JP7119042B2 - Film forming apparatus, film forming method using the same, and electronic device manufacturing method - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method using the same, and a method of manufacturing an electronic device.

Organic EL display devices (organic EL displays) are not limited to smart phones, televisions, and displays for automobiles, and their application fields are expanding to VR HMDs (Virtual Reality Head Mount Displays) and the like. In particular, displays used for VR HMDs are required to form pixel patterns with high definition in order to reduce dizziness of users. That is, there is a demand for higher resolution.
In the manufacture of an organic EL display device, when forming an organic light emitting element (organic EL element; OLED) that constitutes the organic EL display device, the film forming material discharged from the film forming source of the film forming apparatus is used as a pixel pattern. An organic layer or a metal layer is formed by forming a film on a substrate through a mask on which is formed.

In such a film formation process, it is necessary to keep the relative positions of the substrate and the mask as constant as possible in order to improve film formation accuracy. However, in the film forming process, the temperatures of the substrate and the mask rise due to radiant heat generated when the film forming source is heated. If the substrate and the mask are made of different materials, the substrate and the mask will have different coefficients of thermal expansion, resulting in deviations in the relative positions of the substrate and the mask.

2. Description of the Related Art Conventionally, as a method for suppressing a temperature rise of a substrate and a mask in a vacuum processing apparatus, a method as disclosed in Japanese Unexamined Patent Application Publication No. 2002-300002 is known. In Patent Literature 1, a coolant is caused to flow through a cooling jacket installed in a vacuum vapor deposition apparatus, thereby radiation-cooling the substrate adsorption means fastened to the cooling jacket with a predetermined distance therebetween.

Japanese Patent Application Laid-Open No. 2004-87869

However, in a vacuum deposition apparatus, it is common to install an anti-adhesion plate that facilitates the removal of film-forming materials adhering to places other than the substrate by surrounding the substrate, mask, film-forming source, etc. in the vacuum chamber. target. Alternatively, the film formation may be controlled by providing a movable shutter between the film formation source and the mask. In such a case, the temperature of the anti-adhesion plate and shutter is increased by receiving radiant heat from the deposition source. A shift may occur in the relative position of the mask. Alternatively, radiant heat may be generated from the walls of the chamber and other components located within the chamber, heating the substrate and mask. Therefore, there is a problem that the temperature rise of the substrate and the mask cannot be sufficiently suppressed only by cooling the substrate adsorption means as described in Patent Document 1.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to more effectively suppress the temperature rise of a substrate and a mask in view of the above-described problems of the prior art.

A film deposition apparatus according to an embodiment of the present invention includes a chamber whose interior is maintained in a vacuum, and a substrate adsorption means arranged inside the chamber for adsorbing and holding a substrate. A film forming apparatus for forming a film of a film forming material discharged from an arranged film forming source on the substrate held by the substrate attracting means through a mask, the film forming apparatus being arranged inside the chamber to attract the substrate. a substrate adsorption means radiation cooling jacket for cooling the means by radiation; an anti-adhesion plate disposed between a first wall constituting the chamber and the film formation source; and the first wall and the anti-adhesion plate. An anti-adhesion plate radiation cooling jacket disposed between and radiation-cooling the anti-adhesion plate , a shutter disposed between the film formation source and the mask, and a shutter cooling jacket for radiation-cooling the shutter . It is characterized by having

According to the present invention, it is possible to exhaust and insulate thermal disturbances from the film formation source and the outside air while suppressing the temperature rise of the substrate and the mask.

FIG. 1 is a schematic cross-sectional view of a film forming apparatus according to one embodiment. FIG. 2 is a schematic cross-sectional view of an electrostatic chuck radiant cooling jacket according to one embodiment. FIG. 3 is a cross-sectional schematic diagram of a shutter cooling jacket according to one embodiment. FIG. 4 is a schematic diagram showing an electronic device.

Hereinafter, embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples represent configurations of the present invention by way of example, and the scope of the present invention is not limited to these configurations. In addition, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. in the following description are intended to limit the scope of the present invention only to these unless otherwise specified. not a thing

INDUSTRIAL APPLICABILITY The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be suitably applied to an apparatus for forming a thin film (material layer) with a desired pattern by vacuum deposition. .

As the material of the substrate, any material such as semiconductor (for example, silicon), glass, polymer material film, metal, etc. can be selected. may be a laminated substrate. In addition, any material such as an organic material and a metallic material (metal, metal oxide) can be selected as a film forming material.

It should be noted that the present invention can also be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus in addition to the vacuum vapor deposition apparatus that uses heat evaporation. Specifically, the technology of the present invention can be applied to various electronic devices such as semiconductor devices, magnetic devices, and electronic parts, and manufacturing apparatuses for optical parts and the like. Specific examples of electronic devices include light-emitting elements, photoelectric conversion elements, and touch panels. Among others, the present invention is preferably applicable to manufacturing apparatuses for organic light-emitting elements such as OLEDs and organic photoelectric conversion elements such as organic thin-film solar cells. The electronic device in the present invention includes a display device (eg, an organic EL display device) and a lighting device (eg, an organic EL lighting device) equipped with a light-emitting element, and a sensor (eg, an organic CMOS image sensor) equipped with a photoelectric conversion element. It is a thing.

<Deposition equipment>
FIG. 1 is a schematic diagram showing the configuration of a film forming apparatus 10 according to one embodiment of the present invention.

The film-forming apparatus 10 heats the film-forming material of the film-forming source to evaporate or sublime it, and forms a film on the substrate W through the mask M. FIG. The adjustment (alignment) of the relative positions of the substrate W and the mask M is performed by aligning them by driving the stage. A series of film formation processes from alignment to film formation are performed in a film formation apparatus.

The film forming apparatus 10 comprises a vacuum chamber 15 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. A fine movement stage mechanism 12 for adjusting the position of the substrate W, a substrate adsorption means 14 for adsorbing and holding the substrate W, a mask table 13 for supporting the mask M, a coarse motion stage 131 for adjusting the position of the mask M, and film formation. It includes a deposition source 11 that heats and releases material.

The film forming apparatus 10 according to one embodiment can further include magnetic force applying means 16 for bringing the metal mask M into close contact with the substrate W side by magnetic force.

The vacuum chamber 15 of the film forming apparatus 10 according to one embodiment can maintain the internal space of the entire vacuum chamber 15 in a high vacuum state by connecting a vacuum pump (not shown).

The fine movement stage mechanism 12 is a stage mechanism for adjusting the position of the substrate W or the substrate attracting means 14, and enables the relative position of the substrate W with respect to the mask M to be below a threshold value. The fine movement stage mechanism 12 includes a reference plate portion 121 (first plate portion) functioning as a support structure and a fine movement stage plate portion 122 (second plate portion) functioning as a movable table.

The fine movement stage mechanism 12 can be configured as a magnetic levitation stage mechanism driven by a magnetic levitation linear motor so that the position of the substrate W or the substrate attracting means 14 can be adjusted with high precision. That is, for example, a coil through which a current flows is installed in the reference plate portion 121 as a stator, and a permanent magnet is installed as a mover in the region of the fine movement stage plate portion 122 corresponding to this. By moving the fine movement stage plate portion 122 in a state of being magnetically levitated, the position of the substrate attracting means 14 mounted on one main surface (for example, the lower surface) of the fine movement stage plate portion 122 and the substrate W attracted thereto can be changed. It can be adjusted with high precision. The fine movement stage mechanism 12 includes position measuring means for measuring the position of the fine movement stage plate portion 122 , self-weight compensation means for compensating for the gravity acting on the fine movement stage plate portion 122 , and the origin position of the fine movement stage plate portion 122 . Origin positioning means or the like for determining may also be included.

The mask stand 13 is a support structure for setting and fixing the mask M, and is set on the coarse movement stage 131 . Thereby, the relative position of the mask M to the substrate W and the vertical spacing can be adjusted.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate W, and is supported by the mask table 13 . For example, the mask M used to manufacture an organic EL display panel for VR-HMD is a fine metal mask in which a fine opening pattern corresponding to the RGB pixel pattern of the light emitting layer of the organic EL element is formed. It includes a fine metal mask and an open mask used to form common layers (hole injection layer, hole transport layer, electron transport layer, electron injection layer, etc.) of the organic EL device. . The pattern of openings in mask M is defined by a blocking pattern that does not allow the passage of particles of deposition material. Also, the mask M may be manufactured using silicon as a material.

The substrate adsorption means 14 is a means for adsorbing and holding a substrate W as a film-forming object carried into the apparatus. The substrate adsorption means 14 is installed on the fine movement stage plate portion 122 which is the movable base of the fine movement stage mechanism 12 . The substrate chucking means 14 is, for example, an electrostatic chuck having a structure in which electric circuits such as metal electrodes are embedded in a dielectric or insulator (eg, ceramic material) matrix. The electrostatic chuck as the substrate attracting means 14 has a dielectric material with a relatively high resistance interposed between the electrode and the attracting surface, and the Coulomb force that attracts the object by the Coulomb force between the electrode and the object to be attracted. type electrostatic chuck, or a dielectric having a relatively low resistance is interposed between the electrode and the chucking surface, and the Johnson chucking occurs between the chucking surface of the dielectric and the object to be chucked. It may be a Johnson-Rahbek force type electrostatic chuck in which attraction is performed by a Rabeck force, or a gradient force type electrostatic chuck in which an object to be attracted is attracted by a non-uniform electric field. When the object to be adsorbed is a conductor or semiconductor (silicon wafer), it is preferable to use a Coulomb force type electrostatic chuck or a Johnson-Rahbek force type electrostatic chuck, and the object to be adsorbed is an insulator such as glass. , it is preferable to use a gradient force type electrostatic chuck.

The film forming source 11 includes a crucible (not shown) containing a film forming material to be formed on the substrate W, a heater (not shown) for heating the crucible, and the like. The deposition source 11 can have various configurations according to the application, such as a point deposition source or a linear deposition source. A shutter 18 is generally installed because it is necessary to prevent the deposition material from scattering on the substrate when the substrate is loaded and unloaded and during alignment.

The magnetic force application means 16 is a means for drawing the metal mask M toward the substrate W side by magnetic force during film formation, and is installed so as to be able to move up and down in the vertical direction. For example, the magnetic force applying means 16 is composed of an electromagnet or a permanent magnet. An elevating mechanism 17 (moving mechanism) for elevating the magnetic force applying means 16 is installed on the upper outer side (atmosphere side) of the vacuum chamber 15 . When the deposition position where the substrate W and the mask M are in contact is reached, the magnetic force applying means 16 is lowered to draw the mask M over the electrostatic chuck 14 and the substrate W, thereby bringing the substrate W and the mask M into close contact.

<Deposition process>
A film forming method using the film forming apparatus according to this embodiment will be described below.

The substrate W is loaded into the vacuum chamber 15 while the mask M is supported on the mask table 13 inside the vacuum chamber 15 . After the loaded substrate W is sufficiently close to or in contact with the substrate attracting means 14, a substrate attracting voltage is applied to the substrate attracting means 14 to attract the back surface of the substrate W opposite to the film forming surface. Alignment between the substrate W and the mask M is performed by driving the fine movement stage mechanism 12 and coarse movement stage 131 . When the amount of relative positional deviation between the substrate W and the mask M becomes smaller than a predetermined threshold value, the magnetic force applying means 16 is lowered, and after bringing the substrate W and the mask M into close contact, the shutter 18 is opened to form a film. A material is deposited on a substrate W; After the film is formed to a desired thickness, the magnetic force applying means 16 is lifted to separate the substrate W and the mask M, and the substrate W is unloaded.

In the above description, the film forming apparatus 10 has a so-called upward vapor deposition method (depot-up) configuration in which film formation is performed with the film forming surface of the substrate W facing downward in the vertical direction, but the present invention is not limited to this. The substrate W may be placed vertically on the side surface of the vacuum chamber 15, and the film formation may be performed with the film formation surface of the substrate W parallel to the direction of gravity.

<Electrostatic Chuck Radiation Cooling Jacket>
In FIG. 1, a film forming source 11 is provided on the bottom surface of the vacuum chamber 15 . The film-forming source 11 has an ejection hole for the film-forming material, and the substrate W and the mask M are arranged in front of the ejection hole, with the film-forming surface facing the ejection hole. The mask M is provided with patterned holes through which the film-forming material passes at desired locations, and the film-forming material discharged from the film-forming source 11 adheres to the substrate W in a desired pattern through the mask M. .

Since the film-forming source 11 heats the inside of the crucible to a high temperature of nearly 500° C. in order to release the film-forming material, the temperature of the substrate W and the mask M rises due to the radiant heat from the film-forming source 11 . Further, the electrostatic chuck, which is the substrate attracting means 14 that attracts and holds the substrate W, generates heat when energized.

In order to suppress the temperature rise of the substrate W and the mask M due to the radiant heat from the film forming source 11 or the heat generated by the electrostatic chuck as the substrate chucking means 14, the electrostatic chuck as the substrate chucking means 14 for chucking the substrate W is provided. Alternatively, it is conceivable to connect a coolant pipe for exhaust heat to the fine movement stage plate portion 122 on which the substrate adsorption means 14 is mounted. However, this method may affect the alignment accuracy of the substrate W and the mask M. FIG. In other words, the fine movement stage plate portion 122 on which the substrate attracting means 14 is mounted enables the substrate W and the mask M to be aligned with high accuracy by being finely driven while the substrate W is being attracted. Therefore, directly connecting the cooling medium piping for exhaust heat to the fine movement stage plate portion 122 involved in driving the substrate forms a path for transmission of vibration and pulsation of the cooling medium, thereby improving the alignment accuracy. undesirable above.

Therefore, in one embodiment, a radiation cooling jacket is installed in the vicinity of the electrostatic chuck, which is the substrate attracting means 14, and the electrostatic chuck 14 and the substrate W adjacent thereto are cooled by radiation cooling from the radiation cooling jacket. The mask M is cooled together. By using radiation cooling, it is possible to constantly exhaust heat without contact with the object to be cooled. It is also possible to eliminate the factor that worsens the deviation of the relative position of M.

FIG. 2 is a cross-sectional view showing an electrostatic chuck radiation cooling jacket 21 installed in proximity to the electrostatic chuck 14. As shown in FIG. The electrostatic chuck radiation cooling jacket 21 is intended to cool the electrostatic chuck 14 and the substrate W and mask M adjacent thereto in a non-contact manner by using radiation cooling. The electrostatic chuck radiation cooling jacket 21 may be installed in the magnetic force applying means 16 that attracts the mask M to the substrate W side by magnetic force during film formation, and is supported by a structure adjacent to the electrostatic chuck 14 separately. You can When the substrate W and the mask M are placed in the magnetic force applying means 16, the substrate W and the mask M receive radiation heat from the film forming source 11, and when the electrostatic chuck 14 generates heat, the substrate W and the mask M come close to the electrostatic chuck 14 during film formation. It's convenient. In addition, since the distance from the electrostatic chuck 14 can be adjusted by the elevating mechanism 17 that elevates the magnetic force applying means 16, it is effective in adjusting the amount of radiation cooling.

A coolant pipe 211 (coolant supply) is connected to the electrostatic chuck radiation cooling jacket 21 , and a coolant required for temperature control of the electrostatic chuck radiation cooling jacket 21 is supplied from outside the vacuum chamber 15 . The electrostatic chuck radiation cooling jacket 21 is made of a plate material made of metal such as brass, and is provided with a flow path through which a coolant supplied from a coolant pipe 211 circulates. Further, the outer surface 21a of the electrostatic chuck radiation cooling jacket 21, which faces the vacuum chamber wall surface at a distance, is mirror-finished to reduce the emissivity. As a result, it is possible to insulate the heat inflow of outside air through the wall surface of the vacuum chamber and to reduce the flow rate of coolant required for exhausting heat. On the other hand, the inner surface 21b of the electrostatic chuck radiation cooling jacket 21 facing the electrostatic chuck 14 with a distance therefrom is coated with a DLC (diamond-like carbon) film to improve the emissivity. there is As a method for making the emissivity of the inner surface 21b higher than that of the outer surface 21a, in addition to applying the DLC film described above, it is possible to apply a treatment to make the surface rougher than the outer surface 21a or a treatment to make it a black surface. Examples of such surface treatments include blasting, black plating, oxide film formation, and thermal spraying.

When the electrostatic chuck radiation cooling jacket 21 is installed on the magnetic force applying means 16, the lower surface of the magnetic force applying means 16 becomes the inner surface 21b. As a result, the amount of heat exchanged between the electrostatic chuck radiation cooling jacket 21 and the electrostatic chuck 14 is increased, and the temperature rise of the electrostatic chuck 14, the substrate W, and the mask M is suppressed.

A temperature sensor 193 is installed on the inner surface 21b. The temperature sensor 193 is connected to an amplifier and a computer (not shown), and measures the temperature of the inner surface 21b to calculate the radiation cooling amount for cooling the electrostatic chuck. The refrigerant temperature is controlled by giving a command to the chiller connected to the computer (not shown) so that the radiation cooling amount becomes a desired value. At this time, based on the temperature measurement result of the temperature sensor 193, the temperature of the refrigerant may be directly controlled, or the flow rate of the supplied refrigerant may be controlled. As described above, by using the temperature sensor 193, the temperature of the electrostatic chuck can be indirectly controlled, and the temperatures of the substrate W and the mask M can also be suppressed.

Aluminum may be used as the material of the electrostatic chuck radiation cooling jacket 21 if the requirements for the degree of vacuum of the vacuum deposition apparatus allow. Stainless steel may also be used if more stringent vacuum requirements need to be met. In this case, since the thermal conductivity of stainless steel is lower than that of brass or aluminum, it is necessary to construct more complicated coolant channels in order to achieve a uniform temperature.

Although this embodiment includes the magnetic force application means 16 for bringing the metal mask M into close contact with the substrate W side by magnetic force, it is not limited to these configurations. For example, if the mask M is made of silicon, the magnetic force application means 16 will not be necessary. In this case, the lower surface of the electrostatic chuck radiation cooling jacket 21 becomes the inner surface 21b in FIG. Further, the electrostatic chuck radiation cooling jacket 21 in this case may be supported by the lifting mechanism 17 used for lifting and lowering the magnetic force applying means 16 in the above embodiment, or may be positioned close to the electrostatic chuck 14 . It may be supported by a separate structure.

<Anti-adhesion plate radiation cooling jacket>
In FIG. 1, inside the vacuum chamber 15, a deposition prevention plate 191 is installed so as to surround the film formation source 11, the substrate W, and the mask M. A film-forming material that scatters in directions other than M adheres. This anti-adhesion plate 191 is made of a plate material made of metal such as stainless steel or aluminum. 15 is structured so that it can be carried outside.

As described above, the anti-adhesion plate 191 also receives radiant heat from the film forming source 11 during film formation, and its temperature rises, becoming a secondary radiant heat source that affects the substrate W and the mask M. FIG. In one embodiment, in order to cool the secondary radiant heat from the anti-adhesion plate 191, an anti-adhesion plate radiation cooling jacket 192 is installed between the vacuum chamber wall surface in the vacuum chamber 15 and the anti-adhesion plate 191. .

A refrigerant pipe (not shown) is connected to the anti-adhesion plate radiation cooling jacket 192 , and a refrigerant necessary for temperature control of the anti-adhesion plate radiation cooling jacket 192 is supplied from outside the vacuum chamber 15 . The anti-adhesion plate radiation cooling jacket 192 is made of a plate material made of metal such as brass, and is provided therein with a flow path through which a coolant supplied from a coolant pipe circulates. Further, the outer surface 192a of the anti-adhesion plate radiation cooling jacket 192 facing the vacuum chamber wall surface is mirror-finished to reduce the emissivity. As a result, it is possible to insulate the heat inflow of outside air through the wall surface of the vacuum chamber and to reduce the flow rate of coolant required for exhausting heat. On the other hand, the inner surface 192b of the anti-adhesion plate radiation cooling jacket 192 facing the anti-adhesion plate 191 is coated with a DLC film to improve the emissivity. As a method for making the emissivity of the inner surface 192b higher than that of the outer surface 192a, in addition to the application of the DLC film described above, a process of roughening the outer surface 192a or a black surface process can be applied. Examples of such surface treatments include blasting, black plating, oxide film forming, and thermal spraying. As a result, the amount of heat exchanged between the anti-adhesion plate radiation cooling jacket 192 and the anti-adhesion plate 191 is increased, and the temperature rise of the anti-adhesion plate 191 is suppressed.

Thus, by installing the anti-adhesion plate radiation cooling jacket 192 between the anti-adhesion plate 191 and the wall surface of the vacuum chamber, the influence of the secondary radiation heat from the anti-adhesion plate to the substrate and the mask is suppressed, and the wall surface of the vacuum chamber is reduced. It is possible to suppress the influence of radiant heat due to changes in the outside air temperature. In addition, since the heat input from the outside air is insulated by adjusting the emissivity of the surface of the radiation cooling jacket 192 installed separately, compared to the configuration in which the heat exhausting means is provided directly on the wall surface of the vacuum chamber, The flow rate of the coolant flowing through the cooling jacket 192 can be reduced, which is advantageous in increasing the temperature responsiveness of the adhesion-preventing plate. In addition, the anti-adhesion plate 191 is frequently attached and detached in order to remove and clean the adhered film material. Therefore, the maintainability of the apparatus can be greatly improved. In addition, it is possible to prevent a change in emissivity caused by adhesion of the film forming material to the anti-adhesion plate radiation cooling jacket 192 and removal of the adhering film forming material.

A temperature sensor 193 is installed on the inner surface 192 b of the anti-adhesion plate radiation cooling jacket 192 . The temperature sensor 193 is connected to an amplifier and a computer (controller) (not shown), and measures the temperature of the inner surface 192b to calculate the amount of radiation cooling for cooling the attachment-preventing plate 191. FIG. The refrigerant temperature is controlled by giving a command to a chiller (not shown) connected to a computer so that the radiation cooling amount becomes a desired value. At this time, the temperature of the coolant may be directly controlled, or the flow rate of the supplied coolant may be controlled. As described above, the temperature sensor 193 is used to control the temperature of the anti-adhesion plate 191, thereby making it possible to suppress the secondary radiant heat directed from the anti-adhesion plate 191 to the substrate W and the mask M. FIG.

Aluminum may be used as the material of the anti-adhesion plate radiation cooling jacket 192 if the requirements for the degree of vacuum of the vacuum deposition apparatus allow. Stainless steel may also be used if more stringent vacuum requirements need to be met. In this case, since the thermal conductivity of stainless steel is lower than that of brass or aluminum, it is necessary to construct more complicated coolant channels in order to achieve a uniform temperature.

<Shutter cooling jacket>
FIG. 3 is a cross-sectional view of shutter 18 having shutter cooling jacket 183 . Generally, the film forming source 11 is provided with a shutter 18 that prevents the film forming material from scattering on the substrate when the substrate is loaded and unloaded and during alignment. However, although the shutter deposition prevention plate 181 to which the deposition material adheres within the shutter 18 can prevent the deposition material from scattering, the temperature rises due to the radiant heat from the deposition source 11, and as a result, the substrate W and the temperature of the mask M may increase.

Therefore, by providing the shutter cooling jacket 183, the temperature rise of the shutter anti-adhesion plate 181 is suppressed. If the shutter cooling jacket 183 has an integral structure with the shutter anti-adhesion plate 181, the radiant heat received from the film forming source 11 needs to be directly discharged, so the flow rate of the coolant flowing through the shutter cooling jacket 183 increases. Therefore, as shown in FIG. 3, by configuring the shutter cooling jacket 183 separately from the shutter anti-adhesion plate 181, the amount of heat input from the shutter anti-adhesion plate 181 to the shutter cooling jacket 183 can be reduced. can be reduced. By using a heat-insulating material with high heat transfer resistance for the supporting member 182 of the shutter attachment-preventing plate 181, heat transfer from the shutter attachment-preventing plate 181 to the structure is suppressed. The shutter 18 in FIG. 3 is a mechanism assuming a gate valve, and is opened and closed by moving the support arm 184 in the horizontal direction in FIG. It is not intended to be

A refrigerant pipe 185 is connected to the shutter cooling jacket 183 to supply a refrigerant necessary for temperature control of the shutter cooling jacket 183 from outside the vacuum chamber 15 . The shutter cooling jacket 183 is made of a plate material made of metal such as brass, and is provided with a flow path through which the coolant supplied from the coolant pipe 185 circulates. The outer surface 183a of the shutter cooling jacket 183 facing the substrate W and the mask M is coated with a DLC film to improve the emissivity. As a result, the amount of heat exchanged between the shutter cooling jacket 183 and the substrate W and mask M is increased, and the substrate W and mask M can be cooled while the shutter is closed. As a method for making the outer surface 183a have a higher emissivity than the inner surface 183b, in addition to applying the DLC film described above, it is possible to apply a treatment to make the surface rougher than the inner surface 183b or a treatment to make it a black surface. Examples of such surface treatments include blasting, black plating, oxide film forming, and thermal spraying. Further, the inner surface 183b of the shutter cooling jacket 183 facing the shutter anti-adhesion plate 181 is mirror-finished to reduce the emissivity. As a result, the amount of heat exchanged between the shutter cooling jacket 183 and the shutter anti-adhesion plate 181 is reduced, and the flow rate of coolant flowing through the shutter cooling jacket 183 is reduced.

In this way, the shutter cooling jacket 183 not only insulates the radiant heat from the film forming source 11 but also cools the substrate W and the mask M when closed by adjusting (increasing or decreasing) the emissivity of the surface of the jacket 183. Effects can also be expected.

A temperature sensor 193 is installed on the outer surface 183 a of the shutter cooling jacket 183 . The temperature sensor 193 is connected to an amplifier and a computer (not shown), and measures the temperature of the outer surface 183a to calculate the radiation cooling amount for cooling the substrate W and the mask M when the shutter is closed. The refrigerant temperature is controlled by giving a command to a chiller (not shown) connected to a computer so that the radiation cooling amount becomes a desired value. At this time, the temperature of the coolant may be directly controlled, or the flow rate of the supplied coolant may be controlled. As described above, by using the temperature sensor 193, the shutter can be prevented from becoming a radiant heat source, and the temperature of the substrate W and the mask M can be suppressed.

Aluminum may be used as the material for the shutter cooling jacket 183 if the requirements for the degree of vacuum of the vacuum deposition apparatus permit. Stainless steel may also be used if more stringent vacuum requirements need to be met. In this case, since the thermal conductivity of stainless steel is lower than that of brass or aluminum, it is necessary to construct more complicated coolant channels in order to achieve a uniform temperature.

<Structure Cooling Jacket>
In order to support the substrate W and the mask M, which are objects to be cooled, a cooling jacket may be installed on the structure in contact with the outside air.

The reference plate portion 121 of the fine movement stage plate portion 122 is in contact with the outside air through the device structure. Therefore, it is affected by the outside temperature. Since the temperature change of the reference plate portion 121 affects the fine movement stage plate portion 122 as radiant heat and heat transfer, the influence of outside air is insulated by cooling the reference plate portion 121 . This structure cooling jacket may be provided separately so as to be in contact with the reference plate portion 121 , or the reference plate portion 121 may be provided with a coolant channel.

The mask stand 13 on which the mask M is placed and fixed also has a portion in contact with the outside air, and is therefore affected by the outside air temperature. A change in the temperature of the mask stand 13 affects the mask M in the form of radiant heat and heat transfer. This structure cooling jacket may be provided separately so as to be in contact with the mask pedestal 13, or the mask pedestal 13 may be provided with a coolant channel.

<Method for manufacturing electronic device>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. The configuration and manufacturing method of an organic EL display device will be exemplified below as an example of an electronic device.

First, the organic EL display device to be manufactured will be described. 4a is an overall view of the organic EL display device 60, and FIG. 4b shows a cross-sectional structure of one pixel.

As shown in FIG. 4A, in a display area 61 of an organic EL display device 60, a plurality of pixels 62 each having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The term "pixel" as used herein refers to a minimum unit capable of displaying a desired color in the display area 61. FIG. In the case of the organic EL display device according to this embodiment, the pixel 62 is configured by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element. It is not limited.

FIG. 4b is a schematic partial cross-sectional view taken along line AB in FIG. 4a. The pixel 62 has an organic EL element provided on a substrate 63 with an anode 64, a hole transport layer 65, one of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68. there is Among these layers, the hole transport layer 65, the light emitting layers 66R, 66G and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue, respectively. Also, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anodes 64 to prevent the anodes 64 and cathodes 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

Although the hole transport layer 65 and electron transport layer 67 are shown as one layer in FIG. good. In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided between the anode 64 and the hole transport layer 65 . can also be formed. Similarly, an electron injection layer can be formed between cathode 68 and electron transport layer 67 .

Next, an example of a method for manufacturing an organic EL display device will be specifically described.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the anode 64 is formed, thereby forming an insulating layer 69 . . This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material deposition apparatus, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display area. It forms a film as The hole transport layer 65 is deposited by vacuum deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display area 61, a high-definition mask is not required.

Next, the substrate 63 on which the holes up to the hole transport layer 65 are formed is carried into the second organic material film forming apparatus and held by an electrostatic chuck. After the substrate and the mask are aligned and the mask is attracted to the substrate by a magnet plate, a light-emitting layer 66R emitting red is formed on the portion of the substrate 63 where the elements emitting red are to be arranged.

Similarly to the deposition of the light-emitting layer 66R, the third organic material deposition apparatus is used to deposit a green-emitting light-emitting layer 66G, and the fourth organic material deposition apparatus is used to deposit a blue-emitting light-emitting layer 66B. . After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light-emitting layers 66R, 66G, and 66B.

The substrate on which the electron transport layer 67 has been formed is moved by the metallic vapor deposition material film-forming apparatus to form the cathode 68 .

After that, the substrate is moved to a plasma CVD apparatus to form a protective layer 70, and the organic EL display device 60 is completed.

If the substrate 63 on which the insulating layer 69 is patterned is carried into the film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material will be damaged. It may deteriorate due to moisture and oxygen. Therefore, in this example, substrates are carried in and out between film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

The above-described embodiment merely shows an example of the present invention, and the present invention is not limited to the configuration of the above-described embodiment, and may be appropriately modified within the scope of the technical idea thereof.

10: vacuum vapor deposition apparatus, 11: film formation source, 12: fine movement stage mechanism, 121: reference plate section, 122: fine movement stage plate section, 13: mask stand, 14: substrate adsorption means (electrostatic chuck), 15: vacuum chamber, 18: shutter, 181: shutter anti-adhesion plate, 183: shutter cooling jacket, 21: electrostatic chuck radiation cooling jacket, 191: anti-adhesion plate, 192: anti-adhesion plate radiation cooling jacket, 193: temperature sensor, 185, 211: Refrigerant piping

Claims (19)

a chamber in which a vacuum is maintained;
a substrate adsorption means arranged inside the chamber for adsorbing and holding the substrate;
A film forming apparatus for forming a film through a mask on the substrate held by the substrate adsorption means with a film forming material discharged from a film forming source arranged inside the chamber,
a substrate adsorption means radiation cooling jacket disposed inside the chamber for radiation cooling the substrate adsorption means;
an anti-adhesion plate disposed between a first wall constituting the chamber and the film formation source;
an anti-adhesion plate radiation cooling jacket disposed between the first wall and the anti-adhesion plate for radiation-cooling the anti-adhesion plate;
a shutter disposed between the film formation source and the mask;
a shutter cooling jacket that radiation-cools the shutter;
A film forming apparatus comprising : 3. The substrate chucking means radiation cooling jacket has a first surface facing the substrate chucking means with a space therebetween and a second surface facing a wall constituting the chamber with a distance therebetween. 1. The film forming apparatus according to 1. 3. The film forming apparatus according to claim 2, wherein the emissivity of the first surface is higher than the emissivity of the second surface. 4. The film forming apparatus according to claim 1, wherein said substrate adsorption means radiation cooling jacket is not in contact with said substrate adsorption means. 5. The film forming apparatus according to claim 1, wherein said substrate attracting means is an electrostatic chuck. a magnetic force applying means for attracting the mask to the substrate held by the substrate attracting means;
a moving mechanism for moving the magnetic force applying means relative to the substrate attracting means;
6. The film forming apparatus according to claim 1, wherein said substrate attracting means radiation cooling jacket is moved together with said magnetic force applying means by said moving mechanism. The substrate adsorption means radiation cooling jacket has a coolant channel through which a coolant flows,
4. The film forming apparatus according to claim 2, further comprising coolant supply means for supplying a coolant from the outside of the chamber to the coolant channel. a chamber in which a vacuum is maintained;
a substrate adsorption means arranged inside the chamber for adsorbing and holding the substrate;
A film forming apparatus for forming a film through a mask on the substrate held by the substrate adsorption means with a film forming material discharged from a film forming source arranged inside the chamber,
a substrate adsorption means radiation cooling jacket disposed inside the chamber for radiation cooling the substrate adsorption means ;
a shutter disposed between the film formation source and the mask;
a shutter cooling jacket that radiation-cools the shutter;
with
A film formation apparatus, wherein a temperature sensor is installed in the radiation cooling jacket of the substrate adsorption means. The substrate adsorption means radiation cooling jacket has a first surface opposed to and separated from the substrate adsorption means and a second surface opposed to and separated from a wall constituting the chamber,
9. The film forming apparatus according to claim 8, wherein the temperature sensor is provided on the first surface. a coolant supply means for supplying a coolant from the outside of the chamber to a coolant channel of the radiation cooling jacket of the substrate adsorption means;
a control unit that controls at least one of the temperature and flow rate of the refrigerant based on the result of temperature measurement by the temperature sensor;
The film forming apparatus according to claim 8 or 9, comprising: a chamber in which a vacuum is maintained;
a substrate adsorption means arranged inside the chamber for adsorbing and holding the substrate;
A film forming apparatus for forming a film through a mask on the substrate held by the substrate adsorption means with a film forming material discharged from a film forming source arranged inside the chamber,
an anti-adhesion plate disposed between a first wall constituting the chamber and the film formation source;
an anti-adhesion plate radiation cooling jacket disposed between the first wall and the anti-adhesion plate for radiation-cooling the anti-adhesion plate;
with
The anti-adhesion plate radiation cooling jacket has a third surface facing the anti-adhesion plate with a distance therebetween, and a fourth surface facing the first wall with a distance therebetween,
The emissivity of the third surface is greater than the emissivity of the fourth surface
A film forming apparatus characterized by: a chamber in which a vacuum is maintained;
a substrate adsorption means arranged inside the chamber for adsorbing and holding the substrate;
A film forming apparatus for forming a film through a mask on the substrate held by the substrate adsorption means with a film forming material discharged from a film forming source arranged inside the chamber,
a substrate adsorption means radiation cooling jacket disposed inside the chamber for radiation cooling the substrate adsorption means;
a shutter disposed between the film formation source and the mask;
a shutter cooling jacket that radiation-cools the shutter;
A film forming apparatus comprising: a chamber in which a vacuum is maintained;
a substrate adsorption means arranged inside the chamber for adsorbing and holding the substrate;
A film forming apparatus for forming a film through a mask on the substrate held by the substrate adsorption means with a film forming material discharged from a film forming source arranged inside the chamber,
a substrate adsorption means radiation cooling jacket disposed inside the chamber for radiation cooling the substrate adsorption means;
an anti-adhesion plate disposed between a first wall constituting the chamber and the film formation source;
an anti-adhesion plate radiation cooling jacket disposed between the first wall and the anti-adhesion plate for radiation-cooling the anti-adhesion plate;
a shutter disposed between the film formation source and the mask;
a shutter cooling jacket that radiation-cools the shutter;
A film forming apparatus comprising: a chamber in which a vacuum is maintained;
a substrate adsorption means arranged inside the chamber for adsorbing and holding the substrate;
A film forming apparatus for forming a film through a mask on the substrate held by the substrate adsorption means with a film forming material discharged from a film forming source arranged inside the chamber,
an anti-adhesion plate disposed between a first wall constituting the chamber and the film formation source;
an anti-adhesion plate radiation cooling jacket disposed between the first wall and the anti-adhesion plate for radiation-cooling the anti-adhesion plate;
a shutter disposed between the film formation source and the mask;
a shutter cooling jacket that radiation-cools the shutter;
A film forming apparatus comprising: 15. The film forming apparatus according to claim 12 , wherein said shutter cooling jacket has a fifth surface facing said mask and a sixth surface facing said shutter. 16. The film forming apparatus according to claim 15, wherein the emissivity of the fifth surface is higher than the emissivity of the sixth surface. a chamber in which a vacuum is maintained;
a substrate adsorption means arranged inside the chamber for adsorbing and holding the substrate;
A film forming apparatus for forming a film through a mask on the substrate held by the substrate adsorption means with a film forming material discharged from a film forming source arranged inside the chamber,
a substrate adsorption means radiation cooling jacket disposed inside the chamber for radiation cooling the substrate adsorption means;
a fine movement stage plate portion movable with the substrate adsorption means mounted thereon;
a reference plate section that magnetically levitates the fine movement stage plate section;
a structure radiation cooling jacket that is installed on the reference plate portion and radiation-cools the fine movement stage plate portion;
A film forming apparatus comprising: A method for forming a film of a film forming material on a substrate through a mask inside a chamber of the film forming apparatus using the film forming apparatus according to any one of claims 1 to 10,
a step of attracting the back surface of the substrate opposite to the film formation surface by substrate attracting means arranged inside the chamber;
depositing a deposition material emitted from a deposition source on a deposition surface of the substrate through the mask;
a step of radiantly cooling the substrate chucking means by means of a radiation cooling jacket for the substrate chucking means arranged inside the chamber. 19. A method of manufacturing an electronic device, comprising manufacturing an electronic device using the film forming method according to claim 18.

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