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JP7123464B2 - Novel crystalline form of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone and method for preparing same - Google Patents
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JP7123464B2 - Novel crystalline form of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone and method for preparing same - Google Patents

Novel crystalline form of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone and method for preparing same Download PDF

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JP7123464B2
JP7123464B2 JP2022502002A JP2022502002A JP7123464B2 JP 7123464 B2 JP7123464 B2 JP 7123464B2 JP 2022502002 A JP2022502002 A JP 2022502002A JP 2022502002 A JP2022502002 A JP 2022502002A JP 7123464 B2 JP7123464 B2 JP 7123464B2
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利明 森近
亮二 大浦
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Description

本発明は、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの新規結晶形及びその製造方法に関する。 The present invention relates to a novel crystalline form of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone and a process for its preparation.

4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンは、合成樹脂の難燃剤として有用であり、オレフィン系樹脂、スチレン系樹脂を代表とする各種樹脂に使用され、これらの難燃剤を配合した樹脂は、難燃化が必要な電気・電子分野を中心に各種用途に用いられている。 4,4'-Bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone is useful as a flame retardant for synthetic resins, typified by olefin resins and styrene resins. Resins containing these flame retardants are used in various applications, mainly in the electrical and electronic fields where flame retardancy is required.

4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンには、従来、低融点の(45℃付近に融点を有する)非晶質固体と、中融点の(100℃以上130℃未満、特に110~125℃付近に融点を有する)結晶(以下、中融点の結晶を「I型結晶」と称する)が報告されている(例えば、特許文献1乃至4参照)。 4,4'-Bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone has traditionally been a low-melting (having a melting point around 45°C) amorphous solid. and a crystal with a medium melting point (having a melting point of 100° C. or higher and lower than 130° C., particularly around 110 to 125° C.) (hereinafter, the crystal with a medium melting point is referred to as “type I crystal”) has been reported (for example, patent References 1 to 4).

低融点の非晶質固体は、気温の高い夏期には融着固結しやすいため、輸送、保管、使用の際などの取り扱いが非常に煩雑となる、さらには粉砕、混合、混練の際に、溶融して目的が達成されない等、実用上問題があった。このような低融点の非晶質固体の問題点を解決するために、中融点のI型結晶の製造方法が開発、報告されたが、いずれも作業性及び経済性が悪いという問題があった。また各報告のI型結晶の融点にばらつきがあることから明らかなように、再現性に問題があり、実用上満足できるものではなかった。 Amorphous solids with low melting points tend to fuse and solidify during hot summer months, making handling during transport, storage, and use extremely complicated. , there were practical problems such as melting and not achieving the purpose. In order to solve the problems of such low-melting amorphous solids, methods for producing medium-melting type I crystals have been developed and reported, but they all have problems of poor workability and economic efficiency. . In addition, as is clear from the fact that the melting point of the type I crystals reported varies, there is a problem in reproducibility, and the results are not practically satisfactory.

特開平2-286645号公報JP-A-2-286645 特開平10-218824号公報JP-A-10-218824 特開平10-251184号公報JP-A-10-251184 特開2007-112747号公報JP 2007-112747 A

本発明は、上記の問題を解決し、合成樹脂の難燃剤として有用な高融点の4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの新規な結晶形及びその製造方法に関する。 The present invention solves the above problems and provides a high melting point 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl useful as a flame retardant for synthetic resins. A novel crystalline form of sulfone and a method for producing the same.

本発明者らは、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンについて種々検討した結果、これまで見出されていなかった、高融点の新たな結晶形(以下、「II型結晶」と称する)が存在することを見出した。この新規な結晶形は、既存の中融点のI型結晶にせん断力を加える簡便な操作によって得られる。 The present inventors have conducted various studies on 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone, and as a result, It was found that a new crystal form with a high melting point (hereinafter referred to as "type II crystal") exists. This new crystalline form is obtained by a simple procedure of applying a shearing force to the existing medium-melting type I crystals.

すなわち、本発明は以下のとおりである。
[1] Cu-Kα線による粉末X線回折パターンにおける回折角2θ=16.5°±0.3°、19.9°±0.3°、21.1°±0.3°、22.0°±0.3°、22.5°±0.3°、23.1°±0.3°、24.1°±0.3°、24.8°±0.3°、26.3°±0.3°及び29.3°±0.3°にピークを有する、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶形。
[2] 示差走査熱量分析による吸熱ピークが125~135℃である、[1]に記載の結晶形。
[3] 示差走査熱量分析による吸熱ピークが130~135℃である、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶形。
[4] 示差走査熱量分析による吸熱ピークが100℃以上130℃未満であり、Cu-Kα線による粉末X線回折パターンにおける回折角2θ=17.5°±0.3°、27.6°±0.3°、30.5°±0.3°、31.3°±0.3°及び34.1°±0.3°にピークを有する、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶にせん断力を加えることを特徴とする、示差走査熱量分析による吸熱ピークが125~135℃であり、Cu-Kα線による粉末X線回折パターンにおける回折角2θ=16.5°±0.3°、19.9°±0.3°、24.1°±0.3°、26.3°±0.3°及び29.3°±0.3°にピークを有する、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶形の製造方法。
[5] [1]~[3]に記載の4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶形を含む、難燃剤。
That is, the present invention is as follows.
[1] Diffraction angle 2θ in powder X-ray diffraction pattern by Cu-Kα rays = 16.5°±0.3°, 19.9°±0.3°, 21.1°±0.3°, 22. 0°±0.3°, 22.5°±0.3°, 23.1°±0.3°, 24.1°±0.3°, 24.8°±0.3°, 26. 4,4′-bis(2,3-dibromopropoxy)-3,3′,5,5′-tetrabromodiphenyl with peaks at 3°±0.3° and 29.3°±0.3° A crystalline form of sulfone.
[2] The crystalline form according to [1], which has an endothermic peak at 125 to 135°C by differential scanning calorimetry.
[3] A crystal form of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone having an endothermic peak at 130 to 135°C by differential scanning calorimetry .
[4] An endothermic peak measured by differential scanning calorimetry at 100° C. or more and less than 130° C., and a diffraction angle 2θ=17.5°±0.3°, 27.6°± in a powder X-ray diffraction pattern using Cu—Kα rays. 4,4′-bis(2,3- Dibromopropoxy)-3,3′,5,5′-tetrabromodiphenylsulfone crystals are subjected to shearing force, and have an endothermic peak at 125 to 135° C. and a Cu—Kα ray according to differential scanning calorimetry. Diffraction angle 2θ = 16.5° ± 0.3°, 19.9° ± 0.3°, 24.1° ± 0.3°, 26.3° ± 0.3° and a crystalline form of 4,4′-bis(2,3-dibromopropoxy)-3,3′,5,5′-tetrabromodiphenyl sulfone having a peak at 29.3°±0.3° .
[5] A flame retardant comprising a crystalline form of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone according to [1] to [3] .

本発明の結晶形は、難燃剤として有用な、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの新規な結晶形である。本発明の結晶形は、既存のI型結晶にせん断力を加えるという、商業的スケールにて再現可能な簡便な操作で製造することができることから、作業性、経済性及び再現性に優れる。また新規結晶形(II型結晶)は125℃以上の高い融点を有することから熱安定性に優れ、貯蔵や輸送に有利であり、難燃剤として各種樹脂への配合も容易となる。 The crystalline form of the present invention is a novel crystalline form of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone useful as a flame retardant. The crystalline form of the present invention is excellent in workability, economic efficiency and reproducibility because it can be produced by a simple operation reproducible on a commercial scale by applying a shearing force to an existing type I crystal. In addition, the novel crystal form (type II crystal) has a high melting point of 125° C. or higher, so it has excellent thermal stability, is advantageous for storage and transportation, and can be easily blended into various resins as a flame retardant.

合成例1で得られた、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのI型結晶の示差走査熱量分析(DSC)曲線を示す図である。Differential scanning calorimetry (DSC) curve of type I crystal of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone obtained in Synthesis Example 1 It is a figure which shows. 合成例1で得られた、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのI型結晶の粉末X線結晶回折パターンを示す図である。4 shows a powder X-ray crystal diffraction pattern of type I crystals of 4,4′-bis(2,3-dibromopropoxy)-3,3′,5,5′-tetrabromodiphenylsulfone obtained in Synthesis Example 1. It is a diagram. 実施例1で得られた、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのII型結晶のDSC曲線を示す図である。1 is a diagram showing a DSC curve of type II crystals of 4,4′-bis(2,3-dibromopropoxy)-3,3′,5,5′-tetrabromodiphenylsulfone obtained in Example 1. FIG. 実施例1で得られた、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのII型結晶の粉末X線結晶回折パターンを示す図である。4 shows a powder X-ray crystal diffraction pattern of type II crystals of 4,4′-bis(2,3-dibromopropoxy)-3,3′,5,5′-tetrabromodiphenylsulfone obtained in Example 1. It is a diagram. 実施例2で得られた、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのII型結晶のDSC曲線を示す図である。1 is a diagram showing a DSC curve of type II crystals of 4,4′-bis(2,3-dibromopropoxy)-3,3′,5,5′-tetrabromodiphenylsulfone obtained in Example 2. FIG. 実施例2で得られた、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのII型結晶の粉末X線結晶回折パターンを示す図である。4 shows a powder X-ray crystal diffraction pattern of type II crystals of 4,4′-bis(2,3-dibromopropoxy)-3,3′,5,5′-tetrabromodiphenylsulfone obtained in Example 2. It is a diagram.

本発明は、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの新規結晶形に関する。結晶形を特徴づけるための方法はいくつか存在し、例えば、示差走査熱量分析(DSC)曲線、粉末X線結晶回折パターン、単結晶X線解析などによる方法が挙げられるが、本発明の結晶の結晶形は、以下の条件にて測定した。 The present invention relates to a novel crystalline form of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone. Although there are several methods for characterizing crystalline forms, such as by differential scanning calorimetry (DSC) curves, powder X-ray crystal diffraction patterns, single crystal X-ray analysis, etc., the crystals of the present invention The crystal form was measured under the following conditions.

[示差走査熱量分析(DSC)]
測定機器:DSC-60((株)島津製作所製)
加熱速度:10℃/分
[Differential scanning calorimetry (DSC)]
Measuring instrument: DSC-60 (manufactured by Shimadzu Corporation)
Heating rate: 10°C/min

[粉末X線結晶回折]
測定機器:XRD-7000((株)島津製作所製)
走査速度:5.0°/分
X線:Cu-Kα線
電圧:50kV
電流:40mA
走査範囲:5~65°
サンプリング幅:0.02°
[Powder X-ray crystal diffraction]
Measuring instrument: XRD-7000 (manufactured by Shimadzu Corporation)
Scanning speed: 5.0°/min X-ray: Cu-Kα line Voltage: 50 kV
Current: 40mA
Scanning range: 5-65°
Sampling width: 0.02°

本発明における4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの新規結晶形(II型結晶)は、図4又は図6に示される粉末X線結晶回折パターンにより特徴づけられる。II型結晶の粉末X線結晶回折パターンにおける特徴的なピークとしては、2θ値として16.5°±0.3°、19.9°±0.3°、21.1°±0.3°、22.0°±0.3°、22.5°±0.3°、23.1°±0.3°、24.1°±0.3°、24.8°±0.3°、26.3°±0.3°及び29.3°±0.3°が挙げられる。なお、ピーク位置の許容幅(±0.3°)は、好ましくは±0.2°である。なかでもI型結晶に対して、II型結晶の粉末X線結晶回折パターンにおける特徴的なピークとしては、16.5°±0.3°、19.9°±0.3°、24.1°±0.3°、26.3°±0.3°及び29.3°±0.3°が挙げられる。 The novel crystal form (type II crystal) of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone in the present invention is shown in FIG. 4 or FIG. characterized by a powder X-ray crystal diffraction pattern. Characteristic peaks in the powder X-ray crystal diffraction pattern of the type II crystal include 2θ values of 16.5°±0.3°, 19.9°±0.3°, and 21.1°±0.3°. , 22.0°±0.3°, 22.5°±0.3°, 23.1°±0.3°, 24.1°±0.3°, 24.8°±0.3° , 26.3°±0.3° and 29.3°±0.3°. The allowable width (±0.3°) of the peak position is preferably ±0.2°. Among them, the characteristic peaks in the powder X-ray crystal diffraction pattern of the type II crystal are 16.5° ± 0.3°, 19.9° ± 0.3°, 24.1° and 24.1°. °±0.3°, 26.3°±0.3° and 29.3°±0.3°.

本発明における4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの新規結晶形(II型結晶)はまた、図3又は図5に示されるDSC曲線により特徴づけられる。したがって本発明のII型結晶は、上記の粉末X線結晶回折パターンにおける特徴的なピークを備え、かつDSCによる吸熱ピークが125~135℃、好ましくは130~135℃を示す。 The novel crystal form (type II crystal) of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone in the present invention is also shown in FIG. Characterized by the DSC curve shown. Therefore, the type II crystal of the present invention has characteristic peaks in the above powder X-ray crystal diffraction pattern and exhibits an endothermic peak of 125 to 135°C, preferably 130 to 135°C by DSC.

本発明における4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのII型結晶は、既存の中融点の結晶(I型結晶)にせん断力を加えることにより製造できる。 The type II crystal of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone in the present invention is an existing medium-melting crystal (type I crystal). It can be manufactured by applying a shear force.

本発明における4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのI型結晶は、図2に示される粉末X線結晶回折パターンにより特徴づけられる。I型結晶の粉末X線結晶回折パターンにおける特徴的なピークとしては、2θ値として17.5°±0.3°、21.4°±0.3°、22.3°±0.3°、23.0°±0.3°、24.8°±0.3°、27.6°±0.3°、28.6°±0.3°、30.5°±0.3°、31.3°±0.3°及び34.1°±0.3°が挙げられる。なお、ピーク位置の許容幅(±0.3°)は、好ましくは±0.2°である。なかでもII型結晶に対して、I型結晶の粉末X線結晶回折パターンにおける特徴的なピークとしては、17.5°±0.3°、27.6°±0.3°、30.5°±0.3°、31.3°±0.3°及び34.1°±0.3°が挙げられる。 The type I crystal of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone in the present invention was determined by the powder X-ray crystal diffraction pattern shown in FIG. Characterized. Characteristic peaks in the powder X-ray crystal diffraction pattern of the type I crystal include 2θ values of 17.5°±0.3°, 21.4°±0.3°, and 22.3°±0.3°. , 23.0°±0.3°, 24.8°±0.3°, 27.6°±0.3°, 28.6°±0.3°, 30.5°±0.3° , 31.3°±0.3° and 34.1°±0.3°. The allowable width (±0.3°) of the peak position is preferably ±0.2°. Among them, the characteristic peaks in the powder X-ray crystal diffraction pattern of the type I crystal for the type II crystal are 17.5° ± 0.3°, 27.6° ± 0.3°, 30.5° °±0.3°, 31.3°±0.3° and 34.1°±0.3°.

本発明における4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの既存の中融点の結晶(I型結晶)はまた、図1に示されるDSC曲線により特徴づけられる。したがって本発明の製造方法に供されるI型結晶は、上記の粉末X線結晶回折パターンにおける特徴的なピークを備え、かつDSCによる吸熱ピークが100℃以上130℃未満であり、好ましくは110℃~127℃である。 The existing medium melting point crystal (type I crystal) of 4,4′-bis(2,3-dibromopropoxy)-3,3′,5,5′-tetrabromodiphenyl sulfone in the present invention is also shown in FIG. Characterized by the DSC curve shown. Therefore, the type I crystal to be subjected to the production method of the present invention has a characteristic peak in the above powder X-ray crystal diffraction pattern, and an endothermic peak by DSC of 100°C or higher and lower than 130°C, preferably 110°C. ~127°C.

本発明における4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンは、特に限定されないが、例えば、以下の合成スキームに記載の製造方法により得られる。 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone in the present invention is not particularly limited, but for example, the production method described in the following synthesis scheme obtained by

Figure 0007123464000001
Figure 0007123464000001

上記製造方法では、テトラブロモビスフェノールSのアリル化及びアリル部分の臭素化の各工程をそれぞれ精製することなく行うことができる。得られた目的物を上述の先行技術文献や後述の合成例1に従い結晶化することにより、融点が100℃以上130℃未満のI型結晶が得られる。 In the above production method, each step of allylation of tetrabromobisphenol S and bromination of the allyl moiety can be performed without purification. By crystallizing the obtained target product according to the prior art document described above and Synthesis Example 1 described later, a type I crystal having a melting point of 100° C. or more and less than 130° C. can be obtained.

本発明のII型結晶の製造方法は、具体的には、I型結晶を混練機又は撹拌装置などに供給し、せん断力を加えることにより実施することができる。本発明によれば、溶媒からの析出や種結晶の添加を必要とすることなく、I型結晶にせん断力を加えて、極めて短時間で高融点のII型結晶を得ることができる。 Specifically, the method for producing type II crystals of the present invention can be carried out by supplying type I crystals to a kneader, a stirring device, or the like and applying a shearing force. According to the present invention, high-melting type II crystals can be obtained in an extremely short time by applying a shearing force to type I crystals without requiring precipitation from a solvent or addition of seed crystals.

本発明のI型結晶に加えられるせん断力は、特に限定されないが、経済性を考慮すると、I型結晶1kgに対して、1kW・s/kg以上であり、好ましくは10kW・s/kg以上であり、さらに好ましくは20kW・s/kg以上であり、最も好ましくは30kW・s/kg以上である。なおせん断力は、以下の計算式を用いて計算することができる。 The shearing force applied to the type I crystal of the present invention is not particularly limited, but in consideration of economic efficiency, it is 1 kW·s/kg or more, preferably 10 kW·s/kg or more, relative to 1 kg of the type I crystal. more preferably 20 kW·s/kg or more, most preferably 30 kW·s/kg or more. The shear force can be calculated using the following formula.

Figure 0007123464000002
Figure 0007123464000002

滞留時間は、加える剪断力の大きさや装置の種類又は容量などにより決定されるが、通常、1時間以内である。 The residence time is determined by the magnitude of the applied shearing force, the type or capacity of the device, etc., but is usually within 1 hour.

せん断力を加える装置としては、例えば、スピードマラーなどのホイール型混練機;ボールミルなどのボール型混練機;パドル型(単軸、復軸)、スクリュー型(単軸、復軸)、ローター型(単軸、復軸)、セルフクリーニング型、双腕型(開放型、加圧型)などのブレード型混練機(ねっか機、押出機);ロールミキサー、テーパーロール、バンバリ、コンティニュアスなどのロール型混練機;ヘリカルリボン翼、広幅パドル翼などの高剪断力撹拌装置;多軸撹拌装置、スタティックミキサーなどのライン撹拌装置などが挙げられる。 Devices for applying a shearing force include, for example, a wheel type kneader such as a speed muller; a ball type kneader such as a ball mill; a paddle type (single shaft, double shaft), a screw type (single shaft, double shaft), a rotor type ( Single-screw, double-screw), self-cleaning type, double-arm type (open type, pressurized type), etc. Blade type kneaders (Nekka machine, extruder); Roll mixers, taper rolls, Banbury, continuous rolls, etc. type kneaders; high shearing force stirring devices such as helical ribbon blades and wide paddle blades; line stirring devices such as multi-shaft stirring devices and static mixers.

操作方法は、回分式、半回分式、連続式などである。操作温度は、40~100℃の間、好ましくは60~100℃の間である。操作温度は一定に保持する必要はなく、40~100℃の間であれば変動させてもよい。得られたII型結晶を粉砕することによって、任意の粒径・形状の粉末もしくは粉粒体のII型結晶が得られる。 The operating method is a batch system, a semi-batch system, a continuous system, or the like. The operating temperature is between 40 and 100°C, preferably between 60 and 100°C. The operating temperature need not be held constant and may vary between 40 and 100°C. By pulverizing the obtained type II crystals, type II crystals of a powder or granules having an arbitrary particle size and shape can be obtained.

4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのII型結晶は、125℃以上の高い融点を有することから熱安定性に優れ、難燃剤として有用である。なお本発明において「難燃剤」とは、プラスチック、ゴム、繊維、木材等の可燃性素材に難燃性や不燃性といった特性を付与する目的で使用されるものを指す。したがって本発明は、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのII型結晶を含む、難燃剤にも関する。ここで、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンのII型結晶は、II型結晶を含むものであればよく、具体的には、II型結晶の割合が、難燃剤に含まれる全ての4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶に対して、好ましくは30質量%以上であり、より好ましくは50質量%以上であり、さらに好ましくは80質量%以上であり、特に好ましくは90質量%以上である。本発明の難燃剤は各種樹脂、例えば、熱可塑性樹脂、熱硬化性樹脂、熱可塑性エラストマーなどへ容易に配合できる。なかでも、ポリエチレン、ポリプロピレンなどのポリオレフィン;酢酸ビニル樹脂、塩化ビニル樹脂などのビニル樹脂;ポリスチレン、ハイインパクトポリスチレン、ABS(アクリロニトリル-ブタジエン-スチレン共重合体)などのスチレン系樹脂などに有効である。 Type II crystals of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone have a high melting point of 125°C or higher, and thus have excellent thermal stability. , is useful as a flame retardant. In the present invention, the term "flame retardant" refers to those used for the purpose of imparting properties such as flame retardancy and non-flammability to combustible materials such as plastics, rubbers, fibers, and wood. The present invention therefore also relates to flame retardants comprising type II crystals of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone. Here, the type II crystals of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone may include type II crystals. Specifically, the ratio of type II crystals to all 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone crystals contained in the flame retardant On the other hand, it is preferably 30% by mass or more, more preferably 50% by mass or more, still more preferably 80% by mass or more, and particularly preferably 90% by mass or more. The flame retardant of the present invention can be easily blended into various resins such as thermoplastic resins, thermosetting resins and thermoplastic elastomers. Among them, polyolefins such as polyethylene and polypropylene; vinyl resins such as vinyl acetate resin and vinyl chloride resin; and styrene resins such as polystyrene, high impact polystyrene and ABS (acrylonitrile-butadiene-styrene copolymer) are effective.

以下に実施例を挙げて本発明を更に詳細に説明するが、本発明はこれらの実施例によって限定されるものではない。 EXAMPLES The present invention will be described in more detail with reference to Examples below, but the present invention is not limited to these Examples.

実施例において、各結晶は以下の条件にて分析した。
[示差走査熱量分析(DSC)]
測定機器:DSC-60((株)島津製作所製)
加熱速度:10℃/分
In the examples, each crystal was analyzed under the following conditions.
[Differential scanning calorimetry (DSC)]
Measuring instrument: DSC-60 (manufactured by Shimadzu Corporation)
Heating rate: 10°C/min

[粉末X線結晶回折]
測定機器:XRD-7000((株)島津製作所製)
走査速度:5.0°/分
X線:Cu-Kα線
電圧:50kV
電流:40mA
走査範囲:5~65°
サンプリング幅:0.02°
[Powder X-ray crystal diffraction]
Measuring instrument: XRD-7000 (manufactured by Shimadzu Corporation)
Scanning speed: 5.0°/min X-ray: Cu-Kα line Voltage: 50 kV
Current: 40mA
Scanning range: 5-65°
Sampling width: 0.02°

合成例1
融点(示差走査熱量分析による吸熱ピーク)が46℃の4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンにアセトンを加えて加熱溶解後、冷却して結晶を得た(I型結晶、HPLC純度:99%)。得られた結晶の示差走査熱量分析の結果を図1に示す。その融点(示差走査熱量分析による吸熱ピーク)は127℃であった。また得られた結晶の粉末X線結晶回折パターンを図2及び表1に示す。
Synthesis example 1
Acetone is added to 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone with a melting point (endothermic peak by differential scanning calorimetry) of 46°C and dissolved by heating. After that, it was cooled to obtain crystals (type I crystal, HPLC purity: 99%). The results of differential scanning calorimetry of the obtained crystals are shown in FIG. Its melting point (endothermic peak by differential scanning calorimetry) was 127°C. 2 and Table 1 show the powder X-ray crystal diffraction pattern of the obtained crystals.

Figure 0007123464000003
Figure 0007123464000003

実施例1
120ccの小型二軸連続式混錬機((株)栗本鐵工所製、S1KRCニーダ)に合成例1で得られた4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンを、6.7kg/hrの速度で連続供給しながら混錬機排出口より内容物を連続排出し、冷却、粉砕を行い結晶を得た(II型結晶)。運転中の操作温度は100℃、回転数は300rpm、滞留時間は40秒であり、与えたせん断力は40kW・s/kgであった。得られた結晶の示差走査熱量分析の結果を図3に示す。その融点(示差走査熱量分析による吸熱ピーク)は133℃であった。また得られた結晶の粉末X線結晶回折パターンを図4及び表2に示す。
Example 1
4,4′-bis(2,3-dibromopropoxy)-3,3′ obtained in Synthesis Example 1 was placed in a 120 cc small twin-screw continuous kneader (S1KRC kneader manufactured by Kurimoto, Ltd.). ,5,5′-Tetrabromodiphenylsulfone was continuously supplied at a rate of 6.7 kg/hr, and the content was continuously discharged from the kneader outlet, cooled and pulverized to obtain crystals (type II crystals ). During operation, the operating temperature was 100° C., the rotation speed was 300 rpm, the residence time was 40 seconds, and the applied shear force was 40 kW·s/kg. FIG. 3 shows the results of differential scanning calorimetry of the obtained crystals. Its melting point (endothermic peak by differential scanning calorimetry) was 133°C. FIG. 4 and Table 2 show the powder X-ray crystal diffraction pattern of the obtained crystals.

Figure 0007123464000004
Figure 0007123464000004

実施例2
120ccの小型二軸連続式混錬機((株)栗本鐵工所製、S1KRCニーダ)にBAE-400S(マナック(株)製、融点(示差走査熱量分析による吸熱ピーク)113℃)を、6.7kg/hrの速度で連続供給しながら混錬機排出口より内容物を連続排出し、冷却、粉砕を行い結晶を得た(II型結晶)。運転中の操作温度は100℃、回転数は300rpm、滞留時間は40秒であり、与えたせん断力は25kW・s/kgであった。得られた結晶の示差走査熱量分析の結果を図5に示す。その融点(示差走査熱量分析による吸熱ピーク)は125℃であった。また、得られた結晶の粉末X線結晶回折パターンを図6及び表3に示す。
Example 2
BAE-400S (Manac Co., Ltd., melting point (endothermic peak by differential scanning calorimetry) 113 ° C.) was added to a 120 cc small twin-screw continuous kneader (Kurimoto, Ltd., S1KRC kneader). While continuously supplying at a rate of .7 kg/hr, the content was continuously discharged from the kneader outlet, cooled and pulverized to obtain crystals (II type crystals). The operating temperature during operation was 100° C., the rotation speed was 300 rpm, the residence time was 40 seconds, and the applied shear force was 25 kW·s/kg. FIG. 5 shows the results of differential scanning calorimetry of the obtained crystals. Its melting point (endothermic peak by differential scanning calorimetry) was 125°C. 6 and Table 3 show the powder X-ray crystal diffraction pattern of the obtained crystals.

Figure 0007123464000005
Figure 0007123464000005

本発明の4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの新規結晶形(II型結晶)は、既存の中融点の結晶(I型結晶)にせん断力を加えることにより製造できる。本発明の製造方法に拠れば、125℃以上の高い融点を有する新規結晶形(II型結晶)を再現性よくかつ効率的に製造できる。また新規結晶形(II型結晶)は熱安定性に優れ、貯蔵や輸送に有利であり、操作性にも優れる。したがって、難燃剤として各種樹脂への配合も容易となる。 The novel crystal form (type II crystal) of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone of the present invention is an existing crystal with a medium melting point ( It can be produced by applying a shearing force to the type I crystal). According to the production method of the present invention, a novel crystal form (type II crystal) having a high melting point of 125° C. or higher can be produced with good reproducibility and efficiency. In addition, the new crystal form (type II crystal) has excellent thermal stability, is advantageous for storage and transportation, and is also excellent in operability. Therefore, it becomes easy to mix with various resins as a flame retardant.

Claims (5)

Cu-Kα線による粉末X線回折パターンにおける回折角2θが、16.5°±0.3°、19.9°±0.3°、21.1°±0.3°、22.0°±0.3°、22.5°±0.3°、23.1°±0.3°、24.1°±0.3°、24.8°±0.3°、26.3°±0.3°及び29.3°±0.3°にピークを有する、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶。 The diffraction angle 2θ in the powder X-ray diffraction pattern by Cu-Kα rays is 16.5° ± 0.3°, 19.9° ± 0.3°, 21.1° ± 0.3°, 22.0° ±0.3°, 22.5°±0.3°, 23.1°±0.3°, 24.1°±0.3°, 24.8°±0.3°, 26.3° 4,4'-Bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenyl sulfone with peaks at ±0.3° and 29.3° ±0.3° crystal. 示差走査熱量分析による吸熱ピークが125~135℃である、請求項1に記載の結晶。 The crystal according to claim 1, which has an endothermic peak at 125 to 135°C by differential scanning calorimetry. 示差走査熱量分析による吸熱ピークが130~135℃である、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶。 A crystal of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone having an endothermic peak at 130-135°C by differential scanning calorimetry. 示差走査熱量分析による吸熱ピークが100℃以上130℃未満であり、Cu-Kα線による粉末X線回折パターンにおける回折角2θが、17.5°±0.3°、27.6°±0.3°、30.5°±0.3°、31.3°±0.3°及び34.1°±0.3°にピークを有する、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶にせん断力を加えることを特徴とする、示差走査熱量分析による吸熱ピークが125~135℃であり、Cu-Kα線による粉末X線回折パターンにおける回折角2θが、16.5°±0.3°、19.9°±0.3°、24.1°±0.3°、26.3°±0.3°及び29.3°±0.3°にピークを有する、4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶の製造方法。 It has an endothermic peak at 100° C. or more and less than 130° C. by differential scanning calorimetry, and diffraction angles 2θ in a powder X-ray diffraction pattern by Cu—Kα rays are 17.5°±0.3° and 27.6°±0. 4,4′-bis(2,3-dibromopropoxy )-3,3′,5,5′-Tetrabromodiphenylsulfone crystals are subjected to a shearing force, which has an endothermic peak at 125 to 135° C. by differential scanning calorimetry and a powder by Cu—Kα radiation. The diffraction angle 2θ in the X-ray diffraction pattern is 16.5° ± 0.3°, 19.9° ± 0.3°, 24.1° ± 0.3°, 26.3° ± 0.3° and A method for producing crystals of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone having a peak at 29.3°±0.3°. 請求項1~3のいずれかに記載の4,4′-ビス(2,3-ジブロモプロポキシ)-3,3′,5,5′-テトラブロモジフェニルスルホンの結晶を含む、難燃剤。 A flame retardant comprising the crystals of 4,4'-bis(2,3-dibromopropoxy)-3,3',5,5'-tetrabromodiphenylsulfone according to any one of claims 1 to 3.
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