JP7139167B2 - Deposition rate prediction device, deposition rate prediction method, and deposition rate prediction program - Google Patents

Description

The present invention relates to a film formation rate prediction device, a film formation rate prediction method, and a film formation rate prediction program.

Conventionally, in magnetron sputtering, by predicting the film thickness of a target material deposited on a substrate, it is required to suppress trial and error in substrate fabrication and to suppress wasteful prototyping.

Therefore, Patent Literature 1 discloses a method of predicting the film thickness using the sputtered particle generation frequency coefficient obtained from the erosion distribution and the arrival rate of the sputtered particles.

JP-A-2000-1777

However, in the film thickness prediction method described in Patent Document 1, there is room for improvement in the accuracy of the film thickness prediction value.

Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to provide a film formation rate prediction apparatus capable of improving the accuracy of a film thickness prediction value as compared with the conventional one.

In order to solve the above-described problems, a film formation rate prediction apparatus according to an aspect of the present invention includes a plate-shaped target that is a material for forming a film on a substrate, and the substrate arranged to face the target. , a magnet unit arranged on the back surface of the target, in which a plurality of magnetic bodies having positive electrodes facing the target and magnetic bodies having negative electrodes facing the target are arranged; A device for predicting the film formation rate of the target in a magnetron sputtering apparatus that applies a voltage to form a film of the component of the target on the substrate, the calculation for calculating the film formation rate based on the following formula (1) has a department.
R=α×∫T×S×[cos θ]dt×P/At (1)
R: deposition rate (nm/min), α: correction coefficient, t: target area (mm ² ), T: target sputtering amount (−), S: target sputtering rate (atoms/ions or molecules/ions ), [cos]: cosine law, P: intensity of electric power applied between the target and substrate (W), At: diameter of target atoms (mm)

Further, the calculation unit may use the sputtering amount T of the target obtained from the magnetron sputtering device when calculating the film formation rate based on the formula (1).

In order to solve the above problems, a method for predicting a film formation rate according to an aspect of the present invention comprises: a plate-like target that is a material for film formation on a substrate; , a magnet unit arranged on the back surface of the target, in which a plurality of magnetic bodies having positive electrodes facing the target and magnetic bodies having negative electrodes facing the target are arranged; A method for predicting a film formation rate of a target in a magnetron sputtering apparatus that applies a voltage to form a film of a component of the target on the substrate, wherein the film formation rate is calculated based on the following formula (1).
R=α×∫T×S×[cos θ]dt×P/At (1)
R: deposition rate (nm/min), α: correction coefficient, t: target area (mm ² ), T: target sputtering amount (−), S: target sputtering rate (atoms/ions or molecules/ions ), [cos]: cosine law, P: intensity of electric power applied between the target and substrate (W), At: diameter of target atoms (mm)

In order to solve the above problems, a film formation rate prediction program according to an aspect of the present invention includes a plate-shaped target that is a material for forming a film on a substrate, and the substrate that is arranged to face the target. , a magnet unit arranged on the back surface of the target, in which a plurality of magnetic bodies having positive electrodes facing the target and magnetic bodies having negative electrodes facing the target are arranged; A program for predicting the film formation rate of the target in a magnetron sputtering apparatus that applies a voltage to form a film of the component of the target on the substrate, comprising: Realize a calculation function that calculates
R=α×∫T×S×[cos θ]dt×P/At (1)
R: deposition rate (nm/min), α: correction coefficient, t: target area (mm ² ), T: target sputtering amount (−), S: target sputtering rate (atoms/ions or molecules/ions ), [cos]: cosine law, P: intensity of electric power applied between the target and substrate (W), At: diameter of target atoms (mm)

In the film formation rate prediction apparatus according to one aspect of the present invention, the calculation unit uses the target sputtering rate S, the power intensity P applied between the target and the substrate, and the target atom diameter At. Calculate the deposition rate. For this reason, for example, as described above, compared with the conventional film thickness prediction method of calculating the film thickness using the sputtered particle generation frequency coefficient and the sputtered particle arrival rate, the behavior of electrons and target atoms is different. By considering the influencing factors, the film thickness of the target atoms deposited on the substrate per unit time can be accurately estimated. As a result, the accuracy of the predicted value of the film thickness can be improved as compared with the conventional method.

It is a cross-sectional view showing a configuration example of a magnetron sputtering apparatus. (a) to (f) are explanatory diagrams for explaining the concept of magnetron sputtering. It is a block diagram which shows the structural example of the prediction apparatus of a film-forming rate. It is an explanatory view for explaining a cosine law. FIG. 4 is a correlation diagram between (a) an actual measurement value and a predicted value in an example in a verification test, and (b) a correlation diagram between an actual measurement value and a predicted value in a comparative example.

A film forming rate prediction apparatus according to an embodiment of the present invention will be described in detail below with reference to the drawings.

<Embodiment>
<Configuration>
A film formation rate prediction apparatus according to the present embodiment predicts the film thickness per unit time of a thin film formed on a substrate, that is, the film formation rate, in a magnetron sputtering apparatus that performs sputtering by magnetron sputtering. First, the magnetron sputtering apparatus 100 that constitutes a film forming rate prediction apparatus will be described.

FIG. 1 is a cross-sectional view showing the configuration of a magnetron sputtering apparatus 100. As shown in FIG. The film formation rate prediction apparatus 500 according to the present embodiment predicts the film formation rate of a thin film formed on the substrate 132 provided in the magnetron sputtering apparatus 100 shown in FIG.

As shown in FIG. 1, the magnetron sputtering apparatus 100 includes a magnet unit 110, a target mounting portion 120, a target 131, a substrate 132, a stage 140, a chamber 150, an anti-adhesion plate 160a, and an anti-adhesion plate 160b. Prepare.

As shown in FIG. 1 , the target 131 , the substrate 132 , the stage 140 , and the attachment prevention plates 160 a and 160 b are provided inside the chamber 150 . Although not shown, the chamber 150 is configured to be openable and closable. With the chamber 150 open, the target mounting portion 120 to which the target 131 is fixed can be attached, and the substrate 132 can be placed on the stage 140. can be done.

The magnet unit 110 is a disk that rotates around the shaft 111 and includes magnetic bodies 112a and 112d with N poles facing the target 131 and magnetic bodies 112b and 112c with S poles facing each other. unit.
In addition, hereinafter, when magnetic bodies are collectively referred to as magnetic bodies in the present embodiment, they are described as magnetic bodies 112 . The quantity of the magnetic bodies 112 can be arbitrarily changed without being limited to the quantity described in the drawing. Also, as the magnetic body 112, a magnet is used here, but anything other than a magnet (for example, a coil) may be used as long as it generates a magnetic field.

The target attachment portion 120 is a member for attaching the target 131 and is made of a conductive material.
The target 131 is a material that forms a thin film on the substrate 132 . For the target 131, for example, various metals such as aluminum, titanium, nickel, and gold that are desired to be deposited on the substrate 132 can be used. The target 131 is attached to the target attachment portion 120 before film formation. The target 131 can be removed from the target mounting portion 120 after film formation.

The substrate 132 is an object on which a thin film containing the target 131 is formed. In this embodiment, the substrate 132 is disc-shaped. The substrate 132 is placed on the stage 140 before film formation and removed from the stage 140 after film formation. It should be noted that the substrate 132 is not limited to a disc shape, and may be rectangular, for example.
The stage 140 is a device for placing the substrate 132 thereon.

The chamber 150 has an injection hole for injecting inert gas and is connected to an inert gas injector 180 . Here, the inert gas injector 180 is a device for injecting inert gas into the chamber 150 and is detachably connected to the chamber 150 . Argon, for example, is used as the inert gas.

In addition, the chamber 150 has an exhaust hole for exhausting internal air, and is connected to a vacuum device 190 for absorbing internal air and creating a vacuum state. Here, the vacuum device 190 can vacuum the inside of the chamber 150 by sucking the air out of the chamber 150 .
The inert gas is injected after the chamber 150 is evacuated by the vacuum device 190 .

The anti-adhesion plates 160 a and 160 b are cylindrical conductive plates provided to prevent target atoms scattered from the target from adhering inside the chamber 150 .

A power source 130 is connected to the target mounting portion 120 and the stage 140 . A negative electrode side of the power source 130 is connected to the target mounting portion 120 , and a positive electrode side of the power source 130 is connected to the stage 140 . Therefore, a voltage is applied between the target mounting portion 120 and the target 131 as a negative electrode, and between the stage 140 and the substrate 132 as a positive electrode.

In FIG. 1, a dotted line 171 indicates a location acting as a negative electrode, and a dotted line 170 indicates a location acting as a positive electrode. Power supply 130 applies a voltage between target mount 120 and stage 140 . Here, each of the target mounting portion 120 and the stage 140 may act as an electrode, or an electrode may be provided on each surface to apply a voltage.

In the magnetron sputtering apparatus 100 , argon gas is injected into the chamber 150 from the inert gas injector 180 after the vacuum device 190 evacuates the chamber 150 . When the chamber 150 is filled with argon gas, a voltage is applied between the target 131 and the substrate 132 from the power supply 130, and the magnet unit 110 is driven around the shaft 111 by a motor (not shown). Rotate.

Here, the principle of magnetron sputtering in the magnetron sputtering apparatus 100 will be briefly described. 2A to 2F are conceptual diagrams for explaining the concept of magnetron sputtering in the magnetron sputtering apparatus 100. FIG. Here, as an example, it is assumed that the inert gas enclosed in the chamber 150 is argon gas and the target 131 is nickel.

As shown in FIG. 2A, when a voltage is applied to the magnetron sputtering apparatus 100 from the power supply 130, an electric field is generated between the target 131 and the substrate 132 as indicated by an arrow 401. As shown in FIG. Arrows 401 indicate the direction in which electrons move. A magnetic field is generated by the magnetic body 112 as indicated by an arrow 402 in FIG. 2(a).

Electrons 411 in the electric field generated between the target 131 and the substrate 132 are captured by the magnetic field generated by the magnetic material 112, as shown in FIG. 2(b). As described above, the chamber 150 is filled with argon gas, and the trapped electrons 411 collide with argon molecules 431 based on the argon gas filled in the chamber 150, as shown in FIG. do. Argon molecules 431 are separated into argon ions 432 and electrons 433 by this collision.

The separated argon ions 432 have a positive polarity and are attracted to the negative electrode side, that is, the target 131 side, as shown in FIG. 2(d). As a result, argon ions 432 collide with target 131 .
As shown in FIG. 2E, the argon ions 432 that have collided with the target 131 are buried in the target 131 or receive electrons to become argon molecules. On the other hand, the bombardment of argon ions 432 against the target 131 releases target atoms, namely nickel atoms 435 . The ejected nickel atoms 435 are deposited on the substrate 132 as shown in FIG. 2(f). In this manner, the components of the target 131 are deposited on the substrate 132 .

The film formation rate prediction apparatus 500 according to the present embodiment predicts the film thickness rate of the thin film formed on the substrate 132 in the magnetron sputtering apparatus 100 as shown in FIG. The film formation rate prediction device 500 will be described in detail below.

FIG. 3 is a block diagram showing an example of the functional configuration of the film formation rate prediction device 500. As shown in FIG. As shown in FIG. 3 , the deposition rate prediction device 500 includes a communication section 501 , a storage section 502 and a control section 503 .
The communication unit 501 has a function of executing communication with an external device. The communication unit 501 functions as a reception unit that obtains the sputtering amount of the target 131 from the magnetron sputtering apparatus 100 . The communication unit 501 receives the area of the target 131 and the intensity of power applied between the target 131 and the substrate 132 .
The communication unit 501 also functions as an output unit that outputs the film formation rate calculated by the calculation unit 504 .

As long as the communication unit 501 can execute communication with an external device, the form of communication does not matter whether it is wired or wireless. Also, as a communication protocol used for communication, any communication standard can be used as long as it can communicate with an external device.
External devices include, for example, a monitor for displaying wear degree information and film thickness information, a printer for printing out such information, a mouse and keyboard for inputting information to the film formation rate prediction device 500, and the like. input device, and a recording medium for holding arrangement information and magnetic force intensity information.

When the communication unit 501 receives the sputter amount of the target 131 , the area of the target 131 , and the intensity of electric power applied between the target 131 and the substrate 132 , the communication unit 501 transmits the information to the control unit 503 . Further, the communication unit 501 transmits the transmitted film formation rate to an external device according to an instruction from the control unit 503 .

The storage unit 502 is a storage medium having a function of storing various programs and data required for operation of the film formation rate prediction apparatus 500 . The storage unit 502 can be realized by various recording media such as an HDD (Hard Disc Drive), an SSD (Solid State Drive), and a flash memory.
The storage unit 502 stores numerical values used for calculating the deposition rate, including a correction coefficient α, the sputtering rate of the target 131, information on the distance between the target 131 and the substrate 132, and the diameter (mm) of the target atoms. , is remembered.

The control unit 503 is a processor having a function of controlling each unit of the film formation rate prediction device 500 . The controller 503 includes a calculator 504 that calculates the film thickness rate of the thin film formed on the substrate 132 .

When the communication unit 501 transmits the sputtering amount of the target 131 , the area of the target 131 , and the intensity of the electric power applied between the target 131 and the substrate 132 , the control unit 503 stores them in the storage unit 502 .
Then, the calculation unit 504 according to this embodiment calculates the film formation rate based on the following formula (1). The calculation unit 504 calculates the film formation rate using the film formation rate calculation program stored in the storage unit 502 .

ここで、Ｒは成膜レート（ｎｍ／ｍｉｎ）、αは補正係数を示す。
補正係数αは、大きさの異なる複数の基板１３２における成膜レートの予測結果を、一律に評価するための係数であり、経験的に求められる値である。本実施形態では、基板１３２が、２インチに相当する大きさの場合には、α１＝６８３２．６７とし、基板１３２が、８インチに相当する大きさの場合には、α２＝２５３．５６とした。

Here, R is a film forming rate (nm/min), and α is a correction coefficient.
The correction coefficient α is a coefficient for uniformly evaluating the prediction results of the film formation rates on a plurality of substrates 132 having different sizes, and is a value obtained empirically. In this embodiment, when the substrate 132 has a size equivalent to 2 inches, α1=6832.67, and when the substrate 132 has a size equivalent to 8 inches, α2=253.56. did.

T indicates the sputtering amount (−) of the target 131 .
The sputter amount T of the target 131 is a dimensionless amount indicating the degree of emission of the target atoms actually emitted from the target 131, that is, the nickel atoms 435 in the above description.
The sputter amount T is transmitted from the magnetron sputtering apparatus 100 to the calculator 504 via the communication unit 501 .

S indicates the sputtering rate of the target 131 (atoms/ions or molecules/ions).
The sputtering rate is a constant determined by the type of element, and indicates the ratio of the number of target atoms 435 emitted from the target 131 by the collision of the argon ions 432, that is, the number of nickel atoms 435 to the argon ions in the above description. .

A representative value of the sputtering rate is illustrated.
When the collision energy of the argon ions 432 is 500 eV, the sputtering rate for each element is iron: 0.84, copper: 2.55, lead: 2.08, silver: 3.12, tin: 1.40, gold: 2.40.

[cos] indicates the cosine rule.
That is, the calculator 504 predicts the film thickness of the thin film on the target 131 using the so-called cosine law. The calculator 504 predicts the film thickness of the thin film formed on the substrate 132 by applying the degree of wear of the target 131 predicted by the cosine law. Film thickness prediction using the cosine law is widely known, and the film thickness is predicted according to the evaporation distribution of the target 131 .

Calculation unit 504 uses the following formula (2) as the cosine rule.

ここで、ターゲット１３１の蒸発分布がSpherical（球状）である場合は、算出部５０４は数式（２）においてｎ＝３とする。
また、算出部５０４は、ターゲット１３１の蒸発分布がｃｏｓ^０．５θ分布に従う場合は、数式（２）においてｎ＝３．５とする。本書面において、θは、蒸発源にたてた法線から基板１３２における膜厚予測点（図４の付着点６０２参照）までの開き角を示す（図４のθ参照）。

Here, when the evaporation distribution of the target 131 is spherical, the calculation unit 504 sets n=3 in Equation (2).
Further, when the evaporation distribution of the target 131 follows the cos ^0.5 θ distribution, the calculation unit 504 sets n=3.5 in Equation (2). In this document, θ indicates the divergence angle from the normal to the evaporation source to the film thickness prediction point on the substrate 132 (see attachment point 602 in FIG. 4) (see θ in FIG. 4).

Further, when the evaporation distribution of the target 131 follows the cos θ distribution, the calculation unit 504 sets n=4 in Equation (2), and when the evaporation distribution of the target 131 follows the cos ² θ distribution, n= 5. Furthermore, when the evaporation distribution of the target 131 follows the cos ³ θ distribution, the calculation unit 504 sets n=6 in Equation (2).

Here, h indicates the distance between the target 131 and the substrate 132, that is, the length (height) from directly above the evaporation source to the substrate 132. FIG. 1 indicates the horizontal distance from the point (evaporation source) sputtered from the target 131 to the point adhered to the substrate 132 . FIG. 4 shows a relationship diagram for making the relationship between h and l easier to understand, so please refer to that as well.

As shown in FIG. 4, when the inert gas ions collide with the target 131 at the collision point (evaporation source) 600, the atoms of the target 131 scatter in the direction indicated by the arrow 601 and adhere to the attachment point 602. . At this time, the length of the perpendicular drawn from the collision point 600 to the substrate 132 is h, and the distance from the intersection of the perpendicular and the substrate 132 to the attachment point 602 is l.

t indicates the surface area (mm ² ) of the target 131 .
Here, ∫T×S×[cos θ]dt represents integration of the product of the above-described sputtering amount T, sputtering rate S, and cosine law [cos θ] over the entire surface of the target 131 .

Also, P indicates the intensity (W) of power applied between the target 131 and the substrate 132 .
As the intensity of the electric power applied between the target 131 and the substrate 132 increases, the electrons 411 located between the target 131 and the substrate 132 collide with the argon molecules 431 violently. This promotes the separation of argon ions 432 from argon molecules 431 and increases the collisions of argon ions 432 with the target 131 , thereby increasing the amount of target atoms deposited on the substrate 132 .

Also, At indicates the diameter (mm) of the target atom. The size of the target atom is stored in advance in the storage unit 502 as a known value. The larger the size of the target atoms, the thicker the thin film deposited on the substrate 132 .

<Summary>
As described above, the film formation rate prediction apparatus 500 according to the present embodiment uses the sputtering rate S of the target 131, the power intensity P applied between the target 131 and the substrate 132, and the target atoms The calculation unit 504 calculates the film formation rate using the diameter At.
For this reason, for example, as described above, compared with the conventional film thickness prediction method of calculating the film thickness using the sputtered particle generation frequency coefficient and the sputtered particle arrival rate, the behavior of electrons and target atoms is different. By considering the influencing factors, the film thickness of the target atoms deposited on the substrate per unit time can be accurately estimated. As a result, the accuracy of the predicted value of the film thickness can be improved as compared with the conventional method.

In addition, since the calculation unit 504 uses the sputtering amount T of the target 131 obtained from the magnetron sputtering apparatus 100 when calculating the deposition rate, the sputtering amount T actually measured by the magnetron sputtering apparatus 100 is used to form the film. rate can be calculated. For this reason, the deposition rate can be calculated more accurately than, for example, a method in which the estimated sputter amount is stored in advance and the value is used for calculation.

<Verification test>
Next, a verification test for confirming the effects of the present invention will be described.
In this verification test, a film formation rate prediction device according to an embodiment of the present invention was employed as an example. In addition, as a comparative example, the deposition rate was calculated by using a formula excluding the target sputtering rate S, the power intensity P applied between the target and the substrate, and the target atom diameter At from formula (1). A deposition rate prediction device was adopted.
In each prediction device, a certain number of samples were evaluated by changing the area of the target 131 and the type of target atoms. Then, the predicted value of the calculated film formation rate was compared with the actual film formation rate (measured value). The results are shown in FIG.

Here, in FIGS. 5(a) and 5(b), symbols ●, ▴, and ◇ are distinguished according to the difference in the target atoms and the difference in the area of the substrate 132 .

As shown in FIG. 5( a ), it was confirmed that the predicted value of the film formation rate calculated according to the example was generally within ±20% of the measured value. An index indicating the degree of correlation between the predicted value and the measured value (hereinafter referred to as correlation value) is 0.93. Here, this correlation value means that the larger the value, the stronger the correlation between the two.

On the other hand, as shown in FIG. 5(b), it was confirmed that the film formation rate calculated by the comparative example did not fall within ±20% of the predicted value with respect to the measured value. Also, the correlation value between the predicted value and the measured value is -2.46. That is, it was confirmed that the film formation rate calculated according to the example is closer to the measured value than the film formation rate calculated according to the comparative example.

Next, the difference in each sample is illustrated.
In the sample 701a in the comparative example shown in FIG. 5(b), the predicted value is much smaller than -20% of the measured value. On the other hand, in the sample 701b in the example shown in FIG. 5A, the predicted value is within +20% of the measured value.

In addition, in the sample 702a in the comparative example shown in FIG. 5B, the predicted value is smaller than -20% of the measured value. On the other hand, in the sample 702b in the example shown in FIG. 5A, the predicted value is close to the measured value.
As described above, it was confirmed that the accuracy of the film thickness prediction value can be improved by the film formation rate prediction method of the present invention.

<Supplement>
The method for realizing the film formation rate prediction apparatus 500 according to the present embodiment is not limited to the mode shown in the above embodiment. Various modifications will be described below.

(1) In the above-described embodiment, the magnetron sputtering apparatus 100 has a configuration in which the magnet unit 110 is rotated, but the magnet unit 110 does not necessarily have to be rotated and does not have to be configured in a disc shape. The magnet unit 110 may have any other shape, for example, a rectangular configuration, as long as a magnetic field is formed, electrons can migrate, and collide with inert gas components to generate ion molecules. may be configured so as not to rotate. The deposition rate prediction device 500 can calculate the thin film rate of the thin film deposited on the substrate 132 regardless of the shape of the magnet unit.

(2) In addition, in the above-described embodiment, the calculation unit 504 executes the film formation rate calculation program to realize the above, but the present invention is not limited to such a mode.
For example, it may be realized by a logic circuit (hardware) or a dedicated circuit formed in an integrated circuit (IC (Integrated Circuit) chip, LSI (Large Scale Integration)) or the like. Moreover, these circuits may be realized by one or more integrated circuits, and the functions of the plurality of functional units shown in the above embodiments may be realized by one integrated circuit. LSIs are sometimes called VLSIs, super LSIs, ultra LSIs, etc., depending on the degree of integration.

In addition, the film formation rate calculation program may be recorded on a processor-readable recording medium, and the recording medium may be a "non-temporary tangible medium" such as a tape, disk, card, semiconductor memory, programmable A logic circuit or the like can be used. Further, the film formation rate calculation program may be supplied to the processor via any transmission medium (communication network, broadcast wave, etc.) capable of transmitting the program. The invention can also be implemented in the form of a data signal embedded in a carrier wave, in which the wear prediction program is embodied by electronic transmission.

(3) The configurations shown in the above embodiment and each supplement may be combined as appropriate.

100 magnetron sputtering device 131 target 132 substrate 190 vacuum device 500 deposition rate prediction device 503 control unit 504 calculation unit

Claims (4)

A plate-shaped target, which is a material for forming a film on a substrate,
the substrate arranged to face the target;
a magnet unit arranged on the back surface of the target, in which a plurality of magnetic bodies each having a positive electrode facing the target and a magnetic body having a negative electrode facing the target are arranged;
An apparatus for predicting a deposition rate of the target in a magnetron sputtering apparatus for applying a voltage between the target and the substrate to deposit a component of the target on the substrate,
A film formation rate prediction apparatus comprising a calculation unit for calculating a film formation rate based on the following formula (1).
R=α×∫T×S×[cos θ]dt×P/At (1)
R: film formation rate (nm/min), α: correction coefficient (coefficient for uniform evaluation of film formation rate prediction results for a plurality of substrates with different sizes) , t: target area (mm ² ), T: target sputtering amount (−), S: target sputtering rate ( the ratio of the number of target atoms emitted from the target due to collision of inert gas ions, target atoms/ inert gas ions or target molecules/ inert active gas ion), [cos]: cosine law, P: intensity of electric power applied between target and substrate (W), At: diameter of target atom (mm) 2. The film formation according to claim 1, wherein the calculation unit uses the sputtering amount T of the target obtained from the magnetron sputtering apparatus when calculating the film formation rate based on Equation (1). Rate predictor. A plate-shaped target, which is a material for forming a film on a substrate,
the substrate arranged to face the target;
a magnet unit arranged on the back surface of the target, in which a plurality of magnetic bodies each having a positive electrode facing the target and a magnetic body having a negative electrode facing the target are arranged;
A method for predicting a deposition rate of a target in a magnetron sputtering apparatus for applying a voltage between the target and the substrate to deposit a component of the target on the substrate, comprising:
A film formation rate prediction method for calculating the film formation rate based on the following formula (1).
R=α×∫T×S×[cos θ]dt×P/At (1)
R: film formation rate (nm/min), α: correction coefficient (coefficient for uniform evaluation of film formation rate prediction results for a plurality of substrates with different sizes) , t: target area (mm ² ), T: target sputtering amount (−), S: target sputtering rate ( the ratio of the number of target atoms emitted from the target due to collision of inert gas ions, target atoms/ inert gas ions or target molecules/ inert active gas ion), [cos]: cosine law, P: intensity of electric power applied between target and substrate (W), At: diameter of target atom (mm) A plate-shaped target, which is a material for forming a film on a substrate,
the substrate arranged to face the target;
a magnet unit arranged on the back surface of the target, in which a plurality of magnetic bodies each having a positive electrode facing the target and a magnetic body having a negative electrode facing the target are arranged;
A method program for predicting a deposition rate of a target in a magnetron sputtering apparatus for applying a voltage between the target and the substrate to deposit a component of the target on the substrate,
A film formation rate prediction program that causes a computer to realize a calculation function for calculating a film formation rate based on the following formula (1).
R=α×∫T×S×[cos θ]dt×P/At (1)
R: film formation rate (nm/min), α: correction coefficient (coefficient for uniform evaluation of film formation rate prediction results for a plurality of substrates with different sizes) , t: target area (mm ² ), T: target sputtering amount (−), S: target sputtering rate ( the ratio of the number of target atoms emitted from the target due to collision of inert gas ions, target atoms/ inert gas ions or target molecules/ inert active gas ion), [cos]: cosine law, P: intensity of electric power applied between target and substrate (W), At: diameter of target atom (mm)

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