each of said plurality of partial masks has said opening group. 5. The vapor deposition mask according to claim 4, wherein said laminated structure portion is provided on said support member. 6. The vapor deposition mask according to claim 4, wherein said laminated structure portion is provided in said partial mask. A thin film manufacturing apparatus for manufacturing a thin film by depositing a deposition material on an object to be deposited,
The deposition mask according to any one of claims 1 to 6,
an emission unit that emits the vapor deposition material toward an object to be vapor-deposited;
a connecting portion to which the vapor deposition mask is detachably fixed; and
A moving unit that relatively moves the thin film manufacturing apparatus and the object to be vapor-deposited along the first direction in the first plane while providing a gap between the first surface of the vapor deposition mask and the object to be vapor-deposited. ,
A thin film manufacturing device consisting of A method for producing a thin film,
A vapor deposition step of passing the vapor deposition material through the plurality of openings of the vapor deposition mask according to any one of claims 1 to 6 and vapor depositing it on the object to be vapor deposited,
In the vapor deposition step, the vapor deposition mask and the object to be vapor-deposited are placed relative to each other along the first direction in the first plane while providing a gap between the first surface of the vapor deposition mask and the object to be vapor-deposited. A method for manufacturing a thin film that is moved. A method for manufacturing an organic semiconductor device,
A method for producing an organic semiconductor device, using the method for producing a thin film according to claim 8 .

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